JP2019046199A5 - - Google Patents

Download PDF

Info

Publication number
JP2019046199A5
JP2019046199A5 JP2017169032A JP2017169032A JP2019046199A5 JP 2019046199 A5 JP2019046199 A5 JP 2019046199A5 JP 2017169032 A JP2017169032 A JP 2017169032A JP 2017169032 A JP2017169032 A JP 2017169032A JP 2019046199 A5 JP2019046199 A5 JP 2019046199A5
Authority
JP
Japan
Prior art keywords
transistor
processor
cpu
memory device
gpu
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2017169032A
Other languages
Japanese (ja)
Other versions
JP2019046199A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2017169032A priority Critical patent/JP2019046199A/en
Priority claimed from JP2017169032A external-priority patent/JP2019046199A/en
Publication of JP2019046199A publication Critical patent/JP2019046199A/en
Publication of JP2019046199A5 publication Critical patent/JP2019046199A5/ja
Withdrawn legal-status Critical Current

Links

Claims (8)

CPU、GPUが設けられたチップを有するプロセッサであり、
前記CPU、前記GPUそれぞれは、1又は複数のパワーゲーティングが可能なパワードメインを有し、
前記CPUには、バックアップ回路が電気的に接続されているフリップフロップが設けられ、
前記GPUには、行列状に配置された複数の乗算器が設けられ、
前記乗算器は、第1トランジスタ、第2トランジスタ、容量素子および保持ノードを有し、
前記第2トランジスタのゲート、および前記容量素子の端子は前記保持ノードにそれぞれ電気的に接続され、
前記第1トランジスタは、前記保持ノードへのデータの書き込みを制御する機能をもち、
前記バックアップ回路のトランジスタ、前記乗算器の前記第1トランジスタそれぞれにおいて、チャネル形成領域は金属酸化物を有すプロセッサ。
It is a processor having a chip provided with a CPU and a GPU.
Each of the CPU and the GPU has one or more power domains capable of power gating.
The CPU is provided with a flip-flop to which a backup circuit is electrically connected.
The GPU is provided with a plurality of multipliers arranged in a matrix.
The multiplier comprises a first transistor, a second transistor, a capacitive element and a holding node.
The gate of the second transistor and the terminal of the capacitive element are electrically connected to the holding node, respectively.
The first transistor has a function of controlling writing of data to the holding node.
It said transistor backup circuits, in each of the first transistor of the multiplier, that the channel formation region have a metal oxide processor.
請求項1において、
前記バックアップ回路は、前記フリップフロップに積層されていプロセッサ。
In claim 1,
It said backup circuit may include a processor that is laminated to the flip-flop.
請求項1又は2において、
前記乗算器の前記保持ノードに書き込まれるデータは、アナログデータであプロセッサ。
In claim 1 or 2,
The data to be written to the hold node multipliers Oh Ru processor in analog data.
請求項1乃至3のいずれか一項において、
前記CPUには、更に第1メモリ装置が設けられ、
前記第1メモリ装置のメモリセルにおいて、書込みトランジスタのチャネル形成領域は金属酸化物で形成されているプロセッサ。
In any one of claims 1 to 3,
The CPU is further provided with a first memory device.
In the memory cell of the first memory device, a processor in which a channel forming region of a writing transistor is formed of a metal oxide.
請求項1乃至4のいずれか一項において、
前記CPUには、更に第2メモリ装置が設けられ、
前記第2メモリ装置のメモリセルには、バックアップ回路が設けられ、
前記バックアップ回路のトランジスタにおいて、チャネル形成領域は金属酸化物を有するプロセッサ。
In any one of claims 1 to 4,
The CPU is further provided with a second memory device.
A backup circuit is provided in the memory cell of the second memory device.
In the transistor of the backup circuit , the channel forming region is a processor having a metal oxide.
請求項1乃至5のいずれか一項において、
更に第3メモリ装置が前記チップに設けられ、
前記第3メモリ装置は、前記CPUまたは前記GPUがアクセス可能であり、
前記第3メモリ装置のメモリセルにおいて、書込みトランジスタのチャネル形成領域は金属酸化物で形成されているプロセッサ。
In any one of claims 1 to 5,
Further, a third memory device is provided on the chip.
The third memory device is accessible to the CPU or the GPU.
In the memory cell of the third memory device, the channel formation region of the write transistor is a processor formed of a metal oxide.
請求項1乃至6のいずれか一項において、
前記CPUは複数のCPUコアを備えるプロセッサ。
In any one of claims 1 to 6,
The CPU is a processor having a plurality of CPU cores.
請求項1乃至7のいずれか一項に記載のプロセッサが組み込まれている電子機器。 An electronic device incorporating the processor according to any one of claims 1 to 7.
JP2017169032A 2017-09-01 2017-09-01 Processor and electronic device Withdrawn JP2019046199A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2017169032A JP2019046199A (en) 2017-09-01 2017-09-01 Processor and electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017169032A JP2019046199A (en) 2017-09-01 2017-09-01 Processor and electronic device

