JP2020005216A - Solid state image pickup device - Google Patents

Solid state image pickup device Download PDF

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Publication number
JP2020005216A
JP2020005216A JP2018125684A JP2018125684A JP2020005216A JP 2020005216 A JP2020005216 A JP 2020005216A JP 2018125684 A JP2018125684 A JP 2018125684A JP 2018125684 A JP2018125684 A JP 2018125684A JP 2020005216 A JP2020005216 A JP 2020005216A
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Prior art keywords
solid
state imaging
imaging device
connection terminal
conductor pattern
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JP2018125684A
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JP7149489B2 (en
Inventor
正三 越智
Shozo Ochi
正三 越智
大輔 櫻井
Daisuke Sakurai
大輔 櫻井
清一 糸井
Seiichi Itoi
清一 糸井
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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Priority to JP2018125684A priority Critical patent/JP7149489B2/en
Priority to PCT/JP2018/036629 priority patent/WO2019077980A1/en
Priority to CN201880060819.3A priority patent/CN111108744B/en
Priority to EP18867857.7A priority patent/EP3700196B1/en
Publication of JP2020005216A publication Critical patent/JP2020005216A/en
Priority to US16/803,551 priority patent/US11381767B2/en
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Abstract

To provide a solid state image pickup device that reduces the size of a sealing fixing part formed of a sealing resin as much as possible to reduce the size of the entire configuration.SOLUTION: A solid state image pickup device is used which comprises: a main substrate having a solid state image pickup element that includes a connection terminal for transmitting and receiving electrical signals on the back of a light receiving surface, the connection terminal for establishing electrical connection with the solid state image pickup element, and a cavity part in which an electronic component is arranged; first conductor patterns that are formed at the ends of the connection terminal; and a sealing resin that is formed on the connection terminals. A solid state image pickup device is used which comprises: a main substrate having a solid state image pickup element that includes a connection terminal for transmitting and receiving electrical signals on the back of a light receiving surface, the connection terminal for establishing electrical connection with the solid state image pickup element, and a cavity part in which an electronic component is arranged via an electrical connection part; a second conductor pattern that is formed at an end of the cavity part; and a sealing resin that covers the electronic component.SELECTED DRAWING: Figure 1

Description

本発明は、電子内視鏡等に設けられる小型の固体撮像装置に関するものである。   The present invention relates to a small solid-state imaging device provided in an electronic endoscope or the like.

従来から、細長の挿入部を体腔内に挿入することにより、体腔内臓器等を観察し、必要に応じて処置具チャンネル内に挿通した処置具を用いて各種治療処置の行える医療用の内視鏡が広く利用されている。また、工業分野においても、ボイラ,タービン,エンジン,化学プラントなどの内部の傷や腐蝕などを観察し、検査することのできる工業用内視鏡が広く利用されている。   2. Description of the Related Art Conventionally, by inserting an elongated insertion portion into a body cavity, an internal organ in the body cavity is observed, and if necessary, a medical endoscope for performing various treatments using a treatment tool inserted into the treatment tool channel. Mirrors are widely used. Also, in the industrial field, industrial endoscopes capable of observing and inspecting internal scratches and corrosion of boilers, turbines, engines, chemical plants, and the like are widely used.

前記内視鏡としては、例えば挿入部の先端部に電荷結合素子(CCDと略記)などの固体撮像素子や電子部品を設けた固体撮像装置が内蔵されている。この固体撮像装置で光電変換した信号を信号ケーブル伝送し、信号処理手段を介してモニタ装置にカラー表示するようにした電子内視鏡が用いられている。   As the endoscope, for example, a solid-state imaging device such as a solid-state imaging device such as a charge-coupled device (abbreviated as CCD) or an electronic component provided at a distal end portion of an insertion portion is incorporated. An electronic endoscope is used in which a signal that has been photoelectrically converted by the solid-state imaging device is transmitted through a signal cable and displayed in color on a monitor device via a signal processing unit.

内視鏡においては、狭く曲がりくねった管腔内に挿入されるため挿入部の細径化が望まれている。そして、電子内視鏡では、小回りがきき、操作性の良い内視鏡を実現するため固体撮像装置の小型、小径化が望まれていた。   In an endoscope, since it is inserted into a narrow and meandering lumen, it is desired to reduce the diameter of the insertion portion. In the electronic endoscope, there has been a demand for a small-sized and small-diameter solid-state imaging device in order to realize an endoscope with a small turn and good operability.

例えば、電子内視鏡の先端部に配置される固体撮像装置として、特許文献1には高密度化又は小型化を達成するため、外形サイズを大きくせずに可撓性基板の実装面積を拡大できるようにした固体撮像装置が示されている。   For example, as a solid-state imaging device disposed at the tip of an electronic endoscope, Patent Document 1 discloses that the mounting area of a flexible substrate is increased without increasing the external size in order to achieve high density or miniaturization. Shown is a solid-state imaging device that enables it.

特開平11−193572号公報JP-A-11-193572

図8は、特許文献1の固体撮像装置の断面図であり、図9は、特許文献1の固体撮像装置の側面図である。   FIG. 8 is a cross-sectional view of the solid-state imaging device of Patent Document 1, and FIG. 9 is a side view of the solid-state imaging device of Patent Document 1.

