JP2019026939A - Method for manufacturing semiconductor device, recording medium, and substrate processing apparatus - Google Patents

Abstract

To enhance processing in-plane uniformity.SOLUTION: The method for manufacturing a semiconductor device comprises the step of rotating a substrate support tool for supporting a substrate stored in a processing chamber by pillars; a first gas supply step of supplying first gas to the substrate from a first gas supply hole horizontally arranged on the outside of the substrate; the step of continuously supplying inert gas to the substrate from an inert gas supply hole positioned on the outside of the substrate; and the step of stopping the first gas while continuously supplying the inert gas to at least one space between the pillars arranged between the first gas supply hole and the substrate while rotating the substrate support tool.SELECTED DRAWING: Figure 5

Description

  The present invention relates to a semiconductor device manufacturing method, a recording medium, and a substrate processing apparatus.

  As a process of manufacturing a semiconductor device (device), a substrate process performed by supplying a processing gas to a substrate in a processing chamber, for example, a film forming process or an etching process may be performed.

  In substrate processing performed by supplying a processing gas to a substrate in a processing chamber, for example, it is desired to improve in-plane uniformity of processing.

  An object of the present invention is to provide a technique for improving in-plane uniformity of substrate processing.

According to one aspect of the invention,
A step of rotating a substrate support for supporting the substrate accommodated in the processing chamber with a pillar, and a first gas for supplying the first gas to the substrate from a first gas supply hole disposed horizontally outside the substrate; A supply step; a step of continuously supplying an inert gas to the substrate from an inert gas supply hole located outside the substrate; and a rotation of the substrate support between the first gas supply hole and the substrate. And a step of stopping the first gas while continuously supplying the inert gas continuously during at least one of the columns disposed.

  Since the flow of the processing gas is suppressed from being hindered by the pillar of the substrate support, the in-plane uniformity of the substrate processing using the processing gas can be improved.

FIG. 1 is a schematic configuration diagram of a processing furnace of a substrate processing apparatus preferably used in an embodiment of the present invention, and is a view showing a processing furnace part in a longitudinal sectional view. FIG. 2 is a schematic cross-sectional view taken along line AA of FIG. FIG. 3 is a block diagram showing a configuration of a controller included in the substrate processing apparatus shown in FIG. FIG. 4A is a schematic side view showing an example of a boat supporting wafers, and FIG. 4B is a schematic cross-sectional view taken along line BB in FIG. 4A. FIG. 4C is a schematic cross-sectional view showing an enlarged portion surrounded by a dotted line in FIG. FIG. 5A shows an example of the processing gas supply sequence (for one cycle), and FIG. 5B shows the relationship between the processing gas supply timing and the rotational position in the film forming process of the first embodiment. It is a timing chart which shows. FIGS. 6A and 6B are schematic views showing the supply ranges of TiCl 4 gas and NH 3 gas on the wafer in the first embodiment, respectively. FIG. 7 is a schematic diagram showing the flow of TiCl 4 gas in the first embodiment. FIG. 8 is a timing chart showing the relationship between the processing gas supply timing and the rotational direction position in the film forming process of the second embodiment. FIG. 9 is a timing chart showing the relationship between the processing gas supply timing and the rotational direction position in the film forming process of the third embodiment. FIG. 10A is a schematic diagram showing the supply range of TiCl 4 gas on the wafer in the comparative embodiment, and FIG. 10B is a schematic diagram showing the flow of TiCl 4 gas in the comparative embodiment. FIG. 11 is a timing chart showing the relationship between the processing gas supply timing and the rotational direction position in the film forming process of the fourth embodiment. FIG. 12 is a timing chart showing the relationship between the processing gas supply timing and the rotational direction position in the film forming process of the fifth embodiment. FIG. 13 is a timing chart showing the relationship between the processing gas supply timing and the rotational direction position in the film forming process of the sixth embodiment. FIG. 14 is a timing chart showing the relationship between the processing gas supply timing and the rotational direction position in the film forming process of the seventh embodiment. FIG. 15 is a timing chart showing the relationship between the processing gas supply timing and the rotational direction position in the film forming process of the eighth embodiment. FIG. 16 is a timing chart showing the relationship between the processing gas supply timing and the rotational direction position in the film forming process of the ninth embodiment. FIG. 17 is a timing chart showing the relationship between the processing gas supply timing and the rotational direction position in the film forming process of the tenth embodiment. FIG. 18A is a graph showing the film thickness distribution in the wafer surface for the example and the comparative example, and FIG. 18B is a graph showing the film thickness distribution in the wafer surface for the example and the comparative example. It is a graph which shows the film thickness ratio around a boat pillar part.

<First Embodiment of the Present Invention>
Hereinafter, a preferred first embodiment of the present invention will be described with reference to FIGS. The substrate processing apparatus 10 is configured as an example of an apparatus used in a substrate processing process, which is a process of manufacturing a semiconductor device (device).

(1) Configuration of Substrate Processing Apparatus The configuration of the substrate processing apparatus will be described with reference to FIGS. As shown in FIG. 1, the processing furnace 202 is provided with a heater 207 as a heating means (heating mechanism, heating system). The heater 207 is configured in a cylindrical shape whose upper side is closed.

  Inside the heater 207, a reaction tube 203 constituting a reaction vessel (processing vessel) concentrically with the heater 207 is disposed. The reaction tube 203 is made of a heat-resistant material or the like (for example, quartz (SiO 2) or silicon carbide (SiC)), and is formed in a cylindrical shape with the upper end closed and the lower end opened.

  A manifold 209 made of a metal material such as stainless steel is attached to the lower end of the reaction tube 203. The manifold 209 is formed in a cylindrical shape, and its lower end opening is airtightly closed by a seal cap 219 serving as a lid. O-rings 220 are provided between the reaction tube 203 and the manifold 209 and between the manifold 209 and the seal cap 219, respectively. A processing container is mainly constituted by the reaction tube 203, the manifold 209, and the seal cap 219, and a processing chamber 201 is formed inside the processing container. The wafers 200 as the substrates are supported by the boat 217 accommodated in the processing chamber 201 in a horizontal posture and aligned in multiple stages in the vertical direction, whereby the wafers 200 can be accommodated in the processing chamber 201.

  A rotation mechanism 267 that rotates the boat 217 is provided on the side of the seal cap 219 opposite to the processing chamber 201. A rotation shaft 255 of the rotation mechanism 267 passes through the seal cap 219 and is connected to the boat 217. The rotation mechanism 267 is configured to rotate the wafer 200 by rotating the boat 217. The boat elevator 115 is configured so that the boat 217 can be carried in and out of the processing chamber 201 by moving the seal cap 219 up and down. That is, the boat elevator 115 is configured as a transfer device (transfer mechanism) that transfers the boat 217, that is, the wafers 200 into and out of the processing chamber 201.

  The boat 217 as the substrate support is configured to support a plurality of, for example, 25 to 200 wafers 200 in a horizontal posture and in a multi-stage by aligning them vertically in a state where their centers are aligned. Are arranged so as to be spaced apart. The boat 217 is made of a heat resistant material or the like (for example, quartz or SiC). Under the boat 217, heat insulating plates 218 made of a heat-resistant material or the like (for example, quartz or SiC) are supported in multiple stages in a horizontal posture. With this configuration, heat from the heater 207 is not easily transmitted to the seal cap 219 side. However, this embodiment is not limited to the above-mentioned form. For example, instead of providing the heat insulating plate 218 in the lower portion of the boat 217, a heat insulating cylinder configured as a cylindrical member made of a heat resistant material such as quartz or SiC may be provided. The heater 207 can heat the wafer 200 accommodated in the processing chamber 201 to a predetermined temperature.

  In the processing chamber 201, nozzles 410 and 420 are provided so as to penetrate the side wall of the manifold 209. Gas supply pipes 310 and 320 as gas supply lines are connected to the nozzles 410 and 420, respectively. As described above, the reaction tube 203 is provided with the two nozzles 410 and 420 and the two gas supply pipes 310 and 320, and a plurality of types, two types of gas (processing) in the processing chamber 201 are provided. Gas) can be supplied through dedicated lines.

  The gas supply pipes 310 and 320 are provided with mass flow controllers (MFC) 312 and 322 as flow rate controllers (flow rate control units) and valves 314 and 324 as opening / closing valves in order from the upstream side. Nozzles 410 and 420 are connected to the distal ends of the gas supply pipes 310 and 320, respectively. The nozzles 410 and 420 are configured as L-shaped long nozzles, and the horizontal portion thereof is provided so as to penetrate the side wall of the manifold 209. The vertical portions of the nozzles 410 and 420 are in an annular space formed between the inner wall of the reaction tube 203 and the wafer 200, and upward (upward in the stacking direction of the wafer 200) along the inner wall of the reaction tube 203. It is provided to rise (that is, to rise from one end side to the other end side of the wafer arrangement region). That is, the nozzles 410 and 420 are provided on the side of the wafer arrangement area where the wafers 200 are arranged, and in the area horizontally surrounding the wafer arrangement area, along the wafer arrangement area (in the stacking direction of the wafers 200). Extended).

  Gas supply holes 410a and 420a that supply (spout) gas are provided on the side surfaces of the nozzles 410 and 420, respectively. The gas supply holes 410 a and 420 a are opened to face the center of the reaction tube 203. A plurality of gas supply holes 410a and 420a are provided from the lower part to the upper part of the reaction tube 203, have the same opening area, and are provided at the same opening pitch.

  As described above, the gas supply method according to the present embodiment is an annular vertically long space defined by the inner wall of the reaction tube 203 and the ends of the stacked wafers 200, that is, a cylindrical shape. Gas is conveyed through nozzles 410 and 420 disposed in the space, and gas is first ejected into the reaction tube 203 from the gas supply holes 410a and 420a opened in the nozzles 410 and 420, respectively, in the vicinity of the wafer 200. Thus, the main flow of gas in the reaction tube 203 is set to a direction parallel to the surface (substrate surface) of the wafer 200, that is, a horizontal direction. With such a configuration, there is an effect that the gas can be supplied uniformly to each wafer 200 and the thickness of the thin film formed on each wafer 200 can be made uniform. A gas flowing on the surface of each wafer 200, that is, a gas remaining after the reaction (residual gas) flows toward an exhaust port, that is, an exhaust pipe 231 to be described later. The direction is appropriately specified depending on the position of the exhaust port, and is not limited to the vertical direction.

  Further, carrier gas supply pipes 510 and 520 for supplying a carrier gas are connected to the gas supply pipes 310 and 320, respectively. Carrier gas supply pipes 510 and 520 are provided with MFCs 512 and 522 and valves 514 and 524.

