JP2019075364A - Plasma apparatus having dual-type plasma discharge unit - Google Patents

Abstract

To disclose a plasma apparatus having a dual type plasma discharge unit.SOLUTION: A plasma apparatus comprises: a central electrode 110 of a plate shape; first and second dielectrics 121, 122 of a plate shape, stacked on the central electrode to cover both surfaces of the central electrode; a first outer electrode 130 of a plate shape, disposed parallel to the first dielectric layer, and facing the dielectric to allow all or a part of one surface thereof to be spaced apart from the dielectric; a second outer electrode 140 of a plate shape, disposed to be symmetrical to the first outer electrode with the second dielectric interposed therebetween, disposed parallel to the dielectric, and having all or a part of one surface thereof to face the dielectric; a power supply device 150 for applying a high voltage to the central electrode; and at least one gas injection unit 133, 143 for injecting plasma source gas into separated spaces formed between the outer electrodes and the respective dielectrics.SELECTED DRAWING: Figure 5

Description

  The present invention relates to a plasma apparatus, and more particularly to a plasma apparatus capable of generating and discharging two linear plasmas parallel to each other.

  As a method of treating the surface of the substrate, for example, removal of contaminants such as organic substances from the surface of the substrate, removal of resist, adhesion of organic film, surface deformation, improvement of film formation, reduction of metal oxide Or, there are methods using chemicals largely and methods using plasma, such as cleaning of glass substrates for liquid crystal. Among them, methods using chemicals have the disadvantage that chemicals adversely affect the environment.

  As an example of the surface treatment using plasma, there is a method using plasma at low temperature and low pressure. The surface treatment method using low temperature and low pressure plasma is a method of generating plasma in a low temperature and low pressure vacuum chamber, bringing them into contact with the surface of the substrate, and treating the substrate surface.

Such surface treatment methods using low temperature and low pressure plasmas are not widely used despite the excellent cleaning effect. The reason is that the method is difficult to apply to continuous processes carried out at atmospheric pressure, as a vacuum device is required to maintain the low pressure.
As a result, recently, research has been very actively conducted to generate plasma under atmospheric pressure and use it for surface treatment.

  As an example, there is provided a plasma apparatus for generating plasma under atmospheric pressure, wherein the plasma generated in the plasma generation space is induced to the outside of the plasma generation space and then brought into contact with the substrate to process the surface of the substrate. It is used.

FIG. 1 illustrates an example of a conventional atmospheric pressure plasma apparatus.
The atmospheric pressure plasma apparatus shown in FIG. 1 has a plasma generating space formed between two flat electrodes 101a and 101b insulated by insulators 106a and 106b and arranged in parallel, and the two electrodes 101a and 101b. A processing gas inlet 103 formed on one side of the substrate 102 and an outlet 104 formed on the other side of the plasma generation space 102 are provided.

  A processing gas flows into the plasma generation space 102 through the inlet 103 formed on one side of the plasma generation space 102, and the processing gas that has flowed into the plasma generation space 102 is converted into plasma by the AC voltage supplied to the electrodes 101a and 101b. . The generated plasma and the processing gas not converted into plasma are guided to the outside of the plasma generation space 102 through the exhaust port 104 formed on one side of the plasma generation space 102 and are in contact with the surface of the substrate 105. The surface of the substrate 105 is to be treated.

  However, the conventional atmospheric pressure plasma apparatus shown in FIG. 1 has a width W to be treated by forming an outlet 104 for the processing gas that has not been converted into plasma and plasma on one side of the plasma generation space. There is a drawback in that it is forced to be limited, and there is a problem that the surface treatment performance of the substrate is lowered. If it is attempted to widen the processing width W, there is a problem that the applied AC voltage is rapidly increased.

FIG. 2 illustrates another example of a conventional atmospheric pressure plasma apparatus.
The atmospheric pressure plasma apparatus shown in FIG. 2 includes a flat plate-shaped upper electrode 301a and a flat plate-shaped lower electrode 301b, a plasma generation space 302 formed between two electrodes 301a and 301b, and the two electrodes 301a and 301b. And insulators 303a and 303b for insulating the heat, radiators 304a and 304b for reducing the surface temperature of the electrodes 301a and 301b, inlets 305a and 305b for introducing a processing gas into the plasma generator 300, and the lower electrode 301b. The plasma generated from the plasma generation space 302 and the processing gas not converted into plasma include outlets 306a, 306b, 306c, 306d, 306e for guiding them to the outside of the plasma generation space 302, and processing is performed under the lower electrode 301a. The substrate 308 to be tried is located.

  An alternating current power supply 307 is connected to the upper electrode 301a, and the lower electrode 301b is grounded. The surface treatment apparatus including the electrode structure described above can widen the effective area of the electrode that can be converted to plasma, and has a larger treatment area to use an electrode plate with an outlet. It is possible to design that can. However, since the flow velocity of the processing gas comes to have many differences between the discharge ports 306a and 306e on the end side of the electrode plate and the discharge port 306c on the center side, it is not only difficult to generate uniform plasma, The chemical strength of the processing gas at the outlets 306a, 306b, 306c, 306d, 306e can also be different, which causes a problem that the entire surface of the substrate 308 can not be processed uniformly.

  Therefore, one of the problems to be solved by the present invention is to be able to generate and discharge a uniform linear plasma so that the plasma source gas is uniformly supplied into the plasma discharge channel in which the plasma is generated. To provide a plasma device that

  Another object is to provide a plasma apparatus in which the linear plasma is discharged in a dual type.

