JP2020009945A - Method for manufacturing semiconductor device - Google Patents

Abstract

To provide a method for manufacturing a semiconductor device which is small in the nonuniformity of a filler or resin and remarkably small in the variation of a warp quantity.SOLUTION: A method for manufacturing a semiconductor device comprises the steps of: mounting a plurality of semiconductor chips with an adhesive layer containing a thermosetting composition laminated on one face on a substrate or frame to prepare a laminate; hardening an adhesive component in the laminate by a thermal treatment; setting the laminate in a mold and then using an epoxy resin composition as a sealing resin to perform a resin seal by compression molding while keeping the inside of the mold under a reduced pressure; hardening the resin sealed laminate by a thermal treatment; and cutting the resin sealed laminate hardened by the thermal treatment into individual pieces. In the step of performing a resin seal by compression molding, a pressure reduction speed represented by the formula below is set to 10-350 torr/second and the compression molding is performed with the inside of the mold put under a reduced pressure. (Pressure reduction speed)=(Initial pressure - Pressure reduction limit pressure )/(Time for reaching Pressure reduction limit pressure)SELECTED DRAWING: Figure 4

Description

  The present invention relates to a method for manufacturing a semiconductor device.

  In recent years, in order to cope with further miniaturization and weight reduction of electronic devices, the form of packages has been changed from QFP (Quad Flat Package) and SOP (Small Outline Package) to easier to cope with more pins and higher density. It is shifting to an area mounting package such as a BGA (Ball Grid Array) including a CSP (Chip Size Package) that can be mounted. With the increase in speed and the number of functions, the fine pitch, thinner, and longer wires of the wires connecting the chip and the substrate have been developed as packages for miniaturization, miniaturization, and increase in the number of pins. The encapsulation of these packages is mainly transfer molding using an epoxy resin molding material. For narrowing, narrowing, and increasing the length of wires, the epoxy resin molding material has been made highly fluid.

  However, in the conventional transfer molding, since the molten sealing material is poured into the mold by pressure, the wires flow due to the flow of the sealing material, and the wires come into contact with each other, thereby causing a short circuit failure. Although the wire flow is improved by increasing the flow rate of the sealing material, there is a limit to increasing the flow rate of the sealing material, making it difficult to respond to further narrower pitch, thinner wires, and longer wires. It has become to. Therefore, in recent years, compression molding has been studied as a package molding technique replacing the transfer molding. In compression molding, an epoxy resin molding compound for encapsulation is placed directly on a mold, and pressure is applied so that the molten molding material is slowly pressed against the substrate. There is almost no effect on the wire.

  As a technique related to a semiconductor device in which a semiconductor element is sealed by compression molding, a method of performing resin molding by compression molding while reducing the pressure inside a mold (for example, see Patent Document 1), a molding material for sealing is used. A method using a pellet or sheet having a thickness of 3.0 mm or less (see, for example, Patent Document 2), and supplying a fine-grained resin composition to a cavity, melting the resin composition, and forming a semiconductor element. (See, for example, Patent Document 3).

JP 2000-021908 A JP 2006-216899 A JP-A-2004-216558

2. Description of the Related Art In recent years, with the rapid increase in demand for smartphones and tablet PCs, there has been a growing demand for smaller, thinner semiconductor packages as well as higher capacity, higher speed, and lower power consumption of LSIs. Accordingly, the characteristics required for the sealing material have become severe.
One of the issues in the development of the sealing material is that the productivity is deteriorated due to the variation in the amount of package warpage. It is considered that such variation in the amount of warpage is caused by a partial difference in thermal expansion coefficient and contraction rate due to non-uniformity of the filler and resin of the sealing material.
In the compression molding, since the flow of the sealing material is smaller than in the transfer molding, it is possible to relatively reduce the variation in the amount of warpage caused by the non-uniformity of the filler and the resin. However, particularly in a thin package, the unevenness of the filler and resin of the sealing material greatly affects the variation in the amount of warpage, and is insufficient to solve the problem of productivity.
The present invention provides a method of manufacturing a semiconductor device in which non-uniformity of a filler or a resin is small and variation in a warpage amount is extremely small.

