JP2020020661A - Semiconductor device inspection jig - Google Patents

Abstract

To provide an inspection jig for inspecting semiconductor devices, etc., having an I/O conversion function, capable of transmitting/receiving a signal of 10 GHz or higher, and equipped with electrodes at a narrow pitch of a 250 μm or less.SOLUTION: Provided is an inspection jig having a plurality of probes 1G, 1S provided at positions corresponding to inspection electrodes 51G, 51S in holders between a semiconductor device 50 and a high-frequency substrate. The inspection jig is constructed so that one or both of contact pins held by the probes 1G, 1S are movable, the holders are constituted by a semiconductor device-side holder 13 having an open hole through which the contact pin is inserted, and a high-frequency substrate-side holder 12 having an open hole through which the contact pin is inserted. The interval between the holders 12, 13 is composed of the probes 1G, 1S, an air space 9 provided in the periphery of the probes 1G, 1S, and a conductor ground layer 7 provided in other than the probes 1G, 1S and the air space 9, and is constituted so that each contact pin held by the probe 1G, 1S fits within the open hole at inspection time.SELECTED DRAWING: Figure 4

Description

  The present invention relates to a jig for inspecting a semiconductor device, and more particularly, to inspect a semiconductor device having an I / O conversion function, capable of transmitting and receiving signals of 10 GHz or more, and having a narrow pitch electrode of 250 μm or less. Inspection jig.

  In the inspection of a semiconductor integrated circuit, a predetermined signal is simultaneously input to integrated circuits in a plurality of chips on a semiconductor substrate, and a normal operation / abnormality of an output signal at this time is simultaneously inspected to confirm a collective operation. . As an inspection device for that purpose, for example, an alignment device described in Patent Document 1 has been proposed. This alignment apparatus is an apparatus capable of accurately aligning a probe terminal provided on a probe sheet with an inspection electrode formed on a semiconductor wafer. More specifically, two alignment marks are formed near the outer periphery of the semiconductor substrate, two alignment marks are also formed on the probe substrate, and the positions of these alignment marks are detected to measure the amount of positional deviation. ing. The inspection board is provided with two through holes for detecting the alignment mark, and one CCD camera is installed above each of the two through holes. Each CCD camera images the alignment mark of the semiconductor substrate and the alignment mark of the probe substrate one by one through the through hole of the inspection substrate, measures the displacement amount using the captured image, and furthermore, the measurement result The position of the substrate mounting table is adjusted based on the above, so that the alignment and contact between the inspection electrode and the probe of the semiconductor substrate are performed.

  2. Description of the Related Art In recent years, there has been a demand for a semiconductor inspection device that can handle a large variety of small-scale products of semiconductor integrated circuits. Patent Document 2 proposes a small-sized substrate inspection device that solves the problems (inferior in accuracy, in-situ observation, and price) when a conventional semiconductor inspection device as in Patent Document 1 is used as it is. The small substrate inspection device has high positioning accuracy and contact accuracy between the inspection electrode and the probe in the integrated circuit of the small semiconductor substrate, and can inspect while observing the state of the entire processing substrate on the spot. An inexpensive and small-sized substrate inspection device, which is used to align an integrated circuit and a probe substrate provided with probe terminals to be brought into contact with electrodes of the integrated circuit. This is a technique in which a plurality of first alignment marks provided and a plurality of second alignment marks provided on a probe substrate are imaged by a camera and aligned.

  In such a semiconductor inspection apparatus, the position of the fixed semiconductor device electrode and the inspection jig probe is adjusted by moving the inspection jig over the semiconductor device and using a mark (unused electrode or circuit) on the semiconductor device. The position with respect to the inspection jig is moved little by little (in the XYZθ direction) while visually confirming (a single image from a camera) a pattern or the like, and is adjusted.

  By the way, in the current semiconductor device, speeding up such as transmission and reception of a high frequency signal of 10 GHz or more is progressing, and a transmission line of an inspection jig for extracting and inspecting an electric signal also needs to be impedance-matched. Some semiconductor devices have a plurality of light receiving elements, light emitting elements, and electric signal electrodes for an I / O conversion function. In such a semiconductor device inspection, light is transmitted between the light receiving elements and the light emitting elements. Sending and receiving signals. In addition, miniaturization of semiconductor devices has been further advanced, and in recent years, the size has been reduced to 5 mm square or less, and the electrode pitch has been reduced to 250 μm or less, and the pitch has been narrowed.

