JP2020043327A - Light-emitting device - Google Patents

Abstract

To realize a light-emitting device that suppresses the spread of light.SOLUTION: A light-emitting device includes a base having a bottom, a first semiconductor laser element disposed on the bottom of the base, and a first light reflecting member disposed on the bottom of the base and having a light reflecting surface for reflecting light emitted from the first semiconductor laser element, and the light reflecting surface of the first light reflecting member has a curved shape in which the divergence angle of the light reflected on the light reflection surface is made smaller than the divergence angle of the light applied to the light reflection surface for the main part light emitted from the first semiconductor laser element, and the divergence angle of the light reflected by the light reflecting surface is not made to 0 degrees.SELECTED DRAWING: Figure 6

Description

  The present invention relates to a light emitting device.

  Conventionally, it is known that a lens is used when condensing, diffusing, or collimating light emitted from a light emitting element. Further, a mirror can be interposed before the light reaches the lens. For example, Patent Literature 1 has an optical system in which light emitted from a semiconductor laser element is reflected by a light source apparatus having a plurality of semiconductor laser elements and a plurality of prisms and is incident on a lens disposed above the light source apparatus. A projector is disclosed. By interposing a light reflecting member such as a mirror or a prism in a limited package size, the optical path length to reach the lens can be lengthened.

JP-A-2017-212390

  However, when the light path length is increased by interposing a light reflecting member as in the light source device disclosed in Patent Literature 1, light spreads.

  A light emitting device according to an embodiment of the present disclosure includes a base having a bottom, a first semiconductor laser element disposed on the bottom of the base, and a first semiconductor laser disposed on the bottom of the base. A first light reflecting member having a light reflecting surface for reflecting light emitted from the element, wherein the light reflecting surface of the first light reflecting member is a main portion of the main part emitted from the first semiconductor laser element. Regarding the light, the divergence angle of the light reflected on the light reflection surface is smaller than the divergence angle of the light applied to the light reflection surface, and the divergence angle of the light reflected on the light reflection surface is 0 degree. It has a curved surface shape.

  According to the present disclosure, a light emitting device in which the spread of light is reduced can be provided.

FIG. 1 is a perspective view of the light emitting device according to the first embodiment. FIG. 2 is a perspective view of the light emitting device according to the first embodiment viewed from the same direction as FIG. 1 with a part of its configuration removed. FIG. 3 is a top view of the light emitting device according to the first embodiment. FIG. 4 is a top view of the light emitting device according to the first embodiment corresponding to FIG. FIG. 5 is a cross-sectional view of the light emitting device according to the first embodiment along a line connecting V-V in FIG. FIG. 6 is a cross-sectional view of the light emitting device according to the first embodiment along a straight line connecting VI-VI in FIG. FIG. 7 is a schematic diagram illustrating light of a main part emitted from the first semiconductor laser element and the second semiconductor laser element of the light emitting device according to the first embodiment. FIG. 8 is a diagram for explaining a traveling path of light until light emitted from the second semiconductor laser element of the light emitting device according to the first embodiment is emitted from the lens member. FIG. 9 is a diagram for explaining a traveling path of light until light emitted from the first semiconductor laser element of the light emitting device according to the first embodiment is emitted from the lens member. FIG. 10 is a diagram illustrating the light reflecting surface of the first light reflecting member when the distance until the center light from the first and second semiconductor laser elements is irradiated on the light reflecting surface is adjusted. FIG. 11 is a diagram for explaining an example of conditions satisfied by the arrangement of the first semiconductor laser element and the shape of the light reflecting surface of the first light reflecting member. FIG. 12 is a perspective view of a light emitting device according to the second embodiment. FIG. 13 is a top view of the light emitting device according to the second embodiment. FIG. 14 is a cross-sectional view of the light emitting device according to the second embodiment taken along a line connecting XIV-XIV in FIG. FIG. 15 is a perspective view of a light emitting device according to the third embodiment. FIG. 16 is a top view of the light emitting device according to the third embodiment. FIG. 17 is a cross-sectional view of the light emitting device according to the third embodiment taken along a line connecting XVII-XVII in FIG.

  Embodiments for carrying out the present invention will be described below with reference to the drawings. However, the embodiments described below are for embodying the technical idea of the present invention, and do not limit the present invention. Further, in the following description, the same names and reference numerals denote the same or similar members, and a detailed description thereof will be omitted as appropriate. In addition, the size, positional relationship, and the like of the members illustrated in each drawing may be exaggerated for clarity of description.

<First embodiment>
1 to 6 are views for explaining the structure of the light emitting device 1 according to the first embodiment. FIG. 1 is a perspective view of the light emitting device 1 as viewed from a side from which light is emitted. FIG. 2 is a perspective view of the light emitting device 1 in a state where a part of the configuration is removed and a space where the semiconductor laser element is arranged is visualized, as viewed from the same direction as FIG. FIG. 3 is a top view of the light emitting device 1 shown in FIG. 1 when the side from which light is emitted is the top surface. FIG. 4 is a top view of the light emitting device 1 shown in FIG. 2 when the side from which light is emitted is the top surface. FIG. 5 is a cross-sectional view of the light emitting device 1 taken along a straight line connecting VV in FIG. FIG. 6 is a cross-sectional view of the light emitting device 1 taken along a line connecting VI-VI in FIG. In addition, in order not to complicate the drawing, a drawing of the light emitting device 1 including wires is shown in FIG. 4, and is omitted in other drawings.

  The constituent elements of the light emitting device 1 include a base 10, one first semiconductor laser element 20, two second semiconductor laser elements 30, a submount 40, a first light reflecting member 50, a second light reflecting member 60, and a lid. It has a member 70, a lens member 80, a bonding part 90, and a wire 91. Note that the lens member 80 may be provided in another device instead of the light emitting device 1.

  Further, the first and second semiconductor laser elements may be constituted only by the first semiconductor laser element 20. When the second semiconductor laser element 30 is not provided, the second light reflecting member 60 may not be provided. Further, a plurality of first semiconductor laser elements 20 may be provided. Similarly, one or more second semiconductor laser elements 30 may be provided. Depending on the material and structure of the base 10, it is possible to mount without providing the submount 40.

Next, each component will be described.
The base 10 has a bottom forming the bottom surface of the base 10 and a frame forming the side of the base 10. Further, the frame portion has an inner surface IS, and a concave structure in which a central portion is recessed is formed in the base 10 by the inner surface IS and the upper surface US of the bottom. A step ST is provided on a part of the inner surface of the frame. Note that the step ST may be provided over the entire inner side surface. A metal film is provided on the upper surface of the step.

  The base 10 can be formed using ceramic as a main material. In addition, you may form not only with a ceramic but with a metal. The main material of the base 10 is, for example, aluminum nitride, silicon nitride, aluminum oxide, or silicon carbide in ceramics, copper, aluminum, iron in metal, copper molybdenum, copper-diamond composite material, or copper tungsten in composite material. Can be used. Alternatively, the base and the base may be formed by forming the bottom and the frame as separate members having different main materials, respectively, and joining the bottom and the frame. For example, a case may be considered in which different metals are used for the main material of the bottom portion and the frame portion, or a case where a bottom portion made of metal as the main material and a frame portion made of ceramic as the main material are used.

