JP2019186304A - Joining apparatus and joining method - Google Patents

Abstract

To provide a technique capable of suppressing distortion of a substrate after bonding.SOLUTION: A joining apparatus according to an aspect of the present disclosure includes a first holding unit, a second holding unit, and a plurality of strain forming units. The first holding unit has a plurality of outer suction units arranged in the circumferential direction, and sucks and holds the outer peripheral part of a first substrate by using the plurality of outer suction units. The second holding unit sucks and holds the second substrate. A striker presses the central unit of the first substrate sucked and held by the first holding unit to contact a second substrate sucked and held by the second holding unit. The plurality of strain forming units form strain on the first substrate by pressing the peripheral edge part of the first substrate located radially outward of the plurality of outer suction units toward the radially inward direction.SELECTED DRAWING: Figure 6

Description

  The present disclosure relates to a joining apparatus and a joining method.

  Conventionally, a bonding apparatus for bonding substrates such as semiconductor wafers by intermolecular force is known.

  In this type of bonding apparatus, the center portion of the upper substrate is pushed down to contact the center portion of the lower substrate. Thereby, first, the central portions of the upper substrate and the lower substrate are bonded to each other by intermolecular force to form a bonded region, and this bonded region expands toward the outer peripheral portion of the substrate. The lower substrate is bonded (see Patent Document 1).

Japanese Patent Laying-Open No. 2015-095579

  The present disclosure provides a technique capable of suppressing distortion of substrates after bonding.

  A joining device according to an aspect of the present disclosure includes a first holding unit, a second holding unit, and a plurality of strain forming units. The first holding part has a plurality of outer suction parts arranged in the circumferential direction, and sucks and holds the outer peripheral part of the first substrate using the plurality of outer suction parts. The second holding unit sucks and holds the second substrate. The striker presses the central portion of the first substrate sucked and held by the first holding portion to contact the second substrate sucked and held by the second holding portion. The plurality of strain forming portions form strain on the first substrate by pressing the peripheral edge portion of the first substrate located radially outward of the plurality of outer suction portions toward the radially inward direction.

  According to this indication, distortion of a substrate after joining can be controlled.

Drawing 1 is a mimetic diagram showing the composition of the joining system concerning an embodiment. Drawing 2 is a mimetic diagram showing the composition of the joining system concerning an embodiment. FIG. 3 is a schematic diagram illustrating a state before bonding of the first substrate and the second substrate according to the embodiment. FIG. 4 is a schematic diagram illustrating a configuration of the bonding apparatus according to the embodiment. FIG. 5 is a schematic diagram illustrating a configuration of the bonding apparatus according to the embodiment. FIG. 6 is a schematic diagram illustrating the first holding unit and the second holding unit according to the embodiment. FIG. 7 is a schematic diagram showing an example of a state of expansion of the bonding region. FIG. 8 is a schematic diagram showing an example of a state of expansion of the joining region. FIG. 9 is a schematic view of the first holding unit as viewed from below. FIG. 10 is a schematic diagram illustrating an example of an arrangement of a plurality of strain forming portions. FIG. 11 is a flowchart illustrating a part of processing executed by the joining system according to the embodiment. FIG. 12 is a diagram for explaining the operation of the joining process. FIG. 13 is a diagram for explaining the operation of the bonding process. FIG. 14 is a schematic diagram illustrating a configuration of a strain forming unit according to a first modification. FIG. 15 is a schematic diagram illustrating a configuration of a strain forming unit according to a first modification. FIG. 16 is a schematic diagram illustrating a configuration of a strain forming unit according to a second modification. FIG. 17 is a schematic diagram illustrating a configuration of a strain forming unit according to a second modification.

  Hereinafter, modes for carrying out a bonding apparatus and a bonding method according to the present disclosure (hereinafter referred to as “embodiments”) will be described in detail with reference to the drawings. In addition, the joining apparatus and joining method by this indication are not limited by this embodiment. In addition, the embodiments can be appropriately combined within a range that does not contradict processing contents. In the following embodiments, the same portions are denoted by the same reference numerals, and redundant description is omitted.

  In addition, in each of the drawings referred to below, for easy understanding, an orthogonal coordinate system in which the X-axis direction, the Y-axis direction, and the Z-axis direction orthogonal to each other are defined and the Z-axis positive direction is the vertical upward direction is shown. There is a case. Further, the rotation direction with the vertical axis as the rotation center may be referred to as the θ direction.

<Joint system>
First, the structure of the joining system which concerns on embodiment is demonstrated with reference to FIGS. 1-3. 1 and 2 are schematic diagrams illustrating a configuration of a bonding system according to an embodiment. FIG. 3 is a schematic diagram illustrating a state before the first substrate and the second substrate according to the embodiment are bonded.

  A bonding system 1 shown in FIG. 1 forms a superposed substrate T by bonding a first substrate W1 and a second substrate W2 (see FIG. 3).

  The first substrate W1 is a substrate in which a plurality of electronic circuits are formed on a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer. The second substrate W2 is, for example, a bare wafer on which no electronic circuit is formed. The first substrate W1 and the second substrate W2 have substantially the same diameter. Note that, like the first substrate W1, the second substrate W2 may be a substrate in which a plurality of electronic circuits are formed on a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer.

  In the following, as shown in FIG. 3, the plate surface of the first substrate W1 on the side bonded to the second substrate W2 is referred to as “bonding surface W1j” and is on the side opposite to the bonding surface W1j. The plate surface is described as “non-bonding surface W1n”. Of the plate surfaces of the second substrate W2, the plate surface on the side bonded to the first substrate W1 is referred to as “bonded surface W2j”, and the plate surface opposite to the bonded surface W2j is referred to as “non-bonded surface W2n”. ".

  As shown in FIG. 1, the joining system 1 includes a carry-in / out station 2 and a processing station 3. The carry-in / out station 2 is disposed on the X axis negative direction side of the processing station 3 and is integrally connected to the processing station 3.

  The carry-in / out station 2 includes a mounting table 10 and a transfer area 20. The mounting table 10 includes a plurality of mounting plates 11. On each mounting plate 11, cassettes C1, C2, and C3 for storing a plurality of (for example, 25) substrates in a horizontal state are mounted. For example, the cassette C1 is a cassette that accommodates the first substrate W1, the cassette C2 is a cassette that accommodates the second substrate W2, and the cassette C3 is a cassette that accommodates the superposed substrate T.

  The conveyance area 20 is arranged adjacent to the X-axis positive direction side of the mounting table 10. In the transport region 20, a transport path 21 extending in the Y-axis direction and a transport device 22 that can move along the transport path 21 are provided. The transport device 22 can move not only in the Y-axis direction but also in the X-axis direction and can turn around the Z-axis. The transfer device 22 is configured to transfer the first substrate W1, the second substrate W2, and the superposition substrate T between the cassettes C1 to C3 mounted on the mounting plate 11 and a third processing block G3 of the processing station 3 described later. Transport.

  Note that the number of cassettes C1 to C3 mounted on the mounting plate 11 is not limited to the illustrated one. In addition to the cassettes C1, C2, and C3, the placement plate 11 may be loaded with a cassette or the like for collecting a substrate having a problem.