しかしながら、特許文献1の固体撮像装置では、固体撮像素子22の受光面22aと、上記受光面22a上で接着された透明部材であるカバープレート21と、固体撮像素子22の端部の接続端子22bと、前記接続端子22bに配置されたパッド部と、前記パッド部上に形成された突起電極と、前記突起電極を介して接続された可撓性基板32のインナーリードと、前記インナーリード上に配置された電子部品33、34と、前記接続端子22bの周辺部及び前記固体撮像素子22と、前記インナーリードとの接続部分に封止された封止樹脂26と、から構成されている。   However, in the solid-state imaging device of Patent Document 1, the light-receiving surface 22a of the solid-state imaging device 22, the cover plate 21 which is a transparent member adhered on the light-receiving surface 22a, and the connection terminal 22b at the end of the solid-state imaging device 22 And a pad portion disposed on the connection terminal 22b, a protruding electrode formed on the pad portion, an inner lead of the flexible substrate 32 connected via the protruding electrode, and Electronic components 33 and 34 are arranged, a peripheral portion of the connection terminal 22b and the solid-state imaging device 22, and a sealing resin 26 sealed at a connection portion with the inner lead.

このため、固体撮像素子22においては、接続端子22bよって、受光面22aの占める割合が低下し、その結果、固体撮像の性能効率が低下する。   For this reason, in the solid-state imaging device 22, the proportion of the light receiving surface 22a occupied by the connection terminal 22b decreases, and as a result, the performance efficiency of the solid-state imaging decreases.

更に封止樹脂26によって形成された封止固定部の範囲が広範になり、固体撮像装置の小型化が阻まれていた。   Further, the range of the sealing and fixing portion formed by the sealing resin 26 has been widened, which has hindered miniaturization of the solid-state imaging device.

本発明は、上記従来の課題を解決するもので、固体撮像の性能効率を損なう事無く、面積を最小限に抑えることを可能とし、小型化が可能なモジュール構造を提供することを目的とする。   An object of the present invention is to solve the above-mentioned conventional problems, and to provide a module structure that can minimize the area without impairing the performance efficiency of solid-state imaging and that can be miniaturized. .

(独立請求項のみ)
上記目的を達成するために、電気信号の授受を行うための接続端子を受光面に対して裏面に備えた固体撮像素子と、上記固体撮像素子との電気的接続をするための接続端子と、電子部品が配置されるキャビティ部と、を持つメイン基板と、上記接続端子の端部に形成された第1導体パターンと、上記接続端子に形成された封止樹脂と、を含む固体撮像装置を用いる。
(Independent claims only)
To achieve the above object, a solid-state imaging device including a connection terminal for transmitting and receiving an electric signal on a back surface with respect to a light receiving surface, and a connection terminal for making an electrical connection with the solid-state imaging device, A solid-state imaging device including: a main substrate having a cavity in which an electronic component is arranged; a first conductor pattern formed at an end of the connection terminal; and a sealing resin formed at the connection terminal. Used.

また、電気信号の授受を行うための接続端子を受光面に対して裏面に備えた固体撮像素子と、上記固体撮像素子との電気的接続をするための接続端子と、電子部品が電気的接続部を介して配置されるキャビティ部と、を持つメイン基板と、上記キャビティ部の端部に形成された第2導体パターンと、上記電子部品を覆う封止樹脂と、を含む固体撮像装置を用いる。   Also, a solid-state imaging device having a connection terminal for transmitting and receiving an electric signal on the back surface with respect to the light receiving surface, a connection terminal for making an electrical connection with the solid-state imaging device, and an electronic component being electrically connected Using a solid-state imaging device including a main substrate having a cavity portion disposed through the portion, a second conductor pattern formed at an end portion of the cavity portion, and a sealing resin covering the electronic component. .

以上のように、本発明の固体撮像装置によれば、接続端子を受光面の裏面に形成することで受光面占有率が上がり、その結果、固体撮像の性能効率が損なわれない。   As described above, according to the solid-state imaging device of the present invention, by forming the connection terminals on the back surface of the light-receiving surface, the occupancy of the light-receiving surface is increased, and as a result, the performance efficiency of the solid-state imaging is not impaired.

更に、導体パターンによって封止樹脂がメイン基板の側面に流れ落ちることなく、メイン基板の端部までフィレットが形成され、信頼性が高く、小型で高性能な固体撮像装置を提供することができる。   Furthermore, a fillet is formed up to the end of the main substrate without the sealing resin flowing down to the side surface of the main substrate by the conductor pattern, so that a highly reliable, small, and high-performance solid-state imaging device can be provided.

(a)〜(b)本発明の実施の形態1における固体撮像装置の構成を示す断面図(A)-(b) Sectional views showing the configuration of the solid-state imaging device according to Embodiment 1 of the present invention. (a)〜(b)本発明の実施の形態1における固体撮像装置の構成を示す平面図(A)-(b) Plan views showing the configuration of the solid-state imaging device according to Embodiment 1 of the present invention. 本発明の実施の形態1における封止樹脂の濡れ広がりを示す断面図Sectional view showing wet spreading of sealing resin according to Embodiment 1 of the present invention. (a)〜(f)本発明の実施の形態1における固体撮像装置の形成工程を示す断面図(A)-(f) Sectional drawing which shows the formation process of the solid-state imaging device in Embodiment 1 of this invention. 本発明の実施の形態2における固体撮像装置の構成を示す断面図Sectional drawing which shows the structure of the solid-state imaging device in Embodiment 2 of this invention. (a)〜(b)本発明の実施の形態2における固体撮像装置の構成を示す平面図(A)-(b) Plan views showing the configuration of the solid-state imaging device according to Embodiment 2 of the present invention. (a)〜(b)本発明の実施の形態3における固体撮像装置の構成を示す平面図(A)-(b) Plan views showing the configuration of the solid-state imaging device according to Embodiment 3 of the present invention. 従来の固体撮像装置の構成を示す断面図Sectional view showing the configuration of a conventional solid-state imaging device 従来の固体撮像装置の構成を示す平面図Plan view showing the configuration of a conventional solid-state imaging device

以下本発明の実施の形態について、図面を参照しながら説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(実施の形態1)
図1(a)、図1(b)は、本発明の実施の形態1における固体撮像装置の断面図である
図2(a)、図2(b)は、本発明の実施の形態1において図1の波線Aでの固体撮像装置の平面図で、図2(a)が封止前、図2(b)が封止後である。
(Embodiment 1)
FIGS. 1A and 1B are cross-sectional views of a solid-state imaging device according to Embodiment 1 of the present invention. FIGS. 2A and 2B are diagrams illustrating Embodiment 1 of the present invention. FIG. 2A is a plan view of the solid-state imaging device taken along a dashed line A in FIG. 1, in which FIG.

