JP2018529297A - 色フィルタセンサー - Google Patents

色フィルタセンサー Download PDF

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Publication number
JP2018529297A
JP2018529297A JP2018515145A JP2018515145A JP2018529297A JP 2018529297 A JP2018529297 A JP 2018529297A JP 2018515145 A JP2018515145 A JP 2018515145A JP 2018515145 A JP2018515145 A JP 2018515145A JP 2018529297 A JP2018529297 A JP 2018529297A
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JP
Japan
Prior art keywords
filter
sensor
width dimension
array
dimension
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2018515145A
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English (en)
Japanese (ja)
Inventor
ゴマ、セルジュ・ラドゥ
アタナソフ、カリン・ミトコフ
シッディクイ、ハシブ・アーメド
セイ、ビエイ−チェン
ゲオルギエフ、トドル・ゲオルギエフ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of JP2018529297A publication Critical patent/JP2018529297A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)
  • Optical Filters (AREA)
JP2018515145A 2015-09-22 2016-08-23 色フィルタセンサー Pending JP2018529297A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/861,678 2015-09-22
US14/861,678 US20170084650A1 (en) 2015-09-22 2015-09-22 Color filter sensors
PCT/US2016/048190 WO2017052898A1 (en) 2015-09-22 2016-08-23 Color filter sensors

Publications (1)

Publication Number Publication Date
JP2018529297A true JP2018529297A (ja) 2018-10-04

Family

ID=56943911

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018515145A Pending JP2018529297A (ja) 2015-09-22 2016-08-23 色フィルタセンサー

Country Status (10)

Country Link
US (1) US20170084650A1 (de)
EP (1) EP3353808B1 (de)
JP (1) JP2018529297A (de)
KR (1) KR20180058754A (de)
CN (1) CN108701699B (de)
CA (1) CA2996199A1 (de)
ES (1) ES2787129T3 (de)
HU (1) HUE047696T2 (de)
TW (1) TW201721852A (de)
WO (1) WO2017052898A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9681109B2 (en) * 2015-08-20 2017-06-13 Qualcomm Incorporated Systems and methods for configurable demodulation
KR102666282B1 (ko) * 2017-12-12 2024-05-14 르파운드리 에스.알.엘. 가시광선 및 자외선 검출을 위한 반도체 광학 센서 및 그 제조 공정
CN109584714B (zh) * 2018-11-30 2021-04-16 Oppo广东移动通信有限公司 显示屏与电子设备

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4388640A (en) * 1980-02-04 1983-06-14 Rca Corporation Color filter having vertical color stripes with a nonintegral relationship to CCD photosensors
US4277801A (en) * 1980-02-04 1981-07-07 Rca Corporation Color filter having vertical color stripes with a nonintegral relationship to CCD photosensors
JP4500434B2 (ja) * 2000-11-28 2010-07-14 キヤノン株式会社 撮像装置及び撮像システム、並びに撮像方法
KR100720522B1 (ko) * 2005-12-28 2007-05-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
US7675080B2 (en) * 2006-01-10 2010-03-09 Aptina Imaging Corp. Uniform color filter arrays in a moat
US7768569B2 (en) * 2006-08-17 2010-08-03 Altasens, Inc. High sensitivity color filter array
JP4480740B2 (ja) * 2007-07-03 2010-06-16 シャープ株式会社 固体撮像素子およびその製造方法、電子情報機器
US8084739B2 (en) * 2008-07-16 2011-12-27 Infrared Newco., Inc. Imaging apparatus and methods
KR20100090971A (ko) * 2009-02-09 2010-08-18 삼성전자주식회사 후면 수광 이미지 센서 및 이의 제조 방법
EP2473826B1 (de) * 2009-09-01 2017-10-11 Philips Lighting Holding B.V. Farbsensor mit hoher spektralauflösung mit nicht-dispersiven elementen
RU2548166C1 (ru) * 2011-12-28 2015-04-20 Фуджифилм Корпорэйшн Устройство обработки изображений, способ и устройство формирования изображения
US9627434B2 (en) * 2013-01-04 2017-04-18 California Institute Of Technology System and method for color imaging with integrated plasmonic color filters
JP2015065270A (ja) * 2013-09-25 2015-04-09 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
CN106575035B (zh) * 2014-06-25 2020-09-11 技术创新动力基金（以色列）有限合伙公司 用于光场成像的系统和方法

Also Published As

Publication number Publication date
EP3353808A1 (de) 2018-08-01
CN108701699A (zh) 2018-10-23
CA2996199A1 (en) 2017-03-30
US20170084650A1 (en) 2017-03-23
WO2017052898A1 (en) 2017-03-30
TW201721852A (zh) 2017-06-16
ES2787129T3 (es) 2020-10-14
CN108701699B (zh) 2022-09-02
WO2017052898A9 (en) 2018-05-03
HUE047696T2 (hu) 2020-05-28
KR20180058754A (ko) 2018-06-01
EP3353808B1 (de) 2020-01-29

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Effective date: 20180522