  As an example of the above configuration, a raw material gas containing a metal element (metal-containing gas) is supplied from the gas supply pipe 310 into the processing chamber 201 through the MFC 312, the valve 314, and the nozzle 410 as a processing gas. As the raw material, for example, titanium tetrachloride (TiCl 4) is used as a halogen-based raw material (also referred to as a halide or a halogen-based titanium raw material) containing titanium (Ti) as a metal element. Ti is classified as a transition metal element. The halogen-based material is a material containing a halogen group. The halogen group includes chloro group, fluoro group, bromo group, iodo group and the like. That is, the halogen group includes halogen elements such as chlorine (Cl), fluorine (F), bromine (Br), iodine (I) and the like.

  From the gas supply pipe 320, N-containing gas as a reaction gas containing nitrogen (N) is supplied into the processing chamber 201 through the MFC 322, the valve 324, and the nozzle 420 as the processing gas. As the N-containing gas, a metal element-free N-containing gas, for example, ammonia (NH 3) gas can be used. NH3 acts as a nitriding / reducing agent (nitriding / reducing gas).

  From the carrier gas supply pipes 510 and 520, as an inert gas, for example, nitrogen (N 2) gas is supplied into the processing chamber 201 through the MFCs 512 and 522, the valves 514 and 524, and the nozzles 410 and 420, respectively. Hereinafter, an example in which N2 gas is used as the inert gas will be described. However, as the inert gas, a rare gas such as Ar gas, He gas, Ne gas, or Xe gas may be used in addition to the N2 gas. Good.

  Here, in the present specification, the raw material gas is a gaseous raw material, for example, a gas obtained by vaporizing or sublimating a raw material in a liquid state or a solid state under normal temperature and normal pressure, or a gaseous state under normal temperature and normal pressure. It is the raw material etc. which are. In the present specification, when the term “raw material” is used, it means “liquid raw material in a liquid state”, “solid raw material in a solid state”, “source gas in a gaseous state”, or a combination thereof. There is. When using a liquid raw material that is in a liquid state at normal temperature and normal pressure, such as TiCl4, or a solid raw material that is in a solid state at normal temperature and normal pressure, such as AlCl3, the liquid raw material or solid raw material is a vaporizer, bubbler, or sublimator. The gas is vaporized or sublimated by a system such as the above and supplied as a source gas (TiCl4 gas, AlCl3 gas, etc.).

  When the processing gas as described above is supplied from the gas supply pipes 310 and 320, the processing gas supply system is mainly configured by the gas supply pipes 310 and 320, the MFCs 312 and 322, and the valves 314 and 324. The nozzles 410 and 420 may be included in the processing gas supply system. The processing gas supply system can be simply referred to as a gas supply system.

  When flowing the metal-containing gas as the source gas as described above from the gas supply pipe 310, a metal-containing gas supply system as a source gas supply system is mainly configured by the gas supply pipe 310, the MFC 312, and the valve 314. The nozzle 410 may be included in the source gas supply system. The source gas supply system can also be referred to as a source supply system.

  When a halogen-based source gas is supplied as a source gas from the gas supply pipe 310, a halogen-based source gas supply system is mainly configured by the gas supply pipe 310, the MFC 312 and the valve 314. The nozzle 410 may be included in the halogen-based source gas supply system. The halogen-based source gas supply system can also be referred to as a halogen-based source supply system. When the titanium-containing gas is allowed to flow from the gas supply pipe 310, the halogen-based source gas supply system can also be referred to as a titanium-containing gas supply system. When flowing TiCl 4 gas from the gas supply pipe 310, the titanium-containing gas supply system may be referred to as a TiCl 4 gas supply system. The TiCl4 gas supply system can also be referred to as a TiCl4 supply system.

  When an N-containing gas is allowed to flow as a reaction gas from the gas supply pipe 320, an N-containing gas supply system is mainly configured by the gas supply pipe 320, the MFC 322, and the valve 324. The nozzle 420 may be included in the N-containing gas supply system. When the NH 3 gas is allowed to flow from the gas supply pipe 320, the reaction gas supply system can also be referred to as an NH 3 gas supply system. The reaction gas supply system can also be referred to as an NH3 supply system.

  Further, a carrier gas supply system is mainly configured by the carrier gas supply pipes 510 and 520, the MFCs 512 and 522, and the valves 514 and 524. When an inert gas is allowed to flow as the carrier gas, the carrier gas supply system can also be referred to as an inert gas supply system. Since this inert gas also acts as a purge gas, the inert gas supply system can also be referred to as a purge gas supply system.

  The manifold 209 is provided with an exhaust pipe 231 that exhausts the atmosphere in the processing chamber 201. Similarly to the nozzles 410 and 420, the exhaust pipe 231 is provided so as to penetrate the side wall of the manifold 209. As shown in FIG. 2, the exhaust pipe 231 is provided at a position facing the nozzles 410 and 420 across the wafer 200 in plan view. With this configuration, the gas supplied from the gas supply holes 410a and 420a to the vicinity of the wafer 200 in the processing chamber 201 flows in the horizontal direction, that is, in the direction parallel to the surface of the wafer 200, and then downwards. The air is exhausted from the exhaust pipe 231. As described above, the main flow of gas in the processing chamber 201 is a flow in the horizontal direction.

  The exhaust pipe 231 includes, in order from the upstream side, a pressure sensor 245 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 201, an APC (Auto Pressure Controller) valve 243, and a vacuum pump as a vacuum exhaust device. 246 is connected. The APC valve 243 is an exhaust valve and functions as a pressure adjustment unit. Further, the exhaust pipe 231 has a trap device that captures reaction by-products and unreacted source gas in the exhaust gas, and a detoxification device that removes corrosive components and toxic components contained in the exhaust gas. May be connected. An exhaust system, that is, an exhaust line, is mainly configured by the exhaust pipe 231, the APC valve 243, and the pressure sensor 245. Note that the vacuum pump 246 may be included in the exhaust system. Furthermore, a trap device or a detoxifying device may be included in the exhaust system.

  Note that the APC valve 243 can open and close the vacuum pump 246 in a state where the vacuum pump 246 is operated to perform vacuum exhaust and stop the vacuum exhaust in the processing chamber 201, and further, a state where the vacuum pump 246 is operated. Thus, the pressure in the processing chamber 201 can be adjusted by adjusting the valve opening. The APC valve 243 constitutes a part of the exhaust flow path of the exhaust system, and not only functions as a pressure adjusting unit, but also closes or further seals the exhaust flow path of the exhaust system. It also functions as a possible exhaust flow path opening / closing part, that is, an exhaust valve.

  A temperature sensor 263 as a temperature detector is installed in the reaction tube 203, and the temperature in the processing chamber 201 is adjusted by adjusting the energization amount to the heater 207 based on the temperature information detected by the temperature sensor 263. It is configured to have a desired temperature distribution. The temperature sensor 263 is configured in an L shape like the nozzles 410 and 420, and is provided along the inner wall of the reaction tube 203.

  As shown in FIG. 3, the controller 121, which is a control unit (control means), is configured as a computer including a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. ing. The RAM 121b, the storage device 121c, and the I / O port 121d are configured to exchange data with the CPU 121a via an internal bus. For example, an input / output device 122 configured as a touch panel or the like is connected to the controller 121.

  The storage device 121c is configured by, for example, a flash memory, an HDD (Hard Disk Drive), or the like. In the storage device 121c, a control program that controls the operation of the substrate processing apparatus, a process recipe that describes the procedure and conditions of the substrate processing described later, and the like are stored in a readable manner. The process recipe is a combination of instructions so that the controller 121 can execute each procedure in the substrate processing process described later and obtain a predetermined result, and functions as a program. Hereinafter, the process recipe, the control program, and the like are collectively referred to as simply a program. When the term “program” is used in this specification, it may include only a process recipe alone, only a control program alone, or both. The RAM 121b is configured as a memory area (work area) in which programs, data, and the like read by the CPU 121a are temporarily stored.

  The I / O port 121d includes the above-described MFC 312, 322, 512, 522, valve 314, 324, 514, 524, APC valve 243, pressure sensor 245, vacuum pump 246, heater 207, temperature sensor 263, rotating mechanism 267, boat It is connected to the elevator 115 and the like.

  The CPU 121a is configured to read out and execute a control program from the storage device 121c, and to read out a process recipe from the storage device 121c in response to an operation command input from the input / output device 122 or the like. In accordance with the read process recipe, the CPU 121a adjusts the flow rates of various gases by the MFCs 312, 322, 512, and 522, opens and closes the valves 314, 324, 514, and 524, opens and closes the APC valve 243, and the pressure sensor 245 by the APC valve 243. Pressure adjustment operation based on the temperature sensor, the temperature adjustment operation of the heater 207 based on the temperature sensor 263, the start and stop of the vacuum pump 246, the rotation and rotation speed adjustment operation of the boat 217 by the rotation mechanism 267, the lifting and lowering operation of the boat 217 by the boat elevator 115, etc. Is configured to control.

  The controller 121 is not limited to being configured as a dedicated computer, and may be configured as a general-purpose computer. For example, an external storage device (such as a magnetic tape, a flexible disk or a hard disk, an optical disk such as a CD or a DVD, a magneto-optical disk such as an MO, a semiconductor memory such as a USB memory or a memory card) that stores the above program 123 And installing the program in a general-purpose computer using the external storage device 123, the controller 121 according to the present embodiment can be configured. However, the means for supplying the program to the computer is not limited to supplying the program via the external storage device 123. For example, the program may be supplied without using the external storage device 123 by using communication means such as the Internet or a dedicated line. The storage device 121c and the external storage device 123 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as a recording medium. When the term “recording medium” is used in this specification, it may include only the storage device 121c alone, may include only the external storage device 123 alone, or may include both.

  Next, with reference to FIG. 4A to FIG. 4C, the manner of supporting the wafer 200 by the boat 217 and the manner of supplying the processing gas from the nozzles 410 and 420 to the wafer 200 will be illustrated in more detail. .

  The boat 217 has a plurality of (preferably three or more) boat pillars BR provided along the circumferential direction of the wafers 200 supported by the boat 217 and extending in the vertical direction. Hereinafter, the boat column BR may be simply referred to as a column BR. In this example, a boat 217 having three pillars BR1, BR2, and BR3 is illustrated. A plurality of support grooves 217a are provided in the vertical direction on the inner peripheral side of each pillar BR, and the wafer 200 can be locked in each support groove 217a. In this way, the wafer 200 is supported on the boat 217 by the pillar BR.

  The interval between the adjacent pillars BR or the width of the opening formed between the adjacent pillars BR can be represented by a fan-shaped central angle formed by these pillars and the center of the wafer 200. By setting the interval between the columns forming the widest opening to 180 ° or more, the wafer 200 can be attached to and detached from the boat 217 through the widest opening. In this example, the pillar BR1 and the pillar BR2 are separated by 180 °, and the widest opening is formed between the pillar BR1 and the pillar BR2. The pillars BR2 and BR3 and the pillars BR3 and BR1 are 90 degrees apart from each other.

