JP2019021558A - Plasma generator and ion source - Google Patents

Abstract

To provide a plasma generator and an ion source which are arranged so that a gas is prevented from being leaked to suppress the occurrence of abnormal discharge, thereby increasing a plasma generation efficiency.SOLUTION: A plasma generator 1 comprises: a plasma generation chamber 10 having a first end face 10a with a first hole formed therein for introducing a material gas into the chamber; plasma-generation means for generating plasma in the plasma generation chamber 10; a gas pipe 40 having a second hole 40b as one opening in a second end face; and a capturing member 30 for capturing charged particles between the plasma generation chamber 10 and the gas pipe 40. The capturing member 30 includes: a third end face disposed on the same line as the plasma generation chamber 10, abutting against the first end face 10a, and having a third hole formed therein in communication with the first hole; and a fourth end face 30b abutting against the second end face and having a fourth hole formed therein in communication with the second hole 40b. The plasma generator further comprises a spring member 60 for applying a pressing force from the side of the gas pipe 40 in a direction perpendicular to the second end face and the fourth end face 30b.SELECTED DRAWING: Figure 4

Description

  The present invention relates to a plasma generation apparatus and an ion source.

  2. Description of the Related Art Conventionally, there has been known a plasma generation apparatus that is used to generate plasma inside and to use the generated plasma to etch, clean, or sputtering the surface of a substrate to be processed. As disclosed in Patent Document 1, the plasma generation apparatus introduces a source gas from a gas supply source into a plasma generation chamber via a gas pipe, and generates an induction electric field generated by supplying a high frequency from a high frequency power source. This is a device for generating plasma by ionizing a gas in a plasma generation chamber. A part of charged particles such as ions and electrons in the generated plasma may enter the gas pipe, and plasma may be generated in the gas pipe to cause abnormal discharge.

  In order to prevent abnormal discharge due to charged particles in the gas pipe, a capturing member that traps the charged particles is provided between the gas pipe and the plasma generation device. FIG. 8 shows a plasma generating apparatus provided with a general capturing member. FIG. 8A is a top view of the plasma generating apparatus, and FIG. 8B is a cross-sectional view taken along line B-B ′ of FIG. In FIG. 8B, hatching is not performed. As shown in the figure, the plasma generation apparatus 200 includes a plasma generation chamber 210, a plasma generation unit 220 that generates plasma in the plasma generation chamber 210, and a capturing member 230 that captures charged particles entering from the plasma generation chamber 210. And a connecting pipe 240 that connects the capturing member 230 and the plasma generation chamber 210.

  The capturing member 230 is disposed on the upstream side of the plasma generation chamber 210 and is connected to the plasma generation chamber 210 via a connection pipe 240. The inside of the capturing member 230 is formed in a maze shape, and captures charged particles generated in the plasma generation chamber 210 and entering from the connection pipe 240.

  In the plasma generation apparatus 200, the plasma generation chamber 210 and the connection pipe 240 are connected via a connection block 241. The connection block 241 includes a facing surface 241a that faces the bottom surface 210a of the plasma generation chamber 210, and the bottom surface 210a and the facing surface 241a come into contact with each other so that the plasma generation chamber 210 and the connection pipe 240 are connected. Therefore, the plasma generation chamber 210 and the connection pipe 240 are connected while maintaining airtightness.

JP 2017-85161 A

  However, the capture member 230 and the connection pipe 240 are connected by inserting one end of the connection pipe 240 into the hole of the capture member 230. By adopting such a connection method, the connection pipe 240 and the capture member 230 can be easily detached during the maintenance of the plasma generation chamber 210. On the other hand, the gas tightness is inferior, and gas may leak from the connection portion between the capturing member 230 and the connection pipe 240. When gas leaks from the connection portion between the capture member 230 and the connection pipe 240, there is a problem that abnormal discharge occurs and the efficiency of plasma generation in the plasma generation chamber 210 decreases. In addition, there is a problem that the parts in the abnormal discharge generating part are corroded. Similar devices are found elsewhere.

  The present invention has been made in view of the above circumstances, and by preventing the leakage of gas, the generation of abnormal discharge can be suppressed, the efficiency of plasma generation can be improved, and corrosion of parts can be prevented. And an ion source.

