JP2019502239A - Multi-piece electrode opening - Google Patents

Abstract

  An optical plate for an ion implantation system comprises a pair of aperture assemblies. Each of the pair of opening assemblies includes a first opening member, a second opening member, and an opening fastener. The opening fastener fixes the first opening member to the second opening member. An opening tip may be fixed to the second opening member. One or more of the first opening member, the second opening member, the opening tip, and the opening fastener are refractory metal, (i) tungsten, tungsten, lanthanum-containing tungsten alloy, tungsten yttrium alloy, and / or (ii) One or more of graphite and silicon carbide are used. The aperture assembly may define an extraction electrode assembly, a ground electrode assembly, or other electrode assembly in an ion implantation system.

Description

Detailed Description of the Invention

[Reference to related applications]
This application is a provisional application of US Provisional Application No. 1 entitled “MULTI-PIECE ELECTRODE APERTURE”. Claims the benefit of 62 / 280,525 (filed Jan. 19, 2016). The entire contents of that application are incorporated herein by reference.

[Field]
The present invention relates generally to ion implantation systems, and more specifically to multi-piece electrode apertures associated with ion beam formation.

〔background〕
In the manufacture of semiconductor devices, ion implantation is used to dope semiconductors with impurities. In many cases, ion implantation systems are derived from an ion beam during integrated circuit fabrication to (i) cause n-type or p-type material doping, or (ii) form a passivation layer. It is used for the purpose of doping a workpiece (e.g. a semiconductor wafer) with ions. In many cases, such as to selectively implant impurities of a particular dopant material into a wafer at a predetermined energy level and at a controlled concentration to produce a semiconductor material during the manufacture of an integrated circuit. Beam processing is used. When an ion implantation system is used to dope a semiconductor wafer, the ion implantation system implants a selected ionic species inside the workpiece to produce the desired extrinsic material. By implanting ions generated from a source material such as antimony, arsenic, or phosphorus, a wafer of exogenous material of, for example, “n-type” can be obtained. On the other hand, wafers of “p-type” exogenous material are often obtained from ions generated using a source material such as boron, gallium, or indium.

  A typical ion implanter includes an ion source, an ion extraction device, a mass spectrometer, a beam transport device, and a wafer processing device. The ion source generates ions of the desired atomic or molecular dopant species. These ions are extracted from the source by an extraction system. The extraction system is typically a set of electrodes. The extraction system forms an ion beam by energizing and directing the flow of ions coming from the source and directing the flow of ions. In the mass spectrometer, desired ions are separated from the ion beam. The mass spectrometer is generally a magnetic dipole (dipole) that performs mass dispersion or mass separation on the extracted ion beam. An ion transport device is typically a vacuum system that includes a series of focusing devices. The ion transport apparatus transports the ion beam toward the wafer processing apparatus while maintaining desired characteristics of the ion beam. Eventually, the semiconductor wafer is transported into and out of the wafer processing apparatus using a wafer handling system. The wafer handling system may include one or more robot arms to place the wafer to be processed in front of the ion beam and to remove the processed wafer from the ion implanter.

  The extraction system in a conventional ion implantation system includes an electrode aperture plate. In general, an electrode aperture plate is a one-piece unit having a machined electrode aperture in the electrode aperture plate. For this reason, conventional electrode aperture plates are made up of a solid piece refractory metal or graphite having electrode apertures defined within the electrode aperture plate. Yes.

〔Overview〕
The present disclosure provides systems and apparatus related to forming an ion beam in an ion beam implantation system. The following presents a simplified summary of the invention in order to provide a basic understanding of some aspects of the invention. This summary is not an extensive overview of the invention. This summary is not intended to identify key points or key elements of the invention, nor is it intended to define the scope of the invention. The purpose of this summary is to present some concepts of the invention in a simplified form as a prelude to the more detailed description that is presented later.

