JP2019054236A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2019054236A5 JP2019054236A5 JP2018156041A JP2018156041A JP2019054236A5 JP 2019054236 A5 JP2019054236 A5 JP 2019054236A5 JP 2018156041 A JP2018156041 A JP 2018156041A JP 2018156041 A JP2018156041 A JP 2018156041A JP 2019054236 A5 JP2019054236 A5 JP 2019054236A5
- Authority
- JP
- Japan
- Prior art keywords
- composition ratio
- cladding layer
- barrier layers
- type cladding
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910002704 AlGaN Inorganic materials 0.000 claims description 27
- 238000005253 cladding Methods 0.000 claims description 26
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000010030 laminating Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 description 1
Description
本発明は、上記課題を解決することを目的として、第１のＡｌ組成比を有するｎ型ＡｌＧａＮによって形成されたｎ型クラッド層と、前記第１のＡｌ組成比よりも大きな第２のＡｌ組成比を有するＡｌＧａＮによって形成された複数の障壁層と前記第２のＡｌ組成比より小さいＡｌ組成比を有する複数の井戸層とをこの順に交互にＮ層ずつ積層してなる多重量子井戸層とを含む窒化物半導体発光素子であって、前記多重量子井戸層の前記複数の障壁層の前記第２のＡｌ組成比は、前記ｎ型ＡｌＧａＮ側から前記ｎ型クラッド層の反対側に向かって増加し、互いに隣合う前記障壁層同士の前記第２のＡｌ組成比の差は、前記ｎ型ＡｌＧａＮ側から前記ｎ型クラッド層の反対側に向かって大きくなる、窒化物半導体発光素子を提供する。また、本発明は、基板上にｎ型ＡｌＧａＮを有するｎ型クラッド層を形成する工程と、第１のＡｌ組成比よりも大きな第２のＡｌ組成比を有するＡｌＧａＮを有する複数の障壁層と前記第２のＡｌ組成比より小さいＡｌ組成比を有する複数の井戸層とをこの順に交互にＮ層ずつ積層してなる多重量子井戸層とを形成する工程とを備え、前記多重量子井戸層の前記複数の障壁層を形成する工程は、互いに隣合う前記障壁層同士の前記第２のＡｌ組成比の差が前記ｎ型ＡｌＧａＮ側から前記ｎ型クラッド層の反対側に向かって大きくなるように、前記ｎ型ＡｌＧａＮ側から前記ｎ型クラッド層の反対側に向かって前記Ａｌの供給量を増加させながら形成する、窒化物半導体発光素子の製造方法を提供する。 In order to solve the above problems, the present invention provides an n-type cladding layer formed of n-type AlGaN having a first Al composition ratio, and a second Al composition larger than the first Al composition ratio. A multiple quantum well layer formed by alternately laminating a plurality of barrier layers formed of AlGaN having a ratio and a plurality of well layers having an Al composition ratio smaller than the second Al composition ratio in this order. The second Al composition ratio of the plurality of barrier layers of the multiple quantum well layer increases from the n-type AlGaN side toward the opposite side of the n-type cladding layer. , the difference between the second Al composition ratio of the barrier layer between adjacent to each other, increases toward the opposite side of the n-type cladding layer from the n-type AlGaN side, to provide a nitride semiconductor light emitting element. The present invention also includes a step of forming an n-type cladding layer having n-type AlGaN on a substrate, a plurality of barrier layers having AlGaN having a second Al composition ratio larger than the first Al composition ratio, A plurality of well layers having an Al composition ratio smaller than a second Al composition ratio, and forming a multiple quantum well layer in which N layers are alternately stacked in this order, The step of forming a plurality of barrier layers is such that the difference in the second Al composition ratio between the adjacent barrier layers increases from the n-type AlGaN side toward the opposite side of the n-type cladding layer. Provided is a method for manufacturing a nitride semiconductor light emitting device, which is formed while increasing the supply amount of Al from the n-type AlGaN side toward the opposite side of the n-type cladding layer.
