JP6217794B2 - Solid-state imaging device and electronic camera - Google Patents

Description

  The present invention relates to a solid-state imaging device and an electronic camera.

  Conventionally, a phase difference AF method is known as a technique for realizing high-speed AF (autofocus) with an electronic camera. The phase difference AF method requires a dedicated focus detection pixel, and for example, a technique is known in which focus detection pixels are arranged in a part of the imaging pixels of one image sensor (see, for example, Patent Document 1). Further, a technique using a dedicated focus detection image sensor arranged separately from the image sensor is known (for example, see Patent Document 2). On the other hand, a technique of stacking two photoelectric conversion elements is known (see, for example, Patent Document 3).

JP 2007-282109 A JP 2007-011070 A JP 2009-130239 A

  However, when focus detection pixels are arranged in a part of the image pixels of the image sensor, there is a problem that false signals of vertical stripes and horizontal stripes are likely to be generated, and advanced pixel interpolation processing is required. Further, when a dedicated focus detection image sensor is used, there is a problem that a complicated optical system is required for dividing incident light into an image sensor and a focus detection image sensor. Furthermore, the technique of stacking and arranging is specialized for image capturing, and focus detection and efficient color arrangement have not been considered.

  An object of the present invention is to provide a solid-state imaging device and an electronic camera suitable for focus detection without using advanced pixel interpolation processing or a complicated optical system.

The solid-state imaging device as an example of the present invention includes a first photoelectric conversion unit that photoelectrically converts the first color of incident light and transmits the remaining light, and a second photoelectric light that remains after photoelectric conversion. A first photoelectric conversion unit provided on a first substrate, a third photoelectric conversion unit configured to photoelectrically convert light of a third color transmitted through the first photoelectric conversion unit, And a second imaging element provided on a second substrate having a fourth photoelectric conversion unit that photoelectrically converts light of a fourth color that has passed through the second photoelectric conversion unit. The first substrate and the second substrate are stacked, and the first color light and the third color light, and the second color light and the fourth color light have a complementary color relationship. One of the first color light and the third color light is green component light, and the other of the first color light and the third color light is magenta component light.

  Another example of the present invention is an electronic camera including the above-described solid-state imaging device, an optical system that projects incident light onto the first imaging element and the second imaging element, and the first imaging element or the second imaging element. An image pickup unit that performs focus control of the optical system using a focus detection signal output from the first image pickup device and acquires an image using an image signal output from the first image pickup device or the second image pickup device.

  The present invention can provide a solid-state imaging device and an electronic camera suitable for focus detection without using advanced pixel interpolation processing or a complicated optical system.

1 is a diagram showing an outline of a solid-state image sensor 101. It is a figure which shows an example of pixel arrangement | positioning. 3 is a diagram illustrating a circuit example of a first image sensor 102. FIG. 4 is a diagram illustrating a circuit example of a second image sensor 103. FIG. It is a figure which shows the circuit example of a pixel. It is a figure which shows an example of a timing chart. It is a figure which shows the relationship between a layout structure and a cross section. It is a figure which shows the cross section AB. It is a figure which shows the cross section CD. It is a figure which shows a layout structure. It is a figure which shows the example of arrangement | positioning of the light-receiving part of the 2nd image pick-up element 103. FIG. It is a figure which shows the modification 1 of pixel arrangement | positioning. It is a figure which shows the modification 2 of pixel arrangement | positioning. 2 is a diagram illustrating a configuration example of an electronic camera 201. FIG.

  Hereinafter, embodiments of a solid-state imaging device and an electronic camera according to the present invention will be described in detail with reference to the drawings.

  FIG. 1 is a diagram illustrating an outline of a solid-state imaging device 101 according to the present embodiment. In FIG. 1, a solid-state image sensor 101 includes a first image sensor 102 that performs photoelectric conversion using a photodiode as in a normal solid-state image sensor, and a first image sensor 102 that is disposed on the same optical path on the incident light side of the first image sensor 102. And two imaging elements 103. The second image sensor 103 is configured by an organic photoelectric film that transmits specific light and photoelectrically converts non-transmitted light. The specific light transmitted through the second image sensor 103 is received by the first image sensor 102. Here, the first image sensor 102 and the second image sensor 103 are formed on the same semiconductor substrate, and each pixel position corresponds to one to one. For example, the pixel in the first row and the first column of the first image sensor 102 corresponds to the pixel in the first row and the first column of the second image sensor 103.

