JP2019022191A - Ac generating device - Google Patents

Abstract

To provide an ac generating device capable of controlling a phase of a slave in a wider range.SOLUTION: The AC generating device includes: an oscillator 1 for outputting an alternating current; a magnetic oscillation element 2 for converting electrical energy into AC power; a connection part 3 for electrically or magnetically connecting the oscillator 1 and the magnetic oscillation element 2; a first phase control unit 7 for controlling a phase of AC power; and a second phase control unit 6 for controlling a phase of AC power according to a different method from the first phase control unit 7, and synchronizes the oscillator 1 with the magnetic oscillation element 2.SELECTED DRAWING: Figure 1

Description

  The present invention relates to an AC generator.

  In recent years, with the advancement of high-frequency technology, the use of millimeter waves having a frequency of 30 GHz to 300 GHz and terahertz waves has become active. In order to operate a radar or a sensor using a high frequency, it is necessary to control the phase, but the control of the phase becomes difficult as the frequency of use increases.

  For example, a phased array radar has been proposed that includes a plurality of antennas and a phase shifter that is attached to each antenna and controls the phase of an electromagnetic wave transmitted from the antenna. In general, the phase of a high-frequency electromagnetic wave is controlled. The possible phase shifters are large and expensive.

  As another method for controlling the phase, a method of controlling the phase by a master-slave method in which a high-frequency current from a high-frequency oscillator serving as a master is injected into a high-frequency oscillator serving as a slave different from the master has been proposed (for example, , See Patent Document 1).

  In this method, the slave oscillates at a constant frequency in synchronization with the master. And the frequency difference before these synchronize appears as a phase difference. In general, a high frequency oscillator can change an oscillation frequency by an external force such as a voltage. Therefore, when the voltage or the like applied to the slave is changed in a synchronized state, the frequency is fixed because of synchronization with the master, and only the phase changes. Therefore, the phase of the slave can be controlled by changing the voltage applied to the slave.

Japanese Patent No. 4724864

  However, when a general high-frequency oscillator including a resistor, a coil, a capacitor, and the like is used as a slave as in Patent Document 1, the slave phase can be controlled only in the range of −π / 2 to π / 2, for example. In a phased array radar or the like, for example, phase control in the range of −π to π is required, so that the slave phase needs to be controlled in a wider range.

  Even if an oscillator that oscillates at a low frequency is used, the phase can be controlled by the master-slave method. In this case, it is desirable that the phase of the slave can be controlled in a wider range.

  An object of the present invention is to provide an AC generator which can control the phase of a slave in a wider range.

  In order to achieve the above object, according to the first aspect of the present invention, an oscillator (1) that outputs an alternating current, a magnetic oscillation element (2) that converts electrical energy into alternating current power, an oscillator and a magnetic oscillation element are provided. A connection unit (3) that is electrically or magnetically connected, a first phase control unit (7) that controls the phase of the AC power, and a first phase control unit that controls the phase of the AC power in a different manner from the first phase control unit. And a two-phase control unit (6) for synchronizing the oscillator and the magnetic oscillation element.

  According to this, a magnetic oscillation element (STO: Spin Torque Oscillator) is used as a slave, and further provided with a first phase control unit and a second phase control unit that control the phase of AC power generated by the magnetic oscillation element. Therefore, the slave phase can be controlled in a wider range.

  In addition, the code | symbol in the bracket | parenthesis of each said means shows an example of a corresponding relationship with the specific means as described in embodiment mentioned later.

It is a figure which shows the structure of the alternating current generator concerning 1st Embodiment. It is sectional drawing of the magnetic oscillation element of FIG. It is a circuit diagram of the modification of 1st Embodiment. It is sectional drawing of the magnetic oscillation element in the alternating current generator concerning 2nd Embodiment. It is a figure which shows the structure of the alternating current generator concerning 3rd Embodiment. It is a circuit diagram of the modification of 3rd Embodiment. It is a figure which shows the structure of the alternating current generator concerning 4th Embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other will be described with the same reference numerals.

(First embodiment)
A first embodiment will be described. First, with reference to FIG. 1, the whole structure of the alternating current generator of this embodiment is demonstrated. As shown in FIG. 1, the AC generator 100 of the present embodiment includes an oscillator 1, an STO 2, a connection unit 3, a power supply 4, a control unit 5, a control unit 6, and a phase control unit 7. ing.