  According to one aspect, the present invention provides a center electrode in the form of a plate, a first dielectric layer and a second dielectric layer stacked on both sides of the center electrode, and a parallel spacing with the first dielectric layer, The first outer electrode in the form of a plate facing the first dielectric layer and the center electrode are symmetrical with the first outer electrode so that a discharge port in the longitudinal direction of the center electrode is formed on the side. A second outer electrode in the form of a plate facing the second dielectric layer, the first outer electrode and the second outer electrode, and a second electrode, and the second outer electrode, and the second outer electrode. A gas injection unit for injecting a plasma source gas into a separation space between the first dielectric layer and the second dielectric layer; the center electrode, the first outer electrode, and a plasma generation unit generating plasma in the separation space; Power supply device for applying a voltage between it and the second outer electrode DOO relates a plasma apparatus comprising a plasma discharge portion of the dual type, which comprises a.

  In one embodiment, the separated space between the first outer electrode and the dielectric generates a first plasma and discharges the first plasma along the longitudinal direction of the first outer electrode. A discharge channel is formed, and a separated space between the second outer electrode and the dielectric generates a second plasma and discharges the second plasma along the longitudinal direction of the second outer electrode. The present invention relates to a plasma apparatus provided with a dual-type plasma discharge unit characterized by forming a plasma discharge channel.

  In one embodiment, the gas injection part is extended in parallel to the lateral direction of the first outer electrode and is disposed adjacent to the top of the first plasma discharge channel; A connecting hole extending from the first gas guide channel toward the first plasma discharge channel and fluidly connected to the first plasma discharge channel and the first gas guide channel; A second gas guide channel extending parallel to the lateral direction of the two outer electrodes and disposed adjacent to the top of the second plasma discharge channel; and from the second gas guide channel to the second plasma discharge channel Between the second plasma discharge channel and the second plasma discharge channel fluidly connected to the second gas discharge channel. The present invention relates to a plasma apparatus provided with a dual type plasma discharge part characterized by including the connection hole of

  In one embodiment, the plasma device is recessed toward the first gas guide channel from the side of the first outer electrode facing the dielectric, and the connection hole between the first plasma discharge channel and the first channel is formed. And a second gas discharge channel and a second channel, recessed from a surface of the second outer electrode facing the dielectric and in the direction of the second gas guide channel. The present invention relates to a plasma apparatus provided with a dual type plasma discharger, further including a second gas retention space fluidically connected to the connection hole between the two.

  In one embodiment, the present invention relates to a plasma apparatus including a dual type plasma discharge unit characterized in that different plasma source gases are injected into the first plasma discharge channel and the second plasma discharge channel.

  In one embodiment, the plasma device is provided through a surface of the first outer electrode disposed perpendicular to a surface of the first outer electrode facing the dielectric, and the first direction in which a cooling fluid is injected and travels is provided. A first cooling water circulation channel for circulating the cooling fluid in a second direction opposite to the first direction, and a surface disposed perpendicular to one surface of the second outer electrode facing the dielectric material. And a second cooling water circulation channel for circulating the cooling fluid in a first direction in which the cooling fluid is injected and travels and a second direction opposite to the first direction. The present invention relates to a plasma apparatus provided with a dual type plasma discharge unit.

  According to the plasma apparatus according to the present invention, it is possible to discharge plasma in a dual type, and to uniformly supply the plasma source gas into the individual plasma discharge channels for generating and discharging the plasma, uniform linear It is possible to generate and discharge plasma, and to uniformly treat the surface of the substrate.

An example of the conventional atmospheric pressure plasma apparatus is shown in figure. 5 illustrates another example of a conventional atmospheric pressure plasma apparatus. , It is a perspective view showing the appearance of the plasma device concerning one example of the present invention. FIG. 4 is a cross-sectional view taken along the line A-A ′ shown in FIG. 3; FIG. 4 is a cross-sectional view taken along the line B-B ′ shown in FIG. 3; FIG. 6 is a perspective view showing the inner surface of the first and second outer electrodes shown in FIG. 3; FIG. 2 is a cross-sectional view illustrating a state of processing a substrate using a plasma apparatus according to an embodiment of the present invention and a movement path of gas in the process; It is a figure for demonstrating the structure of a primary design module. When plasma is generated and discharged in the primary design module, the temperature distribution and flow velocity distribution in each plasma discharge channel, and the temperature distribution and flow velocity distribution in the substrate processed with plasma are shown. It is the graph which showed the result of temperature distribution and flow velocity distribution which are shown in Drawing 9b. It is a figure for demonstrating the structure of a secondary design module. When plasma is generated and discharged in the secondary design module, the temperature distribution and flow velocity distribution in each plasma discharge channel, and the temperature distribution and flow velocity distribution in the substrate processed with plasma are shown. It is the graph which showed the result of temperature distribution and flow velocity distribution which are shown in Drawing 10b. It is a figure for demonstrating the structure of a tertiary design module. When plasma is generated and discharged in the tertiary design module, the temperature distribution and flow velocity distribution in each plasma discharge channel, and the temperature distribution and flow velocity distribution in the substrate processed with plasma are shown. It is the graph which showed the result of temperature distribution and flow velocity distribution which are shown in Drawing 11b. FIG. 6 is a front view of one surface parallel to the lengthwise direction of the plasma device according to the embodiment of the present invention shown in FIG. 5; When plasma is generated and discharged in the fourth order design module, the temperature distribution and flow velocity distribution in each plasma discharge channel, and the temperature distribution and flow velocity distribution in the substrate to be processed with plasma are shown. It is the graph which showed the result of temperature distribution and flow velocity distribution which are shown in Drawing 12b.

  Hereinafter, a plasma apparatus according to an embodiment of the present invention will be described in detail with reference to the attached drawings. The present invention can be modified in various ways, can have various forms, and specific embodiments are illustrated in the drawings and described in detail in the text. However, this should not be construed as limiting the invention to the particular forms disclosed, but it is to be understood as including all modifications, equivalents and alternatives falling within the spirit and scope of the invention. Like reference symbols were used for like components while describing each drawing. In the accompanying drawings, the dimensions of the structures are shown larger than in fact for the sake of clarity of the present invention.

  Although the terms first, second, etc. can be used to describe various components, the components should not be limited by the terms. The terms are only used to distinguish one component from another component. For example, without departing from the scope of the present invention, the first component can be named as the second component, and similarly, the second component can be named as the first component.

