JP2018206589A - Scanning electron microscope - Google Patents

Abstract

To provide a scanning electron microscope capable of reducing vibration of a semiconductor detector.SOLUTION: A scanning electron microscope 100 includes an electron source, an objective lens 6 for focusing an electron beam emitted from the electron source and irradiating a sample with the electron beam, a semiconductor detector 102 for detecting radiation generated by irradiating the sample with the electron beam, a detector support member supporting the semiconductor detector 102, a first member (probe 110) supported by the detector support member and having an elastic portion, a moving mechanism for moving the semiconductor detector 102 between the detection position for detecting the radiation and the retreat position deviating from the detection position via the detector support member, and a second member (plate 120) with which the first member (probe 110) is in contact when the semiconductor detector 102 is located at the detection position.SELECTED DRAWING: Figure 10

Description

  The present invention relates to a scanning electron microscope.

  The backscattered electron detector mounted on the scanning electron microscope detects backscattered electrons generated by irradiating the sample with an electron beam. Since the amount of emitted electrons increases as the atomic number increases, the composition information of the sample can be obtained from the reflected electron image obtained by detecting the reflected electrons with the reflected electron detector.

  In Patent Document 1, when a reflected electron image is observed, a reflected electron detector (semiconductor detector) is arranged on the optical axis immediately below the objective lens, and when a reflected electron image is not observed, the reflected electron detector is arranged. There is disclosed a scanning electron microscope configured to be able to be placed at a retracted position off the optical axis. Specifically, the backscattered electron detector is supported by a moving support, and the backscattered electron detector is placed on the optical axis by operating the moving support with a drive mechanism disposed outside the scanning electron microscope column. It is moved between the retracted position.

JP 9-35679 A

  However, when the backscattered electron detector is supported by a moving support having a long stroke as in Patent Document 1, vibration from the outside is easily transmitted to the backscattered electron detector.

  When the objective lens leaks an electric field or a magnetic field from the lower surface of the objective lens, if the backscattered electron detector arranged immediately below the objective lens vibrates, it causes a disturbance of the leakage electric field or the leakage magnetic field. For example, when the leakage electric field is disturbed, the trajectory of the primary beam (electron beam) that passes through the objective lens and irradiates the sample fluctuates, and as a result, the scanning electron microscope image appears as disturbance (noise).

  The present invention has been made in view of the above problems, and one of the objects according to some aspects of the present invention is to provide a scanning electron microscope that can reduce vibration of a semiconductor detector. is there.

The scanning electron microscope according to the present invention is:
An electron source,
An objective lens that focuses the electron beam emitted from the electron source and irradiates the sample;
A semiconductor detector for detecting radiation generated by irradiating the sample with an electron beam;
A detector support member supporting the semiconductor detector;
A first member supported by the detector support member and having an elastic portion;
A movement mechanism for moving the semiconductor detector between a detection position for detecting radiation and a retracted position deviating from the detection position via the detector support member;
A second member that contacts the first member when the semiconductor detector is located at the detection position;
including.

  In such a scanning electron microscope, when the semiconductor detector is located at the detection position, the first member provided in the semiconductor detector contacts the second member, so the vibration of the semiconductor detector due to external vibrations. Can be reduced. Therefore, noise in the scanning electron microscope image can be reduced.

The figure which shows the structure of the scanning electron microscope which concerns on this embodiment. The figure for demonstrating the mode of the movement of the reflection electron detector by a moving mechanism. The figure for demonstrating the mode of the movement of the backscattered electron detector by a moving mechanism. The top view which shows a backscattered electron detector and a probe typically. The side view which shows a backscattered electron detector and a probe typically. Sectional drawing which shows a probe typically. The side view which shows a plate and a plate support member typically. The side view which shows a plate and a plate support member typically. The perspective view which shows a plate and a plate support member typically. The side view which shows a mode that the probe is contacting the plate typically. Sectional drawing which shows a mode that the probe is contacting the plate. The side view which shows typically the vicinity of the objective lens of the scanning electron microscope which concerns on a 1st modification. Sectional drawing which shows typically the vicinity of the objective lens of the scanning electron microscope which concerns on a 1st modification. The side view which shows typically the vicinity of the objective lens of the scanning electron microscope which concerns on a 2nd modification. Sectional drawing which shows typically the vicinity of the objective lens of the scanning electron microscope which concerns on a 2nd modification.

  DESCRIPTION OF EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. The embodiments described below do not unduly limit the contents of the present invention described in the claims. In addition, not all of the configurations described below are essential constituent requirements of the present invention.

