JP2020100515A5 - - Google Patents
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- JP2020100515A5 JP2020100515A5 JP2018237641A JP2018237641A JP2020100515A5 JP 2020100515 A5 JP2020100515 A5 JP 2020100515A5 JP 2018237641 A JP2018237641 A JP 2018237641A JP 2018237641 A JP2018237641 A JP 2018237641A JP 2020100515 A5 JP2020100515 A5 JP 2020100515A5
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- layer
- single crystal
- natural
- transparent layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000002844 melting Methods 0.000 description 4
- 230000001629 suppression Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000116 mitigating Effects 0.000 description 1
- 239000006060 molten glass Substances 0.000 description 1
- 229910052904 quartz Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000002522 swelling Effects 0.000 description 1
Description
アーク溶融を行ったルツボの最表面にはブラウンリングが発生しやすく、結晶引き上げ中はブラウンリングの成長と融解が同時に起きており、ブラウンリングが剥離すると単結晶中に転位が発生する確率が高くなる。しかし、本発明による石英ガラスルツボは、ルツボ内面にシール層が形成されており、シール層中に気泡があることでシール層の溶損が進みやすいので、融液の湯面振動と共にブラウンリングの成長を抑制することができ、これにより転位発生率を低減することができる。
Brown rings are likely to occur on the outermost surface of the crucible that has undergone arc melting, and the growth and melting of the brown rings occur at the same time during crystal pulling, and when the brown rings are peeled off, there is a high probability that dislocations will occur in the single crystal. Become. However, in the quartz glass crucible according to the present invention, a seal layer is formed on the inner surface of the crucible, and the seal layer is likely to be melted and damaged due to air bubbles in the seal layer. Growth can be suppressed, which can reduce the rate of dislocation occurrence.
４層目の天然気泡層１４は、多数の気泡を含有する天然石英溶融ガラス層である。天然気泡層１４は、ルツボの外側に配置されたヒーターからの輻射熱を分散させてルツボ内のシリコン融液をできるだけ均一に加熱するために設けられている。天然気泡層１４は、透明層に比べて熱容量が大きいことから、シリコン融液の温度を安定的に制御することができる。また、ルツボの断熱性を向上させることができ、ルツボの内面の温度が高くなりすぎることによるルツボ内面の垂れ、ブラウンリングの発生・成長、ルツボの溶損による単結晶の酸素濃度の増加を抑えることができる。さらに、ルツボの昇降やヒーターパワーオン、単結晶のショルダー部から直胴部へのプロセス移行などの際にヒーターから受ける熱の急激な変化を緩和してルツボ内面の劣化を抑制し、シリコン単結晶中に取り込まれる酸素の急激な変化を抑制することができる。天然気泡層１４はルツボの側壁部１ａから底部１ｂまでのルツボ全体に設けられていることが好ましい。
The fourth natural cell layer 14 is a natural quartz molten glass layer containing a large number of bubbles. The natural cell layer 14 is provided to disperse the radiant heat from the heater arranged outside the crucible and heat the silicon melt in the crucible as uniformly as possible. Since the natural cell layer 14 has a larger heat capacity than the transparent layer, the temperature of the silicon melt can be stably controlled. In addition, the heat insulating property of the crucible can be improved, and the drooping of the inner surface of the crucible due to the temperature of the inner surface of the crucible becoming too high, the generation / growth of brown rings, and the increase in the oxygen concentration of the single crystal due to the melting damage of the crucible are suppressed. be able to. Furthermore, it suppresses the deterioration of the inner surface of the crucible by mitigating the sudden change in heat received from the heater when raising and lowering the crucible, powering on the heater, and shifting the process from the shoulder part to the straight body part of the single crystal, and the silicon single crystal. It is possible to suppress abrupt changes in oxygen taken into the inside. The natural cell layer 14 is preferably provided on the entire crucible from the side wall portion 1a to the bottom portion 1b of the crucible.
以上説明したように、本実施形態による石英ガラスルツボ１は、ルツボの内面側から、シール層１１、合成透明層１２、天然透明層１３、天然気泡層１４及び結晶硬化層１５が順に設けられた構造を有し、シール層１１の気泡含有率が合成透明層１２よりも高く且つ天然気泡層１４よりも低いので、シリコン融液の湯面振動を抑制しながらルツボの内面の溶損を促進させることができる。したがって、ルツボの内面が結晶化して剥離することによる単結晶の有転位化を防止することができ、これにより単結晶の転位発生率を低減することができる。またシール層１１の厚さが０．１ｍｍ以上２．０ｍｍ以下であり、シリコン単結晶の直胴部育成工程を開始する前にシール層が溶けて消滅し、合成透明層が露出してルツボの内面を構成するので、単結晶の有転位化と不純物汚染を防止することができる。
As described above, in the quartz glass crucible 1 according to the present embodiment, the seal layer 11, the synthetic transparent layer 12, the natural transparent layer 13, the natural bubble layer 14, and the crystal hardening layer 15 are provided in this order from the inner surface side of the crucible. Since it has a structure and the bubble content of the seal layer 11 is higher than that of the synthetic transparent layer 12 and lower than that of the natural cell layer 14, the melting damage of the inner surface of the crucible is promoted while suppressing the surface vibration of the silicon melt. Can be Therefore, it is possible to prevent dislocations of the single crystal due to the inner surface of the crucible crystallizing and peeling off, and thereby reducing the dislocation occurrence rate of the single crystal. Further, the thickness of the seal layer 11 is 0.1 mm or more and 2.0 mm or less, and the seal layer melts and disappears before starting the straight body portion growing step of the silicon single crystal, and the synthetic transparent layer is exposed and the crucible is exposed. Since it constitutes an inner surface, it is possible to prevent dislocation of a single crystal and contamination with impurities.
