JP2019175957A - Cvd deposition device and cvd deposition method - Google Patents

Abstract

To provide a CVD deposition device and a CVD deposition method ensuring production of deposition products at a short time interval.SOLUTION: A CVD deposition device 1 includes multiple reaction vessels 10a, 10b, 10c in which a substrate S is received, respectively. In the multiple reaction vessels 10a, 10b, 10c, deposition processing including temperature rising process, deposition process and cooling process is executed in parallel with time difference. While the temperature rising process is executed in one reaction vessel 10a, the cooling process is executed in another reaction vessel 10b, and the deposition process is executed in yet another reaction vessel 10c. Since the deposition process is executed in parallel with time difference in the multiple reaction vessels 10a, 10b, 10c, a deposition product can be obtained at a short time interval.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a CVD film forming apparatus and a CVD film forming method. More specifically, the present invention relates to an apparatus and method for forming a film on a substrate by a chemical vapor deposition (CVD) method (hereinafter referred to as “CVD method”).

  In recent years, silicon carbide (SiC) has attracted attention as a semiconductor for power devices. Silicon carbide crystals can be produced by a CVD method. The manufacture of silicon carbide by the CVD method is generally performed according to the following procedure. First, a substrate is carried into the reaction container. Next, the substrate is heated to a predetermined temperature. Next, a source gas is supplied into the reaction vessel, and a silicon carbide thin film is formed on the surface of the substrate. Next, the substrate is cooled to about room temperature. Thereafter, the film-formed product (film-formed substrate) is unloaded from the reaction container. If a plurality of substrates are accommodated in the reaction vessel, a plurality of film-formed products can be obtained at a time by batch processing including the above steps.

  When silicon carbide is formed by a CVD method, it is common to heat the substrate to an extremely high temperature of about 1,500 ° C. (Non-patent Document 1). Since the substrate is heated to an extremely high temperature, it takes a relatively long time to heat and cool the substrate.

Suemitsu Satoshi, Nishio Koji, Motoshima Seiji, “Silicon Carbide Film Formation Conditions by Chemical Vapor Deposition Using SiCl 4 —CH 4 —H 2 Type Materials”, Journal of the Japan Institute of Metals, Vol. 63, No. 7 (1999) ), P. 882-887

  If a long time is required for heating and cooling, the time required for one batch process becomes longer. In the case of continuous operation in which batch processing is continuously repeated, the time interval for obtaining a film-formed product becomes long. After the film-formed product is unloaded from the reaction vessel, post-processing such as polishing the silicon carbide film is performed. When the time interval for obtaining a film-formed product is long, the continuity between the film-forming process and the post-process is impaired, and the working efficiency is lowered.

  In view of the above circumstances, an object of the present invention is to provide a CVD film forming apparatus and a CVD film forming method capable of obtaining a film-formed product at short time intervals.

