JP2020053675A - Substrate processing apparatus - Google Patents

Abstract

To provide a substrate processing apparatus capable of reducing the footprint of the substrate processing apparatus and improving the throughput of the substrate processing apparatus.SOLUTION: A substrate processing apparatus 1 includes an indexer unit 21, a hierarchy 33, and a control unit 107. Each of the layers includes a first mounting unit 51, a processing unit 41, and a main transport mechanism 36. The indexer unit includes carrier mounting units 22A and 22B and a transport unit 25. The transfer unit performs a supply operation of transferring a substrate W from a carrier C placed on the carrier mounting unit 22A to the first mounting unit. A first transport mechanism 26 further performs an interlayer transport operation for transporting a substrate between two first mounting units provided at different levels.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a substrate processing apparatus that performs processing on a substrate. Substrates include, for example, semiconductor wafers, liquid crystal display substrates, organic EL (Electroluminescence) substrates, FPD (Flat Panel Display) substrates, optical display substrates, magnetic disk substrates, magneto-optical disk substrates, photomask substrates , A solar cell substrate.

  Patent Literature 1 discloses a coating and developing apparatus (1). The coating and developing apparatus (1) includes a carrier block (S1) and a processing block (S2). The carrier block (S1) includes a mounting table (11) and a transfer arm (13). The mounting table (11) mounts the carrier (C). The transfer arm (13) carries the wafer (W).

  The processing block (S2) includes six unit blocks (B1-B6). Each of the unit blocks (B1-B6) includes a main arm (A1-A6), a liquid processing module, and a heating module. The main arms (A1-A6) transport the wafer (W) to the liquid processing module and the heating module, respectively.

  The processing block (S2) includes a shelf unit (U7). The shelf unit (U7) includes a plurality of modules. The modules (BU1, CPL0) are arranged at a height position accessible by the transfer arm (13). The modules (CPL1-CPL3) are arranged at heights accessible by the main arm (A1). The modules (CPL7-CPL8) are arranged at a height position accessible by the main arm (A3). The modules (CPL14 to CPL15) are arranged at a height position accessible by the main arm (A6).

  The processing block (S2) includes a transfer arm (30). The transfer arm (30) transfers the wafer (W) between the modules of the shelf unit (U7).

  The coating and developing device (1) operates, for example, as follows. The transfer arm (13) transfers the wafer (W) from the carrier (C) to the module (BU1). The transfer arm (30) transfers the wafer (W) from the module (BU1) to the module (CPL1). The main arm (A1) conveys from the module (CPL1) to the liquid processing module and the heating module of the unit block (B1). Thereafter, the main arm (A1) transports the wafer (W) to the module (CPL3). The transfer arm (30) transfers the wafer (W) from the module (CPL3) to the module (CPL7). The main arm (A3) conveys from the module (CPL7) to the liquid processing module and the heating module of the unit block (B3). After the wafer (W) is further transferred to the unit block (B5) or the like, the wafer (W) is transferred to the module (CPL15). The transfer arm (30) transfers the wafer (W) from the module (CPL15) to the module (CPL0). The transfer arm (13) transfers the wafer (W) from the module (CPL0) to the carrier (C).

JP 2012-33863 A

  However, the coating and developing device (1) disclosed in Patent Document 1 has the following problem. The transfer arm (13) accesses the module (BU1, CPL0). However, each of the main arms (A1-A5) cannot access the module (BU1, CPL0). Therefore, the main arm (A1-A5) cannot directly take the wafer (W) placed on the module (BU1) by the transfer arm (13). The transfer arm (13) cannot directly take the wafer (W) placed on the module of the shelf unit (U7) by the main arm (A1-A5). Therefore, in order to transfer the wafer (W) between the transfer arm (13) and the main arm (A1-A5), it is necessary to transfer the wafer (W) between the modules of the shelf unit (U7). . Therefore, the wafer (W) cannot be efficiently transferred between the transfer arm (13) and the main arm (A1-A5). Therefore, it is difficult to further improve the throughput of the coating and developing apparatus (1).

  The main arm (A1) accesses the modules (CPL1-CPL3). However, the other main arms (A2-A5) cannot access the modules (CPL1-CPL3). Therefore, in order to transfer the wafer (W) between the main arm (A1) and the other main arms (A2-A5), it is necessary to transfer the wafer (W) between the modules of the shelf unit (U7). is there. For this reason, it is necessary to provide the transfer arm (30) for transferring the wafer (W) between the modules of the shelf unit (U7). Therefore, the footprint (installation area) of the coating and developing apparatus (1) is large.

  The present invention has been made in view of such circumstances, and has as its object to provide a substrate processing apparatus capable of reducing the footprint of the substrate processing apparatus and improving the throughput of the substrate processing apparatus. And

The present invention has the following configuration to achieve such an object.
That is, the present invention is a substrate processing apparatus, comprising: an indexer unit, a plurality of hierarchies arranged vertically, and a control unit that controls the indexer unit and the hierarchies. Each of the indexer unit includes a first placement unit on which a substrate is placed, a processing unit that processes the substrate, and a main transport mechanism that transports the substrate to the first placement unit and the processing unit. Comprises a carrier mounting portion for mounting a carrier, and a transport portion for transporting a substrate between the carrier mounted on the carrier mounting portion and the first mounting portion, wherein the indexer portion A transporting operation of transporting a substrate from the carrier placed on the carrier placing portion to the first placing portion, and placing the substrate on the carrier placing portion from the first placing portion. The collection operation of transporting the substrate to the carrier A first transport mechanism that performs any one of the first transport mechanism and the first transport mechanism of the indexer unit, wherein the first transport mechanism further transports a substrate between two first mounting units provided in different hierarchies. This is a substrate processing apparatus that performs an operation.

  The first transport mechanism of the indexer unit performs at least one of a supply operation and a collection operation. When the first transport mechanism of the indexer unit performs the supply operation, the substrate transported by the first transport mechanism of the indexer unit on the first placement unit can be directly taken by the main transport mechanism. Therefore, the substrate can be efficiently transported between the first transport mechanism of the indexer unit and the main transport mechanism. For this reason, the throughput of the substrate processing apparatus can be suitably improved. When the first transport mechanism of the indexer unit performs the collecting operation, the first transport mechanism of the indexer unit can directly take the substrate placed on the first placement unit by the main transport mechanism. Therefore, the substrate can be efficiently transported between the first transport mechanism of the indexer unit and the main transport mechanism. For this reason, the throughput of the substrate processing apparatus can be suitably improved.

  The first transport mechanism of the indexer unit further performs an interlayer transport operation. Therefore, it is not necessary to separately provide a transfer mechanism (for example, the transfer arm (30) of Patent Document 1) for transferring the substrate between two different levels exclusively. Therefore, the footprint (installation area) of the substrate processing apparatus can be suitably reduced.

  As described above, according to the above-described substrate processing apparatus, the footprint of the substrate processing apparatus can be reduced, and the throughput of the substrate processing apparatus can be improved.

  In the above-described substrate processing apparatus, the processing units of one or more layers perform a first process on a substrate, and the processing units of another one or more layers differ from the first process on a substrate. Performing a second process, the first transport mechanism of the indexer unit includes the first placement unit of the hierarchy where the first process is performed, and the first placement of the hierarchy where the second process is performed. It is preferable to transfer the substrate to and from the unit. The first processing and the second processing can be efficiently performed on the substrate.

  In the substrate processing apparatus described above, the first process includes a first pre-exposure process performed before the exposure process, and the second process is different from the first pre-exposure process performed before the exposure process. It is preferable to include a second pre-exposure treatment. The first pre-exposure process and the second pre-exposure process can be efficiently performed on the substrate.

  In the above-described substrate processing apparatus, it is preferable that the first processing includes a first liquid processing, and the second processing includes a second liquid processing different from the first liquid processing. The first liquid processing and the second liquid processing can be efficiently performed on the substrate.

  In the substrate processing apparatus described above, the first processing includes forming an anti-reflection film for forming an anti-reflection film on the substrate, forming a resist film on the substrate, forming a resist film on the substrate, and forming a protection film for protecting the resist film on the substrate. The second process includes a part of a protective film forming process, a developing process of developing the substrate, and a cleaning process of cleaning the substrate, wherein the second process includes the antireflection film forming process, the resist film forming process, and the protective film forming process. It is preferable to include another part of the developing process and the cleaning process. In other words, in the above-described substrate processing apparatus, the first processing includes forming an anti-reflection film for forming an anti-reflection film on the substrate, forming a resist film on the substrate, and protecting the resist film on the substrate. The second process includes one or more and four or less of a protective film forming process for forming a protective film, a developing process for developing the substrate, and a cleaning process for cleaning the substrate, wherein the second process includes the antireflection film forming process, the resist film The method includes one or more and four or less of a forming process, the protective film forming process, the developing process, and the cleaning process, and when the first process includes the anti-reflective film forming process, the second process includes the anti-reflective process. When the first process does not include the film forming process and the first process includes the resist film forming process, the second process does not include the resist film forming process and the first process includes the protective film forming process. The second process does not include the protective film forming process, and when the first process includes the developing process, the second process does not include the developing process, and when the first process includes the cleaning process, Preferably, the second treatment does not include the cleaning treatment. For example, the first process may include an anti-reflective coating process, and the second process may include a resist film forming process. According to this, the antireflection film processing and the resist film formation processing can be efficiently performed on the substrate. For example, the first process may include an antireflection film process, a resist film forming process, and a protective film forming process, and the second process may include a developing process. According to this, the antireflection film processing, the resist film formation processing, the protection film formation processing, and the development processing can be efficiently performed on the substrate. As described above, at least two or more of the anti-reflection film processing, the resist film formation processing, the protection film formation processing, the development processing, and the cleaning processing can be efficiently performed on the substrate.

  In the above-described substrate processing apparatus, the first process includes a process of forming an anti-reflection film on the substrate, the second process includes a process of forming a resist film on the substrate, and the first transfer of the indexer unit. It is preferable that the mechanism transports the substrate from the first mounting portion of the hierarchy where the first processing is performed to the first mounting portion of the hierarchy where the second processing is performed. An antireflection film forming process can be performed on the substrate, and then a resist film forming process can be performed on the substrate. Further, the anti-reflection film processing and the resist film formation processing can be efficiently performed on the substrate.

  In the above-described substrate processing apparatus, the first process includes a process of forming an anti-reflection film on the substrate and a process of forming a resist film on the substrate, and the second process includes forming a protective film on the substrate to protect the resist film. Forming the first transport mechanism of the indexer unit, from the first mounting unit of the hierarchy where the first processing is performed, to the first mounting of the hierarchy where the second processing is performed. It is preferable to transfer the substrate to the section. The anti-reflection film forming process and the resist film forming process can be performed on the substrate, and then the protective film forming process can be performed on the substrate. Further, the anti-reflection film processing, the resist film formation processing, and the protection film formation processing can be efficiently performed on the substrate.

  In the above-described substrate processing apparatus, the processing unit of the layer where the second processing is performed further performs a process of developing a substrate, and the transport unit of the indexer unit is configured to perform the processing of the second processing. Preferably, the substrate is transferred from the first mounting portion to the carrier mounted on the carrier mounting portion. The development processing can be efficiently performed on the substrate. Further, the substrate subjected to the development processing can be efficiently transported to the carrier. Here, it is preferable that the second process does not include a process of developing the substrate. The second processing preferably does not include the post-exposure processing performed after the exposure processing.

  In the substrate processing apparatus described above, the transport unit of the indexer unit may transfer a substrate from the carrier mounted on the carrier mounting unit to the first mounting unit of the hierarchy where the first processing is performed. It is preferable to carry. The substrate can be efficiently transported from the carrier to the level where the first processing is performed.

  In the above-described substrate processing apparatus, it is preferable that the number of the layers on which the first processing is performed is two or more, and the number of the layers on which the second processing is performed is two or more. The first treatment can be performed on the substrate in two or more levels. In two or more levels, the substrate can be subjected to a second treatment. Therefore, the throughput of the substrate processing apparatus can be suitably improved.

  In the above-described substrate processing apparatus, the processing unit of one or more other layers different from the layer where the first processing is performed and the layer where the second processing is performed may perform a third processing on the substrate. Performing, the third process includes a process of developing a substrate, wherein the transport unit of the indexer unit is mounted on the carrier mounting unit from the first mounting unit of the hierarchy where the third process is performed. Preferably, the substrate is transported to the carrier on which it is placed. The development processing can be efficiently performed on the substrate. Further, the substrate subjected to the development processing can be efficiently transported to the carrier.

  In the above-described substrate processing apparatus, it is preferable that the number of the layers on which the third processing is performed is two or more. A third process can be performed on the substrate in more than one level. Therefore, the throughput of the substrate processing apparatus can be suitably improved.

  In the above-described substrate processing apparatus, each of the layers includes a second mounting section on which a substrate is mounted, and the substrate processing apparatus includes an interface section, and the interface section includes the second section. A mounting section, and a transport section for transporting the substrate between the exposure apparatus separate from the substrate processing apparatus, wherein the transport section of the interface section is provided with two of the second Preferably, the substrate is not transported between the two mounting sections. The transport unit of the interface unit does not perform the interlayer transport operation. Therefore, the transport unit of the interface unit can efficiently transport the substrate between the story and the exposure machine.

  In the above-described substrate processing apparatus, the first mounting unit may include a first feed mounting unit on which the transfer unit of the indexer unit mounts the substrate, and a first transfer mounting unit on which the main transfer mechanism mounts the substrate. And a return mounting portion. The transport operation of the transport unit of the indexer unit can be simplified. Therefore, the transport section of the indexer section can transport the substrate between the carrier and the floor more efficiently. Similarly, the transfer operation of the main transfer mechanism can be simplified. Therefore, the main transport mechanism can transport the substrate more efficiently.

  In the above-described substrate processing apparatus, the transport unit of the indexer unit simultaneously places two substrates on the first feed mounting unit, and places at least four or more substrates on the first feed mounting unit. It is preferable that the first feed mounting portion is configured to be mountable. At least four or more substrates can be mounted on the first feed mounting portion. Therefore, the transport unit of the indexer unit can simultaneously place the first and second substrates on the first feed mounting unit, and thereafter can simultaneously place the third and fourth substrates on the first feed mounting unit. . While the transport unit of the indexer unit places the third and fourth substrates on the first transport mounting unit, the main transport mechanism removes the first and second substrates from the first transport mounting unit. be able to. Even if the transport unit and the main transport mechanism of the indexer unit simultaneously access the first feed mounting unit, the transport unit of the indexer unit that places the substrate on the first feed mounting unit and the first feed mounting unit There is no danger of interference with the main transport mechanism that takes the substrate from. This is because, for example, the position of the first feed receiver on which the first and second substrates are placed is different from the position of the first feed receiver on which the third and fourth substrates are placed. Therefore, after that, the transport unit of the indexer unit can place the fifth and sixth substrates on the first feed mounting unit (more specifically, the same position as the position where the first and second substrates are mounted). . As described above, the transfer unit of the indexer unit can repeat the operation of mounting the substrate on the first feed mounting unit without delay.

  In the above-described substrate processing apparatus, the transport unit of the indexer unit can simultaneously take two substrates from the first return placement unit and place at least four or more substrates on the first return placement unit. Preferably, the first return mounting portion is configured. At least four or more substrates can be placed on the first return placement part. Therefore, the transport unit of the indexer unit can take the first and second substrates from the first return placement unit at the same time, and then take the third and fourth substrates from the first return placement unit at the same time. While the transfer unit of the indexer unit is taking the third and fourth substrates from the first return mounting unit, the main transfer mechanism transfers the fifth and sixth substrates to the first feed mounting unit (more specifically, , The same position as the position where the first and second substrates are mounted). Even if the transport unit and the main transport mechanism of the indexer unit simultaneously access the first return placement unit, the transport unit of the indexer unit that places the substrate on the first return placement unit and the first return placement unit There is no danger of interference with the main transport mechanism that takes the substrate from. For example, the position of the first return placement portion on which the third and fourth substrates are placed is different from the position of the first return placement portion on which the fifth and sixth substrates are placed. Therefore, thereafter, the transport unit of the indexer unit can remove the fifth and sixth substrates from the first return placement unit. As described above, the transfer unit of the indexer unit can repeat the operation of taking the substrate from the first return placement unit without any delay.

  In the substrate processing apparatus described above, the first transport mechanism of the indexer unit performs one of the supply operation and the collection operation, does not perform the other of the supply operation and the collection operation, and performs the transfer operation of the indexer unit. Preferably, the apparatus further includes a second transport mechanism that performs the other of the supply operation and the recovery operation without performing the one of the supply operation and the recovery operation. Since the transport section of the indexer section includes the second transport mechanism, the transport section of the indexer section can transport the substrate more efficiently. The first transport mechanism of the indexer performs one of a supply operation and a recovery operation, and the second transport mechanism of the transporter of the indexer performs the other of the supply operation and the recovery operation. For this reason, the transport unit of the indexer unit can suitably perform both the supply operation and the collection operation. Since the first transport mechanism of the indexer unit does not perform the other of the supply operation and the collection operation, the operation of the first transport mechanism of the indexer unit can be simplified. Since the second transport mechanism of the indexer unit does not perform either the supply operation or the recovery operation, the operation of the second transport mechanism of the indexer unit can be simplified.

  In the above-described substrate processing apparatus, it is preferable that the second transport mechanism of the indexer unit further performs the interlayer transport operation. The substrate can be transported more efficiently between two different levels.

  In the above-described substrate processing apparatus, a layer through which a substrate passes last among the layers is defined as a final layer, and the transfer unit of the indexer unit is mounted on the carrier mounting unit from the first mounting unit of the final layer. The substrate processing apparatus transports a substrate to the placed carrier, and the substrate processing apparatus includes a carrier retreating section for placing the carrier at a position retreated from the carrier placing section, and a carrier retreating section and the carrier retreating section. A carrier transport unit that transports the carrier between the control unit, wherein the control unit detects a payout operation in which the main transport mechanism of the final hierarchy places a substrate on the first placement unit of the final hierarchy. Preferably, the operation timing of the carrier transport unit is determined based on a detection result of the payout operation of the main transport mechanism of the last layer. The first mounting portion of the last layer is a place where the substrate is finally mounted before the substrate is carried into the carrier. The control unit detects a payout operation of the main transport mechanism provided at the last level. According to the detection result of the payout operation of the final layer main transport mechanism, it is possible to specify the time when the final layer main transport mechanism actually places the substrate on the first mounting portion. The control unit determines the operation timing of the carrier transport unit based on the detection result of the payout operation of the main transport mechanism of the last hierarchy. Therefore, the carrier transport unit can always transport the carrier at an appropriate timing. As a result, the collection operation by the transport unit of the indexer unit can be performed without delay. For example, there is no possibility that the collection operation by the transport unit of the indexer unit is delayed due to the delay of the carrier transport by the carrier transport unit. In this way, the collection operation by the transport unit of the indexer unit and the carrier transport operation by the carrier transport unit can be suitably linked in time.

  In the above-described substrate processing apparatus, the control unit may control a substrate to be loaded into the carrier mounted on the carrier retreat unit based on a detection result of the payout operation of the main transport mechanism of the last level. It is determined whether or not the substrate is to be loaded on the first mounting portion of the final hierarchy, and the substrate to be loaded into the carrier mounted on the carrier retracting portion is the first mounting portion of the final hierarchy. Preferably, when the control unit determines that the carrier is placed on the carrier, the control unit starts the operation of the carrier transport unit that transports the carrier from the carrier retreat unit to the carrier mounting unit. Before the transfer unit of the indexer unit starts the collecting operation, the carrier transfer unit can surely mount the carrier into which the substrate is to be loaded on the carrier mounting unit. As a result, the collection operation by the transport unit of the indexer unit can be performed without delay.

  The present invention is also a substrate processing method, wherein a supply step of transporting a substrate from a carrier to at least one of a plurality of layers, and processing of the substrate while transporting the substrate in each of the plurality of layers. A processing step; an inter-layer transfer step of transferring a substrate between two different levels, and a collection step of transferring a substrate from at least one of the plurality of levels to the carrier, wherein the supply step and the collection At least one of the steps and the interlayer transfer step are a substrate processing method executed by the same one transfer mechanism.

  At least one of the supplying step and the collecting step is performed by one transport mechanism. When the supply step is performed by one transport mechanism, the substrate can be transported efficiently from the carrier to the floor. Therefore, the processing steps can be executed efficiently. Therefore, the throughput of the substrate processing can be suitably improved. When the collection process is performed by one transport mechanism, the substrate can be efficiently transported from the floor to the carrier. Therefore, the processing steps can be executed efficiently. Therefore, the throughput of the substrate processing can be suitably improved.

  The interlayer transport step is performed by one transport mechanism that performs at least one of the supply step and the recovery step. That is, one transport mechanism executes at least one of the supply step and the recovery step and the interlayer transport step. Therefore, it is not necessary to separately provide a transfer mechanism (for example, the transfer arm (30) of Patent Document 1) for transferring the substrate between two different levels exclusively. Therefore, a space for executing the substrate processing method can be suitably reduced.

  According to the present invention, the footprint of the substrate processing apparatus can be reduced, and the throughput of the substrate processing apparatus can be improved.

FIG. 2 is a plan view of the substrate processing apparatus according to the first embodiment. It is a left view which shows the structure of the left part of a substrate processing apparatus. It is a left view which shows the structure of the center part of the substrate processing apparatus in the width direction. It is a right view which shows the structure of the right part of a substrate processing apparatus. It is a front view of an indexer part. FIG. 3 is a front view showing an internal configuration of an indexer unit. It is a front view of a processing block. FIGS. 8A and 8B are enlarged side views of the first mounting portion. It is a rear view of the front part of an interface part. It is a rear view of the rear part of an interface part. It is a figure which shows the cycle operation of the 1st conveyance mechanism of an indexer part typically. It is a figure which shows the cycle operation of the 2nd conveyance mechanism of an indexer part typically. It is a figure which shows the outline of the conveyance path of a board | substrate typically. FIG. 2 is a diagram schematically illustrating elements of the substrate processing apparatus 1 through which a substrate passes. FIG. 3 is a side view of a first transport mechanism and a main transport mechanism of a first placement unit and an indexer unit. It is a figure which shows operation | movement of a stocker part and an indexer part typically. It is a top view of the substrate processing device of a 2nd embodiment. It is a left view which shows the structure of the left part of a substrate processing apparatus. 19 (a), 19 (b), and 19 (c) are diagrams schematically illustrating the outline of the substrate transfer path. It is a left side view showing the composition of the left part of the substrate processing device concerning a 1st modification. 21 (a), 21 (b), and 21 (c) are diagrams schematically illustrating the outline of the substrate transfer path. 22 (a), 22 (b), and 22 (c) are diagrams schematically illustrating the outline of the substrate transfer path. It is a left side view showing the composition of the left part of the substrate processing device concerning a 2nd modification. 24 (a), 24 (b), and 24 (c) are diagrams schematically illustrating the outline of the substrate transfer path. It is a left side view showing the composition of the left part of the substrate processing device concerning a 3rd modification. 26 (a), 26 (b), and 26 (c) are diagrams schematically illustrating the outline of the substrate transfer path. It is a left side view showing the composition of the left part of the substrate processing device concerning a 4th modification. 28 (a), 28 (b), and 28 (c) are diagrams schematically showing the outline of the substrate transfer path.

  Hereinafter, a substrate processing apparatus of the present invention will be described with reference to the drawings.

[First Embodiment]
<Overview of substrate processing equipment>
FIG. 1 is a plan view of the substrate processing apparatus according to the first embodiment. The substrate processing apparatus 1 according to the first embodiment performs a series of processes on a substrate (for example, a semiconductor wafer) W.

  The substrate W is, for example, a semiconductor wafer, a liquid crystal display substrate, an organic EL (Electroluminescence) substrate, an FPD (Flat Panel Display) substrate, an optical display substrate, a magnetic disk substrate, a magneto-optical disk substrate, and a photomask. Substrate, solar cell substrate. The substrate W has a thin flat plate shape. The substrate W has a substantially circular shape in plan view.

  The substrate processing apparatus 1 includes a stocker unit 11, an indexer unit 21, a processing block 31, and an interface unit 71. The stocker unit 11 stores a plurality of carriers C. The stocker unit 11 conveys the carrier C to the indexer unit 21. The carrier C houses a plurality of substrates W. The carrier C is, for example, a FOUP (front opening unified pod).

  The indexer unit 21 transports the substrate W from the carrier C to the processing block 31. The indexer unit 21 carries the substrate W from the processing block 31 into the carrier C.

  The processing block 31 performs processing on the substrate W while transporting the substrate W.

  The interface unit 71 transports the substrate W between the processing block 31 and the exposure machine EXP. Exposure machine EXP is not an element of substrate processing apparatus 1. The exposure machine EXP is an external device of the substrate processing apparatus 1. The exposure machine EXP performs exposure processing on the substrate W.

  The stocker unit 11, the indexer unit 21, the processing block 31, and the interface unit 71 are arranged so as to be arranged in a line in this order. The stocker unit 11 is connected to the indexer unit 21. The indexer unit 21 is connected to the processing block 31. The processing block 31 is connected to the interface unit 71. The interface unit 71 is connected to the exposure machine EXP.

