JP2020037253A - Laminate, and target material - Google Patents

Abstract

To provide a laminate equipped with a blackened film having a low reflection factor.SOLUTION: A laminate 10 includes a transparent substrate 18, a metal layer 32 laminated on the substrate 18 to form an electrode and/or a wiring, and a blackened film 35 laminated on the surface of the metal layer 32 opposite to the substrate 18 or a blackened film 34 laminated between the metal layer 32 and the substrate 18. These blackened films 34, 35 are made of a nitride of a titanium alloy represented by (TiMo)Nand inevitable impurities, wherein x and y show each an atom ratio and satisfy 0.03≤x≤0.28, and 0.40≤y≤0.60 respectively.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a laminate having a blackening film that suppresses reflection on a metal layer and a target material used for forming the blackening film.

  The liquid crystal panel has a color filter substrate, a TFT array substrate, and a liquid crystal layer sandwiched between these two substrates. As for the electrodes formed on the TFT array substrate, not only a transparent ITO (Indium Tin Oxide) electrode but also a fine metal electrode is used. In the case of a metal electrode, since the metal line is opaque and has a metallic luster, light from the outside is impinged on the metal line and is reflected, and there is a problem that visibility of the display unit is reduced by the reflected light.

  As a countermeasure, a liquid crystal panel employs a structure in which a black matrix is disposed immediately above a metal electrode to block light reflected from the metal electrode. However, in such a case, it is difficult to reduce the width of the black matrix that partitions the color filters of R (red), G (green), and B (blue) into a lattice shape, and it is necessary to increase the aperture ratio of the color filters. It is difficult to improve the performance.

  On the other hand, as another means for suppressing the reflected light from the metal electrode, various proposals have been made in which a blackening film capable of suppressing reflection is formed on a metal layer forming the metal electrode (for example, the following). Patent Document 1). These blackening films have a certain effect of suppressing reflection at the metal layer, but in recent years, blackening films with lower reflectance have been required.

JP-A-2005-69573

  In view of the above circumstances, an object of the present invention is to provide a laminate including a blackened film having low reflectance and to provide a target material suitable for forming a blackened film having low reflectance. It was done as.

Thus, the laminate of the present invention, a transparent substrate,
A metal layer laminated on the base material to form an electrode and / or wiring,
Having at least a surface of the metal layer opposite to the base material, or a blackened film laminated between the metal layer and the base material,
The blackened film is composed of a nitride of titanium alloy represented by (Ti _1-x Mo _x ) _1-y N _y and unavoidable impurities, x and y each represent an atomic ratio, and 0.03 ≦ x ≦ 0.28, 0.40 ≦ y ≦ 0.60.

  As described above, when forming a laminate including a transparent substrate and a metal layer that forms an electrode and / or a wiring, the laminate of the present invention is formed on the surface of the metal layer opposite to the substrate. (I.e., on the upper surface of the metal layer when the base material is on the lower side and the metal layer is on the upper side), or between the metal layer and the base material, is made of a titanium alloy nitride within a predetermined composition range. It is formed by laminating a blackening film.

  When a blackened film made of a titanium alloy nitride is laminated on the upper surface of the metal layer according to the present invention, the reflection of the light incident on the metal layer from the metal layer side toward the base material side is reduced. be able to.

  On the other hand, when the blackened film is formed between the metal layer and the base material, the base material is set to the upper side, and when the stacked body is arranged in the direction to set the metal layer to the lower side, It is possible to suppress the reflection of the light incident on the metal layer from the side toward the metal layer at a low level, thereby ensuring good visibility.

The blackened film of the present invention is a nitride containing Ti and Mo as metal components. In the formula (Ti _1-x Mo _x ) _1-y N _y that defines the composition, x indicates the atomic ratio of Mo in the metal component, and 1-x indicates the atomic ratio of Ti in the metal component. Further, y indicates the atomic ratio of N in the blackened film.
Since the blackened film containing Ti and Mo as metal components has excellent heat resistance, there is no color change even when heat is applied at 300 ° C. or higher (for example, at 370 ° C. in vacuum for 10 minutes) as in a TFT manufacturing process. The predetermined effect of reducing the reflectance is maintained.