  The terms used in the present application are merely used to describe particular embodiments, and are not intended to limit the present invention. The singular expression also includes the plural, unless the context clearly indicates otherwise. In this application, terms such as "comprises" or "have" are intended to specify that the features, numbers, steps, acts, components, parts or combinations of these are present in the specification. It is to be understood that the existence or addition of one or more other features or numbers, steps, acts, components, parts or combinations thereof is not precluded in advance.

  Unless otherwise defined, all terms used herein, including technical and scientific terms, are to be commonly understood by one of ordinary skill in the art to which this invention belongs. It has the same meaning. Terms as defined in commonly used dictionaries are to be interpreted as having meanings consistent with those in the context of the relevant art and, unless explicitly defined in the present application, ideal. Or not interpreted in an overly formal sense.

  The plasma apparatus of the present invention is configured to generate dual plasmas parallel to one another. That is, it is configured to generate a linear first plasma and a linear second plasma parallel to the first plasma. In the following description, specific examples of the plasma apparatus of the present invention for generating the first plasma and the second plasma will be described.

  3 and 4 are perspective views showing the appearance of a plasma apparatus according to an embodiment of the present invention, FIG. 5 is a cross-sectional view taken along the line AA 'shown in FIG. 3, and FIG. FIG. 7 is a cross-sectional view taken along the line BB ′ shown in FIG. 3, and FIG. 7 is a perspective view showing an inner surface of the first outer electrode and the second outer electrode shown in FIG. 3.

Referring to FIGS. 3 to 7, the plasma apparatus according to an embodiment of the present invention includes a center electrode 110, dielectrics 121 and 122, a first outer electrode 130, a second outer electrode 140, a power supply 150, and a gas injection. The units 133 and 143 are included.
The center electrode 110 is provided in the form of a plate having a constant height and length, and includes a first surface 111 and a second surface 112. A surface located on one side of the end with respect to any one end of the plate may be a first surface 111, and the opposite side of the first surface 111 may be a second surface 112.

  The dielectric is stacked on the center electrode 110 so as to cover the first surface 111 and the second surface 112 of the center electrode 110. The dielectric can be one or more. In the case of one dielectric, when the dielectric is stacked on the center electrode 110, it can be provided in a form capable of simultaneously covering the first surface 111 and the second surface 112 of the center electrode 110, and a plurality of dielectrics In some cases, the respective dielectrics may be provided in the form of being stacked on the first surface and the second surface 112 with areas corresponding to the first surface 111 and the second surface 112, respectively. In one embodiment, a plurality of dielectrics may be provided and stacked on the first and second surfaces 111 and 112, respectively. Hereinafter, for convenience of description, the dielectric stacked on the first surface 111 will be named as a first dielectric 121, and the dielectric stacked on the second surface 112 will be named as a second dielectric 122. I will explain.

  The first outer electrode 130 may be disposed in parallel with the first dielectric 121, and all or part of the first outer electrode 130 may face the first dielectric 121 so as to be spaced apart from the first dielectric 121. At this time, a separation space between the first outer electrode 130 and the first dielectric 121 generates a first plasma and discharges the first plasma along a longitudinal direction of the first outer electrode 130. The plasma discharge channel 131 can be configured. As an example, the first outer electrode 130 may be stacked on the first dielectric 121 from the first surface 111 side of the center electrode 110. In such a case, the first plasma discharge channel 131 may have a cavity structure, into which plasma source gas flows, and the first plasma discharge channel 131 may be formed of a first dielectric. It is opposed to 121. The first outer electrode 130 may have a polyhedral shape having at least one plane parallel to the plane of the first dielectric 121. For example, the first outer electrode 130 can be in the shape of a hexahedron consisting of square or rectangular faces. In such a case, the first plasma discharge channel 131 may be formed on one surface of a hexahedron, and the first plasma discharge channel 131 may be formed in a configuration in which the first plasma discharge channel 131 is inscribed into a square smaller than a rectangular plane of the hexahedron. Can be At this time, the first plasma discharge channel 131 is connected to any one surface perpendicular to the surface on which the first plasma discharge channel 131 is located, and is opened in the direction of the connected surface, thereby the first discharge port 131a. Can be included.

  The second outer electrode 140 may be disposed to be symmetrical to the first outer electrode 130 and may be disposed in parallel with the second dielectric 122 such that all or part of one surface faces the second dielectric 122 it can. At this time, a separation space between the second outer electrode 140 and the second dielectric 122 generates a second plasma and discharges the second plasma along the longitudinal direction of the second outer electrode 140. The plasma discharge channel 141 can be configured. As an example, the second outer electrode 140 may be stacked on the second dielectric 122 from the second surface 112 side of the center electrode 110. In such a case, the second plasma discharge channel 141 may have a cavity structure, and a plasma source gas may flow into the second plasma discharge channel 141, and the second plasma discharge channel 141 may be opposed to the second dielectric 122. . The second plasma discharge channel 141 includes a second discharge port 141a. The shape of the second outer electrode 140 and the structure of the second plasma discharge channel 141 are the same as the shape of the first outer electrode 130 and the structure of the first plasma discharge channel 131. This will be replaced by the description of the first outer electrode 130 and the first plasma discharge channel 131.

  Meanwhile, the first outer electrode 130 and the second outer electrode 140 may be electrically connected to each other. Thus, the first outer electrode 130 may have the first protrusions 132a and 132b on two surfaces perpendicular to the longitudinal direction of the center electrode 110, and the second outer electrode 140 may be formed of the center electrode 110. Second protrusions 142a and 142b may be provided on two planes perpendicular to the longitudinal direction. The first and second protrusions 132a and 132b and the second protrusions 142a and 142b may face each other, and the first and second protrusions 132a and 132b and the second protrusions 142a and 142b may be combined with bolts and nuts, respectively. The first outer electrode 130 and the second outer electrode 140 may be conductively coupled to one another.

