JP2020088010A - Cooler, base plate thereof, and semiconductor device - Google Patents

Cooler, base plate thereof, and semiconductor device Download PDF

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JP2020088010A
JP2020088010A JP2018215681A JP2018215681A JP2020088010A JP 2020088010 A JP2020088010 A JP 2020088010A JP 2018215681 A JP2018215681 A JP 2018215681A JP 2018215681 A JP2018215681 A JP 2018215681A JP 2020088010 A JP2020088010 A JP 2020088010A
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peripheral portion
base plate
outer peripheral
inner peripheral
cooler
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JP7166150B2 (en
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誠二 松島
Seiji Matsushima
誠二 松島
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Resonac Holdings Corp
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Showa Denko KK
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Abstract

To provide a cooler capable of avoiding adverse effects on a member to be cooled due to thermal expansion and contraction of a base plate.SOLUTION: A cooler according to the present invention includes a box-shaped container body 1 having an opening on the upper surface, and a base plate 5 on which a member to be cooled can be arranged on the upper surface side of an inner peripheral portion 6, and the lower surface side of the outer peripheral portion 7 of the base plate 5 is fixed to the peripheral edge portion of the upper surface opening of the container body 1, and therefore, the base plate 5 is intended for a cooler assembled so as to close the upper surface opening 11 of the container body 1. The inner peripheral portion 6 of the base plate 5 is formed separately from the outer peripheral portion 7 via a gap S, and the inner peripheral portion 6 and the outer peripheral portion 7 are connected to each other a low buffer portion 8 having a strength higher than that of the inner peripheral portion 6 and the outer peripheral portion 7.SELECTED DRAWING: Figure 1

Description

この発明は、電力用半導体素子等の冷却用に用いられる冷却器およびそのベース板に関し、さらに当該冷却器を備えた半導体装置に関する。 The present invention relates to a cooler used for cooling power semiconductor elements and the like and a base plate thereof, and further to a semiconductor device including the cooler.

ハイブリッド自動車(HV)、電気自動車(EV)等の電動機、産業機械、家電、情報端末等の電力駆動機器の主電力を制御するのに用いられる電力用半導体素子は、大電力を取り扱うために大きな発熱を伴う。このため高熱による悪影響を回避して高性能を維持するために、電力用半導体素子が実装された実装基板には、冷却器を接合または接着して、その冷却器によって発生した熱を放出するようにしている。 BACKGROUND ART Power semiconductor elements used to control main power of electric motors such as hybrid vehicles (HVs) and electric vehicles (EVs), industrial machinery, home appliances, power driving equipment such as information terminals are large in handling large power. With fever. For this reason, in order to avoid the adverse effects of high heat and maintain high performance, a cooler is bonded or adhered to the mounting board on which the power semiconductor element is mounted, and the heat generated by the cooler is released. I have to.

定置設備等のように、実装基板の周辺に放熱用に大きなスペースを確保できるような場合には、空冷式冷却器を採用することが可能であるが、自動車等の限られたスペース内に多数の機器が密集して配置されるような場合には、液冷式(水冷式)の冷却器を採用するのが通例である。 If a large space for heat dissipation can be secured around the mounting board, such as in stationary equipment, an air-cooled cooler can be used, but many in a limited space such as an automobile. In the case where the above devices are densely arranged, it is usual to employ a liquid-cooled (water-cooled) cooler.

下記特許文献1,2には、実装基板を冷却するための液冷式冷却器が開示されている。この冷却器は、上面に開口を有する水冷ジャケット等の箱形の容器本体と、その容器本体の上面開口を閉塞するように取り付けられるベース板とを備えている。ベース板は、その内周部の下面側に多数の放熱フィンが一体に形成されるとともに、上面側に実装基板が搭載されている。このベース板の多数の放熱フィンを容器本体内に上面開口を介して収容した状態で、ベース板の外周部が容器本体の上面開口周縁部に固定される。これにより容器本体およびベース板によって冷却水等の冷媒が流通する冷媒流路が形成され、冷却器の外部から冷媒流路の一端に供給される冷媒が、冷媒流路を通って他端から外部に流出されるように構成されている。こうして冷却器の冷媒流路内に循環される冷媒と、半導体素子とがベース板および放熱フィン等を介して熱交換して、半導体素子から発生する熱が冷媒を介して外部に放出され、それによって半導体素子が冷却されるようになっている。 The following Patent Documents 1 and 2 disclose liquid cooling type coolers for cooling the mounting substrate. This cooler includes a box-shaped container body such as a water cooling jacket having an opening on the upper surface, and a base plate attached so as to close the upper surface opening of the container body. A large number of heat radiation fins are integrally formed on the lower surface side of the inner peripheral portion of the base plate, and a mounting board is mounted on the upper surface side. The outer peripheral portion of the base plate is fixed to the peripheral edge portion of the upper surface opening of the container body in a state where the large number of heat radiation fins of the base plate are accommodated in the container main body through the upper surface opening. With this, the container body and the base plate form a refrigerant flow path through which a refrigerant such as cooling water flows, and the refrigerant supplied from the outside of the cooler to one end of the refrigerant flow path passes through the refrigerant flow path to the outside from the other end. Configured to be spilled into. In this way, the coolant circulated in the coolant passage of the cooler and the semiconductor element exchange heat with each other through the base plate and the heat radiation fins, and the heat generated from the semiconductor element is released to the outside through the coolant. The semiconductor element is cooled by this.

このような半導体装置に採用される実装基板は、セラミック板等の絶縁板と、その絶縁板の上下両面に積層されたはんだ等の配線層と、上側の配線層に積層された半導体素子とを備え、これらの各層部材がろう材等を介して積層一体化されて構成されている。そしてこの実装基板における下側の配線層が、上記冷却器のベース板にろう材を介して積層一体化されている。 A mounting substrate used for such a semiconductor device includes an insulating plate such as a ceramic plate, a wiring layer such as solder laminated on both upper and lower surfaces of the insulating plate, and a semiconductor element laminated on the upper wiring layer. Each of these layer members is laminated and integrated via a brazing material or the like. The lower wiring layer of the mounting board is laminated and integrated with the base plate of the cooler via a brazing material.

