JP2019151878A - Film deposition apparatus - Google Patents

Abstract

To provide a film deposition apparatus having a constitution suppressing a deviation of an in-plane temperature distribution of an object as well as suppressing a generation of a splash defect caused by wraparound of a sputtered particle.SOLUTION: This invention is a film deposition apparatus for forming a dielectric film on a substrate 100, the substrate 100 having a dielectric layer and a conductive layer laminated in order on one major surface side of the substrate. In a vacuum chamber, a shield plate (a second shield plate) is included, the shield plate being arranged such that an area E1 from a peripheral edge of the substrate to a predetermined distance to the substrate mounted on a support body 101. The shield plate (the second shield plate) consists of a first part 104A positioned close to the substrate, and a second part 104B positioned away from the first part seen from the substrate, the second part being positioned electrically apart from the first part when forming the dielectric film on the substrate.SELECTED DRAWING: Figure 3

Description

  The present invention relates to a film forming apparatus.

Piezoelectric elements using ferroelectrics such as lead zirconate titanate (Pb (Zr, Ti) O ₃ : PZT) are applied to MEMS (Micro Electro Mechanical Systems) technology such as inkjet heads and acceleration sensors. Among these, PZT films are attracting attention and are actively studied in various institutions.

  Conventionally, as a manufacturing apparatus for forming a ferroelectric film made of lead zirconate titanate or the like, a first conductive layer, a dielectric layer, and a second conductive layer are sequentially stacked on one main surface side of a substrate. In the multilayer film manufacturing apparatus, the film formation chamber α in which the first conductive layer is formed has a first opening for regulating the film surface shape of the first conductive layer in the internal space of the film formation chamber α. The film formation chamber β including the first member and forming the dielectric layer includes a second member having a second opening that regulates the film surface shape of the dielectric layer in the internal space of the film formation chamber β. The film forming chamber γ for forming the two conductive layers includes a third member having a third opening for regulating the film surface shape of the second conductive layer in the inner space of the film forming chamber γ, and the first member is provided on the substrate. When the conductive layer is formed, the first opening is disposed so that the side end of the first conductive layer is located on the inner side of the substrate from the side end of the substrate. When the electric conductor layer is formed, an exposed portion is generated in the outer peripheral edge region of the surface of the first conductive layer, and when the second conductive layer is formed on the dielectric layer, the second conductive layer is dielectric. An apparatus for producing a multilayer film is known in which the second opening is smaller than the first opening and the third opening so as to cover the exposed portion of the outer peripheral edge region of the first conductive layer as well as the body layer ( Patent Document 1).

  In the formation of a multilayer film using such a multilayer film manufacturing apparatus, when the target is an insulator, the compound thin film of the insulator due to the wraparound of the sputtered particles progresses and the film surface is charged up, Splash defects could occur.

International Publication No. 2015/194453

  The present invention has been made in view of the above circumstances, and provides a film forming apparatus including a configuration that suppresses the occurrence of splash defects due to the wraparound of sputtered particles and suppresses the deviation of the in-plane temperature distribution of the object to be processed. For the purpose.

  In order to solve the above-described problem, the film forming apparatus according to claim 1 uses a base body in which an insulating layer and a conductive layer are sequentially stacked on one main surface side of a substrate, and a dielectric is formed on the base body. A deposition apparatus for forming a body film, wherein the deposition is arranged in a vacuum chamber so as to cover an area from an outer peripheral end of the base to a predetermined distance with respect to the base placed on a support. A plate, and the anti-adhesion plate includes a first part located in the vicinity of the base and a second part located far from the first part when viewed from the base. When forming the dielectric film, the second portion is disposed at a position electrically separated from the first portion.

  According to a second aspect of the present invention, in the film forming apparatus according to the first aspect, the first part is a conductor and the second part is an insulator.

  According to a third aspect of the present invention, in the film forming apparatus according to the first aspect, the first part is a metal and the second part is a nonmetal.

  According to a fourth aspect of the present invention, in the film forming apparatus according to the second aspect, the first part is arranged so as to overlap the second part and cover an inner peripheral edge of the second part. To do.

  According to the present invention, it is possible to suppress the occurrence of splash defects due to the wraparound of sputtered particles and to suppress uneven heating.

