JP2020047829A - Heating apparatus and heating method - Google Patents

Heating apparatus and heating method Download PDF

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JP2020047829A
JP2020047829A JP2018176048A JP2018176048A JP2020047829A JP 2020047829 A JP2020047829 A JP 2020047829A JP 2018176048 A JP2018176048 A JP 2018176048A JP 2018176048 A JP2018176048 A JP 2018176048A JP 2020047829 A JP2020047829 A JP 2020047829A
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substrate
heating
correction
heating device
hot plate
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JP6722246B2 (en
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央子 梶屋
Oko Kajiya
央子 梶屋
上野　幸一
Koichi Ueno
幸一 上野
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Screen Holdings Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
  • General Induction Heating (AREA)

Abstract

To heat a substrate in clean heating atmosphere.SOLUTION: A heating apparatus includes a hot plate for heating a rectangular substrate, positioned at a heating position, from below, a lifting mechanism for lifting the substrate for the hot plate between a standby position higher than the heating position in the vertical direction and the heating position, and a rectification mechanism having a rectification member capable of abutting on the perimeter of the top face of the substrate. The rectification mechanism rectifies the perimeter of the substrate warped upward to the heating position before heating the substrate by means of the hot plate, by positioning the rectification member at the heating position in the vicinity of four sides of the substrate positioned at the heating position, and controls the posture of the substrate heated by means of the hot plate, by regulating warpage of the perimeter of the substrate farther upward than the heating position while heating the substrate.SELECTED DRAWING: Figure 5

Description

この発明は、矩形状の基板を下方から加熱する加熱装置および加熱方法に関するものである。   The present invention relates to a heating device and a heating method for heating a rectangular substrate from below.

半導体デバイスの製造プロセスのひとつとして、矩形状を有する基板を略水平姿勢で支持しながら基板を下方から加熱する、いわゆる加熱処理が存在している。この加熱処理では、近年、基板の大型化に伴って基板の反りがより大きくなり、均一な加熱処理が難しくなっている。そこで、例えば特許文献１に記載されている矯正技術を用いることが提案されている。この矯正技術では、チャンバーカバーの下面周縁部に傾斜面を設け、当該傾斜面を基板の周縁端を当接させた後、さらにチャンバーカバーをベークプレート（本発明の「ホットプレート」に相当）側に下降させて基板の反りを矯正する。この矯正によって基板とベークプレートとの距離を適切に維持して均一な加熱処理を図っている。   As one of semiconductor device manufacturing processes, there is a so-called heat treatment for heating a substrate from below while supporting the substrate having a rectangular shape in a substantially horizontal posture. In this heat treatment, in recent years, the warpage of the substrate has increased as the size of the substrate has increased, making uniform heat treatment difficult. Therefore, it has been proposed to use a correction technique described in Patent Document 1, for example. In this straightening technique, an inclined surface is provided on the lower edge of the chamber cover, and the inclined surface is brought into contact with the peripheral edge of the substrate. Then, the chamber cover is further placed on a bake plate (corresponding to the "hot plate" of the present invention). To correct the warpage of the substrate. With this correction, the distance between the substrate and the bake plate is appropriately maintained to achieve uniform heat treatment.

特開２００６−３３９４８５号公報JP 2006-339485 A

上記加熱処理では、基板の反り矯正時にチャンバーカバーに設けられた傾斜面と基板の周縁端とが擦れ合うために、パーティクルが発生する可能性がある。このため、清浄な加熱雰囲気で基板を加熱することが難しい。   In the heat treatment, particles may be generated because the inclined surface provided on the chamber cover and the peripheral edge of the substrate rub against each other when the substrate is corrected for warpage. Therefore, it is difficult to heat the substrate in a clean heating atmosphere.

また、上記加熱処理では、チャンバーカバーの傾斜面が基板の周縁端部をベークプレート側に押し付けているため、チャンバーカバーの下降量は矯正すべき反り量よりも大きい。したがって、基板の反り量が多くなると、それに応じて下降量を増大させる必要がある。しかしながら、チャンバーカバーが許容範囲を超えて移動することは妥当ではなく、反り量の増大に対応することが困難な場合がある。この場合、基板の反りを矯正し得ない。特に、近年、ウェーハレベルパッケージ（ＷＬＰ：Ｗａｆｅｒ Ｌｅｖｅｌ Ｐａｃｋａｇｉｎｇ）やパネルレベルパッケージ（ＰＬＰ：Ｐａｎｅｌ Ｌｅｖｅｌ Ｐａｃｋａｇｉｎｇ）といった製造形態で製造される半導体パッケージでは、矩形状のガラス基板上に複数の半導体チップやチップ間の配線などが多層に組み合わされており、それらの熱収縮率や熱膨張率の相違量は単にレジスト層などを積層した半導体基板よりも大きくなっている。そのため、矯正することができる基板の反りの最大量（以下「最大矯正量」という）を高める技術の提供が望まれている。   In the above-described heat treatment, since the inclined surface of the chamber cover presses the peripheral edge of the substrate toward the bake plate, the descending amount of the chamber cover is larger than the amount of warpage to be corrected. Therefore, as the amount of warpage of the substrate increases, it is necessary to increase the amount of descent accordingly. However, it is not appropriate that the chamber cover moves beyond the allowable range, and it may be difficult to cope with the increase in the amount of warpage. In this case, the warpage of the substrate cannot be corrected. Particularly, in recent years, in a semiconductor package manufactured in a manufacturing mode such as a wafer level package (WLP: Wafer Level Packaging) or a panel level package (PLP: Panel Level Packaging), a plurality of semiconductor chips or a plurality of chips are mounted on a rectangular glass substrate. Are interconnected in multiple layers, and the difference between the thermal contraction rate and the thermal expansion rate is larger than that of a semiconductor substrate on which a resist layer or the like is simply laminated. Therefore, it is desired to provide a technique for increasing the maximum amount of substrate warp that can be corrected (hereinafter, referred to as “maximum correction amount”).

この発明は上記課題に鑑みなされたものであり、最大矯正量を高めつつ、清浄な加熱雰囲気で基板を加熱することができる加熱装置および加熱方法を提供することを目的とする。   The present invention has been made in view of the above problems, and has as its object to provide a heating apparatus and a heating method capable of heating a substrate in a clean heating atmosphere while increasing the maximum correction amount.

この発明の一態様は、加熱装置であって、加熱位置に位置決めされる矩形状の基板を下方から加熱するホットプレートと、ホットプレートに対して基板を鉛直方向において加熱位置よりも高い待機位置と加熱位置との間で昇降させる昇降機構と、基板の上面の周縁部に対して当接可能な矯正部材を有する矯正機構とを備え、矯正機構は、加熱位置に位置決めされた基板の四辺の近傍で矯正部材を加熱位置に位置させることで、ホットプレートによる基板の加熱前に基板のうち上方へ反っている周縁部を加熱位置に矯正し、基板の加熱中に基板の周縁部が加熱位置よりも上方に反るのを規制してホットプレートにより加熱される基板の姿勢を制御することを特徴としている。   One embodiment of the present invention is a heating device, a hot plate that heats a rectangular substrate positioned at a heating position from below, and a standby position higher than the heating position in the vertical direction with respect to the hot plate. An elevating mechanism for elevating and lowering between the heating position and a correction mechanism having a correction member capable of abutting against a peripheral portion of the upper surface of the substrate, wherein the correction mechanism is located near four sides of the substrate positioned at the heating position. By positioning the correction member at the heating position, the peripheral portion of the substrate that is warped upward before the substrate is heated by the hot plate is corrected to the heating position, and the peripheral portion of the substrate is moved from the heating position during the heating of the substrate. Is also controlled to control the posture of the substrate heated by the hot plate by restricting the substrate from warping upward.

