JP2020003461A - Board inspection device and board inspection method - Google Patents
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Abstract
Description
本発明は、基板検査装置および基板検査方法に関し、特に分割されたセラミック基板の欠陥を検査する基板検査装置および基板検査方法に関する。 The present invention relates to a substrate inspection apparatus and a substrate inspection method, and more particularly, to a substrate inspection apparatus and a substrate inspection method for inspecting a defect of a divided ceramic substrate.
車両用灯具などの技術分野では、光源として発光ダイオード（ＬＥＤ：Ｌｉｇｈｔ Ｅｍｉｔｔｉｎｇ Ｄｉｏｄｅ）を用いるものが普及し始めている。発光ダイオードは、電流を流して発光させると発熱し、温度上昇により発光波長が変化することや発光効率が低下することなどの問題が生じる。また、ＬＥＤチップの温度が上昇しすぎると、周囲の配線パターンや金属ワイヤ、ハンダ、封止樹脂等にも悪影響がおよび断線などの不良が発生するおそれもあった。 2. Description of the Related Art In a technical field such as a vehicle lamp, a device using a light emitting diode (LED) as a light source has begun to spread. A light emitting diode generates heat when it emits light by passing an electric current, and causes a problem such as a change in emission wavelength due to a rise in temperature and a decrease in luminous efficiency. Further, if the temperature of the LED chip rises excessively, there is a possibility that surrounding wiring patterns, metal wires, solder, sealing resin and the like are adversely affected, and defects such as disconnection may occur.
そこで、ＬＥＤチップからの熱を良好に放熱するために、熱伝導性が良好な基板上にＬＥＤチップを搭載し、ＬＥＤチップから放熱フィンなどの放熱部材に良好に熱を伝えて、ＬＥＤチップ周囲の温度上昇を抑制することも提案されている。熱伝導性が良好な基板の材料としては、銅などの金属材料が挙げられるが、絶縁性の確保や軽量化の観点からセラミック材料を用いるものも提案されている。 Therefore, in order to dissipate the heat from the LED chip satisfactorily, the LED chip is mounted on a substrate with good thermal conductivity, and the heat is transmitted well from the LED chip to heat dissipating members such as heat dissipating fins. It has also been proposed to suppress the temperature rise. As a material of the substrate having good thermal conductivity, a metal material such as copper can be cited, and a material using a ceramic material from the viewpoint of securing insulation and reducing the weight has been proposed.
セラミック材料を基板として用いる場合には、グリーンシートを焼成して大きいサイズの基板を得た後に、所望のサイズに分割することが一般的である。セラミック基板の分割では、大きなサイズの基板にダイシングブレードやレーザ加工機で溝等の分割起点を形成し、応力を加えることで分割起点に沿って基板を分割する方法が用いられる。しかし、このように分割されたセラミック基板では、分割時に基板周縁部や裏面などに欠けやクラックなどの不良が生じてしまう可能性がある。 When a ceramic material is used as a substrate, it is general that the green sheet is fired to obtain a large-sized substrate and then divided into desired sizes. In the division of the ceramic substrate, a method of forming a division starting point such as a groove with a dicing blade or a laser processing machine on a large-sized substrate and applying stress to divide the substrate along the division starting point is used. However, in such a divided ceramic substrate, there is a possibility that defects such as chipping and cracks may occur in the peripheral portion and the back surface of the substrate during the division.
このような不良が生じた基板を選別するために、従来から、配線パターンを形成してＬＥＤチップ等の電子部品を搭載した後に、セラミック基板の表面をカメラ等で撮像して、画像認識により不良を判別する基板検査装置と基板検査方法が提案されている（例えば、特許文献１等を参照）。 Conventionally, in order to select a substrate having such a defect, after forming a wiring pattern and mounting an electronic component such as an LED chip, the surface of the ceramic substrate is imaged with a camera or the like, and the defect is recognized by image recognition. There has been proposed a board inspection apparatus and a board inspection method for judging (see, for example, Patent Document 1).
図６は、従来技術の基板検査装置および基板検査方法の概要を説明する模式図である。従来の基板検査装置は、カメラ部１と照明部２を備えており、セラミック基板３の電子部品を搭載した面側から照明部２で光を照射し、カメラ部１でセラミック基板３の表面を撮像する。また、撮像したセラミック基板３の表面画像を画像認識させて、電子部品と配線パターンを判別するとともにセラミック基板３に生じた不良を判別する。 FIG. 6 is a schematic diagram illustrating an outline of a conventional board inspection apparatus and board inspection method. The conventional board inspection apparatus includes a camera unit 1 and an illumination unit 2. The illumination unit 2 irradiates light from the surface of the ceramic substrate 3 on which electronic components are mounted, and the camera unit 1 illuminates the surface of the ceramic substrate 3. Take an image. In addition, the surface image of the ceramic substrate 3 is image-recognized to determine an electronic component and a wiring pattern, and to determine a defect occurring in the ceramic substrate 3.