The power supply 150 is electrically connected to the center electrode 110, the first outer electrode 130 and the second outer electrode 140, and applies a high voltage to the center electrode 110. The first outer electrode 130 and the second outer electrode 140 may be grounded.
The gas injection units 133 and 143 may include a first gas injection unit 133 and a second gas injection unit 143.

  The first gas injection unit 133 is fluidly connected to the first plasma discharge channel 131 to inject a plasma source gas into the first plasma discharge channel 131. As an example, the first gas injection unit 133 may include a first gas guide channel 1331 and a connection hole 1332 between at least one first channel.

  The first gas guiding channel 1331 is disposed adjacent to the first plasma discharge channel 131 so as to be parallel to the first plasma discharge channel 131, and the plasma source gas injected from the outside is set to the first plasma discharge channel 131 It can be guided to flow in parallel directions. Thus, the first gas guide channel 1331 may be provided through one of two surfaces perpendicular to the length direction of the center electrode 110 from the first outer electrode 130. At this time, the first gas guide channel 1331 may be disposed adjacent to the first plasma discharge channel 131 at the height of the upper end of the first plasma discharge channel 131 and in parallel with the first plasma discharge channel 131. In such a case, the first gas guiding channel 1331 may be disposed adjacent to the entire lateral length of the cavity of the first plasma discharge channel 131 parallel to the longitudinal direction of the center electrode 110. it can. The plasma source gas is injected into the first gas guide channel 1331 and the injected plasma source gas moves along the length direction of the first gas guide channel 1331.

  The connection holes 1332 between the at least one first channel allow the plasma source gas moving in the first gas guide channel 1331 to be supplied from the first gas guide channel 1331 to the first plasma discharge channel 131. Therefore, the connection hole 1332 between the first channels is extended from the first gas guide channel 1331 to the first plasma discharge channel 131, and can be in fluid communication with the first gas guide channel 1331 and the first plasma discharge channel 131. Connected to As an example, the connection holes 1332 between the first channels may be arranged in a plurality along the length direction of the first gas guiding channel 1331.

  The second gas injection unit 143 is fluidly connected to the second plasma discharge channel 141 to inject a plasma source gas into the second plasma discharge channel 141. As an example, the second gas injection part 143 may include a second gas guide channel 1431 and a connection hole 1432 between at least one second channel.

  The second gas guide channel 1431 is disposed adjacent to the second plasma discharge channel 141 so as to be parallel to the second plasma discharge channel 141, and the plasma source gas injected from the outside is set to the second plasma discharge channel 141. It can be guided to flow in parallel directions. Thus, the second gas guide channel 1431 may be provided through one of two surfaces perpendicular to the longitudinal direction of the center electrode 110 from the second outer electrode 140. At this time, the second gas guide channel 1431 may be disposed adjacent to the second plasma discharge channel 141 at the height of the upper end of the second plasma discharge channel 141 and in parallel with the second plasma discharge channel 141. In such a case, the second gas guide channel 1431 may be disposed adjacent to the entire lateral length of the cavity of the second plasma discharge channel 141 parallel to the longitudinal direction of the center electrode 110. it can. The plasma source gas is injected into the second gas guide channel 1431, and the injected plasma source gas moves along the length direction of the second gas guide channel 1431.

The connection hole 1432 between the at least one second channel allows the plasma source gas traveling in the second gas guide channel 1431 to be supplied from the second gas guide channel 1431 to the second plasma discharge channel 141. Therefore, the connection hole 1432 between the second channels is extended in the direction from the second gas guide channel 1431 to the second plasma discharge channel 141, and can be in fluid communication with the second gas guide channel 1431 and the second plasma discharge channel 141. Connected to As an example, the connection holes 1432 between the second channels may be arranged in a plurality along the length direction of the second gas guide channels 1431.
Meanwhile, the plasma apparatus provided with the dual type plasma discharger according to an embodiment of the present invention may further include a first gas retention space 134 and a second gas retention space 144.

  The first gas retention space 134 is recessed in a surface of the first outer electrode 130 facing the first dielectric 121, that is, in a direction from the plane of the first plasma discharge channel 131 to the first gas guide channel 1331. In addition, the first gas retention space 134 is disposed in parallel with the first gas guide channel 1331 and adjacent to the first gas guide channel 1331, and the first plasma discharge channel 131 and the connection hole 1332 between the first channels. It is fluidly connected to In such a first gas retention space 134, plasma source gas moving in the first gas guide channel 1331 flows in via the connection hole 1332 between the first channels and is retained. For example, if the plasma source gas can stay until the amount of plasma source gas flowing in corresponds to the volume of the first gas retention space 134, and if the plasma source gas flows in more than the amount corresponding to the volume of the first gas retention space 134 The plasma source gas may be supplied to the first plasma discharge channel 131 from the first gas retention space 134.

  The second gas retention space 144 is recessed in a surface of the second outer electrode 140 facing the second dielectric 122, that is, in a direction from the plane of the second plasma discharge channel 141 to the second gas guide channel 1431. In addition, the second gas retention space 144 is disposed in parallel with the second gas guide channel 1431 and adjacent to the second gas guide channel 1431, and the connection hole between the second plasma discharge channel 141 and the second channel. It is fluidly coupled to 1432. The process of supplying plasma source gas from the second gas retention space 144 to the second plasma discharge channel 141 is similar to the process of supplying plasma source gas from the first gas retention space 134 to the second plasma discharge channel 141. Therefore, the specific description will be replaced with the description of the first gas retention space 134.

  Meanwhile, each of the outer electrodes 130 and 140 of the plasma apparatus provided with the dual type plasma discharger according to an embodiment of the present invention may further include a coolant circulation channel 135 and 145. In the following description, for convenience of explanation, the cooling water circulation channel 135 provided in the first outer electrode 130 is referred to as a first cooling water circulation channel, and the cooling water circulation channel 145 provided in the second outer electrode 140 is provided with a second cooling. Name and describe the water circulation channel.