  FIG. 2A is a diagram illustrating an example of a pixel array of the second image sensor 103. In FIG. 2A, the horizontal direction is the x-axis, the vertical direction is the y-axis, and the coordinates of the pixel P are expressed as P (x, y). In the example of the second image sensor 103 of FIG. 2A, organic photoelectric films that photoelectrically convert light of Mg (magenta) and Ye (yellow) are alternately arranged in each pixel in odd rows, and each pixel in even rows. Further, organic photoelectric films for photoelectrically converting light of Cy (cyan) and Mg (magenta) are alternately arranged. Light that is not received by each pixel is transmitted. For example, the pixel P (1,1) photoelectrically converts Mg light and transmits light of the complementary color (G: green) of Mg. Similarly, the pixel P (2,1) photoelectrically converts Ye light and transmits the complementary color (B: blue) of Ye, and the pixel P (1,2) photoelectrically converts Cy light to Cy. The light of the complementary color (R: red) is transmitted. As will be described in detail later, each pixel of the second image sensor 103 is composed of a pair of focus detection pixels corresponding to the phase difference AF method.

  FIG. 2B is a diagram illustrating an example of a pixel array of the first image sensor 102. Each pixel position in FIG. 2B is the same as that in FIG. For example, the pixel (1, 1) of the second image sensor 103 corresponds to the pixel (1, 1) of the first image sensor 102. In FIG. 2B, the first image sensor 102 is not provided with a color filter or the like, and the specific light that is transmitted through the second image sensor 103 (the light that is absorbed and photoelectrically converted by the organic photoelectric film) is transmitted. (Complementary color) is photoelectrically converted. Accordingly, as shown in FIG. 2C, the first image sensor 102 causes G (green) and B (blue) color components to be applied to the pixels in the odd rows, and R (red) and G to the pixels in the even rows. An image of the (green) color component is obtained. For example, in the pixel P (1, 1), an image of the G component of the complementary color of Mg of the second image sensor 103 is obtained. Similarly, an image of the complementary B component of Ye is obtained at the pixel P (2, 1), and an image of the R component of the complementary color Cy is obtained at the pixel P (1, 2).

  As described above, in the solid-state imaging device 101 according to the present embodiment, the second imaging device 103 configured by an organic photoelectric film serves as a conventional color filter, and the first imaging device 102 complements the second imaging device 103. An image can be obtained. In the example of FIG. 2, an image with a Bayer array is obtained from the first image sensor 102. In FIG. 2, an example of the Bayer array is shown, but even in other arrays, the same can be realized by arranging the pixels of the first image sensor 102 and the second image sensor 103 so as to have a complementary color relationship. it can.

  In particular, in the solid-state imaging device 101 according to the present embodiment, since an organic photoelectric film is used instead of the color filter that is necessary for the conventional single-plate imaging device, incident light that has been absorbed by the color filter is first detected. The two imaging elements 103 can be used effectively.

  In the solid-state image sensor 101 according to the present embodiment, the image pixels are arranged on the first image sensor 102, and the focus detection pixels are evenly arranged on the second image sensor 103. Therefore, the image pixels There is no need to perform complicated pixel interpolation processing as in the prior art in which focus detection pixels are arranged in a part of the image sensor, a focus detection signal is output from the second image sensor 103, and a color image signal is output from the first image sensor 102. Each can be obtained independently.

  FIG. 3 is a diagram illustrating a circuit example of the first image sensor 102. In FIG. 3, the first image sensor 102 includes a pixel P (x, y), a vertical scanning circuit 151, a horizontal output circuit 152, and a current source PW that are two-dimensionally arranged. In the example of FIG. 3, the configuration of 4 pixels in 2 rows and 2 columns is shown for easy understanding, but in reality, about 10 million pixels are arranged two-dimensionally.

  In FIG. 3, a vertical scanning circuit 151 outputs timing signals (φTx (y), φR (y), φSEL (y)) for reading out signals from each pixel. For example, timing signals φTx (1), φR (1), and φSEL (1) are given to the pixels P (1,1) and P (2,1) in the first row. Then, signals are read from each pixel of the vertical signal lines VLINE (1) and VLINE (2) connected to the current sources PW (1) and PW (2) arranged in each column, and are output to the horizontal output circuit 152. Temporarily held. Then, the signal of each pixel temporarily held in the horizontal output circuit 152 for each row is sequentially output to the outside (output signal Vout). Although not shown in FIG. 3, a correlated double sampling circuit (CDS) for removing signal variations between pixels when reading from each pixel to the horizontal output circuit 152 via the vertical signal line VLINE (x). Circuit) may be arranged.