セラミック基板３は、ヒートシンク等の放熱部材上に搭載する際に、基板を接着剤等に接触させて加圧する工程を経るため、欠けやクラックが存在すると加圧時の応力で欠けやクラックが進行して、セラミック基板３が破損することや配線パターンが断線する等の不良が生じてしまう。 When the ceramic substrate 3 is mounted on a heat radiating member such as a heat sink, the substrate goes through a process of pressing the substrate by contacting with an adhesive or the like. As a result, defects such as breakage of the ceramic substrate 3 and disconnection of the wiring pattern occur.
しかし、上述した従来の基板検査装置および基板検査方法では、セラミック基板３の電子部品を搭載した面側における不良を判別するには適しているが、裏面側や周縁部に生じたクラックを良好に判別するのは困難であった。 However, the above-described conventional board inspection apparatus and board inspection method are suitable for determining a defect on the surface of the ceramic substrate 3 on which the electronic components are mounted, but are capable of satisfactorily preventing cracks generated on the back side or the peripheral portion. It was difficult to determine.
そこで本発明は、上記従来の問題点に鑑みなされたものであり、セラミック基板の分割時に生じた欠けやクラックを良好に判別することができる基板検査装置および基板検査方法を提供することを目的とする。 Therefore, the present invention has been made in view of the above-described conventional problems, and has as its object to provide a board inspection apparatus and a board inspection method that can satisfactorily determine a chip or a crack generated when a ceramic substrate is divided. I do.
上記課題を解決するために、本発明の基板検査装置は、分割されたセラミック基板の欠陥を検査する基板検査装置であって、前記セラミック基板の第１面側に配置されて、前記第１面を撮像するカメラ部と、前記第１面側に配置されて、前記第１面に対して光を照射する第１照射部と、前記第１面と反対側の第２面側に配置されて、前記第２面に対して光を照射する第２照射部と、前記カメラ部で撮像された画像を画像認識して欠陥の有無を判断する欠陥認識部を備えることを特徴とする。 In order to solve the above problem, a substrate inspection apparatus of the present invention is an inspection apparatus for inspecting a defect of a divided ceramic substrate, wherein the substrate inspection apparatus is disposed on a first surface side of the ceramic substrate and has a first surface. A camera unit that captures light, a first irradiation unit that is disposed on the first surface side and irradiates light to the first surface, and a first irradiation unit that is disposed on the second surface side opposite to the first surface. A second irradiating unit that irradiates the second surface with light, and a defect recognizing unit that recognizes an image captured by the camera unit to determine whether there is a defect.
このような本発明の基板検査装置では、セラミック基板の第１面側と第２面側にそれぞれ第１照射部と第２照射部を配置し、セラミック基板の両面から光を照射してカメラ部で第１面を撮像し画像認識で欠陥の有無を判断するため、セラミック基板の分割時に生じた欠けやクラックを良好に判別することができる。 In such a substrate inspection apparatus of the present invention, the first irradiating unit and the second irradiating unit are arranged on the first surface side and the second surface side of the ceramic substrate, respectively, and the camera unit emits light from both surfaces of the ceramic substrate. Since the first surface is imaged and the presence or absence of a defect is determined by image recognition, chipping or cracking that occurs when the ceramic substrate is divided can be satisfactorily determined.
また本発明の一態様では、前記カメラ部によって前記第１面を撮像する期間内に、前記第１照射部および前記第２照射部からの発光が含まれる。 In one embodiment of the present invention, light emitted from the first irradiating unit and the second irradiating unit is included in a period in which the camera unit captures an image of the first surface.
また本発明の一態様では、前記第１照射部から前記第１面に対して照射する光と、前記第２照射部から前記第２面に対して照射する光は、照射条件が異なっている。 In one embodiment of the present invention, light irradiated from the first irradiation unit to the first surface and light irradiated from the second irradiation unit to the second surface have different irradiation conditions. .
また本発明の一態様では、前記第１面の面積をＳ１とし、前記第２照射部において光を出射する光出射部の面積をＳ２とすると、Ｓ２≧Ｓ１×０．２の関係を満たす。 In one aspect of the present invention, the area of the first surface and S 1, when the area of the light emitting portion for emitting light and S 2 in the second irradiation unit, the S 2 ≧ S 1 × 0.2 Satisfy the relationship.