  The first coolant circulation channel 135 may be provided for cooling the first outer electrode 130. The first coolant circulation channel 135 may circulate the coolant in a first direction in which the coolant is injected and travels, and in a second direction opposite to the first direction. The first coolant circulation channel 135 may extend through at least one surface of the first outer electrode 130 and may include an inlet portion 135a and an outlet portion 135b. For example, the first coolant circulation channel 135 may extend through the opposite surface of the first outer electrode 130 through which the first gas guide channel 1331 passes. At this time, the inlet 135a and the outlet 135b of the first coolant circulation channel 135 may be located in the same plane. There is no particular limitation on the form in which the first cooling water circulation channel 135 is extended from the inlet 135a to the outlet 135b. For example, the first cooling water circulation channel 135 may be in a "soot" shape or a "soot" shape .

  The second coolant circulation channel 145 may be provided for cooling the second outer electrode 140. The second coolant circulation channel 145 may circulate the coolant in a first direction in which the coolant is injected and travels, and a second direction opposite to the first direction. The second coolant circulation channel 145 may extend through at least one surface of the second outer electrode 140 and may include an inlet 145 a and an outlet 145 b. For example, the second coolant circulation channel 145 may extend through the opposite surface of one surface of the second outer electrode 140 through which the second gas guide channel 1431 passes. At this time, the inlet 145 a and the outlet 145 b of the second coolant circulation channel 145 may be located in the same plane. There is no particular limitation on the configuration in which the second cooling water circulation channel 145 is extended from the inlet 145a to the outlet 145b. For example, the second cooling water circulation channel 145 may be in a "soot" shape or a "soot" shape .

  The plasma apparatus according to an embodiment of the present invention generates the linear first plasma and the linear second plasma parallel to the first plasma as described above, and in the following, the first plasma and the first plasma may be generated. 2 The process of generating and discharging the plasma will be described. In the following description, the plasma discharged from the first plasma discharge channel 131 is named and described as a first plasma, and the plasma discharged from the second plasma discharge channel 141 is named and described as a second plasma. Do.

First, plasma source gas is injected into the first gas injection part 133 of the first outer electrode 130 and the second gas injection part 143 of the second outer electrode 140.
The plasma source gas injected into the first gas injection unit 133 moves along the first gas guide channel 1331. And, while the plasma source gas travels in the first gas guiding channel 1331, the plasma source gas may be a first gas connected to the first plasma discharge channel 131 through the connection hole 1332 between the respective first channels. It flows into the stagnant space 134. As soon as the plasma source gas that has flowed into the first gas retention space 134 flows in, it is not moved to the first plasma discharge channel 131, and stays for a certain period of time. For example, the plasma source gas is retained in the first gas retention space 134 until the plasma source gas flows in at a flow rate or more corresponding to the volume of the first gas retention space 134. At this time, the plasma source gas introduced into the first gas retention space 134 is the first gas because the connection holes 1332 between the first channels are arranged along the length direction of the first gas guide channel 1331. It is possible to uniformly flow in the entire length direction of the first gas retention space 134 without being concentrated in a specific space of the retention space 134.

  As described above, the plasma source gas flowing into the first gas retention space 134 is retained in the first gas retention space 134 until the flow rate corresponding to the volume of the first gas retention space 134 is filled. doing. Thereafter, the plasma source gas is supplied to the inside of the first plasma discharge channel 131 at a time when it is filled with a flow rate equal to or higher than the flow rate corresponding to the volume of the first gas retention space 134. At this time, as described above, the plasma source gas is not concentrated in a specific region of the first gas retention space 134, and is uniformly introduced into the entire length direction of the first gas retention space 134. Thus, the plasma source gas supplied from the first gas retention space 134 can be uniformly supplied to the entire first plasma discharge channel 131.

  Meanwhile, a high voltage is applied to the center electrode 110 through the power supply 150 in the process of supplying the plasma source gas. When a high voltage is applied to the center electrode 110, a discharge is started in the first plasma discharge channel 131 facing the first dielectric 121. In such a state, when the plasma source gas is supplied from the first gas retention space 134 in the first plasma discharge channel 131, the first plasma is generated in the first plasma discharge channel 131. The first plasma generated in the first plasma discharge channel 131 is discharged in a direction in which the first plasma discharge channel 131 is opened, and is discharged from the first plasma discharge channel 131. The first plasma is discharged along the plane of the cavity of the first plasma discharge channel 131 and discharged as a linear first plasma.

  Meanwhile, the plasma source gas injected into the second gas injection unit 143 moves along the second gas guide channel 1431. And, while the plasma source gas travels in the second gas guiding channel 1431, the plasma source gas is connected to the second plasma discharge channel 141 through the respective second inter-channel connection holes 1432. Flowed into The plasma source gas flowing into the first gas retention space 134 is not moved to the first plasma discharge channel 131 as soon as it flows in, and is supplied to the second plasma discharge channel 141 after staying for a certain period of time. This process is the same as the process from the time the plasma source gas is injected into the first gas injection part 133 to the time it is injected into the first plasma discharge channel 131, so a more detailed description will be given in the first process. It is replaced by the explanation of the process of discharging the plasma.

  Also, a high voltage is applied to the center electrode 110 through the power supply 150 in the process of supplying plasma source gas through the second gas injection unit 143. When a high voltage is applied to the center electrode 110, a discharge is started in the second plasma discharge channel 141 facing the second dielectric 122. In such a state, when the plasma source gas is supplied from the second gas retention space 144 in the second plasma discharge channel 141, the second plasma is generated in the second plasma discharge channel 141. The plasma generated in the second plasma discharge channel 141 is discharged in the direction in which the second plasma discharge channel 141 is opened, and is discharged from the second plasma discharge channel 141. The second plasma is discharged along the plane of the cavity of the second plasma discharge channel 141 and discharged as a linear second plasma.

