JP2020120474A - 熱電変換装置 - Google Patents
熱電変換装置 Download PDFInfo
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- JP2020120474A JP2020120474A JP2019008750A JP2019008750A JP2020120474A JP 2020120474 A JP2020120474 A JP 2020120474A JP 2019008750 A JP2019008750 A JP 2019008750A JP 2019008750 A JP2019008750 A JP 2019008750A JP 2020120474 A JP2020120474 A JP 2020120474A
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- conversion device
- thermoelectric conversion
- temperature difference
- electrolyte solution
- electrolytic cell
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 46
- 239000008151 electrolyte solution Substances 0.000 claims abstract description 31
- 239000002105 nanoparticle Substances 0.000 claims abstract description 11
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 16
- 150000002500 ions Chemical class 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 239000012528 membrane Substances 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 10
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000001103 potassium chloride Substances 0.000 claims description 5
- 235000011164 potassium chloride Nutrition 0.000 claims description 5
- 239000005300 metallic glass Substances 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 239000011780 sodium chloride Substances 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 2
- 239000000243 solution Substances 0.000 abstract description 2
- 229940021013 electrolyte solution Drugs 0.000 description 20
- 239000002090 nanochannel Substances 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 238000005868 electrolysis reaction Methods 0.000 description 11
- 239000003792 electrolyte Substances 0.000 description 11
- 238000002474 experimental method Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000011148 porous material Substances 0.000 description 7
- 229910001414 potassium ion Inorganic materials 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 238000004891 communication Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 238000002485 combustion reaction Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 239000002803 fossil fuel Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000013535 sea water Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000037427 ion transport Effects 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000000708 deep reactive-ion etching Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M6/00—Primary cells; Manufacture thereof
- H01M6/30—Deferred-action cells
- H01M6/36—Deferred-action cells containing electrolyte and made operational by physical means, e.g. thermal cells
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N11/00—Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Primary Cells (AREA)
- Hybrid Cells (AREA)
Abstract
Description
図2乃至図9は、本発明の実施の形態の熱電変換装置を示している。
図2に示すように、熱電変換装置10は、膜体11と支持体12と1対の電解槽13a、13bと1対の電極14a、14bと温度調整手段15とを有している。
このことを調べるために、以下の実験を行った。
11 膜体
11a 貫通孔
12 支持体
12a シリコン基板
12b SiO2膜
12c 連通孔
13a、13b 電解槽
14a、14b 電極
15 温度調整手段
21 負荷抵抗
22 データロガー
Claims (7)
- 厚みを貫通して設けられたナノサイズの複数の貫通孔を有する膜体と、
内部に電解質溶液を収納しており、前記膜体を挟んで、前記複数の貫通孔で互いに連通するよう設けられた1対の電解槽と、
各電解槽に設けられた1対の電極と、
各電解槽に収納された前記電解質溶液に温度差を発生させるよう、少なくとも一方の電解槽を加熱または冷却可能に設けられた温度調整手段とを有し、
各電解槽に収納された前記電解質溶液に、前記温度調整手段で温度差を発生させたとき、各電極間に起電力が発生するよう構成されていることを
特徴とする熱電変換装置。 - 前記膜体および前記電解質溶液は、前記複数の貫通孔の孔壁に沿って、電気二重層を形成可能に構成されていることを特徴とする請求項1記載の熱電変換装置。
- 各電解槽に収納された前記電解質溶液に温度差がないとき、前記電気二重層により、前記電解質溶液中のイオンが前記複数の貫通孔を通過できないよう構成されていることを特徴とする請求項2記載の熱電変換装置。
- 各電解槽に収納された前記電解質溶液に、前記温度調整手段で温度差を発生させた後、その温度差をなくすことにより、少なくともいずれか一方の電解槽に、+イオンまたは−イオンを蓄えて、蓄電可能に構成されていることを特徴とする請求項1乃至3のいずれか1項に記載の熱電変換装置。
- 前記膜体は、ケイ素、酸化物、窒化物、金属または金属ガラスから成ることを特徴とする請求項1乃至4のいずれか1項に記載の熱電変換装置。
- 前記電解質溶液は、塩化カリウムまたは塩化ナトリウムを含むことを特徴とする請求項1乃至5のいずれか1項に記載の熱電変換装置。
- 前記複数の貫通孔は、直径が1nm乃至100nmであることを特徴とする請求項1乃至6のいずれか1項に記載の熱電変換装置。
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JP2019008750A JP7313616B2 (ja) | 2019-01-22 | 2019-01-22 | 熱電変換装置 |
PCT/JP2020/001961 WO2020153359A1 (ja) | 2019-01-22 | 2020-01-21 | 熱電変換装置 |
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JP2019008750A JP7313616B2 (ja) | 2019-01-22 | 2019-01-22 | 熱電変換装置 |
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JP2020120474A true JP2020120474A (ja) | 2020-08-06 |
JP7313616B2 JP7313616B2 (ja) | 2023-07-25 |
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WO (1) | WO2020153359A1 (ja) |
Cited By (1)
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---|---|---|---|---|
WO2022044835A1 (ja) * | 2020-08-26 | 2022-03-03 | 東京エレクトロン株式会社 | 熱量効果素子、伝熱装置、半導体製造装置及び熱量効果素子の制御方法 |
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CN113838674B (zh) * | 2021-10-08 | 2022-12-06 | 洛阳理工学院 | 一种全固态柔性热电转换装置的制备方法 |
Family Cites Families (2)
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US7227235B2 (en) * | 2003-11-18 | 2007-06-05 | Lucent Technologies Inc. | Electrowetting battery having a nanostructured electrode surface |
US20060141346A1 (en) * | 2004-11-23 | 2006-06-29 | Gordon John H | Solid electrolyte thermoelectrochemical system |
-
2019
- 2019-01-22 JP JP2019008750A patent/JP7313616B2/ja active Active
-
2020
- 2020-01-21 WO PCT/JP2020/001961 patent/WO2020153359A1/ja active Application Filing
Non-Patent Citations (2)
Title |
---|
TOAN. N.V. , INOMOTO.N , TODA.M, ONO.T: "Ion transport by gating voltage to nanopores produced via metal-assisted chemical etching method", NANOTECHNOLOGY, vol. 29, no. 195301, JPN6023010594, 16 March 2018 (2018-03-16), JP, pages 1 - 7, ISSN: 0005021262 * |
VAN DER HYDEN. FRANK H. J. , BONTHUIS. DOUWE JAN, STEIN DEREK ,MEYER CHRISTINE AND DEKKER CEES,: "Power Generation by pressure-Driven Transport of Ions in Nanofluidic Channel", NANO LETTERS, JPN6023010595, 24 January 2007 (2007-01-24), pages 1025 - 1, ISSN: 0005021263 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022044835A1 (ja) * | 2020-08-26 | 2022-03-03 | 東京エレクトロン株式会社 | 熱量効果素子、伝熱装置、半導体製造装置及び熱量効果素子の制御方法 |
JP7503968B2 (ja) | 2020-08-26 | 2024-06-21 | 東京エレクトロン株式会社 | 熱量効果素子、伝熱装置、半導体製造装置及び熱量効果素子の制御方法 |
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JP7313616B2 (ja) | 2023-07-25 |
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