また上記課題を解決するために、本発明の基板検査方法は、分割されたセラミック基板の欠陥を検査する基板検査方法であって、前記セラミック基板の第１面側に配置された第１照射部で、前記第１面に対して光を照射する第１照射工程と、前記第１面と反対側の第２面側に配置された第２照射部で、前記第２面に対して光を照射する第２照射工程と、前記第１面側に配置されたカメラ部で、前記第１面を撮像する撮像工程と、前記撮像工程で撮像された画像を画像認識して欠陥の有無を判断する欠陥認識工程を備えることを特徴とする。 According to another aspect of the present invention, there is provided a substrate inspection method for inspecting a defect of a divided ceramic substrate, comprising: a first irradiation unit disposed on a first surface side of the ceramic substrate; A first irradiating step of irradiating the first surface with light, and a second irradiating unit arranged on the second surface side opposite to the first surface, and irradiating the second surface with light. A second irradiating step of irradiating, an imaging step of imaging the first surface by a camera unit arranged on the first surface side, and determining whether there is a defect by recognizing an image captured in the imaging step. And a defect recognition step.
本発明では、セラミック基板の分割時に生じた欠けやクラックを良好に判別することができる基板検査装置および基板検査方法を提供することができる。 According to the present invention, it is possible to provide a substrate inspection apparatus and a substrate inspection method that can satisfactorily determine a chip or a crack generated when a ceramic substrate is divided.
（第１実施形態）
以下、本発明の実施の形態について、図面を参照して詳細に説明する。各図面に示される同一または同等の構成要素、部材、処理には、同一の符号を付すものとし、適宜重複した説明は省略する。図１は、本発明の第１実施形態における基板検査装置の概要を説明する模式図である。
(1st Embodiment)
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The same or equivalent components, members, and processes shown in the drawings are denoted by the same reference numerals, and the repeated description will be omitted as appropriate. FIG. 1 is a schematic diagram illustrating an outline of a substrate inspection apparatus according to a first embodiment of the present invention.
図１に示すように本実施形態の基板検査装置は、カメラ部１１と、第１照射部１２と、第２照射部１４を備え、第１照射部１２と第２照射部１４との間に配置したセラミック基板１３を検査する。セラミック基板１３は、第１面１３ａ（表面）と第２面１３ｂ（裏面）を有しており、第１面１３ａ側にカメラ部１１および第１照射部１２が配置され、第２面１３ｂ側に第２照射部１４が配置されている。 As shown in FIG. 1, the substrate inspection apparatus according to the present embodiment includes a camera unit 11, a first irradiation unit 12, and a second irradiation unit 14, and is provided between the first irradiation unit 12 and the second irradiation unit 14. The placed ceramic substrate 13 is inspected. The ceramic substrate 13 has a first surface 13a (front surface) and a second surface 13b (back surface). The camera unit 11 and the first irradiation unit 12 are disposed on the first surface 13a side, and the second surface 13b side. The second irradiating unit 14 is disposed at the second position.
カメラ部１１は、画像を撮像する装置であり、ＣＣＤ（Ｃｈａｒｇｅｄ−ｃｏｕｐｌｅｄ ｄｅｖｉｃｅｓ）や ＣＭＯＳ（Ｃｏｍｐｌｅｍｅｎｔａｒｙ ｍｅｔａｌ−ｏｘｉｄｅ−ｓｅｍｉｃｏｎｄｕｃｔｏｒ）等の撮像素子とレンズ等の光学系を備えて、撮像した画像を電子データとして後述する制御部に伝達する。 The camera unit 11 is a device that captures an image. The camera unit 11 includes an imaging device such as a CCD (Charged-coupled devices) or a CMOS (Complementary metal-oxide-semiconductor) and an optical system such as a lens. To the control unit described later.
第１照射部１２は、カメラ部１１の近傍に設けられて、セラミック基板１３の第１面１３ａに対して光を照射する照明装置であり、例えばＬＥＤ照明などを用いることができる。第１照射部１２から照射される光は限定されず、カメラ部１１で撮像可能な波長範囲であればよく、可視光（約３８０ｎｍ〜約８１０ｎｍ）の波長域であれば、単色も混色も白色でもよい。第１照射部１２の形状や位置は特に限定されないが、セラミック基板１３の第１面１３ａに良好に光を照射しつつ、カメラ部１１に光が直接入射しない位置と形状が好ましく、カメラ部１１からの同軸光やレンズ周囲を囲むリング照明、面照明などを用いることが好ましい。 The first irradiating unit 12 is a lighting device provided near the camera unit 11 and irradiating the first surface 13a of the ceramic substrate 13 with light. For example, LED lighting or the like can be used. The light emitted from the first irradiation unit 12 is not limited, and may be in a wavelength range that can be imaged by the camera unit 11. In the wavelength range of visible light (about 380 nm to about 810 nm), a single color or mixed color is white. May be. The shape and position of the first irradiating unit 12 are not particularly limited. However, while irradiating the first surface 13a of the ceramic substrate 13 with light satisfactorily, the position and shape where light does not directly enter the camera unit 11 are preferable. It is preferable to use coaxial light from the lens, ring illumination surrounding the lens, surface illumination, or the like.