  The direction in which the stocker unit 11, the indexer unit 21, the processing block 31, and the interface unit 71 are arranged is referred to as "front-back direction X". In the front-rear direction X, a direction from the interface unit 71 to the stocker unit 11 is referred to as “forward”. The direction opposite to the front is called "rear". A horizontal direction orthogonal to the front-rear direction X is referred to as “width direction Y” or “side”. One direction of the “width direction Y” is appropriately referred to as “rightward”. The direction opposite to the right is called “left”. The vertical direction is called “vertical direction Z”. The vertical direction Z is orthogonal to the front-rear direction X and orthogonal to the width direction Y. In each figure, front, rear, right, left, upper, and lower are appropriately shown for reference.

  The stocker unit 11, indexer unit 21, processing block 31, and interface unit 71 will be described below.

<Stocker unit 11>
Please refer to FIG. FIG. 2 is a left side view illustrating the configuration of the left part of the substrate processing apparatus 1. FIG. 3 is a left side view illustrating a configuration of a central portion of the substrate processing apparatus 1 in the width direction Y. FIG. 4 is a right side view illustrating the configuration of the right part of the substrate processing apparatus 1.

  The stocker unit 11 includes an outer wall 12 and a plurality (for example, two) of shelves 13. The outer wall 12 is arranged on the front of the stocker unit 11. The shelf 13 is supported on the outer wall 12. The shelf 13 is arranged between the outer wall 12 and the indexer unit 21. The shelf 13 is arranged behind the outer wall 12. The shelves 13 are arranged so as to be arranged in the vertical direction Z.

  The shelf 13 has a substantially horizontal plate shape. A plurality of carriers C are placed on the shelf 13. The shelf 13 extends in the width direction Y. The length of the shelf 13 in the width direction Y is larger than the length of the shelf 13 in the front-rear direction X. The carriers C are placed on the shelf 13 so as to be arranged in the width direction Y.

  The carrier C can be classified into several types according to the status of the carrier C. For example, a carrier C (hereinafter, referred to as “the former carrier C”) transferred between the stocker unit 11 and an external transport mechanism (not shown) is referred to as a “carrier C”. Call). Here, the external transport mechanism is an external device of the substrate processing apparatus 1. The external transport mechanism is, for example, an OHT (Overhead Hoist Transfer). The former carrier C can be further classified into a carrier C that the stocker unit 11 receives from the external transport mechanism and a carrier C that the stocker unit 11 transfers to the external transport mechanism. The latter carrier C can be further classified into a carrier C that accommodates an unprocessed substrate W, a carrier C that does not accommodate a substrate W, and a carrier C that accommodates a processed substrate W.

  The carrier C may be placed at different positions on the shelf 13 for each of the above-described situations or classifications of the carrier C. For example, the shelf 13 may include a load port on which the former carrier C is placed. The load port is located at a position accessible by the external transport mechanism. The load port may include an input load port and an output load port. The carrier C received by the stocker unit 11 from the external transport mechanism is placed on the input load port. The carrier C that the stocker unit 11 transfers to the external transport mechanism is placed on the output load port. For example, the shelf 13 may include a storage unit on which the latter carrier C is exclusively placed. The storage unit is preferably arranged at a position where the external transport mechanism cannot access. The storage unit may further include a first storage unit on which the carrier C containing the unprocessed substrate W is exclusively placed. The storage unit may include a second storage unit on which the carrier C not accommodating the substrate W is exclusively placed. The storage unit may include a third storage unit on which the carrier C containing the processed substrate W is exclusively placed.

  The stocker unit 11 includes a carrier transport mechanism 15. The carrier transport mechanism 15 transports the carrier C between the shelf 13 and the indexer unit 21. The carrier transport mechanism 15 further transports the carrier C between different positions on the shelf 13. The carrier transport mechanism 15 is disposed between the shelf 13 and the indexer unit 21. The carrier transport mechanism 15 can access the shelf 13. The carrier transport mechanism 15 places the carrier C on the shelf 13. The carrier transport mechanism 15 takes out the carrier C from the shelf 13.

  The carrier transport mechanism 15 includes a rail 16a, a support 16b, a first elevating unit 16c, a first arm 16d, and a first holding unit 16e. The rail 16a extends in the width direction Y. The support 16b is supported by the rail 16a. The support 16b extends in the vertical direction Z. The support 16b is movable in the width direction Y with respect to the rail 16a. The first lifting unit 16c is supported by the support 16b. The first lifting unit 16c is movable in the vertical direction Z with respect to the support 16b. The first arm part 16d is supported by the first elevating part 16c. The first arm part 16d has a base end connected to the first elevating part 16c. The first arm 16d has a tip. The distal end of the first arm portion 16d is pivotable in the horizontal direction with respect to the first lifting / lowering portion 16c, and is movable in the horizontal direction with respect to the first lifting / lowering portion 16c. The first arm 16d is, for example, an articulated arm. The first holding unit 16e is supported by a tip of the first arm unit 16d. The first holding unit 16e holds one carrier C. Specifically, the first holding unit 16e grips the upper part of the carrier C.

  The carrier transport mechanism 15 further includes a second elevating unit 16f, a second arm unit 16g, and a second holding unit 16h. The second lifting unit 16f, the second arm unit 16g, and the second holding unit 16h have substantially the same structure as the first lifting unit 16c, the first arm unit 16d, and the first holding unit 16e, respectively. The second elevating unit 16f, the second arm unit 16g, and the second holding unit 16h are arranged below the first elevating unit 16c, the first arm unit 16d, and the first holding unit 16e. The second lifting / lowering portion 16f, the second arm portion 16g, and the second holding portion 16h are movable in the vertical direction Z with respect to the support 16b. The second lifting unit 16f can operate independently of the first lifting unit 16c. The second arm 16g is operable independently of the first arm 16d. The second holding unit 16h can operate independently of the first holding unit 16e.

  The carrier transport mechanism 15 is an example of the carrier transport unit in the present invention.

<Indexer unit 21>
Please refer to FIG. FIG. 5 is a front view of the indexer unit 21. The indexer unit 21 includes carrier placement units 22A1, 22A2, 22B1, and 22B2. Each of the carrier mounting portions 22A1, 22A2, 22B1, and 22B2 mounts one carrier C.

  The carrier receivers 22A1, 22A2, 22B1, and 22B2 are arranged behind the carrier transport mechanism 15. The carrier transport mechanism 15 can access the carrier placement units 22A1, 22A2, 22B1, and 22B2. The carrier transport mechanism 15 places the carrier C on the carrier placement sections 22A1, 22A2, 22B1, and 22B2. The carrier transport mechanism 15 takes out the carrier C from the carrier placement units 22A1, 22A2, 22B1, and 22B2.

  The carrier mounting portions 22A1 and 22A2 are arranged so as to be arranged in the vertical direction Z. The carrier mounting part 22A1 is disposed above the carrier mounting part 22A2. The carrier mounting portions 22B1 and 22B2 are arranged so as to be arranged in the vertical direction Z. The carrier mounting part 22B1 is disposed above the carrier mounting part 22B2. The carrier mounting portions 22A1 and 22B1 are arranged so as to be arranged in the width direction Y. The carrier mounting part 22A1 is arranged on the right side of the carrier mounting part 22B1. The carrier mounting portion 22A1 is disposed at a position substantially equal to the height of the carrier mounting portion 22B1. The carrier mounting portions 22A2 and 22B2 are arranged so as to be arranged in the width direction Y. The carrier mounting part 22A2 is arranged on the right side of the carrier mounting part 22B2. The carrier placement part 22A2 is arranged at a position substantially equal to the height of the carrier placement part 22B2.

  Hereinafter, when the carrier placement units 22A1 and 22A2 are not distinguished, they are described as “carrier placement unit 22A”. When the carrier placement sections 22B1 and 22B2 are not distinguished, they are described as “carrier placement section 22B”.

  On the shelf 13 described above, the carrier C is placed at a position retracted from the carrier placement sections 22A and 22B. The shelf 13 corresponds to a carrier retreat section in the present invention.

  Please refer to FIGS. FIG. 6 is a front view showing the internal configuration of the indexer unit 21. The indexer unit 21 includes a transport space 23. The transport space 23 is disposed behind the carrier placement units 22A and 22B.

  The transport space 23 has a substantially box shape. The transport space 23 is substantially rectangular in plan view, side view, and front view.

  The indexer unit 21 includes a frame 24. The frame 24 is provided as a framework (skeleton) of the transport space 23. The frame 24 defines the shape of the transport space 23. The frame 24 is made of, for example, metal.

  The indexer unit 21 includes a transport unit 25. The transport unit 25 is installed in the transport space 23. The transport unit 25 transports the substrate W between the carrier C and the processing block 31.

  The transport unit 25 includes a first transport mechanism 26 and a second transport mechanism 27. The first transport mechanism 26 and the second transport mechanism 27 transport the substrate W, respectively.

  The first transport mechanism 26 and the second transport mechanism 27 are arranged so as to be arranged in the width direction Y. The first transport mechanism 26 is disposed to the right of the second transport mechanism 27. The first transport mechanism 26 is disposed at substantially the same height position as the second transport mechanism 27. The first transport mechanism 26 is disposed behind the carrier mounting section 22A. The second transport mechanism 27 is disposed behind the carrier mounting section 22B.

  The carrier mounting portion 22A is arranged in an area accessible by the first transport mechanism 26. The carrier mounting section 22A is arranged outside the area accessible by the second transport mechanism 27. The carrier mounting portion 22B is arranged in an area accessible by the second transport mechanism 27. The carrier mounting portion 22B is arranged outside an area accessible by the first transport mechanism 26.

  The first transport mechanism 26 includes a column 28a, an elevating unit 28b, a rotating unit 28c, and holding units 28d and 28e. The column 28a is supported by the frame 24. The support 28a is fixed to the frame 24. The support 28 a is immovable with respect to the frame 24. The support 28a extends in the vertical direction Z. The elevating part 28b is supported by the support 28a. The elevating part 28b is movable in the vertical direction Z with respect to the support 28a. The elevating part 28b is not movable in the horizontal direction with respect to the support 28a. The rotating unit 28c is supported by the elevating unit 28b. The rotating unit 28c is rotatable about an axis parallel to the vertical direction Z with respect to the elevating unit 28b. The rotating unit 28c is not movable in the horizontal direction with respect to the elevating unit 28b. The holding units 28d and 28e are supported by the rotating unit 28c. The holding units 28d and 28e are movable in the horizontal direction with respect to the rotating unit 28c. The holding portions 28d and 28e can move forward and backward independently of each other. The holding portions 28d and 28e are in contact with the substrate W, respectively. The holding units 28d and 28e each hold one substrate W in a horizontal posture.

  The second transport mechanism 27 has substantially the same structure and shape as the first transport mechanism 26 of the indexer unit 21 except that the second transport mechanism 27 is symmetric. That is, the second transport mechanism 27 includes a column 28a, an elevating unit 28b, a rotating unit 28c, and holding units 28d and 28e.

  As described above, in the present specification, when different elements have the same structure, a detailed description thereof will be omitted by assigning a common reference numeral to the structure.

<Processing block 31>
Please refer to FIGS. FIG. 7 is a front view of the processing block 31. The processing block 31 has a substantially box shape. The processing block 31 is substantially rectangular in plan view, side view, and front view.

  The processing block 31 includes a frame 32. The frame 32 is provided as a skeleton (skeleton) of the processing block 31. Frame 32 defines the shape of processing block 31. The frame 32 is made of, for example, metal.

  Please refer to FIG. The processing block 31 includes a plurality (for example, seven) of hierarchies 33 arranged in the vertical direction Z. The plurality of layers 33 overlap with each other in a plan view. Each story 33 performs processing on the substrate W while transporting the substrate W. Each hierarchy 33 can operate in parallel. Each layer 33 can operate independently of each other.

  The processing block 31 includes a plurality of partitions 34. The partition 34 is supported by the frame 32. The partition 34 has a horizontal plate shape. The plurality of partition walls 34 are arranged so as to be arranged in the vertical direction Z. The partition 34 partitions each floor 33. The partition 34 is disposed between two levels 33 adjacent in the vertical direction Z. The partition wall 34 separates two stories 33 adjacent in the vertical direction Z. Further, the partition wall 34 is disposed below the lowest floor 33. The partition 34 functions as a bottom wall of the floor 33.

  Each of the plurality of layers 33 has substantially the same element. The structures and shapes of the elements included in the hierarchy 33 are substantially the same among the plurality of hierarchies 33. The arrangement of the elements included in the hierarchy 33 is substantially the same among the plurality of hierarchies 33. Hereinafter, the elements included in each layer 33 will be described.

  Please refer to FIGS. Each of the stories 33 has a transport space 35. The transport space 35 is arranged at the center of the story 33 in the width direction Y in plan view. The transport space 35 extends in the front-rear direction X. The transport space 35 has a front part and a rear part. The front of the transport space 35 contacts the transport space 23 of the indexer unit 21. The front part of the transport space 35 is disposed to the left and rear of the first transport mechanism 26. The front part of the transport space 35 is disposed to the left and rear of the second transport mechanism 27.

  Each of the levels 33 includes one main transport mechanism 36. The main transport mechanism 36 is installed in the transport space 35. The main transfer mechanism 36 transfers the substrate W.

  Please refer to FIGS. The main transport mechanism 36 includes columns 37a and 37b, a lifting and lowering section 37c, a forward and backward moving section 37d, a rotating section 37e, and holding sections 37f and 37g. The columns 37a and 37b are supported by the frame 32. The columns 37a and 37b are fixed to the frame 32. The columns 37a and 37b are immovable with respect to the frame 32. The columns 37a and 37b extend in the vertical direction Z. The columns 37a and 37b are arranged so as to be aligned in the front-rear direction X. The column 37a is arranged at the front of the transport space 35. The column 37b is arranged at the rear of the transport space 35. More specifically, the column 37a is disposed on the left side of the front of the transport space 35. The column 37b is arranged on the left of the rear of the transport space 35. The elevating part 37c is supported by the columns 37a and 37b. The elevating unit 37c is movable in the vertical direction Z with respect to the columns 37a and 37b. The elevating part 37c extends in the front-rear direction X. The elevating part 37c has a front end and a rear end. The front end of the elevating part 37c is connected to the column 37a. The rear end of the elevating part 37c is connected to the column 37b. The front-rear moving part 37d is supported by the elevating part 37c. The front-rear moving part 37d is movable in the front-rear direction X with respect to the elevating part 37c. The rotating part 37e is supported by the front and rear moving part 37d. The rotating part 37e is movable in the front-rear direction X integrally with the front-rear moving part 37d. The rotating portion 37e is rotatable around an axis parallel to the vertical direction Z with respect to the front-rear moving portion 37d. The holding parts 37f and 37g are supported by the rotating part 37e. The holding units 37f and 37g are movable in the horizontal direction with respect to the rotating unit 37e. The holding portions 37f and 37g can move forward and backward independently of each other. The holding portions 37f and 37g are in contact with the substrate W, respectively. Each of the holding units 37f and 37g holds one substrate W in a horizontal posture.

  Please refer to FIGS. Each of the hierarchies 33 includes a processing unit 41. The processing unit 41 processes the substrate W.

  The processing section 41 is arranged on the side of the transport space 35. The processing unit 41 contacts the transport space 35.

  The processing section 41 is arranged on the side of the main transport mechanism 36. The processing unit 41 and the main transport mechanism 36 provided on the same floor 33 are arranged at substantially the same height. The processing unit 41 is disposed at a position where the main transport mechanism 36 can access.

  The processing unit 41 includes a liquid processing unit 42 and a heat treatment unit 47. The liquid processing section 42 is disposed on the left side of the transport space 35. The heat treatment section 47 is arranged on the right side of the transport space 35. The liquid processing unit 42 performs liquid processing on the substrate W. The liquid processing is processing performed by supplying a processing liquid to the substrate W. The heat treatment unit 47 performs heat treatment on the substrate W.

  The liquid processing unit 42 includes a plurality (for example, three) of liquid processing units 43. All the liquid processing units 43 included in one liquid processing unit 42 are arranged at substantially the same height. The liquid processing units 43 are arranged in a line in the front-rear direction X. Each liquid processing unit 43 is disposed at a position in contact with the transport space 35.

  Each floor 33 has a chamber 45. The chamber 45 houses the liquid processing unit 43.

  The liquid processing unit 43 includes a rotation holding unit 44a, a nozzle 44b, and a cup 44c. The rotation holding unit 44a is arranged at a position where the main transport mechanism 36 can access. The rotation holding unit 44a holds one substrate W in a horizontal posture. The rotation holding unit 44a can rotate the held substrate W about an axis parallel to the vertical direction Z. The nozzle 44b discharges the processing liquid to the substrate W. The nozzle 44b is provided movably to a discharge position and a retreat position. The ejection position is a position above the substrate W held by the rotation holding unit 44a. When the nozzle 44b is at the discharge position, the nozzle 44b overlaps with the substrate W held by the rotation holding unit 44a in plan view. When the nozzle 44b is at the discharge position, the nozzle 44b discharges the processing liquid onto the substrate W. When the nozzle 44b is at the retracted position, the nozzle 44b does not overlap with the substrate W held by the rotation holding unit 44a in plan view. When the nozzle 44b is at the retracted position, the nozzle 44b does not discharge the processing liquid onto the substrate W. When the nozzle 44b is at the retracted position, the main transport mechanism 36 is allowed to access the rotation holding unit 44a. The cup 44c collects the processing liquid. The cup 44c has a substantially cylindrical shape centered on an axis parallel to the vertical direction Z. The cup 44c can accommodate the rotation holding unit 44a and the substrate W held by the rotation holding unit 44a. The cup 44c surrounds the side of the substrate W held by the rotation holder 44a.

  Please refer to FIG. The heat treatment unit 47 includes a plurality (for example, 12) of heat treatment units 48. The heat treatment units 48 are arranged in a matrix in a side view. For example, the heat treatment units 48 are arranged in four rows in the front-back direction X and three rows in the vertical direction Z. Each heat treatment unit 48 is disposed at a position in contact with the transport space 35.

  Please refer to FIGS. The heat treatment unit 48 includes a first plate 49a. The first plate 49a is arranged at a position where the main transport mechanism 36 can access. The first plate 49a has a substantially disk shape. The first plate 49a has a substantially horizontal upper surface. One substrate W is placed on the upper surface of the plate 49a. The heat treatment unit 48 includes a first temperature control unit (not shown). The first temperature control section is attached to the first plate 49a. The first temperature controller adjusts the first plate 49a to a first temperature. The first plate 49a adjusts the substrate W to a first temperature. The first plate 49a cools, for example, the substrate W.

  The heat treatment unit 48 may further include a second plate 49b. The second plate 49b is provided on a side of the first plate 49a. The second plate 49b is disposed at substantially the same height as the first plate 49a. The second plate 49b is arranged at a position where the main transport mechanism 36 is inaccessible. The second plate 49b is arranged at a position farther from the main transport mechanism 36 than the first plate 49a. The second plate 49b is disposed, for example, to the right of the first plate 49a. When the heat treatment unit 48 includes the second plate 49b, it includes a local transport mechanism (not shown) and a second temperature control unit. The local transport mechanism transports the substrate W between the first plate 49a and the second plate 49b. The second temperature controller is attached to the second plate 49b. The second temperature controller adjusts the second plate 49b to the second temperature. The second plate 49b adjusts the substrate W to a second temperature. The second temperature is, for example, higher than the first temperature. The second plate 49b heats the substrate W, for example.

  Please refer to FIGS. Each of the layers 33 includes a first mounting portion 51. The substrate W is mounted on the first mounting portion 51.

  The first mounting section 51 is disposed between the transport section 25 of the indexer section 21 and the main transport mechanism 36. Specifically, the first mounting portion 51 is arranged behind and to the left of the first transport mechanism 26. The first placement section 51 is disposed behind and to the right of the second transport mechanism 27. The first mounting portion 51 is arranged at a position where the first transport mechanism 26 and the second transport mechanism 27 can access each. The first mounting portion 51 is arranged in front of the main transport mechanism 36. The first mounting portion 51 and the main transport mechanism 36 provided on the same floor 33 are arranged at substantially the same height. The first placement unit 51 is arranged at a position where the main transport mechanism 36 provided on the same floor 33 as the first placement unit 51 can access.

  The first placement unit 51 is installed across the transport space 35 of the story 33 and the transport space 23 of the indexer unit 21. Specifically, a part of the first mounting portion 51 is disposed at the front of the transport space 35. The remaining part of the first placing part 51 is arranged in the transport space 23 of the indexer part 21.

  The transport unit 25 of the indexer unit 21 transports the substrate W between the carrier C placed on the carrier receivers 22A and 22B and the first receiver 51.

  The first placement section 51 includes a first feed placement section 52. The transport unit 25 of the indexer unit 21 exclusively places the substrate W on the first feed mounting unit 52. The main transport mechanism 36 does not place the substrate W on the first feed placement unit 52. The main transport mechanism 36 exclusively takes the substrate W from the first feed receiver 52. The transport unit 25 of the indexer unit 21 does not take the substrate W from the first feed mounting unit 52.

  The first placement section 51 includes a first return placement section 53. The main transport mechanism 36 exclusively places the substrate W on the first return placement section 53. The transport unit 25 of the indexer unit 21 does not place the substrate W on the first return placement unit 53. The transport unit 25 of the indexer unit 21 exclusively takes the substrate W from the first return placement unit 53. The main transport mechanism 36 does not take the substrate W from the first return placement unit 53.

  The first feed mounting section 52 and the first return mounting section 53 are arranged so as to be arranged in the up-down direction Z. The first feed receiver 52 overlaps the first return receiver 53 in a plan view.

  The first transport mounting section 52 of each story 33 is configured to be able to simultaneously load four substrates W on the first transport mounting section 52. The first return placement unit 53 of each level 33 is configured to be able to place four substrates W on the first return placement unit 53 at the same time. Hereinafter, a specific description will be given.

  FIGS. 8A and 8B are enlarged side views of the first mounting portion. The first placement unit 51 provided on one level 33 includes eight placement units 54. One substrate W is mounted on one mounting unit 54. The mounting units 54 are arranged in a line in the vertical direction Z. The mounting units 54 overlap each other in plan view. Of the eight placement units 54, four placement units 54 belong to the first feed placement unit 52. The remaining four mounting units 54 belong to the first return mounting unit 53.

  The mounting unit 54 includes one mounting plate 55a and a plurality (for example, three) of support pins 55b. The mounting plate 55a is supported by at least one of the frame 24 of the indexer unit 21 and the frame 32 of the processing block 31. The mounting plate 55a has a substantially horizontal plate shape. The support pins 55b are supported by the mounting plate 54. The support pin 55b extends in the up-down direction Z. The support pin 55b has an upper end and a lower end. The lower end of the support pin 55b is connected to the mounting plate 55a. The upper ends of the support pins 55b are arranged at the same height. The upper end of the support pin 55b contacts the back surface of the substrate W. The support pins 55b support one substrate W. Thus, one substrate W is placed on the placement unit 54 in a horizontal posture.

  Please refer to FIGS. Each of the floors 33 includes a second mounting portion 56. The substrate W is mounted on the second mounting portion 56.

The second placement unit 56 is disposed between the main transport mechanism 36 and the interface unit 71.
The second mounting section 56 is arranged behind the main transport mechanism 36. The second mounting portion 56 and the main transport mechanism 36 provided on the same floor 33 are arranged at substantially the same height. The second mounting portion 56 is arranged at a position where the main transport mechanism 36 provided on the same floor 33 as the second mounting portion 56 can access.

  The second mounting section 56 is installed over the transport space 35 of the story 33 and the interface section 71. Specifically, a part of the second mounting portion 56 is arranged at the rear of the transport space 35. The remaining part of the second placement unit 56 is arranged on the interface unit 71.

  The second placement section 56 includes a second feed placement section 57 and a second return placement section 58. The main transport mechanism 36 exclusively places the substrate W on the second feed mounting section 57. The interface unit 71 receives the substrate W from the second feed mounting unit 57. The interface unit 71 exclusively delivers the substrate W to the second return placement unit 58. The main transport mechanism 36 exclusively takes the substrate W from the second return placement unit 58.

  The second feed mounting portion 57 and the second return mounting portion 58 are arranged so as to be arranged in the vertical direction Z. The second feed receiver 57 overlaps with the second return receiver 58 in plan view.

  The second feed mounting portion 57 of each story 33 is configured to be able to simultaneously mount four substrates W on the second feed mounting portion 57. The second return placement unit 58 of each story 33 is configured to be able to place four substrates W on the second return placement unit 58 at the same time. Hereinafter, a specific description will be given.

  The second placement unit 56 provided on one level 33 includes eight placement units (not shown). One substrate W is mounted on one mounting unit. The mounting units are arranged in a line in the vertical direction Z. The mounting units overlap each other in plan view. Of the eight placement units, four placement units belong to the second feed placement unit 57. The remaining four placement units belong to the second return placement section 58. The mounting unit of the second mounting portion 56 has substantially the same structure and shape as the mounting unit 54 of the first mounting portion 51.

  The main transport mechanism 36 transports the substrate W to the processing unit 41, the first mounting unit 51, and the second mounting unit 56. More specifically, the main transport mechanism 36 transports the substrate W to the processing unit 41, the first mounting unit 51, and the second mounting unit 56 provided on the same floor 33 as the main transport mechanism 36. The main transfer mechanism 36 does not transfer the substrate W to the processing unit 41, the first mounting unit 51, and the second mounting unit 56 provided on the floor 33 different from the main transfer mechanism 36.