In order to achieve the above object, a plasma generation apparatus according to the present invention comprises:
A plasma generation chamber having a first end surface formed with a first hole for introducing a source gas into the interior thereof, in which plasma is generated;
Plasma generating means for generating plasma in the plasma generating chamber;
A gas pipe having a second end face, one opening opening in the second end face, and having a second hole to which the source gas is supplied from the other opening;
A third hole is formed between the plasma generation chamber and the gas pipe. The third hole is disposed on the same straight line as the plasma generation chamber, contacts the first end surface, and communicates with the first hole. 3 and a fourth end surface in contact with the second end surface and formed with a fourth hole communicating with the second hole, and enters the gas pipe from the plasma generation chamber. A capturing member that captures charged particles inside;
Pressing means for applying a pressing force from the side of the gas pipe in a direction perpendicular to the first end face and the third end face, or in a direction perpendicular to the second end face and the fourth end face.

The gas pipe includes a protruding portion that protrudes in a direction perpendicular to the axis of the gas pipe,
The pressing means may apply a pressing force to the protrusion.

The gas pipe includes a gas introduction block arranged to face the capturing member,
The gas introduction block may include the second end surface and the protrusion.

  The pressing means may be a spring member.

  The plasma generation chamber and the capturing member may be fixed by a fixing member.

  An ion source according to the present invention includes the above plasma generation apparatus and an extraction electrode that extracts ions in the plasma from the plasma generation chamber.

  According to the present invention, it is possible to provide a plasma generation apparatus and an ion source that can suppress the occurrence of abnormal discharge by preventing gas leakage, improve the efficiency of plasma generation, and prevent corrosion of components. .

It is a conceptual lineblock diagram of a plasma treatment apparatus provided with a plasma generating device concerning an embodiment of the invention. It is a figure which shows the plasma processing apparatus provided with the plasma production apparatus which concerns on embodiment of this invention, (a) is a top view, (b) is a sectional view in the A-A 'line of (a). It is an exploded view of the principal part of the plasma production apparatus concerning this embodiment. It is an enlarged view of the principal part of the plasma generator concerning this Embodiment. It is a figure which shows the modification of the plasma production apparatus which concerns on this Embodiment. It is a figure which shows the other modification of the plasma production apparatus which concerns on this Embodiment. It is a figure which shows the other modification of the plasma production apparatus which concerns on this Embodiment. It is a conceptual block diagram of the plasma processing apparatus provided with the conventional plasma production apparatus, (a) is a top view, (b) is a sectional view along the B-B 'line of (a).

  Embodiments of a plasma generation apparatus according to the present invention will be specifically described below with reference to the accompanying drawings. Note that the embodiments described below are for explanation, and do not limit the scope of the present invention. Accordingly, those skilled in the art can employ embodiments in which each or all of these elements are replaced with equivalent ones, and these embodiments are also included in the scope of the present invention.

(Embodiment)
Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  FIG. 1 is a schematic configuration diagram of a plasma processing apparatus 100 including a plasma generation apparatus 1 according to an embodiment of the present invention. The plasma processing apparatus 100 extracts ions from the plasma generated in the plasma generation apparatus 1, and performs etching or cleaning on the surface of the substrate W to be processed with the extracted ions. It is an apparatus for performing a sputtering process for irradiating a target to deposit and deposit sputtered particles on the substrate W to be processed.

  The plasma processing apparatus 100 includes a plasma generation apparatus 1 that generates plasma, a neutralizer 2, and a processing chamber 3. The plasma generator 1, the neutralizer 2, and the processing chamber 3 are disposed inside the vacuum chamber 4. The vacuum chamber 4 is depressurized to a predetermined pressure by a vacuum pump 5, and a substrate W to be processed is placed in the processing chamber 3.

  The plasma generation apparatus 1 includes a plasma generation chamber 10, plasma generation means 20 that generates plasma inside the plasma generation chamber 10, a capturing member 30 that captures charged particles that enter from the plasma generation chamber 10, and the plasma generation chamber 10. A gas pipe 40 for supplying the raw material gas, and a spring member 60 for applying a pressing force to the plasma generation chamber 10 side. An apparatus in which the extraction electrode 50 is attached to the plasma generation chamber 10 of the plasma generation apparatus 1 is referred to as an ion source. Details of the plasma generation chamber 10, the capture member 30, the gas pipe 40, and the spring member 60 will be described later.

  The plasma generating means 20 includes a high-frequency antenna 21, a high-frequency power source 22 that supplies power to the high-frequency antenna 21, and a matching circuit 23.

  The high frequency antenna 21 is wound around the outer periphery of the plasma generation chamber 10 and arranged in a coil shape. One end of the high frequency antenna 21 is connected to the matching circuit 23, and power is applied to the high frequency antenna 21 from the high frequency power supply 22 through the matching circuit 23. The other end of the high frequency antenna 21 is electrically grounded. The power supply frequency of the high frequency power supply 22 is, for example, 10 kHz to 100 MHz.

