JP2020120071A - Solid state image pickup device and electronic equipment - Google Patents

Abstract

To provide a solid state image pickup device capable of achieving a further improvement of an image quality by further suppressing an adverse effect by hot carrier light emission.SOLUTION: A solid state image pickup device comprises: an element formation part in which a plurality of elements are formed; and a wiring part that is laminated on the element formation part and in which a wiring for establishing connection between the elements is formed. In the element formation part, a light receiving element for performing photoelectric conversion, an active element constituting a peripheral circuit arranged on the periphery of the light receiving element, and at least two structure groups composed of at least two structures between the light receiving element and the active element are arranged, one of the at least two structure groups and the other thereof are formed to be different in at least one of structure constituting material, structure width, structure thickness, and distance between two adjacent structures, and entrance of hot carrier light emission occurring at the active element into the light receiving element is prevented.SELECTED DRAWING: Figure 3

Description

The present technology relates to a solid-state imaging device and electronic equipment.

In recent years, electronic cameras have become more and more popular, and the demand for solid-state imaging devices (image sensors), which is a central component of the electronic cameras, is ever increasing. Further, in terms of performance of the solid-state image pickup device, technological development for achieving higher image quality and higher functionality is being continued. On the other hand, with the spread of video cameras and portable cameras, as well as mobile phones, PDAs (Personal Digital Assistants), and notebook personal computers, solid-state imaging devices and their components have been reduced in size to facilitate portability. It is becoming indispensable to reduce the cost to reduce the weight, reduce the weight, and reduce the thickness. In this case, since it is preferable to form the photoelectric conversion element and the peripheral circuit as close as possible, various measures have been taken. For example, since the photoelectric conversion element handles minute carriers (electrons) as a signal, the influence of heat from a peripheral circuit or an electromagnetic field may be easily mixed as noise. In addition, a slight amount of hot carrier light emitted from a transistor or a diode may have a great influence on the image sensor characteristics.

For example, Patent Document 1 proposes a technique for suppressing the adverse effect of hot carrier light emission. Further, Patent Document 2 proposes a technique for suppressing the entry of light emitted from an active element such as a transistor or a diode into the photoelectric conversion unit during operation to improve the image quality.

International Publication No. 2015/068589 JP, 2005-128187, A

However, in the techniques proposed in Patent Documents 1 and 2, there is a possibility that the adverse effect due to hot carrier light emission is further suppressed and the image quality cannot be further improved.

Therefore, the present technology has been made in view of such circumstances, and a solid-state imaging device capable of further suppressing the adverse effect of hot carrier light emission and further improving the image quality, and the solid-state imaging device thereof. The main purpose is to provide an electronic device equipped with.

As a result of earnest research for solving the above-mentioned object, the present inventors succeeded in realizing further suppression of the adverse effect due to hot carrier emission, and completed the present technology.

That is, in the present technology, as the first aspect,
An element forming portion in which a plurality of elements are formed,
A wiring portion that is laminated on the element forming portion and in which wiring for connecting the elements is formed,
In the element formation part,
A light receiving element that performs photoelectric conversion,
An active element forming a peripheral circuit arranged around the light receiving element;
At least two structure groups composed of at least two structures are arranged between the light receiving element and the active element,
The at least two structure groups, one of the at least two structure groups and the other at least one structure group are made of a material constituting the structure, a width of the structure, At least one of the thickness of the structure and the distance between two adjacent structures is formed differently to prevent hot carrier emission generated in the active element from entering the light receiving element. Provided is a solid-state imaging device.

In the solid-state imaging device according to the first aspect of the present technology,
The wavelength selectivity of the one structure group and the wavelength selectivity of the at least one other structure group may be different from each other.

In the solid-state imaging device according to the first aspect of the present technology,
A distance between at least one adjacent two structures of the one structure group and a distance between at least one adjacent two structures of the other at least one structure group are different. You can

In the solid-state imaging device according to the first aspect of the present technology,
The width of at least one structure of at least two structures forming the one structure group, and at least one structure of at least two structures forming the other at least one structure group The width may be different.

In the solid-state imaging device according to the first aspect of the present technology,
The one structure group may be a laminated body in which a first structure and a second structure laminated on the first structure are configured as repeating units,
The other at least one structure group may be a laminated body in which a third structure and a fourth structure laminated on the third structure are constituted as repeating units,
The material of which the one structure group and the at least one other structure group of the other constitute each of the one structure and the fourth structure, and the thickness of each of the one structure and the fourth structure. At least one of them may be formed differently.

As the solid-state imaging device according to the second aspect of the present technology,
An element forming portion in which a plurality of elements are formed,
A wiring portion that is laminated on the element forming portion and in which wiring for connecting the elements is formed,
In the element formation part,
A light receiving element that performs photoelectric conversion,
An active element forming a peripheral circuit arranged around the light receiving element;
A structure group composed of a plurality of structures is arranged between the light receiving element and the active element,
In the structure group, at least one of a material, a width and a thickness of each of the plurality of structures and a distance between two adjacent structures in the plurality of structures is changed to have a predetermined pattern. Then, the plurality of structures are arranged,
Provided is a solid-state imaging device in which the structure group prevents hot carrier light emission generated in the active element from entering the light receiving element.

In the solid-state imaging device according to the second aspect of the present technology,
The pattern may be at least one of a random pattern, an alternating pattern, a periodic pattern, a block pattern, and a gradual pattern.
In the solid-state imaging device according to the second aspect of the present technology,
The plurality of structures may be arranged such that the distance between two adjacent structures in the plurality of structures changes so as to have a gradual pattern.

As the solid-state imaging device according to the third aspect of the present technology,
A pixel region formed on the light incident side of the substrate, in which a plurality of pixels including a photoelectric conversion unit are arranged;
A peripheral circuit portion formed around the pixel region and including an active element;
At least two structures, which are arranged between the pixel region and the peripheral circuit part, and which prevent at least two structures from preventing hot carrier emission generated in the active element from entering the photoelectric conversion part. And a group of objects,
The at least two structure groups, one of the at least two structure groups and the other at least one structure group are made of a material constituting the structure, a width of the structure, Formed differently in at least one of the thickness of the structure and the distance between two adjacent structures,
The substrate includes a first semiconductor chip portion including a first multilayer wiring layer and the pixel region;
A second multilayer wiring layer and a second semiconductor chip portion including the peripheral circuit portion are bonded together,
The first semiconductor chip portion and the second semiconductor chip portion are electrically connected by a connection conductor that penetrates the first semiconductor chip portion,
Provided is a solid-state imaging device in which the first semiconductor chip section and the second semiconductor chip section are bonded to each other with the first multilayer wiring layer and the second multilayer wiring layer facing each other.

In the solid-state imaging device according to the third aspect of the present technology,
The wavelength selectivity of the one structure group and the wavelength selectivity of the at least one other structure group may be different from each other.
In the solid-state imaging device according to the third aspect of the present technology,
A distance between at least one adjacent two structures of the one structure group and a distance between at least one adjacent two structures of the other at least one structure group are different. You can

In the solid-state imaging device according to the third aspect of the present technology,
The width of at least one structure of at least two structures forming the one structure group, and at least one structure of at least two structures forming the other at least one structure group The width may be different.

In the solid-state imaging device according to the third aspect of the present technology,
The one structure group may be a laminated body in which a first structure and a second structure laminated on the first structure are configured as repeating units,
The other at least one structure group may be a laminated body in which a third structure and a fourth structure laminated on the third structure are constituted as repeating units,
The material of which the one structure group and the at least one other structure group of the other constitute each of the one structure and the fourth structure, and the thickness of each of the one structure and the fourth structure. At least one of them may be formed differently.

As the solid-state imaging device according to the fourth aspect of the present technology,
A pixel region formed on the light incident side of the substrate, in which a plurality of pixels including a photoelectric conversion unit are arranged;
A peripheral circuit portion formed around the pixel region and including an active element;
A structure group composed of a plurality of structures, which is disposed between the pixel region and the peripheral circuit section and prevents hot carrier emission generated in the active element from entering the photoelectric conversion section, Have
In the structure group, at least one of a material, a width and a thickness of each of the plurality of structures and a distance between two adjacent structures in the plurality of structures is changed to have a predetermined pattern. Then, the plurality of structures are arranged,
The substrate includes a first semiconductor chip portion including a first multilayer wiring layer and the pixel region;
A second multilayer wiring layer and a second semiconductor chip portion including the peripheral circuit portion are bonded together,
The first semiconductor chip portion and the second semiconductor chip portion are electrically connected by a connection conductor that penetrates the first semiconductor chip portion,
Provided is a solid-state imaging device in which the first semiconductor chip section and the second semiconductor chip section are bonded to each other with the first multilayer wiring layer and the second multilayer wiring layer facing each other.

In the solid-state imaging device according to the fourth aspect of the present technology,
The pattern may be at least one of a random pattern, an alternating pattern, a periodic pattern, a block pattern, and a gradual pattern.

In the solid-state imaging device according to the fourth aspect of the present technology,
The plurality of structures may be arranged such that the distance between two adjacent structures in the plurality of structures changes so as to have a gradual pattern.

As the solid-state imaging device according to the fifth aspect of the present technology,
An element forming portion in which a plurality of elements are formed,
A wiring portion that is laminated on the element forming portion and in which wiring for connecting the elements is formed,
In the element formation part,
A light receiving element that performs photoelectric conversion,
An active element that constitutes a peripheral circuit arranged around the light receiving element, and
A structure group formation region is formed between the light receiving element and the active element,
The structure group formation region includes at least a first structure group having a plurality of first structures and a second structure group having a plurality of second structures,
There is provided a solid-state imaging device in which a distance between at least one adjacent first structures and a distance between at least one adjacent second structures are different.

In the solid-state imaging device according to the fifth aspect of the present technology,
The wavelength selectivity of the first structure group and the wavelength selectivity of the second structure group may be different from each other.

In the solid-state imaging device according to the fifth aspect of the present technology,
The width of at least one first structure of the plurality of first structures may be different from the width of at least one second structure of the plurality of second structures.

In the solid-state imaging device according to the fifth aspect of the present technology,
The first structure group may be a laminated body including the first structure as a repeating unit,
The second structure group may be a laminated body including the second structure as a repeating unit,
At least one adjacent first structure may be different in the thickness of the first structure and/or the material forming the first structure,
At least one of the adjacent second structures may differ in the thickness of the second structure and/or the material forming the first structure.

As the solid-state imaging device according to the sixth aspect of the present technology,
A pixel region formed on the light incident side of the substrate, in which a plurality of pixels including a photoelectric conversion unit are arranged;
A peripheral circuit portion formed around the pixel region and including an active element;
A structure having at least a first structure group having a plurality of first structures and a second structure group having a plurality of second structures between the pixel region and the peripheral circuit section. A group formation area is formed,
The substrate includes a first semiconductor chip portion including a first multilayer wiring layer and the pixel region;
A second semiconductor chip portion including a second multilayer wiring layer and the peripheral circuit portion is bonded to each other, and the first semiconductor chip portion and the second semiconductor chip portion are the first semiconductor. Electrically connected by a connecting conductor penetrating the chip,
Provided is a solid-state imaging device in which the first semiconductor chip section and the second semiconductor chip section are bonded to each other with the first multilayer wiring layer and the second multilayer wiring layer facing each other.

In the solid-state imaging device according to the sixth aspect of the present technology,
The wavelength selectivity of the first structure group and the wavelength selectivity of the second structure group may be different from each other.

In the solid-state imaging device according to the sixth aspect of the present technology,
The distance between at least one adjacent first structure and the distance between at least one adjacent second structure may be different.

In the solid-state imaging device according to the sixth aspect of the present technology,
The width of at least one first structure of the plurality of first structures may be different from the width of at least one second structure of the plurality of second structures.

In the solid-state imaging device according to the sixth aspect of the present technology,
The first structure group may be a laminated body including the first structure as a repeating unit,
The second structure group may be a laminated body including the second structure as a repeating unit,
At least one adjacent first structure may be different in the thickness of the first structure and/or the material forming the first structure,
At least one of the adjacent second structures may differ in the thickness of the second structure and/or the material forming the first structure.

Further, in the present technology, the solid-state imaging device according to the first aspect of the present technology, the solid-state imaging device according to the second aspect of the present technology, the solid-state imaging device of the third aspect according to the present technology, and the solid-state imaging device according to the present technology. There is provided an electronic apparatus on which the solid-state imaging device according to the fourth aspect, the fifth-side solid-state imaging device according to the present technology, or the sixth-side solid-state imaging device according to the present technology is mounted.

According to the present technology, it is possible to further suppress the adverse effect of hot carrier light emission and further improve the image quality. Note that the effects described here are not necessarily limited, and may be any of the effects described in the present disclosure.

It is a block diagram which shows the structural example of the solid-state imaging device to which this technique is applied. It is sectional drawing which shows the structural example of the solid-state imaging device to which this technique is applied. It is sectional drawing which shows the structural example of the solid-state imaging device to which this technique is applied. FIG. 5 is a cross-sectional view showing a configuration example of a structure group and a graph showing a result of transmittance of the structure group. FIG. FIG. 5 is a cross-sectional view showing a configuration example of a structure group and a graph showing a result of transmittance of the structure group. FIG. FIG. 5 is a cross-sectional view showing a configuration example of a structure group and a graph showing a result of transmittance of the structure group. FIG. FIG. 5 is a cross-sectional view showing a configuration example of a structure group and a graph showing a result of transmittance of the structure group. FIG. FIG. 5 is a cross-sectional view showing a configuration example of a structure group and a graph showing a result of transmittance of the structure group. FIG. FIG. 5 is a cross-sectional view showing a configuration example of a structure group and a graph showing a result of transmittance of the structure group. FIG. FIG. 5 is a cross-sectional view showing a configuration example of a structure group and a graph showing a result of transmittance of the structure group. FIG. FIG. 5 is a cross-sectional view showing a configuration example of a structure group and a graph showing a result of transmittance of the structure group. FIG. It is a top view which shows the example of arrangement|positioning of a structure group. It is a top view which shows the example of arrangement|positioning of a structure group. It is a top view which shows the example of arrangement|positioning of a structure group. It is a top view which shows the example of arrangement|positioning of a structure group. It is sectional drawing which shows the structural example of the solid-state imaging device to which this technique is applied. It is a typical sectional view showing the example of composition of the solid-state image sensing device to which this art is applied. From the relationship between the thickness (film thickness) and the period of the structures forming the first structure group stacked body and the second structure group stacked body, the first structure group and second structure group It is sectional drawing for demonstrating a structural example. 19 is a graph showing the results of the transmittances of the first structure group stack and the second structure group stack shown in FIG. 18. From the relationship between the thickness (film thickness) and the period of the structures forming the first structure group stacked body and the second structure group stacked body, the first structure group and second structure group It is sectional drawing for demonstrating a structural example. 21 is a graph showing the results of the transmittances of the stack of the first structure group and the stack of the second structure group shown in FIG. 20. From the relationship between the thickness (film thickness) and the period of the structures forming the first structure group stacked body and the second structure group stacked body, the first structure group and second structure group It is sectional drawing for demonstrating a structural example. FIG. 23 is a graph showing the results of the transmittance of the laminate of the first structure group and the laminate of the second structure group shown in FIG. 22. From the relationship between the thickness (film thickness) and the period of the structures forming the first structure group stacked body and the second structure group stacked body, the first structure group and second structure group It is sectional drawing for demonstrating a structural example. FIG. 25 is a graph showing the results of the transmittance of the laminate of the first structure group and the laminate of the second structure group shown in FIG. 24. It is sectional drawing which shows the structural example of the solid-state imaging device to which this technique is applied. It is sectional drawing which shows the structural example of the solid-state imaging device to which this technique is applied. It is a figure which shows the usage example of the solid-state imaging device of the 1st-5th embodiment to which this technique is applied. It is a functional block diagram of an example of an electronic device concerning a 6th embodiment to which this art is applied. It is a figure which shows an example of a schematic structure of an endoscopic surgery system. It is a block diagram showing an example of functional composition of a camera head and a CCU. It is a block diagram showing an example of a schematic structure of a vehicle control system. It is explanatory drawing which shows an example of the installation position of a vehicle exterior information detection part and an imaging part.