図3は本発明の実施の形態1において図1(a)の領域Bでの封止樹脂の濡れ広がりを示す断面図である。   FIG. 3 is a cross-sectional view showing the spreading of the sealing resin in region B of FIG. 1A in the first embodiment of the present invention.

<構造>
本発明の実施の形態1における固体撮像装置の構造は、図1(a)、図1(b)に示すように、固体撮像素子3があり、固体撮像素子3の一方の面には受光面3aが、もう一方の面には、第1接続端子9が複数個配置されている。
<Structure>
As shown in FIGS. 1A and 1B, the structure of the solid-state imaging device according to the first embodiment of the present invention includes a solid-state imaging device 3, and one surface of the solid-state imaging device 3 has a light receiving surface. 3a, a plurality of first connection terminals 9 are arranged on the other surface.

受光面3aに対向するようにカバーガラス1が、配置されており、接着剤2で固体撮像素子3とカバーガラス1を固定している。   The cover glass 1 is arranged so as to face the light receiving surface 3 a, and the solid-state imaging device 3 and the cover glass 1 are fixed with an adhesive 2.

固体撮像素子3の面3bに対向するように、メイン基板8を配置しており、固体撮像素子3の第1接続端子9とメイン基板8の第2接続端子11とを突起電極10を介して、電気的に接続しており、封止樹脂4で固体撮像素子3とメイン基板8の接続部を固定している。   The main substrate 8 is disposed so as to face the surface 3 b of the solid-state imaging device 3, and the first connection terminal 9 of the solid-state imaging device 3 and the second connection terminal 11 of the main substrate 8 are connected via the protruding electrode 10. The connection portion between the solid-state imaging device 3 and the main substrate 8 is fixed by the sealing resin 4.

そして、図1(a)に示すように、封止樹脂4は接合部の端部に形成された第1導体パターン5aの外側に流れ落ちることなく濡れ広がっている。   Then, as shown in FIG. 1A, the sealing resin 4 spreads without flowing to the outside of the first conductive pattern 5a formed at the end of the joint.

ここで第1導体パターン5aは、メイン基板8と固体撮像素子3を接続する際に使用する実装機において、位置合わせの認識マークとしても使用される。第1導体パターン5aは、第2接続端子11とは異なる形状である。   Here, the first conductor pattern 5a is also used as an alignment recognition mark in a mounting machine used when connecting the main substrate 8 and the solid-state imaging device 3. The first conductor pattern 5a has a shape different from that of the second connection terminal 11.

さらに、図1(b)に示すように、メイン基板8と固体撮像素子3の接合部の両側に形成したキャビティ部7に電子部品6が複数個配置されており、メイン基板8の第3接続端子13と接合材12を介して電気的に接続している。   Further, as shown in FIG. 1B, a plurality of electronic components 6 are arranged in cavities 7 formed on both sides of the junction between the main substrate 8 and the solid-state imaging device 3, and the third connection of the main substrate 8 is performed. It is electrically connected to the terminal 13 via the bonding material 12.

また、メイン基板8には複数のケーブル接続端子14が形成されている。
<製法>
このような固体撮像装置は図4(a)〜図4(f)の工程により作製することができる。
Further, a plurality of cable connection terminals 14 are formed on the main board 8.
<Production method>
Such a solid-state imaging device can be manufactured by the steps shown in FIGS.

はじめに、図4(a)に示すように、固体撮像素子3に第1接続端子9を形成し、固体撮像素子の受光面にカバーガラス1を配置し、接着剤2で固定する。   First, as shown in FIG. 4A, the first connection terminal 9 is formed on the solid-state imaging device 3, the cover glass 1 is arranged on the light receiving surface of the solid-state imaging device, and fixed with the adhesive 2.

一方で図4(b)に示すように、キャビティ部7が形成されたメイン基板8に第1導体パターン5a、第2接続端子11、第3接続端子13、ケーブル接続端子14を形成する。   On the other hand, as shown in FIG. 4B, the first conductor pattern 5a, the second connection terminal 11, the third connection terminal 13, and the cable connection terminal 14 are formed on the main board 8 in which the cavity 7 is formed.

第1導体パターン5aは、第2接続端子11、第3接続端子13、ケーブル接続端子14とともに同じプロセスで形成される。   The first conductor pattern 5a is formed in the same process as the second connection terminal 11, the third connection terminal 13, and the cable connection terminal 14.

次に図4(c)に示すように、第2接続端子11上に突起電極10を形成し、キャビティ部7の第3接続端子13上に電子部品6、接合材12を配置する。   Next, as shown in FIG. 4C, the protruding electrodes 10 are formed on the second connection terminals 11, and the electronic component 6 and the bonding material 12 are arranged on the third connection terminals 13 of the cavity 7.

次に図4(d)に示すように、加熱によって接合材12を溶融して、電子部品6と第3接続端子13を、接合材12を介して電気的に接続する。   Next, as shown in FIG. 4D, the bonding material 12 is melted by heating, and the electronic component 6 and the third connection terminal 13 are electrically connected via the bonding material 12.

