JP2019054164A - Shower head, processing device, and shower plate - Google Patents

Abstract

To provide a shower head capable of improving processing efficiency.SOLUTION: A shower head according to an embodiment includes a head and a magnetic field generating section. The head has a first surface and a second surface located on a side opposite to the first surface, is provided with a room at the inside thereof, and is also provided with a plurality of holes each of which opens to the first surface and the second surface facing the room to communicate with the room. The magnetic field generating section is configured to produce a magnetic field between the first surface and the second surface at the inside of each the plurality of holes.SELECTED DRAWING: Figure 3

Description

  Embodiments described herein relate generally to a shower head, a processing apparatus, and a shower plate.

  A processing apparatus including a shower head that discharges fluid from a plurality of holes to an object is known. For example, the processing apparatus forms a film on the surface of the object by converting the fluid discharged from the shower head into plasma.

JP 2010-021404 A

  In a processing apparatus provided with a shower head, the efficiency of processing in the processing apparatus may be improved by adjusting the density of particles contained in the fluid discharged from the holes.

  A shower head according to one embodiment includes a head and a magnetic field generator. The head has a first surface and a second surface located on the opposite side of the first surface, and a chamber is provided in the interior, and the head is provided on the first surface and the room, respectively. A plurality of holes are provided which open to the second surface facing and communicate with the room. The magnetic field generator is configured to generate a magnetic field between the first surface and the second surface inside the plurality of holes.

FIG. 1 is a cross-sectional view schematically showing a semiconductor manufacturing apparatus according to the first embodiment. FIG. 2 is a perspective view showing a part of the shower head according to the first embodiment. FIG. 3 is a cross-sectional view illustrating a part of the shower head according to the first embodiment. FIG. 4 is a cross-sectional view showing a part of the bottom wall of the first embodiment. FIG. 5 is a perspective view showing a part of the first wall and a plurality of magnets according to the first embodiment. FIG. 6 is a cross-sectional view showing a part of the bottom wall around one hole of the first embodiment. FIG. 7 is a perspective view showing a part of the first wall and a plurality of magnets according to the second embodiment. FIG. 8 is a plan view showing a first wall according to the third embodiment. FIG. 9 is a cross-sectional view showing a part of the shower head according to the fourth embodiment. FIG. 10 is a cross-sectional view showing a part of the bottom wall of the fourth embodiment. FIG. 11 is a schematic circuit diagram of the shower head according to the fourth embodiment.

(First embodiment)
Hereinafter, a first embodiment will be described with reference to FIGS. 1 to 6. In the present specification, basically, a vertically upward direction is defined as an upward direction and a vertically downward direction is defined as a downward direction. In the present specification, a plurality of expressions may be described for the constituent elements according to the embodiment and the description of the elements. The constituent elements and descriptions in which a plurality of expressions are made may be other expressions that are not described. Further, the constituent elements and descriptions that are not expressed in a plurality may be expressed in other ways that are not described.

  FIG. 1 is a cross-sectional view schematically showing a semiconductor manufacturing apparatus 10 according to the first embodiment. The semiconductor manufacturing apparatus 10 is an example of a processing apparatus, and may be referred to as a manufacturing apparatus, a processing apparatus, a discharge apparatus, a supply apparatus, a plasma processing apparatus, and an apparatus, for example. The processing apparatus is not limited to the semiconductor manufacturing apparatus 10 and may be another apparatus that performs processing such as processing, cleaning, and testing on the target object.

  As shown in each drawing, in this specification, an X axis, a Y axis, and a Z axis are defined. The X axis, the Y axis, and the Z axis are orthogonal to each other. The X axis is along the width of the semiconductor manufacturing apparatus 10. The Y axis is along the depth (length) of the semiconductor manufacturing apparatus 10. The Z axis is along the height of the semiconductor manufacturing apparatus 10. In the present embodiment, the Z axis extends in the vertical direction. The direction in which the Z axis extends may be different from the vertical direction.

  The semiconductor manufacturing apparatus 10 according to the first embodiment shown in FIG. 1 is, for example, a plasma chemical vapor deposition (CVD) apparatus. The semiconductor manufacturing apparatus 10 may be another apparatus. The semiconductor manufacturing apparatus 10 includes a manufacturing unit 11, a stage 12, a shower head 13, a gas supply device 14, and a control unit 16.

  The manufacturing unit 11 can also be referred to as a housing, for example. The stage 12 is an example of an arrangement unit, and may be referred to as a placement unit and a stand, for example. The shower head 13 may also be referred to as, for example, a flow path structure, a discharge device, a supply device, a jetting device, a distribution device, a discharge device, a member, and a component.

  A chamber 21 that can be hermetically sealed is provided inside the manufacturing unit 11. The chamber 21 may be referred to as a room or a space, for example. For example, the semiconductor manufacturing apparatus 10 processes a semiconductor wafer (hereinafter referred to as a wafer) W in the chamber 21. The wafer W is an example of an object. The manufacturing unit 11 includes an upper wall 23 and a side wall 24.

  The upper wall 23 has an inner surface 23a. The inner surface 23a is a substantially flat surface that faces downward. The side wall 24 has an inner side surface 24a. The inner side surface 24a is a surface facing in a substantially horizontal direction. The inner surface 23 a and the inner surface 24 a define a part of the chamber 21. That is, the inner surface 23 a and the inner surface 24 a face the inside of the chamber 21. A plurality of exhaust ports 27 are provided in the side wall 24. As the gas in the chamber 21 is sucked from the exhaust port 27, the chamber 21 is brought to a substantially vacuum.