  In the processing station 3, for example, three processing blocks G1, G2, and G3 are provided. The first processing block G1 is arranged on the front side of the processing station 3 (Y-axis negative direction side in FIG. 1). The second processing block G2 is disposed on the back side of the processing station 3 (Y-axis positive direction side in FIG. 1), and the third processing block G3 is on the loading / unloading station 2 side of the processing station 3 (X in FIG. 1). (Axis negative direction side)

  In the first processing block G1, a surface modification device 30 for modifying the bonding surfaces W1j and W2j of the first substrate W1 and the second substrate W2 is disposed. The surface modification apparatus 30 cuts the bond of SiO2 in the bonding surfaces W1j and W2j of the first substrate W1 and the second substrate W2 to form single-bonded SiO, so that the bonding surface W1j is easily hydrophilized thereafter. , W2j is modified.

  Specifically, in the surface reformer 30, for example, oxygen gas or nitrogen gas, which is a processing gas, is excited to be turned into plasma and ionized in a reduced pressure atmosphere. The oxygen ions or nitrogen ions are irradiated onto the bonding surfaces W1j and W2j of the first substrate W1 and the second substrate W2, whereby the bonding surfaces W1j and W2j are modified by plasma treatment.

  In the second processing block G2, a surface hydrophilizing device 40 and a joining device 41 are arranged. The surface hydrophilizing device 40 hydrophilizes the bonding surfaces W1j and W2j of the first substrate W1 and the second substrate W2 with pure water, for example, and cleans the bonding surfaces W1j and W2j. Specifically, the surface hydrophilization device 40 supplies pure water onto the first substrate W1 or the second substrate W2, for example, while rotating the first substrate W1 or the second substrate W2 held by the spin chuck. . Thereby, the pure water supplied onto the first substrate W1 or the second substrate W2 diffuses on the bonding surfaces W1j, W2j of the first substrate W1 or the second substrate W2, and the bonding surfaces W1j, W2j are hydrophilized. .

The bonding apparatus 41 bonds the hydrophilized first substrate W1 and second substrate W2 by intermolecular force. The configuration of the joining device 41 will be described later.

  In the third processing block G3, as shown in FIG. 2, transition (TRS) devices 50 and 51 for the first substrate W1, the second substrate W2, and the superposed substrate T are provided in order from the bottom.

  A transport area 60 is formed in an area surrounded by the first processing block G1, the second processing block G2, and the third processing block G3. A transport device 61 is disposed in the transport area 60. The transfer device 61 has a transfer arm that can move around the vertical direction, the horizontal direction, and the vertical axis, for example. The transfer device 61 moves in the transfer region 60 and transfers the first substrate W1 and the second substrate to predetermined devices in the first processing block G1, the second processing block G2, and the third processing block G3 adjacent to the transfer region 60. The substrate W2 and the superposed substrate T are transported.

  The joining system 1 includes a control device 70. The control device 70 controls the operation of the bonding system 1. The control device 70 is a computer, for example, and includes a control unit and a storage unit (not shown). The control unit includes a microcomputer having a central processing unit (CPU), a read only memory (ROM), a random access memory (RAM), an input / output port, and various circuits. The CPU of such a microcomputer realizes control to be described later by reading and executing a program stored in the ROM. The storage unit is realized by, for example, a semiconductor memory element such as a RAM or a flash memory, or a storage device such as a hard disk or an optical disk.

  Note that such a program may be recorded on a computer-readable recording medium and may be installed in the storage unit of the control device 70 from the recording medium. Examples of the computer-readable recording medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

<Jointing device>
Next, the structure of the joining apparatus 41 is demonstrated with reference to FIG. 4 and FIG. 4 and 5 are schematic views illustrating the configuration of the bonding apparatus 41 according to the embodiment.

  As shown in FIG. 4, the joining apparatus 41 includes a processing container 100 that can seal the inside. A loading / unloading port 101 for the first substrate W <b> 1, the second substrate W <b> 2, and the overlapped substrate T is formed on the side surface of the processing container 100 on the transfer region 60 side, and an opening / closing shutter 102 is provided at the loading / unloading port 101.

  The inside of the processing container 100 is partitioned by the inner wall 103 into a transport area T1 and a processing area T2. The loading / unloading port 101 described above is formed on the side surface of the processing container 100 in the transfer region T1. In addition, a carry-in / out port 104 for the first substrate W <b> 1, the second substrate W <b> 2, and the overlapped substrate T is also formed on the inner wall 103.

  In the transport region T1, the transition 110, the substrate transport mechanism 111, the reversing mechanism 130, and the position adjusting mechanism 120 are arranged in this order from the loading / unloading port 101 side, for example.

  The transition 110 temporarily places the first substrate W1, the second substrate W2, and the superposed substrate T. The transition 110 is formed, for example, in two stages, and any two of the first substrate W1, the second substrate W2, and the superposed substrate T can be placed simultaneously.

  As shown in FIGS. 4 and 5, the substrate transport mechanism 111 is movable in the vertical direction (Z-axis direction), the horizontal direction (Y-axis direction, the X-axis direction), and the direction around the vertical axis (θ direction), for example. It has a transfer arm. The substrate transport mechanism 111 can transport the first substrate W1, the second substrate W2, and the superposed substrate T within the transport region T1 or between the transport region T1 and the processing region T2.

  The position adjustment mechanism 120 adjusts the horizontal direction of the first substrate W1 and the second substrate W2. Specifically, the position adjustment mechanism 120 includes a base 121 having a holding unit (not shown) that holds and rotates the first substrate W1 and the second substrate W2, and a notch portion of the first substrate W1 and the second substrate W2. And a detection unit 122 that detects the position of. The position adjustment mechanism 120 detects the positions of the notch portions of the first substrate W1 and the second substrate W2 using the detection unit 122 while rotating the first substrate W1 and the second substrate W2 held on the base 121. To adjust the position of the notch. Thereby, the horizontal direction of the first substrate W1 and the second substrate W2 is adjusted.

  The reversing mechanism 130 reverses the front and back of the first substrate W1. Specifically, the reversing mechanism 130 includes a holding arm 131 that holds the first substrate W1. The holding arm 131 extends in the horizontal direction (X-axis direction). The holding arm 131 is provided with holding members 132 for holding the first substrate W1, for example, at four locations.

  The holding arm 131 is supported by a drive unit 133 including a motor, for example. The holding arm 131 is rotatable around the horizontal axis by the driving unit 133. The holding arm 131 is rotatable about the drive unit 133 and is movable in the horizontal direction (X-axis direction). Below the drive unit 133, for example, another drive unit (not shown) provided with a motor or the like is provided. By this other driving unit, the driving unit 133 can move in the vertical direction along the support pillar 134 extending in the vertical direction.

  As described above, the first substrate W1 held by the holding member 132 can be rotated around the horizontal axis by the driving unit 133 and can be moved in the vertical direction and the horizontal direction. Further, the first substrate W1 held by the holding member 132 can move between the position adjustment mechanism 120 and a first holding unit 140, which will be described later, by rotating around the driving unit 133.

  In the processing region T2, a first holding unit 140 that sucks and holds the upper surface (non-bonded surface W1n) of the first substrate W1 from above and a lower surface (non-bonded surface W2n) of the second substrate W2 that sucks and holds from below. 2 holding part 141 is provided. The second holding unit 141 is provided below the first holding unit 140 and is configured to be disposed to face the first holding unit 140. The first holding part 140 and the second holding part 141 are, for example, vacuum chucks.

