JP2019161161A - Device and method for washing substrate - Google Patents

Abstract

To provide a device and a method for washing a substrate, capable of washing away organic matters, such as a resist, and metal foreign matters remaining on a substrate surface and also capable of reducing a loss of a substrate material during a washing step, by washing a substrate with hydrogen peroxide-added water.SOLUTION: A substrate washing device 10 for washing a substrate using hydrogen peroxide-added water includes: cooling means 2 for cooling hydrogen peroxide-added water W1 at a temperature of 20°C or above to a predetermined temperature; and washing means 3 for washing the substrate by hydrogen peroxide-added water W2 cooled by the cooling means 2. The washing means 3 includes a washing tank 31 where the substrate is immersed into the hydrogen peroxide-added water W2 cooled by the cooling means 2 to be washed.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a substrate cleaning apparatus and a substrate cleaning method, and more particularly to a cleaning apparatus and a cleaning method for cleaning a substrate using hydrogen peroxide-added water.

  In semiconductor device manufacturing, organic substances such as resist and foreign contaminants that occur during the manufacturing process adhere to or remain on the surface of the semiconductor substrate, causing deterioration in the electrical characteristics of the semiconductor and improving its quality. It has a great influence. Therefore, cleaning of a semiconductor substrate is a very important issue in the manufacture of semiconductor devices.

  As such a substrate cleaning method, there are a wet cleaning method using a liquid as a medium and a dry cleaning method performed by a dry method. The wet cleaning method includes an immersion method in which the substrate is immersed in the liquid, and a liquid is injected onto the substrate. There is a single-wafer type. Conventionally, in the manufacture of semiconductor devices, the substrate is cleaned based on the RCA cleaning method which is an immersion wet cleaning method.

  The RCA cleaning method is a cleaning method including alkali cleaning based on hydrogen peroxide and acid cleaning. In a general RCA cleaning method, as a first step, cleaning using a mixed solution of ammonia water, hydrogen peroxide water and water for the purpose of removing fine particles (hereinafter referred to as SC-1 cleaning) is the second step. As a step, cleaning using a mixed solution of hydrochloric acid, hydrogen peroxide solution, and water for metal removal (hereinafter referred to as SC-2 cleaning) is employed. Since a natural oxide film is formed on the substrate surface after RCA cleaning by SC-1 cleaning and SC-2 cleaning, this is removed with dilute hydrofluoric acid and then rinsed with ultrapure water.

  SC-1 cleaning is based on the basic mechanism of etching and removing the substrate surface together with fine particles by a chemical reaction with an alkaline cleaning solution, and it is pointed out that microroughness, which is minute irregularities on the substrate surface, increases during cleaning. Has been. In addition, when metal impurities such as Fe and organic substances are present in the alkali cleaning solution used for SC-1 cleaning, it is known that these impurities are adsorbed on the gate insulating film, thereby causing abnormal growth of crystal grains. Yes. Such a substrate having a rough surface and a gate insulating film cause a decrease in driving capability of the manufactured field effect transistor. In addition, when a voltage is actually applied to the gate electrode of such a transistor, local electrolysis concentration may occur in the gate insulating film due to the microroughness of the substrate surface, leading to dielectric breakdown.

  As a countermeasure to the above problem, for example, as shown in Patent Document 1, a sacrificial oxide film is formed by oxidizing the surface of a single crystal silicon semiconductor by isotropic oxidation means using ozone water or hydrogen peroxide water. And flattening the surface of the single crystal silicon semiconductor by the second step of peeling the sacrificial oxide film using an aqueous solution containing hydrofluoric acid or a mixed solution of hydrochloric acid and hydrofluoric acid. Substrate processing methods for reducing surface roughness have been proposed. In the substrate processing method shown in Patent Document 1, a silicon wafer is immersed or brought into contact with ozone water or hydrogen peroxide water, and isotropically advanced regardless of the plane orientation to form a sacrificial oxide film. By removing the sacrificial oxide film, the planarization process can be performed in a very short time.

  By the way, with the recent progress of high integration of semiconductor devices and miniaturization of circuit patterns, the demand for the quality of the substrate surface has become stricter, and further improvement in cleaning performance is required. Along with this, from the viewpoint of reducing the environmental load, there is a demand for reducing the loss of substrate material in the cleaning process. However, in the above-described substrate processing method, planarization of the substrate surface can be achieved, but the progress of oxidation is very fast, and the time required to form a sacrificial oxide film on the substrate surface is extremely short (about 30 seconds). If oxidation proceeds too much, a thick oxide film is formed on the substrate surface, which increases the loss of substrate material.