FIG. 2 is a schematic cross-sectional view schematically showing the entire internal configuration of the film forming apparatus according to the present embodiment. The principal part cross-sectional schematic diagram which shows the vicinity A in FIG. The partial cross section schematic diagram which shows the structure of the 2nd adhesion prevention board of a film-forming apparatus. The cross-sectional schematic diagram which shows one structural example of a multilayer film. The partial cross section schematic diagram which shows the structure of the 2nd adhesion prevention board of the film-forming apparatus concerning the comparative example 1. FIG. The partial cross section schematic diagram which shows the structure of the 2nd adhesion prevention board of the film-forming apparatus concerning the comparative example 2. FIG. FIG. 9 is a partial cross-sectional schematic diagram illustrating a configuration of a second deposition preventing plate of a film forming apparatus according to Comparative Example 3.

Next, the present invention will be described in more detail with reference to the drawings with reference to embodiments and examples. However, the present invention is not limited to these embodiments and examples.
Also, in the description using the following drawings, it should be noted that the drawings are schematic and the ratio of each dimension and the like are different from the actual ones, and are necessary for the description for easy understanding. Illustrations other than the members are omitted as appropriate.

(1) Overall configuration and operation of the film forming apparatus
FIG. 1 is a schematic cross-sectional view schematically showing the entire internal configuration of the film forming apparatus 10, and FIG.
The film forming apparatus 10 includes a vacuum chamber 11, a target 21, a first support unit 101 (S 1), temperature control units 105 and 106 (H 1 and H 2), a sputtering power supply 13, and a sputtering gas introduction unit 14. The first deposition preventing plate 35 and the second deposition preventing plate 104 are provided.

Inside the vacuum chamber 11, a target 21 made in a predetermined shape according to the composition of a film to be formed on the surface of a processing substrate 100 (W) as an example of a substrate is disposed.
The first support portion 101 (S1) is disposed at a position facing the target 21, and the processing substrate 100 (W) is placed thereon.
The first support portion 101 (S1) includes a means for electrostatically attracting the processing substrate 100 (W) (not shown). The processing substrate 100 (W) is placed on the front surface 101a (the upper surface in FIG. 2) of the first support portion 101 (S1) and electrostatically attracted, whereby the back surface of the processing substrate 100 (W) is supported by the first support. The processing substrate 100 (W) is in close contact with the surface of the portion 101 (S1), and is thermally connected to the first support portion 101 (S1).

The first support portion 101 (S1) on which the processing substrate 100 (W) is placed has its bottom surface in the outer peripheral area held by the second support portion 102 (S2), and the second support portion 102 (S2). Is fixed to the bottom surface of the vacuum chamber 11 via a support column 103.
The outer periphery of the first support portion 101 (S1) is substantially the same size as the outer periphery of the processing substrate (W), and the surface 101a of the first support portion 101 (S1) is arranged to face the surface of the target 21. ing. Thereby, the film-forming surface 100a of the processing substrate 100 (W) placed on the first support part 101 (S1) is also arranged to face the surface 21a of the target 21.

  In the first support portion 101 (S1), the bottom surface 101b of the outer peripheral area is held by the second support portion 102 (S2), and the back surface 101c (the lower surface in FIG. 2) of the first support portion 101 (S1) is The temperature control units 105 and 106 (H 1 and H 2) are spaced apart from each other.

The temperature control units 105 and 106 (H1, H2) adjust the substrate temperature by heating / cooling the processing substrate 100 (W) placed on the first support unit 101 (S1). The sputtering power source 13 applies a voltage to the target 21. The sputtering gas introduction unit 14 introduces a sputtering gas into the vacuum chamber 11.
The first deposition plate 35 and the second deposition plate 104 are disposed in the vacuum chamber 11 at positions where particles emitted from the target 21 adhere.

  A cathode electrode 22 is disposed on the upper wall surface of the vacuum chamber 11 via an insulating member 28. The cathode electrode 22 and the vacuum chamber 11 are electrically insulated, and the vacuum chamber 11 is at a ground potential. One surface side of the cathode electrode 22 is locally exposed in the vacuum chamber 11. The target 21 is fixed in close contact with the central portion of the exposed region on one side of the cathode electrode 22, and the target 21 and the cathode electrode 22 are electrically connected.

The sputtering power source 13 is disposed outside the vacuum chamber 11. The sputtering power supply 13 is electrically connected to the cathode electrode 22 and can apply an alternating voltage to the target 21 via the cathode electrode 22.
A magnet device 29 is disposed on the opposite side of the cathode electrode 22 from the target 21, that is, on the other surface side of the cathode electrode 22. The magnet device 29 is configured to form magnetic lines of force on the surface of the target 21.