The first semiconductor laser device 20 and the second semiconductor laser device 30 emit laser light. The laser light emitted from these semiconductor laser elements has a spread, and forms an elliptical far-field pattern (hereinafter, referred to as “FFP”) on a plane parallel to the light emitting end face. The FFP is specified from the light intensity distribution of light on a plane that is separated from the light emitting end face to some extent and that is parallel to the light emitting end face. The shape of the FFP can be specified as a region where light having an intensity of 1 / e ² or more with respect to the peak intensity value is distributed. The light that forms the shape of the FFP is referred to as light of a main part.

  FIG. 7 is a schematic diagram illustrating light of a main part emitted from the first semiconductor laser element 20 and the second semiconductor laser element 30 of the light emitting device 1. Note that only a part of the light emitting device 1 necessary for the description is shown. As shown in FIG. 7, the shape of the FFP is an elliptical shape in which the length in the stacking direction of the plurality of semiconductor layers including the active layer is longer than the length in the direction perpendicular thereto. In this specification, the spread of light in the direction corresponding to the major axis of the elliptical shape is defined as the spread in the vertical direction, and the spread of light in the direction corresponding to the minor axis is defined as the spread in the horizontal direction.

  Also, in the space where the light of the main part is radiated, the half value of the angle formed by the light traveling through both ends of the major axis of the ellipse from the light emitting end face is called the vertical divergence angle of the light, and from the light emitting end face. The half value of the angle formed by light traveling at both ends of the minor axis of the ellipse is defined as the horizontal spread angle of the light. Based on FIG. 7, the vertical divergence angle of the first and second semiconductor laser elements is θ1 / 2, and the horizontal divergence angle is θ2 / 2. Regarding the divergence angles of the light emitted from the first and second semiconductor laser elements 20 and 30, it can be said that the divergence angle in the vertical direction is larger than the divergence angle in the horizontal direction.

  The light emitted from the first semiconductor laser element 20 has a larger divergence angle in the vertical direction than the light emitted from the second semiconductor laser element 30. In addition, although it depends on the spread angle of the semiconductor laser element to be used, in order to effectively apply the light emitting device 1 of the first embodiment, the distance between the first semiconductor laser element 20 and the second semiconductor laser element 30 It is preferable that the condition that the laser beam emitted from the first semiconductor laser element 20 has a divergence angle in the vertical direction larger by 10 degrees or more is satisfied. The difference in the vertical divergence angle of the laser light between the first semiconductor laser element 20 and the second semiconductor laser element 30 can be, for example, 30 degrees or less.

  For example, a semiconductor laser device that emits red light is used as the first semiconductor laser device 20, and a semiconductor laser device that emits blue light and a semiconductor laser that emits green light are used as the second semiconductor laser device 30. A laser element is employed. The combination of colors may be changed in addition to using the semiconductor laser elements of three colors.

  Red light preferably has an emission peak wavelength in the range of 605 nm to 750 nm, and more preferably in the range of 610 nm to 700 nm. Examples of the semiconductor laser device that emits red light include a device containing an InAlGaP-based, GaInP-based, GaAs-based, or AlGaAs-based semiconductor. The output of a semiconductor laser device containing these semiconductors is more likely to be reduced by heat than a semiconductor laser device containing a nitride semiconductor. Considering this point, it is preferable to provide two or more waveguide regions. By increasing the waveguide region, heat can be dispersed, and a decrease in output of the semiconductor laser device can be reduced.

  The blue light preferably has an emission peak wavelength in the range of 420 nm to 494 nm, and more preferably in the range of 440 nm to 475 nm. As a semiconductor laser device that emits blue light, a semiconductor laser device containing a nitride semiconductor can be given. As a nitride semiconductor, for example, GaN, InGaN, and AlGaN can be used.

  Green light preferably has an emission peak wavelength in the range of 495 nm to 570 nm, and more preferably in the range of 510 nm to 550 nm. As a semiconductor laser device that emits green light, a semiconductor laser device containing a nitride semiconductor can be given. As a nitride semiconductor, for example, GaN, InGaN, and AlGaN can be used.

  The submount 40 has a rectangular parallelepiped shape. The shape is not limited to a rectangular parallelepiped. The submount 40 can be formed using, for example, silicon nitride, aluminum nitride, or silicon carbide. In addition, other materials can be used without being limited thereto. Further, a metal film is provided on a part of the submount 40.

  Each of the first and second light reflecting members 50 and 60 has a bottom surface, a side surface extending perpendicularly from the bottom surface, and an upper surface crossing the side surface on a side opposite to the bottom surface. Some regions of the top surface are not parallel to the bottom surface. Also, a part of the upper surface is parallel to the bottom surface. A light reflection surface that reflects light is formed at least in a region that is not parallel to the bottom surface. The light reflecting surface of the first light reflecting member 50 and the light reflecting surface of the second light reflecting member 60 have different shapes. The first light reflecting member 50 has a curved surface shape in which the light reflecting surface is depressed, and the second light reflecting member 60 has a flat light reflecting surface. The angle formed by the plane that is the light reflecting surface of the second light reflecting member 60 and the bottom surface is designed to be 45 degrees.

The first and second light reflecting members 50 and 60 are made of a heat-resistant material as a main material to form the outer shape, and a material having a high light reflectance is used for a surface on which a light reflecting surface is to be provided among the formed outer shapes. Can be formed. As the main material, quartz or glass such as BK7 (borosilicate glass), metal such as aluminum, or Si or the like can be used. As the light reflecting surface, a metal such as Ag or Al, or a dielectric multilayer film such as Ta ₂ O ₅ / SiO ₂ , TiO ₂ / SiO ₂ , Nb ₂ O ₅ / SiO ₂ or the like can be adopted. The outer shape of the first and second light reflecting members 50 and 60 may be formed using a material having a high light reflectance such as a metal, and the light reflecting film may be omitted. The light reflecting surfaces of the first and second light reflecting members 50 and 60 can each have a light reflectance of 99% or more with respect to the peak wavelength of the laser light to be reflected. Their light reflectance can be less than or equal to 100% or less than 100%.

  The lid member 70 has a rectangular parallelepiped shape. The lid member 70 is translucent as a whole. Note that a non-light-transmitting region may be partially provided. The shape is not limited to a rectangular parallelepiped. The lid member 70 can be formed using sapphire as a main material. Further, a metal film is provided in a part of the region. Sapphire is a material having a relatively high refractive index and relatively high strength. Note that, for example, glass or the like can be used as the main material in addition to sapphire.

