JP2019212846A - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

To provide a semiconductor device capable of preventing cracking of a semiconductor chip and a manufacturing method thereof.SOLUTION: A semiconductor device 1 includes a die pad 20 and a semiconductor chip 4. The die pad 20 has a first surface 20A having a die bond region DL and a second surface 20B opposed to the first surface 20A in the thickness direction. The semiconductor chip 4 is provided on the die bond region DL of the die pad 20 with a die bond material 3 interposed therebetween. Then, a penetrating portion 25 is provided in the die bond region DL of the die pad 20. The penetrating portion 25 is configured to penetrate from the first surface 20A of the die pad 20 to the second surface 20B, and to extend a part 30 of the die bonding material 3 from the first surface 20A side to the second surface 20B side.SELECTED DRAWING: Figure 2

Description

  The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly, to a semiconductor device in which a semiconductor chip is mounted on a die pad via a die bonding material and a technique effective when applied to the manufacturing method thereof.

  Patent Document 1 discloses a semiconductor device. This semiconductor device has a structure in which a semiconductor chip is mounted on a die pad (tab) via an adhesive, and the die pad and the semiconductor chip are sealed by a resin sealing portion.

By the way, a semiconductor chip for large current, for example, a semiconductor chip including a bipolar transistor having a vertical structure, is designed to increase the chip size and decrease the current density. Furthermore, the back surface of the semiconductor chip on the die pad side is used as a collector electrode of a bipolar transistor, and the semiconductor chip is designed to have a reduced thickness and a reduced collector resistance.
On the other hand, in the semiconductor device manufacturing process, for example, silver (Ag) paste is used as an adhesive. After the silver paste is applied onto the die pad, the semiconductor chip is pressed onto the die pad via the silver paste, and die bonding is performed. Has been done.
However, in die bonding of the manufacturing process, since the chip size of the high-current semiconductor chip is large and the thickness is thin, there is room for improvement in order to prevent cracking of the high-current semiconductor chip.

JP-A-7-273271

  In consideration of the above facts, the present invention provides a semiconductor device and a method for manufacturing the same that can prevent cracking of a semiconductor chip.

  A semiconductor device according to a first embodiment of the present invention includes a die pad having a first surface having a die bond region and a second surface opposed to the first surface in the plate thickness direction, and a die bond material on the die bond region. And a penetrating portion penetrating from the first surface to the second surface in the die bond region and a part of the die bond material extending from the first surface side to the second surface side.

  The semiconductor device according to the first embodiment includes a die pad and a semiconductor chip. The die pad has a first surface having a die bond region and a second surface facing the first surface in the thickness direction. The semiconductor chip is disposed on the die bond region via a die bond material.

Here, the semiconductor device includes a through portion in the die bond region of the die pad. The penetrating portion penetrates from the first surface of the die pad to the second surface, and a part of the die bonding material extends from the first surface side of the die pad to the second surface side.
Even if the semiconductor chip is pressed to the die bond region of the die pad via the die bond material in the die bonding, a part of the die bond material reaches the second surface side through the through portion. For this reason, since the stress due to the pressure applied to the semiconductor chip is smaller than when no through portion is provided, it is possible to prevent the semiconductor chip from cracking.

  In the semiconductor device according to the second embodiment of the present invention, in the semiconductor device according to the first embodiment, a part of the die bond material is formed to spread around the penetrating portion on the second surface.

  In the semiconductor device according to the second embodiment, since a part of the die bond material is formed to spread around the penetrating portion on the second surface, a part of the spread die bond material becomes a locking portion, and the die pad The bonding force between the first surface and the die bond material can be improved.

  In the semiconductor device according to the third embodiment of the present invention, in the semiconductor device according to the first embodiment or the second embodiment, the penetrating portion is formed in a circular shape when viewed from the first surface side.

  According to the semiconductor device of the third embodiment, since the penetrating portion is formed in a circular shape, the flow resistance when a part of the die bond material passes through the penetrating portion is smaller than that of, for example, a rectangular shape. For this reason, part of the die bond material is smoothly removed, so that the stress applied to the semiconductor chip is reduced, and the cracking of the semiconductor chip can be further prevented.

