JP2019083217A5 - - Google Patents

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Publication number
JP2019083217A5
JP2019083217A5 JP2019041830A JP2019041830A JP2019083217A5 JP 2019083217 A5 JP2019083217 A5 JP 2019083217A5 JP 2019041830 A JP2019041830 A JP 2019041830A JP 2019041830 A JP2019041830 A JP 2019041830A JP 2019083217 A5 JP2019083217 A5 JP 2019083217A5
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Japan
Prior art keywords
light
emitting device
half mirror
light source
wavelength
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JP2019041830A
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Japanese (ja)
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JP2019083217A (en
JP6773156B2 (en
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Priority to JP2019041830A priority Critical patent/JP6773156B2/en
Priority claimed from JP2019041830A external-priority patent/JP6773156B2/en
Publication of JP2019083217A publication Critical patent/JP2019083217A/en
Publication of JP2019083217A5 publication Critical patent/JP2019083217A5/ja
Priority to JP2020165300A priority patent/JP6923832B2/en
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Publication of JP6773156B2 publication Critical patent/JP6773156B2/en
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Claims (15)

基板と、
前記基板上に位置する複数の光源と、
光拡散板と、
前記光拡散板と、前記基板の前記複数の光源との間に位置するハーフミラーと、
前記基板と前記光拡散板との間であって、前記複数の光源の出射面の少なくとも一部の上方に位置する散乱反射部と、
を備え
前記散乱反射部は、樹脂および前記樹脂に分散している粒子を含み、
前記散乱反射部は、上面視において、各光源の出射面を含んでおり前記出射面よりも大きい領域に位置しており、前記領域の前記上面視における前記粒子の密度は、各光源の出射面の直上の第1部分よりもその周辺に位置する第2部分における密度のほうが小さい、発光装置。
A substrate,
A plurality of light sources located on the substrate;
A light diffusing plate;
A half mirror positioned between the light diffusing plate and the plurality of light sources of the substrate;
A scattering reflection portion located between the substrate and the light diffusing plate and above at least a part of an emission surface of the plurality of light sources;
Equipped with a,
The scattering reflection portion includes a resin and particles dispersed in the resin,
The scattering reflection section includes an exit surface of each light source in a top view and is located in a region larger than the exit surface, and the density of the particles in the top view of the region is the exit surface of each light source. The light emitting device has a lower density in the second portion located in the vicinity of the first portion immediately above the first portion .
前記散乱反射部は、前記ハーフミラーの上面または下面に位置している請求項1に記載の発光装置。The light-emitting device according to claim 1, wherein the scattering reflection unit is located on an upper surface or a lower surface of the half mirror. 前記散乱反射部は、前記光拡散板の下面に位置している請求項1または2に記載の発光装置。The light-emitting device according to claim 1, wherein the scattering reflection part is located on a lower surface of the light diffusion plate. 頂部を有する壁部で形成される複数の領域を有し、前記基板上において前記複数の光源のそれぞれを取り囲む区分部材をさらに備えた、請求項1に記載の発光装置。The light-emitting device according to claim 1, further comprising: a partition member having a plurality of regions formed by a wall portion having a top portion and surrounding each of the plurality of light sources on the substrate. 前記散乱反射部は、前記区分部材の前記頂部上方には位置していない、請求項4に記載の発光装置。The light-emitting device according to claim 4, wherein the scattering reflection part is not located above the top part of the sorting member. 前記ハーフミラーは、前記区分部材の1つ以上の前記頂部に接して配置されている、請求項4または5に記載の発光装置。The light emitting device according to claim 4, wherein the half mirror is disposed in contact with one or more top portions of the sorting member. 前記ハーフミラーは、前記区分部材の1つ以上の前記頂部と接続部材によって固定されている、請求項4から6のいずれかに記載の発光装置。The light-emitting device according to claim 4, wherein the half mirror is fixed by one or more top portions of the partition member and a connection member. 各光源はバットウイング型の配光特性を有する、請求項1から7のいずれかに記載の発光装置。The light-emitting device according to claim 1, wherein each light source has a batwing-type light distribution characteristic. 前記ハーフミラーは誘電体多層膜を有する、請求項1から8のいずれかに記載の発光装置。The light emitting device according to claim 1, wherein the half mirror has a dielectric multilayer film. 前記ハーフミラーの垂直方向の反射率特性において、前記光源の発光ピーク波長より長波長側の帯域は、短波長側の帯域よりも広い、請求項1から9のいずれかに記載の発光装置。10. The light emitting device according to claim 1, wherein, in the reflectance characteristics in the vertical direction of the half mirror, a band on a longer wavelength side than a light emission peak wavelength of the light source is wider than a band on a short wavelength side. 垂直入射時における前記ハーフミラーの反射率は、前記光源の発光波長帯域に対して30%以上75%以下である、請求項1から10のいずれかに記載の発光装置。11. The light emitting device according to claim 1, wherein a reflectance of the half mirror at the time of vertical incidence is 30% or more and 75% or less with respect to an emission wavelength band of the light source. 前記ハーフミラーと前記基板との間隔は前記複数の光源のうち隣接する光源における間隔の0.2倍以下である請求項1から11のいずれかに記載の発光装置。The light emitting device according to claim 1, wherein a distance between the half mirror and the substrate is 0.2 times or less a distance between adjacent light sources among the plurality of light sources. 各光源は、水平な方向に対して仰角20゜未満の光量が全体の光量の30%以上である配光特性を有する請求項1から12のいずれかに記載の発光装置。13. The light-emitting device according to claim 1, wherein each light source has a light distribution characteristic in which a light amount with an elevation angle of less than 20 ° with respect to a horizontal direction is 30% or more of a total light amount. 前記光拡散板の、前記ハーフミラーが位置する側と反対側に位置しており、前記光源からの光を吸収し、前記光源からの光とは異なる波長の光を発する波長変換層をさらに備える、請求項1から13のいずれかに記載の発光装置。The light diffusion plate further includes a wavelength conversion layer that is located on the opposite side to the side where the half mirror is located, absorbs light from the light source, and emits light having a wavelength different from that of the light from the light source. The light-emitting device according to claim 1. 前記波長変換層と前記ハーフミラーの間に位置し、前記光源の発光波長よりも前記波長変換層が発する光の波長における反射率が高いダイクロイック層をさらに備える、請求項14に記載の発光装置。The light emitting device according to claim 14, further comprising a dichroic layer positioned between the wavelength conversion layer and the half mirror and having a higher reflectance at a wavelength of light emitted from the wavelength conversion layer than an emission wavelength of the light source.
JP2019041830A 2019-03-07 2019-03-07 Light emitting device Active JP6773156B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2019041830A JP6773156B2 (en) 2019-03-07 2019-03-07 Light emitting device
JP2020165300A JP6923832B2 (en) 2019-03-07 2020-09-30 Light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019041830A JP6773156B2 (en) 2019-03-07 2019-03-07 Light emitting device

