JP2019218598A - Vacuum arc vapor deposition apparatus and vacuum arc vapor deposition method - Google Patents

Abstract

To provide a vacuum arc vapor deposition technique capable of preventing film quality from deteriorating owing to an impact of a macroparticle generated when a columnar cathode member is used for a vacuum arc vapor deposition apparatus.SOLUTION: The present invention relates to a vacuum arc vapor deposition apparatus configured to: start an arc discharge with a trigger brought into contact with a cathode member; evaporate the cathode member with an arc spot formed on the cathode member as the arc discharge is generated so as to generate plasma; and deposit a material of the cathode member on a surface of a base material arranged opposite the cathode member to form a thin film. The vacuum arc vapor deposition apparatus comprises the columnar cathode member which protrudes toward the base material, and a plate-like shutter which also serves as a trigger, and is configured to allow the trigger to come into contact with a tip of the cathode member when the plate-like shutter rotates to nearby the tip of the cathode member, and also to have the plate-like shutter arranged between the cathode member and base material.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a vacuum arc evaporation apparatus and a vacuum arc evaporation method.

  A vacuum arc vapor deposition apparatus and a vacuum arc vapor deposition method are generally used for arc vapor deposition for forming a thin film on a substrate surface using arc discharge. FIG. 16 is a schematic view showing a conventional vacuum arc evaporation apparatus.

  As shown in FIG. 16, the conventional vacuum arc evaporation apparatus includes a vacuum chamber 31, a disk-shaped cathode member 32 made of a carbon material, power supplies 34 and 37, a trigger 35, and a pedestal portion 36. A substrate W is supported by a substrate support member 33 at a position facing the cathode member 32 in the vacuum chamber 31. A ring-shaped magnet 39 is arranged on the back side of the pedestal portion 36 for fixing the cathode member 32 so that a magnetic force is applied to the cathode member 32 during discharge.

  In this vacuum arc evaporation apparatus, after the inside of the vacuum chamber 31 is evacuated to a predetermined degree of vacuum by an exhaust system, the trigger 35 is brought into contact with the cathode member 32 while a negative voltage is applied to the cathode member 32 by the power source 37. After that, an arc discharge is generated between the vacuum chamber 31 also serving as an anode and the cathode member 32. As a result, an arc spot is formed on the cathode member 32, carbon as a constituent material of the cathode member 32 evaporates, and plasma is generated in the vacuum chamber 31. Then, the evaporated carbon is deposited on the surface of the substrate W, so that a thin film of carbon is formed on the substrate W.

  In recent years, in order to further expand the field of application of this thin film, it is required to increase the film thickness to, for example, 3.0 μm or more, compared to the conventional film. There has been proposed a configuration in which a thin columnar shape is formed, the columnar cathode member is inserted through a pedestal portion provided with an insertion hole, and the columnar cathode member is sequentially sent out toward a base material (for example, see Patent Document 1).

  FIG. 17 is a schematic view showing a vacuum arc vapor deposition apparatus provided with such a columnar cathode member. As shown in FIG. 17, in this vacuum arc vapor deposition apparatus, the columnar cathode member 2 is inserted into the insertion hole of the pedestal 6 and is held by the cathode holding member 7 outside the vacuum chamber 1. Further, a delivery mechanism 12 for sequentially delivering the cathode member 2 toward the front substrate W is provided behind the cathode holding member 7. In FIG. 17, 5 is a magnet, 15 and 16 are power supplies, and 17 is a resistor.

  With such a configuration, when the cathode member 2 becomes shorter as the film formation on the substrate W progresses, the delivery mechanism 12 sends the cathode member 2 toward the substrate W in front, thereby providing a longer time than before. Can be formed continuously, so that a thin film can be formed with a larger thickness than before. Specifically, when a thin film having a thickness of 3.0 μm or more is formed, the cathode member 2 is appropriately placed in the vacuum chamber 1 by the delivery mechanism 12 using the columnar cathode member 2 having a length of 150 to 600 mm. I send it out.

JP 2014-141697 A

  However, in the case where the above-described columnar cathode member is used, there is a problem that sparks occur frequently when the trigger 35 is brought into contact with the cathode member 2 at the start of arc discharge.

  That is, when such a spark occurs, particles (macro particles) having a large particle size are scattered, and the particles collide with the base material W, so that the surface of the base material W is damaged or the formed thin film is formed. The surface accuracy is deteriorated and the film quality is reduced.

  Therefore, an object of the present invention is to provide a vacuum arc vapor deposition technique that can prevent a decrease in film quality due to collision of macro particles that occurs when a columnar cathode member is used in a vacuum arc vapor deposition apparatus.

  In the case of the vacuum arc vapor deposition apparatus as shown in FIG. 17, it is very difficult to suppress the generation of spark itself due to the contact of the trigger 35. Therefore, the present inventor considered that it is better not to attach the scattered macroparticles to the base material W instead of suppressing the generation of sparks, and examined a specific method for preventing the attachment.

  As a result, when the trigger 35 is brought into contact with the cathode member 2 to start discharging, the shutter is disposed between the contact position (the tip of the cathode member 2) between the cathode member 2 and the trigger 35 and the substrate W. For example, it has been thought that the macro particles scattered at the start of the arc discharge can be blocked by the shutter to prevent the macro particles from adhering to the base material W.

  Specifically, a shutter (trigger / shutter) that doubles as a trigger is manufactured by attaching and integrating the trigger to a plate-shaped shutter, and the trigger / shutter is brought into contact with the cathode member 2 only at the start of arc discharge. On the other hand, during the film formation, the trigger / shutter is turned around the rotation axis to a position where the contact between the cathode member 2 and the substrate W is not shielded during the film formation. It was considered that the macro particles could be prevented from adhering to the base material W by moving, and as a result of the experiment, the effect was confirmed.

The invention described in claim 1 and claim 2 is based on the above findings, and the invention described in claim 1 is
The arc discharge is started by bringing the trigger into contact with the cathode member, plasma is generated by evaporating the cathode member with an arc spot formed on the cathode member along with the arc discharge, and the plasma is generated. A vacuum arc vapor deposition apparatus for forming a thin film by depositing the material of the cathode member on the surface of the disposed base material,
A column-shaped cathode member protruding toward the base material,
A plate-shaped shutter also serving as the trigger,
When the plate-shaped shutter rotates and approaches the tip of the cathode member, the trigger contacts the tip of the cathode member, and the plate-shaped shutter moves between the cathode member and the base material. A vacuum arc vapor deposition apparatus characterized by being configured to be arranged.