  The high frequency antenna 21 is applied with power from a high frequency power source 22 to generate an induction electric field in the plasma generation chamber 10, ionize the source gas introduced into the plasma generation chamber 10, and generate plasma. The plasma generation is stably maintained in the plasma generation chamber 10 by inductively coupling with the generated plasma.

  The capturing member 30 is attached to the first end surface 10 a that is the bottom surface of the plasma generation chamber 10, and prevents the plasma generated in the plasma generation chamber 10 from entering the gas pipe 40.

The gas pipe 40 is a pipe that supplies the source gas from the source gas source 41 to the plasma generation chamber 10. As the source gas, a fluorine-based gas such as CF4, SF6, C2F6 or the like is used. A gas such as Ar, O ₂ , N ₂ , or Xe may be used instead of the fluorine-based gas. In the embodiment, H ₂ is added to the fluorine gas. The gas pressure is, for example, 0.01 Pa to 10 Pa.

  The extraction electrode 50 is a grid electrode that extracts ions from the plasma generation chamber 10 where plasma is generated. The extraction electrode 50 is attached to the opening 10 b of the plasma generation chamber 10. As shown in FIGS. 1, 2, and 4, the extraction electrode 50 is a grid member in which a plurality of holes are formed in a disk-shaped member. The extraction electrode 50 is formed of a sputter resistant material such as molybdenum or graphite.

  The extraction electrode 50 includes a screen electrode 51 and an acceleration electrode 52. The screen electrode 51 is provided in the opening 10 b of the plasma generation chamber 10 and is disposed between the plasma generation chamber 10 and the acceleration electrode 52. The screen electrode 51 is connected to a DC power supply 55 that applies a positive voltage.

  The acceleration electrode 52 is connected to a DC power source 54 for applying a negative voltage. By setting the screen electrode 51 to a positive potential and the accelerating electrode 52 to a negative potential, the electric field generated between the electrodes extracts and accelerates only positive ions in the plasma in the emission direction. In the embodiment, the extraction electrode 50 including two electrodes is shown as an example. However, a deceleration electrode may be provided on the ion beam emission side of the acceleration electrode 52. There may be at least two electrodes.

  The neutralizer 2 is a device that is installed in the processing chamber 3 and emits electrons in order to neutralize the substrate W charged by ions extracted from the extraction electrode 50. By supplying electrons to the substrate W, charge of the substrate W is prevented from being charged.

  Next, the operation of the plasma processing apparatus 100 including the plasma generation apparatus 1 will be described with reference to FIG. 1 using an ion beam apparatus as an example.

  First, the vacuum pump 5 is operated to reduce the pressure in the vacuum chamber 4 to a predetermined pressure. Then, the source gas is supplied from the source gas source 41 to the plasma generation chamber 10 through the gas pipe 40 and the capturing member 30. On the other hand, a substrate W, which is an object to be processed, is placed in the processing chamber 3. Then, high frequency power is applied from the high frequency power supply 22 to the high frequency antenna 21 via the matching circuit 23. When high frequency power is applied to the high frequency antenna 21, the source gas introduced into the plasma generation chamber 10 is ionized, and plasma is generated in the plasma generation chamber 10.

  Of the plasma generated in the plasma generation chamber 10, ions are extracted by the extraction electrode 50 and accelerated, irradiated onto the substrate W as an ion beam, and a process such as an etching process is performed. The substrate W charged by ions is neutralized by electrons emitted from the neutralizer 2. The substrate W that has been subjected to the etching process is taken out of the processing chamber 3 and the process ends.

  Next, the main part of the plasma generation apparatus 1 will be described in detail with reference to FIGS. 2 to 4 are upside down with respect to FIG. 1, but are for explanation. In FIGS. 1 to 4, the plasma generation apparatus 1 may be disposed on the processing chamber 3. It may be placed below. 2A is a top view showing the plasma generator 1 and the neutralizer 2 used in the plasma generator 1, and FIG. 2B is a cross-sectional view taken along the line AA ′ in FIG. The cut surface is shown. The cut surface is not hatched. FIG. 3 is an exploded view of the plasma generation chamber 10, the capturing member 30, and the gas pipe 40. FIG. 4 is an enlarged view of a main part of the plasma generation apparatus 1.

  As shown in FIG. 2, the plasma generation apparatus 1 includes a plasma generation chamber 10, a plasma generation unit 20, a capturing member 30, a gas pipe 40, an extraction electrode 50, and a spring member 60. The plasma generation chamber 10, the capture member 30, and the gas pipe 40 are arranged in the order of the gas pipe 40, the capture member 30, and the plasma generation chamber 10 toward the downstream side of the gas flow supplied from the source gas source 41.