Related Parent Applications (1)

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JP2016182079A Division JP6493345B2 (en) 2016-09-16 2016-09-16 Light emitting device

Related Child Applications (1)

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JP2020165300A Division JP6923832B2 (en) 2019-03-07 2020-09-30 Light emitting device

Publications (3)

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JP2019083217A JP2019083217A (en) 2019-05-30
JP2019083217A5 true JP2019083217A5 (en) 2019-10-24
JP6773156B2 JP6773156B2 (en) 2020-10-21

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Publication number Priority date Publication date Assignee Title
CN114442370B (en) * 2021-12-31 2023-06-02 厦门天马微电子有限公司 Backlight module and display device

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JP4655745B2 (en) * 2005-04-27 2011-03-23 ソニー株式会社 Backlight device, manufacturing method thereof, and liquid crystal display device
JP2007214081A (en) * 2006-02-13 2007-08-23 Seiko Instruments Inc Lighting device and display device
JP5178796B2 (en) * 2010-09-10 2013-04-10 三菱電機株式会社 Light emitting device and lighting device
JP2012174371A (en) * 2011-02-17 2012-09-10 Sharp Corp Lighting apparatus, and liquid crystal display
JP2012174634A (en) * 2011-02-24 2012-09-10 Sharp Corp Light source module and optical member
CN102644883A (en) * 2011-03-25 2012-08-22 京东方科技集团股份有限公司 Direct type backlight source

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