セラミック基板１３は、セラミック材料で構成された面積Ｓ１の略平板状の部材であり、第１面１３ａと第２面１３ｂの面積は同等である。セラミック基板１３の第１面１３ａには配線パターンや電子部品が設けられるが、基板検査装置で欠陥の判別を行うのは、配線パターンを形成する前であってもよく、配線パターン形成と電子部品搭載を行った後であってもよい。しかし、セラミック基板１３にクラックや欠け等の不良が存在する場合には、配線パターン形成や電子部品搭載の工程で応力が加わって欠陥が進行している可能性があるため、配線パターン形成と電子部品搭載を行った後に検査を行うことが好ましい。 Ceramic substrate 13 is a substantially flat member of the area S 1 composed of a ceramic material, the area of the first surface 13a and the second surface 13b are equivalent. The first surface 13a of the ceramic substrate 13 is provided with a wiring pattern and electronic components. Defects may be determined by the board inspection apparatus before the wiring pattern is formed. It may be after mounting. However, when a defect such as a crack or a chip is present in the ceramic substrate 13, a stress may be applied in a process of forming a wiring pattern or mounting an electronic component, and the defect may progress. Inspection is preferably performed after component mounting.
第２照射部１４は、セラミック基板１３の第２面１３ｂ側に配置されて、第２面１３ｂに対して光を照射する照明装置であり、例えばＬＥＤ照明などを用いることができる。第２照射部１４から照射される光は限定されず、カメラ部１１で撮像可能な波長範囲であればよく、可視光（約３８０ｎｍ〜約８１０ｎｍ）の波長域であれば、単色も混色も白色でもよい。第２照射部１４の形状は、特に限定されずリング照明や線照明、面照明を用いることができるが、面積Ｓ２を有する面状の発光領域を有することが好ましい。また、点光源と光拡散部材や光反射部材を用いて、光が出射する領域の面積をＳ２としてもよい。 The second irradiator 14 is a lighting device that is arranged on the second surface 13b side of the ceramic substrate 13 and irradiates the second surface 13b with light, and for example, LED lighting or the like can be used. The light emitted from the second irradiation unit 14 is not limited, and may be in a wavelength range in which the image can be captured by the camera unit 11. In the wavelength range of visible light (about 380 nm to about 810 nm), both monochromatic and mixed colors are white. May be. Shape of the second radiation portion 14, particularly limited not ring lighting or illumination line, may be used a surface illumination, it is preferable to have a planar light emitting region having an area S 2. Further, by using a point light source and a light diffusing member and the light reflecting member, the area of the region for light emission may be S 2.
図２は、セラミック基板１３の周縁部に生じた欠陥１５を示す模式図であり、図２（ａ）は模式斜視図であり、図２（ｂ）は部分拡大断面図である。図２に示すように、セラミック基板１３の周縁部には、分割時に生じたクラックや欠けなどの欠陥１５が存在する場合がある。特に、図２（ａ）（ｂ）に示したようなセラミック基板１３の側面に欠陥１５が存在する場合には、第１面１３ａ側から光を照射しただけでは欠陥１５を識別することは困難である。また、セラミック基板１３の第２面１３ｂ側に欠陥１５が存在する場合も第１面１３ａ側から光を照射しただけでは欠陥１５を識別することは困難である。 FIG. 2 is a schematic view showing a defect 15 generated at a peripheral portion of the ceramic substrate 13, FIG. 2 (a) is a schematic perspective view, and FIG. 2 (b) is a partially enlarged sectional view. As shown in FIG. 2, a defect 15 such as a crack or a chip generated at the time of division may exist in the peripheral portion of the ceramic substrate 13. In particular, when the defect 15 exists on the side surface of the ceramic substrate 13 as shown in FIGS. 2A and 2B, it is difficult to identify the defect 15 only by irradiating light from the first surface 13a side. It is. Further, even when the defect 15 exists on the second surface 13b side of the ceramic substrate 13, it is difficult to identify the defect 15 only by irradiating light from the first surface 13a side.