  As a technique corresponding to the narrow pitch, Patent Document 3 discloses that even if the electrode density of the semiconductor device is increased, it is possible to easily cope with the narrow pitch in the arrangement of the contact terminals and to achieve impedance matching. A possible semiconductor device socket has been proposed as a semiconductor device inspection jig. In the semiconductor device socket, an annular gap (air) is provided between an end of an electrically insulating adapter and an inner surface of an electrically insulating lower housing in a cell of a metal upper housing corresponding to a signal line. Area) is formed around the sleeve of the contact terminal having the same configuration as each other, and in the cell corresponding to the ground line, the contact portion of the contact terminal is inserted into the through hole of the lower housing, and the contact portion is connected to the cell. Is inserted into the small-diameter hole of the conductive collar which is in contact with the inner surface of.

JP 2000-164655 A JP-A-2005-82587 JP 2012-98219 A

  However, in the technique of Patent Document 3, a change point in characteristic impedance occurs due to a difference in dielectric constant between an adapter having electrical insulation around a contact terminal and a gap (air region), and in a frequency band exceeding 10 GHz. This causes attenuation due to reflection. Further, it is difficult to match the characteristic impedance with a coaxial probe for a narrow pitch electrode of 250 μm or less.

  SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a semiconductor device having an I / O conversion function, capable of transmitting and receiving signals of 10 GHz or more, and having a narrow pitch electrode of 250 μm or less. An object of the present invention is to provide an inspection jig for inspecting a device or the like.

An inspection jig for a semiconductor device according to the present invention is used for inspecting electrical characteristics of a semiconductor device that transmits and receives a high-frequency signal, and includes a plurality of probes provided at positions corresponding to electrodes for inspecting the electrical characteristics. An inspection jig held by a holder between the substrate and the high-frequency substrate,
The probe has a semiconductor device-side contact pin, a spring, and a high-frequency substrate-side contact pin in a conductor tube in that order, and has a structure in which one or both of the semiconductor device-side contact pin and the high-frequency substrate-side contact pin are movable. ,
The holder comprises a semiconductor device-side holder having a through-hole into which the semiconductor device-side contact pin is inserted, and a high-frequency substrate-side holder having a through-hole into which the high-frequency substrate-side contact pin is inserted. Between the probe and the high-frequency substrate-side holder, the probe, an air space provided around the probe, and a conductor ground layer provided other than the probe and the air space, each penetrating Each of the contact pins of the probe fits in the hole at the time of inspection.

  According to the present invention, one or both of the contact pins constituting the probe are movable, and each of the contact pins is accommodated in the through-hole at the time of inspection when the contact pin is in contact with the electrode. The characteristic impedance does not change due to the difference in the dielectric constant between the holder and the gap (air region) at the contact portion as in the case where the contact is exposed to the air. Further, a space between the semiconductor device side holder and the high frequency substrate side holder is constituted by a probe, an air space provided around the probe, and a conductor ground (GND) layer provided outside the probe and the air space. Therefore, the air space around the probe facilitates impedance matching, and the conductor GND layer extends along the air space at each probe site. As a result, the characteristic impedance at the probe site can be made constant. As described above, the characteristic impedance at the contact portion where the contact pin is accommodated in the through hole can be reduced, and the characteristic impedance at the probe portion can be kept constant. In particular, attenuation due to reflection in a frequency band exceeding 10 GHz can be reduced. Thus, the amount of attenuation can be reduced.

  In the inspection jig for a semiconductor device according to the present invention, the holder is made of an insulating resin having a dielectric constant in a range of 3.0 to 6.0. According to the present invention, by setting the dielectric constant of the holder within the above range, the characteristic impedance can be adjusted and the overall attenuation can be reduced.

  In the semiconductor device inspection jig according to the present invention, it is preferable that each contact pin has a diameter in a range of 0.05 to 0.1 mm. According to the present invention, it is possible to provide an inspection jig that can cope with narrow pitch electrodes.

  According to the present invention, it is possible to provide an inspection jig having an I / O conversion function, capable of transmitting and receiving signals of 10 GHz or more, and inspecting a semiconductor device or the like having a narrow pitch electrode of 250 μm or less. By using this inspection jig, a change in the characteristic impedance can be suppressed, the characteristic impedance at the probe portion can be made constant, and the occurrence of attenuation due to reflection can be suppressed.

FIG. 2 is a schematic view showing an example of a semiconductor device inspection jig according to the present invention. FIG. 2 is a schematic view illustrating a mode in which a semiconductor device-side holder is arranged and aligned on a semiconductor device in the inspection jig of FIG. 1. FIG. 3A is an overall view showing an example of a probe, and FIG. It is an explanatory view of an inspection jig used in the present invention. It is an explanatory view of a conventional inspection jig.