特開2016−92209号公報JP, 2016-92209, A 特開2018−67691号公報JP, 2008-67691, A

上記特許文献1,2に示す従来の冷却器においては、ベース板の熱伸縮による実装基板等への悪影響が懸念されるところである。例えば冷却器の作動中には、ベース板や実装基板が冷却されて、ベース板や実装基板が内側方向(内径方向)に向かうように熱収縮する。一方、ベース板は、アルミニウムや銅(それらの合金も含む、以下同じ)等によって構成されるとともに、実装基板の絶縁板はセラミック等によって構成されるため、両者の熱膨張係数が大きく異なっている。このため熱収縮時にベース板の収縮率は、絶縁板に比べて大きくなり、ベース板の収縮動作に絶縁板が追従できず、その収縮時の応力によって絶縁板を含む実装基板全体が撓んで、実装基板にその中央部が上方に盛り上がるような、いわゆる山反りが発生する。このように実装基板に反りが発生すると、半導体素子や絶縁板が配線層に対して接触不良が生じて、動作不良の要因となったり、放熱性能の低下を来すおそれがある。そればかりか場合によっては、絶縁板が割れて破損してしまい、絶縁性能も損なわれてしまうという課題があった。 In the conventional coolers disclosed in Patent Documents 1 and 2, there is a concern that the thermal expansion and contraction of the base plate may adversely affect the mounting board and the like. For example, during operation of the cooler, the base plate and the mounting substrate are cooled, and the base plate and the mounting substrate are thermally contracted toward the inner side (inner diameter direction). On the other hand, the base plate is made of aluminum or copper (including alloys thereof; the same applies hereinafter), and the insulating plate of the mounting board is made of ceramic or the like, so the thermal expansion coefficients of the two are greatly different. .. Therefore, the contraction rate of the base plate during thermal contraction becomes larger than that of the insulating plate, and the insulating plate cannot follow the contracting operation of the base plate, and the mounting board including the insulating plate bends due to the stress during the contraction, A so-called mountain warp occurs in which the central portion of the mounting board rises upward. When the mounting substrate warps in this manner, the semiconductor element or the insulating plate may have a poor contact with the wiring layer, which may cause a malfunction, or the heat dissipation performance may be deteriorated. Not only that, but in some cases, the insulating plate is cracked and damaged, and the insulating performance is also impaired.

この発明は、上記の課題に鑑みてなされたものであり、ベース板の熱伸縮による実装基板等の冷却対象部材への悪影響を回避することができる冷却器、そのベース板および半導体装置を提供することを目的とする。 The present invention has been made in view of the above problems, and provides a cooler capable of avoiding an adverse effect on a member to be cooled such as a mounting substrate due to thermal expansion and contraction of the base plate, the base plate, and a semiconductor device. The purpose is to

上記課題を解決するため、本発明は、以下の手段を備えるものである。 In order to solve the above-mentioned subject, the present invention comprises the following means.

[1]上面に開口を有する箱形の容器本体と、内周部の上面側に冷却対象部材が配置可能なベース板とを備え、前記ベース板の外周部の下面側が前記容器本体の上面開口周縁部に固定されることによって、前記ベース板が前記容器本体にその上面開口を閉塞するように組み付けられる冷却器であって、
前記ベース板における前記内周部が前記外周部に対し隙間を介して別体に形成されるとともに、前記内周部および前記外周部が、前記内周部および前記外周部よりも強度が低い緩衝部を介して連結されていることを特徴とする冷却器。
[1] A box-shaped container body having an opening on the upper surface, and a base plate on which an object to be cooled can be arranged on the upper surface side of the inner peripheral portion, and the lower surface side of the outer peripheral portion of the base plate is the upper surface opening of the container body. A cooler in which the base plate is attached to the container body so as to close an upper surface opening thereof by being fixed to a peripheral portion,
The inner peripheral portion of the base plate is formed separately from the outer peripheral portion via a gap, and the inner peripheral portion and the outer peripheral portion have a lower strength than the inner peripheral portion and the outer peripheral portion. A cooler characterized in that it is connected via a section.

[2]前記緩衝部に、断面V字状の折曲部が形成されている前項1に記載の冷却器。 [2] The cooler according to the above item 1, wherein a bent portion having a V-shaped cross section is formed in the buffer portion.

[3]前記ベース板における前記外周部が、前記内周部に対し強度が高い材質によって形成されている前項1または2に記載の冷却器。 [3] The cooler according to the above 1 or 2, wherein the outer peripheral portion of the base plate is formed of a material having high strength with respect to the inner peripheral portion.

[4]前記ベース板における前記内周部が、前記外周部に対し熱伝導率が高い材質によって形成されている前項1〜3のいずれか1項に記載の冷却器。 [4] The cooler according to any one of the aforementioned Items 1 to 3, wherein the inner peripheral portion of the base plate is made of a material having a higher thermal conductivity than the outer peripheral portion.

[5]前記ベース板における前記外周部および前記内周部がアルミニウムよって構成されている前項1〜3のいずれか1項に記載の冷却器。 [5] The cooler according to any one of items 1 to 3, wherein the outer peripheral portion and the inner peripheral portion of the base plate are made of aluminum.

[6]上面に開口を有する箱形の容器本体に、その上面開口を閉塞するように組み付けられる冷却器のベース板であって、
上面側に冷却対象部材が配置可能な内周部と、
前記内周部の外側に設けられ、かつ下面側が容器本体の上面開口縁部に固定可能な外周部とを備え、
前記内周部が前記外周部に対し隙間を介して別体に形成されるとともに、前記内周部および前記外周部が、前記内周部および前記外周部よりも強度が低い緩衝部を介して連結されていることを特徴とする冷却器のベース板。
[6] A base plate of a cooler, which is assembled to a box-shaped container body having an opening on the upper surface so as to close the upper opening,
An inner peripheral portion on which the cooling target member can be arranged on the upper surface side,
An outer peripheral portion that is provided outside the inner peripheral portion and that can be fixed to the upper surface opening edge portion of the container body on the lower surface side,
The inner peripheral portion is formed separately from the outer peripheral portion via a gap, and the inner peripheral portion and the outer peripheral portion are interposed via a buffer portion having lower strength than the inner peripheral portion and the outer peripheral portion. A base plate of a cooler characterized by being connected.