そこで本実施形態では、図１に示したように第１照射部１２から第１面１３ａに対して光を照射し、第２照射部１４から第２面１３ｂに対して光を照射し、カメラ部１１でセラミック基板１３を撮像する。これにより、セラミック基板１３の裏面である第２面１３ｂや、セラミック基板１３の側面近傍である周縁部にも第２照射部１４からの光が十分に照射され、欠陥１５を鮮明化して良好に識別可能となる。 Therefore, in the present embodiment, as shown in FIG. 1, the first irradiating unit 12 irradiates the first surface 13a with light, and the second irradiating unit 14 irradiates light to the second surface 13b. The image of the ceramic substrate 13 is taken by the unit 11. As a result, the light from the second irradiating section 14 is sufficiently irradiated on the second surface 13b, which is the back surface of the ceramic substrate 13, and on the peripheral portion, which is near the side surface of the ceramic substrate 13, so that the defect 15 is sharpened. It becomes identifiable.
図３は、基板検査装置の概要を説明するブロック図である。基板検査装置は、カメラ部１１、第１照射部１２、第２照射部１４に加えて、搬送部１６と制御部１７を備えている。また、制御部１７には欠陥認識部１８が含まれている。 FIG. 3 is a block diagram illustrating an outline of the board inspection apparatus. The board inspection apparatus includes a transport unit 16 and a control unit 17 in addition to the camera unit 11, the first irradiation unit 12, and the second irradiation unit 14. Further, the control unit 17 includes a defect recognition unit 18.
搬送部１６は、セラミック基板１３を検査位置に供給し、検査後に所定位置に搬送する装置であり、ロボットアーム等の公知の技術を用いることができる。また搬送部１６は、制御部１７での良品と不良品の判別結果に応じて、検査対象であるセラミック基板１３の搬送先を変更できるとしてもよい。 The transport unit 16 is a device that supplies the ceramic substrate 13 to an inspection position and transports the ceramic substrate 13 to a predetermined position after the inspection. A known technique such as a robot arm can be used. In addition, the transfer unit 16 may be configured to be able to change the transfer destination of the ceramic substrate 13 to be inspected according to the result of the discrimination between the non-defective product and the defective product performed by the control unit 17.
制御部１７は、各種演算装置や内部記憶装置、外部記憶装置、情報通信手段等を備えた情報処理手段（コンピュータ）である。制御部１７は、カメラ部１１の内部に備えた情報処理手段として構成してもよく、外部に設けるとしてもよい。情報処理手段である制御部１７は、各種演算装置や内部記憶装置、外部記憶装置、情報通信手段等を用いてプログラムを実行し、カメラ部１１、第１照射部１２、第２照射部１４、搬送部１６の動作を制御する。また、制御部１７に保存されたプログラムによって、欠陥認識部１８が構成される。 The control unit 17 is an information processing unit (computer) including various arithmetic devices, an internal storage device, an external storage device, and an information communication unit. The control unit 17 may be configured as information processing means provided inside the camera unit 11 or may be provided outside. The control unit 17, which is an information processing unit, executes a program using various arithmetic devices, an internal storage device, an external storage device, an information communication unit, and the like, and executes a camera unit 11, a first irradiation unit 12, a second irradiation unit 14, The operation of the transport unit 16 is controlled. The program stored in the control unit 17 forms the defect recognition unit 18.
欠陥認識部１８は、カメラ部１１で撮像されたセラミック基板１３の画像を画像認識して、クラックや欠け等の欠陥１５が存在するか判別する。欠陥認識部１８での具体的な画像認識の手法は特に限定されず、公知の画像認識技術を用いることができる。 The defect recognition unit 18 recognizes the image of the ceramic substrate 13 captured by the camera unit 11 and determines whether or not a defect 15 such as a crack or a chip exists. A specific image recognition technique in the defect recognition unit 18 is not particularly limited, and a known image recognition technique can be used.
図４は、基板検査方法の工程を示すフローチャートである。ステップ１の基板搬送工程では、制御部１７が予め記憶されたプログラムに従って、搬送部１６を制御してセラミック基板１３を検査位置に搬送する。 FIG. 4 is a flowchart showing the steps of the substrate inspection method. In the substrate transfer step of Step 1, the control unit 17 controls the transfer unit 16 according to a program stored in advance to transfer the ceramic substrate 13 to the inspection position.
ステップ２の第１照射工程では、制御部１７は第１照射部１２を制御して、セラミック基板１３の第１面１３ａに対して光を照射する。第１照射工程での光の照射は、所定のタイミングおよび期間にわたって継続される。 In the first irradiation step of Step 2, the control unit 17 controls the first irradiation unit 12 to irradiate the first surface 13a of the ceramic substrate 13 with light. The light irradiation in the first irradiation step is continued over a predetermined timing and period.
