JP2019212658A - Light-emitting device - Google Patents

Light-emitting device Download PDF

Info

Publication number
JP2019212658A
JP2019212658A JP2018104684A JP2018104684A JP2019212658A JP 2019212658 A JP2019212658 A JP 2019212658A JP 2018104684 A JP2018104684 A JP 2018104684A JP 2018104684 A JP2018104684 A JP 2018104684A JP 2019212658 A JP2019212658 A JP 2019212658A
Authority
JP
Japan
Prior art keywords
light emitting
light
mounting
emitting element
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2018104684A
Other languages
Japanese (ja)
Inventor
高史 飯野
Takashi Iino
高史 飯野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Electronics Co Ltd
Citizen Watch Co Ltd
Original Assignee
Citizen Electronics Co Ltd
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Electronics Co Ltd, Citizen Watch Co Ltd filed Critical Citizen Electronics Co Ltd
Priority to JP2018104684A priority Critical patent/JP2019212658A/en
Publication of JP2019212658A publication Critical patent/JP2019212658A/en
Pending legal-status Critical Current

Links

Images

Abstract

To provide a light-emitting device that suppresses a difference in temperature in a light-emitting area.SOLUTION: A light-emitting device includes a mounting board 11 having a mounting area 11A, a plurality of light-emitting elements 20 arranged in the mounting area 11A, a plurality of bonding portions 60 that bond the mounting substrate 11 and the plurality of light emitting elements 20, a frame 40 arranged around the light-emitting element 20, and a sealing member 50 disposed inside the frame so as to seal the plurality of light-emitting elements 20, and the thickness of the bonding portion 60 for mounting the light-emitting element 20 on the mounting substrate 11 at the peripheral portion of the mounting area 11A is set to be greater than the thickness of the bonding portion 60 for mounting the light-emitting element 20 on the mounting substrate 11 at the center of the mounting area 11A.SELECTED DRAWING: Figure 1

Description

本発明は、発光装置に関する。   The present invention relates to a light emitting device.

LED(light-emitting diode)素子等の発光素子を利用した発光装置が、照明等に広く利用されている。   Light emitting devices using light emitting elements such as LED (light-emitting diode) elements are widely used for illumination and the like.

例えば、特許文献1には、COB(Chip On Board)方式を用いて複数個のLEDチップを実装基板上に高密度に実装する発光装置が記載されている。   For example, Patent Document 1 describes a light-emitting device that mounts a plurality of LED chips on a mounting substrate with high density using a COB (Chip On Board) method.

特開2017−5135号公報Japanese Unexamined Patent Publication No. 2017-5135

COB方式の発光装置において複数の発光素子からの発する熱は、一般に、実装領域の中央部に比べて周辺部の方が放熱され易い。このため、発光装置が継続して点灯されると、実装領域の中央部に配置された発光素子の方が、周辺部に配置された発光素子に比べて高温になる傾向がある。実装領域内の位置の違いにより生じる発光素子間の温度差は、発光素子の周辺に配置された封止部材の色むら及び/又はクラックの原因となるため、小さくすることが好ましい。   In the COB light emitting device, heat generated from a plurality of light emitting elements is generally more easily radiated in the peripheral portion than in the central portion of the mounting region. For this reason, when the light-emitting device is continuously turned on, the light-emitting element disposed in the central portion of the mounting region tends to have a higher temperature than the light-emitting element disposed in the peripheral portion. The temperature difference between the light emitting elements caused by the difference in the position in the mounting region causes uneven color and / or cracks of the sealing member disposed around the light emitting element, and is preferably reduced.

本発明の目的は、発光素子間の温度差を減少させる発光装置を提供することである。   An object of the present invention is to provide a light emitting device that reduces a temperature difference between light emitting elements.