The invention described in claim 2 is
A shutter rotation mechanism for rotating the plate-shaped shutter is provided so that the plate-shaped shutter is disposed between the cathode member and the base material when the trigger is brought into contact with the cathode member. The vacuum arc vapor deposition apparatus according to claim 1, wherein:

  The use of the vacuum arc vapor deposition apparatus described above enabled the macro particles generated by the spark to be prevented from scattering to the base material.However, as the study progressed, the columnar cathode was spiraled due to repeated deposition by arc discharge. In the process of this consumption, during the film formation, broken pieces of the depleted cathode and stripped pieces of deposits deposited on the surface of the cathode (hereinafter, collectively referred to as “broken pieces, etc.”) ) Are scattered as macroparticles and are scattered to damage the surface of the base material, resulting in generation of defects (nebula-like defects) in a state where fine particles are scattered.

  Thus, the present inventors have further studied a technique for suppressing the occurrence of such nebula-like defects. Specifically, first, it is thought that if a shutter is arranged between the cathode member and the base material not only at the start of arc discharge but also during film formation, macro particles that cause nebula-like defects can be shielded. However, in this case, it was found that the shutter shielded not only the macroparticles but also the plasma for forming the hard carbon film, which was not a preferable method.

  Therefore, the present inventor studied a method of transporting the macroparticles to the substrate without shielding the plasma while shielding the plasma, and transported the beam-like plasma toward the substrate along the magnetic field generated by the magnet. It is noted that it has the characteristic of being performed. Then, when the magnet arranged on the back side of the pedestal portion is rotated, a dynamic magnetic field is formed around the cathode member and the direction of the magnetic field changes, so that it is possible to change the course of the plasma.

  That is, when a dynamic magnetic field is formed around the cathode member, the transport direction of the beam-like plasma changes according to the change in the direction of the magnetic field, so even if a shutter is arranged between the cathode member and the base material. The plasma can be transported to the substrate by bypassing the outside of the shutter and reach the surface.

  In addition, the position of the shutter, which was retracted to a position where the film formation was not hindered after the start of the arc discharge, was also examined. As a result, as shown in an example in FIG. 4, at the time of starting the arc discharge, the shutter 13 is brought into contact with the tip portion (first position: A) of the cathode member 2 in the same manner as described above, but after starting the arc discharge. During the film formation, the plate-shaped surface between the cathode member 2 and the substrate W is separated from the cathode member 2 toward the substrate W so as to face the cathode member 2 (second position: B). It has been found that if the shutter 13 is supported so as to be able to approach / separate from the cathode member 2 so that the shutter 13 is disposed in the vicinity, broken pieces and the like can be sufficiently shielded by the shutter 13.

The invention according to claim 3 is based on the above findings,
The arc discharge is started by bringing the trigger into contact with the cathode member, plasma is generated by evaporating the cathode member with an arc spot formed on the cathode member along with the arc discharge, and the plasma is generated. A vacuum arc vapor deposition apparatus for forming a thin film by depositing the material of the cathode member on the surface of the disposed base material,
A column-shaped cathode member protruding toward the base material,
A plate-shaped shutter also serving as the trigger,
A shutter support mechanism that supports the shutter between the cathode member and the approachable / separable toward the cathode member,
A moving magnetic field forming means for moving a magnet arranged on the back side of the cathode member to form a moving magnetic field around the cathode member,
The shutter contacts the cathode member at a first position between the cathode member and the substrate at the start of arc discharge, and then is more grounded than the first position between the cathode member and the substrate during arc discharge. Placed at the second position on the material side,
The vacuum magnetic vapor deposition apparatus is characterized in that the dynamic magnetic field forming means forms a dynamic magnetic field so that the plasma can be guided to the surface of the base material by bypassing the shutter disposed at the second position. .

  As a material for the shutter, a material having a high melting point and conductivity which is not melted even by plasma, for example, molybdenum, carbon, tungsten or the like is preferably used, and by using a shutter formed of these materials, Scattering to the substrate can be effectively prevented.

That is, the invention described in claim 4 is:
4. The vacuum arc vapor deposition apparatus according to claim 1, wherein the shutter is formed of any one of molybdenum, carbon, and tungsten. 5.

  When the cathode member is carbon, it is preferable to use glassy carbon or laminated carbon as a material for the cathode member. Since such glassy carbon does not have a grain boundary, it is difficult for sparks to be generated from the cathode member at the start of arc discharge, and it is possible to more appropriately prevent macro particles from scattering.

That is, the invention described in claim 5 is
The vacuum arc evaporation apparatus according to any one of claims 1 to 4, wherein the cathode member is made of glassy carbon or laminated carbon.

  The invention described in claim 3 can be considered as follows from the aspect of the method.

That is, the invention according to claim 6 is
A method for forming a hard carbon film using the vacuum arc evaporation apparatus according to claim 3,
At the start of arc discharge, the shutter is arranged at the first position on the cathode member, and the trigger of the shutter is brought into contact with the cathode member,
During the arc discharge, the shutter is arranged at the second position,
During the arc discharge, the dynamic magnetic field formed by the dynamic magnetic field forming means causes the plasma generated by the arc discharge to reach the substrate while bypassing a shutter arranged at the second position. A method for forming a hard carbon film, comprising forming a film on a substrate.

  According to the above method, it is possible to prevent macro particles such as broken pieces emitted from the above-described cathode member 2 from scattering and reaching the base material. A decrease in film speed is inevitable. Therefore, as a method of performing more efficient film formation, the present inventor pays attention to the fact that macro particles such as broken pieces are periodically emitted, and sets a shutter when no macro particles are emitted. It has been considered that the shutter should be retracted from the second position to the third position where the space between the cathode member and the base material is not shielded, and the shutter should be disposed at the second position in accordance with the cycle in which macro particles are emitted. Thus, it is possible to prevent the occurrence of defects due to macro particles such as broken pieces while minimizing the decrease in film formation efficiency.

That is, the invention described in claim 7 is:
A method for forming a hard carbon film using the vacuum arc evaporation apparatus according to claim 3,
At the start of arc discharge, the shutter is arranged at the first position,
During the arc discharge, the shutter is arranged at a third position that does not shield between the cathode member and the base material, and the shutter is arranged at the second position in accordance with the emission period of macro particles from the cathode member. This is a method for forming a hard carbon film, characterized in that the film is formed by heating.

  ADVANTAGE OF THE INVENTION According to this invention, the vacuum arc vapor deposition technique which can prevent the fall of film quality by vapor deposition of a macroparticle which arises when using a columnar cathode member in a vacuum arc vapor deposition apparatus can be provided.