  Please refer to FIG. The processing block 31 includes a pump chamber 61. The pump chamber 61 is disposed at a position adjacent to the liquid processing section 42. More specifically, the pump chamber 61 is disposed behind the liquid processing unit 42. The pump chamber 61 is disposed on the right side of the transport space 35.

  The pump chamber 61 is arranged at a position that does not overlap the story 33 in plan view. For example, the pump chamber 61 is not arranged below the floor 33. For example, the pump chamber 61 is not disposed below the liquid processing unit 42.

  The area of the pump chamber 61 in a plan view is relatively small. The length of the pump chamber 61 in the front-rear direction X is smaller than the length of the pump chamber 61 in the vertical direction Z. The length of the pump chamber 61 in the width direction Y is smaller than the length of the pump chamber 61 in the vertical direction Z.

  The pump chamber 61 extends in the vertical direction Z. The pump chamber 61 has an upper end and a lower end. The upper end of the pump chamber 61 is lower than the highest floor 33. The upper end of the pump chamber 61 is arranged at substantially the same height as the second highest floor 33. The lower end of the pump chamber 61 is lower than the lowest floor 33.

  The processing block 31 includes a plurality of pumps 62. The pump 62 is installed in the pump chamber 61. The pumps 62 are arranged so as to be arranged in the vertical direction Z. The pump 62 sends the processing liquid to a liquid processing unit 43 provided in at least one of the stories 33. The pump 62 is communicatively connected to a nozzle 44b of the liquid processing unit 43 provided in at least one of the floors 33.

  Please refer to FIG. The processing performed on the substrate W by each layer 33 will be described. For convenience, the layers 33 are referred to as a first layer 33a, a second layer 33b, a third layer 33c, a fourth layer 33d, a fifth layer 33e, a sixth layer 33f, and a seventh layer 33g from bottom to top. . The first hierarchy 33a is the lowest in the hierarchy 33. The seventh hierarchy 33g is the highest in the hierarchy 33.

  The processing units 41 in the sixth to seventh layers 33f to 33g perform the same processing on the substrate W. The processing performed on the substrate W by the processing units 41 on the sixth to seventh layers 33f to 33g includes an anti-reflection film forming process of forming an anti-reflection film on the substrate W.

  The processing units 41 of the fourth to fifth layers 33d to 33e perform the same processing on the substrate W. The processing performed on the substrate W by the processing units 41 of the fourth to fifth layers 33d to 33e includes a resist film forming processing of forming a resist film on the substrate W.

  The processing units 41 in the first to third layers 33a to 33c perform the same processing on the substrate W. The processing performed on the substrate W by the processing units 41 in the first to third layers 33a to 33c includes a development processing for developing the substrate W.

  The processing performed on the substrate W by the processing units 41 on the sixth to seventh layers 33f to 33g does not include the resist film forming processing and the developing processing. The processing performed on the substrate W by the processing units 41 of the fourth to fifth layers 33d to 33e does not include the antireflection film forming processing and the developing processing. The processing performed on the substrate W by the processing units 41 in the first to third layers 33a to 33c does not include the anti-reflection film forming processing and the resist film forming processing.

  The anti-reflection film forming process, the resist film forming process, and the developing process all belong to a liquid process. The anti-reflection film forming process and the resist film forming process belong to a pre-exposure process performed before the exposure process. The development process belongs to a post-exposure process performed after the exposure process.

  The anti-reflection film forming process and the resist film forming process are examples of the first pre-exposure process and the second pre-exposure process in the present invention.

  The details of the configuration of the processing unit 41 described above differ between the hierarchies 33 according to the difference in the processing between the hierarchies 33. Hereinafter, a specific description will be given.

  The liquid processing units 42 of the sixth to seventh layers 33f to 33g use an antireflection film material as a processing liquid. The liquid processing units 43 in the sixth to seventh layers 33f to 33g correspond to the antireflection film coating unit BARC.

  The liquid processing units 42 of the fourth to fifth layers 33d to 33e use a resist film material as a processing liquid. The liquid processing units 43 in the fourth to fifth layers 33d to 33e correspond to the resist film coating units RESIST.

  The liquid processing units 42 of the first to third layers 33a to 33c use a developing solution as a processing solution. The liquid processing units 43 in the first to third layers 33a to 33c correspond to the developing units SD.

  The shape of the nozzle 44b may be different between the sixth to seventh layers 33f to 33g and the fourth to fifth layers 33d to 33e. The shape of the nozzle 44b may be different between the sixth to seventh layers 33f to 33g and the first to third layers 33a to 33c. The shape of the nozzle 44b may be different between the fourth to fifth layers 33d to 33e and the first to third layers 33a to 33c.

  Incidentally, the pump 62 sends the processing liquid to the liquid processing units 43 provided in the fourth to seventh levels 33d to 33g. The pump 62 does not send the processing liquid to the liquid processing units 43 provided in the first to third stories 33a to 33c.

  Please refer to FIG. The processing performed on the substrate W by the processing units 41 of the sixth to seventh layers 33f to 33g further includes a hydrophobic processing, a heating processing, and a cooling processing. The hydrophobizing treatment, the heating treatment, and the cooling treatment all belong to the heat treatment. The hydrophobization process is a process of adjusting the substrate W to a predetermined temperature while supplying a processing gas containing hexamethyldisilazane (HMDS: Hexamethyldisilazane) to the substrate W. The hydrophobization treatment is performed to increase the adhesion between the substrate W and the coating film. The heat treatment heats the substrate W. The cooling process cools the substrate W.

  Therefore, a part of the heat treatment unit 48 on the sixth to seventh layers 33f to 33g corresponds to the hydrophobic treatment unit AHP. Another part of the heat treatment unit 48 on the sixth to seventh layers 33f to 33g corresponds to the heating unit HP. The rest of the heat treatment units 48 on the sixth to seventh layers 33f to 33g correspond to the cooling units CP.

  The processing performed on the substrate W by the processing units 41 of the fourth to fifth layers 33d to 33e further includes a heating process and a cooling process.

  Therefore, a part of the heat treatment unit 48 in the fourth to fifth layers 33d to 33e corresponds to the heating unit HP. The rest of the heat treatment units 48 in the fourth to fifth layers 33d to 33e correspond to the cooling units CP.

  The processing performed on the substrate W by the processing units 41 of the first to third layers 33a to 33c further includes a heating process and a cooling process.

  Therefore, a part of the heat treatment unit 48 in the first to third layers 33a to 33c corresponds to the heating unit HP. The rest of the heat treatment units 48 in the first to third layers 33a to 33c correspond to the cooling units CP.

  The structure of the heat treatment unit 48 may be different between the hydrophobization unit AHP, the heating unit HP, and the cooling unit CP. For example, the hydrophobic processing unit AHP and the heating unit HP may include the second plate 49b. The cooling unit CP does not need to include the second plate 49b. The hydrophobization processing unit AHP may further include a gas supply unit that supplies a processing gas to the substrate W.

  The processing performed on the substrate W by the processing units 41 in the sixth to seventh layers 33f to 33g is an example of the first processing in the present invention. The sixth to seventh layers 33f to 33g are examples of layers in which the first processing in the present invention is performed. The processing performed on the substrate W by the processing units 41 of the fourth to fifth layers 33d to 33e is an example of the second processing in the present invention. The fourth to fifth layers 33d to 33e are examples of layers in which the second processing in the present invention is performed. The processing performed on the substrate W by the processing units 41 of the first to third layers 33a to 33c is an example of the third processing in the present invention. First to third hierarchies 33a to 33c are examples of hierarchies in which the third processing in the present invention is performed.

<Interface unit 71>
Please refer to FIGS. FIG. 9 is a rear view of the front part of the interface unit 71. FIG. 10 is a rear view of the rear part of the interface unit 71. The interface unit 71 has a substantially box shape. The interface unit 71 is substantially rectangular in plan view, side view, and front view.

  The interface unit 71 includes a frame 72. The frame 72 is provided as a framework (skeleton) of the interface unit 71. The frame 72 defines the shape of the interface unit 71. The frame 72 is made of, for example, metal.

  The interface unit 71 includes a transport unit 73. The transport unit 73 transports the substrate W between the second placement unit 56 and the exposure machine EXP.

  The transport unit 73 includes a first transport mechanism 74 and a second transport mechanism 75. The first transport mechanism 74 and the second transport mechanism 75 transport the substrate W, respectively. The first transport mechanism 74 and the second transport mechanism 75 are arranged so as to be arranged in the width direction Y. The first transport mechanism 74 is disposed to the right of the second transport mechanism 75. The first transport mechanism 74 is disposed at substantially the same height position as the second transport mechanism 75.

  The first transport mechanism 74 is disposed behind and to the right of the second placement unit 56. The second transport mechanism 75 is disposed behind and to the left of the second placement unit 56. The first transport mechanism 74 and the second transport mechanism 75 are each capable of accessing the second receiver 56.

  The first transport mechanism 74 has substantially the same structure and shape as the first transport mechanism 26 of the indexer unit 21. The second transport mechanism 75 has substantially the same structure and shape as the first transport mechanism 26 of the indexer unit 21 except that the second transport mechanism 75 is symmetric.

  The transport unit 73 includes a third transport mechanism 76. The third transport mechanism 76 transports the substrate W. The third transport mechanism 76 is disposed behind the first transport mechanism 74 and the second transport mechanism 75. More specifically, the third transport mechanism 76 is disposed behind and to the left of the first transport mechanism 74. The third transport mechanism 76 is disposed behind and to the right of the second transport mechanism 75. The third transport mechanism 76 is disposed at substantially the same height position as the first transport mechanism 74 and the second transport mechanism 75. More specifically, the third transport mechanism 76 is disposed at substantially the same height as the lower portion of the first transport mechanism 74 and the lower portion of the second transport mechanism 75. The third transport mechanism 76 can access the exposure machine EXP. The third transport mechanism 76 transfers the substrate W to the exposure machine EXP, and receives the substrate W from the exposure machine EXP.

  The third transport mechanism 76 includes a driving unit 77a and two holding units 77b and 77c. The driving section 77a is supported by the frame 72. The holding units 77b and 77c are supported by the driving unit 77a. The driving unit 77a moves the holding units 77b and 77c. The driving unit 77a moves the holding units 77b and 77c in the front-back direction X, the width direction Y, and the up-down direction Z, for example. The driving unit 77a rotates the holding units 77b and 77c about an axis parallel to the vertical direction Z, for example. Each of the holding portions 77b and 77c contacts the substrate W. Each of the holding units 77b and 77c holds one substrate W in a horizontal posture.

  The interface unit 71 includes an intermediate mounting unit 81. The substrate W is mounted on the intermediate mounting portion 81.

  The intermediate mounting section 81 is disposed between the first transport mechanism 74, the second transport mechanism 75, and the third transport mechanism 76. The intermediate mounting section 81 is disposed behind the first transport mechanism 74 and the second transport mechanism 75. The intermediate mounting section 81 is arranged behind and to the left of the first transport mechanism 74. The intermediate mounting section 81 is disposed behind and to the right of the second transport mechanism 75. The intermediate mounting section 81 is disposed in front of the third transport mechanism 76. The intermediate mounting section 81 is disposed at a position substantially at the same height as the first transport mechanism 74, the second transport mechanism 75, and the third transport mechanism 76. The intermediate mounting portion 81 is disposed at a position substantially below the lower portion of the first transport mechanism 74 and the lower portion of the second transport mechanism 75. The intermediate mounting section 81 is arranged at a position where the first transport mechanism 74, the second transport mechanism 75, and the third transport mechanism 76 can access.

  Please refer to FIG. The intermediate mounting section 81 includes a feed mounting section 82 and a return mounting section 83. The first transport mechanism 74 and the second transport mechanism 75 place the substrate W on the feed mounting section 82. The third transfer mechanism 76 exclusively takes out the substrate W from the feed receiver 82. The third transport mechanism 76 places the substrate W on the return placement section 83. The first transport mechanism 74 and the second transport mechanism 75 take the substrate W from the return placement unit 83.

  The feed mounting portion 82 and the return mounting portion 83 are arranged so as to be arranged in the vertical direction Z. The feed mounting portion 82 overlaps with the return mounting portion 83 in a plan view.

  The feed mounting unit 82 includes a plurality of cooling mounting units 84. One substrate W is mounted on one cooling mounting unit 84. The cooling mounting unit 84 cools the substrate W mounted on the cooling mounting unit 84. The cooling mounting unit 84 adjusts, for example, the temperature of the substrate W to a temperature suitable for the exposure processing.

  The cooling mounting units 84 are arranged in a line in the vertical direction Z. The cooling mounting units 84 overlap with each other in plan view.

  Although not shown, the cooling mounting unit 84 has a structure in which a temperature control unit is added to the mounting unit 54. The temperature controller is attached to the mounting plate 55a of the mounting unit 54, and adjusts the temperature of the mounting plate 55a.

  The return placement unit 83 includes a plurality of placement units 85. One substrate W is mounted on one mounting unit 85.

  The mounting units 85 are arranged in a line in the vertical direction Z. The mounting units 85 overlap each other in plan view. The mounting unit 85 overlaps the cooling mounting unit 84 in a plan view.

  The mounting unit 85 has substantially the same structure and shape as the mounting unit 54.

  Please refer to FIGS. The interface unit 71 includes a cleaning unit 91. The cleaning unit 91 performs a cleaning process for cleaning the substrate W. The cleaning unit 91 further performs a drying process for drying the substrate W. The transport unit 73 of the interface unit 71 transports the substrate W to the cleaning unit 91.

  The cleaning unit 91 includes a first cleaning unit 92. The first cleaning unit 92 is arranged at a position where the first transport mechanism 74 can access. The first cleaning unit 92 is disposed at a position adjacent to the first transport mechanism 74. The first cleaning section 92 is arranged on the side of the first transport mechanism 74. The first cleaning unit 92 is disposed on the right side of the first transport mechanism 74. The first cleaning unit 92 is disposed at a position substantially at the same height as the first transport mechanism 74.

  The first cleaning unit 92 includes a plurality (for example, three) of pre-exposure cleaning units 93. The pre-exposure cleaning units 93 are arranged in a line in the vertical direction Z. The pre-exposure cleaning units 93 overlap each other in a plan view. The pre-exposure cleaning unit 93 is arranged at a position where the first transport mechanism 74 can access.

  The pre-exposure cleaning unit 93 performs a cleaning process on the substrate W before the exposure process. Specifically, the pre-exposure cleaning unit 93 cleans the substrate W by supplying a cleaning liquid to the substrate W. For example, the pre-exposure cleaning unit 93 may supply a cleaning liquid to the back surface of the substrate W to clean the back surface and the peripheral portion of the substrate W. The pre-exposure cleaning unit 93 may clean the substrate W while rotating the substrate W, for example. The pre-exposure cleaning unit 93 may clean the substrate W, for example, while making the brush contact the substrate W. The pre-exposure cleaning unit 93 further performs a drying process on the substrate W before the exposure process.

  The first cleaning unit 92 includes a plurality (for example, three) of post-exposure cleaning units 94. The post-exposure cleaning units 94 are arranged in a line in the vertical direction Z. The post-exposure cleaning units 94 overlap each other in plan view. The post-exposure cleaning unit 94 is disposed below the pre-exposure cleaning unit 93. The post-exposure cleaning unit 94 overlaps the pre-exposure cleaning unit 93 in a plan view. The post-exposure cleaning unit 94 is arranged at a position where the first transport mechanism 74 can access.

  The post-exposure cleaning unit 94 performs a cleaning process on the substrate W after the exposure process. Specifically, the post-exposure cleaning unit 94 cleans the substrate W by supplying a cleaning liquid to the substrate W. The post-exposure cleaning unit 94 further performs a drying process on the substrate W.

  The cleaning unit 91 includes a second cleaning unit 95. The second cleaning unit 95 is disposed at a position where the second transport mechanism 75 can access. The second cleaning unit 95 is disposed at a position adjacent to the second transport mechanism 75. The second cleaning unit 95 is disposed on a side of the second transport mechanism 75. The second cleaning unit 95 is disposed to the left of the second transport mechanism 75. The second cleaning unit 95 is disposed at a position substantially at the same height as the second transport mechanism 75.

  The second cleaning unit 95 includes a plurality (for example, three) of pre-exposure cleaning units 96. The second cleaning unit 95 includes a plurality (for example, three) of post-exposure cleaning units 97. The pre-exposure cleaning unit 96 and the post-exposure cleaning unit 97 are arranged similarly to the pre-exposure cleaning unit 93 and the post-exposure cleaning unit 94, except that they are symmetric. The pre-exposure cleaning unit 96 and the post-exposure cleaning unit 97 have the same structure and shape as the pre-exposure cleaning unit 93 and the post-exposure cleaning unit 94 except that they are symmetrical.

  The above-described cleaning processing (for example, processing performed by the cleaning unit 91 on the substrate W) belongs to liquid processing. The cleaning process performed on the substrate W before the exposure process (for example, the process performed on the substrate W by the pre-exposure cleaning unit 93 and the pre-exposure cleaning unit 96) belongs to the pre-exposure process. The cleaning process performed on the substrate W after the exposure process (for example, the process performed by the post-exposure cleaning unit 94 and the post-exposure cleaning unit 97 on the substrate W) belongs to the post-exposure process.

  Please refer to FIGS. The interface unit 71 includes a heat treatment unit 101. The heat treatment unit 101 performs heat treatment on the substrate W. The transfer unit 73 of the interface unit 71 transfers the substrate W to the heat treatment unit 101.

  The heat treatment unit 101 includes a first heat treatment unit 102. The first heat treatment unit 102 is arranged at a position where the first transport mechanism 74 can access. The first heat treatment unit 102 is disposed at a position adjacent to the first transport mechanism 74. The first heat treatment unit 102 is disposed behind the first transport mechanism 74. The first heat treatment unit 102 is disposed behind the first cleaning unit 92. The first heat treatment unit 102 is arranged at a position higher than the third transfer mechanism 76. The first heat treatment unit 102 is disposed on the right side of the intermediate mounting unit 81 in a plan view. The first heat treatment unit 102 is disposed at a position substantially at the same height as the first transfer mechanism 74. More specifically, the first heat treatment unit 102 is disposed at a position substantially at the same height as the upper part of the first transport mechanism 74.

  The first heat treatment unit 102 includes a plurality of post-exposure heating units 103. The post-exposure heating units 103 are arranged in a line in the vertical direction Z. The post-exposure heating units 103 overlap each other in plan view. The post-exposure heating unit 103 is arranged at a position accessible by the first transport mechanism 74.

  The post-exposure heating unit 103 performs a heat process (ie, a post-exposure bake) on the substrate W after the exposure process. The post-exposure heating unit 103 has substantially the same structure and shape as the heat treatment unit 48. More specifically, the post-exposure heating unit 103 has substantially the same structure and shape as the heat treatment unit 48 corresponding to the heating unit HP.

  The heat treatment unit 101 includes a second heat treatment unit 104. The second heat treatment unit 104 is arranged at a position where the second transport mechanism 75 can access. The second heat treatment unit 104 is disposed at a position adjacent to the second transport mechanism 75. The second heat treatment unit 104 is disposed behind the second transport mechanism 75. The second heat treatment unit 104 is disposed behind the second cleaning unit 95. The second heat treatment section 104 is arranged at a position higher than the third transfer mechanism 76. The second heat treatment unit 104 is disposed to the left of the intermediate placement unit 81 in a plan view. The second heat treatment section 104 is arranged at a position substantially equal to the height of the second transfer mechanism 75. More specifically, the second heat treatment unit 104 is disposed at a position substantially at the same height as the upper part of the second transfer mechanism 75.

  The second heat treatment unit 104 includes a plurality of post-exposure heating units 105. The post-exposure heating unit 105 is arranged similarly to the post-exposure heating unit 103 except that the post-exposure heating unit 105 is symmetric. The post-exposure heating unit 105 has the same structure and shape as the post-exposure heating unit 103 except that it is symmetrical.

  The post-exposure baking process described above (for example, a process performed by the heat treatment unit 101 on the substrate W) belongs to a heat treatment. Post-exposure heat treatment belongs to post-exposure processing.

<Control unit 107>
Please refer to FIG. The substrate processing apparatus 1 includes a control unit 107. The control unit 107 is installed in, for example, the indexer unit 21. The control unit 107 controls the stocker unit 11, the indexer unit 21, the processing block 31, and the interface unit 71. More specifically, the control unit 107 controls the carrier transport mechanism 15, the transport unit 25, the main transport mechanism 36, and the transport unit 73. The control unit 107 further controls the processing unit 41, the cleaning unit 91, and the heat treatment unit 101.

  The control unit 107 is realized by a central processing unit (CPU) that executes various processes, a RAM (Random-Access Memory) serving as a work area for the arithmetic processing, and a storage medium such as a fixed disk. Various information such as a processing recipe (processing program) for processing the substrate W and information for identifying each substrate W is stored in the storage medium.

<Operation of the transport unit 25 of the indexer unit 21>
FIG. 11 is a diagram schematically illustrating the cycle operation of the first transport mechanism 26 of the indexer unit 21. FIG. 12 is a diagram schematically showing the cycle operation of the second transport mechanism 27 of the indexer unit 21.

  The first transport mechanism 26 and the second transport mechanism 27 of the indexer unit 21 repeat the cycle operation shown in FIGS. 11 and 12 under the control of the control unit 107. The cycle operation of the first transport mechanism 26 includes a supply operation and an interlayer transport operation. That is, the first transport mechanism 26 performs the supply operation and the interlayer transport operation. The supply operation is an operation of transporting the substrate W from the carrier C to the first placement unit 51. The interlayer transport operation is an operation of transporting the substrate W between two first placement units 51 provided on different levels 33.

  The cycle operation of the second transport mechanism 27 includes a collection operation. That is, the second transport mechanism 27 performs a collecting operation. The collecting operation is an operation of transporting the substrate W from the first mounting portion 51 to the carrier C.

  Note that the first transport mechanism 26 does not perform the collection operation. The second transport mechanism 27 does not perform the supply operation and the interlayer transport operation.

<Operation of substrate processing equipment>
FIG. 13 is a diagram schematically illustrating an outline of a transport path of the substrate W. FIG. 13 shows the transfer route of the substrate W by a chain line. 13 and 14, “a” is added to the reference numerals of the elements of the first hierarchy 33a for convenience. For example, “52a” indicates the first feed placement unit 52 on the first level 33a. Similarly, “bg” is added to the reference numerals of the elements of the second to seventh layers 33b to 33g.

  The substrate processing apparatus 1 performs processing on each substrate W in at least two or more layers 33. Therefore, the substrate processing apparatus 1 transports each substrate W to a plurality of stories 33.

  Specifically, each substrate W includes one of the sixth to seventh layers 33f to 33g, one of the fourth to fifth layers 33d to 33e, and one of the first to third layers 33a to 33c. It is conveyed to any one. Each substrate W is provided on one of the sixth to seventh layers 33f to 33g, one of the fourth to fifth layers 33d to 33e, and one of the first to third layers 33a to 33c. ,It is processed.

  FIG. 14 is a diagram schematically illustrating elements (for example, processing units) of the substrate processing apparatus 1 through which the substrate W passes. In FIG. 14, “ag” is added to the reference numerals of the elements of the first to seventh layers 33 a to 33 g for convenience. An operation example of the substrate processing apparatus 1 includes a supply step, a processing step, an interlayer transport step, and a collection step.

  The supply step, the processing step, the interlayer transport step, and the recovery step will be described with reference to FIGS.

<< Supply process >>
The first transport mechanism 26 performs a supply operation, and transports the substrate W from the carrier C to the sixth to seventh stories 33f to 33g.

  Specifically, the first transport mechanism 26 unloads the substrate W from the carrier C mounted on the carrier mounting portion 22A, and mounts the substrate W on the first feed mounting portion 52f of the sixth floor 33f. . The first transport mechanism 26 unloads the substrate W from the carrier C mounted on the carrier mounting portion 22A, and mounts the substrate W on the first feed mounting portion 52g of the seventh level 33g.

<< processing step >>
At the sixth level 33f, a process including an anti-reflection film forming process is performed on the substrate W.

  Specifically, the main transport mechanism 36f of the sixth floor 33f takes the substrate W from the first feed mounting unit 52f of the sixth floor 33f, and transports the substrate W to the processing unit 41 of the sixth floor 33f. The main transport mechanism 36f of the sixth floor 33f transports the substrate W to the hydrophobic processing unit AHPf, the antireflection film coating unit BARCf, the heating unit HPf, and the cooling unit CPf in this order, for example. The processing unit 41 of the sixth hierarchy 33f performs processing on the substrate W. The processing unit 41 of the sixth level 33f performs, for example, a hydrophobic process, an antireflection film forming process, a heating process, and a cooling process on the substrate W in this order. The main transport mechanism 36f on the sixth floor 33f places the substrate W on which the processing on the sixth floor 33f has been performed on the first return placement unit 53f.