Patent No. 495437

  The present invention has been made based on the above circumstances, and by washing the substrate with hydrogen peroxide-added water, organic substances such as resist remaining on the substrate surface and metal foreign matters are washed and removed, and a washing step It is an object of the present invention to provide a substrate cleaning apparatus and a substrate cleaning method that can reduce the loss of the substrate material.

  In order to solve the above problems, first, the present invention is a substrate apparatus for cleaning a substrate using hydrogen peroxide-added water, and cools hydrogen peroxide-added water at 20 ° C. or higher to a predetermined temperature. Provided is a substrate cleaning apparatus comprising cooling means and cleaning means for cleaning the substrate with hydrogen peroxide-added water cooled by the cooling means (Invention 1).

  According to this invention (Invention 1), since the activity of hydrogen peroxide is reduced by using low-temperature hydrogen peroxide-added water cooled to a predetermined temperature for cleaning the substrate, formation of an oxide film on the substrate surface Therefore, the loss of the substrate material can be reduced.

  In the said invention (invention 1), it is preferable that the said washing | cleaning means has a washing tank which immerses and wash | cleans the said board | substrate in the hydrogen peroxide addition water cooled by the said cooling means (invention 2).

  According to this invention (Invention 2), since the entire substrate can be immersed in the cooled hydrogen peroxide-added water, problems such as generation of static electricity do not occur and cleaning can be performed efficiently.

  In the said invention (invention 1 and 2), it is preferable that the said cooling means has a chiller which can cool hydrogen peroxide addition water to 0 degreeC or more and less than 20 degreeC (invention 3).

  According to this invention (Invention 3), the temperature of the hydrogen peroxide-added water supplied to the cleaning means can be controlled to be 0 ° C. or higher and lower than 20 ° C. Can be done.

  In the above invention (Invention 1-3), the apparatus further comprises a hydrogen peroxide-added water generator for generating hydrogen peroxide-added water to be supplied to the cooling means, wherein the hydrogen peroxide-added water generator is It is preferable to have a mixing means for mixing pure water and added hydrogen peroxide (Invention 4).

  According to this invention (Invention 4), the hydrogen peroxide added in the supplied ultrapure water can be uniformly dissolved by the mixing means, so that the surface of the substrate can be more easily cleaned by the cleaning means. It becomes possible to produce hydrogen peroxide-added water that can be uniformly oxidized.

  Secondly, the present invention is a substrate cleaning method for cleaning a substrate using hydrogen peroxide-added water, the cooling step of cooling the hydrogen peroxide-added water at 20 ° C. or higher to a predetermined temperature, and the cooling step And a cleaning step of cleaning the substrate with hydrogen peroxide-added water cooled in step (Invention 5).

  In the said invention (invention 5), it is preferable that the said washing | cleaning process has an immersion process which immerses and wash | cleans the said board | substrate in the hydrogen peroxide addition water cooled in the said cooling process (invention 6).

  In the said invention (invention 5 and 6), it is preferable that the said cooling process cools hydrogen peroxide addition water to 0 degreeC or more and less than 20 degreeC (invention 7).

  In the said invention (invention 5-7), the hydrogen peroxide addition water production | generation process which produces | generates the hydrogen peroxide addition water cooled at the said cooling process is further provided, and the said hydrogen peroxide addition water production | generation process is the super It is preferable to have a mixing step of mixing pure water and added hydrogen peroxide (Invention 8).

  According to the cleaning apparatus and the cleaning method of the present invention, the activity of hydrogen peroxide is reduced by using a low-temperature hydrogen peroxide-added water cooled to a predetermined temperature for cleaning the substrate. Therefore, the loss of the substrate material can be reduced.

It is explanatory drawing which shows the washing | cleaning apparatus of the board | substrate which concerns on one Embodiment of this invention.

  DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments of a substrate cleaning apparatus and a substrate cleaning method of the present invention will be described with reference to the drawings as appropriate. The embodiment described below is for facilitating the understanding of the present invention, and does not limit the present invention.