  The stage 12 and the shower head 13 are disposed in the chamber 21. As shown in FIG. 1, a part of the stage 12 and a part of the shower head 13 may be located outside the chamber 21.

  The stage 12 has a support part 12a. The support portion 12 a is located in the chamber 21 and supports the wafer W toward the inner surface 23 a of the upper wall 23. In other words, the wafer W is placed on the stage 12. The stage 12 has a heater and can heat the wafer W supported by the support portion 12a.

  The stage 12 can fix the wafer W to the support portion 12a by sucking the wafer W, for example. Furthermore, the stage 12 is connected to a driving device such as a motor, and can rotate while supporting the wafer W.

  For example, the shower head 13 is detachably attached to the upper wall 23 of the manufacturing unit 11. The shower head 13 faces the wafer W supported by the support portion 12a of the stage 12 with a gap therebetween.

  The shower head 13 can discharge the gas G to the wafer W as indicated by an arrow in FIG. The gas G is an example of a fluid. The fluid is not limited to gas but may be other fluid such as liquid. For example, the gas G forms an oxide film or a nitride film on the wafer W. The gas G is not limited to this example.

  FIG. 2 is a perspective view illustrating a part of the shower head 13 according to the first embodiment. FIG. 3 is a cross-sectional view showing a part of the shower head 13 according to the first embodiment. As shown in FIG. 3, the shower head 13 includes a head body 31, a plurality of magnetic field generators 32, and a plurality of nonmagnetic parts 33. The head body 31 is an example of a head.

  The head body 31 is made of, for example, a material that is resistant to gas G and plasma P, is non-magnetic, and is a conductor. The head body 31 is not limited to this example. As shown in FIG. 2, the head main body 31 includes a diffusion part 35 and a pipe part 36.

  The diffusion portion 35 is formed in a substantially disk shape that spreads on the XY plane. The tube portion 36 is formed in a substantially cylindrical shape extending from the substantially central portion of the diffusing portion 35 in the positive direction along the Z axis (the direction in which the arrow of the Z axis faces, upward).

  As shown in FIG. 1, the pipe portion 36 penetrates the upper wall 23. For example, the shower head 13 is attached to the upper wall 23 of the manufacturing unit 11 by fixing the pipe portion 36 to the upper wall 23. The shower head 13 may be attached to the manufacturing unit 11 by other means.

  As shown in FIG. 2, the diffusion part 35 includes a bottom wall 41, a peripheral wall 42, and an upper wall 43. The bottom wall 41 is an example of a wall and a shower plate. Further, a diffusion chamber 45 is provided inside the diffusion portion 35. The diffusion chamber 45 is an example of a room, and may be referred to as a space, a passage, and a flow path, for example. The diffusion chamber 45 is surrounded by the bottom wall 41, the peripheral wall 42, and the upper wall 43.

  The bottom wall 41 is formed in a substantially disk shape that spreads on the XY plane. The bottom wall 41 has an outer surface 41a and an inner surface 41b. The outer surface 41a is an example of a first surface. The inner surface 41b is an example of a second surface.

  As shown in FIG. 3, the outer surface 41 a is a substantially flat surface that faces in the negative direction along the Z-axis (the direction opposite to the direction in which the arrow of the Z-axis faces, downward), and is negative in the showerhead 13 along the Z-axis. Located at the end of the direction. The outer surface 41 a faces the outside of the shower head 13. In other words, the outer surface 41 a forms a part of the outer surface of the shower head 13. The outer surface 41a may be a curved surface or may have irregularities. The outer surface 41a faces the wafer W supported by the support portion 12a of the stage 12 through a gap. In other words, the stage 12 supports the wafer W at a position where the outer surface 41a faces.

  The inner surface 41b is a substantially flat surface located on the opposite side of the outer surface 41a and facing in the positive direction along the Z axis. The inner surface 41b may be a curved surface or may have irregularities. The inner surface 41 b faces the diffusion chamber 45 and defines a part of the diffusion chamber 45.

  As shown in FIG. 2, the peripheral wall 42 is a substantially cylindrical wall extending from the edge of the bottom wall 41 in the positive direction along the Z axis. The upper wall 43 is formed in a substantially disk shape that spreads on the XY plane. The edge of the upper wall 43 is connected to the edge of the bottom wall 41 by the peripheral wall 42.

  A supply path 36 a is provided inside the pipe portion 36. The supply path 36 a extends in the direction along the Z axis and communicates with the diffusion chamber 45. The supply path 36a communicates with the gas supply apparatus 14 of FIG. 1 through, for example, a pipe. That is, the gas supply device 14 is connected to the diffusion chamber 45 via the pipe and the supply path 36a.

  As shown in FIG. 3, a plurality of holes 50 are provided in the bottom wall 41. The hole 50 can also be referred to as an opening, a through-hole, and a discharge port, for example. Each of the plurality of holes 50 opens to the outer surface 41 a and the inner surface 41 b, communicates with the diffusion chamber 45, and communicates with the outside of the shower head 13.

  In the present embodiment, the plurality of holes 50 have substantially the same shape. Note that the plurality of holes 50 may include a plurality of holes 50 having different shapes, or may include a plurality of holes 50 having different sizes.

  FIG. 4 is a cross-sectional view showing a part of the bottom wall 41 of the first embodiment. As shown in FIG. 4, the plurality of holes 50 each have a first passage 51 and a second passage 52. The 1st channel | path 51 may also be called an enlarged part, an enlarged diameter part, a discharge part, and a cavity, for example. The second passage 52 may also be referred to as a reduced portion, a reduced diameter portion, and a discharge path, for example.