  FIG. 4 is a diagram illustrating a circuit example of the second image sensor 103. In FIG. 4, the second image sensor 103 includes two-dimensionally arranged pixels P (x, y), a vertical scanning circuit 161, a horizontal output circuit 162, a horizontal output circuit 163, a current source PW_A, And a current source PW_B. In the example of FIG. 4, similarly to FIG. 3, the pixel is composed of 4 pixels of 2 rows and 2 columns, but in reality, about 10 million pixels are arranged two-dimensionally. Each pixel P (x, y) in FIG. 4 corresponds to each pixel P (x, y) in FIG. In particular, the second image sensor 103 has a photoelectric conversion unit made up of two organic photoelectric films, a light receiving unit PC_A (x, y) and a light receiving unit PC_B (x, y), at one pixel position. A pair of pixels is formed.

  In FIG. 4, the vertical scanning circuit 161 outputs timing signals (φR_A (y), φR_B (y), φSEL_A (y), φSEL_B (y)) for reading signals from each pixel. For example, timing signals φR_A (1) and φSEL_A (1) are given to the light receiving portions PC_A (1,1) and P_A (2,1) in the first row, and the light receiving portions PC_B (1,1) and P_B (2,1) are supplied. ) Are given timing signals φR_B (1) and φSEL_B (1). The signals of the light receiving portions PC_A (1, 1) and P_A (2, 1) are respectively connected to the vertical signal lines VLINE_A (1) connected to the current sources PW_A (1) and PW_A (2) arranged in each column. And VLINE_A (2) and temporarily held in the horizontal output circuit_A162. The signal of each pixel temporarily held in the horizontal output circuit_A 162 for each row is sequentially output to the outside (output signal Vout_A). Similarly, the signals of the light receiving portions PC_B (1,1) and P_B (2,1) are transmitted to the vertical signal lines VLINE_B (1) connected to the current sources PW_B (1) and PW_B (2) arranged in each column, respectively. ) And VLINE_B (2) and temporarily held in the horizontal output circuit_B162. The signal of each pixel temporarily held in the horizontal output circuit_B 162 for each row is sequentially output to the outside (output signal Vout_B).

As described above, the circuit examples of the first image sensor 102 and the second image sensor 103 have been described separately with reference to FIGS. 3 and 4, but in actuality, they are formed on the same semiconductor substrate and constitute one solid-state image sensor 101. To do.
[Example of Pixel Circuit of Solid-State Image Sensor 101]
Next, a circuit example of the pixel of the solid-state image sensor 101 will be described. FIG. 5 is a diagram illustrating a circuit example of one pixel P (x, y) arranged two-dimensionally. In FIG. 5, a pixel P (x, y) includes a photodiode PD, a transfer transistor Tx, a reset transistor R, an output transistor SF, and a selection transistor SEL as circuits for configuring the first image sensor 102. Have The photodiode PD accumulates charges according to the amount of incident light, and the transfer transistor Tx transfers the charges accumulated in the photodiode PD to the floating diffusion region (FD portion) on the output transistor SF side. The output transistor SF forms a current source PW and a source follower via the selection transistor SEL, and outputs an electric signal corresponding to the electric charge accumulated in the FD section as an output signal OUT to the vertical signal line VLINE. The reset transistor R resets the charge in the FD portion to the power supply voltage Vcc.

  In addition, as a circuit for configuring the second image sensor 103, a light receiving unit PC using an organic photoelectric film, reset transistors R_A and R_B, output transistors SF_A and SF_B, and selection transistors SEL_A and SEL_B are included. As described with reference to FIG. 2A, the light receiving unit PC using the organic photoelectric film converts the signal into an electric signal corresponding to the amount of non-transmitted light, and supplies the current source PW_A and PW_B to the source follower via the selection transistors SEL_A and SEL_B. Are output to the vertical signal lines VLINE_A and VLINE_B as output signals OUT_A and OUT_B through the output transistors SF_A and SF_B, respectively. The reset transistors R_A and R_B reset the output signal of the light receiving unit PC to the reference voltage Vref. Further, a high voltage Vpc is applied for the operation of the organic photoelectric film. Here, each transistor is composed of a MOS_FET.