本発明に係る発光装置は、実装領域を有する実装基板と、実装領域に配置された複数の発光素子と、実装基板と複数の発光素子のそれぞれとを接着する複数の接着部と、発光素子の周囲に配置された枠体と、複数の発光素子を封止する様に枠体の内部に配置された封止部材と、を有し、実装領域の周辺部において発光素子を実装基板に実装するための接着部の厚さは、実装領域の中央部において発光素子を実装基板に実装するための接着部の厚さより厚くなるように設定されている。   A light-emitting device according to the present invention includes a mounting substrate having a mounting region, a plurality of light-emitting elements arranged in the mounting region, a plurality of bonding portions that bond the mounting substrate and each of the plurality of light-emitting elements, A frame body disposed around the frame body and a sealing member disposed inside the frame body so as to seal the plurality of light emitting elements, and the light emitting element is mounted on the mounting substrate in a peripheral portion of the mounting region. Therefore, the thickness of the bonding portion is set so as to be thicker than the thickness of the bonding portion for mounting the light emitting element on the mounting substrate in the central portion of the mounting region.

本発明に係る発光装置によれば、発光素子間の温度差を減少させることが可能である。   According to the light emitting device of the present invention, it is possible to reduce the temperature difference between the light emitting elements.

(A)は発光装置1の一例の平面図であり、(B)は(A)のA−A´線断面図であり、(C)は(B)の部分拡大図である。(A) is a top view of an example of the light-emitting device 1, (B) is the sectional view on the AA 'line of (A), (C) is the elements on larger scale of (B). 接着部60の位置と厚さとの関係を示すグラフである。It is a graph which shows the relationship between the position of the adhesion part 60, and thickness. 発光装置1における熱伝達の状態を示す模式図である。3 is a schematic diagram showing a state of heat transfer in the light emitting device 1. FIG. 発光素子20の温度に関する実験結果を示すグラフである。6 is a graph showing experimental results regarding the temperature of the light emitting element 20.

以下、添付図面を参照して、本発明に係る発光装置について詳細に説明する。ただし、本発明の技術的範囲はそれらの実施の形態に限定されず、特許請求の範囲に記載された発明とその均等物に及ぶ点に留意されたい。   Hereinafter, a light emitting device according to the present invention will be described in detail with reference to the accompanying drawings. However, it should be noted that the technical scope of the present invention is not limited to these embodiments, but extends to the invention described in the claims and equivalents thereof.

<実施形態>
図1(A)は発光装置1の一例の平面図であり、図1(B)は図1(A)のA−A´線断面図であり、図1(C)は図1(B)において矢印Aで示される部分の部分拡大図である。図1(A)においては、封止部材の表示を省略している。
<Embodiment>
1A is a plan view of an example of the light-emitting device 1, FIG. 1B is a cross-sectional view taken along the line AA ′ of FIG. 1A, and FIG. 1C is FIG. 2 is a partially enlarged view of a portion indicated by an arrow A in FIG. In FIG. 1A, the display of the sealing member is omitted.

発光装置1は、基板10、発光素子20、枠体40、封止部材50、及び、接着部60等を有する。   The light emitting device 1 includes a substrate 10, a light emitting element 20, a frame body 40, a sealing member 50, an adhesive portion 60, and the like.

基板10は、実装基板11と、回路基板12とを有する。実装基板11は、正方形の形状を有し、その上面の中央に発光素子20が実装される実装領域11Aを有する金属基板である。実装基板11は、発光素子20により発生した熱を放熱させる放熱基板としても機能するため、耐熱性および放熱性に優れたアルミニウムで構成され、その熱伝導率は、236(W/m*K)である。   The substrate 10 includes a mounting substrate 11 and a circuit substrate 12. The mounting substrate 11 is a metal substrate having a square shape and having a mounting region 11A in which the light emitting element 20 is mounted at the center of the upper surface thereof. Since the mounting substrate 11 also functions as a heat dissipation substrate that dissipates heat generated by the light emitting element 20, it is made of aluminum having excellent heat resistance and heat dissipation, and its thermal conductivity is 236 (W / m * K). It is.