  Such a plasma apparatus according to an embodiment of the present invention can be used in the step of processing the surface of a substrate, such as a semiconductor device. For example, the semiconductor device can be used for surface treatment of a substrate such as etching of a substrate, thin film deposition, planarization of the substrate surface, and the like.

FIG. 8 is a cross-sectional view illustrating a state of processing a substrate using a plasma apparatus according to an embodiment of the present invention and a movement path of gas in the process.
Referring to FIG. 8, the plasma apparatus according to an embodiment of the present invention may be accommodated in a process chamber (not shown), and may be under the plasma apparatus, ie, the first outer electrode 130 and the second outer side. The substrate 10 can be arranged to be transferred under the electrode 140.

  In such a state, according to the procedure described above, linear first plasma and linear second plasma are parallelly discharged from the first plasma discharge channel 131 and the second plasma discharge channel 141 of the plasma apparatus, and are parallel to each other. The first plasma and the second plasma are discharged toward the substrate 10 and come into contact with the surface of the substrate 10. Thus, the substrate 10 can be subjected to a plurality of circuit surface treatments by the first plasma and the second plasma, passing under the plasma device.

  The plasma apparatus having the dual-type plasma discharger according to the embodiment of the present invention has the first gas guiding channel 1331 and the second gas guiding channel 1431 as the plasma source gas injected for plasma generation. Along the length direction of the first plasma discharge channel 131 and the second plasma discharge channel 141. In addition, after the plasma source gas is retained in the first gas retention space 134 and the second gas retention space 144, the plasma source gas is filled at a flow rate corresponding to the volume of each of the gas retention spaces 134 and 144 or more. , And supplied to the first plasma discharge channel 131 and the second plasma discharge channel 141. In addition, the plasma source gas is uniformly supplied to the entire first plasma discharge channel 131 and the second plasma discharge channel 141. For this reason, there is an advantage that the plasma generated by the first plasma discharge channel 131 and the second plasma discharge channel 141 can be uniformly distributed and discharged in the respective plasma discharge channels 131 and 141. Therefore, when the surface of the substrate 10 is treated, the surface of the substrate 10 can be plasma treated uniformly.

  The inventor of the present invention has described that the plasma generated by the first plasma discharge channel 131 and the second plasma discharge channel 141 is uniformly distributed and discharged in the respective plasma discharge channels 131 and 141. In order to achieve the above configuration, temperature distribution and flow velocity distribution in the plasma discharge process were analyzed through simulation for each of the stepwise design modules described below.

  The following describes simulation results of each design module in stages. As a simulation condition of each design module, a plasma source gas was set to be injected at a flow rate of 10 lpm, and a voltage for discharge was set to be applied to 100 W.

[Primary design module]
FIG. 9a is a diagram for explaining the structure of the primary design module. In FIG. 9A, (a) shows a cross section of the primary design module, and (b) shows the appearance of the primary design module when the primary design module is viewed from the A direction.

  Referring to FIG. 9 a, the first outer electrode 730 including the center electrode 710, the first dielectric 721, the second dielectric 722, and the first plasma discharge channel 731, and the second outer electrode 740 including the second plasma discharge channel 741. And is designed to inject plasma source gas from the upper ends of the first outer electrode 730 and the second outer electrode 740.

  FIG. 9b shows the temperature distribution and flow velocity distribution in each plasma discharge channel and the temperature distribution and flow velocity distribution on the substrate treated with plasma when plasma is generated and discharged in the primary design module. 9c is a graph showing the results of the temperature distribution and the flow velocity distribution shown in FIG. 9b.

  In FIG. 9 b, (a) shows the temperature distribution in the respective plasma discharge channels 731 and 741 and the temperature distribution on the substrate 10 treated with plasma, and (b) shows the respective plasma discharge channels 731 and 741. The flow velocity distribution inside and the flow velocity distribution on the substrate 10 treated with plasma are shown.

  The values of the result displayed in the graph of FIG. 9c are rxt cent. (Central part of each plasma discharge channel), rxt nozzle (discharge part of each plasma discharge channel), and subst. Cent. Temperature distribution (Figure left) and flow velocity distribution (center of distance between plasma discharge channel and substrate), subst. (Position on the substrate to be treated with plasma discharged through each plasma discharge channel) Right of the figure).

  As shown in FIGS. 9 b and 9 c, the primary design module showed that the temperature distribution and the flow velocity distribution in the length direction of the plasma discharge channels 731 and 741 were not uniform.

[Secondary design module]
FIG. 10a is a diagram for explaining the structure of a secondary design module. In FIG. 10A, (a) shows a cross section of the secondary design module, and (b) shows the appearance of the secondary design module when the secondary design module is viewed from the A direction.

  Referring to FIG. 10a, the first outer electrode 830 including the center electrode 810, the first dielectric 821, the second dielectric 822, the first plasma discharge channel 831, and the second outer electrode 840 including the second plasma discharge channel 841. And a plurality of inlets for injecting a plasma source gas from the upper ends of the first outer electrode 830 and the second outer electrode 840. That is, the secondary design module was designed in the form of adding an inlet in the structure of the primary design module.

  FIG. 10 b shows the temperature distribution and flow velocity distribution in each plasma discharge channel, and the temperature distribution and flow velocity distribution on the substrate treated with plasma, when plasma is generated and discharged in the secondary design module. 10 c is a graph showing the results of the temperature distribution and the flow velocity distribution shown in FIG. 10 b.

  In FIG. 10b, (a) shows the temperature distribution in the respective plasma discharge channels 831, 841 and the temperature distribution on the substrate 10 to be treated with plasma, and (b) shows the respective plasma discharge channels 831, 841. The flow velocity distribution inside and the flow velocity distribution on the substrate 10 treated with plasma are shown.