It is a schematic diagram showing the composition of the vacuum arc evaporation system concerning a 1st embodiment of the present invention. It is a front view showing an example of the shape of a shutter. It is a front view which shows another example of the shape of a shutter. It is a schematic diagram showing the composition of the vacuum arc evaporation system concerning a 2nd embodiment of the present invention. It is the schematic diagram which looked at the shutter at the time of the start of arc discharge and at the time of arc discharge from the side. It is a top view which shows the stop position of the shutter at the time of performing arc discharge. It is a figure explaining the structure around the cathode member of a vacuum arc vapor deposition device. It is a figure explaining the structure around the cathode member of a vacuum arc vapor deposition device. It is a figure explaining threshold-value T1 and T2 with respect to distance d1 from a magnet to the front-end | tip of a cathode member. It is a figure showing an example of the measurement result of the discharge voltage during arc discharge. FIG. 10 is a diagram illustrating a calculation result of an average value of 50-point data of the measurement result of FIG. 9. It is a schematic diagram showing the composition of the vacuum arc evaporation system concerning a 4th embodiment of the present invention. It is a figure which shows typically the vacuum arc vapor deposition apparatus used in Experiment 2. FIG. 9 is a view showing the result of measuring the size of particles constituting a thin film formed in Experiment 2. FIG. 6 is a diagram showing the results of measuring the film thickness distribution of a thin film formed under a static magnetic field condition. FIG. 9 is a diagram showing the results of measuring the film thickness distribution of a thin film formed under the condition of a dynamic magnetic field. It is the schematic which shows the structure of the conventional vacuum arc vapor deposition apparatus. It is the schematic which shows the structure of the vacuum arc vapor deposition apparatus using the columnar cathode member.

  Hereinafter, the present invention will be described based on embodiments with reference to the drawings.

[1] First Embodiment Overview of First Embodiment First, a basic structure of a vacuum arc evaporation apparatus according to a first embodiment will be described. FIG. 1 is a schematic diagram showing a configuration of a vacuum arc evaporation apparatus according to the first embodiment. In the vacuum arc vapor deposition apparatus according to the present embodiment, the movable shutter 13 having the trigger 14 and the shutter support mechanism 42 are replaced with the trigger 35 (FIG. 17) conventionally fixed near the cathode member 2. Except for the point provided, it is common to the vacuum arc evaporation apparatus shown in FIG. In FIG. 1, reference numeral 1a denotes an exhaust port for evacuating the vacuum chamber 1.

2. Characteristic Portion of Vacuum Arc Vapor Deposition Apparatus of First Embodiment (1) Shutter As shown in FIG. 1, in a vacuum arc vapor deposition apparatus according to the present embodiment, a trigger 14 is provided on a shutter 13, The shutter doubles as a trigger. Accordingly, when the trigger 14 is brought into contact with the cathode member 2, even if macro particles are generated from the cathode member 2, the shutter 13 blocks the scattering of the macro particles in the direction of the base material. Can be prevented from adhering.

  In the present embodiment, the shutter 13, which is a plate-shaped trigger and shutter provided with the trigger 14, is disposed below the cathode member 2 and is provided to be rotatable toward the cathode member 2. Two specific examples of such a shutter are shown in FIGS. 2A and 2B. As shown in FIGS. 2A and 2B, the shutter 13 of the present embodiment is a rectangular or disk-shaped member, and its size, for example, the side lengths l and w of the shutter shown in FIG. The base material W is appropriately determined such that the base material W is hidden by the shutter 13 when viewed from the spark generation source of the cathode member 2 (FIG. 1). A trigger 14 made of molybdenum (Mo) is attached to a central portion of the surface of the shutter 13 on the side of the cathode member 2 (FIG. 1). The trigger 14 is connected to the power supply 16 via the shutter 13 and the shutter support mechanism 42 as shown in FIG.

  As shown in FIG. 1, the shutter 13 is rotatably supported by a shutter support mechanism 42, and the shutter support mechanism 42 includes a motor (not shown), a support shaft 42b, and a rotation shaft 42c. By operating the motor, the shutter 13 attached to the rotating shaft 42c is rotated about the rotating shaft 42c as a rotation center as shown by an arrow in the figure, and the trigger 14 provided on the shutter 13 contacts the cathode member 2. Can be done.

  When the arc discharge is started, the trigger 13 is brought into contact with the tip of the cathode member 2 by rotating the shutter 13 as described above. At this time, a spark is generated from the cathode member 2 as in the conventional case, but the shutter 13 is disposed between the cathode member 2 and the base material W while the trigger 14 is in contact with the cathode member 2. Therefore, the macro particles generated by the spark are not blocked by the shutter 13 and adhere to the base material W.

  When the film is formed, the shutter 13 is turned in a direction away from the cathode member 2 about the rotation shaft 42c as a rotation center, so that the shutter 13 can be disposed at a position where the space between the cathode member 2 and the base material W is not shielded. It is possible to form a film without blocking the transport of plasma generated from the member to the substrate W, and to produce a high-quality thin film on the surface of the substrate W.

  Further, as in the present embodiment, the shutter 13 is integrated with the trigger 14 to form a trigger and shutter, so that the operation of bringing the trigger 14 into contact with the cathode member 2 and the operation of the shutter 13 The operation of arranging between the members can be performed simultaneously. When the shutter 13 and the trigger 14 are integrated as described above, it is not necessary to provide a complicated mechanism for operating the shutter and the trigger in synchronization with each other, which can contribute to a reduction in equipment cost.

  The trigger 14 is preferably made of a metal having a high melting point, such as W or Ta, or a material having a high melting point and conductivity, such as C, in addition to Mo described above.

(2) Cathode Member The material of the cathode member is not particularly limited, but when carbon is used as the material, it is preferable that the cathode member is made of glassy carbon or laminated carbon.

3. As described above, in the vacuum arc vapor deposition apparatus according to the present embodiment, the shutter 13 is disposed between the cathode member 2 and the base material W when starting arc discharge. It is possible to solve the problem of macro particles generated at the start of arc discharge which occurs when a columnar cathode member as shown in FIG. 17 is used, and the shutter 13 shields plasma generated from the cathode member 2 during film formation. Since the film formation by the plasma is not suppressed by moving to a position where no thin film is formed, a high-quality thin film can be stably and efficiently formed.

[2] Second embodiment 1. Outline of Second Embodiment FIG. 3 is a schematic diagram illustrating a configuration of a vacuum arc evaporation apparatus according to a second embodiment. As shown in FIG. 3, the basic structure of the vacuum arc evaporation apparatus according to the present embodiment is the same as that of the vacuum arc evaporation apparatus according to the first embodiment.