  An inspection jig for a semiconductor device according to the present invention will be described with reference to the drawings. The present invention can be modified or applied within the scope of the gist, and is not limited to the following embodiments. The “inspection jig” of the present invention may be rephrased as “inspection component”.

[Inspection jig for semiconductor device]
As shown in FIGS. 1 to 4, a semiconductor device inspection jig 10 (simply referred to as an “inspection jig”) according to the present invention is used for inspecting electrical characteristics of a semiconductor device 50 that transmits and receives high-frequency signals. An inspection jig 10 in which a plurality of probes 1 provided at positions corresponding to electrodes 51 whose electrical characteristics are to be inspected are held in a holder 14 between a semiconductor device 50 and a high-frequency substrate 11.

  The probe 1 has a semiconductor device-side contact pin 2A, a spring 5, and a high-frequency board-side contact pin 2B in the conductor tube 4 in that order, and has a structure in which one or both of the contact pins 2A and 2B are movable. . The holder 14 includes a semiconductor device side holder 13 having a through hole for inserting the semiconductor device side contact pin 2A, and a high frequency substrate side holder 12 having a through hole for inserting the high frequency substrate side contact pin 2B. The space between the semiconductor device-side holder 13 and the high-frequency substrate-side holder 12 is the probe 1, the air space 9 provided around the probe 1, and the conductor ground (other than the probe 1 and the air space 9). GND) layer 7 so that each contact pin 2A, 2B of the probe 1 fits into each through-hole at the time of inspection.

  In this inspection jig 10, one or both of the contact pins 2A and 2B constituting the probe 1 move, and the contact pins 2A and 2B come into contact with the electrodes (the electrodes 51 of the semiconductor device and the electrodes of the high-frequency board). The characteristic impedance changes due to the difference in the dielectric constant between the holder and the gap L (air region) at the contact portion, such as when the electrode is exposed to the electrode side instead of being accommodated in the through hole at the time of inspection because it fits in the through hole during inspection. No points occur. Further, between the holders 14 (12, 13), the probe 1, the air space 9 provided around the probe 1, and the conductor GND layer 7 provided outside the probe 1 and the air space 9 are formed. Therefore, the air space 9 around the probe facilitates impedance matching, and the conductor GND layer 7 extends along the air space 9 at each probe site. As a result, the characteristic impedance at the probe site can be made constant. As described above, the characteristic impedance at the contact portion where the contact pins 2A and 2B are accommodated in the through holes can be reduced, and the characteristic impedance at the probe portion can be made constant. In particular, attenuation due to reflection in a frequency band exceeding 10 GHz can be achieved. And the amount of attenuation can be reduced.

  Hereinafter, each component will be described in detail.

(Semiconductor device)
As shown in FIG. 1, the semiconductor device 50 is an inspection target of the inspection jig 10 according to the present invention. The semiconductor device 50 is not particularly limited as long as it has an I / O conversion function, can transmit and receive signals of 10 GHz or more, and has a narrow pitch electrode of 250 μm or less. Specifically, a device having an I / O conversion function in which a light receiving element, a light emitting element, an electric signal electrode, and the like are arbitrarily provided on the same surface can be preferably cited. The semiconductor device 50 is driven at a high frequency of 10 GHz or more, and transmits and receives optical signals between the light receiving element and the light emitting element. In addition, miniaturization is further advanced, and the inspection can be preferably performed on a device having a narrow pitch electrode having a size of 5 mm square or less, an electrode pitch of 250 μm or less, and further 150 μm or less.

  As an example, there is a semiconductor device 50 that receives an optical signal of 100 Gbps and transmits the signal as an electrical signal of 4 lines at 25 Gbps. The semiconductor device 50 may include, for example, a device having a plurality of light receiving elements 52 each having a size of 5 mm square or less and having a plurality of electrodes 51 for transmitting electric signals on the same surface at a pitch of 150 μm.

(High frequency substrate)
As shown in FIG. 1, the high-frequency substrate 11 constitutes an inspection jig 10 which is joined to and integrated with a holder 14 (high-frequency substrate-side holder 12 and semiconductor device-side holder 13) for fixing the position of the probe 1. . The high-frequency substrate 11 is provided at a position opposite to the semiconductor device 50 with the holder 14 interposed therebetween.