[Substrate cleaning equipment]
FIG. 1 is an explanatory view showing a substrate cleaning apparatus 10 according to an embodiment of the present invention. A cleaning apparatus 10 shown in FIG. 1 mainly includes a hydrogen peroxide-added water generating apparatus 1, a cooling means 2, and a cleaning means 3. The hydrogen peroxide-added water generating apparatus 1 generates hydrogen peroxide-added water W1 to be supplied to the cooling means 2 and mainly includes a mixing means 11, a chemical injection means 12, and a control mechanism 13. The cooling means 2 cools the hydrogen peroxide-added water W1 of 20 ° C. or higher to a predetermined temperature, and has a chiller 21 that can cool the hydrogen peroxide-added water W1 to 0 ° C. or higher and lower than 20 ° C. The cleaning means 3 is for cleaning the substrate w with the hydrogen peroxide-added water W2 cooled by the cooling means 2, and cleaning the substrate w by immersing the substrate w in the hydrogen peroxide-added water W2 cooled by the cooling means 2. A tank 31 is provided.

  In the cleaning device 10, a supply pipe L <b> 1 for supplying ultrapure water W (18.2 MΩ <) as raw water from a raw water tank (not shown) to the mixing unit 11, the mixing unit 11 and the cooling unit 2 are connected. A supply pipe L2 for connecting the cooling means 2 and the cleaning means 3 to each other. A chemical injection means 12 is connected to the supply pipe L1 via a chemical injection pipe L4. The supply pipe L <b> 1 is provided with a raw water pump 15 that supplies ultrapure water W from the raw water tank to the mixing unit 11 and a flow meter 16 that measures the flow rate of the ultrapure water W. The chemical injection pipe L4 is provided with a chemical injection pump 14 for adding hydrogen peroxide from the chemical injection means 12 to the mixing means 11.

(Hydrogen peroxide added water generator)
The hydrogen peroxide-added water generating apparatus 1 generates hydrogen peroxide-added water W1 to be supplied to the cooling means 2 and mainly includes a mixing means 11, a chemical injection means 12, and a control mechanism 13.

  The mixing means 11 mixes the supplied ultrapure water W and the added hydrogen peroxide, and has a mixing tank 111 in this embodiment. The structure and shape of the mixing means 11 are not particularly limited as long as hydrogen peroxide can be uniformly dissolved in the ultrapure water W by mixing the ultrapure water W and hydrogen peroxide. It is preferable that it has the capacity | capacitance which can ensure the time which can fully mix hydrogen, for example, what equipped the mixing tank 111 with the stirrer is mentioned.

  The chemical injection means 12 adds hydrogen peroxide to the mixing means 11, and has a hydrogen peroxide tank 121 and a chemical injection pump 14 in this embodiment. Hydrogen peroxide in the hydrogen peroxide tank 121 is added to the mixing tank 111 by the chemical injection pump 14. On the other hand, the ultrapure water W in the raw water tank is supplied to the mixing tank 111 by the raw water pump 15.

  The control mechanism 13 controls the amount of hydrogen peroxide added to the mixing means 11 by the chemical injection means 12. In the present embodiment, the control mechanism 13 calculates the required addition amount of hydrogen peroxide based on the flow rate data of the ultrapure water W measured by the flow meter 16 and the set hydrogen peroxide concentration. The operation of the chemical injection pump 14 is controlled so as to add the calculated addition amount of hydrogen peroxide.

  The flow meter 16 is not particularly limited as long as the flow rate of the ultrapure water W flowing through the supply pipe L1 can be measured and the flow rate data can be transmitted to the control mechanism 13, but ultrapure water is used as raw water. In view of the above, it is preferable to use an ultrasonic flowmeter or the like that does not come into contact with ultrapure water. The chemical injection pump 14 is not particularly limited as long as it can receive a command from the control mechanism 13 and add a predetermined amount of hydrogen peroxide from the chemical injection means 12 to the mixing means 11. Can be used.