  The oscillator 1 is a device that converts a direct current / voltage supplied from a power supply 4 via a control unit 5 into an alternating current and outputs the alternating current. The STO 2 converts supplied electric energy into alternating current power, and is configured by laminating a plurality of films. Details of STO2 will be described later.

  The alternating current output from the oscillator 1 and the alternating current power output from the STO 2 are, for example, a high frequency current and high frequency power of 10 kHz or more. Here, a case where the oscillator 1 outputs a high-frequency current and the STO 2 outputs high-frequency power will be described.

  The connection unit 3 electrically connects the oscillator 1 and the STO 2 and includes a wiring 31. The STO 2 is connected to the oscillator 1 via the wiring 31 in the lower electrode 21 and the upper electrode 27 described later, and the high-frequency current output from the oscillator 1 flows through the wiring 31 and the STO 2.

  The power supply 4 supplies a direct current / voltage to the oscillator 1, the STO 2, and a wiring 72 described later via the control unit 5, the control unit 6, and a control unit 71 described later. The control unit 5 corresponds to a frequency control unit, and adjusts the frequency of the high-frequency current output from the oscillator 1 by changing the magnitude of the direct current / voltage supplied from the power source 4 to the oscillator 1.

  The control unit 6 adjusts the magnitude of the direct current / voltage supplied from the power supply 4 and supplies the adjusted DC current / voltage to the STO 2. The STO 2 is connected to the oscillator 1 and to the control unit 6 at the lower electrode 21 and the upper electrode 27 described later, and in this embodiment, the current supplied from the control unit 6 to the STO 2 is the lower electrode 21. To the upper electrode 27.

  The control unit 6 corresponds to a frequency control unit, and adjusts the frequency of the high-frequency power generated by the STO 2 by changing the magnitude of the direct current / voltage supplied to the STO 2. In the present embodiment, the control unit 5 and the control unit 6 adjust the frequency of the high-frequency current output from the oscillator 1 and the high-frequency power generated by the STO 2 so that the oscillator 1 and the STO 2 are synchronized.

  The control unit 6 corresponds to a second phase control unit, and changes the phase of the high-frequency power generated by the STO 2 by changing the magnitude of the direct current / voltage supplied to the STO 2.

  The phase controller 7 controls the phase of the high frequency power generated by the STO 2 and corresponds to a first phase controller. The phase control unit 7 includes a control unit 71 and a wiring 72, and the control unit 71 adjusts the magnitude of the direct current / voltage supplied from the power supply 4 and supplies it to the wiring 72. The wiring 72 is disposed around the STO 2, and when a current flows through the wiring 72, a magnetic field passing through the STO 2 is generated in the stacking direction of a plurality of films constituting the STO 2. In the present embodiment, the phase control unit 7 changes the phase of the high-frequency power generated by the STO 2 by applying a magnetic field to the non-oscillation layer 23 described later and changing the magnetization direction of the non-oscillation layer 23.

  Next, details of the STO 2 will be described with reference to FIG. The STO 2 includes a lower electrode 21, a base layer 22, a non-oscillation layer 23, an intermediate layer 24, an oscillation layer 25, a cap layer 26, and an upper electrode 27. It is laminated and configured.

  The lower electrode 21 is made of a conductive material such as Ru, Cu, CuN, or Au, and is formed in a thin film shape on a substrate (not shown). The underlayer 22 is made of Ta, Ru, or the like, and is formed on the lower electrode 21 in a thin film shape. The foundation layer 22 is a foundation for forming the non-oscillation layer 23 with improved crystallinity and orientation.

  The non-oscillating layer 23 is made of a ferromagnetic material such as Co, Fe, or Ni, or is made of a ferromagnetic material and B, and is formed on the underlayer 22 in a thin film shape. The non-oscillation layer 23 has a magnetization easy axis in the plane direction of the non-oscillation layer 23, and the magnetization direction changes when a magnetic field is applied. In addition to the above materials, the non-oscillating layer 23 may be formed using Pt and Pd. Further, the non-oscillation layer 23 may be configured using a high magnetic anisotropic material such as GaMn, FePt (Pd), CoPt (Pd, Ni).