  A processing gas is supplied to the wafer 200 from the gas supply holes 410a and 420a arranged outside in the direction parallel to the substrate surface, that is, outside in the horizontal direction of the wafer 200. At this time, the processing gas is supplied while rotating (spinning) the boat 217 supporting the wafers 200 by the rotating mechanism 267 shown in FIG. Here, the positions of the gas supply holes 410a and 420a in the processing chamber 201 are fixed. For this reason, the positions of the gas supply holes 410 a and 420 a with respect to the wafer 200, that is, the rotational positions of the gas supply holes 410 a and 420 a as viewed from the center of the wafer 200 are changed by the rotation of the wafer 200.

  On the other hand, since the boat 217 rotates with the wafer 200, the positions of the pillars BR1 to BR3 with respect to the wafer 200, that is, the rotational direction positions of the pillars BR1 to BR3 viewed from the center of the wafer 200 are not changed by the rotation.

  Hereinafter, the rotational position of the gas supply holes 410a and 420a as viewed from the center of the wafer 200 may be simply referred to as “the rotational position of the gas supply holes”. Here, in order to avoid complexity of explanation, the description will be continued by simplifying that the rotational direction position of the gas supply hole 410a is equal to the rotational direction position of the gas supply hole 420a. In addition, the rotational position of the pillar BR viewed from the center of the wafer 200 may be simply referred to as “the rotational position of the pillar BR”.

(2) Substrate processing process (film formation process)
As an example of a process for manufacturing a semiconductor device (device), an example of a process for forming a metal film that forms a gate electrode on a substrate will be described with reference to FIGS. The step of forming the metal film is performed using the processing furnace 202 of the substrate processing apparatus 10 described above. In the following description, the operation of each part constituting the substrate processing apparatus 10 is controlled by the controller 121.

  In the substrate processing process (semiconductor device manufacturing process) according to the present embodiment, a process of rotating a boat 217 as a substrate support, which is accommodated in the processing chamber 201 and supported by the pillar BR, and a boat 217 is provided. In the rotating state, a process gas containing TiCl 4 gas as the first gas is supplied to the wafer 200 from the gas supply hole 410a located on the outer side in the horizontal direction of the wafer 200. In the process gas supply step, TiCl 4 gas is supplied to the wafer 200 at a timing selected so that the pillar BR does not exist between the gas supply hole 410 a and the wafer 200.

  In this specification, when the term “wafer” is used, it means “wafer itself” or “a laminate (aggregate) of a wafer and a predetermined layer or film formed on the surface thereof”. "(That is, a wafer including a predetermined layer or film formed on the surface). In addition, when the term “wafer surface” is used in this specification, it means “the surface of the wafer itself (exposed surface)” or “the surface of a predetermined layer or film formed on the wafer”. That is, it may mean “the outermost surface of the wafer as a laminated body”.

  Therefore, in the present specification, the phrase “supplying a predetermined gas to the wafer” means “supplying a predetermined gas directly to the surface (exposed surface) of the wafer itself”. , It may mean that “a predetermined gas is supplied to a layer, a film, or the like formed on the wafer, that is, to the outermost surface of the wafer as a laminated body”. Further, in this specification, when “describe a predetermined layer (or film) on the wafer” is described, “determine a predetermined layer (or film) directly on the surface (exposed surface) of the wafer itself”. This means that a predetermined layer (or film) is formed on a layer or film formed on the wafer, that is, on the outermost surface of the wafer as a laminate. There is a case.

  Note that the term “substrate” in this specification is the same as the term “wafer”. In that case, in the above description, “wafer” is replaced with “substrate”. Good.

  Further, in this specification, the term “metal film” means a film made of a conductive substance containing a metal atom, which includes a conductive metal nitride film (metal nitride film), a conductive metal. Oxide film (metal oxide film), conductive metal oxynitride film (metal oxynitride film), conductive metal composite film, conductive metal alloy film, conductive metal silicide film (metal silicide film), conductive A conductive metal carbide film (metal carbide film), a conductive metal carbonitride film (metal carbonitride film), and the like. The titanium film (Ti film) is a conductive metal film, and the titanium nitride film (TiN film) is a conductive metal nitride film.

  Further, in this specification, “time division” means that the time division (separation) is performed. For example, in this specification, performing each process in a time-sharing manner means that each process is performed asynchronously (not performed simultaneously), that is, performed without being synchronized (not performed simultaneously). Yes. In other words, each process is performed intermittently (pulse-like) and alternately. That is, it means that the processing gases supplied in each process are supplied so as not to mix with each other. When each process is performed a plurality of times, the process gases supplied in each process are alternately supplied so as not to mix with each other.

(Wafer charge and boat load)
When a plurality of wafers 200 are loaded into the boat 217 (wafer charge), as shown in FIG. 1, the boat 217 supporting the plurality of wafers 200 is lifted by the boat elevator 115 and processed in the processing chamber 201. It is carried in (boat loading). In this state, the seal cap 219 closes the lower end opening of the reaction tube 203 via the O-ring 220.

(Pressure adjustment and temperature adjustment)
The processing chamber 201 is evacuated by a vacuum pump 246 so that a desired pressure (degree of vacuum) is obtained. At this time, the pressure in the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 243 is feedback-controlled based on the measured pressure information (pressure adjustment). The vacuum pump 246 keeps operating at least until the processing on the wafer 200 is completed. Further, the processing chamber 201 is heated by the heater 207 so as to have a desired temperature. At this time, the energization amount to the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor 263 so that the processing chamber 201 has a desired temperature distribution (temperature adjustment). The heating of the processing chamber 201 by the heater 207 is continuously performed at least until the processing on the wafer 200 is completed.

(Boat rotation)
Subsequently, the rotation mechanism 267 starts the rotation of the boat 217 and the wafer 200. The rotation of the boat 217 and the wafer 200 by the rotation mechanism 267 is continuously performed at least until the processing on the wafer 200 is completed. Here, as an example, the description will be continued assuming that the rotation speed is, for example, 2.5 rpm, that is, the rotation cycle is, for example, 24 seconds.

(TiN film formation step)
Subsequently, a step of forming a TiN film, which is a metal nitride film, for example, is performed as the metal film. The TiN film forming step includes a TiCl 4 gas (source gas) supply step, a residual gas removal step, an NH 3 gas (reaction gas) supply step, and a residual gas removal step, which will be described below.

  FIG. 5A shows an example of a processing gas supply sequence that defines a procedure within one cycle of supplying a processing gas for forming a TiN film. As in this sequence, the start timing and stop timing of the supply of TiCl 4 gas as the first gas within the cycle are defined. In addition, as in this sequence, TiCl4 gas as the first gas and NH3 gas as the second gas (of a different type from the first gas) are supplied in a time-sharing (alternate) manner. Thus, the start timing and stop timing of the supply of NH 3 gas as the second gas are defined.

  Here, as an example, the following processing gas supply sequence will be given and the description will be continued. In the processing gas supply sequence, for example, the total length (cycle time) is 30 seconds. 3 seconds from 0 seconds (sequence start timing) to 3 seconds is a TiCl4 gas supply period, that is, a period during which the TiCl4 gas supply step is performed. 6 seconds from 3 seconds to 9 seconds is a purge period, that is, a period during which the residual gas removal step is performed. The 15 seconds from 9 seconds to 24 seconds is an NH3 gas supply period, that is, an NH3 gas supply step is performed. 6 seconds from 24 seconds to 30 seconds is a purge period, that is, a period during which the residual gas removal step is performed.

  As shown in FIG. 5B, the process gas is supplied by repeating such a sequence. The process gas is supplied while the boat 217 and the wafer 200 are rotating. The rotation period of the boat 217 and the wafer 200 is selected as, for example, 24 seconds, and the length (cycle time) of the processing gas supply sequence for one cycle is selected as, for example, 30 seconds. Since the rotation period is not equal to the length of the process gas supply sequence, for example, the position of the gas supply hole in the rotation direction at the start timing of each sequence shifts every time the process gas supply sequence is repeated.

  The rotation direction position of the gas supply hole (gas supply hole 410a) at the start timing of the first cycle (sequence executed for the first time) is set to 0 ° for the first rotation, and is used as a reference for the rotation direction position. The rotational direction position of the gas supply hole at the start timing of the second cycle (sequence executed at the second time), the third cycle (sequence executed at the third time), and the fourth cycle (sequence executed at the fourth time) is , 90 ° for the second rotation, 180 ° for the third rotation, and 270 ° for the fourth rotation. The rotational direction position of the gas supply hole at the start timing of the fifth cycle (sequence executed for the fifth time) is 360 ° for the fifth rotation, that is, 0 ° for the sixth rotation.

  Therefore, in this example, when the processing gas supply sequence is completed for four times (four cycles), the rotation of the wafer 200 is completed for five times, and the rotational direction position of the gas supply holes at the start timing of the fifth cycle is It becomes equal to the rotational direction position of the gas supply hole at the start timing of the first cycle. That is, in this example, each time the processing gas supply sequence is repeated a certain number of times (specifically, four times), the processing gas supply sequence start timing is synchronized with the rotation timing of the boat 217 (wafer 200). The relationship between the length of the gas supply sequence and the rotation period (of the wafer 200) of the boat 217 is selected.

  From the fifth cycle onward, the same timing relationship as in the first to fourth cycles is repeated. A period from the start timing of the process gas supply sequence and the rotation timing of the wafer 200 being synchronized at a certain timing to the next synchronization (in this example, from the start timing of the first cycle to the start timing of the fifth cycle) (Period) is called a synchronization unit period.

  Such a relationship can be expressed as follows using mathematical formulas. The length (cycle time) of the process gas supply sequence for one cycle is Tspl, and the number of cycles is a. Further, the rotation period of the boat 217 (the wafer 200) is set to Trot, and the number of rotations is set to b. The relationship that the rotation of the wafer is completed b times when the processing gas supply sequence is completed a times is expressed as aTspl = bTrot. Here, for example, if Tspl = 30 seconds and Trot = 24 seconds, the above expression becomes 30a = 24b. The minimum values of a and b that satisfy such a relationship are a = 4 and b = 5. That is, when the processing gas supply sequence is completed four times, the rotation of the wafer 200 is completed five times.

  The rotational positions of the gas supply holes 410a in the TiCl4 gas supply period from the first cycle to the fourth cycle are 0 ° from the first rotation to 45 ° from the first rotation, and 90 ° to the second rotation from the second rotation, respectively. It moves within the range of 135 °, 180 ° of the third rotation to 225 ° of the third rotation, and 270 ° to 315 ° of the fourth rotation. That is, the supply range of the TiCl 4 gas in the first to fourth cycles is in the range of 0 ° to 45 °, 90 ° to 135 °, 180 ° to 225 °, and 270 ° to 315 °, respectively. The width of the supply range of TiCl 4 gas for one cycle is 45 °. FIG. 6A collectively shows the supply range of the first to fourth cycles of the TiCl 4 gas on the wafer 200.