  The high-frequency substrate 11 is used for inspection of the semiconductor device 50, has a GND layer on one surface (also called a back surface) and a circuit on the other surface (also called a front surface) for impedance matching. It is a substrate having a pattern and capable of high-frequency transmission. The high-frequency substrate 11 has an insulating layer provided between the circuit pattern on the front surface and the GND layer on the rear surface. As the insulating layer, for example, a fluorine-based insulating material having a low dielectric constant (such as PFA) can be given, and the thickness is not particularly limited. The pitch of the circuit pattern of the high-frequency substrate 11 is not particularly limited, either. For example, 250 μm or less, and further 150 μm or less can be used in response to recent miniaturization and integration. For example, when the pitch of the circuit pattern is 150 μm, the configuration can be such that the conductor width is 70 μm and the distance between the conductors is 80 μm for precise wiring.

  Since the high-frequency substrate 11 has a high-density circuit pattern wiring on the front surface and a GND layer on the rear surface, no hole is formed at the position where the GND layer is provided. There is no space to open. However, in this high-frequency substrate 11, a hole similar to the hole 20 of the semiconductor device side holder 13 in FIG. 2 is formed while maintaining the impedance of the transmission line. The hole is formed at a position including the light receiving element 52 of the semiconductor device 50, and the light receiving element can receive an optical signal emitted from an optical fiber (not shown) on the side of an inspection device (not shown). Further, as shown in FIG. 1, while observing the image obtained by the imaging device 40, the marks 53 and 54 on the semiconductor device and the notch 21 provided at least in the semiconductor device side holder 13 shown in FIG. The position of the semiconductor device 50 and the inspection jig 10 are aligned by visually or imaging and the position is adjusted, and the electrode 51 of the semiconductor device 50 and the probe 1 of the inspection jig 10 are aligned. Can be contacted.

  The circuit pattern provided on the front surface of the high-frequency substrate 11 includes a circuit pattern connected to the probe 1 and a GND pattern connected to the GND layer on the back surface by a via (connected to the inner periphery of the through hole by plating). It is configured. In the high-frequency substrate 11, the circuit pattern near the electrode that contacts the probe 1 has a small width, but if the circuit pattern is changed to increase the width, the impedance changes. Therefore, the impedance can be made constant by making the above-mentioned GND pattern follow the circuit pattern whose width has changed.

(High frequency substrate side holder)
As shown in FIG. 1, the high-frequency substrate-side holder 12 is a holder located on the high-frequency substrate side among holders 14 (the high-frequency substrate-side holder 12 and the semiconductor device-side holder 13) for fixing the position of the probe 1.

  As shown in FIG. 4, the high-frequency substrate-side holder 12 has a through hole 12a into which the high-frequency substrate-side contact pin 2B constituting the probe 1 is inserted. The size and pitch of the through hole 12a are not particularly limited, but are formed in consideration of the diameter of the probe 1, the diameter of the high-frequency board side contact pin 2B, and the size and pitch of the electrode to be inspected. The high-frequency substrate-side holder 12 is installed at a certain distance from the semiconductor device-side holder 13. This makes it easier to achieve appropriate impedance matching.

  The high-frequency substrate side holder 12 may be formed of a resin material selected in consideration of workability, insulation, dielectric constant, and the like. For example, from the viewpoint of dielectric constant adjustment, processing accuracy and workability, a resin having a high processing accuracy such as a polyester resin can be employed, and from the viewpoint of reducing the dielectric constant, a resin such as a fluorine resin material can be employed. Impact on the vehicle can be reduced. A preferred example is a wholly aromatic polyester resin (with a dielectric constant in the range of 3.0 to 6.0) which emphasizes processing accuracy for impedance matching. By employing the polyester resin, the characteristic impedance can be adjusted to reduce the overall attenuation. In order to minimize the reflection characteristics, it is desirable that the thickness is small.

  The high-frequency substrate-side holder 12 and the semiconductor device-side holder 13 are installed with an air space 9 at a fixed distance. As will be described later, in the present invention, since a dielectric is eliminated around the probe 1 for impedance matching, it is appropriate to set a constant distance between the high-frequency substrate-side holder 12 and the semiconductor device-side holder 13 so as to be appropriate. Impedance matching can be realized.