ステップ３の第２照射工程では、制御部１７は第２照射部１４を制御して、セラミック基板１３の第２面１３ｂに対して光を照射する。第２照射工程での光の照射は、所定のタイミングおよび期間にわたって継続される。 In the second irradiation step of Step 3, the control unit 17 controls the second irradiation unit 14 to irradiate the second surface 13b of the ceramic substrate 13 with light. The light irradiation in the second irradiation step is continued for a predetermined timing and period.
ステップ４の撮像工程では、制御部１７はカメラ部１１を制御して、セラミック基板１３の第１面１３ａ側を撮像し、撮像した画像のデータを欠陥認識部１８に入力する。 In the imaging step of step 4, the control unit 17 controls the camera unit 11 to image the first surface 13 a side of the ceramic substrate 13 and inputs data of the imaged image to the defect recognition unit 18.
ステップ５の欠陥認識工程では、制御部１７は欠陥認識部１８の画像認識処理を実行し、撮像工程で取得したセラミック基板１３の画像から欠陥１５の有無を判別し、判別結果を保存する。 In the defect recognition step of step 5, the control unit 17 executes the image recognition processing of the defect recognition unit 18, determines the presence or absence of the defect 15 from the image of the ceramic substrate 13 obtained in the imaging step, and stores the determination result.
ステップ６の選別工程では、制御部１７は欠陥認識工程で得た判別結果に基づいて搬送部１６を制御し、欠陥１５が存在しない場合には良品として後工程にセラミック基板１３を搬送する。欠陥１５が存在する場合には、不良品としてセラミック基板１３を廃棄位置に搬送する。 In the selection process of step 6, the control unit 17 controls the transport unit 16 based on the determination result obtained in the defect recognition process, and transports the ceramic substrate 13 to the subsequent process as a non-defective product when the defect 15 does not exist. When the defect 15 exists, the ceramic substrate 13 is transported to a disposal position as a defective product.
図４では、ステップ２の第１照射工程、ステップ３の第２照射工程およびステップ４の撮像工程を別工程として示しているが、複数のステップを同時に実行するとしてよい。以上の工程により、本実施形態の基板検査装置および基板検査方法では、第１照射部１２と第２照射部１４からの光照射で欠陥１５を鮮明化し、セラミック基板の分割時に生じた欠けやクラックを良好に判別することができる。 In FIG. 4, the first irradiation step of step 2, the second irradiation step of step 3, and the imaging step of step 4 are shown as separate steps, but a plurality of steps may be executed simultaneously. According to the above steps, in the substrate inspection apparatus and the substrate inspection method according to the present embodiment, the defect 15 is sharpened by the light irradiation from the first irradiation unit 12 and the second irradiation unit 14, and the chip or crack generated when the ceramic substrate is divided is generated. Can be determined well.
（第２実施形態）
次に、本発明の第２実施形態について説明する。本実施形態では、第１照射部１２からセラミック基板１３の第１面１３ａに対して照射する光と、第２照射部１４からセラミック基板１３の第２面１３ｂに対して照射する光において、照射条件を異ならせる。
(2nd Embodiment)
Next, a second embodiment of the present invention will be described. In the present embodiment, the light irradiated from the first irradiation unit 12 to the first surface 13a of the ceramic substrate 13 and the light irradiated from the second irradiation unit 14 to the second surface 13b of the ceramic substrate 13 are irradiated. Make the conditions different.
第１照射部１２と第２照射部１４の照射条件が異なるとは、例えば、両者の光量が異なることや、発光波長が異なること、光を照射するタイミングが異なることが挙げられる。また、両者の形状が異なること、両者の面積が異なること、セラミック基板１３との距離が異なること、セラミック基板１３に照射する光の光軸が異なるとしてもよい。 The irradiation conditions of the first irradiation unit 12 and the second irradiation unit 14 are different, for example, that the light amounts of the two are different, that the emission wavelengths are different, and that the light irradiation timing is different. In addition, the two may have different shapes, the two may have different areas, the distance to the ceramic substrate 13 may be different, and the optical axis of the light applied to the ceramic substrate 13 may be different.
本実施形態では、第１照射部１２と第２照射部１４の照射条件を異ならせることで、セラミック基板１３の裏面や内部、周縁部に存在する欠陥１５を鮮明化するための第２照射部１４からの光を最適化することができる。これにより、第２照射部１４からの光照射でさらに欠陥１５を鮮明化し、セラミック基板の分割時に生じた欠けやクラックを良好に判別することができる。 In the present embodiment, the irradiation conditions of the first irradiation unit 12 and the second irradiation unit 14 are made different from each other, so that the second irradiation unit for clarifying the defect 15 existing on the back surface, inside, or the peripheral portion of the ceramic substrate 13. The light from 14 can be optimized. This makes it possible to further clarify the defect 15 by the light irradiation from the second irradiation unit 14 and satisfactorily determine a chip or a crack generated when the ceramic substrate is divided.