  The first passage 51 is a hole having a substantially circular cross section that opens on the outer surface 41 a of the bottom wall 41. The second passage 52 is a hole having a substantially circular cross section that opens on the inner surface 41 b of the bottom wall 41. The first passage 51 and the second passage 52 extend substantially linearly in the direction along the Z axis. For this reason, the hole 50 extends in a direction along the Z axis. The inner diameter of the second passage 52 is shorter than the inner diameter of the first passage 51. In other words, the second passage 52 is narrower than the first passage 51.

  The second passage 52 communicates with the first passage 51. That is, the hole 50 extends in the negative direction along the Z-axis from the inner surface 41b, is enlarged at the connection portion between the first passage 51 and the second passage 52, and extends in the negative direction along the Z-axis to the outer surface 41a.

  The first passage 51 and the second passage 52 are disposed along the same central axis Ax. In other words, the first passage 51 and the second passage 52 are arranged on the same axis. Each of the plurality of holes 50 has a central axis Ax of the hole 50.

  The bottom wall 41 has a first wall 61 and a second wall 62. The first wall 61 and the second wall 62 are formed in a substantially disk shape that spreads on the XY plane. The length (thickness) of the first wall 61 in the direction along the Z axis is longer than the length (thickness) of the second wall 62.

  The first wall 61 includes the outer surface 41 a of the bottom wall 41. In other words, the first wall 61 forms the outer surface 41 a of the bottom wall 41. The first wall 61 has a first joint surface 61a that is located on the opposite side of the outer surface 41a and faces in the positive direction along the Z-axis.

  The first wall 61 is provided with the first passage 51 of the hole 50 and a part of the second passage 52. Furthermore, a plurality of depressions 65 are provided in the first wall 61. The depression 65 is an example of a space, and may be referred to as, for example, a recess, a hole, and a storage portion. The recess 65 opens on the first joint surface 61 a of the first wall 61.

  In the first embodiment, the recess 65 has a substantially annular cross section and extends along the central axis Ax. That is, the recess 65 extends in a direction rotating around the central axis Ax at a position spaced from the central axis Ax. The recess 65 surrounds the hole 50 via a gap. The recess 65 and the hole 50 surrounded by the recess 65 have a common center axis Ax and are arranged on the same axis. The depression 65 may be formed in other shapes.

  A part of the first passage 51 and a part of the second passage 52 of the hole 50 are surrounded by the recess 65. In other words, a part of the first passage 51 and a part of the second passage 52 are located inside the recess 65. The end of the recess 65 in the negative direction along the Z axis is separated from the end of the first passage 51 in the positive direction along the Z axis in the negative direction along the Z axis.

  The second wall 62 includes the inner surface 41 b of the bottom wall 41. In other words, the second wall 62 forms the inner surface 41 b of the bottom wall 41. The second wall 62 has a second joint surface 62a that is located on the opposite side of the inner surface 41b and faces in the negative direction along the Z-axis.

  The second wall 62 is attached to the first wall 61 by joining the second joining surface 62a to the first joining surface 61a. Thereby, the second wall 62 closes the recess 65. Thus, the recess 65 blocked by the second wall 62 is provided inside the head main body 31.

  A part of the second passage 52 of the hole 50 is provided in the second wall 62. By attaching the second wall 62 to the first wall 61, a part of the second passage 52 provided in the first wall 61 and the second passage 52 provided in the second wall 62 are provided. Communicate with a part of

  The plurality of magnetic field generators 32 have a plurality of magnets 71. The magnet 71 is a permanent magnet, for example. In the first embodiment, the magnet 71 has a substantially annular cross section, and is formed in a substantially cylindrical shape extending along the central axis Ax of the hole 50. The magnet 71 may be formed in other shapes.

  The S pole of the magnet 71 is provided at the end of the magnet 71 in the positive direction along the Z axis. The N pole of the magnet 71 is provided at the end of the magnet 71 in the negative direction along the Z axis. That is, the magnetization direction of the magnet 71 is a direction along the Z axis, and is along the direction in which the hole 50 extends. In the magnet 71, an N pole may be provided at the end in the positive direction along the Z axis, and an S pole may be provided at the end in the negative direction along the Z axis.

  FIG. 5 is a perspective view showing a part of the first wall 61 and the plurality of magnets 71 according to the first embodiment. As shown in FIG. 5, the plurality of magnets 71 are accommodated in the plurality of depressions 65. Thus, the bottom wall 41 has the magnet 71 of the magnetic field generation unit 32. In the first embodiment, the number of the plurality of depressions 65 is larger than the number of the plurality of magnets 71. For this reason, the plurality of magnets 71 are accommodated in some of the plurality of depressions 65. Note that the magnet 71 may be accommodated in all of the plurality of recesses 65, or the magnet 71 may be accommodated in one of the plurality of recesses 65.

  The magnet 71 accommodated in the depression 65 surrounds one hole 50 with a gap therebetween. The magnet 71 and the hole 50 surrounded by the magnet 71 have a common central axis Ax and are arranged on the same axis. The magnet 71 surrounds a part of the first passage 51 and a part of the second passage 52 of the hole 50. In other words, a part of the first passage 51 and a part of the second passage 52 are located inside the magnet 71. The end of the magnet 71 in the negative direction along the Z axis is separated from the end of the first passage 51 in the positive direction along the Z axis in the negative direction along the Z axis.

  As shown in FIG. 4, the magnet 71 generates a magnetic field M inside the hole 50. FIG. 4 shows an example of the lines of magnetic force of the magnetic field M by arrows. The magnetic field M generated by the magnet 71 has lines of magnetic force extending along the central axis Ax of the hole 50 surrounded by the magnet 71 between the outer surface 41 a and the inner surface 41 b of the bottom wall 41. The magnetic field M also has lines of magnetic force outside the magnet 71.