  Hereinafter, an example in which the semiconductor detector included in the scanning electron microscope according to the present invention is a detector that detects reflected electrons generated by irradiating the sample with an electron beam will be described. It is not limited to the detector to detect. For example, the semiconductor detector may be a detector that detects secondary electrons generated by irradiating the sample with an electron beam. The semiconductor detector may be a detector that detects X-rays generated by irradiating the sample with an electron beam. Radiation includes electrons (secondary electrons and reflected electrons) and X-rays.

1. Scanning Electron Microscope First, a scanning electron microscope according to this embodiment will be described with reference to the drawings. FIG. 1 is a diagram illustrating a configuration of a scanning electron microscope 100 according to the present embodiment. In FIG. 1, each part constituting the scanning electron microscope 100 is illustrated in a simplified manner.

  The scanning electron microscope 100 can detect and image the electrons (secondary electrons and reflected electrons) emitted from the irradiation point of the electron probe when the surface of the sample S is scanned with the electron probe. As a result, the scanning electron microscope 100 can obtain a scanning electron microscope image (secondary electron image and reflected electron image).

As shown in FIG. 1, the scanning electron microscope 100 includes an electron source 2, a condenser lens 4, a deflector 5, an objective lens 6, a sample stage 7, a secondary electron detector 8, and a backscattered electron detector. 10 are included. The scanning electron microscope 100 further includes a probe 110 (first member), a plate 120 (second member), and a plate support member 130 (support member) described later (see FIGS. 2 and 3).

  The electron source 2 emits an electron beam. The electron source 2 is, for example, a known electron gun. The electron beam travels along the optical axis OA.

  The condenser lens 4 focuses the electron beam emitted from the electron source 2. For example, a plurality (two in the illustrated example) of the condenser lenses 4 are arranged along the optical axis OA.

  The deflector 5 deflects the electron beam (electron probe) focused by the condenser lens 4 and the objective lens 6. The deflector 5 is used for scanning the sample S with an electron probe.

  The objective lens 6 focuses the electron beam emitted from the electron source 2 and irradiates the sample S. The objective lens 6 is a lens for forming an electron probe disposed immediately before the sample S. The objective lens 6 generates, for example, a magnetic field and an electric field, and forms an electron probe by superimposing the magnetic field and the electric field. In the scanning electron microscope 100, the objective lens 6 is of a type in which an electric field leaks from the objective lens. The leakage electric field of the objective lens 6 is formed in the vicinity of the sample S.

  The scanning electron microscope 100 may include a lens, a diaphragm, and the like in addition to the optical system described above.

  A sample S is placed on the sample stage 7. The sample stage 7 supports the sample S and can move the sample S. The sample stage 7 has a drive mechanism for moving the sample S.

  The secondary electron detector 8 detects secondary electrons generated from the sample S when the sample S is irradiated with the electron beam. In the illustrated example, the secondary electron detector 8 is disposed below the objective lens 6 (on the sample stage 7 side). The position of the secondary electron detector 8 is not particularly limited, and may be disposed above the objective lens 6 (on the electron source 2 side). In the scanning electron microscope 100, a secondary electron image is generated based on the output signal of the secondary electron detector 8.

  The reflected electron detector 10 detects reflected electrons generated from the sample S when the sample S is irradiated with the electron beam. In the scanning electron microscope 100, a reflected electron image is generated based on the output signal of the reflected electron detector 10.

  The backscattered electron detector 10 is supported by a detector support member 12. The detector support member 12 can be operated by a moving mechanism 14 disposed outside the sample chamber 13. The detector support member 12 is a rod-shaped member, and the backscattered electron detector 10 is attached to the tip thereof. The moving mechanism 14 moves the backscattered electron detector 10 between a detection position on the optical axis OA that detects the backscattered electrons and a retracted position that deviates from the detection position (on the optical axis OA). The moving mechanism 14 moves the backscattered electron detector 10 in a direction orthogonal to the optical axis OA via the detector support member 12. The moving mechanism 14 may be configured to move the backscattered electron detector 10 via the detector support member 12 by driving a motor or the like. Alternatively, the backscattered electron detector manually via the detector support member 12. 10 may be configured to move.

  2 and 3 are views for explaining the movement of the backscattered electron detector 10 by the moving mechanism 14. FIG. 2 illustrates a state in which the backscattered electron detector 10 is disposed at the detection position. FIG. 3 illustrates a state in which the backscattered electron detector 10 is disposed at the retracted position.