  As shown in FIG. 5, the first holding unit 140 is supported by a support member 180 provided above the first holding unit 140. The support member 180 is fixed to the ceiling surface of the processing container 100 through a plurality of support columns 181, for example.

  An upper imaging unit 145 that images the upper surface (bonding surface W2j) of the second substrate W2 held by the second holding unit 141 is provided on the side of the first holding unit 140. For the upper imaging unit 145, for example, a CCD camera is used.

  The second holding unit 141 is supported by the first moving unit 160 provided below the second holding unit 141. The first moving unit 160 moves the second holding unit 141 in the horizontal direction (X-axis direction) as will be described later. The first moving unit 160 is configured to be able to move the second holding unit 141 in the vertical direction and to rotate around the vertical axis.

  The first moving unit 160 is provided with a lower imaging unit 146 that images the lower surface (bonding surface W1j) of the first substrate W1 held by the first holding unit 140. For the lower imaging unit 146, for example, a CCD camera is used.

  The first moving unit 160 is attached to the pair of rails 162 and 162. The pair of rails 162 and 162 are provided on the lower surface side of the first moving unit 160 and extend in the horizontal direction (X-axis direction). The first moving unit 160 is configured to be movable along the rail 162.

  The pair of rails 162 and 162 are disposed on the second moving portion 163. The second moving unit 163 is attached to the pair of rails 164 and 164. The pair of rails 164 and 164 are provided on the lower surface side of the second moving part 163 and extend in the horizontal direction (Y-axis direction). The second moving unit 163 is configured to be movable in the horizontal direction (Y-axis direction) along the rail 164. The pair of rails 164 and 164 are disposed on a mounting table 165 provided on the bottom surface of the processing container 100.

  The first moving unit 160, the second moving unit 163, and the like constitute an alignment unit 166. The alignment unit 166 moves the second holding unit 141 in the X-axis direction, the Y-axis direction, and the θ direction so that the first holding unit 140 holds the first substrate W1 and the second holding unit 141. Horizontal alignment with the held second substrate W2 is performed. In addition, the alignment unit 166 moves the second holding unit 141 in the Z-axis direction, so that the first substrate W1 held by the first holding unit 140 and the second holding unit 141 hold the first holding unit 141. Vertical alignment with the two substrates W2 is performed.

  Here, the second holding unit 141 is moved in the X-axis direction, the Y-axis direction, and the θ-direction, but the alignment unit 166, for example, moves the second holding unit 141 in the X-axis direction and the Y-axis direction. The first holding unit 140 may be moved in the θ direction. Further, here, the second holding unit 141 is moved in the Z-axis direction, but the alignment unit 166 may move the first holding unit 140 in the Z-axis direction, for example.

  Next, the structure of the 1st holding | maintenance part 140 and the 2nd holding | maintenance part 141 is demonstrated with reference to FIG. FIG. 6 is a schematic diagram illustrating the first holding unit 140 and the second holding unit 141 according to the embodiment.

  As shown in FIG. 6, the first holding part 140 has a main body part 170. The main body 170 has a smaller diameter than the first substrate W1. For this reason, the first substrate W <b> 1 is sucked and held by the first holding portion 140 in a state of slightly protruding outward from the main body portion 170 in the radial direction. The main body 170 is supported by the support member 180.

  The support member 180 and the main body portion 170 are formed with through holes 176 that penetrate the support member 180 and the main body portion 170 in the vertical direction. The position of the through hole 176 corresponds to the central portion of the first substrate W1 that is sucked and held by the first holding portion 140. The pressing pin 191 of the striker 190 is inserted through the through hole 176.

  The striker 190 is disposed on the upper surface of the support member 180 and includes a pressing pin 191, an actuator unit 192, and a linear motion mechanism 193. The pressing pin 191 is a cylindrical member extending along the vertical direction and is supported by the actuator unit 192.

  The actuator unit 192 generates a constant pressure in a certain direction (here, vertically downward) by air supplied from, for example, an electropneumatic regulator (not shown). The actuator portion 192 can control the pressing load applied to the central portion of the first substrate W1 by contacting the central portion of the first substrate W1 with the air supplied from the electropneumatic regulator. The tip of the actuator portion 192 is vertically movable through the through-hole 176 by air from the electropneumatic regulator.

  The actuator unit 192 is supported by the linear motion mechanism 193. The linear motion mechanism 193 moves the actuator unit 192 in the vertical direction by, for example, a drive unit incorporating a motor.

  The striker 190 is configured as described above, and the movement of the actuator unit 192 is controlled by the linear motion mechanism 193, and the pressing load of the first substrate W1 by the pressing pin 191 is controlled by the actuator unit 192. Thereby, the striker 190 presses the center part of the 1st board | substrate W1 adsorbed and hold | maintained at the 1st holding | maintenance part 140, and makes it contact the 2nd board | substrate W2.

  A plurality of pins 171 that come into contact with the upper surface (non-bonding surface W1n) of the first substrate W1 are provided on the lower surface of the main body 170. For example, the plurality of pins 171 have a diameter of 0.1 mm to 1 mm and a height of several tens to several hundreds of μm. The plurality of pins 171 are evenly arranged at intervals of 2 mm, for example.

  The 1st holding | maintenance part 140 is provided with the some adsorption | suction part which adsorb | sucks the 1st board | substrate W1 in the one part area | region of the area | region in which these several pins 171 are provided. In the present embodiment, the plurality of suction portions are arranged according to the anisotropy of the physical properties of the first substrate W1.

  Here, the plurality of suction units included in the first holding unit 140 will be described with reference to FIGS. 7 and 8 are schematic views showing an example of a state of expansion of the joining region. FIG. 9 is a schematic view of the first holding unit 140 as viewed from below. Note that the negative Miller index is usually expressed by adding a “−” (bar) on a number, but in this specification, it is expressed by adding a negative sign in front of the number.

  As shown in FIG. 7, the first substrate W1 and the second substrate W2 are single crystal silicon wafers whose crystal direction in the direction perpendicular to the surface (bonding surface) is [100]. The notch portion N of the first substrate W1 and the second substrate W2 is formed on the outer edge in the [011] crystal direction of the first substrate W1 and the second substrate W2. The diameters of the first substrate W1 and the second substrate W2 are, for example, 300 mm.

  When the central portion of the first substrate W1 is pushed down and brought into contact with the central portion of the second substrate W2, the central portion of the first substrate W1 and the central portion of the second substrate W2 are bonded by intermolecular force, thereby both substrates. A junction region A is formed at the center portion of each. Thereafter, a bonding wave is generated in which the bonding region A expands from the center portion of both substrates toward the outer peripheral portion, and the bonding surfaces W1j and W2j of the first substrate W1 and the second substrate W2 are bonded together.

  If the first substrate W1 is held using the holding unit that holds the entire outer periphery of the first substrate W1, and the above-described bonding process is performed, the bonding area A is not concentric but is unevenly enlarged. It will be.