  The present disclosure is generally directed to ion implantation systems and electrode devices (also referred to as optics plates). The electrode device includes a multi-piece electrode opening assembly. The electrode device may be configured as one or more of an extraction aperture, a suppression aperture, and a ground aperture associated with ion beam formation.

  According to one exemplary aspect of the present disclosure, the electrode device comprises a pair of aperture assemblies. Each of the pair of aperture assemblies includes a first aperture member and a second aperture member. For example, the first opening member is selectively connected to the second opening member by one or more opening fasteners. Accordingly, one or more of the first opening member and the second opening member can be selectively replaced without replacing (replacing) the remaining portions of the first opening member and the second opening member. it can.

  As an example, one or more of the first opening member, the second opening member, and the opening fastener includes one or more of a refractory metal, tungsten, tungsten lanthanum alloy, tungsten yttrium alloy, graphite, and silicon carbide. It is out.

  As another example, the opening fastener is made of a refractory metal. The opening fastener may include a screw and a bevel washer. In this case, the bevel washer still maintains the connection of these members while allowing thermal expansion of one or more of the first opening member, the second opening member, and the opening fastener.

  As an example, the first opening member is made of graphite or silicon carbide. The second opening member is made of one or more of a refractory metal, tungsten, a tungsten lanthanum alloy, and a tungsten yttrium alloy. As another example, a tip is further selectively connected to the second opening member. The tips are primarily exposed to the ion beam.

  The pair of aperture assemblies, for example, generally define one of an extraction electrode assembly and a ground electrode assembly. The first aperture member may be operably connected to the base plate, for example, by an aperture assembly fastener.

  According to another exemplary aspect, an ion implantation system is provided. The ion implantation system includes an ion source configured to form an ion beam and an optical plate configured to be exposed to the ion beam. In this case, the optical plate is configured as described above.

  Therefore, in order to achieve the above-mentioned object and related objects, the present invention is provided with a configuration fully described below and specifically shown in the claims. The following description and the annexed drawings set forth in detail certain illustrative embodiments of the invention. These embodiments illustrate some of the various approaches that may be employed in the principles of the present invention. Other objects, advantages and novel features of the present invention will become apparent from the following detailed description of the invention when considered in conjunction with the drawings.

[Brief description of the drawings]
FIG. 1 is a block diagram of an exemplary vacuum system utilizing an optical plate according to various aspects of the present disclosure.

  FIG. 2 illustrates an exemplary optical assembly according to another aspect.

  3A-3B illustrate an exemplary suppression electrode aperture assembly according to another aspect.

  4A-4B illustrate an exemplary ground electrode opening assembly according to another aspect.

  5A and 5B show top and backside / downstream views, respectively, of an exemplary suppression electrode aperture assembly according to another embodiment.

  6A and 6B show top and bottom / bottom views, respectively, of an exemplary ground electrode opening assembly according to another aspect.

[Detailed explanation]
The present disclosure is generally directed to ion implantation systems and electrode devices. The electrode device has a multi-piece electrode opening. The electrode device may be configured as one or more of an extraction aperture, a suppression aperture, and a ground aperture associated with the formation of the ion beam.

  The present invention will be described with reference to the drawings. Similar reference numbers may be used to consistently refer to similar components. The descriptions of the various aspects are to be understood as illustrative only and should not be construed in a limiting sense. In the following description, for the purposes of explanation, various specific details are set forth in order to provide a thorough understanding of the present invention. However, it will be apparent to those skilled in the art that the present invention may be practiced without these specific details. Furthermore, the scope of the present invention is not intended to be limited to the embodiments or examples described below with reference to the accompanying drawings. It is intended that the scope of the invention be limited only by the appended claims and their substantial equivalents.