Hereinafter, a suitable mode for carrying out the present technology will be described. The embodiment described below shows an example of a typical embodiment of the present technology, and the scope of the present technology is not narrowly construed by this. In the drawings, "upper" means the upper direction or the upper side in the drawing, "lower" means the lower direction or the lower side in the drawing, and "left" unless otherwise specified. It means leftward or leftward in the figure, and "right" means rightward or rightward in the figure. Further, in the drawings, the same or equivalent elements or members are designated by the same reference numerals, and overlapping description will be omitted.

The description will be given in the following order.
1. Outline of this technology 2. First embodiment (example 1 of solid-state imaging device)
3. Second embodiment (example 2 of solid-state imaging device)
4. Third embodiment (example of electronic device)
5. 5. Use example of solid-state imaging device to which the present technology is applied Application example to endoscopic surgery system 7. Application example to mobile

<1. Overview of this technology>
First, the outline of the present technology will be described.

In a solid-state imaging device, a photoelectric conversion element, an amplifier circuit, a peripheral circuit for image processing, and a multilayer wiring layer for connecting elements and circuits are formed on the first main surface (light receiving surface) side on a silicon substrate. It Further, in the solid-state imaging device, a cover glass is arranged above the first main surface of the chip on which a light-collecting structure such as a microlens or a color filter is formed, and the cover glass is arranged on the outer peripheral side of the first main surface or the first surface of the chip. 2 has a structure in which terminals are formed on the main surface side.

In addition, in order to realize high performance and high speed of the solid-state imaging device, the scale of the peripheral circuit is increased and the processing speed of the peripheral circuit is also increased. Further, in order to improve the gradation expression (resolution) as one of high image quality, it is necessary to increase the voltage. On the other hand, in order to realize cost reduction, it is required to arrange the pixel portion and the peripheral circuit in a short distance so as to make the chip size as small as possible. In addition, efforts have also begun to enable high-speed signal transmission by bonding and joining a plurality of chips.

However, in this case, since the photoelectric conversion element and the peripheral circuit are formed in a close range, there may be a matter specific to the image sensor. Since the photoelectric conversion element treats minute carriers (electrons) as a signal, the influence of heat from a peripheral circuit or an electromagnetic field may be easily mixed as noise. In addition, minute hot carrier emission emitted from the transistor or diode may greatly affect the image sensor characteristics.

Hot carrier light emission is light emission caused by state recombination of electrons and holes generated when carriers accelerated between the source and drain collide and ionize at the end of the drain, or either of them. This light emission is small even in a transistor having no problem in characteristics, but it is constantly generated. The amount of emitted light exponentially increases as the voltage applied to the transistor increases.

In addition, the amount of light emission increases even when the transistor is operated at high speed. Since the emitted light is diffused in all directions, the effect is very small if it is far from the transistor, but when the photoelectric conversion element and the circuit are placed very close to each other, the emitted light does not diffuse so much and a considerable number of photons are injected into the photoelectric conversion element. To be done. Due to insufficient diffusion, the generation distribution of hot carrier light emission caused by the difference in the transistor arrangement density of the circuit and the difference in the active ratio is reflected in the image as two-dimensional information. Therefore, a structure designed for light shielding is required in order to suppress the injection amount into the photoelectric conversion element to be below the detection limit.

Note that not only the photoelectric conversion element but also the high-sensitivity analog element may be similarly affected. For example, a device such as a flash memory is highly densified and multi-valued, and therefore, there is a concern that the value held may change if noise from the outside is mixed.

The present technology has been made in view of the above. According to the present technology, it is possible to further suppress the adverse effect of hot carrier light emission and further improve the image quality.

The solid-state imaging device according to an embodiment of the present technology is configured with at least two structure groups or a plurality of structure structures configured with at least two structure structures in order to further suppress adverse effects due to hot carrier light emission. A group of structures is provided. In the at least two structure groups, one of the at least two structure groups and the other at least one structure group are made of a material constituting the structure, the width of the structure, and the structure. It is formed so as to differ in at least one of the thickness and the distance between two adjacent structures. In a structure group composed of a plurality of structures, at least one of a material, a width and a thickness of each of the plurality of structures and a distance between two adjacent structures in the plurality of structures is predetermined. The plurality of structures are arranged so as to have a pattern of.

Hereinafter, embodiments according to the present technology will be described in detail.

<2. First Embodiment (Example 1 of Solid-State Imaging Device)>
The solid-state imaging device according to the first embodiment (Example 1 of solid-state imaging device) according to the present technology has, as a first aspect, an element formation portion in which a plurality of elements are formed, and an element formation portion stacked between the element formation portions. And a wiring section for forming a wiring connecting the light receiving element for performing photoelectric conversion, an active element forming a peripheral circuit arranged around the light receiving element, a light receiving element and the active section. It is a solid-state imaging device in which at least two structure groups composed of at least two structures are arranged between elements.

In the first aspect, in the at least two structure groups, one of the at least two structure groups and the other at least one structure group constitute a material, and a width of the structure. , The thickness of the structure and the distance between the two adjacent structures are different from each other. Then, the at least two structure groups prevent the hot carrier emission generated in the active element from entering the light receiving element. Examples of the material forming the structure include a material having a small light extinction coefficient and a material having a refractive index different from that of silicon (Si). Specifically, SiN, SiO ₂ , SiC, SiCN, SiON, _{SiOC, Al 2 O 3, Ta} 2 O 5 and the like.

As a first aspect of the solid-state imaging device of the first embodiment according to the present technology, a first structure having a plurality of first structures as at least two structure groups formed of at least two structures. An example includes a group and a second structure group having a plurality of second structures. A first structure group having a plurality of first structures and a second structure group having a plurality of second structures are formed in the structure group formation region, and at least one adjacent first structure group is formed. The distance between the structures may be different from the distance between at least one adjacent second structure. Further, the width of at least one first structure of the plurality of first structures and the width of at least one second structure of the plurality of second structures may be different.

In the first aspect of the solid-state imaging device of the first embodiment according to the present technology, the wavelength selectivity of the first structure group and the wavelength selectivity of the second structure group may be different from each other. Then, in the first aspect of the solid-state imaging device of the first embodiment according to the present technology, each of the first structure group and the second structure group may have a trench structure or a stacked body (multilayer film). .. When each of the first structure group and the second structure group is a laminated body (multilayer film), at least one adjacent first structure composes the thickness of the first structure and/or the first structure. Different materials, and at least one adjacent second structure may differ in the thickness of the second structure and/or the material forming the first structure.

The solid-state imaging device according to the first embodiment (Example 1 of solid-state imaging device) according to the present technology has, as a second aspect, an element formation portion in which a plurality of elements are formed, and an element formation portion stacked between the element formation portions. And a wiring section for forming a wiring connecting the light receiving element for performing photoelectric conversion, an active element forming a peripheral circuit arranged around the light receiving element, a light receiving element and the active section. It is a solid-state imaging device in which a structure group including a plurality of structures is arranged between elements.

In the second aspect of the solid-state imaging device of the first embodiment according to the present technology, in the structure group, each material, width and thickness of the plurality of structures and two adjacent structures of the plurality of structures. At least one of the distances is changed to have a predetermined pattern, and the plurality of structures are arranged. Then, the structure group prevents the hot carrier emission generated in the active element from entering the light receiving element. Examples of the respective materials of the plurality of structures include a material having a small light extinction coefficient and a material having a refractive index different from that of silicon (Si). Specifically, SiN, SiO ₂ , SiC, SiCN, _{SiON, SiOC, Al 2 O 3} , Ta 2 O 5 and the like.

Examples of the predetermined pattern include a random pattern, an alternating pattern, a periodic pattern, a block pattern, and a gradual pattern.

Hereinafter, the solid-state imaging device according to the first embodiment of the present technology will be described in more detail with reference to FIGS. 1 to 15.

FIG. 1 is a block diagram showing a solid-state imaging device 11 according to the first embodiment of the present technology.

In FIG. 1, the solid-state imaging device 11 is configured to include a pixel region 12 and a vertical drive circuit 13, a column signal processing circuit 14, a horizontal drive circuit 15, an output circuit 16, and a control circuit 17 as peripheral circuits. ..

A plurality of pixels 18 are arranged in a matrix in the pixel region 12, and each pixel 18 is connected to the vertical drive circuit 13 via a horizontal signal line and also performs column signal processing via a vertical signal line. It is connected to the circuit 14. Each of the plurality of pixels 18 outputs a pixel signal corresponding to the amount of light emitted through an optical system (not shown), and an image of the subject formed in the pixel region 12 is constructed from these pixel signals.

The vertical drive circuit 13 sequentially outputs a drive signal for driving (transferring, selecting, resetting, etc.) each pixel 18 for each row of the plurality of pixels 18 arranged in the pixel region 12 via a horizontal signal line. And supply it to the pixel 18. The column signal processing circuit 14 performs analog-to-digital conversion of an image signal by performing CDS (Correlated Double Sampling) processing on pixel signals output from a plurality of pixels 18 via vertical signal lines. Perform and remove reset noise.

The horizontal drive circuit 15 sequentially supplies a drive signal for outputting a pixel signal from the column signal processing circuit 14 to the column signal processing circuit 14 for each row of the plurality of pixels 18 arranged in the pixel region 12. The output circuit 16 amplifies the pixel signal supplied from the column signal processing circuit 14 at a timing according to the driving signal of the horizontal driving circuit 15, and outputs the amplified pixel signal to the image processing circuit in the subsequent stage.

The control circuit 17 controls the driving of each block inside the solid-state imaging device 11. For example, the control circuit 17 generates a clock signal according to the drive cycle of each block and supplies it to each block.

Next, description will be made with reference to FIG. FIG. 2 is a sectional view of the solid-state imaging device 11M. The solid-state imaging device 11M is a backside illumination type solid-state imaging device. Then, FIG. 26 shows a front-illuminated solid-state imaging device 11cN.

FIG. 2 shows a cross-sectional configuration example in the boundary portion between the pixel region 12M and the peripheral circuit 19M that configure the solid-state imaging device 11M. The peripheral circuit 19M is a general term for the vertical drive circuit 13, the column signal processing circuit 14, the horizontal drive circuit 15, the output circuit 16, or the control circuit 17, which is arranged around the pixel region 12. ..

As shown in FIG. 2, the solid-state imaging device 11M is a first substrate 21M, which is a substrate on which elements constituting the pixel region 12M and the peripheral circuit 19M are arranged, and a substrate which supports the first substrate 21M. The second substrate 22M is configured to be bonded via the bonding layer 23M.

Further, the first substrate 21M is configured by stacking the element forming portion 24M, the wiring portion 25M, and the light collecting portion 26M. The element forming portion 24M is, for example, a silicon wafer obtained by thinly slicing a high-purity silicon single crystal, and the wiring portion 25M is laminated on one surface (the surface facing downward in FIG. 2) of the element forming portion 24M. Then, the light collecting section 26M is laminated on the surface facing the opposite side (the surface facing the upper side in FIG. 2). Note that, hereinafter, the surface on which the wiring portion 25M is stacked on the element forming portion 24M is referred to as a front surface, and the surface on which the light collecting portion 26M is stacked on the element forming portion 24M is referred to as a back surface, as necessary. That is, the solid-state imaging device 11M is a backside illumination type solid-state imaging device in which light is emitted from the backside of the first substrate 21M.

In the wiring portion 25M, a plurality of wirings 27M that connect the elements formed in the element forming portion 24M are arranged via an interlayer insulating film. Then, for example, a drive signal for controlling the drive of the peripheral circuit 19M is supplied via the wiring 27M, or a plurality of pixels 18M (18-1M and 18-2M) arranged in the pixel region 12M. The pixel signal read from is output.

For each of the plurality of pixels 18M (for example, pixel 18-1M, pixel 18-2M) arranged in the pixel region 12M of the solid-state imaging device 11M, the light receiving element 31M (for example, light receiving element 31-1M, A light receiving element 31-2M) is formed, and a color filter 32M (for example, color filters 32-1M and 32-2M) and an on-chip lens 33M (on-chip lenses 33-1M and 33-2M) are formed in the light collecting unit 26M. It is formed.

In the example of FIG. 2, two pixels 18-1M and 18-2M are illustrated. That is, the pixel 18-1M includes a light receiving element 31-1M, a color filter 32-1M, and an on-chip lens 33-1M, and the pixel 18-2M includes a light receiving element 31-2M and a color filter 32-1. 2M and on-chip lens 33-2M. Note that the pixels 18-1M and 18-2M have the same configuration, and when it is not necessary to distinguish them, the pixels 18-1M and 18-2M will be appropriately referred to as the pixels 18 hereinafter, and the respective units configuring the pixels 18-1 and 18-2 will also be referred to as appropriate. The same shall apply.

