JP2019121745A - Semiconductor device and mounting structure of the same - Google Patents

Abstract

To provide a semiconductor device capable of reducing a noise occurred in an outer part and an inner part of a device, and a mounting structure of the semiconductor device.SOLUTION: A semiconductor device comprises: a semiconductor element 10 having a first electrode 11 into which an electric signal is input, and a second electrode 12 in which a current converted based on the electric signal flows to the outer part; a first lead 21 including a first interval 21A extended to a first direction X orthogonal to a thickness direction of the semiconductor element 10, and which is conducted to the first electrode 11; a second lead 22 including a second interval 22A extended to the first direction x, and which is conducted to the second electrode 12; a shielding body 40 which uses a ferrite as a component material and surrounds the circumference of at least one of the first interval 21A and the second interval 22A; and a sealing resin 50 coveting the semiconductor element 10, and the first lead 21 and the second lead 22 one by one. At least one part of the shielding body 40 is covered with the sealing resin 50.SELECTED DRAWING: Figure 2

Description

  The present invention relates to a semiconductor device mounted with a semiconductor element such as a MOSFET and a mounting structure thereof.

  A semiconductor device mounted with a semiconductor element such as a MOSFET is widely known which converts current based on an input electric signal. Such a semiconductor device is used, for example, in an electronic device including a step-up / step-down circuit such as a DC-DC converter. Patent Document 1 discloses an example of a semiconductor device on which a MOSFET is mounted. In the semiconductor device, a gate terminal for inputting an electrical signal to the MOSFET, a source terminal in which a current converted based on the electrical signal flows to the outside, and a current converted based on the electrical signal are directed to the MOSFET And a drain terminal.

  When the semiconductor device disclosed in Patent Document 1 is used as a component of a step-up / step-down circuit, the source terminal is generally arranged in the vicinity of an inductor forming the step-up / step-down circuit. For this reason, the source terminal is susceptible to the noise generated from the inductor, and there is a concern that the flow of the current flowing through the source terminal is impeded. In addition, there is a concern that noise generated from the gate terminal and the source terminal may cause disturbance in the electric signal input to the gate electrode of the MOSFET.

JP 2007-294669 A

  An object of the present invention is to provide a semiconductor device capable of reducing noise generated inside and outside the device, and a mounting structure of the semiconductor device, in view of the above-mentioned circumstances.

  According to a first aspect of the present invention, there is provided a semiconductor element having a first electrode to which an electrical signal is input, and a second electrode through which a current converted based on the electrical signal flows to the outside; It has a first section extending in a first direction orthogonal to the thickness direction, and has a first lead conducting to the first electrode, and a second section extending in the first direction, and the second A second lead electrically connected to the electrode, a shield made of ferrite and surrounding a periphery of at least one of the first section and the second section, the semiconductor element, the first lead, and the first lead And a sealing resin covering a part of each of the two leads, wherein at least a part of the shield is covered with the sealing resin.

  Preferably, in the practice of the present invention, the shield includes a first area surrounding the periphery of the first section, and a second area surrounding the periphery of the second section, and the first area and the second area The areas are spaced apart from one another.

  In the embodiment of the present invention, preferably, the sealing resin has a first side surface and a second side surface facing each other in the first direction, and the first lead and the second lead are of the semiconductor element. The first lead is arranged in a second direction orthogonal to both the thickness direction and the first direction, and a portion of the first lead is formed from the first side in the thickness direction of the semiconductor element. It protrudes in one direction.

  In the embodiment of the present invention, preferably, a part of the second lead protrudes in the first direction from the first side surface as viewed in the thickness direction of the semiconductor element.

  In the embodiment of the present invention, preferably, a part of the second lead protrudes in the first direction from the second side surface in the thickness direction of the semiconductor element.

  In the embodiment of the present invention, preferably, the shield has a first end surface and a second end surface facing opposite to each other in the first direction, and a through hole extending from the first end surface to the second end surface. At least one of the first section and the second section is inserted into the through hole.

  Preferably, in the practice of the present invention, the sealing resin has a covering region located in the through hole and covering at least one of the first section and the second section.

  Preferably in the practice of the present invention, the first end surface and the second end surface are covered with the sealing resin.

  In the practice of the present invention, preferably, the first end face is exposed from at least one of the first side face and the second side face, and the second end face is covered with the sealing resin.

  Preferably, in the practice of the present invention, the shield has a peripheral surface connected to the outer edge of each of the first end surface and the second end surface, and at least a part of the peripheral surface is covered with the sealing resin. ing.

  Preferably, in the practice of the present invention, the area of the first end surface is smaller than the area of the second end surface, and the circumferential surface is inclined with respect to the first direction.

  Preferably, in the practice of the present invention, the shield has a flange which protrudes from the circumferential surface in a direction orthogonal to the first direction and surrounds the circumferential surface, and the flange is formed of the sealing resin. It is covered.

  Preferably in the practice of the present invention, the flange is connected to the outer edge of the second end face.

  Preferably, in the practice of the present invention, the semiconductor device further comprises a die pad on which the semiconductor device is mounted, and the semiconductor device has a third electrode through which a current converted based on the electrical signal flows toward the inside of the semiconductor device. The third electrode is electrically connected to the die pad, and further includes a third lead connected to the die pad.

  Preferably, in the practice of the present invention, the third lead has an exposed portion which protrudes in the first direction from the first side surface as viewed in the thickness direction of the semiconductor element.

  In the embodiment of the present invention, preferably, the third lead has an exposed portion which protrudes in the first direction from the second side surface as viewed in the thickness direction of the semiconductor element.

  According to a second aspect of the present invention, there is provided a semiconductor element having a first electrode to which an electrical signal is input, and a second electrode through which a current converted based on the electrical signal flows to the outside, and the first electrode A semiconductor device including a first lead conducting to the second electrode and a second lead conducting to the second electrode; and a main surface and a back surface facing opposite to each other in a thickness direction, and from the main surface to the back surface A mounting substrate having an opening leading to the opening, and a cylindrical member having ferrite as a constituent material and having a through hole penetrating therethrough, and the mounting substrate so that the through hole overlaps the opening in a thickness direction view of the mounting substrate And at least one of the first lead and the second lead is inserted into both the through hole and the opening, and at least one of the shields. But mounting structure of a semiconductor device characterized by being buried in the mounting substrate from the major surface is provided.

  Preferably, in the practice of the present invention, the shield has an end face facing the side to which the main surface faces in the thickness direction of the mounting substrate, and the end face is flush with the main surface.