A CVD film-forming apparatus according to a first aspect of the present invention includes a plurality of reaction containers in which a substrate to be formed is accommodated, and in the plurality of reaction containers, a temperature raising step for heating the substrate, and film formation for forming a film on the substrate And a film forming process under the same conditions including a cooling process for cooling the substrate are performed in parallel with a time difference, and the temperature raising process is performed in one reaction container among the plurality of reaction containers. In the meantime, the cooling step is performed in another reaction vessel, and the film forming step is further performed in one or more other reaction vessels.
A CVD film forming apparatus according to a second invention is the CVD film forming apparatus according to the first invention, wherein a source gas supply source for supplying a source gas used in the film forming step, and the source gas from the source gas supply source are supplied to the plurality of reaction vessels. A source gas supply pipe that selectively supplies one or a plurality of reaction vessels in which the film forming step is performed.
According to a third aspect of the present invention, there is provided a CVD film forming apparatus according to the first or second aspect of the present invention, wherein a decompression device that decompresses the interior of the plurality of reaction vessels, and an exhaust pipe that selectively connects the decompression device and the plurality of reaction vessels. And.
According to a fourth aspect of the present invention, in the first, second or third aspect of the present invention, each of the plurality of reaction vessels is provided with a heater for heating the substrate to 1300 ° C. or higher by a hot wall method. It is characterized by.
A CVD film-forming apparatus according to a fifth invention is characterized in that, in the first, second, third, or fourth invention, silicon carbide is formed on the substrate.
In the CVD film forming method of the sixth invention, in a plurality of reaction vessels in which a substrate to be formed is accommodated, a temperature raising step for heating the substrate, a film forming step for forming a film on the substrate, and cooling the substrate In performing the film forming process under the same conditions including the cooling process in parallel with a time difference, while the temperature raising process is being performed in one of the plurality of reaction containers, The cooling step is performed in the reaction vessel, and the film forming step is further performed in one or more other reaction vessels.
According to a seventh aspect of the present invention, there is provided the CVD film forming method according to the sixth aspect, wherein the source gas from the source gas supply source shared by the plurality of reaction vessels is used as the film forming step in the plurality of reaction vessels. Alternatively, it is characterized by being selectively supplied to a plurality of reaction vessels.
The CVD film forming method of the eighth invention is characterized in that, in the sixth or seventh invention, the inside of the plurality of reaction vessels is selectively decompressed by a decompression device shared by the plurality of reaction vessels.
The CVD film forming method of the ninth invention is characterized in that, in the sixth, seventh or eighth invention, the substrate is heated to 1,300 ° C. or higher by a hot wall method in the temperature raising step.
A CVD film forming method according to a tenth aspect of the invention is characterized in that, in the sixth, seventh, eighth or ninth invention, silicon carbide is formed on the substrate.

According to the first invention, since the film forming processes are performed in parallel in a plurality of reaction vessels with a time difference, film forming products can be obtained at short time intervals.
According to the second invention, since the source gas supply source is shared by the plurality of reaction vessels, the equipment cost of the CVD film forming apparatus can be reduced.
According to the third invention, since the decompression apparatus is shared by the plurality of reaction vessels, the equipment cost of the CVD film forming apparatus can be reduced.
According to the fourth and fifth inventions, even if the temperature raising step and the cooling step require a long time, film-formed products can be obtained at short time intervals.
According to the sixth aspect of the invention, since the film forming processes are executed in parallel in a plurality of reaction vessels with a time difference, film forming products can be obtained at short time intervals.
According to the seventh aspect, since the source gas supply source is shared by the plurality of reaction vessels, the equipment cost of the CVD film forming apparatus can be reduced.
According to the eighth invention, since the decompression device is shared by the plurality of reaction vessels, the equipment cost of the CVD film forming apparatus can be reduced.
According to the ninth and tenth inventions, a film-formed product can be obtained at short time intervals even if the temperature raising step and the cooling step require a long time.

It is explanatory drawing of the CVD film-forming apparatus which concerns on 1st Embodiment of this invention. It is a timing chart of the film-forming process in 1st Embodiment. It is explanatory drawing of the CVD film-forming apparatus which concerns on 2nd Embodiment of this invention. It is explanatory drawing of the CVD film-forming apparatus which concerns on 3rd Embodiment of this invention. It is a timing chart of the film-forming process in 3rd Embodiment.

Next, an embodiment of the present invention will be described with reference to the drawings.
[First Embodiment]
(CVD deposition system)
As shown in FIG. 1, the CVD film-forming apparatus 1 which concerns on 1st Embodiment of this invention is equipped with three reaction container 10a, 10b, 10c. Hereinafter, each of the three reaction vessels 10a, 10b, and 10c is referred to as a first reaction vessel 10a, a second reaction vessel 10b, and a third reaction vessel 10c.