  In the semiconductor device according to the fourth embodiment of the present invention, in the semiconductor device according to the third embodiment, a plurality of penetrating portions are arranged at equal intervals.

  In the semiconductor device according to the fourth embodiment, since a plurality of through portions are arranged at equal intervals, a part of the die bond material is easily removed evenly through the through portion. For this reason, part of the die bond material is smoothly removed, so that the stress applied to the semiconductor chip is reduced, and the cracking of the semiconductor chip can be further prevented.

  A semiconductor device according to a fifth embodiment of the present invention is the semiconductor device according to any one of the first to fourth embodiments, wherein the semiconductor chip has a thickness equal to the plate thickness of the die pad or the die pad. The thickness is smaller than the plate thickness.

  In the semiconductor device according to the fifth embodiment, the semiconductor chip is formed to have the same thickness as that of the die pad or thinner than the die pad. For this reason, it is possible to prevent a semiconductor chip having a thickness equal to or smaller than the thickness of the die pad from being cracked.

  A method of manufacturing a semiconductor device according to a sixth embodiment of the present invention includes a first surface having a die bond region and a second surface facing the first surface in the thickness direction, and the first surface in the die bond region. A first step of forming a die bond material having fluidity on a die bond region of a die pad having a penetrating portion penetrating from the first surface to the second surface, and mounting a semiconductor chip while pressing the die bond region via the die bond material; And a second step of causing a part of the die bond material to pass through the penetrating portion from the first surface side to the second surface side by pressing.

  In the method of manufacturing a semiconductor device according to the sixth embodiment, first, as a first step, a die bond material having fluidity is formed on the die bond region of the die pad. The die pad has a first surface having a die bond region and a second surface facing the first surface in the thickness direction. And as a 2nd process, a semiconductor chip is mounted on a die-bonding region, pressing through a die-bonding material.

Here, the die bond region of the die pad has a through portion that penetrates from the first surface to the second surface. In the second step, when the semiconductor chip is mounted on the die bond region while being pressed through the die bond material, a part of the die bond material reaches from the first surface side to the second surface side through the through portion.
For this reason, since the stress due to the pressure applied to the semiconductor chip is smaller than the case where no through portion is provided, it is possible to prevent the semiconductor chip from being cracked during die bonding.

  In the method for manufacturing a semiconductor device according to the seventh embodiment of the present invention, in the method for manufacturing a semiconductor device according to the sixth embodiment, the die bond material on the die bond region in the second step is on the die bond region in the first step. The thickness is less than half that of the die bond material.

  In the method for manufacturing a semiconductor device according to the seventh embodiment, the die bond material on the die bond region in the second step is formed to be less than half the thickness of the die bond material on the die bond region in the first step. can do.

  ADVANTAGE OF THE INVENTION According to this invention, the semiconductor device which can prevent the crack of a semiconductor chip, and its manufacturing method can be provided.

1 is a schematic cross-sectional structure diagram of a semiconductor device according to a first embodiment of the present invention. FIG. 6 is an enlarged cross-sectional structure diagram (second process cross-sectional view illustrating a method for manufacturing a semiconductor device) in which a main part of the semiconductor device according to the first embodiment is enlarged. It is the enlarged plan view which expanded the die pad site | part of the semiconductor device which concerns on 1st Embodiment. FIG. 6 is a first process cross-sectional view corresponding to FIG. 2 for explaining the method of manufacturing the semiconductor device according to the first embodiment. FIG. 4 is an enlarged plan view corresponding to FIG. 3 in which a die pad portion of a semiconductor device according to a second embodiment of the present invention is enlarged. FIG. 10 is an enlarged plan view corresponding to FIG. 3 in which a die pad portion of a semiconductor device according to a third embodiment of the present invention is enlarged.

[First Embodiment]
The semiconductor device according to the first embodiment of the present invention will be described below with reference to FIGS.