  Specifically, as shown in FIG. 8, the bonding area A expands faster in the 45 degree direction than in the 90 degree direction. The 90-degree direction refers to a direction with a 90-degree period based on a direction from the center of the first substrate W1 toward the [0-11] crystal direction parallel to the surface of the first substrate W1 (0 shown in FIG. 8). Degrees, 90 degrees, 180 degrees, and 270 degrees). The 45-degree direction refers to a direction with a period of 90 degrees based on a direction from the center of the first substrate W1 toward the [010] crystal direction parallel to the surface of the first substrate W1 (45 degrees shown in FIG. 135 degrees, 225 degrees, and 315 degrees). As a result, the shape of the joining area A, which was initially circular, approaches a quadrangle whose apex is the 45 degree direction as it expands.

  As this cause, anisotropy of physical properties such as Young's modulus of the first substrate W1 and the second substrate W2 can be considered.

  For example, the Young's modulus, Poisson's ratio, and shear modulus of a single crystal silicon wafer change with a 90 degree period. Specifically, the Young's modulus of the single crystal silicon wafer is highest in the 90 degree direction and lowest in the 45 degree direction. Further, the Poisson's ratio and the shear elastic modulus are highest in the 45 degree direction and lowest in the 90 degree direction.

  As described above, since the single crystal silicon wafer has anisotropy in physical properties such as Young's modulus, the distribution of stress and strain applied to the first substrate W1 is not concentric but non-uniform. And it is thought that this non-uniform distribution exacerbates the distortion (distortion) of the superposed substrate T by expanding the bonding region A non-uniformly.

  Therefore, in this embodiment, instead of holding the entire circumference of the outer peripheral portion of the first substrate W1, the first region is the 45 ° direction region in the outer peripheral portion of the first substrate W1 where the bonding region A expands the fastest. The holding unit 140 was used for holding.

  Specifically, as illustrated in FIG. 9, a plurality of outer suction portions 301 and a plurality of inner suction portions 302 that vacuum-suck and suck the first substrate W <b> 1 are disposed on the lower surface of the main body 170 of the first holding portion 140. Is provided. The plurality of outer suction portions 301 and the plurality of inner suction portions 302 have an arc-shaped suction region in plan view. Further, the plurality of outer suction portions 301 and the plurality of inner suction portions 302 have the same height as the pin 171.

  The plurality of outer suction portions 301 are arranged along the circumferential direction with respect to the outer peripheral portion of the main body portion 170. Specifically, the plurality of outer adsorption portions 301 are arranged so as to be deviated by 45 degrees in the circumferential direction with respect to the four first outer adsorption portions 311 arranged at intervals of 90 degrees and the four first outer adsorption portions 311. Four second outer suction portions 312. The four first outer suction portions 311 and the four second outer suction portions 312 suck and hold the outer peripheral portion of the first substrate W1. The outer peripheral portion of the first substrate W1 means a portion within 15% of the radius of the first substrate W1 from the outer peripheral end of the first substrate W1.

  The four first outer suction portions 311 are arranged in the 45-degree direction on the first substrate W1. Specifically, the four first outer suction portions 311 are arranged at a position where the central portion of the arc-shaped suction region coincides with the 45-degree direction on the first substrate W1. Also, a total of four second outer suction portions 312 are arranged in the 90-degree direction on the first substrate W1. Specifically, the four second outer suction portions 312 are arranged at a position where the central portion of the arc-shaped suction region coincides with the 90-degree direction on the first substrate W1.

  The four first outer suction units 311 are connected to a single first vacuum pump 171b via the first suction pipe 171a, and suck the first substrate W1 by evacuation by the first vacuum pump 171b. The four second outer suction units 312 are connected to a single second vacuum pump 172b via the second suction pipe 172a, and suck the first substrate W1 by evacuation by the second vacuum pump 172b. Here, for easy understanding, only the piping configuration for any one of the plurality of first outer adsorption portions 311 is shown. The same applies to the plurality of second outer suction portions 312.

  Thus, when the direction from the central portion of the first substrate W1 toward the [0-11] crystal direction parallel to the surface of the first substrate W1 is defined as 0 degrees, the plurality of first outer adsorption portions 311 are They are arranged at 90 degree intervals with a 45 degree direction as a reference. In addition, the plurality of second outer adsorption portions 312 are arranged at intervals of 90 degrees with reference to the direction of 0 degrees.

  The plurality of inner suction portions 302 are arranged side by side along the circumferential direction on the radially inner side of the main body 170 than the plurality of outer suction portions 301. Specifically, the plurality of inner suction portions 302 are arranged in the 45 degree direction on the first substrate W1 and are arranged in the 90 degree direction. The plurality of inner suction portions 302 are connected to a single third vacuum pump 173b via the third suction pipe 173a, and suck the first substrate W1 by evacuation by the third vacuum pump 173b. Here, in order to facilitate understanding, only the piping configuration for any one of the plurality of inner suction portions 302 is shown.

  The number and arrangement of the first to third vacuum pumps 171b to 173b are not particularly limited. The 1st-3rd vacuum pumps 171b-173b should just be provided for every area | region where adsorption | suction pressure is controlled independently. For example, among the eight inner suction portions 302, the four inner suction portions 302 arranged in the 45 degree direction and the four inner suction portions 302 arranged in the 90 degree direction may be connected to different vacuum pumps. Good.

  Returning to FIG. 6, a plurality of strain forming sections 150 are arranged around the first holding section 140. The strain forming unit 150 includes a contact member 151 and a moving mechanism 152. The abutting member 151 is a member that abuts on the first substrate W1, and is formed of a resin member such as PEEK (Poly Ether Ether Ketone). Thereby, for example, metal contamination of the first substrate W1 can be suppressed.

  The moving mechanism 152 moves the contact member 151 between a position where it contacts the peripheral edge of the first substrate W1 and a position away from the peripheral edge of the first substrate W1. Specifically, the moving mechanism 152 includes a slider 152a connected to the contact member 151 at the tip, and an actuator 152b that moves the slider 152a along the horizontal direction, specifically, along the radial direction of the first substrate W1. With. The actuator 152b is fixed to the upper part of the main body 170, for example.

  The strain forming unit 150 is configured as described above, and the contact member 151 is moved from the radially outer side of the first substrate W1 toward the first substrate W1 by the moving mechanism 152, and the periphery of the first substrate W1. By pressing against the part, the peripheral part of the first substrate W1 is pressed radially inward. Accordingly, the strain forming unit 150 forms strain on the first substrate W1.

  Here, an example of the arrangement of the plurality of strain forming units 150 will be described with reference to FIG. FIG. 10 is a diagram illustrating an example of the arrangement of the plurality of strain forming units 150. In addition, in FIG. 10, the schematic diagram which looked at the some distortion formation part 150 from the downward direction is shown.

  As shown in FIG. 10, four strain forming units 150 are arranged around the first holding unit 140. The four strain forming parts 150 are arranged radially outward of the four first outer suction parts 311 among the plurality of outer suction parts 301. That is, the four strain forming units 150 are arranged in the 45 degree direction on the first substrate W1. The four strain forming portions 150 include four peripheral portions of the first substrate W1 positioned radially outward of the four outer suction portions 301, that is, four peripheral portions positioned in the 45-degree direction of the first substrate W1. The part is pressed inward in the radial direction.

  As described above, the main body 170 of the first holding unit 140 has a smaller diameter than the first substrate W1. That is, the first substrate W1 is sucked and held by the first holding unit 140 in a state of slightly protruding from the main body 170, and the strain forming unit 150 applies the portion protruding from the main body 170 of the first substrate W1. The contact member 151 is pressed.