なお、実装基板11の形状は正方形以外の形状(例えば、長方形、円形等)であってもよく、実装基板11の材質は耐熱性と放熱性に優れたものであれば、例えば銅など、別の金属でもよい。   The mounting substrate 11 may have a shape other than a square (for example, a rectangle, a circle, etc.). If the material of the mounting substrate 11 is excellent in heat resistance and heat dissipation, for example, copper or the like may be used. Any metal may be used.

回路基板12は、実装基板11と同じ大きさの同じ形状を有し、その中央部に円形の開口部12Aが形成される。回路基板12は、裏面が接着シート等の接着部材によって実装基板11の上に貼り付けられて固定される。実装基板11の実装領域11Aは、開口部12Aから露出し、開口部12Aは、実装領域11Aの外縁を規定する。回路基板12の表面には、開口部12Aを取り囲むように、一対の配線パターン13A、13Bが形成される。また、回路基板12の表面で対角に位置する2つの角部には、発光装置1を外部電源に接続するための一対の接続電極17A及び17Bが形成され、それぞれ配線パターン13A、13Bと接続している。一方の接続電極17Aはアノードであり、他方の接続電極17Bはカソードである。回路基板12及び一対の配線パターン13A、13Bは、絶縁性の膜であるレジスト14によって覆われ、保護される。   The circuit board 12 has the same shape and the same size as the mounting board 11, and a circular opening 12A is formed at the center thereof. The circuit board 12 is fixed by attaching the back surface of the circuit board 12 onto the mounting board 11 with an adhesive member such as an adhesive sheet. The mounting area 11A of the mounting substrate 11 is exposed from the opening 12A, and the opening 12A defines the outer edge of the mounting area 11A. A pair of wiring patterns 13A and 13B is formed on the surface of the circuit board 12 so as to surround the opening 12A. A pair of connection electrodes 17A and 17B for connecting the light emitting device 1 to an external power source are formed at two corners diagonally located on the surface of the circuit board 12, and are connected to the wiring patterns 13A and 13B, respectively. doing. One connection electrode 17A is an anode, and the other connection electrode 17B is a cathode. The circuit board 12 and the pair of wiring patterns 13A and 13B are covered and protected by a resist 14 that is an insulating film.

発光素子20A〜発光素子20D(総称して単に発光素子20という場合がある)は、矩形状に形成された青色系の半導体発光素子(以下、青色LED素子とも称する)であり、実装領域11A上に複数個配置される。4個の発光素子20Aは、実装領域11Aの中央部11Cに配置され、10個の発光素子20Bは、中央部11Cの外側に隣接するドーナツ型の第1周辺部11Dに配置されている。16個の発光素子20Cは、第1周辺部11Dの外側に隣接するドーナツ型の第2周辺部11Eに配置され、18個の発光素子20Dは、第2周辺部11Eの外側に隣接するドーナツ型の第3周辺部11Fに配置されている。中央部11C及び各周辺部の境界は、実装領域11Aの中心点11Bを中心とする円形状である。発光素子20の上面は、実装基板11の表面と平行に配置され、下面は、接着部60によって実装基板11に接着される。発光素子20には、発光波長域が440〜455nmのInGaN系化合物半導体が用いられているが、発光素子20は、青色光以外の光を発する素子であってもよい。   The light emitting elements 20A to 20D (collectively simply referred to as the light emitting elements 20) are blue semiconductor light emitting elements (hereinafter also referred to as blue LED elements) formed in a rectangular shape, and are mounted on the mounting region 11A. A plurality are arranged. The four light emitting elements 20A are arranged in the central part 11C of the mounting region 11A, and the ten light emitting elements 20B are arranged in the donut-shaped first peripheral part 11D adjacent to the outside of the central part 11C. The 16 light emitting elements 20C are arranged in a donut-shaped second peripheral part 11E adjacent to the outside of the first peripheral part 11D, and the 18 light-emitting elements 20D are a donut type adjacent to the outside of the second peripheral part 11E. The third peripheral portion 11F is disposed. The boundary between the central portion 11C and each peripheral portion has a circular shape centering on the central point 11B of the mounting region 11A. The upper surface of the light emitting element 20 is disposed in parallel with the surface of the mounting substrate 11, and the lower surface is bonded to the mounting substrate 11 by the bonding portion 60. Although the InGaN-based compound semiconductor having an emission wavelength range of 440 to 455 nm is used for the light emitting element 20, the light emitting element 20 may be an element that emits light other than blue light.

