JP2020065273A - Image pickup device and imaging apparatus - Google Patents

Abstract

To provide an image pickup device and an imaging apparatus suitable for focus detection without using a high-level pixel interpolation process and a complicated optical system.SOLUTION: An image pickup device 101 comprises a first image pickup device and a second image pickup device arranged on an identical optical path on its light-incident side. A first image pickup device 103 has a first photoelectric conversion unit for photoelectrically converting light of a first color to generate an electric charge, and a second image pickup device 102 has a second photoelectric conversion unit for photoelectrically converting the complementary color light of the first color transmitted through the first photoelectric conversion unit, to generate electric charge.SELECTED DRAWING: Figure 1

Description

  The present invention relates to an image pickup device and an image pickup device, for example, a solid-state image pickup device and an electronic camera.

  Conventionally, a phase difference AF method has been known as a technique for realizing high-speed AF (autofocus) with an electronic camera. The phase-difference AF method requires a dedicated focus detection pixel, and for example, a technique is known in which the focus detection pixel is arranged in a part of the imaging pixels of one image sensor (see, for example, Patent Document 1). Further, there is known a technique of using a dedicated focus detection image pickup device which is arranged separately from the image pickup device (for example, refer to Patent Document 2). On the other hand, a technique of stacking two photoelectric conversion elements is known (for example, see Patent Document 3).

Japanese Patent Laid-Open No. 2007-282109 JP, 2007-011070, A JP, 2009-130239, A

  However, when the focus detection pixels are arranged in a part of the image pixels of the image sensor, a false signal of vertical stripes or horizontal stripes is likely to occur, and there is a problem that a high-level pixel interpolation process is required. Further, when a dedicated focus detection image pickup device is used, there is a problem that a complicated optical system for splitting incident light into an image pickup device and a focus detection image pickup device is required. Further, the stacking technology is specialized for image capturing, and focus detection and efficient color arrangement have not been considered.

  An object of the present invention is to provide an image pickup device and an image pickup device (solid-state image pickup device and electronic camera) suitable for focus detection without using a high-level pixel interpolation process or a complicated optical system.

  An imaging device as an example of the present invention includes a first photoelectric conversion unit that photoelectrically converts light of a first color to generate electric charges, and light of a complementary color of a first color that has passed through the first photoelectric conversion unit. A second photoelectric conversion unit that performs photoelectric conversion to generate electric charges.

  An image pickup apparatus as another example of the present invention includes the image pickup element described above.

  The present invention can provide an image pickup element and an image pickup apparatus (solid-state image pickup apparatus and electronic camera) suitable for focus detection without using advanced pixel interpolation processing or a complicated optical system.

3 is a diagram showing an outline of a solid-state image sensor 101. FIG. It is a figure which shows an example of a pixel arrangement. It is a figure which shows the example of a circuit of the 1st image pick-up element 102. It is a figure which shows the circuit example of the 2nd imaging element 103. It is a figure which shows the circuit example of a pixel. It is a figure which shows an example of a timing chart. It is a figure which shows the relationship of a layout structure and a cross section. It is a figure which shows the cross section AB. It is a figure which shows the cross section CD. It is a figure which shows a layout structure. FIG. 6 is a diagram showing an arrangement example of a light receiving unit of the second image sensor 103. It is a figure which shows the modification 1 of a pixel arrangement. It is a figure which shows the modification 2 of a pixel arrangement. It is a figure which shows the structural example of the electronic camera 201.

  Hereinafter, embodiments of a solid-state imaging device and an electronic camera according to the present invention will be described in detail with reference to the drawings.

  FIG. 1 is a diagram showing an outline of a solid-state imaging device 101 according to this embodiment. In FIG. 1, a solid-state image sensor 101 includes a first image sensor 102 that performs photoelectric conversion by a photodiode as in a normal solid-state image sensor, and a first image sensor 102 disposed on the same optical path on the incident light side of the first image sensor 102. And two image pickup elements 103. The second image sensor 103 is configured by an organic photoelectric film that transmits specific light and photoelectrically converts non-transmissive light, and the specific light transmitted through the second image sensor 103 is received by the first image sensor 102. Here, the first image sensor 102 and the second image sensor 103 are formed on the same semiconductor substrate, and each pixel position corresponds to one-to-one. For example, the pixel in the first row and the first column of the first image sensor 102 corresponds to the pixel in the first row and the first column of the second image sensor 103.