  However, the vacuum arc evaporation apparatus according to the present embodiment is different from the first embodiment in that the arrangement of the shutter 13 during the film formation is changed from that of the first embodiment, and the dynamic arc magnetic field forming means is provided. This is different from the vacuum arc evaporation apparatus according to the first embodiment.

  As described above, the shutter 13 whose example is shown in FIG. 4 is arranged at the first position A where the shutter member 13 comes into contact with the cathode member 2 from the base material side at the start of arc discharge, as in the first embodiment. During arc discharge (during film formation), it is arranged at a second position B slightly away from the cathode member 2 toward the substrate W.

  The dynamic magnetic field forming means is provided so as to rotate the magnet 5 to form a dynamic magnetic field around the cathode member 2 as shown in FIG. By forming such a dynamic magnetic field, while the macro particles such as broken pieces are shielded by the shutter 13, the beam-shaped plasma 9 generated by the arc discharge is bypassed by the shutter 13 arranged at the second position B. Therefore, a thin film of higher quality can be stably formed.

2. Characteristic Portion of Vacuum Arc Vapor Deposition Apparatus of Second Embodiment (1) Shutter As shown in FIG. 3, the shutter 13 is a plate-shaped trigger and shutter having a trigger 14, and is connected to a power supply 16. ing. The arc discharge is started by bringing the trigger 14 provided at the center portion into contact with the cathode member 2, and after the start, the shutter 13 is slightly separated from the cathode member 2 to cause the arc discharge between the cathode member 2 and the vacuum chamber 1. Is started.

  The shutter 13 is disposed between the cathode member 2 and the substrate W at the start of arc discharge and at the time of film formation, and shields macro particles scattered from the spark source toward the substrate W when a spark is generated. Also, broken pieces of mm order size may fly from the cathode member 2 at the time of arc discharge, and a nebula-like defect composed of many fine particles is generated on the surface of the base material. By blocking such macro particles, the occurrence of such defects is prevented.

  As in the case of the first embodiment, the shape of the shutter 13 is appropriately determined according to the shape of the base material W so as to shield between the spark source and the base material W (see FIG. 2).

  As described above, FIG. 4 is a schematic diagram showing the position and attitude of the shutter 13 at the time of starting arc discharge and at the time of performing arc discharge, and FIG. 5 is a plan view showing the position of the shutter at the time of performing arc discharge. The shutter 13 is supported by a support mechanism 42 so as to be rotatable about a rotation axis 42 c perpendicular to the cathode member 2. When the arc discharge starts, the trigger 14 contacts the cathode member 2 at the first position A by approaching the cathode member 2, and the arc discharge starts. Thereafter, the shutter 13 is separated from the cathode member 2 and stops at a predetermined second position B between the cathode member 2 and the base material W in a posture in which the plate-shaped surface vertically faces the cathode member 2. .

  At the start of the arc discharge, the shutter 13 tilts toward the cathode member. The stop position of the shutter 13 is shown in FIG. 5 in consideration of the fact that the trigger 14 can be surely brought into contact with the cathode member 2 in such a tilted state and that the plasma easily bypasses the shutter 13. The distance a1 between the tip of the cathode member 2 and the shutter 13 is appropriately determined. That is, when the distance a1 between the tip of the cathode member 2 and the shutter 13 is large, it is difficult to reliably contact the trigger 14 with the cathode member at the start of arc discharge, and when it is small, it is difficult to bypass the plasma. On the other hand, if the distance a2 between the shutter 13 and the substrate W is small, it is difficult to bypass the plasma, and the size of the shutter 13 must be increased, so that the operability of movement is poor. Specifically, the distance a1 from the tip of the cathode member is set to about 15 mm.

  In the present embodiment, the size of the shutter 13, for example, the lengths l and w of the sides of the shutter shown in FIG. 2A are different from the spark source so that the base material W is hidden by the shutter 13 when viewed from the spark source. The distance a1 between the tip of the cathode member 2 and the shutter 13, the distance a2 between the shutter 13 and the substrate W, and the size of the substrate W are appropriately determined. It is preferable that the rod-shaped portion of the shutter 13 connected to the rotating shaft 42c be made as thin as possible so as not to hinder the detour of the plasma.

  As in the first embodiment, the material of the shutter 13 is a high melting point material that does not melt even by plasma and a material that can withstand the impact of scattered macro particles, for example, molybdenum, carbon, tungsten, or the like is used. Can be

  Then, by causing the shutter 13 to also serve as a trigger, an operation for bringing the trigger into contact with the cathode member 2 and the shutter 13 are disposed between the cathode member 2 and the base member, as in the first embodiment. The operations can be performed simultaneously. Further, since it is not necessary to provide a complicated mechanism for operating the shutter and the trigger in synchronization with each other, it is possible to contribute to a reduction in equipment cost.

(2) Shutter Support Mechanism The shutter support mechanism 42 is formed by arranging a support shaft 42b that rotatably supports the shutter 13 via a rotation shaft 42c in parallel with the cathode member 2, and a motor (not shown). ), The shutter 13 can be turned around the rotation shaft 42c toward the cathode member 2 by rotating the rotation shaft 42c by the motor drive. This allows the cathode member 2 to approach the cathode member 2 at the start of the arc discharge, and separates from the cathode member 2 toward the substrate W during the arc discharge so that the plate is positioned at a predetermined position between the cathode member 2 and the substrate W. It can be stopped so that the surface of the shape faces the cathode member 2.

  By rotating the shutter 13 about the rotation shaft 42c as in the present embodiment, no displacement occurs between the axis of the cathode member 2 and the trigger 14 provided on the shutter 13. In addition, since the angle of rotation of the rotating shaft can be controlled with high accuracy, it can be stopped at a predetermined position with high accuracy. Further, it can be stopped so as to face the cathode member without fail.

  Note that the shutter 13 can be moved by a piston method instead of the above-described swiveling method. That is, the shutter 13 is set upright with respect to the support shaft 42b, and the shutter 13 is moved between the cathode member 2 and the base material W by moving the support shaft 42b in the axial direction, so that the shutter 13 approaches and separates from the cathode member 2.

(3) Dynamic Magnetic Field Generating Unit The dynamic magnetic field generating unit is configured to move the magnet 5 to form a dynamic magnetic field around the cathode member 2 and to form a dynamic magnetic field around the cathode member 2.

  Specifically, conventionally, when the ring-shaped magnet 5 is arranged on the back side of the pedestal 6, a static magnetic field is formed around the cathode member 2, and a beam-shaped plasma having strong directivity is generated from the cathode member 2. However, in the second embodiment, not only the magnet 5 is simply arranged on the back side of the pedestal portion 6, but also the magnet 5 is By rotating, a dynamic magnetic field is formed around the cathode member 2.