発光素子20の総個数は一例であって、他の個数であってもよい。また、その場合、直列と並列についても発光装置に求められるスペックに応じて変更することもできる。   The total number of the light emitting elements 20 is an example, and may be another number. In that case, the series and the parallel can also be changed according to the specifications required for the light emitting device.

発光素子20は、表面に一対の素子電極21及び22を有し、素子電極21及び隣接する発光素子20の素子電極22は、ワイヤ30によって電気的に接続されている。ワイヤ30は、開口部12Aの外周側に位置する発光素子20と回路基板12の配線パターン13A又は13Bとを接続し、複数の発光素子20は、配線パターン13A及び13Bを介して、接続電極17A及び17Bの間に直列接続されている。配線パターン13Aと13Bとの間には、ワイヤ30によって直列接続された12個の発光素子の組が、4組並列に接続されている。接続電極17A及び17Bに不図示の外部電源から直流電圧が印加されることにより、複数の発光素子20は、配線パターン13A、13B及びワイヤ30を介して直流電流を供給され、発光する。   The light emitting element 20 has a pair of element electrodes 21 and 22 on the surface, and the element electrode 21 and the element electrode 22 of the adjacent light emitting element 20 are electrically connected by a wire 30. The wire 30 connects the light emitting element 20 positioned on the outer peripheral side of the opening 12A and the wiring pattern 13A or 13B of the circuit board 12, and the plurality of light emitting elements 20 are connected to the connection electrode 17A via the wiring patterns 13A and 13B. And 17B are connected in series. Between the wiring patterns 13A and 13B, four sets of twelve light emitting elements connected in series by wires 30 are connected in parallel. When a direct current voltage is applied to the connection electrodes 17A and 17B from an external power source (not shown), the plurality of light emitting elements 20 are supplied with a direct current via the wiring patterns 13A and 13B and the wires 30 and emit light.

枠体40は、白色粉末を混入したシリコン樹脂を基板10上に配置した後に硬化して形成された枠状の部材であり、複数の発光素子20の周囲を囲む様に配置される。枠体40の断面形状は中央が高く周辺が低い凸形状である。枠体40は、封止部材50の流出を防止する為のダム材であり、また、発光素子20から枠体40に向けて出射された光を反射して発光装置1の上方に出射させる。   The frame 40 is a frame-shaped member formed by curing a silicon resin mixed with white powder on the substrate 10 and is disposed so as to surround the plurality of light emitting elements 20. The cross-sectional shape of the frame 40 is a convex shape with a high center and a low periphery. The frame body 40 is a dam material for preventing the sealing member 50 from flowing out, and reflects the light emitted from the light emitting element 20 toward the frame body 40 to be emitted above the light emitting device 1.