The method for manufacturing a semiconductor device according to the present invention relates to the following.
The present invention provides [1] a step of mounting a plurality of semiconductor chips each having an adhesive layer containing a thermosetting component laminated on one surface on a substrate or a frame to prepare a laminate, and heat treating the adhesive component in the laminate by heat treatment. Curing, and after placing the laminate in a mold, using an epoxy resin composition as a sealing resin, while reducing the pressure in the mold under reduced pressure, compression molding and resin sealing; and A method of manufacturing a semiconductor device, comprising: a step of curing a sealing laminate by heat treatment; and a step of separating the resin sealing laminate cured by the heat treatment. In the sealing step, the present invention relates to a method for manufacturing a semiconductor device, characterized in that a mold is compression-molded under reduced pressure at a reduced pressure rate of 10 to 350 torr / sec expressed by the following equation (1).
(Decompression rate) = (Initial pressure-Decompression limit pressure) / (Decompression limit pressure arrival time) Formula (1) The unit of the initial pressure and the decompression limit pressure is “torr”, and the unit of the decompression limit pressure arrival time is “ Second ", and the decompression limit pressure was changed within 5 torr / sec.
According to the present manufacturing method, the sealing resin melted on the mold heated at the time of compression molding is subjected to foaming and stirring by being exposed under reduced pressure. Therefore, it is presumed that filler segregation is suppressed, and it is possible to suppress the warpage variation of the molded product.
The present invention also relates to [2] the method for manufacturing a semiconductor device according to [1], wherein in the step of preparing the stacked body, the temperature at which the semiconductor chip is mounted on the substrate or the frame is 60 to 150 ° C.
The present invention also relates to [3] the method for manufacturing a semiconductor device according to [1] or [2], wherein a heating temperature at which the adhesive component is cured by heat treatment is 100 to 200 ° C.
The present invention also relates to [4] the method for manufacturing a semiconductor device according to any one of [1] to [3], wherein the heating time for curing the adhesive component by heat treatment is 10 to 120 minutes. .
Also, the present invention provides [5] the manufacturing of the semiconductor device according to any one of [1] to [4], wherein a molding temperature for sealing the epoxy resin composition with a resin is 110 to 200 ° C. About the method.
Further, in the present invention, [6] the heating temperature for curing the resin-sealed laminate by heat treatment is 110 to 200 ° C, according to any one of the above [1] to [5]. The present invention relates to a method for manufacturing a semiconductor device.
Further, in the present invention, [7] the individualizing step may be a step of cutting the resin-sealed laminate into a plurality of pieces, and the cutting type is a rotary blade, any one of the above-mentioned [1] to [6]. And a method for manufacturing a semiconductor device described in (1).

  ADVANTAGE OF THE INVENTION According to this invention, filler segregation of the sealing material at the time of compression molding can be suppressed, and even when using a thin package with a substrate thickness of 90 μm and a molding thickness of 360 μm, it is possible to suppress the variation in the amount of warpage in the molded product surface. It is possible to provide a method of manufacturing a semiconductor device which is capable of improving the yield in manufacturing the semiconductor device.

1 is a cross-sectional view of one embodiment of a semiconductor device according to the present embodiment. It is sectional drawing of the semiconductor chip with an adhesive layer. It is sectional drawing which shows the process of mounting the semiconductor chip which laminated | stacked the adhesive layer on one side on a board | substrate, and preparing a laminated body. It is sectional drawing which shows the process of cutting | disconnecting a resin sealing laminated body into several and individualizing. It is a photograph by the ultrasonic imaging diagnostic system which evaluates the dispersibility of a filler.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings as necessary. However, the following embodiments are examples for describing the present invention, and do not limit the present invention to the following contents.

  Hereinafter, a method for manufacturing the semiconductor device having the above-described configuration will be described.

[Semiconductor chip with adhesive layer containing thermosetting component laminated on one surface]
The semiconductor chip used in the present invention is not particularly limited, but is, for example, a silicon chip. The thickness of the semiconductor chip is preferably 50 to 200 μm. The adhesive layer containing a thermosetting component is not particularly limited as long as it has an adhesive layer containing a thermosetting component. For example, a mixture (adhesive composition) containing an epoxy resin, a curing agent, and a curing accelerator as constituent components Is preferable. The thickness of the adhesive f layer is preferably from 10 to 100 μm.

[Substrate or frame]
The substrate or the frame is not particularly limited, but is, for example, a three-layer coreless substrate. Further, a wiring may be provided in the substrate. The thickness of the frame is preferably 50 to 150 μm.

