JP2019151716A - Sealing resin composition - Google Patents

Abstract

To provide, e.g., a sealing resin composition capable of forming a cured product that can inhibit warpage and exhibits high adhesion (thermal cycle test resistance) even if heating and cooling are repeated.SOLUTION: The sealing resin composition comprises (A) a glycidyl amine type epoxy resin, (B) a glycidyl ester type epoxy resin, (C) a curative, and (D) an inorganic filler. The content of the component (A) is from 3 mass% to 15 mass% inclusive based on 100 mass% of nonvolatile components in the sealing resin composition.SELECTED DRAWING: None

Description

  The present invention relates to a sealing resin composition. Furthermore, the present invention relates to a semiconductor chip package using a sealing resin composition.

  In recent years, the demand for small high-performance electronic devices such as smartphones and tablet devices has increased, and accordingly, insulating materials used in these small electronic devices are required to have higher functions. As such an insulating material, for example, a material formed by curing a resin composition is known (see, for example, Patent Documents 1 and 2).

JP 2014-55233 A JP 2014-177530 A

  In recent years, since a smaller semiconductor chip package is required, it is also required that the insulating layer used for the semiconductor chip package and the silicon chip itself be thin. For this reason, development of the insulating layer which can suppress curvature even if thickness is thin is desired. Furthermore, the insulating layer is required to have high adhesion even after repeated heating and cooling. For example, an insulating layer that is in close contact with a silicon chip is unlikely to be peeled off from the silicon chip even after repeated heating and cooling. Is required. However, the conventional resin composition still has room for improvement in the evaluation of warpage and adhesion.

  The resin composition used for forming the insulating layer may be used as a sealing material for a semiconductor chip package. For example, it is conceivable to use a cured product obtained by curing a resin composition as a sealing layer for sealing a semiconductor chip in a semiconductor chip package. The above-described problems are also caused when the resin composition is used as a sealing material for a semiconductor chip package.

  The present invention was devised in view of the above problems, and is a sealing resin capable of suppressing warpage and obtaining a cured product having high adhesion (thermal cycle test resistance) even after repeated heating and cooling. An object of the present invention is to provide a composition; and a semiconductor chip package containing a cured product of the sealing resin composition.

  As a result of intensive studies to solve the above problems, the present inventor has included a predetermined amount of (A) glycidylamine type epoxy resin and (B) glycidyl ester type epoxy resin in the resin composition, thereby warping. It was found that a sealing resin composition that can be suppressed and can obtain a cured product having high adhesion even when heating and cooling are repeated, and the present invention has been completed. That is, the present invention includes the following.

[1] (A) Glycidylamine type epoxy resin,
(B) a glycidyl ester type epoxy resin,
A sealing resin composition comprising (C) a curing agent, and (D) an inorganic filler,
The resin composition for sealing whose content of (A) component is 3 mass% or more and 15 mass% or less when the non-volatile component in the resin composition for sealing is 100 mass%.
[2] The sealing resin composition according to [1], wherein the component (A) is a bifunctional or trifunctional glycidylamine type epoxy resin.
[3] The sealing resin composition according to [1] or [2], wherein the component (B) includes a dimer acid-modified glycidyl ester type epoxy resin.
[4] The content of the component (A) when the nonvolatile component in the sealing resin composition is 100% by mass is a1, and the nonvolatile component in the sealing resin composition is 100% by mass. (B) The resin composition for sealing in any one of [1]-[3] whose a1 / b1 is 0.6-30, when content of a component is b1.
[5] The content of the component (B) is 0.5% by mass or more and 5% by mass or less when the nonvolatile component in the encapsulating resin composition is 100% by mass, [1] to [4] The resin composition for sealing according to any one of the above.
[6] The content of the component (C) is from 0.1% by mass to 3% by mass when the nonvolatile component in the sealing resin composition is 100% by mass, [1] to [5] The resin composition for sealing according to any one of the above.
[7] The sealing resin composition according to any one of [1] to [6], wherein the component (C) contains an amine curing agent.
[8] Any of [1] to [7], in which the content of the component (D) is 80% by mass or more and 95% by mass or less when the nonvolatile component in the sealing resin composition is 100% by mass. A sealing resin composition according to claim 1.
[9] The sealing resin composition according to any one of [1] to [8], wherein the average particle diameter of the component (D) is 0.1 μm or more and 10 μm or less.
[10] The sealing resin composition according to any one of [1] to [9], wherein the component (D) is silica or alumina.
[11] The sealing resin composition according to any one of [1] to [10], which is a liquid sealing resin composition.
[12] The resin composition for sealing according to any one of [1] to [11], wherein the minimum melt viscosity from 60 ° C. to 200 ° C. of the resin composition for sealing is 50 poise or more and 400 poise or less.
[13] A circuit board, a semiconductor chip mounted on the circuit board, and a cured product of the sealing resin composition according to any one of [1] to [12] that seals the semiconductor chip. , Semiconductor chip package.
[14] A semiconductor chip package comprising a semiconductor chip and a cured product of the encapsulating resin composition according to any one of [1] to [12] that seals the semiconductor chip.

  According to the present invention, a sealing resin composition capable of suppressing warpage and obtaining a cured product having high adhesion even when heating and cooling are repeated, and a cured product of the sealing resin composition are provided. Including a semiconductor chip package.

  Hereinafter, the present invention will be described in detail with reference to embodiments and examples. However, the present invention is not limited to the following embodiments and exemplifications, and can be implemented with any modifications without departing from the scope of the claims of the present invention and the equivalents thereof. In the present invention, the content of each component in the encapsulating resin composition is a value when the nonvolatile component in the encapsulating resin composition is 100% by mass unless otherwise specified.

[Resin composition for sealing]
The sealing resin composition of the present invention contains (A) a glycidylamine type epoxy resin, (B) a glycidyl ester type epoxy resin, (C) a curing agent, and (D) an inorganic filler. When the nonvolatile component in the sealing resin composition is 100% by mass, the content of the component (A) is 3% by mass or more and 15% by mass or less. Content of (A) glycidylamine type epoxy resin, (B) glycidyl ester type epoxy resin, (C) curing agent, and (D) inorganic filler in combination, and (A) glycidylamine type epoxy resin content By making the content in the predetermined range, the sealing resin composition can suppress the warpage and obtain the desired effect of the present invention that a cured product having high adhesion can be obtained even if heating and cooling are repeated. be able to. The cured product of the encapsulating resin composition can be preferably used as an insulating layer and an encapsulating material of a semiconductor chip package, and particularly preferably as an encapsulating material, taking advantage of its excellent characteristics.

  Further, the sealing resin composition may be combined with (A) a glycidylamine type epoxy resin, (B) a glycidyl ester type epoxy resin, (C) a curing agent, and (D) an inorganic filler. Ingredients may be included. As an arbitrary component, (E) epoxy resin, (F) hardening accelerator etc. are mentioned, for example. Hereinafter, each component contained in the sealing resin composition will be described.

<(A) Glycidylamine type epoxy resin>
The sealing resin composition contains a glycidylamine type epoxy resin as the component (A), and the content of the (A) glycidylamine type epoxy resin is 100% by mass of the non-volatile component in the sealing resin composition. When it is, it is 3 mass% or more and 15 mass% or less. Since heat resistance can be improved by containing a predetermined amount of (A) glycidylamine type epoxy resin in the resin composition for sealing, thermal cycle test resistance can be improved. Further, by containing a predetermined amount of (A) glycidylamine type epoxy resin, the coefficient of linear thermal expansion (coefficient of thermal expansion, sometimes referred to as CTE, coefficient of thermal expansion) can be lowered, thereby suppressing warpage. It becomes possible to do. Furthermore, it becomes possible to reduce the viscosity of the sealing resin composition by containing a predetermined amount of (A) glycidylamine type epoxy resin in the sealing resin composition.

  (A) As the glycidylamine type epoxy resin, an epoxy resin in which a glycidyl group is directly bonded to a nitrogen atom can be used. Among these, from the viewpoint of further improving the heat resistance and lowering the linear thermal expansion coefficient, it is preferably a bifunctional or trifunctional glycidylamine type epoxy resin, and more preferably a trifunctional glycidylamine type epoxy resin. preferable. (A) The glycidylamine type epoxy resin may be a combination of a bifunctional glycidylamine type epoxy resin and a trifunctional glycidylamine type epoxy resin. For example, the trifunctional glycidylamine type epoxy resin represents a glycidylamine type epoxy resin having three epoxy groups in the molecule.

  (A) The glycidylamine type epoxy resin is preferably an aromatic glycidylamine type epoxy resin having an aromatic ring in the molecule from the viewpoint of further improving heat resistance and lowering the linear thermal expansion coefficient.

（式（Ａ）中、Ｒ^１１は、それぞれ独立にグリシジルエーテル基、又は炭素原子数１〜６のアルキル基を表し、Ｒ^１２は水素原子、又は炭素原子数１〜１０の１〜３価の炭化水素基を表す。ｎはそれぞれ独立に０〜４の整数を表し、ｍは１〜３の整数を表す。） (A) The glycidylamine type epoxy resin is preferably represented by the following formula (A).

(In formula (A), R < ¹¹ > represents a glycidyl ether group or a C1-C6 alkyl group each independently, R < ¹² > is a hydrogen atom or a C1-C10 1-3 valence. Represents a hydrocarbon group, n independently represents an integer of 0 to 4, and m represents an integer of 1 to 3).

R ¹¹ each independently represents a glycidyl ether group or an alkyl group having 1 to 6 carbon atoms. The alkyl group having 1 to 6 carbon atoms is preferably an alkyl group having 1 to 5 carbon atoms, more preferably an alkyl group having 1 to 3 carbon atoms, and further preferably a methyl group. The alkyl group having 1 to 6 carbon atoms is preferably bonded to the ortho position based on the bonding site of the nitrogen atom and the aromatic ring. Among these, from the viewpoint of obtaining the desired effect of the present invention, R ¹¹ is preferably a glycidyl ether group, and the glycidyl ether group is preferably bonded to the para position based on the binding site of the nitrogen atom and the aromatic ring. .

R ¹² represents a hydrogen atom or a 1-3 valent hydrocarbon group having 1 to 10 carbon atoms. As the hydrocarbon group having 1 to 10 carbon atoms, a trivalent group derived from an alkyl group having 1 to 10 carbon atoms, an alkylene group having 1 to 10 carbon atoms, an alkyl group having 1 to 10 carbon atoms, Examples thereof include an aryl group having 6 to 10 carbon atoms and an arylene group having 6 to 10 carbon atoms. As the alkyl group having 1 to 10 carbon atoms, an alkyl group having 1 to 5 carbon atoms is preferable, and an alkyl group having 1 to 3 carbon atoms is more preferable. The alkylene group having 1 to 10 carbon atoms is preferably an alkylene group having 1 to 5 carbon atoms, and more preferably an alkylene group having 1 to 3 carbon atoms. Examples of the aryl group having 6 to 10 carbon atoms include a phenyl group and a naphthyl group. Examples of the arylene group having 6 to 10 carbon atoms include a phenylene group and a naphthylene group. Among these, when m is 1, from the viewpoint of obtaining the desired effect of the present invention, R ¹² is preferably an alkyl group having 1 to 10 carbon atoms, and more preferably a methyl group. When m is 2, from the viewpoint of obtaining the desired effect of the present invention, R ¹² is preferably an alkylene group having 1 to 10 carbon atoms, and more preferably a methylene group.

  n independently represents an integer of 0 to 4, an integer of 0 to 3 is preferable, an integer of 0 to 2 is more preferable, 0 or 1 is further preferable, and 1 is particularly preferable. m represents an integer of 1 to 3, preferably 1 or 2, and more preferably 1.

  (A) A commercially available product may be used as the glycidylamine type epoxy resin, for example, “EP3980S” (diglycidyl-o-toluidine), “EP3950S”, “EP3950L” manufactured by ADEKA, and “630” manufactured by Mitsubishi Chemical Corporation. (Triglycidyl-p-aminophenol), “630LSD”, “ELM-100”, “ELM-100H”, “ELM-434”, “ELM-434L” manufactured by Sumitomo Chemical Co., Ltd. and the like.

  (A) A glycidyl amine type epoxy resin may be used individually by 1 type, and may be used combining two or more types by arbitrary ratios.