[7]上面に開口を有する箱形の容器本体と、外周部の下面側が前記容器本体の上面開口部周縁部に固定されて前記容器本体の上面開口部を閉塞するベース板と、前記ベース板の内周部上面側に配置され、かつ半導体素子を含む実装基板とを備えた半導体装置であって、
前記ベース板における前記内周部が前記外周部に対し隙間を介して別体に形成されるとともに、前記内周部および前記外周部が、前記内周部および前記外周部よりも強度が低い緩衝部を介して連結されていることを特徴とする半導体装置。
[7] A box-shaped container main body having an opening on the upper surface, a base plate whose lower surface side of an outer peripheral portion is fixed to a peripheral edge portion of the upper surface opening of the container main body to close the upper surface opening of the container main body, and the base plate A semiconductor device which is disposed on the upper surface side of the inner peripheral part of and which includes a mounting substrate including a semiconductor element,
The inner peripheral portion of the base plate is formed separately from the outer peripheral portion via a gap, and the inner peripheral portion and the outer peripheral portion have a lower strength than the inner peripheral portion and the outer peripheral portion. A semiconductor device, characterized in that the semiconductor devices are connected via parts.

[8]前記実装基板は、絶縁板を含み、その絶縁板の上側に前記半導体素子が配置されている前項7に記載の半導体装置。 [8] The semiconductor device according to the above item 7, wherein the mounting substrate includes an insulating plate, and the semiconductor element is arranged above the insulating plate.

発明[1]の冷却器によれば、ベース板における内周部を外周部に対し隙間を介して別体に形成し、両者間を強度が低い緩衝部によって連結するようにしているため、例えば冷却時にベース板の外周部が熱収縮してその外周部に内側に向かう応力が発生したとしても、その応力は緩衝部が変形することによって吸収される。従ってベース板の熱伸縮による悪影響を確実に回避することができる。 According to the cooler of the invention [1], the inner peripheral portion of the base plate is formed separately from the outer peripheral portion with a gap therebetween, and the two are connected by the buffer portion having low strength. Even if the outer peripheral portion of the base plate undergoes thermal contraction during cooling to generate an inward stress on the outer peripheral portion, the stress is absorbed by the deformation of the buffer portion. Therefore, it is possible to surely avoid the adverse effect due to the thermal expansion and contraction of the base plate.

発明[2]の冷却器によれば、熱収縮等によって発生する応力によって緩衝部が変形する際に、V字状の折曲部が変形起点となって変形が開始されるため、発生する応力が小さくともその応力を確実に吸収できて、ベース板の熱伸縮よる悪影響をより一層確実に回避することができる。 According to the cooler of the invention [2], when the buffer portion is deformed by the stress generated by thermal contraction or the like, the V-shaped bent portion serves as the deformation starting point and the deformation is started. Even if is small, the stress can be reliably absorbed, and the adverse effect of thermal expansion and contraction of the base plate can be more surely avoided.

発明[3]の冷却器によれば、ベース板外周部を内周部よりも強度が高い材質によって形成しているため、外周部および容器本体間に介在されるシール部材の弾性反発力に対しても、外周部が変形することがない。従ってベース板をシール部材を十分に圧縮した状態で容器本体に確実に取り付けることができる。 According to the cooler of the invention [3], since the outer peripheral portion of the base plate is formed of a material having higher strength than the inner peripheral portion, the elastic repulsive force of the seal member interposed between the outer peripheral portion and the container body is prevented. However, the outer peripheral portion is not deformed. Therefore, the base plate can be securely attached to the container body with the seal member sufficiently compressed.

発明[4]の冷却器によれば、ベース内周部を熱伝導率が高い材質によって形成しているため、内周部に設けられる冷却対象部材と容器本体内の冷媒との間で効率良く熱交換することができ、十分な冷却性能を確実に得ることができる。 According to the cooler of the invention [4], since the inner peripheral portion of the base is formed of a material having high thermal conductivity, the cooling target member provided in the inner peripheral portion and the refrigerant in the container body are efficiently provided. Heat can be exchanged, and sufficient cooling performance can be reliably obtained.

発明[5]の冷却器によれば、上記の効果をより一層確実に得ることができる。 According to the cooler of the invention [5], the above effects can be obtained more reliably.

発明[6]の冷却器のベース板によれば、上記と同様の主要部を備えているため、上記と同様の効果を得ることができる。 According to the base plate of the cooler of the invention [6], since it has the same main part as described above, the same effect as described above can be obtained.

発明[7]の半導体装置によれば、上記と同様の主要部を備えているため、上記と同様の効果を得ることができる。 According to the semiconductor device of the invention [7], since the same main part as described above is provided, the same effect as the above can be obtained.

発明[8]の半導体装置によれば、熱収縮による絶縁板の割れ等も確実に防止することができる。 According to the semiconductor device of the invention [8], it is possible to reliably prevent the insulating plate from cracking due to thermal contraction.

図1はこの発明の第1実施形態である冷却器が適用された電力用半導体装置を示す断面図である。FIG. 1 is a sectional view showing a power semiconductor device to which a cooler according to a first embodiment of the present invention is applied. 図2はこの発明の第2実施形態である冷却器が適用された電力用半導体装置を示す断面図である。FIG. 2 is a sectional view showing a power semiconductor device to which a cooler according to a second embodiment of the present invention is applied. 図3は第2実施形態の半導体装置における緩衝部周辺を拡大して示す断面図であって、図(a)は通常状態での断面図、図(b)はベース板外周部が熱収縮している状態での断面図である。3A and 3B are enlarged cross-sectional views showing the periphery of the buffer portion in the semiconductor device of the second embodiment. FIG. 3A is a cross-sectional view in a normal state, and FIG. It is a sectional view in the state where it is. 図4は参考例である従来相当の電力用半導体装置を示す断面図である。FIG. 4 is a sectional view showing a conventional power semiconductor device as a reference example.