封止部材50は、透光性を有するシリコン樹脂に蛍光体が含有された部材であり、複数の発光素子20を一体的に封止する為に枠体40の内側に配置される。蛍光体として、発光素子20が出射した青色光を吸収して黄色光に波長変換するYAG(yttrium aluminum garnet)が用いられ、青色光と蛍光体により波長変換された黄色光とが混合されることにより、発光装置1からは白色光が出射する。封止部材50は、シリコン樹脂に代えてエポキシ樹脂など他の樹脂に蛍光体が含有された部材であってもよい。封止部材50の熱伝導率は、0.15(W/m*K)である。枠体40を外縁とする封止部材50の表面を発光領域50Aと称する場合がある。   The sealing member 50 is a member in which a phosphor is contained in a translucent silicon resin, and is disposed inside the frame body 40 to integrally seal the plurality of light emitting elements 20. As the phosphor, YAG (yttrium aluminum garnet) that absorbs the blue light emitted from the light emitting element 20 and converts the wavelength into yellow light is used, and the blue light and the yellow light wavelength-converted by the phosphor are mixed. Thus, white light is emitted from the light emitting device 1. The sealing member 50 may be a member in which a phosphor is contained in another resin such as an epoxy resin instead of the silicon resin. The thermal conductivity of the sealing member 50 is 0.15 (W / m * K). The surface of the sealing member 50 having the frame body 40 as an outer edge may be referred to as a light emitting region 50A.

接着部60は、実装基板11に発光素子20を接着するためのダイボンド材が硬化した部材である。ダイボンド剤は、絶縁樹脂ペーストである。接着部60の熱伝導率は、0.15(W/m*K)である。接着部60の厚さは、ダイボンド材が硬化した後の厚さであり、実装領域11Aの中央部11Cから第3周辺部11Fに向かって段階的に厚くなっている。接着部60の厚さは、ダイボンド材の粘度、チクソ性等を調整することにより実現される。   The bonding portion 60 is a member obtained by curing a die bonding material for bonding the light emitting element 20 to the mounting substrate 11. The die bond agent is an insulating resin paste. The thermal conductivity of the bonding portion 60 is 0.15 (W / m * K). The thickness of the bonding portion 60 is a thickness after the die bonding material is cured, and is gradually increased from the central portion 11C of the mounting region 11A toward the third peripheral portion 11F. The thickness of the adhesion part 60 is implement | achieved by adjusting the viscosity, thixotropy, etc. of a die-bonding material.

図2は、接着部60の位置と厚さとの関係を示すグラフである。   FIG. 2 is a graph showing the relationship between the position and thickness of the bonded portion 60.

各発光素子20を接着する接着部60の厚さは、実装領域11Aの中心点11Bから各発光素子20の中心までの距離と、図2に示す関係とに従って設定されている。接着部60の厚さは、接着部60Aの厚さh1を1としたときの相対的な厚さとして示されている。実施形態においては、発光素子20Aを接着する接着部60Aの厚さh1は2μm、発光素子20Bを接着する接着部60Bの厚さh2は6μmである。また、発光素子20Cを接着する接着部60Cの厚さh3は22μm、発光素子20Dを接着する接着部60Dの厚さh4は50μmである。   The thickness of the bonding portion 60 that bonds each light emitting element 20 is set according to the distance from the center point 11B of the mounting region 11A to the center of each light emitting element 20 and the relationship shown in FIG. The thickness of the bonding portion 60 is shown as a relative thickness when the thickness h1 of the bonding portion 60A is 1. In the embodiment, the thickness h1 of the bonding portion 60A that bonds the light emitting element 20A is 2 μm, and the thickness h2 of the bonding portion 60B that bonds the light emitting element 20B is 6 μm. The thickness h3 of the bonding portion 60C for bonding the light emitting element 20C is 22 μm, and the thickness h4 of the bonding portion 60D for bonding the light emitting element 20D is 50 μm.

なお、図2に示す実装領域11Aの中心点11Bから各発光素子20の中心までの距離と接着部60の厚さとの関係は一例であって、距離と厚さとが比例関係であるなど、他の関係であってもよい。   Note that the relationship between the distance from the center point 11B of the mounting region 11A shown in FIG. 2 to the center of each light emitting element 20 and the thickness of the adhesive portion 60 is an example, and the distance and thickness are proportional to each other. The relationship may be

<実施形態に係る発光装置の作用効果>
図3は、発光装置1における熱伝達の状態を示す模式図である。
<Operational Effect of Light Emitting Device According to Embodiment>
FIG. 3 is a schematic diagram illustrating a state of heat transfer in the light emitting device 1.

