JP2020050752A - Polishing liquid, concentrated liquid thereof, manufacturing method of polishing treated article using polishing liquid, and polishing method of substrate using polishing liquid - Google Patents
Polishing liquid, concentrated liquid thereof, manufacturing method of polishing treated article using polishing liquid, and polishing method of substrate using polishing liquid Download PDFInfo
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- 238000005498 polishing Methods 0.000 title claims abstract description 221
- 239000007788 liquid Substances 0.000 title claims abstract description 95
- 239000000758 substrate Substances 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 127
- 239000006061 abrasive grain Substances 0.000 claims abstract description 84
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 58
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims abstract description 55
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000002245 particle Substances 0.000 claims description 33
- 230000003746 surface roughness Effects 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 19
- 239000002002 slurry Substances 0.000 claims description 17
- 238000002360 preparation method Methods 0.000 claims description 9
- 239000012141 concentrate Substances 0.000 claims description 7
- 238000007865 diluting Methods 0.000 claims description 5
- 239000003082 abrasive agent Substances 0.000 claims description 2
- 238000000227 grinding Methods 0.000 description 13
- 239000011521 glass Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 239000008119 colloidal silica Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 241001050985 Disco Species 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910052910 alkali metal silicate Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 238000006482 condensation reaction Methods 0.000 description 2
- 239000006059 cover glass Substances 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 239000003002 pH adjusting agent Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 2
- 238000003746 solid phase reaction Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- -1 and if necessary Substances 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- GHLITDDQOMIBFS-UHFFFAOYSA-H cerium(3+);tricarbonate Chemical compound [Ce+3].[Ce+3].[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O GHLITDDQOMIBFS-UHFFFAOYSA-H 0.000 description 1
- HSJPMRKMPBAUAU-UHFFFAOYSA-N cerium(3+);trinitrate Chemical compound [Ce+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O HSJPMRKMPBAUAU-UHFFFAOYSA-N 0.000 description 1
- UNJPQTDTZAKTFK-UHFFFAOYSA-K cerium(iii) hydroxide Chemical compound [OH-].[OH-].[OH-].[Ce+3] UNJPQTDTZAKTFK-UHFFFAOYSA-K 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 238000010335 hydrothermal treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 229920000592 inorganic polymer Polymers 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
Description
本発明は、シリカ質材料からなる基板の研磨液に関する。また本発明は、該研磨液の濃縮液、該研磨液を用いる研磨処理物品の製造方法及び該研磨液を用いる基板の研磨方法に関する。 The present invention relates to a polishing liquid for a substrate made of a siliceous material. The present invention also relates to a concentrated solution of the polishing liquid, a method for producing a polishing article using the polishing liquid, and a method for polishing a substrate using the polishing liquid.
近年、スマートフォン等の携帯端末用のイメージセンサーには、端末の薄型化を目的として、カバーガラスを含めたセンサーの薄型化が求められている。この目的のために、イメージセンサーのカバーガラスは、これを研削して薄化した後、ガラス表面に傷等がないように、仕上げ研磨によって平滑化される。 2. Description of the Related Art In recent years, image sensors for mobile terminals such as smartphones have been required to have a thin sensor including a cover glass for the purpose of thinning the terminal. For this purpose, the cover glass of the image sensor is thinned by grinding, and then smoothed by finish polishing so that the glass surface does not have scratches or the like.
ガラス基板を研磨する目的で、セリア砥粒及びシリカ粒子を含んだ研磨液を使用することが知られている(特許文献1参照)。この研磨液によれば、非晶質ガラス基板の研磨において、研磨速度の向上と、研磨後の基板表面の表面粗さ、ピット、及び傷の低減を実現できると、同文献には記載されている。 It is known to use a polishing liquid containing ceria abrasive grains and silica particles for the purpose of polishing a glass substrate (see Patent Document 1). According to the same document, according to this polishing liquid, in polishing an amorphous glass substrate, it is possible to improve the polishing rate and reduce the surface roughness, pits, and scratches on the substrate surface after polishing. I have.
しかし、特許文献1に記載の研磨液を用いた場合であっても、ガラス基板の表面状態によっては、研磨に時間を要する場合がある。したがって本発明の課題は、研削等の後のガラス基板を仕上げ研磨するときの研磨レートが向上し得る研磨液を提供することにある。 However, even when the polishing liquid described in Patent Literature 1 is used, depending on the surface state of the glass substrate, polishing may require time. Therefore, an object of the present invention is to provide a polishing liquid capable of improving a polishing rate when final polishing a glass substrate after grinding or the like.
本発明者らは鋭意研究を積み重ねた結果、所定の表面状態になっているシリカ質基板を仕上げ研磨するときに、所定の粒径のセリア砥粒と、所定の粒径のシリカ砥粒とを、研磨液中に所定の含有割合で、且つ各砥粒を所定の範囲の含有量で含む研磨液を用いることによって、前記課題が解決されることを見出した。 The inventors of the present invention have conducted intensive studies, and as a result, when finish polishing a siliceous substrate having a predetermined surface state, a ceria abrasive having a predetermined particle size and a silica abrasive having a predetermined particle size are used. It has been found that the above problem can be solved by using a polishing liquid containing a predetermined content of each abrasive grain in a predetermined range in the polishing liquid.