  (A) The glycidylamine type epoxy resin is 3% by mass or more, preferably 4% by mass or more, more preferably 5% by mass or more, when the nonvolatile component in the sealing resin composition is 100% by mass. Yes, 15 mass% or less, preferably 13 mass% or less, more preferably 10 mass% or less. (A) By making content of a glycidylamine type epoxy resin into the range which concerns, heat resistance can be improved and a linear thermal expansion coefficient (CTE) can be made low. As a result, warpage can be suppressed. Moreover, it becomes possible to suppress the crack of the hardened | cured material of the resin composition for sealing by making content of (A) glycidyl amine type epoxy resin into the range which concerns.

  (A) The epoxy equivalent of the glycidylamine type epoxy resin is preferably 50 to 5000, more preferably 50 to 3000, still more preferably 80 to 2000, and even more preferably 110 to 1000. By becoming this range, the crosslinking density of the hardened | cured material of the resin composition for sealing becomes sufficient, and it can bring about the sealing layer with small surface roughness. The epoxy equivalent can be measured according to JIS K7236, and is the mass of a resin containing 1 equivalent of an epoxy group.

  (A) The weight average molecular weight of a glycidylamine type epoxy resin becomes like this. Preferably it is 100-5000, More preferably, it is 250-3000, More preferably, it is 400-1500. Here, the weight average molecular weight of the (A) glycidylamine type epoxy resin is a weight average molecular weight in terms of polystyrene measured by a gel permeation chromatography (GPC) method.

<(B) Glycidyl ester type epoxy resin>
The resin composition for sealing contains a glycidyl ester type epoxy resin as the component (B). By containing a glycidyl ester type epoxy resin in the encapsulating resin composition, the elastic modulus of the cured product of the encapsulating resin composition can be reduced, and warpage can be suppressed.

  (B) As the glycidyl ester type epoxy resin, an epoxy resin in which a glycidyl group is directly bonded to an ester bond can be used. Among them, a bifunctional or trifunctional glycidyl ester type epoxy resin is preferable from the viewpoint of further reducing the elastic modulus of the cured product of the sealing resin composition and further suppressing warpage, and a bifunctional glycidyl ester type. More preferably, it is an epoxy resin. For example, the bifunctional glycidyl ester type epoxy resin represents a glycidyl ester type epoxy resin having two epoxy groups in the molecule.

  (B) Glycidyl ester type epoxy resin is a dimer acid-modified glycidyl ester type epoxy resin, phthalic acid diglycidyl ester type from the viewpoint of further reducing the elastic modulus of the cured product of the sealing resin composition and further suppressing warpage. Epoxy resins, hexahydrophthalic acid diglycidyl ester type epoxy resins, terephthalic acid diglycidyl ester type epoxy resins, isophthalic acid diglycidyl ester type epoxy resins, and various isomers thereof are preferred.

（式（Ｂ）中、Ｒ^２１、及びＲ^２２はそれぞれ独立にグリシジル基、又はビスフェノールＡ型ジグリシジルエーテル構造を有する基を表す。ｎ１〜ｎ４はそれぞれ独立に３〜９の整数を表す。） Among these, as the (B) glycidyl ester type epoxy resin, a dimer acid-modified glycidyl ester type epoxy resin is preferable from the viewpoint of achieving the desired effect of the present invention. The dimer acid-modified glycidyl ester type epoxy resin is preferably represented, for example, by the following formula (B).

(In formula (B), R ²¹ and R ²² each independently represent a glycidyl group or a group having a bisphenol A-type diglycidyl ether structure. N1 to n4 each independently represents an integer of 3 to 9)

R ²¹ and R ²² each independently represent a glycidyl group or a group having a bisphenol A type diglycidyl ether structure, and a glycidyl group is preferred.

  n1 represents an integer of 3 to 9, an integer of 4 to 8 is preferable, 5 to 7 is more preferable, and 7 is particularly preferable. n2 represents an integer of 3 to 9, an integer of 5 to 9 is preferable, 7 or 8 is more preferable, and 8 is particularly preferable. n3 represents an integer of 3 to 9, an integer of 4 to 8 is preferable, 6 or 7 is more preferable, and 6 is particularly preferable. n4 represents an integer of 3 to 9, preferably an integer of 4 to 8, more preferably 5 or 6, and particularly preferably 5.

  (B) A commercially available product may be used as the glycidyl ester type epoxy resin, for example, “JER871”, “JER872” manufactured by Mitsubishi Chemical Corporation, “YD-171”, “YD-172” manufactured by Nippon Steel & Sumikin Chemical Co., Ltd. “EX-721” manufactured by Nagase ChemteX Corporation.

  (B) A glycidyl ester type epoxy resin may be used individually by 1 type, and may be used combining two or more types by arbitrary ratios.

  (B) The epoxy equivalent of the glycidyl ester type epoxy resin is preferably 50 to 5000, more preferably 50 to 3000, still more preferably 80 to 2000, and even more preferably 110 to 1000. By becoming this range, the crosslinking density of the hardened | cured material of the resin composition for sealing becomes sufficient, and it can bring about the sealing layer with small surface roughness. In addition, an epoxy equivalent can be measured by the method similar to the epoxy equivalent in (A) glycidyl amine type epoxy resin.

  (B) The weight average molecular weight of the glycidyl ester type epoxy resin is preferably 100 to 5000, more preferably 250 to 3000, and still more preferably 400 to 1500. The weight average molecular weight of (B) glycidyl ester type epoxy resin is a weight average molecular weight measured by the same method as the weight average molecular weight of (A) glycidyl amine type epoxy resin.

  (B) Content of a glycidyl ester type epoxy resin can reduce the elasticity modulus of the hardened | cured material of the resin composition for sealing, and from a viewpoint of suppressing curvature, 100 mass% of non-volatile components in a resin composition are included. In this case, it is preferably 0.5% by mass or more, more preferably 1% by mass or more, and further preferably 1.5% by mass or more. From the viewpoint of reducing the linear thermal expansion coefficient, the upper limit is preferably 5% by mass or less, more preferably 4% by mass or less, and still more preferably 3% by mass or less.

  The sealing resin composition contains (A) a glycidylamine type epoxy resin and (B) a glycidyl ester type epoxy resin in a balanced manner, so that the elastic modulus and linear thermal expansion coefficient of a cured product of the sealing resin composition are obtained. As a result, warping can be suppressed. Therefore, when the nonvolatile component in the sealing resin composition is 100% by mass, the content of the component (A) is a1, and when the nonvolatile component in the sealing resin composition is 100% by mass ( B) When the content of the component is b1, a1 / b1 is preferably 0.6 or more, more preferably 1 or more, further preferably 1.5 or more, 2 or more, preferably 30 or less, more preferably Is 20 or less, more preferably 10 or less, 8 or less, and 5 or less.

  Since the sealing resin composition contains a predetermined amount of (A) glycidylamine type epoxy resin, the thermal cycle test resistance of the cured product is improved and the linear thermal expansion coefficient of the cured product can be lowered. . Moreover, since the resin composition for sealing also contains (B) glycidyl ester type epoxy resin, it becomes possible to make the elasticity modulus of hardened | cured material low. This inventor discovered that the curvature of hardened | cured material was suppressed by making low both a linear thermal expansion coefficient and an elasticity modulus. It has been conventionally known that by using a specific epoxy resin such as the component (A) and the component (B) in combination, the thermal cycle test resistance of the cured product is improved and the warpage of the cured product is suppressed. There is no new knowledge.

<(C) Curing agent>
The resin composition for sealing contains a curing agent as the component (C). The (C) curing agent usually has a function of curing the sealing resin composition by reacting with an epoxy resin such as the (A) component, the (B) component, and the (E) component described later. (C) A hardening | curing agent may be used individually by 1 type, and may be used combining two or more types by arbitrary ratios.

  (C) As the curing agent, a compound capable of curing the resin composition by reacting with an epoxy resin can be used. For example, an amine curing agent, an acid anhydride curing agent, a phenol curing agent, an activity Examples include ester-based curing agents, cyanate ester-based curing agents, benzoxazine-based curing agents, and carbodiimide-based curing agents. Among these, an amine-based curing agent is preferable from the viewpoint of enabling a low-temperature reaction and suppressing warpage of the cured product of the sealing resin composition.

  Examples of amine-based curing agents include curing agents having one or more amino groups in one molecule, such as aliphatic amines, polyether amines, alicyclic amines, aromatic amines, and the like. Among them, aromatic amines are preferable from the viewpoint of achieving the desired effect of the present invention. The amine-based curing agent is preferably a primary amine or a secondary amine, and more preferably a primary amine. Specific examples of the amine curing agent include 4,4′-methylenebis (2,6-dimethylaniline), diphenyldiaminosulfone, 4,4′-diaminodiphenylmethane, 4,4′-diaminodiphenylsulfone, 3,3 ′. -Diaminodiphenylsulfone, m-phenylenediamine, m-xylylenediamine, diethyltoluenediamine, 4,4'-diaminodiphenyl ether, 3,3'-dimethyl-4,4'-diaminobiphenyl, 2,2'-dimethyl- 4,4′-diaminobiphenyl, 3,3′-dihydroxybenzidine, 2,2-bis (3-amino-4-hydroxyphenyl) propane, 3,3-dimethyl-5,5-diethyl-4,4-diphenylmethane Diamine, 2,2-bis (4-aminophenyl) propane, 2,2-bis (4- (4 Aminophenoxy) phenyl) propane, 1,3-bis (3-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) benzene, 1,4-bis (4-aminophenoxy) benzene, 4,4 ′ -Bis (4-aminophenoxy) biphenyl, bis (4- (4-aminophenoxy) phenyl) sulfone, bis (4- (3-aminophenoxy) phenyl) sulfone, and the like. Commercially available amine-based curing agents may be used. For example, “KAYABOND C-200S”, “KAYABOND C-100”, “Kayahard A-A”, “Kayahard A-B”, “Kayahard AB” manufactured by Nippon Kayaku Co., Ltd. Kayahard AS, “Epicure W” manufactured by Mitsubishi Chemical Corporation, and the like.

  Examples of the acid anhydride curing agent include a curing agent having one or more acid anhydride groups in one molecule. Specific examples of acid anhydride-based curing agents include phthalic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylnadic acid anhydride, hydrogenated methylnadic acid Anhydride, trialkyltetrahydrophthalic anhydride, dodecenyl succinic anhydride, 5- (2,5-dioxotetrahydro-3-furanyl) -3-methyl-3-cyclohexene-1,2-dicarboxylic anhydride, tri Mellitic acid, pyromellitic anhydride, benzophenone tetracarboxylic dianhydride, biphenyl tetracarboxylic dianhydride, naphthalene tetracarboxylic dianhydride, oxydiphthalic dianhydride, 3,3'-4,4'- Diphenylsulfonetetracarboxylic dianhydride, 1,3,3a, 4,5,9b-hex Hydro-5- (tetrahydro-2,5-dioxo-3-furanyl) -naphtho [1,2-C] furan-1,3-dione, ethylene glycol bis (anhydrotrimellitate), styrene and maleic acid And polymer type acid anhydrides such as styrene / maleic acid resin copolymerized.

  Examples of the phenolic curing agent include a curing agent having one or more, preferably two or more hydroxyl groups bonded to an aromatic ring (benzene ring, naphthalene ring, etc.) in one molecule. Among these, a compound having a hydroxyl group bonded to a benzene ring is preferable. From the viewpoints of heat resistance and water resistance, a phenolic curing agent having a novolak structure is preferred. Furthermore, from the viewpoint of adhesion, a nitrogen-containing phenol-based curing agent is preferable, and a triazine skeleton-containing phenol-based curing agent is more preferable. In particular, from the viewpoint of highly satisfying heat resistance, water resistance, and adhesion, a triazine skeleton-containing phenol novolac curing agent is preferable.

  Specific examples of the phenol-based curing agent and the naphthol-based curing agent include “MEH-7700”, “MEH-7810”, “MEH-7851”, “MEH-8000H” manufactured by Meiwa Kasei Co., Ltd .; manufactured by Nippon Kayaku Co., Ltd. “NHN”, “CBN”, “GPH”; “SN-170”, “SN-180”, “SN-190”, “SN-475”, “SN-485”, “SN” manufactured by Nippon Steel & Sumikin Chemical Co., Ltd. -495 "," SN-495V "," SN-375 "," SN-395 ";" TD-2090 "," TD-2090-60M "," LA-7052 "," LA-7054 "manufactured by DIC Corporation ”,“ LA-1356 ”,“ LA-3018 ”,“ LA-3018-50P ”,“ EXB-9500 ”,“ HPC-9500 ”,“ KA-1160 ”,“ KA-1163 ”,“ KA-1165 ” " Gun Ei Chemical Industry Co., Ltd. of "GDP-6115L", "GDP-6115H", "ELPC75", and the like.