  When the main transport mechanism 36f of the sixth level 33f transports the substrate W to the hydrophobic processing unit AHPf, the main transport mechanism 36f of the sixth level 33f removes the processed substrate W in the hydrophobic processing unit AHPf from the unprocessed state. May be replaced by the substrate W. For example, in a state where the main transfer mechanism 36f of the sixth floor 33f holds the unprocessed substrate W in the holding part 37f, the main transfer mechanism 36f of the sixth floor 33f uses the holding part 37g to perform the hydrophobic processing unit AHPf. The unprocessed substrate W is carried out from the hydrophobizing unit AHPf, and the main transport mechanism 36f of the sixth level 33f transfers the unprocessed substrate W to the hydrophobizing unit AHPf using the holding unit 37f. You may carry in. Even when the main transport mechanism 36f of the sixth level 33f transports the substrate W to the other units BARCf, HPf, CPf, the main transport mechanism 36f of the sixth level 33f transfers the processed substrate W to the unprocessed substrate W. It may be replaced.

  Similarly to the sixth layer 33f, the processing including the anti-reflection film formation processing is performed on the substrate W in the seventh layer 33g. The substrate W on which the processing in the seventh hierarchy 33g has been performed is placed on the first return placement unit 53g.

<< Interlayer transport process >>
The first transfer mechanism 26 performs an interlayer transfer operation, and transfers the substrate W from the sixth to seventh stories 33f to 33g to the fourth to fifth stories 33d to 33e.

  Specifically, the first transport mechanism 26 takes the substrate W on the first return placement unit 53f on the sixth story 33f, and places the substrate W on the first feed placement unit 52d on the fourth story 33d. . The first transport mechanism 26 takes the substrate W on the first return placement unit 53g on the seventh story 33g, and places the substrate W on the first feed placement unit 52e on the fourth story 33e.

<< processing step >>
At the fourth level 33d, a process including a resist film forming process is performed on the substrate W.

  Specifically, the main transport mechanism 36d of the fourth floor 33d takes the substrate W from the first feed mounting unit 52d of the fourth floor 33d, and transports the substrate W to the processing unit 41 of the fourth floor 33d. The main transport mechanism 36d of the fourth floor 33d transports the substrate W to, for example, the resist film coating unit RESISTd, the heating unit HPd, and the cooling unit CPd in this order. The processing unit 41 of the fourth hierarchy 33d performs processing on the substrate W. The processing unit 41 of the fourth hierarchy 33d performs, for example, a resist film forming process, a heating process, and a cooling process on the substrate W in this order. The main transport mechanism 36d in the fourth story 33d places the substrate W on which the processing in the fourth story 33d has been performed on the second feed placement part 57d.

  Similarly to the fourth layer 33d, a process including a resist film forming process is performed on the substrate W in the fifth layer 33e. The substrate W on which the processing in the fifth hierarchy 33e has been performed is placed on the second feed placement unit 57e.

  The transport unit 73 of the interface unit 71 transports the substrate W from the second feed mounting units 57d and 57e to the exposure machine EXP via the pre-exposure cleaning units 93 and 96.

  Specifically, the first transport mechanism 74 transports the pre-exposure cleaning unit 93 from the second feed mounting unit 57d. The pre-exposure cleaning unit 93 performs a cleaning process on the substrate W. The first transport mechanism 74 transports the substrate W from the pre-exposure cleaning unit 93 to the feed mounting unit 82 (that is, the cooling mounting unit 84). The second transport mechanism 75 transports the substrate W from the second feed receiver 57e to the pre-exposure cleaning unit 96. The pre-exposure cleaning unit 96 performs a cleaning process on the substrate W. The second transport mechanism 75 transports the substrate W from the pre-exposure cleaning unit 96 to the feed receiver 82. The third transport mechanism 76 transports the substrate W from the feeding unit 82 to the exposure machine EXP. The exposure machine EXP performs exposure processing on the substrate W.

  The transport unit 73 of the interface unit 71 transports the substrate W from the exposure machine EXP to the second return placement units 58a to 58c via the post-exposure cleaning units 94 and 97 and the post-exposure heating units 103 and 105.

  Specifically, the third transport mechanism 76 transports from the exposure machine EXP to the return placement unit 83 (that is, the placement unit 85). The first transport mechanism 74 transports the substrate W from the return placement unit 83 to the post-exposure cleaning unit 94. The post-exposure cleaning unit 94 performs a cleaning process on the substrate W. The first transport mechanism 74 transports the substrate W from the post-exposure cleaning unit 94 to the post-exposure heating unit 103. The post-exposure heating unit 103 performs a post-exposure bake on the substrate W. The first transport mechanism 74 transports the substrate W from the post-exposure heating unit 103 to the second return placement units 58a to 58c of the first to third stories 33a to 33c. Similarly, the second transport mechanism 75 transports the substrate W from the return placement unit 83 to the post-exposure cleaning unit 97. The post-exposure cleaning unit 97 performs a cleaning process on the substrate W. The second transport mechanism 75 transports the substrate W from the post-exposure cleaning unit 97 to the post-exposure heating unit 105. The post-exposure heating unit 105 performs a post-exposure bake on the substrate W. The second transport mechanism 75 transports the substrate W from the post-exposure heating unit 105 to the second return placement units 58a to 58c of the first to third stories 33a to 33c.

  The transport section 73 of the interface section 71 does not perform the interlayer transport operation.

  In the first level 33a, processing including development processing is performed on the substrate W.

  Specifically, the main transport mechanism 36a of the first story 33a takes the substrate W from the second return placement part 58a of the first story 33a and transports the substrate W to the processing unit 41 of the first story 33a. The main transport mechanism 36a of the first level 33a transports the substrate W to the developing unit SDa, the heating unit HPa, and the cooling unit CPa in this order, for example. The processing unit 41 of the first hierarchy 33a performs processing on the substrate W. The processing unit 41 of the first hierarchy 33a performs, for example, a development process, a heating process, and a cooling process on the substrate W in this order. The main transport mechanism 36a of the first story 33a places the substrate W on which the processing in the first story 33a has been performed on the first return placement part 53a.

  In the second to third layers 33b to 33c, processing including development processing is performed on the substrate W in the same manner as in the first layer 33a. The substrate W on which the processing in the second to third layers 33b to 33c has been performed is placed on the second feed placement units 57b to 57c.

<< Recovery process >>
The second transport mechanism 27 performs a recovery operation and transports the substrate W from the first to third stories 33a to 33c to the carrier C.

  Specifically, the second transport mechanism 27 takes the substrate W from the first return placement unit 53a of the first story 33a, and carries the substrate W into the carrier C placed on the carrier placement unit 22B. Similarly, the second transport mechanism 27 transports the substrate W from the first return placement unit 53b of the second story 33b to the carrier C placed on the carrier placement unit 22B. The second transport mechanism 27 transports the substrate W from the first return placement unit 53c on the third story 33c to the carrier C placed on the carrier placement unit 22B.

<Operation of the transport unit 25 of the indexer unit 21 with respect to the first mounting unit 51>
With reference to FIGS. 8A and 8B, a detailed operation example of the transport unit 25 of the indexer unit 21 with respect to the first placement unit 51 will be described.

  As described above, the first placement unit 51 provided on one level 33 includes eight placement units 54. For convenience, the eight mounting units 54 provided in one layer 33 are referred to as mounting units 54a, 54b, ..., 54h. The placement units 54a to 54d belong to the first return placement unit 53. The placement units 54e to 54h belong to the first feed placement unit 52.

  Referring to FIG. The first transport mechanism 26 places two substrates W on the first placement unit 51 at the same time. Specifically, the first transport mechanism 26 accesses the first placement unit 51 in a state where the two substrates W are held by the holding units 28d and 28e. The first transport mechanism 26 simultaneously places the two substrates W on the first feed mounting unit 52. For example, the first transport mechanism 26 places the first and second substrates W on the placement units 54e and 54f at the same time.

  As described above, the first feed mounting unit 52 is configured so that the four substrates W can be simultaneously mounted on the first feed mounting unit 52. For this reason, the first transport mechanism 26 can place two more substrates W on the first feed mounting unit 52 at the same time. For example, the first transport mechanism 26 can simultaneously place the third and fourth substrates W on the placement units 54g and 54h.

  While the first transport mechanism 26 places the third and fourth substrates W on the placement units 54g and 54h, the main transport mechanism 36 can take the substrates W from the placement units 54e and 54f. More specifically, after the first transport mechanism 26 places the first and second substrates W on the placement units 54e and 54f, the first transport mechanism 26 places the fifth and sixth substrates W again. The main transport mechanism 36 can remove the first and second substrates W from the mounting units 54e and 54f until they are mounted on the units 54e and 54f.

  Here, the first transport mechanism 26 and the main transport mechanism 36 may simultaneously access the first feed receiver 52. For example, when the first transport mechanism 26 accesses the placement units 54g and 54h, the main transport mechanism 36 may access the placement units 54e to 54f. The positions of the placement units 54g and 54h are different from the positions of the placement units 54e to 54f. The mounting units 54g and 54h are arranged above the mounting units 54e to 54f. Therefore, there is no possibility that the first transport mechanism 26 and the main transport mechanism 36 interfere with each other. Therefore, it is allowed that the first transport mechanism 26 and the main transport mechanism 36 simultaneously access the first feed mounting unit 52. Therefore, when one of the first transport mechanism 26 and the main transport mechanism 36 accesses the first feed receiver 52, the other of the first transport mechanism 26 and the main transport mechanism 36 does not need to wait. Therefore, the efficiency with which the first transfer mechanism 26 transfers the substrate W can be further increased. Similarly, the efficiency with which the main transport mechanism 36 transports the substrate W can be further increased.

  Therefore, even in the case where the first transport mechanism 26 simultaneously places two substrates W on the first feed mounting portion 52 in one operation, the first transport mechanism 26 performs the first feed mounting portion. The operation of placing the substrate W on the 52 can be repeated without delay.

  The operation of mounting the substrate W on the first feed mounting unit 52 is included in the above-described supply operation. The operation of mounting the substrate W on the first feed mounting unit 52 is also included in the above-described interlayer transfer operation.

  Referring to FIG. The first transport mechanism 26 simultaneously takes two substrates W from the first mounting portion 51. Specifically, the first transport mechanism 26 simultaneously takes out two substrates W from the first return placement unit 53 using the holding units 28d and 28e. For example, the first transport mechanism 26 simultaneously takes the first and second substrates W on the mounting units 54a and 54b.

  As described above, the first return placement unit 53 is configured so that the four substrates W can be placed on the first return placement unit 53 at the same time. Therefore, the first transport mechanism 26 can simultaneously take two more substrates W from the first return placement unit 53. For example, the first transport mechanism 26 can simultaneously take the third and fourth substrates W on the mounting units 54c and 54d.

  While the first transport mechanism 26 is taking the third and fourth substrates W on the mounting units 54c and 54d, the main transport mechanism 36 transfers the fifth and sixth substrates W to the mounting units 54a and 54b. Can be placed. More specifically, after the first transport mechanism 26 has taken the first and second substrates W on the mounting units 54a and 54b, the first transport mechanism 26 accesses the mounting units 54a and 54b again. In the meantime, the main transport mechanism 36 can place the substrate W on the placement units 54a and 54b.

  Here, the first transport mechanism 26 and the main transport mechanism 36 may access the first return placement unit 53 at the same time. For example, when the first transport mechanism 26 accesses the placement units 54c and 54d, the main transport mechanism 36 may access the placement units 54a and 54b. The positions of the mounting units 54c and 54d are different from the positions of the mounting units 54a and 54b. Therefore, there is no possibility that the first transport mechanism 26 and the main transport mechanism 36 interfere with each other. Therefore, it is permitted that the first transport mechanism 26 and the main transport mechanism 36 simultaneously access the first return placement unit 53. Therefore, when one of the first transport mechanism 26 and the main transport mechanism 36 accesses the first return placement unit 53, the other of the first transport mechanism 26 and the main transport mechanism 36 does not need to wait. Therefore, the efficiency with which the first transfer mechanism 26 transfers the substrate W can be further increased. Similarly, the efficiency with which the main transport mechanism 36 transports the substrate W can be further increased.

  Therefore, even when the first transport mechanism 26 simultaneously takes two substrates W from the first return placement unit 53 in one operation, the first transport mechanism 26 does not The operation of removing the substrate W can be repeated without delay.

  The operation of removing the substrate W from the first return placement unit 53 is included in the above-described interlayer transfer operation.

  Although not shown, the second transport mechanism 27 takes two substrates W from the first return placement unit 53 at the same time. Since four substrates W can be placed on the first return placement unit 53, the second transport mechanism 27 can repeat the operation of removing the substrates W from the first return placement unit 53 without delay.

  As described above, in the supply operation, the transport unit 25 of the indexer unit 21 accesses the first feed mounting unit 52 and does not access the first return mounting unit 53. In the collection operation, the transport unit 25 of the indexer unit 21 accesses the first return placement unit 53 and does not access the first feed placement unit 52. The position of the first feed receiver 52 is different from the position of the first return receiver 53. Therefore, the operation of the transport unit 25 accessing the first feed mounting unit 52 in the supply operation does not interfere with the operation of the transport unit 25 accessing the first return mounting unit 53 in the collection operation.

  In the interlayer transport operation, the transport unit 25 of the indexer unit 21 accesses the first feed mounting unit 52. Here, the floor 33 provided with the first feed receiver 52 accessed by the transfer unit 25 in the interlayer transfer operation is different from the floor 33 provided with the first feed receiver 52 accessed by the transfer unit 25 in the supply operation. . Therefore, the operation of the transport unit 25 accessing the first feed mounting unit 52 in the interlayer transport operation does not interfere with the operation of the transport unit 25 accessing the first feed mounting unit 52 in the supply operation.

  In the interlayer transport operation, the transport unit 25 of the indexer unit 21 accesses the first return placement unit 53. Here, the floor 33 provided with the first return placement unit 53 accessed by the transfer unit 25 in the interlayer transfer operation is different from the floor 33 provided with the first return placement unit 53 accessed by the transfer unit 25 in the collection operation. . Therefore, the operation of the transport unit 25 accessing the first return placement unit 53 in the interlayer transport operation does not interfere with the operation of the transport unit 25 accessing the first return placement unit 53 in the collection operation.

<Operation of stocker unit 11 and indexer unit>
FIGS. 15A to 15D are diagrams schematically showing the operations of the stocker unit 11 and the indexer unit 21. FIGS. 15A to 15D show the carrier mounting portions 22A1 and 22A2 at positions different from those in FIG.

  The second transport mechanism 27 of the indexer unit 21 does not perform the supply operation. Only the first transport mechanism 26 of the indexer unit 21 performs the supply operation. The first transport mechanism 26 of the indexer unit 21 can access the carrier C mounted on the carrier mounting unit 22A, and cannot access the carrier C mounted on the carrier mounting unit 22B. Therefore, the transport unit 25 of the indexer unit 21 unloads the substrate W only from the carrier C mounted on the carrier mounting unit 22A. Therefore, in FIGS. 15A to 15D, the illustration of the carrier mounting portion 22B is omitted.

  Referring to FIG. The carrier Ca is placed on the carrier placement section 22A1. The transport unit 25 (specifically, the first transport mechanism 26) of the indexer unit 21 has already unloaded all the substrates W (for example, the substrates Wa1, Wa2, and Wa3) in the carrier Ca. The carrier Ca does not house the substrate W. The carrier Cb is placed on the carrier placement section 22A2. The carrier Cb contains an unprocessed substrate W. The transport unit 25 carries out the substrate Wb1 in the carrier Cb. The carrier Cc is placed on the shelf 13. The carrier Cc stores an unprocessed substrate W.

  Referring to FIG. The carrier transport mechanism 15 transports the carrier Ca from the carrier receiver 22A1 to the shelf 13. The transport unit 25 carries out the substrate Wb2 in the carrier Cb.

  Referring to FIG. The carrier transport mechanism 15 transports the carrier Cc from the shelf 13 to the carrier mounting section 22A1. The transport unit 25 carries out the substrate Wb3 in the carrier Cb.

  FIG. 15D is referred to. The transport unit 25 has already unloaded all the substrates W in the carrier Cb. The transport unit 25 unloads the substrate Wc1 from the carrier Cc.

  As described above, the indexer unit 21 includes the two carrier mounting units 22A1 and 22A2. Therefore, before the transport unit 25 unloads all the substrates W from the carrier Cb on the carrier mounting unit 22A2, the carrier transport mechanism 15 can mount the carrier Cc on the carrier mounting unit 22A1. Therefore, after the transport unit 25 has unloaded all the substrates W from the carrier Cb, the transport unit 25 can immediately start unloading the substrates W from the carrier Cc. Therefore, when replacing the carrier C, there is no possibility that the efficiency of the transfer of the substrate W by the transfer unit 25 is reduced.

  FIGS. 16A to 16C are diagrams schematically illustrating operations of the stocker unit 11 and the indexer unit 21. FIG. FIGS. 16A to 16C show the carrier mounting portions 22B1 and 22B2 at positions different from those in FIG.

  The first transport mechanism 26 of the indexer unit 21 does not perform a collecting operation. Only the second transport mechanism 27 of the indexer unit 21 performs the collecting operation. The second transport mechanism 27 of the indexer unit 21 can access the carrier C mounted on the carrier mounting unit 22B, and cannot access the carrier C mounted on the carrier mounting unit 22A. Therefore, the transport section 25 of the indexer section 21 loads the substrate W only into the carrier C placed on the carrier placing section 22B. Therefore, in FIGS. 16A to 16C, the illustration of the carrier mounting portion 22A is omitted.

  The collecting operation of the second transfer mechanism 27 is an operation of transferring the substrate W from the first to third stories 33a to 33c to the carrier C. The first to third layers 33a to 33c are the layers 33 through which the substrate W passes last among the first to seventh layers 33a to 33g. The first mounting portion 51 of each of the first to third stories 33a to 33c corresponds to a place where the substrate W is finally mounted before the substrate W is carried into the carrier C.

  The first to third layers 33a to 33c are examples of the last layer in the present invention.

  In the following description, when the first to third layers 33a to 33c are not particularly distinguished, they are described as layer 33out. When the main transport mechanisms 36 of the first to third layers 33a to 33c are not particularly distinguished, they are described as main transport mechanisms 36out. Unless the first placement unit 51 of the first to third layers 33a to 33c is particularly distinguished, the first placement unit 51out is described. When the first return placement section 53 of the first to third layers 33a to 33c is not particularly distinguished, it is described as a first return placement section 53out.

  Referring to FIG. The carrier Ca is placed on the carrier placement section 22B1. The carrier C is not mounted on the carrier mounting portion 22B2. The carrier Cb is placed on the shelf 13. The transport section 25 of the indexer section 21 carries the substrate W into the carrier Ca. Specifically, the second transport mechanism 27 transports the substrate Wa2 from the first placement unit 51out (specifically, the first return placement unit 53out) of the story 33out to the carrier Ca. The main transport mechanism 36out of the story 33out places the substrate Wa3 on the first placement part 51out (specifically, the first return placement part 53out) of the story 33out. The main transport mechanism 36out of the story 33out transports the substrates Wb1 and Wb2 toward the first placement section 51out of the story 33out.

  Here, the substrate Wa3 is the substrate W to be carried into the carrier Ca. The substrate Wa3 is, for example, the substrate W unloaded from the carrier Ca by the transport unit 25 of the indexer unit 21. The substrates Wb1, Wb2, and Wb3 are the substrates W to be carried into the carrier Cb. The substrates Wb1, Wb2, and Wb3 are, for example, the substrates W unloaded from the carrier Cb by the transport unit 25 of the indexer unit 21.

  Referring to FIG. The transport unit 25 carries the substrate Wa3 into the carrier Ca. The main transport mechanism 36out places the substrate Wb1 on the first placement section 51out. The control unit 107 detects an operation in which the main transport mechanism 36out places the substrate Wb1 on the first placement unit 51out (hereinafter, referred to as a “payout operation”). The control unit 107 determines the operation timing of the carrier transport mechanism 15 based on the detection result of the payout operation. The operation of the carrier transport mechanism 15 is, for example, the operation of the carrier transport mechanism 15 that transports the carrier Cb from the shelf 13 to the carrier receiver 22B2.

  Specifically, the control unit 107 counts the number of payout operations. The control unit 107 determines whether or not the number of payout operations has reached a predetermined value. The predetermined value is determined in advance. The predetermined value is determined, for example, before the substrate Wb1 is actually mounted on the first mounting portion 51out. The predetermined value is determined by information (for example, schedule information) that can be referred to by the control unit 107.

  Here, the schedule information is information on a processing schedule and a transfer schedule of the substrate W in the substrate processing apparatus 1. The schedule information is information on the relationship between the future time and the position of the substrate W. The schedule information includes, for example, information on when and where the substrate Wb1 is. For this reason, the schedule information includes information on the scheduled time at which the substrate Wb1 is to be mounted on the first mounting portion 51out. Even if the schedule information does not include the information on the above-mentioned scheduled time, the control unit 107 can estimate the above-mentioned scheduled time from the schedule information. Further, the schedule information also includes information on the transfer order of the substrates W. For example, the schedule information includes information regarding that the substrates Wa2, Wa3, Wb1, Wb2, and Wb3 are to be placed on the first placing portion 51out in this order. For example, the schedule information includes information relating to the third mounting of the substrate Wb1 on the first mounting portion 51out among the substrates Wa2, Wa3, Wb1, Wb2, and Wb3. Even if the schedule information does not include the information on the order (“third”) of the substrate Wb1 described above, the control unit 107 can estimate the order of the substrate Wb1 from the schedule information.

  For example, when the substrate Wb1 is to be placed thirdly on the first placement portion 51out, the above-described predetermined value is determined to be “3”.

  Determining whether or not the number of payout operations has reached the predetermined value corresponds to determining whether or not the substrate Wb1 has been placed on the first placement unit 51out. Determining whether or not the number of payout operations has reached the predetermined value corresponds to specifying the time at which the substrate Wb1 was actually placed on the first placement unit 51out. Here, the substrate Wb1 is the substrate W to be carried into the carrier Cb placed on the shelf 13. More specifically, the substrate Wb1 is the substrate W to be first loaded into the carrier Cb placed on the shelf 13 among the substrates Wb1, Wb2, and Wb3. The substrate Wb1 is the substrate W to be first placed on the first placing portion 51out among the substrates Wb1, Wb2, and Wb3 to be carried into the carrier Cb placed on the shelf 13. Therefore, determining whether or not the number of payout operations has reached the predetermined value means that the substrate Wb1 to be first loaded into the carrier Cb mounted on the shelf 13 is mounted on the first mounting portion 51out. This is equivalent to determining whether or not the event has occurred. Determining whether or not the number of payout operations has reached the predetermined value depends on whether or not the substrate W to be carried into the carrier Cb mounted on the shelf 13 is first mounted on the first mounting portion 51out. Is determined. Determining whether or not the number of payout operations has reached the predetermined value means that the substrate W to be first loaded into the carrier Cb mounted on the shelf 13 is actually mounted on the first mounting portion 51out. This is equivalent to specifying the time of day. Determining whether or not the number of payout operations has reached the predetermined value means that the substrate W to be carried into the carrier Cb placed on the shelf 13 is actually placed on the first placing portion 51out for the first time. This is equivalent to specifying the time.

  When the control unit 107 determines that the substrate Wb1 is placed on the first placement unit 51out, the control unit 107 starts the operation of the carrier transport mechanism 15 that transports the carrier Cb from the shelf 13 to the carrier placement unit 22B2. .

  Under the control of the control unit 107, the carrier transport mechanism 15 transports the carrier Cb from the shelf 13 to the carrier mounting unit 22B2. The carrier Cb is placed on the carrier placement section 22B2.

  Referring to FIG. The transport unit 25 loads the substrate Wb1 into the carrier Cb. The main transport mechanism 36out places the substrate Wb2 on the first placement section 51out. The carrier transport mechanism 15 transports the carrier Ca from the carrier receiver 22B1 to the shelf 13. As a result, the carrier C is not placed on the carrier placement section 22B1.

  As described above, although the scheduled time at which the substrate Wb1 is to be mounted on the first mounting portion 51out can be estimated from the schedule information, the control unit 107 determines the substrate Wb1 based on the detection result of the payout operation. Specifies the time of actual placement on the first placement section 51out. Therefore, the operation timing of the carrier transport mechanism 15 can be determined more accurately.

<Effect of First Embodiment>
The substrate processing apparatus 1 according to the first embodiment includes an indexer unit 21 and a hierarchy 33. The story 33 includes a first placement section 51. The indexer unit 21 includes carrier placement units 22A and 22B and a transport unit 25. The transport unit 25 transports the substrate W between the carrier C mounted on the carrier mounting units 22A and 22B and the first mounting unit 51. The transport unit 25 includes a first transport mechanism 26. The first transport mechanism 26 performs a supply operation of transporting the substrate W from the carrier C mounted on the carrier mounting portion 22A to the first mounting portion 51. For this reason, the main transport mechanism 36 can directly take the substrate W placed on the first placing portion 51 by the first transport mechanism 26. Therefore, the substrate W can be efficiently transferred between the first transfer mechanism 26 and the main transfer mechanism 36. Therefore, the throughput of the substrate processing apparatus 1 can be suitably improved.

  The first transport mechanism 26 performs an interlayer transport operation of transporting the substrate W between two first mounting sections 51 provided on different levels 33. Therefore, it is not necessary to separately provide the substrate processing apparatus 1 with a transport mechanism that transports the substrate W between two different levels 33 exclusively. Therefore, the footprint (installation area) of the substrate processing apparatus 1 can be suitably reduced.

  As described above, according to the substrate processing apparatus 1 of the first embodiment, the footprint of the substrate processing apparatus 1 can be reduced, and the throughput of the substrate processing apparatus 1 can be improved.