  Here, the operation of the circuit of FIG. 5 will be described with reference to the timing chart of FIG. FIG. 6 is a diagram illustrating an example of the timing signal of FIG. FIG. 6A shows the operation timing of the first image sensor 102. First, at timing T1, the selection signal φSEL becomes “High”, and the selection transistor SEL is turned on. Next, at timing T2, the reset signal φR becomes “High”, the FD section resets the power supply voltage Vcc, and the output signal OUT also becomes the reset level. Then, after the reset signal φR becomes “Low”, the transfer signal φTx becomes “High” at the timing T3, the charge accumulated in the photodiode PD is transferred to the FD portion, and the output signal OUT is changed according to the charge amount. It begins to change and stabilizes. Then, the transfer signal φTx becomes “Low”, and the signal level of the output signal OUT read from the pixel to the vertical signal line VLINE is determined. The output signal OUT of each pixel read to the vertical signal line VLINE is temporarily held for each row in the horizontal output circuit_152, and then output from the solid-state imaging device 101 as the output signal Vout. In this way, a signal is read from each pixel of the first image sensor 102.

  FIG. 6B shows the operation timing of the second image sensor 103. First, at timing T11, the selection signal φSEL_A (or φSEL_B) becomes “High”, and the selection transistor SEL_A (or SEL_B) is turned on. Next, at timing T12, the reset signal φR_A (or φR_B) becomes “High”, and the output signal OUT_A (or φOUT_B) also becomes the reset level. Then, immediately after the reset signal φR_A (or φR_B) becomes “Low” at the timing T13, the charge accumulation of the light receiving portion PC by the organic photoelectric film is started, and the output signal OUT_A (or the output signal OUT_B) is changed according to the amount of charge. Change. Then, after being temporarily stored in the horizontal output circuit_A 162 (or horizontal output circuit_B 163) for each row, it is output from the solid-state imaging device 101 as the output signal Vout_A (or output signal Vout_B). In this way, a signal is read from each pixel of the second image sensor 103.

  FIG. 7A is an example of a semiconductor layout of the solid-state image sensor 101. 7A corresponds to each pixel P (1, 1) to pixel P (2, 2) in FIGS. 2 and 4 described above.

  FIG. 7B is a cross-sectional view when the pixel P (1,1) and the pixel (2,1) of FIG. 7A are cut in the horizontal direction along the cutting line AB. Further, FIG. 8B is a diagram drawn so that the pixel position of the cutting line AB is easily understood, and the light receiving unit PC_A (1,1) and the light receiving unit P_A (2,1) of FIG. 4 are cut. To do. FIG. 8A is an enlarged view of FIG. 7B, and the pixel P (1,1) at the same position of the first image sensor 102 and the second image sensor 103 is the same microlens ML (1,1). 1. Subject light incident from 1) is received. In FIG. 8A, the wiring layer 301 has a three-layer structure, but may have a two-layer structure. Then, the output signal of the second image sensor 103 is taken out from the signal output end 302 via the wiring layer 301. Note that separation layers 303 and 304 are arranged on both sides of the signal output end 302. Further, the photodiodes PD (1,1) and PD (2,1) are arranged with the separation layers 303 and 304 therebetween.

  FIG. 7C is a cross-sectional view when the pixel P (2,1) and the pixel (2,2) of FIG. 7A are cut in the vertical direction along the cutting line CD. Further, FIG. 9B is a diagram drawn so that the pixel position of the cutting line CD is easily understood. ) And PC_B (2, 2). FIG. 9A is an enlarged view of FIG. 7C, and the pixel P (2,1) and the pixel P (2,2) at the same position of the first image sensor 102 and the second image sensor 103 are as follows. Subject light incident from the same microlens ML (2,1) and ML (2,2) is received. Here, the part different from FIG. 8B is that the pixel P (2,1) of the second image sensor 103 is divided into a light receiving part PC_A (2,1) and a light receiving part PC_B (2,1). The pixel P (2, 2) is divided into a light receiving part PC_A (2, 2) and a light receiving part PC_B (2, 2). Then, the light receiving unit PC_A (2, 1) and the light receiving unit PC_B (2, 1) can respectively receive the image of the pupil position of the paired optical system and perform focus detection by the phase difference AF method. Similarly, the light receiving unit PC_A (2, 2) and the light receiving unit PC_B (2, 2) each receive an image of the pupil position of the paired optical system. Since the phase difference AF method is a well-known technique, a detailed description thereof is omitted.