  Examples of the active ester curing agent include a curing agent having one or more active ester groups in one molecule. Among them, as the active ester curing agent, two or more ester groups having high reaction activity such as phenol esters, thiophenol esters, N-hydroxyamine esters, and heterocyclic hydroxy compound esters in one molecule are used. The compound which has is preferable. The active ester curing agent is preferably obtained by a condensation reaction between a carboxylic acid compound and / or a thiocarboxylic acid compound and a hydroxy compound and / or a thiol compound. In particular, from the viewpoint of improving heat resistance, an active ester curing agent obtained from a carboxylic acid compound and a hydroxy compound is preferable, and an active ester curing agent obtained from a carboxylic acid compound and a phenol compound and / or a naphthol compound is more preferable. .

  Examples of the carboxylic acid compound include benzoic acid, acetic acid, succinic acid, maleic acid, itaconic acid, phthalic acid, isophthalic acid, terephthalic acid, and pyromellitic acid.

  Examples of the phenol compound or naphthol compound include hydroquinone, resorcin, bisphenol A, bisphenol F, bisphenol S, phenolphthaline, methylated bisphenol A, methylated bisphenol F, methylated bisphenol S, phenol, o-cresol, m- Cresol, p-cresol, catechol, α-naphthol, β-naphthol, 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 2,6-dihydroxynaphthalene, dihydroxybenzophenone, trihydroxybenzophenone, tetrahydroxybenzophenone, phloroglucin, Benzenetriol, dicyclopentadiene type diphenol compound, phenol novolac and the like can be mentioned. Here, the “dicyclopentadiene type diphenol compound” refers to a diphenol compound obtained by condensing two molecules of phenol with one molecule of dicyclopentadiene.

  Preferable specific examples of the active ester curing agent include an active ester compound containing a dicyclopentadiene type diphenol structure, an active ester compound containing a naphthalene structure, an active ester compound containing an acetylated product of phenol novolac, and a benzoylated product of phenol novolac. The active ester compound containing is mentioned. Of these, active ester compounds containing a naphthalene structure and active ester compounds containing a dicyclopentadiene type diphenol structure are more preferred. The “dicyclopentadiene type diphenol structure” represents a divalent structure composed of phenylene-dicyclopentylene-phenylene.

  As a commercial product of an active ester type curing agent, as an active ester compound containing a dicyclopentadiene type diphenol structure, “EXB9451”, “EXB9460”, “EXB9460S”, “HPC-8000”, “HPC-8000H”, “ HPC-8000-65T ”,“ HPC-8000H-65TM ”,“ EXB-8000L ”,“ EXB-8000L-65TM ”,“ EXB-8150-65T ”(manufactured by DIC); as an active ester compound containing a naphthalene structure “EXB9416-70BK” (manufactured by DIC); “DC808” (manufactured by Mitsubishi Chemical) as an active ester compound containing an acetylated product of phenol novolac; “YLH1026” (manufactured by Mitsubishi Chemical) as an active ester compound containing a benzoylated product of phenol novolac “DC808” (manufactured by Mitsubishi Chemical) as an active ester-based curing agent that is an acetylated product of phenol novolac; “YLH1026” (manufactured by Mitsubishi Chemical) as an active ester-based curing agent that is a benzoylated product of phenol novolac; “YLH1030” (manufactured by Mitsubishi Chemical Corporation), “YLH1048” (manufactured by Mitsubishi Chemical Corporation);

  Examples of the cyanate ester curing agent include bisphenol A dicyanate, polyphenol cyanate, oligo (3-methylene-1,5-phenylene cyanate), 4,4′-methylenebis (2,6-dimethylphenyl cyanate), 4,4. '-Ethylidene diphenyl dicyanate, hexafluorobisphenol A dicyanate, 2,2-bis (4-cyanate) phenylpropane, 1,1-bis (4-cyanatephenylmethane), bis (4-cyanate-3,5-dimethyl) Bifunctional cyanate resins such as phenyl) methane, 1,3-bis (4-cyanatephenyl-1- (methylethylidene)) benzene, bis (4-cyanatephenyl) thioether, and bis (4-cyanatephenyl) ether; Phenol novolac and Polyfunctional cyanate resin derived from resol novolac; prepolymer these cyanate resin is partially triazine of; and the like. Specific examples of the cyanate ester curing agent include “PT30” and “PT60” (both phenol novolac type polyfunctional cyanate ester resins) manufactured by Lonza Japan; “ULL-950S” (polyfunctional cyanate ester resin); BA230 "," BA230S75 "(a prepolymer in which a part or all of bisphenol A dicyanate is triazine-modified into a trimer); and the like.

  Specific examples of the benzoxazine-based curing agent include “HFB2006M” manufactured by Showa Polymer Co., Ltd. and “Pd” and “Fa” manufactured by Shikoku Kasei Kogyo Co., Ltd.

  Specific examples of the carbodiimide curing agent include “V-03” and “V-07” manufactured by Nisshinbo Chemical Co., Ltd.

  (C) From the viewpoint of suppressing warpage, the content of the curing agent is preferably 0.1% by mass or more, more preferably 0.2% by mass when the nonvolatile component in the sealing resin composition is 100% by mass. % Or more, more preferably 0.3% by mass or more, preferably 3% by mass or less, more preferably 2% by mass or less, and still more preferably 1% by mass or less.

  When the number of epoxy groups in the component (A) and the component (B) is 1, the number of active groups in the (C) curing agent is preferably 0.1 or more, more preferably 0.2 or more, and still more preferably 0.3 or more. It is preferably 2 or less, more preferably 1.8 or less, still more preferably 1.6 or less, and particularly preferably 1.4 or less. Here, “the number of epoxy groups of the epoxy resin” is a value obtained by adding up all the values obtained by dividing the mass of the non-volatile component of the component (A) and the component (B) present in the sealing resin composition by the epoxy equivalent. is there. Further, “(C) the number of active groups of the curing agent” is a value obtained by adding up all the values obtained by dividing the mass of the non-volatile component of the (C) curing agent present in the sealing resin composition by the active group equivalent. . When the number of active groups of the (C) curing agent when the number of epoxy groups of the component (A) and the component (B) is 1, the desired effect of the present invention can be remarkably obtained, and more usually The moisture resistance of the cured product of the resin composition layer is further improved.

<(D) Inorganic filler>
The resin composition for sealing contains an inorganic filler as the component (D). (D) By using an inorganic filler, the linear thermal expansion coefficient of the hardened | cured material of the resin composition for sealing can be made small, and curvature can be suppressed.

  (D) An inorganic compound is used as the material of the inorganic filler. (D) As a material of the inorganic filler, for example, silica, alumina, glass, cordierite, silicon oxide, barium sulfate, barium carbonate, talc, clay, mica powder, zinc oxide, hydrotalcite, boehmite, water Aluminum oxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, magnesium oxide, boron nitride, aluminum nitride, manganese nitride, aluminum borate, strontium carbonate, strontium titanate, calcium titanate, magnesium titanate, bismuth titanate, titanium oxide , Zirconium oxide, barium titanate, barium zirconate titanate, barium zirconate, calcium zirconate, zirconium phosphate, and zirconium tungstate phosphate. Among these, silica or alumina is particularly preferable from the viewpoint of remarkably obtaining the desired effect of the present invention. Examples of the silica include amorphous silica, fused silica, crystalline silica, synthetic silica, and hollow silica. Further, spherical silica is preferable as the silica. (D) An inorganic filler may be used individually by 1 type, and may be used combining 2 or more types by arbitrary ratios.

  Usually, the (D) inorganic filler is contained in the sealing resin composition in the form of particles. (D) The average particle size of the inorganic filler is preferably 0.1 μm or more, more preferably 0.2 μm or more, particularly preferably 0.3 μm or more, 0.4 μm or more, 0.5 μm or more, or 1.0 μm or more. It is preferably 10 μm or less, more preferably 8.0 μm or less, and particularly preferably 7.0 μm or less. (D) When the average particle diameter of the inorganic filler is in the above range, the filling property of (D) the inorganic filler in the sealing resin composition is enhanced, and the desired effect of the present invention can be remarkably obtained. it can.

  (D) The average particle diameter of particles such as inorganic fillers can be measured by a laser diffraction / scattering method based on the Mie scattering theory. Specifically, the particle size distribution of the particles can be created on a volume basis by a laser diffraction / scattering particle size distribution measuring apparatus, and the average particle size can be measured as the median diameter from the particle size distribution. As the measurement sample, particles in which particles are dispersed in a solvent such as water by ultrasonic waves can be preferably used. As the laser diffraction / scattering particle size distribution measuring apparatus, “LA-500” manufactured by Horiba, Ltd. or the like can be used.

  Examples of the (D) inorganic filler as described above include “ST7030-20” manufactured by Nippon Steel & Sumikin Materials; “MSS-6” and “AC-5V” manufactured by Tatsumori; "SP60-05", "SP507-05"; "YC100C", "YA050C", "YA050C-MJE", "YA010C" manufactured by Admatechs; "UFP-30", "SFP-130MC", "FB" manufactured by Denka “-7SDC”, “FB-5SDC”, “FB-3SDC”; “Sylfil NSS-3N”, “Sylfil NSS-4N”, “Sylfil NSS-5N” manufactured by Tokuyama; “SC2500SQ”, “SO” manufactured by Admatechs -C4 "," SO-C2 "," SO-C1 "," FE9 "and the like.

  (D) It is preferable that the inorganic filler is surface-treated with an appropriate surface treatment agent. By performing the surface treatment, the moisture resistance and dispersibility of the (D) inorganic filler can be enhanced. Examples of surface treatment agents include fluorine-containing silane coupling agents, aminosilane coupling agents, epoxysilane coupling agents, mercaptosilane coupling agents, silane coupling agents, alkoxysilane compounds, organosilazane compounds, and titanates. System coupling agents and the like.

  Examples of commercially available surface treatment agents include “KBM22” (dimethyldimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd., “KBM403” (3-glycidoxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd., and manufactured by Shin-Etsu Chemical Co., Ltd. "KBM803" (3-mercaptopropyltrimethoxysilane), Shin-Etsu Chemical "KBE903" (3-aminopropyltriethoxysilane), Shin-Etsu Chemical "KBM573" (N-phenyl-3-aminopropyltrimethoxy) Silane), “KBM5783” (N-phenyl-3-aminooctyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd., “SZ-31” (hexamethyldisilazane) manufactured by Shin-Etsu Chemical Co., Ltd., “KBM103” manufactured by Shin-Etsu Chemical Co., Ltd. (Phenyltrimethoxysilane), “KBM-4803” manufactured by Shin-Etsu Chemical Co., Ltd. ( Chain epoxy type silane coupling agent), and the like. Among these, a nitrogen atom-containing silane coupling agent is preferable, an aminosilane-based coupling agent containing a phenyl group is more preferable, and N-phenyl-3-aminoalkyltrimethoxysilane is still more preferable. Moreover, a surface treating agent may be used individually by 1 type, and may be used combining two or more types by arbitrary ratios.

The degree of the surface treatment with the surface treatment agent can be evaluated by the amount of carbon per unit surface area of the (D) inorganic filler. Carbon content per unit surface area of the inorganic filler (D) is, (D) from the viewpoint of the dispersibility of the inorganic filler improved, preferably 0.02 mg / m ² or more, more preferably 0.1 mg / m ² or more, Particularly preferred is 0.2 mg / m ² or more. On the other hand, from the viewpoint of suppressing an increase in the melt viscosity of the resin composition and the melt viscosity in the sheet form, the amount of carbon is preferably 1 mg / m ² or less, more preferably 0.8 mg / m ² or less, particularly preferably. Is 0.5 mg / m ² or less.

  (D) The amount of carbon per unit surface area of the inorganic filler is determined by washing the surface-treated (D) inorganic filler with a solvent (for example, methyl ethyl ketone (hereinafter sometimes referred to as “MEK”)). Can be measured. Specifically, a sufficient amount of methyl ethyl ketone and (D) inorganic filler surface-treated with a surface treatment agent are mixed and ultrasonically cleaned at 25 ° C. for 5 minutes. Then, after removing a supernatant liquid and drying solid content, the carbon amount per unit surface area of (D) inorganic filler can be measured using a carbon analyzer. As the carbon analyzer, “EMIA-320V” manufactured by HORIBA, Ltd. can be used.