  It should also be noted that the drawings are provided to give examples of various aspects of embodiments of the present disclosure. For this reason, the drawings should only be considered schematic. In particular, the members shown in the drawings are not necessarily drawn to scale. Also, the positions of the various members in the drawings have been selected to provide a clear understanding of each embodiment. For this reason, the position should not be interpreted as necessarily showing the actual relative positional relationship of various members in the implementation according to the embodiment of the present invention. Further, the configurations of the various embodiments and examples described herein may be combined with each other unless otherwise specified.

  Also, in the following description, any direct connection or coupling between functional blocks, devices, components, circuit elements, or other physical or functional units shown in the drawings or described in the specification is It should be noted that it may be realized by indirect connection or coupling. Furthermore, the functional blocks or units in the drawings may be implemented as individual configurations or circuits in certain embodiments. Alternatively, the functional block or unit may be realized as a common configuration or circuit in whole or in part in another embodiment.

  FIG. 1 illustrates an exemplary vacuum system 100 according to one aspect of the present disclosure. The vacuum system 100 of this embodiment includes an ion implantation system 101. However, various other types of vacuum systems (eg, plasma processing systems or other semiconductor processing systems) may also be considered. The ion implantation system 101 includes, for example, a terminal 102, a beam line assembly 104, and an end station 106.

  In general, an ion source (ion source) 108 in the terminal 102 is connected to a power source 110 for ionizing the dopant gas into a plurality of ions. The extraction electrode 111 extracts (extracts) positively charged ions from the ion source in order to form the ion beam 112. Individual electrodes close to the extraction electrode suppress backflow of (i) neutralizing electrons close to the source or (ii) neutralized electrons located behind the extraction electrode. To be biased. As described below, the extraction electrode 111 may include one or more of an extraction opening, a suppression opening, and a ground opening.

  The ion beam 112 in this embodiment is directed to pass through the beam steering device 114, exit the opening 116, and toward the end station 106. At the end station 106, the ion beam 112 impinges on a workpiece 118 (eg, a semiconductor such as a silicon wafer, a display panel, etc.). The workpiece is selectively clamped or attached to a chuck 120 (eg, electrostatic chuck or ESC). When implanted ions are embedded within the lattice of the workpiece 118, the implanted ions change the physical and / or chemical properties of the workpiece. For this reason, ion implantation is used in the manufacture of semiconductor devices and metal finishing as well as in various applications in materials science research.

  The ion beam 112 of the present disclosure can take any shape (eg, pencil beam, spot beam, ribbon beam, scan beam, or other shape). Ions in these shaped ion beams are directed to the end station 106. All of these shapes are considered to be within the scope of this disclosure.

  In one exemplary aspect, end station 106 includes a process chamber 122 (eg, vacuum chamber 124). A process environment 126 is associated with the process chamber. In general, the process environment 126 resides within the process chamber 122. As an example, the process environment 126 includes a vacuum generated by a vacuum source (vacuum source) 128 (eg, a vacuum pump). A vacuum source 128 is connected to the process chamber and is configured to sufficiently evacuate the process chamber. In addition, a controller 130 is provided for overall control of the vacuum system 100.

  FIG. 2 illustrates an exemplary extraction electrode assembly 200 (eg, extraction electrode 111 of FIG. 1) in accordance with aspects of the present disclosure. As shown in FIG. 2, the extraction electrode assembly 200 is illustrated as a blow up view. The extraction electrode assembly 200 includes a suppression electrode 202 and a ground electrode 204. Note that the extraction electrode assembly 200 may include any number of electrodes having many functions. Any such additional electrodes are considered to be within the scope of this disclosure. Furthermore, it should be noted that the suppression electrode 202 and the ground electrode 204 may be collectively referred to as “optics plates” 205. The optical plate is configured such that the extraction and formation of the ion beam 112 of FIG. 1 can be selectively controlled. Thus, as will be appreciated by one of ordinary skill in the art with reference to this disclosure, the following examples may be implemented in additional or alternative optical plates 205.