この発明の他の態様は、加熱方法であって、ホットプレートに対して矩形状の基板を所定の加熱位置に位置決めする工程と、基板の上面の周縁部に対して当接可能な矯正部材を加熱位置よりも高い位置から加熱位置に位置決めされた基板に向けて降下させ、基板の四辺の近傍で矯正部材を加熱位置に位置決めし、矯正部材の下降中に基板のうち上方へ反っている周縁部を加熱位置に矯正する工程と、矯正部材を加熱位置に位置決めした状態のままホットプレートにより基板を加熱するとともに基板の加熱中に基板の周縁部が加熱位置よりも上方に反るのを規制する工程とを備えることを特徴としている。   Another aspect of the present invention is a heating method, comprising: a step of positioning a rectangular substrate at a predetermined heating position with respect to a hot plate; and a correcting member capable of contacting a peripheral portion of an upper surface of the substrate. Lowering from a position higher than the heating position toward the substrate positioned at the heating position, positioning the straightening member at the heating position near the four sides of the substrate, and a peripheral edge of the substrate that is warped upward during the lowering of the straightening member Correcting the part to the heating position and heating the substrate with the hot plate while the correction member is positioned at the heating position, and restricting the peripheral edge of the substrate from warping above the heating position while the substrate is being heated. And a step of performing

このように構成された発明では、矯正部材が基板の上面の周縁部に対して当接可能となっている。そして、矯正部材が加熱位置に位置決めされた基板の四辺の近傍で加熱位置に位置する。ここで、ホットプレートによる基板の加熱前に基板のうち上方へ反っている周縁部は矯正部材に当接して加熱位置に矯正される。また、基板の加熱中に基板の周縁部が加熱位置よりも上方に反ろうとしても、矯正部材に当接して反りが規制される。このように基板の上面に対して矯正部材が鉛直下方に当接することにより基板の姿勢を制御しつつ当該基板をホットプレートにより加熱する。   In the invention configured as described above, the correction member can be brought into contact with the peripheral portion of the upper surface of the substrate. Then, the correction member is located at the heating position near the four sides of the substrate positioned at the heating position. Here, before the substrate is heated by the hot plate, the peripheral portion of the substrate that is warped upward is brought into contact with the correction member and is corrected to the heating position. In addition, even if the peripheral edge of the substrate is warped upward from the heating position during the heating of the substrate, the warpage is regulated by contacting the correction member. As described above, the correction member abuts vertically downward on the upper surface of the substrate, and the substrate is heated by the hot plate while controlling the posture of the substrate.

以上のように、矯正部材が基板の上面に対して鉛直下方に当接して反りを矯正している。このため、パーティクルの発生を抑制して清浄な雰囲気で基板を加熱することができるとともに、従来技術よりも最大矯正量を高めることができる。   As described above, the correction member is in contact with the upper surface of the substrate vertically downward to correct the warp. Therefore, the generation of particles can be suppressed and the substrate can be heated in a clean atmosphere, and the maximum correction amount can be increased as compared with the related art.

本発明に係る加熱装置の第１実施形態を示す図である。It is a figure showing a 1st embodiment of a heating device concerning the present invention. 図１のＡ−Ａ線断面図である。FIG. 2 is a sectional view taken along line AA of FIG. 1. 支持部に対する矯正ピンの取付を説明するための図である。It is a figure for explaining attachment of a correction pin to a support part. 図１に示す加熱装置による加熱動作を示すフローチャートである。2 is a flowchart showing a heating operation by the heating device shown in FIG. 1. 加熱動作の主要工程を模式的に示す図である。It is a figure which shows the main process of a heating operation typically. 矯正機構を有さない加熱装置で加熱処理を行った場合の温度特性を示すグラフである。It is a graph which shows the temperature characteristic at the time of performing heat processing with the heating device which does not have a straightening mechanism. 本実施形態に係る加熱装置で加熱処理を行った場合の温度特性を示すグラフである。6 is a graph showing temperature characteristics when a heating process is performed by the heating device according to the embodiment. 本発明に係る加熱装置の第２実施形態を示す図である。It is a figure showing a 2nd embodiment of a heating device concerning the present invention. 本発明に係る加熱装置の第３実施形態を示す図である。It is a figure showing a 3rd embodiment of a heating device concerning the present invention. 本発明に係る加熱装置の第４実施形態を示す図である。It is a figure showing a 4th embodiment of a heating device concerning the present invention. 本発明に係る加熱装置の第５実施形態を示す図である。It is a figure showing a 5th embodiment of a heating device concerning the present invention.

図１は、本発明に係る加熱装置の第１実施形態を示す図である。また、図２は図１のＡ−Ａ線断面図である。この加熱装置１は、平面視で矩形状を有し、その表面上に半導体チップや配線などが積層された半導体パッケージ用ガラス基板（以下、単に「基板」という）Ｓを受け入れて加熱するものである。なお、基板の材質や積層物の種類については、これに限定されるものではなく、また例えば半導体パッケージ以外の半導体デバイスの製造に用いられる基板を加熱するものであってもよい。   FIG. 1 is a view showing a first embodiment of a heating device according to the present invention. FIG. 2 is a sectional view taken along line AA of FIG. The heating device 1 has a rectangular shape in a plan view, and receives and heats a semiconductor package glass substrate (hereinafter simply referred to as “substrate”) S on which a semiconductor chip, wiring, and the like are stacked. is there. The material of the substrate and the type of the laminate are not limited to those described above. For example, a substrate used for manufacturing a semiconductor device other than a semiconductor package may be heated.

図１に示すように、加熱装置１は基板Ｓを受け入れるチャンバ１０を備えている。チャンバ１０内で処理を行うことで、加熱処理によって揮発した気体成分が周囲へ飛散するのを防止するとともに、加熱される基板Ｓの周囲を覆うことで熱の放散を抑制しエネルギー効率を高めることができる。これらの目的のために、チャンバ１０は天板１１、側板１２、底板１３およびシャッタ１４を箱型に組み合わせた構造となっている。   As shown in FIG. 1, the heating apparatus 1 includes a chamber 10 for receiving a substrate S. By performing the processing in the chamber 10, it is possible to prevent the gas components volatilized by the heat processing from scattering to the surroundings, and to suppress the dissipation of heat by covering the circumference of the substrate S to be heated, thereby improving the energy efficiency. Can be. For these purposes, the chamber 10 has a structure in which a top plate 11, a side plate 12, a bottom plate 13, and a shutter 14 are combined in a box shape.