  In the present invention, the atomic ratio x of Mo in the metal component in the blackening film is set to 0.03 ≦ x ≦ 0.28. When the value of x is small and less than 0.03, patterning by wet etching becomes difficult, and the productivity is deteriorated. On the other hand, when the value of x is large and exceeds 0.28, the reflectance exceeds 25% and increases, and the effect of reducing the reflectance decreases. For this reason, in the present invention, the range of x is set to 0.03 ≦ x ≦ 0.28 at which the effect of reducing the reflectance can be obtained while securing the manufacturability.

  Here, a preferable range of x for obtaining the effect of further reducing the reflectance is 0.08 ≦ x ≦ 0.25, and a further preferable range is 0.10 ≦ x ≦ 0.20.

  Further, the effect of reducing the reflectance also depends on the value of the atomic ratio y of N in the blackened film. Therefore, in the present invention, the range of y is set to 0.40 ≦ y ≦ 0.60. Preferably, 0.40 ≦ y ≦ 0.50.

  The blackened film may contain unavoidable impurities in addition to the above elements. For example, oxygen (O) may be contained as an unavoidable impurity at less than 3 at%.

Further, in the present invention, the blackened film may be made of an oxynitride containing Ti and Mo as metal components. In this case, the blackened film is composed of an oxynitride of titanium alloy represented by (Ti _1-x Mo _x ) _1-yZ N _y O _z and unavoidable impurities, and x, y, and z each represent an atomic ratio. , 0.03 ≦ x ≦ 0.28, 0.10 ≦ y ≦ 0.60, and 0.03 ≦ z ≦ 0.47.

In the formula of (Ti _1-x Mo _x ) _1-yZ N _y O _Z that defines the composition of the blackened film, x indicates the atomic ratio of Mo in the metal component, and 1-x indicates the atomic ratio of Ti in the metal component. Indicates the atomic ratio. Further, y indicates the atomic ratio of N in the blackened film, and z indicates the atomic ratio of O in the blackened film.

  By using an oxynitride for the blackening film, the effect of reducing the reflectance can be further enhanced. However, if the atomic ratio of O in the blackening film is excessively increased, the effect of reducing the reflectivity is impaired, and therefore, in the present invention, the range of z is set to 0.03 ≦ z ≦ 0.47.

  Further, the target material used for forming the blackened film according to the present invention is characterized by containing Mo in an amount of 3 to 28 at%, and the balance consisting of Ti and inevitable impurities. By using the titanium alloy target material defined as described above, a blackened film having low reflectance can be easily formed by reactive sputtering.

  According to the present invention as described above, it is possible to provide a laminate including a blackened film having a low reflectance and a target material suitable for forming a blackened film having a low reflectance.

It is a figure showing a layered product of one embodiment of the present invention. It is explanatory drawing which shows the manufacturing procedure of the same laminated body. FIG. 3 is an explanatory diagram illustrating a manufacturing procedure following FIG. 2. FIG. 4 is an explanatory diagram illustrating a manufacturing procedure following FIG. 3. FIG. 5 is an explanatory diagram illustrating a manufacturing procedure following FIG. 4. It is a figure showing a layered product of other embodiments of the present invention. FIG. 4 is a diagram showing a relationship between the atomic ratio x of Mo in the blackening film and the reflectance. FIG. 3 is a diagram illustrating a configuration of a laminate used for evaluation of reflectance.

Next, embodiments of the present invention will be described in detail below.
In FIG. 1, reference numeral 10 denotes a laminate having a function as a thin film transistor (hereinafter, referred to as “TFT”), and includes a gate electrode layer 20 formed on a substrate 18, and a gate insulating layer 22 covering the gate electrode layer 20. A semiconductor layer 24 disposed so as to overlap the gate electrode layer 20 with the gate insulating layer 22 interposed therebetween, and a source electrode layer 26 and a drain electrode layer 28 joined to the semiconductor layer 24.