本発明は、JIS B0601に規定される表面粗さRaが0.01μm以上0.2μm以下であるシリカ質材料からなる基板を研磨するために用いられる研磨液であって、
セリア砥粒と、シリカ砥粒と、水とを含み、
前記セリア砥粒の平均粒径D50が120nm以上550nm以下であり、
前記シリカ砥粒の平均粒径D50が40nm以上140nm以下であり、
前記セリア砥粒に対する前記シリカ砥粒の質量比であるシリカ砥粒/セリア砥粒の値が4/100以上150/100以下であり、
前記セリア砥粒の含有量が0.25質量%以上2.5質量%以下であり、
前記シリカ砥粒の含有量が0.1質量%以上1.5質量%以下である、研磨液を提供することにより前記の課題を解決したものである。
The present invention provides a polishing liquid used for polishing a substrate made of a siliceous material having a surface roughness Ra defined by JIS B0601 of 0.01 μm or more and 0.2 μm or less,
Including ceria abrasive grains, silica abrasive grains, and water,
The average particle diameter D 50 of the ceria abrasive grains is at 120nm than 550nm or less,
The average particle diameter D 50 of the silica abrasive is at 40nm or more 140nm or less,
The value of silica abrasive grains / ceria abrasive grains, which is the mass ratio of the silica abrasive grains to the ceria abrasive grains, is 4/100 or more and 150/100 or less,
The content of the ceria abrasive is 0.25% by mass or more and 2.5% by mass or less,
The object has been achieved by providing a polishing liquid in which the content of the silica abrasive grains is 0.1% by mass or more and 1.5% by mass or less.
また、本発明は、セリア砥粒と、シリカ砥粒と、水とを含む研磨スラリー調製用濃縮液であって、
前記セリア砥粒の平均粒径D50が120nm以上550nm以下であり、
前記シリカ砥粒の平均粒径D50が40nm以上140nm以下であり、
前記セリア砥粒に対する前記シリカ砥粒の質量比であるシリカ砥粒/セリア砥粒の値が4/100以上150/100以下であり、
前記研磨スラリー調製用濃縮液は、これを水で希釈することによって、JIS B0601に規定される表面粗さRaが0.01μm以上0.2μm以下であるシリカ質材料からなる基板を研磨するための研磨液として用いられるものであり、
前記研磨スラリー調製用濃縮液は、これを水で5倍以上50倍以下に希釈して研磨液としたときの、該研磨液での前記セリア砥粒の含有量が0.25質量%以上2.5質量%以下となり、且つ前記シリカ砥粒の含有量が0.1質量%以上1.5質量%以下となる量の前記シリカ砥粒及び前記セリア砥粒を含有している、研磨スラリー調製用濃縮液である。
Further, the present invention is a concentrated solution for preparing a polishing slurry containing ceria abrasive grains, silica abrasive grains, and water,
The average particle diameter D 50 of the ceria abrasive grains is at 120nm than 550nm or less,
The average particle diameter D 50 of the silica abrasive is at 40nm or more 140nm or less,
The value of silica abrasive grains / ceria abrasive grains, which is the mass ratio of the silica abrasive grains to the ceria abrasive grains, is 4/100 or more and 150/100 or less,
The polishing slurry preparation concentrate is diluted with water to polish a substrate made of a siliceous material having a surface roughness Ra defined by JIS B0601 of 0.01 μm or more and 0.2 μm or less. It is used as a polishing liquid,
The concentration of the ceria abrasive grains in the polishing slurry is 0.25% by mass or more when the polishing slurry preparation concentrated solution is diluted to 5 to 50 times with water to obtain a polishing solution. Preparation of a polishing slurry containing the silica abrasive grains and the ceria abrasive grains in an amount of not more than 0.5% by mass and a content of the silica abrasive particles of not less than 0.1% by mass and not more than 1.5% by mass. Concentrate.
また、本発明は、JIS B0601に規定される表面粗さRaが0.01μm以上0.2μm以下であるシリカ質材料からなる基板を、研磨液を用いて研磨する工程を備える研磨処理物品の製造方法であって、前記研磨液として、請求項1に記載の研磨液を用いるか、又は請求項2に記載の研磨スラリー調製用濃縮液を水で希釈して得た研磨液を用いる、研磨処理物品の製造方法を提供するものである。 Further, the present invention provides a method of manufacturing a polishing-treated article, comprising a step of polishing a substrate made of a siliceous material having a surface roughness Ra specified in JIS B0601 of 0.01 μm or more and 0.2 μm or less using a polishing liquid. A polishing method, wherein the polishing liquid according to claim 1 is used as the polishing liquid or a polishing liquid obtained by diluting the concentrated liquid for preparing a polishing slurry according to claim 2 with water. A method for manufacturing an article is provided.
更に本発明は、JIS B0601に規定される表面粗さRaが0.01μm以上0.2μm以下であるシリカ質材料からなる基板を、研磨液を用いて研磨する工程を備える基板の研磨方法であって、前記研磨液として、請求項1に記載の研磨液を用いるか、又は請求項2に記載の研磨スラリー調製用濃縮液を水で希釈して得た研磨液を用いる、基板の研磨方法を提供するものである。 Further, the present invention is a method for polishing a substrate, comprising a step of polishing a substrate made of a siliceous material having a surface roughness Ra prescribed in JIS B0601 of 0.01 μm or more and 0.2 μm or less using a polishing liquid. A polishing method for a substrate, wherein the polishing liquid according to claim 1 is used as the polishing liquid, or a polishing liquid obtained by diluting a concentrated liquid for preparing a polishing slurry according to claim 2 with water is used. To provide.
本発明によれば、シリカ質材料からなる基板を研削等した後に仕上げ研磨するときの研磨レートが向上する。 ADVANTAGE OF THE INVENTION According to this invention, the polishing rate at the time of finish-polishing after grinding | polishing etc. of the board | substrate which consists of a siliceous material improves.