  The lens member 80 has three lens portions 82 having a lens shape, and other non-lens portions 81. The lens member 80 is formed in such a manner that three lens portions 82 are connected and provided on one surface of the non-lens portion 81. The lens member 80 can be formed in a shape in which the non-lens portion 81 and the lens portion 82 are integrated. For example, by molding using a mold having such a shape, the lens member 80 in which the non-lens portion 81 and the lens portion 82 are integrally combined can be manufactured. Manufacturing the integrally synthesized lens member 80 is excellent in terms of productivity.

  Alternatively, a member obtained by shaping the shape of the non-lens portion 81 and a member obtained by shaping the shape of the lens portion 82 are separately prepared, and the lens portion 82 is formed on the surface of the non-lens portion 81 by bonding. It may be. As the lens member 80, for example, BK7, B270, glass such as borosilicate glass, or the like can be used.

  The plane of the non-lens portion 81 that overlaps the surface on which the lens portion 82 is provided is defined as a boundary surface between the lens portion 82 and the non-lens portion 81. The term “boundary surface of the lens portion 82” indicates a surface of the lens portion 82 that overlaps the boundary surface. Even when the lens part 82 and the non-lens part 81 are integrally formed, a region virtually overlapping with the boundary surface can be regarded as this. When the lens member 80 does not have the non-lens portion 81, the plane of the lens portion 82 opposite to the surface having the lens shape (curved surface structure) is regarded as the boundary surface of the lens portion 82.

  The bonding portion 90 is formed by hardening an adhesive. It is preferable to use an ultraviolet curable resin as an adhesive for forming the bonding portion 90. Since the ultraviolet curable resin can be cured in a relatively short time without heating, it is easy to fix the lens member 80 at a desired position.

Next, the light emitting device 1 manufactured using these components will be described.
One first semiconductor laser device 20 and two second semiconductor laser devices 30 are arranged via a submount 40 on the upper surface US of the bottom that forms the bottom surface of the base 10. In the case where the sub-mount 40 is not interposed, the first and second semiconductor laser elements are directly arranged on the upper surface US of the bottom. Further, in the light emitting device 1, a red first semiconductor laser element 20, a blue second semiconductor laser element 30 and a green second semiconductor laser element 30 are arranged.

  In the light emitting device 1, the first semiconductor laser element 20 that emits red light is disposed at the center, the first semiconductor laser element 30 that emits red light, and the first semiconductor laser that emits red light at a position sandwiching the second semiconductor laser element 30 An element 20 and a second semiconductor laser element 30 that emits green light are arranged. This takes into account that the first semiconductor laser element 20 that emits red light has poorer light output characteristics with respect to heat than the others. Furthermore, it is taken into consideration that the second semiconductor laser element 30 that emits blue light generates less heat than the second semiconductor laser element 30 that emits green light. That is, in consideration of such heat characteristics, it is preferable to arrange the semiconductor laser device having the best characteristics among the three semiconductor laser devices in the center.

  In addition, one first light reflecting member 50 and one second light reflecting member 60 are arranged on the upper surface US of the bottom. The bottom upper surface US is joined to the bottom surfaces of the first and second light reflecting members. The main part of the light emitted from the first semiconductor laser element 20 is irradiated on the light reflecting surface of the first light reflecting member 50, and the main part of the light emitted from the second semiconductor laser element 30 is irradiated on the second light reflecting member 60. The first and second light reflecting members are arranged so that the light reflecting surface is irradiated.

  Through the reflection by the light reflecting member, the optical path length can be made longer than when no light reflecting member is interposed. The longer the optical path length is, the smaller the effect of mounting deviation between the light reflecting member and the semiconductor laser element can be. Instead of one second light reflecting member 60 corresponding to the two second semiconductor laser elements 30, two second light reflecting members 60 are prepared according to each of the two second semiconductor laser elements 30. Is also good.

  The frame of the base 10 surrounds the first and second semiconductor laser elements 20 and 30, the submount 40, and the first and second light reflecting members 50 and 60 disposed on the upper surface US at the bottom. Thus, these components are arranged on the bottom upper surface US, inside the frame by the frame. One ends of the plurality of wires 91 are joined to the metal film provided on the upper surface of the step portion ST of the frame portion. The other ends of the plurality of wires 91 are joined to the first and second semiconductor laser devices. Thereby, the first and second semiconductor laser elements 20 and 30 are electrically connected to a power supply provided outside the light emitting device 1.

  The step ST is not provided in a part of the inner surface IS of the frame of the base 10. Further, a side surface of the first semiconductor laser device 20 opposite to the side surface near the first light reflection member 50 and a side surface of the first light reflection member 50 near the first semiconductor laser device 20 are opposite to the side surface. And the sides are arranged such that this area comes. When the step ST is provided on the side surface on the side opposite to the first semiconductor laser device 20 and on the side opposite to the first semiconductor laser device 20, when the wire 91 connecting to the first semiconductor laser device 20 is stretched, the wire ST straddles the first light reflecting member 50. Become. Therefore, there is no step ST provided for electrical connection here. By not providing the step ST in a part as described above, the light emitting device 1 can be made smaller.

  The submount 40 has three semiconductor laser elements arranged on its upper surface. Note that a submount 40 may be provided in a one-to-one correspondence with each of the first and second semiconductor laser elements 20 and 30. The submount 40 is joined to the bottom of the base 10 at the bottom surface and to the semiconductor laser device at the top surface. The semiconductor laser device is bonded to a metal film provided on the upper surface of the submount 40 via a conductive bonding agent such as Au-Sn.

  From the viewpoint of heat dissipation, if the submount 40 has a thermal conductivity higher than that of the bottom of the base 10, a higher effect as a heat spreader can be obtained. For example, when a material containing a nitride semiconductor is used as the semiconductor laser element and aluminum nitride is used as the main material of the base 10, aluminum nitride or silicon carbide can be used as the submount 40. When aluminum nitride is used for the base 10 and the submount 40, aluminum nitride used for the submount 40 may have higher thermal conductivity than aluminum nitride used for the base 10.

  The shape of the submount 40 is designed such that the heights of the semiconductor laser devices 20 and 30 from the bottom are the same. Further, the distance between the submount 40 provided on the first semiconductor laser element 20 and the first light reflecting member 50 is equal to the distance between the submount 40 provided on the second semiconductor laser element 30 and the second light reflecting member 60. Is designed to be the same as the distance between It should be noted that even if the design is the same, errors occur due to member tolerances, mounting tolerances, and the like at the mounting stage. If the height and length of the light emitting device 1 or the position of the light emitting device 1 are the same, such an error includes an allowable range. Further, these heights and distances do not necessarily have to be the same.

  The distance between the emission end face of the first semiconductor laser element 20 and the first light reflecting member 50 is the same as the distance between the emission end face of the second semiconductor laser element 30 and the second light reflection member 60. Designed. The emission end faces of the first and second semiconductor laser elements are designed to be provided on the same plane. That is, the emission end faces of the first and second semiconductor laser elements are arranged on one of the two virtual parallel planes, and the first light reflection closest to the first semiconductor laser element 20 on the other plane. It is designed such that the side surface of the member 50 and the side surface of the second light reflecting member 60 closest to the second semiconductor laser element 30 are arranged.