<第1実施形態>
図1はこの発明の第1実施形態である冷却器が適用された電力用半導体装置を示す断面図である。同図に示すようにこの半導体装置は、冷却ジャケット等の容器本体1と、ベース板5と、実装基板2とを基本的な構成要素として備えている。
<First Embodiment>
FIG. 1 is a sectional view showing a power semiconductor device to which a cooler according to a first embodiment of the present invention is applied. As shown in the figure, this semiconductor device includes a container body 1 such as a cooling jacket, a base plate 5, and a mounting substrate 2 as basic components.

なお本明細書および特許請求の範囲において、アルミニウムという用語は、特に明示した場合を除き、純アルミニウムはもちろん、アルミニウム合金も含む意味で用いられる。さらに本明細書および特許請求の範囲において、方向を示す「上方(上側)」や「下方(下側)」等の用語は、重力方向を基準とするものではなく、便宜的に図1に示す状態を基準にしたものである。つまり、本発明の冷却器や半導体装置は実使用状態において、図1に示す状態の他に、例えば図1の状態に対し、上下を反転させた状態、上下を左右方向に向けて配置した状態、上下を斜め方向に向けて配置した状態で使用するようにしても良い。 In the present specification and claims, the term aluminum is used to include not only pure aluminum but also aluminum alloys, unless otherwise specified. Further, in the present specification and claims, terms such as “upper (upper)” and “lower (lower)” indicating directions are not based on the direction of gravity, but are shown in FIG. 1 for convenience. It is based on the state. That is, the cooler and the semiconductor device of the present invention are in actual use, in addition to the state shown in FIG. 1, for example, a state in which the top and bottom are inverted with respect to the state in FIG. Alternatively, it may be used in a state where the upper and lower parts are arranged obliquely.

本第1実施形態の半導体装置において容器本体1は、平面視が矩形状に形成されており、全体として箱形(ボックス型)の形状に形成されている。この容器本体1には、上面に開口11を有し、その上面開口11によって容器本体1の内部が上方に開放されている。 In the semiconductor device of the first embodiment, the container body 1 is formed in a rectangular shape in plan view, and is formed in a box shape as a whole. The container body 1 has an opening 11 on the upper surface, and the inside of the container body 1 is opened upward by the upper surface opening 11.

ベース板5は、平面視において外周形状が、容器本体1の外周形状に対応する矩形状に形成されている。このベース板5は、ベース板5の内側の領域を構成する矩形状の内周部6と、ベース板5の外側の領域を構成し、かつ内周部6の外側に隙間Sを介して配置される矩形リング状の外周部7と、内周部6および外周部7間の隙間Sにその隙間Sを閉塞するように配置される矩形リング状の緩衝部8とを備えている。 The outer peripheral shape of the base plate 5 is formed in a rectangular shape corresponding to the outer peripheral shape of the container body 1 in a plan view. The base plate 5 constitutes a rectangular inner peripheral portion 6 forming an inner region of the base plate 5 and an outer peripheral region of the base plate 5, and is arranged outside the inner peripheral portion 6 with a gap S therebetween. A rectangular ring-shaped outer peripheral portion 7 and a rectangular ring-shaped cushioning portion 8 arranged in the gap S between the inner peripheral portion 6 and the outer peripheral portion 7 so as to close the gap S.

内周部6は、その外周縁部の上側に外周凹段部65が形成されている。さらに外周部7は、その内周縁部の上側に内周凹段部75が形成されている。そして緩衝部8の内側部が内周部6の外周凹段部65上に載置されるようにして液密状態に接合一体化されるとともに、緩衝部8の外側部が外周部7の内周凹段部75上に載置されるようにして液密状態に接合一体化されている。これにより、隙間Sを介して別体に形成された内周部6および外周部7が緩衝部8を介して連結一体化されてベース板5が構成されている。なおベース板5における緩衝部8は、内周部6および外周部7間の隙間Sにその全周にわたって充填されるように配置されている。 The inner peripheral portion 6 has an outer peripheral recessed step portion 65 formed above the outer peripheral edge portion. Further, the outer peripheral portion 7 has an inner peripheral concave stepped portion 75 formed above the inner peripheral edge portion. The inner portion of the buffer portion 8 is joined and integrated in a liquid-tight state by being placed on the outer peripheral concave step portion 65 of the inner peripheral portion 6, and the outer portion of the buffer portion 8 is located inside the outer peripheral portion 7. As it is placed on the circumferential concave step portion 75, it is joined and integrated in a liquid-tight state. As a result, the inner peripheral portion 6 and the outer peripheral portion 7 that are separately formed via the gap S are connected and integrated via the buffer portion 8 to form the base plate 5. The buffer portion 8 of the base plate 5 is arranged so as to fill the gap S between the inner peripheral portion 6 and the outer peripheral portion 7 over the entire circumference thereof.

本第1実施形態において、内周部6および緩衝部8間の接着(接合)方法や、外周部7および緩衝部8間の接着(接合)方法は、特に限定されるものではなく、ろう付け処理、溶接処理、節着材塗布処理等の適宜の方法によってそれぞれ適宜接合一体化されている。 In the first embodiment, the bonding (joining) method between the inner peripheral portion 6 and the buffer portion 8 and the bonding (bonding) method between the outer peripheral portion 7 and the buffer portion 8 are not particularly limited, and brazing Each of them is appropriately joined and integrated by an appropriate method such as a treatment, a welding treatment, and a knotting material coating treatment.

内周部6にはその下面側に多数の放熱フィン61が下方に突出するようにして一体に形成されている。本実施形態において、放熱フィン61の構成は特に限定されるものではなく、プレートフィンであっても、ピンフィンであっても良い。さらにピンフィンを採用する場合には、その断面形状が限定されるものではなく、円形状、楕円形状、長円形状、多角形状、異形状等、どのような断面形状に形成されていても良い。 A large number of heat radiation fins 61 are integrally formed on the lower surface of the inner peripheral portion 6 so as to project downward. In the present embodiment, the structure of the radiation fin 61 is not particularly limited, and may be a plate fin or a pin fin. Further, when the pin fin is adopted, the cross-sectional shape is not limited, and it may be formed in any cross-sectional shape such as a circular shape, an elliptical shape, an oval shape, a polygonal shape, and an irregular shape.