以下本発明を、その好ましい実施形態に基づき説明する。本発明の研磨液は、JIS B0601に規定される表面粗さRaが0.01μm以上0.2μm以下の基板を研磨するために用いられるものである。この基板はシリカ質材料からなるものである。以下、簡便のため、本発明で研磨の対象となる基板のことを「シリカ質基板」ともいう。シリカ質基板は、その表面粗さRaが0.01μm以上0.2μm以下の状態になっていれば、その表面状態を実現するための加工手段に特に制限はない。加工手段の例としては、砥石を用いる研削処理やラッピング処理が挙げられる。本発明者の検討の結果、シリカ質材料からなる基板の表面粗さRaが上述の範囲の状態で、後述する研磨液を用いて該基板を仕上げ研磨すると、意外にも高研磨レートが達成されることが判明した。この観点から、仕上げ研磨に付されるシリカ質基板の表面粗さRaは、0.2μm以下であることが好ましく、0.1μm以下であることが更に好ましい。表面粗さRaの下限値は、仕上げ研磨後の表面粗さとの関係から、0.01μm以上であることが好ましく、0.02μm以上であることが更に好ましい。仕上げ研磨とは、研磨対象物の表面粗さRaを0.003μm以下の表面状態にする操作のことである。 Hereinafter, the present invention will be described based on preferred embodiments. The polishing liquid of the present invention is used for polishing a substrate having a surface roughness Ra prescribed in JIS B0601 of 0.01 μm or more and 0.2 μm or less. This substrate is made of a siliceous material. Hereinafter, for simplicity, a substrate to be polished in the present invention is also referred to as a “silica substrate”. The processing means for realizing the surface state of the siliceous substrate is not particularly limited as long as the surface roughness Ra is in the range of 0.01 μm to 0.2 μm. Examples of the processing means include a grinding process using a grindstone and a lapping process. As a result of the study by the present inventors, when the surface roughness Ra of the substrate made of a siliceous material is in the above-mentioned range and the substrate is finish-polished with a polishing liquid described later, a surprisingly high polishing rate is achieved. Turned out to be. From this viewpoint, the surface roughness Ra of the siliceous substrate subjected to the final polishing is preferably 0.2 μm or less, more preferably 0.1 μm or less. The lower limit of the surface roughness Ra is preferably 0.01 μm or more, and more preferably 0.02 μm or more, from the relationship with the surface roughness after the finish polishing. The finish polishing is an operation for bringing the surface roughness Ra of the object to be polished to a surface state of 0.003 μm or less.
シリカ質基板の表面粗さRaは、JIS B0601に準じ、AFM「品番:DIMENSION Icon」(ブルカー社製)によって測定される。測定結果は、同社のソフトウエア「Nanoscope Analysis」を用いて解析する。測定条件は、測定範囲:10μm×10μm、測定点:256ライン、スキャンレート:約1Hzとする。 The surface roughness Ra of the siliceous substrate is measured by AFM “Model No .: DIMENSION Icon” (manufactured by Bruker) according to JIS B0601. The measurement results are analyzed using the company's software "Nanoscope Analysis". The measurement conditions are as follows: measurement range: 10 μm × 10 μm, measurement point: 256 lines, scan rate: about 1 Hz.
上述のとおり基板はシリカ質材料からなるものである。「シリカ質材料」とは、シリカ(SiO2)を繰り返し単位として有する無機重合体のことである。シリカ質材料は結晶質のものであってもよく、あるいは非晶質のものであってもよい、結晶質のシリカ質材料としては例えば石英が挙げられる。一方、非晶質のシリカ質材料としては、シリカ質ガラス材料、例えばケイ酸ガラス、石英ガラス、ケイ酸アルカリガラス、ソーダ石灰ガラス、ホウケイ酸ガラス、鉛ガラス等が挙げられるが、これらに限られない。 As described above, the substrate is made of a siliceous material. "Silica material" refers to an inorganic polymer having silica (SiO 2 ) as a repeating unit. The siliceous material may be crystalline or amorphous. The crystalline siliceous material includes quartz, for example. On the other hand, examples of the amorphous siliceous material include siliceous glass materials such as silicate glass, quartz glass, alkali silicate glass, soda-lime glass, borosilicate glass, and lead glass, but are not limited thereto. Absent.
上述したシリカ質基板を研磨するために用いられる本発明の研磨液は、セリア砥粒と、シリカ砥粒と、水とを含んでいる。以下、これらの成分について詳述する。 The polishing liquid of the present invention used for polishing the above-mentioned siliceous substrate contains ceria abrasive grains, silica abrasive grains, and water. Hereinafter, these components will be described in detail.
セリア砥粒は、酸化セリウム(CeO2)の粒子からなる。セリア砥粒としては、公知の各種製造方法によって得られたものが特に制限なく使用できる。例えば純度99質量%以上の高純度炭酸セリウム塩又は高純度硝酸セリウム塩を出発原料とし、これらを焼成した後に粉砕して得られる酸化セリウム粒子が使用できる。あるいは、水酸化セリウムの水性スラリーを調製し、これをオートクレーブに入れて100℃以上の温度で自生圧力下に水熱処理することにより得られるコロイダルセリアが使用できる。 The ceria abrasive grains are made of cerium oxide (CeO 2 ) particles. As the ceria abrasives, those obtained by various known production methods can be used without particular limitation. For example, cerium oxide particles obtained by using a high-purity cerium carbonate salt or a high-purity cerium nitrate salt having a purity of 99% by mass or more as a starting material, calcining and pulverizing them, can be used. Alternatively, colloidal ceria obtained by preparing an aqueous slurry of cerium hydroxide, placing the slurry in an autoclave, and performing a hydrothermal treatment at a temperature of 100 ° C. or more under autogenous pressure can be used.