The temperature controllers 105 and 106 (H 1 and H 2) have a built-in heat generating member (not shown) and a heating power source 17.
For example, SiC is used as the heat generating member. The heat generating member is disposed at a position opposite to the processing substrate 100 (W) with the first support portion 101 (S1) interposed therebetween.

  The heating power source 17 is electrically connected to the heat generating member. When a direct current is supplied from the heating power supply 17 to the heat generating member, the heat generated by the heat generating member passes through the first support portion 101 (S1) and is placed on the first support portion 101 (S1). 100 (W) and the second protective plate 104. Thereby, the temperature of the processing substrate 100 (W) and the second deposition preventing plate 104 is controlled simultaneously.

  Further, on the opposite side of the first support portion 101 (S1) across the heat generating member (not shown) built in the temperature control portions 105 and 106, that is, below the temperature control portions 105 and 106 (H1, H2). In addition, a cooling unit (not shown) may be arranged. For example, it is possible to prevent the wall surface of the vacuum chamber 11 from being heated even if the heat generating member generates heat, by configuring a cooling medium whose temperature is controlled to circulate inside the cooling unit.

  The sputter gas introduction unit 14 is connected to the inside of the vacuum chamber 11 and is configured so that the sputter gas can be introduced into the vacuum chamber 11.

(2) Prevention Plate FIG. 3 is a partial cross-sectional schematic diagram showing the configuration of the second prevention plate 104.
In the vacuum chamber 11, the 1st deposition board 35 and the 2nd deposition board 104 are arrange | positioned.
The first deposition preventing plate 35 is made of ceramics such as quartz and alumina, and as shown in FIG. 1, the inner periphery is formed in a cylindrical shape larger than the outer periphery of the target 21 and the outer periphery of the processing substrate 100 (W). Yes.

  The first deposition preventing plate 35 is disposed between the first support portion 101 (S1) and the second support portion 102 (S2) and the cathode electrode 22, and the processing substrate 100 (W) and the target 21. It is comprised so that the side of the space between may be enclosed. Thereby, adhesion of the particles emitted from the target 21 to the wall surface of the vacuum chamber 11 is prevented.

  As shown in FIG. 3, the second deposition plate 104 has a first part 104A located in the vicinity of the processing substrate 100 (W) and a distance from the first part 104A when viewed from the processing substrate 100 (W). It is comprised from the 2nd site | part 104B located.

  104 A of 1st parts cover the upper surface of the 1st support part 101 (S1), and the area | region (referred to as an edge cut area | region) from the outer periphery edge of the process board | substrate 100 (W) to predetermined distance (refer E1: FIG. 3). 104Aa that covers the inner periphery of the second part 104B and the second part 104B that overlaps and covers the second part 104B. The collar part 104Aa functions as an edge cut member.

  104 A of 1st site | parts are formed with the electroconductive material. Examples of the conductive material include metal materials such as stainless steel (SUS) and iron (Fe). Since the first portion 104A is formed of a conductive material, the charge due to the charging of the first portion 104A as the edge cut member is eliminated through the first support portion 101 (S1), and the processed substrate 100 (W ) Is prevented from being charged up.

  The second part 104B is arranged to be electrically separated from the first part 104A so as to cover the upper surface of the second support portion 102 (S2). Therefore, the second portion 104B is made of an insulating material.

As the insulating material, a material having a specific resistance of 10 ⁸ [Ω / cm] or more is desirable. Specifically, cordierite, quartz, silicon nitride, silicon carbide, aluminum nitride, mullite (of aluminum oxide and silicon dioxide). Compound), alumina (aluminum oxide), yttria, sapphire, steatite (ceramics mainly composed of MgO—SiO ₂ crystals), zirconia, and the like.
Further, a material excellent in thermal shock resistance is preferable, and a material having thermal shock resistance of 200 [° C.] or higher is desirable. Specifically, cordierite, quartz, silicon nitride, silicon carbide, aluminum nitride, mullite, sapphire, Examples include zirconia. In the film forming apparatus 10 of this embodiment, quartz is used as a member constituting the second portion 104B.