  Preferably, in the practice of the present invention, the mounting substrate has a wiring disposed on the back surface, and a conductive for electrically joining at least one of the first lead and the second lead to the wiring. It further comprises a bonding layer.

  According to the semiconductor device of the present invention and the mounting structure of the semiconductor device, it is possible to reduce noise generated outside and inside the semiconductor device.

  Other features and advantages of the present invention will become more apparent from the detailed description given below based on the attached drawings.

FIG. 1 is a perspective view according to a first embodiment of a semiconductor device according to the first aspect of the present invention. It is a top view (permeation of sealing resin) of a semiconductor device shown in FIG. It is a bottom view of the semiconductor device shown in FIG. It is a front view of the semiconductor device shown in FIG. It is sectional drawing in alignment with the VV line | wire of FIG. It is sectional drawing in alignment with the VI-VI line of FIG. It is sectional drawing in alignment with the VII-VII line of FIG. It is sectional drawing which follows the VIII-VIII line of FIG. It is a perspective view of the shield of the semiconductor device shown in FIG. FIG. 7 is a partial enlarged view of FIG. 6 (around the shield). It is a perspective view of the shield concerning the 1st modification of the semiconductor device shown in FIG. FIG. 12 is a partial enlarged cross-sectional view (around the shield) of the semiconductor device shown in FIG. FIG. 20 is a perspective view of a shield according to a second modification of the semiconductor device shown in FIG. 1; FIG. 14 is a partial enlarged cross-sectional view (around the shield) of the semiconductor device shown in FIG. 13; It is a top view (penetration resin is transparent) concerning a 2nd embodiment of a semiconductor device by the 1st side of the present invention. It is a front view of the semiconductor device shown in FIG. It is sectional drawing in alignment with the XVII-XVII line of FIG. It is a perspective view of the shield of the semiconductor device shown in FIG. It is a top view (penetration resin penetrates) concerning a 3rd embodiment of a semiconductor device by the 1st side of the present invention. FIG. 20 is a front view of the semiconductor device shown in FIG. It is sectional drawing which follows the XXI-XXI line of FIG. FIG. 20 is a perspective view of a first lead and a shield of the semiconductor device shown in FIG. 19; It is a top view (penetration resin penetrates) concerning a 4th embodiment of a semiconductor device by the 1st side of the present invention. FIG. 24 is a front view of the semiconductor device shown in FIG. FIG. 24 is a rear view of the semiconductor device shown in FIG. 23; It is sectional drawing in alignment with XXVI-XXVI of FIG. It is sectional drawing in alignment with XXVII-XXVII of FIG. It is a perspective view of the mounting structure of the semiconductor device by the 2nd side of the present invention. FIG. 29 is a plan view of the semiconductor device constituting the mounting structure of the semiconductor device shown in FIG. 28. It is sectional drawing which follows the XXX-XXX line of FIG. FIG. 31 is a cross-sectional view taken along the line XXXI-XXXI of FIG. 30. FIG. 29 is a cross-sectional view of a modification of the mounting structure of the semiconductor device shown in FIG. 28;

  DESCRIPTION OF EMBODIMENTS A mode for carrying out the present invention (hereinafter, referred to as “embodiment”) will be described based on the attached drawings.

<Semiconductor device>
The semiconductor device according to the first aspect of the present invention includes a semiconductor device A10 according to the first embodiment, a semiconductor device A20 according to the second embodiment, and a semiconductor device A30 according to the third embodiment. The semiconductor device A40 according to the fourth embodiment will be described. These semiconductor devices are used, for example, in electronic devices provided with a buck-boost circuit, such as a DC-DC converter.

First Embodiment
The semiconductor device A <b> 10 will be described based on FIGS. 1 to 10. The semiconductor device A 10 includes the die pad 20, the semiconductor element 10, the conductive adhesive layer 19, the first lead 21, the second lead 22, the third lead 23, the first wire 31, the second wire 32, the shield 40, and the sealing resin 50. Equipped with In FIG. 2, for convenience of understanding, the sealing resin 50 is transmitted. In FIG. 2, the sealing resin 50 that has been transmitted is indicated by an imaginary line (two-dot chain line).

  In the description of the semiconductor device A10, for convenience, the thickness direction of the semiconductor element 10 is referred to as "thickness direction z". The direction perpendicular to the thickness direction z and in which the first lead 21, the second lead 22 and the third lead 23 extend is referred to as a “first direction x”. A direction orthogonal to both the thickness direction z and the first direction x will be referred to as a "second direction y". The “thickness direction z”, the “first direction x” and the “second direction y” also apply to the description of the semiconductor device A 20, the semiconductor device A 30 and the semiconductor device A 40 described later.

  The die pad 20 is a conductive member on which the semiconductor element 10 is mounted, as shown in FIGS. 2 and 7. The die pad 20 is composed of the same lead frame as the first lead 21, the second lead 22 and the third lead 23. The constituent material of the lead frame is copper (Cu) or a copper alloy. As shown in FIGS. 2, 3 and 7, the die pad 20 has a pad main surface 20A, a pad back surface 20B and a pad hole 20C. The pad main surface 20A faces upward in FIG. 7 in the thickness direction z. For example, silver (Ag) plating is applied to pad main surface 20A. The pad back surface 20B faces downward in FIG. 7 in the thickness direction z. For example, tin (Sn) plating is applied to the pad back surface 20B. The pad hole 20C penetrates the die pad 20 from the pad main surface 20A to the pad back surface 20B in the thickness direction z. The pad holes 20C are circular in the thickness direction z.

  The semiconductor element 10 is mounted on the pad main surface 20A of the die pad 20, as shown in FIGS. The semiconductor element 10 is, for example, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) whose main component is Si (silicon). The semiconductor element 10 may be an IGBT (Insulated Gate Bipolar Transistor). In the semiconductor device A10 to the semiconductor device A40, the case where the semiconductor element 10 is an n-channel MOSFET will be described. As shown in FIG. 8, the semiconductor element 10 has an element main surface 10A, an element back surface 10B, a first electrode 11, a second electrode 12, and a third electrode 13. The element main surface 10A faces the side to which the pad main surface 20A faces in the thickness direction z. The element back surface 10B faces the opposite side of the element main surface 10A in the thickness direction z.

  As shown in FIGS. 2 and 8, the first electrode 11 is provided on the element major surface 10A. An electrical signal for driving the semiconductor element 10 is input to the first electrode 11. That is, the electric signal is a gate voltage, and the first electrode 11 corresponds to a gate electrode.