  In this example, the rotation direction positions of the columns BR1 to BR3 of the boat 217 are set to 67.5 °, 247.5 °, and 337.5 °, respectively. None of the columns BR1 to BR3 is disposed in the supply range of the TiCl4 gas in the first to fourth cycles. That is, during the TiCl4 gas supply period, the columns BR1 to BR3 do not exist between the gas supply hole 410a for supplying the TiCl4 gas and the wafer 200 (the gas supply hole 410a and the columns BR1 to BR3 do not face each other). . That is, the columns BR1 to BR3 do not exist at positions where the angle formed by the gas flow of the processing gas ejected from the gas supply hole 410a and the outer edge of the wafer 200 is a right angle.

  As described above, in the process gas supply process according to the present embodiment, TiCl 4 gas is supplied to the wafer 200 at a timing selected so that the pillars BR1 to BR3 do not exist between the gas supply hole 410a and the wafer 200. Supply. More specifically, preferably, in any of the processing gas supply sequences performed during the synchronization unit period, the gas supply holes 410a and the wafers 200 are separated from each other during the TiCl4 gas supply period defined in the processing gas supply sequence. TiCl4 gas is supplied to the wafer 200 at a timing such that the pillars BR1 to BR3 do not exist between them. It can also be said that the supply of TiCl 4 gas is stopped at the timing when the pillars BR 1 to BR 3 exist between the gas supply hole 410 a and the wafer 200.

  The rotation direction position of the gas supply hole 420a in the NH3 gas supply period of the first cycle to the fourth cycle is 135 ° to 360 ° for the first rotation (0 ° for the second rotation), and the second rotation, respectively. 225 ° to 90 ° of the third rotation, 315 ° to the third rotation of 180 °, and 180 ° of the fourth rotation, and 45 ° to the fifth rotation of 270 °. That is, the NH3 gas supply range in the first to fourth cycles is in the range of 135 ° to 360 ° (0 °), 225 ° to 90 °, 315 ° to 180 °, and 45 ° to 270 °, respectively. . The width of the supply range of NH 3 gas for one cycle is 225 °. FIG. 6B collectively shows the supply range of the NH3 gas on the wafer 200 in the first to fourth cycles.

  The width of the supply range for one cycle of NH 3 gas is 225 °, which is larger than the interval 180 ° between the columns BR1 and BR2 which are the most adjacent to each other. For this reason, in any of the processing gas supply sequences performed during the synchronization unit period, the columns BR1 to BR1 are interposed between the gas supply holes 420a and the wafer 200 during the NH3 gas supply period defined in the processing gas supply sequence. The timing at which BR3 (any one) exists is included. In the first embodiment, for NH 3 gas, the columns BR 1 to BR 3 exist between the gas supply hole 420 a and the wafer 200 as well as the timing at which the columns BR 1 to BR 3 do not exist between the gas supply hole 420 a and the wafer 200. This is an example in which the processing gas is supplied even at the timing.

  Hereinafter, each of the TiCl 4 gas supply step, the residual gas removal step, the NH 3 gas supply step, and the residual gas removal step will be described in more detail.

(TiCl4 gas supply step)
The valve 314 is opened and a TiCl 4 gas that is a raw material gas is caused to flow into the gas supply pipe 310. The flow rate of the TiCl 4 gas that has flowed through the gas supply pipe 310 is adjusted by the MFC 312. The flow-adjusted TiCl 4 gas is supplied from the gas supply hole 410 a of the nozzle 410 into the processing chamber 201 and is exhausted from the exhaust pipe 231. At this time, TiCl 4 gas is supplied to the wafer 200. That is, the surface of the wafer 200 is exposed to TiCl 4 gas. At the same time, the valve 514 is opened, and an inert gas such as N 2 gas is allowed to flow into the carrier gas supply pipe 510. The flow rate of the N 2 gas that has flowed through the carrier gas supply pipe 510 is adjusted by the MFC 512. The N 2 gas whose flow rate is adjusted is supplied into the processing chamber 201 together with the TiCl 4 gas, and is exhausted from the exhaust pipe 231. At this time, in order to prevent the intrusion of TiCl 4 gas into the nozzle 420, the valve 524 is opened and N 2 gas is allowed to flow into the carrier gas supply pipe 520. The N 2 gas is supplied into the processing chamber 201 through the gas supply pipe 320 and the nozzle 420 and is exhausted from the exhaust pipe 231.

  At this time, the APC valve 243 is appropriately adjusted, and the pressure in the processing chamber 201 is, for example, a pressure within a range of 1 to 70000 Pa, preferably 1 to 1330 Pa, for example, 20 to 50 Pa. The supply flow rate of the TiCl4 gas controlled by the MFC 312 is, for example, a flow rate in the range of 0.05 to 2 slm, preferably 0.15 to 1 slm, for example, 0.45 slm. The supply flow rate of the N2 gas controlled by the MFCs 512 and 522 is, for example, a flow rate in the range of 1 to 20 slm, preferably 5 to 15 slm, for example 7 slm. The time for supplying the TiCl4 gas to the wafer 200, that is, the gas supply time (irradiation time) is, for example, in the range of 0.1 to 60 seconds, preferably 1 to 30 seconds, for example, 3 seconds. And At this time, the temperature of the heater 207 is set to such a temperature that the temperature of the wafer 200 is in the range of 250 to 650 ° C., for example, preferably 300 to 550 ° C., for example, 380 ° C. The gases flowing into the processing chamber 201 are only TiCl4 gas and N2 gas. When the TiCl4 gas is supplied, the wafer 200 (surface underlayer film) has a thickness of, for example, less than one atomic layer to several atomic layers. A Ti-containing layer is formed.

  The Ti-containing layer rarely becomes a Ti layer containing only Ti single atoms, and actually contains other atoms derived from the respective raw materials in many cases. For this reason, the Ti-containing layer formed in the supply step of TiCl 4 gas, which is a halogen-based source gas, often contains Cl, which is a halogen-based element. That is, it can be said that the Ti-containing layer is a TiCl4 layer that is an adsorption layer of TiCl4. The TiCl4 layer includes a continuous adsorption layer of TiCl4 molecules as well as a discontinuous adsorption layer. That is, the TiCl4 layer includes an adsorption layer having a thickness of less than one molecular layer composed of TiCl4 molecules or less than one molecular layer. TiCl4 molecules constituting the TiCl4 layer include those in which the bond between Ti and Cl is partially broken. That is, the TiCl4 layer includes a physical adsorption layer and a chemical adsorption layer of TiCl4. However, under the above-described processing conditions, chemical adsorption is superior to physical adsorption of TiCl 4 on the wafer 200.

  Here, a layer having a thickness of less than one atomic layer means an atomic layer formed discontinuously, and a layer having a thickness of one atomic layer means an atomic layer formed continuously. Means. A layer having a thickness of less than one molecular layer means a molecular layer formed discontinuously, and a layer having a thickness of one molecular layer means a molecular layer formed continuously. ing. This also applies to the examples described later.

(Residual gas removal step)
After the Ti-containing film is formed, the valve 314 is closed and the supply of TiCl4 gas is stopped. At this time, the APC valve 243 of the exhaust pipe 231 is kept open, the inside of the processing chamber 201 is evacuated by the vacuum pump 246, and the TiCl4 gas remaining in the processing chamber 201 and contributing to the formation of the Ti-containing film is left. Are removed from the processing chamber 201. That is, the unreacted or remaining TiCl 4 gas that contributes to the formation of the Ti-containing layer remaining in the space where the wafer 200 on which the Ti-containing layer is formed exists is removed. At this time, the valves 514 and 524 remain open, and the supply of N 2 gas into the processing chamber 201 is maintained. The N 2 gas acts as a purge gas, and can enhance the effect of removing the unreacted residual TiCl 4 gas remaining in the processing chamber 201 or forming a Ti-containing film from the processing chamber 201.

  At this time, the gas remaining in the processing chamber 201 may not be completely removed, and the inside of the processing chamber 201 may not be completely purged. If the amount of gas remaining in the processing chamber 201 is very small, no adverse effect will occur in the subsequent steps. The flow rate of the N 2 gas supplied into the processing chamber 201 does not need to be a large flow rate. For example, by supplying an amount similar to the volume of the reaction tube 203 (processing chamber 201), an adverse effect occurs in the subsequent steps. There can be no purging. Thus, by not completely purging the inside of the processing chamber 201, the purge time can be shortened and the throughput can be improved. In addition, the consumption of N2 gas can be suppressed to a necessary minimum.

(NH3 gas supply step)
After the residual gas in the processing chamber 201 is removed, the valve 324 is opened, and NH 3 gas, which is an N-containing gas, is caused to flow as a reaction gas into the gas supply pipe 320. The flow rate of the NH 3 gas flowing through the gas supply pipe 320 is adjusted by the MFC 322. The NH 3 gas whose flow rate has been adjusted is supplied into the processing chamber 201 from the gas supply hole 420 a of the nozzle 420. The NH 3 gas supplied into the processing chamber 201 is activated by heat and then exhausted from the exhaust pipe 231. At this time, NH 3 gas activated by heat is supplied to the wafer 200. That is, the surface of the wafer 200 is exposed to NH3 gas activated by heat. At the same time, the valve 524 is opened, and N 2 gas is caused to flow into the carrier gas supply pipe 520. The flow rate of the N 2 gas flowing through the carrier gas supply pipe 520 is adjusted by the MFC 522. N 2 gas is supplied into the processing chamber 201 together with NH 3 gas, and is exhausted from the exhaust pipe 231. At this time, in order to prevent the intrusion of NH 3 gas into the nozzle 410, the valve 514 is opened and N 2 gas is allowed to flow into the carrier gas supply pipe 510. The N 2 gas is supplied into the processing chamber 201 through the gas supply pipe 310 and the nozzle 410 and is exhausted from the exhaust pipe 231.

  When flowing NH3 gas, the APC valve 243 is appropriately adjusted, and the pressure in the processing chamber 201 is, for example, in the range of 1 to 70000 Pa, preferably 1 to 1330 Pa, for example 50 to 100 Pa. And The NH3 gas supply flow rate controlled by the MFC 322 is, for example, a flow rate in the range of 1 to 20 slm, preferably 1 to 10 slm, for example, 7.5 slm. The supply flow rate of N2 gas controlled by the MFCs 512 and 522 is, for example, a flow rate in the range of 1 to 20 slm, preferably 1 to 10 slm, for example, 7 slm. The time for supplying the NH3 gas activated by heat to the wafer 200, that is, the gas supply time (irradiation time) is, for example, in the range of 0.01 to 300 seconds, and preferably 1 to 60 seconds. For example, 15 seconds. The temperature of the heater 207 at this time is set to the same temperature as in the TiCl 4 gas supply step.