The light receiving element 31M receives the light transmitted through the color filter 32M and the on-chip lens 33M, performs photoelectric conversion, and generates electric charges according to the amount of the light. The color filter 32M transmits light of a predetermined color (for example, red, green, and blue) for each pixel 18M, and the on-chip lens 33M collects the light emitted to the light receiving element 31M for each pixel 18M. Glow.

Further, the peripheral circuit 19M of the solid-state imaging device 11M is configured by a plurality of active elements 34M (for example, active element 34-1M, active element 34-2M). In the example of FIG. 2, two active elements 34- 1M and 34-2M are shown. The active elements 34-1M and 34-2M are, for example, semiconductor elements such as transistors, and the configuration thereof will be described with reference to FIG. In addition, the active elements 34-1M and 34-2M will be appropriately referred to as active elements 34M hereinafter if it is not necessary to distinguish them.

Thus, in the solid-state imaging device 11M, the light receiving element 31M is arranged in the pixel region 12M and the active element 34M is arranged in the peripheral circuit 19M in the element forming portion 24M. Then, in the solid-state imaging device 11M, in the element forming portion 24M, at least two structures, which are composed of a material that impedes the propagation of light, are formed between the pixel region 12M and the peripheral circuit 19M. A structure group or a structure group including a plurality of structures is formed in the structure group formation region 35M.

As described above, FIG. 26 shows the front side illumination type solid-state imaging device 11cN. The configuration is the same as that of the backside illumination type solid-state imaging device except that the wiring portion 25N is disposed between the element forming portion 24N and the light collecting portion 26N, and thus detailed description thereof is omitted here. ..

This will be described with reference to FIG. FIG. 3A-1 is a cross-sectional view showing the backside illumination type solid-state imaging device 11a according to the first embodiment of the present technology, and FIG. 3B-1 is the first embodiment of the present technology. It is sectional drawing which shows the back surface irradiation type solid-state imaging device 11b of a form. FIG. 3A-2 is an enlarged cross-sectional view of the structure 1-3a-10 that constitutes the first structure group 1-3a of the Pa portion shown in FIG. 3A-1. FIG. 3B-2 is an enlarged cross-sectional view of the structure 1-3b-10 included in the first structure group 1-3b shown in FIG. 3B-1. Then, FIG. 27 shows a front-illuminated solid-state imaging device 11c.

In the solid-state imaging device 11a shown in FIG. 3A-1, a first structure group 1-3a and a second structure group 2-3a having different wavelength selectivity are formed in the element forming portion 24. ing. In FIG. 3(a-1), the first structure group 1-3a is composed of five structures 1-3a-10, and the second structure group 2-3a is composed of five structures 2-3a-. It is composed of 10. For example, the first structure group 1-3a is formed at a constant pitch by filling each of the tapered trenches with a reflection/refraction member such as a silicon oxide film. On the other hand, similarly to the first structure group 1-3a, the second structure group 2-3a is formed by embedding a reflection/refraction member such as a silicon oxide film in each of the tapered trenches and at a constant pitch. However, the pitch width of the second structure group 2-3a (also referred to as a distance between two structures; the same applies hereinafter) is the pitch width of the first structure group 1-3a (between two structures. The distance is different from. The trenches (first structure group 1-3a and second structure group 2-3a) shown in FIG. 3A-1 are formed by FEOL (front-end-of-line). That is, the trenches (the first structure group 1-3a and the second structure group 2-3a) are formed by engraving the surface side (the side opposite to the light incident side) of the element forming portion (semiconductor substrate) 24. It

The tapered trench structure will be described in more detail with reference to FIG. As described above, the structure 1-3a-10 is formed by filling the trench with the reflection/refraction member 1-3a-1 which is, for example, a silicon oxide film. As shown in (a-2), for example, tantalum pentoxide (Ta ₂ O ₅ ) 1-3a-2 is buried in the trench outside the reflection/refraction member 1-3a-1 such as a silicon oxide film. Further, aluminum oxide (Al ₂ O ₃ ) 1-3a-3 is formed outside the tantalum pentoxide (Ta ₂ O ₅ ) 1-3a-2 by being buried in the trench.

The first structure group 1-3a or the second structure group 2-3a is formed by burying a reflection/refraction member such as a silicon oxide film in the trench and formed with a constant pitch width, so that the interference of light causes It acts like a kind of bandpass filter with wavelength selectivity. Therefore, it may be difficult to completely suppress the propagation of light having a partial wavelength due to the interference effect of light. On the other hand, it is possible to suppress the propagation of light (for example, light L of hot carrier emission generated in the MOS transistor Tr101) by combining the first structure group 1-3a and the second structure group 2-3a. It is possible. For example, it is possible to suppress the light having the wavelength that has passed through the first structure group 1-3a by the second structure group 2-3a.

In the solid-state imaging device 11b shown in FIG. 3B-1 as well, the first structure group 1-3b and the second structure group 2-3b having different wavelength selectivity are formed in the element forming portion 24. ing. In FIG. 3B-1, the first structure group 1-3b is composed of five structures 1-3b-10, and the second structure group 2-3b is composed of five structures 2-3b-. It is composed of 10. For example, the first structure group 1-3b is formed at a constant pitch by embedding a reflection/refraction member, which is, for example, a silicon oxide film, in each trench having an inverse taper shape. On the other hand, the second structure group 2-3b is similar to the first structure group 1-3b in that each of the reverse taper-shaped trenches is filled with a reflection/refraction member such as a silicon oxide film and has a constant pitch. Although formed, the pitch width of the second structure group 2-3b (the distance between the two structures) is the same as the pitch width of the first structure group 1-3b (the distance between the two structures). Is different. The trench (the first structure group 1-3b and the second structure group 2-3b) shown in FIG. 3B-1 is formed by digging the back surface side (light incident side) of the element forming portion (semiconductor substrate) 24. It is formed intricately.

The reverse taper type trench structure will be described in more detail with reference to FIG. As described above, the structure 1-3b-10 is formed by filling the trench with the reflection/refraction member 1-3b-1 which is, for example, a silicon oxide film. As shown in (b-2), for example, tantalum pentoxide (Ta ₂ O ₅ ) 1-3b-2 is buried in the trench outside the reflection/refraction member 1-3b-1 such as a silicon oxide film. Further, aluminum oxide (Al ₂ O ₃ ) 1-3b-3 is formed in a trench outside the tantalum pentoxide (Ta ₂ O ₅ ) 1-3b-2.

The first structure group 1-3b or the second structure group 2-3b is formed by burying a reflection/refraction member such as a silicon oxide film in the trench and formed with a constant pitch width, so that the interference of light causes It acts like a kind of bandpass filter with wavelength selectivity. Therefore, it may be difficult to completely suppress the propagation of light having a partial wavelength due to the interference effect of light. On the other hand, it is possible to suppress the propagation of light (for example, light L of hot carrier emission generated in the MOS transistor Tr102) by combining the first structure group 1-3b and the second structure group 2-3b. It is possible. For example, it is possible to suppress the light having the wavelength that has passed through the first structure group 1-3b by the second structure group 2-3b.

As described above, FIG. 27 shows the front-illuminated solid-state imaging device 11c. A first structure group 1-27 and a second structure group 2-27 having wavelength selectivity different from each other are formed in the element forming portion 24. In FIG. 27, the first structure group 1-27 is composed of five structures 1-27-10, and the second structure group 2-27 is composed of five structures 2-27-10. There is. For example, the first structure group 1-27 is formed in a trench with a reflection/refraction member such as a silicon oxide film embedded therein and at a constant pitch. On the other hand, similarly to the first structure group 1-27, the second structure group 2-27 is formed by burying a reflection/refraction member such as a silicon oxide film in the trench and formed at a constant pitch. The pitch width of the second structure group 2-27 (distance between two structures) is different from the pitch width of the first structure group 1-27 (distance between two structures).

Next, a trench is formed in silicon and a silicon oxide film is embedded, and the pitch width (distance between two structures), the trench width (structure width), and the number of trenches (number of structures) are used as parameters. The results of experiments (simulations) on the transmittance (%) are shown in FIGS.

First, a description will be given with reference to FIGS.

The structure group shown in FIG. 4A will be described. As shown in FIG. 4(a), a trench is formed in silicon 1-4a-11 and a silicon oxide film is buried in the trench, and a structure group 1-consisting of 10 structures 1-4a-10 is formed. 4a was produced. In addition, in FIG. 4A, the cross-sectional shape of the structure 1-4a-10 is a rectangular shape, but it may be a tapered shape or an inverse tapered shape. The simulation conditions (experimental conditions) for the structure group 1-4a shown in FIG. 4A are as follows. The wavelength band used is typically 960 nm to 1040 nm.

(Structure group 1-4a)
Pitch width (distance between two structures 1-4a-10): Q1 μm,
-Trench width (width of structures 1-4a-10): R1 μm,
-Number of trenches (number of structures 1-4a-10): 10

By the way, the pitch width of the structure group 1-4a (distance between the two structures 1-4a-10) is two adjacent structure 1 in the left-right direction (left-right direction in FIG. 4A). -4a-10, the distance between the right side of the left structure 1-4a-10 and the left side of the right structure 1-4a-10.

The structure group shown in FIG. 5A will be described. As shown in FIG. 5(a), a trench is formed in silicon 1-5a-11, a silicon oxide film is buried in the trench, and a structure group 1-consisting of 10 structures 1-5a-10 is formed. 5a was produced. Although the structure 1-5a-10 has a rectangular cross-sectional shape in FIG. 5A, it may have a tapered shape or an inverse tapered shape. The simulation conditions (experimental conditions) for the structure group 1-5a shown in FIG. 5A are as follows. The wavelength band used is typically 960 nm to 1040 nm.

(Structure group 1-5a)
Pitch width (distance between two structures 1-5a-10): Q2 μm,
-Trench width (width of the structures 1-5a-10): R1 μm,
-Number of trenches (number of structures 1-5a-10): 10

By the way, the pitch width of the structure group 1-5a (distance between the two structures 1-5a-10) is equal to the two structures 1-left and right (in the left-right direction in FIG. 5A). 5a-10, the distance between the right side of the left structure 1-5a-10 and the left side of the right structure 1-5a-10.

The structure group shown in FIG. 6A will be described. As shown in FIG. 6A, a trench is formed in silicon 1-6a-11, a silicon oxide film is buried in the trench, and a first structure group composed of five structures 1-6a-10 is formed. 1-6a is manufactured, a trench is further formed in the silicon 2-6a-11, a silicon oxide film is buried, and a second structure group 2 composed of five structures 2-6a-10 is formed. 6a was produced. Then, the first structure group 1-6a and the second structure group 2-6a were arranged in series in this order. In addition, in FIG. 6A, the cross-sectional shape of the structure 1-6a-10 and the structure 2-6a-10 is rectangular, but may be a tapered shape or an inverse tapered shape. Simulation conditions (experimental conditions) for the first structure group 1-6a and the second structure group 2-6a shown in FIG. 6A are as follows. The wavelength band used is typically 960 nm to 1040 nm.

(First structure group 1-6a)
Pitch width (distance between two structures 1-6a-10): Q1 μm,
-Trench width (width of the structure 1-6a-10): R1 m,
-Number of trenches (number of structures 1-6a-10): 5

(Second structure group 2-6a)
Pitch width (distance between two structures 2-6a-10): Q2 μm,
-Trench width (width of structure 2-6a-10): R1 μm,
-Number of trenches (number of structures 2-6a-10): 5

By the way, the pitch width (distance between two structures 1-6a-10) of the first structure group 1-6a is two structures adjacent to each other in the left-right direction (the left-right direction in FIG. 6A). 1-6a-10, the distance between the right side of the left structure 1-6a-10 and the left side of the right structure 1-6a-10. Similarly, the pitch width of the second structure group 2-6a (distance between the two structures 2-6a-10) is two structures adjacent to each other in the left-right direction (left-right direction in FIG. 6A). In the object 2-6a-10, the distance between the right side of the left structure 2-6a-10 and the left side of the right structure 2-6a-10.

Consider the transmittance results shown in FIGS. 4(b), 5(b) and 6(b).
As shown in FIG. 4B, the structure groups 1-4a have high transmittances at wavelengths of 970±10 nm and 1010±10 nm. Further, as shown in FIG. 5B, in the structure group 1-5a, the transmittances of 990±10 nm and 1030±10 nm are high. When a structure group is formed using a reflection/refraction member such as a silicon oxide film and having a constant pitch width (distance between two structures), it has wavelength selectivity due to light interference. Therefore, it may be difficult to completely actuate the propagation of light of some wavelengths by acting like a kind of bandpass filter.

On the other hand, as shown in FIG. 6B, the first structure group 1-6a and the second structure group 2-6a are combined to successfully combine at least two kinds of structure groups having different wavelength selectivity. If it is possible, it works as if a kind of band pass filter is combined, and the propagation of light can be suppressed.

Next, description will be made with reference to FIGS.

The structure group shown in FIG. 7A will be described. As shown in FIG. 7A, a trench is formed in silicon 1-7a-11, a silicon oxide film is buried in the trench, and a structure group 1 including 10 structures 1-7a-10 is formed. 7a was produced. In addition, in FIG. 7A, the sectional shape of the structure 1-7a-10 is a rectangular shape, but may be a tapered shape or an inverse tapered shape. The simulation conditions (experimental conditions) for the structure group 1-7a shown in FIG. 7A are as follows. The wavelength band used is typically 960 nm to 1040 nm.

(Structure group 1-7a)
Pitch width (distance between two structures 1-7a-10): Q1 μm,
-Trench width (width of the structure 1-7a-10): R1 μm,
-Number of trenches (number of structures 1-7a-10): 10

By the way, the pitch width of the structure group 1-7a (the distance between the two structures 1-7a-10) is determined by the two structures 1 adjacent to each other in the left-right direction (the left-right direction in FIG. 7A). -7a-10, the distance between the right side of the left structure 1-7a-10 and the left side of the right structure 1-7a-10.

The structure group shown in FIG. 8A will be described. As shown in FIG. 8A, a trench is formed in silicon 1-8a-11, a silicon oxide film is buried in the trench, and a structure group 1 including 10 structures 1-8a-10 is formed. 8a was produced. In addition, in FIG. 8A, the sectional shape of the structure 1-8a-10 is a rectangular shape, but may be a tapered shape or an inverse tapered shape. Simulation conditions (experimental conditions) for the structure group 1-8a shown in FIG. 8A are as follows. The wavelength band used is typically 960 nm to 1040 nm.