発光装置1において発生する熱の主なものは、発光素子20から直接発生する熱と、封止部材50に含まれる蛍光体が光の波長を変換する際に発生する熱であるが、ここでは発光素子20から直接発生する熱について主に議論する。   The main heat generated in the light emitting device 1 is heat directly generated from the light emitting element 20 and heat generated when the phosphor included in the sealing member 50 converts the wavelength of light. The heat generated directly from the light emitting element 20 will be mainly discussed.

実施形態に係る発光装置1において、発光素子20が発光する際に発生した熱は、主に接着部60を介して実装基板11に伝達され、実装基板11から発光装置1の外部に放熱される。また、実装領域11Aの中央部11C内の接着部60Aより、第1周辺部11D内の接着部60Bは厚いため、接着部60Bの熱抵抗は接着部60Aの熱抵抗より大きい。接着部60A及び60Bの熱抵抗の違いにより、発光素子20Bから接着部60Bを介して実装基板11に伝達される熱量は、発光素子20Aから接着部60Aを介して実装基板11に伝達される熱量より少なくなる。発光素子20Bから実装基板11に伝達されない熱は、発光素子20Bの温度を上昇させるが、発光素子20Bの温度は発光素子20Aの温度より低いため、発光素子20Bと発光素子20Aとの温度差は減少する。   In the light emitting device 1 according to the embodiment, heat generated when the light emitting element 20 emits light is transmitted to the mounting substrate 11 mainly through the bonding portion 60 and is radiated from the mounting substrate 11 to the outside of the light emitting device 1. . Further, since the adhesive portion 60B in the first peripheral portion 11D is thicker than the adhesive portion 60A in the central portion 11C of the mounting region 11A, the thermal resistance of the adhesive portion 60B is larger than the thermal resistance of the adhesive portion 60A. Due to the difference in thermal resistance between the bonding portions 60A and 60B, the amount of heat transferred from the light emitting element 20B to the mounting substrate 11 via the bonding portion 60B is the amount of heat transferred from the light emitting element 20A to the mounting substrate 11 via the bonding portion 60A. Less. The heat that is not transferred from the light emitting element 20B to the mounting substrate 11 raises the temperature of the light emitting element 20B. However, since the temperature of the light emitting element 20B is lower than the temperature of the light emitting element 20A, the temperature difference between the light emitting element 20B and the light emitting element 20A is Decrease.

発光素子20Bと発光素子20Aとの温度差が減少することにより、それぞれの発光素子の近傍における封止部材50の熱による変色の度合いが均一化されるため、発光素子20A及び20Bの近傍の封止部材50を経由して出射される光の色むらは減少する。また、発光素子20Bと発光素子20Aとの温度差が減少することにより、発光素子20A及び20Bの近傍において封止部材50におけるクラックの発生は減少する。   Since the temperature difference between the light emitting element 20B and the light emitting element 20A is reduced, the degree of discoloration due to heat of the sealing member 50 in the vicinity of each light emitting element is made uniform, so that the sealing in the vicinity of the light emitting elements 20A and 20B is performed. The uneven color of the light emitted through the stop member 50 is reduced. Further, since the temperature difference between the light emitting element 20B and the light emitting element 20A is reduced, the occurrence of cracks in the sealing member 50 is reduced in the vicinity of the light emitting elements 20A and 20B.

上記した発光素子20Aと20Bとの関係は、発光素子20Aと20C、20Aと20Dについても同様に成り立つ。このため、発光領域50A全体から出射される光の色むらは減少し、封止部材50におけるクラックの発生は減少する。   The relationship between the light emitting elements 20A and 20B described above is similarly established for the light emitting elements 20A and 20C and 20A and 20D. For this reason, the color unevenness of the light emitted from the entire light emitting region 50A is reduced, and the occurrence of cracks in the sealing member 50 is reduced.