本第1実施形態においてベース板5の内周部6は、外周部7に比べて熱伝導率が高い材質によって構成されている。さらに外周部7は、内周部6に比べて強度が高い材質によって構成されている。 In the first embodiment, the inner peripheral portion 6 of the base plate 5 is made of a material having a higher thermal conductivity than the outer peripheral portion 7. Further, the outer peripheral portion 7 is made of a material having higher strength than the inner peripheral portion 6.

具体的に内周部6の素材としては、合金番号がA1050(熱伝導率230W/mK、耐力30MPa)、A1100(熱伝導率220W/mK、耐力35MPa)等の純アルミニウムを好適に用いることができる。また外周部7の素材としては、合金番号がA6063(熱伝導率210W/mK、耐力145MPa)等のAl−Mg−Si系合金、A3003(熱伝導率170W/mK、耐力125MPa)等のAl−Mn系合金を好適に用いることができる。 Specifically, as the material of the inner peripheral portion 6, it is preferable to use pure aluminum having an alloy number of A1050 (thermal conductivity 230 W/mK, proof stress 30 MPa), A1100 (thermal conductivity 220 W/mK, proof stress 35 MPa). it can. As the material of the outer peripheral portion 7, an Al-Mg-Si alloy such as alloy No. A6063 (thermal conductivity 210 W/mK, proof stress 145 MPa), Al-Mg-Si alloy such as A3003 (thermal conductivity 170 W/mK, proof stress 125 MPa). A Mn-based alloy can be preferably used.

また本実施形態においてベース板5の緩衝部8は、内周部6および外周部7に比べて強度が低い材質によって構成されている。具体的に緩衝部8の素材としては、合金番号がA1050(熱伝導率230W/mK、耐力30MPa)、A1100(熱伝導率220W/mK、耐力35MPa)等の純アルミニウムを好適に用いることができる。 Further, in the present embodiment, the buffer portion 8 of the base plate 5 is made of a material having lower strength than the inner peripheral portion 6 and the outer peripheral portion 7. Specifically, as the material of the buffer portion 8, pure aluminum having an alloy number of A1050 (thermal conductivity of 230 W/mK, proof stress of 30 MPa), A1100 (thermal conductivity of 220 W/mK, proof stress of 35 MPa) or the like can be preferably used. ..

以上の構成のベース板5が容器本体1に組み付けられて冷却器が形成される。すなわちベース板5の放熱フィン61が容器本体1の上面開口11を介して容器本体1内に収容され、さらにベース板5の外周部7の下面が容器本体1の上面開口周縁部に、Oリングやメタルガスケット等のシール部材3を介して載置される。その状態で、外周部7にその上方側から貫通されたボルト4が容器本体1の上面開口周縁部に締結されて固定される。これによりベース板5が容器本体1に組み付けられる。この組付状態においては、容器本体1とベース板5とによって密閉された冷媒流路が形成されるとともに、その冷媒流路内に放熱フィン6が配置されている。 The base plate 5 having the above structure is assembled to the container body 1 to form a cooler. That is, the heat radiation fins 61 of the base plate 5 are accommodated in the container body 1 through the upper surface opening 11 of the container body 1, and the lower surface of the outer peripheral portion 7 of the base plate 5 is attached to the peripheral edge of the upper surface opening of the container body 1 by an O-ring. It is placed via a seal member 3 such as a metal gasket or a metal gasket. In this state, the bolt 4 penetrating the outer peripheral portion 7 from above is fastened and fixed to the peripheral edge portion of the upper opening of the container body 1. As a result, the base plate 5 is assembled to the container body 1. In this assembled state, a refrigerant flow path sealed by the container body 1 and the base plate 5 is formed, and the heat radiation fins 6 are arranged in the refrigerant flow path.

なおこの組付状態において、放熱フィン61の下端は、容器本体1の内部底面に接触させておいても良い。 In this assembled state, the lower ends of the radiation fins 61 may be in contact with the inner bottom surface of the container body 1.

また、ベース板5の内周部6の上側には冷却対象部材としての実装基板2が設けられている。実装基板2は、セラミック板等によって構成される絶縁板21を備え、その絶縁板21の上下両面にろう材等を介してアルミニウム製の配線層22,22が積層されるとともに、上側の配線層22の上面にはんだ層23を介して電力用半導体素子24が固定されている。 Further, the mounting substrate 2 as a cooling target member is provided above the inner peripheral portion 6 of the base plate 5. The mounting board 2 includes an insulating plate 21 formed of a ceramic plate or the like, and wiring layers 22 and 22 made of aluminum are laminated on the upper and lower surfaces of the insulating plate 21 with a brazing material or the like, and the upper wiring layer is formed. A power semiconductor element 24 is fixed to the upper surface of 22 via a solder layer 23.

この実装基板2における下側の配線層22が、ベース板5の内周部6の上面にろう付け処理、溶接処理、接着剤塗布処理等によって結合される。これにより本実施形態の半導体装置が形成される。 The lower wiring layer 22 of the mounting board 2 is bonded to the upper surface of the inner peripheral portion 6 of the base plate 5 by brazing, welding, adhesive coating, or the like. As a result, the semiconductor device of this embodiment is formed.

本実施形態において半導体装置の組付手順は、特に限定されるものではない。例えばベース板5に実装基板2を組み付けて半導体モジュールを形成し、その半導体モジュールを容器本体1に組み付けるようにしても良いし、容器本体1にベース板5を組み付けた後、容器本体1のベース板5に実装基板2を取り付けるようにしても良い。 In the present embodiment, the procedure for assembling the semiconductor device is not particularly limited. For example, the mounting board 2 may be assembled to the base plate 5 to form a semiconductor module, and the semiconductor module may be assembled to the container body 1. Alternatively, after the base plate 5 is assembled to the container body 1, the base of the container body 1 is assembled. The mounting substrate 2 may be attached to the plate 5.