(Structure group 1-8a)
Pitch width (distance between two structures 1-8a-10): Q1 to Q2 μm,
Gradually (for example, in Xμm steps), the distance between the two structures is shortened, and Q1 μm (the first structure 1-8a-10 from the left side and the second structure from the left side in FIG. From the distance from the structure 1-8a-10) to Q2 μm (the structure 1-8a-10, which is the ninth structure from the left side in FIG. 8A, and the structure 1-8a-10, which is the tenth structure from the left side. The distance between two structures was shortened by changing the distance between the two structures.
-Trench width (width of the structure 1-8a-10): R1 m,
-Number of trenches (number of structures 1-8a-10): 10

By the way, the pitch width of the structure group 1-8a (distance between the two structures 1-8a-10) is determined by the two structures 1 adjacent to each other in the left-right direction (the left-right direction in FIG. 8A). -8a-10, the distance between the right side of the left structure 1-8a-10 and the left side of the right structure 1-8a-10.

Consider the transmittance results shown in FIGS. 7(b) and 8(b).
As shown in FIG. 7B, the structure group 1-7a has high transmittance at wavelengths of 970±10 nm and 1010±10 nm. When reflective/refractive members such as silicon oxide film are used, and when a group of structures is formed with a constant pitch width, it has a wavelength selectivity due to the interference of light, so it acts as a kind of bandpass filter. However, it may be difficult to completely suppress the propagation of light of some wavelengths.

On the other hand, as shown in FIG. 8B, in the structure group 1-8a, a kind of band-pass filter is obtained by gradually changing the pitch width (distance between two structures) little by little. It works as if a plurality of them are combined, and it is possible to suppress the propagation of light.

Further, a description will be given with reference to FIGS. 9 to 11.

The structure group shown in FIG. 9A will be described. As shown in FIG. 9A, a trench is formed in silicon 1-9a-11, a silicon oxide film is embedded in the trench, and a structure group 1-containing 10 structures 1-9a-10 is formed. 9a was produced. In addition, in FIG. 9A, the cross-sectional shape of the structure 1-9a-10 is a rectangular shape, but may be a tapered shape or an inverse tapered shape. The simulation conditions (experimental conditions) for the structure group 1-9a shown in FIG. 9A are as follows. The wavelength band used is typically 960 nm to 1040 nm.

(Structure group 1-9a)
・Pitch width (distance between two structures 1-9a-10): Q1 μm,
-Trench width (width of the structure 1-9a-10): R2 μm,
-Number of trenches (number of structures 1-9a-10): 10

By the way, the pitch width of the structure group 1-9a (the distance between the two structures 1-9a-10) is determined by the two structures 1 adjacent to each other in the left-right direction (the left-right direction in FIG. 9A). -9a-10, the distance between the right side of the left structure 1-9a-10 and the left side of the right structure 1-9a-10.

The structure group shown in FIG. 10A will be described. As shown in FIG. 10(a), a trench is formed in silicon 1-10a-11, a silicon oxide film is buried in the trench, and a structure group 1-consisting of 10 structures 1-10a-10 is formed. 10a was produced. Although the structure 1-10a-10 has a rectangular cross-sectional shape in FIG. 10A, it may have a tapered shape or an inverse tapered shape. Simulation conditions (experimental conditions) for the structure group 1-10a shown in FIG. 10(a) are as follows. The wavelength band used is typically 960 nm to 1040 nm.

(Structure group 1-10a)
Pitch width (distance between two structures 1-10a-10): Q1 μm,
-Trench width (width of the structure 1-10a-10): R3 μm,
-Number of trenches (number of structures 1-10a-10): 10

By the way, the pitch width of the structure group 1-10a (distance between the two structures 1-10a-10) is equal to the two structures 1 adjacent to each other in the left-right direction (left-right direction in FIG. 10A). -10a-10, the distance between the right side of the left structure 1-10a-10 and the left side of the right structure 1-10a-10.

The structure group shown in FIG. 11A will be described. As shown in FIG. 11A, a trench is formed in silicon 1-11a-11, a silicon oxide film is embedded in the trench, and a first structure group including five structures 1-11a-10 is formed. 1-11a is manufactured, a trench is further formed in the silicon 2-11a-11, a silicon oxide film is buried, and a second structure group 2 consisting of five structures 2-11a-10 is formed. 11a was produced. Then, the first structure group 1-11a and the second structure group 2-11a were arranged in series in this order. In addition, in FIG. 11A, although the cross-sectional shape of the structure 1-11a-10 and the structure 2-11a-10 is a rectangular shape, it may be a tapered shape or an inverse tapered shape. The simulation conditions (experimental conditions) for the first structure group 1-11a and the second structure group 2-11a shown in FIG. 11A are as follows. The wavelength band used was typically 960 nm to 1040 nm.

(First structure group 1-11a)
Pitch width (distance between two structures 1-6a-10): Q1 μm,
-Trench width (width of the structure 1-6a-10): R2 μm,
-Number of trenches (number of structures 1-6a-10): 5

(Second structure group 2-11a)
Pitch width (distance between two structures 2-6a-10): Q1 μm,
-Trench width (width of structure 2-6a-10): R3 μm,
-Number of trenches (number of structures 2-6a-10): 5

By the way, the pitch width of the first structure group 1-11a (distance between the two structures 1-11a-10) is two structures adjacent to each other in the left-right direction (left-right direction in FIG. 11A). 1-11a-10, the distance between the right side of the left structure 1-11a-10 and the left side of the right structure 1-11a-10. Similarly, the pitch width of the second structure group 2-11a (distance between the two structures 2-11a-10) is two structures adjacent to each other in the left-right direction (left-right direction in FIG. 11A). In the object 2-11a-10, it is the distance between the right side of the left structure 2-11a-10 and the left side of the right structure 2-11a-10.

Consider the transmittance results shown in FIGS. 9(b), 10(b) and 11(b).
As shown in FIG. 9B, in the structure group 1-9a, the transmittances at the wavelengths of 965±10 nm and 1010±10 nm are high. Further, as shown in FIG. 10B, the structure group 1-10a has high transmittances of 990±10 nm and 1030±10 nm. When a structure is formed using a reflective/refractive member such as a silicon oxide film and with a constant pitch width (distance between two structures), it has wavelength selectivity due to the interference of light. In some cases, it may be difficult to completely suppress the propagation of light of some wavelengths by acting like a kind of bandpass filter.

On the other hand, as shown in FIG. 11B, the first structure group 1-11a and the second structure group 2-11a are combined to form the first structure group 1-11a to the second structure group 2 Even with a constant pitch width (distance between two structures) up to −11a, the trench width (structure width) can be changed. Like the first structure group 1-11a and the second structure group 2-11a, if at least two kinds of structure groups having different wavelength selectivity can be successfully combined, it seems that a kind of bandpass filter is combined. Can be suppressed and the propagation of light can be suppressed.

Next, with reference to FIGS. 12 to 15, an example of arrangement of at least two structure groups including at least two structures or a structure group including a plurality of structures in the solid-state imaging device will be described.

In FIG. 12, the first planar arrangement of the structure group formation regions 35E in which at least two structure groups each including at least two structures or a structure group each including a plurality of structures are formed. An example is shown.

As shown in FIG. 12, in the solid-state imaging device 11E, a structure group formation region 35E is arranged so as to pass between the pixel region 12 and the peripheral circuit 19 and surround the pixel region 12 in plan view. There is. By arranging the structure group formation region 35E in this way, it is possible to prevent light generated by the active element 34 of the peripheral circuit 19 from entering the pixel region 12 from any direction. Therefore, it is possible to more reliably suppress the adverse effect of light or the like generated by the hot carriers.

Next, FIG. 13 shows a second planar arrangement example of the structure group formation region 35F.

As shown in FIG. 13, in the solid-state imaging device 11F, the structure group formation region 35F is arranged so as to pass between the pixel region 12 and the peripheral circuit 19 and surround the peripheral circuit 19 in plan view. There is. By arranging the structure group formation region 35F in this way, light generated in the active element 34 of the peripheral circuit 19 is prevented from leaking in any direction, and the light is prevented from entering the pixel region 12. can do. Therefore, in the solid-state imaging device 11F, it is possible to reliably suppress the adverse effect of light or the like generated by hot carriers. The structure shown in FIG. 2 can be adopted as the sectional configuration of the structure group formation region 35F.

FIG. 14 shows a third planar arrangement example of the structure group formation region 35G.

As shown in FIG. 14, in the solid-state imaging device 11G, at least the light linearly traveling from the peripheral circuit 19 to the pixel region 12 is blocked so as to pass at least between the pixel region 12 and the peripheral circuit 19. An object group forming area 35G is arranged. By arranging the structure group formation region 35G in this manner, it is possible to prevent light generated by the active element 34 of the peripheral circuit 19 from linearly entering the pixel region 12. Therefore, in the solid-state imaging device 11G, it is possible to suppress the adverse effect of light or the like generated by hot carriers. The structure shown in FIG. 2 can be adopted as the sectional configuration of the structure group formation region 35G.

FIG. 15 shows a fourth planar arrangement example of the structure group formation region 35H.

As shown in FIG. 15, in the solid-state imaging device 11H, a plurality of structures are combined so as to pass between the pixel region 12 and the peripheral circuit 19 and surround the pixel region 12 in plan view. The structure group forming area 35H is arranged. Here, in the structure group formation region 35H, one of the structures is always arranged on a straight line extending from the outside of the structure group formation region 35H to the pixel region 12, that is, the structure group formation region 35H. Structures are arranged so that light does not pass through linearly from the outside to the pixel region 12.

With the structure group formation region 35H having such a configuration, in the solid-state imaging device 11H, light generated by the active element 34 of the peripheral circuit 19 can be prevented from linearly entering the pixel region 12. Therefore, it is possible to suppress the adverse effect of light generated by hot carriers. In particular, the solid-state imaging device 11H is effective in a configuration in which a relatively large shape cannot be formed due to local stress concentration when forming the structure group formation region 35H, for example. The structure shown in FIG. 2 can be adopted as the sectional configuration of the structure group formation region 35H.

The solid-state imaging device according to the first embodiment of the present technology is the same as the solid-state imaging device according to the second embodiment of the present technology to be described later unless there is a technical contradiction in addition to the contents described above. The contents described in can be applied as they are.

<3. Second Embodiment (Solid-State Imaging Device Example 2)>
The solid-state imaging device according to the second embodiment (Example 2 of solid-state imaging device) of the present technology is, as a first aspect, a pixel formed on the light incident side of a substrate and in which a plurality of pixels including a photoelectric conversion unit are arranged. Region and a peripheral circuit portion formed around the pixel region and including an active element, and arranged between the pixel region and the peripheral circuit portion, and hot carrier emission generated in the active element enters the photoelectric conversion portion. A first semiconductor chip portion including a first multilayer wiring layer and a pixel region, and a second multilayer wiring. A second semiconductor chip portion including a layer and a peripheral circuit portion is bonded to each other, and the first semiconductor chip portion and the second semiconductor chip portion are formed by a connection conductor penetrating the first semiconductor chip portion. The solid-state imaging device is electrically connected, and the first semiconductor chip section and the second semiconductor chip section are bonded together with the first multilayer wiring layer and the second multilayer wiring layer facing each other. By the way, the at least two structure groups including at least two structures include a first structure group having a plurality of first structures and a second structure group having a plurality of second structures. An example of configuration is given.

In the first aspect of the solid-state imaging device of the second embodiment according to the present technology, the at least two structure groups include one structure group out of at least two structure groups and the other at least one structure group. Are formed so as to differ from each other in at least one of the material forming the structure, the width of the structure, the thickness of the structure, and the distance between two adjacent structures. Examples of the material forming the structure include a material having a small light extinction coefficient and a material having a refractive index different from that of silicon (Si). Specifically, SiN, SiO ₂ , SiC, SiCN, SiON, _{SiOC, Al 2 O 3, Ta} 2 O 5 and the like.

As a first aspect of the solid-state imaging device of the second embodiment according to the present technology, a first structure having a plurality of first structures as at least two structure groups composed of at least two structures. An example includes a group and a second structure group having a plurality of second structures. A first structure group having a plurality of first structures and a second structure group having a plurality of second structures are formed in the structure group formation region, and at least one adjacent first structure group is formed. The distance between the structures may be different from the distance between at least one adjacent second structure. Further, the width of at least one first structure of the plurality of first structures and the width of at least one second structure of the plurality of second structures may be different.

In the first aspect of the solid-state imaging device according to the second embodiment of the present technology, the wavelength selectivity of the first structure group and the wavelength selectivity of the second structure group may be different from each other. Then, in the first aspect of the solid-state imaging device of the second embodiment according to the present technology, each of the first structure group and the second structure group may have a trench structure or a stacked body (multilayer film). .. When each of the first structure group and the second structure group is a laminated body (multilayer film), at least one adjacent first structure composes the thickness of the first structure and/or the first structure. Different materials, and at least one adjacent second structure may differ in the thickness of the second structure and/or the material forming the first structure.

As a second aspect, the solid-state imaging device according to the second embodiment (Example 2 of solid-state imaging device) according to the present technology is a pixel formed on the light incident side of a substrate and in which a plurality of pixels including a photoelectric conversion unit are arranged. A region and a peripheral circuit portion formed below the pixel region in the depth direction of the substrate and including an active element, and arranged between the pixel region and the peripheral circuit portion to generate hot carrier light emission generated in the active element. A structure group composed of a plurality of structures for preventing entry into the photoelectric conversion unit, wherein the substrate has a first semiconductor chip unit including a first multilayer wiring layer and the pixel region; A second semiconductor chip portion including a second multilayer wiring layer and a peripheral circuit portion is bonded and configured, and the first semiconductor chip portion and the second semiconductor chip portion are connected to penetrate the first semiconductor chip. A solid-state imaging device electrically connected by a conductor, wherein the first semiconductor chip section and the second semiconductor chip section are bonded to each other with the first multilayer wiring layer and the second multilayer wiring layer facing each other. is there.

In the second aspect of the solid-state imaging device according to the second embodiment of the present technology, in the structure group, each material, width and thickness of the plurality of structures and two adjacent structures in the plurality of structures. At least one of the distances is changed so as to have a predetermined pattern, and the plurality of structures are arranged. Examples of the respective materials of the plurality of structures include a material having a small light extinction coefficient and a material having a refractive index different from that of silicon (Si). Specifically, SiN, SiO ₂ , SiC, SiCN, _{SiON, SiOC, Al 2 O 3} , Ta 2 O 5 and the like.

Examples of the predetermined pattern include a random pattern, an alternating pattern, a periodic pattern, a block pattern, and a gradual pattern.

Hereinafter, the solid-state imaging device of the second embodiment according to the present technology will be described in more detail with reference to FIGS. 16 to 25.