  FIG. 2A is a diagram showing an example of a pixel array of the second image sensor 103. In FIG. 2A, the horizontal direction is the x-axis, the vertical direction is the y-axis, and the coordinates of the pixel P are described as P (x, y). In the example of the second image sensor 103 of FIG. 2A, an organic photoelectric film for photoelectrically converting light of Mg (magenta) and Ye (yellow) is alternately arranged in each pixel in an odd row, and each pixel in an even row is arranged. Further, organic photoelectric films for photoelectrically converting light of Cy (cyan) and Mg (magenta) are alternately arranged. Then, the light that is not received by each pixel is transmitted. For example, the pixel P (1,1) photoelectrically converts Mg light and transmits Mg complementary color (G: green) light. Similarly, the pixel P (2, 1) photoelectrically converts the Ye light and transmits the light of the complementary color (B: blue) of Ye, and the pixel P (1, 2) photoelectrically converts the Cy light to Cy. The light of the complementary color (R: red) is transmitted. As will be described later in detail, each pixel of the second image sensor 103 is composed of a pair of focus detection pixels corresponding to the phase difference AF method.

  FIG. 2B is a diagram showing an example of a pixel array of the first image sensor 102. Each pixel position in FIG. 2B is the same as that in FIG. 2A. For example, the pixel (1,1) of the second image sensor 103 corresponds to the pixel (1,1) of the first image sensor 102. In FIG. 2B, the first image sensor 102 is not provided with a color filter or the like, and specific light (light of a type that is absorbed by the organic photoelectric film and is photoelectrically converted) that passes through the second image sensor 103. Photoelectric conversion of complementary color). Therefore, as shown in FIG. 2C, by the first image sensor 102, G (green) and B (blue) color components are applied to each pixel in the odd-numbered rows, and R (red) and G are applied to each pixel in the even-numbered row. An image of the (green) color component is obtained. For example, in the pixel P (1,1), an image of the G component of the complementary color of Mg of the second image sensor 103 is obtained. Similarly, an image of the B component of the complementary color of Ye is obtained at the pixel P (2,1), and an image of the R component of the complementary color of Cy is obtained at the pixel P (1,2).

  As described above, in the solid-state image sensor 101 according to the present embodiment, the second image sensor 103 configured by the organic photoelectric film serves as a conventional color filter, and the first image sensor 102 complements the complementary color of the second image sensor 103. Images can be obtained. In the example of FIG. 2, a Bayer array image is obtained from the first image sensor 102. Note that although FIG. 2 shows an example of the Bayer array, even if other arrays are provided, it is similarly realized by arranging the pixels of the first image sensor 102 and the second image sensor 103 so as to have a complementary color relationship. it can.

  In particular, in the solid-state image sensor 101 according to the present embodiment, since the organic photoelectric film is used instead of the color filter required in the conventional single-plate type image sensor, the incident light absorbed by the color filter is reduced to the first. The two image pickup elements 103 can be effectively used.

  In the solid-state image sensor 101 according to this embodiment, the image pixels are arranged in the first image sensor 102, and the focus detection pixels are evenly arranged in the second image sensor 103. There is no need to perform complicated pixel interpolation processing as in the prior art in which focus detection pixels are arranged in a part of the area, and focus detection signals are output from the second image sensor 103 and color image signals are output from the first image sensor 102. Each can be obtained independently.

  FIG. 3 is a diagram illustrating a circuit example of the first image sensor 102. In FIG. 3, the first image sensor 102 includes pixels P (x, y) arranged two-dimensionally, a vertical scanning circuit 151, a horizontal output circuit 152, and a current source PW. In the example of FIG. 3, the configuration of 4 pixels in 2 rows and 2 columns is shown for easy understanding, but actually, about 10 million pixels are two-dimensionally arranged.

  In FIG. 3, the vertical scanning circuit 151 outputs timing signals (φTx (y), φR (y), φSEL (y)) for reading signals from each pixel. For example, the timing signals φTx (1), φR (1), and φSEL (1) are given to the pixels P (1,1) and P (2,1) in the first row. Then, a signal is read out from each pixel of the vertical signal lines VLINE (1) and VLINE (2) connected to the current sources PW (1) and PW (2) arranged in each column, and the signals are read out to the horizontal output circuit 152. It is held temporarily. Then, the signal of each pixel temporarily held for each row in the horizontal output circuit 152 is sequentially output to the outside (output signal Vout). Although not shown in FIG. 3, when reading from each pixel to the horizontal output circuit 152 via the vertical signal line VLINE (x), a correlated double sampling circuit (CDS) for removing signal variation between pixels. Circuit) may be arranged.