次に図4(e)に示すように、メイン基板8の突起電極10が形成された面と固体撮像素子3の第1接続端子9が形成された面を向かいあわせで配置し、第1接続端子9と第2接続端子11とを突起電極10を介して電気的に接続する。   Next, as shown in FIG. 4E, the surface of the main substrate 8 on which the protruding electrodes 10 are formed and the surface of the solid-state imaging device 3 on which the first connection terminals 9 are formed are arranged facing each other, and the first connection is established. The terminal 9 and the second connection terminal 11 are electrically connected via the protruding electrode 10.

最後に次に図4(f)に示すように、第1接続端子9と第2接続端子11の接合部に封止樹脂4を封止して接続部を固定し、固体撮像装置が完成する。
<動作>
図1(a)において、カバーガラス1を介して固体撮像素子3が受光面3aで受光し、電気信号に変換される。
Finally, as shown in FIG. 4F, the joint between the first connection terminal 9 and the second connection terminal 11 is sealed with the sealing resin 4 to fix the connection, thereby completing the solid-state imaging device. .
<Operation>
In FIG. 1A, the solid-state imaging device 3 receives light on a light receiving surface 3a via a cover glass 1, and is converted into an electric signal.

変換された電気信号は、固体撮像素子3と電気的に接続されているメイン基板8に伝送される。   The converted electric signal is transmitted to the main board 8 electrically connected to the solid-state imaging device 3.

メイン基板8に伝送された電気信号は、メイン基板8と電気的に接続されている電子部品6に伝送される。   The electric signal transmitted to the main board 8 is transmitted to the electronic component 6 electrically connected to the main board 8.

電子部品6は、伝送された電気信号に対して電子部品6に組み込まれた処理を行い、再びメイン基板8に伝送する。   The electronic component 6 performs processing incorporated in the electronic component 6 on the transmitted electric signal, and transmits the signal to the main board 8 again.

全ての電子部品6を経由した後、電気信号をケーブル接続端子14から外部機器に伝送する。
<各要素>
なお、それぞれの部材のサイズは、メイン基板8が1mm×1mm×厚さ0.6mm、電子部品6が0.6mm×0.3mm×厚さ0.3mm以下、カバーガラス1が1mm×1mm×厚さ0.3mm、固体撮像素子3が1mm×1mm×厚さ0.1mmである。
After passing through all the electronic components 6, the electric signal is transmitted from the cable connection terminal 14 to the external device.
<Each element>
The size of each member is as follows: main board 8 is 1 mm × 1 mm × thickness 0.6 mm, electronic component 6 is 0.6 mm × 0.3 mm × thickness 0.3 mm or less, and cover glass 1 is 1 mm × 1 mm × thickness. The thickness is 0.3 mm, and the solid-state imaging device 3 is 1 mm × 1 mm × 0.1 mm in thickness.

<電子部品6>
電子部品6は、例えば、コンデンサであるが、抵抗器でも良い。
<カバーガラス1>
カバーガラス1は、透明な直方体形状の光学部材である。
<Electronic components 6>
The electronic component 6 is, for example, a capacitor, but may be a resistor.
<Cover glass 1>
The cover glass 1 is a transparent rectangular parallelepiped optical member.

また、固体撮像装置の幅寸法を固体撮像素子3と同じにし、小型化するため、カバーガラス1の幅寸法は固体撮像素子3以下である。   Further, in order to make the width of the solid-state imaging device the same as that of the solid-state imaging device 3 and to reduce the size, the width of the cover glass 1 is not more than the solid-state imaging device 3.

<固体撮像素子3>
固体撮像素子3は、光を検出して電気信号に変換するCCDイメージセンサやCMOSイメージなどのことである。信号処理を行う回路が組み込まれていても良い。信号処理を行う機能を持つ素子と積層されていても良い。電気信号の授受を行うための第1接続端子9を備えている。
<Solid-state imaging device 3>
The solid-state imaging device 3 is a CCD image sensor or a CMOS image that detects light and converts it into an electric signal. A circuit for performing signal processing may be incorporated. It may be stacked with an element having a function of performing signal processing. A first connection terminal 9 for transmitting and receiving electric signals is provided.

<第1接続端子9,第2接続端子11,13,14>
第1接続端子9、11、13、14は、例えばアルミニウムなどによって形成されているが、銅のようにアルミニウムよりも導電率が高い金属やタングステンを用いても良い。さらに、銅にニッケル/金めっき処理を施して酸化しにくい状態にしても良い。
<First connection terminal 9, second connection terminals 11, 13, 14>
The first connection terminals 9, 11, 13, and 14 are formed of, for example, aluminum or the like, but may be formed of metal such as copper or tungsten having higher conductivity than aluminum. Further, the copper may be subjected to a nickel / gold plating treatment so that the copper is hardly oxidized.

<ケーブル接続端子14>
ケーブル接続端子14は、例えばアルミニウムなどによって形成されているが、銅のようにアルミニウムよりも導電率が高い金属やタングステンを用いても良い。さらに、銅にニッケル/金めっき処理を施して酸化しにくい状態にしても良い。
<Cable connection terminal 14>
The cable connection terminal 14 is made of, for example, aluminum or the like, but may be made of a metal such as copper, which has higher conductivity than aluminum, or tungsten. Further, the copper may be subjected to a nickel / gold plating treatment so that the copper is hardly oxidized.

<突起電極10>
突起電極10は、例えば半田などによって形成されているが、銅や金のような金属を用いても良い。
<Protrusion electrode 10>
The protruding electrode 10 is formed of, for example, solder or the like, but may be formed of a metal such as copper or gold.