以上の構成の本実施形態の半導体装置においては、容器本体1に図示しない冷媒入口および冷媒出口が設けられており、冷媒入口を介して容器本体1(冷媒流路)内に冷媒が流入されて、冷媒流路における多数の放熱フィン61の各間を流通した後、冷媒出口から外部に流出される。こうして容器本体1(冷媒流路)内を流通する冷媒と、半導体素子24との間で熱交換されることにより、半導体素子24から発生する熱が、冷媒を介して外部に放出されて、半導体素子24が冷却されるようになっている。なお本実施形態において冷媒としては、冷却水等の冷却用流体が用いられている。 In the semiconductor device of the present embodiment having the above-described configuration, the container body 1 is provided with a refrigerant inlet and a refrigerant outlet (not shown), and the refrigerant flows into the container body 1 (refrigerant flow path) through the refrigerant inlet. After flowing through each of the plurality of heat radiation fins 61 in the refrigerant flow path, the refrigerant flows out from the refrigerant outlet. In this way, heat exchange between the refrigerant flowing through the container body 1 (refrigerant flow path) and the semiconductor element 24 causes heat generated from the semiconductor element 24 to be radiated to the outside through the refrigerant, and The element 24 is adapted to be cooled. In this embodiment, a cooling fluid such as cooling water is used as the refrigerant.

以上の構成の本第1実施形態の半導体装置によれば、ベース板5を、内周部6および外周部7に分割して、その間を強度が低い緩衝部8によって連結しているため、冷却器1の作動によってベース板5や実装基板2等の半導体モジュールが冷却されて、ベース板5の外周部7が熱収縮して外周部7に内側に向かう応力Fが発生したとしても、その応力Fは緩衝部8が変形することによって吸収される。従って外周部7の熱収縮による悪影響を回避することができる。例えば外周部7の熱収縮時の応力Fによって、実装基板2の絶縁板21に山反りが発生するような不具合を防止でき、その反りによる半導体素子24や絶縁板21の配線層22等への接触不良を防止できて、動作不良の発生や放熱性能の低下を防止できるとともに、絶縁板が割れて破損してしまうような不具合も確実に防止できて、良好な絶縁性能を維持することができる。 According to the semiconductor device of the first embodiment having the above-described configuration, the base plate 5 is divided into the inner peripheral portion 6 and the outer peripheral portion 7, and the space between them is connected by the buffer portion 8 having low strength. Even if the semiconductor module such as the base plate 5 and the mounting substrate 2 is cooled by the operation of the container 1, and the outer peripheral portion 7 of the base plate 5 is thermally contracted to generate an inward stress F in the outer peripheral portion 7, the stress F is generated. F is absorbed by the deformation of the buffer portion 8. Therefore, it is possible to avoid the adverse effect due to the heat shrinkage of the outer peripheral portion 7. For example, it is possible to prevent a problem in which the insulating plate 21 of the mounting substrate 2 is warped due to the stress F generated when the outer peripheral portion 7 is thermally contracted, and the semiconductor element 24 and the wiring layer 22 of the insulating plate 21 due to the warping can be prevented. It is possible to prevent contact failure, prevent the occurrence of operation failure and deterioration of heat dissipation performance, and it is possible to reliably prevent problems such as breakage and damage of the insulating plate, and maintain good insulation performance. ..

詳細に説明すると、図4に示す従来相当の参考例の半導体装置のようにベース板105が一体成品によって形成されている場合には、ベース板105に熱収縮による内側に向かう応力Fが発生すると、実装基板2の絶縁板21はベース板105よりも熱収縮率が小さいため、絶縁板21はその応力Fを吸収できず、同図の想像線Lに示すように絶縁板21を含む実装基板21全体にその中央部が上方に盛り上がるような山反りが発生する。そうすると、半導体素子24や絶縁板21が配線層22等に対し接触不良が生じて、動作不良が発生したり、放熱性能が低下してしまい、場合によっては絶縁板21が破損して、絶縁性能も損なわれてしまうおそれがある。なお図4の参考例の半導体装置の構成において、図1に示す第1実施形態の半導体装置の構成に相当する部分には、同一の符号を付している。 More specifically, when the base plate 105 is formed as an integral component as in the semiconductor device of the reference example corresponding to the related art shown in FIG. 4, an inward stress F due to thermal contraction is generated in the base plate 105. Since the insulating plate 21 of the mounting board 2 has a smaller thermal contraction rate than the base plate 105, the insulating plate 21 cannot absorb the stress F, and the mounting board including the insulating plate 21 as indicated by an imaginary line L in FIG. A mountain warp occurs such that the central portion of the whole 21 rises upward. Then, the semiconductor element 24 or the insulating plate 21 may have a poor contact with the wiring layer 22 or the like, resulting in a malfunction or a decrease in heat dissipation performance. May be damaged. In addition, in the configuration of the semiconductor device of the reference example of FIG. 4, parts corresponding to the configuration of the semiconductor device of the first embodiment shown in FIG.

これに対し本実施形態においては既述した通り、ベース板5の熱収縮による応力Fが、緩衝部8の変形によって吸収されるため、その応力Fによる実装基板2への悪影響を回避することができる。 On the other hand, in the present embodiment, as described above, since the stress F due to the heat shrinkage of the base plate 5 is absorbed by the deformation of the buffer portion 8, it is possible to avoid the adverse effect of the stress F on the mounting substrate 2. it can.

また本実施形態の半導体装置のベース板5においては、放熱フィン61が形成される内周部6を熱伝導率が高い素材によって構成しているため、半導体素子24から発生する熱は内周部6を介して容器本体1内の冷媒にスムーズに吸収され、効率良く熱交換することができ、十分な冷却性能を得ることができる。 Further, in the base plate 5 of the semiconductor device of the present embodiment, the inner peripheral portion 6 in which the heat radiation fins 61 are formed is made of a material having a high thermal conductivity, so that the heat generated from the semiconductor element 24 is generated in the inner peripheral portion. It is smoothly absorbed by the refrigerant in the container body 1 via 6, heat exchange can be efficiently performed, and sufficient cooling performance can be obtained.