  FIG. 4 is a diagram showing a circuit example of the second image sensor 103. In FIG. 4, the second image sensor 103 includes a pixel P (x, y) arranged two-dimensionally, a vertical scanning circuit 161, a horizontal output circuit 162, a horizontal output circuit 163, and a current source PW_A. And a current source PW_B. Note that, in the example of FIG. 4, as in the case of FIG. 3, it is composed of 4 pixels in 2 rows and 2 columns, but actually, about 10 million pixels are two-dimensionally arranged. Further, each pixel P (x, y) in FIG. 4 corresponds to each pixel P (x, y) in FIG. In particular, the second image sensor 103 has a photoelectric conversion unit formed of two organic photoelectric films, a light receiving unit PC_A (x, y) and a light receiving unit PC_B (x, y), at one pixel position, and the second image pickup device 103 is of a phase difference AF type. A pair of pixels forming a pair is formed.

  In FIG. 4, the vertical scanning circuit 161 outputs timing signals (φR_A (y), φR_B (y), φSEL_A (y), φSEL_B (y)) for reading signals from each pixel. For example, the timing signals φR_A (1) and φSEL_A (1) are given to the light receiving units PC_A (1,1) and P_A (2,1) in the first row, and the light receiving units PC_B (1,1) and P_B (2,1) are supplied. ) Are supplied with timing signals φR_B (1) and φSEL_B (1). The signals of the light receiving units PC_A (1,1) and P_A (2,1) are supplied to the vertical signal lines VLINE_A (1) connected to the current sources PW_A (1) and PW_A (2) arranged in the respective columns. And VLINE_A (2) and are temporarily stored in the horizontal output circuit_A 162. The signal of each pixel temporarily held for each row in the horizontal output circuit_A 162 is sequentially output to the outside (output signal Vout_A). Similarly, the signals of the light receiving units PC_B (1,1) and P_B (2,1) are supplied to the vertical signal lines VLINE_B (1) connected to the current sources PW_B (1) and PW_B (2) arranged in the respective columns. ) And VLINE_B (2), and temporarily held in the horizontal output circuit_B 162. The signal of each pixel temporarily held for each row in the horizontal output circuit_B 162 is sequentially output to the outside (output signal Vout_B).

Although the circuit examples of the first image sensor 102 and the second image sensor 103 have been separately described above with reference to FIGS. 3 and 4, they are actually formed on the same semiconductor substrate to form one solid-state image sensor 101. To do.
[Circuit Example of Pixel of Solid-State Image Sensor 101]
Next, a circuit example of a pixel of the solid-state image sensor 101 will be described. FIG. 5 is a diagram showing a circuit example of one pixel P (x, y) arranged two-dimensionally. In FIG. 5, the pixel P (x, y) includes a photodiode PD, a transfer transistor Tx, a reset transistor R, an output transistor SF, and a selection transistor SEL as a circuit for forming the first image sensor 102. Have. The photodiode PD accumulates electric charge according to the amount of incident light, and the transfer transistor Tx transfers the electric charge accumulated in the photodiode PD to the floating diffusion region (FD portion) on the output transistor SF side. The output transistor SF constitutes a current follower PW and a source follower via the selection transistor SEL, and outputs an electric signal corresponding to the charges accumulated in the FD section as an output signal OUT to the vertical signal line VLINE. The reset transistor R resets the electric charge in the FD section to the power supply voltage Vcc.

  In addition, as a circuit for configuring the second image sensor 103, the light receiving unit PC including an organic photoelectric film, reset transistors R_A and R_B, output transistors SF_A and SF_B, and selection transistors SEL_A and SEL_B are included. As described with reference to FIG. 2A, the light receiving portion PC formed of the organic photoelectric film converts into an electric signal according to the amount of non-transmitted light, and the current sources PW_A and PW_B and the source follower via the selection transistors SEL_A and SEL_B, respectively. Are output to the vertical signal lines VLINE_A and VLINE_B as output signals OUT_A and OUT_B via the output transistors SF_A and SF_B. The reset transistors R_A and R_B reset the output signal of the light receiving unit PC to the reference voltage Vref. Further, a high voltage Vpc is applied for the operation of the organic photoelectric film. Here, each transistor is composed of a MOS_FET.