<実験結果>
図4は、発光素子20の温度に関する実験結果を示すグラフである。実験には図1に示す発光装置1を使用した。実験の主な条件を表1に示す。
<Experimental result>
FIG. 4 is a graph showing experimental results regarding the temperature of the light emitting element 20. The light-emitting device 1 shown in FIG. 1 was used for the experiment. Table 1 shows the main conditions of the experiment.

Figure 2019212658
Figure 2019212658

一般に、発光素子20A〜20Dの温度差が2℃以内であれば、封止部材50の色むらの発生を許容範囲内に収めることができ、10℃以内であれば、封止部材50のクラックの発生を許容範囲内に収めることができる。ここで、色むらの発生が許容範囲内とは、CIELAB色空間又はCIELUV色空間において、色差ΔE≦0.8である範囲をいう。実験の結果、図4に示すように4個の発光素子20Aの平均温度が約140℃、10個の発光素子20Bの平均温度が約138℃、16個の発光素子20Cの平均温度が約135℃、18個の発光素子20Dの平均温度が約131℃であった。温度差の最大値は、発光素子20Aと発光素子20Dとの温度差の約9℃であったため、発光装置1は、封止部材50の色むら及びクラックの発生を許容範囲内に収めることができた。   In general, if the temperature difference between the light emitting elements 20A to 20D is within 2 ° C., the color unevenness of the sealing member 50 can be within an allowable range. Can be within an allowable range. Here, the occurrence of color unevenness within an allowable range means a range where the color difference ΔE ≦ 0.8 in the CIELAB color space or the CIELV color space. As a result of the experiment, as shown in FIG. 4, the average temperature of the four light emitting elements 20A is about 140 ° C., the average temperature of the ten light emitting elements 20B is about 138 ° C., and the average temperature of the sixteen light emitting elements 20C is about 135. The average temperature of 18 light emitting elements 20D was about 131 ° C. Since the maximum value of the temperature difference is about 9 ° C. of the temperature difference between the light emitting element 20 </ b> A and the light emitting element 20 </ b> D, the light emitting device 1 can keep the uneven color and cracks of the sealing member 50 within the allowable range. did it.

図1に示す発光装置1では、実装領域11Aの中心点11Bからの距離に応じて4つの段階の高さの接着剤を利用したが、他の階数としてもよい。   In the light emitting device 1 shown in FIG. 1, four levels of adhesive are used according to the distance from the center point 11B of the mounting region 11A, but other floors may be used.

以上説明した様に、実装領域内の中央部で発光素子と実装基板とを接着する接着部より、周辺部で発光素子と実装基板とを接着する接着部を厚くすることによって、発光領域内における発光素子間の温度差を減少させることができる。   As described above, by thickening the bonding portion for bonding the light emitting element and the mounting substrate at the peripheral portion, the bonding portion for bonding the light emitting element and the mounting substrate at the peripheral portion is made thicker in the light emitting region. The temperature difference between the light emitting elements can be reduced.

1 発光装置
11 実装基板
11A 実装領域
20、20A、20B、20C、20D 発光素子
40 枠体
50 封止部材
60、60A、60B、60C、60D 接着部
DESCRIPTION OF SYMBOLS 1 Light-emitting device 11 Mounting board 11A Mounting area 20, 20A, 20B, 20C, 20D Light emitting element 40 Frame body 50 Sealing member 60, 60A, 60B, 60C, 60D Bonding part

Claims (2)