  As shown in FIG. 5, the nonmagnetic portion 33 has a substantially annular cross section like the magnet 71 and is formed in a substantially cylindrical shape extending along the central axis Ax. The nonmagnetic part 33 is resistant to the gas G and the plasma P, for example, and is made of a material that is a nonmagnetic substance and a conductor, like the head body 31. Note that the nonmagnetic portion 33 may be made of other materials.

  The plurality of nonmagnetic portions 33 are accommodated in the plurality of recesses 65. In the first embodiment, the number of the plurality of recesses 65 is larger than the number of the plurality of nonmagnetic portions 33. For this reason, the plurality of nonmagnetic portions 33 are accommodated in some of the plurality of recesses 65. In addition, the nonmagnetic part 33 may be accommodated in one of the plurality of depressions 65, or the nonmagnetic part 33 may not be accommodated in any of the plurality of depressions 65. As described above, the plurality of recesses 65 can accommodate the magnets 71 that are the nonmagnetic portion 33 or the magnetic field generating portion 32.

  As shown in FIG. 3, the plurality of holes 50 include a plurality of first holes 50A and a plurality of second holes 50B. The first holes 50 </ b> A are, for example, several holes 50 near the center of the bottom wall 41 among the plurality of holes 50. The second holes 50B are, for example, some of the holes 50 that are farther from the center of the bottom wall 41 than the first holes 50A.

  The first hole 50A and the second hole 50B have a common shape and size. For this reason, the first hole 50A and the second hole 50B have a first passage 51 and a second passage 52, respectively. The shape and size of the first hole 50A may be different from the shape and size of the second hole 50B.

  The plurality of magnetic field generation units 32 include a plurality of first magnetic field generation units 32A and a plurality of second magnetic field generation units 32B. The first magnetic field generators 32 </ b> A are, for example, several magnetic field generators 32 that are close to the center of the bottom wall 41 among the plurality of magnetic field generators 32. The second magnetic field generators 32 </ b> B are some of the plurality of magnetic field generators 32 that are farther from the center of the bottom wall 41 than the first magnetic field generator 32 </ b> A.

  Each of the first magnetic field generator 32A and the second magnetic field generator 32B has a magnet 71. The magnet 71 of the first magnetic field generator 32A surrounds the first hole 50A. The magnet 71 of the second magnetic field generator 32B surrounds the second hole 50B.

  The plurality of first magnetic field generators 32A generate a magnetic field M between the outer surface 41a and the inner surface 41b of the bottom wall 41 in the first hole 50A. The plurality of second magnetic field generators 32B generate a magnetic field M between the outer surface 41a and the inner surface 41b of the bottom wall 41 inside the second hole 50B.

  The magnetic flux density of the magnetic field M generated by the first magnetic field generator 32A is lower than the magnetic flux density of the magnetic field M generated by the second magnetic field generator 32B. That is, the first magnetic field generator 32A generates a magnetic field M having a magnetic flux density different from the magnetic flux density of the magnetic field M generated by the second magnetic field generator 32B in the second hole 50B. To cause. Note that the magnetic flux density of the magnetic field M generated by the first magnetic field generator 32A and the magnetic flux density of the magnetic field M generated by the second magnetic field generator 32B are not limited to this example.

  As shown in FIG. 4, the semiconductor manufacturing apparatus 10 further includes an AC power source 75. The AC power source 75 is an example of a power source. The AC power source 75 applies a high frequency voltage to the bottom wall 41 of the shower head 13 and the wafer W supported by the stage 12. The AC power supply 75 generates a potential difference between the bottom wall 41 and the wafer W.

  The gas supply device 14 shown in FIG. 1 is connected to the supply path 36 a of the shower head 13 and supplies the gas G from the supply path 36 a to the diffusion chamber 45. The gas supply device 14 includes a tank 14a and a valve 14b. The valve 14b is an example of an adjustment unit. The adjusting unit may be another device such as a pump.

  The tank 14a accommodates the gas G and is connected to the supply path 36a via the valve 14b and piping. By opening the valve 14b, the gas supply device 14 supplies the gas G in the tank 14a to the supply path 36a. When the valve 14b is closed, the gas supply device 14 stops the supply of the gas G. Furthermore, the flow rate of the gas G is adjusted by adjusting the opening / closing amount of the valve 14b. Thus, the valve 14b can adjust the supply state of the gas G.

  The control unit 16 includes, for example, a processing device such as a CPU and a storage device such as a ROM or a RAM. The control unit 16 controls, for example, the stage 12, the gas supply device 14, and the AC power supply 75.

  The semiconductor manufacturing apparatus 10 forms the film C in FIG. 4 on the wafer W in the chamber 21 as described below. The film C is, for example, an oxide film or a nitride film. The control unit 16 opens the valve 14 b of the gas supply device 14 and causes the shower head 13 to supply the gas G. The gas G is supplied to the diffusion chamber 45 through the supply path 36a. The gas G diffuses in the diffusion chamber 45, for example, in a direction along the XY plane. The gas G is discharged from the plurality of holes 50 communicating with the diffusion chamber 45 toward the wafer W disposed on the stage 12.

  Further, as shown in FIG. 4, the control unit 16 generates a potential difference between the bottom wall 41 and the wafer W by the AC power supply 75. As a result, the gas G is converted into plasma between the bottom wall 41 of the shower head 13 and the wafer W to generate plasma P. The gas G and plasma P grow a film C on the surface of the wafer W. Thus, the film C is grown on the surface of the wafer W by plasma CVD that generates the plasma P, and the wafer W on which the film C is formed is manufactured.