  The plasma generation chamber 10 is a cylindrical concave container made of a dielectric material such as quartz or aluminum oxide. A first end face 10 a is formed at the bottom of the recess of the plasma generation chamber 10. The first end face 10a is formed with a first hole 10c for introducing a source gas therein. A raw material gas is introduced into the plasma generation chamber 10 from the first hole 10 c, and the raw material gas introduced into the inside is converted into plasma by the plasma generation means 20.

  As shown in FIG. 4, the capture member 30 is a cylindrical member formed of an insulating material such as ceramic, and is disposed between the plasma generation chamber 10 and the gas pipe 40, and the charge generated in the plasma generation chamber 10. The particles are captured to prevent charged particles from entering the gas pipe 40. The capture member 30 is arranged on the same straight line as the plasma generation chamber 10, specifically, on the same axis. A plurality of plate-like members 30 e are attached to the inner wall of the capturing member 30 along the axial direction. The plurality of plate-like members 30e are formed so as to alternately extend from the opposed inner peripheral walls toward the axis, and are arranged so as to overlap each other in the vicinity of the axis. The plurality of plate-like members 30e are arranged in this manner, thereby forming a labyrinth-shaped passage inside the capturing member 30. When charged particles generated in the plasma generation chamber 10 enter the inside of the capturing member 30, they are captured by the plate-shaped member 30e in the process of passing through the labyrinth-shaped passage.

  As shown in FIG. 3, the capture member 30 includes a third end surface 30a and a fourth end surface 30b that form the upper surface and the lower surface of the cylindrical member. The third end face 30 a faces and contacts the first end face 10 a of the plasma generation chamber 10. A third hole 30c is formed at a position of the third end face 30a facing the first hole 10c formed in the first end face 10a. The fourth end face 30b faces the gas pipe 40, and a fourth hole 30d is formed. Note that the shape of the capturing member 30 is not limited to a cylindrical shape, and may be any shape including a third end surface 30a and a fourth end surface 30b, and a cylindrical member such as a quadrangular column can be used.

  The capturing member 30 and the plasma generation chamber 10 are fixed by a fixing member. Specifically, as shown in FIG. A bolt 31 is inserted into the hole penetrating in the axial direction of the capture member 30 from the fourth end face 30b and screwed into a thread groove (not shown) formed in the first end face 10a of the plasma generation chamber 10. And fix. By fixing in this way, the plasma generation chamber 10 and the capturing member 30 are integrated.

  Since the capture member 30 and the plasma generation chamber 10 are fixed by the bolt 31, the first end surface 10a and the third end surface 30a are in close contact with each other, and the contact portion between the first end surface 10a and the third end surface 30a. Therefore, gas can be prevented from leaking.

  The gas pipe 40 is a member that supplies the source gas from the source gas source 41 to the plasma generation chamber 10 via the capturing member 30. As shown in FIGS. 3 and 4, the gas pipe 40 includes a gas pipe main body 42 and a gas introduction block 43.

  The gas pipe main body 42 has one end connected to the source gas source 41 and the other end connected to the gas introduction block 43. The gas pipe main body 42 has a first through hole 42 a formed therein, and feeds the source gas accumulated in the source gas source 41 to the gas introduction block 43 through the first through hole 42 a.

  The gas introduction block 43 is a cylindrical member, and a second through hole 43a is formed therein. In addition, the gas introduction block 43 includes a disk-like protrusion 43 b that protrudes from the outer periphery of the gas introduction block 43 in the direction perpendicular to the axis. A second end surface 40 a is formed at one end of the gas introduction block 43, and the second end surface 40 a abuts against the fourth end surface 30 b of the capturing member 30. The other end of the gas introduction block 43 is connected to the gas pipe main body 42.

  As shown in FIGS. 3 and 4, one opening of the second through-hole 43 a opens in the second end surface 40 a. The opening is formed at a position facing the fourth hole 30 d of the capturing member 30. The other opening of the second through hole 43 a communicates with the first through hole 42 a of the gas pipe main body 42. The first through hole 42 a and the second through hole 43 a form a second hole 40 b that is a through hole of the gas pipe 40.

  The first hole 10c, the third hole 30c, and the fourth hole 30d are arranged coaxially and communicate with each other, and the source gas supplied from the source gas source 41 is supplied to the second hole 40b, the second hole 30d, and the fourth hole 30d. The four holes 30d, the third hole 30c, and the first hole 10c flow in this order and flow into the plasma generation chamber 10.