FIG. 16 is a sectional view of a solid-state imaging device 86 according to the second embodiment of the present technology. The solid-state imaging device 86 is a backside illumination type solid-state imaging device.

As in the solid-state imaging device 86 shown in FIG. 16, efforts are under consideration to enable high-speed signal transmission by bonding and joining a plurality of chips. In the solid-state imaging device 86, since the photoelectric conversion unit and the peripheral circuit unit are formed at a close distance, the pixel region and the peripheral circuit unit are three-dimensionally arranged inside the substrate. Since at least two structure groups composed of at least two structures or a structure group composed of a plurality of structures are arranged between the three-dimensionally arranged pixel region and the peripheral circuit section, Even if the region and the peripheral circuit are arranged at a close distance, the light emitted from the active element during the operation of the active element in the peripheral circuit section is blocked, and the invasion of the light into the photoelectric conversion section is suppressed.

The solid-state imaging device 86 is configured by bonding the first semiconductor chip unit 310 and the second semiconductor chip unit 45 together. The first semiconductor chip unit 310 includes a photodiode PD serving as a photoelectric conversion unit, a pixel array (hereinafter, referred to as a pixel region) 23 in which a plurality of pixels each including a plurality of pixel transistors are two-dimensionally arranged, and a control unit. The circuit 24 is formed.

The photodiode PD is formed with the n-type semiconductor region 34 and the p-type semiconductor region 350 on the substrate surface side in the semiconductor well region 320. A gate electrode 36 is formed on the surface of a substrate forming a pixel via a gate insulating film, and the source/drain regions 33 paired with the gate electrode 36 form pixel transistors Tr1 and Tr2. In FIG. 16, the plurality of pixel transistors are represented by two pixel transistors Tr1 and Tr2. The pixel transistor Tr1 adjacent to the photodiode PD corresponds to the transfer transistor, and the source/drain region thereof corresponds to the floating diffusion FD. Each unit pixel is separated by the element separation region 38.

On the other hand, the control circuit 24 is composed of a plurality of MOS transistors formed in the semiconductor well region 320. In FIG. 16, a plurality of MOS transistors forming the control circuit 24 are represented by MOS transistors Tr3 and Tr4. Each of the MOS transistors Tr3 and Tr4 is formed by an n-type source/drain region 33 and a gate electrode 36 formed via a gate insulating film.

On the front surface side of the substrate, a multi-layered wiring layer 41 formed by arranging a plurality of layers of wiring 40 with an interlayer insulating film 39 interposed is formed. The wiring 40 is formed of, for example, a copper wiring. The pixel transistor and the MOS transistor of the control circuit are connected to a required wiring 40 via a connection conductor 44 penetrating the first insulating film 43a and the second insulating film 43b. The first insulating film 43a is formed of, for example, a silicon oxide film, and the second insulating film 43b is formed of, for example, a silicon nitride film serving as an etching stopper.

An antireflection film 61 is formed on the back surface of the semiconductor well region 320. A waveguide 70 made of a waveguide material film (eg, SiN film) 69 is formed in a region of the antireflection film 61 corresponding to each photodiode PD. On the back surface of the semiconductor well region 320, in the insulating film 62 made of, for example, a SiO film, a light shielding film 63 that shields a required region from light is formed. Furthermore, a color filter 73 and an on-chip microlens 74 are formed through the flattening film 71 so as to correspond to each photodiode PD.

On the other hand, in the second semiconductor chip portion 45, the logic circuit 25 including a signal processing circuit for signal processing is formed. The logic circuit 25 is configured, for example, by forming a plurality of MOS transistors in a p-type semiconductor well region 46 so as to be separated by an element isolation region 50. Here, the plurality of MOS transistors are represented by MOS transistors Tr6, Tr7, and Tr8. Each of the MOS transistors Tr6, Tr7, Tr8 is formed with a pair of n-type source/drain regions 47 and a gate electrode 48 formed via a gate insulating film.

On the semiconductor well region 46, a multi-layered wiring layer 55 is formed in which a plurality of layers of wiring 53 and a wiring 57 having a barrier metal layer 58 are arranged with an interlayer insulating film 49 interposed therebetween. Each MOS transistor Tr6, Tr7, Tr8 is connected to a required wiring 53 via a connection conductor 54 penetrating the first insulating film 43a and the second insulating film 43b.

The first semiconductor chip unit 310 and the second semiconductor chip unit 45 are attached to each other with the multilayer wiring layers 41 and 55 facing each other, for example, via an adhesive layer 60. On the bonding surface of the multilayer wiring layer 55 on the second semiconductor chip portion 45 side, a stress correction film 59 for reducing bonding stress is formed. In addition to this, the plasma bonding may be used.

Further, the first semiconductor chip portion 310 and the second semiconductor chip portion 45 are electrically connected via the connection conductor 68. That is, a connection hole that penetrates the semiconductor well region 320 of the first semiconductor chip portion 310 and reaches the required wiring 40 of the multilayer wiring layer 41 is formed. Further, a connection hole is formed which penetrates the semiconductor well region 320 and the interlayer insulating film 39 of the first semiconductor chip portion 310 and reaches the required wiring 53 of the multilayer wiring layer 55 of the second semiconductor chip portion 45. Connection conductors 68 that connect to each other are embedded in these connection holes to electrically connect the first and second semiconductor chip portions 310 and 45. The periphery of the connection conductor 68 is covered with an insulating film 67 in order to insulate the semiconductor well region 320. The wirings 40 and 57 connected to the connection conductor 68 correspond to vertical signal lines. The connecting conductor 68 is connected to an electrode pad (not shown) or can be an electrode pad.

The connection conductor 68 is formed after the first semiconductor chip section 310 and the second semiconductor chip section 45 are bonded together and then the semiconductor well region 320 of the first semiconductor chip section 310 is thinned. After that, the cap film 72, the flattening film 71, the color filter 73, and the on-chip microlens 74 are formed. In the semiconductor well region 320, the insulating spacer layer 42 is formed in a region surrounding the connection conductor 68.

In the solid-state imaging device 86, the pixel region 23 and the logic circuit 25 in the peripheral circuit section are arranged above and below in the substrate depth direction, and the photodiode PD and the MOS transistors Tr6 to Tr8 of the logic circuit 25 are located in close proximity to each other. ing.

A protection diode may be provided in the logic circuit 25 in the peripheral circuit section.

According to the solid-state imaging device 86, at least two structures are provided between the pixel region 23 and the peripheral circuit section (for example, the logic circuit 25), for example, in the vicinity of the bonding surface of the first and second semiconductor chip sections 310 and 45. At least two structure groups 87 composed of or a structure group 87 composed of a plurality of structures are arranged. Hot carrier light emission generated in the MOS transistor of the logic circuit 25 is suppressed by the at least two structure group 87 including at least two structures or the structure group 87 including a plurality of structures, and the photodiode PD Does not enter. At least two structure groups 87' composed of at least two structures or a structure group 87' composed of a plurality of structures, and at least two structure groups 87 composed of at least two structures Or when using a combination of a structure group 87 composed of a plurality of structures and at least two structure groups 87′ composed of at least two structures or a structure group 87′ composed of a plurality of structures Also, similarly, it is possible to suppress the incidence of hot carrier light emission on the photodiode PD. By the way, at least two structure groups 87 composed of at least two structures, a structure group 87 composed of a plurality of structures, or at least two structure groups 87′ composed of at least two structures. Alternatively, a light blocking member may be further formed in a region where a structure group 87' composed of a plurality of structures is formed. Further, it is possible to suppress the light, which is generated during the operation of the protection diode arranged on the logic circuit side, from entering the photodiode PD. Therefore, it is possible to prevent the light generated from the active element such as hot carrier light emission from being reflected in the pixel region, and thus to provide the solid-state imaging device with improved image quality. Note that at least two structure groups including at least two structures or a structure group including a plurality of structures may be formed in the structure group formation region 35. The structure group formation region 35 is a region near the bonding surface of the first and second semiconductor chip portions 310 and 45, and is a region of the multilayer wiring layer 41 and the multilayer wiring layer 55 near the bonding surface and the adhesive layer 60. And a stress correction film forming region. Further, at least two structure groups composed of at least two structures or a structure group composed of a plurality of structures are provided in the multilayer wiring layer 41 (interlayer insulating film 39) and/or the multilayer wiring layer 55 (interlayer It may be formed in a region of the insulating film 49) (a region other than the region near the bonding surface, and this region may also be a structure group formation region).

Next, with reference to FIG. 17, a solid-state imaging device according to the second embodiment of the present technology will be described in more detail. FIG. 17A shows the solid-state imaging device 86a. The solid-state imaging device 86a has a structure in which the first semiconductor chip portion and the second semiconductor chip portion are joined (bonded) to each other and are three-dimensional in the vertical direction. The first semiconductor chip part is composed of a semiconductor well region 320 in which a photodiode PD340 serving as a photoelectric conversion part is formed, and a multi-layer wiring layer in which a plurality of layers of wiring are arranged via an interlayer insulating film 39, The second semiconductor chip portion is composed of a semiconductor well region 46 in which a logic circuit including a MOS transistor Tr9 is formed, and a multi-layer wiring layer formed by arranging a plurality of layers of wiring via an interlayer insulating film 49. There is.

The structure group formation region 35 is formed corresponding to the joint portion where the first semiconductor chip portion and the second semiconductor chip portion are joined and the layer in the vicinity of the joint portion. As shown by an arrow Z3 in FIG. 17, the first structure group 1-13 is on the side of the interlayer insulating film 49 (multilayer wiring layer) that constitutes the second semiconductor chip (lower side in FIG. 7A). As shown by an arrow Z2 in FIG. 17, the second structure group 2-13 is arranged in the structure group formation region 35, and the second structure group 2-13 has an interlayer insulating film 39 (multilayer wiring layer) side (FIG. 7 (a) (upper side in FIG. 7A) is arranged in the structure group formation region 35. Note that, as indicated by an arrow Z4 in FIG. 17, the first structure group 1-13 has a region (outside the structure group formation region 35) of the interlayer insulating film 49 (multilayer wiring layer) that constitutes the second semiconductor chip. Area, and this area serves as a structure group formation area.), as shown by an arrow Z1 in FIG. 17, the second structure group 2-13 includes the first semiconductor chip. It may be arranged in a region of the inter-layer insulating film 39 (multilayer wiring layer) constituting (a region outside the structure group formation region 35, and this region becomes a structure group formation region). Although not shown in FIG. 17, both the first structure group 1-13 and the second structure group 2-13 are on the side of the interlayer insulating film 49 (multilayer wiring layer) that constitutes the second semiconductor chip. It may be arranged in the structure group formation region 35 (on the lower side in FIG. 7A), or on the side of the interlayer insulating film 39 (multilayer wiring layer) forming the first semiconductor chip (in FIG. 7A). May be arranged in the structure group formation region 35 on the upper side of), or may be arranged in the region of the interlayer insulating film 49 (multilayer wiring layer) forming the second semiconductor chip (the region outside the structure group formation region 35, The region may be a structure group formation region.), or a region of the interlayer insulating film 39 (multilayer wiring layer) forming the first semiconductor chip (a region outside the structure group formation region 35, This region becomes the structure group formation region.). The first structure group 1-13 and the second structure group 2-13 may have different wavelength selectivity. By arranging the first structure group 1-13 and the second structure group 2-13 as described above, propagation of the light L of hot carrier emission generated in the MOS transistor Tr9 can be suppressed.

As shown in FIG. 17, in the first structure group 1-13, for example, a silicon oxide film 504 is laminated on a silicon nitride film 503 having a different film thickness. The film thickness of the silicon nitride film 503 is larger than that of the silicon oxide film 504. In the first structure group 1-13, a silicon nitride film and a silicon oxide film, which are materials having different reflection/refractive indexes from each other, are periodically arranged in this order.

On the other hand, in the first structure group 2-13, for example, the silicon oxide film 502 is laminated on the silicon nitride film 501 having a different film thickness, but the silicon nitride film 501 has a film thickness of the silicon oxide film 504. Smaller than thickness. In the second structure group 2-13, a silicon nitride film and a silicon oxide film, which are materials having different reflection/refractive indexes from each other, are periodically arranged in this order. The first structure group 1-13 and the second structure group 2-13 have a relationship between the film thickness of the silicon nitride and the film thickness of the silicon oxide film (the film thickness of the silicon nitride and the film thickness of the silicon oxide film. Film thickness difference).

When the first structure group and the second structure group are laminated bodies, the material, the film thickness, the pitch width, and the period are parameters. An experiment (simulation) was performed using the film thickness and the period as parameters. Experimental conditions (simulation conditions) and experimental simulation results are shown in FIGS. The material used was a silicon nitride film or a silicon oxide film. The wavelength band typically used was 960 to 1040 nm.

First, a description will be given with reference to FIG. Under the condition 1, the first structure group 1-14 is formed in 5 cycles with a repeating unit including a SiN layer 501 having a film thickness of 10 nm and a SiO ₂ layer 502 having a film thickness of 90 nm stacked thereon. The structure group 2-14 was formed in 5 cycles with a repeating unit including a SiN layer 501 having a thickness of 10 nm and a SiO ₂ layer 502 having a thickness of 90 nm stacked.

Under the condition 2, the first structure group 1-14 is formed in 5 cycles with the repeating unit including the SiO ₂ layer 504 having a film thickness of 10 nm stacked on the SiN layer 503 having a film thickness of 90 nm. The structure group 2-14 was formed in 5 cycles with a repeating unit including a SiN layer 503 having a thickness of 90 nm and a SiO ₂ layer 504 having a thickness of 10 nm stacked.

Under the condition 3, the first structure group 1-14 is formed in 5 cycles with a repeating unit of a SiO ₂ layer 504 having a film thickness of 10 nm stacked on the SiN layer 503 having a film thickness of 90 nm. The structure group 2-14 was formed in 5 cycles with a repeating unit including a SiN layer 501 having a thickness of 10 nm and a SiO ₂ layer 502 having a thickness of 90 nm stacked.

As shown in FIG. 19, as in Conditions 1 and 2, the first structure group 1-14 and the second structure group 2-14 have a single cycle (the same cycle and the same laminated structure). At this time, there is a wavelength band having a high transmittance, but as in Condition 3, the first structure group 1-14 and the second structure group 2-14 have a plurality of cycles (different cycles and different laminated configurations. ), the transmittance can be suppressed to be small.

This will be described with reference to FIG. Under the condition 4, the first structure group 1-16 is formed in 5 cycles with a repeating unit including a SiN layer 501 having a film thickness of 20 nm and an SiO ₂ layer 502 having a film thickness of 80 nm stacked thereon. The structure group 2-16 was formed in five cycles with a repeating unit including a SiN layer 501 having a film thickness of 20 nm and an SiO ₂ layer 502 having a film thickness of 80 nm stacked thereon.

