JP2019536718A - 発光素子用の波長変換材料 - Google Patents
発光素子用の波長変換材料 Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 68
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 31
- 229910052788 barium Inorganic materials 0.000 claims abstract description 26
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 26
- 229910052693 Europium Inorganic materials 0.000 claims abstract description 17
- 239000000919 ceramic Substances 0.000 claims description 54
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 26
- 238000010438 heat treatment Methods 0.000 claims description 23
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- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 4
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- 238000003991 Rietveld refinement Methods 0.000 description 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- 239000010931 gold Substances 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
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- 150000004678 hydrides Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- HPNURIVGONRLQI-UHFFFAOYSA-K trifluoroeuropium Chemical compound F[Eu](F)F HPNURIVGONRLQI-UHFFFAOYSA-K 0.000 description 1
- 238000003826 uniaxial pressing Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77342—Silicates
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- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77347—Silicon Nitrides or Silicon Oxynitrides
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- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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Abstract
Description
発光ダイオード(LED)、共振空洞発光ダイオード(RCLED)、垂直共振器型レーザダイオード(VCSEL)、及び端面発光型レーザを包含する半導体発光デバイスは、現在利用可能な最も効率的な光源の1つである。可視スペクトルにわたって動作可能な高輝度発光デバイスの製造において現在関心のある材料系は、III−V族半導体、特にガリウム、アルミニウム、インジウム、及び窒素の二元、三元、及び四元合金を包含し、III族窒化物材料とも呼ばれる。典型的には、III族窒化物発光デバイスは、有機金属化学気相成長(MOCVD)、分子線エピタキシー、又は他のエピタキシャル技術によって、サファイア、炭化ケイ素、III族窒化物、又は他の適切な基板上に、異なる組成及びドーパント濃度の半導体層のスタックをエピタキシャル成長させることによって製造される。スタックは、基板上に形成された例えばSiでドープされた1以上のn型層、前記1以上のn型層上に形成された活性領域内の1以上の発光層、及び前記活性領域の上に形成された、例えばMgでドープされた1以上のp型層をしばしば包含する。電気接点がn型及びp型領域上に形成される。
琥珀色発光セラミック(Ba、Sr、Ca)2−xSi5−yAlyOyN8−y:Euxは、常圧焼成によって形成することができ、それはしばしば2つの相、
(1)発光(Ba1−xSrx)2−zSi5−yO4yN8−4y:Euz(258)相(0.5≦x≦0.9;0≦y≦1;0.001≦z≦0.02)、及び
(2)非発光(BA、SR)3Si3O3N4:Eu(3334)相、