さらに本実施形態においては、容器本体1に固定されるベース板5の外周部7を強度が高い素材によって構成しているため、外周部7はシール部材3の弾性反発力に対しても変形することがなく、外周部7をシール部材3を圧縮した状態で容器本体1に確実に取り付けることができる。従って密封性を十分に確保しつつ、ベース板5としての外周部7を容器本体1に位置精度良く安定した状態に取り付けることができ、製品価値を格段に向上させることができる。 Further, in the present embodiment, the outer peripheral portion 7 of the base plate 5 fixed to the container body 1 is made of a material having high strength, and therefore the outer peripheral portion 7 is also deformed by the elastic repulsive force of the seal member 3. Therefore, the outer peripheral portion 7 can be reliably attached to the container body 1 in a state where the seal member 3 is compressed. Therefore, the outer peripheral portion 7 serving as the base plate 5 can be attached to the container body 1 in a stable state with high positional accuracy while sufficiently ensuring the hermeticity, and the product value can be significantly improved.

なお本実施形態において例えば、ベース板5における内周部6の板厚を外周部7の板厚に比べて薄く形成した場合には、内周部6の熱伝達率をさらに向上できて、冷却性能をより一層向上させることができるとともに、外周部7の強度をさらに向上できて、ベース板5を容器本体1により一層安定した状態に取り付けることができる。 In the present embodiment, for example, when the thickness of the inner peripheral portion 6 of the base plate 5 is made smaller than the thickness of the outer peripheral portion 7, the heat transfer coefficient of the inner peripheral portion 6 can be further improved, and cooling can be performed. The performance can be further improved, the strength of the outer peripheral portion 7 can be further improved, and the base plate 5 can be attached to the container body 1 in a more stable state.

<第2実施形態>
図2はこの発明の第2実施形態である冷却器が適用された電力用半導体装置を示す断面図、図3はその半導体装置における緩衝部周辺を拡大して示す断面図である。
<Second Embodiment>
FIG. 2 is a cross-sectional view showing a power semiconductor device to which a cooler according to a second embodiment of the present invention is applied, and FIG. 3 is a cross-sectional view showing an enlarged periphery of a buffer portion in the semiconductor device.

両図に示すようにこの半導体装置においては、ベース板5における内周部6および外周部7を連結する緩衝部8にその中間部が断面V字状に折曲されて折曲部81が形成されている。そしてこの折曲部81の先端部(谷底部)が変形起点として構成されている。 As shown in both figures, in this semiconductor device, a bent portion 81 is formed by bending a middle portion of the buffer portion 8 connecting the inner peripheral portion 6 and the outer peripheral portion 7 of the base plate 5 into a V-shaped cross section. Has been done. The tip (valley bottom) of the bent portion 81 is configured as a deformation starting point.

本第2実施形態の半導体装置において他の構成は、上記第1実施形態と実質的に同様であるため、同一または相当部分に同一符号を付して重複説明は省略する。 Since the other configurations of the semiconductor device of the second embodiment are substantially the same as those of the first embodiment, the same or corresponding parts will be denoted by the same reference symbols and redundant description will be omitted.

この第2実施形態の半導体装置においても上記と同様の作用効果を得ることができる。その上さらに、この第2実施形態の半導体装置において、熱収縮によってベース板5の外周部7に発生する応力Fは上記と同様、緩衝部8の変形によって吸収されるが、その変形時には緩衝部8のV字状折曲部81が変形起点となって、図3(a)の状態から折曲部81がその折曲角度が小さくなるように変形することによって同図(b)の状態となる。このように本第2実施形態では、緩衝部8の折曲部81において円滑かつ確実に変形が開始されるため、外周部7に発生する応力Fが小さくともその応力Fを確実に吸収することができ、ベース板5の熱伸縮による悪影響をより確実に回避することができ、信頼性をより一層向上させることができる。 Also in the semiconductor device of the second embodiment, the same operational effects as above can be obtained. Furthermore, in the semiconductor device of the second embodiment, the stress F generated in the outer peripheral portion 7 of the base plate 5 due to heat contraction is absorbed by the deformation of the buffer portion 8 as in the above, but at the time of the deformation, the buffer portion The V-shaped bent portion 81 of FIG. 8 serves as a deformation starting point, and the bent portion 81 is deformed from the state of FIG. 3(a) so that the bending angle is reduced to the state of FIG. 3(b). Become. As described above, in the second embodiment, since the bent portion 81 of the buffer portion 8 starts to be deformed smoothly and reliably, the stress F generated in the outer peripheral portion 7 can be reliably absorbed even if the stress F is small. Therefore, it is possible to more reliably avoid the adverse effect of thermal expansion and contraction of the base plate 5, and it is possible to further improve reliability.

<変形例>
上記実施形態においては、半導体素子24(実装基板2)を冷却する冷却器を例に挙げて説明したが、それだけに限られず、本発明においては、冷却対象とする部材(冷却対象部材)は、実装基板に限られず、実装基板(半導体素子)以外の冷却対象部材(発熱体等)を冷却する冷却器にも適用することができる。
<Modification>
In the above-described embodiment, the cooler that cools the semiconductor element 24 (mounting substrate 2) has been described as an example, but the invention is not limited to this. In the present invention, the member to be cooled (member to be cooled) is mounted. The invention is not limited to the substrate, and can be applied to a cooler that cools a member to be cooled (heating element or the like) other than the mounting substrate (semiconductor element).

また上記実施形態においては、ベース板を容器本体にボルトによって固定する場合を例に挙げて説明したが、それだけに限られず、本発明においては、ベース板の容器本体に対する固定手段は限定されるものではない。例えばボルト以外に、ねじやクランプ等の固定手段を用いて固定するようにしても良い。 Further, in the above embodiment, the case where the base plate is fixed to the container body by the bolt has been described as an example, but the present invention is not limited thereto, and in the present invention, the fixing means for the base plate to the container body is not limited. Absent. For example, instead of bolts, fixing means such as screws or clamps may be used for fixing.

この発明の冷却器は、電力用半導体素子が搭載された実装基板等の冷却対象部材を冷却するための冷却装置として好適に用いることができる。 The cooler of the present invention can be suitably used as a cooling device for cooling a member to be cooled such as a mounting substrate on which a power semiconductor element is mounted.