  The front end portion of the contact member 151 is formed, for example, in a V shape in plan view, and each strain forming portion 150 presses the peripheral portion of the first substrate W1 at two points. Thereby, compared with the case where the peripheral part of the 1st board | substrate W1 is pressed at one point, it can suppress that a local load is applied to the peripheral part of the 1st board | substrate W1, for example. In addition, the shape of the front-end | tip part of the contact member 151 is not limited to V shape, For example, the circular arc shape along the shape of the peripheral part of the 1st board | substrate W1 may be sufficient.

  Here, four strain forming portions 150 are arranged around the first holding unit 140, but eight strain forming units 150 are arranged around the first holding unit 140 at intervals of 45 degrees. Also good. That is, four strain forming portions 150 that press the peripheral portion in the 45 degree direction of the first substrate W1 and four strain forming portions 150 that press the peripheral portion in the 90 degree direction of the first substrate W1 are provided. Also good.

  Returning to FIG. 6, the second holding unit 141 will be described. The second holding unit 141 includes a main body 200 having the same diameter as the second substrate W2 or a larger diameter than the second substrate W2. Here, the 2nd holding | maintenance part 141 which has a larger diameter than the 2nd board | substrate W2 is shown. The upper surface of the main body 200 is a facing surface that faces the lower surface (non-bonding surface W2n) of the second substrate W2.

  On the upper surface of the main body 200, a plurality of pins 201 that are in contact with the lower surface (non-bonding surface Wn2) of the second substrate W2 are provided. For example, the plurality of pins 201 have a diameter of 0.1 mm to 1 mm and a height of several tens to several hundreds of μm. The plurality of pins 201 are evenly arranged at intervals of 2 mm, for example.

  In addition, on the upper surface of the main body 200, lower ribs 202 are annularly provided outside the plurality of pins 201. The lower rib 202 is formed in an annular shape, and supports the outer periphery of the second substrate W2 over the entire periphery.

  The main body 200 has a plurality of lower suction ports 203. A plurality (three in this case) of the plurality of lower suction ports 203 are provided in the suction region surrounded by the lower rib 202. The plurality of lower suction ports 203 are connected to a suction device (not shown) such as a vacuum pump via a suction pipe (not shown).

  The second holding unit 141 decompresses the suction area by evacuating the suction area surrounded by the lower ribs 202 from the plurality of lower suction ports 203. As a result, the second substrate W2 placed in the suction region is sucked and held by the second holding unit 141.

  Since the lower rib 202 supports the outer peripheral portion of the lower surface of the second substrate W2 over the entire periphery, the second substrate W2 is appropriately evacuated to the outer peripheral portion. Thereby, the entire surface of the second substrate W2 can be sucked and held. Further, since the lower surface of the second substrate W2 is supported by the plurality of pins 201, the second substrate W2 is easily peeled off from the second holding part 141 when the vacuuming of the second substrate W2 is released.

  Next, a specific operation of the bonding system 1 according to the embodiment will be described with reference to FIGS. FIG. 11 is a flowchart showing a part of processing executed by the joining system 1 according to the embodiment. 12 and 13 are diagrams for explaining the operation of the joining process. Various processes shown in FIG. 13 are executed based on control by the control device 70.

  First, a cassette C1 containing a plurality of first substrates W1, a cassette C2 containing a plurality of second substrates W2, and an empty cassette C3 are placed on a predetermined placement plate 11 of the carry-in / out station 2. The Thereafter, the first substrate W1 in the cassette C1 is taken out by the transfer device 22 and transferred to the transition device 50 of the third processing block G3 of the processing station 3.

  Next, the first substrate W1 is transferred by the transfer device 61 to the surface modification device 30 of the first processing block G1. In the surface reforming apparatus 30, oxygen gas, which is a processing gas, is excited and turned into plasma and ionized under a predetermined reduced-pressure atmosphere. The oxygen ions are irradiated onto the bonding surface W1j of the first substrate W1, and the bonding surface W1j is subjected to plasma treatment. Thereby, the bonding surface W1j of the first substrate W1 is modified (step S101).

  Next, the first substrate W1 is transferred by the transfer device 61 to the surface hydrophilizing device 40 of the second processing block G2. In the surface hydrophilizing apparatus 40, pure water is supplied onto the first substrate W1 while rotating the first substrate W1 held by the spin chuck. Then, the supplied pure water diffuses on the bonding surface W1j of the first substrate W1, and a hydroxyl group (silanol group) adheres to the bonding surface W1j of the first substrate W1 modified by the surface modification device 30. The joint surface W1j is hydrophilized. Further, the bonding surface W1j of the first substrate W1 is cleaned with the pure water (step S102).

  Next, the first substrate W1 is transferred by the transfer device 61 to the bonding device 41 of the second processing block G2. The first substrate W <b> 1 carried into the bonding apparatus 41 is transported to the position adjustment mechanism 120 by the substrate transport mechanism 111 via the transition 110. Then, the horizontal orientation of the first substrate W1 is adjusted by the position adjustment mechanism 120 (step S103).

  Thereafter, the first substrate W <b> 1 is transferred from the position adjustment mechanism 120 to the holding arm 131 of the reversing mechanism 130. Subsequently, in the transfer area T1, the front and back surfaces of the first substrate W1 are reversed by reversing the holding arm 131 (step S104). That is, the bonding surface W1j of the first substrate W1 is directed downward.

  Thereafter, the holding arm 131 of the reversing mechanism 130 rotates and moves below the first holding unit 140. Then, the first substrate W <b> 1 is delivered from the reversing mechanism 130 to the first holding unit 140. In the first substrate W1, the non-joint surface W1n is sucked and held by the first holding portion 140 in a state where the notch portion N is directed in a predetermined direction, that is, a direction in which the second outer suction portion 312 is provided. (Step S105).

  In step S105, the first holding unit 140 holds and holds the first substrate W1 using all of the plurality of outer suction units 301 and the plurality of inner suction units 302.

  Subsequently, the control device 70 stops the first vacuum pump 171b and the second vacuum pump 172b, so that the plurality of outer suction portions 301 and the plurality of inner suction portions 302 among the plurality of outer suction portions 301 are sucked and held. Is released (step S106).

  Subsequently, the control device 70 controls the four strain forming units 150 to form strain on the first substrate W1 (step S107). Specifically, the control device 70 moves the contact member 151 disposed at a position away from the first substrate W1 toward the first substrate W1 and presses it against the peripheral edge of the first substrate W1. Thereby, each peripheral part in the 45 degree direction of the first substrate W1 is pressed radially inward by the contact member 151, and radially inward to each peripheral part in the 45 degree direction of the first substrate W1. A heading distortion is formed. For example, in order to suppress damage to the first substrate W1, the pressing force by the strain forming unit 150 is preferably 10 N or less.

  Here, in step S105, the suction holding of the first substrate W1 by the first outer suction unit 311 is released. For this reason, in step S106, it can suppress that formation of distortion is inhibited by the 1st outer side adsorption | suction part 311, and distortion can be formed in a wide area | region from the peripheral part to the radial direction of an outer peripheral part. The processes in steps S105 and S106 correspond to an example of a distortion forming process.