  The processing units 41 in the sixth to seventh layers 33f to 33g perform the first processing on the substrate W. The processing units 41 of the fourth to fifth layers 33d to 33e perform a second process different from the first process on the substrate W. The first transport mechanism 26 performs an interlayer transport operation for transporting the substrate W between the first placement section 51f of the sixth story 33f and the first placement section 51d of the fourth story 33d. The first transport mechanism 26 performs an interlayer transport operation for transporting the substrate W between the first placement section 51g on the seventh story 33g and the first placement section 51e on the fifth story 33e. Therefore, the first processing and the second processing can be efficiently performed on the substrate W.

  The first process includes a first pre-exposure process (specifically, an anti-reflection film forming process) performed before the exposure process. The second process includes a second pre-exposure process (specifically, a resist film forming process) that is performed before the exposure process and is different from the first pre-exposure process. Therefore, the first pre-exposure process and the second pre-exposure process can be efficiently performed on the substrate W.

  The first processing includes a first liquid processing (specifically, an antireflection film forming processing). The second processing includes a second liquid processing (specifically, a resist film forming processing) different from the first liquid processing. Therefore, the first liquid processing and the second liquid processing can be efficiently performed on the substrate.

  The first process includes an anti-reflection film forming process. The second process includes a resist film forming process. Therefore, the anti-reflection film processing and the resist film formation processing can be efficiently performed on the substrate W.

  The first transport mechanism 26 transports the substrate W from the first placement unit 51 on the sixth floor 33f to the first placement unit 51 on the fourth floor 33d. Therefore, the anti-reflection film forming process can be performed on the substrate W, and then the resist film forming process can be performed on the substrate W.

  The transfer unit 25 of the indexer unit 21 transfers the substrate W from the carrier C placed on the carrier placement unit 22A to the first placement unit 51 on the sixth to seventh layers 33f to 33g. Therefore, the substrate W can be efficiently transported from the carrier C to the floor 33 where the first processing is performed (specifically, the sixth to seventh floors 33f to 33g).

  The number of the hierarchies 33 where the first processing is performed is two. Therefore, the first processing can be performed on the substrate W in the two levels 33. Therefore, the throughput of the substrate processing apparatus 1 can be suitably improved.

  The number of the hierarchies 33 where the second processing is performed is two. In the two levels 33, a second process can be performed on the substrate. Therefore, the throughput of the substrate processing apparatus 1 can be suitably improved.

  The processing units 41 of the first to third layers 33a to 33c perform the third processing on the substrate W. The third processing includes a development processing. Therefore, the development processing can be efficiently performed on the substrate W.

  The transport unit 25 transports the substrate W from the first placement unit 51 on the first to third stories 33a to 33c to the carrier C placed on the carrier placement unit 22B. Therefore, the substrate W after the development processing can be efficiently transported to the carrier C.

  The number of the hierarchies 33 at which the third processing is performed is three. Therefore, the third processing can be performed on the substrate W in the three levels 33. Therefore, the throughput of the substrate processing apparatus 1 can be suitably improved.

  The transport unit 73 of the interface unit 71 transports the substrate W between the second placement unit 56 and the exposure machine EXP. However, the transport unit 73 of the interface unit 71 does not perform the interlayer transport operation. Specifically, the transfer unit 73 of the interface unit 71 does not transfer the substrate W between the two second placement units 56 provided on different levels 33. Therefore, the transport unit 73 of the interface unit 71 can efficiently transport the substrate W between the story 33 and the exposure machine EXP.

  The interface unit 71 includes a cleaning unit 91 and a heat treatment unit 101. The transport unit 73 of the interface unit 71 further transports the substrate W to the cleaning unit 91 and the heat treatment unit 101. As described above, the transport unit 73 of the interface unit 71 does not perform the interlayer transport operation. Therefore, even when the interface unit 71 includes the cleaning unit 91 and the heat treatment unit 101, it is possible to prevent the transport load of the transport unit 73 of the interface unit 71 from becoming excessively large. Therefore, the transport unit 73 of the interface unit 71 can efficiently transport the substrate W to the cleaning unit 91 and the heat treatment unit 101. As described above, when the interface unit 71 includes the cleaning unit 91 and the heat treatment unit 101, the merit that the transport unit 73 of the interface unit 71 does not perform the interlayer transport operation is particularly great.

  The first mounting portion 51 includes a first feed mounting portion 52 on which the transport portion 25 of the indexer portion 21 mounts the substrate W, and a first return mounting portion on which the main transport mechanism 36 exclusively mounts the substrate W. 53 is provided. Therefore, the transport operation of the transport unit 25 of the indexer unit 21 can be simplified. Therefore, the transport unit 25 of the indexer unit 21 can transport the substrate W between the carrier C and the floor 33 more efficiently. Similarly, the transfer operation of the main transfer mechanism 36 can be simplified. Therefore, the main transport mechanism 36 can transport the substrate W more efficiently.

  The transport section 25 of the indexer section 21 places two substrates W on the first feed placement section 52 at the same time. The first feed mounting unit 52 is configured so that at least four or more substrates W can be mounted on the first feed mounting unit 52. For this reason, the transport unit 25 of the indexer unit 21 can perform the operation of mounting the substrate W on the first feed mounting unit 52 without delay.

  The transport unit 25 of the indexer unit 21 takes two substrates W from the first return placement unit 53 at the same time. The first return placement unit 53 is configured so that at least four or more substrates W can be placed on the first return placement unit 53. Therefore, the transfer unit 25 of the indexer unit 21 can perform the operation of removing the substrate W from the first return placement unit 53 without delay.

  The transport section 25 of the indexer section 21 includes a second transport mechanism 27. Therefore, the transport unit 25 of the indexer unit 21 can transport the substrate W more efficiently.

  The first transport mechanism 26 performs a supply operation. The second transport mechanism 27 performs a collecting operation. For this reason, the transport unit 25 of the indexer unit 21 can suitably perform both the supply operation and the collection operation.

  The first transport mechanism 26 does not perform a collecting operation. Therefore, the operation of the first transport mechanism 26 can be simplified.

  The second transport mechanism 27 does not perform a supply operation. Therefore, the operation of the second transport mechanism 27 can be simplified.

  The layer 33out (specifically, the first to third layers 33a to 33c) corresponds to the last layer. The transport section 25 of the indexer section 21 transports the substrate from the first placement section 51out of the story 33out to the carrier C placed on the carrier placement section 22B. The control unit 107 detects a payout operation in which the main transport mechanism 36out of the story 33out places the substrate W on the first placement part 51out of the story 33out. Therefore, the control unit 107 can specify the time at which the main transport mechanism 36out of the story 33out actually placed the substrate W on the first placement unit 51out. The control unit 107 determines the operation timing of the carrier transport mechanism 15 based on the detection result of the payout operation of the main transport mechanism 36out in the floor 33out. Therefore, the carrier transport mechanism 15 can always transport the carrier C to the carrier receiver 22B at an appropriate timing. As a result, the collection operation by the transport unit 25 of the indexer unit 21 can be performed without delay. For example, it is possible to suitably prevent the efficiency of the collection operation by the transport unit 25 of the indexer unit 21 from being reduced due to a delay in the transport of the carrier C by the carrier transport mechanism 15. As described above, the collection operation by the transport unit 25 of the indexer unit 21 and the transport operation of the carrier C by the carrier transport mechanism 15 can be favorably linked in time.

  Based on the detection result of the payout operation of the main transport mechanism 36out of the story 33out, the control unit 107 transfers the substrate W to be loaded into the carrier C placed on the shelf 13 to the first placement part 51out of the story 33out. It is determined whether or not it has been placed. When the control unit 107 determines that the substrate W to be carried into the carrier C placed on the shelf 13 is placed on the first placement unit 51out of the story 33out, the control unit 107 sets the shelf 13 Then, the operation of the carrier transport mechanism 15 for transporting the carrier C to the carrier receiver 22B is started. Therefore, the carrier transport mechanism 15 can surely place the appropriate carrier C on the carrier receiver 22B before the transport unit 25 of the indexer unit 21 starts the collecting operation. For example, before the transport unit 25 of the indexer unit 21 starts the collecting operation on the substrate Wb1, the carrier transport mechanism 15 can surely place the carrier Cb that is to accommodate the substrate Wb1 on the carrier mounting unit 22B. As a result, the collection operation by the transport unit 25 of the indexer unit 21 can be performed without delay.

  The substrate processing method according to the first embodiment includes a supply step, a processing step, an interlayer transport step, and a collection step. In the supplying step, the substrate is transferred from the carrier C to at least one of the stories 33. In the processing step, processing is performed on the substrate W while transporting the substrate W in each story 33. In the processing step, processing is performed on each substrate W in at least two or more layers 33. In the interlayer transfer step, the substrate W is transferred between two different levels 33. In the collecting step, the substrate W is transferred from at least one of the stories 33 to the carrier C. The supply step is performed by one transport mechanism (that is, the first transport mechanism 26). Therefore, the substrate W can be efficiently transported from the carrier C to the floor 33. Therefore, the processing steps can be executed efficiently. Therefore, the throughput of the substrate processing can be suitably improved.

  The interlayer transport process is performed by one transport mechanism that performs the supply process (that is, the first transport mechanism 26). That is, one transport mechanism (that is, the first transport mechanism 26) executes the supply step and the interlayer transport step. Therefore, it is not necessary to separately provide the substrate processing apparatus 1 with a transport mechanism that transports the substrate W between two different levels 33 exclusively. Therefore, a space for executing the substrate processing method can be suitably reduced.

  The collection process is performed by one transport mechanism (that is, the second transport mechanism 27). Therefore, the substrate W can be efficiently transferred from the floor 33 to the carrier C. Therefore, the processing steps can be executed efficiently. Therefore, the throughput of the substrate processing can be suitably improved.

  The pump chamber 61 is arranged at a position that does not overlap the story 33 in plan view. For this reason, it is possible to preferably prevent the length of the processing unit 41 in the vertical direction Z (that is, the height of the processing unit 41) from becoming excessively large.

  The area of the pump chamber 61 in a plan view is relatively small. For this reason, it is possible to preferably prevent the footprint of the substrate processing apparatus 1 from becoming excessively large.

[Second embodiment]
A substrate processing apparatus 1 according to a second embodiment will be described with reference to the drawings. Note that the same components as those of the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

  FIG. 17 is a plan view of the substrate processing apparatus 1 according to the second embodiment. FIG. 18 is a left side view illustrating the configuration of the left part of the substrate processing apparatus 1. The substrate processing apparatus 1 according to the second embodiment differs from the substrate processing apparatus 1 according to the first embodiment in the configuration of the processing unit 31.

  The processing block 31 includes a plurality (for example, six) of hierarchies 33.

The liquid processing unit 42 of each level 33 includes a plurality (for example, four) of liquid processing units 43.
The liquid processing units 43 are arranged in a line in the front-rear direction X.

  The heat treatment section 47 of each layer 33 includes a plurality (for example, 15) of heat treatment units 48. The heat treatment units 48 are arranged in a matrix in a side view. For example, the heat treatment units 48 are arranged in five rows in the front-back direction X and in three stages in the vertical direction Z.

  Referring to FIG. The processing performed on the substrate W by each layer 33 will be described. For convenience, the layers 33 are referred to as a first layer 33a, a second layer 33b, a third layer 33c, a fourth layer 33d, a fifth layer 33e, and a sixth layer 33f from bottom to top. The first hierarchy 33a is the lowest in the hierarchy 33. The sixth hierarchy 33f is the highest in the hierarchy 33.

  The processing units 41 in the fifth to sixth layers 33e to 33f perform the same processing on the substrate W. The processing performed on the substrate W by the processing units 41 in the fifth to sixth layers 33e to 33f includes an antireflection film forming process and a resist film forming process.

  The processing units 41 in the third to fourth layers 33c to 33d perform the same processing on the substrate W. The processing performed on the substrate W by the processing units 41 on the third to fourth layers 33c to 33d includes a protective film forming processing for forming a protective film for protecting the resist film on the substrate W. The processing performed on the substrate W by the processing units 41 of the third to fourth layers 33c to 33d further includes a negative tone development processing.

  The processing units 41 of the first and second layers 33a to 33b perform the same processing on the substrate W. The processing performed on the substrate W by the processing units 41 of the first and second layers 33a to 33b includes a positive tone development processing.

  The processing performed on the substrate W by the processing units 41 in the fifth to sixth layers 33e to 33f does not include the protective film forming processing, the negative tone developing processing, and the positive tone developing processing. The processing performed on the substrate W by the processing units 41 of the third to fourth layers 33c to 33d does not include the anti-reflection film formation processing, the resist film formation processing, and the positive tone development processing. The processing performed on the substrate W by the processing units 41 of the first and second layers 33a to 33b does not include an antireflection film forming process, a resist film forming process, a protective film forming process, and a negative tone developing process.

  The antireflection film forming process, the resist film forming process, the protective film forming process, the negative tone developing process, and the positive tone developing process all belong to the liquid process. The anti-reflection film forming process, the resist film forming process, and the protective film forming process belong to the pre-exposure process. The negative tone development processing and the positive tone development processing belong to post-exposure processing.

  The entire anti-reflection film forming process and the resist film forming process are examples of the first pre-exposure process in the present invention. The protective film forming process is an example of the second pre-exposure process in the present invention.

  The details of the configuration of the processing unit 41 described above differ between the hierarchies 33 according to the difference in the processing between the hierarchies 33. Hereinafter, a specific description will be given.

  The liquid processing units 42 of the fifth to sixth layers 33e to 33g use an antireflection film material and a resist film material as processing liquids. The two liquid processing units 43 on the fifth level 33e correspond to the antireflection film coating unit BARC. The remaining two liquid processing units 43 on the fifth level 33e correspond to the resist film coating cloth unit RESIST. Similarly, the two liquid processing units 43 on the sixth level 33f correspond to the antireflection film coating unit BARC. The remaining two liquid processing units 43 on the sixth level 33f correspond to the resist film coating cloth unit RESIST.

  The liquid processing section 42 of the third to fourth layers 33c to 33d uses a protective film material and a developing solution for negative tone development as a processing solution. The two liquid processing units 43 on the third level 33c correspond to the protective film coating unit TC. The remaining two liquid processing units 43 on the third level 33c correspond to the negative tone developing unit NTD. Similarly, the two liquid processing units 43 on the fourth level 33d correspond to the protective film coating unit TC. The remaining two liquid processing units 43 on the fourth level 33d correspond to the negative tone developing unit NTD.

  The liquid processing units 42 of the first and second layers 33a to 33b use a developer for positive tone development as a processing liquid. The liquid processing units 43 in the first level 33a and the second level 33b correspond to the positive tone developing unit PTD.

  The processing performed on the substrate W by the processing units 41 in the fifth to sixth layers 33e to 33f further includes a hydrophobic processing, a heating processing, and a cooling processing. Although not shown, the heat treatment unit 47 of the fifth to sixth layers 33e to 33f includes a hydrophobization unit AHP, a heating unit HP, and a cooling unit CP as a heat treatment unit 48.

  The processing performed on the substrate W by the processing units 41 in the third to fourth layers 33c to 33d further includes a heating processing and a cooling processing. The heat treatment units 47 of the third to fourth layers 33c to 33d include a heating unit HP and a cooling unit CP as a heat treatment unit 48.

  The processing performed on the substrate W by the processing units 41 of the first and second layers 33a to 33b further includes a heating processing and a cooling processing. The heat treatment unit 47 of the first to second layers 33a to 33b includes a heating unit HP and a cooling unit CP as a heat treatment unit 48.

  The processing performed on the substrate W by the processing units 41 in the fifth to sixth layers 33e to 33f is an example of the first processing in the present invention. The fifth to sixth layers 33e to 33f are examples of layers in which the first processing in the present invention is performed. The processing performed on the substrate W by the processing units 41 of the third to fourth layers 33c to 33d (specifically, the protective film forming processing performed on the substrate W by the protective film coating unit TC) is the processing of the second processing in the present invention. It is an example. The third to fourth layers 33c to 33d are examples of layers in which the second processing in the present invention is performed. The processing units 41 of the third to fourth layers 33c to 33d further perform a process of developing the substrate W. The configuration of the processing unit 41 of the third to fourth layers 33c to 33d is such that the processing unit of the layer where the second processing is performed further performs a process of developing a substrate. It is an example. The processing performed on the substrate W by the processing units 41 of the first and second layers 33a to 33b is an example of the third processing in the present invention. The first to second layers 33a to 33b are examples of layers in which the third processing in the present invention is performed.

<Operation of substrate processing equipment>
19 (a), 19 (b), and 19 (c) are diagrams schematically illustrating the outline of the transport route of the substrate W. The substrate processing apparatus 1 according to the second embodiment has various operation examples. Hereinafter, three operation examples will be exemplified.

  FIG. 19A shows a first operation example. FIG. 19A schematically shows the transfer route of the substrate W by a dashed line. In the first operation example, an antireflection film forming process, a resist film forming process, a protective film forming process, and a positive tone developing process are performed on the substrate W. In the first operation example, each substrate W is processed in three levels 33.

  FIG. 19B shows a second operation example. FIG. 19B schematically shows the transfer route of the substrate W by a dashed line. In the second operation example, an anti-reflection film forming process, a resist film forming process, and a negative tone developing process are performed on the substrate W. In the second operation example, each substrate W is processed in two levels 33.

  FIG. 19C shows a third operation example. FIG. 19C shows the transfer route of the substrate W by a dashed line and a broken line. In the third operation example, an anti-reflection film forming process, a resist film forming process, a protective film forming process, and a positive tone developing process are performed on some of the substrates W (hereinafter, referred to as a first substrate W). The first substrate W is processed in three levels 33. The dashed line in FIG. 19C schematically shows the transport path of the first substrate W. The anti-reflection film forming process, the resist film forming process, and the negative tone developing process are performed on another substrate W (hereinafter, referred to as a second substrate W). The second substrate W is processed in two levels 33. The dashed line in FIG. 19C schematically shows the transport path of the second substrate W.

  First to third operation examples will be specifically described.

<< First operation example >>
Referring to FIG. The first transport mechanism 26 of the indexer unit 21 performs a supply operation. Specifically, the first transport mechanism 26 transports the substrate W from the carrier C of the carrier receiver 22A to the first receivers 51e and 51f of the fifth to sixth layers 33e to 33f.

  The processing units 41 in the fifth to sixth layers 33e to 33f perform processing on the substrate W, respectively. Specifically, the processing units 41 of the fifth to sixth layers 33e to 33f perform processes including an antireflection film forming process and a resist film forming process. The substrate W on which the processing in the fifth to sixth layers 33e to 33f has been performed is placed on the first placement units 51e and 51f of the fifth to sixth layers 33e to 33f.

  The first transport mechanism 26 performs an interlayer transport operation. Specifically, the first transport mechanism 26 transports the substrate W from the first mounting portion 51e of the fifth hierarchy 33e to the first mounting portion 51c of the third hierarchy 33c. The first transport mechanism 26 transports the substrate W from the first placement unit 51f on the sixth floor 33f to the first placement unit 51d on the fourth floor 33d.

  The processing units 41 in the third to fourth layers 33c to 33d perform processing on the substrate W, respectively. Specifically, the processing unit 41 of the third to fourth layers 33c to 33d performs a process including a protective film forming process on the substrate W. However, the processing units 41 in the third to fourth layers 33c to 33d do not perform the negative tone development processing on the substrate W. The substrate W that has been processed in the third to fourth layers 33c to 33d is placed on the second placement units 56c and 56d in the third to fourth layers 33c to 33d.

  The transport unit 73 of the interface unit 71 transports the substrate W from the third to fourth layers 33c to 33d to the exposure machine EXP. Further, the transport unit 73 of the interface unit 71 transports the substrate W from the exposure machine EXP to the first and second stories 33a-33b. At this time, the cleaning unit 91 and the heat treatment unit 101 of the interface unit 71 may perform processing on the substrate W.

  The processing units 41 of the first and second layers 33a and 33b respectively perform processing on the substrate W. Specifically, the processing units 41 in the first and second layers 33a to 33b respectively perform the processing including the positive tone development processing on the substrate W. The substrate W subjected to the processing in the first and second layers 33a and 33b is placed on the first placement units 51a and 51b in the first and second layers 33a and 33b.

  The second transport mechanism 27 of the indexer unit 21 performs a collecting operation. More specifically, the second transport mechanism 27 transports the substrate W from the first receivers 51a and 51b of the first and second transport mechanisms to the carrier C mounted on the carrier receiver 22B.

  As described above, in the first operation example, the first transport mechanism 26 performs the supply operation and the interlayer transport operation. The second transport mechanism 27 performs a collecting operation. The transport section 73 of the interface section 71 does not perform the interlayer transport operation.

  In the first operation example, the substrate W is transported to all stories 33a to 33f. In the operation example of FIG. 19A, the processing for the substrate W is performed in all the hierarchies 33a to 33f.

  In the first operation example, the first and second layers 33a-33b are examples of the last layer in the present invention.

<<< second operation example >>>
Referring to FIG. The first transport mechanism 26 of the indexer unit 21 performs a supply operation. Specifically, the first transport mechanism 26 transports the substrate W from the carrier C of the carrier receiver 22A to the first receivers 51e and 51f of the fifth to sixth layers 33e to 33f.

  The processing units 41 in the fifth to sixth layers 33e to 33f perform processing on the substrate W, respectively. Specifically, the processing units 41 of the fifth to sixth layers 33e to 33f perform processes including an antireflection film forming process and a resist film forming process. The substrate W subjected to the processing in the fifth to sixth layers 33e to 33f is placed on the second placement units 56e and 56f in the fifth to sixth layers 33e to 33f.

  The transfer unit 73 of the interface unit 71 transfers the substrate W from the fifth to sixth layers 33e to 33f to the exposure machine EXP. Further, the transport unit 73 of the interface unit 71 transports the substrate W from the exposure machine EXP to the third to fourth layers 33c to 33d.

  The processing units 41 in the third to fourth layers 33c to 33d perform processing on the substrate W, respectively. Specifically, the processing units 41 of the third to fourth layers 33c to 33d perform processing including negative tone development processing on the substrate W. However, the processing units 41 of the third to fourth layers 33c to 33d do not perform the protection film formation processing on the substrate W. The substrate W on which the processing in the third to fourth layers 33c to 33d has been performed is placed on the first placement units 51c and 51d in the third to fourth layers 33c to 33d.

  The second transport mechanism 27 of the indexer unit 21 performs a collecting operation. Specifically, the second transport mechanism 27 transports the substrate W from the first placement sections 51c and 51d on the third to fourth layers 33c to 33d to the carrier C placed on the carrier placement section 22B.

  As described above, in the second operation example, the first transport mechanism 26 performs the supply operation. The second transport mechanism 27 performs a collecting operation. However, since the second operation example does not require the interlayer transport operation, neither the first transport mechanism 26 nor the second transport mechanism 27 performs the interlayer transport operation.

  In the second operation example, the substrate W is transported to only some of the stories 33. In the second operation example, the substrate W is transported to the third to sixth levels 33c to 33f, and the substrate W is not transported to the first to second levels 33a to 33b. In the second operation example, the processing for the substrate W is performed only in some of the layers 33. In the second operation example, the processing on the substrate W is performed on the third to sixth layers 33c to 33f, and the processing on the substrate W is not performed on the first and second layers 33a to 33b.

  In the second operation example, the third to fourth layers 33c to 33d are examples of the last layer in the present invention.

<<< third operation example >>>
The first transport mechanism 26 of the indexer unit 21 performs a supply operation. Specifically, the first transport mechanism 26 transports the first substrate W from the carrier C of the carrier receiver 22A to the first receiver 51e of the fifth floor 33e. The first transport mechanism 26 transports the second substrate W from the carrier C of the carrier receiver 22A to the first receiver 51f of the sixth floor 33f.

  The processing units 41 in the fifth to sixth layers 33e to 33f perform processing on the substrate W, respectively. Specifically, the processing units 41 of the fifth to sixth layers 33e to 33f perform processing including anti-reflection film formation processing and resist film formation processing on the first and second substrates W. The first substrate W subjected to the processing in the fifth hierarchy 33e is mounted on the first mounting portion 51e of the fifth hierarchy 33e. The second substrate W subjected to the processing in the sixth floor 33f is placed on the second placement part 56f in the sixth floor 33f.

  The first transport mechanism 26 performs an interlayer transport operation. Specifically, the first transport mechanism 26 transports the first substrate W from the first mounting portion 51e of the fifth hierarchy 33e to the first mounting portion 51c of the third hierarchy 33c.

  The processing unit 41 of the third hierarchy 33c performs processing on the first substrate W. Specifically, the processing unit 41 of the third hierarchy 33c performs a process including a protective film forming process on the first substrate W. However, the processing unit 41 of the third hierarchy 33c does not perform the negative tone development processing on the first substrate W. The first substrate W subjected to the processing in the third hierarchy 33c is placed on the second placement portion 56c in the third hierarchy 33c.

  The transport section 73 of the interface section 71 transports the first substrate W from the second placement section 56c of the third story 33c to the second placement section 56a of the first story 33a via the exposing machine EXP. The transport unit 73 of the interface unit 71 transports the second substrate W from the second placement unit 56f of the sixth floor 33f to the second placement unit 56d of the fourth floor 33d via the exposing machine EXP.