  At this time, the gases flowing into the processing chamber 201 are only NH3 gas and N2 gas. The NH 3 gas undergoes a substitution reaction with at least a part of the Ti-containing layer formed on the wafer 200 in the TiCl 4 gas supply step. In the substitution reaction, Ti contained in the Ti-containing layer and N contained in the NH 3 gas are combined to form a TiN layer containing Ti and N on the wafer 200.

(Residual gas removal step)
After forming the TiN layer, the valve 324 is closed and the supply of NH 3 gas is stopped. At this time, the APC valve 243 of the exhaust pipe 231 is kept open, the inside of the processing chamber 201 is evacuated by the vacuum pump 246, and the NH 3 gas after contributing to the formation of the unreacted or TiN layer remaining in the processing chamber 201 And reaction by-products are removed from the processing chamber 201. At this time, the valves 514 and 524 remain open, and the supply of N 2 gas into the processing chamber 201 is maintained. The N 2 gas acts as a purge gas, and the effect of removing NH 3 gas and reaction by-products remaining in the processing chamber 201 or contributing to the formation of the TiN layer from the processing chamber 201 can be enhanced.

  At this time, similarly to the residual gas removal step after the TiCl 4 gas supply step, the gas remaining in the processing chamber 201 may not be completely removed, and the processing chamber 201 may not be completely purged.

(Performed times)
By performing one or more cycles (predetermined number of times (na times)) in which the TiCl4 gas supply step, the residual gas removal step, the NH3 gas supply step, and the residual gas supply step are sequentially performed in a time-sharing manner, A TiN film having a predetermined thickness (for example, 0.1 to 10 nm) is formed. The above cycle is preferably repeated multiple times.

  When the processing gas supply sequence is repeated a plurality of times (na times) (when the boat 217 is rotated nb times), na is preferably a multiple of 4 (that is, nb is a multiple of 5). Multiple (nb is a multiple of 5). In other words, the processing gas supply sequence repetition number na (and the boat 217 rotation number nb) is such that the cycle (synchronization unit period) in which the processing gas supply sequence and the boat 217 rotation timing are synchronized is exactly an integral number of times. While it is preferred that it be selected, it need not be.

  When the cycle is performed a plurality of times, at least in each step after the second cycle, the portion described as “supplying gas to the wafer 200” is “to the layer formed on the wafer 200, that is, This means that a predetermined gas is supplied to the outermost surface of the wafer 200 as a laminated body, and a portion that “forms a predetermined layer on the wafer 200” is “formed on the wafer 200. It means that a predetermined layer is formed on a certain layer, that is, on the outermost surface of the wafer 200 as a laminate. This also applies to the examples described later.

(Purge and return to atmospheric pressure)
The valves 514 and 524 are opened, N 2 gas is supplied into the processing chamber 201 from the gas supply pipes 510 and 520, and exhausted from the exhaust pipe 231. The N 2 gas acts as a purge gas, whereby the inside of the processing chamber 201 is purged with an inert gas, and gas and by-products remaining in the processing chamber 201 are removed from the processing chamber 201 (purge). Thereafter, the atmosphere in the processing chamber 201 is replaced with an inert gas (inert gas replacement), and the pressure in the processing chamber 201 is returned to normal pressure (return to atmospheric pressure).

(Boat unload and wafer discharge)
Thereafter, the seal cap 219 is lowered by the boat elevator 115 and the lower end of the reaction tube 203 is opened. The processed wafer 200 is unloaded from the lower end of the reaction tube 203 to the outside of the reaction tube 203 while being supported by the boat 217 (boat unloading). Thereafter, the processed wafer 200 is taken out from the boat 217 (wafer discharge).

(3) Effects according to this embodiment According to this embodiment, one or more of the following effects can be obtained.

  In the present embodiment, TiCl 4 gas is supplied to the wafer 200 at a timing selected so that the pillars BR 1 to BR 3 do not exist between the gas supply hole 410 a and the wafer 200. Thereby, in this embodiment, as shown in FIG. 7, the TiCl 4 gas supplied from the gas supply hole 410a flows toward the center of the wafer 200 without colliding with the pillars BR1 to BR3. Further, TiCl4 gas is easily supplied to the wafer portions around the pillars BR1 to BR3. In FIG. 7, the schematic flow of TiCl 4 gas is indicated by an arrow, and the amount of gas supply is schematically indicated by the thickness of the arrow.

  Here, a comparative example will be described. In the comparative embodiment, as shown in FIG. 10A, TiCl 4 gas is supplied to the wafer 200 at the timing when the pillars BR1 to BR3 exist between the gas supply hole 410a and the wafer 200. More specifically, in this comparative embodiment, the start timing of the processing gas supply sequence shown in FIG. 5A is shifted from the above embodiment, and the gas supply hole 410a, the wafer 200, and the wafer 200 are supplied during the TiCl4 gas supply period. Columns BR1 to BR3 are present between them.

  In the comparative embodiment, as shown in FIG. 10B, the TiCl 4 gas supplied from the gas supply hole 410 a collides with the pillar BR such as the pillar BR 3, diffuses in the lateral direction, and is supplied to the center of the wafer 200. The amount of TiCl4 gas to be reduced is reduced. Since at least the wafer portion around the colliding column BR is shaded by the column BR, the supply amount of the TiCl 4 gas is significantly reduced as compared with the case where no collision occurs. Thus, the collision with the pillar BR hinders the good supply of TiCl 4 gas to the wafer 200, and the film formation rate in the portion where the supply of TiCl 4 gas is hindered is reduced. The internal uniformity deteriorates.

  On the other hand, in this embodiment, since the flow of TiCl 4 gas is suppressed from being inhibited by the pillars BR1 to BR3, the partial reduction of the film formation rate as described above is suppressed as compared with the comparative embodiment, and The in-plane uniformity of the film can be improved.

  In the first embodiment, when the NH3 gas is supplied, the gas flow collides with the columns BR1 to BR3. However, by supplying at least one kind of gas, for example, TiCl4 gas, among the plural kinds of gases contained in the process gas while suppressing the collision of the gas flow to the pillars BR1 to BR3 as described above, Compared with the case where the gas of this type is supplied without suppressing the collision of the gas flow to the pillars BR1 to BR3, the partial reduction of the film formation rate as described above is suppressed, and the film formation is uniform in the surface. Can be improved.

<Second Embodiment of the Present Invention>
In the first embodiment, for the TiCl4 gas, the processing gas is supplied at a timing selected so that the pillars BR1 to BR3 do not exist between the gas supply hole 410a and the wafer 200, but for the NH3 gas, the gas The example in which the processing gas is supplied at the timing when the columns BR1 to BR3 exist between the gas supply hole 420a and the wafer 200 as well as the timing when the columns BR1 to BR3 do not exist between the supply hole 420a and the wafer 200 has been described.

  In the second embodiment, as will be described in detail below, an example in which the supply of the processing gas is suppressed at the timing when the pillars BR1 to BR3 exist between the gas supply hole 420a and the wafer 200 will be described. To do. The second embodiment is different from the first embodiment in the NH 3 gas supply mode. In addition, the supply mode and the like of the TiCl 4 gas are the same as those in the first embodiment. Processing conditions such as pressure, supply flow rate, and temperature at the time of supplying each gas may be the same as those in the first embodiment, for example.

  As shown in FIG. 8, in the second embodiment, columns BR1 to BR3 exist between the gas supply hole 420a and the wafer 200 during the NH3 gas supply period defined by the process gas supply sequence of each cycle. At the timing (and in the vicinity thereof), the supply amount of NH3 gas is reduced compared to other timings (before and after) (timing at which the columns BR1 to BR3 do not exist between the gas supply hole 420a and the wafer 200). .

  More specifically, at the timing (and the vicinity) where the pillars BR1 to BR3 exist between the gas supply hole 420a and the wafer 200, the valve 324 is closed to stop the NH3 gas supply from the gas supply hole 420a. . In this way, NH 3 gas is supplied to the wafer 200 at a timing selected so that the pillars BR 1 to BR 3 do not exist between the gas supply hole 420 a and the wafer 200.

  It should be noted that at the timing (and the vicinity thereof) where the pillars BR1 to BR3 exist between the gas supply hole 420a and the wafer 200, the flow rate of the NH3 gas is reduced by the MFC 322 without closing the valve 324 and stopping the NH3 gas supply. You may make it reduce so that the influence by the collision of the gas flow to pillar BR1-BR3 may fall (preferably to such an extent that it eliminates substantially). Thereby, it can suppress that the flow of NH3 gas is inhibited by pillar BR1-BR3. Note that the case where the valve 324 is closed to stop the NH 3 gas supply can be regarded as one mode of such a gas flow rate reduction.

  If a time lag occurs after the valve 324 is closed until the actual supply of NH3 gas stops, or after the flow rate is adjusted by the MFC 322 and the flow rate of the NH3 gas actually changes, this time lag is considered. Thus, the timing for closing the valve 324 and the timing for adjusting the flow rate with the MFC 322 can be adjusted.

  In the present embodiment, the gas supply hole 410a and the gas supply hole 420a are simply described as being in the same rotational direction position. However, the rotation of the gas supply hole 420a with respect to the rotational direction position of the gas supply hole 410a is described. When the direction position is deviated, the timing for closing the valve 324 and the timing for adjusting the flow rate by the MFC 322 can be adjusted in consideration of the time lag corresponding to the deviation.

  In the second embodiment, the TiCl4 gas flow is inhibited from being blocked by the columns BR1 to BR3 as in the first embodiment, and the NH3 gas flow is also inhibited by the columns BR1 to BR3. It is suppressed. Thereby, the partial reduction of the film formation rate as described above is further suppressed, and the in-plane uniformity of film formation can be further improved.

<Third Embodiment of the Present Invention>
In the first and second embodiments, the example in which TiCl4 gas and NH3 gas are alternately supplied has been described. In the third embodiment, an example in which TiCl 4 gas and NH 3 gas are supplied simultaneously will be described.

  As shown in FIG. 9, in the third embodiment, TiCl 4 gas and NH 3 gas are continuously supplied, respectively. For this reason, the timing at which the pillars BR1 to BR3 exist between the gas supply hole 410a and the wafer 200 during the TiCl4 gas supply period is included, and the gas supply hole 420a and the wafer 200 between the gas supply hole 420a and the wafer 200 exist during the NH3 gas supply period. The timing at which the pillars BR1 to BR3 exist in between is included.

  In the third embodiment, regarding the supply of TiCl4 gas, at the timing (and the vicinity thereof) where the pillars BR1 to BR3 exist between the gas supply hole 410a and the wafer 200, the other timing (the gas supply hole 410a and Compared with the timing at which the pillars BR1 to BR3 do not exist between the wafer 200 and the wafer 200, the supply amount of the TiCl4 gas is reduced. Similarly, regarding the supply of NH3 gas, at the timing (and the vicinity thereof) where the pillars BR1 to BR3 exist between the gas supply hole 420a and the wafer 200, the other timing (the gas supply hole 420a and the wafer 200) The supply amount of NH3 gas is reduced compared to the timing when the columns BR1 to BR3 do not exist between the two. The method of reducing the supply amount of TiCl 4 gas and NH 3 gas is the same as the method of reducing the supply amount applied to supply of NH 3 gas in the second embodiment.