  The lid member 70 is joined to the frame on the upper surface opposite to the bottom surface of the base 10, and covers the frame formed by the inner side surface IS of the frame. On the lower surface of the lid member 70, a metal film is provided in a region joined to the base 10, and the lid member 70 is fixed to the base 10 via Au-Sn or the like. When the frame is covered by the rectangular parallelepiped lid member 70, the height from the bottom surface of the base 10 to the top surface of the frame is higher than the height from the bottom surface to the first and second semiconductor laser elements 20 and 30, and It is higher than the height up to the second light reflecting members 50 and 60.

  Further, the closed space formed by joining the base 10 and the lid member 70 becomes a hermetically sealed space. By performing the hermetic sealing in this way, it is possible to suppress the collection of organic substances and the like on the light emitting end surfaces of the first and second semiconductor laser elements.

  The light reflected by the light reflecting surfaces of the first and second light reflecting members 50 and 60 enters the lid member 70. The cover member 70 has a light-transmitting region from the time when the reflected light is incident to the time when the reflected light is emitted so that at least the reflected light in which the main part of the light is reflected passes through the cover member 70 and is emitted to the upper surface. Designed to be. Here, the translucency means that the transmittance for light is 80% or more. In other words, the light of the main part reflected by the light reflecting surface passes through the lid member 70 having a light transmitting property with respect to the wavelength range of the light emitted by the first and second semiconductor laser elements 20 and 30, The light is emitted outside the hermetically sealed space.

  In a region where light passes, the spread of light can be suppressed as the material forming the lid member 70 has a higher refractive index. For example, the cover member 70 is made of sapphire at least in a region where light reflected by the light reflecting surface of the first or second light reflecting member among the light of the main part emitted from the first and second semiconductor laser elements passes. It is good to be composed.

  The bonding portion 90 is formed on the upper surface of the lid member 70 in a region where the lid member 70 and the lens member 80 are bonded. The bonding portion 90 is formed between the lid member 70 and the lens member 80 by applying an adhesive to the bonding region on the upper surface of the lid member 70, attaching the lower surface of the lens member 80 thereto, and curing the adhesive. You. The bonding portion 90 is formed to have a certain thickness so that the lid member 70 and the lens member 80 do not come into contact with each other. This thickness is designed in consideration of mounting errors and member tolerances. Accordingly, when a position of light passing through the lid member 70 is shifted according to a mounting error of the semiconductor laser element and the light reflecting member disposed on the base 10, a position and a height of the lens member 80 are arranged. After adjusting the above, the lens member 80 can be joined to the lid member 70.

  Further, the bonding portion 90 is not formed on the entire area of the upper surface of the lid member 70 or the entire area of the lower surface of the lens member 80, and does not interfere with the path of the light emitted from the first and second semiconductor laser elements 20 and 30. It is provided as follows. Therefore, preferably, the bonding portion 90 is not formed on the lower surface of the lens member 80 corresponding to the region where the lens portion 82 of the lens member 80 is formed, but is formed on the outer edge region of the lens member 80.

  The lens member 80 is joined to the lid member 70 via an adhesive portion 90 on the lid member 70. Further, the lens member 80 is arranged such that the lens portion 82 of the lens member 80 is provided on the surface opposite to the surface joined to the lid member 70. Each of the three lens portions 82 of the lens member 80 is arranged corresponding to each of the three semiconductor laser elements arranged at the bottom.

  That is, the upper surfaces of the three lens portions 82 serve as emission surfaces of light emitted from the three semiconductor laser elements and incident on the lens member 80. The main part of the light emitted from the first semiconductor laser element 20 is reflected by the light reflecting surface of the first light reflecting member 50, passes through the cover member 70 and enters the lens member 80, and the three lens portions 82 The light passes through the first lens portion 83, which is one of them, and is emitted to the outside of the lens member 80.

  The main part of the light emitted from one of the two second semiconductor laser elements 30 is reflected by the light reflecting surface of the second light reflecting member 60, passes through the lid member 70, enters the lens member 80, and The light passes through a second lens portion 84 that is one of the two lens portions 82 and is different from the first lens portion 83, and exits out of the lens member 80.

  The main part of the light emitted from the other one of the second semiconductor laser elements 30 is reflected by the light reflecting surface of the second light reflecting member 60, passes through the lid member 70, enters the lens member 80, and The light passes through the third lens portion 85, which is the remaining one of the two lens portions 82, and exits out of the lens member 80.

  Thus, one lens portion 82 is formed corresponding to one semiconductor laser element. Therefore, the number of formed lens portions 82 may vary depending on the number of semiconductor laser elements mounted on the light emitting device 1. For example, in the case of the light emitting device 1 in which only one semiconductor laser element is disposed, only one lens portion 82 may be formed in the lens member 80. That is, the lens unit 82 may be constituted by one or more.

  The lens shape of each lens section 82 is designed such that light from the corresponding semiconductor laser element is collimated and emitted. In the light emitting device 1, the first to third lens portions 83 to 85 have different lens shapes, respectively, which indicates that a plurality of lens portions 82 having the same lens shape can be formed. . It should be noted that the lens may have a lens shape for controlling the traveling direction of light for other purposes such as focusing, not limited to collimation.

  In the case where the non-lens portion 81 and each of the first to third lens portions are separately prepared in the lens member 80, the non-lens portion 81 is bonded onto the lid member 70 using an adhesive. Later, the respective lens portions 82 may be arranged on the upper surface of the non-lens portion 81 and joined. In this case, the position and the traveling direction of the light emitted from the first and second semiconductor laser elements and emitted from the non-lens portion 81 are measured, and the arrangement position of the lens portion 82 is determined based on the measurement result. Can be.

  Next, how the progress of light emitted from the semiconductor laser element in the light emitting device 1 configured as described above is controlled will be described. FIG. 8 is a view for explaining a traveling path of light until light emitted from the second semiconductor laser element 30 is emitted from the lens member 80 based on the cross-sectional view of FIG. FIG. 9 is a diagram for explaining a traveling path of light until light emitted from the first semiconductor laser element 20 is emitted from the lens member 80 based on the cross-sectional view of FIG.

  Here, regarding the first and second semiconductor laser elements 20 and 30, of the light of the main part emitted from each semiconductor laser element, the light reflecting surface is located at the position where the distance from the emission end face of each semiconductor laser element is the shortest. Irradiated light is defined as lower end light. In addition, of the light of the main part emitted from each semiconductor laser element, the light irradiated on the light reflecting surface at the position farthest from the emission end face of each semiconductor laser element is defined as the upper end light. Further, of the light emitted from each semiconductor laser element, light that travels in a direction perpendicular to the light emitting end face of each semiconductor laser element, that is, light that passes on the optical axis, is referred to as central light. The angle formed by the straight line in the direction in which the upper light travels and the straight line in the direction in which the lower light travels is defined as the angle formed by the upper light and the lower light.