(Step of preparing a laminate)
A semiconductor chip having an adhesive layer containing a thermosetting component laminated on one surface is mounted on a support substrate (substrate or frame). Then, the semiconductor chip with the adhesive layer and the supporting substrate (substrate with wiring) are heated and pressed at 60 to 150 ° C. (mounting temperature) via the adhesive layer of the semiconductor chip to obtain a laminate. When the heating temperature is 60 ° C. or higher, good adhesion to the adhesive can be ensured. When the heating temperature is 150 ° C. or lower, excessive bleed-out of the adhesive layer during pressure bonding can be suppressed. From such a viewpoint, the heating temperature in this step is more preferably from 70 to 140 ° C, further preferably from 80 to 130 ° C.

(Step of curing the adhesive layer in the laminate)
The adhesive layer in the laminate is brought into a semi-cured state or a cured state by heating. The temperature at that time is preferably 100 to 200 ° C. 110-130 degreeC is preferable from a curable viewpoint. Further, from the viewpoint of removing bubbles between the substrate and the adhesive layer, the substrate may be placed under a pressurized environment during heating. When the adhesive layer is in a semi-cured state, it can be further cured in the next step of resin sealing and the heat treatment step of the resin-sealed laminate to be in a cured state.
The adhesive obtained in the above step may be heated to cure the adhesive layer in the semiconductor chip. For raising and keeping the temperature, for example, an oven such as a commercially available clean oven can be used. The temperature and time for heating and keeping the temperature are not particularly limited as long as the adhesive layer can be cured. For example, the temperature is preferably raised to a temperature of 80 to 200 ° C over 10 minutes to 1 hour, and 100 to 150 hours. More preferably, the temperature is raised to a temperature of ° C over 20 to 50 minutes. In addition, the heat retention is preferably performed at 100 to 200 ° C for 10 minutes to 120 minutes, and more preferably at 100 to 150 ° C for 50 to 90 minutes.

After the step of curing the adhesive component in the laminate by heat treatment, the laminate is placed in a mold and resin-sealed under reduced pressure using an epoxy resin composition. Hereinafter, the epoxy resin composition used at this time will be described.
[Epoxy resin composition]
The epoxy resin composition here is an epoxy resin composition used as a sealing resin. As the epoxy resin composition of the present embodiment, a powder, a granule, a film, or a liquid is prepared. The resin composition of the present embodiment can be prepared by any method as long as various components can be uniformly dispersed and mixed. As a general method, there can be mentioned a method in which components of a predetermined compounding amount are sufficiently mixed by a mixer or the like, then melt-kneaded by a mixing roll, an extruder or the like, and then cooled and pulverized. For example, it can be obtained by uniformly stirring and mixing predetermined amounts of the above-mentioned components, kneading with a kneader, roll, extruder, or the like, which has been previously heated to 70 to 140 ° C., cooling, and pulverizing. It is easy to use if it is tableted with dimensions and mass that match the molding conditions.

(Epoxy resin)
The epoxy resin of the present embodiment is preferably a compound having two or more epoxy groups. The epoxy resin used here is not particularly limited as those generally used in the epoxy resin composition, and examples thereof include a phenol novolak type epoxy resin, an orthocresol novolak type epoxy resin, and an epoxy resin having a triphenylmethane skeleton. Novolak resins obtained by condensing or co-condensing phenols such as phenol, cresol, bisphenol, biphenol, thiodiphenol, aminophenol and naphthol with compounds having an aldehyde group such as formaldehyde and acetaldehyde. Can be One of these may be used alone, or two or more may be used in combination.
Among them, it is preferable to contain a biphenyl-type epoxy resin which is a diglycidyl ether of an alkyl-substituted, aromatic-ring-substituted or unsubstituted biphenol from the viewpoint of compatibility between fluidity and curability. It is preferable to contain a novolak type epoxy resin from the viewpoint of curability, and it is preferable to contain a naphthalene type epoxy resin and or a triphenylmethane type epoxy resin from the viewpoint of heat resistance and low warpage. .