シャッタ１４は、チャンバ１０の一方側面に設けられた開口１５に対して開閉自在に取り付けられており、閉状態ではパッキン（図示省略）を介してチャンバ１０の側面に押し付けられることで開口１５を塞ぐ。一方、図１において点線で示すシャッタ１４の開状態では、開放された開口１５を介して外部との間で基板Ｓのやり取りを行うことができる。すなわち、図示しない外部の搬送ロボット等に保持される未処理の基板Ｓが、開口１５を介してチャンバ１０内に搬入される。またチャンバ１０内の処理済みの基板Ｓが、搬送ロボット等によって外部へ搬出される。   The shutter 14 is openably and closably attached to an opening 15 provided on one side surface of the chamber 10, and closes the opening 15 by being pressed against a side surface of the chamber 10 via a packing (not shown) in a closed state. . On the other hand, in the open state of the shutter 14 indicated by the dotted line in FIG. 1, the substrate S can be exchanged with the outside through the opened opening 15. That is, an unprocessed substrate S held by an external transfer robot (not shown) is carried into the chamber 10 through the opening 15. The processed substrate S in the chamber 10 is carried out to the outside by a transfer robot or the like.

チャンバ１０の底部にはホットプレート２０が設けられている。ホットプレート２０の上面には、複数の凹部（図示省略）が設けられ、各凹部に対して凹部の深さよりも若干大径の球体２１が嵌め込まれている。これらの球体２１の頂部で基板Ｓを下方から支持可能となっており、外部から搬入される基板Ｓは半導体チップなどが積層された面を上向きにして球体２１上に載置される。こうしてホットプレート２０の上面からプロキシミティギャップと呼ばれる微小空間が形成された状態で基板Ｓが位置決めされる。このように位置決めされて加熱処理される基板Ｓの位置（本明細書では、鉛直方向Ｚにおける基板Ｓの上面の高さ位置）を本明細書では「本加熱位置」と称する。また、後で詳述するように鉛直方向Ｚにおいて基板Ｓの受渡しを行うために一時的に待機させる待機位置と本加熱位置との間で予備加熱を行う位置を本明細書では「予備加熱位置」と称する。   A hot plate 20 is provided at the bottom of the chamber 10. A plurality of concave portions (not shown) are provided on the upper surface of the hot plate 20, and a sphere 21 having a diameter slightly larger than the depth of the concave portion is fitted into each concave portion. The top of the sphere 21 can support the substrate S from below, and the substrate S carried in from the outside is placed on the sphere 21 with the surface on which the semiconductor chips and the like are stacked facing upward. In this way, the substrate S is positioned with a minute space called a proximity gap formed from the upper surface of the hot plate 20. The position of the substrate S thus positioned and subjected to the heat treatment (in this specification, the height position of the upper surface of the substrate S in the vertical direction Z) is referred to as “main heating position” in this specification. In addition, as will be described in detail later, in the present specification, the position where the preliminary heating is performed between the standby position where the substrate S is temporarily standby to transfer the substrate S in the vertical direction Z and the main heating position is referred to as a “preliminary heating position”. ".

図１に示すように、本加熱位置（図５中の符号Ｐ１）や予備加熱位置（図５中の符号Ｐ２）に位置決めされた基板Ｓに加熱処理を施すために、ホットプレート２０の内部にはヒータ２２が内蔵されている。このヒータ２２に対して装置全体を制御する制御部９０から電力が供給されることでヒータ２２が作動する。これによって、ホットプレート２０の上面からの輻射熱によって基板Ｓが均一に加熱される。なお、球体２１の個数や位置は、基板Ｓの平面サイズ等に応じて適宜に設定することができる。   As shown in FIG. 1, in order to perform a heating process on the substrate S positioned at the main heating position (reference numeral P1 in FIG. 5) and the pre-heating position (reference numeral P2 in FIG. Has a built-in heater 22. Electric power is supplied to the heater 22 from a control unit 90 that controls the entire apparatus, so that the heater 22 operates. Thereby, the substrate S is uniformly heated by the radiant heat from the upper surface of the hot plate 20. Note that the number and position of the spheres 21 can be appropriately set according to the planar size of the substrate S and the like.

加熱装置１には、ホットプレート２０と搬送ロボットとの間での基板Ｓの受け渡しをスムーズに行うために昇降機構３０が設けられている。具体的には、チャンバ１０の底板１３およびホットプレート２０には鉛直方向Ｚに延びる貫通孔３１が複数設けられており、それらの貫通孔３１の各々にリフトピン３２が挿通されている。各リフトピン３２の下端は昇降部材３３に固定されている。昇降部材３３はリフトピン駆動部３４により上下方向に昇降自在に支持されている。制御部９０からの昇降指令に応じてリフトピン駆動部３４が作動して昇降部材３３を昇降させる。これによって各リフトピン３２が一体的に昇降し、リフトピン３２は、その上端がホットプレート２０の球体２１よりも上方に突出する上部位置と、上端が球体２１よりも下方に退避した下部位置との間で移動する。また、後で説明するように、リフトピン３２は上部位置および下部位置の中間位置に移動して基板Ｓを予備加熱位置Ｐ２に位置決め可能となっている。   The heating device 1 is provided with an elevating mechanism 30 in order to smoothly transfer the substrate S between the hot plate 20 and the transfer robot. Specifically, the bottom plate 13 and the hot plate 20 of the chamber 10 are provided with a plurality of through holes 31 extending in the vertical direction Z, and the lift pins 32 are inserted into each of the through holes 31. The lower end of each lift pin 32 is fixed to a lifting member 33. The elevating member 33 is supported by a lift pin driving unit 34 so as to be able to move up and down in the vertical direction. The lift pin drive unit 34 operates in response to a lift command from the control unit 90 to move the lift member 33 up and down. As a result, each lift pin 32 moves up and down integrally, and the lift pin 32 is positioned between an upper position where the upper end protrudes above the sphere 21 of the hot plate 20 and a lower position where the upper end is retracted below the sphere 21. Move with. Further, as will be described later, the lift pins 32 are moved to an intermediate position between the upper position and the lower position to position the substrate S at the preheating position P2.

図１はリフトピンが下部位置にある状態を示しており、この状態ではリフトピン３２の上端は基板Ｓから離間している。このため、基板Ｓは球体２１により下方から支持され、プロキシミティギャップが形成されている。こうして基板Ｓは本加熱位置Ｐ１に位置決めされる。一方、リフトピン３２が上昇すると、リフトピン３２の上端が基板Ｓの下面に当接して基板Ｓを押し上げる。これにより、基板Ｓが本加熱位置Ｐ１から上方に離れた予備加熱位置Ｐ２に位置させる。また、予備加熱位置Ｐ２からさらに上方に離れた待機位置に位置させることで搬送ロボットにより基板Ｓを受渡し可能となっている。一方、基板Ｓを支持していないリフトピン３２が上部位置まで上昇すると、搬送ロボットにより未処理の基板Ｓを待機位置に搬入することができる。こうして、搬送ロボットと加熱装置１との間での基板Ｓの受け渡しが可能となる。   FIG. 1 shows a state in which the lift pins are at the lower position. In this state, the upper ends of the lift pins 32 are separated from the substrate S. For this reason, the substrate S is supported from below by the spherical body 21, and a proximity gap is formed. Thus, the substrate S is positioned at the main heating position P1. On the other hand, when the lift pins 32 rise, the upper ends of the lift pins 32 contact the lower surface of the substrate S and push up the substrate S. As a result, the substrate S is positioned at the preliminary heating position P2 which is separated upward from the main heating position P1. Further, the substrate S can be delivered and received by the transfer robot by being located at a standby position further away from the preheating position P2. On the other hand, when the lift pins 32 that do not support the substrate S rise to the upper position, the unprocessed substrate S can be carried into the standby position by the transfer robot. Thus, the transfer of the substrate S between the transfer robot and the heating device 1 becomes possible.