(D) The specific surface area of the inorganic filler is preferably 1 m ² / g or more, more preferably 1.5 m ² / g or more, particularly preferably 2 m ² / g or more, from the viewpoint of further improving the effect of the present invention. is there. Although there is no special restriction | limiting in an upper limit, Preferably it is 20 m < ² > / g or less, 10 m < ² > / g or less, or 5 m < ² > / g or less. The specific surface area of the inorganic filler can be measured by the BET method.

  The amount of the (D) inorganic filler in the resin composition is preferably 80% by mass or more, more preferably 81% by mass or more, and still more preferably 82% by mass with respect to 100% by mass of the nonvolatile component in the resin composition. It is above, Preferably it is 95 mass% or less, More preferably, it is 93 mass% or less, More preferably, it is 91 mass% or less. (D) When the amount of the inorganic filler is within the above range, the desired effect of the present invention can be remarkably obtained, and in particular, the linear thermal expansion coefficient of the sealing resin composition can be effectively reduced. Can do.

<(E) Epoxy resin>
The resin composition for sealing may contain an epoxy resin as the component (E). However, (E) epoxy resin excludes those corresponding to (A) glycidylamine type epoxy resin and (B) glycidyl ester type epoxy resin.

  (E) As an epoxy resin, for example, bixylenol type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, bisphenol AF type epoxy resin, dicyclopentadiene type epoxy resin, trisphenol type Epoxy resin, naphthol novolac type epoxy resin, phenol novolac type epoxy resin, tert-butyl-catechol type epoxy resin, naphthalene type epoxy resin, naphthol type epoxy resin, anthracene type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin, Linear aliphatic epoxy resin, epoxy resin having butadiene structure, alicyclic epoxy resin, alicyclic epoxy resin having ester skeleton, heterocyclic epoxy resin, B ring-containing epoxy resin, cyclohexane type epoxy resin, cyclohexanedimethanol type epoxy resins, naphthylene ether type epoxy resin, trimethylol type epoxy resin, tetraphenyl ethane epoxy resin and the like. An epoxy resin may be used individually by 1 type, and may be used in combination of 2 or more types.

  It is preferable that the sealing resin composition includes an epoxy resin having two or more epoxy groups in one molecule as (E) an epoxy resin. From the viewpoint of remarkably obtaining the desired effect of the present invention, the ratio of the epoxy resin having two or more epoxy groups in one molecule with respect to 100% by mass of the nonvolatile component (E) of the epoxy resin is preferably 50 masses. % Or more, more preferably 60% by mass or more, and particularly preferably 70% by mass or more.

  (E) As an epoxy resin, a liquid epoxy resin may be used, a solid epoxy resin may be used, and a liquid epoxy resin and a solid epoxy resin may be used in combination. Especially, it is preferable to use a liquid epoxy resin as (E) epoxy resin from a viewpoint of reducing the viscosity of the resin composition for sealing.

  The liquid epoxy resin is preferably a liquid epoxy resin having two or more epoxy groups in one molecule.

  Examples of liquid epoxy resins include bisphenol A type epoxy resins, bisphenol F type epoxy resins, bisphenol AF type epoxy resins, naphthalene type epoxy resins, phenol novolac type epoxy resins, alicyclic epoxy resins having an ester skeleton, cyclohexane type epoxy resins, A cyclohexanedimethanol type epoxy resin, an aliphatic epoxy resin, and an epoxy resin having a butadiene structure are preferable, and a bisphenol A type epoxy resin and an alicyclic epoxy resin having an ester skeleton are more preferable.

  Specific examples of the liquid epoxy resin include “HP4032”, “HP4032D”, “HP4032SS” (naphthalene type epoxy resin) manufactured by DIC; “EXA-850CRP” (bisphenol A type epoxy resin) manufactured by DIC; Mitsubishi Chemical “828US”, “jER828EL”, “825”, “Epicoat 828EL” (bisphenol A type epoxy resin) manufactured by Mitsubishi Chemical Corporation; “jER807”, “1750” (bisphenol F type epoxy resin) manufactured by Mitsubishi Chemical Corporation; “JER152” (phenol novolac type epoxy resin) manufactured by Mitsubishi Chemical Corporation “YED-216D” (aliphatic epoxy resin); “ZX1059” manufactured by Nippon Steel & Sumikin Chemical Co., Ltd. (bisphenol A type epoxy resin and bisphenol F type epoxy resin) Resin mixture); “ZX1658”, “ZX1658GS” (liquid 1,4-glycidylcyclohexane type epoxy resin) manufactured by Nippon Steel & Sumikin Chemical Co., Ltd .; “Celoxide 2021P” (alicyclic epoxy resin having an ester skeleton) manufactured by Daicel; "PB-3600" (epoxy resin having a butadiene structure); and the like. These may be used alone or in combination of two or more.

  The solid epoxy resin is preferably a solid epoxy resin having 3 or more epoxy groups in one molecule, and more preferably an aromatic solid epoxy resin having 3 or more epoxy groups in one molecule.

  Solid epoxy resins include bixylenol type epoxy resin, naphthalene type epoxy resin, naphthalene type tetrafunctional epoxy resin, cresol novolac type epoxy resin, dicyclopentadiene type epoxy resin, trisphenol type epoxy resin, naphthol type epoxy resin, biphenyl Type epoxy resin, naphthylene ether type epoxy resin, anthracene type epoxy resin, bisphenol A type epoxy resin, bisphenol AF type epoxy resin, tetraphenylethane type epoxy resin are preferable, bixylenol type epoxy resin, naphthalene type epoxy resin, bisphenol AF Type epoxy resin and naphthylene ether type epoxy resin are more preferable.

  Specific examples of the solid epoxy resin include “HP4032H” (naphthalene type epoxy resin) manufactured by DIC; “HP-4700” and “HP-4710” (naphthalene type tetrafunctional epoxy resin) manufactured by DIC; "N-690" (cresol novolac type epoxy resin) manufactured by DIC; "N-695" (cresol novolac type epoxy resin) manufactured by DIC; "HP-7200" (dicyclopentadiene type epoxy resin) manufactured by DIC; “HP-7200HH”, “HP-7200H”, “EXA-7311”, “EXA-7311-G3”, “EXA-7311-G4”, “EXA-7311-G4S”, “HP6000” (manufactured by DIC) Naphthylene ether type epoxy resin) “EPPN-502H” (trisphenol type epoxy resin) manufactured by Nippon Kayaku Co., Ltd. Resin); “NC7000L” (naphthol novolak type epoxy resin) manufactured by Nippon Kayaku; “NC3000H”, “NC3000”, “NC3000L”, “NC3100” (biphenyl type epoxy resin) manufactured by Nippon Kayaku; Nippon Steel & Sumitomo Metal "ESN475V" (naphthalene type epoxy resin) manufactured by Chemical Co .; "ESN485" (naphthol novolak type epoxy resin) manufactured by Nippon Steel & Sumikin Chemical Co., Ltd .; "YX4000H", "YX4000", "YL6121" (biphenyl type) manufactured by Mitsubishi Chemical Corporation Epoxy resin); “YX4000HK” (bixylenol type epoxy resin) manufactured by Mitsubishi Chemical; “YX8800” (anthracene type epoxy resin) manufactured by Mitsubishi Chemical; “PG-100” and “CG-” manufactured by Osaka Gas Chemical "500"; "YL" manufactured by Mitsubishi Chemical Corporation "760" (bisphenol AF type epoxy resin); "YL7800" (fluorene type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "jER1010" (solid bisphenol A type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "jER1031S manufactured by Mitsubishi Chemical Corporation" (Tetraphenylethane type epoxy resin) and the like. These may be used alone or in combination of two or more.

  (E) When a liquid epoxy resin and a solid epoxy resin are used in combination as an epoxy resin, the quantity ratio (liquid epoxy resin: solid epoxy resin) is a mass ratio, preferably 1: 0.1 to 1 : 15, more preferably 1: 0.3 to 1:10, particularly preferably 1: 0.6 to 1: 8. When the amount ratio between the liquid epoxy resin and the solid epoxy resin is within such a range, usually, when used in the form of a resin sheet, appropriate tackiness is brought about. Moreover, normally, when using with the form of a resin sheet, sufficient flexibility is acquired and a handleability improves. Furthermore, usually, a cured product having a sufficient breaking strength can be obtained.

  (E) The weight average molecular weight of the epoxy resin is preferably 100 to 5000, more preferably 250 to 3000, and still more preferably 400 to 1500 from the viewpoint of remarkably obtaining the desired effect of the present invention.

  (E) The epoxy equivalent of the epoxy resin is preferably within the same range as described as the range of the epoxy equivalent of the (A) glycidylamine type epoxy resin.

  When (E) the epoxy resin is included, the content of the (E) epoxy resin is preferably 1% by mass or more, more preferably 2% by mass or more when the nonvolatile component in the sealing resin composition is 100% by mass. More preferably, it is 3% by mass or more, preferably 20% by mass or less, more preferably 15% by mass or less, and still more preferably 10% by mass or less. (E) By keeping the quantity of epoxy resin in the said range, the mechanical strength and insulation reliability of the hardened | cured material of the resin composition for sealing can be improved.

<(F) Curing accelerator>
The resin composition for sealing may contain (F) hardening accelerator as (F) component. (F) By using a curing accelerator, curing can be accelerated when the sealing resin composition is cured.

  (F) As a hardening accelerator, a phosphorus hardening accelerator, an amine hardening accelerator, an imidazole hardening accelerator, a guanidine hardening accelerator, a metal hardening accelerator etc. are mentioned, for example. Among these, a phosphorus curing accelerator, an amine curing accelerator, an imidazole curing accelerator, and a metal curing accelerator are preferable, and an amine curing accelerator, an imidazole curing accelerator, and a metal curing accelerator are more preferable. A hardening accelerator may be used individually by 1 type, and may be used in combination of 2 or more types.

  Examples of phosphorus curing accelerators include triphenylphosphine, phosphonium borate compounds, tetraphenylphosphonium tetraphenylborate, n-butylphosphonium tetraphenylborate, tetrabutylphosphonium decanoate, (4-methylphenyl) triphenylphosphonium thiocyanate. , Tetraphenylphosphonium thiocyanate, butyltriphenylphosphonium thiocyanate, and the like. Of these, triphenylphosphine and tetrabutylphosphonium decanoate are preferable.

  Examples of amine curing accelerators include trialkylamines such as triethylamine and tributylamine, 4-dimethylaminopyridine, benzyldimethylamine, 2,4,6, -tris (dimethylaminomethyl) phenol, 1,8-diazabicyclo. (5,4,0) -undecene, 4-pyrrolidinopyridine and the like. Of these, 4-dimethylaminopyridine and 1,8-diazabicyclo (5,4,0) -undecene are preferable.

  Examples of the imidazole curing accelerator include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2- Phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2- Ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazolium trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6 -[2 -Methylimidazolyl- (1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2'-undecylimidazolyl- (1')]-ethyl-s-triazine, 2,4-diamino- 6- [2′-Ethyl-4′-methylimidazolyl- (1 ′)]-ethyl-s-triazine, 2,4-diamino-6- [2′-methylimidazolyl- (1 ′)]-ethyl-s -Triazine isocyanuric acid adduct, 2-phenylimidazole isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,3-dihydro-1H- Pyrrolo [1,2-a] benzimidazole, 1-dodecyl-2-methyl-3-benzylimidazolium chloride, 2-methylimidazoline 2-phenylimidazole compounds of imidazoline and the like and an imidazole compound and adduct of the epoxy resin. Of these, 2-ethyl-4-methylimidazole and 1-benzyl-2-phenylimidazole are preferable.

  Commercially available products may be used as the imidazole curing accelerator, and examples thereof include “P200-H50” manufactured by Mitsubishi Chemical Corporation; “2E4MZ” manufactured by Shikoku Kasei Co., Ltd.

  Examples of the guanidine curing accelerator include dicyandiamide, 1-methylguanidine, 1-ethylguanidine, 1-cyclohexylguanidine, 1-phenylguanidine, 1- (o-tolyl) guanidine, dimethylguanidine, diphenylguanidine, trimethylguanidine, Tetramethylguanidine, pentamethylguanidine, 1,5,7-triazabicyclo [4.4.0] dec-5-ene, 7-methyl-1,5,7-triazabicyclo [4.4.0] Deca-5-ene, 1-methyl biguanide, 1-ethyl biguanide, 1-n-butyl biguanide, 1-n-octadecyl biguanide, 1,1-dimethyl biguanide, 1,1-diethyl biguanide, 1-cyclohexyl biguanide, 1 -Allyl biguanide, 1-phenyl biguanide, 1- ( - tolyl) biguanide, and the like. Of these, dicyandiamide and 1,5,7-triazabicyclo [4.4.0] dec-5-ene are preferred.