<メイン基板8>
メイン基板8は、例えばセラミック基板などによって形成されているが、ビルドアップ基盤、アラミドエポキシ基板、ガラスエポキシ基板などを用いても良い。
<Main board 8>
The main substrate 8 is formed of, for example, a ceramic substrate, but may be a build-up substrate, an aramid epoxy substrate, a glass epoxy substrate, or the like.

<キャビティ部7>
キャビティ部7のサイズは、1.0mm×0.35mm×厚さ0.35mmであり、電子部品6がキャビティ部7内に収まることにより、固体撮像装置の幅寸法を固体撮像素子3の幅寸法と同じに保つことができる。
<Cavity part 7>
The size of the cavity portion 7 is 1.0 mm × 0.35 mm × thickness 0.35 mm. When the electronic component 6 is accommodated in the cavity portion 7, the width of the solid-state imaging device is reduced to the width of the solid-state imaging device 3. And can be kept the same.

キャビティ部7はメイン基板8の固体撮像素子3と接続されている面に2個、左右対称に形成されており、固体撮像素子3の放熱性が左右対称となることで、特性の面内バラつきを押さえることができる。   Two cavities 7 are formed symmetrically on the surface of the main substrate 8 connected to the solid-state imaging device 3, and the heat radiation of the solid-state imaging device 3 is symmetrical, so that the characteristics vary in-plane. Can be held down.

<接着剤2>
接着剤2は、紫外線硬化型等の透明な接着剤であり、幅寸法は固体撮像素子と同じかそれ以下である。
<封止樹脂4>
封止樹脂4は、エポキシ系の接着剤であり、幅寸法は固体撮像素子3よりと同じかそれ以下である。
<Adhesive 2>
The adhesive 2 is a transparent adhesive such as an ultraviolet curing type, and has a width dimension equal to or less than that of the solid-state imaging device.
<Sealing resin 4>
The sealing resin 4 is an epoxy-based adhesive, and has a width equal to or smaller than that of the solid-state imaging device 3.

また、図2(a)に示すように、メイン基板8の端部に第1導体パターン5aを形成することによって、図2(b)と図3に示すように、封止樹脂4は接合部の端部に形成された第1導体パターン5aの外側に流れ落ちることを防いでいる。さらに第1導体パターン5aにめっき処理を施すことにより、第1導体パターン5aの端部まで封止樹脂4が濡れ広がり、フィレットCを形成している。   Also, as shown in FIG. 2A, by forming the first conductor pattern 5a at the end of the main substrate 8, the sealing resin 4 is joined to the bonding portion as shown in FIGS. 2B and 3. Is prevented from flowing out of the first conductor pattern 5a formed at the end of the first conductor pattern 5a. Further, by applying plating to the first conductor pattern 5a, the sealing resin 4 spreads to the end of the first conductor pattern 5a to form a fillet C.

また、封止樹脂4はメイン基板8の外側に流れ落ちなければ、キャビティ部7の領域に形成されていても良い。   Further, the sealing resin 4 may be formed in the region of the cavity portion 7 as long as it does not flow outside the main substrate 8.

<第1導体パターン5a>
第1導体パターン5aは、例えばアルミニウムなどによって形成されているが、銅のようにアルミニウムよりも導電率が高い金属やタングステンを用いても良い。さらに、銅にニッケル/金めっき処理を施して酸化しにくい状態にしても良い。
<First conductor pattern 5a>
The first conductor pattern 5a is formed of, for example, aluminum or the like, but may be a metal such as copper or a tungsten having a higher conductivity than aluminum. Further, the copper may be subjected to a nickel / gold plating treatment so that the copper is hardly oxidized.

また、第1導体パターン5aは、メイン基板8と固体撮像素子3を接続する際に使用する実装機において、位置合わせの認識マークとしても使用される。第1導体パターン5aの形状は第2接続端子11と異なる形状で、かつ、封止樹脂4がメイン基板8の外側に流れ落ちないような形状であることが望ましく、サイズは、長手方向が0.3mm×0.1mm、短手方向が0.15mm×0.1mmのコーナーマークとなる。   The first conductor pattern 5a is also used as a recognition mark for alignment in a mounting machine used when connecting the main substrate 8 and the solid-state imaging device 3. It is desirable that the shape of the first conductive pattern 5a is different from the shape of the second connection terminal 11 and that the sealing resin 4 does not flow down to the outside of the main substrate 8, and the size is 0.1 mm in the longitudinal direction. The corner mark is 3 mm × 0.1 mm, and the short side direction is 0.15 mm × 0.1 mm.

(実施の形態2)
図5は、本発明の実施の形態2における固体撮像装置の断面図であり、図6(a)、図6(b)は本発明の実施の形態2において図5の波線Aでの固体撮像装置の平面図で、図6(a)が封止前、図6(b)が封止後である。説明しない事項は実施の形態1と同様である。
<構造>
本発明の実施の形態2における固体撮像装置の構造は、図5に示すように、固体撮像素子3があり、固体撮像素子3の一方の面には受光面3aが、もう一方の面には、第1接続端子9が複数個配置されている。
(Embodiment 2)
FIG. 5 is a cross-sectional view of the solid-state imaging device according to Embodiment 2 of the present invention. FIGS. 6A and 6B are diagrams illustrating solid-state imaging at wavy line A in FIG. 5 according to Embodiment 2 of the present invention. 6A is a plan view of the device, FIG. 6A is before sealing, and FIG. 6B is after sealing. Items not described are the same as in the first embodiment.
<Structure>
As shown in FIG. 5, the structure of the solid-state imaging device according to the second embodiment of the present invention includes a solid-state imaging device 3 having a light-receiving surface 3a on one surface and a light-receiving surface 3a on the other surface. And a plurality of first connection terminals 9.