In particular, the second portion 104B located far from the first portion 104A when viewed from the processing substrate 100 (W) is made of an insulating material made of quartz with respect to the first portion 104A made of metal, The in-plane temperature distribution of the processing substrate 100 (W) whose bottom surface in the outer peripheral area is thermally connected to the surface 101a of the first support portion 101 (S1) held by the second support portion (S2) 102. Bias is suppressed.
[Experimental example]

FIG. 4 is a schematic cross-sectional view showing a configuration example of a multilayer film.
The results of a multilayer film deposition experiment using the film deposition apparatus 10 described above will be described.
[Multilayer film]
The multilayer film for which the film formation experiment was performed in the experimental example is a multilayer film in which the first conductive layer 3, the dielectric layer 4, and the second conductive layer 5 are sequentially stacked on one main surface side of the substrate 1. It is.
Specifically, as schematically shown in FIG. 7, platinum (Pt) is formed on one main surface side of the substrate 1 made of silicon (Si) having the SiO ₂ layer 2 as a thermal oxide film formed on the outermost surface. The 1st conductive layer 3 which consists of, the dielectric material layer 4, and the 2nd conductive layer 5 which consists of platinum (Pt) are arranged in order.
The dielectric layer 4 is not particularly limited, for example, lead zirconate titanate _{[Pb (Zr x Ti 1-} x) O 3: PZT], PbTiO 3, BaTiO 3, PMM-PZT, PNN- It consists of a ferroelectric material such as PZT, PMN-PZT, PNN-PT, PLZT, PZTN, NBT, KNN.

  In the formation of such a multilayer film, when the target 21 is an insulator and the compound thin film of the insulator is deposited due to the wraparound of the sputtered particles, the film surface is charged up and a certain potential difference is generated. Insulation breakdown of the film occurs. As a result, when an overcurrent flows into the dielectric breakdown portion of the film, a part of the material melted by the heat may scatter and become a splash defect.

  In this experimental example, a Si wafer having a diameter of 200 mm (8 inches) was used as the substrate 1, the edge cut amount (E1) was set to 20 [mm], and the first conductive layer 3 made of a Pt film was formed. . Thereafter, the first edge cut amount (E1) was fixed to 20 [mm], and the dielectric layer 4 made of a PZT film was formed.

[Comparative Example 1]
FIG. 6 is a partial cross-sectional schematic view showing the configuration of the second deposition preventing plate 210 of the film forming apparatus 200 according to Comparative Example 1.
The second deposition plate 210 of the deposition apparatus 200 is made of quartz, which is an insulating material, and the deposition surface 1a of the substrate 1 at a position below the second deposition plate 210 is made of sputtered particles. Since it is shielded, adhesion of sputtered particles is prevented. On the other hand, a splash defect occurred in the SiO ₂ layer 2 of the substrate 1.

Since the second deposition preventing plate 210 is insulative, it is presumed that the dielectric breakdown occurred in the SiO ₂ layer 2 when it was charged up and a certain potential difference occurred.

[Comparative Example 2]
FIG. 6 is a partial cross-sectional schematic diagram showing the configuration of the second deposition preventing plate 310 of the film forming apparatus 300 according to Comparative Example 2.
As shown in FIG. 6, the second deposition plate 310 of the film forming apparatus 300 includes a first part 310A located near the substrate 1 and a first part 310A located far from the first part 310A when viewed from the substrate 1. It consists of two parts 310B. The first part 310A and the second part 310B are made of quartz, which is an insulating material, and the film-forming surface 1a of the substrate 1, which is located below the first part 310A, is shielded from sputtered particles. Particle adhesion is prevented. On the other hand, although not visually confirmed on the SiO ₂ layer 2 of the substrate 1, splash defects of a level that can be confirmed with a general optical microscope occurred.

  The second deposition plate 310 is divided into a first part 310A located in the vicinity of the substrate 1 and a second part 310B, and the first part 310A functioning as an edge cut member is the film forming apparatus 200 of Comparative Example 1. It is surmised that the surface area is smaller than that of the second deposition preventing plate 210, and the charge-up of the first portion 310A is suppressed.

[Comparative Example 3]
FIG. 7 is a partial schematic cross-sectional view showing a configuration of the second deposition preventing plate 410 of the film forming apparatus 400 according to Comparative Example 3.
As shown in FIG. 7, the second deposition plate 410 of the film forming apparatus 400 includes a first part 410A located near the substrate 1 and a first part 410A located far from the first part 410A when viewed from the substrate 1. It consists of two parts 410B. The first portion 410A and the second portion 410B are made of stainless steel (SUS), which is a conductive material, and the deposition surface 1a of the substrate 1 that is located below the first portion 410A is shielded from the sputtered particles. Therefore, adhesion of sputtered particles is prevented. In addition, the occurrence of splash defects was not confirmed in the SiO ₂ layer 2 of the substrate 1.