  A plurality of substrates S are accommodated in each reaction vessel 10a, 10b, 10c. The substrate S is not particularly limited as long as it is a film formation target member. When silicon carbide is formed by thermal CVD, the substrate S needs to be heated to about 1,500 ° C., and therefore, a material that can withstand high temperatures such as carbon is used as the substrate S. Thermal CVD means CVD that causes a chemical reaction with thermal energy.

  Each reaction vessel 10a, 10b, 10c is provided with a heater 11 for heating the substrate S. When the hot wall method is employed, the heater 11 is disposed outside the reaction vessels 10a, 10b, and 10c. The substrate S is heated by transferring the heat of the heater 11 to the substrate S through the side walls of the reaction vessels 10a, 10b, and 10c. When the cold wall method is employed, the heater 11 is disposed inside the reaction vessels 10a, 10b, and 10c. In this case, the substrate S is directly heated by the heater 11.

The CVD film forming apparatus 1 has a gas supply system 20 that supplies a source gas and a carrier gas to each of the reaction vessels 10a, 10b, and 10c. The source gas is a gas containing a film component. In the case of forming silicon carbide, SiCl ₄ and SiH _{4 as} Si raw materials, CH ₄ , C ₂ H ₂ , C ₃ H ₄ as Si raw materials, SiCl ₄ -CCl ₄ system containing both Si and C, SiCl ₄ -Hydrocarbon, SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ , CH ₃ SiCl _{3 and the} like to which HCl is added to improve the reaction rate are used as the source gas. Moreover, hydrogen etc. are used as carrier gas.

The gas supply system 20 of this embodiment includes a first source gas supply source 21, a second source gas supply source 22, and a carrier gas supply source 23. The first source gas supply source 21 and the second source gas supply source 22 supply different types of source gases. Hereinafter, the source gas supplied from the first source gas supply source 21 is referred to as a first source gas, and the source gas supplied from the second source gas supply source 22 is referred to as a second source gas. For example, the first source gas is SiCl ₄ gas and the second source gas is CH ₄ gas. The first source gas supply source 21, the second source gas supply source 22, and the carrier gas supply source 23 are, for example, gas cylinders.

  A first source gas supply pipe 31 is connected to the first source gas supply source 21. The first source gas supply pipe 31 branches into three on the way and is connected to the three reaction vessels 10a, 10b, and 10c. The three branch pipes of the first source gas supply pipe 31 are provided with on-off valves 31a, 31b, and 31c, respectively. By opening and closing the on-off valve 31a, the supply and stop of the first source gas to the first reaction vessel 10a can be switched. Similarly, the supply and stop of the first raw material gas to the second reaction vessel 10b can be switched by opening and closing the on-off valve 31b. By opening and closing the on-off valve 31c, the supply and stop of the first source gas to the third reaction vessel 10c can be switched. That is, the first source gas can be selectively supplied to the three reaction vessels 10a, 10b, and 10c by individually opening and closing the on-off valves 31a, 31b, and 31c.

  A first flow rate control mechanism 34 that adjusts the flow rate of the first source gas is provided upstream of the branch portion of the first source gas supply pipe 31. As the first flow rate control mechanism 34, for example, a mass flow controller is used. The first flow rate control mechanism 34 can control the supply amount of the first source gas to the reaction vessels 10a, 10b, and 10c.

  A second source gas supply pipe 32 is connected to the second source gas supply source 22. The second source gas supply pipe 32 branches into three on the way and is connected to the three reaction vessels 10a, 10b, and 10c. The three branch pipes of the second source gas supply pipe 32 are provided with on-off valves 32a, 32b and 32c, respectively. The second source gas can be selectively supplied to the three reaction vessels 10a, 10b, and 10c by individually opening and closing the on-off valves 32a, 32b, and 32c.

  A second flow rate control mechanism 35 is provided upstream of the branch portion of the second source gas supply pipe 32. The second flow rate control mechanism 35 can control the supply amount of the second source gas to the reaction vessels 10a, 10b, and 10c.