  FIG. 6 is a cross-sectional view showing a part of the bottom wall 41 around one hole 50 according to the first embodiment. As shown in FIG. 6, high-density plasma PH is generated inside the first passage 51 of the hole 50. The high density plasma PH is a plasma having a higher density than the plasma P between the bottom wall 41 and the wafer W. For example, the high-density plasma PH is generated as follows.

  As described above, the magnet 71 generates the magnetic field M inside the hole 50. In general, charged particles are swirled around the lines of magnetic force by the Lorentz force in the magnetic field M. For example, an electron PE or an ion (radical) PI that is a particle that is contained in the gas G and the plasma P and has a charge rotates around the magnetic force line of the magnetic field M. Since the electronic PE is lighter than the ion PI, it is susceptible to Lorentz force.

  Inside the first passage 51 of the hole 50, the magnetic field M is generated and the magnetic lines of force of the magnetic field M are concentrated. For this reason, the density of the electronic PE in the first passage 51 is improved by the rotation of the electronic PE around the magnetic field lines of the magnetic field M. According to another expression, inside the first passage 51, the electron PE is trapped (captured) by the magnetic field lines of the magnetic field M. For this reason, the electron PE easily collides with the atom PA inside the first passage 51. That is, ionization of the atom PA and gasification of the gas G are promoted, and the density of the plasma P in the first passage 51 is improved. Accordingly, high-density plasma PH is generated in the first passage 51.

  Furthermore, when the AC power supply 75 applies a voltage to the bottom wall 41 provided with the first passage 51 wider than the second passage 52, a hollow cathode discharge is generated inside the first passage 51. Due to the hollow cathode discharge, the electron PE reciprocates around the central axis Ax in the first passage 51. For this reason, the density of the electron PE inside the first passage 51 is improved, and the electron PE easily collides with the atom PA. That is, ionization of the atom PA and gasification of the gas G are promoted, and the density of the plasma P in the first passage 51 is improved. Accordingly, high-density plasma PH is generated in the first passage 51.

  As described above, the density in the first passage 51 is improved by the magnetic field M and the hollow cathode discharge, and the high-density plasma PH is generated in the first passage 51. The density of the high-density plasma PH generated in the first passage 51 surrounded by the magnet 71 is higher than the density of the high-density plasma PH generated in the first passage 51 surrounded by the nonmagnetic portion 33.

  Further, the magnetic flux density of the magnetic field M of the first magnetic field generating unit 32A surrounding the first hole 50A near the center of the bottom wall 41 is the second magnetic field generation surrounding the second hole 50B far from the center of the bottom wall 41. It is lower than the magnetic flux density of the magnetic field M of the part 32B. For this reason, the density of the high-density plasma PH generated in the first passage 51 of the first hole 50A is lower than the density of the high-density plasma PH generated in the first passage 51 of the second hole 50B.

  As described above, any one of the first magnetic field generation unit 32A, the second magnetic field generation unit 32B, and the nonmagnetic unit 33 is selectively accommodated in the plurality of depressions 65, whereby the outer surface of the bottom wall 41 is obtained. The density of the high-density plasma PH in the direction along the line 41a (in-plane direction) is adjusted. For example, the density of the high-density plasma PH and the whole plasma P including the high-density plasma PH is adjusted so that the film C grows uniformly on the wafer W according to the type of the gas G.

  The shower head 13 is manufactured, for example, by additive manufacturing using a three-dimensional printer. Thereby, the shower head 13 in which the magnetic field generator 32 is disposed inside the bottom wall 41 is easily manufactured. In addition, the manufacturing method of the shower head 13 is not restricted to this example.

  In the semiconductor manufacturing apparatus 10 including the shower head 13 according to the first embodiment described above, the magnetic field generator 32 generates the magnetic field M between the outer surface 41a and the inner surface 41b in the plurality of holes 50. For this reason, the magnetic field lines of the magnetic field M pass through the hole 50. For example, when the gas G discharged from the diffusion chamber 45 through the plurality of holes 50 to the outside of the head main body 31 has charged particles (electron PE and ions PI), the particles move around the lines of magnetic force by Lorentz force. Turn. That is, since the particles gather around the magnetic field lines, the density of the particles in the hole 50 through which the magnetic field lines pass and in the vicinity of the hole 50 is improved. By improving the density of the electron PE that is the particle, ionization due to collision between the electron PE and the atom PA of the gas G is likely to occur, and the gas G is easily converted into plasma. Therefore, the density of the plasma P is improved, and the film forming speed in the semiconductor manufacturing apparatus 10 including the shower head 13 is improved. In other words, the efficiency of the film C forming process in the semiconductor manufacturing apparatus 10 is improved.

  The magnetization direction of the magnetic field generator 32 is along the direction in which the plurality of holes 50 extend. Thereby, it is possible to suppress the magnetic lines of force from interfering with the head main body 31, and the density of particles such as the electron PE is easily improved in the hole 50 and in the vicinity of the hole 50.

  The head body 31 is made of a nonmagnetic material. Thereby, it is suppressed that the whole head main body 31 is magnetized by the magnetic field generation part 32, and it becomes easy to control the concentration of particles such as the electron PE by the magnetic field M.

  The magnetic field generator 32 is accommodated in one of the plurality of recesses 65 provided in the head body 31, and the nonmagnetic portion 33 made of a nonmagnetic material is accommodated in the other one of the plurality of recesses 65. Is done. That is, by selectively accommodating the magnetic field generating unit 32 or the nonmagnetic unit 33 in the plurality of depressions 65, the density of the plasma P can be adjusted in a direction parallel to the outer surface 41a, for example, depending on the type of the gas G. it can. In other words, the distribution of the plasma P can be controlled.