(Overall configuration of semiconductor device 1)
As shown in FIG. 1, the semiconductor device 1 according to the present embodiment includes a lead 2, a die bond material 3, a semiconductor chip (semiconductor pellet) 4, a bonding wire 5, and a resin sealing body 6. ing. That is, the semiconductor device 1 is configured as a resin sealed (resin mold) type semiconductor device.

As shown in FIGS. 1 and 2, the lead 2 of the semiconductor device 1 includes a die pad (tab) 20, an inner lead 21, and an outer lead 22. As shown in FIG. 3, the die pad 20 is supported by a suspension lead 23 as a part of the inner lead 21. The inner leads 21 are arranged around the die pad 20 in the plate surface direction inside the resin sealing body 6.
On the other hand, the outer lead 22 is integrally formed on the side opposite to the die pad 20 side of the inner lead 21 and is extended to the outside of the resin sealing body 6. The outer lead 22 is formed into a surface mounting type or a pin insertion type according to the mounting method of the semiconductor device 1. Although not necessarily limited, the outer lead 22 is formed into a surface-mounted gull wing shape here.
The lead 2 is made of a copper (Cu), Cu alloy, or iron-nickel (Fe—Ni) alloy plate, and the lead 2 is formed by machining or etching the plate. Here, as shown in FIG. 2, the thickness t1 of the lead 2 is set to 0.2 mm to 0.4 mm, preferably 0.3 mm.

As the die bonding material 3, here, a conductive Ag paste is used. In this embodiment, the Ag paste is applied to the die bond region by a coating method. In the manufacturing process of the semiconductor device 1, the Ag paste has fluidity when applied, is pressed and thinly stretched during die bonding of the semiconductor chip 4, and is then cured.
Here, the thickness t2 after hardening of the die-bonding material 3 is set to 10 μm to 15 μm, for example. The thickness t <b> 2 is the thickness of the die bond material 3 between the semiconductor chip 4 and the die pad 20.

The semiconductor chip 4 is mainly composed of a semiconductor substrate 40, and the semiconductor chip 4 is mounted with a vertical bipolar transistor that can be used for a large current. Although a detailed cross-sectional structure is omitted, the bipolar transistor includes a first main electrode used as an emitter region, a second main electrode used as a collector region, and a control electrode used as a base region. Has been.
Here, a silicon single crystal substrate is used as the semiconductor substrate 40.

Although schematically shown in FIGS. 1 and 2, an external terminal 41 electrically connected to the first main electrode of the bipolar transistor and a control electrode are provided on the surface (main surface) side of the semiconductor substrate 40. An electrically connected external terminal 42 is provided. The external terminal 41 and the external terminal 42 are formed of, for example, an aluminum alloy film. Actually, a part of the surface of each of the external terminal 41 and the external terminal 42 is exposed from a bonding opening formed in the final protective film.
On the other hand, a back electrode 43 is disposed on the back surface facing the surface of the semiconductor substrate 40 in the thickness direction, and this back electrode is electrically connected to the second main electrode of the bipolar transistor. That is, the second main electrode of the bipolar transistor is electrically connected to the die pad 20 with the die bonding material 3 interposed therebetween, and the collector current of the bipolar transistor flows between the back electrode 43 and the die pad 20.
Here, as an example, the semiconductor chip 4 is formed in a chip size having one side of 3 mm to 5 mm, and is formed in a square rectangular shape when viewed from the front side. Further, the thickness t3 of the semiconductor chip 4 is set to be equal to the thickness t1 of the die pad 20 or thinner than the thickness t1, for example, 0.1 mm to 0.3 mm.

  As shown in FIG. 1, one end of one bonding wire 5 is electrically connected to an external terminal 41 of the semiconductor chip 4, and the other end of the bonding wire 5 is electrically connected to one inner lead 21. Has been. One end of the other bonding wire 5 is electrically connected to the external terminal 42 of the semiconductor chip 4, and the other end of the bonding wire 5 is electrically connected to the other inner lead 21. Yes. For example, a gold (Au) wire is used as the bonding wire 5.