  A carrier gas supply pipe 33 is connected to the carrier gas supply source 23. The carrier gas supply pipe 33 is branched into three on the way and connected to the three reaction vessels 10a, 10b, and 10c. The three branch pipes of the carrier gas supply pipe 33 are provided with on-off valves 33a, 33b, and 33c, respectively. By individually opening and closing the on-off valves 33a, 33b, and 33c, the carrier gas can be selectively supplied to the three reaction vessels 10a, 10b, and 10c.

  A third flow rate control mechanism 36 is provided on the upstream side of the branch portion of the carrier gas supply pipe 33. The third flow rate control mechanism 36 can control the amount of carrier gas supplied to the reaction vessels 10a, 10b, 10c.

  Each of the first source gas supply source 21, the second source gas supply source 22, and the carrier gas supply source 23 is shared by the three reaction vessels 10a, 10b, and 10c. Therefore, compared with the case where a gas supply source is provided in each of the three reaction vessels 10a, 10b, and 10c, the gas supply system 20 can be simplified and the equipment cost of the CVD film forming apparatus 1 can be reduced.

  When only one type of source gas is used, the second source gas supply source 22 and the second source gas supply pipe 32 may not be provided.

  The CVD film forming apparatus 1 has an exhaust system 40 that depressurizes the inside of each reaction vessel 10a, 10b, 10c. When performing low pressure CVD, it is necessary to decompress the inside of reaction container 10a, 10b, 10c. Note that low-pressure CVD means CVD in a low-pressure atmosphere lower than atmospheric pressure.

  The exhaust system 40 includes a decompression device 41 that decompresses the inside of the reaction vessels 10a, 10b, and 10c. A vacuum pump is used as the decompression device 41. The decompression device 41 may be configured by combining a plurality of vacuum pumps. For example, a mechanical booster pump and a dry pump may be combined.

  An exhaust pipe 42 is connected to the suction side of the decompression device 41. The exhaust pipe 42 branches into three on the way and is connected to the three reaction vessels 10a, 10b, 10c. The three branch pipes of the exhaust pipe 42 are respectively provided with pressure control valves 42a, 42b, and 42c. By individually opening and closing the pressure control valves 42a, 42b, and 42c, the decompression device 41 and the three reaction vessels 10a, 10b, and 10c can be selectively connected.

  Each reaction vessel 10a, 10b, 10c is provided with a vacuum gauge 12. By adjusting the opening degree of the pressure control valves 42a, 42b, 42c based on the measured value of the vacuum gauge 12, the inside of the reaction vessels 10a, 10b, 10c can be adjusted to a desired pressure.

  The decompression device 41 is shared by the three reaction vessels 10a, 10b, and 10c. Therefore, the exhaust system 40 can be simplified and the equipment cost of the CVD film forming apparatus 1 can be reduced as compared with the case where a decompression device is provided in each of the three reaction vessels 10a, 10b, and 10c.

(CVD deposition method)
Next, a CVD film forming method using the CVD film forming apparatus 1 will be described.
The film formation process by the thermal CVD method includes three steps of a temperature raising step, a film formation step, and a cooling step. The temperature raising step is a step of heating the substrate S to a predetermined temperature. The film forming process is a process of forming a film on the substrate S. The cooling process is a process of cooling the substrate S. By performing the temperature raising step, the film forming step, and the cooling step in this order, the film can be formed on the substrate S.

  Since a rapid temperature change in the temperature raising process causes damage to the substrate S, the temperature rise is performed slowly over time. Therefore, when the substrate S is heated to 1,300 ° C. or higher by the hot wall method, a relatively long time is required for the temperature raising step. For example, when silicon carbide is formed on the substrate S, the substrate S is generally heated to about 1,500 ° C. In this case, the temperature raising process takes about 24 hours.