  As shown in FIG. 4, the extraction electrode 50 is supported by a pair of electrode holding members 56 with its outer peripheral portion being sandwiched from above and below. An electrode rod 57 is connected to the extraction electrode 50, and power is supplied to the extraction electrode 50 from the DC power sources 54 and 55 via the electrode rod 57.

  The spring member 60 is a pressing unit that applies a pressing force to the gas introduction block 43 toward the capturing member 30 and the plasma generation chamber 10. As shown in FIGS. 2 and 4, the spring member 60 is a member that presses the plate surface of the projecting portion 43 b toward the plasma generation chamber 10 with the force of F <b> 1, along the circumferential direction of the projecting portion 43 b, etc. A plurality are arranged at intervals. A pressing force in the axial direction is applied to the gas introduction block 43, the plasma generation chamber 10, and the capturing member 30 by pressing the plate surface of the protrusion 43 b by the spring member 60. The second end surface 40a of the gas pipe 40 and the fourth end surface 30b of the capturing member 30 are brought into close contact with each other by the spring member 60, thereby preventing gas from leaking.

  As shown in FIGS. 2 and 4, the plasma generating apparatus 1 further includes a base 11 to which the component parts are attached and a shielding cylinder 15 surrounding the attached component parts. The shielding cylinder 15 is made of a metal material surrounding the high-frequency antenna 21 and functions as a shield for electrostatically blocking a high-frequency electric field. One end of the shielding cylinder 15 is fixed to the base 11, and the other end includes an opening 15a for inserting a component.

  In the base 11, four holes 11 a for attaching a support rod 12 described later are formed at equal intervals so as to surround the outer periphery of the plasma generation chamber 10. In each of the four holes 11a, a thread groove for fixing the support rod 12 is formed. A recess 11b for receiving the gas introduction block 43 is formed at the center of the base 11, and an insertion hole 11c for inserting the spring member 60 is formed at the bottom of the recess 11b. The same number of insertion holes 11c as the number of spring members 60 to be inserted are formed. A hole 11d for attaching the electrode rod 57 and a hole 11e for attaching the high frequency antenna 21 are formed between the recess 11b and the hole 11a.

  The four support rods 12 are members that support the plasma generation chamber 10 and the capture member 30 in the shielding cylinder 15 and position the plasma generation chamber 10 and the capture member 30 in the axial direction. The four support rods 12 are inserted into the four holes 11 a of the base 11. A thread groove is formed at one end of the support rod 12 and is screwed into the thread grooves formed in the four holes 11 a of the base 11. Both end portions of the support rod 12 have a reduced diameter shape, and shoulder portions 12a and 12b are formed in the reduced diameter portion.

  The gas introduction block 43 is inserted into the recess 11 b of the base 11, and the fourth end face 30 b of the capture member 30 is brought into contact with the second end face 40 a of the gas introduction block 43, so that the plasma generation chamber 10 is captured. The member 30, the extraction electrode 50, and the electrode holding member 56 are accommodated in the shielding cylinder 15.

  The electrode rod 57 is inserted into the hole 11d of the base 11, the high frequency antenna 21 is inserted into the hole 11e, and the spring member 60 is inserted into the insertion hole 11c.

  Further, the positioning block 13 is disposed to face the electrode holding member 56, and the positioning block 13 is attached to the other end portion of the support rod 12. The positioning block 13 is formed in an annular shape, and four attachment holes 13a are formed at positions corresponding to the other end portions of the four support rods 12 along the circumferential direction. The support rod 12 is inserted into the four mounting holes 13 a of the positioning block 13, and the opposing surface of the positioning block 13 abuts on the shoulder portion 12 a of the support rod 12, thereby defining the position of the positioning block 13.

  The fixing plate 14 is brought into contact with the surface of the positioning block 13 opposite to the surface facing the electrode holding member 56. When the fixing plate 14 is brought into contact with the positioning block 13, a mounting hole 14 a is formed at a position corresponding to the mounting hole 13 a of the positioning block 13. The end of the support bar 12 protruding from the mounting hole 13a of the positioning block 13 passes through the mounting hole 14a of the fixing plate 14, and the tip of the support bar 12 is fastened by the nut 14b.

  Since the capturing member 30 made of an insulating material is directly fixed to the plasma generation chamber 10, corrosion can be prevented even when an unintended abnormal discharge occurs.

  A method for assembling such a plasma generation apparatus 1 will be described with reference to FIG.