  As a metal type hardening accelerator, the organometallic complex or organometallic salt of metals, such as cobalt, copper, zinc, iron, nickel, manganese, tin, is mentioned, for example. Specific examples of the organometallic complex include organic cobalt complexes such as cobalt (II) acetylacetonate and cobalt (III) acetylacetonate, organic copper complexes such as copper (II) acetylacetonate, and zinc (II) acetylacetonate. Organic zinc complexes such as iron (III) acetylacetonate, organic nickel complexes such as nickel (II) acetylacetonate, and organic manganese complexes such as manganese (II) acetylacetonate. Examples of the organic metal salt include zinc octylate, tin octylate, zinc naphthenate, cobalt naphthenate, tin stearate, and zinc stearate.

  When the sealing resin composition contains (F) a curing accelerator, the content of the (F) curing accelerator is a non-volatile content in the sealing resin composition from the viewpoint of remarkably obtaining the desired effect of the present invention. When the component is 100% by mass, it is preferably 0.01% by mass, more preferably 0.03% by mass, still more preferably 0.05% by mass, preferably 3% by mass, more preferably 1.5% by mass. More preferably, it is 1% by mass.

<(G) Optional additive>
The sealing resin composition may further contain an optional additive as an optional component in addition to the components described above. Examples of such additives include organometallic compounds such as organocopper compounds, organozinc compounds, and organocobalt compounds; thermoplastic resins; thickeners; antifoaming agents; leveling agents; adhesion-imparting agents; Resin additives such as flame retardants; These additives may be used individually by 1 type, and may be used combining two or more types by arbitrary ratios.

  The sealing resin composition described above may contain a solvent as necessary, but is preferably a solvent-free sealing resin composition substantially free of a solvent. Thus, even if it does not contain a solvent, the said resin composition for sealing can be fluidized when shape | molding using a compression molding method, and can implement | achieve the outstanding compression moldability. Therefore, this sealing resin composition can be used as a solvent-free resin composition. “Substantially free of solvent” means, for example, that the content of the solvent is 1% by mass or less based on the entire solventless resin composition.

[Method for producing sealing resin composition]
The sealing resin composition can be produced, for example, by a method of stirring the compounding components using a stirring device such as a rotary mixer.

[Characteristics of encapsulating resin composition]
The sealing resin composition described above can provide a cured product having a low elastic modulus at 25 ° C. Therefore, a sealing layer and an insulating layer having a low elastic modulus can be obtained by using this sealing resin composition. For example, using the sealing resin composition described above, a test piece is manufactured by the method described in the examples, and the elastic modulus of the test piece at 25 ° C. is measured. In this case, the obtained elastic modulus at 25 ° C. is usually 20 GPa or less, preferably 16 GPa or less, more preferably 13 GPa or less. There is no particular limitation on adjustment, and it can be usually 0.1 GPa or more.

  Moreover, according to the sealing resin composition described above, a cured product having a low coefficient of linear thermal expansion (CTE) can be obtained. Therefore, a sealing layer and an insulating layer having a low linear thermal expansion coefficient can be obtained by using this sealing resin composition. For example, using the sealing resin composition described above, a test piece is manufactured by the method described in the examples, and the linear thermal expansion coefficient of the test piece is measured. In this case, the linear thermal expansion coefficient obtained is usually 15 ppm / ° C. or less, preferably 13 ppm / ° C. or less, more preferably 12 ppm / ° C. or less. The lower limit is not particularly limited and is usually 0 ppm / ° C., preferably 1 ppm / ° C. or higher.

  Moreover, according to the resin composition for sealing mentioned above, the layer of the hardened | cured material which can suppress curvature can be obtained. Therefore, by using this sealing resin composition, it is possible to obtain a sealing layer and an insulating layer capable of suppressing warpage of the circuit board and the semiconductor chip package. For example, by using the sealing resin composition described above, a cured product layer of the sealing resin composition is formed on a 12-inch silicon wafer by the method described in the examples, thereby preparing a sample substrate. In this case, the amount of warpage measured by the method described in Examples at 25 ° C. can be usually less than 3 mm, preferably less than 2 mm.

  Moreover, the sealing resin composition mentioned above can obtain the hardened | cured material which is excellent in high adhesiveness, ie, excellent in a thermal cycle test tolerance, even if it repeats a heating and cooling. Therefore, by using this sealing resin composition, a sealing layer and an insulating layer having excellent thermal cycle test resistance can be obtained. For example, using the above-described sealing resin composition, a cured product layer of the sealing resin composition is formed on a 12-inch silicon wafer on which a silicon chip is mounted, and a resin wafer is manufactured. In this case, when a thermal cycle test in which the treatment for 30 minutes at −55 ° C. and the treatment for 30 minutes at 120 ° C. for 30 minutes is taken as one cycle and measured by the method described in the examples, No delamination occurs at the interface between the silicon chip and the cured product layer.

  Moreover, the resin composition for sealing mentioned above shows the characteristic that a viscosity is low normally. Therefore, by using this sealing resin composition, it becomes excellent in handleability when performing compression molding using a compression mold apparatus. For example, using a RE80 viscometer (0.2 to 0.3 ml of the sealing resin composition to be measured, measuring chamber temperature 25.0 ° C.), the rotation speed of the rotor is set to 1 rpm, and the viscosity after 120 seconds. Measure. In this case, the viscosity of the sealing resin composition can be usually 600 Pa · s or less, preferably 550 Pa · s or less. There is no particular limitation on the upper limit, and it can be usually 0.1 Pa · s or more.

  Moreover, the resin composition for sealing mentioned above shows the characteristic that the minimum melt viscosity from 60 degreeC to 200 degreeC is low normally. Therefore, by using this sealing resin composition, the embedding property when manufacturing a circuit board or the like is improved. For example, using a dynamic viscoelasticity measuring device (1.2 to 1.3 g of the sealing resin composition to be measured, using a parallel plate with a diameter of 18 mm), the rate of temperature increase from 60 ° C. to 200 ° C. The temperature is raised at 5 ° C./min, and the dynamic viscoelastic modulus is measured under measurement conditions of a measurement temperature interval of 2.5 ° C., a frequency of 1 Hz, and a strain of 1 deg. In this case, the minimum melt viscosity of the sealing resin composition can be usually 400 poise or less, preferably 300 poise or less, more preferably 200 poise or less. There is no particular limitation on the upper limit, and it can be usually 50 poise or more, preferably 80 poise or more, more preferably 100 poise or more.

  The sealing resin composition described above is excellent in compression moldability. Therefore, when forming a resin composition layer on a circuit board or a semiconductor chip by compression molding, it is possible to fill the sealing resin composition to every corner. Accordingly, by curing the resin composition layer, a sealing layer having excellent sealing reliability and an insulating layer having excellent insulating reliability can be obtained.

  The encapsulating resin composition may be liquid or solid, but is preferably liquid when molded. For example, a sealing resin composition that is liquid at room temperature (for example, 20 ° C.) may be molded by compression molding at room temperature without any special temperature adjustment. Molding by the method may be performed. Alternatively, a sealing resin composition that is liquid at normal temperature, a sealing resin composition filled in a cartridge, the sealing resin composition discharged from the cartridge, and then molded by a compression molding method Good.

  In addition, since a sealing resin composition that is solid at room temperature can usually be made liquid by adjusting its temperature to a higher temperature (for example, 130 ° C.), the compression molding method can be performed by appropriate temperature adjustment such as heating. Can be formed. Even if the said resin composition for sealing does not contain a solvent normally, it can become a liquid state at suitable temperature, for example, can be used as a liquid sealing material. Here, the liquid state means that the viscosity measured by the measurement method described in [Measurement of viscosity] described later is less than 1500 Pa · s.

  Since the sealing resin composition has the above-described characteristics, it can be suitably used as a resin composition for sealing an electronic device such as an organic EL device or a semiconductor, particularly for sealing a semiconductor. The resin composition (resin composition for semiconductor encapsulation), preferably a resin composition for encapsulating a semiconductor chip (resin composition for semiconductor chip encapsulation) can be suitably used. Moreover, the resin composition for sealing can be used as a resin composition for insulating layers other than the sealing use. For example, the sealing resin composition includes a resin composition for forming an insulating layer of a semiconductor chip package (a resin composition for an insulating layer of a semiconductor chip package) and a circuit board (printed wiring board). .)) Can be suitably used as a resin composition (resin composition for an insulating layer of a circuit board) for forming an insulating layer.

  As the semiconductor chip package, for example, FC-CSP, MIS-BGA package, ETS-BGA package, Fan-out type WLP (Wafer Level Package), Fan-in type WLP, Fan-out type PLP (Panel Level Package), A Fan-in type PLP may be mentioned.

  The sealing resin composition may be used as an underfill material. For example, the sealing resin composition may be used as a MUF (Molding Under Filling) material used after a semiconductor chip is connected to a substrate.

  Furthermore, the sealing resin composition is used in a wide variety of applications in which a sealing resin composition is used, such as a sheet-like laminated material such as a resin sheet or prepreg, a solder resist, a die bonding material, a hole-filling resin, or a component-embedding resin. Can be used for

[Resin sheet]
The resin sheet of this invention has a support body and the resin composition layer provided on this support body. A resin composition layer is a layer containing the resin composition for sealing of this invention, and is normally formed with the resin composition for sealing.

  The thickness of the resin composition layer is preferably 600 μm or less, more preferably 550 μm or less, still more preferably 500 μm or less, 400 μm or less, 350 μm or less, 300 μm or less, or 200 μm or less from the viewpoint of reducing the thickness. The minimum of the thickness of a resin composition layer is not specifically limited, For example, it may be 1 micrometer or more, 5 micrometers or more, 10 micrometers or more, etc.

  Examples of the support include a film made of a plastic material, a metal foil, and a release paper, and a film made of a plastic material and a metal foil are preferable.

  When a film made of a plastic material is used as the support, examples of the plastic material include polyethylene terephthalate (hereinafter sometimes abbreviated as “PET”) and polyethylene naphthalate (hereinafter abbreviated as “PEN”). Polyester) such as polycarbonate; acrylic polymer such as polymethyl methacrylate (hereinafter sometimes abbreviated as “PMMA”); cyclic polyolefin; triacetyl cellulose (hereinafter referred to as “PMMA”). May be abbreviated as “TAC”); polyether sulfide (hereinafter may be abbreviated as “PES”); polyether ketone; polyimide; Among these, polyethylene terephthalate and polyethylene naphthalate are preferable, and inexpensive polyethylene terephthalate is particularly preferable.

  When metal foil is used as the support, examples of the metal foil include copper foil and aluminum foil. Among these, copper foil is preferable. As the copper foil, a foil made of a single metal of copper may be used, and a foil made of an alloy of copper and another metal (for example, tin, chromium, silver, magnesium, nickel, zirconium, silicon, titanium, etc.). It may be used.

  The support may be subjected to a treatment such as a mat treatment, a corona treatment, or an antistatic treatment on the surface to be joined to the resin composition layer.

  Moreover, as a support body, you may use the support body with a release layer which has a release layer in the surface joined to a resin composition layer. Examples of the release agent used for the release layer of the support with a release layer include one or more release agents selected from the group consisting of alkyd resins, polyolefin resins, urethane resins, and silicone resins. . Examples of commercially available release agents include “SK-1”, “AL-5”, and “AL-7” manufactured by Lintec Corporation, which are alkyd resin release agents. In addition, examples of the support with a release layer include “Lumirror T60” manufactured by Toray Industries, Inc., “Purex” manufactured by Teijin Limited, “Unipeel” manufactured by Unitika, and the like.

  The thickness of the support is preferably in the range of 5 μm to 75 μm, and more preferably in the range of 10 μm to 60 μm. In addition, when using a support body with a release layer, it is preferable that the thickness of the whole support body with a release layer is the said range.

  The resin sheet can be produced, for example, by applying a sealing resin composition on a support using an application device such as a die coater. If necessary, the resin composition for sealing may be dissolved in an organic solvent to prepare a resin varnish, and the resin varnish may be applied to produce a resin sheet. By using the solvent, the viscosity can be adjusted and the coating property can be improved. When the resin varnish is used, the resin varnish is usually dried after application to form a resin composition layer.