  Thereby, the direction of the beam-shaped plasma 9 changes in accordance with the change in the direction of the changing magnetic field, so that the plasma reaches the substrate by bypassing the shutter 13 disposed between the cathode member 2 and the substrate W. And efficient film formation can be performed.

  FIG. 6 is a diagram illustrating the structure around the cathode member. As shown in FIG. 6, the dynamic magnetic field forming means 41 is configured by attaching a belt 4a to a support plate 4 supporting a magnet 5. The belt 4a is stretched over a pulley 41b, and a motor 41a is attached to the pulley 41b. When the motor 41a is operated to rotate the pulley 41b, the support plate 4 is rotated via the belt 4a, and the magnet 5 supported by the support plate 4 is rotated around the cathode member 2. Have been.

  By rotating the magnet 5 by the dynamic magnetic field forming means 41 having such a structure, it is possible to form a dynamic magnetic field around the cathode member 2 during film formation. Therefore, as shown in FIG. The surface of the substrate W can be irradiated while rotating 9.

  In the present embodiment, a mechanism for rotating the magnet 5 is adopted as the dynamic magnetic field forming means, but it is not always necessary to rotate the magnet 5 to form a dynamic magnetic field around the cathode member. . For example, even when the magnet is moved linearly in a vertical direction or the like, a dynamic magnetic field can be formed around the cathode member.

3. Effect of the present embodiment As described above, the vacuum arc vapor deposition apparatus according to the present embodiment can be used not only at the start of arc discharge but also at the time of emission of macroparticles such as broken pieces. Since the shutter 13 is arranged between them, a higher quality thin film can be formed more efficiently and stably.

4. More Preferred Mode in Second Embodiment According to the second embodiment described above, it is possible to prevent macro particles such as broken pieces emitted from the cathode member 2 from scattering and reaching the base material. If the shutter is always located at the second position, a decrease in the film forming speed is inevitable. Therefore, in the present embodiment, as shown in FIG. 4, it is preferable to move the shutter 13 to a position (second position B) where the macro particles are shielded in accordance with the emission period of the macro particles such as broken pieces. . This allows the shutter to shield the macroparticles when macroparticles such as broken pieces are emitted, while the plasma can be transported to the substrate as it is when no macroparticles are emitted, thus causing defects due to macroparticles. , And a more efficient film formation can be performed by minimizing a decrease in the film formation efficiency.

  Specifically, when the arc discharge is started, the shutter 13 is separated from the first position A in the direction of the base material in order to release the contact between the cathode member 2 and the trigger 14, and then immediately returns to the original standby position. (3rd position C). During the film formation, the shutter 13 is basically held at the third position C. However, as described above, during the film formation, macroparticles such as broken pieces are periodically released from the cathode member 2 and a nebula-like defect may be formed on the base material. The shutter 13 is moved from the third position C to the second position B to block macro particles such as broken pieces. As a result, a high-quality deposited film can be formed with high efficiency.

[3] Other Preferred Embodiments In the first and second embodiments described above, the following embodiments are preferably added.

1. Cathode sending mechanism and magnetic field generating means In a vacuum arc vapor deposition apparatus using a columnar cathode member, the arc spot disappears during film formation, making it impossible to continue film formation, resulting in a reduction in work efficiency. There is a risk of going. In addition, the arc spot formed on the cathode member during the film formation moves on the pedestal portion like a spark and generates a spark (spark), which may cause macro particles to scatter and deteriorate the film quality. There is. Therefore, in order to prevent the disappearance of such an arc spot and the occurrence of spark, it is preferable to provide a cathode sending mechanism and a magnetic field generating means.

(1) Cathode sending mechanism FIG. 7 is a view for explaining the structure around the cathode member of the vacuum arc evaporation apparatus. The cathode member 2 is slidably held on the side wall of the vacuum chamber 1. Specifically, a pedestal portion 6 having an insertion hole is attached to a side wall of the vacuum chamber 1, and a cylindrical cathode holding member 7 is provided behind the pedestal portion 6. Then, the columnar cathode member 2 is inserted through the pedestal portion 6 and the cathode holding member 7 and slidably held. A cathode sending mechanism (hereinafter, also simply referred to as “sending mechanism”) 12 is provided behind the cathode holding member 7. For example, a motor-driven mechanism is used as the delivery mechanism 12, and the delivery motor 12a is driven, and the rotation of the delivery motor 12a is changed to the axial movement of the rod 12b by using a known mechanism. At 12b, the cathode member 2 is configured to be sent out toward the front where the base material W is arranged.

  Then, by using the delivery mechanism 12 and appropriately maintaining the length of the cathode member 2 protruding from the pedestal 6, it is possible to prevent the arc spot from disappearing.

(2) Magnetic Field Generating Means A magnet 5 as a magnetic field generating means and a support plate 4 for supporting the magnets 5 are provided on the back side of the pedestal portion 6. The magnet 5 controls the behavior of the arc spot generated on the cathode member 2 during arc discharge by generating a magnetic field around the cathode member 2. That is, by applying a magnetic force to the tip portion of the cathode member 2, the arc spot acts to stay at a position where the arc discharge is maintained. As a result, the extinction of arc spots and the occurrence of sparks during film formation can be reduced.

2. Adjusting Mechanism It is preferable to provide an adjusting mechanism that controls the feeding of the cathode member 2 by the sending mechanism 12 to adjust the distance d1 (see FIG. 1) from the magnet 5 to the tip of the cathode member 2.

  That is, as a result of investigating the disappearance of the arc spot, the protrusion amount d2 of the cathode member 2 from the surface of the pedestal portion 6 shown in FIG. 1 is related to the disappearance of the arc spot, and the protrusion amount d2 of the cathode member 2 is When the distance becomes smaller, the distance d1 from the ring-shaped magnet 5 disposed on the back side of the pedestal portion 6 to the tip of the cathode member 2 becomes too short, and even if a magnetic force is applied to the cathode member 2, the arc spot disappears. It was found that it was easy to occur.

  As a result of the experiment, when the distance d1 from the magnet 5 to the tip of the cathode member 2 is 54 mm or more, an appropriate magnetic force is applied to the arc spot of the cathode member 2 to maintain the arc discharge and eliminate the arc spot. Can be prevented.

  In addition, when the columnar cathode member 2 was used, the problem that the arc spot moved to the pedestal portion occurred as described above. It has been found that the distance d1 from the magnet 5 to the tip of the cathode member 2 is also involved in the problem of the movement to.