  The substrate 18 is made of a transparent base material, and may be a glass substrate such as soda lime glass or non-alkali glass, or a resin substrate such as polyethylene terephthalate (PET). The thickness of the substrate 18 is preferably 300 μm to 1 mm from the viewpoint of workability.

  The gate electrode layer 20 can be made of a low-resistance metal material such as Al or Cu. However, since Al alone has problems such as poor heat resistance and easy corrosion, it can be formed in combination with another heat resistant conductive material.

  The gate insulating layer 22 may be a single layer or two or more layers, and may be a conventionally used one such as a silicon oxide film (SiOx film) or a silicon nitride film (SiNx film).

The semiconductor layer 24 can be formed using an oxide semiconductor such as an In-Ga-Zn-based oxide (also referred to as IGZO). An In-Ga-Zn-based oxide means an oxide containing In, Ga, and Zn as its main components and there is no particular limitation on the ratio of In, Ga, and Zn. Further, a metal element other than In, Ga, and Zn may be contained.
Note that the semiconductor layer 24 is not limited to an oxide semiconductor, and for example, amorphous silicon (also referred to as a-Si) can be used.

  The source electrode layer 26 and the drain electrode layer 28 are joined to the semiconductor layer 24, respectively. Specifically, a concave portion 29 is provided between the source electrode layer 26 and the drain electrode layer 28, and the source electrode layer 26 and the drain electrode layer 28 are joined to the semiconductor layer 24 while being separated by the concave portion 29. ing.

  The source electrode layer 26 and the drain electrode layer 28 include a metal layer 32 made of Al, Cu, or an alloy containing them, and a first blackening film 34 provided on a surface of the metal layer 32 on the semiconductor layer 24 side. , A second blackened film 35 provided on the surface of the metal layer 32 opposite to the semiconductor layer 24.

It is desirable that the metal layer 32 be composed of Al alone to reduce the resistance. Generally, Cu is used as an electrode material in addition to Al. Both Al and Cu can be processed by wet etching, but since Cu cannot be processed by dry etching, Al is more versatile. In terms of cost, Al is as inexpensive as about 1/3 of Cu.
When the metal layer 32 is composed of Al alone, it can be formed by non-reactive sputtering using a target material of pure Al. In some cases, the metal layer 32 can be formed of an Al alloy having an Al content of 90 at% or more, or can be formed in combination with a heat-resistant conductive material. The thickness of the metal layer 32 is preferably 10 nm to 1 μm.

The first blackening film 34 and the second blackening film 35 cover the lower surface and the upper surface of the metal layer 32 for the purpose of suppressing light reflection on the surface of the metal layer 32. First blackened layer 34 and the second blackened layer 35 is a nitride of titanium alloy represented by _{(Ti 1-x Mo x)} 1-y N y. x and y each represent an atomic ratio, and satisfy 0.03 ≦ x ≦ 0.28 and 0.40 ≦ y ≦ 0.60. The first blackening film 34 and the second blackening film 35 each include a target material made of a titanium alloy having a predetermined composition, specifically, a target material containing 3 to 28 at% of Mo, with the balance being Ti and unavoidable impurities. It can be formed by reactive sputtering using a material in a mixed gas atmosphere of an inert gas such as Ar and a nitrogen gas.

The compositions of the first blackening film 34 and the second blackening film 35 may be the same or different. If the composition is the same, a common target material can be used.
Note that the thickness of the first blackening film 34 and the second blackening film 35 is preferably 15 to 200 nm.

  The interlayer insulating layer 14 is disposed so as to cover the source electrode layer 26 and the drain electrode layer 28, and in a recess 29 between the source electrode layer 26 and the drain electrode layer 28 so as to be in contact with the channel region 43 of the semiconductor layer 24. Are located. As the interlayer insulating layer 14, a silicon oxide film (SiOx film), a silicon nitride film (SiNx film), or the like can be used like the gate insulating layer 22.