本実施形態では、基板Ｓの反りを矯正して基板Ｓに対する加熱処理を均一に行うために矯正機構４０が設けられている。具体的には、ホットプレート２０の四隅部分に貫通孔４１が鉛直方向Ｚに設けられている。また、これら４つの貫通孔４１に対応してチャンバ１０の底板１３にも貫通孔４２が鉛直方向Ｚに設けられている。ホットプレート２０の各コーナーでは、貫通孔４１、４２を貫いてリフト柱４３が挿通されている。各リフト柱４３の上端には連結金具４４が取り付けられている。そして、これら４つの連結金具４４を介して額縁状（あるいは枠状）の支持部４５がホットプレート２０の上方で支持されている。一方、各リフト柱４３の下端は昇降部材４６に固定されている。この昇降部材４６はリフト柱駆動部４７により上下方向に昇降自在に支持されている。制御部９０からの昇降指令に応じてリフト柱駆動部４７が作動して昇降部材４６を昇降させる。これによって各リフト柱４３が一体的に昇降し、鉛直方向Ｚに支持部４５を移動させる。   In the present embodiment, the straightening mechanism 40 is provided to correct the warpage of the substrate S and uniformly perform the heat treatment on the substrate S. Specifically, through-holes 41 are provided at the four corners of the hot plate 20 in the vertical direction Z. Further, through holes 42 are provided in the bottom plate 13 of the chamber 10 in the vertical direction Z in correspondence with these four through holes 41. At each corner of the hot plate 20, a lift column 43 is inserted through the through holes 41 and. A connection fitting 44 is attached to the upper end of each lift pillar 43. A frame-shaped (or frame-shaped) support portion 45 is supported above the hot plate 20 via these four connection fittings 44. On the other hand, the lower end of each lift column 43 is fixed to a lifting member 46. The elevating member 46 is supported by a lift column driving unit 47 so as to be able to move up and down in the vertical direction. The lift column drive unit 47 operates in response to a lift command from the control unit 90 to move the lift member 46 up and down. As a result, each lift column 43 moves up and down integrally, and moves the support portion 45 in the vertical direction Z.

支持部４５はホットプレート２０により加熱処理される基板Ｓの上方から当該基板Ｓの上面の周縁部Ｓａ全体を臨むように配置されている。つまり、支持部４５の下面４５１（図３）は周縁部Ｓａの全周と対向している。そして、支持部４５の下面４５１から複数の矯正ピン４８が鉛直下方に垂設されている。   The support portion 45 is arranged so as to face the entire peripheral portion Sa of the upper surface of the substrate S from above the substrate S to be heated by the hot plate 20. That is, the lower surface 451 (FIG. 3) of the support portion 45 faces the entire periphery of the peripheral portion Sa. Further, a plurality of correction pins 48 extend vertically downward from the lower surface 451 of the support portion 45.

図３は支持部に対する矯正ピンの取付を説明するための図である。支持部４５には、複数（本実施形態では図２に示すように１６個）の貫通孔４５２が穿設されており、各貫通孔４５２に対して矯正ピン４８が着脱自在となっている。より具体的には、図３に示すように、矯正ピン４８の下端部４８１は鉛直下方に先細り形状で延設されている。一方、矯正ピン４８の上端部４８２は貫通孔４５２に挿脱自在な太さに仕上げられ、その外周面に雄ネジが螺刻されている。そして、２つのナット４８３、４８４を用いることで、下端部４８１を支持部４５から鉛直下方に向けて突設させた状態で矯正ピン４８は支持部４５に固定される。つまり、矯正ピン４８の上端部４８２に下側ナット４８３を螺着させた状態で矯正ピン４８の上端部４８２を貫通孔４５２に挿入して支持部４５の上面から突出させ、それに続いて突出した部分に上側ナット４８４を装着し、下側ナット４８３および上側ナット４８４とで支持部４５を挟み込むことで矯正ピン４８が支持部４５に支持される。本実施形態では、矯正ピン４８は上記のように構成されていることから、矯正ピン４８の上端部４８２に対する下側ナット４８３および上側ナット４８４の螺着位置を調整することで支持部４５に対する支持部４５の下端部４８１の垂下量ＤＲを高精度に調整可能となっている。例えば基板Ｓの反り量が比較的大きい場合には、垂下量も比較的大きくなるように調整するのが好適である。   FIG. 3 is a diagram for explaining attachment of the correction pin to the support portion. A plurality of (16 in this embodiment, as shown in FIG. 2) through holes 452 are formed in the support portion 45, and the correction pin 48 is detachably attached to each of the through holes 452. More specifically, as shown in FIG. 3, the lower end 481 of the correction pin 48 is tapered and extends vertically downward. On the other hand, the upper end 482 of the correction pin 48 is finished in a thickness that allows it to be inserted into and removed from the through hole 452, and a male screw is threaded on the outer peripheral surface. By using the two nuts 483 and 484, the correction pin 48 is fixed to the support portion 45 in a state where the lower end portion 481 is protruded vertically downward from the support portion 45. In other words, with the lower nut 483 screwed into the upper end 482 of the correction pin 48, the upper end 482 of the correction pin 48 is inserted into the through hole 452 so as to protrude from the upper surface of the support portion 45, and subsequently protrude. The corrective pin 48 is supported by the support portion 45 by attaching the upper nut 484 to the portion and sandwiching the support portion 45 between the lower nut 483 and the upper nut 484. In the present embodiment, since the straightening pin 48 is configured as described above, the screwing position of the lower nut 483 and the upper nut 484 with respect to the upper end portion 482 of the straightening pin 48 is adjusted to support the straightening pin 48 with respect to the support portion 45. The hanging amount DR of the lower end portion 481 of the portion 45 can be adjusted with high accuracy. For example, when the amount of warpage of the substrate S is relatively large, it is preferable to adjust the amount of droop to be relatively large.

なお、図１および図２では、１６個の貫通孔４５２の全てに矯正ピン４８が本発明の「矯正部材」として装着されており、それら１６本の矯正ピン４８のうち支持部４５の四隅に装着された矯正ピン４８ａが本発明の「コーナーピン」に相当している。また、全貫通孔４５２に矯正ピン４８を装着する代わりに、例えば交互に矯正ピン４８を装着するように構成してもよい。   In FIGS. 1 and 2, the correction pins 48 are mounted on all of the 16 through holes 452 as the “correction member” of the present invention, and at the four corners of the support portion 45 among the 16 correction pins 48. The mounted correction pin 48a corresponds to the "corner pin" of the present invention. Further, instead of mounting the correction pins 48 in all the through holes 452, for example, the correction pins 48 may be mounted alternately.

このように矯正ピン４８を支持部４５に装着した状態で制御部９０から上下移動指令が与えられると、昇降部材４６がＺ方向に昇降して矯正ピン４８を一括して鉛直方向に移動させる。これによって基板Ｓの反りを矯正することが可能となっている。この点を含めて加熱装置１で実行される加熱処理について、図４および図５を参照しつつ説明する。   When the vertical movement command is given from the control unit 90 in a state where the correction pin 48 is mounted on the support unit 45 in this manner, the elevating member 46 moves up and down in the Z direction to move the correction pin 48 in the vertical direction at once. This makes it possible to correct the warpage of the substrate S. The heating process performed by the heating device 1 including this point will be described with reference to FIGS. 4 and 5.