  As shown in FIG. 2, the suppression electrode 202 comprises a pair of suppression electrode aperture assemblies 206 (eg, they are substantially mirror images of each other). As shown in FIGS. 3A and 3B, in this example, each of the suppression electrode opening assemblies 206 includes a first suppression member 208 and a second suppression member 210. 5A and 5B show a front view 211A and a rear view 211B of the suppression electrode 202, respectively.

  As shown in FIG. 3B, the first restraining member 208 and the second restraining member 210 are operatively connected to each other by one or more restraining opening fasteners 212. The first restraining member 208 includes, for example, one or more restraining fixing openings 214 (eg, one or more screw holes). Thus, the one or more restraining aperture fasteners 212 are configured to selectively engage the one or more restraining fixing apertures to selectively secure the second restraining member 210 to the first restraining member 208. Is done. For example, one or more of (i) the first restraining member 208, (ii) the second restraining member 210, and (iii) one or more restraining opening fasteners 212 are made of a refractory metal (eg, tungsten). It is configured.

  The second restraining member 210 includes, for example, a recess 215 shown in FIG. 5B. For this reason, the one or more suppression opening fasteners 212 are disposed so as to be recessed into the second suppression member. As a result, it is possible to substantially prevent the ion beam 112 of FIG. 1 from colliding with the one or more suppression aperture fasteners. As a specific example, one or more of (i) the first restraining member 208, (ii) the second restraining member 210, and (iii) the restraining opening fastener 212 are made of a refractory metal (e.g., lanthanum-containing tungsten ( lanthanated tungsten), tungsten, or tantalum).

  Further, suppression electrode aperture assembly 206 is operatively connected to suppression base plate 216, for example, by one or more suppression assembly fasteners 218 shown in FIG. The one or more restraining assembly fasteners 218 are comprised of, for example, a refractory metal (eg, tungsten with lanthanum, tungsten, or tantalum). In this embodiment, the suppression base plate 216 is made of one or more of graphite (graphite) or silicon carbide (silicon carbide). The suppression base plate 216 includes, for example, one or more second suppression fixing openings 220. Each of the one or more suppression assembly fasteners 218 includes a first suppression fixing member 222 (eg, a screw) and a first suppression biasing member 224 (eg, a bevel washer). Each of the one or more restraint assembly fasteners 218 is configured to selectively engage, for example, one or more second restraint fixation openings 220 in the restraint base plate 216. Thus, the suppression electrode aperture assembly 206 can be selectively secured to the suppression base plate.

  In one exemplary aspect of the present disclosure, the first restraining biasing member 224 includes (i) a base plate 216, (ii) each first restraining fixing member 220, and (iii) a restraining electrode aperture assembly 206; In the meantime, a spring force is supplied. As an example, the spring force provided by the first restraining biasing member 224 generally ensures sufficient fixation when, for example, the length of the restraining assembly fastener 218 expands due to high temperatures.

  Similarly, the one or more restraining opening fasteners 212 shown in FIG. 3B may include a second restraining fixing member 226 (eg, a screw) and a second restraining biasing member 228 (eg, a bevel washer). Good. The second suppression urging member 228 supplies a spring force between, for example, (i) the first suppression member 208, (ii) the second suppression member 210, and (iii) the second suppression fixing member 226. Further configured to do. Similarly, the spring force generally ensures sufficient fixation when thermal expansion occurs due to temperature changes. Each first suppressing member 208 may further include a recess 230. Thus, for example, the one or more restraining assembly fasteners 218 are disposed so as to be recessed into the respective first restraining members. As a result, the impact of the ion beam 112 of FIG. 1 on the surface of the one or more restraining assembly fasteners can be substantially mitigated.