  First, the shielding cylinder 15 is fixed to the base 11, and components are inserted and assembled from the opening 15 a of the shielding cylinder 15. The spring member 60 is inserted into the insertion hole 11c, the gas introduction block 43 is inserted into the recess 11b, and one end of the four support rods 12 is screwed into the four holes 11a. Further, the electrode rod 57 is inserted into the hole 11d, and the tip of the high frequency antenna 21 is inserted into the hole 11e. Note that the shielding cylinder 15 may be attached to the base 11 before the fixing plate 14 is attached.

  Next, the plasma generation chamber 10 integrated with the bolt 31, the capture member 30, and the electrode holding member 56 that holds the extraction electrode 50 are inserted into the shielding cylinder 15. The capturing member 30 and the plasma generation chamber 10 pass through the inside of the conducting wire wound by the high-frequency antenna 21, and the fourth end surface 30 b of the capturing member 30 and the second end surface 40 a of the gas introduction block 43 come into contact with each other. .

  Next, the other end of the support bar 12 is inserted into the mounting hole 13 a of the positioning block 13, and the positioning block 13 is attached to the support bar 12. The positioning block 13 and the electrode holding member 56 are fixed by a bolt (not shown). Then, the other end of the support bar 12 that has passed through the mounting hole 13a of the positioning block 13 is inserted into the mounting hole 14a of the fixed plate 14, and the tip of the support bar 12 protruding from the fixed plate 14 is fastened with a nut 14b.

  Thus, the plasma generation chamber 10 and the capturing member 30 are fixed inside the shielding cylinder 15 by the four support rods 12, the positioning block 13, and the fixing plate 14. At this time, the protrusion 43b is pushed by the spring member 60, so that a pressing force is applied in the direction of the plasma generation chamber 10 and the capturing member 30, and the applied pressing force is received by the positioning block 13 and the fixing plate 14. Adhesive force acts between the fourth end surface 30b of the capturing member 30 and the second end surface 40a of the gas introduction block 43, and gas is generated from between the fourth end surface 30b and the second end surface 40a. It can prevent leakage.

  When maintenance of the plasma generation chamber 10 and the capture member 30 is performed, the fixing plate 14 is removed by removing the nut 14b screwed to the support rod 12, and the positioning block 13 is lifted in the direction of the arrow X in the drawing. When the positioning block 13 is lifted in the X direction, the electrode holding member 56, the electrode rod 57, the extraction electrode 50, the plasma generation chamber 10, and the capturing member 30 fixed to the positioning block 13 can be pulled out as a unit. 4 are members that can be pulled out from the shielding cylinder 15 as a unit. Therefore, by taking out the extraction electrode 50, the plasma generation chamber 10, and the capturing member 30 together, maintenance of each member can be performed efficiently.

  According to the present embodiment, a pressing force is applied toward the plasma generation chamber 10 and the capturing member 30 by pressing the protrusion 43 b of the gas introduction block 43 with the spring member 60. Therefore, the close contact between the fourth end surface 30b of the capture member 30 and the second end surface 40a of the gas introduction block 43 is strengthened, and gas is prevented from leaking between the fourth end surface 30b and the second end surface 40a. To do. Therefore, the occurrence of abnormal discharge in the shielding cylinder 15 is prevented, and corrosion of components in the shielding cylinder 15 due to abnormal discharge is prevented.

  According to the present embodiment, since the gas introduction block 43 is attached to the gas piping main body 42 to transmit the pressing force, the pressing force can be easily applied only by attaching the gas introduction block 43 to the existing gas piping. it can. Even when the gas introduction block 43 is corroded, it can be easily replaced.

  According to the present embodiment, since the gas introduction block 43 is provided with the protrusion 43b and the protrusion 43b is pressed by the spring member 60, a pressing means having a simple structure can be provided.

  According to the present embodiment, the plasma generating apparatus including the spring member 60 can be used for the ion source. Therefore, it is possible to prevent gas leakage and abnormal discharge inside the plasma generating apparatus 1.

(Modification 1)
In the embodiment, it has been described that the plasma generation chamber 10 and the capture member 30 are integrated by the bolt 31 and the pressing force is applied to the protruding portion 43 b of the gas introduction block 43 by the spring member 60. The present invention is not limited to such a structure, and the combination of integrated members can be changed as appropriate. Depending on the combination of the integrated members, the pressing force from the side of the gas pipe 40 in the direction perpendicular to the first end surface 10a and the third end surface 30a or in the direction perpendicular to the second end surface 40a and the fourth end surface 30b. A combination of pressing means for providing the can be selected as appropriate.