  Here, in FIG. 9B, the wiring layer 301 in FIG. 8B has a wiring layer 301A and a wiring layer 301B, and the wiring layer 301A is the light receiving portion PC_A (2, 1) of the organic photoelectric film. The signal is output to the signal output terminal 305A, and the wiring layer 301B outputs the signal of the light receiving portion PC_B (2, 1) of the organic photoelectric film to the signal output terminal 305B. In the wiring layer 301 of FIG. 8B, only one is visible because the wiring layer 301A and the wiring layer 301B overlap. Similarly, the signal of the light receiving portion PC_A (2, 2) of the organic photoelectric film of the pixel P (2, 2) is output to the signal output end 306A, and the signal of the light receiving portion PC_B (2, 2) is output to the signal output end 306B. Is output. In the readout circuit 307, readout circuits such as an output transistor, a selection transistor, and a reset transistor are arranged, and a signal of each pixel is output from the solid-state imaging device 101 to the outside.

  FIG. 10 is an enlarged view of the layout diagram of the pixel P (1,1) in FIG. In FIG. 10, the circuit arranged around the photodiode PD shows an NMOS transistor in which the hatched portion is a gate electrode, and the white portions on both sides of the gate electrode are n regions. In FIG. 10, the charge accumulated in the photodiode PD of the first image sensor 102 is transferred to the FD section when the transfer signal φTx is applied to the gate electrode of the transfer transistor. The FD portion is connected to the gate electrode of the output transistor SF and converted into an electric signal. When the selection signal φSEL is applied to the gate electrode of the selection transistor SEL, it is read out to the vertical signal line VLINE. When the reset signal φR is applied to the gate electrode of the reset transistor R, the charge in the FD portion is reset to the power supply voltage Vcc.

  On the other hand, in FIG. 10, the electric signal output from the transparent electrode of the light receiving portion PC_A (1, 1) of the organic photoelectric film is connected to the gate electrode of the output transistor SF_A, and the selection signal φSEL_A is applied to the gate electrode of the selection transistor SEL_A. When given, it is read out to the vertical signal line VLINE_A. Similarly, the electrical signal output from the transparent electrode of the light receiving unit PC_B (1, 1) is connected to the gate electrode of the output transistor SF_B, and when the selection signal φSEL_B is applied to the gate electrode of the selection transistor SEL_B, the vertical signal line Read to VLINE_B. When the reset signal φR_A (or φR_B) is applied to the gate electrode of the reset transistor R_A (or R_B), the signal voltage of the light receiving unit PC_A (1, 1) (or PC_B (1, 1)) is set to the reference voltage Vref. Reset. In the organic photoelectric film, a high voltage Vpc for taking out an electrical signal corresponding to the amount of incident light from the opposing transparent electrode is applied to the transparent electrode on the incident light side.

  As described above, the solid-state imaging device 101 according to the present embodiment includes the first imaging device 102 that performs photoelectric conversion using a conventional photodiode and the second imaging device 103 that performs photoelectric conversion using an organic photoelectric film. The image signal can be acquired from the first image sensor 102, and the focus detection signal corresponding to the phase difference AF method can be acquired from the second image sensor 103.

  As a result, the solid-state imaging device 101 does not need to arrange focus detection pixels in a part of the image pixels as in the prior art, and image quality degradation and advanced pixel interpolation processing due to false signals of vertical and horizontal stripes can be performed. It becomes unnecessary. In addition, since the first image pickup device 102 for image and the second image pickup device 103 for focus detection are arranged so as to use the incident light of the same microlens, the incident light is used for the image pickup device for image as in the past. And a complicated optical system for dividing into a focus detection image sensor. In particular, the solid-state imaging device 101 according to the present embodiment uses a first imaging device 102 and a second imaging device 103, and does not require an optical device such as a prism or a mirror. In this case, the arrangement and design of the optical system are easy. In addition, in a two-plate image pickup apparatus using a prism, a mirror, or the like, adjustment of the optical path length to two image sensors is essential, but the solid-state image sensor 101 according to the present embodiment has one optical path. No adjustment is necessary.

  Furthermore, the second image sensor 103 and the first image sensor 102 can detect color components that are complementary to each other, and the organic photoelectric film of the second image sensor 103 can also be used as the color filter of the first image sensor 102. Thus, the incident light can be efficiently used without wasting it.