  According to the present disclosure, the first suppression member 208 and the second suppression member 210 are selectively connected to each other. For this reason, each of the first suppression member and the second suppression member can be individually replaced. For example, in the present disclosure, the first restraining member 208 and the second restraining member 210 of FIG. 2 are one of graphite, silicon carbide, and a refractory metal (eg, tungsten with lanthanum, tungsten, tungsten yttrium alloy, tantalum). The case where it comprises by the above is considered. Therefore, (i) the optical member such as the second suppression member 210 exposed to the collision with the ion beam 112 in FIG. 1 can be replaced more frequently, and (ii) the first suppression member 208, the base 206, etc. Can be reused. This saves costs compared to known devices. For example, the second suppression member 210 may be made of a refractory metal. On the other hand, the first suppressing member 208 may be made of graphite or silicon carbide. The same applies to the reverse case. Alternatively, the first suppression member 208 and the second suppression member 210 may be made of the same material (eg, graphite, silicon carbide, or refractory metal).

  4A and 4B illustrate the ground electrode 204 of FIG. 2 in accordance with another aspect of the present disclosure. In this case, the ground electrode includes a pair of ground electrode aperture assemblies 306 (eg, they are substantially mirror images of each other). 6A and 6B show a front view 311A and a rear view 311B of the ground electrode 202, respectively.

  Each ground electrode aperture assembly 306 includes a first ground member 308 and a second ground member 310 operatively connected to each other by one or more ground aperture fasteners 312, for example, as shown in FIG. 4B. The first ground member 308 includes, for example, one or more first ground fixing openings 314 (eg, one or more screw holes). Thus, the one or more ground opening fasteners 312 are selectively engaged with the one or more first ground securing openings to selectively secure the second ground member 310 to the first ground member 308. It is configured. For example, one or more of (i) the first ground member 308, (ii) the second ground member 310, and (iii) one or more ground opening fasteners 312 are made of a refractory metal (eg, tungsten). It is configured.

  The second ground member 310 includes, for example, a recess 315 shown in FIG. 6B. For this reason, the one or more grounding opening fasteners 312 are disposed so as to be recessed into the second grounding member. As a result, collision of the ion beam 112 of FIG. 1 with the one or more ground opening fasteners can be generally prevented. As one specific example, one or more of (i) a first ground member 308, (ii) a second ground member 310, and (iii) a ground opening fastener 312 are refractory metals (eg, tungsten with lanthanum, (Tungsten or tantalum).

  Further, the ground electrode opening assembly 306 is operatively connected to the ground base plate 316 by, for example, one or more ground assembly fasteners 318 shown in FIG. The one or more ground assembly fasteners 318 are made of, for example, a refractory metal (eg, lanthanum-containing tungsten, tungsten, or tantalum). In this embodiment, the ground base plate 316 is made of one or more of graphite or silicon carbide. The ground base plate 316 includes, for example, one or more second ground fixing openings 320. Each of the one or more ground assembly fasteners 318 includes a first ground fixing member 322 (for example, a screw) and a first ground biasing member 324 (for example, a bevel washer). For example, each of the one or more ground assembly fasteners 318 is configured to selectively engage one or more second ground securing openings 320 in the ground base plate 316. This allows the ground electrode opening assembly 306 to be selectively secured to the ground base plate.

  In accordance with one exemplary aspect of the present disclosure, the first ground biasing member 324 includes (i) a ground base plate 316, (ii) a respective first ground securing member 320, and (iii) a ground electrode opening assembly 306. The spring force is supplied between the two. The spring force provided by the first ground biasing member 324 generally ensures sufficient fixation, for example, when the length of the ground assembly fastener 318 expands due to high temperatures.

  Similarly, the one or more ground opening fasteners 312 shown in FIG. 4B may include a second ground securing member 326 (eg, a screw) and a second ground biasing member 328 (eg, a bevel washer). Good. The second ground biasing member 328 supplies a spring force between, for example, (i) the first ground member 308, (ii) the second ground member 310, and (iii) the second ground fixing member 326. Further configured to do. Similarly, the spring force generally ensures sufficient fixation when thermal expansion occurs due to temperature changes. Each first grounding member 308 may further include a recess 330. For this reason, the one or more grounding assembly fasteners 318 are arranged to be recessed into the first grounding member. As a result, collisions of the ion beam 112 of FIG. 1 with one or more ground opening fasteners can be substantially mitigated.