  As shown in FIGS. 2 and 8, the second electrode 12 is provided on the element major surface 10 </ b> A. The current converted by the semiconductor element 10 flows to the outside of the semiconductor element 10 in the second electrode 12 based on the electrical signal input to the first electrode 11. That is, the current is a source current, and the second electrode 12 corresponds to a source electrode. In the thickness direction z, the area of the second electrode 12 is larger than the area of the first electrode 11.

  As shown in FIG. 8, the third electrode 13 is provided so as to cover the entire element back surface 10 </ b> B. In the third electrode 13, the current converted by the semiconductor element 10 flows toward the inside of the semiconductor element 10 based on the electric signal input to the first electrode 11. That is, the current is a drain current, and the third electrode 13 corresponds to the drain electrode.

  The conductive adhesive layer 19 is a conductive member interposed between the pad main surface 20A of the die pad 20 and the third electrode 13 of the semiconductor element 10, as shown in FIG. The conductive adhesive layer 19 is, for example, a lead-free solder whose main component is tin. The semiconductor element 10 is mounted on the pad main surface 20 A by die bonding using the conductive adhesive layer 19. Thereby, the third electrode 13 is electrically joined to the pad main surface 20 A and is electrically connected to the die pad 20 via the conductive adhesive layer 19.

  The first lead 21 extends to the side away from the die pad 20 in the first direction x, as shown in FIGS. 2, 3 and 5. The first lead 21 is electrically connected to the first electrode 11 of the semiconductor element 10 through the first wire 31. Therefore, a gate voltage for driving the semiconductor element 10 is applied to the first lead 21.

  As shown in FIGS. 2 and 5, in the semiconductor device A <b> 10, the first lead 21 has a connection portion 211 and an extension portion 212. The connection portion 211 has a substantially rectangular shape extending in the second direction y. Silver plating, for example, is applied to the surface of the connection portion 211 facing the side to which the pad main surface 20A of the die pad 20 faces in the thickness direction z. The extension portion 212 extends from the connection portion 211 to the side away from the die pad 20 in the first direction x. A part of the extension part 212 is exposed from the sealing resin 50, and is, for example, tin-plated.

  As shown in FIGS. 2 and 5, the first lead 21 has a first section 21A extending in the first direction x. In the semiconductor device A10, a part of the extension part 212 corresponds to the first section 21A.

  The second lead 22 extends to the side away from the die pad 20 in the first direction x, as shown in FIGS. 2, 3 and 6. In the semiconductor device A10, the second lead 22 extends to the side where the first lead 21 extends. The second lead 22 is electrically connected to the second electrode 12 of the semiconductor element 10 via the second wire 32. Therefore, a source current flows from the semiconductor element 10 to the outside of the semiconductor device A10 through the second lead 22. In the semiconductor device A10, the first leads 21 and the second leads 22 are arranged in the second direction y.

  As shown in FIGS. 2 and 6, in the semiconductor device A <b> 10, the second lead 22 has a connection portion 221 and an extension portion 222. The connection portion 221 has a substantially rectangular shape extending in the second direction y. Silver plating, for example, is applied to the surface of the connection portion 221 facing the side to which the pad main surface 20A of the die pad 20 faces in the thickness direction z. The extension portion 222 extends from the connection portion 221 in the first direction x to the side away from the die pad 20 and to the side in which the extension portion 212 of the first lead 21 extends. A partial section of the extension portion 222 is exposed from the sealing resin 50, and for example, tin plating is applied thereto.

  As shown in FIGS. 2 and 6, the second lead 22 has a second section 22A extending in the first direction x. In the semiconductor device A10, a part of the extension part 222 corresponds to the second section 22A.

  The third lead 23 is connected to the die pad 20 as shown in FIGS. 2, 3 and 7. In the semiconductor device A10, the third lead 23 extends from the die pad 20 to the side in which both the first lead 21 and the second lead 22 extend in the first direction x. In the semiconductor device A10, the third lead 23 is located between the first lead 21 and the second lead 22 in the second direction y. The third lead 23 is electrically connected to the third electrode 13 of the semiconductor element 10 through the conductive adhesive layer 19 and the die pad 20. Therefore, a drain current flows from the outside of the semiconductor device A 10 to the inside of the semiconductor element 10 through the third lead 23.

  As shown in FIGS. 2 and 7, in the semiconductor device A <b> 10, the third lead 23 has a covering portion 231 and an exposed portion 232. The covering portion 231 is covered with the sealing resin 50. The covering portion 231 extends in the first direction x in the thickness direction z and connects the die pad 20 and the exposed portion 232 to each other. The covering portion 231 is bent upward from the die pad 20 to the exposed portion 232 in the thickness direction z. The exposed portion 232 extends in a direction in which both the extending portion 212 of the first lead 21 and the extending portion 222 of the second lead 22 extend in the first direction x. The exposed portion 232 is exposed from the sealing resin 50 and, for example, is tin-plated.

  As shown in FIG. 2, the first wire 31 is a conductive member that connects the first electrode 11 of the semiconductor element 10 and the connection portion 211 of the first lead 21. The first lead 21 is electrically connected to the first electrode 11 by the first wire 31. The constituent material of the first wire 31 is, for example, gold (Au).

  The second wire 32 is a conductive member that connects the second electrode 12 of the semiconductor element 10 and the connection portion 221 of the second lead 22 as shown in FIG. The second lead 22 is electrically connected to the second electrode 12 by the second wire 32. The constituent material of the second wire 32 is, for example, aluminum (Al). The area of the cross section of the second wire 32 is larger than the area of the cross section of the first wire 31.

  The shield 40 surrounds at least one of the first section 21A of the first lead 21 and the second section 22A of the second lead 22 as shown in FIGS. 2 to 6. In the semiconductor device A10, the shield 40 includes a first region 40A surrounding the periphery of the first section 21A and a second region 40B surrounding the periphery of the second area 22A. The first area 40A and the second area 40B are separated from each other in the second direction y. The shield 40 may have a configuration of only one of the first region 40A and the second region 40B, depending on the use environment of the semiconductor device A10 and the like. The constituent material of the shield 40 is ferrite. Ferrite is a ceramic containing iron oxide as a main component and exhibits magnetism. The ferrite used for the constituent material of the shield 40 is soft ferrite. Soft ferrite is a material exhibiting soft magnetism and having excellent magnetic properties in a high frequency region. In soft ferrite, iron oxide contains manganese (Mn), nickel (Ni), zinc (Zn) and the like.