  In the example of FIG. 7, of the elliptical FFP light emitted from the semiconductor laser element, light passing through one end on the side closer to the base 10 in the major axis of the ellipse is the lower end light, and the light closer to the lid member 70. Is the upper end light. The light traveling in the center of the ellipse is the central light. When not all the light of the FFP is irradiated on the light reflecting surface, the light at both ends of the major axis of the ellipse, the upper light, and the lower light are not aligned.

  FIG. 7 shows a position where the upper end light is irradiated on the light reflecting surface as UP and a position where the lower end light is irradiated as LP. Further, the position on the light reflecting surface of the first light reflecting member 50 where the center light emitted from the first semiconductor laser element 20 is irradiated is CP1, and the position of the second semiconductor laser element 30 on the light reflecting surface of the second light reflecting member 60 is CP1. The position irradiated with the central light emitted from is indicated by CP2.

  Further, a region where light passing through the major axis of the ellipse is irradiated on a component of the light emitting device 1 is defined as a region corresponding to the major axis of light in the component. For example, the region where the light passing through the major axis of the ellipse of the elliptical FFP light emitted from the first semiconductor laser element 20 is irradiated on the light reflecting surface of the first light reflecting member 50 is referred to as the first light reflecting member 50. Region corresponding to the major axis of the light emitted from the first semiconductor laser element 20 on the light reflecting surface of the light emitting device. Therefore, the region referred to here includes a linear region, and may be a linear region of a straight line or a curved line depending on the shape of a target component.

  In addition to the first and second light reflecting members 50 and 60, the cover member 70, the lens member 80, or the lens portion 82 of the lens member 80, which is a component to which light is incident, also correspond to the long diameter. The area can be specified. When the region corresponding to the major axis of light in the component is a straight line, a direction parallel to the straight line is referred to as a direction corresponding to the major axis of light in the component. Also, the minor axis can be expressed in a similar way, replacing the major axis with the minor axis.

  8 and 9, the path of light emitted from the semiconductor laser device and emitted from the lens member 80 is indicated by a dotted line. The three dotted lines in FIG. 8 indicate paths along which the upper light, the center light, and the lower light emitted from the second semiconductor laser device 30 travel, and the three dotted lines in FIG. It shows the path through which the top light, center light, and bottom light travel. In FIG. 9, the first semiconductor laser element 20 is a straight line parallel to the direction in which the central light emitted from the second semiconductor laser element 30 is reflected by the light reflecting surface of the second light reflecting member 60 and travels. A straight line passing through the irradiation point CP1 of the center light radiated from is described as an auxiliary line L.

  In the light emitting device 1, light emitted from the first and second semiconductor laser elements is reflected via the light reflecting surface of the first or second light reflecting member, and enters the lid member 70 from a hermetically sealed space. I do. The light that has passed through the lid member 70 and emitted outside passes through the gap between the lid member 70 and the lens member 80 generated by the bonding portion 90 and enters the lens member 80. Then, the light that has entered the lens member 80 passes through the lens portion 82 and exits the light emitting device 1.

  The light reflecting surface of the first light reflecting member 50 narrows the spread of light emitted from the first semiconductor laser device 20 in the vertical direction. In other words, in the vertical direction of the light, the light is reflected such that the divergence angle of the reflected light is smaller than the divergence angle of the light emitted from the first semiconductor laser element 20 and applied to the light reflecting surface.

  Here, the angle formed by the upper end light and the lower end light emitted from the emission end face of the first semiconductor laser element 20 and reaching the light reflection surface is defined as the divergence angle of the light applied to the light reflection surface in the vertical direction. . The angle formed by the upper end light and the lower end light reflected from the light reflecting surface and traveling from the light reflecting surface is referred to as the divergence angle of the light reflected by the light reflecting surface in the vertical direction of the light. Here, the angle formed by the upper end light and the lower end light is an angle that includes the central light. On the other hand, since the light reflecting surface of the second light reflecting member 60 is a flat surface, the angle formed by the upper end light and the lower end light does not change between light traveling from the light reflecting surface and light reaching the light reflecting surface.

  In addition, the light reflecting surface of the first light reflecting member 50 narrows the spread of light emitted from the first semiconductor laser element 20 in the vertical direction, but does not collimate. That is, the divergence angle of the light reflected on the light reflecting surface in the vertical direction of the light is not set to 0 degree. Further, as shown in FIG. 9, the light reflecting surface of the first light reflecting member 50 in the light emitting device 1 is designed such that the reflected light has some spread.

  In addition, the light having the spread refers to the light emitted from one semiconductor laser device and passing through two points having the same optical path length and different positions, the larger the optical path length, the more two points in the same optical path length This means that the relationship of increasing the distance between them is satisfied. Therefore, in the light emitting device 1, this relationship is satisfied at least until the light is reflected on the light reflecting surface and enters the lid member 70. For example, when light emitted from a focal point is reflected by a hyperboloidal reflecting surface, the reflected light has a spread.

  If the reflected light is designed to be collimated, since the light incident on the lens member 80 has already been collimated, it is not necessary to provide the first lens unit 83. Then, when the mounting position or the like of the first semiconductor laser element 20 or the first light reflecting member 50 deviates from the design value, the influence of the deviation cannot be corrected even if the mounting position or the height of the lens member 80 is adjusted. . On the other hand, by designing the shape of the light reflecting surface of the first light reflecting member 50 such that the light spreads while suppressing the spread of the light by reflection, the first lens portion provided on the lens member 80 is provided. The adjustment of the outgoing light by the light emitting device 83 becomes possible.

  In addition, the shape of the light reflecting surface of the first light reflecting member 50 may be a shape having a narrowing instead of a shape having the reflected light spread. The light having the narrowing means that the light passing through two points having the same optical path length but different positions satisfies the relationship that the larger the optical path length, the smaller the distance between the two points in the same optical path length. I do. For example, when light emitted from a focal point is reflected by an elliptical reflecting surface, the reflected light has a narrowing. When light emitted from the focal point is reflected by a parabolic reflecting surface, the reflected light is collimated.

  In the light emitting device 1, since the light emitted from the second semiconductor laser element 30 has a spread until it exits the lens member 80, the light emitted from the first semiconductor laser element 20 is adjusted to this. In this case, the influence of the displacement of the mounting position is small. Further, in the first light reflecting member 50, the curvature of the light reflecting surface can be made smaller when the light is spread than when the light is spread. The smaller the curvature, the smaller the effect of the mounting displacement.

  For example, in the light emitting device 1, with respect to the semiconductor laser light having a vertical divergence angle of 55 degrees or more, the divergence is narrowed to a range where the angle formed by the upper end light and the lower end light is larger than 0 degree and 20 degrees or less. The curved shape of the light reflecting surface may be designed.