以上の結果から、コーナー部最大肉厚比率が１．１以上であり、側壁部及び底部の合成透明層の厚さがコーナー部よりも小さいサンプルＥ６、Ｅ８では、結晶歩留まりが８０％以上となり、天然透明層の露出やルツボの変形（スウェリング）に起因する有転位化を抑制できることが分かった。
From the above results, in the samples E6 and E8 in which the maximum wall thickness ratio of the corner portion is 1.1 or more and the thickness of the synthetic transparent layer at the side wall portion and the bottom portion is smaller than that of the corner portion, the crystal yield is 80% or more. It was found that dislocation formation due to exposure of the natural transparent layer and deformation (swelling) of the crucible can be suppressed.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018237641A JP7024700B2 (en) | 2018-12-19 | 2018-12-19 | Quartz glass crucible |
| KR1020190169722A KR102342039B1 (en) | 2018-12-19 | 2019-12-18 | Quartz glass crucible |
| CN201911316941.5A CN111334852B (en) | 2018-12-19 | 2019-12-19 | Quartz glass crucible |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018237641A JP7024700B2 (en) | 2018-12-19 | 2018-12-19 | Quartz glass crucible |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020100515A JP2020100515A (en) | 2020-07-02 |
| JP2020100515A5 true JP2020100515A5 (en) | 2021-03-18 |
| JP7024700B2 JP7024700B2 (en) | 2022-02-24 |
Family
ID=71140984
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018237641A Active JP7024700B2 (en) | 2018-12-19 | 2018-12-19 | Quartz glass crucible |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7024700B2 (en) |
| KR (1) | KR102342039B1 (en) |
| CN (1) | CN111334852B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111996589A (en) * | 2020-08-31 | 2020-11-27 | 宁夏富乐德石英材料有限公司 | Quartz crucible for inhibiting liquid level jitter of seeding silicon and preparation method thereof |
| DE112021006516T5 (en) * | 2020-12-18 | 2023-10-19 | Sumco Corporation | QUARTZ GLASS CRUBLE, PRODUCTION PROCESS THEREOF AND PRODUCTION PROCESS FOR SILICON SINGLE CRYSTAL |
| WO2023204146A1 (en) * | 2022-04-18 | 2023-10-26 | 信越石英株式会社 | Quartz glass crucible for pulling up monocrystalline silicon ingot |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3026088B2 (en) * | 1989-08-30 | 2000-03-27 | 三菱マテリアル株式会社 | Quartz crucible for pulling silicon single crystal |
| JPH05252157A (en) | 1992-03-06 | 1993-09-28 | Matsushita Electric Ind Co Ltd | Call controller |
| JP3136533B2 (en) | 1995-04-28 | 2001-02-19 | 三菱マテリアルクォーツ株式会社 | Quartz crucible for pulling silicon single crystal |
| JP4447738B2 (en) | 2000-05-31 | 2010-04-07 | 信越石英株式会社 | Method for producing a quartz glass crucible having a multilayer structure |
| EP1632592B1 (en) * | 2003-05-01 | 2012-06-20 | Shin-Etsu Quartz Products Co., Ltd. | Quartz glass crucible for pulling up silicon single crystal and method for manufacture thereof |
| JP4678667B2 (en) | 2004-06-07 | 2011-04-27 | 信越石英株式会社 | Silica glass crucible for pulling silicon single crystal and method for producing the same |
| JP4789437B2 (en) * | 2004-07-16 | 2011-10-12 | 信越石英株式会社 | Silica glass crucible for pulling silicon single crystal and method for producing the same |
| KR100847500B1 (en) | 2006-03-30 | 2008-07-22 | 코바렌트 마테리얼 가부시키가이샤 | Silica glass crucible |
| JP4798714B2 (en) | 2007-03-28 | 2011-10-19 | コバレントマテリアル株式会社 | Silica glass crucible for pulling silicon single crystals |
| US8272234B2 (en) | 2008-12-19 | 2012-09-25 | Heraeus Shin-Etsu America, Inc. | Silica crucible with pure and bubble free inner crucible layer and method of making the same |
| KR101357740B1 (en) | 2009-07-31 | 2014-02-03 | 쟈판 스파 쿼츠 가부시키가이샤 | Silica glass crucible for pulling of silicon single crystal |
| JP5685894B2 (en) * | 2010-11-05 | 2015-03-18 | 信越半導体株式会社 | Quartz glass crucible, method for producing the same, and method for producing silicon single crystal |
| JP5500689B2 (en) * | 2010-12-03 | 2014-05-21 | 株式会社Ｓｕｍｃｏ | Silica glass crucible |
| KR101293526B1 (en) * | 2011-01-28 | 2013-08-06 | 쟈판 스파 쿼츠 가부시키가이샤 | Vitreous silica crucible for pulling silicon single crystal, and method for manufacturing the same |
| JP6351534B2 (en) | 2015-04-01 | 2018-07-04 | クアーズテック株式会社 | Silica glass crucible for pulling silicon single crystals |
| CN204918839U (en) * | 2015-09-11 | 2015-12-30 | 江西中昱新材料科技有限公司 | Quartz crucible |
| CN108531978B (en) * | 2018-04-09 | 2021-01-01 | 江阴龙源石英制品有限公司 | 5-layer composite quartz crucible for large-scale integrated circuit and preparation method and surface treatment method thereof |
-
2018
- 2018-12-19 JP JP2018237641A patent/JP7024700B2/en active Active
-
2019
- 2019-12-18 KR KR1020190169722A patent/KR102342039B1/en active IP Right Grant
- 2019-12-19 CN CN201911316941.5A patent/CN111334852B/en active Active
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