The intermediate layer 24 is made of MgO, Al—O _x , Cu, Ag, or the like, and is formed on the non-oscillation layer 23 in a thin film shape. Depending on the angle between the magnetization direction of the non-oscillating layer 23 and the magnetization direction of the oscillating layer 25, the resistance value of the portion of the STO 2 composed of the non-oscillating layer 23, the intermediate layer 24, and the oscillating layer 25 changes. When the intermediate layer 24 is made of an insulator such as MgO or Al—O _x , a TMR (Tunneling Magneto Resistance) element is formed by stacking the non-oscillation layer 23, the intermediate layer 24, and the oscillation layer 25. When the intermediate layer 24 is made of a conductor such as Cu or Ag, a GMR (Giant Magneto Resistance) element is formed by stacking the non-oscillation layer 23, the intermediate layer 24, and the oscillation layer 25. Here, the case where the intermediate layer 24 is formed of an insulator or a conductor has been described. However, the intermediate layer 24 may be formed of a semiconductor.

  The oscillation layer 25 is made of a ferromagnetic material such as Co, Fe, or Ni, or is made of a ferromagnetic material and B, and is formed on the intermediate layer 24 in a thin film shape. The oscillation layer 25 has a magnetization easy axis in the thickness direction, and the magnetization direction changes when a magnetic field is applied. In addition to the above materials, the oscillation layer 25 may be formed using Pt and Pd. Further, the oscillation layer 25 may be configured using a high magnetic anisotropic material such as GaMn, FePt (Pd), CoPt (Pd, Ni). Further, the oscillation layer 25 may have a laminated structure of CoFeB / GaMn, CoFeB / FePt, or the like. The oscillation layer 25 may have a laminated structure such as CoFeB / Ta / GaMn.

  As will be described later, the oscillation layer 25 resonates with a high-frequency current. By forming the oscillation layer 25 thinner than the non-oscillation layer 23, the oscillation layer 25 is more likely to resonate with a high-frequency current than the non-oscillation layer 23, but the thickness of the oscillation layer 25 is the thickness of the non-oscillation layer 23. It may be more than that.

  The cap layer 26 is made of Ta, Ru, or the like, and is formed on the oscillation layer 25 in a thin film shape. The cap layer 26 is for protecting the oscillation layer 25. As will be described later, when CoFeB or the like is used for the oscillation layer 25, it also serves as an absorption layer for diffusing B in CoFeB.

  The upper electrode 27 is made of a conductive material such as Au, Cu, CuN, or Ru, and is formed on the cap layer 26 in a thin film shape. Such an STO 2 can be manufactured by sequentially forming each layer on a substrate (not shown).

  In the case where CoFeB is used for the non-oscillation layer 23 and the oscillation layer 25, first, CoFeB is formed in an amorphous state. However, since B is inserted, it becomes amorphous even if nothing is done. A film of MgO is formed on the amorphous CoFeB with (001) orientation. A CoFeB film is formed thereon in an amorphous state, and a cap layer 26 is formed. Thereafter, by performing heat treatment at 300 to 350 ° C., B in CoFeB diffuses into the MgO layer, the cap layer 26, or the underlayer 22, and crystallizes from amorphous to bcc (001) orientation. Thus, the crystallization of CoFeB / MgO / CoFeB leads to high MR ratio (magnetoresistance ratio), that is, high output of high-frequency power.

  The operation of AC generator 100 will be described. The AC generator 100 controls the phase of the high-frequency power generated by the STO 2 by a master-slave method using the oscillator 1 as a master and the STO 2 as a slave.

  First, a direct current / voltage is supplied to the oscillator 1 by the power source 4 and the control unit 5, and the oscillator 1 converts the supplied direct current / voltage into a high-frequency current and outputs it. The high-frequency current output from the oscillator 1 flows through the wiring 31 and STO2.

  In addition, a DC voltage is applied to the STO 2 by the power source 4 and the control unit 6, and a DC current flows through the STO 2. In this embodiment, this direct current flows from the non-oscillation layer 23 to the oscillation layer 25. At this time, electrons move from the oscillation layer 25 to the non-oscillation layer 23.

  The magnetization of the oscillation layer 25 precesses due to electron spin torque. As the magnetization of the oscillation layer 25 precesses, the resistance of the STO 2 constantly changes due to the MR effect, and high-frequency current / voltage is generated at both ends of the STO 2, thereby generating high-frequency power. That is, the direct current / voltage is converted into high frequency power.