受光面3aに対向するようにカバーガラス1が、配置されており、接着剤2で固体撮像素子3とカバーガラス1を固定している。   The cover glass 1 is arranged so as to face the light receiving surface 3 a, and the solid-state imaging device 3 and the cover glass 1 are fixed with an adhesive 2.

固体撮像素子3の面3bに対向するように、メイン基板8を配置しており、固体撮像素子3の第1接続端子9とメイン基板8の第2接続端子11とを突起電極10を介して、電気的に接続しており、封止樹脂4で固体撮像素子3とメイン基板8の接続部を固定している。   The main substrate 8 is disposed so as to face the surface 3 b of the solid-state imaging device 3, and the first connection terminal 9 of the solid-state imaging device 3 and the second connection terminal 11 of the main substrate 8 are connected via the protruding electrode 10. The connection portion between the solid-state imaging device 3 and the main substrate 8 is fixed by the sealing resin 4.

メイン基板8と固体撮像素子3の接合部の片側に形成したキャビティ部7に電子部品6が複数個配置されており、メイン基板8の第3接続端子13と接合材12を介して電気的に接続している。   A plurality of electronic components 6 are arranged in a cavity 7 formed on one side of a joint between the main board 8 and the solid-state imaging device 3, and are electrically connected to the third connection terminals 13 of the main board 8 via the joining material 12. Connected.

また、メイン基板8には複数のケーブル接続端子14が形成されている。
<キャビティ部7>
キャビティ部7のサイズは、1.0mm×0.7mm×厚さ0.35mmであり、電子部品6がキャビティ部7内に収まることにより、固体撮像装置の幅寸法を固体撮像素子3の幅寸法と同じに保つことができる。
Further, a plurality of cable connection terminals 14 are formed on the main board 8.
<Cavity part 7>
The size of the cavity portion 7 is 1.0 mm × 0.7 mm × thickness 0.35 mm. When the electronic component 6 is accommodated in the cavity portion 7, the width of the solid-state imaging device is reduced to the width of the solid-state imaging device 3. And can be kept the same.

キャビティ部7は、メイン基板8の固体撮像素子3の第2接続端子11の片側に1個、形成されており、キャビティ部7の個数を減らすことでメイン基板8の製造工程を短縮することができる。
<封止樹脂4>
封止樹脂4は、エポキシ系の接着剤であり、幅寸法は固体撮像素子3と同じかそれ以下である。
One cavity 7 is formed on one side of the second connection terminal 11 of the solid-state imaging device 3 of the main substrate 8, and the manufacturing process of the main substrate 8 can be shortened by reducing the number of cavities 7. it can.
<Sealing resin 4>
The sealing resin 4 is an epoxy-based adhesive, and has a width dimension equal to or less than that of the solid-state imaging device 3.

また、図6(a)に示すように、メイン基板8と固体撮像素子3の第2接続端子11の端部に第1導体パターン5a、5bを形成し、キャビティ部7の端部に第2導体パターン5cを形成することによって、図6(b)に示すように、封止樹脂4がメイン基板8の外側に流れ落ちることを防いでいる。第2導体パターン5cは、第3接続端子13と異なる形状である。   6A, first conductor patterns 5a and 5b are formed at the ends of the main substrate 8 and the second connection terminals 11 of the solid-state imaging device 3, and the second conductor patterns 5a and 5b are formed at the ends of the cavity 7. By forming the conductive pattern 5c, the sealing resin 4 is prevented from flowing out of the main substrate 8 as shown in FIG. The second conductor pattern 5c has a shape different from that of the third connection terminal 13.

<第1導体パターン5a、5b、第2導体パターン5c>
第1導体パターン5a、5b、第2導体パターン5cは、例えばアルミニウムなどによって形成されているが、銅のようにアルミニウムよりも導電率が高い金属やタングステンを用いても良い。さらに、銅にニッケル/金めっき処理を施して酸化しにくい状態にしても良い。
<First conductor pattern 5a, 5b, second conductor pattern 5c>
The first conductor patterns 5a and 5b and the second conductor pattern 5c are made of, for example, aluminum or the like, but may be made of metal such as copper or tungsten having higher conductivity than aluminum. Further, the copper may be subjected to a nickel / gold plating treatment so that the copper is hardly oxidized.

第1導体パターン5a、5b、第2導体パターン5cは、第2接続端子11、第3接続端子13と同じ工程で形成するのが好ましい。   It is preferable that the first conductor patterns 5a and 5b and the second conductor pattern 5c are formed in the same process as the second connection terminal 11 and the third connection terminal 13.

また、第1導体パターン5a、5b、第2導体パターン5cは、メイン基板8と固体撮像素子3を接続する際に使用する実装機において、位置合わせの認識マークとしても使用される。第1導体パターン5a、5b、第2導体パターン5cの形状は第2接続端子11と異なる形状で、かつ、封止樹脂4がメイン基板8の外側に流れ落ちないような形状であることが望ましく、第1導体パターン5a、5bのサイズは、長手方向が0.3mm×0.1mm、短手方向が0.15mm×0.1mmのコーナーマークとなり、第1導体パターン5bのサイズは、0.1mm×0.08mmの長方形となり、第2導体パターン5cのサイズは、0.7mm×0.08mmの長方形となる。   The first conductor patterns 5a, 5b and the second conductor pattern 5c are also used as alignment recognition marks in a mounting machine used when connecting the main substrate 8 and the solid-state imaging device 3. It is desirable that the first conductor patterns 5a, 5b and the second conductor pattern 5c have a shape different from that of the second connection terminal 11 and a shape such that the sealing resin 4 does not flow outside the main substrate 8; The size of the first conductor patterns 5a and 5b is a corner mark of 0.3 mm × 0.1 mm in the longitudinal direction and 0.15 mm × 0.1 mm in the transverse direction, and the size of the first conductor pattern 5b is 0.1 mm. It becomes a rectangle of × 0.08 mm, and the size of the second conductor pattern 5c is a rectangle of 0.7 mm × 0.08 mm.