  The values of the results displayed in the graph of FIG. 10 c are rxt cent. (Central part of each plasma discharge channel), rxt nozzle (discharge part of each plasma discharge channel), and subst. Cent. Temperature distribution (the left side of the figure) and flow velocity distribution at the center of the distance between the plasma discharge channel and the substrate), subst. (The position on the substrate treated with plasma discharged through each plasma discharge channel) (Right side of the figure).

  As shown in FIGS. 10b and 10c, the modules of the secondary design also show that the temperature distribution and flow velocity distribution in the lengthwise direction of each plasma discharge channel 831, 841 are not uniform as in the primary design module. .

[Third-order design module]
FIG. 11a is a diagram for explaining the structure of a tertiary design module. In FIG. 11a, (a) shows a cross section of the tertiary design module, and (b) shows the external appearance of the tertiary design module when the tertiary design module is viewed from the A direction.

  11a, a first outer electrode 930 comprising a center electrode 910, a first dielectric 921, a second dielectric 922, a first plasma discharge channel 931 and a second outer electrode 940 comprising a second plasma discharge channel 941; First gas guide channel 9331 adjacent to first plasma discharge channel 931, into which plasma source gas is injected, second gas guide channel 9431 adjacent to second plasma discharge channel 941, into which plasma source gas is injected, first plasma A connection hole 9332 between the first channels fluidically connecting the discharge channel 931 and the first gas guide channel 9331, a second channel fluidically connecting the second plasma discharge channel 941 and the second gas guide channel 9431 Designed in the form with connection holes 9432 between It was.

  FIG. 11 b shows the temperature distribution and flow velocity distribution in each plasma discharge channel, and the temperature distribution and flow velocity distribution on the substrate treated with plasma, when plasma is generated and discharged in the tertiary design module. 11 c is a graph showing the results of the temperature distribution and the flow velocity distribution shown in FIG. 11 b.

  In FIG. 11 b, (a) shows the temperature distribution in the respective plasma discharge channels 931, 941 and the temperature distribution on the substrate 10 treated with plasma, and (b) shows the respective plasma discharge channels 931, 941. The flow velocity distribution inside and the flow velocity distribution on the substrate 10 treated with plasma are shown.

  The values of the results shown in the graph of FIG. 11 c are rxt cent. (Central part of each plasma discharge channel), rxt nozzle (discharge part of each plasma discharge channel), and subst. Cent. Temperature distribution (left side of the figure) and flow velocity distribution (the center of the distance between the discharge channel and the substrate), subst. (The position on the substrate treated with plasma discharged through each plasma discharge channel) Right of the figure).

  As shown in FIGS. 11b and 11c, the tertiary design module has a somewhat uniform temperature distribution and flow velocity distribution in the longitudinal direction of each plasma discharge channel 931, 941 compared to the primary design module and the secondary design module. However, the temperature distribution and flow velocity distribution in the longitudinal direction of each plasma discharge channel 931, 941 were not uniform.

[Quaternary design module (invention)]
The module of the fourth order design is the same as the configuration of the plasma apparatus according to one embodiment of the present invention shown in FIG. That is, the fourth design module includes the center electrode 110, the first outer electrode 130 including the first plasma discharge channel 131, and the second outer electrode 140 including the second plasma discharge channel 141, the first gas guiding channel 1331, the second gas. A guide channel 1431, a first gas retention space 134 and a second gas retention space 144 are included. FIG. 12a is a front view of one surface parallel to the lengthwise direction of the plasma device according to the embodiment of the present invention shown in FIG.

  FIG. 12 b shows the temperature distribution and flow velocity distribution in each plasma discharge channel, and the temperature distribution and flow velocity distribution on the substrate treated with plasma, when plasma is generated and discharged in the fourth design module. 12 c is a graph showing the results of the temperature distribution and the flow velocity distribution shown in FIG. 12 b.

  In FIG. 12b, a shows the temperature distribution in the respective plasma discharge channels 131, 141 and the temperature distribution on the substrate 10 treated with plasma, and b shows the flow velocity in the respective plasma discharge channels 131, 141. 6 shows the distribution and flow velocity distribution at the substrate 10 treated with plasma.

  The values of the results displayed in the graph of FIG. 12c are rxt cent. (Central part of each plasma discharge channel), rxt nozzle (discharge part of each plasma discharge channel), and subst. Cent. Temperature distribution (the left side of the figure) and flow velocity distribution at the center of the distance between the plasma discharge channel and the substrate), subst. (The position on the substrate treated with plasma discharged through each plasma discharge channel) (Right side of the figure).

  As shown in FIGS. 12b and 12c, it was possible to obtain the result that the temperature distribution and the flow velocity distribution in the length direction of each plasma discharge channel 131, 141 of the fourth order design module become uniform.

  As can be seen from the simulation results of each design module, a plasma apparatus according to an embodiment of the present invention, which is different from the first design module to the third design module, corresponds to the fourth design module. The supply path of the plasma source gas injected into the first plasma discharge channel 131 and the second plasma discharge channel 141 includes the first gas guide channel 1331 and the second gas guide channel 1431 and the connection hole 1332 between the first channels and the second The gas is supplied via the connection hole 1432 between the channels, the first gas retention space 134 and the second gas retention space 144. Therefore, it is possible to obtain an advantage that plasma is uniformly distributed and generated and discharged.

  Meanwhile, different plasma source gases may be injected in the first gas injection unit 133 and the second gas injection unit 143 in the process of processing the substrate 10. Here, the plasma source gas includes a plasma generating gas and a gas injected for surface treatment of the substrate 10. As an example, such a plasma apparatus according to the present invention performs a step of injecting different plasma source gases into the first gas injection unit 133 and the second gas injection unit 143 to planarize the rough surface of the substrate 10. Can. The roughness of the surface of the substrate 10 can be improved by the plasma uniformly discharged toward the substrate 10 in this process.

  In order to prove this, the inventor of the present invention carried out the substrate planarization step in the following manner.

1. Design of plasma apparatus For the planarization step, first, the length of the first plasma discharge channel 131 and the second plasma discharge channel 141 is 50 mm, the height is 25 mm, and the thickness is 1 mm, and the respective dielectrics The thickness of 121, 122 was designed to be 1 mm.