  That is, contrary to the disappearance of the arc spot described above, if the distance d1 from the magnet 5 to the tip of the cathode member 2 is too long, the magnetic force will not reach the arc spot formed near the tip of the cathode member 2, and the arc Since the behavior of the spot cannot be controlled, the arc spot moves to the pedestal portion 6 like a spark.

  Then, as a result of the experiment, by setting the distance d1 from the magnet 5 to the tip of the cathode member 2 to 87 mm or less, a magnetic force can be appropriately applied to the tip of the cathode member 2 to move the arc spot to the base 6. I found that it could be prevented.

  The adjusting mechanism controls the sending mechanism 12 to adjust the distance d1 from the magnet 5 to the tip of the cathode member 2. An adjusting mechanism configured to detect a position of the tip of the cathode member 2; a distance measuring unit that measures a distance d1 from the magnet 5 to the tip of the cathode member 2 based on the detected position of the tip of the cathode member 2; Control means for controlling the sending mechanism 12 based on the measurement result of the distance d1 by the distance measuring means.

  As the detecting means, for example, a laser sensor having a transmitting section and a light receiving section provided at both ends of the distal end position is used. This laser sensor has a short tip, and the laser receiving unit detects the position of the tip of the cathode member 2 by receiving a laser beam.

  The distance measuring means is connected to the detecting means, and the position of the magnet 5 provided on the back side of the pedestal part 6 is recorded in advance. Then, the distance d1 from the magnet 5 to the tip of the cathode member 2 is obtained by calculating the difference between the position of the tip of the cathode member 2 detected by the above-described detection means and the position of the magnet 5 recorded in advance. .

  In the control means, a lower threshold T1 and an upper threshold T2 for the distance d1 from the magnet 5 to the tip of the cathode member 2 are set in advance (see FIG. 8). The control means controls the sending mechanism 12 so that the tip of the cathode member 2 is always positioned within the range of the thresholds T1 and T2, so that the tip of the cathode member 2 at which arc discharge is performed can reduce the magnetic force from the magnet 5. The arc discharge is maintained in a region where the arc discharge is maintained ("stable discharge region" in FIG. 8).

  Specifically, the lower limit threshold T1 shown in FIG. 8 is a value at the boundary of whether or not the extinction of the arc spot occurs. On the other hand, the upper limit threshold T2 is such that the tip of the cathode member 2 is separated from the magnet 5. It is a boundary value whether or not it becomes difficult to control the arc spot by the magnetic force, and T1 and T2 are set to 54 mm and 87 mm, respectively. By maintaining the distance d1 at a value between such threshold values T1 and T2, it is possible to stably continue the arc discharge and perform a long-term film formation.

3. Adjustment of the delivery amount The vacuum arc evaporation apparatus measures the discharge voltage at the cathode member during arc discharge, detects the position of the arc spot based on the measurement result of the discharge voltage, and the position of the arc spot is not at the cathode member. In this case, it is preferable that the arc discharge is temporarily stopped and then the arc discharge is started.

  As described above, when the columnar cathode member 2 is used in the conventional vacuum arc evaporation apparatus as shown in FIG. 17, the macro spot is generated by the arc spot moving to the pedestal part 6 like a spark. The quality of the thin film may be reduced.

  On the other hand, by adjusting the tip of the cathode member 2 to be always located in the “stable discharge region” in FIG. 8 by the adjusting mechanism, it is possible to prevent the arc spot from moving to the pedestal portion 6. However, there is still a possibility that the arc spot may move to the pedestal 6 due to an unexpected situation.

  Therefore, it is detected that the arc spot has moved to the pedestal portion, the arc discharge is stopped based on the detection result, and then the arc spot is adjusted to be at the tip of the cathode member 2, and then the discharge is restarted. It is preferable to configure as follows. This prevents the arc discharge from being continuously performed in a state where the arc spot has moved to the pedestal portion, so that it is possible to prevent the macro particles from adhering to the base material.

  Specifically, for example, the discharge voltage of the arc discharge is used as an index for accurately detecting that the arc spot has moved to the pedestal portion. Usually, there is a difference in resistance to arc discharge between the cathode member and the pedestal portion due to a difference in material and shape, so that the arc spot exists in the cathode member and the arc spot moves to the pedestal portion. The discharge voltage fluctuates. When the discharge voltage during this arc discharge is measured, a waveform as shown in FIG. 9 is obtained. In FIG. 9, the vertical axis is the measured voltage, and the horizontal axis is the time.

  From FIG. 9, the absolute value of the discharge voltage increases (25 to 50 V) while the arc spot exists on the columnar cathode member, and after the arc spot moves to the disk-shaped pedestal (see FIG. 9). It can be seen that the absolute value of the discharge voltage decreases after 30 seconds (10 to 40 V). FIG. 9 shows a result in the case where glassy carbon is used for the cathode member and a metal material is used for the pedestal portion. For example, both the protrusion and the pedestal portion are formed of the same material (glassy carbon). Even in this case, the absolute value of the discharge voltage changes because the shapes of the cathode member and the pedestal portion are different. As described above, the cathode member and the pedestal portion have different resistance values due to differences in material, shape, and the like, and the discharge voltage of the arc discharge changes based on the difference in the resistance values.

  Then, a threshold value for the discharge voltage is set in advance, the discharge voltage during the arc discharge is measured and constantly compared with the threshold value. When the absolute value of the discharge voltage lower than the threshold value is measured, the arc spot is measured. Is determined to have moved to the pedestal, and the arc discharge is temporarily stopped. Thereby, the arc discharge is not continuously performed in a state where the arc spot is located on the pedestal portion, and it is possible to prevent the macro particles from adhering to the base material.

  It should be noted that the discharge voltage waveform has a fluctuation width, and when the fluctuation width is large, it may be difficult to compare with the threshold value. In such a case, for example, if the waveform processing is performed to sequentially obtain the average value of the data of 50 points adjacent to each other, as shown in FIG. 10, the swing width is much smaller than the actually measured waveform of FIG. A distorted waveform can be obtained. Based on this waveform, it is possible to appropriately detect a change in the discharge voltage due to the movement of the arc spot.

4. Other Embodiments of Trigger and Shutter In the above-described first embodiment, the trigger and the shutter 13 are integrated, and the shutter also serves as the trigger. However, the present invention is not limited to this. It is also possible to block macro particles. For example, as shown in FIG. 11, the trigger 14 is attached to the tip of an arm 14 a rotatably attached to the support member 43, and when the trigger 14 contacts the cathode member 2, the distance between the cathode member 2 and the base material W is increased. May be provided with a plate-like shutter 13a that can be moved up and down.