を包含するセラミックをもたらす。前記3334相は、発光セラミックの量子収率(すなわち変換効率)を低下させる可能性があり、且つ湿った空気中で容易に加水分解する可能性があるため、望ましくない。加水分解はセラミックの表面上に白いフレークの形成をもたらす。白いフレークセラミックから漏れる光の望ましくない散乱を引き起こす可能性がある。また、セラミックタイルは、例えばシリコーンベース又はいずれの他の適切な接着剤又は接着剤層によって、LED又は他の構造にしばしば接着される。白色フレークは接着剤層の接着を減少させることができる。
琥珀色発光セラミックの合成:
94.1gのSi3N4(>98%)、0.895gのEu2O3(99.99%)、22.351gのSrH2(>99%)及び82.651gのBaH2(>99%)を、ボールミルで混合し、水素と窒素の混合物(5:95比)中で1450℃で焼成した。ボールミル粉砕後、粉末を2NのHClで洗浄し、水とアルコールでリンスする。乾燥後、相(phase)純粋な258粉末が得られる(斜方晶、精密格子定数: a=5.7585(4)Å、b=6.9158(8)Å、c=9.3635(4)Å、V=372.9058(4)Å3)。洗浄した粉末を次に分散助剤(Disperbyk)を用いて水中に分散させ、そして1.3(±0.2)μmの平均粒度にまで粉砕する。ポリビニルアルコールを用いて造粒した後、セラミックグリーン体ディスクを一軸加圧し、続いて空気中350℃で結合剤焼尽(burnout)工程を行う。水素及び窒素(5:95比)の混合物中で1650℃で焼結後、セラミックは、320μmの厚さに粉砕し、超音波浴中でクリーニングされる。
薄肉化したセラミックスを黒鉛炉で窒素(100MPa)中で1500℃で4時間アニールする。
Claims (14)
- (Ba1−xSrx)2−zSi5−yO4yN8−4y:Euz 258相波長変換材料(0.5≦x≦0.9;0≦y≦1;0.001≦z≦0.02)と、
M3Si3O3N4 3334相材料(M=Ba、Sr、Eu)と、
を含むセラミック材料であって、
前記M3Si3O3N4 3334相材料は、前記材料中に結晶相の総量の5重量%以下を含む、セラミック材料。 - 前記(Ba1−xSrx)2−zSi5−yO4yN8−4y:Euz 258相波長変換材料が、斜方晶格子測定基準及び1.1290と1.1205の間のセル定数比a*c/b2とを有する、請求項1に記載のセラミック材料。
- 前記材料が、IUC空間群Pmn21によって特徴付けられる格子対称性を有する、請求項1に記載のセラミック材料。
- 前記3384相材料のX線粉末回折ピークの強度と前記258相波長変換材料のX線粉末回折ピークの強度との比は0〜0.25の範囲内にある、請求項1に記載のセラミック材料。
- M2SiO4 BOSE相材料(M=Ba、Sr、Eu)をさらに含む請求項1に記載のセラミック材料であって、前記M2SiO4 BOSE相材料は前記材料の7重量%以下を含む、セラミック材料。
- MSi7N10 1710相材料(M=Ba、Sr、EU)をさらに含む請求項1に記載のセラミック材料であって、前記MSi7N10 1710相材料は前記材料の5重量%未満を含む、セラミック材料。
- 青色光を発光する発光ダイオードと、
前記青色光の経路に配置された波長変換セラミックと、
を含むデバイスであって、前記波長変換セラミックが、
(Ba1−xSrx)2−zSi5−yO4yN8−4y:Euz 258相波長変換材料(0.5≦x≦0.9;0≦y≦1;0.001≦z≦0.02)と、
M3Si3O3N4 3334相材料(M=Ba、Sr、Eu)と、
を含み、
前記M3Si3O3N4 3334相材料は、前記波長変換セラミックの5重量%以下を含む、デバイス。 - 前記波長変換セラミックがM2SiO4 BOSE相材料(M=Ba、Sr、Eu)をさらに含み、前記M2SiO4 BOSE相材料は前記波長変換セラミックの7重量%以下を含む、請求項7に記載のデバイス。
- 前記波長変換セラミックがMSi7N10 1710相材料(M=Ba、Sr、EU)をさらに含み、前記MSi7N10 1710相材料は前記波長変換セラミックの5重量%未満を含む、請求項7に記載のデバイス。
- 前記波長変換セラミックが琥珀色の光を放射する請求項7に記載のデバイスであって、前記デバイスが赤色光を放射する波長変換材料をさらに含む、デバイス。
- (Ba1−xSrx)2−zSi5−yO4yN8−4y:Euz 258相波長変換材料(0.5≦x≦0.9;0≦y≦1;0.001≦z≦0.02)と、
M3Si3O3N4 3334相材料(M=Ba、Sr、Eu)と、
を含むセラミックを調製するステップと、
セラミックを前記調製するステップの後、前記M3Si3O3N4 3334相材料の重量パーセントを減らすステップと、
を含む方法。 - 請求項11に記載の方法であって、前記M3Si3O3N4 3334相材料の重量パーセントを減らすステップは、前記セラミックを20〜300MPaの窒素圧下で0.5〜24時間1350〜1700℃の温度に加熱することを含む、方法。
- 請求項11に記載の方法であって、前記M3Si3O3N4 3334相材料の重量パーセントを減らすステップは、前記セラミックを50〜150MPaの窒素圧下で4〜8時間1450〜1550℃の温度に加熱することを含む、方法。
- 請求項11に記載の方法であって、前記M3Si3O3N4 3334相材料の重量パーセントを減らすステップは、前記重量パーセントを、前記セラミック中の全結晶相の10重量%以下に減らすことを含む、方法。
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