  The control mechanism 13 is not particularly limited as long as it can control the amount of hydrogen peroxide added from the drug injection means 12 to the mixing means 11, and a mechanism to which a general method such as PID control is applied can be used. In the present embodiment, the control mechanism 13 calculates the necessary hydrogen peroxide addition amount based on the flow rate data of the ultrapure water W transmitted from the flow meter 16 and the set hydrogen peroxide concentration. The operation of the medicinal pump 14 is controlled by transmitting a command to the medicinal pump 14 so as to add the calculated addition amount of hydrogen peroxide. In this way, the control mechanism 13 controls the amount of hydrogen peroxide added from the drug injection means 12 to the mixing means 11, whereby the hydrogen peroxide-added water W <b> 1 having a set hydrogen peroxide concentration in the mixing tank 111. Can be generated.

  In the present embodiment, a preferable region of the hydrogen peroxide concentration of the hydrogen peroxide-added water W1 is 10 ppb-100 ppm. In addition, since it is common to use heated ultrapure water (hot ultrapure water) in order to efficiently dissolve hydrogen peroxide, the mixing means 11 is used to generate hydrogen peroxide-added water. The generated hydrogen peroxide-added water W1 usually has a water temperature of 20 ° C. or higher. The hydrogen peroxide-added water W1 generated in the mixing tank 111 is supplied to the cooling means 2 through the supply pipe L2.

(Cooling means)
The cooling means 2 cools the supplied hydrogen peroxide-added water W1, and in this embodiment, has a chiller 21 that can cool the hydrogen peroxide-added water W1 to 0 ° C. or more and less than 20 ° C. The chiller 21 is not particularly limited as long as the hydrogen peroxide-added water W1 can be cooled to 0 ° C. or higher and lower than 20 ° C., and a known cooling device can be used. Since the hydrogen peroxide-added water W2 whose temperature is controlled to be 0 ° C. or higher and lower than 20 ° C. decreases in the activity of hydrogen peroxide, the formation of an oxide film on the surface of the substrate w is suppressed in the cleaning means 3 provided on the downstream side. Therefore, loss of the substrate material can be reduced.

  The cooling means 2 includes a chiller unit having a plurality of chillers 21 connected in parallel. The chiller unit can change the operating state of the plurality of chillers 21 according to the degree of deterioration of the cooling function of each chiller 21. It may be configured to be switchable. Since the cooling means 2 has such a configuration, it is possible to select the chiller 21 to be used by switching the operation state of the plurality of chillers 21, so that, for example, microorganisms are generated and the cooling function is reduced. Even when the chiller 21 is present, the operation of the entire chiller unit can be continued without stopping, and the production efficiency of the cooled hydrogen peroxide-added water W2 is improved.

(Washing means)
The cleaning means 3 is for cleaning the substrate w with the cooled hydrogen peroxide-added water W2. In this embodiment, the substrate w is added to the hydrogen peroxide-added water W2 cooled to 0 ° C. or more and less than 20 ° C. It has a cleaning tank 31 that is immersed and cleaned. The cleaning tank 31 is not particularly limited as long as the entire substrate w as an object to be cleaned can be immersed, and an existing one can be applied. By using the cleaning tank 31, the entire substrate w can be immersed in the cooled hydrogen peroxide-added water W2, so that problems such as generation of static electricity do not occur and cleaning can be performed efficiently. In addition, the hydrogen peroxide-added water W2 whose temperature is controlled to be 0 ° C. or higher and lower than 20 ° C. reduces the activity of hydrogen peroxide, so that formation of an oxide film on the surface of the substrate w can be suppressed. Loss can be reduced, and the substrate can be stably cleaned.

[Substrate cleaning method]
Next, a cleaning method using the substrate cleaning apparatus 10 of the present embodiment as described above will be described in detail with reference to FIG. The substrate cleaning method mainly includes a hydrogen peroxide-added water generation step, a cooling step, and a cleaning step.

(Hydrogen peroxide added water generation process)
The hydrogen peroxide-added water generation step generates hydrogen peroxide-added water, and mainly includes an ultrapure water supply step, a control step, a hydrogen peroxide addition step, and a mixing step.