Under the condition 5, the first structure group 1-16 is formed in 5 cycles with a repeating unit including a SiN layer 503 having a film thickness of 80 nm and a SiO ₂ layer 504 having a film thickness of 20 nm stacked thereon. The structure group 2-16 was formed in 5 cycles with a repeating unit including a SiO ₂ layer 504 having a thickness of 20 nm stacked on the SiN layer 503 having a thickness of 80 nm.

Under the condition 6, the first structure group 1-16 is formed in 5 cycles with a repeating unit including a SiN layer 503 having a film thickness of 80 nm and a SiO ₂ layer 504 having a film thickness of 20 nm stacked thereon. The structure group 2-16 was formed in five cycles with a repeating unit including a SiN layer 501 having a film thickness of 20 nm and an SiO ₂ layer 502 having a film thickness of 80 nm stacked thereon.

As shown in FIG. 21, as in Conditions 4 and 5, the first structure group 1-16 and the second structure group 2-16 have a single cycle (the same cycle and the same laminated structure). At this time, there is a wavelength band having a high transmittance, but as in Condition 6, the first structure group 1-16 and the second structure group 2-16 have a plurality of cycles (different cycles and different laminated configurations. ), the transmittance can be suppressed to be small.

A description will be given with reference to FIG. Under the condition 7, the first structure group 1-18 is formed in 5 cycles with the repeating unit including the Si ₂ N layer 501 having a film thickness of 30 nm and the SiO ₂ layer 502 having a film thickness of 70 nm stacked thereon. The structure group 2-18 was formed in 5 cycles with a repeating unit including a SiN layer 501 having a thickness of 30 nm and a SiO ₂ layer 502 having a thickness of 70 nm stacked thereon.

Under the condition 8, the first structure group 1-18 is formed in 5 cycles with a repeating unit including a SiN layer 503 having a film thickness of 70 nm and a SiO ₂ layer 504 having a film thickness of 30 nm stacked thereon. The structure group 2-18 was formed in five cycles with a repeating unit including a SiN layer 503 having a film thickness of 70 nm and a SiO ₂ layer 504 having a film thickness of 30 nm stacked.

Under the condition 9, the first structure group 1-18 is formed in 5 cycles with the repeating unit including the Si ₂ N layer 503 having a film thickness of 70 nm and the SiO ₂ layer 504 having a film thickness of 30 nm stacked thereon. The structure group 2-18 was formed in 5 cycles with a repeating unit including a SiN layer 501 having a thickness of 30 nm and a SiO ₂ layer 502 having a thickness of 70 nm stacked thereon.

As shown in FIG. 23, as in Conditions 7 and 8, the first structure group 1-18 and the second structure group 2-18 have a single cycle (the same cycle and the same laminated structure). At this time, there is a wavelength band with high transmittance, but as in Condition 9, the first structure group 1-18 and the second structure group 2-18 have a plurality of cycles (different cycles and different laminated configurations. ), the transmittance can be suppressed to be small.

A description will be given with reference to FIG. Under the condition 10, the first structure group 1-20 is formed in 5 cycles with a repeating unit including a SiN layer 501 having a film thickness of 40 nm and a SiO ₂ layer 502 having a film thickness of 60 nm stacked thereon. The structure group 2-20 was formed in 5 cycles with a repeating unit including a SiN layer 501 having a film thickness of 40 nm and an SiO ₂ layer 502 having a film thickness of 60 nm stacked thereon.

Under the condition 11, the first structure group 1-20 is formed in 5 cycles with a repeating unit including the SiN layer 503 having a film thickness of 60 nm and the SiO ₂ layer 504 having a film thickness of 40 nm formed thereon. The structure group 2-20 was formed in 5 cycles with a repeating unit including a SiN layer 503 having a film thickness of 60 nm and an SiO ₂ layer 504 having a film thickness of 40 nm stacked thereon.

Under the condition 12, the first structure group 1-20 is formed in 5 cycles with a repeating unit including a SiN layer 503 having a film thickness of 60 nm and a SiO ₂ layer 504 having a film thickness of 40 nm formed thereon. The structure group 2-20 was formed in 5 cycles with a repeating unit including a SiN layer 501 having a film thickness of 40 nm and an SiO ₂ layer 502 having a film thickness of 60 nm stacked thereon.

As shown in FIG. 25, as in Conditions 10 and 11, the first structure group 1-20 and the second structure group 2-20 have a single cycle (the same cycle and the same laminated structure). At this time, there is a wavelength band having a high transmittance, but as in the condition 12, the first structure group 1-20 and the second structure group 2-20 have a plurality of cycles (different cycles and different laminated configurations. ), the transmittance can be suppressed to be small.

The solid-state imaging device according to the second embodiment of the present technology is the solid-state imaging device according to the first embodiment of the present technology described above as long as there is no technical contradiction in addition to the contents described above. The contents described in the section of (4) can be applied as they are.

<4. Third embodiment (example of electronic device)>
The electronic device according to the third embodiment of the present technology is an electronic device in which the solid-state imaging device according to the first embodiment of the present technology is mounted. As a first aspect, the solid-state imaging device according to the first embodiment of the present technology forms an element forming portion in which a plurality of elements are formed, and a wiring that is laminated on the element forming portion and connects the elements. A light receiving element that performs photoelectric conversion, an active element that configures a peripheral circuit arranged around the light receiving element, and a portion between the light receiving element and the active element. And at least two structure groups composed of at least two structures are arranged, and the at least two structure groups include at least one structure group of the at least two structure groups and at least the other structure group. One structure group is different in at least one of a material forming the structure, a width of the structure, a thickness of the structure, and a distance between two adjacent structures. The solid-state image pickup device is formed in the above, and blocks hot carrier light emission generated in the active element from entering the light receiving element.

And the solid-state imaging device of 1st Embodiment which concerns on this technique WHEREIN: The wiring which connects an element formation part in which a some element is formed, and this element formation part, and connects these elements as a 2nd aspect. And a wiring section in which the light receiving element that performs photoelectric conversion, an active element that configures a peripheral circuit arranged around the light receiving element, the light receiving element, and the active element are provided in the element forming section. And a structure group composed of a plurality of structures are arranged between the two, and in the structure group, each material, width and thickness of the plurality of structures and adjacent two in the plurality of structures are arranged. At least one of the distances between the two structures is changed so as to have a predetermined pattern, and the plurality of structures are arranged so that the group of structures emits hot carriers generated in the active device. The solid-state imaging device prevents entry into the light-receiving element.

Furthermore, the electronic device of the third embodiment according to the present technology is an electronic device equipped with the solid-state imaging device of the second embodiment according to the present technology. As a first aspect, the solid-state imaging device according to the second embodiment of the present technology has a pixel region formed on the light incident side of a substrate, in which a plurality of pixels including a photoelectric conversion unit are arranged, and the periphery of the pixel region. And a peripheral circuit portion including an active element, and disposed between the pixel region and the peripheral circuit portion to prevent hot carrier emission generated in the active element from entering the photoelectric conversion portion. At least two structure groups composed of at least two structures, wherein the at least two structure groups are one of the at least two structure groups and at least one of the other structure groups. The structure group is different from each other in at least one of a material forming the structure, a width of the structure, a thickness of the structure, and a distance between two adjacent structures, The first semiconductor chip portion including the first multilayer wiring layer and the pixel region and the second semiconductor chip portion including the second multilayer wiring layer and the peripheral circuit portion are bonded to each other on the substrate. The first semiconductor chip portion and the second semiconductor chip portion are electrically connected by a connection conductor penetrating the first semiconductor chip, and the first semiconductor chip portion and the second semiconductor chip portion are connected to each other. The semiconductor chip section of 1 is a solid-state imaging device in which the first multilayer wiring layer and the second multilayer wiring layer face each other and are bonded together.

And the solid-state imaging device of 2nd Embodiment which concerns on this technique WHEREIN: It is formed in the light-incidence side of the board|substrate, and the pixel area in which the pixel containing a photoelectric conversion part was arranged in multiple numbers, and this pixel area. Of the peripheral circuit portion including the active element, which is formed below the substrate in the depth direction of the substrate, and is disposed between the pixel region and the peripheral circuit portion, and the photoelectric conversion portion for hot carrier light emission generated in the active element. A structure group composed of a plurality of structures for preventing entry into the structure, in the structure group, respective materials, widths and thicknesses of the plurality of structures, and a plurality of structures in the plurality of structures. At least one of the distances between two adjacent structures is changed so as to have a predetermined pattern, and the plurality of structures are arranged, and the substrate includes the first multilayer wiring layer and the pixel region. And a second semiconductor chip portion including a second multilayer wiring layer and the peripheral circuit portion are bonded to each other, and the first semiconductor chip portion and the second semiconductor are included. The chip portion is electrically connected by a connection conductor penetrating the first semiconductor chip, and the first semiconductor chip portion and the second semiconductor chip portion are connected to the first multilayer wiring layer and the second multilayer wiring layer. It is a solid-state imaging device in which a multi-layered wiring layer is opposed to each other and bonded.

<5. Example of use of solid-state imaging device to which the present technology is applied>
FIG. 28 is a diagram illustrating a usage example of the solid-state imaging devices of the first and second embodiments according to the present technology as an image sensor.

The solid-state imaging device of the first and second embodiments described above can be used in various cases for sensing light such as visible light, infrared light, ultraviolet light, and X-rays as described below. it can. That is, as shown in FIG. 28, for example, the field of appreciation for capturing images used for appreciation, the field of transportation, the field of home appliances, the field of medical/healthcare, the field of security, the field of beauty, sports, etc. Use of the solid-state imaging device according to any one of the first and second embodiments for a device (for example, the electronic device according to the third embodiment described above) used in the field of agriculture, the field of agriculture, and the like. You can

Specifically, in the field of appreciation, the first and second embodiments are applied to, for example, a device for capturing an image provided for appreciation, such as a digital camera, a smartphone, or a mobile phone with a camera function. The solid-state imaging device of any one of the embodiments can be used.

In the field of traffic, for example, in-vehicle sensors that photograph the front and rear of the vehicle, the surroundings, the inside of the vehicle, the traveling vehicle and the road are monitored for safe driving such as automatic stop and recognition of the driver's state. The solid-state imaging device according to any one of the first and second embodiments is used for a device used for traffic, such as a monitoring camera that performs a distance measurement, a distance measurement sensor that measures a distance between vehicles, and the like. be able to.

In the field of home electric appliances, for example, a device provided for home electric appliances such as a television receiver, a refrigerator, an air conditioner, etc. for photographing a gesture of a user and performing a device operation according to the gesture. The solid-state imaging device according to any one of the second embodiments can be used.

In the field of medical care/healthcare, for example, the first and second embodiments are applied to devices used for medical care and health care, such as endoscopes and devices for angiography by receiving infrared light. The solid-state imaging device of any one of the embodiments can be used.

In the field of security, for example, a security camera such as a surveillance camera for security use, a camera for person authentication, or the like is used as a device for security, and the solid state of any one of the first and second embodiments. An imaging device can be used.

In the field of beauty, for example, a device used for beauty, such as a skin measuring device for photographing the skin or a microscope for photographing the scalp, is used to implement any one of the first and second embodiments. Any form of solid-state imaging device can be used.

In the field of sports, for example, the solid-state imaging device according to any one of the first and second embodiments is applied to devices used for sports such as action cameras and wearable cameras for sports applications. Can be used.

In the field of agriculture, for example, a device used for agriculture such as a camera for monitoring the condition of fields and crops is used for solid-state imaging according to any one of the first and second embodiments. The device can be used.

Next, a specific example of use of the solid-state imaging device of the first and second embodiments according to the present technology will be described. For example, the solid-state imaging device according to any one of the first to second embodiments described above has, as the solid-state imaging device 101, a camera system such as a digital still camera or a video camera, or an imaging function. The present invention can be applied to all types of electronic devices having an imaging function, such as a mobile phone included in the electronic device. FIG. 29 shows a schematic configuration of the electronic device 102 (camera) as an example. The electronic device 102 is, for example, a video camera capable of shooting a still image or a moving image, and drives the solid-state imaging device 101, an optical system (optical lens) 310a, a shutter device 311, and the solid-state imaging device 101 and the shutter device 311. And a signal processing unit 312.

The optical system 310a guides image light (incident light) from a subject to the pixel portion of the solid-state imaging device 101. The optical system 310a may be composed of a plurality of optical lenses. The shutter device 311 controls a light irradiation period and a light shielding period for the solid-state imaging device 101. The drive unit 313 controls the transfer operation of the solid-state imaging device 101 and the shutter operation of the shutter device 311. The signal processing unit 312 performs various kinds of signal processing on the signal output from the solid-state imaging device 101. The image-processed video signal Dout is stored in a storage medium such as a memory, or is output to a monitor or the like.

<6. Application example to endoscopic surgery system>
The present technology can be applied to various products. For example, the technology according to the present disclosure (this technology) may be applied to an endoscopic surgery system.

FIG. 30 is a diagram illustrating an example of a schematic configuration of an endoscopic surgery system to which the technology (the technology) according to the present disclosure can be applied.

FIG. 30 illustrates a state in which an operator (doctor) 11131 is operating on a patient 11132 on the patient bed 11133 using the endoscopic surgery system 11000. As illustrated, the endoscopic surgery system 11000 includes an endoscope 11100, other surgical instruments 11110 such as a pneumoperitoneum tube 11111 and an energy treatment instrument 11112, and a support arm device 11120 that supports the endoscope 11100. , A cart 11200 on which various devices for endoscopic surgery are mounted.

The endoscope 11100 includes a lens barrel 11101 into which a region having a predetermined length from the distal end is inserted into the body cavity of the patient 11132, and a camera head 11102 connected to the base end of the lens barrel 11101. In the illustrated example, the endoscope 11100 configured as a so-called rigid endoscope having the rigid barrel 11101 is illustrated, but the endoscope 11100 may be configured as a so-called flexible mirror having a flexible barrel. Good.

An opening in which the objective lens is fitted is provided at the tip of the lens barrel 11101. A light source device 11203 is connected to the endoscope 11100, and light generated by the light source device 11203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 11101. It is irradiated toward the observation target in the body cavity of the patient 11132 via the lens. Note that the endoscope 11100 may be a direct-viewing endoscope, or may be a perspective or side-viewing endoscope.