  A hole similar to the hole 20 of the semiconductor device side holder 13 of FIG. 2 is formed in the high frequency substrate side holder 12. The hole is formed at a position including the light receiving element 52 of the semiconductor device 50, and the light receiving element can receive an optical signal emitted from an optical fiber (not shown) on the side of an inspection device (not shown). Further, as shown in FIG. 1, while observing the image obtained by the imaging device 40, the marks 53 and 54 on the semiconductor device and the notch 21 provided at least in the semiconductor device side holder 13 shown in FIG. The position of the semiconductor device 50 and the inspection jig 10 are aligned by visually or imaging and the position is adjusted, and the electrode 51 of the semiconductor device 50 and the probe 1 of the inspection jig 10 are aligned. Can be contacted. The notch in the hole 20 is provided at least in the semiconductor device-side holder 13, but may not be provided in the high-frequency substrate-side holder 12, or may be provided as needed.

  The high-frequency substrate-side holder 12 may be provided with a dug portion similar to the semiconductor device-side holder 13 described later. By doing so, the high-frequency substrate-side holder 12 can be made thin.

(Semiconductor device side holder)
As shown in FIGS. 1 and 4, the semiconductor device side holder 13 is a holder located on the semiconductor device side among holders 14 (the high frequency substrate side holder 12 and the semiconductor device side holder 13) for fixing the position of the probe 1. is there.

  As shown in FIG. 4, the semiconductor device side holder 13 has a through hole 13a into which the semiconductor device side contact pin 2A constituting the probe 1 is inserted. The size and pitch of the through hole 13a are not particularly limited, but are formed in consideration of the diameter of the probe 1, the diameter of the semiconductor device side contact pin 2A, and the size and pitch of the electrode 51 of the semiconductor device 50 to be inspected. I have. The semiconductor device-side holder 13 is provided at a certain distance from the high-frequency substrate-side holder 12 in order to easily realize appropriate impedance matching. For example, the high-frequency substrate-side holder 12 and the semiconductor device-side holder 13 are fixed via a plate 15 having a rectangular shape when viewed from above, and the high-frequency substrate-side holder 12 and the semiconductor device-side holder 13 are fixed. Is configured to have a constant space distance.

  Similarly to the high-frequency substrate-side holder 12, the semiconductor device-side holder 13 may be formed of a resin material selected in consideration of workability, insulation, dielectric constant, and the like. For example, from the viewpoint of dielectric constant adjustment, processing accuracy and workability, a resin having a high processing accuracy such as a polyester resin can be employed, and from the viewpoint of reducing the dielectric constant, a resin such as a fluorine resin material can be employed. Impact on the vehicle can be reduced. A preferred example is a wholly aromatic polyester resin (with a dielectric constant in the range of 3.0 to 6.0) which emphasizes processing accuracy for impedance matching. By employing the polyester resin, the characteristic impedance can be adjusted to reduce the overall attenuation. In order to minimize the reflection characteristics, it is desirable that the thickness is small.

  The semiconductor device side holder 13 is provided with a hole 20 for transmitting and receiving an optical signal. In the semiconductor device-side holder 13, as shown in FIG. 2, a notch 21 for a hole 20 is provided. The notch 21 is provided in the semiconductor device-side holder 13 located closest to the marks 53 and 54 on the semiconductor device so as to correspond to the marks 53 and 54. By doing so, visual confirmation is easy and the focus of the imaging device (camera) 40 is most easily adjusted, which is the most effective in enabling accurate positioning. The size of the hole 20 provided in the semiconductor device side holder 13 is smaller than the holes provided in the high frequency substrate 11 and the high frequency substrate side holder 12. By doing so, the notch 21 provided in the semiconductor device-side holder 13 can be easily observed visually or by the imaging device 40 from the high-frequency substrate side.

  The semiconductor device-side holder 13 needs to have a mechanical strength necessary for assembling into the inspection jig 10. In order to secure the mechanical strength, the semiconductor device-side holder 13 has a certain thickness ( 1.15 mm or more). However, if the thickness becomes too thick, when imaging the notch 21 of the semiconductor device side holder 13 and the marks 53 and 54 on the semiconductor device from the imaging device (camera) 40 on the high frequency substrate side, the semiconductor device side holder Since the distance between the surface 13 on the high-frequency substrate side and the marks 53 and 54 on the semiconductor device becomes large, it is impossible to focus on both at the same time. Therefore, it is preferable to provide a dug portion 18 for thinning the surface of the semiconductor device side holder 13 on the high frequency substrate side. With the dug portion 18, the above-described distance can be shortened, and focusing can be facilitated. Also, a dug portion 17 may be provided on the surface on the semiconductor device side for mounting the semiconductor device 50 as necessary, and the thickness of the central portion can be further reduced.