セリア砥粒は、仕上げ研磨時の研磨レートを向上させる観点から、その平均粒径D50が、120nm以上550nm以下であることが好ましく、350nm以上520nm以下であることが更に好ましく、380nm以上500nm以下であることが特に好ましい。平均粒径D50とは、レーザー回折散乱式粒度分布測定法又は動的光散乱式粒度分布測定法など、各粒度分布範囲の測定に適した測定法による累積体積50容量%における体積累積粒径D50のことである。以下「D50」というときには、これらの方法で測定された粒径のことを意味する。 Ceria abrasive grains, from the viewpoint of improving the polishing rate at the time of the finish polishing, the average particle diameter D 50 is preferably at 120nm than 550nm or less, further preferably 350nm or more 520nm or less, 380 nm or more 500nm or less Is particularly preferred. The average particle size D 50 is a volume cumulative particle size at a cumulative volume of 50% by volume, which is a measurement method suitable for measuring each particle size distribution range, such as a laser diffraction scattering type particle size distribution measuring method or a dynamic light scattering type particle size distribution measuring method. D is that of 50. Hereinafter, “D 50 ” means the particle size measured by these methods.
研磨液中のセリア砥粒の含有量は、仕上げ研磨時の研磨レートを向上させる観点から、0.25質量%以上2.5質量%以下であることが好ましく、0.5質量%以上2.0質量%以下であることが更に好ましく、1.0質量%以上1.5質量%以下であることが特に好ましい。 The content of the ceria abrasive grains in the polishing liquid is preferably from 0.25% by mass to 2.5% by mass, and more preferably from 0.5% by mass to 2.5% by mass from the viewpoint of improving the polishing rate at the time of final polishing. The content is more preferably 0% by mass or less, particularly preferably 1.0% by mass or more and 1.5% by mass or less.
セリア砥粒とともに用いられるシリカ砥粒は二酸化ケイ素(SiO2)の粒子からなる。シリカ砥粒としては、例えばコロイダルシリカ粒子、ヒュームドシリカ粒子、表面修飾したシリカ粒子等が挙げられる。仕上げ研磨時に発生する可能性のある研磨傷を抑制する観点から、シリカ砥粒としてコロイダルシリカ粒子が好ましく使用できる。 Silica abrasive grains used with ceria abrasive grains consist of silicon dioxide (SiO 2 ) particles. Examples of the silica abrasive grains include colloidal silica particles, fumed silica particles, and silica particles whose surface has been modified. Colloidal silica particles can be preferably used as the silica abrasive from the viewpoint of suppressing polishing scratches that may occur during the final polishing.
コロイダルシリカ粒子としては、公知の各種製造方法によって得られたものを特に制限なく使用できる。例えば、ケイ酸ナトリウム等のケイ酸アルカリ金属塩を原料とし、これを水中で縮合反応させて粒子を成長させる水ガラス法で得られたものが使用できる。あるいは、テトラエトキシシラン等のアルコキシシランを原料とし、アルコール等の水溶性有機溶媒を含有する水中で縮合反応させて成長させるアルコキシシラン法で得られたものが使用できる。 As the colloidal silica particles, those obtained by various known production methods can be used without particular limitation. For example, those obtained by a water glass method in which an alkali metal silicate such as sodium silicate is used as a raw material, and this is subjected to a condensation reaction in water to grow particles are used. Alternatively, those obtained by an alkoxysilane method in which an alkoxysilane such as tetraethoxysilane or the like is used as a raw material and a condensation reaction is carried out in water containing a water-soluble organic solvent such as alcohol to grow the same.
仕上げ研磨時の研磨レートを向上させる観点から、シリカ砥粒は、その平均粒径D50が、40nm以上140nm以下であることが好ましく、60nm以上120nm以下であることが更に好ましく、70nm以上100nm以下であることが特に好ましい。 From the viewpoint of improving the polishing rate at the time of the finish polishing, the silica abrasive has an average particle diameter D 50, is preferably 40nm or more 140nm or less, more preferably 60nm or more 120nm or less, 70 nm or more 100nm or less Is particularly preferred.
研磨液中のシリカ砥粒の含有量は、仕上げ研磨時の研磨レートを向上させる観点から、0.1質量%以上1.5質量%以下であることが好ましく、0.5質量%以上1.2質量%以下であることが更に好ましく、0.8質量%以上1.0質量%以下であることが特に好ましい。 The content of the silica abrasive grains in the polishing liquid is preferably from 0.1% by mass to 1.5% by mass, and more preferably from 0.5% by mass to 1.5% by mass, from the viewpoint of improving the polishing rate at the time of final polishing. The content is more preferably 2% by mass or less, particularly preferably 0.8% by mass or more and 1.0% by mass or less.
研磨液中のシリカ砥粒及びセリア砥粒それぞれの含有量は上述の範囲であるところ、セリア砥粒に対するシリカ砥粒の質量比である、シリカ砥粒/セリア砥粒の値も仕上げ研磨時の研磨レートの向上に寄与する。この観点から、シリカ砥粒/セリア砥粒の値は、4/100以上150/100以下であることが好ましく、50/100以上120/100以下であること更に好ましく、80/100以上100/100以下であることが特に好ましい。 Although the content of each of the silica abrasive grains and the ceria abrasive grains in the polishing liquid is within the above range, the value of silica abrasive grains / ceria abrasive grains, which is the mass ratio of silica abrasive grains to ceria abrasive grains, is also at the time of final polishing. It contributes to the improvement of the polishing rate. In this respect, the value of silica abrasive grains / ceria abrasive grains is preferably from 4/100 to 150/100, more preferably from 50/100 to 120/100, and more preferably from 80/100 to 100/100. It is particularly preferred that:
本発明の研磨液において、セリア砥粒及びシリカ砥粒以外の砥粒を含有することは、発明の効果を損なわない限り許容される。しかし、研削等を行った後のシリカ質基板を仕上げ研磨するときの研磨レートを向上させる効果を一層顕著なものとする観点から、研磨液中に含有される砥粒は、セリア砥粒及びシリカ砥粒のみであることが好ましい。 The polishing liquid of the present invention may contain abrasive grains other than ceria abrasive grains and silica abrasive grains as long as the effects of the present invention are not impaired. However, from the viewpoint of making the effect of improving the polishing rate when the final polishing of the siliceous substrate after grinding or the like performed more remarkable, the abrasive grains contained in the polishing liquid are ceria abrasive grains and silica. It is preferable that only abrasive grains are used.