  The processing unit 41 of the first hierarchy 33a performs processing on the first substrate W. Specifically, the processing unit 41 of the first hierarchy 33a performs a process including a positive tone development process on the first substrate W. The first substrate W on which the processing in the first hierarchy 33a has been performed is mounted on the first mounting portion 51a of the first hierarchy 33a.

  The processing unit 41 of the fourth hierarchy 33d performs processing on the second substrate W. Specifically, the processing unit 41 of the fourth hierarchy 33d performs a process including a negative tone development process on the second substrate W. However, the processing unit 41 of the fourth hierarchy 33d does not perform the protection film forming process on the second substrate W. The second substrate W on which the processing in the fourth hierarchy 33d has been performed is placed on the first placement unit 51d in the fourth hierarchy 33d.

  The second transport mechanism 27 of the indexer unit 21 performs a collecting operation. Specifically, the second transport mechanism 27 transfers the first and second carriers to the carrier C placed on the carrier placing portion 22B from the first placing portions 51a and 51d of the first and fourth layers 33a and 33d. The substrate W is transported.

  As described above, in the third operation example, the first transport mechanism 26 performs the supply operation and the interlayer transport operation. The second transport mechanism 27 performs a collecting operation.

  In the third operation example, the substrate W is transported to only some of the stories 33. In the third operation example, the substrate W is transported to the first and third to sixth levels 33a and 33c to 33f, and the substrate W is not transported to the second level 33b. In the third operation example, the processing for the substrate W is performed only in some of the layers 33. In the third operation example, the processing for the substrate W is performed in the first and third to sixth layers 33a and 33c to 33f, and the processing for the substrate W is not performed in the second layer 33b.

  In the third operation example, the first hierarchy 33a and the fourth hierarchy 33d are examples of the final hierarchy in the present invention.

<Effect of Second Embodiment>
The substrate processing apparatus 1 according to the second embodiment has the same advantages as the substrate processing apparatus 1 according to the first embodiment. For example, since the first transport mechanism 26 performs the supply operation and the interlayer transport operation, the footprint of the substrate processing apparatus 1 can be reduced, and the throughput of the substrate processing apparatus 1 can be improved.

  The processing performed in the fifth to sixth layers 33e to 33f includes an antireflection film forming processing and a resist film forming processing, and the processing performed in the third to fourth layers 33c to 33d includes a protective film forming processing. Therefore, the antireflection film processing, the resist film formation processing, and the protection film formation processing can be efficiently performed on the substrate.

  In the first operation example, the first transport mechanism 26 performs the third processing to perform the second processing from the first placement units 51e to 51f of the fifth to sixth stories 33e to 33f where the first processing is performed. The substrate W is transported to the first placement sections 51c to 51d of the stories 33c to 33d. Therefore, the anti-reflection film forming process and the resist film forming process can be performed on the substrate W, and thereafter, the protective film forming process can be performed on the substrate W.

  Similarly, in the third operation example, the anti-reflection film forming process and the resist film forming process can be performed on the first substrate W, and then the protective film forming process can be performed on the first substrate W.

  The processing performed in the third to fourth layers 33c to 33d further includes a development processing. Therefore, the development processing can be efficiently performed on the substrate W.

  In the first operation example, the second transport mechanism 27 of the indexer unit 21 transports the substrate W to the carrier C from the first placement units 51a and 51b of the first and second stories 33a and 33b. In the second operation example, the second transport mechanism 27 of the indexer unit 21 transports the substrate W to the carrier C from the first placement units 51c and 51d of the third to fourth stories 33c to 33d. In the third operation example, the second transport mechanism 27 of the indexer unit 21 transports the substrate W to the carrier C from the first placement units 51a and 51d of the first and fourth stories 33a and 33d. Therefore, the substrate W after the development processing can be efficiently transported to the carrier C.

  The processing units 41 of the third to fourth layers 33c to 33d perform negative tone development processing. The processing units 41 of the first and second layers 33a-33b perform positive tone development processing. Therefore, the negative tone development process and the positive tone development process can be selectively performed on the substrate W.

  The present invention is not limited to the first and second embodiments, but can be modified as follows.

  In the first and second embodiments described above, the first transport mechanism 26 of the indexer unit 21 performs the supply operation and the interlayer transport operation. However, it is not limited to this. For example, the first transport mechanism 26 may perform the recovery operation and the interlayer transport operation without performing the supply operation. For example, the first transport mechanism 26 may perform a supply operation, a recovery operation, and an interlayer transport operation.

  In the first and second embodiments described above, the second transport mechanism 27 of the indexer unit 21 performs the collecting operation. However, it is not limited to this. For example, the second transport mechanism 27 may perform an interlayer transport operation. By performing the interlayer transport operation by both the first transport mechanism 26 and the second transport mechanism 27, the substrate W can be more efficiently transported between two different levels 33.

  For example, the second transport mechanism 27 may perform at least one of the two interlayer transport operations shown in FIGS. For example, the first transport mechanism 26 transports the substrate W from the first mounting portion 51 of the sixth hierarchy 33f to the first mounting portion 51 of the fourth hierarchy 33d, and the second transport mechanism 27 performs transport of the substrate W on the seventh hierarchy 33g. The substrate W may be transferred from the first mounting portion 51 to the first mounting portion 51 on the fifth level 33e.

  For example, the second transport mechanism 27 may perform at least one of a collection operation, a supply operation, and an interlayer transport operation. For example, the second transport mechanism 27 may perform a supply operation.

  In the first and second embodiments described above, the processing performed in each layer 33 has been exemplified. However, it is not limited to this. The processing performed in each hierarchy 33 can be flexibly changed. For example, the processing performed in some layers 33 may include an anti-reflection film forming processing, and the processing performed in other layers 33 may include a resist film forming processing and a protective film forming processing. For example, the processing performed in some layers 33 may include an anti-reflection film formation processing and a protection film formation processing, and the processing performed in the other layers 33 may include a resist film formation processing.

  In the first and second embodiments described above, the anti-reflection film forming process, the resist film forming process, the protective film forming process, and the developing process are exemplified as the liquid process. However, it is not limited to this. The cleaning process is also an example of the liquid process. For example, the processing performed in some layers 33 may include a cleaning processing. For example, the processing performed in some layers 33 may include a pre-exposure cleaning processing. For example, the processing performed in some of the layers 33 may include a post-exposure cleaning processing. For example, the liquid processing units 42 of some of the stories 33 may include a cleaning unit. For example, the liquid processing units 42 of some layers 33 may include a pre-exposure cleaning unit. For example, the liquid processing units 42 of some layers 33 may include a post-exposure cleaning unit.

  In the first and second embodiments described above, the heat treatment unit 101 of the interface unit 71 includes the post-exposure heating units 103 and 105. The heat treatment section 47 of the story 33 did not have a post-exposure heating unit. However, it is not limited to this. For example, level 33 may include a post-exposure heating unit. The heat treatment section 47 of the story 33 may include a post-exposure heating unit. For example, in the first embodiment, the heat treatment units 47 of the first to third layers 33a to 33c may include a post-exposure heating unit. For example, in the second embodiment, the heat treatment units 47 of the first and second layers 33a to 33b may include a post-exposure heating unit. For example, in the second embodiment, the heat treatment units 47 in the third to fourth layers 33c to 33d may include post-exposure heating units. For example, the post-exposure heating units 103 and 105 of the interface unit 71 may be omitted. For example, the heat treatment unit 101 of the interface unit 71 may be omitted.

  In the first embodiment described above, the sixth to seventh layers 33f to 33g have both performed the processing including the anti-reflection film formation processing (the first processing). That is, the number of the hierarchies 33 performing the first processing is two. However, it is not limited to this. The number of the hierarchies 33 performing the first processing may be one or three.

  In the first embodiment described above, the fourth to fifth layers 33d to 33e have all performed the processing including the resist film formation processing (the second processing). That is, the number of the hierarchies 33 for performing the second processing is two. However, it is not limited to this. The number of the hierarchies 33 for performing the second processing may be one or three.

  In the first embodiment described above, the first to third layers 33a to 33c have all performed the processing including the development processing (third processing). That is, the number of the hierarchies 33 for performing the third processing is three. However, it is not limited to this. The number of the hierarchies 33 for performing the third processing may be one, two, or four.

  For example, the number of the hierarchies 33 for performing the third processing may be zero. That is, the first to third layers 33a to 33c may be omitted. In this case, the fourth to fifth layers 33d to 33e are examples of the final layer in the present invention.

  The first to fourth modified embodiments will be described with reference to the drawings. Note that the same components as those in the first embodiment or the second embodiment are denoted by the same reference numerals, and detailed description is omitted.

<First Modified Embodiment>
FIG. 20 is a left side view illustrating the configuration of the left part of the substrate processing apparatus 1 according to the first modified embodiment. The substrate processing apparatus 1 according to the first modified embodiment includes more layers 33 where the first processing is performed than the substrate processing apparatus 1 according to the second embodiment. The substrate processing apparatus 1 according to the first modified embodiment includes more layers 33 at which the third processing is performed than the substrate processing apparatus 1 according to the second embodiment.

  Specifically, the processing block 31 includes a plurality (for example, eight) of hierarchies 33. For convenience, each layer 33 is called a first layer 33a, a second layer 33b, a third layer 33c, a fourth layer 33d, a fifth layer 33e, a sixth layer 33f, a seventh layer 33g, and an eighth layer 33h. In the later-described second to fourth modified embodiments, each layer 33 is similarly described.

  The processing units 41 in the sixth to eighth layers 33f to 33h perform the same processing on the substrate W. The processing units 41 of the sixth to eighth layers 33f to 33h respectively perform the first processing on the substrate W. The first process includes a resist film forming process. The first process may further include an anti-reflection film forming process, or may not include an anti-reflection film forming process. Each of the processing units 41 in the sixth to eighth layers 33f to 33h includes two antireflection film application units BARC and two resist film application cloth units RESIST.

  The processing units 41 of the fourth to fifth layers 33d to 33e perform the same processing on the substrate W. The processing units 41 of the fourth to fifth layers 33d to 33e respectively perform the second processing and the developing processing on the substrate W. The second process includes a protective film forming process. The development processing in the fourth to fifth layers 33d to 33e is, specifically, an organic development processing. In the organic development processing, a developer containing an organic solvent is supplied to the substrate W. The organic solvent is, for example, butyl acetate (Butyl Acetate). The processing units 41 in the fourth to fifth layers 33d to 33e each include two protective film coating units TC and two organic developing units SD2.

  The processing units 41 in the first to third layers 33a to 33c perform the same processing on the substrate W. The processing units 41 of the first to third layers 33a to 33c respectively perform the third processing on the substrate W. The third processing includes a development processing. The development processing included in the third processing is, specifically, an alkali development processing. In the alkali developing treatment, an alkaline aqueous solution is supplied to the substrate W as a developing solution. The alkaline aqueous solution is, for example, tetramethyl ammonium hydroxide (TMAH: Tetra Methyl Ammonium Hydroxide) or potassium hydroxide (KOH: Potassium Hydroxide). Each of the processing units 41 in the first to third layers 33a to 33c includes four alkaline developing units SD1.

  The first processing is different from the second processing. The first processing is different from the third processing. The second processing is different from the third processing. The first process does not include the protective film forming process and the developing process. The second process does not include the anti-reflection film forming process, the resist film forming process, and the developing process. The third process does not include the anti-reflection film forming process, the resist film forming process, and the protective film forming process.

  The anti-reflection film forming process and the resist film forming process are examples of the first liquid process in the present invention. The anti-reflection film forming process and the resist film forming process are examples of the first pre-exposure process in the present invention. The protective film forming process is an example of the second liquid process in the present invention. The protective film forming process is an example of the second pre-exposure process in the present invention.

  The sixth to eighth layers 33f to 33h are examples of the “layer where the first processing is performed” in the present invention. The fourth to fifth layers 33d to 33e are examples of the “layer in which the second processing is performed” in the present invention. The first to third layers 33a to 33c are examples of the “layer in which the third processing is performed” in the present invention.

  21 (a) -21 (c) and 22 (a) -22 (c) are diagrams schematically showing the outline of the transport route of the substrate W. For convenience, the first placement units 51 provided in the first to eighth layers 33a to 33h are referred to as first placement units 51a to 51h. The second mounting portions 56 provided in the first to eighth layers 33a to 33h are referred to as second mounting portions 56a to 56h. In the second to fourth modified embodiments described later, each of the first mounting portions 51 and each of the second mounting portions 56 are similarly described. An operation example of the substrate processing apparatus 1 according to the first modified embodiment will be described below.

  FIG. 21A shows a first operation example. FIG. 21A schematically shows a transfer route of the substrate W by a dashed line. In the first operation example, the first transport mechanism 26 performs a supply operation and an interlayer transport operation. The second transport mechanism 27 performs a collecting operation. Thus, the first processing, the second processing, and the third processing are performed on the substrate W in this order. However, the development processing in the fourth to fifth layers 33d to 33e is not performed on the substrate W. For this reason, in FIG. 21A, the notation of the symbol “SD2” indicating the organic developing units provided in the fourth to fifth layers 33d to 33e is omitted. That is, in FIG. 21A, reference numerals indicating processing units that perform processing on the substrate W are described, and reference numerals of processing units that do not perform processing on the substrate W are omitted. Similarly, in the drawings showing other operation examples of the first to fourth modified embodiments to be described later, the description of the reference numerals of the processing units that do not process the substrate W is omitted. Hereinafter, the first operation example will be specifically described.

  The first transport mechanism 26 performs a supply operation. Specifically, the first transport mechanism 26 transports the substrate W from the carrier C mounted on the carrier mounting unit 22A to the first mounting units 51f to 51h on the sixth to eighth layers 33f to 33h.

  The processing units 41 in the sixth to eighth layers 33f to 33h respectively perform the first processing (more specifically, the processing including the resist film forming processing) on the substrate W.

  For example, the processing units 41 in the sixth to eighth layers 33f to 33h may perform the anti-reflection film forming process and the resist film forming process on the substrate W, respectively. Alternatively, the processing units 41 of the sixth to eighth layers 33f to 33h may perform the resist film forming process on the substrate W without performing the antireflection film forming process on the substrate W, respectively. In other operation examples described later, the first processing may be similarly performed. Further, in the operation example of the second to fourth modified embodiments described later, the first processing may be similarly performed.

  The first transport mechanism 26 performs an interlayer transport operation. Specifically, the first transport mechanism 26 moves from the first mounting portion 51f-51h on the sixth-eighth level 33f-33h to the first mounting portion 51d-51e on the fourth-fifth level 33d-33e. The substrate W is transported.

  The processing units 41 in the fourth to fifth layers 33d to 33e respectively perform the second processing (more specifically, the processing including the protective film forming processing) on the substrate W. However, the processing units 41 of the fourth to fifth layers 33d to 33e do not perform the developing process on the substrate W.

  The transfer unit 73 of the interface unit 71 transfers the substrate W from the second placement units 56d to 56e of the fourth to fifth layers 33d to 33e to the exposure machine EXP. Further, the transport unit 73 transports the substrate W from the exposure machine EXP to the second placement units 56a to 56c of the first to third stories 33a to 33c.

  The processing units 41 of the first to third layers 33a to 33c respectively perform a third process (more specifically, a process including an alkali developing process) on the substrate W.

  The second transport mechanism 27 performs a collecting operation. Specifically, the second transport mechanism 27 transports the substrate W from the first mounting portions 51a to 51c on the first to third stories 33a to 33c to the carrier C mounted on the carrier mounting portion 22B.

  FIG. 21B shows a second operation example. FIG. 21B schematically shows the transfer route of the substrate W by a dashed line. In the second operation example, the first transport mechanism 26 performs a supply operation. The second transport mechanism 27 performs a collecting operation. However, in the second operation example, the transport unit 25 does not perform the interlayer transport operation. Thus, the first processing and the third processing are performed on the substrate W in this order. However, the second processing is not performed on the substrate W. The development processing in the fourth to fifth layers 33d to 33e is not performed on the substrate W. Hereinafter, the second operation example will be specifically described.

  The first transport mechanism 26 performs a supply operation. Specifically, the first transport mechanism 26 transports the substrate W from the carrier C mounted on the carrier mounting unit 22A to the first mounting units 51f to 51h on the sixth to eighth layers 33f to 33h.

  The processing units 41 of the sixth to eighth layers 33f to 33h respectively perform the first processing on the substrate W.

  The transfer unit 73 of the interface unit 71 transfers the substrate W from the second placement units 56f to 56h on the sixth to eighth layers 33f to 33h to the exposure machine EXP. Further, the transport unit 73 transports the substrate W from the exposure machine EXP to the second placement units 56a to 56c of the first to third stories 33a to 33c.

  The processing units 41 of the first to third layers 33a to 33c respectively perform the third processing on the substrate W.

  The second transport mechanism 27 performs a collecting operation. Specifically, the second transport mechanism 27 transports the substrate W from the first mounting portions 51a to 51c on the first to third stories 33a to 33c to the carrier C mounted on the carrier mounting portion 22B.

  FIG. 21C shows a third operation example. FIG. 21C schematically shows the transfer route of the substrate W by a dashed line. In the third operation example, the first transport mechanism 26 performs a supply operation. The second transport mechanism 27 performs a collecting operation. However, in the third operation example, the transport unit 25 does not perform the interlayer transport operation. Thus, the first processing is performed on the substrate W. After that, the development processing in the fourth to fifth layers 33d to 33e is performed on the substrate W. However, the second processing and the third processing are not performed on the substrate W. Hereinafter, the third operation example will be specifically described.

  The first transport mechanism 26 performs a supply operation. Specifically, the first transport mechanism 26 transports the substrate W from the carrier C mounted on the carrier mounting unit 22A to the first mounting units 51f to 51h on the sixth to eighth layers 33f to 33h.

  The processing units 41 of the sixth to eighth layers 33f to 33h respectively perform the first processing on the substrate W.

  The transfer unit 73 of the interface unit 71 transfers the substrate W from the second placement units 56f to 56h on the sixth to eighth layers 33f to 33h to the exposure machine EXP. Further, the transport unit 73 transports the substrate W from the exposure machine EXP to the second placement units 56d to 56e of the fourth to fifth layers 33d to 33e.

  The processing units 41 of the fourth to fifth layers 33d to 33e respectively perform a development process (more specifically, an organic development process) on the substrate W. However, the processing units 41 of the fourth to fifth layers 33d to 33e do not perform the second processing on the substrate W.

  The second transport mechanism 27 performs a collecting operation. More specifically, the second transport mechanism 27 transports the substrate W from the first receivers 51d to 51e on the fourth to fifth layers 33d to 33e to the carrier C mounted on the carrier receiver 22B.

  FIG. 22A shows a fourth operation example. FIG. 22A schematically shows the transfer route of the first substrate W by a dashed line, and schematically shows the transfer route of the second substrate W by a broken line. The fourth operation example corresponds to a combination of the first operation example and the second operation example. In the fourth operation example, the first transport mechanism 26 performs a supply operation and an interlayer transport operation. The second transport mechanism 27 performs a collecting operation. Thus, the first processing, the second processing, and the third processing are performed on the first substrate W in this order, and the first processing and the third processing are performed on the second substrate W in this order. However, the development processing in the fourth to fifth layers 33d to 33e is not performed on the first substrate W. The second processing is not performed on the second substrate W. The development processing in the fourth to fifth layers 33d to 33e is not performed on the second substrate W. Hereinafter, the fourth operation example will be specifically described.

  The first transport mechanism 26 performs a supply operation. Specifically, the first transport mechanism 26 transports the first substrate W from the carrier C mounted on the carrier mounting portion 22A to the first mounting portions 51g to 51h on the seventh to eighth layers 33g to 33h. I do. The first transport mechanism 26 transports the second substrate W from the carrier C mounted on the carrier mounting portion 22A to the first mounting portion 51f on the sixth floor 33f.

  The processing units 41 in the seventh to eighth layers 33g to 33h respectively perform the first processing on the first substrate W. The processing unit 41 of the sixth hierarchy 33f performs the first processing on the second substrate W.

  The first transport mechanism 26 performs an interlayer transport operation. Specifically, the first transport mechanism 26 moves from the first placement units 51g-51h on the seventh-eighth layers 33g-33h to the first placement units 51d-51e on the fourth-fifth layers 33d-33e. Is transported to the first substrate W.

  The processing units 41 of the fourth to fifth layers 33d to 33e respectively perform the second processing on the first substrate W.

  The transport unit 73 of the interface unit 71 transports the first substrate W from the second placement units 56d to 56e of the fourth to fifth layers 33d to 33e to the exposure machine EXP. The transport unit 73 transports the second substrate W from the second placement unit 56f on the sixth floor 33f to the exposing machine EXP. Further, the transport unit 73 transports the first substrate W from the exposure machine EXP to the second placement units 56b to 56c of the second to third layers 33b to 33c. The transport unit 73 transports the second substrate W from the exposure machine EXP to the second placement unit 56a on the first floor 33a.

  The processing units 41 in the second to third layers 33b to 33c respectively perform the third processing on the first substrate W. The processing unit 41 of the first hierarchy 33a performs the third processing on the second substrate W.

  The second transport mechanism 27 performs a collecting operation. Specifically, the second transport mechanism 27 transports the first substrate W from the first receiver 51b-51c on the second-third level 33b-33c to the carrier C mounted on the carrier receiver 22B. I do. The second transport mechanism 27 transports the second substrate W from the first receiver 51a on the first floor 33a to the carrier C mounted on the carrier receiver 22B.

  FIG. 22B shows a fifth operation example. FIG. 22B schematically shows the transfer route of the first substrate W by a dashed line, and schematically shows the transfer route of the second substrate W by a broken line. The fifth operation example corresponds to a combination of the first operation example and the third operation example. In the fifth operation example, the first transport mechanism 26 performs a supply operation and an interlayer transport operation. The second transport mechanism 27 performs a collecting operation. Thus, the first processing, the second processing, and the third processing are performed on the first substrate W in this order, and the first processing and the development processing on the fourth to fifth layers 33d to 33e are performed in this order on the second substrate W. To do. However, the development processing in the fourth to fifth layers 33d to 33e is not performed on the first substrate W. The second processing and the third processing are not performed on the second substrate W. Hereinafter, the fifth operation example will be specifically described.

  The first transport mechanism 26 performs a supply operation. Specifically, the first transport mechanism 26 transports the first substrate W from the carrier C mounted on the carrier mounting portion 22A to the first mounting portions 51g to 51h on the seventh to eighth layers 33g to 33h. I do. The first transport mechanism 26 transports the second substrate W from the carrier C mounted on the carrier mounting portion 22A to the first mounting portion 51f on the sixth floor 33f.

  The processing units 41 in the seventh to eighth layers 33g to 33h respectively perform the first processing on the first substrate W. The processing unit 41 of the sixth hierarchy 33f performs the first processing on the second substrate W.

  The first transport mechanism 26 performs an interlayer transport operation. Specifically, the first transport mechanism 26 transports the first substrate W from the first receivers 51g-51h on the seventh-eighth layers 33g-33h to the first receiver 51e on the fifth floor 33e. I do.

  The processing unit 41 of the fifth hierarchy 33e performs the second processing on the first substrate W.

  The transport unit 73 of the interface unit 71 transports the first substrate W from the second placement unit 56e of the fifth floor 33e to the exposure machine EXP. The transport unit 73 transports the second substrate W from the second placement unit 56f on the sixth floor 33f to the exposing machine EXP. Further, the transport unit 73 transports the first substrate W from the exposure machine EXP to the second placement units 56b to 56c of the second to third layers 33b to 33c. The transport unit 73 transports the second substrate W from the exposure machine EXP to the second placement unit 56d on the fourth floor 33d.

  The processing units 41 of the second to third layers 33b to 33c respectively perform the third processing (more specifically, the alkali development processing) on the first substrate W. The processing unit 41 of the fourth hierarchy 33d performs a developing process (more specifically, an organic developing process) on the second substrate W.

  The second transport mechanism 27 performs a collecting operation. Specifically, the second transport mechanism 27 transports the first substrate W from the first receiver 51b-51c on the second-third level 33b-33c to the carrier C mounted on the carrier receiver 22B. I do. The second transport mechanism 27 transports the second substrate W from the first receiver 51d on the fourth floor 33d to the carrier C mounted on the carrier receiver 22B.

  FIG. 22C shows a sixth operation example. FIG. 22C schematically shows the transfer route of the first substrate W by a dashed line, the transfer route of the second substrate W by a broken line, and the transfer route of the third substrate W by a two-dot chain line. Shown schematically. The sixth operation example corresponds to a combination of the first operation example, the second operation example, and the third operation example. In the sixth operation example, the first transport mechanism 26 performs a supply operation and an interlayer transport operation. The second transport mechanism 27 performs a collecting operation. Thus, the first processing, the second processing, and the third processing are performed on the first substrate W in this order, the first processing and the third processing are performed on the second substrate W in this order, and the first processing and the fourth processing are performed. -The developing process in the fifth layer 33d-33e is performed on the third substrate W in this order. However, the development processing in the fourth to fifth layers 33d to 33e is not performed on the first substrate W. The second processing and the developing processing in the fourth to fifth layers 33d to 33e are not performed on the second substrate W. The second processing and the third processing are not performed on the third substrate W. Hereinafter, the sixth operation example will be specifically described.