（実施の形態の作用及び効果）
以上説明したように、本発明の実施の形態に係る発光素子１は、ｎ型クラッド側３０からｎ型クラッド層３０の反対側に向かって増加し、互いに隣合う障壁層（５２ａ、５２ｂ、５２ｃ）同士の第２のＡｌ組成比の差がｎ型クラッド３０側からｎ型クラッド層３０の反対側に向かって大きくなるように構成された発光層５０を備えている。これにより、発光素子１の深紫外光の発光出力を上昇させることが可能となる。
(Operation and effect of the embodiment)
As described above, the light-emitting element 1 according to the embodiment of the present invention increases from the n-type cladding side 30 toward the opposite side of the n-type cladding layer 30 and adjacent barrier layers (52a, 52b, 52c). The light emitting layer 50 is configured so that the difference in the second Al composition ratio between them increases from the n-type cladding 30 side toward the opposite side of the n-type cladding layer 30 . Thereby, the light emission output of the deep ultraviolet light of the light emitting element 1 can be increased .
［１］第１のＡｌ組成比を有するｎ型ＡｌＧａＮによって形成されたｎ型クラッド層（３０）と、前記第１のＡｌ組成比よりも大きな第２のＡｌ組成比を有するＡｌＧａＮによって形成された複数の障壁層（５２ａ、５２ｂ、５２ｃ）と前記第２のＡｌ組成比より小さいＡｌ組成比を有する複数の井戸層とをこの順に交互にＮ層ずつ積層してなる多重量子井戸層とを備えた含む窒化物半導体発光素子（１）であって、前記多重量子井戸層の前記複数の障壁層（５２ａ、５２ｂ、５２ｃ）の前記第２のＡｌ組成比は、前記ｎ型ＡｌＧａＮ側から前記ｎ型クラッド層（３０）の反対側に向かって増加し、互いに隣合う前記障壁層（５２ａ、５２ｂ、５２ｃ）同士の前記第２のＡｌ組成比の差は、前記ｎ型ＡｌＧａＮ側から前記ｎ型クラッド層（３０）の反対側に向かって大きくなる窒化物半導体発光素子（１）。
［２］前記ｎ型クラッド層（３０）の前記第１のＡｌ組成比は、５０％〜６０％の間の値である、［１］に記載の窒化物半導体発光素子（１）。
［３］前記障壁層（５２ａ、５２ｂ、５２ｃ）の前記第２のＡｌ組成比は、８０％以上の値である、［１］又は［２］に記載の窒化物半導体発光素子（１）。
［４］前記多重量子井戸層の前記複数の障壁層は、前記ｎ型ＡｌＧａＮ側から前記ｎ型クラッド層の反対側に向かった前記第２のＡｌ組成比の増加率が１．１％〜２．７％の間の値である、［１］から［３］のいずれか１つに記載の窒化物半導体発光素子（１）。
［５］基板（１０）上にｎ型ＡｌＧａＮを有するｎ型クラッド層（３０）を形成する工程と、前記ｎ型クラッド層上に、第１のＡｌ組成比よりも大きな第２のＡｌ組成比を有するＡｌＧａＮを有する障壁層と前記第２のＡｌ組成比より小さいＡｌ組成比を有する複数の井戸層（５４ａ，５４ｂ，５４ｃ）とをこの順に交互にＮ層ずつ積層してなる多重量子井戸層とを形成する工程とを備え、前記多重量子井戸層の前記複数の障壁層を形成する工程は、互いに隣合う前記障壁層（５２ａ、５２ｂ、５２ｃ）同士の前記第２のＡｌ組成比の差が前記ｎ型ＡｌＧａＮ側から前記ｎ型クラッド層（３０）の反対側に向かって大きくなるように、前記ｎ型ＡｌＧａＮ側から前記ｎ型クラッド層（３０）の反対側に向かって前記Ａｌの供給量を増加させながら形成する、窒化物半導体発光素子（１）の製造方法。
[1] An n-type cladding layer (30) formed of n-type AlGaN having a first Al composition ratio and an AlGaN having a second Al composition ratio larger than the first Al composition ratio A multiple quantum well layer comprising a plurality of barrier layers (52a, 52b, 52c) and a plurality of well layers having an Al composition ratio smaller than the second Al composition ratio, the N layers being alternately stacked in this order; The second Al composition ratio of the plurality of barrier layers (52a, 52b, 52c) of the multiple quantum well layer is the n-type AlGaN side from the n-type AlGaN side. The difference in the second Al composition ratio between the barrier layers (52a, 52b, 52c) that increase toward the opposite side of the mold cladding layer (30) and are adjacent to each other is the n-type from the n-type AlGaN side. Clad layer (3 Larger nitride semiconductor light emitting device toward the opposite side of) (1).
[2] The nitride semiconductor light emitting element (1) according to [1], wherein the first Al composition ratio of the n-type cladding layer (30) is a value between 50% and 60%.