  The resin sealing body 6 is configured to hermetically seal the die pad 20, the semiconductor chip 4 die-bonded on the die pad 20, the inner lead 21, and the bonding wire 5. For example, an epoxy resin material is used for the resin sealing body 6, and the resin sealing body 6 is resin-molded by, for example, a resin molding method.

(Configuration of penetration part)
As shown in FIGS. 1 and 2, the semiconductor device 1 according to the present embodiment includes a penetrating portion 25 in the die pad 20 in the die bond region DL of the die pad 20.
More specifically, the penetrating portion 25 penetrates from the first surface 20A on the die bonding side of the semiconductor chip 4 of the die pad 20 to the second surface 20B opposed to the first surface 20A in the plate thickness direction of the die pad 20. It is configured as a hole. As shown in FIG. 3, the penetrating portion 25 is formed in a circular shape when viewed from the first surface 20A side. As shown in FIG. 2, the penetrating portion 25 is formed in a straight cross-sectional shape that maintains the opening diameter of the first surface 20A as it is up to the second surface 20B. Here, a plurality of through portions 25 are arranged, and a plurality of through portions 25 are arranged at equal intervals along the sides of the die pad 20. As shown in FIG. 2, the diameter L of the penetrating portion 25 is set to the same dimension as the thickness t1 or slightly larger than the thickness t1 because machining becomes difficult when the dimension is smaller than the thickness t1 of the die pad 20. ing.

  As shown in FIG. 2, when the semiconductor chip 4 is die-bonded to the die pad 20, the penetrating portion 25 allows a part 30 of the die bond material 3 to pass from the first surface 20 A side to the second surface 20 B side of the die pad 20. It is set as the structure which pulls (part 30 is pulled out). That is, the semiconductor chip 4 extrudes a part 30 of the die bond material 3 through the penetrating portion 25 by the pressing force when the semiconductor chip 4 is die-bonded with the die bond material 3 interposed in the die bond region DL of the die pad 20. Yes. A part 30 of the die bond material 3 is extruded to the second surface 20B side of the die pad 20 and is formed so as to extend around the through portion 25 along the second surface 20B.

(Manufacturing method of the semiconductor device 1)
Here, a method for manufacturing the semiconductor device 1 and a method for manufacturing the semiconductor device 1 mainly including a die bonding step will be briefly described.

  First, the lead 2 shown in FIG. 1 is formed (see FIGS. 1 to 4). The lead 2 is in a state of a lead frame (not shown) until a process before the resin sealing body 6 is molded, and a die pad 20, an inner lead 21 and an outer lead 22 before molding are connected to the lead frame. . In the die bond region DL of the die pad 20, the through portion 25 is formed in the same process as the process of forming the lead frame, or before or after the process of forming the lead frame.

  As shown in FIG. 4, a die bond material 31 is applied to the die bond region DL on the first surface 20 </ b> A of the die pad 20. As described above, an Ag paste is used for the die bonding material 31, and the Ag paste is applied using a coating method. Here, the thickness t4 of the applied die bond material 31 is set to 20 μm to 30 μm, for example.

Next, in the die bond region DL, the semiconductor chip 4 is disposed on the first surface 20A of the die pad 20 via the die bond material 31, and die bonding is performed (see FIG. 2). Die bonding is performed by pressing the semiconductor chip 4 against the die bond material 31, and a part 30 of the die bond material 31 reaches the second surface 20B side of the die pad 20 through the through portion 25 (see FIG. 2). Here, a part 30 of the die bond material 31 is formed so as to spread around the through portion 25 along the second surface 20 </ b> B of the die pad 20.
When the die bond material 31 is cured, as shown in FIGS. 1 and 2, the semiconductor chip 4 is mechanically bonded to the die bond region DL of the die pad 20, and the die pad 20 and the back electrode 43 of the semiconductor chip 4 are bonded to each other. An electrically connected die bond material 3 is formed.