  As described above, the solid-state imaging device 101 according to the present embodiment can realize a phase difference AF method capable of high-speed operation without using advanced pixel interpolation processing or a complicated optical system.

  In the above example, as shown in FIG. 11A, a pair of light receiving units PC_A (x, y) and PC_B (x, y) corresponding to the phase difference AF method is provided for each of the second imaging elements 103. The pixel P (x, y) is arranged, but as another method, as shown in FIG. 11B, the light receiving part PC_A (x, y) or the light receiving part PC_B (x, y) is arranged only on one side. You may make it arrange | position to one pixel P (x, y). Alternatively, as shown in FIG. 11C, focus detection pixels in various directions such as a vertical direction, a horizontal direction, and an oblique direction may be mixed. In any case, the solid-state imaging device 101 according to the present embodiment captures the image signal with the first imaging device 102 and acquires the focus detection signal with the second imaging device 103. Focus detection by high-speed phase difference AF can be performed at any position in the shooting screen without affecting the image quality.

  Here, as described with reference to FIG. 2, the second image sensor 103 includes pixels corresponding to the three colors of Mg, Ye, and Cy. Therefore, focus detection signals obtained from pixels of different color components are received. Different cases are possible. Therefore, when performing focus detection, focus detection by the phase difference AF method may be performed using a focus detection signal obtained from pixels of the same color component. For example, in the case of FIG. 2A, only focus detection signals obtained from Mg pixels having a large number of pixels (odd column pixels for odd rows and even column pixels for even rows) are used. Alternatively, an error between pixels corresponding to the three colors of Mg, Ye, and Cy may be measured in advance, and error correction may be performed when the phase difference AF process is performed.

  Further, the output signal of the second image sensor 103 may be used not only for focus detection but also for white balance control.

(Modification 1)
FIG. 12 is a diagram illustrating a first modification of the pixel color arrangement described in FIG. 2. In the example of FIG. 2, the organic photoelectric film of the second image sensor 103 corresponds to the three colors of Mg, Ye, and Cy, and the first image sensor 102 can detect the image signals of the three colors R, G, and B. However, as shown in FIG. 12, the organic photoelectric film of the second image sensor 103 is made to correspond to the three colors R, G, and B, and the first image sensor 102 uses the three colors of Mg, Ye, and Cy. The image signal may be detected. Even in this case, the color components photoelectrically converted by the first image sensor 102 and the second image sensor 103 have a complementary color relationship with each other.

(Modification 2)
FIG. 13 is a diagram illustrating a second modification of the pixel color arrangement described in FIG. 2. In the example of FIG. 2, a pair of light receiving units corresponding to the phase difference AF method is arranged in each pixel of the second image sensor 103. However, in the modification of FIG. A pair of light receiving portions corresponding to the phase difference AF method is arranged. Thereby, the circuit scale of the solid-state image sensor 101 can be reduced.

(Example of electronic camera)
Next, an example of the electronic camera 201 on which the solid-state image sensor 101 is mounted is shown in FIG. In FIG. 14, an electronic camera 201 includes an optical system 202, a solid-state imaging device 101, an image buffer 203, an image processing unit 204, a control unit 205, a display unit 206, a memory 207, an operation unit 208, And a memory card IF 209.

  The optical system 202 forms a subject image on the solid-state image sensor 101. As described above, the solid-state image sensor 101 includes the first image sensor 102 and the second image sensor 103, and an image signal captured by the first image sensor 102 is taken into the image buffer 203, A focus detection signal acquired by the second image sensor 103 is input to the control unit 205. The control unit 205 controls the entire electronic camera 201 in accordance with a user operation by the operation unit 208. For example, when the release button of the operation unit 208 is pressed halfway, the control unit 205 controls the focus position of the optical system 202 by performing focus detection using the phase difference AF method based on the focus detection signal acquired from the second image sensor 103. . When the user fully presses the release button of the operation unit 208, the control unit 205 captures an image captured by the first image sensor 102 after focus control into the image buffer 203. Further, the image captured in the image buffer 203 is subjected to white balance processing, color interpolation processing, contour enhancement processing, gamma correction processing, and the like by the image processing unit 204 and is displayed on the display unit 206 or via the memory card IF 209. Are stored in the memory card 209a.