  The light reflecting surface of the first light reflecting member 50 is such that a region corresponding to the major axis direction of the light emitted from the first semiconductor laser element 20 is a curved surface, and a region corresponding to the minor axis direction of the light is a straight line. Designed with a simple cylindrical surface. Therefore, an error in the minor axis direction of the first semiconductor laser element 20 or the first light reflecting member 50 due to a member tolerance, a mounting tolerance, or the like affects the traveling direction when light in the major axis direction is reflected by the light reflecting surface. do not do.

  On the light reflecting surface of the first light reflecting member 50 formed by the cylindrical surface, the horizontal divergence angle of the light reflected by the light reflecting surface of the first light reflecting member 50 does not change. Since the first and second semiconductor laser elements in the light emitting device 1 emit FFP laser light having a smaller horizontal spread than the vertical spread, such a shape controls the horizontal spread. Rather, it can be said that the shape emphasizes the control accuracy of the spread of light in the vertical direction.

  The light reflecting surface of the first light reflecting member 50 may be formed so as to reduce the spread of light in the horizontal direction, not limited to the spread of light in the vertical direction. For example, instead of a cylindrical surface, a surface having a curvature in the horizontal direction, such as a spherical surface or a toroidal surface, may be used.

  The distance from the emission end face of the first semiconductor laser element 20 to the position CP1 where the center light of the first semiconductor laser element 20 is irradiated on the light reflecting surface of the first light reflecting member 50 is the second semiconductor laser element. It is longer than the distance from the emission end face of the second semiconductor laser element 30 to the position CP2 on the light reflection surface of the second light reflection member 60 where the center light of the second semiconductor laser element 30 is irradiated. That is, the center light of the first semiconductor laser element 20 is reflected at a farther position.

  FIG. 10 shows a first light reflecting member when the distance until the central light of the first semiconductor laser element 20 is irradiated is adjusted to the distance to the position CP2 where the central light of the second semiconductor laser element 30 is irradiated. FIG. 999 is a diagram showing a light reflection surface of 999. The broken line is a virtual line representing the shape of the light reflecting surface of the first light reflecting member 50. As shown in FIG. 10, the first light reflecting member 999 adapted to CP2 has a smaller light reflecting surface than the first light reflecting member 50. Therefore, when the vertical divergence angle of the light is large, providing the CP1 at a distance away from the CP2 can irradiate more light to the light reflecting surface than adjusting to the CP2.

  The light reflecting surface of the first light reflecting member 50 is designed so that the central light of the light emitted from the first semiconductor laser element 20 is reflected not in a direction perpendicular to the optical axis but in an acute angle direction. On the other hand, the light reflecting surface of the second light reflecting member 60 is designed so that the center light of the light emitted from the second semiconductor laser element 30 is reflected in the vertical direction. Further, when the angle between the direction in which the center light is incident on the light reflecting surface and the direction in which the central light is reflected by the light reflecting surface and incident on the cover member 70 is the angle formed by the one that does not straddle the light reflecting member, the first semiconductor The angle of the laser element 20 is smaller than that of the second semiconductor laser element 30.

  This takes into account that, as described above, the center light of the first semiconductor laser element 20 is reflected at a position farther from the emission end face in the positional relationship between CP1 and CP2. FIG. 11 shows a specific arrangement example in the case where a region corresponding to the major axis of light on the light reflecting surface of the first light reflecting member 50 is a hyperbola. When the vertex of the hyperbola forming the light reflecting surface is VX, the focal point on the side closer to the hyperbola is F1, and the other focal point is F2, the light emission position at the emission end face of the first semiconductor laser element 20 is located at the focal point F1. Is provided. Further, by making the angle formed by the line segment connecting the focal point F1 and the position CP1 and the line segment connecting the focal point F2 and the position CP1 larger than 90 degrees, the center light becomes the optical axis as described above. The light can be reflected in an acute angle direction. The angle formed by the line segment connecting the position CP1 and the focal point F1 and the line segment connecting the vertex VX and the focal point F1 is less than 90 degrees.

  The first to third lens portions are connected so that the lens width LW is the same and the center of the lens width LW is also the same in the direction corresponding to the major axis of light at the boundary surface of the lens portion 82. I have. By doing so, collimated light having the same width can be emitted from each of the lens portions 82 in the direction corresponding to the major axis of light at the boundary surface of the lens portions 82. Further, the emission positions of the collimated light in the direction corresponding to the major axis of the light at the boundary surface of the lens unit 82 can be aligned.

  Since the first to third lens portions are connected as described above, the center light of the light emitted from the first semiconductor laser device 20 and the center light of the light emitted from the second semiconductor laser device 30 are combined. If the light is reflected at the same angle on the light reflecting surface, a difference equivalent to the difference in the distance on the light reflecting surface also occurs in the lens member 80.

  Therefore, as described above, the first semiconductor laser element 20 reflects the center light at an angle smaller than that of the second semiconductor laser element 30, so that the light emitted from the first semiconductor laser element 20 and the second semiconductor laser The displacement of the region corresponding to the major axis of the light emitted from the lens member 80 can be suppressed from the light emitted from the element 30.

  Specifically, with respect to the direction corresponding to the major axis of light at the boundary surface of the lens portion 82, the irradiation point of the central light of the first semiconductor laser element 20 and the irradiation point of the central light of the second semiconductor laser element 30 on the light reflecting surface The distance between the emission point of the central light of the first semiconductor laser element 20 and the emission point of the central light of the second semiconductor laser element 30 that exits the lens unit 82 is smaller than the distance between the two. The shape of the light reflecting surface is designed.

  Further, the traveling direction of the reflected light is controlled so that the amount of light emitted through the first lens unit 83 is maximized, in other words, the amount of light not passing through the first lens unit 83 is minimized. It is preferable that the light reflecting surface of the first light reflecting member 50 be designed in such a shape.

  It is more preferable that the lower end light and the upper end light from the first semiconductor laser element 20 fall within the lens width LW of the first lens unit 83 in the direction corresponding to the major axis of the light at the boundary surface of the first lens unit 83. . In other words, it is preferable that the lower end light and the upper end light from the first semiconductor laser element 20 pass through the boundary surface of the first lens unit 83. Further, it is preferable that the lower end light and the upper end light from the first semiconductor laser device 20 pass through the first lens unit 83 and exit. The same applies between the lower end light and the upper end light from the two second semiconductor laser elements 30, and the second and third lens portions 84 and 85 corresponding to the respective second semiconductor laser elements 30. I can say.

  As described above, according to the light emitting device 1 according to the first embodiment, the light from the first semiconductor laser element 20 is reflected by the first light reflecting member 50 and passes through the first lens portion 83 of the lens member 80. By emitting the light, the light emitting device 1 in which the spread of the emitted light is suppressed can be realized. Thus, the light passing through the lens unit 82 can be reduced to a small amount, so that the progress of the light can be controlled by the smaller lens unit 82.