  The magnetic field generator 32 surrounds at least one of the plurality of holes 50. In the present embodiment, each of the plurality of holes 50 is surrounded by one of the plurality of magnets 71. Thereby, the center of the magnetic force line of the magnetic field M generated by the magnet 71 and the center axis Ax of the hole 50 can be made to coincide with each other, and the density of particles such as the electron PE is improved inside the hole 50 and in the vicinity of the hole 50. It becomes easy.

  The first magnetic field generator 32A generates a magnetic field M having a magnetic flux density different from the magnetic flux density of the magnetic field M generated by the second magnetic field generator 32B in the second hole 50B, in the first hole 50A. It is possible to make it. Thereby, according to the kind of gas G, the density of the plasma P can be adjusted in the direction parallel to the outer surface 41a, for example.

  The AC power source 75 generates a hollow cathode discharge in the first passage 51 that is wider than the second passage 52. As a result, particles having a charge such as an electron PE reciprocate inside the first passage 51, so that the density of particles inside the first passage 51 is improved. By improving the density of the electron PE that is the particle, ionization due to collision between the electron PE and the atom PA of the gas G is likely to occur, and the gas G is easily converted into plasma. Therefore, the density of the plasma P is improved, and for example, the film forming speed in the semiconductor manufacturing apparatus 10 is improved.

(Second Embodiment)
Hereinafter, the second embodiment will be described with reference to FIG. In the following description of the plurality of embodiments, components having the same functions as the components already described are denoted by the same reference numerals as those described above, and further description may be omitted. . In addition, a plurality of components to which the same reference numerals are attached do not necessarily have the same functions and properties, and may have different functions and properties according to each embodiment.

  FIG. 7 is a perspective view showing a part of the first wall 61 and a plurality of magnets 71 according to the second embodiment. As shown in FIG. 7, in the second embodiment, the recess 65 and the magnet 71 or the nonmagnetic portion 33 accommodated in the recess 65 surround the plurality of holes 50.

  The distance (for example, the shortest distance) between each of the plurality of holes 50 and the magnet 71 or the nonmagnetic portion 33 surrounding the hole 50 is substantially equal. In addition, the distance between the hole 50 and the magnet 71 or the nonmagnetic part 33 may be uneven.

  The magnet 71 generates a magnetic field M in the plurality of holes 50 surrounded by the magnet 71. The magnetic field M generated by the magnet 71 has lines of magnetic force extending along the central axis Ax of the hole 50 surrounded by the magnet 71 between the outer surface 41 a and the inner surface 41 b of the bottom wall 41.

  In the semiconductor manufacturing apparatus 10 including the shower head 13 according to the second embodiment described above, the magnetic field generator 32 surrounds at least one of the plurality of holes 50. When the magnetic field generator 32 surrounds the plurality of holes 50 as in the present embodiment, the magnetic field M can be generated inside the plurality of holes 50 by one magnetic field generator 32. The number can be reduced. Further, the distances between the plurality of magnetic field generation units 32 and the plurality of holes 50 are equal. Thereby, the strength of the magnetic field M generated inside the plurality of holes 50 can be made substantially uniform.

(Third embodiment)
The third embodiment will be described below with reference to FIG. FIG. 8 is a plan view showing the first wall 61 according to the third embodiment. As shown in FIG. 8, in the third embodiment, the magnet 71 and the nonmagnetic portion 33 are formed in a rod shape. For example, the recess 65, the magnet 71, and the nonmagnetic portion 33 are formed in a columnar shape extending in the direction along the Z axis. FIG. 8 shows the magnet 71 and the nonmagnetic portion 33 with hatching for understanding. In addition, the hollow 65, the magnet 71, and the nonmagnetic part 33 may be formed in other shapes.

  The distance between each of the plurality of holes 50 and the magnet 71 or the nonmagnetic portion 33 adjacent to the hole 50 is substantially equal. In addition, the distance between the hole 50 and the magnet 71 or the nonmagnetic part 33 may be uneven.

  The magnet 71 generates a magnetic field M in the plurality of holes 50 adjacent to the magnet 71. The magnetic field M generated by the magnet 71 has lines of magnetic force extending along the central axis Ax of the hole 50 surrounded by the magnet 71 between the outer surface 41 a and the inner surface 41 b of the bottom wall 41.

  In the semiconductor manufacturing apparatus 10 including the shower head 13 according to the third embodiment described above, the magnetic field generator 32 is formed in a column shape extending in the direction along the Z axis. Thereby, the freedom degree of arrangement | positioning of the magnetic field generation | occurrence | production part 32 improves. Further, the distances between the plurality of magnetic field generation units 32 and the plurality of holes 50 are equal. Thereby, the strength of the magnetic field M generated inside the plurality of holes 50 can be made substantially uniform.

(Fourth embodiment)
The fourth embodiment will be described below with reference to FIGS. 9 to 11. FIG. 9 is a cross-sectional view showing a part of the shower head 13 according to the fourth embodiment. As shown in FIG. 9, the plurality of magnetic field generation units 32 of the fourth embodiment have a plurality of coils 81.

  The plurality of coils 81 are accommodated in the plurality of depressions 65. Thus, the bottom wall 41 has the coil 81 of the magnetic field generation unit 32. The coil 81 is formed in a cylindrical shape wound around the hole 50 surrounded by the recess 65. According to another expression, the coil 81 is formed in a cylindrical shape along the central axis Ax of the hole 50. The coil 81 may be formed in other shapes.