  Here, the operation of the circuit of FIG. 5 will be described with reference to the timing chart of FIG. FIG. 6 is a diagram showing an example of the timing signals of FIG. FIG. 6A is a diagram showing the operation timing of the first image sensor 102. First, at timing T1, the selection signal φSEL becomes “High” and the selection transistor SEL is turned on. Next, at timing T2, the reset signal φR becomes “High”, the power supply voltage Vcc is reset in the FD section, and the output signal OUT also becomes the reset level. Then, after the reset signal φR becomes “Low”, the transfer signal φTx becomes “High” at the timing T3, the charge accumulated in the photodiode PD is transferred to the FD portion, and the output signal OUT corresponds to the charge amount. Begins to change and stabilizes. Then, the transfer signal φTx becomes “Low”, and the signal level of the output signal OUT read from the pixel to the vertical signal line VLINE is determined. Then, the output signal OUT of each pixel read to the vertical signal line VLINE is temporarily held in the horizontal output circuit_152 for each row, and then output from the solid-state imaging element 101 as an output signal Vout. In this way, the signal is read from each pixel of the first image sensor 102.

  FIG. 6B is a diagram showing the operation timing of the second image sensor 103. First, at timing T11, the selection signal φSEL_A (or φSEL_B) becomes “High”, and the selection transistor SEL_A (or SEL_B) is turned on. Next, at timing T12, the reset signal φR_A (or φR_B) becomes “High”, and the output signal OUT_A (or φOUT_B) also becomes the reset level. Then, at timing T13, immediately after the reset signal φR_A (or φR_B) becomes “Low”, the charge accumulation of the light receiving portion PC by the organic photoelectric film is started, and the output signal OUT_A (or the output signal OUT_B) is changed according to the charge amount. Change. Then, after being temporarily held in the horizontal output circuit_A 162 (or the horizontal output circuit_B 163) for each row, the output signal Vout_A (or the output signal Vout_B) is output from the solid-state imaging device 101. In this way, the signal is read from each pixel of the second image sensor 103.

  FIG. 7A is an example of a semiconductor layout of the solid-state image sensor 101. Note that FIG. 7A corresponds to each of the pixels P (1,1) to P (2,2) in FIGS. 2 and 4 described above.

  FIG. 7B is a cross-sectional view of the pixel P (1,1) and the pixel (2,1) in FIG. 7A taken along the cutting line AB in the horizontal direction. Further, FIG. 8B is a diagram drawn so that the pixel position of the cutting line AB can be easily understood, and the portions of the light receiving portion PC_A (1,1) and the light receiving portion P_A (2,1) in FIG. 4 are cut. To do. FIG. 8A is an enlarged view of FIG. 7B. Pixels P (1,1) at the same position in the first image sensor 102 and the second image sensor 103 have the same microlens ML (1, The subject light incident from 1) is received. Although the wiring layer 301 has a three-layer structure in FIG. 8A, it may have a two-layer structure. Then, the output signal of the second image sensor 103 is taken out from the signal output end 302 via the wiring layer 301. Separation layers 303 and 304 are arranged on both sides of the signal output end 302. The photodiodes PD (1,1) and PD (2,1) are arranged with the separation layers 303 and 304 separated.

  FIG. 7C is a cross-sectional view of the pixel P (2,1) and the pixel (2,2) in FIG. 7A taken along the cutting line CD in the vertical direction. Further, FIG. 9B is a diagram drawn so that the pixel position of the cutting line CD is easy to understand, and the light receiving portions PC_A (2,1), PC_B (2,1), PC_A (2,2) of FIG. ) And PC_B (2,2) part. FIG. 9A is an enlarged view of FIG. 7C, in which the pixel P (2,1) and the pixel P (2,2) at the same position of the first image sensor 102 and the second image sensor 103 are The subject light incident from each of the same microlenses ML (2,1) and ML (2,2) is received. Here, the difference from FIG. 8B is that the pixel P (2,1) of the second image sensor 103 is divided into a light receiving unit PC_A (2,1) and a light receiving unit PC_B (2,1). That is, the pixel P (2,2) is divided into a light receiving portion PC_A (2,2) and a light receiving portion PC_B (2,2). Then, the light receiving portion PC_A (2,1) and the light receiving portion PC_B (2,1) respectively receive the images of the pupil position of the optical system forming a pair, and focus detection by the phase difference AF method can be performed. Similarly, the light receiving unit PC_A (2,2) and the light receiving unit PC_B (2,2) respectively receive images at the pupil position of the optical system forming a pair. Since the phase difference AF method is a well-known technique, detailed description thereof will be omitted.