  Examples of the organic solvent include ketone solvents such as acetone, methyl ethyl ketone, and cyclohexanone; acetate solvents such as ethyl acetate, butyl acetate, cellosolve acetate, propylene glycol monomethyl ether acetate, and carbitol acetate; carbitols such as cellosolve and butyl carbitol. Solvents; aromatic hydrocarbon solvents such as toluene and xylene; amide solvents such as dimethylformamide, dimethylacetamide (DMAc) and N-methylpyrrolidone; An organic solvent may be used individually by 1 type, and may be used combining 2 or more types by arbitrary ratios.

  Drying may be performed by a known method such as heating or hot air blowing. The drying condition is such that the content of the organic solvent in the resin composition layer is usually 10% by mass or less, preferably 5% by mass or less. Depending on the boiling point of the organic solvent in the resin varnish, for example, when using a resin varnish containing 30% by mass to 60% by mass of the organic solvent, the resin composition is dried at 50 ° C. to 150 ° C. for 3 minutes to 10 minutes. A physical layer can be formed.

  The resin sheet may contain arbitrary layers other than a support body and a resin composition layer as needed. For example, in the resin sheet, a protective film according to the support may be provided on the surface of the resin composition layer that is not bonded to the support (that is, the surface opposite to the support). The thickness of the protective film is, for example, 1 μm to 40 μm. By the protective film, it is possible to prevent dust and the like from being attached to the surface of the resin composition layer and scratches. When the resin sheet has a protective film, the resin sheet can be used by peeling off the protective film. In addition, the resin sheet can be stored in a roll shape.

[Circuit board]
The circuit board used in the present invention can be manufactured, for example, by a manufacturing method including the following steps (1) and (2). The cured product of the sealing resin composition described above is used as a sealing layer for a semiconductor chip or the like on the circuit board as described later, and the insulating layer included in the circuit board is cured by the sealing resin composition. You may form by a thing. However, the insulating layer may be formed of a material other than the cured product of the sealing resin composition described above.
(1) The process of forming a resin composition layer on a base material.
(2) A step of thermosetting the resin composition layer to form an insulating layer.

  In step (1), a substrate is prepared. Examples of the substrate include glass epoxy substrates, metal substrates (stainless steel, cold rolled steel plate (SPCC), etc.), polyester substrates, polyimide substrates, BT resin substrates, thermosetting polyphenylene ether substrates, and the like. Moreover, the base material may have metal layers, such as copper foil, on the surface as a part of the said base material. For example, you may use the base material which has the 1st metal layer and the 2nd metal layer which can peel on both surfaces. When such a base material is used, a conductor layer as a wiring layer that can function as circuit wiring is usually formed on the surface of the second metal layer opposite to the first metal layer. As a base material having such a metal layer, for example, an ultrathin copper foil with a carrier copper foil “Micro Thin” manufactured by Mitsui Mining & Smelting Co., Ltd. may be mentioned.

  Moreover, the conductor layer may be formed in the surface of one or both of a base material. In the following description, a member including a base material and a conductor layer formed on the surface of the base material may be referred to as a “base material with a wiring layer” as appropriate. The conductive material contained in the conductive layer is, for example, one selected from the group consisting of gold, platinum, palladium, silver, copper, aluminum, cobalt, chromium, zinc, nickel, titanium, tungsten, iron, tin, and indium. Examples include materials containing the above metals. As the conductive material, a single metal or an alloy may be used. Examples of the alloy include alloys of two or more metals selected from the above group (for example, nickel-chromium alloy, copper-nickel alloy, and copper-titanium alloy). Above all, from the viewpoint of versatility of conductor layer formation, cost, and ease of patterning, chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver or copper as a single metal; and nickel-chromium alloy as an alloy , Copper / nickel alloy, copper / titanium alloy; Among them, chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver or copper single metal; and nickel-chromium alloy are more preferable, and copper single metal is particularly preferable.

  The conductor layer may be patterned so as to function as a wiring layer, for example. At this time, the line (circuit width) / space (inter-circuit width) ratio of the conductor layer is not particularly limited, but is preferably 20/20 μm or less (that is, the pitch is 40 μm or less), more preferably 10/10 μm or less, The thickness is preferably 5/5 μm or less, more preferably 1/1 μm or less, and particularly preferably 0.5 / 0.5 μm or more. The pitch need not be the same throughout the conductor layer. The minimum pitch of the conductor layer may be, for example, 40 μm or less, 36 μm or less, or 30 μm or less.

  The thickness of the conductor layer is preferably 3 μm to 35 μm, more preferably 5 μm to 30 μm, still more preferably 10 μm to 20 μm, and particularly preferably 15 μm to 20 μm, depending on the design of the circuit board.

  For example, the conductive layer is a pattern dry process in which a dry film (photosensitive resist film) is laminated on a substrate, a pattern is formed by exposing and developing the dry film under predetermined conditions using a photomask. It can be formed by a method including a step of obtaining a film, a step of forming a conductor layer by a plating method such as an electrolytic plating method using the developed pattern dry film as a plating mask, and a step of peeling the pattern dry film. As the dry film, a photosensitive dry film made of a photoresist composition can be used. For example, a dry film formed of a resin such as a novolac resin or an acrylic resin can be used. The lamination conditions of the base material and the dry film can be the same as those of the base material and the resin sheet to be described later. Peeling of the dry film can be performed using, for example, an alkaline peeling solution such as a sodium hydroxide solution.

  After preparing the base material, a resin composition layer is formed on the base material. When the conductor layer is formed on the surface of the substrate, the resin composition layer is preferably formed so that the conductor layer is embedded in the resin composition layer.

  Formation of a resin composition layer is performed by laminating | stacking a resin sheet and a base material, for example. This lamination can be performed, for example, by bonding the resin composition layer to the substrate by thermocompression bonding the resin sheet to the substrate from the support side. Examples of the member that heat-presses the resin sheet to the base material (hereinafter sometimes referred to as “heat-pressing member”) include a heated metal plate (SUS end plate, etc.) or a metal roll (SUS roll, etc.). It is done. In addition, it is preferable not to press the thermocompression bonding member directly on the resin sheet, but to press it through an elastic material such as heat-resistant rubber so that the resin sheet sufficiently follows the surface irregularities of the base material.

  Lamination of the base material and the resin sheet may be performed by, for example, a vacuum laminating method. In the vacuum laminating method, the thermocompression bonding temperature is preferably in the range of 60 ° C to 160 ° C, more preferably 80 ° C to 140 ° C. The thermocompression bonding pressure is preferably in the range of 0.098 MPa to 1.77 MPa, more preferably 0.29 MPa to 1.47 MPa. The thermocompression bonding time is preferably in the range of 20 seconds to 400 seconds, more preferably 30 seconds to 300 seconds. Lamination is preferably performed under reduced pressure conditions with a pressure of 13 hPa or less.

  After lamination, the laminated resin sheets may be smoothed under normal pressure (atmospheric pressure), for example, by pressing a thermocompression bonding member from the support side. The pressing conditions for the smoothing treatment can be the same conditions as the thermocompression bonding conditions for the laminate. In addition, you may perform lamination | stacking and a smoothing process continuously using a vacuum laminator.

  The resin composition layer may be formed from the resin sheet or the sealing resin composition of the present invention. When the resin composition layer is formed from the sealing resin composition, the resin composition layer can be formed by, for example, a compression molding method. Further, the resin composition layer may be formed by filling the cartridge with a sealing resin composition and discharging the sealing resin composition from the cartridge. The molding conditions may be the same as the method for forming the resin composition layer in the step of forming the sealing layer of the semiconductor chip package described later.

  After forming the resin composition layer on the substrate, the resin composition layer is thermoset to form an insulating layer. Although the thermosetting conditions of the resin composition layer vary depending on the type of the resin composition, the curing temperature is usually in the range of 120 ° C to 240 ° C (preferably in the range of 150 ° C to 220 ° C, more preferably in the range of 170 ° C to 200 ° C. ), And the curing time is in the range of 5 minutes to 120 minutes (preferably 10 minutes to 100 minutes, more preferably 15 minutes to 90 minutes).

  Prior to thermosetting the resin composition layer, the resin composition layer may be subjected to a preheating treatment in which the resin composition layer is heated at a temperature lower than the curing temperature. For example, prior to thermosetting the resin composition layer, the resin composition layer is usually at a temperature of 50 to 120 ° C. (preferably 60 to 110 ° C., more preferably 70 to 100 ° C.). May be preheated for usually 5 minutes or longer (preferably 5 minutes to 150 minutes, more preferably 15 minutes to 120 minutes).

As described above, a circuit board having an insulating layer can be manufactured. The circuit board manufacturing method may further include an optional step.
For example, when a circuit board is manufactured using a resin sheet, the method for manufacturing the circuit board may include a step of peeling the support of the resin sheet. The support may be peeled off before the thermosetting of the resin composition layer, or may be peeled off after the thermosetting of the resin composition layer.

  The method for manufacturing a circuit board may include, for example, a step of polishing the surface of the insulating layer after forming the insulating layer. The polishing method is not particularly limited. For example, the surface of the insulating layer can be polished using a surface grinder.

  The method for manufacturing a circuit board may include, for example, a step (3) of interconnecting conductor layers, that is, a step of drilling a so-called insulating layer. Thereby, holes such as via holes and through holes can be formed in the insulating layer. Examples of the method for forming the via hole include laser irradiation, etching, mechanical drilling, and the like. The size and shape of the via hole may be appropriately determined according to the design of the circuit board. In the step (3), interlayer connection may be performed by polishing or grinding the insulating layer.

  After forming the via hole, it is preferable to perform a step of removing smear in the via hole. This process is sometimes called a desmear process. For example, when the conductor layer is formed on the insulating layer by a plating process, wet desmear treatment may be performed on the via hole. In addition, when the conductor layer is formed on the insulating layer by a sputtering process, a dry desmear process such as a plasma treatment process may be performed. Furthermore, a roughening process may be performed on the insulating layer by a desmear process.

  Further, before the conductor layer is formed on the insulating layer, a roughening treatment may be performed on the insulating layer. According to this roughening treatment, the surface of the insulating layer including the inside of the via hole is generally roughened. As the roughening treatment, either dry or wet roughening treatment may be performed. Examples of the dry roughening treatment include plasma treatment. Moreover, as an example of a wet roughening process, the method of performing the swelling process by a swelling liquid, the roughening process by an oxidizing agent, and the neutralization process by a neutralization liquid in this order is mentioned.

  After forming the via hole, a conductor layer is formed on the insulating layer. By forming the conductor layer at the position where the via hole is formed, the newly formed conductor layer and the conductor layer on the surface of the substrate are electrically connected, and interlayer connection is performed. Examples of the method for forming the conductor layer include a plating method, a sputtering method, a vapor deposition method, and the like, and among them, the plating method is preferable. In a preferred embodiment, the surface of the insulating layer is plated by an appropriate method such as a semi-additive method or a full additive method to form a conductor layer having a desired wiring pattern. Moreover, when the support body in a resin sheet is metal foil, the conductor layer which has a desired wiring pattern can be formed by a subtractive method. The material of the conductor layer to be formed may be a single metal or an alloy. Moreover, this conductor layer may have a single layer structure, or may have a multilayer structure including two or more layers of different kinds of materials.

  Here, the example of embodiment which forms a conductor layer on an insulating layer is demonstrated in detail. A plating seed layer is formed on the surface of the insulating layer by electroless plating. Next, a mask pattern for exposing a part of the plating seed layer is formed on the formed plating seed layer corresponding to a desired wiring pattern. An electrolytic plating layer is formed on the exposed plating seed layer by electrolytic plating, and then the mask pattern is removed. Thereafter, an unnecessary plating seed layer can be removed by a process such as etching to form a conductor layer having a desired wiring pattern. In addition, when forming a conductor layer, the dry film used for formation of a mask pattern is the same as the said dry film.

  The circuit board manufacturing method may include a step (4) of removing the base material. By removing the base material, a circuit board having an insulating layer and a conductor layer embedded in the insulating layer can be obtained. This step (4) can be performed, for example, when a substrate having a peelable metal layer is used.

[Semiconductor chip package]
The semiconductor chip package according to the first embodiment of the present invention is a cured product of the above-described circuit board, the semiconductor chip mounted on the circuit board, and the sealing resin composition of the present invention that seals the semiconductor chip. Including. This semiconductor chip package can be manufactured by bonding a semiconductor chip to a circuit board.