The oxide conductive layer 16 is made of ITO, ZnO, SnO ₂ , IZO, or the like, and is disposed on the interlayer insulating layer 14. When the laminate 10 of the present example functions as a TFT array substrate forming a liquid crystal panel, the oxide conductive layer 16 forms a pixel electrode in a liquid crystal display unit (not shown). The oxide conductive layer 16 is electrically connected to the drain electrode layer 28 through a connection hole 36 formed in the interlayer insulating layer 14, and when the TFT is turned ON / OFF, the oxide conductive layer 16 The start and end of the voltage application are performed.

  In the stacked body 10 configured as described above, the source electrode layer 26 and the drain electrode layer 28 include the metal layer 32 and the blackened films 34 and 35 stacked so as to sandwich the metal layer 32. The reflection of external light on the metal layer 32 can be suppressed.

Next, a manufacturing process of the laminate 10 will be described.
First, a first conductive film is formed on the substrate 18 by a vacuum thin film forming method such as a sputtering method or a vapor deposition method, and the first conductive film is patterned and formed from Al or the like as shown in FIG. The gate electrode layer 20 is formed.

When the gate electrode layer 20 is formed by patterning the first conductive film, the surface of the substrate 18 is exposed except for the portion where the gate electrode layer 20 is located. As shown in FIG. 2B, a gate insulating layer 22 such as SiO ₂ or SiNx is formed on the surface of the substrate 18 and the gate electrode layer 20.

  Next, as shown in FIG. 2C, a semiconductor thin film is formed on the gate insulating layer 22 and then patterned to form a semiconductor layer 24 made of the patterned semiconductor thin film. For example, an oxide semiconductor layer including an In-Ga-Zn-based oxide containing In, Ga, and Zn at a predetermined ratio is formed.

Next, as shown in FIGS. 3A, 3B, and 3C, the surface of the semiconductor layer 24 and the surface of the gate insulating layer 22 that are exposed at locations other than the portion where the semiconductor layer 24 is located These are laminated in the order of one blackening film 34a, second conductive film 32a, and second blackening film 35a.
The first blackening film 34a is formed by reacting a stacked body manufactured up to the state shown in FIG. 2C with a target material of a titanium alloy having a predetermined composition and a mixed gas containing nitrogen gas as a sputtering gas. It is formed by sputtering.

  Next, by using a target material mainly containing Al and performing nonreactive sputtering using a gas that is nonreactive with the target material as a sputtering gas, the second conductive film 32a is illustrated in FIG. Thus, it is formed on the surface of the first blackening film 34a.

  Next, using a target material made of a titanium alloy having a predetermined composition, the second blackening film 35a is formed by reactive sputtering using a mixed gas containing nitrogen gas as a sputtering gas, as shown in FIG. , On the surface of the second conductive film 32a. Thus, a laminated film 30a including the first blackened film 34a, the second conductive film 32a, and the second blackened film 35a is formed.

Thereafter, as shown in FIG. 4A, a resist 38 is formed on the non-removed portion of the laminated film 30a, and in this state, the laminated body including the laminated film 30a is immersed in an etching solution to remove the resist of the laminated film 30a. At 38, the unmasked portions are partially removed. After that, when the resist 38 is removed, as shown in FIG. 4B, the source electrode layer 26 and the drain electrode layer 28 having the first blackened film 34, the metal layer 32, and the second blackened film 35 are formed. Is done.
As described above, the first blackening film 34 and the second blackening film 35 of the present example can be formed together with the metal layer 32 by conventional wet etching or dry etching.

  In FIG. 4B, a channel region 43 is formed between the source region 41 and the drain region 42 of the semiconductor layer 24, and the gate electrode layer 20 is located at a position facing the channel region 43 with the gate insulating layer 22 interposed therebetween. . In this state, the semiconductor layer 24, the gate insulating layer 22, and the gate, source, and drain electrode layers 20, 26, and 28 constitute a TFT.