  When the shutter and the trigger are separated as described above, it is preferable to provide a mechanism for synchronizing the operations of the shutter and the trigger. Specifically, when starting the operation of bringing the trigger 14 into contact with the cathode member 2, a shutter moving mechanism (not shown) that lowers the plate-shaped shutter 13 a and arranges the shutter 13 a between the cathode member 2 and the substrate W. Is preferably provided.

  When the trigger 14 is attached to the tip of the arm 14a as in this embodiment, it is preferable to use a thin foil-shaped member as the trigger 14. Accordingly, it is possible to prevent the cathode member 2 from being damaged by an impact when the trigger 14 comes into contact with the cathode member 2.

  Hereinafter, the present invention will be specifically described based on examples.

1. Experiment 1
(1) Experimental conditions In this experiment, the necessity of providing a shutter was examined using a vacuum arc evaporation apparatus as shown in FIG. The experimental conditions were set as follows.

Magnet: Neodymium magnet Magnetic force: 71 Gauss in axial direction of cathode member, 26 Gauss in radial direction
Cathode member: Columnar glassy carbon with a diameter of 3 mm Arc current: 80A

  Specifically, as shown in FIG. 12, both the two substrates W1 and W2 are formed by using the substrate supporting member 11a that revolves the two substrates W1 and W2 (Si substrate) during the arc discharge. A DLC film was formed. In this experiment, film formation for 6 minutes was performed three times without exchanging the base materials W1 and W2, and when the trigger 35 was brought into contact with the cathode member 2 to start discharge, the base material W1 The adjustment was made so as to face the member 2.

  Then, after the film formation is completed three times, a diamond indenter with a load of 1.5 mg is swept over the surface of the thin film by 5 mm in 30 seconds using a stylus type step meter (Dektak 150, manufactured by ULVAC, Inc.). Thereby, the heights of the protrusions formed on the thin films on the surfaces of the substrates W1 and W2 were measured.

(2) Experimental results The results are shown in FIG. Note that the horizontal axis in FIG. 13 indicates the range of the height of the projections formed on the thin film, and the vertical axis indicates the number of projections included in each height range. FIG. 13 shows the average value of the measurement results for two batches.

  As shown in FIG. 13, when the discharge was started by the trigger 35, more protrusions were formed on the substrate W1 facing the cathode member 2 than on the substrate W2. Therefore, when the trigger is brought into contact with the cathode member to start the discharge, macroparticles are emitted from the cathode member, and the macroparticles adhere to the base material, so that the surface of the base material may be roughened. Do you get it. From these results, it was found that in order to form a high-quality thin film, it is necessary to arrange a shutter between the cathode member and the base material when starting discharge.

2. Experiment 2
(1) Experimental conditions In this experiment, a film was formed on a substrate by using a vacuum arc deposition apparatus in which a static magnetic field was formed around a cathode member and a vacuum arc deposition apparatus in which a dynamic magnetic field was formed. The distribution of film thickness of the formed thin film was compared. In this experiment, as in Experiment 1, film formation was performed while revolving the two substrates W1 and W2.

  Specifically, for each vacuum arc vapor deposition apparatus, a film was formed for 120 seconds at an arc current of 80 A, and the film thickness distribution of the thin film after film formation was examined. In a vacuum arc evaporation apparatus in which a dynamic magnetic field was formed, film formation was performed while rotating the magnet 5 at a rotation speed of 60 rpm. As the magnet 5, a magnet that generates a magnetic field of 71 Gauss in the axial direction of the cathode member and 26 Gauss in the radial direction was used.

(2) Experimental Results FIG. 14 shows the results of the vacuum arc evaporation apparatus in which a static magnetic field was formed, and FIG. 15 shows the results of the vacuum arc evaporation apparatus in which a dynamic magnetic field was formed. In FIGS. 14 and 15, the vertical axis represents the vertical distance from the center of the cathode member, and the horizontal axis represents the normalized film thickness.

  In this experiment, based on FIGS. 14 and 15, the film thickness distributions of the thin films formed on the respective substrates were compared with each other using a full width at half maximum (FWHM). The FWHM here is a value obtained by doubling the half width on one side.

  14, when the film was formed under a static magnetic field, the FWHM of the substrate W1 was 128 mm and the FWHM of the substrate W2 was 94 mm. 15, when the film was formed under a dynamic magnetic field, the FWHM of the substrate W1 was 176 mm, and the FWHM of the substrate W2 was 173 mm.

  From this, the thin film formed under the static magnetic field as shown in FIG. 14 cannot be said to have a sufficiently large half-width, and the half-width was significantly different between the base material W1 and the base material W2. . That is, a film having a uniform thickness distribution could not be formed.

  On the other hand, the thin film formed under a dynamic magnetic field as shown in FIG. 15 has a large half-value width and improved uniformity of the film thickness, and also has a small thickness between the base material W1 and the base material W2. The half width was hardly changed. Also, the thickness distribution of the thin film was different between the case of the static magnetic field and the case of the dynamic magnetic field.

  From this, it was confirmed that when film formation was performed while forming a dynamic magnetic field around the cathode member, a high-quality thin film having a uniform film thickness distribution could be stably formed.

3. Experiment 3
(1) Experimental Conditions In this experiment, a film was formed on a substrate W (silicon substrate) by using the vacuum arc evaporation apparatus shown in FIG. 1 and changing the distance d1 from the magnet 5 to the tip of the cathode member 2. Then, the lower limit threshold T1 and the upper limit threshold T2 with respect to the stable discharge region (see FIG. 8) with respect to the tip of the cathode member 2, that is, the distance d1 from the magnet 5 to the tip of the cathode member 2, were examined. The experimental conditions were set as follows.

Magnet: Neodymium magnet Magnetic force: 71 Gauss in axial direction of cathode member, 26 Gauss in radial direction
Cathode member: Columnar glassy carbon with a diameter of 3 mm Arc current: 80 A

  Using the delivery mechanism 12, the distance d1 from the magnet 5 to the tip of the cathode member 2 was changed, and the state of arc discharge was observed when the distance d1 was 40, 54, 70, 87, and 100 mm. Table 1 shows the results.

(2) Experimental Results From Table 1, in this experiment, it was difficult to perform arc discharge completely normally when the distance d1 was less than 54 mm or more than 87 mm. It can be seen that, when the distance d1 to the tip of is less than 87 mm, the arc spot is appropriately prevented from moving to the pedestal 6, and when the distance d1 is greater than 54 mm, the arc spot is prevented from disappearing.