[3] The nitride semiconductor light emitting element (1) according to [1] or [2], wherein the second Al composition ratio of the barrier layers (52a, 52b, 52c) is a value of 80% or more.
[4] The plurality of barrier layers of the multiple quantum well layer have an increase rate of the second Al composition ratio from 1.1% to 2 from the n-type AlGaN side toward the opposite side of the n-type cladding layer. The nitride semiconductor light emitting device (1) according to any one of [1] to [3], which is a value between .7%.
[5] A step of forming an n-type cladding layer (30) having n-type AlGaN on the substrate (10), and a second Al composition ratio larger than the first Al composition ratio on the n-type cladding layer. Multi-quantum well layer formed by alternately laminating a barrier layer having AlGaN having a plurality of well layers (54a, 54b, 54c) having an Al composition ratio smaller than the second Al composition ratio in this order. The step of forming the plurality of barrier layers of the multiple quantum well layer includes a difference in the second Al composition ratio between the adjacent barrier layers (52a, 52b, 52c). The supply of Al from the n-type AlGaN side toward the opposite side of the n-type cladding layer (30) so that increases from the n-type AlGaN side toward the opposite side of the n-type cladding layer (30). Do not increase the amount To et forming, fabrication of a nitride semiconductor light emitting device (1).
Claims (5)
前記第１のＡｌ組成比よりも大きな第２のＡｌ組成比を有するＡｌＧａＮによって形成された複数の障壁層と前記第２のＡｌ組成比より小さいＡｌ組成比を有する複数の井戸層とをこの順に交互にＮ層ずつ積層してなる多重量子井戸層と
を含む窒化物半導体発光素子であって、
前記多重量子井戸層の前記複数の障壁層の前記第２のＡｌ組成比は、前記ｎ型ＡｌＧａＮ側から前記ｎ型クラッド層の反対側に向かって増加し、
互いに隣合う前記障壁層同士の前記第２のＡｌ組成比の差は、前記ｎ型ＡｌＧａＮ側から前記ｎ型クラッド層の反対側に向かって大きくなる、
窒化物半導体発光素子。 An n-type cladding layer formed of n-type AlGaN having a first Al composition ratio;
A plurality of barrier layers formed of AlGaN having a second Al composition ratio larger than the first Al composition ratio and a plurality of well layers having an Al composition ratio smaller than the second Al composition ratio in this order. A nitride semiconductor light emitting device comprising a multiple quantum well layer formed by alternately stacking N layers,
The second Al composition ratio of the plurality of barrier layers of the multiple quantum well layer increases from the n-type AlGaN side toward the opposite side of the n-type cladding layer;
The difference in the second Al composition ratio between the adjacent barrier layers increases from the n-type AlGaN side toward the opposite side of the n-type cladding layer .
Nitride semiconductor light emitting device.
請求項１に記載の窒化物半導体発光素子。 The first Al composition ratio of the n-type cladding layer is a value between 50% and 60%.
The nitride semiconductor light-emitting device according to claim 1.
請求項１又は２に記載の窒化物半導体発光素子。 The second Al composition ratio of the plurality of barrier layers is 80% or more;
The nitride semiconductor light-emitting device according to claim 1.
請求項１から３のいずれか１項に記載の窒化物半導体発光素子。 The plurality of barrier layers of the multiple quantum well layer have an increase rate of the second Al composition ratio from 1.1% to 2.7% from the n-type AlGaN side toward the opposite side of the n-type cladding layer. Is a value between
The nitride semiconductor light-emitting device according to claim 1.