  The light emitting device 1 according to the first embodiment is useful for emitting collimated light in a small area. For example, the light emitting device 1 of the first embodiment can be used when it is desired to emit collimated light so that more light can be accommodated in a circular region having a diameter of about several mm. In particular, according to the light emitting device 1 of the first embodiment, 90% or more of the light of the main portion emitted from the first semiconductor laser element 20 whose vertical divergence angle is 55 degrees or more and 75 degrees or less corresponds to the major axis. It can pass through the first lens portion 83 having a lens width LW of 1.0 mm or more and 2.0 mm or less in the set direction.

<Second embodiment>
Next, a light emitting device 2 according to a second embodiment will be described. The components include a base, one first semiconductor laser element, two second semiconductor laser elements, a submount, a first light reflecting member, a second light reflecting member, a lid member, a lens member, a bonding part, and a wire. Is similar to the light emitting device 1 of the first embodiment. What differs from the first embodiment is the shape of the lens member 280 and the position of the surface on which the lens portion 282 is arranged. FIG. 12 is a perspective view of the light emitting device 2 as viewed from the side from which light is emitted. FIG. 13 is a top view of the light emitting device 2 shown in FIG. 12 when the side from which light is emitted is the top surface. FIG. 14 is a cross-sectional view of the light emitting device 2 taken along a line connecting XIV-XIV in FIG.

Next, the lens member 280 will be described.
The lens member 280 has three lens portions 282 having a lens shape and other non-lens portions 281. The shape of the three lens portions 282 may be the same as that in the first embodiment. On the other hand, in the light emitting device 1 of the first embodiment, the non-lens portion 281 has a rectangular parallelepiped shape, but in the light emitting device 2, it has a concave shape. Then, three lens portions 282 are provided in the concave depression of the non-lens portion 281.

  Further, the height from the boundary surface of the three lens portions 282 provided in the concave depression is equal to the height from the boundary surface to the uppermost surface of the concave shape. Here, “equal” includes a difference within 0.1 mm. It should be noted that the difference between the height of the lens portion 282 and the height of the concave portion may be 0.1 mm or more if the height is smaller than the height of the concave portion. That is, the height from the boundary surface of the three lens portions 282 is designed to be equal to or smaller than the height from the boundary surface of the concave shape to the uppermost surface. By adjusting the height by increasing the thickness of the bonding portion 90, the height of the lens portion 282 can be made larger than the height up to the uppermost surface of the concave shape.

Next, mounting of the lens member 280 in the light emitting device 2 will be described.
In the light emitting device 2, the lens member 280 is arranged so that the three lens portions 282 come near the upper surface of the lid member 70. In addition, the uppermost surface of the concave shape of the lens member 280 and the upper surface of the lid member 70 are joined via an adhesive, so that an adhesive portion 90 is formed. When the concave shape of the non-lens portion 281 is viewed as the upper surface side of the lens member 280 and the opposite flat surface is viewed as the lower surface side, the lens member 280 is turned over, and the lower surface side surface comes to the upper surface side of the light emitting device. Arranged as follows.

  As described above, the three lens portions 282 are designed not to exceed the concave upper surface of the non-lens portion 281 in order to avoid contact with the lid member 70. If the lens member 280 is designed to be in contact with the lid member 70, it is difficult to adjust the position and the height when the lens member 280 is joined to the lid member 70.

  The first lens portion 283 corresponds to the first semiconductor laser device 20, the second lens portion 284 corresponds to one of the two second semiconductor laser devices 30, and the third lens portion 285 corresponds to the two second semiconductor laser devices 30. The other one of them is arranged so as to be collimated in common with the light emitting device 1 of the first embodiment. Without changing the position when viewed from the upper surface, the first to third lens portions arranged on the non-lens portion 281 on the upper surface side of the light emitting device 1 in the first embodiment are changed on the opposite surface. The shape is such that it is arranged on the non-lens portion 281.

  In the light emitting device 2 of the second embodiment mounted as described above, the optical path length until the light enters the lens portion 282 of the lens member 280 is shorter than that of the light emitting device 1 of the first embodiment. The light that has entered the lens unit 282 is collimated, passes through the lens member 280, and exits from the non-lens unit 281. Since the light reflected by the light reflecting surface of the light reflecting member has a spread, the shorter the optical path length, the smaller the spread of the light. That is, in the light emitting device 2 of the second embodiment, the spread of light passing through the lens unit can be suppressed as compared with the light emitting device 1 of the first embodiment.

  The first lens portion 283 corresponding to the first semiconductor laser element 20 having a larger light spread than the second semiconductor laser element 30 is provided on the surface of the lens member 280 on the side closer to the lid member 70, and The third lens portion may be provided on the surface of the lens member 280 on the side opposite to the side near the lid member 70.

<Third embodiment>
Next, a light emitting device 3 according to a third embodiment will be described. FIG. 15 is a perspective view of the light emitting device 3 as viewed from the side from which light is emitted. FIG. 16 is a top view of the light emitting device 3 shown in FIG. 15 when the side from which light is emitted is the top surface. FIG. 17 is a cross-sectional view of the light emitting device 3 taken along a line connecting XVII-XVII in FIG. The light emitting device 3 of the third embodiment is different from the light emitting device 2 of the second embodiment in that the light emitting device 3 further includes a wave plate 300. As the wave plate 300, a half wave plate that changes the polarization direction of light by 90 degrees can be adopted.

  In the light emitting device 3, the wave plate 300 is provided to change the polarization direction of light emitted from the first semiconductor laser device 20. Therefore, on the surface of the lens member 280 opposite to the concave surface on which the first lens portion 283 is disposed, a wavelength plate is provided in a region through which light emitted from the first semiconductor laser element 20 and incident on the first lens portion 283 passes. 300 are arranged.

  In the light emitting device 3, the polarization directions of the first semiconductor laser element 20 and the second semiconductor laser element 30 are different by 90 degrees. For example, the first semiconductor laser element 20 emits p-polarized laser light and the second semiconductor laser element 30 emits s-polarized laser light from the emission end face. Therefore, by passing the light emitted from the first semiconductor laser element 20 through the wave plate 300, the polarization directions of the light emitted from the first and second semiconductor laser elements 20 and 30 and emitted from the light emitting device 3 are aligned. Can be. Therefore, the wave plate 300 may be any as long as it eliminates the shift in the polarization direction.

  By providing the wave plate 300 on the surface of the lens member 280 opposite to the surface on which the lens portion 282 is provided, as in the light emitting device 3, the light emitting device 3 emits light with a uniform polarization direction in a compact design. Can be realized. Further, according to the configuration of the light emitting device 3, since the collimated light is made incident on the wave plate 300, the reflection loss on the surface of the wave plate 300 is reduced as compared with the case where the light to be diffused or collected is made incident. Can be reduced.