1:容器本体(ジャケット)
11:上面開口
2:実装基板(冷却対象部材)
21:絶縁板
24:半導体素子
5:ベース板
6:内周部
7:外周部
8:緩衝部
81:折曲部
S:隙間
1: Container body (jacket)
11: Top surface opening 2: Mounting board (member to be cooled)
21: insulating plate 24: semiconductor element 5: base plate 6: inner peripheral part 7: outer peripheral part 8: buffer part 81: bent part S: gap

Claims (8)

上面に開口を有する箱形の容器本体と、内周部の上面側に冷却対象部材が配置可能なベース板とを備え、前記ベース板の外周部の下面側が前記容器本体の上面開口周縁部に固定されることによって、前記ベース板が前記容器本体にその上面開口を閉塞するように組み付けられる冷却器であって、
前記ベース板における前記内周部が前記外周部に対し隙間を介して別体に形成されるとともに、前記内周部および前記外周部が、前記内周部および前記外周部よりも強度が低い緩衝部を介して連結されていることを特徴とする冷却器。
A box-shaped container main body having an opening on the upper surface, and a base plate on which an object to be cooled can be arranged on the upper surface side of the inner peripheral portion, the lower surface side of the outer peripheral portion of the base plate is the upper opening peripheral edge portion of the container main body. By being fixed, the base plate is a cooler assembled to the container body so as to close the upper surface opening,
The inner peripheral portion of the base plate is formed separately from the outer peripheral portion via a gap, and the inner peripheral portion and the outer peripheral portion have a lower strength than the inner peripheral portion and the outer peripheral portion. A cooler characterized in that it is connected via a section.
前記緩衝部に、断面V字状の折曲部が形成されている請求項1に記載の冷却器。 The cooler according to claim 1, wherein a bent portion having a V-shaped cross section is formed in the buffer portion. 前記ベース板における前記外周部が、前記内周部に対し強度が高い材質によって形成されている請求項1または2に記載の冷却器。 The cooler according to claim 1 or 2, wherein the outer peripheral portion of the base plate is formed of a material having higher strength than the inner peripheral portion. 前記ベース板における前記内周部が、前記外周部に対し熱伝導率が高い材質によって形成されている請求項1〜3のいずれか1項に記載の冷却器。 The cooler according to claim 1, wherein the inner peripheral portion of the base plate is formed of a material having a higher thermal conductivity than the outer peripheral portion. 前記ベース板における前記外周部および前記内周部がアルミニウムよって構成されている請求項1〜3のいずれか1項に記載の冷却器。 The cooler according to claim 1, wherein the outer peripheral portion and the inner peripheral portion of the base plate are made of aluminum. 上面に開口を有する箱形の容器本体に、その上面開口を閉塞するように組み付けられる冷却器のベース板であって、
上面側に冷却対象部材が配置可能な内周部と、
前記内周部の外側に設けられ、かつ下面側が容器本体の上面開口縁部に固定可能な外周部とを備え、
前記内周部が前記外周部に対し隙間を介して別体に形成されるとともに、前記内周部および前記外周部が、前記内周部および前記外周部よりも強度が低い緩衝部を介して連結されていることを特徴とする冷却器のベース板。
A box-shaped container body having an opening on the upper surface, a base plate of a cooler assembled so as to close the upper opening,
An inner peripheral portion on which the cooling target member can be arranged on the upper surface side,
An outer peripheral portion that is provided outside the inner peripheral portion and that can be fixed to the upper surface opening edge portion of the container main body on the lower surface side,
The inner peripheral portion is formed separately from the outer peripheral portion via a gap, and the inner peripheral portion and the outer peripheral portion are interposed via a buffer portion having lower strength than the inner peripheral portion and the outer peripheral portion. A base plate of a cooler characterized by being connected.
上面に開口を有する箱形の容器本体と、外周部の下面側が前記容器本体の上面開口部周縁部に固定されて前記容器本体の上面開口部を閉塞するベース板と、前記ベース板の内周部上面側に配置され、かつ半導体素子を含む実装基板とを備えた半導体装置であって、
前記ベース板における前記内周部が前記外周部に対し隙間を介して別体に形成されるとともに、前記内周部および前記外周部が、前記内周部および前記外周部よりも強度が低い緩衝部を介して連結されていることを特徴とする半導体装置。
A box-shaped container body having an opening on the upper surface, a base plate whose lower surface side of an outer peripheral portion is fixed to a peripheral portion of the upper surface opening portion of the container body to close the upper surface opening portion of the container body, and an inner periphery of the base plate. A semiconductor device arranged on the upper surface side of the part and including a mounting substrate including a semiconductor element,
The inner peripheral portion of the base plate is formed separately from the outer peripheral portion via a gap, and the inner peripheral portion and the outer peripheral portion have a lower strength than the inner peripheral portion and the outer peripheral portion. A semiconductor device, characterized in that the semiconductor devices are connected via parts.
前記実装基板は、絶縁板を含み、その絶縁板の上側に前記半導体素子が配置されている請求項7に記載の半導体装置。 The semiconductor device according to claim 7, wherein the mounting substrate includes an insulating plate, and the semiconductor element is arranged above the insulating plate.
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JP2002270742A (en) * 2001-03-12 2002-09-20 Unisia Jecs Corp Semiconductor device
JP2005302882A (en) * 2004-04-08 2005-10-27 Nissan Motor Co Ltd Semiconductor device
JP2005302886A (en) * 2004-04-08 2005-10-27 Nissan Motor Co Ltd Semiconductor device
US20050280162A1 (en) * 2004-06-18 2005-12-22 International Business Machines Corporation Thermal interposer for thermal management of semiconductor devices
WO2014148026A1 (en) * 2013-03-21 2014-09-25 日本電気株式会社 Heat-sink structure, semiconductor device, and heat-sink mounting method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002270742A (en) * 2001-03-12 2002-09-20 Unisia Jecs Corp Semiconductor device
JP2005302882A (en) * 2004-04-08 2005-10-27 Nissan Motor Co Ltd Semiconductor device
JP2005302886A (en) * 2004-04-08 2005-10-27 Nissan Motor Co Ltd Semiconductor device
US20050280162A1 (en) * 2004-06-18 2005-12-22 International Business Machines Corporation Thermal interposer for thermal management of semiconductor devices
WO2014148026A1 (en) * 2013-03-21 2014-09-25 日本電気株式会社 Heat-sink structure, semiconductor device, and heat-sink mounting method

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