(Curing agent)
The epoxy resin composition of the present embodiment may contain a curing agent. The curing agent used herein is not particularly limited as long as it is generally used in epoxy resin compositions, and examples thereof include phenols such as phenol, cresol, bisphenol, biphenol, thiodiphenol, aminophenol, and naphthol with formaldehyde and acetaldehyde. Novolak-type phenolic resin obtained by condensation or co-condensation with a compound having an aldehyde group of formula (II), aralkyl-type resins such as phenol aralkyl resins synthesized from phenols and dimethoxyparaxylene or bis (methoxymethyl) biphenyl, and naphthol-aralkyl resins Phenol resin, copolymerized phenol aralkyl resin in which phenol novolak structure and phenol aralkyl structure are repeated randomly, block or alternately, cyclopentadiene-modified phenol resin And polycyclic aromatic ring-modified phenolic resins. One of these may be used alone, or two or more may be used in combination.

(Silane compound)
The epoxy resin composition of the present embodiment may contain a silane compound. The silane compounds are various silane compounds such as epoxy silane, mercapto silane, amino silane, alkyl silane, ureido silane and vinyl silane. One of these may be used alone, or two or more may be used in combination. In addition to the silane compounds, one of them such as titanates and aluminum chelates may be used alone, or two or more thereof may be used in combination.

(Curing accelerator)
The epoxy resin composition of the present embodiment may contain a curing accelerator. The curing accelerator used in the present embodiment is generally used in the epoxy resin composition for encapsulation and is not particularly limited, and 1,5-diazabicyclo [4.3.0] nonene-5,5,6. Cycloamidine compounds such as -dibutylamino-1,8-diazabicyclo [5.4.0] undecene-7, tertiary amines such as tris (dimethylaminomethyl) phenol and derivatives thereof, and 2-phenyl-4 And imidazoles such as -methylimidazole and derivatives thereof, organic phosphines such as phenylphosphine, and tetraphenylboron salts such as N-methylmorpholine / tetraphenylborate and derivatives thereof. One of these may be used alone, or two or more may be used in combination.

(Filler, inorganic filler)
The epoxy resin composition of the present embodiment may contain a filler. The filler used in the present embodiment is generally used in the sealing epoxy resin composition, and is not particularly limited, and is preferably an inorganic filler. For example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, amorphous silica And inorganic fillers containing at least one inorganic material selected from the group consisting of antimony oxides. Among these, alumina, aluminum nitride, boron nitride, crystalline silica, and amorphous silica are preferable for improving thermal conductivity. Aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, crystalline silica and non-crystalline Crystalline silica is preferred. In order to improve moisture resistance, alumina, silica, aluminum hydroxide and antimony oxide are preferred. One of these may be used alone, or two or more may be used in combination.

(Sealing process with epoxy resin composition)
Next, using a molding device, the above-described laminate is sealed with the epoxy resin composition melted by decompression and heating to obtain a resin-sealed laminate (sealing substrate). The temperature at the time of sealing is 110 to 200 ° C. The temperature is preferably from 150 to 180 ° C from the viewpoint of curability and shortening of molding time. The thickness of the resin sealing is preferably 200 to 400 μm.

The pressure reduction rate during compression molding is preferably from 10 to 350 torr / sec, more preferably from 50 to 330 torr / sec, and even more preferably from 150 to 310 torr / sec.
The decompression rate is a decompression rate represented by the following formula (1). The unit of the initial pressure and the decompression limit pressure is “torr”, the unit of time to reach the decompression limit pressure is “second”, and the decompression limit pressure is 5 torr. Per second. When the pressure is reduced, the pressure rapidly decreases, but when the pressure is reduced to some extent, the pressure decreases less. When the pressure decreases below 5 torr per second, it is considered that the pressure has reached the decompression limit pressure.
(Decompression rate) = (Initial pressure−Decompression limit pressure) / (Decompression limit pressure arrival time) Equation (1)

(Step of curing the resin-sealed laminate by heat treatment)
The resin sealing laminate (sealing substrate) obtained by the above process is heated to cure the epoxy resin composition in the sealing substrate. For raising and keeping the temperature, for example, an oven such as a commercially available clean oven can be used. For example, the heat retention (curing temperature) is preferably from 110 to 200 ° C for 30 minutes to 7 hours, and more preferably from 150 to 180 ° C for 1 hour to 6 hours. The thickness of the resin-sealed laminate (sealing substrate) is preferably 300 to 500 μm.

(Step of separating the cured resin-sealed laminate (sealing substrate) into individual pieces)
As a dicer or a rotary blade (blade) used for cutting the cured resin sealing laminate (sealing substrate), a commercially available dicer or blade can be used. As the dicer, for example, a full automatic dicing saw 6000 series or a semi-automatic dicing saw 3000 series manufactured by Disco Corporation can be used. As the blade, a dicing blade NBC-ZH05 series or NBC-ZH series manufactured by Disco Corporation can be used.