  The sealing of the semiconductor chip can be performed by a method similar to the step (C) in the second embodiment described later.

  As a bonding condition between the circuit board and the semiconductor chip, any condition that allows the conductor connection between the terminal electrode of the semiconductor chip and the circuit wiring of the circuit board can be adopted. For example, conditions used in flip chip mounting of a semiconductor chip can be adopted. Further, for example, the semiconductor chip and the circuit board may be bonded via an insulating adhesive.

  As an example of the bonding method, there is a method in which a semiconductor chip is pressure-bonded to a circuit board. As the crimping conditions, the crimping temperature is usually in the range of 120 ° C to 240 ° C (preferably in the range of 130 ° C to 200 ° C, more preferably in the range of 140 ° C to 180 ° C), and the crimping time is usually in the range of 1 second to 60 seconds. (Preferably 5 to 30 seconds).

  Another example of the bonding method is a method in which a semiconductor chip is reflowed and bonded to a circuit board. Reflow conditions are good also as the range of 120 to 300 degreeC.

  After the semiconductor chip is bonded to the circuit board, the semiconductor chip may be filled with a mold underfill material. As the mold underfill material, the above-described sealing resin composition may be used, or the above-described resin sheet may be used.

  A semiconductor chip package according to a second embodiment of the present invention includes a semiconductor chip and a cured product of the sealing resin composition that seals the semiconductor chip. As a semiconductor chip package according to the second embodiment, for example, a Fan-out type WLP can be cited.

A manufacturing method of such a semiconductor chip package is as follows:
(A) Laminating a temporary fixing film on a substrate;
(B) a step of temporarily fixing the semiconductor chip on the temporary fixing film;
(C) forming a sealing layer on the semiconductor chip;
(D) The process of peeling a base material and a temporary fixing film from a semiconductor chip,
(E) a step of forming a rewiring forming layer as an insulating layer on the surface of the semiconductor chip substrate and the temporarily fixed film peeled off,
(F) forming a rewiring layer as a conductor layer on the rewiring formation layer; and
(G) forming a solder resist layer on the rewiring layer;
including. Further, the manufacturing method of the semiconductor chip package is as follows.
(H) A step of dicing a plurality of semiconductor chip packages into individual semiconductor chip packages and separating them into individual pieces may be included.

(Process (A))
Step (A) is a step of laminating a temporary fixing film on a base material. The lamination conditions of the base material and the temporary fixing film may be the same as the lamination conditions of the base material and the resin sheet in the circuit board manufacturing method.

  Examples of base materials include silicon wafers; glass wafers; glass substrates; metal substrates such as copper, titanium, stainless steel, cold rolled steel plate (SPCC); Examples include a substrate subjected to thermosetting treatment; a substrate made of bismaleimide triazine resin such as BT resin; and the like.

  The temporary fixing film can be made of any material that can be peeled off from the semiconductor chip and can temporarily fix the semiconductor chip. Examples of commercially available products include “Riva Alpha” manufactured by Nitto Denko Corporation.

(Process (B))
Step (B) is a step of temporarily fixing the semiconductor chip on the temporary fixing film. The temporary fixing of the semiconductor chip can be performed by using a device such as a flip chip bonder or a die bonder, for example. The layout and number of semiconductor chips can be appropriately set according to the shape and size of the temporarily fixed film, the number of target semiconductor packages produced, and the like. For example, the semiconductor chips may be aligned and temporarily fixed in a matrix of a plurality of rows and a plurality of columns.

(Process (C))
Step (C) is a step of forming a sealing layer on the semiconductor chip. A sealing layer is formed with the hardened | cured material of the resin composition for sealing mentioned above. The sealing layer is usually formed by a method including a step of forming a sealing resin composition layer on a semiconductor chip and a step of thermosetting the resin composition layer to form a sealing layer.

  The resin composition layer is preferably formed by a compression molding method utilizing the excellent compression moldability of the sealing resin composition. In the compression molding method, usually, a semiconductor chip and a resin composition are placed in a mold, and a pressure and heat as necessary are applied to the sealing resin composition in the mold to form a resin composition layer covering the semiconductor chip. Form.

  The specific operation of the compression molding method can be as follows, for example. An upper mold and a lower mold are prepared as molds for compression molding. Moreover, the resin composition for sealing is apply | coated to the semiconductor chip temporarily fixed on the temporary fixing film as mentioned above. The semiconductor chip coated with the sealing resin composition is attached to the lower mold together with the base material and the temporary fixing film. Thereafter, the upper mold and the lower mold are clamped, and heat and pressure are applied to the sealing resin composition to perform compression molding.

  The specific operation of the compression molding method may be as follows, for example. An upper mold and a lower mold are prepared as molds for compression molding. The sealing resin composition is placed on the lower mold. Further, the semiconductor chip is attached to the upper mold together with the base material and the temporary fixing film. Thereafter, the upper mold and the lower mold are clamped so that the sealing resin composition placed on the lower mold contacts the semiconductor chip attached to the upper mold, and heat and pressure are applied to perform compression molding.

  The molding conditions vary depending on the composition of the sealing resin composition, and appropriate conditions can be adopted so that good sealing is achieved. For example, the mold temperature during molding is preferably a temperature at which the sealing resin composition can exhibit excellent compression moldability, preferably 80 ° C. or higher, more preferably 100 ° C. or higher, and particularly preferably 120 ° C. or higher. The temperature is preferably 200 ° C. or lower, more preferably 170 ° C. or lower, and particularly preferably 150 ° C. or lower. The pressure applied during molding is preferably 1 MPa or more, more preferably 3 MPa or more, particularly preferably 5 MPa or more, preferably 50 MPa or less, more preferably 30 MPa or less, and particularly preferably 20 MPa or less. The curing time is preferably 1 minute or more, more preferably 2 minutes or more, particularly preferably 5 minutes or more, preferably 60 minutes or less, more preferably 30 minutes or less, particularly preferably 20 minutes or less. Usually, after the resin composition layer is formed, the mold is removed. The removal of the mold may be performed before the thermosetting of the resin composition layer or after the thermosetting.

  The compression molding method may be performed by discharging the sealing resin composition filled in the cartridge to the lower mold. The molding conditions after the formation of the resin composition layer are the same as those in compression molding.

  The resin composition layer may be formed by laminating a resin sheet and a semiconductor chip. For example, the resin composition layer can be formed on the semiconductor chip by thermocompression bonding the resin composition layer of the resin sheet and the semiconductor chip. Lamination of the resin sheet and the semiconductor chip can be usually performed in the same manner as the lamination of the resin sheet and the base material in the circuit board manufacturing method using a semiconductor chip instead of the base material.

  After forming the resin composition layer on the semiconductor chip, the resin composition layer is thermally cured to obtain a sealing layer that covers the semiconductor chip. Thereby, the semiconductor chip is sealed with the cured product of the sealing resin composition. The thermosetting conditions for the resin composition layer may be the same as the thermosetting conditions for the resin composition layer in the method for manufacturing a circuit board. Furthermore, before the resin composition layer is thermally cured, the resin composition layer may be subjected to a preheating treatment in which the resin composition layer is heated at a temperature lower than the curing temperature. The processing conditions for the preheating process may be the same as the preheating process in the circuit board manufacturing method.

(Process (D))
A process (D) is a process of peeling a base material and a temporary fixing film from a semiconductor chip. As the peeling method, it is desirable to adopt an appropriate method according to the material of the temporarily fixed film. As a peeling method, the method of peeling by heating, foaming, or expanding a temporarily fixed film is mentioned, for example. Moreover, as a peeling method, the method of irradiating a temporarily fixed film with an ultraviolet-ray through a base material, reducing the adhesive force of a temporarily fixed film, and peeling is mentioned, for example.

In the method in which the temporarily fixed film is peeled by heating, foaming or expanding, the heating condition is usually 100 ° C. to 250 ° C. for 1 second to 90 seconds or 5 minutes to 15 minutes. Further, in the method for peeling by reducing the adhesive strength of the temporary fixing film by ultraviolet irradiation, irradiation amount of ultraviolet rays is ^{usually, 10mJ / cm 2 ~1000mJ / cm} 2.

(Process (E))
The step (E) is a step of forming a rewiring forming layer as an insulating layer on the surface from which the base material and the temporary fixing film of the semiconductor chip are peeled off.

  As the material for the rewiring layer, any material having an insulating property can be used. Among these, a photosensitive resin and a thermosetting resin are preferable from the viewpoint of easy manufacture of the semiconductor chip package. Moreover, you may use the resin composition for sealing of this invention as this thermosetting resin.

  After forming the rewiring layer, via holes may be formed in the rewiring layer in order to connect the semiconductor chip and the rewiring layer.

  In the method of forming a via hole when the material of the rewiring layer is a photosensitive resin, normally, the surface of the rewiring layer is irradiated with active energy rays through a mask pattern, and the rewiring layer in the irradiated portion is irradiated with light. Harden. Examples of active energy rays include ultraviolet rays, visible rays, electron beams, X-rays and the like, and ultraviolet rays are particularly preferable. The irradiation amount and irradiation time of ultraviolet rays can be appropriately set according to the photosensitive resin. As an exposure method, for example, a contact exposure method in which a mask pattern is brought into close contact with the rewiring formation layer and exposed, a non-contact exposure method in which the mask pattern is exposed using parallel rays without being brought into close contact with the rewiring formation layer, etc. Is mentioned.

  After the rewiring formation layer is photocured, the rewiring formation layer is developed, the unexposed portion is removed, and a via hole is formed. Development may be either wet development or dry development. Examples of the developing method include a dip method, a paddle method, a spray method, a brushing method, a scraping method, and the like, and the paddle method is preferable from the viewpoint of resolution.

  Examples of a method for forming a via hole when the material of the rewiring forming layer is a thermosetting resin include laser irradiation, etching, and mechanical drilling. Among these, laser irradiation is preferable. Laser irradiation can be performed using an appropriate laser processing machine using a light source such as a carbon dioxide laser, a UV-YAG laser, or an excimer laser.

  The shape of the via hole is not particularly limited, but is generally circular (substantially circular). The top diameter of the via hole is preferably 50 μm or less, more preferably 30 μm or less, further preferably 20 μm or less, preferably 3 μm or more, preferably 10 μm or more, more preferably 15 μm or more. Here, the top diameter of the via hole means the diameter of the opening of the via hole on the surface of the rewiring formation layer.

(Process (F))
Step (F) is a step of forming a rewiring layer as a conductor layer on the rewiring formation layer. The method for forming the rewiring layer on the rewiring formation layer can be the same as the method for forming the conductor layer on the insulating layer in the method for manufacturing a circuit board. Alternatively, the step (E) and the step (F) may be repeated to build up the rewiring layer and the rewiring forming layer alternately (build up).

(Process (G))
Step (G) is a step of forming a solder resist layer on the rewiring layer. As the material of the solder resist layer, any material having insulating properties can be used. Among these, a photosensitive resin and a thermosetting resin are preferable from the viewpoint of easy manufacture of the semiconductor chip package. Moreover, you may use the resin composition for sealing of this invention as a thermosetting resin.

  Further, in the step (G), a bumping process for forming bumps may be performed as necessary. The bumping process can be performed by a method such as solder ball or solder plating. In addition, the via hole can be formed in the bumping process in the same manner as in the step (E).

  The manufacturing method of the semiconductor chip package may include a step (H) in addition to the steps (A) to (G). Step (H) is a step of dicing a plurality of semiconductor chip packages into individual semiconductor chip packages and dividing them into individual pieces. A method for dicing the semiconductor chip package into individual semiconductor chip packages is not particularly limited.

  The semiconductor chip package according to the third embodiment of the present invention is, for example, a semiconductor chip package in which the rewiring forming layer or the solder resist layer is formed of a cured product of the resin composition of the present invention in the semiconductor chip package of the second embodiment. It is.

[Semiconductor device]
Examples of the semiconductor device on which the above-described semiconductor chip package is mounted include, for example, electrical products (for example, computers, mobile phones, smartphones, tablet devices, wearable devices, digital cameras, medical devices, and televisions) and vehicles (for example, , Various semiconductor devices used for motorcycles, automobiles, trains, ships, airplanes, and the like).

  Hereinafter, the present invention will be specifically described with reference to examples. However, the present invention is not limited to the following examples. In the following description, “parts” and “%” representing amounts mean “parts by mass” and “% by mass”, respectively, unless otherwise specified. Further, the operations described below were performed in an environment of normal temperature and pressure unless otherwise specified.