An optical system and an image pickup element are provided inside the camera head 11102, and reflected light (observation light) from an observation target is condensed on the image pickup element by the optical system. The observation light is photoelectrically converted by the imaging element, and an electric signal corresponding to the observation light, that is, an image signal corresponding to the observation image is generated. The image signal is transmitted as RAW data to the camera control unit (CCU: Camera Control Unit) 11201.

The CCU 11201 is configured by a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), and the like, and integrally controls the operations of the endoscope 11100 and the display device 11202. Further, the CCU 11201 receives the image signal from the camera head 11102, and performs various image processing on the image signal, such as development processing (demosaic processing), for displaying an image based on the image signal.

The display device 11202 displays an image based on the image signal subjected to the image processing by the CCU 11201 under the control of the CCU 11201.

The light source device 11203 is composed of a light source such as an LED (Light Emitting Diode), for example, and supplies the endoscope 11100 with irradiation light for capturing an image of a surgical site or the like.

The input device 11204 is an input interface for the endoscopic surgery system 11000. The user can input various kinds of information and instructions to the endoscopic surgery system 11000 via the input device 11204. For example, the user inputs an instruction to change the imaging conditions (type of irradiation light, magnification, focal length, etc.) by the endoscope 11100.

The treatment instrument control device 11205 controls driving of the energy treatment instrument 11112 for cauterization of tissue, incision, sealing of blood vessel, or the like. The pneumoperitoneum device 11206 is used to inflate the body cavity of the patient 11132 through the pneumoperitoneum tube 11111 in order to inflate the body cavity of the patient 11132 for the purpose of securing the visual field by the endoscope 11100 and the working space of the operator. Send in. The recorder 11207 is a device capable of recording various information regarding surgery. The printer 11208 is a device that can print various types of information regarding surgery in various formats such as text, images, or graphs.

The light source device 11203 that supplies the endoscope 11100 with irradiation light for imaging a surgical site can be configured by, for example, an LED, a laser light source, or a white light source configured by a combination thereof. When a white light source is formed by a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high accuracy, so that the light source device 11203 adjusts the white balance of the captured image. It can be carried out. In this case, the laser light from each of the RGB laser light sources is time-divided to irradiate the observation target, and the drive of the image pickup device of the camera head 11102 is controlled in synchronization with the irradiation timing to correspond to each of RGB. It is also possible to take the captured image in a time division manner. According to this method, a color image can be obtained without providing a color filter on the image sensor.

Further, the drive of the light source device 11203 may be controlled so as to change the intensity of the output light at predetermined time intervals. By controlling the driving of the image sensor of the camera head 11102 in synchronization with the timing of changing the intensity of the light to acquire an image in a time-division manner and combining the images, a high dynamic image without so-called blackout and overexposure is obtained. An image of the range can be generated.

Further, the light source device 11203 may be configured to be able to supply light in a predetermined wavelength band corresponding to special light observation. In special light observation, for example, by utilizing the wavelength dependence of absorption of light in body tissues, by irradiating a narrow band of light as compared with the irradiation light (that is, white light) during normal observation, the mucosal surface layer The so-called narrow band imaging (Narrow Band Imaging) is performed in which a predetermined tissue such as a blood vessel is imaged with high contrast. Alternatively, in the special light observation, fluorescence observation in which an image is obtained by fluorescence generated by irradiating the excitation light may be performed. In fluorescence observation, the body tissue is irradiated with excitation light to observe fluorescence from the body tissue (autofluorescence observation), or a reagent such as indocyanine green (ICG) is locally injected into the body tissue and the body tissue is injected. The excitation light corresponding to the fluorescence wavelength of the reagent can be irradiated to obtain a fluorescence image or the like. The light source device 11203 may be configured to be capable of supplying narrowband light and/or excitation light compatible with such special light observation.

31 is a block diagram showing an example of the functional configuration of the camera head 11102 and the CCU 11201 shown in FIG.

The camera head 11102 includes a lens unit 11401, an imaging unit 11402, a driving unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 has a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are communicably connected to each other via a transmission cable 11400.

The lens unit 11401 is an optical system provided at a connecting portion with the lens barrel 11101. The observation light taken from the tip of the lens barrel 11101 is guided to the camera head 11102 and enters the lens unit 11401. The lens unit 11401 is configured by combining a plurality of lenses including a zoom lens and a focus lens.

The image pickup unit 11402 is composed of an image pickup device. The number of image pickup elements forming the image pickup unit 11402 may be one (so-called single-plate type) or plural (so-called multi-plate type). When the image pickup unit 11402 is configured by a multi-plate type, for example, each image pickup element may generate image signals corresponding to RGB, and these may be combined to obtain a color image. Alternatively, the image capturing unit 11402 may be configured to have a pair of image capturing elements for respectively acquiring the image signals for the right eye and the left eye corresponding to 3D (Dimensional) display. The 3D display enables the operator 11131 to more accurately understand the depth of the living tissue in the operation site. When the image pickup unit 11402 is configured by a multi-plate type, a plurality of lens units 11401 may be provided corresponding to each image pickup element.

Further, the imaging unit 11402 does not necessarily have to be provided in the camera head 11102. For example, the imaging unit 11402 may be provided inside the lens barrel 11101 immediately after the objective lens.

The drive unit 11403 is composed of an actuator, and moves the zoom lens and the focus lens of the lens unit 11401 by a predetermined distance along the optical axis under the control of the camera head control unit 11405. Accordingly, the magnification and focus of the image captured by the image capturing unit 11402 can be adjusted appropriately.

The communication unit 11404 is configured by a communication device for transmitting/receiving various information to/from the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 as RAW data to the CCU 11201 via the transmission cable 11400.

Further, the communication unit 11404 receives a control signal for controlling the driving of the camera head 11102 from the CCU 11201, and supplies it to the camera head control unit 11405. The control signal includes, for example, information specifying a frame rate of a captured image, information specifying an exposure value at the time of capturing, and/or information specifying a magnification and a focus of the captured image. Contains information about the condition.

The image capturing conditions such as the frame rate, the exposure value, the magnification, and the focus may be appropriately designated by the user, or may be automatically set by the control unit 11413 of the CCU 11201 based on the acquired image signal. Good. In the latter case, the so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function are mounted on the endoscope 11100.

The camera head controller 11405 controls driving of the camera head 11102 based on a control signal from the CCU 11201 received via the communication unit 11404.

The communication unit 11411 is configured by a communication device for transmitting/receiving various information to/from the camera head 11102. The communication unit 11411 receives the image signal transmitted from the camera head 11102 via the transmission cable 11400.

Further, the communication unit 11411 transmits a control signal for controlling the driving of the camera head 11102 to the camera head 11102. The image signal and the control signal can be transmitted by electric communication, optical communication, or the like.

The image processing unit 11412 performs various types of image processing on the image signal that is the RAW data transmitted from the camera head 11102.

The control unit 11413 performs various controls regarding imaging of a surgical site or the like by the endoscope 11100 and display of a captured image obtained by imaging the surgical site or the like. For example, the control unit 11413 generates a control signal for controlling the driving of the camera head 11102.

Further, the control unit 11413 causes the display device 11202 to display a captured image of the surgical site or the like based on the image signal subjected to the image processing by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image using various image recognition techniques. For example, the control unit 11413 detects a surgical instrument such as forceps, a specific living body part, bleeding, and a mist when the energy treatment instrument 11112 is used, by detecting the shape and color of the edge of the object included in the captured image. Can be recognized. When displaying the captured image on the display device 11202, the control unit 11413 may use the recognition result to superimpose and display various types of surgery support information on the image of the operation unit. By displaying the surgery support information in a superimposed manner and presenting it to the operator 11131, the burden on the operator 11131 can be reduced, and the operator 11131 can reliably proceed with the surgery.

The transmission cable 11400 that connects the camera head 11102 and the CCU 11201 is an electric signal cable compatible with communication of electric signals, an optical fiber compatible with optical communication, or a composite cable of these.

Here, in the illustrated example, wired communication is performed using the transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may be performed wirelessly.

The example of the endoscopic surgery system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to the endoscope 11100, the camera head 11102 (the image capturing unit 11402 thereof), and the like among the configurations described above. Specifically, the solid-state imaging device 111 of the present disclosure can be applied to the imaging unit 10402. By applying the technology according to the present disclosure to the endoscope 11100, the camera head 11102 (the image capturing unit 11402 of the camera head), and the like, it is possible to improve the yield and reduce the manufacturing cost.

Here, the endoscopic surgery system has been described as an example, but the technique according to the present disclosure may be applied to, for example, a microscopic surgery system or the like.

<7. Application to mobiles>
The technology according to the present disclosure (this technology) can be applied to various products. For example, the technology according to the present disclosure is realized as a device mounted on any type of moving body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, and a robot. May be.

FIG. 32 is a block diagram showing a schematic configuration example of a vehicle control system that is an example of a mobile body control system to which the technology according to the present disclosure can be applied.

The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in FIG. 32, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, a vehicle exterior information detection unit 12030, a vehicle interior information detection unit 12040, and an integrated control unit 12050. Further, as a functional configuration of the integrated control unit 12050, a microcomputer 12051, an audio/video output unit 12052, and an in-vehicle network I/F (interface) 12053 are illustrated.

The drive system control unit 12010 controls the operation of devices related to the drive system of the vehicle according to various programs. For example, the drive system control unit 12010 includes a drive force generation device for generating a drive force of a vehicle such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to wheels, and a steering angle of the vehicle. It functions as a steering mechanism for adjusting and a control device such as a braking device for generating a braking force of the vehicle.

The body system control unit 12020 controls operations of various devices mounted on the vehicle body according to various programs. For example, the body system control unit 12020 functions as a keyless entry system, a smart key system, a power window device, or a control device for various lamps such as a head lamp, a back lamp, a brake lamp, a winker, or a fog lamp. In this case, the body system control unit 12020 may receive radio waves or signals of various switches transmitted from a portable device that substitutes for a key. The body system control unit 12020 receives these radio waves or signals and controls the vehicle door lock device, power window device, lamp, and the like.

The vehicle exterior information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, the image pickup unit 12031 is connected to the vehicle exterior information detection unit 12030. The vehicle exterior information detection unit 12030 causes the image capturing unit 12031 to capture an image of the vehicle exterior and receives the captured image. The vehicle exterior information detection unit 12030 may perform object detection processing or distance detection processing such as people, vehicles, obstacles, signs, or characters on the road surface based on the received image.

The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal according to the amount of received light. The imaging unit 12031 can output the electric signal as an image or can output the information as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

The in-vehicle information detection unit 12040 detects in-vehicle information. To the in-vehicle information detection unit 12040, for example, a driver state detection unit 12041 that detects the state of the driver is connected. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 determines the degree of tiredness or concentration of the driver based on the detection information input from the driver state detection unit 12041. It may be calculated or it may be determined whether or not the driver is asleep.

The microcomputer 12051 calculates the control target value of the driving force generation device, the steering mechanism or the braking device based on the information on the inside and outside of the vehicle acquired by the outside information detection unit 12030 or the inside information detection unit 12040, and the drive system control unit. A control command can be output to 12010. For example, the microcomputer 12051 realizes a function of ADAS (Advanced Driver Assistance System) including collision avoidance or impact mitigation of a vehicle, follow-up traveling based on an inter-vehicle distance, vehicle speed maintenance traveling, a vehicle collision warning, a vehicle lane departure warning, and the like. It is possible to perform cooperative control for the purpose.

Further, the microcomputer 12051 controls the driving force generation device, the steering mechanism, the braking device, or the like based on the information around the vehicle acquired by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040, thereby It is possible to perform cooperative control for the purpose of autonomous driving or the like that autonomously travels without depending on the operation.

Further, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 controls the headlamp according to the position of the preceding vehicle or the oncoming vehicle detected by the vehicle exterior information detection unit 12030, and performs cooperative control for the purpose of anti-glare such as switching the high beam to the low beam. It can be carried out.

The audio/video output unit 12052 transmits an output signal of at least one of a sound and an image to an output device capable of visually or audibly notifying information to a passenger of the vehicle or the outside of the vehicle. In the example of FIG. 32, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are illustrated as output devices. The display unit 12062 may include, for example, at least one of an onboard display and a head-up display.

FIG. 33 is a diagram showing an example of the installation position of the imaging unit 12031.

In FIG. 33, the vehicle 12100 has imaging units 12101, 12102, 12103, 12104, 12105 as the imaging unit 12031.

The imaging units 12101, 12102, 12103, 12104, 12105 are provided at positions such as the front nose of the vehicle 12100, the side mirrors, the rear bumper, the back door, and the upper part of the windshield inside the vehicle. The image capturing unit 12101 provided on the front nose and the image capturing unit 12105 provided on the upper part of the windshield in the vehicle interior mainly acquire an image in front of the vehicle 12100. The imaging units 12102 and 12103 included in the side mirrors mainly acquire images of the side of the vehicle 12100. The imaging unit 12104 provided in the rear bumper or the back door mainly acquires an image behind the vehicle 12100. The front images acquired by the image capturing units 12101 and 12105 are mainly used for detecting a preceding vehicle or a pedestrian, an obstacle, a traffic signal, a traffic sign, a lane, or the like.

Note that FIG. 33 shows an example of the shooting range of the imaging units 12101 to 12104. The imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, the imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, and the imaging range 12114 indicates The imaging range of the imaging part 12104 provided in a rear bumper or a back door is shown. For example, by overlaying the image data captured by the image capturing units 12101 to 12104, a bird's-eye view image of the vehicle 12100 viewed from above can be obtained.

At least one of the image capturing units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the image capturing units 12101 to 12104 may be a stereo camera including a plurality of image capturing elements, or may be an image capturing element having pixels for phase difference detection.

For example, the microcomputer 12051, based on the distance information obtained from the imaging units 12101 to 12104, the distance to each three-dimensional object within the imaging range 12111 to 12114 and the temporal change of this distance (relative speed with respect to the vehicle 12100). In particular, the closest three-dimensional object on the traveling path of the vehicle 12100, which travels in the substantially same direction as the vehicle 12100 at a predetermined speed (for example, 0 km/h or more), can be extracted as a preceding vehicle by determining it can. Further, the microcomputer 12051 can set an inter-vehicle distance to be secured in advance before the preceding vehicle, and can perform automatic brake control (including follow-up stop control), automatic acceleration control (including follow-up start control), and the like. In this way, it is possible to perform cooperative control for the purpose of autonomous driving or the like that autonomously travels without depending on the operation of the driver.