Next, as shown in FIG. 5A, an interlayer insulating layer 14 made of SiNx, SiO ₂ or the like is formed. At the same time, a connection hole 36 (see FIG. 1) is formed in a predetermined portion of the interlayer insulating layer 14. After that, as shown in FIG. 5B, a third conductive film such as ITO is formed on the surface of the interlayer insulating layer 14 and then patterned to form the oxide conductive layer 16.

  The configuration of the laminate 10 and the method of manufacturing the same according to one embodiment of the present invention have been described above. However, the configuration of the laminate 10 and the method of producing the laminate 10 can be appropriately changed. For example, in the laminated body 10, the blackening films are provided on the source / drain electrodes 26 and 28. However, in some cases, the blackening films can be formed above and below the gate electrode 20 shown in FIG. is there. Further, it is possible to form a blackened film only on the upper side of the gate electrode 20 and the source / drain electrodes 26 and 28, or to form the blackened film only on the lower side of the gate electrode 20 and the source / drain electrodes 26 and 28. It is also possible to form.

In the above-described embodiment, the first blackening film 34 and the second blackening film 35 are made of a nitride of a titanium alloy. However, these blackening films 34 and 35 are made of (Ti _1-x Mo _x ) _1. it is also possible to construct in _-YZ N _y O oxynitride of titanium alloy represented by _Z. x, y, and z each represent an atomic ratio, and satisfy 0.03 ≦ x ≦ 0.28, 0.10 ≦ y ≦ 0.60, and 0.03 ≦ z ≦ 0.47. Such an oxynitride can be formed by reactive sputtering in a mixed gas atmosphere containing nitrogen gas and oxygen gas using a target material made of a titanium alloy having a predetermined composition.

FIG. 6 shows a laminate according to another embodiment of the present invention.
In FIG. 6A, reference numeral 50A denotes an example of a laminate used as a touch panel sensor. In the figure, reference numeral 52 denotes a transparent base material, and a metal layer 54 for forming an electrode is laminated on one surface (the upper surface in the drawing) of the base material 52 over the entire surface of the base material 52. A blackening film 56 is formed on the surface of the metal layer 54 opposite to the substrate 52, that is, on the upper surface in the drawing. The blackening film 56 is also formed in a film shape over the entire surface of the metal layer 54.

The blackening film 56 in this example is a nitride of a titanium alloy represented by (Ti _1-x Mo _x ) _1-y N _y . Here, x and y each indicate an atomic ratio, and satisfy 0.03 ≦ x ≦ 0.28 and 0.40 ≦ y ≦ 0.60. Further, the blackening film 56 can be made of a titanium alloy oxynitride represented by (Ti _1-x Mo _x ) _1-yZ N _y O _Z. Here, x, y, and z each indicate an atomic ratio, and satisfy 0.03 ≦ x ≦ 0.28, 0.10 ≦ y ≦ 0.60, and 0.03 ≦ z ≦ 0.47.

The laminate 50A is actually processed and used as an element of a touch panel sensor. Reference numeral 50 denotes a laminated body after the processing.
In the stacked body 50 after the processing, an excess portion of the film-like metal layer 54 in the stacked body 50A before the processing is removed, and only a large number of ultrafine wires S1 are left as the metal layer 54. The extra fine lines S1 are parallel to each other to form a striped pattern electrode 54D.
An extra portion of the blackening film 56 is also removed, and only the portion of the ultrafine line S1 covering the upper surface in the drawing remains as the ultrafine line S2, which reflects light incident on the upper surface of the ultrafine line S1 in the drawing. Work to reduce the
Note that the laminates 50A and 50 in FIG. 6A in this embodiment are both included in the concept of the laminate of the present invention.