  As shown in FIGS. 9 and 10, in the semiconductor device A10, the shield 40 has a first end surface 411, a second end surface 412, a circumferential surface 42, and a through hole 43. The first end surface 411 and the second end surface 412 face opposite to each other in the first direction x. The first end face 411 faces away from the die pad 20 in the first direction x. The outer edges of the first end surface 411 and the second end surface 412 are circular. The circumferential surface 42 is connected to the outer edge of each of the first end surface 411 and the second end surface 412. The circumferential surface 42 is a curved surface. The through hole 43 penetrates the shield 40 from the first end surface 411 to the second end surface 412 in the first direction x. The through hole 43 has a uniform circular shape in the first direction x view. Thus, the first end surface 411 and the second end surface 412 are annular. In the through hole 43, at least one of the first section 21A of the first lead 21 and the second section 22A of the second lead 22 is inserted. In the semiconductor device A10, the first section 21A is inserted into the through hole 43 of the first region 40A, and the second section 22A is inserted into the through hole 43 of the second region 40B.

  At least a part of the shield 40 is covered by the sealing resin 50. As shown in FIG. 10, in the semiconductor device A10, the second end surface 412 and the circumferential surface 42 are covered with the sealing resin 50. The first end surface 411 is exposed from the sealing resin 50. In the semiconductor device A <b> 10, the area of the first end surface 411 is smaller than the area of the second end surface 412. The circumferential surface 42 is inclined with respect to the first direction x. Thus, the shield 40 has a configuration in which the circumferential surface 42 is tapered from the second end surface 412 to the first end surface 411 in the first direction x.

  The sealing resin 50 covers the semiconductor element 10 and a part of each of the die pad 20, the first lead 21, the second lead 22 and the third lead 23, as shown in FIGS. The constituent material of the sealing resin 50 is, for example, a black epoxy resin. As shown in FIGS. 3 to 10 (except for FIGS. 8 and 9), the sealing resin 50 has a top surface 51, a bottom surface 52, a first side 531, a second side 532, a body hole 54 and a covering area 55. Have.

  As shown in FIGS. 5 to 7, the top surface 51 faces the side to which the pad main surface 20 </ b> A of the die pad 20 faces in the thickness direction z. As shown in FIGS. 5 to 7, the bottom surface 52 faces away from the top surface 51 in the thickness direction z. From the bottom surface 52, the pad back surface 20B of the die pad 20 is exposed.

  As shown in FIGS. 3 to 7, the first side surface 531 and the second side surface 532 face away from each other in the first direction x. Both ends in the thickness direction z of each of the first side surface 531 and the second side surface 532 are connected to the top surface 51 and the bottom surface 52. In the semiconductor device A10, each of the extension part 212 of the first lead 21 and a part of the extension part 222 of the second lead 22 in the thickness direction z and the exposed part 232 of the third lead 23 It protrudes from the side surface 531 in the first direction x. Further, in the semiconductor device A <b> 10, the first end surface 411 of the shield 40 is exposed from the first side surface 531.

  As shown in FIGS. 3 and 7, the main body hole 54 extends from the top surface 51 to the bottom surface 52 in the thickness direction z and penetrates the sealing resin 50. In the thickness direction z, the main body hole 54 is included in the pad hole 20C of the die pad 20.

  As shown in FIG. 10, the covering area 55 is a part of the sealing resin 50 located in the through hole 43 of the shield 40. The covering region 55 covers at least one of the first section 21A of the first lead 21 and the second section 22A of the second lead 22. In the semiconductor device A10, the covering area 55 located in the through hole 43 of the first area 40A covers the first section 21A, and the covering area 55 located in the through hole 43 of the second area 40B is the second area 22A. Covering.

(First modification)
Next, a semiconductor device A11 according to a first modification of the semiconductor device A10 will be described based on FIG. 11 and FIG.

  In the semiconductor device A11, the configuration of the shield 40 is different from that of the semiconductor device A10 described above. As shown in FIGS. 11 and 12, in the shield 40, the area of the first end surface 411 is the same as the area of the second end surface 412. Thus, in the shield 40 of the semiconductor device A11, the circumferential surface 42 is not tapered from the second end surface 412 to the first end surface 411 in the first direction x.

  In the semiconductor device A11, the shield 40 has a flange 44. The flange 44 protrudes from the circumferential surface 42 in a direction (a radial direction of each of the first end surface 411 and the second end surface 412) orthogonal to the first direction x. The flange 44 has an annular shape surrounding the circumferential surface 42. As shown in FIG. 12, the flange 44 is covered with the sealing resin 50.

(2nd modification)
Next, a semiconductor device A12 according to a second modification of the semiconductor device A10 will be described based on FIG. 13 and FIG.

  In the semiconductor device A12, the configuration of the flange 44 of the shield 40 is different from that of the semiconductor device A11 described above. As shown in FIGS. 13 and 14, in the semiconductor device A12, the flange 44 is connected to the outer edge of the second end surface 412. For this reason, the second end surface 412 constitutes a part of the flange 44. The flange 44 is covered by the sealing resin 50.

  Next, the function and effect of the semiconductor device A10 will be described.

  The semiconductor device A10 includes a shield 40 surrounding at least one of the first section 21A of the first lead 21 and the second section 22A of the second lead 22. The constituent material of the shield 40 is ferrite. Since the sealing resin 50 covers at least a part of the shield 40, the shield 40 is configured to be held by the semiconductor device A10. Thus, noise generated from an inductor or the like disposed outside the semiconductor device A10 is absorbed by the shield 40. In addition, since the noise caused by the gate voltage applied to the first lead 21 and the source current flowing through the second lead 22 is absorbed by the shield 40, the noise generated from the inside of the semiconductor device A10 is reduced. Therefore, according to the semiconductor device A10, it is possible to reduce noise generated outside and inside the semiconductor device A10.

  When the first region 40A of the shield 40 surrounds the first section 21A of the first lead 21, noise due to the gate voltage applied to the first lead 21 and the source current flowing through the second lead 22 can be obtained. The resulting noise is absorbed by the first region 40A. Thereby, the disturbance of the electrical signal input to the first electrode 11 of the semiconductor element 10 can be reduced.

  When the second region 40B of the shield 40 surrounds the second section 22A of the second lead 22, noise caused by the source current flowing through the second lead 22, an inductor disposed outside the semiconductor device A10, etc. The noise generated from is absorbed by the second region 40B. Thereby, the inductance in the second lead 22 is reduced, and the source current easily flows in the second lead 22.

  The shield 40 has a through hole 43 extending from the first end surface 411 to the second end surface 412 in the first direction x. At least one of the first section 21 A of the first lead 21 and the second section 22 A of the second lead 22 is inserted into the through hole 43. Thus, in the manufacture of the semiconductor device A10, the shield 40 can surround the periphery of at least one of the first section 21A and the second section 22A by a relatively simple method.