  FIG. 10 is a cross-sectional view showing a part of the bottom wall 41 of the fourth embodiment. As shown in FIG. 10, the coil 81 is magnetized by passing a current, functions as an electromagnet, and generates a magnetic field M. The magnetization direction of the coil 81 is a direction along the Z axis, and is along the direction in which the hole 50 extends. The direction of the magnetic field M generated by the coil 81 varies depending on the current flowing through the coil 81.

  In the fourth embodiment, the second wall 62 has a plurality of cylindrical portions 62b. The cylindrical portion 62 b protrudes from the second joint surface 62 a and is accommodated in at least one of the plurality of depressions 65. The coil 81 is provided inside the cylindrical portion 62b. Since the cylindrical portion 62 b is accommodated in the recess 65, the coil 81 is accommodated in the recess 65.

  Furthermore, as shown in FIG. 9, in the fourth embodiment, the nonmagnetic portion 33 is formed integrally with the second wall 62. The nonmagnetic part 33 protrudes from the second bonding surface 62 a and is accommodated in at least one of the plurality of depressions 65.

  In the fourth embodiment, the second wall 62 is made of a synthetic resin such as an engineering plastic. The coil 81 is provided inside the second wall 62 by insert molding, for example. The second wall 62 is located inside the shower head 13. For this reason, exposure of the second wall 62 to the plasma P is suppressed.

  FIG. 11 is a schematic circuit diagram of the shower head 13 according to the fourth embodiment. As shown in FIG. 11, the semiconductor manufacturing apparatus 10 of the fourth embodiment includes a power supply 85, a plurality of wirings 86, a first variable resistor 87, a second variable resistor 88, and a third variable resistor. And a variable resistor 89.

  The power source 85 is, for example, a DC power source. The power source 85 may be an AC power source. The power source 85 is located outside the shower head 13. The wiring 86 electrically connects the power source 85 and the plurality of coils 81. The wiring 86 is passed through the second wall 62, the peripheral wall 42, the upper wall 43, and the inside of the pipe portion 36 by, for example, insert molding. The wiring 86 is not limited to this example.

  The plurality of coils 81 include a plurality of first coils 81A, a plurality of second coils 81B, and a plurality of third coils 81C. The first coil 81A is an example of a first magnetic field generator. The second coil 81B is an example of a second magnetic field generator.

  The first coils 81 </ b> A are, for example, several coils 81 that are close to the center of the bottom wall 41 among the plurality of coils 81. The second coils 81 </ b> B are some of the coils 81 that are farther from the center of the bottom wall 41 than the first coil 81 </ b> A. The third coil 81 </ b> C is some of the coils 81 that are farther from the center of the bottom wall 41 than the second coil 81 </ b> B.

  The plurality of first coils 81 </ b> A are connected in series by the wiring 86 and also connected to the power supply 85. The first variable resistor 87 is provided between the plurality of first coils 81A and the power source 85, and adjusts the value of current flowing from the power source 85 to the plurality of first coils 81A.

  The plurality of second coils 81 </ b> B are connected in series by the wiring 86 and also connected to the power supply 85. The second variable resistor 88 is provided between the plurality of second coils 81B and the power source 85, and adjusts the current value flowing from the power source 85 to the plurality of second coils 81B.

  The plurality of third coils 81 </ b> C are connected in series by the wiring 86 and are also connected to the power supply 85. The third variable resistor 89 is provided between the plurality of third coils 81C and the power supply 85, and adjusts the value of current flowing from the power supply 85 to the plurality of third coils 81C. Note that the plurality of first coils 81A, the plurality of second coils 81B, and the plurality of third coils 81C may be connected in parallel.

  The control unit 16 shown in FIG. 1 individually controls the first to third variable resistors 87 to 89. For example, the control unit 16 makes the electric resistance values of the first to third variable resistors 87 to 89 different from each other. As a result, the first coil 81 </ b> A generates a magnetic field M having a magnetic flux density different from the magnetic flux density of the magnetic field M generated by the second coil 81 </ b> B inside the hole 50. As shown in FIG. 9, for example, the first coil 81A generates a magnetic field M inside the first hole 50A, and the second coil 81B generates a magnetic field M inside the second hole 50B. .

  Further, the second coil 81 </ b> B generates a magnetic field M having a magnetic flux density different from the magnetic flux density of the magnetic field M generated by the third coil 81 </ b> C inside the hole 50. Thus, the magnetic flux densities of the magnetic fields M generated by the first coil 81A, the second coil 81B, and the third coil 81C are different.

  The first to third variable resistors 87 to 89 have different current values flowing through the first coil 81A, the second coil 81B, and the third coil 81C, so that the first coil 81A and the second coil 81A The magnetic flux density of the magnetic field M generated by the coil 81B and the third coil 81C is adjusted. Thereby, the density of the high-density plasma PH in the direction along the outer surface 41a of the bottom wall 41 is adjusted. For example, the density of the high-density plasma PH and the whole plasma P including the high-density plasma PH is adjusted so that the film C grows uniformly on the wafer W according to the type of the gas G.

  The magnetic flux density of the magnetic field M generated by each of the first coil 81A, the second coil 81B, and the third coil 81C may be adjusted by other means. For example, the switch electrically connects (ON) or disconnects (OFF) between the power supply 85 and each of the first coil 81A, the second coil 81B, and the third coil 81C depending on the type of the gas G. )

  In the semiconductor manufacturing apparatus 10 including the shower head 13 according to the fourth embodiment described above, the magnetic field generator 32 has a coil 81 wound so as to surround at least one of the plurality of holes 50. Thereby, the magnetic flux density of the magnetic field M can be adjusted by the current flowing through the coil 81. The coil 81 is an example of a coil and a magnetic field generator. In other words, the magnetic field generator may be provided in the shower head 13 and can generate a magnetic field. In the present embodiment, the power source 85 that supplies current to the coil 81 is provided outside the shower head 13, but the power source 85 may be provided inside the shower head 13.