  According to the present disclosure, the first ground member 308 and the second ground member 310 are selectively connected to each other. For this reason, each of the first grounding member and the second grounding member can be individually replaced. For example, in the present disclosure, the first ground member 308 and the second ground member 310 of FIG. 2 are one of graphite, silicon carbide, and refractory metals (eg, tungsten with lanthanum, tungsten, tungsten yttrium alloy, tantalum). The case where it comprises by the above is considered. Therefore, (i) the optical member such as the second grounding member 310 exposed to the collision with the ion beam 112 in FIG. 1 can be replaced more frequently, and (ii) the first grounding member 308, the base 306, etc. Can be reused. This saves costs compared to known devices. For example, the second ground member 310 may be made of a refractory metal. Meanwhile, the first ground member 308 may be made of graphite or silicon carbide. The same applies to the reverse case. Alternatively, the first ground member 308 and the second ground member 310 may be made of the same material (eg, graphite, silicon carbide, or refractory metal).

  Thus, according to the present disclosure, the optical plate 205 is a consumable component in the ion implantation system 101 of FIG. The optical plate 205 has an electrode opening constituted by a multi-piece (a plurality of parts) (eg, the first suppressing member 208, the second suppressing member 210, the first grounding member 308, the second grounding member 310, etc.) provide. As a result, cost savings can be realized. Advantageously, the present disclosure can reduce machining set up time and reduce raw material consumption with such an optical plate 205. As a result, significant cost savings are achieved compared to conventional optics. For example, conventional electrode optics are made of a single and continuous (i) refractory metal (eg tungsten) or (ii) graphite or silicon carbide. Such conventional electrodes would be considered “consumable”. For this reason, the entire electrode will be replaced when worn.

  According to the present disclosure, individual members of the optical plate 205 can be easily replaced. In addition, the individual members of the optical plate 205 can be easily changed to other types of materials (eg, refractory metal, tungsten, tungsten, lanthanum alloy, tungsten yttrium alloy, etc.). For this reason, a member of the optical plate 205 that is exposed to wear (for example, a second suppression member or a second grounding member that is exposed to an ion beam or other medium) is replaced with another member (for example, a first suppression member or a first member). 1 grounding member) can be easily replaced at longer time intervals without replacement. Thus, advantageously, a cost savings for the refractory metal is realized. This is because in such exchange, the consumed material is sufficiently reduced.

  It will be further understood that additional restraining members (not shown) and / or additional grounding members (not shown) may be provided. In this case, such additional members of the optical plate can withstand maximum exposure to the ion beam. Such additional members, or “tips”, may be composed of a refractory metal. On the other hand, the remaining part (residual part) of the electrode may be made of graphite or a refractory metal. For example, the tip may be selectively connected to each of the second suppression member or the second grounding member in the same manner as the first suppression member / second suppression member and the first grounding member / second grounding member described above. This provides additional savings in consumables and costs. This is because the desired quality associated with the refractory metal can still be achieved while minimizing the amount of refractory metal consumed.

  Although the invention has been illustrated and described with respect to certain preferred embodiments, the above embodiments serve only as examples for the implementation of some embodiments of the invention, and Note that the application is not limited to these embodiments. In particular, with respect to the various functions provided by the above-described members (such as assemblies, devices, and circuits), the terms used to describe these members (including references to “means”) are: Unless specifically indicated, it is intended to correspond to any member that implements a particular function of the described member (ie, a functionally equivalent member). This is true even if the optional member is not structurally equivalent to the disclosed structure that implements the functions described herein in the exemplary embodiments of the invention. Furthermore, certain configurations of the invention may be disclosed with respect to only one of a plurality of embodiments. However, such configurations may be combined with one or more configurations of other embodiments where desired and beneficial for any or specific application. Therefore, the present invention should not be limited to the above-described embodiment. The present invention is intended to be limited only by the appended claims and equivalents thereof.