  In the shield 40 of the semiconductor device A <b> 10, the area of the first end surface 411 is smaller than the area of the second end surface 412. The circumferential surface 42 of the shield 40 is inclined with respect to the first direction x. Thus, the area of the cross section of the shield 40 orthogonal to the first direction x gradually decreases from the second end surface 412 to the first end surface 411. For this reason, even when the shield 40 tries to come out of the sealing resin 50 in the first direction x, the circumferential surface 42 comes in contact with the sealing resin 50, and the shield 40 is removed from the sealing resin 50. It can prevent falling off.

  The shield 40 of the semiconductor device A11 and the semiconductor device A12 has a flange 44 that protrudes from the circumferential surface 42 in a direction orthogonal to the first direction x. As a result, even when the shield 40 tries to come out of the sealing resin 50 in the first direction x, the flange 44 comes in contact with the sealing resin 50, and the shield 40 falls off from the sealing resin 50. Can be prevented.

  The sealing resin 50 has a covered area 55 located in the through hole 43 of the shield 40. As a result, the contact area of the shield 40 with the sealing resin 50 is increased, so that the shield 40 can be held more firmly in the semiconductor device A10.

Second Embodiment
The semiconductor device A <b> 20 will be described based on FIGS. 15 to 18. In these drawings, elements which are the same as or similar to those of the semiconductor device A10 described above are denoted by the same reference numerals, to omit redundant description. In FIG. 15, for convenience of understanding, the sealing resin 50 is transmitted. In FIG. 15, the sealing resin 50 which has permeated is shown by an imaginary line.

  In the semiconductor device A20, the configurations of the shield 40 and the sealing resin 50 are different from those of the semiconductor device A10 described above.

  As shown in FIGS. 17 and 18, in the shield 40 of the semiconductor device A 20, the area of the first end surface 411 is the same as the area of the second end surface 412. The circumferential surface 42 is along the first direction x. Thus, the shield 40 has a cylindrical shape.

  As shown in FIGS. 15 to 17, the sealing resin 50 covers the first end surface 411 and the second end surface 412 and the circumferential surface 42. In the semiconductor device A20, the shield 40 includes a first region 40A and a second region 40B. The first section 21A of the first lead 21 is inserted into the through hole 43 of the first region 40A. The second section 22A of the second lead 22 is inserted into the through hole 43 of the second region 40B. A covering region 55 of the sealing resin 50 is provided in the through holes 43 of each of the first region 40A and the second region 40B. In addition, according to the use environment of semiconductor device A20, etc., the shield 40 may have a configuration of only one of the first region 40A and the second region 40B.

  Next, the function and effect of the semiconductor device A20 will be described.

  The semiconductor device A20 includes the shield 40 surrounding the periphery of at least one of the first section 21A of the first lead 21 and the second section 22A of the second lead 22 as in the configuration of the semiconductor device A10 described above. The constituent material of the shield 40 is ferrite. The shield 40 is configured to be held in the semiconductor device A 20 by the sealing resin 50. Therefore, the semiconductor device A20 can also reduce noise generated outside and inside the semiconductor device A20.

  In the shield 40, the first end surface 411 and the second end surface 412 are covered with the sealing resin 50. As a result, even when the shield 40 tries to come out of the sealing resin 50 in the first direction x, the first end face 411 comes in contact with the sealing resin 50, and the shield 40 becomes the sealing resin 50. Can be prevented from falling out of

Third Embodiment
The semiconductor device A30 will be described based on FIG. 19 to FIG. In these drawings, elements which are the same as or similar to those of the semiconductor device A10 described above are denoted by the same reference numerals, to omit redundant description. Note that FIG. 19 transmits the sealing resin 50 for the convenience of understanding. In FIG. 19, the penetrating sealing resin 50 is shown by an imaginary line.

  In the semiconductor device A30, the configuration of the shield 40 is different from that of the semiconductor device A10 described above.

  As shown in FIGS. 20 to 22, in the shield 40 of the semiconductor device A 30, at least one of the first section 21A of the first lead 21 and the second section 22A of the second lead 22 has a through hole 43. Contact all the way around. The shield 40 of the semiconductor device A30 is directly coated with a clay-like ferrite raw material containing iron oxide or the like so as to cover the entire circumference of at least one of the first section 21A and the second section 22A. It is formed by firing.

  As shown in FIG. 22, the shield 40 of the semiconductor device A30 has a substantially cylindrical shape. The shape of the shield 40 can be freely set regardless of this.

  As shown in FIG. 21, the sealing resin 50 covers the second end surface 412 and the circumferential surface 42. The first end surface 411 of the shield 40 is exposed from the first side surface 531 of the sealing resin 50. In the semiconductor device A30, the shield 40 includes a first region 40A and a second region 40B. In the through holes 43 of the first area 40A and the second area 40B, the covering area 55 of the sealing resin 50 is not provided. The shield 40 may have a configuration of only one of the first region 40A and the second region 40B depending on the use environment of the semiconductor device A30.

  Next, the function and effect of the semiconductor device A30 will be described.

  The semiconductor device A30 includes the shield 40 surrounding the periphery of at least one of the first section 21A of the first lead 21 and the second section 22A of the second lead 22 similarly to the configuration of the semiconductor device A10 described above. The constituent material of the shield 40 is ferrite. The shield 40 is configured to be held in the semiconductor device A 30 by the sealing resin 50. Therefore, the semiconductor device A30 can also reduce noise generated outside and inside the semiconductor device A30.

  In the shield 40 of the semiconductor device A30, at least one of the first section 21A of the first lead 21 and the second section 22A of the second lead 22 penetrates without the covering region 55 of the sealing resin 50 being interposed. The entire circumference of the hole 43 is in contact. Thereby, noise due to the gate voltage applied to the first lead 21 and noise due to the source current flowing through the second lead 22 can be absorbed by the shield 40 more efficiently.

  The through hole 43 of the shield 40 is in contact with the entire circumference of at least one of the first section 21A of the first lead 21 and the second section 22A of the second lead 22. Thus, the shield 40 is supported by both the first section 21A and the sealing resin 50, or both the second section 22A and the sealing resin 50. Therefore, the shield 40 can be firmly held by the semiconductor device A30.

Fourth Embodiment
The semiconductor device A40 will be described based on FIG. 23 to FIG. In these drawings, elements which are the same as or similar to those of the semiconductor device A10 described above are denoted by the same reference numerals, to omit redundant description. In FIG. 23, for convenience of understanding, the sealing resin 50 is transmitted. In FIG. 23, the sealing resin 50 which has permeated is shown by an imaginary line.