  The frequency of the high-frequency power varies depending on the material constituting the STO 2 and the magnitude of current / voltage supplied from the control unit 6. Further, the frequency of the high-frequency current output from the oscillator 1 varies depending on the magnitude of the current / voltage supplied from the control unit 5. When the frequency of the high-frequency current output from the oscillator 1 is f1, the frequency of the high-frequency power generated by the STO 2 is f2, and m and n are natural numbers, the control unit 5 and the control unit 6 have f2 = f1 · n / m. Thus, the magnitude of the current / voltage supplied to the oscillator 1 and the STO 2 is changed. As a result, the oscillation layer 25 resonates with the high frequency current, and the oscillator 1 and the STO 2 are synchronized.

  The oscillator 1 and the STO 2 are easily synchronized when m = 1, that is, f2 = f1 · n, and when n = 1, that is, f2 = f1 / m, and are further synchronized as m and n are smaller. Cheap. Specifically, the oscillator 1 and the STO 2 are easily synchronized when the frequency f2 is equal to any of f1 / 4, f1 / 3, f1 / 2, f1, 2f1, 3f1, and 4f1. The oscillator 1 and STO2 are more likely to synchronize when the frequency f2 is equal to either f1 / 2, f1, or 2f1, and are particularly likely to synchronize when f2 = f1. In the present embodiment, the control unit 5 and the control unit 6 adjust the magnitude of the direct current / voltage supplied to the oscillator 1 and the STO 2 so that f2 = f1.

  The AC generator 100 changes the phase of the high-frequency power generated by the STO 2 by the control unit 6 and the phase control unit 7 in a state where the oscillator 1 and the STO 2 are synchronized.

  Specifically, the phase control unit 7 applies a magnetic field generated when a direct current flows through the wiring 72 by the power source 4 and the control unit 71 to the STO 2. As described above, since the magnetization direction of the non-oscillation layer 23 of the STO 2 is changed by an external magnetic field, the magnetization direction of the non-oscillation layer 23 is changed by applying a magnetic field to the STO 2 including the non-oscillation layer 23. Thereby, the phase of the high frequency electric power which STO2 generates changes.

  For example, the phase of the high frequency power is set to 0, π / 2, π or −π, −π / 2 by setting the magnetization direction of the non-oscillation layer 23 to the right, upward, leftward, and downward, respectively, in FIG. be able to. The relationship between the magnetization direction of the non-oscillation layer 23 and the phase of the high-frequency power is an example, and these relationships vary depending on the material constituting the STO 2.

  Further, when the control unit 6 slightly changes the magnitude of the direct current / voltage supplied to the STO 2 in a state where the oscillator 1 and the STO 2 are synchronized, the frequency f2 of the high frequency power does not change due to the synchronization, and the phase Changes.

  For example, when the frequencies f1 and f2 are several GHz, the phase of the high-frequency power is changed while maintaining the state in which the high-frequency current and the high-frequency power are synchronized by changing the magnitude of the DC voltage supplied to the STO 2 by several mV. Can be changed. Note that the relationship between the magnitude of the direct current / voltage supplied to the STO 2 and the frequency and phase of the high-frequency power varies depending on the material constituting the STO 2 and the like.

  Thus, by changing the phase of the high-frequency power by two methods, the phase can be controlled in a wider range than in the past, for example, in the range of −π to π.

  The difference between the maximum value and the minimum value of the phase that can be set by the control unit 6 is π. For example, the phase can be controlled in the range of −π / 2 to π / 2. Further, the difference between the maximum value and the minimum value of the phase that can be set by the phase controller 7 is 2π, and in principle, the phase can be controlled in the range of −π to π. That is, the phase of the high frequency power can be controlled by the phase control unit 7 only in a wider range than in the past.

  However, when the phase is controlled only by the phase controller 7, the oscillation characteristics may not be favorable. On the other hand, a preferable oscillation is achieved by controlling the phase by combining the phase control unit 7 and the control unit 6 that changes the phase of the high frequency power by a method different from the phase control unit 7 as in the present embodiment. Characteristics can be obtained. This also makes it possible to control the phase with higher accuracy.