For example, the microcomputer 12051 uses the distance information obtained from the image capturing units 12101 to 12104 to convert three-dimensional object data regarding a three-dimensional object into another three-dimensional object such as a two-wheeled vehicle, an ordinary vehicle, a large vehicle, a pedestrian, and a utility pole. It can be classified and extracted and used for automatic avoidance of obstacles. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles visible to the driver of the vehicle 12100 and obstacles difficult to see. Then, the microcomputer 12051 determines the collision risk indicating the risk of collision with each obstacle, and when the collision risk is equal to or more than the set value and there is a possibility of collision, the microcomputer 12051 outputs the audio through the audio speaker 12061 and the display unit 12062. A driver can be assisted for collision avoidance by outputting an alarm to the driver and performing forced deceleration or avoidance steering via the drive system control unit 12010.

At least one of the image capturing units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize the pedestrian by determining whether or not the pedestrian is present in the images captured by the imaging units 12101 to 12104. To recognize such a pedestrian, for example, a procedure of extracting a feature point in an image captured by the image capturing units 12101 to 12104 as an infrared camera and a pattern matching process on a series of feature points indicating the contour of an object are performed to determine whether the pedestrian is a pedestrian. It is performed by the procedure of determining. When the microcomputer 12051 determines that a pedestrian exists in the images captured by the imaging units 12101 to 12104 and recognizes the pedestrian, the audio image output unit 12052 causes the recognized pedestrian to have a rectangular contour line for emphasis. The display unit 12062 is controlled so as to superimpose and display. In addition, the audio image output unit 12052 may control the display unit 12062 to display an icon indicating a pedestrian or the like at a desired position.

The example of the vehicle control system to which the technology (the technology) according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to, for example, the imaging unit 12031 or the like among the configurations described above. Specifically, the solid-state imaging device 111 of the present disclosure can be applied to the imaging unit 12031. By applying the technology according to the present disclosure to the imaging unit 12031, it is possible to improve the yield and reduce the manufacturing cost.

The present technology is not limited to the embodiments and application examples described above, and various modifications can be made without departing from the gist of the present technology.

Further, the effects described in the present specification are merely examples and are not limited, and there may be other effects.

Further, the present technology may also be configured as below.
[1]
An element forming portion in which a plurality of elements are formed,
A wiring portion that is laminated on the element forming portion and in which wiring for connecting the elements is formed,
In the element formation part,
A light receiving element that performs photoelectric conversion,
An active element that constitutes a peripheral circuit arranged around the light receiving element, and
A structure group formation region is formed between the light receiving element and the active element,
The structure group formation region includes at least a first structure group having a plurality of first structures and a second structure group having a plurality of second structures,
A solid-state imaging device, wherein a distance between at least one adjacent first structures and a distance between at least one adjacent second structures are different.
[2]
The solid-state imaging device according to [1], wherein the wavelength selectivity of the first structure group and the wavelength selectivity of the second structure group are different from each other.
[3]
In [1] or [2], the width of at least one first structure of the plurality of first structures and the width of at least one second structure of the plurality of second structures are different. The solid-state imaging device described.
[4]
The first structure group is a laminated body configured by using the first structure as a repeating unit,
The second structure group is a laminated body configured by using the second structure as a repeating unit,
At least one adjacent first structure is different from each other in thickness of the first structure and/or material constituting the first structure,
The solid-state imaging according to any one of [1] to [3], wherein at least one adjacent second structure is different in the thickness of the second structure and/or the material forming the first structure. apparatus.
[5]
A pixel region formed on the light incident side of the substrate, in which a plurality of pixels including a photoelectric conversion unit are arranged;
A peripheral circuit portion formed around the pixel region and including an active element;
A structure having at least a first structure group having a plurality of first structures and a second structure group having a plurality of second structures between the pixel region and the peripheral circuit unit. A group formation area is formed,
The substrate includes a first semiconductor chip portion including a first multilayer wiring layer and the pixel region;
A second multilayer wiring layer and a second semiconductor chip portion including the peripheral circuit portion are bonded together,
The first semiconductor chip portion and the second semiconductor chip portion are electrically connected by a connection conductor that penetrates the first semiconductor chip portion,
The solid-state imaging device, wherein the first semiconductor chip section and the second semiconductor chip section are bonded together with the first multilayer wiring layer and the second multilayer wiring layer facing each other.
[6]
The solid-state imaging device according to [5], wherein the wavelength selectivity of the first structure group and the wavelength selectivity of the second structure group are different from each other.
[7]
The solid-state imaging device according to [5] or [6], wherein a distance between at least one adjacent first structures and a distance between at least one adjacent second structures are different.
[8]
The width of at least one first structure of the plurality of first structures and the width of at least one second structure of the plurality of second structures are different, [5] to [7] The solid-state imaging device according to any one of claims.
[9]
The first structure group is a laminated body configured by using the first structure as a repeating unit,
The second structure group is a laminated body configured by using the second structure as a repeating unit,
At least one adjacent first structure is different from each other in thickness of the first structure and/or material constituting the first structure,
The solid-state imaging according to any one of [5] to [8], wherein at least one adjacent second structure is different in the thickness of the second structure and/or the material forming the first structure. apparatus.
[10]
An electronic device on which the solid-state imaging device according to any one of [1] to [9] is mounted.

Furthermore, the present technology may also be configured as below.
[11]
An element forming portion in which a plurality of elements are formed,
A wiring portion that is laminated on the element forming portion and in which wiring for connecting the elements is formed,
In the element formation part,
A light receiving element that performs photoelectric conversion,
An active element forming a peripheral circuit arranged around the light receiving element;
At least two structure groups composed of at least two structures are arranged between the light receiving element and the active element,
In the at least two structure groups, one of the at least two structure groups and the other at least one structure group are made of a material constituting the structure, a width of the structure, At least one of the thickness of the structure and the distance between two adjacent structures is formed differently to prevent hot carrier emission generated in the active element from entering the light receiving element. A solid-state imaging device.
[12]
The solid-state imaging device according to [11], wherein the wavelength selectivity of the one structure group and the wavelength selectivity of the at least one other structure group are different from each other.
[13]
A distance between at least one adjacent two structures of the one structure group and a distance between at least one adjacent two structures of the other at least one structure group are different. The solid-state imaging device according to [11] or [12].
[14]
The width of at least one structure of at least two structures forming the one structure group, and at least one structure of at least two structures forming the other at least one structure group The solid-state imaging device according to any one of [11] to [13], which has a different width.
[15]
The one structure group is a laminated body in which a first structure and a second structure laminated on the first structure are configured as repeating units,
The other at least one structure group is a laminated body in which a third structure and a fourth structure laminated on the third structure are constituted as repeating units,
The material of which the one structure group and the at least one other structure group of the other constitute each of the one structure and the fourth structure, and the thickness of each of the one structure and the fourth structure. The solid-state imaging device according to any one of [11] to [14], which is formed to be different in at least one of the above.
[16]
An element forming portion in which a plurality of elements are formed,
A wiring portion that is laminated on the element forming portion and in which wiring for connecting the elements is formed,
In the element forming part,
A light receiving element that performs photoelectric conversion,
An active element forming a peripheral circuit arranged around the light receiving element;
A structure group composed of a plurality of structures is arranged between the light receiving element and the active element,
In the structure group, at least one of a material, a width and a thickness of each of the plurality of structures and a distance between two adjacent structures in the plurality of structures is changed to have a predetermined pattern. Then, the plurality of structures are arranged,
A solid-state imaging device, wherein the structure group prevents hot carrier light emission generated in the active element from entering the light receiving element.
[17]
The solid-state imaging device according to [16], wherein the pattern is at least one of a random pattern, an alternating pattern, a periodic pattern, a block pattern, and a gradual pattern.
[18]
The solid-state imaging device according to [16], wherein the plurality of structures are arranged such that the distance between two adjacent structures in the plurality of structures changes so as to have a gradual pattern.
[19]
A pixel region formed on the light incident side of the substrate, in which a plurality of pixels including a photoelectric conversion unit are arranged;
A peripheral circuit portion formed around the pixel region and including an active element;
At least two structures, which are arranged between the pixel region and the peripheral circuit part, and which prevent at least two structures from preventing hot carrier emission generated in the active element from entering the photoelectric conversion part. And a group of objects,
The at least two structure groups, one of the at least two structure groups and the other at least one structure group are made of a material constituting the structure, a width of the structure, Formed differently in at least one of the thickness of the structure and the distance between two adjacent structures,
The substrate includes a first semiconductor chip portion including a first multilayer wiring layer and the pixel region;
A second multilayer wiring layer and a second semiconductor chip portion including the peripheral circuit portion are bonded together,
The first semiconductor chip portion and the second semiconductor chip portion are electrically connected by a connection conductor that penetrates the first semiconductor chip portion,
The solid-state imaging device, wherein the first semiconductor chip section and the second semiconductor chip section are bonded together with the first multilayer wiring layer and the second multilayer wiring layer facing each other.
[20]
The solid-state imaging device according to [19], wherein the wavelength selectivity of the one structure group is different from the wavelength selectivity of the at least one other structure group.
[21]
A distance between at least one adjacent two structures of the one structure group and a distance between at least one adjacent two structures of the other at least one structure group are different. The solid-state imaging device according to [19] or [20].
[22]
The width of at least one structure of at least two structures forming the one structure group, and at least one structure of at least two structures forming the other at least one structure group The solid-state imaging device according to any one of [19] to [21], which has a different width.
[23]
The one structure group is a laminated body in which a first structure and a second structure laminated on the first structure are configured as repeating units,
The other at least one structure group is a laminated body in which a third structure and a fourth structure laminated on the third structure are constituted as repeating units,
The material of which the one structure group and the at least one other structure group of the other constitute each of the one structure and the fourth structure, and the thickness of each of the one structure and the fourth structure. The solid-state imaging device according to any one of [19] to [22], which is formed differently in at least one of the two.
[24]
A pixel region formed on the light incident side of the substrate, in which a plurality of pixels including a photoelectric conversion unit are arranged;
A peripheral circuit portion formed around the pixel region and including an active element;
A structure group composed of a plurality of structures, which is disposed between the pixel region and the peripheral circuit section and prevents hot carrier emission generated in the active element from entering the photoelectric conversion section, Have
In the structure group, at least one of a material, a width and a thickness of each of the plurality of structures and a distance between two adjacent structures in the plurality of structures is changed to have a predetermined pattern. Then, the plurality of structures are arranged,
The substrate includes a first semiconductor chip portion including a first multilayer wiring layer and the pixel region;
A second multilayer wiring layer and a second semiconductor chip portion including the peripheral circuit portion are bonded together,
The first semiconductor chip portion and the second semiconductor chip portion are electrically connected by a connection conductor penetrating the first semiconductor chip portion,
The solid-state imaging device, wherein the first semiconductor chip section and the second semiconductor chip section are bonded together with the first multilayer wiring layer and the second multilayer wiring layer facing each other.
[25]
The solid-state imaging device according to [24], wherein the pattern is at least one of a random pattern, an alternating pattern, a periodic pattern, a block pattern, and a gradual pattern.
[26]
The solid-state imaging device according to [24], wherein the plurality of structures are arranged such that a distance between two adjacent structures in the plurality of structures gradually changes so as to have a pattern.
[27]
An electronic device equipped with the solid-state imaging device according to any one of [11] to [26].

1-3a, 1-3b, 1-4a, 1-5a, 1-6a, 1-7a, 1-8a, 1-9a, 1-10a, 1-11a, 2-3a, 2-3b, 2- 6a, 2-11a... a group of structures,
11 (11a, 11b, 11c, 11E, 11F, 11G, 11H, 11M, 11cN), 86 (86a)... Solid-state imaging device,
35 (35E, 35F, 35G, 35H, 35M, 35N)... Structure group formation region.

Claims (11)

An element forming portion in which a plurality of elements are formed,
A wiring portion that is laminated on the element forming portion and in which wiring for connecting the elements is formed,
In the element formation part,
A light receiving element that performs photoelectric conversion,
An active element that constitutes a peripheral circuit arranged around the light receiving element, and
A structure group formation region is formed between the light receiving element and the active element,
The structure group formation region includes at least a first structure group having a plurality of first structures and a second structure group having a plurality of second structures,
A solid-state imaging device, wherein a distance between at least one adjacent first structures and a distance between at least one adjacent second structures are different. The solid-state imaging device according to claim 1, wherein the wavelength selectivity of the first structure group and the wavelength selectivity of the second structure group are different from each other. The solid-state imaging according to claim 1, wherein a width of at least one first structure of the plurality of first structures and a width of at least one second structure of the plurality of second structures are different. apparatus. The first structure group is a laminated body configured by using the first structure as a repeating unit,
The second structure group is a laminated body configured by using the second structure as a repeating unit,
At least one adjacent first structure is different from each other in thickness of the first structure and/or material constituting the first structure,
The solid-state imaging device according to claim 1, wherein at least one adjacent second structure is different in the thickness of the second structure and/or the material forming the first structure. A pixel region formed on the light incident side of the substrate, in which a plurality of pixels including a photoelectric conversion unit are arranged;
A peripheral circuit portion formed around the pixel region and including an active element;
A structure having at least a first structure group having a plurality of first structures and a second structure group having a plurality of second structures between the pixel region and the peripheral circuit unit. A group formation area is formed,
The substrate includes a first semiconductor chip portion including a first multilayer wiring layer and the pixel region;
A second multilayer wiring layer and a second semiconductor chip portion including the peripheral circuit portion are bonded together,
The first semiconductor chip portion and the second semiconductor chip portion are electrically connected by a connection conductor that penetrates the first semiconductor chip portion,
The solid-state imaging device, wherein the first semiconductor chip section and the second semiconductor chip section are bonded together with the first multilayer wiring layer and the second multilayer wiring layer facing each other. The solid-state imaging device according to claim 5, wherein the wavelength selectivity of the first structure group and the wavelength selectivity of the second structure group are different from each other. The solid-state imaging device according to claim 5, wherein a distance between at least one adjacent first structures and a distance between at least one adjacent second structures are different from each other. The solid-state imaging according to claim 5, wherein a width of at least one first structure of the plurality of first structures and a width of at least one second structure of the plurality of second structures are different. apparatus. The first structure group is a laminated body configured by using the first structure as a repeating unit,
The second structure group is a laminated body configured by using the second structure as a repeating unit,
At least one adjacent first structure is different from each other in thickness of the first structure and/or material constituting the first structure,
The solid-state imaging device according to claim 5, wherein at least one adjacent second structure is different in the thickness of the second structure and/or the material forming the first structure. An electronic device on which the solid-state imaging device according to claim 1 is mounted. An electronic device on which the solid-state imaging device according to claim 5 is mounted.