  The first transport mechanism 26 performs a supply operation. Specifically, the first transport mechanism 26 transports the first substrate W from the carrier C mounted on the carrier mounting portion 22A to the first mounting portion 51h on the eighth floor 33h. The first transport mechanism 26 transports the second substrate W from the carrier C mounted on the carrier mounting portion 22A to the first mounting portion 51g on the seventh level 33g. The first transport mechanism 26 transports the third substrate W from the carrier C mounted on the carrier mounting portion 22A to the first mounting portion 51f on the sixth floor 33f.

  The processing unit 41 in the eighth hierarchy 33h performs the first processing on the first substrate W. The processing unit 41 of the seventh hierarchy 33g performs the first processing on the second substrate W. The processing unit 41 of the sixth layer 33f performs the first processing on the third substrate W.

  The first transport mechanism 26 performs an interlayer transport operation. Specifically, the first transport mechanism 26 transports the first substrate W from the first placement unit 51h on the eighth floor 33h to the first placement unit 51e on the fifth floor 33e.

  The processing unit 41 of the fifth hierarchy 33e performs the second processing on the first substrate W.

  The transport unit 73 of the interface unit 71 transports the first substrate W from the second placement unit 56e of the fifth floor 33e to the exposure machine EXP. The transport unit 73 transports the second substrate W from the second placement unit 56g on the seventh level 33g to the exposing machine EXP. The transport unit 73 transports the third substrate W from the second placement unit 56f on the sixth floor 33f to the exposing machine EXP. Further, the transport unit 73 transports the first substrate W from the exposure machine EXP to the second placement unit 56c on the third level 33c. The transport unit 73 transports the second substrate W from the exposure machine EXP to the second placement unit 56b on the second floor 33b. The transport unit 73 transports the third substrate W from the exposure machine EXP to the second placement unit 56d on the fourth floor 33d.

  The processing unit 41 in the third hierarchy 33c performs a third process (more specifically, an alkali developing process) on the first substrate W. The processing unit 41 of the second hierarchy 33b performs the third processing on the second substrate W. The processing unit 41 of the fourth hierarchy 33d performs a developing process (more specifically, an organic developing process) on the third substrate W.

  The second transport mechanism 27 performs a collecting operation. Specifically, the second transport mechanism 27 transports the first substrate W from the first mounting portion 51c on the third story 33c to the carrier C mounted on the carrier mounting portion 22B. The second transport mechanism 27 transports the second substrate W from the first receiver 51b on the second floor 33b to the carrier C mounted on the carrier receiver 22B. The second transport mechanism 27 transports the third substrate W from the first mounting portion 51d on the fourth story 33d to the carrier C mounted on the carrier mounting portion 22B.

  Although not shown, the substrate processing apparatus 1 according to the first modified embodiment can perform operations other than the first to sixth operation examples.

  For example, the substrate processing apparatus 1 according to the first modified embodiment can perform a seventh operation example corresponding to a combination of the second operation example and the third operation example. In the seventh operation example, the first transport mechanism 26 performs a supply operation. The second transport mechanism 27 performs a collecting operation. However, in the seventh operation example, the transport unit 25 does not perform the interlayer transport operation. Thus, the first processing and the third processing are performed on the first substrate W, and the first processing and the development processing on the fourth to fifth layers 33d to 33e are performed on the second substrate W.

  As described above, also according to the first modified embodiment, the footprint of the substrate processing apparatus 1 can be reduced, and the throughput of the substrate processing apparatus 1 can be improved.

<Second Modified Embodiment>
FIG. 23 is a left side view showing the configuration of the left part of the substrate processing apparatus 1 according to the second modified embodiment. The substrate processing apparatus 1 according to the second modified embodiment has more layers where the first processing is performed than the second embodiment. The substrate processing apparatus 1 according to the second modified embodiment has more layers in which the third processing is performed than the second embodiment. The second process of the second modified embodiment includes a cleaning process.

  Specifically, the processing units 41 of the sixth to eighth layers 33f to 33h perform the same processing on the substrate W. The processing units 41 of the sixth to eighth layers 33f to 33h respectively perform the first processing on the substrate W. The first process includes a resist film forming process. The first process may further include an anti-reflection film forming process, or may not include an anti-reflection film forming process. Each of the processing units 41 in the sixth to eighth layers 33f to 33h includes two antireflection film application units BARC and two resist film application cloth units RESIST.

  The processing units 41 of the fourth to fifth layers 33d to 33e perform the same processing on the substrate W. The processing units 41 of the fourth to fifth layers 33d to 33e respectively perform the second processing and the developing processing on the substrate W. The second process includes a cleaning process. In the cleaning process, the substrate W is cleaned by supplying a cleaning liquid to the substrate W. The development processing in the fourth to fifth layers 33d to 33e is, specifically, an organic development processing. Each of the processing units 41 of the fourth to fifth layers 33d to 33e includes two cleaning processing units SS and two organic developing units SD2.

  Here, the cleaning process may be any one of the first cleaning process and the second cleaning process. The first cleaning process cleans the surface of the substrate W. In the second cleaning process, at least one of the back surface of the substrate W and the peripheral edge of the substrate W is cleaned.

  In the cleaning process, the substrate W may be cleaned while rotating the substrate W, or the substrate W may be cleaned without rotating the substrate W. In the cleaning process, the substrate W may be cleaned using a brush, or the substrate W may be cleaned without using a brush. In the cleaning process, for example, the substrate W may be cleaned by bringing a brush into contact with the substrate W. In the cleaning process, the substrate W may be dried after cleaning the substrate W.

  The cleaning processing unit SS may be any one of a first cleaning processing unit that performs the first cleaning processing and a second cleaning processing unit that performs the second cleaning processing.

  The processing units 41 in the first to third layers 33a to 33c perform the same processing on the substrate W. The processing units 41 of the first to third layers 33a to 33c respectively perform the third processing on the substrate W. The third processing includes a development processing. The development processing included in the third processing is, specifically, an alkali development processing. Each of the processing units 41 in the first to third layers 33a to 33c includes four alkaline developing units SD1.

  The first processing is different from the second processing. The first processing is different from the third processing. The second processing is different from the third processing. The first process does not include a cleaning process and a developing process. The second process does not include the anti-reflection film forming process, the resist film forming process, and the developing process. The third process does not include the anti-reflection film forming process, the resist film forming process, and the cleaning process.

  The anti-reflection film forming process and the resist film forming process are examples of the first liquid process in the present invention. The anti-reflection film forming process and the resist film forming process are examples of the first pre-exposure process in the present invention. The cleaning processing is an example of the second liquid processing in the present invention. The cleaning process is an example of the second pre-exposure process in the present invention.

  The sixth to eighth layers 33f to 33h are examples of the “layer where the first processing is performed” in the present invention. The fourth to fifth layers 33d to 33e are examples of the “layer in which the second processing is performed” in the present invention. The first to third layers 33a to 33c are examples of the “layer in which the third processing is performed” in the present invention.

  FIGS. 24A to 24C are diagrams schematically illustrating the outline of the transport route of the substrate W. An operation example of the substrate processing apparatus 1 according to the second modified embodiment will be described below.

  FIG. 24A shows a first operation example. FIG. 24A schematically shows the transfer route of the substrate W by a dashed line. In the first operation example, the first transport mechanism 26 performs a supply operation and an interlayer transport operation. The second transport mechanism 27 performs a collecting operation. Thus, the first processing, the second processing, and the third processing are performed on the substrate W in this order. However, the development processing in the fourth to fifth layers 33d to 33e is not performed on the substrate W. Hereinafter, the first operation example will be specifically described.

  The first transport mechanism 26 performs a supply operation. Specifically, the first transport mechanism 26 transports the substrate W from the carrier C mounted on the carrier mounting unit 22A to the first mounting units 51f to 51h on the sixth to eighth layers 33f to 33h.

  The processing units 41 of the sixth to eighth layers 33f to 33h respectively perform the first processing (more specifically, the processing including the resist film forming processing) on the substrate W.

  The first transport mechanism 26 performs an interlayer transport operation. Specifically, the first transport mechanism 26 moves from the first mounting portion 51f-51h on the sixth-eighth level 33f-33h to the first mounting portion 51d-51e on the fourth-fifth level 33d-33e. The substrate W is transported.

  The processing units 41 in the fourth to fifth layers 33d to 33e respectively perform the second processing (more specifically, the processing including the cleaning processing) on the substrate W.

  The transfer unit 73 of the interface unit 71 transfers the substrate W from the second placement units 56d to 56e of the fourth to fifth layers 33d to 33e to the exposure machine EXP. Further, the transport unit 73 transports the substrate W from the exposure machine EXP to the second placement units 56a to 56c of the first to third stories 33a to 33c.

  The processing units 41 of the first to third layers 33a to 33c respectively perform the third processing (more specifically, the processing including the alkali development processing) on the substrate W.

  The second transport mechanism 27 performs a collecting operation. Specifically, the second transport mechanism 27 transports the substrate W from the first mounting portions 51a to 51c on the first to third stories 33a to 33c to the carrier C mounted on the carrier mounting portion 22B.

  FIG. 24B shows a second operation example. FIG. 24B schematically shows the transfer route of the substrate W by a dashed line. In the second operation example, the first transport mechanism 26 performs a supply operation. The second transport mechanism 27 performs a collecting operation. However, in the second operation example, the transport unit 25 does not perform the interlayer transport operation. Thus, the first processing and the third processing are performed on the substrate W in this order. However, the second processing is not performed on the substrate W. The development processing in the fourth to fifth layers 33d to 33e is not performed on the substrate W. Hereinafter, the second operation example will be specifically described.

  The first transport mechanism 26 performs a supply operation. Specifically, the first transport mechanism 26 transports the substrate W from the carrier C mounted on the carrier mounting unit 22A to the first mounting units 51f to 51h on the sixth to eighth layers 33f to 33h.

  The processing units 41 of the sixth to eighth layers 33f to 33h respectively perform the first processing on the substrate W.

  The transfer unit 73 of the interface unit 71 transfers the substrate W from the second placement units 56f to 56h on the sixth to eighth layers 33f to 33h to the exposure machine EXP. Further, the transport unit 73 transports the substrate W from the exposure machine EXP to the second placement units 56a to 56c of the first to third stories 33a to 33c.

  The processing units 41 of the first to third layers 33a to 33c respectively perform the third processing on the substrate W.

  The second transport mechanism 27 performs a collecting operation. Specifically, the second transport mechanism 27 transports the substrate W from the first mounting portions 51a to 51c on the first to third stories 33a to 33c to the carrier C mounted on the carrier mounting portion 22B.

  FIG. 24C shows a third operation example. FIG. 24C schematically shows the transfer route of the substrate W by a dashed line. In the third operation example, the first transport mechanism 26 performs a supply operation. The second transport mechanism 27 performs a collecting operation. However, in the third operation example, the transport unit 25 does not perform the interlayer transport operation. Thus, the first processing is performed on the substrate W. After that, the development processing in the fourth to fifth layers 33d to 33e is performed on the substrate W. However, the second processing and the third processing are not performed on the substrate W. Hereinafter, the third operation example will be specifically described.

  The first transport mechanism 26 performs a supply operation. Specifically, the first transport mechanism 26 transports the substrate W from the carrier C mounted on the carrier mounting unit 22A to the first mounting units 51f to 51h on the sixth to eighth layers 33f to 33h.

  The processing units 41 of the sixth to eighth layers 33f to 33h respectively perform the first processing on the substrate W.

  The transfer unit 73 of the interface unit 71 transfers the substrate W from the second placement units 56f to 56h on the sixth to eighth layers 33f to 33h to the exposure machine EXP. Further, the transport unit 73 transports the substrate W from the exposure machine EXP to the second placement units 56d to 56e of the fourth to fifth layers 33d to 33e.

  The processing units 41 of the fourth to fifth layers 33d to 33e respectively perform a development process (more specifically, an organic development process) on the substrate W.

  The second transport mechanism 27 performs a collecting operation. More specifically, the second transport mechanism 27 transports the substrate W from the first receivers 51d to 51e on the fourth to fifth layers 33d to 33e to the carrier C mounted on the carrier receiver 22B.

  Although not shown, the substrate processing apparatus 1 according to the second modified embodiment can perform operations other than the first to third operation examples.

  For example, the substrate processing apparatus 1 according to the second modified embodiment can perform a fourth operation example corresponding to a combination of the first operation example and the second operation example. In the fourth operation example, for example, the first processing, the second processing, and the third processing are performed on the first substrate W in this order, and the first processing and the third processing are performed on the second substrate W in this order.

  For example, the substrate processing apparatus 1 according to the second modified embodiment can perform a fifth operation example corresponding to a combination of the first operation example and the third operation example. In the fifth operation example, for example, the first processing, the second processing, and the third processing are performed on the first substrate W in this order, and the first processing and the development processing on the fourth to fifth layers 33d to 33e are performed in this order. For the second substrate W.

  For example, the substrate processing apparatus 1 according to the second modified embodiment can perform a sixth operation example corresponding to a combination of the first operation example, the second operation example, and the third operation example. In the sixth operation example, for example, the first processing, the second processing, and the third processing are performed on the first substrate W in this order, and the first processing and the third processing are performed on the second substrate W in this order. The processing and the development processing in the fourth to fifth layers 33d to 33e are performed on the third substrate W in this order.

  For example, the substrate processing apparatus 1 according to the second modified embodiment can perform a seventh operation example corresponding to a combination of the second operation example and the third operation example. In the seventh operation example, for example, the first processing and the third processing are performed on the first substrate W in this order, and the first processing and the developing processing on the fourth to fifth layers 33d to 33e are performed on the second substrate W in this order. Perform on W.

  In the fourth to sixth operation examples, the first transport mechanism 26 performs, for example, a supply operation and an interlayer transport operation. In the interlayer transport operation, the first transport mechanism 26 transfers the first substrate W from one or two of the stories 33f to 33h that perform the first process to one or two of the stories 33d to 33e that perform the second process. Is transported. The second transport mechanism 27 performs, for example, a collection operation.

  In the seventh operation example, the first transport mechanism 26 performs, for example, a supply operation. The second transport mechanism 27 performs, for example, a collection operation. However, in the seventh operation example, the transport unit 25 does not perform the interlayer transport operation.

  As described above, also according to the second modified embodiment, the footprint of the substrate processing apparatus 1 can be reduced, and the throughput of the substrate processing apparatus 1 can be improved.

<Third Modified Embodiment>
FIG. 25 is a left side view showing the configuration of the left part of the substrate processing apparatus 1 according to the third modified embodiment. The substrate processing apparatus 1 according to the third modified embodiment has more layers in which the first processing is performed than the second embodiment. The substrate processing apparatus 1 according to the third modified embodiment has more layers in which the third processing is performed than the second embodiment. The second process of the second modified embodiment includes a cleaning process. In the second modified embodiment, the processing unit 41 of the layer 33 where the second processing is performed does not perform the development processing.

  Specifically, the processing units 41 of the sixth to eighth layers 33f to 33h perform the same processing on the substrate W. The processing units 41 of the sixth to eighth layers 33f to 33h respectively perform the first processing on the substrate W. The first process includes a resist film forming process. The first process may or may not further include an anti-reflection film forming process. Each of the processing units 41 in the sixth to eighth layers 33f to 33h includes two antireflection film application units BARC and two resist film application cloth units RESIST.

  The processing units 41 of the fourth to fifth layers 33d to 33e perform the same processing on the substrate W. The processing units 41 of the fourth to fifth layers 33d to 33e respectively perform the second processing on the substrate W. The second process includes a cleaning process. The cleaning process specifically includes at least one of the first cleaning process and the second cleaning process. In both the first cleaning process and the second cleaning process, the substrate W is cleaned by supplying a cleaning liquid to the substrate W. The first cleaning process cleans the surface of the substrate W. In the second cleaning process, at least one of the back surface of the substrate W and the peripheral edge of the substrate W is cleaned. In at least one of the first cleaning process and the second cleaning process, the substrate W may be cleaned while rotating the substrate W, or the substrate W may be cleaned without rotating the substrate W. In at least one of the first cleaning process and the second cleaning process, the substrate W may be cleaned using a brush, or the substrate W may be cleaned without using a brush. In at least one of the first cleaning process and the second cleaning process, the substrate W may be cleaned by, for example, bringing a brush into contact with the substrate W. In at least one of the first cleaning process and the second cleaning process, the substrate W may be dried after cleaning the substrate W. Each of the processing units 41 of the fourth to fifth layers 33d to 33e includes two first cleaning processing units SSA for performing the first cleaning processing and two second cleaning processing units SSB for performing the second cleaning processing.

  The processing units 41 in the first to third layers 33a to 33c perform the same processing on the substrate W. The processing units 41 of the first to third layers 33a to 33c respectively perform the third processing on the substrate W. The third processing includes a development processing. The development process included in the third process is, for example, an alkali development process. Alternatively, the developing process included in the third process may be an organic developing process. Each of the processing units 41 of the first to third layers 33a to 33c includes four developing units SD.

  The first processing is different from the second processing. The first processing is different from the third processing. The second processing is different from the third processing. The first process does not include a cleaning process and a developing process. The second process does not include the anti-reflection film forming process, the resist film forming process, and the developing process. The third process does not include the anti-reflection film forming process, the resist film forming process, and the cleaning process.

  The anti-reflection film forming process and the resist film forming process are examples of the first liquid process in the present invention. The anti-reflection film forming process and the resist film forming process are examples of the first pre-exposure process in the present invention. The cleaning processing is an example of the second liquid processing in the present invention. The cleaning process is an example of the second pre-exposure process in the present invention.

  The sixth to eighth layers 33f to 33h are examples of the “layer where the first processing is performed” in the present invention. The fourth to fifth layers 33d to 33e are examples of the “layer in which the second processing is performed” in the present invention. The first to third layers 33a to 33c are examples of the “layer in which the third processing is performed” in the present invention.

  FIGS. 26A to 26C are diagrams schematically illustrating the outline of the transport route of the substrate W. An operation example of the substrate processing apparatus 1 according to the third modified embodiment will be exemplified below.

  FIG. 26A shows a first operation example. FIG. 26A schematically shows the transfer route of the substrate W by a dashed line. In the first operation example, the first transport mechanism 26 performs a supply operation and an interlayer transport operation. The second transport mechanism 27 performs a collecting operation. Thus, the first processing, the second processing, and the third processing are performed on the substrate W in this order. Hereinafter, the first operation example will be specifically described.

  The first transport mechanism 26 performs a supply operation. Specifically, the first transport mechanism 26 transports the substrate W from the carrier C mounted on the carrier mounting unit 22A to the first mounting units 51f to 51h on the sixth to eighth layers 33f to 33h.

  The processing units 41 in the sixth to eighth layers 33f to 33h respectively perform the first processing (more specifically, the processing including the resist film forming processing) on the substrate W.

  The first transport mechanism 26 performs an interlayer transport operation. Specifically, the first transport mechanism 26 moves from the first mounting portion 51f-51h on the sixth-eighth level 33f-33h to the first mounting portion 51d-51e on the fourth-fifth level 33d-33e. The substrate W is transported.

  The processing units 41 of the fourth to fifth layers 33d to 33e respectively perform the second processing (more specifically, the processing including the cleaning processing) on the substrate W.

  Here, the processing units 41 of the fourth to fifth layers 33d to 33e respectively perform at least one of the first cleaning process and the second cleaning process on the substrate W. For example, the processing units 41 of the fourth to fifth layers 33d to 33e may perform only the first cleaning process on the substrate W and do not need to perform the second cleaning process on the substrate W. For example, the processing units 41 in the fourth to fifth layers 33d to 33e may perform only the second cleaning process on the substrate W and do not need to perform the first cleaning process on the substrate W. For example, the processing units 41 of the fourth to fifth layers 33d to 33e may perform the processing on the substrate W for both the first cleaning processing and the second cleaning processing, respectively. In this case, the processing units 41 of the fourth to fifth layers 33d to 33e may perform the first cleaning process and the second cleaning process on the substrate W in this order. Alternatively, the processing units 41 of the fourth to fifth layers 33d to 33e may perform the second cleaning process and the first cleaning process on the substrate W in this order.

  The transfer unit 73 of the interface unit 71 transfers the substrate W from the second placement units 56d to 56e of the fourth to fifth layers 33d to 33e to the exposure machine EXP. Further, the transport unit 73 transports the substrate W from the exposure machine EXP to the second placement units 56a to 56c of the first to third stories 33a to 33c.

  The processing units 41 of the first to third layers 33a to 33c respectively perform the third processing (more specifically, the processing including the development processing) on the substrate W.

  The second transport mechanism 27 performs a collecting operation. Specifically, the second transport mechanism 27 transports the substrate W from the first mounting portions 51a to 51c on the first to third stories 33a to 33c to the carrier C mounted on the carrier mounting portion 22B.

  FIG. 26B shows a second operation example. FIG. 26B schematically shows the transfer route of the substrate W by a dashed line. In the second operation example, the first transport mechanism 26 performs a supply operation. The second transport mechanism 27 performs a collecting operation. However, in the second operation example, the transport unit 25 does not perform the interlayer transport operation. Thus, the first processing and the third processing are performed on the substrate W in this order. However, the second processing is not performed on the substrate W. Hereinafter, the second operation example will be specifically described.

  The first transport mechanism 26 performs a supply operation. Specifically, the first transport mechanism 26 transports the substrate W from the carrier C mounted on the carrier mounting unit 22A to the first mounting units 51f to 51h on the sixth to eighth layers 33f to 33h.

  The processing units 41 of the sixth to eighth layers 33f to 33h respectively perform the first processing on the substrate W.

  The transfer unit 73 of the interface unit 71 transfers the substrate W from the second placement units 56f to 56h on the sixth to eighth layers 33f to 33h to the exposure machine EXP. Further, the transport unit 73 transports the substrate W from the exposure machine EXP to the second placement units 56a to 56c of the first to third stories 33a to 33c.

  The processing units 41 of the first to third layers 33a to 33c respectively perform the third processing on the substrate W.

  The second transport mechanism 27 performs a collecting operation. Specifically, the second transport mechanism 27 transports the substrate W from the first mounting portions 51a to 51c on the first to third stories 33a to 33c to the carrier C mounted on the carrier mounting portion 22B.

  FIG. 26C shows a third operation example. FIG. 26C schematically shows the transfer route of the first substrate W by a dashed line, and schematically shows the transfer route of the second substrate W by a broken line. The third operation example corresponds to a combination of the first operation example and the second operation example. In the third operation example, the first transport mechanism 26 performs a supply operation and an interlayer transport operation. The second transport mechanism 27 performs a collecting operation. Thus, the first processing, the second processing, and the third processing are performed on the first substrate W in this order, and the first processing and the third processing are performed on the second substrate W in this order. However, the second processing is not performed on the second substrate W. Hereinafter, the third operation example will be specifically described.

  The first transport mechanism 26 performs a supply operation. Specifically, the first transport mechanism 26 transports the first substrate W from the carrier C mounted on the carrier mounting portion 22A to the first mounting portions 51g to 51h on the seventh to eighth layers 33g to 33h. I do. The first transport mechanism 26 transports the second substrate W from the carrier C mounted on the carrier mounting portion 22A to the first mounting portion 51f on the sixth floor 33f.

  The processing units 41 in the seventh to eighth layers 33g to 33h respectively perform the first processing on the first substrate W. The processing unit 41 of the sixth hierarchy 33f performs the first processing on the second substrate W.

  The first transport mechanism 26 performs an interlayer transport operation. Specifically, the first transport mechanism 26 moves from the first placement units 51g-51h on the seventh-eighth layers 33g-33h to the first placement units 51d-51e on the fourth-fifth layers 33d-33e. Is transported to the first substrate W.

  The processing units 41 of the fourth to fifth layers 33d to 33e respectively perform the second processing on the first substrate W.

  The transport unit 73 of the interface unit 71 transports the first substrate W from the second placement units 56d to 56e of the fourth to fifth layers 33d to 33e to the exposure machine EXP. The transport unit 73 transports the second substrate W from the second placement unit 56f on the sixth floor 33f to the exposing machine EXP. Further, the transport unit 73 transports the first substrate W from the exposure machine EXP to the second placement units 56b to 56c of the second to third layers 33b to 33c. The transport unit 73 transports the second substrate W from the exposure machine EXP to the second placement unit 56a on the first floor 33a.

  The processing units 41 in the second to third layers 33b to 33c respectively perform the third processing on the first substrate W. The processing unit 41 of the first hierarchy 33a performs the third processing on the second substrate W.

  The second transport mechanism 27 performs a collecting operation. Specifically, the second transport mechanism 27 transports the first substrate W from the first receiver 51b-51c on the second-third level 33b-33c to the carrier C mounted on the carrier receiver 22B. I do. The second transport mechanism 27 transports the second substrate W from the first receiver 51a on the first floor 33a to the carrier C mounted on the carrier receiver 22B.

  As described above, also according to the third modified embodiment, the footprint of the substrate processing apparatus 1 can be reduced, and the throughput of the substrate processing apparatus 1 can be improved.

  The fourth to fifth layers 33d to 33e of the third modified embodiment may be further changed as follows. That is, the second process performed in the fourth to fifth layers 33d to 33e may include a protective film forming process in addition to the cleaning process. In this case, the protective film forming process and the cleaning process are examples of the second liquid process in the present invention. The protective film forming process and the cleaning process are examples of the second pre-exposure process in the present invention.

  For example, the second process may include a protective film forming process, a first cleaning process, and a second cleaning process. Each of the fourth to fifth layers 33d to 33e may include a first cleaning processing unit SSA, a second cleaning processing unit SSB, and a protective film forming processing unit TC.