  In the semiconductor device A40, the configurations of the die pad 20, the first lead 21, the second lead 22, the third lead 23, and the shield 40 are different from those of the semiconductor device A10 described above.

  As shown in FIG. 23, in the semiconductor device A40, the die pad 20 includes a first region 201 and a second region 202 which are separated from each other in the second direction y. In the semiconductor device A40, the semiconductor element 10 includes a first element 101 and a second element 102. The first element 101 is electrically connected to the pad main surface 20 A of the first region 201, and the second element 102 is electrically connected to the pad main surface 20 A of the second region 202. Further, in the semiconductor device A40, each of the first lead 21, the second lead 22 and the third lead 23 is provided in a pair. One of the first lead 21, the second lead 22 and the third lead 23 is electrically connected to the first element 101 through the first wire 31, the second wire 32 and the first region 201, respectively. The other of the first lead 21, the second lead 22 and the third lead 23 is electrically connected to the second element 102 through the first wire 31, the second wire 32 and the second region 202, respectively.

  As shown in FIGS. 24 and 26, the extension 212 of the first lead 21 has a first extension 212A, a second extension 212B, and a third extension 212C. The first extending portion 212 </ b> A extends from the connecting portion 211 in the first direction x to the side away from the die pad 20. In the semiconductor device A40, a part of the first extending portion 212A corresponds to the first section 21A. The second extension 212B extends from the first extension 212A in the thickness direction z to the side to which the pad back surface 20B of the die pad 20 faces. The third extending portion 212C extends from the second extending portion 212B in the same direction as the first extending portion 212A. Thereby, the extension part 212 is in a bowl shape in the second direction y. A part of the first extending portion 212A and the second extending portion 212B and the third extending portion 212C are exposed from the sealing resin 50, and for example, tin plating is applied to them.

  As shown in FIGS. 24, 25 and 27, the extension 222 of the second lead 22 has a first extension 222A, a second extension 222B, and a third extension 222C. The first extending portion 222 </ b> A extends from the connecting portion 221 in the first direction x to the side away from the die pad 20. In the semiconductor device A40, a part of the first extending portion 222A corresponds to the second section 22A. The second extending portion 222B extends from the first extending portion 222A in the thickness direction z to the side to which the pad back surface 20B of the die pad 20 faces. The third extending portion 222C extends from the second extending portion 222B in the same direction as the first extending portion 222A. Thereby, the extension part 222 is in a bowl shape in the thickness direction z. A part of the first extending portion 222A and the second extending portion 222B and the third extending portion 222C are exposed from the sealing resin 50, and for example, tin plating is applied to them.

  As shown in FIGS. 25 and 26, the exposed portion 232 of the third lead 23 has a first extending portion 232A, a second extending portion 232B, and a third extending portion 232C. The first extending portion 222 </ b> A extends from the covering portion 231 in the first direction x to the side away from the die pad 20. The second extending portion 232B extends from the first extending portion 232A in the thickness direction z to the side to which the pad back surface 20B of the die pad 20 faces. The third extending portion 232C extends from the second extending portion 232B in the same direction as the first extending portion 232A. Thus, the exposed portion 232 has a bowl shape in the thickness direction z. Further, in the semiconductor device A40, the covering portion 231 of the third lead 23 is flat without bending in the thickness direction z.

  As shown in FIG. 23, the first lead 21 and the second lead 22 electrically connected to the first element 101 are the side where the first side surface 531 of the sealing resin 50 is located with respect to the first region 201 in the first direction x. Is located in The third lead 23 electrically connected to the first element 101 is disposed on the side where the second side surface 532 of the sealing resin 50 is located with respect to the first region 201 in the first direction x. Thereby, in the thickness direction z, a part of each of the extension part 212 of the first lead 21 and the extension part 222 of the second lead 22 electrically connected to the first element 101 is the first side face from the first side face 531. Protruding in the direction x. In the thickness direction z, the exposed portion 232 of the third lead 23 electrically connected to the first element 101 protrudes from the second side surface 532 in the first direction x.

  As shown in FIG. 23, the first lead 21 electrically connected to the second element 102 is disposed on the side where the first side surface 531 of the sealing resin 50 is located with respect to the second region 202 in the first direction x. . The second lead 22 and the third lead 23 electrically connected to the second element 102 are arranged on the side where the second side surface 532 of the sealing resin 50 is located with respect to the second region 202 in the first direction x. Thereby, in the thickness direction z, a part of the extending portion 212 of the first lead 21 electrically connected to the second element 102 protrudes from the first side surface 531 in the first direction x. In the thickness direction z, a part of the extending portion 222 of the second lead 22 electrically connected to the second element 102 and the exposed portion 232 of the third lead 23 project in the first direction x from the second side surface 532 There is.

  As shown in FIG. 23, in the semiconductor device A40, the pad holes 20C are not provided in each of the first region 201 and the second region 202. Further, as shown in FIG. 27, the pad back surface 20B of each of the first region 201 and the second region 202 is covered with the sealing resin 50.

  As shown in FIGS. 24 to 26, the configuration of the shield 40 is the same as the configuration of the shield 40 according to the above-described semiconductor device A30 shown in FIG. Therefore, the description of the configuration of the shield 40 is omitted.

  As shown in FIGS. 23-25, in the semiconductor device A40, the shield 40 includes a pair of first regions 40A and a pair of second regions 40B. The first end surface 411 of each first region 40A is exposed from the first side surface 531 of the sealing resin 50. In addition, the first end surface 411 of one second region 40B is exposed from the first side surface 531, and the first end surface 411 of the other second region 40B is exposed from the second side surface 532 of the sealing resin 50. ing. In addition, according to the use environment of semiconductor device A40, etc., the shield 40 may have a configuration of only one of the first region 40A and the second region 40B.

  Next, the function and effect of the semiconductor device A40 will be described.

  The semiconductor device A40 includes the shield 40 surrounding the periphery of at least one of the first section 21A of the first lead 21 and the second section 22A of the second lead 22 as in the configuration of the semiconductor device A10 described above. The constituent material of the shield 40 is ferrite. The shield 40 is configured to be held in the semiconductor device A 40 by the sealing resin 50. Therefore, the semiconductor device A40 can also reduce noise generated outside and inside the semiconductor device A40.

<Mounting structure of semiconductor device>
A mounting structure B10 which is an embodiment of a mounting structure of the semiconductor device (hereinafter abbreviated as "mounting structure") according to the second aspect of the present invention will be described based on FIGS.

