JP2020088393A - 高耐電圧のrcスナバ回路 - Google Patents
高耐電圧のrcスナバ回路 Download PDFInfo
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- 239000003990 capacitor Substances 0.000 claims abstract description 99
- 239000004065 semiconductor Substances 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 238000001465 metallisation Methods 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 238000010292 electrical insulation Methods 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 abstract description 7
- 230000010354 integration Effects 0.000 abstract description 4
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- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
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- H01L27/0676—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type comprising combinations of diodes, or capacitors or resistors
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
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- H01L27/0788—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type comprising combinations of diodes or capacitors or resistors
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- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
- H01L29/945—Trench capacitors
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- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
- H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
- H02H7/125—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for rectifiers
- H02H7/1252—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for rectifiers responsive to overvoltage in input or output, e.g. by load dump
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- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/001—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection limiting speed of change of electric quantities, e.g. soft switching on or off
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
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- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/042—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage comprising means to limit the absorbed power or indicate damaged over-voltage protection device
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- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
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- H02H9/043—Protection of over-voltage protection device by short-circuiting
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
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Abstract
Description
2 縦型コンデンサーのウェル
3 横型コンデンサーのウェル
4 誘電体層
5 導電性材料
6 メタライゼーション
7 コンタクト電極
8 p+型コンタクト又はn+型コンタクト
9 裏側メタライゼーション
10 n+型ドープされるウェル
11 エッジ終端
Claims (9)
- 半導体基板(1)に一体的に組み込まれたRCスナバ回路によって形成される電気回路装置であって、
前記RCスナバ回路の第1のコンデンサー(Cvert)及び抵抗(R)は、前記半導体基板(1)の第1のドープ型の半導体領域において縦方向に形成され、
少なくとも1つの更なるコンデンサー(Clat)は、前記第1のコンデンサー(Cvert)と直列に接続され、
前記更なるコンデンサー(Clat)は、前記第1のドープ型の前記半導体領域に隣接する第2のドープ型の半導体領域において、前記第1のコンデンサーに対して横方向に組み込まれ、前記ドープ型が異なることによって、前記更なるコンデンサー(Clat)は、前記第1のドープ型の前記半導体領域から電気的に絶縁される、電気回路装置。 - 前記第2のドープ型の前記半導体領域は、前記第1のドープ型の前記半導体領域におけるウェル領域(3)として形成されることを特徴とする、請求項1に記載の電気回路装置。
- 前記第1のドープ型の前記半導体領域は、前記コンデンサー(Cvert、Clat)が形成される前記半導体基板(1)の前面から、前記半導体基板(1)の裏側まで延在し、該裏側には、裏側メタライゼーション(9)が施され、前記RCスナバ回路の前記抵抗(R)は、前記裏側メタライゼーション(9)を介して電気的接触が可能であり、前記前面には、少なくとも1つの電気コンタクト(7)が設けられ、前記少なくとも1つの更なるコンデンサー(Clat)は、前記少なくとも1つの電気コンタクト(7)を介して電気的接触が可能であることを特徴とする、請求項1又は2に記載の電気回路装置。
- 前記半導体基板(1)は、前記コンデンサー(Cvert、Clat)を形成するために、前記前面に、電気的に絶縁された誘電体層(4)又は積層によって被覆され、導電性材料(5)によって充填される凹部の配列をそれぞれ有することを特徴とする、請求項3に記載の電気回路装置。
- 前記コンデンサー(Cvert、Clat)は、電気絶縁性の共通の誘電体層(4)又は積層を有することを特徴とする、請求項4に記載の電気回路装置。
- 前記電気絶縁性の誘電体層(4)又は積層は、二酸化ケイ素及び窒化ケイ素から形成されることを特徴とする、請求項4又は5に記載の電気回路装置。
- 前記コンデンサー(Cvert、Clat)間に平衡抵抗が形成されることを特徴とする、請求項1〜6のいずれか1項に記載の電気回路装置。
- 前記ウェル領域(3)の周りにエッジ終端(11)が形成されることを特徴とする、請求項2に係る、請求項2〜7のいずれか1項に記載の電気回路装置。
- 前記半導体領域は、前記コンデンサー(Cvert、Clat)の領域において、5E18cm−3以上のドープ量を有することを特徴とする、請求項1〜8のいずれか1項に記載の電気回路装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102018219994.9 | 2018-11-22 | ||
DE102018219994.9A DE102018219994B4 (de) | 2018-11-22 | 2018-11-22 | RC-Snubberglied mit hoher Spannungsfestigkeit |
Publications (2)
Publication Number | Publication Date |
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JP2020088393A true JP2020088393A (ja) | 2020-06-04 |
JP7493324B2 JP7493324B2 (ja) | 2024-05-31 |
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Publication number | Publication date |
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US10957684B2 (en) | 2021-03-23 |
DE102018219994A1 (de) | 2020-05-28 |
DE102018219994B4 (de) | 2020-11-05 |
EP3657543B1 (de) | 2023-01-04 |
EP3657543A1 (de) | 2020-05-27 |
US20200168597A1 (en) | 2020-05-28 |
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