  Here, in FIG. 9B, the wiring layer 301 of FIG. 8B has a wiring layer 301A and a wiring layer 301B, and the wiring layer 301A is the light receiving portion PC_A (2,1) of the organic photoelectric film. The signal is output to the signal output end 305A, and the wiring layer 301B outputs the signal of the light receiving portion PC_B (2,1) of the organic photoelectric film to the signal output end 305B. In the wiring layer 301 of FIG. 8B, only one wiring layer 301A and one wiring layer 301B are visible because they overlap each other. Similarly, the signal of the light receiving portion PC_A (2,2) of the organic photoelectric film of the pixel P (2,2) is output to the signal output end 306A, and the signal of the light receiving portion PC_B (2,2) is output to the signal output end 306B. Is output. Then, read circuits such as an output transistor, a selection transistor, and a reset transistor are arranged in the read circuit 307, and the signal of each pixel is output from the solid-state imaging device 101 to the outside.

  FIG. 10 is an enlarged view of the layout diagram of the pixel P (1,1) in FIG. In FIG. 10, a circuit arranged around the photodiode PD is an NMOS type transistor in which a hatched portion is a gate electrode and white portions on both sides of the gate electrode are n regions. In FIG. 10, the charges accumulated in the photodiode PD of the first image sensor 102 are transferred to the FD section when the transfer signal φTx is applied to the gate electrode of the transfer transistor. The FD portion is connected to the gate electrode of the output transistor SF and converted into an electric signal, and when the selection signal φSEL is applied to the gate electrode of the selection transistor SEL, it is read out to the vertical signal line VLINE. When the reset signal φR is applied to the gate electrode of the reset transistor R, the electric charge in the FD portion is reset to the power supply voltage Vcc.

  On the other hand, in FIG. 10, the electric signal output from the transparent electrode of the light receiving portion PC_A (1,1) of the organic photoelectric film is connected to the gate electrode of the output transistor SF_A, and the selection signal φSEL_A is applied to the gate electrode of the selection transistor SEL_A. When given, it is read to the vertical signal line VLINE_A. Similarly, the electric signal output from the transparent electrode of the light receiving unit PC_B (1,1) is connected to the gate electrode of the output transistor SF_B, and when the selection signal φSEL_B is applied to the gate electrode of the selection transistor SEL_B, the vertical signal line is supplied. Read to VLINE_B. When the reset signal φR_A (or φR_B) is applied to the gate electrode of the reset transistor R_A (or R_B), the signal voltage of the light receiving unit PC_A (1,1) (or PC_B (1,1)) becomes the reference voltage Vref. Reset. In the organic photoelectric film, a high voltage Vpc for taking out an electric signal according to the amount of incident light is applied to the transparent electrode on the incident light side from the opposing transparent electrodes.

  As described above, the solid-state image sensor 101 according to the present embodiment includes the first image sensor 102 that performs photoelectric conversion by the conventional photodiode and the second image sensor 103 that performs photoelectric conversion by the organic photoelectric film. An image signal can be acquired from the first image sensor 102, and a focus detection signal corresponding to the phase difference AF method can be acquired from the second image sensor 103.

  As a result, the solid-state imaging device 101 does not need to dispose the focus detection pixels in a part of the image pixels as in the conventional case, and the deterioration of the image quality due to the false signal of the vertical stripes or the horizontal stripes and the advanced pixel interpolation processing can be performed. It becomes unnecessary. Further, since the first image pickup device 102 for image and the second image pickup device 103 for focus detection are arranged so as to be laminated so as to use the incident light of the same microlens, the incident light is imaged as in the conventional case. And a complex optical system for dividing into a focus detection image sensor are not required. In particular, the solid-state image sensor 101 according to this embodiment uses two image sensors, the first image sensor 102 and the second image sensor 103, but does not require an optical device such as a prism or a mirror, and thus constitutes a camera. In this case, the arrangement and design of the optical system is easy. Further, in a two-plate type image pickup device using a prism, a mirror, etc., adjustment of the optical path length up to two image pickup elements is essential, but the solid-state image pickup element 101 according to the present embodiment has one optical path. , No adjustment is required.