  The mounting structure B10 includes a semiconductor device C10, a mounting substrate 60, a shield 40, and a conductive bonding layer 70. In FIG. 29, for convenience of understanding, the sealing resin 50 is transmitted. In FIG. 29, the transparent sealing resin 50 is shown by an imaginary line.

  In the description of the mounting structure B10, for convenience, the thickness direction of the mounting substrate 60 is referred to as "thickness direction z". The thickness direction of the semiconductor device C10, which is orthogonal to the thickness direction z, is referred to as "first direction x". A direction orthogonal to both the thickness direction z and the first direction x will be referred to as a "second direction y".

  As shown in FIG. 29, in the semiconductor device C10, the shield 40 is not provided to the above-described semiconductor device A10 shown in FIG. Further, in the semiconductor device C10, the lengths of the extension portion 212 of the first lead 21 exposed from the sealing resin 50, the extension portion 222 of the second lead 22, and the exposed portion 232 of the third lead 23 are semiconductor devices. It is shorter than these lengths in A10. The configuration of the other semiconductor device C10 is the same as that of the semiconductor device A10.

  The mounting substrate 60 is an insulating member on which the semiconductor device C10 is to be mounted, as shown in FIGS. 28, 30, and 31. The constituent material of the mounting substrate 60 is, for example, glass epoxy resin. The mounting substrate 60 has a main surface 60A, a back surface 60B, an opening 61, and a wire 62. The main surface 60A faces the side where the semiconductor device C10 is located in the thickness direction z. The back surface 60B faces the opposite side to the main surface 60A in the thickness direction z. The opening 61 penetrates the mounting substrate 60 from the main surface 60A to the back surface 60B in the thickness direction z. The opening 61 is circular in the thickness direction z. In the mounting structure B10, the opening 61 has three regions. The wiring 62 is disposed on the back surface 60B. The constituent material of the wiring 62 is, for example, copper.

  The shield 40 is supported by the mounting substrate 60 as shown in FIGS. 28 and 31. The constituent material of the shield 40 is the same as the shield 40 of the semiconductor device A10 described above. The shield 40 is cylindrical. As shown in FIGS. 31 and 32, the shield 40 has an end surface 41, a circumferential surface 42 and a through hole 43. It has an end face 41, a circumferential surface 42 and a through hole 43. The end surface 41 faces the side to which the main surface 60A of the mounting substrate 60 faces in the thickness direction z. In the mounting structure B10, the end surface 41 is annular. The circumferential surface 42 is connected to the outer edge of the end surface 41 and directed in the direction orthogonal to the thickness direction z. The through hole 43 penetrates the shield 40 from the end surface 41 in the thickness direction z. In the mounting structure B10, the through holes 43 have a uniform circular shape in the thickness direction z. Thus, in the mounting structure B10, the shield 40 is cylindrical. In the shield 40, the through hole 43 overlaps the opening 61 of the mounting substrate 60 in the thickness direction z. The shield 40 is intruded into the opening 61 in the thickness direction z. In the mounting structure B10, a part of the shield 40 is embedded in the mounting substrate 60 from the main surface 60A, and the other part of the shield 40 protrudes in the thickness direction z from the main surface 60A. .

  As shown in FIG. 31, at least one of the first lead 21 and the second lead 22 of the semiconductor device C10 is inserted into both the through hole 43 of the shield 40 and the opening 61 of the mounting substrate 60. In the mounting structure B10, the shield 40 includes a first area 40A and a second area 40B separated from each other in the second direction y. The first lead 21 is inserted into both the through hole 43 and the opening 61 of the first region 40A. The second lead 22 is inserted into both the through hole 43 and the opening 61 of the second region 40B. The first side surface 531 of the sealing resin 50 of the semiconductor device C <b> 10 is in contact with the end surface 41 of the shield 40. The shield 40 may have a configuration of only one of the first region 40A and the second region 40B depending on the use environment of the semiconductor device C10 and the like. Further, as shown in FIGS. 30 and 31, the third lead 23 of the semiconductor device C10 is inserted into the opening 61.

  The conductive bonding layer 70 electrically bonds at least one of the first lead 21 and the second lead 22 of the semiconductor device C10 to the wiring 62 of the mounting substrate 60, as shown in FIG. The constituent material of the conductive bonding layer 70 is, for example, a cream solder. In the mounting structure B10, the first lead 21 and the second lead 22 and the third lead 23 of the semiconductor device C10 are electrically joined to the wiring 62 by the conductive joint layer 70.

(Modification)
Next, a mounting structure B11 according to a modification of the mounting structure B10 will be described based on FIG. The sectional position of FIG. 32 is the same as the sectional position of FIG.

  In the mounting structure B11, the support form of the shield 40 with respect to the mounting substrate 60 is different from the mounting structure B10 described above. As shown in FIG. 32, the end face 41 of the shield 40 is flush with the main surface 60A of the mounting substrate 60. For this reason, in the mounting structure B11, the shield 40 does not protrude in the thickness direction z from the main surface 60A.

  Next, the operation and effect of the mounting structure B10 will be described.

  The mounting structure B <b> 10 includes a shield 40 whose component material is ferrite and having the through holes 43. At least a part of the shield 40 is embedded inside the mounting substrate 60 in a state where the through holes 43 overlap the openings 61 of the mounting substrate 60 in the thickness direction z. In such a configuration, at least one of the first lead 21 and the second lead 22 of the semiconductor device C10 is inserted into both the through hole 43 and the opening 61. As a result, noise generated from an inductor or the like disposed on the mounting substrate 60 is absorbed by the shield 40. In addition, since the noise caused by the gate voltage applied to the first lead 21 and the source current flowing through the second lead 22 is absorbed by the shield 40, the noise generated from the inside of the semiconductor device C10 is reduced. Therefore, according to the mounting structure B10, it is possible to reduce noise generated outside and inside the semiconductor device C10.

  By inserting the first lead 21 into the through hole 43 in the first region 40A of the shield 40, noise due to the gate voltage applied to the first lead 21 or the source current flowing through the second lead 22 Noise is absorbed by the first region 40A. Thereby, the disturbance of the electrical signal input to the first electrode 11 of the semiconductor element 10 can be reduced.

  By inserting the second lead 22 into the through hole 43 in the second region 40 B of the shield 40, noise caused by the source current flowing through the second lead 22 or noise generated from an inductor or the like disposed on the mounting substrate 60 Noise is absorbed by the second region 40B. Thereby, the inductance in the second lead 22 is reduced, and the source current easily flows in the second lead 22.