  For example, at the timing when the pillars BR1 to BR3 exist between the gas supply hole 410a and the wafer 200 (and the vicinity thereof), the valve 314 is closed to stop the supply of TiCl4 gas from the gas supply hole 410a. In such a case, TiCl 4 gas is supplied to the wafer 200 at a timing selected so that the pillars BR 1 to BR 3 do not exist between the gas supply hole 410 a and the wafer 200. Further, for example, at the timing (and the vicinity thereof) where the pillars BR1 to BR3 exist between the gas supply hole 420a and the wafer 200, the valve 324 is closed to stop the NH3 gas supply from the gas supply hole 420a. In such a case, NH 3 gas is supplied to the wafer 200 at a timing selected so that the pillars BR 1 to BR 3 do not exist between the gas supply hole 420 a and the wafer 200.

  Note that the flow rate of the TiCl4 gas is reduced without stopping the supply of TiCl4 gas from the gas supply hole 410a at the timing (and the vicinity thereof) where the pillars BR1 to BR3 exist between the gas supply hole 410a and the wafer 200. Thus, the flow of the TiCl4 gas may be inhibited from being inhibited by the columns BR1 to BR3. Further, the flow rate of the NH 3 gas is reduced without stopping the supply of the NH 3 gas from the gas supply hole 420 a at the timing (and the vicinity thereof) when the pillars BR 1 to BR 3 exist between the gas supply hole 420 a and the wafer 200. By doing so, the NH3 gas flow may be inhibited from being blocked by the columns BR1 to BR3.

  The processing conditions such as pressure, supply flow rate, and temperature when supplying the TiCl 4 gas and NH 3 gas can be the same as those in the first embodiment, for example.

  In the third embodiment, the flow of TiCl4 gas is suppressed from being inhibited by the columns BR1 to BR3, and the flow of NH3 gas is also inhibited from being inhibited by the columns BR1 to BR3. Thereby, the partial reduction of the film formation rate as described above is suppressed, and the effect of improving the in-plane uniformity of the film formation can be obtained.

  In addition, by applying such a gas supply amount reduction that suppresses the flow of the processing gas to be inhibited by the pillars BR1 to BR3 to at least one of the TiCl4 gas and the NH3 gas, the TiCl4 gas and The effects described above can be obtained as compared with the case where all of the NH 3 gas is supplied simultaneously without applying such a reduction in the supply amount.

<Fourth to Tenth Embodiments of the Present Invention>
Next, fourth to tenth embodiments will be described. FIG. 11 shows an example in which a gas supply operation for supplying NH 3 gas simultaneously with TiCl 4 gas supply is added to the NH 3 gas supply sequence in the first embodiment as the fourth embodiment.

  FIG. 12 shows an example in which a gas supply operation for supplying TiCl 4 gas simultaneously with NH 3 gas supply is added to the TiCl 4 gas supply sequence in the first embodiment as the fifth embodiment.

  In FIG. 13, as a sixth embodiment, a gas supply operation for supplying NH 3 gas simultaneously with TiCl 4 gas supply is added to the NH 3 gas supply sequence in the first embodiment, and in the first embodiment, An example is shown in which a gas supply operation for supplying TiCl 4 gas simultaneously with NH 3 gas supply is added to the TiCl 4 gas supply sequence.

  FIG. 14 shows an example in which one of NH3 gas and TiCl4 gas, for example, NH3 gas is continuously supplied and the other of NH3 gas and TiCl4 gas, for example, TiCl4 gas, is intermittently supplied as the seventh embodiment. . TiCl4 gas is supplied so as to avoid collision with the pillars BR1 to BR3 in any supply period.

  FIG. 15 shows an example in which a gas supply operation for supplying NH 3 gas simultaneously with TiCl 4 gas supply is added to the NH 3 gas supply sequence in the second embodiment as an eighth embodiment.

  FIG. 16 shows an example in which a gas supply operation for supplying TiCl 4 gas simultaneously with NH 3 gas supply is added to the TiCl 4 gas supply sequence in the second embodiment as the ninth embodiment.

  In FIG. 17, as a tenth embodiment, a gas supply operation for supplying NH 3 gas simultaneously with TiCl 4 gas supply is added to the NH 3 gas supply sequence in the second embodiment, and in the first embodiment, An example is shown in which a gas supply operation for supplying TiCl 4 gas simultaneously with NH 3 gas supply is added to the TiCl 4 gas supply sequence.

  In the fourth and seventh to tenth embodiments, the TiCl 4 gas is supplied so as to avoid collision with the pillars BR 1 to BR 3 in any supply period, and the in-plane uniformity of film formation is improved. It is illustrated. In the eighth to tenth embodiments, the NH3 gas is supplied so as to avoid collision with the pillars BR1 to BR3 in any supply period, and the in-plane uniformity of film formation is improved. Yes. In the fifth and sixth embodiments, a period in which TiCl4 gas or NH3 gas is supplied is provided so as to avoid collision with the columns BR1 to BR3, and collision with the columns BR1 to BR3 is not always avoided. Compared with the case, the in-plane uniformity of film formation can be improved.

  In the fourth embodiment and the like, a period for supplying the TiCl4 gas and the NH3 gas at the same time is provided. That is, there is a period in which the TiCl4 gas and the NH3 gas are supplied at the same time. It is not essential to match the gas supply start timing with the NH 3 gas supply start timing, and it is not essential to match the TiCl 4 gas supply stop timing with the NH 3 gas supply stop timing.

<Other Embodiments of the Present Invention>
Each above-mentioned embodiment can be used in combination as appropriate. Furthermore, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the invention.

  In the above-described embodiment, the example in which the film forming process is performed has been described. However, the present invention is not limited to the application to the film forming process, and the horizontal direction of the substrate while rotating the substrate supported by the pillar. The present invention can be widely applied to substrate processing performed by supplying a processing gas from the outside. Since the flow of the processing gas is suppressed from being hindered by the pillar of the substrate support, the in-plane uniformity of the substrate processing using the processing gas can be improved. In addition to the film forming process, for example, the present invention can be applied to an etching process in which etching is performed by supplying a processing gas, and the in-plane uniformity of etching can be improved.

  The application to the film formation process is not limited to the case where a conductive film such as a metal film is formed as in the above-described embodiment, but can be applied to the case where a semiconductor film or an insulating film is formed. Applicable films include, for example, W film, WN film, TaN film, MoN film, ZnN film, WC film, TiC film, TaC film, MoC film, ZnC film, WCN film, TiCN film, TaCN film, MoCN film Metal nitride films such as ZnCN films, metal carbide films, Cu films, Ru films, metal films such as Al films, HfO films, ZrO films, AlO films, HfSiO films, ZrSiO films, AlSiO films, etc. Examples thereof include a high dielectric constant film, a film combining these, a Si film, a SiN film, a SiO film, a SiCN film, a SiON film, a SiOC film, and a film combining these.

  Note that there is no particular limitation on a processing gas such as a raw material gas or a reaction gas used for the film formation process, but examples of the processing gas include titanium tetrafluoride (TiF4), tungsten hexachloride (WCl6), and tungsten hexafluoride ( WF6), tantalum pentachloride (TaCl5), tantalum pentafluoride (TaF5), molybdenum hexachloride (MoCl6), molybdenum hexafluoride (MoF6), zinc dichloride (ZnCl2), zinc difluoride (ZnF2), dichloride Copper (CuCl2), Copper difluoride (CuF2), Ruthenium trichloride (RuCl3), Ruthenium trifluoride (RuF3), Ruthenium tribromide (RuBr3), Aluminum trichloride (AlCl3), Aluminum trifluoride (AlF3) , Trimethylaluminum ((CH3) 3Al, abbreviation: TMA), hafnium tetrachloride (HfCl ), Hafnium tetrafluoride (HfF4), tetrakis (ethylmethylamino) hafnium (Hf [N (C2H5) (CH3)] 4, abbreviation: TEMAH) gas, tetrakis (dimethylamino) hafnium (Hf [N (CH3) 2 ], Abbreviation: TDMAH) gas, tetrakis (diethylamino) hafnium (Hf [N (C2H5) 2] 4, abbreviation: TDEAH) gas, zirconium tetrachloride (ZrCl4), zirconium tetrafluoride (ZrF4), tetrakis (ethylmethyl) Amino) zirconium (Zr [N (C2H5) (CH3)] 4, abbreviation: TEMAZ) gas, tetrakis (dimethylamino) zirconium (Zr [N (CH3) 2] 4, abbreviation: TDMAZ) gas, tetrakis (diethylamino) zirconium (Zr [N (C2H5) 2] 4, abbreviation: DEAZ) gas, hexachlorodisilane (Si2Cl6, abbreviation: HCDS) gas, tetrachlorosilane or silicon tetrachloride (SiCl4, abbreviation: STC) gas, trichlorosilane (SiHCl3, abbreviation: TCS) gas, dichlorosilane (SiH2Cl2, abbreviation: DCS) Gas, monochlorosilane (SiH 3 Cl, abbreviation: MCS) gas, monosilane (SiH 4) gas, disilane (Si 2 H 6) gas, trisilane (Si 3 H 8) gas, tetrakis (dimethylamino) silane (Si [N (CH 3) 2] 4, abbreviation: 4DMAS) gas, tris (dimethylamino) silane (Si [N (CH3) 2] 3H, abbreviation: 3DMAS) gas, bis (diethylamino) silane (Si [N (C2H5) 2] 2H2, abbreviation: BDEAS) gas, bis (Tur And the like, and the like, and the like. (Shibutylbutyl) silane (SiH 2 [NH (C 4 H 9)] 2, abbreviation: BTBAS) gas, and the like can be given.

  In the above-described embodiment, in the example of supplying a processing gas containing a plurality of types of gases (specifically, TiCl4 gas and NH3 gas), these gases are supplied to gas supply holes (specifically, nozzles) of separate nozzles. Although the example which supplies from the gas supply holes 410a and 420a) of 410 and 420 was demonstrated, it is good also as an aspect which supplies each gas of the process gas containing multiple types of gas from a common nozzle as needed.

  In the above-described embodiment, an example in which a processing gas containing a plurality of types of gas is supplied has been described. However, a processing gas containing only one type of gas may be used as necessary.