(probe)
As shown in FIG. 1, the probe 1 is used for inspecting the electrical characteristics of a semiconductor device 50 that transmits and receives a high-frequency signal, and is provided at a position corresponding to an electrode 51 for inspecting the electrical characteristics. As shown in FIG. 4, the plurality of probes 1 are held by holders 14 between the semiconductor device 50 and the high-frequency substrate 11 (the high-frequency substrate-side holder 12 and the semiconductor device-side holder 13).

  Each of the probes 1 is not limited to the example of FIGS. 3A and 3B, but includes a semiconductor device side contact pin 2 </ b> A, a spring 5, and a high frequency substrate side contact pin 2 </ b> B in the conductor tube 4 in that order. I have. Of the contact pins 2A and 2B, one contact pin 2A has a tip 2a in contact with the electrode 51 of the semiconductor device 50, and the other contact pin 2B has a tip 2b in contact with or joined to an electrode of the high-frequency substrate 11. The spring 5 is an elastic member located between the contact pins 2A and 2B, and the elastic force of the spring 5 causes one or both of the contact pins 2A and 2B to contact the electrode. The term “both or one” means that the semiconductor device-side contact pin 2A moves with the spring 5 and contacts the electrode 51, but the high-frequency substrate-side contact pin 2B does not necessarily have to move with the spring 5, This is because it may be joined to the eleventh electrode.

  The shape, form, material, and the like of the contact pins 2A and 2B and the conductor tube 4 are not particularly limited, and are formed in consideration of the size and pitch of the electrode to be inspected. The material may be a material having good conductivity, and examples thereof include conductive materials such as copper, copper alloy, tungsten, and palladium. The contact pins 2A, 2B and the conductor tube 4 are electrically connected. The spring 5 can be arbitrarily selected according to the shape and form of the contact pins 2A and 2B and the conductor tube 4, and is not particularly limited. The material is not particularly limited, and may or may not have conductivity, but a material that generates a desired elastic force is selected. The spring 5 and the contact pins 2A and 2B are joined at the joint 6 by soldering or caulking. The distance between the air spaces 9 can be regulated by bringing both ends of the conductor tube 4 into contact with the holder 12 on the high-frequency substrate side and the holder 13 on the semiconductor device side. It is desirable.

  Since the distance between the circuit pattern of the high frequency substrate 11 and the GND layer of the probe 1 is determined, the thickness of the probe 1 is limited in order to perform impedance matching. For example, when the pitch of the circuit pattern of the high-frequency board 11 is 250 μm, the diameter of the probe 1 is preferably about 0.09 to 0.12 mm, and the diameter of each of the contact pins 2A and 2B is It is preferable that the distance is in the range of 0.05 to 0.1 mm. Further, it is preferable that the length of the probe 1 is also limited to 5 mm or less so that the semiconductor device 50 does not resonate with a signal of, for example, about 25 Gbps (12.5 GHz).

  The probe 1 has an electric signal electrode probe 1S and a ground electrode probe 1G, but it is preferable that both have the same shape. By doing so, the probe 1 can be shared, and the influence on the characteristic impedance can be minimized.

  Such a probe 1 is held by holders 14 (high-frequency substrate-side holder 12 and semiconductor device-side holder 13) provided on both sides in the longitudinal direction. Each of the holders 12, 13 has already been described. As shown in FIG. 4, each of the holders 12 and 13 has through holes 12a and 13a into which the contact pins 2A and 2B are inserted, and the tips 2a and 2B of the contact pins 2A and 2B are inserted into the through holes 12a and 12b. 2b is inserted, and each probe 1 is positioned. The size of the through holes 12a, 12b is arbitrarily designed according to the diameter of each contact pin 2A, 2B, and is provided with a slightly larger diameter.

  In the present invention, as shown in FIG. 4, the probe 1, the air space 9 provided around the probe 1, the probe 1 and the air space 9 are provided between the semiconductor device-side holder 13 and the high-frequency substrate-side holder 12. And a conductive GND layer 7 provided in addition to the above. In such a configuration, the air space 9 around the probe facilitates impedance matching, and the conductor GND layer 7 extends along the air space 9 at each probe site. As a result, the characteristic impedance at the probe site can be made constant. As described above, the characteristic impedance at the probe portion can be made constant, and in particular, the attenuation due to reflection in a frequency band exceeding 10 GHz can be reduced to reduce the amount of attenuation.