  Furthermore, the second image sensor 103 and the first image sensor 102 can detect color components having a complementary color relationship to each other, and the organic photoelectric film of the second image sensor 103 can also be used as a color filter of the first image sensor 102. Therefore, the incident light can be efficiently utilized without wasting it.

  As described above, the solid-state imaging device 101 according to the present embodiment can realize the phase difference AF method capable of high-speed operation without using sophisticated pixel interpolation processing or a complicated optical system.

  In the above example, as shown in FIG. 11A, the light receiving units PC_A (x, y) and PC_B (x, y), which form a pair corresponding to the phase difference AF method, are connected to the second image sensor 103. The pixel P (x, y) is arranged, but as another method, as shown in FIG. 11 (b), the light receiving unit PC_A (x, y) or the light receiving unit PC_B (x, y) is provided only on one side. It may be arranged in one pixel P (x, y). Alternatively, as shown in FIG. 11C, focus detection pixels in various directions such as the vertical direction, the horizontal direction, and the oblique direction may be mixed. In any case, the solid-state image sensor 101 according to the present embodiment captures an image signal with the first image sensor 102 and acquires a focus detection signal with the second image sensor 103. Focus detection by high-speed phase-difference AF can be performed at any position within the shooting screen without affecting the image quality.

  Here, in the second image sensor 103, as described with reference to FIG. 2, since pixels corresponding to the three colors of Mg, Ye, and Cy are mixed, focus detection signals obtained from pixels of different color components are generated. It may be different. Therefore, when performing focus detection, focus detection using the phase difference AF method may be performed using focus detection signals obtained from pixels of the same color component. For example, in the case of FIG. 2A, only focus detection signals obtained from Mg pixels having a large number of pixels (pixels in odd columns in odd rows and pixels in even columns in even rows) are used. Alternatively, the error between pixels corresponding to the three colors of Mg, Ye, and Cy may be measured in advance and the error correction may be performed when the phase difference AF process is performed.

  Further, the output signal of the second image sensor 103 may be used not only for focus detection but also for white balance control.

(Modification 1)
FIG. 12 is a diagram showing a modified example 1 of the pixel color array described in FIG. In the example of FIG. 2, the organic photoelectric film of the second image sensor 103 is made to correspond to the three colors of Mg, Ye, and Cy, and the first image sensor 102 can detect the image signals of the three colors of R, G, and B. However, as shown in FIG. 12, the organic photoelectric film of the second image sensor 103 is made to correspond to the three colors of R, G, and B, and the three colors of Mg, Ye, and Cy are used for the first image sensor 102. The image signal may be detected. Even in this case, the color components photoelectrically converted by the first image sensor 102 and the second image sensor 103 have a complementary color relationship with each other.

(Modification 2)
FIG. 13 is a diagram showing a second modification of the pixel color array described in FIG. In the example of FIG. 2, a pair of light receiving units corresponding to the phase difference AF method is arranged in each pixel of the second image sensor 103, but in the modification of FIG. 13, a part of the pixels of the second image sensor 103 is arranged. A pair of light receiving portions corresponding to the phase difference AF method is arranged. As a result, the circuit scale of the solid-state image sensor 101 can be reduced.

(Example of electronic camera)
Next, FIG. 14 shows an example of an electronic camera 201 equipped with the solid-state image sensor 101. 14, an electronic camera 201 includes an optical system 202, a solid-state image sensor 101, an image buffer 203, an image processing unit 204, a control unit 205, a display unit 206, a memory 207, an operation unit 208, and It is composed of a memory card IF 209.