  Further, the laminates 20A and 20A shown in FIG. 6B are another example of the laminate in the present embodiment. In the laminates 20A and 20, a blackening film 56 is formed between the metal layer 54 and the transparent base material 52. By doing so, it is possible to suppress the light that is incident upward from below from being reflected downward by the electrode 54D (metal layer 54).

[Example 1]
Next, examples of the present invention will be described in detail below.
In Example 1, as shown in Table 1 below, in the blackened film represented by (Ti _1-x Mo _x ) _1-y N _y , various laminates in which the atomic ratio x of Mo was changed were used. It was manufactured as follows, and the reflectance and the etching property were measured and evaluated by the following methods.

(Production of laminated body of blackening film / metal film / blackening film / substrate)
Using a glass substrate of 100 mm × 100 mm × 1.1 mm as a transparent substrate, first, reactive sputtering was performed to form a first blackened film on the substrate. In the reactive sputtering, a sputtering target made of a TiMo alloy having a different Mo ratio is used, the degree of vacuum is set to 5 × 10 ^{−4 to} 5 × 10 ⁻⁵ Pa, and a mixed gas having a nitrogen gas ratio of 80% or more is introduced into the chamber. Then, the sputtering pressure was set to 0.1 to 1.5 Pa and the electric power was set to 100 to 500 W. Thus, a blackened film having a thickness of 100 nm was formed.
Next, a metal film made of Cu was formed on the blackened film by non-reactive sputtering. Non-reactive sputtering for forming a metal film was performed by setting the degree of vacuum to 5 × 10 ^{−4 to} 5 × 10 ⁻⁵ Pa and introducing Ar gas (inert gas) into the chamber. The sputtering pressure was 0.1 to 1.5 Pa, and the power was 100 to 500 W. Thus, a metal film made of Cu with a thickness of 200 nm was formed.
Next, a second blackened film was formed on the metal film by performing reactive sputtering. The conditions for film formation are the same as those for the first blackened film.
In this manner, the structure in which the first blackening film, the metal film, and the second blackening film are laminated in this order on the transparent base material, that is, the blackening film / metal film / blackening film / base film shown in FIG. A laminate of the material was obtained.

(Evaluation of reflectance)
Using the laminate of the blackened film / metal film / blackened film / substrate prepared as described above, the reflectance was measured in accordance with JIS K 7105. Specifically, the reflectance of visible light (wavelength: 400 to 780 nm) was measured for each wavelength of 1 nm using an ultraviolet-visible spectrophotometer, and the average value was calculated. As shown by the arrow in FIG. 8, the measurement of the reflectance is the measurement of the reflected light when the base material side is viewed from the metal film side, that is, when the light is incident on the base material side from the metal film side. The reflected light was measured and evaluated according to the following evaluation criteria. Table 1 shows the results.
：: reflectance is less than 25% ×: reflectance is 25% or more

(Wet etching evaluation)
In the wet etching property evaluation, a sample of 5 cm square was cut out from the blackened film / substrate laminate before the metal film was formed, and this sample was immersed in an etchant Pure Etch TE manufactured by Hayashi Junyaku Kogyo. The time until the blackened film formed above was completely dissolved was measured, and the etching rate (nm / min) was obtained and evaluated according to the following evaluation criteria. Table 1 shows the results.
：: Etching rate is 70 nm / min or more ×: Etching rate is less than 70 nm / min

In the results of Table 1, No. The laminate of No. 1 does not contain Mo, and has a blackened film made of TiN. No. In the laminate of No. 1, both the evaluation of the reflectance and the evaluation of the wet etching property were “×”.
On the other hand, No. 2 in which Mo was contained in the blackened film at 32 at% or more. 6 and No. 6 The laminate of No. 7 was evaluated as good in wet etching properties, but had a high reflectivity of more than 25%, and was evaluated as poor in reflectivity.

  On the other hand, No. 1 provided with the blackened film having the composition specified in the present invention. 2-No. For the laminate of No. 5, good results were obtained in both the reflectance and the wet etching property. FIG. 7 shows the relationship between the atomic ratio x of Mo in the blackening film and the reflectance.