  Of the conductor GND layers 7 shown in FIG. 4, the conductor GND layer 7 disposed around the ground electrode probe 1G is a conductive cylinder (sleeve) integrated with the outer periphery of the ground electrode probe 1G. Alternatively, it may be an electroplating layer provided on the surface of the conductor tube 4 constituting the ground electrode probe 1G. The conductor GND layer 7 arranged on the outer periphery of the electric signal electrode probe 1S via the air space 9 may be a metal pin inserted into an insertion hole separately provided in both holders 12 and 13. It may be a metal piece. The thickness of the conductor GND layer 7 is not particularly limited, but may be about 0.03 to 0.1 mm.

  Further, the present invention is characterized in that each contact pin 2A, 2B is configured to fit in the through hole at the time of inspection in which each contact pin 2A, 2B contacts or joins the electrode 51. As shown in FIG. 4, such an operation can be realized by a structure in which the probe 1 has the spring 5 and is adjusted to have a length that fits in the through hole at the time of contact.

  In the example of the structure shown in FIG. 4, the semiconductor device 50 and the semiconductor device 50 when the semiconductor device 50 and the semiconductor device side holder 13 approach each other and the contact pin tip 2a '(shown by a broken line) and the electrode 51 first contact each other. A gap L with the side holder 13 remains. Thereafter, when the semiconductor device 50 further approaches the semiconductor device side holder 13, the contact pin tip 2a (shown by a solid line) is accommodated in the through hole by the spring 5, and the electrode 51 and the semiconductor device side holder 13 contact each other. The gap L disappears due to the contact. By eliminating such a gap L, the permittivity between the holder 13 and the gap L (air region) at the contact portion as in the conventional example shown in FIG. No change point of the characteristic impedance occurs due to the difference in As a result, in the present invention, it is possible to reduce the characteristic impedance at the contact portion where the contact pins 2A and 2B are accommodated in the through holes, and as a result, to reduce the attenuation due to reflection particularly in a frequency band exceeding 10 GHz. The amount can be reduced.

  Also in the high-frequency substrate-side holder 12, similarly to the above, the high-frequency substrate 11 and the contact pin tip 2 b may be brought into contact or joined, and the electrode of the high-frequency substrate 11 may be in contact with the high-frequency substrate-side holder 12 to eliminate the gap. Thus, the same effect as described above can be realized.

(Inspection methods)
As shown in FIGS. 1 and 2, the inspection method performed by the inspection jig 10 is to arrange an image pickup device 40 on the high-frequency substrate side and to observe a mark (electrode) on a semiconductor device while viewing an image obtained by the image pickup device 40. 54 and / or the circuit pattern 53) and the notch 21 provided at least in the semiconductor device-side holder 13, and the electrode 51 on the semiconductor device and the probe 1 are aligned. The aligned probe 1 contacts the electrode 51 for inspecting the electrical characteristics of the semiconductor device 50 and accurately inspects the electrical characteristics of the semiconductor device 50.

  Note that the imaging device 40 is not particularly limited, and a CCD camera or the like can be used. The fine adjustment means for positioning is not particularly limited, and can be performed by automatically or manually operating a stage or the like driven in the XYZθ directions. Note that the fine adjustment means is a means usually performed in this field or related fields, and therefore, the description thereof is omitted in the present application.

(Characteristic impedance)
In FIG. 4, the thickness of the high-frequency substrate side holder 12 (dielectric constant 3.24) is 0.2 mm, the gap thickness of the air space 9 (dielectric constant 1.0) is 3.5 mm, and the semiconductor device side holder 13 The thickness of (dielectric constant 3.24) was 0.2 mm, the probe 1 had an outer diameter of 0.11 mm, the contact pin had an outer diameter of 0.09 mm, and the gap L between each electrode and each holder 14 was zero. The conductor GND layer 7 disposed around the ground electrode probe 1G is a metal tube (copper sleeve) having a thickness of 0.05 mm integrated with the outer periphery of the ground electrode probe 1G, and the electric signal electrode probe. The conductor GND layer 7 arranged on the outer periphery of 1S via the air space 9 has a metal piece (copper plate) having a thickness of 0.05 mm arranged at an interval of 0.045 mm from the probe 1.

  The characteristic impedance in the structure shown in FIG. 4 is 99.8 Ω in the high-frequency substrate side holder 12, 79.7 Ω in the air space 9, and 99.8 Ω in the semiconductor device side holder 13. The amount of change was small and the amount of attenuation was small.