  In the cooling step, if the substrate S is forcibly cooled or opened to the atmosphere with a high temperature, cracks may occur in the substrate S and the film due to a rapid temperature change. Therefore, it is common to naturally cool the substrate S to 100 ° C. or less with the heater 11 turned off. Therefore, when the substrate S is heated to an extremely high temperature of 1,300 ° C. or higher, the cooling process also takes a relatively long time, for example, about 24 hours.

  If it takes about 24 hours for the film forming process, the entire film forming process takes about 3 days. However, in this case, the time required for each of the temperature raising step, the film forming step, and the cooling step is substantially the same. Therefore, in the present embodiment, the film formation process is performed in parallel in the three reaction vessels 10a, 10b, and 10c while being shifted one step at a time.

  Specifically, as shown in FIG. 2, in the first reaction vessel 10a, one process film forming process in which the heating step HS, the film forming step DS, and the cooling step CS are sequentially performed in this order is repeatedly performed. Also in the second and third reaction vessels 10b and 10c, the film forming process is continuously repeated.

  Immediately before the temperature raising step HS, the substrate S is carried into the reaction vessels 10a, 10b, and 10c and the reaction vessels 10a, 10b, and 10c are depressurized. Immediately after the cooling step CS, the reaction vessels 10a, 10b, and 10c are pressurized to atmospheric pressure, and the film-formed product (deposited substrate S) is removed from the reaction vessels 10a, 10b, and 10c. That is, pressure increase, carry-out, carry-in, and pressure reduction are performed in this order between the end of one film formation process and the start of the subsequent one film formation process.

  The film forming processes performed in the three reaction vessels 10a, 10b, and 10c are under the same conditions. Here, the same condition means that the material of the substrate S, the film forming material, and the temperature of the substrate S at the time of film formation are the same within a range of errors allowed in product management. Since the film forming process is performed under the same conditions, the three reaction vessels 10a, 10b, and 10c have the same range of errors that allow the time required for the heating process HS, the film forming process DS, and the cooling process CS. .

  The film forming processes in the three reaction vessels 10a, 10b, and 10c are executed in parallel with a time difference. After the temperature raising step HS in the first reaction vessel 10a is completed, the temperature raising step HS is started in the second reaction vessel 10b. After the temperature raising step HS in the second reaction vessel 10b is completed, the temperature raising step HS is started in the third reaction vessel 10c.

  Similarly, after the film formation process DS in the first reaction container 10a is completed, the film formation process DS is started in the second reaction container 10b. After the film formation process DS in the second reaction container 10b is completed, the film formation process DS is started in the third reaction container 10c. After the cooling step CS in the first reaction vessel 10a is completed, the cooling step CS is started in the second reaction vessel 10b. After the cooling step CS in the second reaction vessel 10b is completed, the cooling step CS is started in the third reaction vessel 10c.

  That is, while the temperature raising step HS is being executed in one reaction vessel 10a among the three reaction vessels 10a, 10b, 10c, the cooling step CS is executed in the other reaction vessel 10b, The film formation process DS is performed in the reaction container 10c.

  In other words, the temperature raising step HS is always performed in any one of the three reaction vessels 10a, 10b, 10c. The film forming process DS is always performed in any one of the three reaction vessels 10a, 10b, and 10c. The cooling step CS is always performed in any one of the three reaction vessels 10a, 10b, 10c.

  The source gas is used only in the film forming process DS. Therefore, the source gas is selectively supplied to one reaction vessel 10a, 10b, 10c in which the film forming process DS is performed among the three reaction vessels 10a, 10b, 10c.

  The film forming process DS is always performed only in any one of the reaction vessels 10a, 10b, and 10c. Therefore, the gas supply system 20 only needs to have a capability of supplying a raw material gas to one reaction vessel 10a, 10b, 10c. Therefore, the equipment cost of the gas supply system 20 can be reduced.