水としては、蒸留水、イオン交換水、純水、超純水等が挙げられる。研磨液中の水の含有量は、仕上げ研磨するときに研磨レートを向上させる観点から、95質量%以上98質量%以下であることが好ましい。本発明の研磨液には、本発明の効果を損なわない限りにおいて水以外の液媒体が含まれていてもよいが、シリカ質基板を仕上げ研磨するときの研磨レートを向上させる効果を一層顕著なものとする観点から、液媒体は水のみであることが好ましい。 Examples of the water include distilled water, ion-exchanged water, pure water, ultrapure water, and the like. The content of water in the polishing liquid is preferably 95% by mass or more and 98% by mass or less from the viewpoint of improving the polishing rate when performing final polishing. The polishing liquid of the present invention may contain a liquid medium other than water as long as the effects of the present invention are not impaired, but the effect of improving the polishing rate when final polishing the siliceous substrate is more remarkable. In light of this, the liquid medium is preferably water only.
前記研磨液には、上述した成分以外に、必要に応じて添加剤を含有させることができる。添加剤としては、例えばpH調整剤、粘度調整剤、キレート剤、消泡剤、界面活性剤、防錆剤、防腐剤等が挙げられる。これらの成分は、単独又は2種以上を混合して用いることができる。 The polishing liquid may contain an additive, if necessary, in addition to the components described above. Examples of the additive include a pH adjuster, a viscosity adjuster, a chelating agent, an antifoaming agent, a surfactant, a rust inhibitor, a preservative, and the like. These components can be used alone or in combination of two or more.
本発明の研磨液は、例えば、セリア砥粒、シリカ砥粒、及び必要に応じてpH調整剤等の添加剤を、水とともに攪拌混合することによって調製できる。各成分を混合する順番や、混合するときの温度、混合時間等は、特に制限されない。 The polishing liquid of the present invention can be prepared, for example, by stirring and mixing ceria abrasive grains, silica abrasive grains, and if necessary, additives such as a pH adjuster with water. The order of mixing the components, the temperature at the time of mixing, the mixing time, and the like are not particularly limited.
本発明においては、予め研磨スラリー調製用濃縮液を調製しておき、この濃縮液を水で所定倍率に希釈することで、上述した濃度のセリア砥粒及びシリカ砥粒を含む研磨液を調製してもよい。上述した研磨液を直接調製することに代えて、その濃縮液を調製することで、貯蔵・運搬・保管等に係るコストを抑制できるという利点がある。濃縮液は、研磨の直前に希釈して研磨液とすることができる。あるいは、仕上げ研磨に用いられる研磨定盤上に濃縮液と水とを供給し、該研磨定盤上で研磨液を調製するようにしてもよい。 In the present invention, a polishing liquid containing a ceria abrasive grain and a silica abrasive grain having the above-described concentration is prepared by preparing a polishing slurry preparation concentrate in advance and diluting the concentrate with water at a predetermined magnification. You may. By preparing a concentrated liquid instead of directly preparing the above-mentioned polishing liquid, there is an advantage that costs related to storage, transportation, storage and the like can be suppressed. The concentrated liquid can be diluted just before polishing to obtain a polishing liquid. Alternatively, the concentrated liquid and water may be supplied onto a polishing platen used for finish polishing, and the polishing liquid may be prepared on the polishing platen.
濃縮液は、これを水で5倍以上50倍以下に希釈して研磨液とすることが好ましい。希釈倍率がX倍とは、1質量部の濃縮液に対してX−1質量部の水を加えて希釈することを意味する。濃縮液は、これを水で所定倍率に希釈して研磨液としたときに、該研磨液中での前記セリア砥粒の含有量が上述した範囲となる量のセリア砥粒及びシリカ砥粒を含有している。また、濃縮液中のセリア砥粒に対するシリカ砥粒の質量比であるシリカ砥粒/セリア砥粒の値は、上述した研磨液中のシリカ砥粒/セリア砥粒の値と同様である。 It is preferable that the concentrated liquid is diluted 5 to 50 times with water to obtain a polishing liquid. The dilution factor of X means that 1 part by mass of the concentrated solution is diluted by adding X-1 part by mass of water. When the concentrated liquid is diluted with water at a predetermined magnification to obtain a polishing liquid, the content of the ceria abrasive in the polishing liquid is in the above-mentioned range. Contains. Further, the value of silica abrasive grains / ceria abrasive grains, which is the mass ratio of silica abrasive grains to ceria abrasive grains in the concentrated liquid, is the same as the above-described value of silica abrasive grains / ceria abrasive grains in the polishing liquid.
本発明の研磨液によって仕上げ研磨するときに研磨レートが向上するという効果が実現できる理由は明らかではないが、以下のように推定される。すなわち、基板表面の結晶相の崩れによりセリア粒子の固相反応による化学的研磨力が作用しづらい中、シリカ粒子を添加することによって、シリカ粒子の物理的研磨力が作用し、基板表面の結晶相をより早く整えることとなり、セリア粒子の固相反応による化学的研磨力が促進され、0.2μm以下の表面粗さの基板を研磨するときの研磨レートが向上する。ただし、前記メカニズムは推定によるものであり、本発明は前記メカニズムに限定して解釈されない。 It is not clear why the effect of improving the polishing rate can be realized when the final polishing is performed with the polishing liquid of the present invention, but it is estimated as follows. That is, while the chemical polishing force due to the solid phase reaction of ceria particles is hard to act due to the collapse of the crystal phase on the substrate surface, the physical polishing force of the silica particles acts by adding silica particles, The phase is adjusted earlier, the chemical polishing power by the solid-phase reaction of the ceria particles is promoted, and the polishing rate when polishing a substrate having a surface roughness of 0.2 μm or less is improved. However, the mechanism is presumed, and the present invention is not construed as being limited to the mechanism.