  FIG. 5 shows an example in which the gas introduction block 43 of the gas pipe 40 and the capturing member 30 are integrated, and the plasma generation chamber 10 is separated. In order to fix the gas pipe 40 and the capture member 30, the plasma generation chamber 10 and the capture member 30 are fastened and fixed by, for example, bolts.

  According to this modification, the opposing surface of the gas introduction block 43 is pushed by the force of F2 by the spring member 60, so that the first end surface 10a of the plasma generation chamber 10 and the third end surface 30a of the capturing member 30 are Between the plasma generation chamber 10 and the capturing member 30 to prevent gas leakage. Further, the force F3 may be applied to the fourth end surface 30b of the capturing member 30 in the axial direction by a pressing means (not shown). Moreover, you may give the pressing force of both force F2 and force F3.

  Depending on the degree of adhesion between the first end surface 10a of the plasma generation chamber 10 and the third end surface 30a of the capturing member 30, or depending on the distance between the base 11 and the positioning block 13, the force F2 by the spring member 60 And a combination with the force F3 by other pressing means can be selected to adjust the entire pressing force.

(Modification 2)
FIG. 6 shows another modification. In this modification, the plasma generation chamber 10, the capturing member 30, and the gas introduction block 43 are separate bodies.

  According to this modification, the opposing surface of the gas introduction block 43 is pushed by the force F2 by the spring member 60, so that the first end surface 10a of the plasma generation chamber 10 and the third end surface 30a of the capturing member 30 are The gaps are in close contact with each other, and gas leakage at the joint surface between the plasma generation chamber 10 and the capturing member 30 is prevented. Similarly, the fourth end surface 30 b of the capturing member 30 and the second end surface 40 a of the gas introduction block 43 are in close contact with each other to prevent gas leakage at the joint surface between the capture member 30 and the gas introduction block 43. . In this modification, in addition to the force F2, the force F3 may be applied in the axial direction from the fourth end face 30b of the capturing member 30 by a pressing means (not shown).

  The degree of adhesion between the first end face 10 a of the plasma generation chamber 10 and the third end face 30 a of the capturing member 30; the degree of adhesion between the fourth end face 30 b of the capturing member 30 and the second end face 40 a of the gas introduction block 43; Alternatively, according to the distance between the base 11 and the positioning block 13, a combination of the force F2 by the spring member 60 and the force F3 by another pressing means can be selected to adjust the entire pressing force.

(Modification 3)
In the embodiment, the first modification, and the second modification, it has been described that the gas introduction block 43 includes the second end surface 40a and the protruding portion 43b. However, the second end surface 40a is formed on the protruding portion 43b. May be. As shown in FIG. 7, the gas introduction block 43 is formed with a protruding portion 43b protruding in the radial direction from one end portion of the cylindrical member. A second end surface 40a is formed on the surface of the protruding portion 43b facing the capturing member 30. A spring member 60 is disposed on the opposite side of the projecting portion 43b to the second end surface 40a. When the spring member 60 presses the protrusion 43b, the first end surface 10a and the third end surface 30a, and the fourth end surface 30b and the second end surface 40a are brought into close contact with each other. Note that the plasma generation chamber 10 and the capturing member 30 may be fixed by a fixing member.

  According to this modification, gas can be prevented from leaking from between the first end face 10a and the third end face 30a and from between the fourth end face 30b and the second end face 40a.

  According to this modification, since the second end face 40a is formed on the protrusion 43b of the gas introduction block 43, the height of the gas introduction block 43 can be reduced, and the height of the plasma generation apparatus 1 to which the gas introduction block 43 is attached can be increased. It can also be lowered. Further, the second end surface 40a and the fourth end surface 30b of the capturing member 30 are in contact with each other with a larger contact area than in the embodiment and the first and second modifications. Therefore, the degree of adhesion increases, and gas leakage can be prevented more effectively.

  In the present embodiment, it has been described that the capturing member 30 includes the plate-shaped member 30e that forms a labyrinth-shaped passage, but the present invention is not limited to the capturing member 30 that forms a labyrinth-shaped passage. For example, a plurality of spherical members may be sealed inside the capturing member 30 and charged particles may be captured on the surface of the spherical member.

  In the present embodiment, as a method of fixing the capturing member 30 and the plasma generation chamber 10, it has been described that the bolt 31 is fixed through the capturing member 30, but the present invention is not limited to such a fixing method. For example, the first end surface 10a of the plasma generation chamber 10 and the third end surface 30a or the outer periphery of the capturing member 30 may be fixed by being screwed and screwed together.