  The exhaust system 40 selectively depressurizes the inside of the three reaction vessels 10a, 10b, and 10c. Specifically, in each of the reaction vessels 10a, 10b, and 10c, the pressure is reduced immediately before the temperature raising step HS, and the pressure is increased to atmospheric pressure immediately after the cooling step CS. The reduced pressure state is maintained during the temperature raising process HS, the film forming process DS, and the cooling process CS.

  According to the present embodiment, the film forming process is performed in parallel in the three reaction vessels 10a, 10b, and 10c with a time difference corresponding to one process. Therefore, a film-formed product can be obtained at a short time interval for each process. Since the time interval for obtaining the film-formed product is short, the continuity between the film-forming treatment and the post-treatment can be maintained, and the working efficiency is improved.

  Moreover, compared with the apparatus which has only one reaction container, the capacity | capacitance of each reaction container 10a, 10b, 10c can be made into 1/3, maintaining the production amount per unit time. The smaller the reaction vessels 10a, 10b, 10c, the easier it is to make the distribution of the source gas uniform and the temperature easier. Therefore, the quality of the film-formed product can be improved. In addition, the members disposed inside the reaction vessels 10a, 10b, and 10c are often disposable because film components adhere to them. A disposable inner chamber may be used to protect the inner walls of the reaction vessels 10a, 10b, 10c. If reaction container 10a, 10b, 10c is small, a disposable member can also be made small and replacement | exchange operation | work will become easy.

[Second Embodiment]
Next, a CVD film forming apparatus 2 according to a second embodiment of the present invention will be described with reference to FIG.
The CVD film forming apparatus 2 of the present embodiment is obtained by changing the configuration of the gas supply system 20 in the CVD film forming apparatus 1 of the first embodiment. Since the rest of the configuration is the same as in the first embodiment, the same reference numerals are assigned to the same members, and descriptions thereof are omitted.

  The gas supply system 20 of this embodiment includes a first source gas supply source 21, a second source gas supply source 22, and a carrier gas supply source 23. Further, the gas supply system 20 has a source gas supply pipe 37.

  The source gas supply pipe 37 is branched into three on the upstream side, and is connected to the first source gas supply source 21, the second source gas supply source 22, and the carrier gas supply source 23. The source gas supply pipe 37 is branched into three on the downstream side and connected to the three reaction vessels 10a, 10b, and 10c. Three branch pipes on the upstream side of the source gas supply pipe 37 are provided with first, second, and third flow rate control mechanisms 34, 35, and 36. Three branch pipes on the downstream side of the source gas supply pipe 37 are provided with on-off valves 37a, 37b, and 37c, respectively.

  The first source gas, the second source gas, and the carrier gas are mixed in the source gas supply pipe 37 and then supplied to the reaction vessels 10a, 10b, and 10c. Moreover, the mixed gas can be selectively supplied to the three reaction vessels 10a, 10b, and 10c by individually opening and closing the on-off valves 37a, 37b, and 37c.

  The supply source of the first source gas, the second source gas, and the carrier gas can be switched simultaneously by simply opening and closing the on-off valves 37a, 37b, and 37c. Therefore, the gas control is simple.

[Third Embodiment]
Next, a CVD film forming apparatus 3 according to a third embodiment of the present invention will be described.
(CVD deposition system)
As shown in FIG. 4, the CVD film forming apparatus 3 of the present embodiment includes four reaction vessels 10a, 10b, 10c, and 10d. Hereinafter, each of the four reaction vessels 10a, 10b, 10c, and 10d is referred to as a first reaction vessel 10a, a second reaction vessel 10b, a third reaction vessel 10c, and a fourth reaction vessel 10d.

  The first source gas supply pipe 31 branches into four on the way and is connected to the four reaction vessels 10a, 10b, 10c, and 10d. The four branch pipes of the first source gas supply pipe 31 are provided with on / off valves 31a, 31b, 31c, and 31d, respectively. The first source gas can be selectively supplied to the four reaction vessels 10a, 10b, 10c, and 10d by individually opening and closing the on-off valves 31a, 31b, 31c, and 31d.