  Thereafter, the controller 70 restarts the suction holding by the plurality of outer suction units 301 by driving the first vacuum pump 171b and the second vacuum pump 172b (step S108). The outer periphery of the first substrate W <b> 1 is sucked and held by the four first outer suction portions 311, whereby the distortion formed on the first substrate W <b> 1 can be fixed by the suction force of the first outer suction portion 311. The process in step S108 corresponds to an example of a distortion fixing process. Thereafter, the control device 70 controls the strain forming unit 150 to retract the contact member 151 to a position away from the first substrate W1.

  Note that, here, all the suction holdings of the four first outer suction units 311 and the four second outer suction units 312 are released, but the control device 70 includes four of the plurality of outer suction units 301. Only the suction holding of the first outer suction portions 311 may be released.

  While the processes in steps S101 to S108 described above are performed on the first substrate W1, the process on the second substrate W2 is performed. First, the second substrate W <b> 2 in the cassette C <b> 2 is taken out by the transport device 22 and transported to the transition device 50 in the processing station 3.

  Next, the second substrate W2 is transferred to the surface modification device 30 by the transfer device 61, and the bonding surface W2j of the second substrate W2 is modified (step S109). The modification of the bonding surface W2j of the second substrate W2 in step S109 is the same as that in step S101 described above.

  Thereafter, the second substrate W2 is transferred to the surface hydrophilizing device 40 by the transfer device 61, and the bonding surface W2j of the second substrate W2 is hydrophilized and the bonding surface W2j is cleaned (step S110). Hydrophilization and cleaning of the bonding surface W2j of the second substrate W2 in step S110 are the same as in step S102 described above.

  Thereafter, the second substrate W <b> 2 is transferred to the bonding apparatus 41 by the transfer device 61. The second substrate W2 carried into the bonding apparatus 41 is transported to the position adjustment mechanism 120 by the substrate transport mechanism 111 via the transition 110. Then, the horizontal orientation of the second substrate W2 is adjusted by the position adjustment mechanism 120 (step S111).

  Thereafter, the second substrate W2 is transferred to the second holding unit 141 by the substrate transfer mechanism 111, and is sucked and held by the second holding unit 141 (step S112). The second substrate W2 has the non-bonding surface W2n on the second holding portion 141 in a state in which the notch portion N is oriented in a predetermined direction, specifically, in the same direction as the notch portion N of the first substrate W1. Adsorbed and held.

  Next, the horizontal position adjustment between the first substrate W1 held by the first holding unit 140 and the second substrate W2 held by the second holding unit 141 is performed (step S113).

  Next, the vertical position between the first substrate W1 held by the first holding unit 140 and the second substrate W2 held by the second holding unit 141 is adjusted (step S114). Specifically, the first moving unit 160 moves the second holding unit 141 vertically upward to bring the second substrate W2 closer to the first substrate W1. Thereby, the interval between the bonding surface W2j of the second substrate W2 and the bonding surface W1j of the first substrate W1 is adjusted to a predetermined distance, for example, 50 μm to 200 μm.

  Next, after releasing the suction and holding of the first substrate W1 by the plurality of inner suction portions 302 and the plurality of second outer suction portions 312 (step S115), the first substrate is lowered by lowering the pressing pin 191 of the striker 190. The center part of W1 is pressed down (step S116). Until the first substrate W1 is pushed down by the striker 190, the central portion of the first substrate W1 is sucked and held by the plurality of inner suction portions 302, so that the self-weight deflection (for example, about 1 μm) of the center portion of the first substrate W1. Can be suppressed.

  When the central portion of the first substrate W1 comes into contact with the central portion of the second substrate W2 and the central portion of the first substrate W1 and the central portion of the second substrate W2 are pressed with a predetermined force by the striker 190, they are pressed. Bonding starts between the central portion of the first substrate W1 and the central portion of the second substrate W2. That is, since the bonding surface W1j of the first substrate W1 and the bonding surface W2j of the second substrate W2 are modified in steps S101 and S109, respectively, first, van der Waals force (intermolecular force) is generated between the bonding surfaces W1j and W2j. ) Occurs, and the joint surfaces W1j and W2j are joined together. Further, since the bonding surface W1j of the first substrate W1 and the bonding surface W2j of the second substrate W2 are hydrophilized in steps S102 and S110, respectively, hydrophilic groups between the bonding surfaces W1j and W2j are hydrogen-bonded, and the bonding surface W1j. , W2j are firmly joined together. In this way, the junction region A (see FIG. 7) is formed.

  Thereafter, a bonding wave is generated between the first substrate W1 and the second substrate W2 in which the bonding region A expands from the center portion of the first substrate W1 and the second substrate W2 toward the outer peripheral portion (FIG. 12). reference).

  In the bonding apparatus 41 according to the present embodiment, among the plurality of outer adsorption portions 301 arranged in accordance with the anisotropy of the first substrate W1, the four fourth arrangements arranged in the 45 ° direction in which the bonding area A expands fastest. The first substrate W1 is held by suction using only the first outer suction part 311. In other words, the first substrate W1 is not sucked and held in the 90 ° direction in which the bonding area A expands most slowly.

  Thereby, compared with the case where the entire periphery of the outer edge of the first substrate W1 is sucked and held, the unevenness of the stress / strain distribution applied to the first substrate W1 can be reduced. As a result, the non-uniformity of the bonding wave is alleviated and the bonding region A expands in a state of being concentric. Thereby, the joining apparatus 41 which concerns on this embodiment can reduce the distortion (distortion) of the superposition | polymerization board | substrate T resulting from anisotropy.

  Thereafter, the suction holding of the first substrate W1 by the four first outer suction portions 311 is released (step S117). As a result, the outer peripheral portion in the 45-degree direction of the first substrate W1 that has been sucked and held by the four first outer suction portions 311 falls. As a result, as shown in FIG. 13, the bonding surface W1j of the first substrate W1 and the bonding surface W2j of the second substrate W2 come into contact with each other, and a superposed substrate T is formed.

  As described above, in the bonding apparatus 41 according to this embodiment, the first substrate W1 and the second substrate W2 are bonded to the outer peripheral portion of the first substrate W1 in the 45-degree direction by the four first outer suction portions 311. Adsorb and hold until just before. For this reason, in the region from the peripheral edge portion to the outer peripheral portion in the 45-degree direction of the first substrate W1, distortion in the radially outward direction is generated. As a result, the bonding accuracy of the first substrate W1 and the second substrate W2 may be reduced in the region from the peripheral edge to the outer periphery in the 45-degree direction of the first substrate W1.

  On the other hand, in the bonding apparatus 41 according to the present embodiment, a distortion inward in the radial direction is formed in advance with respect to the region of the outer peripheral portion from the peripheral portion in the 45 degree direction of the first substrate W1. As a result, the radially outward strain generated during joining can be offset by the previously formed radially inward strain. Therefore, according to the bonding apparatus 41 according to the present embodiment, it is possible to suppress distortion of the superposed substrate T, particularly distortion generated in the region from the peripheral portion to the outer peripheral portion in the 45 degree direction.