本発明においては、上述した研磨液を用いてシリカ質基板を研磨する研磨方法が行われる。また上述した基板を用いてシリカ質基板を研磨することで、研磨処理物品が製造される。かかる研磨方法を行う場合、又は研磨処理物品の製造を行う場合には通常の研磨装置を使用できる。研磨装置としては、基板を保持するキャリアと、研磨布が固定された研磨パッドとを備えた片面研磨装置、あるいは両面研磨装置等を用いることができる。片面研磨装置は、キャリアで基板を保持し、該装置に設けられた定盤の上に固定された研磨パッドに前記研磨液を滴下しながら、基板及び研磨パッドを相対運動させることで基板の片面を研磨する装置である。両面研磨装置は、キャリアで基板を保持し、該装置に設けられた上定盤に固定された研磨パッドと下定盤に固定された研磨パッドとの間に前記研磨液を滴下しながら、基板及び研磨パッドを相対運動させることで基板の両面を研磨する装置である。研磨パッド、研磨液、及び基板の摩擦による物理的作用と、研磨液が基板にもたらす化学的作用とによって基板が研磨される。 In the present invention, a polishing method for polishing a siliceous substrate using the above-described polishing liquid is performed. In addition, a polished article is manufactured by polishing a siliceous substrate using the above-described substrate. When performing such a polishing method or when manufacturing a polished article, an ordinary polishing apparatus can be used. As the polishing apparatus, a single-side polishing apparatus having a carrier for holding a substrate and a polishing pad to which a polishing cloth is fixed, a double-side polishing apparatus, or the like can be used. A single-side polishing apparatus holds a substrate with a carrier and, while dropping the polishing liquid onto a polishing pad fixed on a surface plate provided in the apparatus, moves the substrate and the polishing pad relative to each other so that the one side of the substrate is moved. Is a device for polishing. Double-side polishing apparatus holds the substrate with a carrier, while dropping the polishing liquid between the polishing pad fixed to the upper surface plate provided in the apparatus and the polishing pad fixed to the lower surface plate, the substrate and This is a device for polishing both surfaces of a substrate by relatively moving a polishing pad. The substrate is polished by the physical action of friction between the polishing pad, the polishing liquid and the substrate, and the chemical action of the polishing liquid on the substrate.
研磨パッドとしては、特に限定されず、ポリウレタンタイプ、不織布タイプ、スウェードタイプ等の材質のパッド等を用いてもよい。 The polishing pad is not particularly limited, and a pad of a material such as a polyurethane type, a nonwoven fabric type, and a suede type may be used.
シリカ質基板は、前記研磨液を用いてこれを仕上げ研磨する前に、砥石を用いた研削工程やラッピング工程(粗研磨工程)に付される。これによってシリカ基板は、その表面粗さRaが0.01μm以上0.2μm以下に調整される。仕上げ研磨は、これらの工程の直後に行われることが好ましい。「直後」とは、砥石を用いた加工工程と、本発明の研磨液を用いた仕上げ研磨工程との間に、何らの工程も介在しないことを意味する。 The silica-based substrate is subjected to a grinding step using a grindstone and a lapping step (rough polishing step) before finish polishing the same using the polishing liquid. As a result, the surface roughness Ra of the silica substrate is adjusted to 0.01 μm or more and 0.2 μm or less. Finish polishing is preferably performed immediately after these steps. The term “immediately after” means that no step is interposed between the processing step using the grindstone and the finish polishing step using the polishing liquid of the present invention.
研磨装置を用いてシリカ質基板を仕上げ研磨するときには、表面粗さRaが0.01μm以上0.2μm以下に調整された直後のシリカ質基板を保持具で保持する。そして、シリカ質基板と研磨パッドとの間に本発明の研磨液を供給しながら、シリカ質基板の表面に研磨パッドを所定の圧力で押し付ける。この状態下に研磨パッド及び/又は保持具を回転させることによって、シリカ質基板を仕上げ研磨する。 When finish polishing the siliceous substrate using the polishing apparatus, the siliceous substrate immediately after the surface roughness Ra is adjusted to 0.01 μm or more and 0.2 μm or less is held by the holder. Then, the polishing pad is pressed against the surface of the siliceous substrate at a predetermined pressure while supplying the polishing liquid of the present invention between the siliceous substrate and the polishing pad. By rotating the polishing pad and / or the holder in this state, the silica substrate is finish-polished.
シリカ質基板と研磨パッドとの間への前記研磨液の供給量は、コストの観点から、該基板の表面1cm2あたり、0.07mL/分以上0.64mL/分以下であることが好ましく、0.21mL/分以上0.5mL/分以下であることが更に好ましい。研磨パッドをシリカ質基板に押し付ける圧力(研磨荷重)は、基板の耐荷重の観点から、20kPa以上30kPa以下であることが好ましく、23kPa以上28kPa以下であることが更に好ましい。研磨パッドの回転速度は、シリカ質基板の具体的な種類や、使用する研磨装置によっても異なるが、一般的に言って30rpm以上80rpm以下であることが好ましく、45rpm以上65rpm以下であることが更に好ましい。 From the viewpoint of cost, the supply amount of the polishing liquid between the siliceous substrate and the polishing pad is preferably 0.07 mL / min or more and 0.64 mL / min or less per 1 cm 2 of the surface of the substrate, More preferably, it is 0.21 mL / min or more and 0.5 mL / min or less. The pressure (polishing load) for pressing the polishing pad against the siliceous substrate is preferably 20 kPa or more and 30 kPa or less, and more preferably 23 kPa or more and 28 kPa or less, from the viewpoint of the load resistance of the substrate. The rotation speed of the polishing pad varies depending on the specific type of the siliceous substrate and the polishing apparatus to be used, but is generally preferably 30 rpm or more and 80 rpm or less, and more preferably 45 rpm or more and 65 rpm or less. preferable.