  The second source gas supply pipe 32 branches into four on the way and is connected to the four reaction vessels 10a, 10b, 10c, and 10d. The four branch pipes of the second source gas supply pipe 32 are provided with on-off valves 32a, 32b, 32c, and 32d, respectively. By separately opening and closing the on-off valves 32a, 32b, 32c, and 32d, the second source gas can be selectively supplied to the four reaction vessels 10a, 10b, 10c, and 10d.

  The carrier gas supply pipe 33 branches into four on the way and is connected to the four reaction vessels 10a, 10b, 10c, and 10d. The four branch pipes of the carrier gas supply pipe 33 are provided with on / off valves 33a, 33b, 33c, and 33d, respectively. By individually opening and closing the on-off valves 33a, 33b, 33c, and 33d, the carrier gas can be selectively supplied to the four reaction vessels 10a, 10b, 10c, and 10d.

  As in the second embodiment, the common source gas supply pipe 37 may be used for the first source gas, the second source gas, and the carrier gas. In this case, the source gas supply pipe 37 is branched into four on the downstream side and connected to the four reaction vessels 10a, 10b, 10c, and 10d. By individually opening and closing the on-off valves provided in the four branch pipes on the downstream side of the source gas supply pipe 37, the source gas can be selectively supplied to the four reaction vessels 10a, 10b, 10c, and 10d.

  The exhaust pipe 42 of the exhaust system 40 branches into four on the way and is connected to the four reaction vessels 10a, 10b, 10c, and 10d. Pressure control valves 42a, 42b, 42c, and 42d are provided in the four branch pipes of the exhaust pipe 42, respectively. By individually adjusting the openings of the pressure control valves 42a, 42b, 42c, and 42d, the insides of the reaction vessels 10a, 10b, 10c, and 10d can be adjusted to desired pressures, respectively.

(CVD deposition method)
Next, a CVD film forming method using the CVD film forming apparatus 3 will be described.
As shown in FIG. 5, the film formation process is continuously repeated in each of the four reaction vessels 10a, 10b, 10c, and 10d. Here, the film forming process DS of the present embodiment takes about twice as long as the time required for each of the temperature raising process HS and the cooling process CS.

  The film forming processes in the four reaction vessels 10a, 10b, 10c, and 10d are executed in parallel with a time difference. After the temperature raising step HS in the first reaction vessel 10a is completed, the temperature raising step HS is started in the second reaction vessel 10b. After the temperature raising step HS in the second reaction vessel 10b is completed, the temperature raising step HS is started in the third reaction vessel 10c. After the temperature raising step HS in the third reaction vessel 10c is completed, the temperature raising step HS is started in the fourth reaction vessel 10d.

  In the middle of the film forming process DS in the first reaction container 10a, the film forming process DS is started in the second reaction container 10b. In the middle of the film forming process DS in the second reaction container 10b, the film forming process DS is started in the third reaction container 10c. In the middle of the film forming process DS in the third reaction container 10c, the film forming process DS is started in the fourth reaction container 10d. After the cooling step CS in the first reaction vessel 10a is completed, the cooling step CS is started in the second reaction vessel 10b. After the cooling step CS in the second reaction vessel 10b is completed, the cooling step CS is started in the third reaction vessel 10c. After the cooling step CS in the third reaction vessel 10c is completed, the cooling step CS is started in the fourth reaction vessel 10d.

  That is, while the temperature raising step HS is being executed in one reaction vessel 10a among the four reaction vessels 10a, 10b, 10c, 10d, the cooling step CS is executed in the other reaction vessel 10b, and the other The film formation process DS is performed in the second reaction vessels 10c and 10d.