<Used inorganic filler>
Silica A: Spherical silica treated with an average particle size of 6.0 μm, maximum cut diameter of 20 μm, specific surface area of 4.8 m ² / g, KBM573 (N-phenyl-3-aminopropyltrimethoxysilane, manufactured by Shin-Etsu Chemical Co., Ltd.) .
Silica B: Spherical silica treated with an average particle diameter of 4.8 μm, a maximum cut diameter of 20 μm, a specific surface area of 3.9 m ² / g, and KBM403 (3-glycidoxypropyltrimethoxysilane, manufactured by Shin-Etsu Chemical Co., Ltd.).
Alumina A: Spherical alumina treated with an average particle size of 4.8 μm, maximum cut diameter of 24 μm, specific surface area of 2.7 m ² / g, KBM573 (N-phenyl-3-aminopropyltrimethoxysilane, manufactured by Shin-Etsu Chemical Co., Ltd.) .

[Preparation of encapsulating resin composition]
<Example 1>
3 parts of glycidylamine type epoxy resin (“EP3980S” manufactured by ADEKA, epoxy equivalent 115 g / eq.), 6 parts of glycidylamine type epoxy resin (“630” manufactured by Mitsubishi Chemical Corporation, 95 g / eq. Of epoxy equivalent), glycidyl dimer acid 2 parts of ester ("JER871" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 412 g / eq.), 4 parts of bisphenol A type epoxy resin ("EXA-850CRP" manufactured by DIC, epoxy equivalent 170-175 g / eq.), Amine-based curing 0.5 parts of an agent (“KAYABOND C-200S” manufactured by Nippon Kayaku Co., Ltd.), 95 parts of alumina A, and 0.4 part of a curing accelerator (“2E4MZ” manufactured by Shikoku Kasei Co., Ltd.) are uniformly dispersed using a mixer. The resin composition for sealing was obtained.

“EP3980S”, “630”, and “KAYABOND C-200S” are represented by the following structural formulas.

<Example 2>
In Example 1, 3 parts of a glycidylamine type epoxy resin (“EP3980S” manufactured by ADEKA, epoxy equivalent 115 g / eq.) Was added to an alicyclic epoxy resin (“CEL2021P” manufactured by Daicel Corporation, 136 g / eq. Epoxy equivalent). Changed to 3 parts, 95 parts alumina A was changed to 83 parts silica A. Except for the above, a sealing resin composition was obtained in the same manner as in Example 1.

“CEL2021P” is represented by the following structural formula.

<Example 3>
In Example 1, 95 parts of alumina A was changed to 83 parts of silica A. Except for the above, a sealing resin composition was obtained in the same manner as in Example 1.

<Example 4>
In Example 1, 95 parts of alumina A was changed to 83 parts of silica B. Except for the above, a sealing resin composition was obtained in the same manner as in Example 1.

<Comparative Example 1>
6 parts of glycidylamine type epoxy resin (ADEKA "EP3980S", epoxy equivalent 115 g / eq.), Dimer acid glycidyl ester (Mitsubishi Chemical "JER871", epoxy equivalent 412 g / eq.) 0.5 part, glycidylamine Type epoxy resin (“630” manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 95 g / eq.) 10 parts, amine-based curing agent (“KAYABOND C-200S” manufactured by Nippon Kayaku Co., Ltd.), 85 parts silica B, curing 0.4 parts of an accelerator (“2E4MZ” manufactured by Shikoku Kasei Co., Ltd.) was uniformly dispersed using a mixer to obtain a sealing resin composition.

<Comparative example 2>
2 parts of glycidylamine type epoxy resin (Mitsubishi Chemical Corporation “630”, epoxy equivalent 95 g / eq.), Dimer acid glycidyl ester (Mitsubishi Chemical Corporation “JER871”, epoxy equivalent 412 g / eq.) 0.5 part, bisphenol Type A epoxy resin (DIC Corporation “EXA-850CRP”, epoxy equivalent 170-175 g / eq.) 13 parts, amine curing agent (Nippon Kayaku Co., Ltd. “KAYABOND C-200S”) 0.5 parts, silica B 85 parts and 0.4 part of a curing accelerator (“2E4MZ” manufactured by Shikoku Kasei Co., Ltd.) were uniformly dispersed using a mixer to obtain a sealing resin composition.

<Comparative Example 3>
In Example 2, 2 parts of dimer acid glycidyl ester (“JER871” manufactured by Mitsubishi Chemical Corporation, epoxy equivalent: 412 g / eq.) Was not added. Except for the above, a sealing resin composition was obtained in the same manner as in Example 2.

[Measurement of elastic modulus]
On the surface of the SUS plate subjected to the mold release treatment, the sealing resin compositions produced in Examples and Comparative Examples were subjected to a compression molding apparatus (mold temperature: 130 ° C., pressure: 6 MPa, cure time: 10 minutes. ) To form a resin composition layer having a thickness of 300 μm. The SUS board was peeled off, and the resin composition layer was thermally cured by heating at 180 ° C. for 90 minutes to obtain a cured product layer of the sealing resin composition. The cured product layer was cut into a dumbbell shape No. 1 to obtain a test piece. The test piece was subjected to tensile strength measurement using a tensile tester “RTC-1250A” manufactured by Orientec Co., Ltd., and the elastic modulus at 25 ° C. was obtained. The measurement was performed according to JIS K7127. This operation was performed 3 times and the average value was shown in the table (unit: GPa).

[Measurement of linear thermal expansion coefficient (CTE)]
On the surface of the SUS plate subjected to the mold release treatment, the sealing resin compositions produced in Examples and Comparative Examples were subjected to a compression molding apparatus (mold temperature: 130 ° C., pressure: 6 MPa, cure time: 10 minutes. ) To form a resin composition layer having a thickness of 300 μm. The SUS board was peeled off, and the resin composition layer was thermally cured by heating at 180 ° C. for 90 minutes to obtain a cured product layer of the sealing resin composition. The cured product layer was cut into a width of 5 mm and a length of 15 mm to obtain a test piece. About this test piece, the thermomechanical analysis was performed with the tension | pulling load method using the thermomechanical analyzer ("Thermo Plus TMA8310" by Rigaku Corporation). Specifically, after the test piece was mounted on the thermomechanical analyzer, the measurement was continuously performed twice under the measurement conditions of a load of 1 g and a heating rate of 5 ° C./min. In the second measurement, the linear thermal expansion coefficient (ppm / ° C.) in the plane direction in the range from 25 ° C. to 150 ° C. was calculated.

[Evaluation of warpage]
The sealing resin compositions produced in Examples and Comparative Examples were compression-molded on a 12-inch silicon wafer using a compression molding apparatus (mold temperature: 130 ° C., pressure: 6 MPa, cure time: 10 minutes). Thus, a resin composition layer having a thickness of 300 μm was formed. Thereafter, the resin composition layer was cured by heating at 180 ° C. for 90 minutes. This obtained the sample substrate containing a silicon wafer and the hardened | cured material layer of the fat composition for tree sealing. The amount of warpage of the sample substrate at 25 ° C. was measured using a shadow moire measuring device (“Thermoire AXP” manufactured by Akorometrics). The measurement was performed in accordance with JEITA EDX-7311-24 of the Japan Electronics and Information Technology Industries Association standard. Specifically, using a virtual plane calculated by the least square method of all data on the substrate surface in the measurement region as a reference plane, the difference between the minimum value and the maximum value in the vertical direction from the reference plane was determined as the amount of warpage. When the warpage amount was less than 2 mm, “◯”, 2 mm or more, and less than 3 mm were judged as “Δ”, and 3 mm or more were judged as “x”.

[Evaluation of thermal cycle test resistance]
Thermal release tape Riba alpha was bonded onto a 12-inch wafer, and a 1 cm × 1 cm × 0.3 mm silicon chip was mounted thereon. The sealing resin compositions prepared in Examples and Comparative Examples were compressed using a compression molding apparatus (mold temperature: 130 ° C., pressure: 6 MPa, cure time: 10 minutes) so that the thickness on the chip was 100 μm. Molded. Subsequently, the sealing resin composition was thermally cured by heating at 150 ° C. for 60 minutes. Ribaalpha was peeled off to obtain a resin wafer embedded with a silicon chip. Using the small thermal shock apparatus “TSE-11” manufactured by Espec Corp., the obtained resin wafer is treated as a cycle of a process of continuously performing a process at −55 ° C. for 30 minutes and a process at 120 ° C. for 30 minutes. A thermal cycle test was performed for 1000 cycles. The interface between the silicon chip and the cured resin composition for sealing was observed by FIB, and “◯” indicates that no delamination occurred, and “X” indicates that delamination occurred.

[Measurement of viscosity]
0.2-0.3 ml of the sealing resin composition to be measured was measured with a syringe using a RE80 viscometer (manufactured by Toki Sangyo Co., Ltd.). During measurement, the temperature of the viscometer measurement chamber was controlled at 25.0 ° C. in an external circulation thermostat. The rotation speed of the rotor was set to 1 rpm, and the viscosity after 120 seconds was measured (unit: Pa · s).

[Measurement of minimum melt viscosity]
The resin composition for sealing 1.2-1.3g produced by the Example and the comparative example was used for the dynamic viscoelasticity measuring apparatus ("Rheosol-G3000 by UBM Co., Ltd.) using a parallel plate with a diameter of 18 mm. )) At a temperature rising rate of 5 ° C./min from a starting temperature of 60 ° C. to 200 ° C., and a dynamic viscoelastic modulus under measurement conditions of a measurement temperature interval of 2.5 ° C., a frequency of 1 Hz, and a strain of 1 deg. Was measured and the minimum melt viscosity (poise) was calculated.

＊表中、（Ｄ）成分の含有量は、封止用樹脂組成物中の不揮発成分を１００質量％とした場合の（Ｄ）成分の含有量を表す。

* In the table | surface, content of (D) component represents content of (D) component when the non-volatile component in the resin composition for sealing is 100 mass%.

  In Examples 1 to 4, it was confirmed that even if the component (E) and the component (F) were not contained, the result was the same as that of the above example although there was a difference in the degree.

Claims (14)

(A) a glycidylamine type epoxy resin,
(B) a glycidyl ester type epoxy resin,
A sealing resin composition comprising (C) a curing agent, and (D) an inorganic filler,
The resin composition for sealing whose content of (A) component is 3 mass% or more and 15 mass% or less when the non-volatile component in the resin composition for sealing is 100 mass%.   The resin composition for sealing according to claim 1, wherein the component (A) is a bifunctional or trifunctional glycidylamine type epoxy resin.   The resin composition for sealing according to claim 1 or 2, wherein the component (B) comprises a dimer acid-modified glycidyl ester type epoxy resin.   When the nonvolatile component in the sealing resin composition is 100% by mass, the content of the component (A) is a1, and when the nonvolatile component in the sealing resin composition is 100% by mass (B) The resin composition for sealing according to any one of claims 1 to 3, wherein a1 / b1 is 0.6 or more and 30 or less when the content of the component is b1.   The content of the component (B) is 0.5% by mass or more and 5% by mass or less when the nonvolatile component in the sealing resin composition is 100% by mass. 2. The sealing resin composition according to 1.   The content of the component (C) is 0.1% by mass or more and 3% by mass or less when the nonvolatile component in the sealing resin composition is 100% by mass. 2. The sealing resin composition according to 1.   (C) Resin composition for sealing of any one of Claims 1-6 in which a component contains an amine-type hardening | curing agent.   (D) Content of a component is 80 to 95 mass% of any one of Claims 1-7 when the non-volatile component in the resin composition for sealing is 100 mass%. Sealing resin composition.   (D) The resin composition for sealing of any one of Claims 1-8 whose average particle diameter of a component is 0.1 micrometer or more and 10 micrometers or less.   (D) The resin composition for sealing of any one of Claims 1-9 whose component is a silica or an alumina.   The sealing resin composition according to any one of claims 1 to 10, which is a liquid sealing resin composition.   The resin composition for sealing of any one of Claims 1-11 whose minimum melt viscosity from 60 degreeC to 200 degreeC of the resin composition for sealing is 50 poise or more and 400 poise or less.   A semiconductor chip comprising: a circuit board; a semiconductor chip mounted on the circuit board; and a cured product of the sealing resin composition according to claim 1 for sealing the semiconductor chip. package.   The semiconductor chip package containing a semiconductor chip and the hardened | cured material of the resin composition for sealing of any one of Claims 1-12 which seals the said semiconductor chip.