2 is a block diagram of an exemplary vacuum system utilizing an optical plate according to various aspects of the present disclosure. FIG. Fig. 3 illustrates an exemplary optical assembly according to another aspect. 6 illustrates an exemplary suppression electrode aperture assembly according to another aspect. 6 illustrates an exemplary suppression electrode aperture assembly according to another aspect. 6 illustrates an exemplary ground electrode opening assembly according to another aspect. 6 illustrates an exemplary ground electrode opening assembly according to another aspect. FIG. 4 shows a top view of an exemplary suppression electrode aperture assembly according to another aspect. FIG. 6 shows a back / down view of an exemplary suppression electrode aperture assembly according to another aspect. FIG. 6 shows a top view of an exemplary ground electrode opening assembly according to another aspect. FIG. 6 shows a back / down view of an exemplary ground electrode opening assembly according to another aspect.

Claims (18)

An optical plate for an ion implantation system,
The optical plate comprises a pair of aperture assemblies;
Each of the pair of aperture assemblies is
A first opening member;
A second opening member;
An opening fastener, and
The aperture fastener is an optical plate that selectively connects the first aperture member to the second aperture member.   One or more of the first opening member, the second opening member, and the opening fastener includes one or more of a refractory metal, tungsten, tungsten lanthanum alloy, tungsten yttrium alloy, graphite, and silicon carbide. The optical plate according to claim 1.   The optical plate according to claim 1, wherein the opening fastener is made of a refractory metal.   The optical plate of claim 1, wherein the pair of aperture assemblies defines an extraction electrode assembly.   The optical plate of claim 1, wherein the pair of aperture assemblies defines a ground electrode assembly.   The optical plate of claim 1, wherein the aperture fastener includes a screw and a bevel washer. A base plate,
The optical plate of claim 1, wherein the first aperture member is operatively connected to the base plate by an aperture assembly fastener. The first opening member is made of graphite or silicon carbide,
2. The optical plate according to claim 1, wherein the second opening member is made of one or more of a refractory metal, tungsten, a tungsten lanthanum alloy, and a tungsten yttrium alloy.   The optical plate according to claim 1, further comprising a tip selectively connected to the second opening member. An ion implantation system,
An ion source configured to form an ion beam;
An optical plate configured to be exposed to the ion beam,
The optical plate comprises a pair of aperture assemblies;
Each of the pair of aperture assemblies is
A first opening member;
A second opening member;
An opening fastener, and
The opening fastener selectively connects the first opening member to the second opening member.   One or more of the first opening member, the second opening member, and the opening fastener is one or more of a refractory metal, tungsten, tungsten, tungsten lanthanum alloy, tungsten yttrium alloy, graphite, and silicon carbide. The ion implantation system of claim 10, comprising:   The ion implantation system according to claim 10, wherein the opening fastener is made of a refractory metal.   The ion implantation system of claim 10, wherein the pair of aperture assemblies defines an extraction electrode assembly.   The ion implantation system of claim 10, wherein the pair of aperture assemblies defines a ground electrode assembly.   The ion implantation system of claim 10, wherein the opening fastener includes a screw and a bevel washer. A base plate,
The ion implantation system of claim 10, wherein the first aperture member is operably connected to the base plate by an aperture assembly fastener. The first opening member is made of graphite or silicon carbide,
The ion implantation system according to claim 10, wherein the second opening member is made of one or more of a refractory metal, tungsten, a tungsten lanthanum alloy, and a tungsten yttrium alloy. A tip selectively connected to the second opening member;
The ion implantation system of claim 10, wherein the tip is primarily exposed to the ion beam.

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