Publications (2)

Publication Number Publication Date
JP2019046199A JP2019046199A (en) 2019-03-22
JP2019046199A5 true JP2019046199A5 (en) 2020-10-08

Family

ID=65814466

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017169032A Withdrawn JP2019046199A (en) 2017-09-01 2017-09-01 Processor and electronic device

Country Status (1)

Country Link
JP (1) JP2019046199A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021024083A1 (en) * 2019-08-08 2021-02-11 株式会社半導体エネルギー研究所 Semiconductor device
CN112465129B (en) * 2019-09-09 2024-01-09 上海登临科技有限公司 On-chip heterogeneous artificial intelligent processor
US20220276839A1 (en) * 2019-10-04 2022-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN114902414A (en) * 2019-12-27 2022-08-12 株式会社半导体能源研究所 Semiconductor device with a plurality of semiconductor chips
KR20230011931A (en) * 2020-05-15 2023-01-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 semiconductor device
CN113052751B (en) * 2021-04-27 2023-05-30 浙江水科文化集团有限公司 Artificial intelligence processing method
WO2023047228A1 (en) * 2021-09-22 2023-03-30 株式会社半導体エネルギー研究所 Electronic device and display system
WO2024095109A1 (en) * 2022-11-04 2024-05-10 株式会社半導体エネルギー研究所 Semiconductor device and operating method of semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8219758B2 (en) * 2009-07-10 2012-07-10 Apple Inc. Block-based non-transparent cache
KR102147870B1 (en) * 2012-01-23 2020-08-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP2016015475A (en) * 2014-06-13 2016-01-28 株式会社半導体エネルギー研究所 Semiconductor device and electronic apparatus
CN106797213B (en) * 2014-10-10 2021-02-02 株式会社半导体能源研究所 Logic circuit, processing unit, electronic component, and electronic apparatus
US9438234B2 (en) * 2014-11-21 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device including logic circuit
JP6674838B2 (en) * 2015-05-21 2020-04-01 株式会社半導体エネルギー研究所 Electronic equipment
US10177142B2 (en) * 2015-12-25 2019-01-08 Semiconductor Energy Laboratory Co., Ltd. Circuit, logic circuit, processor, electronic component, and electronic device

Similar Documents

Publication Publication Date Title
JP2019046199A5 (en)
JP2012231455A5 (en)
JP2013235644A5 (en) Memory circuit
JP2016054282A5 (en)
JP2011151796A5 (en)
TWI416707B (en) Memory circuits and routing of conductive layers thereof
JP2016076285A5 (en) Semiconductor device
JP2013179579A5 (en) Semiconductor device
JP2011119713A5 (en)
JP2013251894A5 (en)
JP2012256405A5 (en)
JP2018073453A5 (en) Storage device
JP2016115386A5 (en) Semiconductor device
JP2013243657A5 (en)
JP2018116758A5 (en)
JP2015188071A5 (en)
JP2019036280A5 (en) Graphics processing unit
TWI564895B (en) High voltage tolerant word-line driver
JP2016116220A5 (en)
JP2013009300A5 (en) Storage device
JP2014209402A5 (en)
JP2012212499A5 (en) Semiconductor device
JP2012256852A5 (en) Semiconductor device
JP2017138979A5 (en)
JP2009163860A5 (en)