以下、実施例により本発明を更に詳細に説明する。しかしながら本発明の範囲は、かかる実施例に制限されない。特に断らない限り、「%」は「質量%」を意味する。 Hereinafter, the present invention will be described in more detail with reference to examples. However, the scope of the present invention is not limited to such embodiments. Unless otherwise specified, “%” means “% by mass”.
〔実施例1〕
平均粒径D50が150nmのセリア砥粒と、平均粒径D50が80nmのシリカ砥粒とを、蒸留水とともに攪拌混合することによって、セリア砥粒の含有量が1.0%に調整され、且つシリカ砥粒の含有量が1.0%に調整された研磨液を得た。
[Example 1]
The ceria abrasive having an average particle diameter D 50 of 150 nm and the silica abrasive having an average particle diameter D 50 of 80 nm are stirred and mixed with distilled water to adjust the content of the ceria abrasive to 1.0%. In addition, a polishing liquid in which the content of silica abrasive grains was adjusted to 1.0% was obtained.
〔実施例2ないし21、及び比較例1ないし10〕
セリア砥粒及びシリカ砥粒の平均粒径D50及び含有量を表1に示す値にした以外は実施例1と同様にして研磨液を調製した。
[Examples 2 to 21, and Comparative Examples 1 to 10]
Except that the average particle diameter D 50 and the content of ceria abrasive and silica abrasive and to the values shown in Table 1 were prepared the polishing solution in the same manner as in Example 1.
〔評価〕
実施例1ないし21の研磨液、比較例1ないし10の研磨液を用いた仕上げ研磨の研磨量を下記方法により測定した。
[Evaluation]
The polishing amount of the final polishing using the polishing liquids of Examples 1 to 21 and the polishing liquids of Comparative Examples 1 to 10 was measured by the following method.
<研削後のシリカ質基板の準備>
ホウケイ酸ガラスの板ガラスからなる基板(独国ショット社製のテンパックス硝子 直径12インチ 厚さ700μm)を準備した。この基板を、株式会社ディスコ製の研磨装置である「DGP8761CMP」(製品名)を用いて研削した。粗上げ部において♯320レジンボンドの砥石を研削ホイールに用いて基板の表面から50μmの位置まで研削した後、次に、仕上げ研削部に基板を搬送し、♯1000レジンボンドの砥石を研削ホイールに用いて、研削後の表面から30μmの位置まで更に研削して、表面粗さRaを0.15μmとした。
<Preparation of silica substrate after grinding>
A substrate made of borosilicate glass plate glass (Tempax glass manufactured by Shot Co., Germany, diameter 12 inches, thickness 700 μm) was prepared. This substrate was ground using a polishing machine “DGP8761CMP” (product name) manufactured by Disco Corporation. After grinding to a position of 50μm from the surface of the substrate using a grinding wheel of # 320 resin bond in the roughing-up section, the substrate is then transferred to the finish grinding section, and a grinding wheel of # 1000 resin bond is applied to the grinding wheel. Then, the surface was further ground to a position of 30 μm from the ground surface to make the surface roughness Ra 0.15 μm.
<研削後のシリカ質基板の研磨>
研削後の基板を、研磨液を用いて仕上げ研磨した。研磨装置には株式会社ディスコ製の「DGP8761CMP」(製品名)を用い、研磨パッドには同社製の「S-PAD」(製品名)を用いた。研磨条件は以下のとおりとした。仕上げ研磨後の基板を洗浄、乾燥した後、AND社製の「GF−600」(製品名)を用いて重量変化を測定し、研磨量(μm)を算出した。その結果を下記表1に示した。なお、仕上げ研磨後の基板の表面粗さRaは0.001μmであった。
研磨条件
・研磨パッドの回転速度:500rpm
・基板の回転速度:505rpm
・研磨荷重:25kPa
・研磨液の供給量:250mL/分(研磨対象面1cm2あたり0.35mL/分)
・研磨時間:2分
<Polishing of silica substrate after grinding>
The ground substrate was finish-polished using a polishing liquid. "DGP8761CMP" (product name) manufactured by Disco Corporation was used for the polishing apparatus, and "S-PAD" (product name) manufactured by the company was used for the polishing pad. The polishing conditions were as follows. After the substrate after the final polishing was washed and dried, the change in weight was measured using “GF-600” (product name) manufactured by AND Corporation, and the polishing amount (μm) was calculated. The results are shown in Table 1 below. The surface roughness Ra of the substrate after the finish polishing was 0.001 μm.