  In the hydrogen peroxide-added water generation step, first, ultrapure water W is supplied from the raw water tank to the mixing means 11 by the raw water pump 15 (ultrapure water supply step). At this time, the control mechanism 13 calculates the required amount of hydrogen peroxide based on the flow rate data of the ultrapure water W transmitted from the flow meter 16 and the set hydrogen peroxide concentration. The operation of the chemical injection pump 14 is controlled by transmitting a command to the chemical injection pump 14 so as to add the calculated addition amount of hydrogen peroxide (control process). The chemical injection pump 14 that has received the command from the control mechanism 13 adds predetermined hydrogen peroxide from the hydrogen peroxide tank 121 of the chemical injection means 12 to the mixing tank 111 of the mixing means 11 (hydrogen peroxide addition Process). In the mixing tank 111, the supplied ultrapure water W and the added hydrogen peroxide are mixed, and the hydrogen peroxide is uniformly dissolved in the ultrapure water W, thereby having a set hydrogen peroxide concentration. Hydrogen peroxide-added water W1 is generated (mixing step). The hydrogen peroxide-added water W1 generated in the hydrogen peroxide-added water generation step has a water temperature of 20 ° C. or higher. The hydrogen peroxide-added water W1 is supplied to the cooling means 2 through the supply pipe L2.

(Cooling process)
Next, in the cooling step, the supplied hydrogen peroxide-added water W1 is cooled to 0 ° C. or higher and lower than 20 ° C. by the chiller 21 included in the cooling means 2. The hydrogen peroxide-added water W2 cooled to 0 ° C. or higher and lower than 20 ° C. is supplied to the cleaning means 3 through the supply pipe L3.

  In addition, the said cooling process is performed by switching the driving | running state of several chillers 21 according to the grade of the fall of the cooling function of each chiller 21 using the chiller unit which has several chillers 21 connected in parallel. May be. Since the chiller 21 to be used can be selected by switching the operation state of the plurality of chillers 21, the operation of the entire chiller unit is stopped even when there is a chiller 21 in which the cooling function is reduced due to generation of microorganisms or the like. The production efficiency of the cooled hydrogen peroxide-added water W2 can be improved.

(Washing process)
In the cleaning process, first, when a predetermined amount of cooled hydrogen peroxide-added water W2 is supplied to the cleaning tank 31 of the cleaning means 3, the substrate w is carried into the cleaning tank 31 by a transport means (not shown). . The substrate w carried into the cleaning tank 31 is immersed and cooled in the cooled hydrogen peroxide-added water W2. When a predetermined time elapses, the substrate w after cleaning is carried out of the cleaning tank 31 by the transfer means. Note that the transport means may be one that carries a plurality of substrates w into and out of the cleaning tank 31. The hydrogen peroxide-added water after immersion cleaning of the substrate w is discharged out of the cleaning tank 31 through a wastewater pipe (not shown). And the said washing | cleaning process is performed repeatedly with respect to the board | substrate w which should be wash | cleaned next.

  As described above, according to the cleaning method of the present invention, by using a low-temperature hydrogen peroxide-added water cooled to a predetermined temperature, in particular, a temperature of 0 ° C. or higher and lower than 20 ° C., for cleaning the substrate, Therefore, the formation of an oxide film on the substrate surface can be suppressed, and the loss of the substrate material can be reduced.

  The present invention has been described above with reference to the drawings. However, the present invention is not limited to the above-described embodiment, and various modifications can be made. For example, in the above-described embodiment, in the hydrogen peroxide-added water generating apparatus 1, hydrogen peroxide stored in the hydrogen peroxide tank 121 is added to the mixing unit 11, but instead of the hydrogen peroxide tank 121, An electrolytic hydrogen peroxide generator may be used. Also. In the embodiment described above, the cleaning means 3 cleans the substrate w by the immersion method using the cleaning tank 31, but the substrate w is cleaned with hydrogen peroxide-added water cooled to 0 ° C. or more and less than 20 ° C. If possible, for example, cleaning may be performed by a single wafer method in which hydrogen peroxide-added water is sprayed onto the substrate w.

  EXAMPLES Hereinafter, although this invention is further explained in full detail based on an Example, this invention is not limited to a following example.

  The silicon substrate was cleaned using the substrate cleaning apparatus shown in FIG. First, the silicon substrate was immersed in hydrogen peroxide-added water at normal temperature (hydrogen peroxide concentration: 15 ppm) for 5 minutes, and then immersed in 0.5 wt% dilute hydrofluoric acid for 5 minutes to clean the surface.

[Example 1]
The cleaned silicon substrate was immersed in hydrogen peroxide-added water (hydrogen peroxide concentration: 10 ppm) cooled to 12 ° C. with a chiller for 5 minutes and washed, and the oxide film thickness was measured with an ellipsometer.