  The optical system 202 forms a subject image on the solid-state image sensor 101. As described above, the solid-state image sensor 101 includes the first image sensor 102 and the second image sensor 103, and the image signal captured by the first image sensor 102 is captured in the image buffer 203. The focus detection signal acquired by the second image sensor 103 is input to the control unit 205. The control unit 205 controls the entire electronic camera 201 according to a user operation performed by the operation unit 208. For example, when the release button of the operation unit 208 is pressed halfway, the control unit 205 controls the focus position of the optical system 202 by performing focus detection by the phase difference AF method based on the focus detection signal acquired from the second image sensor 103. . Then, when the user fully presses the release button of the operation unit 208, the control unit 205 captures an image captured by the first image sensor 102 after focus control into the image buffer 203. Further, the image captured in the image buffer 203 is subjected to white balance processing, color interpolation processing, contour enhancement processing, gamma correction processing, etc. by the image processing unit 204, and is displayed on the display unit 206 or via the memory card IF 209. Stored in the memory card 209a.

  As described above, by mounting the solid-state imaging device 101 according to the present embodiment on the electronic camera 201, a complicated pixel interpolation process is performed by the image processing unit 204, or a complicated optical system 202 is used to split incident light. A phase-difference AF method capable of high-speed operation can be realized without the need for a configuration.

  Although the solid-state imaging device according to the present invention has been described in each embodiment by way of example, the solid-state imaging device can be implemented in various other forms without departing from the spirit or the main features thereof. Therefore, the embodiments described above are merely examples in all respects, and should not be limitedly interpreted. The present invention is shown by the claims, and the present invention is not bound by the specification. Furthermore, all modifications and changes belonging to the equivalent scope of the claims are within the scope of the present invention.

101 ... Solid-state image sensor; 102 ... First image sensor; 103 ... Second image sensor; 151, 161 ... Vertical scanning circuit; 152 ... Horizontal output circuit; 162 ... Horizontal output Circuit_A; 163 ... Horizontal output circuit_B; 201 ... Electronic camera; 202 ... Optical system; 203 ... Image buffer; 204 ... Image processing unit; 205 ... Control unit; 206. ..Display unit; 207 ... Memory; 208 ... Operation unit; 209 ... Memory card IF; 209a ... Memory card; P ... Pixel; PC_A, PC_B ... Light receiving unit; PD ..Photodiodes; PW, PW_A, PW_B ... Current sources; SEL, SEL_A, SEL_B ... Selection transistors; SF, SF_A, SF_B ... Output transistors; R, R_A, R_B ... Reset transistor; Tx ... Transfer transistor; φSEL, φSEL_A, φSEL_B ... Selection signal; φR, φR_A, φR_B ... Reset signal; φTx ... Transfer signal; ML ... Microlens; VLINE ... Vertical signal line

Claims (11)

A first photoelectric conversion unit that photoelectrically converts light of a first color to generate electric charges;
A second photoelectric conversion unit that photoelectrically converts the light of the complementary color of the first color that has passed through the first photoelectric conversion unit to generate an electric charge;
An image pickup device including. The image sensor according to claim 1,
A first output unit for outputting the electric charge generated by the first photoelectric conversion unit, a second output unit, and a third output unit;
The first photoelectric conversion unit is an image sensor provided between the first output unit and the second output unit and the third output unit. The image sensor according to claim 2,
At least one of the first output unit, the second output unit, and the third output unit is an image sensor that outputs a signal used for focus detection. The image sensor according to claim 2 or 3,
At least one of the first output unit and the second output unit is an image sensor that outputs a signal used for image generation. The image sensor according to any one of claims 2 to 4,
The first output section, the second output section, and the third output section are electrodes that are electrodes. The image sensor according to any one of claims 1 to 5,
The first photoelectric conversion unit photoelectrically converts magenta, yellow, or cyan light,
The second photoelectric conversion unit is an image sensor that photoelectrically converts green, blue, or red light. The image sensor according to any one of claims 1 to 5,
The first photoelectric conversion unit photoelectrically converts green, blue, or red light,
The second photoelectric conversion unit is an image sensor that photoelectrically converts magenta, yellow, or cyan light. The image sensor according to any one of claims 1 to 7,
A third photoelectric conversion unit that photoelectrically converts the light of the second color to generate electric charges;
An image pickup device comprising: a fourth photoelectric conversion unit that photoelectrically converts the light of the complementary color of the second color that has passed through the third photoelectric conversion unit to generate electric charges. The image sensor according to any one of claims 1 to 8,
The said 1st photoelectric conversion part is an image sensor comprised with an organic photoelectric film. The image sensor according to any one of claims 1 to 9,
The second photoelectric conversion unit is an image sensor provided on a silicon substrate.   An imaging device comprising the imaging element according to claim 1.

Images