  In the step of cutting the cured resin-encapsulated laminate, for example, not only rotating blades such as Disco's full automatic dicing saw 6000 series, but also Disco's full automatic laser saw 7000 series etc. Cutting may be performed using a laser.

  The embodiment of the method of manufacturing a semiconductor device according to the present invention has been described above. However, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention.

  Hereinafter, the present invention will be described specifically with reference to Examples, but the present invention is not limited thereto.

<Preparation of epoxy resin composition>
Materials for preparing an epoxy resin composition for sealing a semiconductor device were prepared as follows.

(A) Epoxy resin · E1: biphenylaralkyl type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., product name: NC-3000, epoxy equivalent: 280 g / eq),
E2: Biphenyl type epoxy resin (manufactured by Mitsubishi Chemical Corporation, product name: YX-4000, epoxy equivalent: 196 g / eq, melting point: 106 ° C)

(B) Curing agent · H1: biphenyl aralkyl type phenol resin (manufactured by Meiwa Kasei Co., Ltd., product name: MEHC-7800, hydroxyl equivalent: 106 g / eq, softening point: 66 ° C)
H2: Trisphenylmethane type phenol resin (manufactured by Air Water Co., Ltd., product name: HE910-10, hydroxyl equivalent: 100 g / eq, softening point: 83 ° C.)

(C) Curing accelerator • A1: adduct of triphenylphosphine with 1,4-benzoquinone

(D) Inorganic filler ・ F1: Silica filler having an average particle diameter of 19.4 μm (manufactured by Denka Corporation, product name: FB-9454)

(E) Silane coupling agent · C1: N-phenyl-3-aminopropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., product name: KBM-573)
C2: 3-glycidoxypropyltriethoxysilane (Shin-Etsu Chemical Co., Ltd., product name: KBM-403)
-C3: 3-mercaptopropyltrimethoxysilane (Shin-Etsu Chemical Co., Ltd., product name: KBM-803)

(F) Pigment P1: Carbon black (Mitsubishi Chemical Corporation, product name: MA600MJ)

  5 parts by mass of E1 of the above epoxy resin, 95 parts by mass of E2, 50 parts by mass of H1 of the curing agent, 30 parts by mass of H2, 2 parts by mass of A1 of the curing accelerator, and 14 parts by mass of C1 of the silane coupling agent. Parts, 10 parts by weight of C2, 0.5 parts by weight of C3, 4 parts by weight of P1 of the pigment, and 78% by volume of F1 of the inorganic filler with respect to the total volume. Thereafter, the mixture was sufficiently mixed by a mixer, kneaded in a kneader heated to 110 ° C. in advance, cooled, and pulverized to prepare an epoxy resin composition.

<Production of semiconductor package for evaluation>
A chip, a die attach film area of 10 × 6 mm ² , a chip thickness of 200 μm and a die attach film thickness of 10 μm are mounted on a three-layer coreless substrate having a substrate area of 240 × 74 mm ² and a substrate thickness of 90 μm. The product was mounted using a product name: DB830plus +) manufactured by Co., Ltd. to produce a chip mounting substrate.
The epoxy resin composition was compression-molded on the chip mounting substrate produced as described above using a compression device (manufactured by TOWA, product name: PMC1040-S) to obtain a sealing substrate. The molding conditions were such that the sealing thickness was 350 μm, the molding temperature was 175 ° C., and the molding time was 120 seconds, and the pressure reduction rate was 10 to 350 torr / sec.
The decompression rate is defined as in equation (1).
(Decompression rate) = (Initial pressure-Decompression limit pressure) / (Decompression limit pressure arrival time) Formula (1) The unit of the initial pressure and the decompression limit pressure is “torr”, and the unit of the decompression limit pressure arrival time is “ Second ", and the decompression limit pressure was changed within 5 torr / sec.
Thereafter, the sealing substrate was cut into 15 × 15 mm ² sizes using a full auto dicer (manufactured by Disco Co., Ltd., DAD3350), and individualized to obtain a semiconductor package (semiconductor device) for evaluation. In addition, 60 semiconductor packages for evaluation can be obtained from one sealing substrate.