2. Type of plasma source gas First plasma discharge channel (Nozzle 1): N ₂ , NF ₃ , O ₂ injection Second plasma discharge channel (Nozzle 2): N ₂ , H ₂ injection 3. Planarization result

[Table 1]

As a result of performing the above-described substrate planarization process using the plasma according to an embodiment of the present invention, it can be confirmed that the surface roughness of the substrate has been improved by about 30% as shown in Table 1. The
The inventor of the present invention carried out the planarization process of the substrate 10 by injection of different plasma source gases, using the plasma apparatus according to one embodiment of the present invention.

  On the other hand, when different plasma source gases are injected in the first gas injection unit 133 and the second gas injection unit 143 in the process of processing the substrate 10, for example, in the first gas injection unit 133, hydrophilic gas is injected. In the second gas injection part 143, hydrophobic gas may be injected. In such a case, when the substrate 10 passes under the first outer electrode 130 and the second outer electrode 140, the plasma discharged from the first outer electrode 130 makes the surface of the substrate 10 primarily hydrophilic. The plasma that is processed and discharged from the second outer electrode 140 can treat the surface of the substrate 10 in a secondarily hydrophobic manner.

  As another example, in the process of processing the substrate 10, a gas for etching is injected into the first gas injection unit 133, and a gas for thin film deposition is injected into the second gas injection unit 143. Sometimes. In such a case, when the substrate 10 passes under the first outer electrode 130 and the second outer electrode 140, the plasma discharged from the first outer electrode 130 etches the surface of the substrate 10 to form a second outer surface. The plasma discharged from the electrode 140 can deposit a thin film on the surface of the etched substrate 10.

  Thus, the plasma apparatus according to an embodiment of the present invention can discharge dual-type plasma parallel to each other. Thereby, the surface of the substrate 10 can not only be subjected to the same process, for example, surface treatment such as etching continuous in a plurality of circuits, but also the surface treatment of the substrate 10 with the hydrophilic and hydrophobic surface treatments exemplified above. The surfaces can also be treated such that different surface properties coexist. Also, the surface of the substrate 10 can be treated such that different processes, eg, different steps such as etching and thin film deposition, are sequentially continued. Therefore, since surface treatment of the substrate 10 is possible in various ways for surface treatment of the substrate 10, there is an advantage that it can be applied to various processes for surface treatment in various ways.

The description of the presented embodiments is provided to enable any person skilled in the art of the present invention to utilize or practice the present invention. Various modifications of these embodiments will be apparent to those skilled in the art of the present invention, and the general principles defined herein are within the scope of the present invention and others. It can be applied to the embodiment of And, the present invention is not limited to the embodiments presented herein, but should be interpreted in a broad range consistent with the principles and the novel features presented herein.

Claims (6)

A central electrode in the form of a plate,
First and second dielectric layers laminated on both sides of the center electrode;
A first outer electrode in the form of a plate facing the first dielectric layer and the center, spaced apart in parallel with the first dielectric layer, and having a discharge port in the longitudinal direction of the center electrode formed on one side. A second outer electrode in the form of a plate facing the second dielectric layer so as to be symmetrical to the first outer electrode with an electrode interposed therebetween and spaced apart in parallel with the second dielectric layer; ,
A gas injection unit for injecting a plasma source gas into a separation space between the first outer electrode and the second outer electrode, and the first dielectric layer and the second dielectric layer;
A dual type plasma discharge apparatus comprising: a power supply device applying a voltage between the center electrode and the first outer electrode and the second outer electrode to generate plasma in the separated space. Plasma device equipped with a part. A separated space between the first outer electrode and the first dielectric layer generates a first plasma and discharges the first plasma along a longitudinal direction of the first outer electrode. Configure the channel,
A separated space between the second outer electrode and the second dielectric layer generates a second plasma, and discharges the second plasma along the longitudinal direction of the second outer electrode. A plasma apparatus comprising the dual type plasma discharger according to claim 1, wherein the channel is configured. The gas injection unit
A first gas guiding channel extending parallel to the lateral direction of the first outer electrode and disposed adjacent to the top of the first plasma discharge channel;
A connecting hole extending from the first gas guide channel toward the first plasma discharge channel and fluidly connected to the first plasma discharge channel and the first gas guide channel;
A second gas guiding channel extending parallel to the lateral direction of the second outer electrode and disposed adjacent to the top of the second plasma discharge channel;
A connecting hole extending from the second gas guide channel toward the second plasma discharge channel and coupled to the second plasma discharge channel and the second gas guide channel in fluid communication; The plasma apparatus provided with the dual type plasma discharge part of Claim 2 characterized by the above-mentioned. The plasma device
The first outer electrode is recessed in the direction toward the first gas guide channel from the side facing the first dielectric layer, and fluidly connected to the connection hole between the first plasma discharge channel and the first channel. First gas retention space,
The second outer electrode is recessed in the direction toward the second gas guide channel from the surface facing the second dielectric layer, and is fluidly connected to the connection hole between the second plasma discharge channel and the second channel. The plasma apparatus according to claim 3, further comprising a second gas retention space. 3. The plasma apparatus according to claim 2, wherein different plasma source gases are injected into the first plasma discharge channel and the second plasma discharge channel. The plasma device
The first outer electrode is provided through a surface disposed perpendicular to a surface of the first outer electrode facing the first dielectric layer, in a first direction in which a cooling fluid is injected and travels, and in a direction opposite to the first direction. A first coolant circulation channel for circulating the coolant fluid in a second direction;
The first outer electrode is provided to penetrate through one surface of the second outer electrode facing the second dielectric layer and disposed in a direction perpendicular to the first dielectric material layer and in a direction opposite to the first direction. The plasma apparatus according to claim 1, further comprising: a second cooling water circulation channel for circulating the cooling fluid in a second direction.