  In addition, it is good also as a structure which connects an antenna to STO2 and transmits a high frequency electromagnetic wave from this antenna. FIG. 3 is a diagram illustrating an example of a circuit when an antenna is connected to the STO 2. As shown in FIG. 3, the STO 2 is connected to the antenna 9 via the separation circuit 8. The separation circuit 8 separates the output current of the oscillator 1 and the control unit 6 and the output current of the STO 2 and includes a filter 81. For example, the output current of the oscillator 1 and the control unit 6 is input to the antenna 9 by setting f1 = f2 / 2 and making the filter 81 a high-pass filter that cuts off the signal of the frequency f1 and passes the signal of the frequency f2. Is suppressed. And when the high frequency current which STO2 outputs flows into the antenna 9, a high frequency electromagnetic wave is transmitted.

  In the modification shown in FIG. 3, it is necessary to set f1 and f2 to different values as described above, and to control the current using a filter. Therefore, in order to facilitate synchronization of the master and the slave in the modification shown in FIG. 3, it is preferable that the frequency f2 is equal to any of f1 / 4, f1 / 3, f1 / 2, 2f1, 3f1, and 4f1.

(Second Embodiment)
A second embodiment will be described. In the present embodiment, the phase control method is changed with respect to the first embodiment, and the others are the same as those in the first embodiment. Therefore, only the parts different from the first embodiment will be described.

  In the present embodiment, the control unit 6 adjusts the magnitude of the direct current / voltage supplied from the power supply 4 and supplies it to the STO 2, and changes the frequency of the high frequency power by injecting the spin current into the oscillation layer 25. Let

  Specifically, as shown in FIG. 4, the STO 2 includes a spin current injection layer 28 disposed on the opposite side of the intermediate layer 24 with respect to the oscillation layer 25. The spin current injection layer 28 is for injecting a spin current into the oscillation layer 25 and is made of, for example, Pt.

  The spin current injection layer 28 is connected to the control unit 6 at both ends in the plane direction. When a current flows from the control unit 6 to the spin current injection layer 28, the spin current injection layer 28 oscillates by the spin Hall effect. A spin current is injected into 25, and the frequency of the high-frequency power changes.

  In a state where the oscillator 1 and the STO 2 are synchronized, the control unit 6 causes a current to flow through the spin current injection layer 28 and slightly changes the frequency of the high-frequency power, thereby changing the phase of the high-frequency power. The difference between the maximum and minimum phase values that can be set by spin current injection is π. For example, the phase of the high-frequency power can be controlled in the range of −π / 2 to π / 2.

  In the present embodiment, the same effect as in the first embodiment can be obtained by applying a magnetic field to the non-oscillation layer 23 and injecting a spin current into the oscillation layer 25.

(Third embodiment)
A third embodiment will be described. In the present embodiment, the configuration of the connection unit 3 is changed with respect to the first embodiment, and the other parts are the same as those in the first embodiment. Therefore, only different parts from the first embodiment will be described.

  In the present embodiment, the connection unit 3 magnetically connects the oscillator 1 and the STO 2. Specifically, as shown in FIG. 5, the connection portion 3 includes a conductor portion 32, a wiring 33, and an insulating layer 34. The conductor portion 32 is made of a material having a high conductivity generally used as a wiring, such as Cu or Au. The conductor portion 32 has a plate shape, and is connected to the oscillator 1 via the wiring 33 at both ends in the longitudinal direction.

  An insulating layer 34 is laminated on the conductor portion 32, and a plurality of films constituting the STO 2 are laminated on the insulating layer 34. Thereby, the conductor part 31 is electrically insulated from STO2. A high-frequency current output from the oscillator 1 flows through the conductor portion 32, and a high-frequency magnetic field generated thereby is applied to the STO 2. In the present embodiment, when a current flows through the conductor portion 32, a magnetic field passing through the STO2 is generated in a direction perpendicular to both the stacking direction of the plurality of films constituting the STO2 and the direction in which the current flows in the conductor portion 32. . The oscillation layer 25 is resonated by the high frequency magnetic field, so that the oscillator 1 and the STO 2 are synchronized.

  In the present embodiment in which the oscillator 1 and the STO 2 are magnetically connected by applying a magnetic field generated by a current flowing through the conductor portion 32 to the STO 2, the phase of the high frequency power is changed as in the first embodiment. It is possible to control, and the same effect as the first embodiment can be obtained.