[Comparative Example 1]
The cleaned silicon substrate was immersed and cleaned in the same manner as in Example 1 except that the hydrogen peroxide-added water for immersing and cleaning the silicon substrate was not cooled, and the oxide film thickness was measured with an ellipsometer.

[Example 2]
The cleaned silicon substrate was immersed in hydrogen peroxide-added water (hydrogen peroxide concentration: 100 ppm) cooled to 12 ° C. with a chiller for 5 minutes and washed, and the oxide film thickness was measured with an ellipsometer.

[Comparative Example 2]
The cleaned silicon substrate was immersed and cleaned in the same manner as in Example 2 except that the hydrogen peroxide-added water for immersing and cleaning the silicon substrate was not cooled, and the oxide film thickness was measured with an ellipsometer.

  Table 1 shows numerical values of oxide film thicknesses formed on the silicon substrate after immersion cleaning with hydrogen peroxide-added water for each of Example 1, Comparative Example 1, Example 2, and Comparative Example 2. As can be seen from this result, the hydrogen peroxide activity in the hydrogen peroxide-added water is reduced by cooling the hydrogen peroxide-added water temperature for cleaning the silicon substrate to 0 ° C. or higher and lower than 20 ° C. It was found that the oxide film thickness can be controlled even by the immersion time.

  As described above, according to the substrate cleaning apparatus and the substrate cleaning method of the present invention, organic substances such as resist and metal foreign matter remaining on the substrate surface are cleaned and removed, and loss of substrate material in the cleaning process is reduced. be able to.

  INDUSTRIAL APPLICABILITY The present invention is useful as a cleaning apparatus and cleaning method for organic substances such as resists and metal contaminants generated in the manufacturing process in manufacturing semiconductor devices.

DESCRIPTION OF SYMBOLS 10 Board | substrate washing | cleaning apparatus 1 Hydrogen peroxide addition water production | generation apparatus 11 Mixing means 111 Mixing tank 12 Chemical injection means 121 Hydrogen peroxide tank 13 Control mechanism 14 Chemical injection pump 15 Raw water pump 16 Flowmeter 2 Cooling means 21 Chiller 3 Cleaning means 31 Cleaning tank L1, L2, L3 Supply pipe L4 Chemical injection pipe W Ultrapure water W1 Hydrogen peroxide added water W2 Cooled hydrogen peroxide added water w Substrate

Claims (8)

A substrate cleaning apparatus for cleaning a substrate using hydrogen peroxide-added water,
Cooling means for cooling hydrogen peroxide-added water at 20 ° C. or higher to a predetermined temperature;
And a cleaning means for cleaning the substrate with hydrogen peroxide-added water cooled by the cooling means.   The substrate cleaning apparatus according to claim 1, wherein the cleaning unit includes a cleaning tank for immersing and cleaning the substrate in hydrogen peroxide-added water cooled by the cooling unit.   The substrate cleaning apparatus according to claim 1, wherein the cooling unit includes a chiller capable of cooling the hydrogen peroxide-added water to 0 ° C. or more and less than 20 ° C. 3.   The apparatus further comprises a hydrogen peroxide-added water generator for generating hydrogen peroxide-added water to be supplied to the cooling means, wherein the hydrogen peroxide-added water generator has the supplied ultrapure water and the added hydrogen peroxide. 4. The substrate cleaning apparatus according to claim 1, further comprising a mixing unit for mixing. A substrate cleaning method for cleaning a substrate using hydrogen peroxide-added water,
A cooling step of cooling the hydrogen peroxide-added water at 20 ° C. or higher to a predetermined temperature;
And a cleaning step of cleaning the substrate with hydrogen peroxide-added water cooled in the cooling step.   The substrate cleaning method according to claim 5, wherein the cleaning step includes an immersion step of immersing and cleaning the substrate in the hydrogen peroxide-added water cooled in the cooling step.   The substrate cleaning method according to claim 5 or 6, wherein the cooling step cools the hydrogen peroxide-added water to 0 ° C or higher and lower than 20 ° C.   The method further comprises a hydrogen peroxide-added water generating step for generating hydrogen peroxide-added water to be cooled in the cooling step, wherein the hydrogen peroxide-added water generating step comprises supplying the supplied ultrapure water and the added hydrogen peroxide. The substrate cleaning method according to claim 5, further comprising a mixing step of mixing.

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