<Design Example 1>
Next, a specific design example of the light emitting device according to the first embodiment will be described. A first semiconductor laser device that emits red light with a vertical divergence angle of about 65 degrees, a second semiconductor laser device that emits green light with a vertical divergence angle of approximately 46 degrees, and a vertical divergence angle is A second semiconductor laser device that emits blue light at approximately 45 degrees and is disposed on the bottom.

  The distance between the submount on which the first and second semiconductor laser elements are disposed and the first and second light reflecting members is 0.15 mm, and the height from the surface of the base where the submount is disposed to the lid member is smaller. 1.00 mm, the height from the surface on which the submount of the base is disposed to the surface of the submount on which the first and second semiconductor laser elements are disposed is 0.4 mm, and the first light reflecting member of the base is disposed. The minimum height from the surface to the light reflecting surface is 0.16 mm, the maximum is 0.85 mm, and the minimum height from the surface on which the second light reflecting member of the base is arranged to the light reflecting surface is 0.25 mm, the maximum Is 0.8 mm, the thickness of the cover member (height from the bottom surface to the top surface of the cover member) is 0.50 mm, the thickness of the adhesive portion is 0.2 mm, and the thickness of the non-lens portion of the lens member (from the bottom of the lens member to the lens). 1.40 mm, height to the interface with the lens The thickness of the lens portion of the material (the height from the boundary surface with the non-lens portion to the vertex in the lens shape) is 0.3 mm, and the lens width of the first to third lens portions of the lens member is 1.20 mm. .

  The distance from the emission end face of the first semiconductor laser element to the position of the light reflecting surface irradiated with the center light of the first semiconductor laser element is 0.47 mm, and the distance from the emission end face of the second semiconductor laser element to the center of the second semiconductor laser element. The distance to the position of the light reflecting surface where light is irradiated is 0.30 mm. Further, the divergence angle in the vertical direction of the reflected light reflected on the light reflecting surface of the first light reflecting member is 8.3 degrees.

  In such a light emitting device, when the width corresponding to the major axis of the collimated light emitted from the lens member is 1.0 mm, 90% or more of the light emitted from the semiconductor laser element is obtained in the width. Was calculated.

  As described above, the light emitting device according to the present invention having the technical features disclosed in the specification includes the structures of the light emitting device 1, the light emitting device 2, and the light emitting device 3 described in each embodiment of the specification. It is not limited to. For example, the present invention can be applied to a light emitting device having a component that is not disclosed in any of the embodiments, and the difference from the disclosed light emitting device is based on the grounds that the present invention cannot be applied. Not be.

  This means that the present invention can be applied even if it is not essential to provide all necessary components of the light emitting device disclosed in any of the embodiments. For example, when some of the components of the light emitting device disclosed in each embodiment are not described in the claims, the components are not limited to those disclosed in this embodiment, The present invention recognizes the degree of freedom of design by those skilled in the art such as, omission, deformation of shape, change of material, and the like, and requests that the invention described in the claims be applied.

  The light-emitting device described in each embodiment can be used for a light source such as a head-mounted display, a projector, a vehicle-mounted headlight, lighting, and a display backlight.

1, 2, 3 Light-emitting device 10 Base 20 First semiconductor laser element 30 Second semiconductor laser element 40 Submount 50, 999 First light reflecting member 60 Second light reflecting member 70 Cover member 80, 280 Lens member 81, 281 Non Lens part 82, 282 Lens part 83, 283 First lens part 84, 284 Second lens part 85, 285 Third lens part 90 Adhesive part 91 Wire 300 Wave plate

Claims (15)

A base having a bottom,
A first semiconductor laser device disposed on a bottom of the base;
A first light reflecting member disposed on a bottom of the base and having a light reflecting surface for reflecting light emitted from the first semiconductor laser element,
The light-reflecting surface of the first light-reflecting member is reflected by the light-reflecting surface more than the divergence angle of light applied to the light-reflecting surface with respect to light of a main portion emitted from the first semiconductor laser element. A light emitting device having a curved surface shape, in which a divergence angle of light is reduced and a divergence angle of light reflected on the light reflecting surface is not set to 0 degrees.   The light emitting device according to claim 1, wherein the first semiconductor laser element emits light having a vertical divergence angle of 55 degrees or more and 75 degrees or less.   The light emitting device according to claim 1, wherein the first light reflecting member has the light reflecting surface that reduces a divergence angle of reflected light in a vertical direction of light emitted from the first semiconductor laser element. 4. . A lens member including a first lens portion;
The light emitting device according to claim 1, wherein light reflected on the light reflecting surface of the first light reflecting member passes through the first lens unit.   The light emitting device according to claim 4, wherein the lens member has a first lens portion having a shape in which emitted light is collimated.   The light emitting device according to claim 4, wherein a lens width of the first lens unit is 1.0 mm or more and 2.0 mm or less. One or more second semiconductor laser devices disposed on a bottom of the base;
A second light reflecting member disposed on the bottom of the base and having a light reflecting surface for reflecting light emitted from the second semiconductor laser element;
The light emitting device according to claim 4, wherein a shape of a light reflecting surface of the first light reflecting member is different from a shape of a light reflecting surface of the second light reflecting member.   The light emission according to claim 7, wherein a vertical divergence angle of light emitted from the first semiconductor laser element is larger than a vertical divergence angle of light emitted from the second semiconductor laser element by 10 degrees or more. apparatus. The lens member has a second lens unit,
9. The device according to claim 7, wherein the second light reflecting member is arranged such that light emitted from the second semiconductor laser element and reflected on the light reflecting surface of the second light reflecting member passes through the second lens portion. A light-emitting device according to claim 1.   The distance until the light emitted from the first semiconductor laser element passing on the optical axis reaches the light reflecting surface of the first light reflecting member passes along the optical axis emitted from the second semiconductor laser element. The light emitting device according to any one of claims 7 to 9, wherein the distance is longer than a distance until the light reaches the light reflecting surface of the second light reflecting member.   The light reflecting surface of the first light reflecting member is an angle formed by a direction in which light passing on an optical axis is incident on the light reflecting surface and a direction in which the light is reflected by the light reflecting surface, and the first light reflecting member is The light emitting device according to any one of claims 7 to 10, wherein the first semiconductor laser element is formed to have a smaller angle than the second semiconductor laser element with respect to a corner having no straddling. Having a lid member joined to the frame of the base,
The light emitting device according to claim 4, wherein the lens member is joined to the lid member on a surface opposite to a surface joined to the frame portion.   The lid member is configured such that at least a region where light of a main part emitted from the first semiconductor laser element and light reflected by the light reflecting surface of the first light reflecting member passes is made of sapphire. The light emitting device according to claim 12, wherein the light emitting device is used.   14. The light emitting device according to claim 12, wherein the lens member has the first lens portion disposed on a surface on a side to be joined to the lid member. An adhesive portion formed by an adhesive for joining the lid member and the lens member,
The light emitting device according to any one of claims 12 to 14, wherein the bonding portion has a thickness that does not allow the lid member and the lens member to come into contact with each other.

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