図４は図１に示す加熱装置による加熱動作を示すフローチャートである。また、図５は加熱動作の主要工程を模式的に示す図である。この加熱処理は、制御部９０が予め準備された制御プログラムを実行し装置各部に所定の動作を行わせることにより実現される。最初に、加熱装置１の各部が基板Ｓを受け入れるための初期状態に初期化される。初期状態においては、シャッタ１４は閉じられ、ホットプレート２０は基板Ｓを加熱するための所定温度に昇温される。そして、この状態から基板Ｓがチャンバ１０内に搬入される。すなわち、この基板搬入時点では、リフトピン３２が上部位置に位置決めされるとともに当該リフトピン３２よりも十分に高い位置（退避位置）に矯正ピン４８は位置決めされている。そして、シャッタ１４が開かれることにより、外部から基板Ｓの搬入を受け入れることができる状態になる。この状態で、外部の搬送ロボットにより基板Ｓがチャンバ１０内に搬入され、基板Ｓは搬送ロボットからリフトピン３２に受け渡される（ステップＳ１）。   FIG. 4 is a flowchart showing a heating operation by the heating device shown in FIG. FIG. 5 is a diagram schematically showing main steps of the heating operation. This heating process is realized by the control unit 90 executing a control program prepared in advance and causing each unit of the apparatus to perform a predetermined operation. First, each part of the heating device 1 is initialized to an initial state for receiving the substrate S. In the initial state, the shutter 14 is closed, and the hot plate 20 is heated to a predetermined temperature for heating the substrate S. Then, the substrate S is carried into the chamber 10 from this state. That is, at the time of loading the substrate, the lift pin 32 is positioned at the upper position, and the correction pin 48 is positioned at a position (retreat position) sufficiently higher than the lift pin 32. Then, when the shutter 14 is opened, a state in which the loading of the substrate S can be received from the outside is attained. In this state, the substrate S is carried into the chamber 10 by the external transfer robot, and the substrate S is transferred from the transfer robot to the lift pins 32 (Step S1).

こうして、加熱処理前の基板Ｓは待機位置でリフトピン３２に支持されながら加熱処理の開始を待っており、搬送ロボットの退避後、シャッタ１４が閉じられると、リフトピン３２が所定距離だけ下降し、図５の「Ｓ２時点」の欄に示すように、基板Ｓを予備加熱位置Ｐ２に位置決めする（ステップＳ２）。この「予備加熱位置」は、鉛直方向において、上記したように基板Ｓの受渡しを行う位置と本加熱位置Ｐ１との中間位置であり、この位置決めによって鉛直方向Ｚにおける基板Ｓの上面の高さ位置は予備加熱位置Ｐ２と一致している。   Thus, the substrate S before the heat treatment is waiting for the start of the heat treatment while being supported by the lift pins 32 at the standby position. When the shutter 14 is closed after the retreat of the transfer robot, the lift pins 32 are lowered by a predetermined distance. 5, the substrate S is positioned at the preheating position P2 (step S2). This “preliminary heating position” is an intermediate position between the position where the substrate S is transferred and the main heating position P1 in the vertical direction as described above, and the height position of the upper surface of the substrate S in the vertical direction Z Corresponds to the preheating position P2.

次に、基板Ｓを予備加熱位置Ｐ２に位置させたまま基板Ｓと矯正ピン４８との距離Ｄａを算出し、その距離Ｄａだけ支持部４５が矯正ピン４８とともに鉛直下方に移動する。これによって、矯正ピン４８の下端部４８１の先端が予備加熱位置Ｐ２に位置する（ステップＳ３）。ここで、基板Ｓが凹状（あるいは「谷状」ということもある）に反っている、つまり基板Ｓの周縁部Ｓａが同欄の左側図面において点線で示すように上方に反っている場合、この周縁部Ｓａは矯正ピン４８の移動中に矯正ピン４８の下端部４８１により鉛直下方に押し付けられ、予備加熱位置Ｐ２に位置決めされる。こうして、矯正ピン４８による反りの矯正が行われる。一方、基板Ｓが凸状（あるいは「山状」ということもある）に反っている、つまり基板Ｓの周縁部Ｓａが同欄の右側図面において実線で示すように下方にお辞儀している場合、矯正ピン４８は基板Ｓの周縁部Ｓａと接触していない状態で予備加熱位置Ｐ２に位置決めされている。   Next, the distance Da between the substrate S and the correction pin 48 is calculated while the substrate S is located at the preheating position P2, and the support portion 45 moves vertically downward together with the correction pin 48 by the distance Da. Thereby, the tip of the lower end portion 481 of the correction pin 48 is located at the preheating position P2 (step S3). Here, when the substrate S is warped in a concave shape (or sometimes referred to as a “valley shape”), that is, when the peripheral portion Sa of the substrate S is warped upward as shown by a dotted line in the left drawing in the same column, The peripheral edge portion Sa is pressed vertically downward by the lower end portion 481 of the correction pin 48 during the movement of the correction pin 48, and is positioned at the preheating position P2. Thus, the correction of the warp by the correction pin 48 is performed. On the other hand, when the substrate S is warped in a convex shape (or sometimes referred to as a “mountain shape”), that is, when the peripheral portion Sa of the substrate S bows downward as shown by a solid line in the right drawing in the same column, The correction pin 48 is positioned at the preheating position P2 in a state where the correction pin 48 is not in contact with the peripheral portion Sa of the substrate S.

また、本実施形態では、基板Ｓおよび矯正ピン４８を予備加熱位置Ｐ２に位置させたままの状態、つまり矯正ピン４８により基板Ｓの周縁部Ｓａの反りを矯正した状態を所定時間だけ保持する（ステップＳ４）。この保持中に予備加熱処理が実行される。この加熱処理中においては、多くの場合、ホットプレート２０の上面からの輻射熱によって基板Ｓの下面の温度が高くなり、基板Ｓの周縁部Ｓａは上方に反ろうとする。しかしながら、図５の「予備加熱」の欄に示すように、矯正ピン４８が予備加熱位置Ｐ２に位置した状態で加熱処理が実行される。したがって、同欄の右側図面において点線で示すように、加熱処理の開始当初において下方に反った状態であった周縁部Ｓａは加熱処理に伴って上方に反ってくるが、予備加熱位置Ｐ２まで反った時点で矯正ピン４８の下端部４８１に当接し、予備加熱位置Ｐ２に位置決めされる。また、それ以降も予備加熱位置Ｐ２に留め置かれる。一方、同欄の左側図面で示すように、矯正ピン４８に当接して予備加熱位置Ｐ２に位置決めされている周縁部Ｓａはそのまま矯正ピン４８により予備加熱位置Ｐ２に留め置かれる。   Further, in the present embodiment, a state in which the substrate S and the correction pins 48 are kept at the preheating position P2, that is, a state in which the warp of the peripheral portion Sa of the substrate S is corrected by the correction pins 48 is held for a predetermined time ( Step S4). A preheating process is performed during this holding. During this heat treatment, in many cases, the temperature of the lower surface of the substrate S increases due to radiant heat from the upper surface of the hot plate 20, and the peripheral portion Sa of the substrate S tends to warp upward. However, as shown in the column of "preliminary heating" in FIG. 5, the heating process is performed in a state where the correction pin 48 is located at the preliminary heating position P2. Therefore, as shown by the dotted line in the right-hand drawing in the same column, the peripheral edge portion Sa that was warped downward at the beginning of the heating process warps upward due to the heating process, but warps to the preheating position P2. At this point, it comes into contact with the lower end 481 of the correction pin 48 and is positioned at the preheating position P2. After that, it is kept at the preheating position P2. On the other hand, as shown in the left drawing in the same column, the peripheral edge portion Sa which is in contact with the correction pin 48 and is positioned at the pre-heating position P2 is kept at the pre-heating position P2 by the correction pin 48 as it is.