第１のＡｌ組成比よりも大きな第２のＡｌ組成比を有するＡｌＧａＮを有する複数の障壁層と前記第２のＡｌ組成比より小さいＡｌ組成比を有する複数の井戸層とをこの順に交互にＮ層ずつ積層してなる多重量子井戸層とを形成する工程とを備え、
前記多重量子井戸層の前記複数の障壁層を形成する工程は、互いに隣合う前記障壁層同士の前記第２のＡｌ組成比の差が前記ｎ型ＡｌＧａＮ側から前記ｎ型クラッド層の反対側に向かって大きくなるように、前記ｎ型ＡｌＧａＮ側から前記ｎ型クラッド層の反対側に向かって前記Ａｌの供給量を増加させながら形成する、
窒化物半導体発光素子の製造方法。 Forming an n-type cladding layer having n-type AlGaN on a substrate;
A plurality of barrier layers having AlGaN having a second Al composition ratio larger than the first Al composition ratio and a plurality of well layers having an Al composition ratio smaller than the second Al composition ratio are alternately N in this order. And a step of forming a multiple quantum well layer formed by laminating layers one by one,
In the step of forming the plurality of barrier layers of the multiple quantum well layer, the difference in the second Al composition ratio between the adjacent barrier layers is changed from the n-type AlGaN side to the opposite side of the n-type cladding layer. Forming while increasing the supply amount of Al from the n-type AlGaN side toward the opposite side of the n-type cladding layer so as to increase
A method for manufacturing a nitride semiconductor light emitting device.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018156041A JP2019054236A (en) | 2018-08-23 | 2018-08-23 | Nitride semiconductor light-emitting device, and method for manufacturing the same |
| JP2021149116A JP7194793B2 (en) | 2018-08-23 | 2021-09-14 | Nitride semiconductor light-emitting device and method for manufacturing nitride semiconductor light-emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018156041A JP2019054236A (en) | 2018-08-23 | 2018-08-23 | Nitride semiconductor light-emitting device, and method for manufacturing the same |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017174850A Division JP6392960B1 (en) | 2017-09-12 | 2017-09-12 | Nitride semiconductor light emitting device and method for manufacturing nitride semiconductor light emitting device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021149116A Division JP7194793B2 (en) | 2018-08-23 | 2021-09-14 | Nitride semiconductor light-emitting device and method for manufacturing nitride semiconductor light-emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2019054236A JP2019054236A (en) | 2019-04-04 |
| JP2019054236A5 true JP2019054236A5 (en) | 2019-11-07 |
Family
ID=66013920
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018156041A Pending JP2019054236A (en) | 2018-08-23 | 2018-08-23 | Nitride semiconductor light-emitting device, and method for manufacturing the same |
| JP2021149116A Active JP7194793B2 (en) | 2018-08-23 | 2021-09-14 | Nitride semiconductor light-emitting device and method for manufacturing nitride semiconductor light-emitting device |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021149116A Active JP7194793B2 (en) | 2018-08-23 | 2021-09-14 | Nitride semiconductor light-emitting device and method for manufacturing nitride semiconductor light-emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (2) | JP2019054236A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112201732B (en) * | 2020-09-16 | 2021-09-03 | 广东省科学院半导体研究所 | Ultraviolet LED quantum well growth method |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62123789A (en) * | 1985-11-22 | 1987-06-05 | Nec Corp | Multiple quantum well semiconductor laser |
| US4839899A (en) * | 1988-03-09 | 1989-06-13 | Xerox Corporation | Wavelength tuning of multiple quantum well (MQW) heterostructure lasers |
| JPH05102604A (en) * | 1991-10-11 | 1993-04-23 | Fuji Xerox Co Ltd | Semiconductor laser device |
| JPH07235732A (en) * | 1993-12-28 | 1995-09-05 | Nec Corp | Semiconductor laser |
| US5679965A (en) * | 1995-03-29 | 1997-10-21 | North Carolina State University | Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same |
| JPH10145004A (en) * | 1996-11-06 | 1998-05-29 | Toyoda Gosei Co Ltd | Gan system light emitting element |
| JPH1168158A (en) * | 1997-08-20 | 1999-03-09 | Sanyo Electric Co Ltd | Gallium nitride based compound semiconductor device |
| US6504171B1 (en) * | 2000-01-24 | 2003-01-07 | Lumileds Lighting, U.S., Llc | Chirped multi-well active region LED |
| JP2002270894A (en) * | 2001-03-08 | 2002-09-20 | Mitsubishi Cable Ind Ltd | Semiconductor light-emitting element |