  In the first to fourth embodiments described above, the hole 50 has the first passage 51 and the second passage 52, and a hollow cathode discharge is generated inside the first passage 51. However, the hole 50 may be a hole having a constant inner diameter. Also in this case, the electron PE is trapped by the magnetic force lines of the magnetic field M in the vicinity of the hole 50 outside the shower head 13 by the magnetic field M. For this reason, the electron PE easily collides with the atom PA between the shower head 13 and the wafer W, and the density of the plasma P is improved.

  In the first to fourth embodiments, the bottom wall 41 is formed integrally with the shower head 13. However, the bottom wall 41 may be a shower plate as an independent part. For example, the diffusion chamber 45 is formed between the inner surface 41 b of the bottom wall 41 and the inner surface 23 a of the upper wall 23 by attaching the bottom wall 41 that is a shower plate to the chamber 21. The gas G is supplied from the gas supply device 14 to the diffusion chamber 45.

  According to at least one embodiment described above, the magnetic field generator generates a magnetic field between the first surface and the second surface inside the plurality of holes. For this reason, lines of magnetic force pass through the hole. For example, when the fluid discharged from the room through the plurality of holes to the outside of the head has charged particles, the particles swirl around the lines of magnetic force by Lorentz force. That is, since the particles gather around the magnetic lines of force, the density of the particles is improved in and near the holes through which the lines of magnetic force pass. By increasing the density of the electrons, which are particles, ionization due to collision between electrons and fluid atoms is likely to occur, and the fluid is likely to become plasma. Therefore, the density is improved and, for example, the efficiency of plasma CVD is improved.

  Although several embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

  DESCRIPTION OF SYMBOLS 10 ... Semiconductor manufacturing apparatus, 12 ... Stage, 13 ... Shower head, 14 ... Gas supply apparatus, 14b ... Valve | bulb, 31 ... Head main body, 32 ... Magnetic field generation part, 32A ... 1st magnetic field generation part, 32B ... 2nd Magnetic field generating part 33 ... non-magnetic part 41 ... bottom wall 41a ... outer surface 41b ... inner surface 45 ... diffusion chamber 50 ... hole 50A ... first hole 50B ... second hole 51 ... first , 52 ... second passage, 65 ... depression, 71 ... magnet, 75 ... AC power supply, 81 ... coil, 81A ... first coil, 81B ... second coil, 81C ... third coil, W ... Wafer, G ... gas, P ... plasma, Ax ... center axis, M ... magnetic field.

Claims (13)

A first surface and a second surface located on the opposite side of the first surface, wherein a room is provided therein, and each of the first surface and the room faces the room A head provided with a plurality of holes that open to two surfaces and communicate with the room;
A magnetic field generator configured to generate a magnetic field between the first surface and the second surface inside the plurality of holes;
A shower head comprising:   The shower head according to claim 1, wherein a magnetization direction of the magnetic field generation unit is along a direction in which the plurality of holes extend.   The shower head according to claim 1, wherein the head is made of a non-magnetic material. A nonmagnetic part made of a nonmagnetic material,
A plurality of spaces capable of accommodating the nonmagnetic part or the magnetic field generation part are provided inside the head,
The magnetic field generation unit is accommodated in one of the plurality of spaces, and the nonmagnetic portion is accommodated in the other one of the plurality of spaces.
The showerhead according to claim 3.   The shower head according to claim 3 or 4, wherein the magnetic field generation unit surrounds at least one of the plurality of holes.   The shower head according to claim 3 or 4, wherein the magnetic field generation unit includes a coil wound so as to surround at least one of the plurality of holes. The plurality of holes includes a first hole and a second hole,
The magnetic field generator includes a first magnetic field generator configured to generate a magnetic field between the first surface and the second surface inside the first hole, and the second hole A second magnetic field generator configured to generate a magnetic field between the first surface and the second surface inside,
The first magnetic field generation unit generates a magnetic field having a magnetic flux density different from the magnetic flux density of the magnetic field generated by the second magnetic field generation unit in the second hole. Is possible,
The shower head according to any one of claims 1 to 6. The magnetic field generator includes a plurality of magnets each configured to generate a magnetic field between the first surface and the second surface;
Each of the plurality of holes is surrounded by one of the plurality of magnets;
The shower head according to claim 1. An arrangement portion configured to arrange an object;
The shower head according to any one of claims 1 to 8, wherein the shower head is configured to supply a fluid to the room and to discharge the fluid from the plurality of holes to the object disposed in the placement unit.
An adjustment unit capable of adjusting a supply state of the fluid supplied to the room;
A processing apparatus comprising: A power source configured to generate a potential difference between the head and the object to convert the fluid into plasma between the head and the object;
Further comprising
Each of the plurality of holes includes a first passage opening in the first surface, and a second passage opening in the second surface and narrower than the first passage;
The power source causes a hollow cathode discharge inside the first passage;
The processing apparatus according to claim 9. A first surface and a second surface located on the opposite side of the first surface, each provided with a plurality of holes that open to the first surface and the second surface; And the wall,
A magnetic field generator configured to generate a magnetic field between the first surface and the second surface inside the plurality of holes;
A shower plate.   The shower plate according to claim 11, wherein the magnetic field generator surrounds at least one of the plurality of holes.   Each of the plurality of holes includes a first passage that opens to the first surface, and a second passage that opens to the second surface and is narrower than the first passage. Item 12 shower plate.

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