  In the above-described embodiment, the substrate processing apparatus is a batch type vertical apparatus that processes a plurality of substrates at a time, and a nozzle for supplying a processing gas is erected in one reaction tube. Although an example of forming a film using a processing furnace having a structure in which an exhaust port is provided in the lower part has been described, the present invention can also be applied to a case where a film is formed using a processing furnace having another structure. For example, there are two reaction tubes having a concentric cross section (the outer reaction tube is called an outer tube and the inner reaction tube is called an inner tube), and a side wall of the outer tube is provided from a nozzle standing in the inner tube. However, the present invention can also be applied to a case where a film is formed using a processing furnace having a structure in which a processing gas flows to an exhaust port that opens to a position (axisymmetric position) facing the nozzle with the substrate interposed therebetween. Further, the processing gas may be supplied from a gas supply port that opens in a side wall of the inner tube, instead of being supplied from a nozzle standing in the inner tube. At this time, the exhaust port opened to the outer tube may be opened according to the height at which there are a plurality of substrates stacked and accommodated in the processing chamber. Further, the shape of the exhaust port may be a hole shape or a slit shape.

  In the above-described embodiment, an example in which a thin film is formed using a substrate processing apparatus having a hot wall type processing furnace has been described. However, the present invention is not limited to this, and a cold wall type processing furnace is provided. The present invention can also be suitably applied when forming a thin film using a substrate processing apparatus. Even in these cases, the processing conditions can be the same processing conditions as in the above-described embodiment, for example.

  Even when these substrate processing apparatuses are used, film formation can be performed with the same sequence and processing conditions as in the above-described embodiment.

  The process recipes (programs describing processing procedures and processing conditions) used to form these various thin films are the contents of the substrate processing (film type, composition ratio, film quality, film thickness, processing procedure, processing of the thin film to be formed) It is preferable to prepare individually (multiple preparations) according to the conditions. And when starting a substrate processing, it is preferable to select a suitable process recipe suitably from several process recipes according to the content of a substrate processing. Specifically, the substrate processing apparatus includes a plurality of process recipes individually prepared according to the contents of the substrate processing via an electric communication line or a recording medium (external storage device 123) on which the process recipe is recorded. It is preferable to store (install) in the storage device 121c in advance. When starting the substrate processing, the CPU 121a included in the substrate processing apparatus appropriately selects an appropriate process recipe from a plurality of process recipes stored in the storage device 121c according to the content of the substrate processing. Is preferred. With this configuration, thin films with various film types, composition ratios, film qualities, and film thicknesses can be formed for general use with good reproducibility using a single substrate processing apparatus. In addition, it is possible to reduce the operation burden on the operator (such as an input burden on the processing procedure and processing conditions), and to quickly start the substrate processing while avoiding an operation error.

  The present invention can also be realized by changing a process recipe of an existing substrate processing apparatus, for example. When changing a process recipe, the process recipe according to the present invention is installed in an existing substrate processing apparatus via a telecommunication line or a recording medium recording the process recipe, or input / output of the existing substrate processing apparatus It is also possible to operate the apparatus and change the process recipe itself to the process recipe according to the present invention.

  The various embodiments described above can be used in appropriate combination. The processing conditions at this time can be set to the same processing conditions as in the above-described embodiment, for example.

  As an example, a film was formed by the same process gas supply process (see FIG. 6A) as the example described in the first embodiment. In addition, as a comparative example, a film was formed by the same process gas supply process (see FIG. 10A) as the example described in the comparative embodiment.

  With reference to FIG. 18A and FIG. 18B, the results of Examples and Comparative Examples will be described. FIG. 18A is a graph showing the film thickness distribution in the wafer plane. In FIG. 18A, the horizontal axis indicates the distance from the wafer center in mm units, and the vertical axis indicates the film thickness in arbitrary units. FIG. 18B is a graph showing the film thickness ratio around each boat column with respect to the average film thickness in the wafer plane. In FIG. 18 (b), the average film thickness is plotted on the horizontal axis, and the results for each of the three boat pillars A to C are shown side by side, and the vertical axis represents the film thickness ratio with respect to the average film thickness. In FIGS. 18A and 18B, the example is represented as “no column collision” and the comparative example is “with column collision”.

  In the embodiment, as compared with the comparative example, the film thickness at the center of the wafer can be increased and the thinning around the boat column can be reduced. In this way, by suppressing the collision of the gas flow with the column, the film formation rate around the wafer center and the boat column can be increased, and the in-plane uniformity of the film formation can be improved.

<Preferred embodiment of the present invention>
Hereinafter, preferred embodiments of the present invention will be additionally described.

(Appendix 1)
According to one aspect of the invention,
A step of rotating a substrate support that is housed in the processing chamber and the substrate is supported by a column; and in a state where the substrate support is rotating, from a first gas supply hole located on the outer side in the horizontal direction of the substrate Supplying a processing gas containing a first gas to the substrate, and in the step of supplying the processing gas, the column is provided between the first gas supply hole and the substrate. A semiconductor device manufacturing method or a substrate processing method for supplying the first gas to the substrate at a timing selected so as not to exist is provided.

(Appendix 2)
According to another aspect of the invention,
A step of rotating a substrate support that is housed in the processing chamber and the substrate is supported by a column; and in a state where the substrate support is rotating, from a first gas supply hole located on the outer side in the horizontal direction of the substrate Supplying a processing gas containing a first gas to the substrate, and in the step of supplying the processing gas, a gas flow of the processing gas ejected from the first gas supply hole; A method of manufacturing a semiconductor device that supplies the first gas to the substrate at a timing selected so that the column does not exist at a position where an angle formed with an outer edge of the substrate is a right angle, or a substrate A processing method is provided.

(Appendix 3)
The method according to appendix 1 or 2, preferably,
In the step of rotating the substrate support, the plurality of substrates including the substrate rotate the substrate support supported by the pillars, and in the step of supplying the processing gas, the substrate extends in the stacking direction of the plurality of substrates. Then, the processing gas is supplied through a nozzle provided with a plurality of gas supply holes including the first gas supply hole.

(Appendix 4)
The method according to any one of appendices 1-3, preferably,
In the step of supplying the processing gas, as the processing gas, in addition to the first gas, a second gas is supplied from a second gas supply hole located outside the substrate in the horizontal direction, and the first gas is supplied. And the second gas are time-divisionally (asynchronously, intermittently, pulsed) and supplied a predetermined number of times. Here, the second supply hole may be the same as or different from the first supply hole.

(Appendix 5)
The method according to appendix 4, preferably,
In the step of supplying the processing gas, the second gas is supplied to the substrate at a timing selected so that the column does not exist between the second gas supply hole and the substrate.

(Appendix 6)
The method according to appendix 4, preferably,
In the step of supplying the processing gas, the column is selected so that the column does not exist at a position where the angle formed between the gas flow of the processing gas ejected from the second gas supply hole and the outer edge of the substrate is a right angle. At this timing, the second gas is supplied to the substrate.

(Appendix 7)
The method according to any one of appendices 4 to 6, preferably,
In the step of supplying the processing gas, the first gas is selected according to a relationship between a cycle time for supplying the first gas and the second gas in a time-sharing manner and a rotation period of the substrate support. The first gas is supplied to the substrate at a timing selected so that the pillar does not exist between the supply hole and the substrate, and the second gas supply hole and the substrate are provided with the first gas. The second gas is supplied to the substrate at a timing selected so that the pillar does not exist.

(Appendix 8)
The method according to any one of appendices 4 to 6, preferably,
In the step of supplying the processing gas, the first gas is selected according to a relationship between a cycle time for supplying the first gas and the second gas in a time-sharing manner and a rotation period of the substrate support. At the timing selected so that the column does not exist at a position where the angle formed between the gas flow of the first gas ejected from the supply hole and the outer edge of the substrate is a right angle, the first gas is ejected from the substrate. 1 column is selected so that the column does not exist at a position where the angle formed by the gas flow of the second gas ejected from the second gas supply hole and the outer edge of the substrate is a right angle. At this timing, the second gas is supplied to the substrate.

(Appendix 9)
The method according to any one of appendices 1 to 8, preferably,
In the step of supplying the processing gas, the supply of the first gas is stopped at the timing when the column is present between the first gas supply hole and the substrate.

(Appendix 10)
The method according to any one of appendices 1 to 9, preferably,
The first gas is a metal-containing gas.

(Appendix 11)
The method according to appendix 1 or 2, preferably,
In the step of supplying the processing gas,
The process gas is supplied by repeating the sequence that defines the procedure in one cycle of the supply of the process gas and the start timing and stop timing of the supply of the first gas in the cycle. ,
Each time the sequence is repeated a certain number of times, the relationship between the length of the sequence (cycle time) and the rotation period of the substrate support is such that the start timing of the sequence is synchronized with the rotation timing of the substrate support. Selected,
The supply period of the first gas in any of the sequences performed during the period from when the start timing of the sequence and the rotation timing of the substrate support are synchronized at a certain timing to the next synchronization. The first gas is supplied to the substrate at a timing such that the column does not exist between the first gas supply hole and the substrate.

(Appendix 12)
The method according to appendix 11, preferably,
In the step of supplying the processing gas,
As the processing gas, in addition to the first gas, a second gas is supplied from a second gas supply hole located outside the substrate in the horizontal direction,
The sequence defines the start timing and stop timing of the supply of the first gas, and the first gas and the second gas are supplied in a time-sharing manner (asynchronously, intermittently, in pulses). As described above, the start timing and stop timing of the supply of the second gas are defined,
The supply period of the second gas in any one of the sequences performed during a period from when the start timing of the sequence and the rotation timing of the substrate support are synchronized at a certain timing to the next synchronization Includes a timing at which the column exists between the second gas supply hole and the substrate,
The column is provided between the second gas supply hole and the substrate during the supply period of the second gas including the timing at which the column exists between the second gas supply hole and the substrate. In the timing at which the second gas supply hole exists, the supply amount of the second gas is reduced as compared with the timing at which the column does not exist between the second gas supply hole and the substrate. Here, the second supply hole may be the same as or different from the first supply hole.

(Appendix 13)
According to yet another aspect of the invention,
A step of rotating a substrate support that is housed in a processing chamber and the substrate is supported by a column; and the substrate support is rotated, and the substrate is rotated from a gas supply hole positioned outside in the horizontal direction of the substrate. Supplying a processing gas to
And in the step of supplying the processing gas, at the timing when the column exists between the gas supply hole and the substrate, the timing at which the column does not exist between the gas supply hole and the substrate; In comparison, a method for manufacturing a semiconductor device or a substrate processing method for reducing the supply amount of the processing gas is provided.

(Appendix 14)
According to yet another aspect of the invention,
A step of rotating a substrate support that is housed in a processing chamber and the substrate is supported by a column; and the substrate support is rotated, and the substrate is rotated from a gas supply hole positioned outside in the horizontal direction of the substrate. Supplying a processing gas to
And in the step of supplying the processing gas, the column is present at a position where the angle formed by the gas flow of the processing gas ejected from the gas supply hole and the outer edge of the substrate is at a right angle. The supply amount of the processing gas is reduced compared to the timing when the column does not exist at a position where the angle formed by the gas flow of the processing gas ejected from the gas supply hole and the outer edge of the substrate is a right angle. A semiconductor device manufacturing method or a substrate processing method is provided.