  The four strain forming portions 150 press the peripheral portion of the first substrate W1, and do not suck and hold the first substrate W1, so even if the strain forming portion 150 presses the first substrate W1. In addition, the flatness of the first holding unit 140 does not collapse. For this reason, for example, the bonding accuracy due to the flatness of the first holding part 140 being collapsed as compared with the case where the portion that holds the outer peripheral part of the first holding part 140 by suction is configured to be movable along the radial direction. Can be suppressed.

  Thereafter, the pressing pin 191 is raised to the first holding unit 140, and the suction holding of the second substrate W2 by the second holding unit 141 is released. Thereafter, the superposed substrate T is transported to the transition device 51 by the transport device 61 and then transported to the cassette C3 by the transport device 22 of the carry-in / out station 2. In this way, a series of joining processing is completed.

  As described above, the joining device 41 according to this embodiment includes the first holding unit 140, the second holding unit 141, and the plurality of strain forming units 150. The first holding unit 140 includes a plurality of outer suction units 301 arranged in the circumferential direction, and uses the plurality of outer suction units 301 to suck and hold the outer periphery of the first substrate W1. The second holding unit 141 holds the second substrate W2 by suction. The striker 190 presses the central portion of the first substrate W1 sucked and held by the first holding unit 140 to bring it into contact with the second substrate W2 sucked and held by the second holding unit 141. The plurality of strain forming portions 150 form strain on the first substrate W1 by pressing the peripheral portion of the first substrate W1 positioned radially outward of the plurality of outer suction portions 301 toward the radially inward direction. .

  A radially outward deformation that occurs when the first substrate W1 and the second substrate W2 are bonded together by previously forming a strain inward in the radial direction on the first substrate W1 using the plurality of strain forming portions 150. The distortion which goes to can be canceled. Therefore, according to the bonding apparatus 41 according to the present embodiment, distortion of the superposed substrate T that is a substrate after bonding can be suppressed.

  The first holding unit 140 includes a main body 170 that holds the outer periphery of the first substrate W1 by suction. The main body 170 has a smaller diameter than the first substrate W1. That is, the first substrate W1 is sucked and held by the first holding unit 140 in a state of slightly protruding from the main body 170. Therefore, the strain forming part 150 can press the peripheral part of the first substrate W1 protruding from the main body part 170 toward the inside in the radial direction.

  Further, the joining device 41 according to the present embodiment includes a control device 70 (an example of a control unit). The control device 70 executes a strain forming process, a strain fixing process, and a joining process. The strain forming process is a process of controlling the plurality of strain forming units 150 to form a strain on the first substrate W1. The strain fixing process is a process of controlling the first holding unit 140 to fix the strain formed on the first substrate W1 by the strain forming process by the suction force of the outer suction unit 301. In the bonding process, the strainer 190 is controlled in a state where the strain is formed on the first substrate W1, the center portion of the first substrate W1 is brought into contact with the second substrate W2, and the first substrate W1 and the second substrate W2 It is the process which joins.

  Thus, the strain formed on the first substrate W1 by the strain forming process is fixed by the strain fixing process. As a result, the strain forming unit 150 can be retreated to a place away from the first substrate W1, and therefore, when the first holding unit 140 and the second holding unit 141 are brought closer to each other in the bonding process, the strain forming unit 150 It will not get in the way.

  The first holding part 140 includes an inner suction part 302 provided radially inward from the plurality of outer suction parts 301. In the strain formation process, the control device 70 controls the first holding unit 140 and controls the plurality of strain forming units 150 in a state where the first substrate W1 is sucked and held by the inner suction unit 302. A strain is formed on one substrate W1.

  In this way, by holding the first substrate W1 by the inner suction portion 302, even if the suction holding of the first substrate W1 by the plurality of outer suction portions 301 is released, the first substrate W1 is prevented from falling. can do.

  The strain forming unit 150 includes a contact member 151 and a moving mechanism 152 that moves the contact member 151. The strain forming unit 150 then presses the contact member 151 against the peripheral portion of the first substrate W1 by moving the contact member 151 from the radially outer side of the first substrate W1 toward the first substrate W1. Then, the peripheral edge of the first substrate W1 is pressed inward in the radial direction.

  Thus, the strain forming unit 150 does not suck and hold the first substrate W1. For this reason, even if the first substrate W1 is pressed by the strain forming unit 150, the flatness of the first holding unit 140 is not lost. Therefore, for example, as compared with the case where the portion that holds the outer peripheral portion of the first holding unit 140 by suction is configured to be movable along the radial direction, the bonding accuracy due to the flatness of the first holding unit 140 is lost. The decrease can be suppressed.

  In addition, the plurality of outer adsorption portions 301 includes four first outer adsorption portions 311 arranged at intervals of 90 degrees, and four outer adsorption portions 301 arranged at 45 degrees in the circumferential direction with respect to the four first outer adsorption portions 311. A second outer suction portion 312. The plurality of strain forming portions 150 press the peripheral edge portion of the first substrate W1 positioned radially outward of the four first outer suction portions 311 toward the radially inner side.

  For example, of the four first outer suction portions 311 and the four second outer suction portions 312, only the peripheral edge portion of the first substrate W <b> 1 positioned radially outward of the four first outer suction portions 311 is bonded. In this case, there is a case where distortion occurs in the radially outward direction. In such a case, the first substrate W1 and the second substrate W2 are preliminarily formed in the peripheral edge portion of the first substrate W1 positioned radially outward of the four first outer suction portions 311. It is possible to cancel out the distortion in the radially outward direction that occurs when the two are bonded together.

  The first substrate W1 is a single crystal silicon wafer having a surface crystal direction of [100]. The four first outer adsorption portions 311 are 45 when the direction from the central portion of the first substrate W1 toward the [0-11] crystal direction parallel to the surface of the first substrate W1 is defined as 0 degree. Arranged at intervals of 90 degrees with respect to the direction of the degrees.

  For example, by performing the bonding process in a state where the first substrate W1 is sucked and held using only the four first outer suction portions 311 among the plurality of outer suction portions 301, the physical property anisotropy of the first substrate W1 is increased. The resulting distortion of the first substrate W1 can be suppressed. On the other hand, when the bonding process is performed in a state where the first substrate W1 is sucked and held using only the four first outer suction portions 311, the radially outward distortion in the peripheral portion in the 45-degree direction of the first substrate W1 is generated. Arise. On the other hand, in the bonding apparatus 41 according to the present embodiment, the four strain forming units 150 form a strain inward in the radial direction in advance in the peripheral portion in the 45-degree direction of the first substrate W <b> 1. It is possible to cancel out the radial outward distortion that sometimes occurs. Therefore, according to the bonding apparatus 41 according to the present embodiment, it is possible to suppress distortion of the superposed substrate T, particularly distortion generated in the region from the peripheral portion to the outer peripheral portion in the 45 degree direction.

  It should be thought that embodiment disclosed this time is an illustration and restrictive at no points. Indeed, the above-described embodiment can be embodied in various forms. The above embodiments may be omitted, replaced, and changed in various forms without departing from the scope and spirit of the appended claims.

  Here, a modified example of the above-described strain forming unit 150 will be described with reference to FIGS. FIG. 14 and FIG. 15 are schematic views showing the configuration of the strain forming section according to the first modification. FIGS. 16 and 17 are schematic views showing the configuration of the strain forming section according to the second modification.