  In FIG. 5, the thickness of the high-frequency substrate side holder 12 (dielectric constant 3.24) is 0.2 mm, the gap thickness of the air space 9 (dielectric constant 1.0) is 2.5 mm, and the semiconductor device side holder 13 The thickness of (dielectric constant 3.24) was 0.2 mm, the probe 1 had an outer diameter of 0.11 mm, the contact pin had an outer diameter of 0.09 mm, and the gap L between each electrode and each holder 14 was zero. Also in the structure of FIG. 5, similarly to the case of FIG. 4, the conductor GND layer 7 disposed around the ground electrode probe 1G has a thickness of 0.05 mm integrated with the outer periphery of the ground electrode probe 1G. The conductor GND layer 7 which is a metal cylinder (copper sleeve) and is arranged on the outer periphery of the electric signal electrode probe 1S via the air space 9 is a metal piece (copper plate) having a thickness of 0.05 mm, which is formed from the probe 1 to 0. They were arranged so as to have a spacing of 0.045 mm. On the other hand, the structure of the probe 1 is different from the structure shown in FIG. 4 in that an insulator holder 8 having a thickness of 0.5 mm is further provided at both ends on both holders 12 and 13 side.

  The characteristic impedance of the structure shown in FIG. 5 is 147.1Ω in the high-frequency substrate side holder 12 including the gap L, 57.9Ω in the insulator holder 8 provided in the high-frequency substrate side holder 12, and the air space between the insulator holders. 79.7 Ω, 57.9 Ω for the insulator holder 8 provided on the semiconductor device-side holder 13, and 147.1 Ω for the semiconductor device-side holder 13 including the gap L. The amount was large in each part, and the amount of attenuation was large.

  As described above, according to the present invention, at the time of inspection, one or both of the contact pins 2A and 2B constituting the probe 1 move, and each of the contact pins 2A and 2B becomes an electrode (the electrode 51 of the semiconductor device and the high-frequency wave). The contact pins 2A and 2B fit into the through-holes during the inspection, so that the contact pins 2A and 2B do not fit into the through-holes at the time of inspection and are exposed to the electrode side. A change point in the characteristic impedance due to a difference in the dielectric constant from the gap L (air region) does not occur. As a result, by such an inspection method, it is possible to reduce the characteristic impedance at the contact portion where the contact pins 2A and 2B are accommodated in the through holes, and particularly to reduce the attenuation due to reflection in a frequency band exceeding 10 GHz to reduce the attenuation. Can be smaller.

REFERENCE SIGNS LIST 1 probe 1S probe for electric signal electrode 1G probe for ground electrode 2 probe metal part 2A contact pin on semiconductor device side 2a Contact pin tip at inspection 2a 'Contact pin tip at non-inspection 2B High-frequency substrate contact pin 2b Contact at inspection Pin tip 2b 'Contact pin tip for non-inspection 3 Probe body 4 Conductor cylinder 5 Spring 6 Joint 7 Conductor GND layer 8 Insulator holder 9 Air space 10 Inspection jig 11 High frequency substrate 12 High frequency substrate side holder 12a Through hole DESCRIPTION OF SYMBOLS 13 Semiconductor device side holder 13a Through hole 14 Holder 15 Plate 16 Space 17 Semiconductor device side dug portion 18 High frequency substrate side holder dug portion 20 Hole 21 Notch 40 Image pickup device (camera)
Reference Signs List 50 semiconductor device 51 electrode contacted by probe 52 light receiving element (optical element)
53 Mark (circuit pattern)
54 Marks (electrodes)
55 substrate L gap (air area)

Claims (3)

Inspection in which a plurality of probes provided at corresponding positions of electrodes for inspecting the electric characteristics are held in a holder between the semiconductor device and the high-frequency substrate, which are used for inspection of electric characteristics of a semiconductor device transmitting and receiving a high-frequency signal. Jig,
The probe has a semiconductor device-side contact pin, a spring, and a high-frequency substrate-side contact pin in a conductor tube in that order, and has a structure in which one or both of the semiconductor device-side contact pin and the high-frequency substrate-side contact pin are movable. ,
The holder comprises a semiconductor device-side holder having a through-hole into which the semiconductor device-side contact pin is inserted, and a high-frequency substrate-side holder having a through-hole into which the high-frequency substrate-side contact pin is inserted. Between the probe and the high-frequency substrate-side holder, the probe, an air space provided around the probe, and a conductor ground layer provided other than the probe and the air space, each penetrating The inspection jig for a semiconductor device, wherein each of the contact pins of the probe is accommodated in the hole at the time of inspection.   The inspection jig of a semiconductor device according to claim 1, wherein the holder is made of an insulating resin having a dielectric constant in a range of 3.0 to 6.0. The inspection jig of a semiconductor device according to claim 1, wherein a diameter of each of the contact pins is in a range of 0.05 to 0.1 mm.