(Appendix 15)
According to yet another aspect of the invention,
A processing chamber;
A substrate support having a column which is accommodated in the processing chamber and supports the substrate; and a rotation mechanism for rotating the substrate support;
A gas supply system for supplying a processing gas from a gas supply hole located on the outside in the horizontal direction of the substrate supported by the substrate support;
The column is not present between the gas supply hole and the substrate from the gas supply hole when the substrate support tool supporting the substrate is rotated and the substrate support tool is rotating. And a control unit configured to control the rotation mechanism and the gas supply system so as to perform the process of supplying the processing gas to the substrate at a timing selected by Is provided.

(Appendix 16)
According to yet another aspect of the invention,
A processing chamber;
A substrate support housed in the processing chamber and having a column for supporting the substrate;
A rotation mechanism for rotating the substrate support;
A gas supply system for supplying a processing gas from a gas supply hole located on the outside in the horizontal direction of the substrate supported by the substrate support;
A process of rotating the substrate support supported by the substrate; and a gas flow of the processing gas ejected from the gas supply hole and the gas flow of the process gas while the substrate support is rotating And a process of supplying the processing gas to the substrate at a timing selected so that the pillar does not exist at a position where an angle formed by an outer edge is a right angle. And a control unit configured to control the gas supply system.

(Appendix 17)
According to yet another aspect of the invention,
A processing chamber;
A substrate support housed in the processing chamber and having a column for supporting the substrate;
A rotation mechanism for rotating the substrate support;
A gas supply system for supplying a processing gas from a gas supply hole located on the outside in the horizontal direction of the substrate supported by the substrate support;
A process of rotating the substrate support on which the substrate is supported; and the process gas is supplied from the gas supply hole to the substrate in a state in which the substrate support is rotating; And a process of reducing the supply amount of the processing gas at a timing when the pillar is present between the substrate and the timing when the pillar is not present between the gas supply hole and the substrate. And a control unit configured to control the rotation mechanism and the gas supply system.

(Appendix 18)
According to yet another aspect of the invention,
A processing chamber;
A substrate support housed in the processing chamber and having a column for supporting the substrate;
A rotation mechanism for rotating the substrate support;
A gas supply system for supplying a processing gas from a gas supply hole located on the outside in the horizontal direction of the substrate supported by the substrate support;
A process of rotating the substrate support supported by the substrate; and supplying the processing gas from the gas supply hole to the substrate while the substrate support is rotating, and ejecting from the gas supply hole The gas flow of the processing gas ejected from the gas supply hole and the outer edge of the substrate are at a timing at which the column exists at a position where the angle formed by the gas flow of the processing gas and the outer edge of the substrate is at a right angle. The rotation mechanism and the gas supply system are controlled so as to perform a process of reducing the supply amount of the process gas compared to a timing at which the column does not exist at a position where the formed angle is a right angle. There is provided a substrate processing apparatus having a control unit configured.

(Appendix 19)
The substrate processing apparatus according to any one of appendices 15 to 18, preferably,
The substrate support supports a plurality of substrates including the substrate by the pillars, the gas supply system extends in a stacking direction of the plurality of substrates supported by the substrate support, and the gas supply holes The processing gas is supplied through a nozzle provided with a plurality of gas supply holes.

(Appendix 20)
According to yet another aspect of the invention,
A step of rotating a substrate support member accommodated in a processing chamber and supported by a pillar; and a gas supply hole located on the outer side in the horizontal direction of the substrate while the substrate support member is rotating. Supplying process gas to
And supplying the processing gas to the substrate at a timing selected so that the pillar does not exist between the gas supply hole and the substrate. A program to be executed or a computer-readable recording medium on which the program is recorded is provided.

(Appendix 21)
According to yet another aspect of the invention,
A step of rotating a substrate support member accommodated in a processing chamber and supported by a pillar; and a gas supply hole located on the outer side in the horizontal direction of the substrate while the substrate support member is rotating. Supplying process gas to
In the procedure for supplying the processing gas, the column is selected so that the column does not exist at a position where an angle formed between the gas flow of the processing gas ejected from the gas supply hole and the outer edge of the substrate is at a right angle. A program for performing a procedure for supplying the processing gas to the substrate at a given timing, or a computer-readable recording medium recording the program is provided.

(Appendix 22)
According to yet another aspect of the invention,
A step of rotating a substrate support member accommodated in a processing chamber and supported by a pillar; and a gas supply hole located on the outer side in the horizontal direction of the substrate while the substrate support member is rotating. Supplying process gas to
And in the procedure of supplying the processing gas, the timing at which the column is not present between the gas supply hole and the substrate at the timing at which the column is present between the gas supply hole and the substrate; In comparison, a program for performing a procedure for reducing the supply amount of the processing gas, or a computer-readable recording medium recording the program is provided.

(Appendix 23)
According to yet another aspect of the invention,
A step of rotating a substrate support member accommodated in a processing chamber and supported by a pillar; and a gas supply hole located on the outer side in the horizontal direction of the substrate while the substrate support member is rotating. Supplying process gas to
In the procedure of supplying the processing gas, at the timing when the column is present at a position where the angle formed between the gas flow of the processing gas ejected from the gas supply hole and the outer edge of the substrate is at a right angle, A procedure for reducing the supply amount of the processing gas compared to the timing at which the column does not exist at a position where the angle formed by the gas flow of the processing gas ejected from the gas supply hole and the outer edge of the substrate is at a right angle. A program to be executed or a computer-readable recording medium on which the program is recorded is provided.

10 substrate processing apparatus 200 wafer 201 processing chamber 202 processing furnace 203 reaction tube 217 boat 217 support groove BR, BR1 to BR3 boat column 410, 420 nozzle 410a, 420a gas supply hole

Claims (15)

A step of rotating a substrate support that supports the substrate accommodated in the processing chamber with a pillar;
A first gas supply step of supplying a first gas to the substrate from a first gas supply hole disposed horizontally on the outside of the substrate;
Continuously supplying an inert gas to the substrate from an inert gas supply hole located outside the substrate;
While rotating the substrate support, while continuously supplying the inert gas during at least one of the columns disposed between the first gas supply hole and the substrate, Stopping the first gas;
A method for manufacturing a semiconductor device comprising: A second gas supply step of supplying a second gas to the substrate from a second gas supply hole disposed horizontally outside the substrate while rotating the substrate support;
While the substrate support is rotated, the second gas is continuously supplied continuously for at least one of the columns arranged between the second gas supply hole and the substrate. And a process of
The manufacturing method of the semiconductor device of Claim 1 which has these. A second gas supply step of supplying a second gas to the substrate from a second gas supply hole disposed horizontally outside the substrate while rotating the substrate support;
A step of stopping the supply of the second gas while the column is disposed between the second gas supply hole and the substrate during the second gas supply step;
The manufacturing method of the semiconductor device of Claim 1 which has these.   The method of manufacturing a semiconductor device according to claim 3, wherein in the step of stopping the supply of the second gas, the second gas is stopped in a pulse manner.   4. The method of manufacturing a semiconductor device according to claim 2, wherein the first gas supply step and the second gas supply step are supplied in a time-sharing manner a predetermined number of times.   The method for manufacturing a semiconductor device according to claim 3, wherein the first gas supply step and the second gas supply step are performed in synchronization. In the first gas supply step, the first gas is supplied to the substrate in a first period in which the column is not positioned between the first gas supply hole and the substrate,
In the second gas supply step, the second gas is based on a relationship between a cycle time for supplying the first gas and the second gas in a time-sharing manner and a rotation period of the substrate support. The method of manufacturing a semiconductor device according to claim 3, wherein a second period in which the column is not positioned between the second gas supply hole and the substrate is set. A procedure for rotating a substrate support for supporting a substrate accommodated in a processing chamber with a pillar;
A first gas supply procedure for supplying a first gas to the substrate from a first gas supply hole disposed horizontally on the outside of the substrate;
A procedure for continuously supplying an inert gas to the substrate from an inert gas supply hole located outside the substrate;
While rotating the substrate support, while continuously supplying the inert gas during at least one of the columns disposed between the first gas supply hole and the substrate, A procedure for stopping the first gas;
A computer-readable recording medium on which a program for causing the substrate processing apparatus to execute is recorded. A second gas supply procedure for supplying a second gas to the substrate from a second gas supply hole disposed horizontally outside the substrate while rotating the substrate support;
While the substrate support is rotated, the second gas is continuously supplied continuously for at least one of the columns arranged between the second gas supply hole and the substrate. And the procedure
The recording medium according to claim 8. A second gas supply procedure for supplying a second gas to the substrate from a second gas supply hole disposed horizontally outside the substrate while rotating the substrate support;
A step of stopping the supply of the second gas during the second gas supply procedure while the column is disposed between the second gas supply hole and the substrate;
The recording medium according to claim 8.   The recording medium according to claim 10, wherein in the procedure of stopping the supply of the second gas, the second gas is stopped in a pulse manner. A processing chamber in which a substrate support that supports the substrate with a pillar is stored;
A rotation mechanism for rotating the substrate support;
A first gas supply system that is horizontally disposed outside the substrate and has a first gas supply hole for supplying a first gas to the substrate;
An inert gas supply system horizontally disposed outside the substrate and having an inert gas supply hole for supplying an inert gas to the substrate;
A step of supplying the first gas to the substrate; and at least one of the columns disposed between the first gas supply hole and the substrate while rotating the substrate support. A step of stopping the first gas while continuously supplying the inert gas, and the rotation mechanism, the first gas supply system, and the inert gas supply system to perform the process. A control unit to control;
A substrate processing apparatus. A second gas supply system horizontally disposed outside the substrate and having a second gas supply hole for supplying a second gas;
The controller is configured to supply a second gas to the substrate while rotating the substrate support, and to supply the second gas supply hole and the substrate while rotating the substrate support. The second gas supply system is controlled so as to perform the step of continuously supplying the second gas continuously during at least one of the columns disposed between them. The substrate processing apparatus according to claim 12. A second gas supply system horizontally disposed outside the substrate and having a second gas supply hole for supplying a second gas;
The controller includes a second gas supply step for supplying a second gas to the substrate while rotating the substrate support, and the second gas supply hole between the second gas supply step and the second gas supply step. The second gas supply system is configured to be controlled to perform the step of stopping the supply of the second gas while the column is disposed between the substrate and the substrate. 2. The substrate processing apparatus according to 1. 15. The first gas supply hole is configured so that a gas flow of the first gas supplied from the first gas supply hole and an outer edge of the substrate are perpendicular to each other. The substrate processing apparatus as described in any one of Claims.