こうして矯正ピン４８による反りの矯正を行いながら予備加熱が完了する（ステップＳ４で「ＹＥＳ」）と、リフトピン３２が下部位置へ下降する。これにより基板Ｓはリフトピン３２からホットプレート２０の球体２１に受け渡され、基板Ｓは本加熱位置Ｐ１に位置決めされる。また、矯正ピン４８による基板Ｓの反り矯正を継続したまま支持部４５がリフトピン３２の下降と同期して下降して矯正ピン４８を本加熱位置Ｐ１に位置決めする（ステップＳ５）。この時点より本加熱処理が開始される。この本加熱処理は所定時間が経過するまで実行される（ステップＳ６）。   When the preliminary heating is completed while correcting the warpage by the correction pins 48 ("YES" in step S4), the lift pins 32 are lowered to the lower position. Thus, the substrate S is transferred from the lift pins 32 to the sphere 21 of the hot plate 20, and the substrate S is positioned at the main heating position P1. Further, while the warp correction of the substrate S by the correction pins 48 is continued, the support portion 45 moves down in synchronization with the lowering of the lift pins 32 to position the correction pins 48 at the main heating position P1 (step S5). From this point, the main heat treatment is started. This main heating process is performed until a predetermined time elapses (step S6).

この本加熱処理中においても、予備加熱処理中と同様に、矯正ピン４８の存在によって基板Ｓの周縁部Ｓａが本加熱位置Ｐ１に位置決めされた状態で本加熱処理が実行される。そして、本加熱処理が完了する（ステップＳ６で「ＹＥＳ」）と、支持部４５は図５の「Ｓ２時点」の欄に図示された位置に移動して矯正ピン４８を待機位置（基板Ｓの受渡位置）よりも上方の位置、つまり上記退避位置に位置させる（ステップＳ７）。それに続いて、基板Ｓは外部へアンローディングされる（ステップＳ８）。すなわち、リフトピン３２が上昇することで基板Ｓをホットプレート２０から離間させ、シャッタ１４が開いて搬送ロボットを進入させることにより、リフトピン３２から搬送ロボットへ基板Ｓが受け渡されて搬出される。   Even during the main heating process, as in the preliminary heating process, the main heating process is performed in a state where the peripheral edge Sa of the substrate S is positioned at the main heating position P1 due to the presence of the correction pins 48. When the main heating process is completed (“YES” in step S6), the support unit 45 moves to the position illustrated in the column of “time point S2” in FIG. (The delivery position), that is, the retreat position (step S7). Subsequently, the substrate S is unloaded to the outside (step S8). That is, the substrate S is separated from the hot plate 20 by raising the lift pins 32, and the shutter 14 is opened to allow the transfer robot to enter, so that the substrates S are transferred from the lift pins 32 to the transfer robot and unloaded.

以上のように、本実施形態によれば、矯正ピン４８は基板Ｓの上面の周縁部Ｓａに対して当接可能に設けられている。そして、加熱処理（予備加熱処理および本加熱処理）において、矯正ピン４８は加熱位置（予備加熱位置Ｐ２および本加熱位置Ｐ１）に位置決めされた基板Ｓの四辺の近傍で当該加熱位置に位置している。このため、基板Ｓの全周縁部Ｓａまたは一部が予備加熱前から既に反っていたとしても、矯正ピン４８に当接して予備加熱位置Ｐ２に矯正することができる。また、基板Ｓの加熱中に基板Ｓの周縁部が加熱位置よりも上方に反ろうとしても、矯正ピン４８への当接によって反りを規制することができる。その結果、基板Ｓの面内において加熱処理を均一に行うことができる。   As described above, according to the present embodiment, the correction pin 48 is provided so as to be able to abut on the peripheral portion Sa on the upper surface of the substrate S. In the heating process (preliminary heating process and main heating process), the straightening pin 48 is located at the heating position near the four sides of the substrate S positioned at the heating position (preliminary heating position P2 and main heating position P1). I have. Therefore, even if the entire peripheral edge Sa or a part of the substrate S has already warped before the preheating, the substrate S can be brought into contact with the correction pin 48 and corrected to the preheating position P2. Further, even if the peripheral portion of the substrate S attempts to warp upward from the heating position during the heating of the substrate S, the warpage can be regulated by contact with the correction pins 48. As a result, the heat treatment can be performed uniformly in the plane of the substrate S.

その効果を実証するために、縦５１０×横５１０×厚み１．１ｍｍのガラス基板を、図１の加熱装置１から矯正機構４０を除外した装置と図１に示す加熱装置１とで１１０℃に加熱したところ、それぞれ図６および図７に示す実験結果が得られた。図６は矯正機構を有さない加熱装置で加熱処理を行った場合の温度特性を示すグラフであり、図７は本実施形態に係る加熱装置で加熱処理を行った場合の温度特性を示すグラフである。これらのグラフにおいて、横軸は加熱時間を示し、縦軸は基板Ｓの上面中央および四隅に取り付けれた温度センサによる計測温度を示している。また、これらのグラフ中、点線は基板Ｓの上面中央の温度変化を示し、その他は基板Ｓの上面四隅の温度変化を示している。これらのグラフから明らかなように矯正機構４０を設けたことで優れた温度均一性が得られる。   In order to demonstrate the effect, a glass substrate of 510 × 510 × 1.1 mm was heated to 110 ° C. by using the heating device 1 of FIG. 1 without the straightening mechanism 40 and the heating device 1 of FIG. When heated, the experimental results shown in FIGS. 6 and 7, respectively, were obtained. FIG. 6 is a graph showing a temperature characteristic when a heating process is performed by a heating device having no correction mechanism, and FIG. 7 is a graph showing a temperature characteristic when a heating process is performed by the heating device according to the present embodiment. It is. In these graphs, the horizontal axis indicates the heating time, and the vertical axis indicates the temperature measured by the temperature sensors attached to the center and four corners of the upper surface of the substrate S. In these graphs, the dotted line indicates a temperature change at the center of the upper surface of the substrate S, and the others indicate temperature changes at four corners of the upper surface of the substrate S. As is clear from these graphs, the provision of the correction mechanism 40 provides excellent temperature uniformity.