実装領域を有する実装基板と、
前記実装領域に配置された複数の発光素子と、
前記実装基板と前記複数の発光素子のそれぞれとを接着する複数の接着部と、
前記発光素子の周囲に配置された枠体と、
前記複数の発光素子を封止する様に前記枠体の内部に配置された封止部材と、を有し、
前記実装領域の周辺部において前記発光素子を前記実装基板に実装するための前記接着部の厚さは、前記実装領域の中央部において前記発光素子を前記実装基板に実装するための前記接着部の厚さより厚くなるように設定されている、
ことを特徴とする発光装置。
A mounting board having a mounting area;
A plurality of light emitting elements arranged in the mounting region;
A plurality of bonding portions for bonding the mounting substrate and each of the plurality of light emitting elements;
A frame disposed around the light emitting element;
A sealing member disposed inside the frame so as to seal the plurality of light emitting elements,
The thickness of the adhesive portion for mounting the light emitting element on the mounting substrate in the peripheral portion of the mounting area is the same as the thickness of the adhesive portion for mounting the light emitting element on the mounting substrate in the central portion of the mounting area. Set to be thicker than the thickness,
A light emitting device characterized by that.
前記接着部の厚さは、前記実装領域の前記中央部から前記周辺部に向かって段階的に厚くなるように設定されている、請求項1に記載の発光装置。   2. The light emitting device according to claim 1, wherein a thickness of the adhesive portion is set so as to gradually increase from the central portion of the mounting region toward the peripheral portion.
JP2018104684A 2018-05-31 2018-05-31 Light-emitting device Pending JP2019212658A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2018104684A JP2019212658A (en) 2018-05-31 2018-05-31 Light-emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018104684A JP2019212658A (en) 2018-05-31 2018-05-31 Light-emitting device

Publications (1)

Publication Number Publication Date
JP2019212658A true JP2019212658A (en) 2019-12-12

Family

ID=68846934

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018104684A Pending JP2019212658A (en) 2018-05-31 2018-05-31 Light-emitting device

Country Status (1)

Country Link
JP (1) JP2019212658A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07288341A (en) * 1994-04-18 1995-10-31 Nichia Chem Ind Ltd Led display
JP2002062597A (en) * 2000-05-26 2002-02-28 Gretag Imaging Trading Ag Photographic image acquiring device
JP2008085302A (en) * 2006-08-29 2008-04-10 Toshiba Lighting & Technology Corp Illumination apparatus
JP2017228699A (en) * 2016-06-23 2017-12-28 スタンレー電気株式会社 Light-emitting diode device
CN107731757A (en) * 2017-09-27 2018-02-23 开发晶照明(厦门)有限公司 Electrooptical device and its substrate

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07288341A (en) * 1994-04-18 1995-10-31 Nichia Chem Ind Ltd Led display
JP2002062597A (en) * 2000-05-26 2002-02-28 Gretag Imaging Trading Ag Photographic image acquiring device
JP2008085302A (en) * 2006-08-29 2008-04-10 Toshiba Lighting & Technology Corp Illumination apparatus
JP2017228699A (en) * 2016-06-23 2017-12-28 スタンレー電気株式会社 Light-emitting diode device
CN107731757A (en) * 2017-09-27 2018-02-23 开发晶照明(厦门)有限公司 Electrooptical device and its substrate

Similar Documents

Publication Publication Date Title
US9472743B2 (en) Light emitting diode package
KR100981214B1 (en) Light emitting diode package
KR100634189B1 (en) Thin light emitting diode package and method for manufacturing the same
KR20090002319A (en) Led package and manufacturing method the same
WO2017188278A1 (en) Light-emitting device
JP6567050B2 (en) Light emitting device and manufacturing method thereof
JP5697091B2 (en) Semiconductor light emitting device
US9093626B2 (en) Luminescence device
US10429050B2 (en) Light-emitting apparatus having different packaging densities
US10825963B2 (en) Light-emitting device and method for manufacturing same
US9093281B2 (en) Luminescence device
US10629786B2 (en) Light emitting device and manufacturing method thereof
JP2015138902A (en) Light-emitting device
JP2019212658A (en) Light-emitting device
JP2019106474A (en) Light emitting device
JP2009076803A (en) Light emitting module and light emitting device
JP7444718B2 (en) light emitting device
JP2019040956A (en) Semiconductor light-emitting device
WO2018061889A1 (en) Light-emitting device
KR100941857B1 (en) Light emitting device
JP2014029911A (en) Light-emitting device
JP2019121678A (en) Light-emitting device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20210408

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20220210

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220215

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20220809