Polishing condition ・ Rotation speed of polishing pad: 500 rpm
・ Rotation speed of substrate: 505 rpm
・ Polishing load: 25kPa
・ Supply rate of polishing liquid: 250 mL / min (0.35 mL / min per 1 cm 2 of polishing target surface)
・ Polishing time: 2 minutes
表1に示す結果から明らかなとおり、各実施例の研磨液を用いてシリカ質基板を仕上げ研磨したときの研磨量は、比較例の研磨液を用いた場合に比べて多いことが判る。比較例1〜4、6、9及び10の研磨液を用いた場合には、該研磨液中にセリア砥粒のみが含まれ、シリカ砥粒が含まれていないことに起因して、研磨量が少なくなっている。比較例5の研磨液を用いた場合には、シリカ砥粒の粒径が過度に小さいことに起因して、研磨量が少なくなっている。比較例7及び8の研磨液を用いた場合には、セリア砥粒の含有量が過度に多いことに起因して、研磨量が少なくなっている。 As is clear from the results shown in Table 1, the polishing amount when the polishing substrate of each example was finish-polished using the polishing liquid of each example was larger than that when the polishing liquid of the comparative example was used. When the polishing liquids of Comparative Examples 1 to 4, 6, 9, and 10 were used, only the ceria abrasive grains were contained in the polishing liquids, and the polishing amount was reduced due to the absence of silica abrasive grains. Is decreasing. When the polishing liquid of Comparative Example 5 was used, the polishing amount was small due to the excessively small particle size of the silica abrasive grains. When the polishing liquids of Comparative Examples 7 and 8 were used, the polishing amount was small due to the excessively large content of ceria abrasive grains.
Claims (4)
セリア砥粒と、シリカ砥粒と、水とを含み、
前記セリア砥粒の平均粒径D50が120nm以上550nm以下であり、
前記シリカ砥粒の平均粒径D50が40nm以上140nm以下であり、
前記セリア砥粒に対する前記シリカ砥粒の質量比であるシリカ砥粒/セリア砥粒の値が4/100以上150/100以下であり、
前記セリア砥粒の含有量が0.25質量%以上2.5質量%以下であり、
前記シリカ砥粒の含有量が0.1質量%以上1.5質量%以下である、研磨液。 A polishing liquid used for polishing a substrate made of a siliceous material having a surface roughness Ra defined by JIS B0601 of 0.01 μm or more and 0.2 μm or less,
Including ceria abrasive grains, silica abrasive grains, and water,
The average particle diameter D 50 of the ceria abrasive grains is at 120nm than 550nm or less,
The average particle diameter D 50 of the silica abrasive is at 40nm or more 140nm or less,
The value of silica abrasive grains / ceria abrasive grains, which is the mass ratio of the silica abrasive grains to the ceria abrasive grains, is 4/100 or more and 150/100 or less,
The content of the ceria abrasive is 0.25% by mass or more and 2.5% by mass or less,
A polishing liquid wherein the content of the silica abrasive grains is 0.1% by mass or more and 1.5% by mass or less.
前記セリア砥粒の平均粒径D50が120nm以上550nm以下であり、
前記シリカ砥粒の平均粒径D50が40nm以上140nm以下であり、
前記セリア砥粒に対する前記シリカ砥粒の質量比であるシリカ砥粒/セリア砥粒の値が4/100以上150/100以下であり、
前記研磨スラリー調製用濃縮液は、これを水で希釈することによって、JIS B0601に規定される表面粗さRaが0.01μm以上0.2μm以下であるシリカ質材料からなる基板を研磨するための研磨液として用いられるものであり、
前記研磨スラリー調製用濃縮液は、これを水で5倍以上50倍以下に希釈して研磨液としたときの、該研磨液での前記セリア砥粒の含有量が0.25質量%以上2.5質量%以下となり、且つ前記シリカ砥粒の含有量が0.1質量%以上1.5質量%以下となる量の前記シリカ砥粒及び前記セリア砥粒を含有している、研磨スラリー調製用濃縮液。 Ceria abrasive, silica abrasive, and a polishing slurry preparation concentrate containing water,
The average particle diameter D 50 of the ceria abrasive grains is at 120nm than 550nm or less,
The average particle diameter D 50 of the silica abrasive is at 40nm or more 140nm or less,
The value of silica abrasive grains / ceria abrasive grains, which is the mass ratio of the silica abrasive grains to the ceria abrasive grains, is 4/100 or more and 150/100 or less,
The polishing slurry preparation concentrate is diluted with water to polish a substrate made of a siliceous material having a surface roughness Ra defined by JIS B0601 of 0.01 μm or more and 0.2 μm or less. It is used as a polishing liquid,
The concentration of the ceria abrasive grains in the polishing slurry is 0.25% by mass or more when the polishing slurry preparation concentrated solution is diluted 5 to 50 times with water to obtain a polishing solution. Preparation of a polishing slurry containing the silica abrasive grains and the ceria abrasive grains in an amount of 0.5% by mass or less and a content of the silica abrasives of 0.1% by mass or more and 1.5% by mass or less. Concentrate.
前記研磨液として、請求項1に記載の研磨液を用いるか、又は請求項2に記載の研磨スラリー調製用濃縮液を水で希釈して得た研磨液を用いる、研磨処理物品の製造方法。 A method for producing a polished article, comprising a step of polishing a substrate made of a siliceous material having a surface roughness Ra defined by JIS B0601 of 0.01 μm or more and 0.2 μm or less using a polishing liquid,
A method for producing a polishing-treated article, wherein the polishing liquid according to claim 1 is used as the polishing liquid, or a polishing liquid obtained by diluting the concentrated liquid for preparing a polishing slurry according to claim 2 with water.
前記研磨液として、請求項1に記載の研磨液を用いるか、又は請求項2に記載の研磨スラリー調製用濃縮液を水で希釈して得た研磨液を用いる、シリカ質材料からなる基板の研磨方法。 A method for polishing a substrate made of a siliceous material, comprising the step of polishing a substrate having a surface roughness Ra defined by JIS B0601 of 0.01 μm or more and 0.2 μm or less using a polishing liquid,
As the polishing liquid, a polishing liquid according to claim 1 or a polishing liquid obtained by diluting the concentrated liquid for preparing a polishing slurry according to claim 2 with water is used. Polishing method.
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