  Thereafter, bonding wires 5 for electrically connecting the external terminals 41 and the inner leads 21 of the semiconductor chip 4 and the external terminals 42 and the inner leads 21 are formed. Then, the die pad 20, the inner lead 21, the semiconductor chip 4 and the bonding wire 5 are sealed with the resin sealing body 6 (see FIG. 1). The resin sealing body 6 is formed using the resin sealing method as described above.

  Subsequently, the outer lead 22 and the like of the lead 2 are separated from a lead frame (not shown), and the outer lead 22 is formed into a predetermined mounting shape as shown in FIG. When these series of manufacturing steps are completed, the semiconductor device 1 according to the present embodiment shown in FIGS. 1 and 2 is completed.

(Operation and effect of the present embodiment)
The semiconductor device 1 according to the present embodiment includes a die pad 20 and a semiconductor chip 4 as shown in FIGS. 1 and 2. The die pad 20 has a first surface 20A having a die bond region DL and a second surface 20B facing the first surface 20A in the thickness direction. The semiconductor chip 4 is disposed on the die bond region DL of the die pad 20 via the die bond material 3.

Here, the semiconductor device 1 includes a through portion 25 in the die bond region DL of the die pad 20 as shown in FIG. 2 in particular. The penetrating portion 25 penetrates from the first surface 20A of the die pad 20 to the second surface 20B, and a part 30 of the die bond material 3 extends from the first surface 20A side of the die pad 20 to the second surface 20B side.
Even if the semiconductor chip 4 is pressed to the die bond region DL of the die pad 20 via the die bond material 3 (in the manufacturing process, the die bond material 31) in the die bonding, the part 30 of the die bond material 3 is not removed through the through-hole 25. It reaches the second surface 20B side. For this reason, since the stress due to the pressure applied to the semiconductor chip 4 is smaller than the case where the through portion 25 is not provided, the semiconductor chip 4 can be prevented from cracking.

  In particular, the semiconductor chip 4 for high current has a large chip size and is thin, so that it is easy to break, but the die-bonding material 3 is easily pulled out through the through portion 25 and is not easily cracked. In other words, since the crack of the semiconductor chip 4 can be prevented, the thickness of the semiconductor substrate 40 of the semiconductor chip 4 can be reduced, and the collector of the vertical structure bipolar transistor mounted on the semiconductor chip 4. The resistance component can be reduced.

Further, in the semiconductor device 1 according to the present embodiment, as shown in FIGS. 1 and 2, a part 30 of the die bond material 3 is formed to spread around the through portion 25 on the second surface 20 </ b> B of the die pad 20. The
For this reason, a part 30 of the spread die-bonding material 3 becomes a locking part, and the bonding force between the first surface 20A of the die pad 20 and the die-bonding material 3 can be improved.

  Furthermore, in the semiconductor device 1 according to the present embodiment, as shown in FIG. 3, since the through portion 25 is formed in a circular shape, the flow resistance when a part 30 of the die bond material 3 comes out through the through portion 25. However, it is smaller than, for example, a rectangular shape. For this reason, a part 30 of the die bond material 3 smoothly passes through the through portion 25, so that the stress applied to the semiconductor chip 4 is reduced and the cracking of the semiconductor chip 4 can be further prevented.

  Further, in the semiconductor device 1 according to the present embodiment, as shown in FIG. 3, since a plurality of through portions 25 are arranged at equal intervals, a part 30 of the die bond material 3 is evenly passed through the through portions 25. It becomes easy to come off. For this reason, part 30 of the die-bonding material 3 is smoothly removed, so that the stress applied to the semiconductor chip 4 is reduced and the cracking of the semiconductor chip 4 can be further prevented.

  Furthermore, in the semiconductor device 1 according to the present embodiment, as shown in FIG. 2, the semiconductor chip 4 has the same thickness as the die pad 20 (thickness t <b> 1) or is thinner than the die pad 20. It is formed at t3. For this reason, it is possible to prevent the semiconductor chip 4 having a thickness t3 equal to or thinner than the thickness of the die pad 20 from being cracked.