| US6489636B1 (en) | 2001-03-29 | 2002-12-03 | Lumileds Lighting U.S., Llc | Indium gallium nitride smoothing structures for III-nitride devices |
| JP2003031902A (en) * | 2001-07-16 | 2003-01-31 | Denso Corp | Semiconductor laser |
| US7577172B2 (en) * | 2005-06-01 | 2009-08-18 | Agilent Technologies, Inc. | Active region of a light emitting device optimized for increased modulation speed operation |
| US7619238B2 (en) * | 2006-02-04 | 2009-11-17 | Sensor Electronic Technology, Inc. | Heterostructure including light generating structure contained in potential well |
| KR100826422B1 (en) | 2006-11-21 | 2008-04-29 | 삼성전기주식회사 | Nitride semiconductor light emitting device |
| KR100862497B1 (en) * | 2006-12-26 | 2008-10-08 | 삼성전기주식회사 | Nitride semiconductor device |
| JP5349849B2 (en) * | 2007-06-12 | 2013-11-20 | ソウル オプト デバイス カンパニー リミテッド | Light emitting diode with active region of multiple quantum well structure |
| US8519437B2 (en) | 2007-09-14 | 2013-08-27 | Cree, Inc. | Polarization doping in nitride based diodes |
| KR101459763B1 (en) | 2008-01-15 | 2014-11-12 | 엘지이노텍 주식회사 | Semiconductor light emitting device and fabrication method thereof |
| US8975616B2 (en) * | 2012-07-03 | 2015-03-10 | Liang Wang | Quantum efficiency of multiple quantum wells |
| CN103855262A (en) * | 2012-12-04 | 2014-06-11 | 同方光电科技有限公司 | Nitride LED epitaxy structure suitable for heavy current driving |
| JP5521068B1 (en) * | 2013-01-30 | 2014-06-11 | Ｄｏｗａエレクトロニクス株式会社 | Group III nitride semiconductor light emitting device |
| KR101954205B1 (en) * | 2013-02-04 | 2019-05-31 | 엘지이노텍 주식회사 | A light emitting device |
| US9647168B2 (en) | 2013-09-03 | 2017-05-09 | Sensor Electronic Technology, Inc. | Optoelectronic device with modulation doping |
| CN103887392B (en) | 2014-03-28 | 2017-04-05 | 西安神光皓瑞光电科技有限公司 | A kind of epitaxial growth method of raising LED luminous efficiencies |
| CN106537617B (en) | 2014-05-27 | 2019-04-16 | 斯兰纳Uv科技有限公司 | Use the advanced electronics structure of semiconductor structure and superlattices |
| US9196788B1 (en) * | 2014-09-08 | 2015-11-24 | Sandia Corporation | High extraction efficiency ultraviolet light-emitting diode |
| DE102015100029A1 (en) * | 2015-01-05 | 2016-07-07 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
| JP6092961B2 (en) * | 2015-07-30 | 2017-03-08 | Ｄｏｗａエレクトロニクス株式会社 | Group III nitride semiconductor light emitting device and method of manufacturing the same |
| CN105374912B (en) | 2015-10-28 | 2017-11-21 | 厦门市三安光电科技有限公司 | Light emitting diode and preparation method thereof |
| JP6917953B2 (en) | 2017-09-12 | 2021-08-11 | 日機装株式会社 | Nitride semiconductor light emitting device |
| JP6392960B1 (en) | 2017-09-12 | 2018-09-19 | 日機装株式会社 | Nitride semiconductor light emitting device and method for manufacturing nitride semiconductor light emitting device |
| JP6379265B1 (en) | 2017-09-12 | 2018-08-22 | 日機装株式会社 | Nitride semiconductor light emitting device and method for manufacturing nitride semiconductor light emitting device |
-
2018
- 2018-08-23 JP JP2018156041A patent/JP2019054236A/en active Pending
-
2021
- 2021-09-14 JP JP2021149116A patent/JP7194793B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2007281257A5 (en) | ||
| JP5135500B2 (en) | Nitride semiconductor device | |
| JP2019514224A5 (en) | ||
| JP5167974B2 (en) | Group III nitride compound semiconductor light emitting device and method of manufacturing the same | |
| JP2010098151A5 (en) | ||
| JP2007036298A5 (en) | ||
| CN111095579B (en) | Nitride semiconductor light-emitting element and method for manufacturing nitride semiconductor light-emitting element | |
| EP2639900A3 (en) | Semiconductor stack and vertical cavity surface emitting laser | |
| JP2008218746A5 (en) | ||
| JP2004087908A5 (en) | ||
| JP2010541223A5 (en) | ||
| JP2018531514A5 (en) | ||
| JP2015149342A5 (en) | ||
| JP5037557B2 (en) | Zinc oxide light emitting diode {ZincOxideLightEmittingDiode} | |
| JP2019054236A5 (en) | ||
| JP2006332365A5 (en) | ||
| JP2006245165A5 (en) | ||
| JP2008034850A5 (en) | ||
| JP2019054230A5 (en) | ||
| JP2005085932A5 (en) | Light emitting diode | |
| JP2013183126A (en) | Nitride semiconductor light-emitting element and method of manufacturing nitride semiconductor light-emitting element | |
| JP2009004781A (en) | Light emitting diode and method for manufacturing the same | |
| JP2015084453A5 (en) | ||
| JP2013098232A5 (en) | ||
| JP2001053338A5 (en) |