  Since the first portion 410A that functions as an edge cut member is made of stainless steel, which is a conductive material, the charge due to the charging of the first portion 410A is eliminated through the first support portion 101 (S1). This is probably because the charge-up of the substrate 1 is suppressed.

  On the other hand, compared with the multilayer film formed in Comparative Examples 1 and 2, the formed multilayer film could not obtain uniform film quality such as electrical characteristics, mechanical characteristics, and optical characteristics. The first part 410A located in the vicinity of the substrate 1 and the second part 410B located far from the first part 410A when viewed from the substrate 1 are both made of stainless steel (SUS) as a conductive material. The heat of the support part 101 (S1) is dissipated through the second part 410B, and it is assumed that the in-plane temperature distribution of the substrate 1 thermally connected to the first support part 101 (S1) is biased. Is done.

[Experiment 1]
In Experimental Example 1, as shown in FIG. 3, the second deposition-preventing plate 104 is located farther from the first part 104 </ b> A than the first part 104 </ b> A located near the substrate 1 and the substrate 1. It is comprised from the 2nd site | part 104B.
The first portion 104A is made of a conductive material made of stainless steel (SUS), and the second portion 104B is made of an insulating material made of quartz.

Since the film-forming surface 1a of the substrate 1 located below the first portion 104A is shielded from the sputtered particles, the sputtered particles are prevented from adhering. In addition, the occurrence of splash defects was not confirmed in the SiO ₂ layer 2 of the substrate 1. Since the first portion 104A that functions as an edge cut member is made of stainless steel that is a conductive material, the charge due to the charging of the first portion 410A is eliminated through the first support portion 101 (S1). This is probably because the charge-up of the substrate 1 is suppressed.

  Compared to the multilayer film formed in Comparative Example 3, the formed multilayer film had uniform film quality such as electrical characteristics, mechanical characteristics, and optical characteristics. The second portion 104B located far from the first portion 104A when viewed from the substrate 1 is made of an insulating material made of quartz, so that the bottom surface of the outer peripheral region is held by the second support portion 102 (S2). The bias of the in-plane temperature distribution of the processing substrate 100 (W) thermally connected to the first support portion 101 (S1) to be performed is suppressed.

  As described above, the film forming apparatus 10 has been described as a film forming apparatus suitable for forming a multilayer film while suppressing generation of splash defects due to wraparound of sputtered particles and suppressing nonuniform heating. Is not limited to a multilayer film in which the first conductive layer 3, the dielectric layer 4, and the second conductive layer 5 are sequentially stacked on one main surface side of the substrate 1, and has an insulating layer on the outermost surface. It can also be suitably used for forming a multilayer film in which an insulating film is provided on a substrate.

DESCRIPTION OF SYMBOLS 1 Substrate, 2 SiO ₂ layer (insulating layer), 3 First conductive layer (conductive layer), 4 Dielectric layer (dielectric film), 5 Second conductive layer, 10 Film forming device, 11 Vacuum chamber, 13 Sputtering power source , 14 Sputtering gas introduction part, 21 target, 100 substrate (W: treated substrate), 101 first support part (S1: support), 102 second support part (S2), 35 first deposition preventing plate, 104 2nd adhesion prevention board, 104A 1st site | part, 104B 2nd site | part, 105,106 Temperature control part (H1, H2).

Claims (4)

A film forming apparatus for forming a dielectric film on the base using a base on which an insulating layer and a conductive layer are sequentially stacked on one main surface side of the substrate,
In the vacuum chamber, with respect to the base placed on the support, provided with a deposition plate arranged to cover a region from the outer peripheral edge of the base to a predetermined distance,
The deposition preventing plate is composed of a first part located in the vicinity of the base, and a second part located far from the first part when viewed from the base.
When the dielectric film is formed on the substrate, the second part is disposed at a position electrically separated from the first part.
A film forming apparatus. The first part is a conductor, and the second part is an insulator.
The film forming apparatus according to claim 1. The first part is a metal and the second part is a non-metal;
The film forming apparatus according to claim 1. The first part is arranged to overlap the second part and cover the inner periphery of the second part,
The film forming apparatus according to claim 1, wherein the film forming apparatus is a film forming apparatus.

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