  For example, the second process includes the protection film forming process and the first cleaning process, and may not include the second cleaning process. Each of the fourth to fifth layers 33d to 33e may include a first cleaning processing unit SSA and a protective film forming processing unit TC. Each of the fourth to fifth layers 33d to 33e may not include the second cleaning unit SSB.

  For example, the second process includes a protective film forming process and a second cleaning process, and may not include the first cleaning process. Each of the fourth to fifth layers 33d to 33e may include a second cleaning unit SSB and a protective film forming unit TC. Each of the fourth to fifth layers 33d to 33e may not include the first cleaning processing unit SSA.

<Fourth modified embodiment>
FIG. 27 is a left side view showing the configuration of the left part of the substrate processing apparatus 1 according to the fourth modified embodiment. The substrate processing apparatus 1 according to the fourth modified embodiment has more layers in which the first processing is performed than the second embodiment. The substrate processing apparatus 1 according to the fourth modified embodiment has more layers where the second processing is performed than the second embodiment. In the fourth modified embodiment, the processing unit 41 of the layer 33 where the second processing is performed can further perform two types of development processing. The substrate processing apparatus 1 according to the fourth modification does not include the floor 33 on which the third processing is performed.

  Specifically, the processing units 41 of the sixth to eighth layers 33f to 33h perform the same processing on the substrate W. The processing units 41 of the sixth to eighth layers 33f to 33h respectively perform the first processing on the substrate W. The first process includes a resist film forming process. The first process may further include an anti-reflection film forming process, or may not include an anti-reflection film forming process. Each of the processing units 41 in the sixth to eighth layers 33f to 33h includes two antireflection film application units BARC and two resist film application cloth units RESIST.

  The processing units 41 in the first to fifth layers 33a to 33e perform the same processing on the substrate W. The processing units 41 of the first to fifth layers 33a to 33e respectively perform the second processing and the developing processing on the substrate W. The second process includes a cleaning process. Specifically, in the development processing in the first to fifth layers 33a to 33e, one of the alkali development processing and the organic development processing is selectively performed. The processing units 41 of the first to fifth layers 33a to 33e each include one cleaning processing unit SS, two alkali developing units SD1, and one organic developing unit SD2.

  The first processing is different from the second processing. The first process does not include a cleaning process and a developing process. The second process does not include the anti-reflection film forming process, the resist film forming process, and the developing process.

  The anti-reflection film forming process and the resist film forming process are examples of the first liquid process in the present invention. The anti-reflection film forming process and the resist film forming process are examples of the first pre-exposure process in the present invention. The cleaning processing is an example of the second liquid processing in the present invention. The cleaning process is an example of the second pre-exposure process in the present invention.

  The sixth to eighth layers 33f to 33h are examples of the “layer where the first processing is performed” in the present invention. The first to fifth layers 33a to 33e are examples of the “layer in which the second processing is performed” in the present invention.

  FIGS. 28A to 28C are diagrams schematically illustrating the outline of the transport route of the substrate W. An operation example of the substrate processing apparatus 1 according to the fourth modified embodiment will be described below.

  FIG. 28A shows a first operation example. FIG. 28A schematically shows the transfer route of the substrate W by a chain line. In the first operation example, the first transport mechanism 26 performs a supply operation and an interlayer transport operation. The second transport mechanism 27 performs a collecting operation. Thus, the first processing and the second processing are performed on the substrate W in this order. After that, the development processing on the first to fifth layers 33a to 33e is performed on the substrate W. Hereinafter, the first operation example will be specifically described.

  The first transport mechanism 26 performs a supply operation. Specifically, the first transport mechanism 26 transports the substrate W from the carrier C mounted on the carrier mounting unit 22A to the first mounting units 51f to 51h on the sixth to eighth layers 33f to 33h.

  The processing units 41 in the sixth to eighth layers 33f to 33h respectively perform the first processing (more specifically, the processing including the resist film forming processing) on the substrate W.

  The first transport mechanism 26 performs an interlayer transport operation. Specifically, the first transport mechanism 26 moves from the first mounting portion 51f-51h on the sixth-eighth level 33f-33h to the first mounting portion 51d-51e on the fourth-fifth level 33d-33e. The substrate W is transported.

  The processing units 41 of the fourth to fifth layers 33d to 33e respectively perform the second processing (more specifically, the processing including the cleaning processing) on the substrate W.

  The transfer unit 73 of the interface unit 71 transfers the substrate W from the second placement units 56d to 56e of the fourth to fifth layers 33d to 33e to the exposure machine EXP. Further, the transport unit 73 transports the substrate W from the exposure machine EXP to the second placement units 56a to 56c of the first to third stories 33a to 33c.

  The processing units 41 of the first to third layers 33a to 33c respectively perform the development processing on the substrate W.

  More specifically, the processing units 41 of the first to third layers 33a to 33c respectively perform one of the alkali developing process and the organic developing process on the substrate W. For example, the alkali development processing may be performed on the substrate W in the first to third layers 33a to 33c. For example, the organic development processing may be performed on the substrate W in the first to third layers 33a to 33c. For example, in a part of the first to third layers 33a to 33c, an alkali developing process is performed on the substrate W, and in another part of the first to third layers 33a to 33c, an organic developing process is performed on the substrate W Is also good. In other operation examples described later, the development processing in the first to third layers 33a to 33c may be similarly performed.

  The second transport mechanism 27 performs a collecting operation. Specifically, the second transport mechanism 27 transports the substrate W from the first mounting portions 51a to 51c on the first to third stories 33a to 33c to the carrier C mounted on the carrier mounting portion 22B.

  FIG. 28B shows a second operation example. FIG. 28B schematically shows the transfer route of the substrate W by a dashed line. In the second operation example, the first transport mechanism 26 performs a supply operation. The second transport mechanism 27 performs a collecting operation. However, in the second operation example, the transport unit 25 does not perform the interlayer transport operation. Thus, the first processing is performed on the substrate W. After that, the development processing on the first to fifth layers 33a to 33e is performed on the substrate W. However, the second processing is not performed on the substrate W. Hereinafter, the second operation example will be specifically described.

  The first transport mechanism 26 performs a supply operation. Specifically, the first transport mechanism 26 transports the substrate W from the carrier C mounted on the carrier mounting unit 22A to the first mounting units 51f to 51h on the sixth to eighth layers 33f to 33h.

  The processing units 41 of the sixth to eighth layers 33f to 33h respectively perform the first processing on the substrate W.

  The transfer unit 73 of the interface unit 71 transfers the substrate W from the second placement units 56f to 56h on the sixth to eighth layers 33f to 33h to the exposure machine EXP. Further, the transport unit 73 transports the substrate W from the exposure machine EXP to the second placement units 56a to 56c of the first to third stories 33a to 33c.

  The processing units 41 of the first to third layers 33a to 33c respectively perform the development processing on the substrate W.

  The second transport mechanism 27 performs a collecting operation. Specifically, the second transport mechanism 27 transports the substrate W from the first mounting portions 51a to 51c on the first to third stories 33a to 33c to the carrier C mounted on the carrier mounting portion 22B.

  FIG. 28C shows a third operation example. FIG. 28C schematically shows the transfer route of the first substrate W by a dashed line, and schematically shows the transfer route of the second substrate W by a broken line. The third operation example corresponds to a combination of the first operation example and the second operation example. In the third operation example, the first transport mechanism 26 performs a supply operation and an interlayer transport operation. The second transport mechanism 27 performs a collecting operation. Thus, the first processing and the second processing are performed on the first substrate W in this order, and the first processing is performed on the second substrate W. After that, development processing in the first to third layers 33a to 33c is performed on the first substrate W and the second substrate W. However, the second processing is not performed on the second substrate W. Hereinafter, the third operation example will be specifically described.

  The first transport mechanism 26 performs a supply operation. Specifically, the first transport mechanism 26 transports the first substrate W from the carrier C mounted on the carrier mounting portion 22A to the first mounting portions 51g to 51h on the seventh to eighth layers 33g to 33h. I do. The first transport mechanism 26 transports the second substrate W from the carrier C mounted on the carrier mounting portion 22A to the first mounting portion 51f on the sixth floor 33f.

  The processing units 41 in the seventh to eighth layers 33g to 33h respectively perform the first processing on the first substrate W. The processing unit 41 of the sixth hierarchy 33f performs the first processing on the second substrate W.

  The first transport mechanism 26 performs an interlayer transport operation. Specifically, the first transport mechanism 26 moves from the first placement units 51g-51h on the seventh-eighth layers 33g-33h to the first placement units 51d-51e on the fourth-fifth layers 33d-33e. Is transported to the first substrate W.

  The processing units 41 of the fourth to fifth layers 33d to 33e respectively perform the second processing on the first substrate W.

  The transport unit 73 of the interface unit 71 transports the first substrate W from the second placement units 56d to 56e of the fourth to fifth layers 33d to 33e to the exposure machine EXP. The transport unit 73 transports the second substrate W from the second placement unit 56f on the sixth floor 33f to the exposing machine EXP. Further, the transport unit 73 transports the first substrate W from the exposure machine EXP to the second placement units 56b to 56c of the second to third layers 33b to 33c. The transport unit 73 transports the second substrate W from the exposure machine EXP to the second placement unit 56a on the first floor 33a.

  The processing units 41 in the second to third layers 33b to 33c each perform a development process on the first substrate W. The processing unit 41 of the first level 33a performs a developing process on the second substrate W.

  The second transport mechanism 27 performs a collecting operation. Specifically, the second transport mechanism 27 transports the first substrate W from the first receiver 51b-51c on the second-third level 33b-33c to the carrier C mounted on the carrier receiver 22B. I do. The second transport mechanism 27 transports the second substrate W from the first receiver 51a on the first floor 33a to the carrier C mounted on the carrier receiver 22B.

  As described above, also according to the fourth modified embodiment, the footprint of the substrate processing apparatus 1 can be reduced, and the throughput of the substrate processing apparatus 1 can be improved.

  The first to fifth layers 33a to 33e of the fourth embodiment may be further changed as follows.

  For example, the cleaning process included in the second process may be any one of the first cleaning process and the second cleaning process. Here, the first cleaning process cleans the surface of the substrate W. In the second cleaning process, at least one of the back surface of the substrate W and the peripheral edge of the substrate W is cleaned. Specifically, the cleaning unit SS may be any one of the first cleaning unit SSA and the second cleaning unit SSB. Each of the first to fifth layers 33a to 33e may include one first cleaning unit SSA, two alkali developing units SD1, and one organic developing unit SD2. Alternatively, each of the first to fifth layers 33a to 33e may include one second cleaning unit SSB, two alkali developing units SD1, and one organic developing unit SD2.

  For example, the cleaning process included in the second process may include both the first cleaning process and the second cleaning process. Specifically, each of the first to fifth layers 33a to 33e includes one first cleaning processing unit SSA, one second cleaning processing unit SSB, one alkali developing unit SD1, and one organic developing unit SD2. You may. In this case, the organic developing unit SD2 may be omitted. That is, each of the first to fifth layers 33a to 33e may include one first cleaning processing unit SSA, one second cleaning processing unit SSB, and two alkali developing units SD1. Alternatively, the alkali developing unit SD1 may be omitted. That is, each of the first to fifth layers 33a to 33e may include one first cleaning processing unit SSA, one second cleaning processing unit SSB, and two organic developing units SD2.

  For example, the second process may include a protective film forming process in addition to the cleaning process. Specifically, the second process may include a protective film forming process and a cleaning process. Each of the first to fifth layers 33a to 33e may include one cleaning processing unit SS, one protective film forming processing unit TC, one alkali developing unit SD1, and one organic developing unit SD2. In this case, the organic developing unit SD2 may be omitted. That is, each of the first to fifth layers 33a to 33e may include one cleaning processing unit SS, one protective film formation processing unit TC, and two alkali developing units SD1. Alternatively, the alkali developing unit SD1 may be omitted. That is, each of the first to fifth layers 33a to 33e may include one cleaning processing unit SS, one protective film forming processing unit TC, and two organic developing units SD2.

  For example, the development processing performed in the first to fifth layers 33a to 33e includes an alkali development processing and may not include an organic development processing. Specifically, each of the first to fifth layers 33a to 33e may include one cleaning processing unit SS and three alkali developing units SD1. Alternatively, each of the first to fifth layers 33a to 33e may include two cleaning processing units SS and two alkali developing units SD1.

  For example, the development processing performed in the first to fifth layers 33a to 33e includes an organic development processing and may not include an alkali development processing. Specifically, each of the first to fifth layers 33a to 33e may include one cleaning processing unit SS and three organic developing units SD2. Alternatively, each of the first to fifth layers 33a to 33e may include two cleaning processing units SS and two organic developing units SD2.

  In the fourth operation example of the above-described first modified embodiment, the supply operation unloads the first substrate W and the second substrate W from the carrier C mounted on the carrier mounting portion 22A. Here, in the supply operation, the first substrate W and the second substrate W may be carried out from different carriers C. For example, the first substrate W may be unloaded from the first carrier C, and the second substrate W may be unloaded from the second carrier C different from the first carrier C. Alternatively, in the supply operation, the first substrate W and the second substrate W may be unloaded from the same carrier C. In other operation examples of the first to fourth modified embodiments in which processing is performed on the first substrate W and the second substrate W, the supply operation may be similarly performed.

  In the fourth operation example of the above-described first modified embodiment, in the collecting operation, the first substrate W and the second substrate W are carried into the carrier C placed on the carrier placing portion 22A. Here, in the collecting operation, the first substrate W and the second substrate W may be carried into different carriers C. For example, the first substrate W may be loaded into the first carrier C, and the second substrate W may be loaded into a second carrier C different from the first carrier C. Alternatively, in the collecting operation, the first substrate W and the second substrate W may be carried into the same carrier C. In other operation examples of the first to fourth modified embodiments in which processing is performed on the first substrate W and the second substrate W, the collection operation may be similarly performed.

  In each of the operation examples of the first to fourth modified embodiments described above, after the second processing is performed on the substrate W, the third processing or the development processing in the layer 33 where the second processing is performed is performed on the substrate W. Was. However, it is not limited to this. For example, after performing the second process on the substrate W, the substrate W may be collected on the carrier C without further processing the substrate W. In each of the operation examples of the above-described first to fourth modified embodiments, after performing the second processing on the substrate W, the substrate W is transported to the exposure machine EXP. However, it is not limited to this. For example, after performing the second process on the substrate W, the substrate W may be collected on the carrier C without transporting the substrate W to the exposure machine EXP.

  In the above-described first and second embodiments, the first placement unit 51 is arranged to extend over the transport space 35 of the story 33 and the transport space 23 of the indexer unit 21. However, it is not limited to this. For example, the entire first placement unit 51 may be arranged in the transport space 35 of the story 33. For example, the entire first placement unit 51 may be arranged at a place other than the transport space 35 of the story 33.

  In the above-described first and second embodiments, the second placement unit 56 is installed across the transport space 35 of the story 33 and the interface unit 71. However, it is not limited to this. For example, the entire second placement section 56 may be arranged in the transport space 35 of the story 33. For example, the whole of the second mounting portion 56 may be arranged in a place other than the transport space 35 on the story 33.

  In the first and second embodiments described above, the substrate processing apparatus 1 includes the interface unit 71. However, it is not limited to this. The interface unit 71 may be omitted.

  In the second embodiment, the liquid processing unit 42 of the fifth to sixth layers 33e to 33f includes a coating unit BARC for antireflection film and a coating unit RESIST for resist film as a liquid processing unit 43. Here, the atmosphere may be shut off between the antireflection film coating unit BARC and the resist film coating unit RESIST. For example, the antireflection film coating unit BARC may be housed in a first chamber, and the resist film coating unit RESIST may be housed in a second chamber different from the first chamber.

  In the second embodiment, the liquid processing unit 42 of the third to fourth layers 33c to 33d includes a protective film coating unit TC and a negative tone developing unit NTD as a liquid processing unit 43. Therefore, the atmosphere may be shut off between the protective film coating unit TC and the negative tone developing unit NTD. For example, the protective film coating unit TC may be housed in a first chamber, and the negative tone developing unit NTD may be housed in a second chamber different from the first chamber.

  In the first and second embodiments described above, the processing block 31 has the partition wall 34. However, it is not limited to this. The partition 34 may be omitted. In other words, the transport spaces 35 of each story 33 may communicate with each other. According to the present modified embodiment, the maintenance of the processing block 31 and each hierarchy 33 can be easily performed.

  Regarding the above-described first and second embodiments and each modified embodiment, each configuration may be appropriately changed by replacing or combining each configuration with the configuration of another modified embodiment.

DESCRIPTION OF SYMBOLS 1 ... Substrate processing apparatus 11 ... Stocker part 13 ... Shelf 15 ... Carrier conveyance mechanism 21 ... Indexer part 22A, 22A1, 22A2, 22B, 22B1, 22B2 ... Carrier mounting part 25 ... Indexer part conveyance part 26 ... Indexer part 1 transport mechanism 27 ... second transport mechanism of indexer section 31 ... processing block 33 ... layer 35 ... transport space 36 ... main transport mechanism 41 ... processing section 42 ... liquid processing section 43 ... liquid processing unit 47 ... heat treatment section 48 ... heat treatment unit Reference numeral 51: first mounting portion 52: first feeding mounting portion 53: first return mounting portion 56: second mounting portion 57: second feeding mounting portion 58: second returning mounting portion 61: pump chamber 62: pump 71: interface unit 73: transport unit of interface unit 74: first transport of interface unit Mechanism 75: Second transport mechanism of interface section 76: Third transport mechanism of interface section 91: Cleaning section 101: Heat treatment section 107: Control section C: Carrier BARC: Coating unit for anti-reflection film RESIST: Coating unit for resist film SD … Developing unit TC… Protective film coating unit NTD… Negative tone developing unit PTD… Positive tone developing unit EXP… Exposure machine W… Substrate X… Back and forth direction Y… Width direction Z… Vertical direction

Claims (21)

A substrate processing apparatus,
Indexer part,
A plurality of hierarchies arranged vertically,
A control unit that controls the indexer unit and the hierarchy,
With
Each of said hierarchies:
A first mounting portion on which the substrate is mounted,
A processing unit for processing the substrate,
A main transfer mechanism that transfers the substrate to the first mounting unit and the processing unit;
With
The indexer unit includes:
A carrier mounting portion for mounting the carrier,
A transfer unit that transfers a substrate between the carrier mounted on the carrier mounting unit and the first mounting unit;
With
The transport unit of the indexer unit,
A supply operation of transporting a substrate from the carrier mounted on the carrier mounting portion to the first mounting portion, and a substrate mounted on the carrier mounted on the carrier mounting portion from the first mounting portion; A first transport mechanism that performs at least one of a collection operation for transporting
With
The substrate processing apparatus, wherein the first transport mechanism of the indexer unit further performs an interlayer transport operation of transporting a substrate between two first placement units provided on different hierarchies. The substrate processing apparatus according to claim 1,
The processing unit of one or more of the layers performs a first processing on the substrate,
The processing unit of one or more other layers performs a second process different from the first process on the substrate,
The first transport mechanism of the indexer unit includes a substrate between the first placement unit of the hierarchy where the first processing is performed and the first placement unit of the hierarchy where the second processing is performed. Substrate processing equipment that transports The substrate processing apparatus according to claim 2,
The first process includes a first pre-exposure process performed before the exposure process,
The substrate processing apparatus, wherein the second process includes a second pre-exposure process that is performed before the exposure process and is different from the first pre-exposure process. The substrate processing apparatus according to claim 2, wherein
The first processing includes a first liquid processing,
The substrate processing apparatus, wherein the second processing includes a second liquid processing different from the first liquid processing. The substrate processing apparatus according to any one of claims 2 to 4,
The first process includes an anti-reflection film forming process for forming an anti-reflection film on the substrate, a resist film forming process for forming a resist film on the substrate, a protective film forming process for forming a protective film for protecting the resist film on the substrate, Including a part of a development process of developing the substrate and a cleaning process of cleaning the substrate,
The second processing includes the antireflection film forming processing, the resist film forming processing, the protective film forming processing, the developing processing, and another part of the cleaning processing. The substrate processing apparatus according to any one of claims 2 to 4,
The first process includes a process of forming an antireflection film on a substrate,
The second process includes a process of forming a resist film on the substrate,
The first transfer mechanism of the indexer unit transfers a substrate from the first placement unit of the hierarchy where the first processing is performed to the first placement unit of the hierarchy where the second processing is performed. Substrate processing equipment. The substrate processing apparatus according to any one of claims 2 to 4,
The first process includes a process of forming an antireflection film on the substrate and a process of forming a resist film on the substrate,
The second process includes a process of forming a protective film on the substrate to protect the resist film,
The first transfer mechanism of the indexer unit transfers a substrate from the first placement unit of the hierarchy where the first processing is performed to the first placement unit of the hierarchy where the second processing is performed. Substrate processing equipment. The substrate processing apparatus according to claim 7,
The processing unit of the hierarchy where the second processing is performed further performs a processing of developing a substrate,
The substrate processing apparatus, wherein the transport unit of the indexer unit transports a substrate from the first placement unit of the hierarchy where the second processing is performed to the carrier placed on the carrier placement unit. The substrate processing apparatus according to any one of claims 2 to 8,
The substrate processing apparatus, wherein the transport unit of the indexer unit transports a substrate from the carrier mounted on the carrier mounting unit to the first mounting unit of the hierarchy where the first processing is performed. The substrate processing apparatus according to any one of claims 2 to 9,
The number of the layers on which the first processing is performed is two or more,
The number of the layers on which the second processing is performed is two or more. The substrate processing apparatus according to any one of claims 2 to 10,
The processing unit of one or more other layers different from the layer on which the first processing is performed and the layer on which the second processing is performed performs a third processing on a substrate,
The third process includes a process of developing the substrate,
The substrate processing apparatus, wherein the transport unit of the indexer unit transports a substrate from the first placement unit of the hierarchy where the third processing is performed to the carrier placed on the carrier placement unit. The substrate processing apparatus according to claim 11,
The number of the layers on which the third processing is performed is two or more. The substrate processing apparatus according to claim 1, wherein
Each of said hierarchies:
A second mounting portion on which the substrate is mounted,
With
The substrate processing apparatus includes:
An interface section,
With
The interface unit includes:
The second mounting unit, a transport unit that transports the substrate between the substrate processing apparatus and a separate exposure machine,
With
The substrate processing apparatus, wherein the transfer unit of the interface unit does not transfer the substrate between the two second placement units provided on different layers. The substrate processing apparatus according to any one of claims 1 to 13,
The first mounting portion includes:
A first feed receiver on which the transfer unit of the indexer unit mounts a substrate;
A first return placement section on which the main transfer mechanism places a substrate exclusively;
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 14,
The transport unit of the indexer unit, two substrates are simultaneously placed on the first feed mounting unit,
The substrate processing apparatus, wherein the first feed mounting unit is configured so that at least four or more substrates can be mounted on the first feed mounting unit. The substrate processing apparatus according to claim 14, wherein
The transport unit of the indexer unit takes two substrates from the first return placement unit at the same time,
The substrate processing apparatus, wherein the first return placement unit is configured so that at least four or more substrates can be placed on the first return placement unit. The substrate processing apparatus according to any one of claims 1 to 16,
The first transport mechanism of the indexer unit performs one of the supply operation and the collection operation, and does not perform the other of the supply operation and the collection operation,
The transport unit of the indexer unit,
A second transport mechanism that performs the other of the supply operation and the collection operation without performing the one of the supply operation and the collection operation;
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 17,
The substrate processing apparatus, wherein the second transport mechanism of the indexer unit further performs the interlayer transport operation. The substrate processing apparatus according to any one of claims 1 to 18,
The last layer through which the board passes last among the above-mentioned layers is the final layer,
The transport unit of the indexer unit transports a substrate from the first placement unit of the last layer to the carrier placed on the carrier placement unit,
The substrate processing apparatus includes:
A carrier evacuation section for mounting the carrier at a position retreated from the carrier mounting section,
A carrier transport unit that transports the carrier between the carrier mounting unit and the carrier retracting unit,
With
The control unit detects a payout operation in which the main transport mechanism in the final hierarchy places a substrate on the first placement unit in the final hierarchy, and detects the payout operation of the main transport mechanism in the final hierarchy. A substrate processing apparatus that determines an operation timing of the carrier transport unit based on a result. The substrate processing apparatus according to claim 19,
The control unit is configured to, based on a detection result of the payout operation of the main transport mechanism in the final hierarchy, determine that the substrate to be loaded into the carrier placed in the carrier retreat unit is the first substrate in the final hierarchy. Determine whether or not it is placed on the receiver,
When the control unit determines that the substrate to be carried into the carrier mounted on the carrier evacuation unit is mounted on the first mounting unit on the last level, the control unit performs the carrier evacuation A substrate processing apparatus that starts an operation of the carrier transport unit that transports the carrier from the unit to the carrier mounting unit. A substrate processing method,
A supplying step of transporting the substrate from the carrier to at least one of the plurality of layers,
A processing step of performing processing on the substrate while transporting the substrate in each of the plurality of layers,
An interlayer transport step of transporting a substrate between two different levels,
A collecting step of transferring a substrate from at least one of the plurality of layers to the carrier;
With
A substrate processing method in which at least one of the supply step and the recovery step and the interlayer transfer step are performed by the same single transfer mechanism.

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