また、本実施形態によれば、基板Ｓの上面に対して矯正ピン４８が鉛直下方に当接することにより基板Ｓの姿勢を制御しつつ当該基板Ｓをホットプレート２０により加熱することができる。したがって、基板の端面と傾斜面とが擦れ合う従来技術（特許文献１に記載の発明）に比べ、パーティクルの発生を抑制することができ、清浄な雰囲気で基板Ｓを加熱することができる。また、従来技術よりも最大矯正量を高めることができる。   Further, according to the present embodiment, the substrate S can be heated by the hot plate 20 while controlling the posture of the substrate S by the correction pins 48 abutting vertically on the upper surface of the substrate S. Therefore, the generation of particles can be suppressed, and the substrate S can be heated in a clean atmosphere, as compared with the related art in which the end surface of the substrate and the inclined surface are rubbed. Further, the maximum correction amount can be increased as compared with the related art.

このような実施形態では、本加熱位置Ｐ１および予備加熱位置Ｐ２が本発明の「加熱位置」の一例に相当している。また、矯正ピン４８が本発明の「矯正部材」の一例に相当している。また、リフト柱４３、昇降部材４６およびリフト柱駆動部４７が本発明の「移動機構」として機能している。   In such an embodiment, the main heating position P1 and the preliminary heating position P2 correspond to an example of the “heating position” of the present invention. The correction pin 48 corresponds to an example of the “correction member” of the present invention. In addition, the lift column 43, the lifting member 46, and the lift column drive unit 47 function as the "moving mechanism" of the present invention.

なお、本発明は上記した実施形態に限定されるものではなく、その趣旨を逸脱しない限りにおいて上述したもの以外に種々の変更を行うことが可能である。例えば上記実施形態では、額縁状の支持部４５に対して１６本の矯正ピン４８を装着しているが、矯正ピン４８の本数はこれに限定されるものではなく、基板Ｓのサイズや形状などに応じて適宜変更可能である。また、支持部４５の構成については、例えば図８や図９に示すように、複数の支持部材４５Ａ〜４５Ｄを組み合わせたものを用いてもよい（第２実施形態、第３実施形態）。また、支持部材４５Ａ〜４５Ｄを一括して鉛直方向Ｚに移動させるように構成してもよいし、支持部材４５Ａ〜４５Ｄを個々に鉛直方向Ｚに移動させるように構成してもよい。   The present invention is not limited to the above-described embodiment, and various changes other than those described above can be made without departing from the gist of the present invention. For example, in the above embodiment, 16 correction pins 48 are mounted on the frame-shaped support portion 45, but the number of correction pins 48 is not limited to this, and the size and shape of the substrate S Can be changed as needed. In addition, as for the configuration of the support portion 45, a combination of a plurality of support members 45A to 45D may be used as shown in FIGS. 8 and 9 (second and third embodiments). Further, the support members 45A to 45D may be configured to be moved collectively in the vertical direction Z, or the support members 45A to 45D may be configured to be individually moved in the vertical direction Z.

また、上記実施形態では、複数の矯正ピン４８により基板Ｓの上面の周縁部Ｓａを基板Ｓの四辺に沿って離散的に押さえ付けて基板Ｓの反りを矯正しているが、図１０に示すように基板Ｓの辺部に沿って延設されるとともに延設方向と直交する面内において下端部が先細り形状に仕上げられた矯正ブロック４９を用いてもよい（第４実施形態）。この場合、基板Ｓの上面の周縁部Ｓａを基板Ｓの辺部に沿って連続的に押さえ付けて基板Ｓの反りを矯正することができる。なお、同図中の符号４９１は矯正ブロック４９を支持部４５に取り付けるための軸部である。   In the above embodiment, the warp of the substrate S is corrected by pressing the peripheral portion Sa of the upper surface of the substrate S discretely along the four sides of the substrate S by the plurality of correction pins 48, as shown in FIG. As described above, the correction block 49 that extends along the side of the substrate S and that has a lower end tapered in a plane perpendicular to the extending direction may be used (fourth embodiment). In this case, the peripheral portion Sa of the upper surface of the substrate S can be continuously pressed down along the side of the substrate S, and the warpage of the substrate S can be corrected. Note that reference numeral 491 in the figure is a shaft portion for attaching the correction block 49 to the support portion 45.

また、上記実施形態では、矯正部材（矯正ピン４８や矯正ブロック４９）の下端部を鋭利に仕上げ、基板Ｓの上面の周縁部Ｓａと点接触あるいは線接触させているが、下端部の形状はこれに限定されるものではない。例えば図１１に示すように、矯正ブロック４９の下端部を一定幅Ｗを有する当接面４９２に仕上げてもよく、この場合、矯正ブロック４９は基板Ｓの上面の周縁部Ｓａと面接触しながら基板Ｓの周縁部Ｓａの反りを矯正することができる（第５実施形態）。   In the above-described embodiment, the lower end of the correction member (the correction pin 48 or the correction block 49) is sharply finished to make point contact or line contact with the peripheral edge Sa of the upper surface of the substrate S. It is not limited to this. For example, as shown in FIG. 11, the lower end of the correction block 49 may be finished to a contact surface 492 having a constant width W. In this case, the correction block 49 is in surface contact with the peripheral edge Sa of the upper surface of the substrate S. The warpage of the peripheral portion Sa of the substrate S can be corrected (fifth embodiment).

また、上記実施形態では、昇降機構３０による基板Ｓの昇降から独立して、各矯正ピン４８を鉛直方向Ｚに移動させるために移動機構（リフト柱４３、昇降部材４６およびリフト柱駆動部４７）が設けられているが、昇降機構３０が基板Ｓの昇降と同期して矯正ピン４８を鉛直方向Ｚに移動させるように構成してもよい。この場合、移動機構が不要となり、装置構成の簡素化およびコスト低減を図ることができる。   In the above-described embodiment, the moving mechanism (lift column 43, lifting member 46, and lift column driving unit 47) moves the correction pins 48 in the vertical direction Z independently of the lifting and lowering of the substrate S by the lifting mechanism 30. However, the lifting mechanism 30 may be configured to move the correction pin 48 in the vertical direction Z in synchronization with the lifting and lowering of the substrate S. In this case, a moving mechanism is not required, so that the device configuration can be simplified and the cost can be reduced.

また、上記実施形態では、プロキシミティギャップを介して加熱処理を行う加熱装置に本発明を適用しているが、ホットプレート２０の上面に基板Ｓを直接載置して加熱処理を行う加熱装置や加熱処理時に基板の下面を吸着して加熱処理を行う加熱装置（例えば特開２００６−３１９０９３号公報）等にも本発明を適用することができる。   Further, in the above embodiment, the present invention is applied to the heating device that performs the heating process through the proximity gap. However, the heating device that performs the heating process by directly mounting the substrate S on the upper surface of the hot plate 20 or the like. The present invention can also be applied to a heating device (for example, Japanese Patent Application Laid-Open No. 2006-319093) that performs a heat treatment by adsorbing the lower surface of the substrate during the heat treatment.

また、上記実施形態では、加熱処理として予備加熱と本加熱とを実行しているが、本加熱のみを実行する加熱装置に対しても本発明を適用することができる。   Further, in the above embodiment, the preliminary heating and the main heating are executed as the heat treatment, but the present invention can be applied to a heating device that executes only the main heating.

この発明は、矩形状の基板を下方から加熱する加熱技術全般に適用することができる。   INDUSTRIAL APPLICABILITY The present invention can be applied to all heating techniques for heating a rectangular substrate from below.