特に、セラミック基板１３の面積をＳ１とし、第２照射部１４において光を出射する光出射部の面積をＳ２としたときに、Ｓ２≧Ｓ１×０．２の関係を満たすように第２照射部１４の面積を確保することが好ましい。これにより、セラミック基板１３の第２面１３ｂ側から周縁部にかけて良好に光を照射することができ、第２照射部１４からの光照射でさらに欠陥１５を鮮明化し、周縁部での欠陥１５をさらに良好に判別することができる。 In particular, when the area of the ceramic substrate 13 is S 1 and the area of the light emitting portion that emits light in the second irradiation section 14 is S 2 , the relationship of S 2 ≧ S 1 × 0.2 is satisfied. It is preferable to secure the area of the second irradiation unit 14. Accordingly, light can be satisfactorily radiated from the second surface 13b side of the ceramic substrate 13 to the peripheral portion. It is possible to make a better determination.
（第３実施形態）
次に、本発明の第３実施形態について説明する。図５は、第１照射部と第２照射部での発光期間とカメラ部での撮像期間を示すタイミングチャートであり、図５（ａ）は同時照射を示し、図５（ｂ）は異なるタイミングでの照射を示している。
(Third embodiment)
Next, a third embodiment of the present invention will be described. FIG. 5 is a timing chart showing a light emission period in the first irradiation unit and the second irradiation unit and an imaging period in the camera unit. FIG. 5A shows simultaneous irradiation, and FIG. Indicate the irradiation at.
図５（ａ）に示した例では、第１照射部１２と第２照射部１４からの光照射のタイミングと継続時間が一致している。また、カメラ部１１での撮像タイミングは、第１照射部１２と第２照射部１４からの光照射が実施されている期間である。したがって、カメラ部によって第１面１３ａを撮像する期間内に、第１照射部１２および第２照射部１４からの発光が含まれている。換言すると、カメラ部１１は、第１照射部１２と第２照射部１４が発光する光を双方ともに取り込むタイミングで撮像を行っている。 In the example shown in FIG. 5A, the timing of light irradiation from the first irradiation unit 12 and the light irradiation from the second irradiation unit 14 coincide with the duration. The imaging timing of the camera unit 11 is a period during which light irradiation from the first irradiation unit 12 and the second irradiation unit 14 is being performed. Therefore, light emitted from the first irradiating unit 12 and the second irradiating unit 14 is included in a period in which the camera unit captures an image of the first surface 13a. In other words, the camera unit 11 performs imaging at a timing at which both the light emitted by the first irradiation unit 12 and the light emitted by the second irradiation unit 14 are captured.
カメラ部１１によって第１面１３ａを撮像する期間内に、第１照射部１２および第２照射部１４からの発光が含まれることで、一度の撮像によって第１照射部１２での第１面１３ａの検査と、第２照射部１４での欠陥１５判別を同時に実施することができ、検査速度の向上を図ることができる。また、セラミック基板１３の両面に対して光を照射したタイミングで撮像することで、欠陥１５をさらに鮮明化することもできる。 Since the light emitted from the first irradiating unit 12 and the second irradiating unit 14 is included in the period in which the camera unit 11 captures an image of the first surface 13a, the first surface 13a of the first irradiating unit 12 is captured by one image capturing. Inspection and the defect 15 determination in the second irradiation unit 14 can be performed simultaneously, and the inspection speed can be improved. In addition, by imaging at the timing of irradiating light to both surfaces of the ceramic substrate 13, the defect 15 can be further sharpened.
図５（ｂ）に示した例では、第１照射部１２と第２照射部１４からの光照射のタイミングが異なっており、両者の光照射が重なる期間にカメラ部１１は撮像を行っている。このように第１照射部１２と第２照射部１４の発光タイミングを異ならせても、カメラ部によって第１面１３ａを撮像する期間内に、第１照射部１２および第２照射部１４からの発光が含まれていることで、欠陥１５を鮮明化してセラミック基板の分割時に生じた欠けやクラックを良好に判別することができる。 In the example shown in FIG. 5B, the timings of light irradiation from the first irradiation unit 12 and the second irradiation unit 14 are different, and the camera unit 11 performs imaging during a period in which both light irradiations overlap. . Even if the light emission timings of the first irradiating unit 12 and the second irradiating unit 14 are made different from each other as described above, the light from the first irradiating unit 12 and the second irradiating unit 14 is not changed during the period in which the camera unit images the first surface 13a. Since the light emission is included, the defect 15 is sharpened, and a chip or a crack generated when the ceramic substrate is divided can be satisfactorily determined.