  As illustrated in FIGS. 14 and 15, the strain forming unit 150A according to the first modification includes a contact member 151A and a moving mechanism 152A. The contact member 151A is, for example, an inverted L-shaped member, and includes a first portion 151Aa extending in the horizontal direction and a second portion 151Ab extending vertically downward from the tip of the first portion 151Aa. The moving mechanism 152A includes a rotation shaft portion 152Aa that extends in the vertical direction and rotatably supports the first portion 151Aa of the contact member 151A, and an actuator 152Ab that rotates the rotation shaft portion 152Aa around the vertical axis. In FIG. 15, the actuator 152Ab is omitted.

  The strain forming unit 150A according to the first modification is configured as described above, and the contact member 151A is moved to the first substrate W1 by rotating the contact member 151A around the vertical axis by the moving mechanism 152A. Move from the outside in the radial direction toward the first substrate W1. As a result, the second portion 151Ab of the contact member 151A presses the peripheral edge of the first substrate W1, thereby forming a distortion inward in the radial direction on the peripheral edge of the first substrate W1.

  In the example described above, the case where the main body 170 of the first holding unit 140 has a smaller diameter than the first substrate W1 and the first substrate W1 protrudes from the main body 170 over the entire circumference has been described. However, the present invention is not limited to this, and the main body of the first holding unit may have the same diameter as the first substrate W1 or a larger diameter than the first substrate W1.

  In this case, for example, as shown in FIGS. 16 and 17, the main body portion 170B of the first holding portion 140B only needs to have a cutout portion 148 in which the main body portion 170B is cut from the peripheral edge portion to the outer peripheral portion. The cutout portions 148 are provided at the peripheral portions (four locations) in the 45-degree direction of the first substrate W1. Or the notch part 148 is provided in the peripheral part (8 places) in the 45 degree direction and 90 degree direction of the 1st board | substrate W1.

  The strain forming unit 150B according to the second modification includes a contact member 151B and a moving mechanism 152B. The contact member 151 </ b> B is, for example, a rod-shaped member, and is disposed in the notch 148. The moving mechanism 152B includes a rotation shaft portion 152Ba that extends in the horizontal direction and rotatably supports the contact member 151B, and an actuator 152Bb that rotates the rotation shaft portion 152Ba around the axis. In FIG. 17, the actuator 152Bb is omitted.

  The strain forming portion 150B according to the second modification is configured as described above, and the contact member 151B is rotated around the horizontal axis by the moving mechanism 152B, thereby bringing the contact member 151B into the first substrate W1. Move from the outside in the radial direction toward the first substrate W1. Accordingly, the contact member 151B presses the peripheral edge portion of the first substrate W1, so that a distortion inward in the radial direction can be formed in the peripheral edge portion of the first substrate W1.

  Note that a strain forming unit 150 (see FIG. 6) or a strain forming unit 150A (see FIG. 14) is arranged around the first holding unit 140B according to the second modification instead of the strain forming unit 150B. Also good.

  In the above-described embodiment, an example in which the first holding unit 140 includes the four first outer suction units 311 and the four second outer suction units 312 as the plurality of outer suction units 301 has been described. The configuration of the 1 holding unit 140 is not limited to the above example. For example, the first holding unit may include only four first outer suction units 311 among the plurality of outer suction units 301. In the above-described embodiment, an example in which the first holding unit 140 includes a plurality of inner suction units 302 has been described. However, the first holding unit includes a single inner suction unit connected in a ring shape. It may be.

  In the above-described embodiment, the example in which the first holding unit 140 vacuum-sucks the first substrate W1 has been described. However, the first holding unit may electrostatically suction the first substrate W1.

  In the above-described embodiment, the example in which the plurality of strain forming units 150 are arranged around the first holding unit 140 has been described. However, the plurality of strain forming units 150 are added to the first holding unit 140. It may also be arranged around the second holding part 141.

W1 1st board | substrate W2 2nd board | substrate 1 Joining system 41 Joining apparatus 140 1st holding | maintenance part 141 2nd holding | maintenance part 151 Strain forming part 151 Contact member 152 Moving mechanism 190 Striker 301 Outer adsorption part 302 Inner adsorption part 311 First outer adsorption Part 312 2nd outer side adsorption part

Claims (8)

A first holding part that has a plurality of outer suction parts arranged along the circumferential direction, and sucks and holds the outer peripheral part of the first substrate using the plurality of outer suction parts;
A second holding unit for holding the second substrate by suction;
A striker that presses the central portion of the first substrate sucked and held by the first holding portion to contact the second substrate sucked and held by the second holding portion;
A plurality of strain forming portions for forming a strain on the first substrate by pressing a peripheral edge portion of the first substrate located radially outward of the plurality of outer suction portions toward the radially inward direction. , Bonding equipment. The first holding part is
A main body for sucking and holding the outer periphery of the first substrate;
The main body is
The bonding apparatus according to claim 1, wherein the bonding apparatus has a diameter smaller than that of the first substrate. A strain forming process for controlling the plurality of strain forming portions to form strain on the first substrate, and the strain formed on the first substrate by the strain forming processing by controlling the first holding portion. And a strain fixing process for fixing the outer substrate by the suction force of the outer suction portion, and the striker is controlled in a state in which the strain is formed on the first substrate, and the central portion of the first substrate is placed on the second substrate. The bonding apparatus according to claim 1, further comprising: a control unit that performs a bonding process of bringing the first substrate and the second substrate into contact with each other. The first holding part is
An inner suction part provided radially inward from the plurality of outer suction parts,
The controller is
In the strain forming process, the first holding unit is controlled and the first substrate is sucked and held by the inner suction unit, and the plurality of strain forming units are controlled to strain the first substrate. The joining apparatus according to claim 3, which is formed. The strain forming part is
A contact member;
A moving mechanism for moving the contact member,
The peripheral portion of the first substrate is pressed against the peripheral portion of the first substrate by moving the contact member from the radially outer side of the first substrate toward the first substrate by the moving mechanism. The joining device according to any one of claims 1 to 4, which presses radially inward. The plurality of outer adsorption portions are:
Four first outer suction portions arranged at intervals of 90 degrees;
Four second outer suction portions disposed 45 degrees apart in the circumferential direction with respect to the four first outer suction portions,
The plurality of strain forming portions are
6. The bonding apparatus according to claim 1, wherein a peripheral portion of the first substrate located radially outward of the four first outer suction portions is pressed radially inward. 7. The first substrate is a single crystal silicon wafer having a surface crystal direction of [100].
The four first outer adsorption portions are:
When the direction from the center of the first substrate toward the [0-11] crystal direction parallel to the surface of the first substrate is defined as 0 degree, the first substrate is arranged at 90 degree intervals with respect to the 45 degree direction. The bonding apparatus according to claim 6. A first suction holding step of sucking and holding the outer peripheral portion of the first substrate using the plurality of outer suction portions of the first holding portion having a plurality of outer suction portions arranged along the circumferential direction;
A strain forming step of forming strain on the first substrate by pressing a peripheral portion of the first substrate located radially outward of the plurality of outer suction portions toward the radially inward;
A second suction holding step for sucking and holding the second substrate using a second holding part for sucking and holding the second substrate;
And a contact step of pressing the central portion of the first substrate sucked and held by the first holding portion to contact the second substrate sucked and held by the second holding portion.

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