<Filler dispersibility evaluation method (SAT)>
Observing the semiconductor package (semiconductor device) manufactured as described above using an ultrasonic image diagnostic system (product name: IS-350, manufactured by Insight Co., Ltd.), the bias of the filler (inorganic filler) is generated. The dispersibility was evaluated as poor (B) and good (A) when the filler was uniformly dispersed without deviation of the filler and good (AA) when the filler was uniformly dispersed (FIG. 5). reference).

<Evaluation of warpage variation>
Eight semiconductor packages (semiconductor devices) for evaluation after singulation are selected from one substrate, and each package is measured at 30 ° C., 50 ° C., and 75 ° C. using a warpage measurement device Thermoire (AKROMETRIX, product name: ThermoMoire AXP). The amount of warpage at 10 points of 100 ° C., 100 ° C., 125 ° C., 150 ° C., 190 ° C., 220 ° C., 240 ° C., and 250 ° C. was measured. Thereafter, the range from the minimum to the maximum of the obtained warpage amount of the eight packages was defined as the warpage amount variation (calculated from the equation (2)). When the average warpage variation (calculated from equation (3)) at each temperature was 50 μm or less, it was evaluated as good (A), and when the average became 50 μm or more, as poor (B), the warpage variation was evaluated.
Warpage amount variation = Warpage amount maximum-Warpage amount minimum ... Equation (2) Average warpage amount variation at each temperature = (Sum of warpage amount variations at each temperature) / (Number of measured temperatures) ... Equation (3)

(Examples 1 and 2 and Comparative Example 1)
In the following, the case where the pressure reduction rate is 90 torr / second is Example 1, the case where the pressure reduction rate is 300 torr / second is Example 2, and the case where there is no pressure reduction (the pressure reduction rate is 0 torr / second) is Comparative Example 1. Table 1 summarizes the measurement results of the amount variation.

  In Examples 1 and 2 in which the pressure reduction rate was in the range of 10 to 350 torr / sec, the filler dispersibility was good, the filler segregation was suppressed, and the variation in the amount of warpage was small. In Example 2, the filler was more uniformly dispersed than in Example 1. On the other hand, in Comparative Example 1, filler segregation of large and small particle sizes occurred, the filler dispersibility was poor, and the variation in the amount of warpage was large.

DESCRIPTION OF SYMBOLS 1 ... Semiconductor device, 2 ... Substrate, 3 ... Semiconductor chip with adhesive layer laminated on one surface, 4 ... Seal resin, 5 ... Semiconductor chip, 6 ... Adhesive layer , 7 ... Rotary blade

Claims (7)

A step of preparing a laminate by mounting a plurality of semiconductor chips having a bonding layer containing a thermosetting component on one surface on a substrate or a frame,
Curing the adhesive component in the laminate by heat treatment,
After placing the laminate in a mold, the epoxy resin composition as a sealing resin, while reducing the inside of the mold under reduced pressure, compression molding and resin sealing,
Curing the resin sealing laminate by heat treatment,
Separating the resin-encapsulated laminate cured by the heat treatment into individual pieces, wherein the step of performing the compression molding and encapsulating the resin comprises the following equation (1). A method of manufacturing a semiconductor device, comprising: performing compression molding in a mold under reduced pressure at a reduced pressure rate of 10 to 350 torr / sec.
(Decompression rate) = (Initial pressure−Decompression limit pressure) / (Decompression limit pressure arrival time) Equation (1)   2. The method according to claim 1, wherein in the step of preparing the stacked body, a temperature at which the semiconductor chip is mounted on the substrate or the frame is 60 to 150 ° C. 3.   3. The method according to claim 1, wherein a heating temperature at which the adhesive component is cured by heat treatment is 100 to 200 ° C. 4.   The method for manufacturing a semiconductor device according to claim 1, wherein a heating time for curing the adhesive component by heat treatment is 10 to 120 minutes.   The method of manufacturing a semiconductor device according to claim 1, wherein a molding temperature at which the epoxy resin composition is sealed with a resin is 110 to 200 ° C. 5.   The method for manufacturing a semiconductor device according to claim 1, wherein a heating temperature at which the resin-sealed laminated body is cured by heat treatment is 110 to 200 ° C. 7.   The method of manufacturing a semiconductor device according to any one of claims 1 to 6, wherein the step of singulation cuts the resin-sealed laminate into a plurality of pieces, and the cutting type is a rotary blade.

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