図５（ａ）（ｂ）では、第１照射部１２と第２照射部１４からの光照射のタイミングが重なる期間内で撮像を終了する例を示したが、カメラ部１１での撮像期間を長期間化してもよい。その場合にも、カメラ部１１での撮像期間内に、第１照射部１２と第２照射部１４が同時に発光する期間が含まれることが好ましい。 FIGS. 5A and 5B show an example in which the imaging is ended within a period in which the timings of light irradiation from the first irradiation unit 12 and the second irradiation unit 14 overlap. It may be longer. Also in this case, it is preferable that the period in which the first irradiation unit 12 and the second irradiation unit 14 emit light at the same time is included in the imaging period of the camera unit 11.
本発明は上述した各実施形態に限定されるものではなく、請求項に示した範囲で種々の変更が可能であり、異なる実施形態にそれぞれ開示された技術的手段を適宜組み合わせて得られる実施形態についても本発明の技術的範囲に含まれる。 The present invention is not limited to the above embodiments, and various modifications are possible within the scope shown in the claims, and embodiments obtained by appropriately combining the technical means disclosed in different embodiments. Is also included in the technical scope of the present invention.
１１…カメラ部
１２…第１照射部
１３…セラミック基板
１３ａ…第１面
１３ｂ…第２面
１４…第２照射部
１５…欠陥
１６…搬送部
１７…制御部
１８…欠陥認識部
Reference Signs List 11 camera unit 12 first irradiation unit 13 ceramic substrate 13a first surface 13b second surface 14 second irradiation unit 15 defect 16 transport unit 17 control unit 18 defect recognition unit
Claims (5)
前記セラミック基板の第１面側に配置されて、前記第１面を撮像するカメラ部と、
前記第１面側に配置されて、前記第１面に対して光を照射する第１照射部と、
前記第１面と反対側の第２面側に配置されて、前記第２面に対して光を照射する第２照射部と、
前記カメラ部で撮像された画像を画像認識して欠陥の有無を判断する欠陥認識部を備えることを特徴とする基板検査装置。 A board inspection apparatus for inspecting a defect of a divided ceramic substrate,
A camera unit disposed on the first surface side of the ceramic substrate and imaging the first surface;
A first irradiator disposed on the first surface side and irradiating light to the first surface;
A second irradiator that is disposed on a second surface side opposite to the first surface and irradiates the second surface with light;
A board inspection apparatus, comprising: a defect recognition unit that recognizes an image captured by the camera unit to determine whether there is a defect.
前記カメラ部によって前記第１面を撮像する期間内に、前記第１照射部および前記第２照射部からの発光が含まれることを特徴とする基板検査装置。 It is a board | substrate inspection apparatus of Claim 1, Comprising:
A substrate inspection apparatus, wherein light emitted from the first irradiating unit and the second irradiating unit is included in a period in which the camera unit captures an image of the first surface.
前記第１照射部から前記第１面に対して照射する光と、
前記第２照射部から前記第２面に対して照射する光は、照射条件が異なっていることを特徴とする基板検査装置。 It is a board | substrate inspection apparatus of Claim 1 or 2, Comprising:
Light emitted from the first irradiator to the first surface;
The substrate inspection apparatus, wherein the light irradiated from the second irradiation unit to the second surface has different irradiation conditions.
前記第１面の面積をＳ１とし、
前記第２照射部において光を出射する光出射部の面積をＳ２とすると、
Ｓ２≧Ｓ１×０．２の関係を満たすことを特徴とする基板検査装置。 It is a board | substrate inspection apparatus of Claim 3, Comprising:
The area of the first surface and S 1,
The area of the light emitting portion for emitting light when the S 2 in the second irradiation unit,
A substrate inspection apparatus characterized by satisfying a relationship of S 2 ≧ S 1 × 0.2.
前記セラミック基板の第１面側に配置された第１照射部で、前記第１面に対して光を照射する第１照射工程と、
前記第１面と反対側の第２面側に配置された第２照射部で、前記第２面に対して光を照射する第２照射工程と、
前記第１面側に配置されたカメラ部で、前記第１面を撮像する撮像工程と、
前記撮像工程で撮像された画像を画像認識して欠陥の有無を判断する欠陥認識工程を備えることを特徴とする基板検査方法。 A board inspection method for inspecting a defect of a divided ceramic substrate,
A first irradiation step of irradiating the first surface with light at a first irradiation unit arranged on a first surface side of the ceramic substrate;
A second irradiation step of irradiating the second surface with light at a second irradiation unit disposed on a second surface side opposite to the first surface;
An imaging step of imaging the first surface with a camera unit arranged on the first surface side;
A board inspection method comprising: a defect recognition step of recognizing an image captured in the imaging step to determine whether there is a defect.
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