１…加熱装置
２０…ホットプレート
３０…昇降機構
３２…リフトピン
３３，４６…昇降部材
３４…リフトピン駆動部
４０…矯正機構
４３…リフト柱
４４…連結金具
４５…支持部
４５Ａ〜４５Ｄ…支持部材
４７…リフト柱駆動部
４８，４８ａ…矯正ピン（矯正部材）
４９…矯正ブロック（矯正部材）
Ｐ１…本加熱位置（加熱位置）
Ｐ２…予備加熱位置（加熱位置）
Ｓ…基板
Ｚ…鉛直方向
DESCRIPTION OF SYMBOLS 1 ... Heating apparatus 20 ... Hot plate 30 ... Elevating mechanism 32 ... Lift pin 33, 46 ... Elevating member 34 ... Lift pin drive part 40 ... Straightening mechanism 43 ... Lift pillar 44 ... Connection metal fitting 45 ... Supporting parts 45A-45D ... Supporting member 47 ... Lift column drive 48, 48a ... straightening pin (straightening member)
49… Correcting block (Correcting member)
P1 ... Main heating position (heating position)
P2: Preheating position (heating position)
S: substrate Z: vertical direction

Claims (9)

加熱位置に位置決めされる矩形状の基板を下方から加熱するホットプレートと、
前記ホットプレートに対して前記基板を鉛直方向において前記加熱位置よりも高い待機位置と前記加熱位置との間で昇降させる昇降機構と、
前記基板の上面の周縁部に対して当接可能な矯正部材を有する矯正機構とを備え、
前記矯正機構は、前記加熱位置に位置決めされた前記基板の四辺の近傍で前記矯正部材を前記加熱位置に位置させることで、前記ホットプレートによる前記基板の加熱前に前記基板のうち上方へ反っている前記周縁部を前記加熱位置に矯正し、前記基板の加熱中に前記基板の周縁部が前記加熱位置よりも上方に反るのを規制して前記ホットプレートにより加熱される前記基板の姿勢を制御する
ことを特徴とする加熱装置。 A hot plate for heating a rectangular substrate positioned at the heating position from below,
An elevating mechanism for elevating the substrate between the heating position and a standby position higher than the heating position in the vertical direction with respect to the hot plate,
A correction mechanism having a correction member capable of abutting against a peripheral portion of the upper surface of the substrate,
The straightening mechanism, by positioning the straightening member at the heating position in the vicinity of the four sides of the substrate positioned at the heating position, warped upward of the substrate before heating the substrate by the hot plate Correcting the peripheral edge of the substrate to the heating position, restricting the peripheral edge of the substrate from warping upward from the heating position during heating of the substrate, and controlling the posture of the substrate heated by the hot plate. A heating device characterized by controlling. 請求項１に記載の加熱装置であって、
前記矯正部材は下端部を先細り形状に仕上げた矯正ピンであり、
前記矯正機構は、前記矯正ピンを複数個有し、各矯正ピンの前記下端部を前記基板の上面の周縁部に点接触させて前記基板の姿勢を制御する加熱装置。 The heating device according to claim 1,
The straightening member is a straightening pin having a tapered bottom end.
The heating device, wherein the correction mechanism has a plurality of the correction pins, and controls a posture of the substrate by bringing the lower end of each correction pin into point contact with a peripheral edge of an upper surface of the substrate. 請求項２に記載の加熱装置であって、
前記複数の矯正ピンのうちの４本はそれぞれ前記基板の上面の四隅と点接触可能に設けられたコーナーピンである加熱装置。 The heating device according to claim 2,
A heating device wherein four of the plurality of correction pins are corner pins provided so as to be able to make point contact with four corners of the upper surface of the substrate. 請求項２に記載の加熱装置であって、
前記矯正機構は、前記複数の矯正ピンの上端部を支持する支持部を有し、前記加熱位置に位置決めされた前記基板を前記ホットプレートにより加熱する前に前記複数の矯正ピンを支持したまま前記支持部を前記鉛直方向に移動させて各矯正ピンの前記下端部を前記加熱位置に位置させる加熱装置。 The heating device according to claim 2,
The straightening mechanism has a support portion that supports an upper end of the plurality of straightening pins, and while the substrate positioned at the heating position is heated by the hot plate while supporting the plurality of straightening pins, A heating device for moving a support portion in the vertical direction to position the lower end of each correction pin at the heating position. 請求項４に記載の加熱装置であって、
前記基板の昇降から独立して、各矯正ピンの前記下端部を前記加熱位置に位置させる下方位置と、各矯正ピンの前記下端部を前記加熱位置よりも高い位置に引き上げた上方位置との間で前記支持部を移動させる移動機構を備える加熱装置。 The heating device according to claim 4,
Independently from elevating the substrate, between a lower position where the lower end of each correction pin is located at the heating position and an upper position where the lower end of each correction pin is raised to a position higher than the heating position. A heating device provided with a moving mechanism for moving the support portion. 請求項４に記載の加熱装置であって、
前記昇降機構は、前記基板の昇降と同期して、各矯正ピンの前記下端部を前記加熱位置に位置させる下方位置と、各矯正ピンの前記下端部を前記加熱位置よりも高い位置に引き上げた上方位置との間で移動させる加熱装置。 The heating device according to claim 4,
The elevating mechanism synchronizes with the elevating of the substrate, and lowers the lower end of each correction pin to the heating position, and raises the lower end of each correction pin to a position higher than the heating position. A heating device that moves between an upper position. 請求項４ないし６のいずれか一項に記載の加熱装置であって、
前記複数の矯正ピンはそれぞれ独立して前記支持部に対して着脱自在である加熱装置。 The heating device according to any one of claims 4 to 6, wherein
The heating device, wherein the plurality of correction pins are independently detachable from the support portion. 請求項７に記載の加熱装置であって、
前記矯正ピン毎に鉛直方向における前記支持部への前記矯正ピンの装着を調整可能である加熱装置。 The heating device according to claim 7,
A heating device capable of adjusting the mounting of the correction pin on the support portion in the vertical direction for each correction pin. ホットプレートに対して矩形状の基板を所定の加熱位置に位置決めする工程と、
前記基板の上面の周縁部に対して当接可能な矯正部材を前記加熱位置よりも高い位置から前記加熱位置に位置決めされた前記基板に向けて下降させ、前記基板の四辺の近傍で前記矯正部材を前記加熱位置に位置決めし、前記矯正部材の下降中に前記基板のうち上方へ反っている前記周縁部を前記加熱位置に矯正する工程と、
前記矯正部材を前記加熱位置に位置決めした状態のまま前記ホットプレートにより前記基板を加熱するとともに前記基板の加熱中に前記基板の周縁部が前記加熱位置よりも上方に反るのを規制する工程と
を備えることを特徴とする加熱方法。 Positioning the rectangular substrate at a predetermined heating position with respect to the hot plate;
A correction member that can be brought into contact with a peripheral portion of the upper surface of the substrate is lowered from a position higher than the heating position toward the substrate positioned at the heating position, and the correction member is positioned near four sides of the substrate. Positioning the heating position, the step of correcting the peripheral portion of the substrate that is warped upward during the descent of the correction member to the heating position,
Heating the substrate by the hot plate with the straightening member positioned at the heating position and regulating the peripheral edge of the substrate from warping above the heating position while heating the substrate; and A heating method comprising:
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