  In this experiment, a permanent magnet made of neodymium was used in order to cause the disappearance and movement of the arc spot. The inventor has confirmed that when the magnetic force is changed, normal arc discharge is performed even when the distance d1 is less than 54 mm or more than 87 mm.

  For this reason, when the columnar cathode member is used, the cathode member is positioned such that the tip of the cathode member is positioned in a region where the magnetic force from the magnetic field generating means is applied to the tip of the cathode member and the arc discharge is maintained. It was found that by adjusting the feeding of No. 2, it was possible to stably continue the arc discharge and perform a long-term film formation.

  As described above, the present invention has been described based on the embodiments, but the present invention is not limited to the above embodiments. Various changes can be made to the above embodiment within the same and equivalent scope as the present invention.

The present invention includes the following additional features.
(Appendix 1)
The arc discharge is started by bringing the trigger into contact with the cathode member, plasma is generated by evaporating the cathode member with an arc spot formed on the cathode member along with the arc discharge, and the plasma is generated. A vacuum arc vapor deposition apparatus for forming a thin film by depositing the material of the cathode member on the surface of the disposed base material,
A column-shaped cathode member protruding toward the base material,
A pedestal portion having an insertion hole through which the columnar cathode member is inserted,
A sending mechanism that sends out the cathode member inserted into the pedestal portion toward the front substrate,
Magnetic field generating means arranged on the back side of the pedestal portion, for generating a magnetic field around the cathode member and controlling the behavior of the arc spot,
The feeding mechanism is controlled so that the tip of the cathode member is positioned in a region where the magnetic force from the magnetic field generating means is applied to the tip of the cathode member and the arc discharge is maintained. An adjustment mechanism for adjusting the distance to the tip of the member,
A vacuum arc vapor deposition apparatus, comprising: a shutter disposed between the cathode member and the substrate when the trigger is brought into contact with the cathode member.

(Appendix 2)
The vacuum arc vapor deposition apparatus according to claim 1, wherein the adjusting mechanism adjusts a distance from the magnetic field generating means to a tip of the cathode member within a range of 54 to 87 mm.

(Appendix 3)
A vacuum arc deposition method for depositing a cathode material on a substrate surface using a vacuum arc deposition apparatus to form a film,
When the trigger is brought into contact with the cathode member, after the shutter is disposed between the cathode member and the base material to block macro particles scattered from the cathode member, the shutter is moved between the cathode member and the base material. Evacuate from between,
While adjusting the distance from the magnetic field generating means to the tip of the cathode member so that the tip of the cathode member receives a magnetic force from the magnetic field generating means and maintains the arc discharge, A vacuum arc evaporation method comprising forming a film on a material surface.

1, 31 Vacuum chamber 1a Exhaust port 2, 32 Cathode member 4 Support plate 4a Belt 5, 39 Magnet 6, 36 Pedestal portion 7 Cathode holding member 9 Plasma 11, 11a, 33 Base material supporting member 12 Delivery mechanism 12a Delivery motor 12b Rod 13, 13a Shutter 14, 35 Trigger 14a Arm 15, 16, 34, 37 Power supply 17 Resistance 41 Dynamic magnetic field forming means 41a Motor 41b Pulley 42 Shutter support mechanism 42a Motor 42b Support shaft 42c Rotation shaft 43 Support member a1 Tip of cathode member Distance between shutter and substrate a2 distance between shutter and substrate d1 distance d2 from magnet to tip of cathode member projection amount l, w length of shutter side T1 lower threshold T2 upper threshold W, W1, W2 substrate

Claims (7)

The arc discharge is started by bringing the trigger into contact with the cathode member, plasma is generated by evaporating the cathode member with an arc spot formed on the cathode member along with the arc discharge, and the plasma is generated. A vacuum arc vapor deposition apparatus for forming a thin film by depositing the material of the cathode member on the surface of the disposed base material,
A column-shaped cathode member protruding toward the base material,
A plate-shaped shutter also serving as the trigger,
When the plate-shaped shutter rotates and approaches the tip of the cathode member, the trigger contacts the tip of the cathode member, and the plate-shaped shutter moves between the cathode member and the base material. A vacuum arc vapor deposition apparatus characterized by being arranged.   A shutter rotation mechanism for rotating the plate-shaped shutter is provided so that the plate-shaped shutter is disposed between the cathode member and the base material when the trigger is brought into contact with the cathode member. The vacuum arc evaporation apparatus according to claim 1, wherein: The arc discharge is started by bringing the trigger into contact with the cathode member, plasma is generated by evaporating the cathode member with an arc spot formed on the cathode member along with the arc discharge, and the plasma is generated. A vacuum arc vapor deposition apparatus for forming a thin film by depositing the material of the cathode member on the surface of the disposed base material,
A column-shaped cathode member protruding toward the base material,
A plate-shaped shutter also serving as the trigger,
A shutter support mechanism that supports the shutter between the cathode member and the approachable / separable toward the cathode member,
A moving magnetic field forming means for moving a magnet arranged on the back side of the cathode member to form a moving magnetic field around the cathode member,
The shutter contacts the cathode member at a first position between the cathode member and the substrate at the start of arc discharge, and then is more grounded than the first position between the cathode member and the substrate during arc discharge. Placed at the second position on the material side,
The vacuum magnetic vapor deposition apparatus according to claim 1, wherein the dynamic magnetic field forming means forms a dynamic magnetic field so that the plasma can be guided to the surface of the substrate by bypassing the shutter disposed at the second position.   4. The vacuum arc vapor deposition apparatus according to claim 1, wherein the shutter is formed of any one of molybdenum, carbon, and tungsten. 5.   The vacuum arc evaporation apparatus according to any one of claims 1 to 4, wherein the cathode member is made of glassy carbon or laminated carbon. A method for forming a hard carbon film using the vacuum arc evaporation apparatus according to claim 3,
At the start of arc discharge, the shutter is arranged at the first position on the cathode member, and the trigger of the shutter is brought into contact with the cathode member,
During the arc discharge, the shutter is arranged at the second position,
During the arc discharge, the dynamic magnetic field formed by the dynamic magnetic field forming means causes the plasma generated by the arc discharge to reach the substrate while bypassing a shutter arranged at the second position. A method for forming a hard carbon film, comprising forming a film on a substrate. A method for forming a hard carbon film using the vacuum arc evaporation apparatus according to claim 3,
At the start of arc discharge, the shutter is arranged at the first position,
During the arc discharge, the shutter is arranged at a third position where the space between the cathode member and the base material is not shielded, and the shutter is arranged at the second position in accordance with the emission period of macro particles from the cathode member. A method for forming a hard carbon film, comprising:

Images