  Table 1 also shows the evaluation of the dry etching property for reference. All the blackening films shown in Table 1 were dry-etchable.

[Example 2]
Using a titanium alloy of Ti _0.92 Mo _0.08 as a target material for the blackening film, a laminate of a blackening film / metal film / blackening film / base material was produced in the same procedure as in Example 1 above. However, here, as shown in Table 2, the laminated body was manufactured by changing the amount of nitrogen gas in the mixed gas when forming the blackened film, the composition of the blackened film was investigated, and the reflectance was measured. . Table 2 shows the results.

  According to the results in Table 2, in order to achieve the target reflectance of less than 25%, it is necessary to contain N in the blackened film in an amount of 40 at% or more. In this example, by setting the amount of nitrogen gas in the mixed gas at the time of film formation to 80% or more, N in the blackened film could be made 40 at% or more.

[Example 3]
Using a target material of Ti alone or a titanium alloy as a target material for the blackening film, a laminate of a blackening film / metal film / blackening film / base material was produced in the same procedure as in Example 1 above. However, here, as shown in Tables 3 and 4, the laminated body was manufactured by changing the ratio of the amount of nitrogen gas to the amount of oxygen gas in the mixed gas when forming the blackened film, and the composition of the blackened film was changed. And the reflectance was measured. In addition, the wet etching property and the dry etching property are also evaluated. The results are shown in Tables 3 and 4.
The description of Ti-4Mo in Table 3 indicates that the composition of the target material is Ti _0.96 Mo _0.04 , and the description of Ti-8Mo indicates that the composition of the target material is Ti _0.92 Mo _0.08 . .

According to the results in Tables 3 and 4, the case using the target composed of Ti alone (see Nos. 21 and 22) and the case using the target with high Mo ratio (Ti-32Mo) (see Nos. 57 to 62) ) Did not reach the target (reflectance less than 25%).
On the other hand, when attention is paid to a laminate manufactured using a common target material (for example, see Nos. 23 to 29 in Table 3), the reflectance decreases as the amount of O contained in the blackened film increases. Therefore, the effect of including O in the blackened film is recognized. However, when the content exceeds an appropriate amount, the reflectance is conversely high. To achieve the target reflectance of less than 25%, O is less than 47 at% (and N is 10 to 60 at%). ) Is effective.

  The embodiments and examples of the present invention have been described in detail above, but this is merely an example. For example, the laminate of the present invention can be used in a display device including an organic EL as well as a liquid crystal panel and a touch panel, and the present invention can be implemented in variously modified aspects without departing from the gist thereof. It is.

10, 50, 50A, 60, 60A, laminate 18, 52 Base material 32, 54 Metal layer 34, 35, 56 Blackening film

Claims (3)

A transparent substrate,
A metal layer laminated on the base material to form an electrode and / or wiring,
Having at least a surface of the metal layer opposite to the base material, or a blackened film laminated between the metal layer and the base material,
The blackened film is composed of a nitride of titanium alloy represented by (Ti _1-x Mo _x ) _1-y N _y and unavoidable impurities, x and y each represent an atomic ratio, and 0.03 ≦ x ≦ A laminate characterized by satisfying 0.28, 0.40 ≦ y ≦ 0.60. A transparent substrate,
A metal layer laminated on the base material to form an electrode and / or wiring,
Having at least a surface of the metal layer opposite to the base material, or a blackened film laminated between the metal layer and the base material,
The blackened film is composed of an oxynitride of titanium alloy represented by (Ti _1-x Mo _x ) _1-yZ N _y O _z and unavoidable impurities, x, y, and z each represent an atomic ratio; 0.03 ≦ x ≦ 0.28, 0.10 ≦ y ≦ 0.60, and 0.03 ≦ z ≦ 0.47. A target material used for forming the blackened film according to claim 1 or claim 2,
A target material comprising 3 to 28 at% of Mo, with the balance being Ti and unavoidable impurities.

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