なお、実施の形態1の第1導体パターン5a,5bがなく、第2導体パターン5cだけ設けてもよい。   The first conductor patterns 5a and 5b of the first embodiment may not be provided, and only the second conductor pattern 5c may be provided.

(実施の形態3)
図7(a)、図7(b)は、本発明の実施の形態3における固体撮像装置の平面図であり、図7(a)が封止前、図7(b)が封止後である。説明しない事項は実施の形態1、2と同様である。
(Embodiment 3)
7 (a) and 7 (b) are plan views of a solid-state imaging device according to Embodiment 3 of the present invention. FIG. 7 (a) is before sealing, and FIG. 7 (b) is after sealing. is there. Items not described are the same as in the first and second embodiments.

<封止樹脂4>
封止樹脂4は、エポキシ系の接着剤であり、幅寸法は固体撮像素子3よりと同じかそれ以下である。
<Sealing resin 4>
The sealing resin 4 is an epoxy-based adhesive, and has a width equal to or smaller than that of the solid-state imaging device 3.

また、図7(a)に示すように、メイン基板8の端部に第1導体パターン5aを形成することによって、図7(b)に示すように、封止樹脂4は接合部の端部に形成された第1導体パターン5aの外側に流れ落ちることを防いでいる。   Also, as shown in FIG. 7A, by forming the first conductor pattern 5a at the end of the main substrate 8, as shown in FIG. To prevent the first conductive pattern 5a from flowing down to the outside.

さらに第1導体パターン5aにめっき処理を施すことにより、導体パターン5の端部まで封止樹脂4が濡れ広がり、フィレットCを形成している。   Further, by applying plating to the first conductive pattern 5a, the sealing resin 4 spreads to the end of the conductive pattern 5 to form a fillet C.

ここで、第2導体パターン5cはメイン基板8と固体撮像素子3を接続する際に使用する実装機において、位置合わせの認識マークとしても使用される。第1導体パターン5aの形状は第2接続端子11よりも大きな円形となる。   Here, the second conductor pattern 5c is also used as an alignment recognition mark in a mounting machine used when connecting the main substrate 8 and the solid-state imaging device 3. The shape of the first conductor pattern 5a is a circle larger than the second connection terminal 11.

また、封止樹脂4はメイン基板8の外側に流れ落ちなければ、キャビティ部7の領域に形成されていても良い。   Further, the sealing resin 4 may be formed in the region of the cavity portion 7 as long as it does not flow outside the main substrate 8.

<第1導体パターン5a>
第1導体パターン5aは、例えばアルミニウムなどによって形成されているが、銅のようにアルミニウムよりも導電率が高い金属やタングステンを用いても良い。さらに、銅にニッケル/金めっき処理を施して酸化しにくい状態にしても良い。
<First conductor pattern 5a>
The first conductor pattern 5a is formed of, for example, aluminum or the like, but may be a metal such as copper or a tungsten having a higher conductivity than aluminum. Further, the copper may be subjected to a nickel / gold plating treatment so that the copper is hardly oxidized.

また、第1導体パターン5aは、メイン基板8と固体撮像素子3を接続する際に使用する実装機において、位置合わせの認識マークとしても使用される。第1導体パターン5aの形状は第2接続端子11よりも大きな円形で、かつ、封止樹脂4がメイン基板8の外側に流れ落ちないような形状であることが望ましく、第2接続端子11のサイズが直径0.1mmであるのに対し、第1導体パターン5aのサイズは、直径0.2mmとなる。   The first conductor pattern 5a is also used as a recognition mark for alignment in a mounting machine used when connecting the main substrate 8 and the solid-state imaging device 3. The shape of the first conductive pattern 5a is desirably a circle larger than the second connection terminal 11 and a shape such that the sealing resin 4 does not flow out of the main substrate 8. Has a diameter of 0.1 mm, whereas the size of the first conductor pattern 5a has a diameter of 0.2 mm.

<効果>
上記の構造のように、接続端子を受光面の裏面に形成することで、固体撮像素子の受光面占有率が上がり、固体撮像の性能効率を損なうことがなく、更に、接続端子の端部に形成された導体パターンによって封止樹脂がメイン基板の側面に流れ落ちることなくメイン基板の端部までフィレットを形成することで、信頼性が高く、小型で高性能な固体撮像装置を提供することができる。
<Effect>
By forming the connection terminal on the back surface of the light receiving surface as in the above structure, the occupancy of the light receiving surface of the solid-state imaging device is increased, and the performance efficiency of the solid-state imaging is not impaired. By forming a fillet up to the end of the main substrate without the sealing resin flowing down to the side surface of the main substrate by the formed conductor pattern, it is possible to provide a highly reliable, compact, and high-performance solid-state imaging device. .

(全体として)
実施の形態1〜3は組み合わせできる。
(as a whole)
Embodiments 1 to 3 can be combined.

本願の固体撮像装置は、内視鏡用固体撮像装置など小型の固体撮像装置として、広く利用される。   The solid-state imaging device of the present application is widely used as a small-sized solid-state imaging device such as a solid-state imaging device for an endoscope.