  In the manufacturing method of the semiconductor device 1 according to the present embodiment, first, as a first step, as shown in FIG. 4, a die bond material 31 having fluidity is formed on the die bond region DL of the die pad 20. . The die pad 20 has a first surface 20A having a die bond region DL and a second surface 20B facing the first surface 20A in the thickness direction. Then, as a second step, the semiconductor chip 4 is mounted on the die bond region DL while being pressed through the die bond material 31 (see FIGS. 1 and 2).

Here, as shown in FIGS. 2 and 3, the die bond region DL of the die pad 20 has a through portion 25 penetrating from the first surface 20A to the second surface 20B. In the second step, when the semiconductor chip 4 is mounted on the die bond region DL through the die bond material 31 while being pressed, a part 30 of the die bond material 31 passes through the through portion 25 from the first surface 20A side to the second surface 20B. To the side.
For this reason, since the stress due to the pressure applied to the semiconductor chip 4 is smaller than the case where the through portion 25 is not provided, it is possible to prevent cracking of the semiconductor chip 4 in die bonding. As a result of preventing the semiconductor chip 4 from cracking, the manufacturing yield of the semiconductor device 1 can be improved.

Furthermore, in the manufacturing method of the semiconductor device 1 according to the present embodiment, the die bond material 3 on the die bond region DL in the second step is compared with the thickness t4 of the die bond material 31 on the die bond region DL in the first step, It can be formed to a thin thickness t2 of less than half.
According to the semiconductor device 1 formed in this way, the resistance value between the semiconductor chip 4 and the die pad 20 can be reduced by reducing the thickness t2 of the die bond material 3. Specifically, the resistance value of the collector current path of the bipolar transistor having the vertical structure mounted on the semiconductor chip 4 can be reduced.

  Therefore, in the present embodiment, it is possible to provide the semiconductor device 1 that can prevent the semiconductor chip 4 from cracking and the method for manufacturing the same. In particular, since the chip size of the semiconductor chip 4 can be increased and the thickness t3 of the semiconductor substrate 40 of the semiconductor chip 4 can be reduced, the semiconductor device 1 suitable for a large current can be manufactured.

[Second Embodiment]
The semiconductor device 1 and the manufacturing method thereof according to the second embodiment of the present invention will be described with reference to FIG. In the present embodiment and the third embodiment to be described later, the same reference numerals are given to the same or substantially the same components as those of the semiconductor device 1 and the manufacturing method thereof according to the first embodiment. The description which overlaps is abbreviate | omitted.

  The semiconductor device 1 according to the present embodiment will explain an example in which the configuration of the penetrating portion 25 of the semiconductor device 1 according to the first embodiment is changed. As shown in FIG. 5, the semiconductor device 1 according to the present embodiment has one penetrating hole having a diameter L2 larger than the diameter L of the penetrating portion 25 in the first embodiment in the die bond region DL of the die pad 20. A portion 26 is provided. The through portion 26 is disposed in the center portion of the die bond region DL.

  Similar to the penetration part 25 of the semiconductor device 1 according to the first embodiment, the penetration part 26 brings a part 30 of the die bond material 3 from the first surface 20A side to the second surface 20B side so that the die bond material 3 The part 30 is formed so as to extend around the penetrating portion 26 along the second surface 20B.

  In the semiconductor device 1 according to the present embodiment, the constituent elements other than the penetrating portion 26 are the same as the constituent elements of the semiconductor device 1 according to the first embodiment. Further, since the manufacturing method of the semiconductor device 1 is the same as the manufacturing method of the semiconductor device 1 according to the first embodiment, description thereof is omitted here.

  In the semiconductor device 1 and the manufacturing method thereof according to the present embodiment configured as described above, the same operational effects as the operational effects obtained by the semiconductor device 1 and the manufacturing method thereof according to the first embodiment can be obtained. .

[Third Embodiment]
The semiconductor device 1 and the manufacturing method thereof according to the third embodiment of the present invention will be described with reference to FIG.