  As described above, by mounting the solid-state imaging device 101 according to the present embodiment on the electronic camera 201, the image processing unit 204 performs advanced pixel interpolation processing, or the optical system 202 divides incident light. A phase difference AF method capable of high-speed operation without requiring a configuration can be realized.

  The solid-state imaging device according to the present invention has been described by way of example in each embodiment, but can be implemented in various other forms without departing from the spirit or the main features thereof. Therefore, the above-described embodiment is merely an example in all respects and should not be interpreted in a limited manner. The present invention is defined by the claims, and the present invention is not limited to the text of the specification. Further, all modifications and changes belonging to the equivalent scope of the claims are within the scope of the present invention.

DESCRIPTION OF SYMBOLS 101 ... Solid-state image sensor; 102 ... First image sensor; 103 ... Second image sensor; 151, 161 ... Vertical scanning circuit; 152 ... Horizontal output circuit; 163 ... Horizontal output circuit_B; 201 ... Electronic camera; 202 ... Optical system; 203 ... Image buffer; 204 ... Image processing unit; 205 ... Control unit; ··· Display unit; 207 ··· Memory; 208 ··· Operation unit; 209 ··· Memory card IF; 209a · · · Memory card; P · · · Pixel; PC_A, PC_B ... .. Photodiode; PW, PW_A, PW_B ... Current source; SEL, SEL_A, SEL_B ... Selection transistor; SF, SF_A, SF_B ... Output transistor; R, R_A, R_B Reset transistor; Tx ... Transfer transistor; φSEL, φSEL_A, φSEL_B ... Selection signal; φR, φR_A, φR_B ... Reset signal; φTx ... Transfer signal; ML ... Microlens; Vertical signal line

Claims (9)

Of the incident light, a first photoelectric conversion unit that photoelectrically converts light of the first color and transmits the remaining light; a second photoelectric conversion unit that photoelectrically converts light of the second color and transmits the remaining light; A first imaging device provided on a first substrate having
A third photoelectric conversion unit that photoelectrically converts light of the third color that has passed through the first photoelectric conversion unit; and a fourth photoelectric conversion unit that photoelectrically converts light of the fourth color that has passed through the second photoelectric conversion unit. A second imaging device provided on a second substrate having;
With
The first substrate and the second substrate are stacked and arranged,
The first color light and the third color light, and the second color and the fourth color light and the light of state, and are related in each complementary color,
One of the first color light and the third color light is a green component light, and the other of the first color light or the third color light is a magenta component light . The solid-state imaging device according to claim 1,
The solid-state imaging device, wherein the first color light is green component light, and the second color light is red component light or blue component light. The solid-state imaging device according to claim 1,
The solid-state imaging device, wherein the third color light is green component light, and the fourth color light is red component light or blue component light. The solid-state imaging device according to any one of claims 1 to 3,
The first substrate is a solid-state imaging device which is an organic photoelectric film. The solid-state imaging device according to any one of claims 1 to 4,
The solid-state imaging device, wherein the second substrate is a silicon substrate. The solid-state imaging device according to claim 5,
A first drive circuit for reading image signals from the first photoelectric conversion unit and the second photoelectric conversion unit;
A second drive circuit for reading image signals from the third photoelectric conversion unit and the fourth photoelectric conversion unit;
Further comprising
The first drive circuit and the second drive circuit are disposed on the silicon substrate and are independently driven. The solid-state imaging device according to any one of claims 1 to 6,
The first image sensor has a plurality of pixels having at least one of the first photoelectric conversion unit and the second photoelectric conversion unit,
The second imaging element has a plurality of pixels having at least one of the third photoelectric conversion unit and the fourth photoelectric conversion unit,
The pixel arrangement of the first image sensor corresponds to the pixel arrangement of the second image sensor,
A solid-state imaging device in which focus detection pixels are provided on at least some of the pixels of the first imaging device or at least some of the pixels of the second imaging device. The solid-state imaging device according to claim 7,
The solid-state imaging device in which the focus detection pixels are evenly arranged on all the pixels of the first imaging device or the second imaging device. An electronic camera equipped with the solid-state imaging device according to claim 7 or 8,
An optical system for projecting incident light onto the first image sensor and the second image sensor;
Focus control of the optical system is performed by a focus detection signal output from the first image sensor or the second image sensor, and an image is acquired by an image signal output from the first image sensor or the second image sensor. An imaging unit;
With electronic camera.

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