1 カバーガラス
2 接着剤
3 固体撮像素子
3a 受光面
3b 面
4 封止樹脂
5 導体パターン
5a 第1導体パターン
5b 第1導体パターン
5c 第2導体パターン
6 電子部品
7 キャビティ部
8 メイン基板
9 第1接続端子
10 突起電極
11 第2接続端子
12 接合材
13 第3接続端子
14 ケーブル接続端子
21 カバープレート
22 固体撮像素子
22a 受光面
22b 接続端子
26 封止樹脂
32 可撓性基板
33 電子部品
REFERENCE SIGNS LIST 1 cover glass 2 adhesive 3 solid-state imaging device 3 a light receiving surface 3 b surface 4 sealing resin 5 conductive pattern 5 a first conductive pattern 5 b first conductive pattern 5 c second conductive pattern 6 electronic component 7 cavity 8 main board 9 first connection Terminal 10 Protrusion electrode 11 Second connection terminal 12 Bonding material 13 Third connection terminal 14 Cable connection terminal 21 Cover plate 22 Solid-state image sensor 22a Light receiving surface 22b Connection terminal 26 Sealing resin 32 Flexible substrate 33 Electronic component

Claims (8)

電気信号の授受を行うための第1接続端子を受光面に対して裏面に備えた固体撮像素子と、
前記固体撮像素子との電気的接続をするための第2接続端子と、電子部品が配置されるキャビティ部と、を持つメイン基板と、
前記第1接続端子の端部に形成された第1導体パターンと、
前記第1接続端子に形成された封止樹脂と、
を含む固体撮像装置。
A solid-state imaging device including a first connection terminal for transmitting and receiving an electric signal on a back surface with respect to a light receiving surface;
A main board having a second connection terminal for electrical connection with the solid-state imaging device, and a cavity in which electronic components are arranged;
A first conductor pattern formed at an end of the first connection terminal;
A sealing resin formed on the first connection terminal;
A solid-state imaging device including:
前記第2接続端子と、前記第1導体パターンとの形状が異なる請求項1記載の固体撮像装置。 The solid-state imaging device according to claim 1, wherein a shape of the second connection terminal is different from a shape of the first conductor pattern. 前記封止樹脂が、前記第1導体パターン上に濡れ広がっているが、前記固体撮像装置の側面にはみ出していない請求項1または2記載の固体撮像装置。 The solid-state imaging device according to claim 1, wherein the sealing resin is spread over the first conductor pattern but does not protrude from a side surface of the solid-state imaging device. 前記第1導体パターンは、前記メイン基板と固体撮像素子との位置合わせの認識マークである請求項1〜3のいずれか1項に記載の固体撮像装置。 4. The solid-state imaging device according to claim 1, wherein the first conductor pattern is a recognition mark for alignment between the main substrate and the solid-state imaging device. 5. 電気信号の授受を行うための第1接続端子を受光面に対して裏面に備えた固体撮像素子と、
前記固体撮像素子との電気的接続をするための第2接続端子と、電子部品が第3接続端子を介して配置されるキャビティ部と、を持つメイン基板と、
前記キャビティ部の端部に形成された第2導体パターンと、
前記電子部品を覆う封止樹脂と、
を含む固体撮像装置。
A solid-state imaging device including a first connection terminal for transmitting and receiving an electric signal on a back surface with respect to a light receiving surface;
A main board having a second connection terminal for making an electrical connection with the solid-state imaging device, and a cavity in which an electronic component is arranged via the third connection terminal;
A second conductor pattern formed at an end of the cavity,
A sealing resin covering the electronic component,
A solid-state imaging device including:
前記封止樹脂が、前記第2導体パターン上に濡れ広がっている請求項4記載の固体撮像装置。 The solid-state imaging device according to claim 4, wherein the sealing resin is spread over the second conductor pattern. 前記封止樹脂が、前記第2導体パターン上に濡れ広がっているが、前記固体撮像装置の側面にはみ出していない請求項4または5記載の固体撮像装置。 The solid-state imaging device according to claim 4, wherein the sealing resin is spread over the second conductor pattern, but does not protrude from a side surface of the solid-state imaging device. 前記キャビティが2箇所あり左右対称である請求項1〜7のいずれか1項に記載の固体撮像装置。
The solid-state imaging device according to claim 1, wherein the two cavities are bilaterally symmetric.
JP2018125684A 2017-10-20 2018-07-02 Solid-state imaging device Active JP7149489B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2018125684A JP7149489B2 (en) 2018-07-02 2018-07-02 Solid-state imaging device
PCT/JP2018/036629 WO2019077980A1 (en) 2017-10-20 2018-10-01 Solid-state imaging device
CN201880060819.3A CN111108744B (en) 2017-10-20 2018-10-01 Solid-state imaging device
EP18867857.7A EP3700196B1 (en) 2017-10-20 2018-10-01 Solid-state imaging device
US16/803,551 US11381767B2 (en) 2017-10-20 2020-02-27 Solid-state imaging device having electronic components mounted between a main substrate and an imaging element

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JP2001017389A (en) * 1999-07-07 2001-01-23 Olympus Optical Co Ltd Solid-state imaging device
WO2016129409A1 (en) * 2015-02-13 2016-08-18 ソニー株式会社 Imaging element, production method, and electronic device
JP2017094044A (en) * 2015-11-20 2017-06-01 オリンパス株式会社 Manufacturing method of semiconductor device, semiconductor device, and endoscope

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Publication number Priority date Publication date Assignee Title
JP2001017389A (en) * 1999-07-07 2001-01-23 Olympus Optical Co Ltd Solid-state imaging device
WO2016129409A1 (en) * 2015-02-13 2016-08-18 ソニー株式会社 Imaging element, production method, and electronic device
JP2017094044A (en) * 2015-11-20 2017-06-01 オリンパス株式会社 Manufacturing method of semiconductor device, semiconductor device, and endoscope

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