  In other words, the temperature raising step HS is always performed in any one of the four reaction vessels 10a, 10b, 10c, and 10d. The film forming process DS is always performed in any two of the four reaction vessels 10a, 10b, 10c, and 10d. The cooling step CS is always performed in any one of the four reaction vessels 10a, 10b, 10c, and 10d.

  The film forming process DS is always executed only in any two reaction vessels 10a, 10b, 10c, and 10d. Therefore, the gas supply system 20 only needs to have a capability of supplying a raw material gas to the two reaction vessels 10a, 10b, 10c, and 10d. Therefore, the equipment cost of the gas supply system 20 can be reduced.

  As in the present embodiment, when the film formation process DS requires a longer time than the temperature raising process HS and the cooling process CS, the number of reaction vessels 10a, 10b, 10c, and 10d may be increased. By using a plurality of reaction vessels 10a, 10b, 10c, and 10d that simultaneously perform the film forming process DS, the film forming process can be executed in parallel while being shifted by the time required for the temperature raising process HS or the cooling process CS. Thereby, a film-formed product is obtained at short time intervals.

1, 2, 3 CVD film forming apparatus 10a, 10b, 10c Reaction vessel 20 Gas supply system 21 First source gas supply source 22 Second source gas supply source 23 Carrier gas supply source 31 First source gas supply pipe 32 Second source Gas supply pipe 33 Carrier gas supply pipe 40 Exhaust system 41 Pressure reducing device 42 Exhaust pipe

Claims (10)

Comprising a plurality of reaction containers in which substrates to be deposited are accommodated;
In the plurality of reaction vessels, a film forming process under the same conditions including a heating step for heating the substrate, a film forming step for forming a film on the substrate, and a cooling step for cooling the substrate is performed in parallel with a time difference. Run on
While the temperature raising step is being performed in one reaction vessel among the plurality of reaction vessels, the cooling step is performed in another reaction vessel, and the composition is performed in another one or more reaction vessels. A CVD film forming apparatus, wherein a film process is performed. A source gas supply source for supplying a source gas used in the film forming step;
A source gas supply pipe that selectively supplies the source gas from the source gas supply source to one or a plurality of reaction vessels in which the film forming step is performed among the plurality of reaction vessels. 2. The CVD film forming apparatus according to claim 1, wherein A decompression device for decompressing the inside of the plurality of reaction vessels;
The CVD film forming apparatus according to claim 1, further comprising an exhaust pipe that selectively connects the decompression device and the plurality of reaction vessels. 4. The CVD film forming apparatus according to claim 1, wherein each of the plurality of reaction vessels is provided with a heater for heating the substrate to 1300 ° C. or higher by a hot wall method. 5. The CVD film forming apparatus according to claim 1, wherein silicon carbide is formed on the substrate. In a plurality of reaction vessels in which a substrate to be deposited is accommodated, a film forming process under the same conditions including a temperature raising step for heating the substrate, a film forming step for forming a film on the substrate, and a cooling step for cooling the substrate Are executed in parallel with a time difference,
While the temperature raising step is being performed in one reaction vessel among the plurality of reaction vessels, the cooling step is performed in another reaction vessel, and the formation is performed in another one or more reaction vessels. A CVD film forming method characterized by performing a film process. A source gas from a source gas supply source shared by the plurality of reaction vessels is selectively supplied to one or a plurality of reaction vessels in which the film forming step is performed among the plurality of reaction vessels. The CVD film forming method according to claim 6. The CVD film forming method according to claim 6 or 7, wherein the inside of the plurality of reaction vessels is selectively decompressed by a decompression device shared by the plurality of reaction vessels. 9. The CVD film forming method according to claim 6, wherein the substrate is heated to 1,300 [deg.] C. or higher by a hot wall method in the temperature raising step. 10. The CVD film forming method according to claim 6, 7, 8 or 9, wherein silicon carbide is formed on the substrate.

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