  The mounting substrate 60 has the wiring 62 disposed on the back surface 60B. Thereby, even when the first lead 21 and the second lead 22 of the semiconductor device C10 are inserted into both the through hole 43 of the shield 40 and the opening 61 of the mounting substrate 60, the first lead 21 and the The conduction between the lead 22 and the wire 62 can be achieved.

  In the mounting structure B10, the first side surface 531 of the sealing resin 50 of the semiconductor device C10 is in contact with the end surface 41 of the shield 40. Thus, the lengths of the first lead 21, the second lead 22 and the third lead 23 of the semiconductor device C10 can be made shorter than those in the semiconductor device A10 described above. Further, as in the mounting structure B11, the shield 40 is supported by the mounting substrate 60 such that the end surface 41 is flush with the main surface 60A of the mounting substrate 60, whereby the first lead 21, the second lead 22, and The length of the third lead 23 can be further shortened.

  The present invention is not limited to the embodiments described above. The specific configuration of each part of the present invention can be varied in design in many ways.

A10, A11, A12, A20, A30, A40: semiconductor device B10, B11: mounting structure C10: semiconductor device 10: semiconductor element 101: first element 102: second element 10A: element main surface 10B: element back surface 11: second 1 electrode 12: second electrode 13: third electrode 19: conductive adhesive layer 20: die pad 201: first region 202: second region 20A: pad main surface 20B: pad back surface 20C: pad hole 21: first lead 21A: First section 211: connection section 212: extension section 212A: first extension section 212B: second extension section 212C: third extension section 22: second lead 22A: second section 221: connection section 222: extension Out part 222A: first extending part 222B: second extending part 222C: third extending part 23: third lead 231: covering part 232: exposed part 232A: first extending part 32B: second extension part 232C: third extension part 31: first wire 32: second wire 40: shield 40A: first region 40B: second region 41: end surface 411: first end surface 412: second End face 42: circumferential surface 43: through hole 44: flange 50: sealing resin 51: top surface 52: bottom surface 531: first side surface 532: second side surface 54: main body hole 55: covering region 60: mounting substrate 60A: main surface 60B: back side 61: opening 62: wiring 70: conductive bonding layer z: thickness direction x: first direction y: second direction

Claims (19)

A semiconductor element having a first electrode to which an electrical signal is input, and a second electrode through which a current converted based on the electrical signal flows to the outside;
A first lead having a first section extending in a first direction orthogonal to the thickness direction of the semiconductor element, and conducting to the first electrode;
A second lead having a second section extending in the first direction and electrically connected to the second electrode;
A shield made of ferrite and surrounding at least one of the first section and the second section;
And a sealing resin covering a part of each of the first lead and the second lead.
At least one part of the said shielding body is covered by the said sealing resin, The semiconductor device characterized by the above-mentioned. The shield includes a first area surrounding the periphery of the first section, and a second area surrounding the periphery of the second section,
The semiconductor device according to claim 1, wherein the first region and the second region are separated from each other. The sealing resin has a first side surface and a second side surface facing each other in the first direction,
The first lead and the second lead are arranged in a second direction orthogonal to both the thickness direction of the semiconductor device and the first direction,
The semiconductor device according to claim 1, wherein a part of the first lead protrudes in the first direction from the first side surface in a thickness direction view of the semiconductor element.   The semiconductor device according to claim 3, wherein a part of the second lead protrudes in the first direction from the first side surface in a thickness direction view of the semiconductor element.   The semiconductor device according to claim 3, wherein a part of the second lead protrudes in the first direction from the second side surface in a thickness direction view of the semiconductor element. The shield has a first end surface and a second end surface facing opposite to each other in the first direction, and a through hole extending from the first end surface to the second end surface,
The semiconductor device according to claim 4, wherein at least one of the first section and the second section is inserted into the through hole.   The semiconductor device according to claim 6, wherein the sealing resin has a covering region located in the through hole and covering at least one of the first section and the second section.   The semiconductor device according to claim 7, wherein the first end surface and the second end surface are covered with the sealing resin. The first end face is exposed from at least one of the first side surface and the second side surface,
The semiconductor device according to claim 6, wherein the second end surface is covered with the sealing resin. The shield has a circumferential surface connected to the outer edge of each of the first end surface and the second end surface,
The semiconductor device according to claim 9, wherein at least a part of the circumferential surface is covered with the sealing resin. The area of the first end face is smaller than the area of the second end face,
The semiconductor device according to claim 10, wherein the circumferential surface is inclined with respect to the first direction. The shielding body has a flange which protrudes from the circumferential surface in a direction orthogonal to the first direction, and which surrounds the circumferential surface,
The semiconductor device according to claim 10, wherein the flange is covered with the sealing resin.   The semiconductor device according to claim 12, wherein the flange is connected to an outer edge of the second end surface. The semiconductor device further comprises a die pad for mounting the semiconductor device,
The semiconductor device has a third electrode through which a current converted based on the electrical signal flows toward the inside of the semiconductor device.
The third electrode is electrically bonded to the die pad,
The semiconductor device according to any one of claims 3 to 13, further comprising a third lead connected to the die pad.   The semiconductor device according to claim 14, wherein the third lead has an exposed portion that protrudes in the first direction from the first side surface in a thickness direction view of the semiconductor element.   The semiconductor device according to claim 14, wherein the third lead has an exposed portion that protrudes in the first direction from the second side surface in a thickness direction view of the semiconductor element. A semiconductor element having a first electrode to which an electrical signal is input, and a second electrode through which a current converted based on the electrical signal flows to the outside, a first lead conducted to the first electrode, and the second lead A semiconductor device comprising a second lead electrically connected to the electrode;
A mounting substrate having a main surface and a back surface facing in the thickness direction opposite to each other and having an opening extending from the main surface to the back surface;
A shield made of ferrite and having a through hole penetrating and a shield supported by the mounting substrate such that the through hole overlaps the opening when viewed in the thickness direction of the mounting substrate; Equipped
At least one of the first lead and the second lead is inserted into both the through hole and the opening;
A mounting structure of a semiconductor device, wherein at least a part of the shield is embedded in the mounting substrate from the main surface. The shield has an end face facing the side to which the main surface faces in the thickness direction of the mounting substrate,
The semiconductor device mounting structure according to claim 17, wherein the end surface is flush with the main surface. The mounting substrate has a wire disposed on the back surface,
The semiconductor device mounting structure according to claim 17, further comprising a conductive bonding layer for electrically bonding at least one of the first lead and the second lead to the wiring.

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