  Even in the present embodiment in which the oscillator 1 and the STO 2 are magnetically connected, the antenna 9 may be connected to the STO 2 and a high-frequency electromagnetic wave may be transmitted from the antenna 9. FIG. 6 is a diagram illustrating an example of a circuit when an antenna is connected to the STO 2 that is magnetically connected to the oscillator 1. As illustrated in FIG. 6, the separation circuit 8 includes an inductor 82 and a capacitor 83, and the inductor 82 is connected between the STO 2 and the control unit 6, and the STO 2 is connected to the antenna 9 via the capacitor 83. It is connected to the. With such a configuration, the direct current input to the STO 2 and the high frequency current output from the STO 2 are separated, and the direct current from the control unit 6 is suppressed from flowing into the antenna 9. And when the high frequency current which STO2 outputs flows into the antenna 9, a high frequency electromagnetic wave is transmitted.

(Fourth embodiment)
A fourth embodiment will be described. In the present embodiment, the number of STOs 2 is changed with respect to the third embodiment, and the others are the same as those in the third embodiment. Therefore, only the parts different from the third embodiment will be described.

  As shown in FIG. 7, the AC generator 100 of this embodiment includes a plurality of STOs 2. The plurality of STOs 2 are connected to the control unit 6 while being electrically insulated from each other. Further, the wiring 72 is arranged around each STO 2, and when a current flows through the wiring 72, a magnetic field is applied to the non-oscillation layer 23 of each STO 2.

  Also in this embodiment, the oscillator 1 and the STO 2 are synchronized as in the third embodiment. And it is possible to control the phase of high frequency electric power similarly to 1st Embodiment, and the effect similar to 1st Embodiment is acquired.

  The state in which the oscillator 1 and the STO 2 are synchronized is also a state in which a plurality of STOs 2 are synchronized. In this embodiment, high-frequency high-frequency power can be obtained by combining high-frequency power generated by the plurality of STOs 2 in this state.

  Also, in a configuration in which each slave is electrically connected to the master, the master power is consumed by each slave, so the power consumption of the master increases with the number of slaves. On the other hand, in the present embodiment in which the master oscillator 1 and the slave STO 2 are electrically isolated and magnetically connected, the power of the oscillator 1 is not consumed by the STO 2. An increase in power consumption can be suppressed.

  In addition, if it is set as the structure which changes the magnitude | size of the direct current and voltage which the control part 6 supplies to each STO2, individually adjusts the phase of the high frequency electric power which each STO2 generate | occur | produces, the alternating current generator 100 will be For example, it can be used as a phased array radar for vehicle-to-vehicle communication or road-to-vehicle communication. That is, the antenna 9 is connected to the STO 2 so that high-frequency electromagnetic waves are transmitted from the antenna 9, and further, the phases of the high-frequency power generated by each STO 2 are individually adjusted to be transmitted from the plurality of antennas 9 as a whole. The directivity of high-frequency electromagnetic waves can be controlled. Similarly, the AC generator 100 can be used as a phased array radar even when the phase controller 7 individually changes the magnetic field applied to each STO 2.

(Other embodiments)
In addition, this invention is not limited to above-described embodiment, In the range described in the claim, it can change suitably.

  For example, in the third embodiment, the lower electrode 21 is formed on the surface of the insulating layer 34 and the base layer 22 to the upper electrode 27 are stacked on the lower electrode 21, but the upper electrode 27 is formed on the surface of the insulating layer 34. The cap layer 26 to the lower electrode 21 may be stacked on the upper electrode 27.

  In the third embodiment, a plurality of films constituting the STO 2 are stacked on the insulating layer 34. However, the insulating layer 34 and the conductor portion 32 may be stacked on the STO 2. Moreover, you may arrange | position the conductor part 32 and the insulating layer 34 in the other position which can apply a magnetic field to STO2. Further, the STO 2 may not include the base layer 22 and the cap layer 26.

  In the first embodiment, the non-oscillation layer 23 has an easy axis in the plane direction and the oscillation layer 25 has an easy axis in the thickness direction. May have easy axes of magnetization in other directions. For example, the non-oscillation layer 23 may have an easy axis in the thickness direction, and the oscillation layer 25 may have an easy axis in the plane direction.