The semiconductor device 1 according to the present embodiment will explain an example in which the configuration of the penetrating portion 25 of the semiconductor device 1 according to the first embodiment is changed. As shown in FIG. 6, the semiconductor device 1 according to the present embodiment has a diameter L3 smaller than the diameter L of the penetrating portion 25 in the first embodiment in the die bond region DL of the die pad 20, and More penetrating parts 27 than the penetrating parts 25 are provided.
Each penetrating portion 27 has a center position at each vertex in a figure formed by combining a plurality of equilateral triangles as viewed from the first surface 20A side, as described in an easy-to-understand manner using virtual lines (dashed lines). Arranged to match. That is, the arrangement intervals of the adjacent through portions 27 are all set at equal intervals.

  Similar to the penetration part 25 of the semiconductor device 1 according to the first embodiment, the penetration part 27 leads a part 30 of the die bond material 3 from the first surface 20A side to the second surface 20B side. The part 30 is formed so as to extend around the penetrating portion 26 along the second surface 20B.

  In the semiconductor device 1 according to the present embodiment, the components other than the penetrating portion 27 are the same as the components of the semiconductor device 1 according to the first embodiment. Further, since the manufacturing method of the semiconductor device 1 is the same as the manufacturing method of the semiconductor device 1 according to the first embodiment, description thereof is omitted here.

  In the semiconductor device 1 and the manufacturing method thereof according to the present embodiment configured as described above, the same operational effects as the operational effects obtained by the semiconductor device 1 and the manufacturing method thereof according to the first embodiment can be obtained. .

[Supplementary explanation of the above embodiment]
The present invention is not limited to the above-described embodiment, and can be modified as follows, for example, without departing from the gist thereof.
In the present invention, a group III-V compound semiconductor substrate may be used as the semiconductor substrate of the semiconductor chip.
Moreover, you may form this invention in the slit shape by which elliptical shape and the corner | angular part were formed in circular arc shape as a planar shape of a penetration part. Furthermore, the planar shape of the penetrating portion may be a polygonal shape in which the flow resistance of the die bond material is within an allowable range, specifically, a hexagonal shape, an octagonal shape, or a polygonal shape.

  DESCRIPTION OF SYMBOLS 1 ... Semiconductor device, 2 ... Lead, 20 ... Die pad, 21 ... Inner lead, 22 ... Outer lead, 25, 26, 27 ... Through part, 20A ... 1st surface, 20B ... 2nd surface, 3, 31 ... Die bond material , 30 ... part, 4 ... semiconductor chip, 40 ... semiconductor substrate, 41, 42 ... external terminal, 43 ... back electrode, 5 ... bonding wire, 6 ... resin sealing body.

Claims (7)

A die pad having a first surface having a die bond region and a second surface facing the first surface in the thickness direction;
A semiconductor chip disposed on the die bond region via a die bond material;
Penetrating from the first surface to the second surface in the die bond region, a part of the die bond material extending from the first surface side to the second surface side, and
A semiconductor device comprising:   2. The semiconductor device according to claim 1, wherein a part of the die bond material is formed to spread around the penetrating portion on the second surface.   The semiconductor device according to claim 1, wherein the penetrating portion is formed in a circular shape when viewed from the first surface side.   The semiconductor device according to claim 3, wherein a plurality of the through portions are arranged at equal intervals.   5. The semiconductor device according to claim 1, wherein the semiconductor chip is formed to have a thickness equal to a thickness of the die pad or a thickness thinner than a thickness of the die pad. A die pad having a first surface having a die bond region and a second surface facing the first surface in the thickness direction, and having a penetrating portion penetrating from the first surface to the second surface in the die bond region A first step of forming a flowable die bond material on the die bond region of
A second step of mounting a semiconductor chip on the die bond region while pressing it through a die bond material, and causing a part of the die bond material to reach the second surface side from the first surface side through the through portion by the pressing. When,
A method for manufacturing a semiconductor device comprising:   The semiconductor according to claim 6, wherein the die-bonding material on the die-bonding region in the second step is formed to have a thickness that is less than half the thickness of the die-bonding material on the die-bonding region in the first step. Device manufacturing method.