  In the present embodiment, it has been described that the protrusion 43b has a disk shape, but it is sufficient that the protrusion 43b protrudes perpendicularly to the axial direction of the gas introduction block 43, and a rod-like protrusion that protrudes perpendicularly from the axis of the gas introduction block 43. It may be.

  In the present embodiment, a gas introduction block 43, which is a separate member from the gas pipe main body 42, is brought into contact with the capturing member 30. In the present invention, the diameter of the gas pipe 40 may be increased and the one end of the gas pipe 40 may be brought into direct contact with the capturing member 30 without providing the separate gas introduction block 43. In that case, a member corresponding to the ring-shaped or rod-shaped protrusion 43 b can be attached to the outer periphery of the gas pipe 40.

  In the present embodiment, it has been described that the spring member 60 is used as the pressing unit. However, the pressing unit of the present invention is not limited to the spring member 60. For example, an elastic member such as rubber may be used.

  In the present embodiment, the example in which the high-frequency antenna 21 is used as the plasma generating unit 20 has been described, but the present invention is not limited to such a plasma generating unit 20. The present invention can also be applied to plasma generating means using microwaves, plasma generating means using direct current, and the like.

  In this embodiment, the ion beam apparatus using the ion source has been described as an example of the plasma processing apparatus. However, the plasma processing apparatus using the plasma generation apparatus of the present invention is limited to the case of being used in the ion beam apparatus. However, the present invention can be applied to a plasma processing apparatus such as a plasma CVD apparatus or a plasma etching apparatus.

  The present invention can be used for a plasma generating apparatus and an ion source provided with pressing means.

DESCRIPTION OF SYMBOLS 1 Plasma generator 2 Neutralizer 3 Processing chamber 4 Vacuum chamber 5 Vacuum pump 10 Plasma generation chamber 10a 1st end surface 10b Opening part 10c 1st hole 11 Base 11a, 11d, 11e Hole 11c Insertion hole 11b Recessed part 12 Support Rod 12a, 12b Shoulder part 13 Positioning block 13a Mounting hole 14 Fixing plate 14a Mounting hole 14b Nut 15 Shielding cylinder 15a Opening part 20 Plasma generating means 21 High frequency antenna 22 High frequency power supply 23 Matching circuit 30 Capture member 30a Third end face 30b 4th End face 30c third hole 30d fourth hole 30e plate member 31 bolt 40 gas pipe 40a second end face 40b second hole 41 source gas source 42 gas pipe body 42a first through hole 43 gas introduction block 43a Second through hole 43b Protruding portion 50 Extraction electrode DESCRIPTION OF SYMBOLS 1 Screen electrode 52 Acceleration electrode 54,55 DC power supply 56 Electrode holding member 57 Electrode rod 60 Spring member 100 Plasma processing apparatus 200 Plasma generation apparatus 210 Plasma generation chamber 210a Bottom surface 220 Plasma generation means 230 Capture member 240 Connection piping 241 Connection block 241a Opposite surface

Claims (6)

A plasma generation chamber having a first end surface formed with a first hole for introducing a source gas into the interior thereof, in which plasma is generated;
Plasma generating means for generating plasma in the plasma generating chamber;
A gas pipe having a second end face, one opening opening in the second end face, and having a second hole to which the source gas is supplied from the other opening;
A third hole is formed between the plasma generation chamber and the gas pipe. The third hole is disposed on the same straight line as the plasma generation chamber, contacts the first end surface, and communicates with the first hole. 3 and a fourth end surface in contact with the second end surface and formed with a fourth hole communicating with the second hole, and enters the gas pipe from the plasma generation chamber. A capturing member that captures charged particles inside;
Pressing means for applying a pressing force from the side of the gas pipe in a direction perpendicular to the first end surface and the third end surface or in a direction perpendicular to the second end surface and the fourth end surface;
Plasma generator. The gas pipe includes a protruding portion that protrudes in a direction perpendicular to the axis of the gas pipe,
The pressing means applies a pressing force to the protruding portion;
The plasma generation apparatus according to claim 1. The gas pipe includes a gas introduction block arranged to face the capturing member,
The gas introduction block includes the second end surface and the protrusion.
The plasma generation apparatus according to claim 2. The pressing means is a spring member.
The plasma generation apparatus of any one of Claim 1 to 3. The plasma generation chamber and the capturing member are fixed by a fixing member,
The plasma generating apparatus of any one of Claim 1 to 4. A plasma generating apparatus according to any one of claims 1 to 5;
An extraction electrode for extracting ions in the plasma from the plasma generation chamber,
Ion source.

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