  In the second embodiment, the antenna 9 may be connected to the STO 2. In the third and fourth embodiments, the control unit 6 may inject a spin current into the oscillation layer 25. In the fourth embodiment, the connection unit 3 may electrically connect the oscillator 1 and each STO 2.

  The oscillator 1 and STO2 are easy to synchronize when m = 1 or n = 1, but f1 and f2 are adjusted so that m ≠ 1 and n ≠ 1, for example, f2 = f1 · 2/3. Also good.

  The AC current output from the oscillator 1, the AC magnetic field applied to the STO 2 by the output current of the oscillator 1, and the AC power output from the STO 2 may be an AC current, an AC magnetic field, and an AC power of less than 10 kHz.

1 Oscillator 2 STO
3 Connection unit 6 Control unit 7 Phase control unit

Claims (11)

An oscillator (1) that outputs an alternating current;
A magnetic oscillation element (2) for converting a direct current or a direct voltage into alternating current power;
A connection part (3) for electrically or magnetically connecting the oscillator and the magnetic oscillation element;
A first phase control unit (7) for controlling the phase of AC power generated by the magnetic oscillation element;
A second phase control unit (6) for controlling the phase of the AC power generated by the magnetic oscillation element by a method different from the first phase control unit,
An AC generator for synchronizing the oscillator and the magnetic oscillation element. The frequency of the alternating current output by the oscillator is f1,
When the frequency of the AC power generated by the magnetic oscillation element is f2,
The AC generator according to claim 1, wherein the frequency f2 is equal to any of f1 / 4, f1 / 3, f1 / 2, f1, 2f1, 3f1, and 4f1.   A DC current or a DC voltage is supplied to the magnetic oscillation element, and the frequency of the AC power generated by the magnetic oscillation element is adjusted by changing the magnitude of the DC current or the DC voltage, and the oscillator and the magnetic oscillation The AC generator according to claim 1, further comprising a frequency control unit (6) that synchronizes the elements.   4. The AC generator according to claim 1, further comprising: a frequency control unit that adjusts a frequency of an alternating current output from the oscillator and synchronizes the oscillator and the magnetic oscillation element. 5. The magnetic oscillation element includes an oscillation layer (25) that resonates with an alternating current output from the oscillator or an alternating magnetic field generated by the alternating current output from the oscillator, and a non-oscillation in which the magnetization direction changes when a magnetic field is applied. A layer (23), and an intermediate layer (24) disposed between the oscillation layer and the non-oscillation layer,
The first phase control unit changes a magnetization direction of the non-oscillation layer by applying a magnetic field to the non-oscillation layer, and changes a phase of AC power generated by the magnetic oscillation element. The alternating current generator as described in any one.   The said 2nd phase control part changes the phase of the alternating current power which the said magnetic oscillation element generate | occur | produces by changing the magnitude | size of the direct current or DC voltage supplied to the said magnetic oscillation element. The alternating current generator as described in one. The magnetic oscillation element includes an oscillation layer (25) that resonates with an alternating current output from the oscillator or an alternating magnetic field generated by the alternating current output from the oscillator, and a non-oscillation in which the magnetization direction changes when a magnetic field is applied. A layer (23), an intermediate layer (24) disposed between the oscillating layer and the non-oscillating layer, and disposed on a side opposite to the intermediate layer with respect to the oscillating layer; A spin current injection layer (28) for injecting a spin current into the oscillation layer,
The said 2nd phase control part inject | pours a spin current into the said oscillation layer by sending an electric current through the said spin current injection layer, and changes the phase of the alternating current power which the said magnetic oscillation element generate | occur | produces. The alternating current generator as described in any one.   The AC generator according to claim 1, comprising a plurality of the magnetic oscillation elements.   The AC generator according to any one of claims 1 to 8, wherein the connection portion includes a wiring (31) for electrically connecting the oscillator and the magnetic oscillation element.   The connection portion includes a conductor portion (32) that is electrically connected to the oscillator and is electrically insulated from the magnetic oscillation element, and is generated when an alternating current output from the oscillator flows through the conductor portion. The AC generator according to any one of claims 1 to 8, wherein the oscillator and the magnetic oscillation element are magnetically connected by applying an alternating magnetic field applied to the magnetic oscillation element. An insulating layer (34) formed on the surface of the conductor portion;
The AC generator according to claim 10, wherein the magnetic oscillation element is formed on a surface of the insulating layer.

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