  The detection position is a position where the reflected electrons emitted from the sample S can be detected. In the illustrated example, the detection position is below the objective lens 6 (on the sample stage 7 side). That is, the detection position is between the objective lens 6 and the sample stage 7 (sample S). When the backscattered electron detector 10 is positioned at the detection position, the backscattered electron detector 10 is positioned in the leakage electric field of the objective lens 6.

  The retreat position is a position deviated from the detection position (optical axis OA). By moving the backscattered electron detector 10 to the retracted position, the backscattered electron detector 10 does not interfere with observation or analysis.

  In this embodiment, when the backscattered electron detector 10 is disposed at the detection position (see FIG. 2), the probe 110 provided in the backscattered electron detector 10 is placed on the plate 120 disposed on the side of the objective lens 6. Pressed and touched.

  FIG. 4 is a plan view (top view) schematically showing the backscattered electron detector 10 and the probe 110. FIG. 5 is a side view schematically showing the backscattered electron detector 10 and the probe 110.

  As shown in FIGS. 4 and 5, the reflected electron detector 10 includes a semiconductor detector 102, a detector mounting base 104, and a connection member 106.

  The semiconductor detector 102 is supported by the detector support member 12. The semiconductor detector 102 has, for example, an annular detection region. In the center of the annular detection region, a hole 101 for allowing the electron beam applied to the sample S to pass therethrough is provided. The semiconductor detector 102 is a detector using a PN junction. When electrons (reflected electrons) enter the semiconductor detector 102, the semiconductor detector 102 outputs an electric signal having an intensity corresponding to the incident electrons. The electrical signal output from the semiconductor detector 102 passes through a wiring (not shown) in the detector support member 12 via the terminal 105 and passes to a signal processing device (not shown) outside the sample chamber 13. Sent. In the signal processing device, amplification of an electric signal, analog-digital conversion, and the like are performed.

  The semiconductor detector 102 is attached to the detector mounting base 104. The detector mounting base 104 is screwed (fixed) to the connecting member 106 with a screw 103.

  The connection member 106 is a member for connecting the detector support member 12 and the semiconductor detector 102. The connection member 106 further connects the detector support member 12 and the probe 110.

  The probe 110 is supported by the detector support member 12. The probe 110 is provided in the backscattered electron detector 10. Specifically, the probe 110 is sandwiched and fixed between the probe base 107 and the probe fixing plate 108. The probe base 107 is screwed (fixed) to the connection member 106 with a screw 109a. The probe base 107 and the probe fixing plate 108 are screwed (fixed) with screws 109b.

  A plurality of probes 110 are provided. In the illustrated example, two probes 110 are provided, but the number is not particularly limited. One probe 110 may be provided in the backscattered electron detector 10.

  FIG. 6 is a cross-sectional view schematically showing the probe 110.

  As shown in FIG. 6, the probe 110 includes a housing 112, a pin 114 (contactor), and a coil spring 116 (elastic portion).

The shape of the housing 112 is, for example, a cylindrical shape. In the housing 112, there is a coil spring 1
16 is housed.

  The pin 114 protrudes from one end of the housing 112. The pin 114 is connected to the coil spring 116.

  The coil spring 116 is accommodated in the housing 112. The coil spring 116 biases the pin 114 in the protruding direction of the pin 114. The coil spring 116 is a compression spring. In addition, the member (elastic part) for urging the pin 114 in the protruding direction is not limited to the coil spring 116 (compression spring), and other elastic members may be used.

  In the probe 110, since the pin 114 is urged in the protruding direction by the coil spring 116, the pin 114 can be stably brought into contact with the plate 120.

  The probe 110 is, for example, a spring probe (contact probe). The spring probe (contact probe) is a probe used to make electrical connection by contacting a printed circuit board or electronic component when inspecting the printed circuit board or electronic component.

  7 and 8 are side views schematically showing the plate 120 and the plate support member 130. FIG. 7 and 8 are different from each other in the direction in which the plate 120 and the plate support member 130 are viewed.

  As shown in FIGS. 7 and 8, the plate 120 is disposed on the side of the objective lens 6. The plate 120 is supported by a plate support member 130. The plate 120 is not in contact with the objective lens 6. The plate 120 is a plate-like member, for example. The plate 120 has a contact surface 122 against which the probe 110 (pin 114) is pressed. The plate 120 is disposed at a position where the probe 110 is pressed against and contacts the contact surface 122 when the backscattered electron detector 10 is disposed at the detection position.

  FIG. 9 is a perspective view schematically showing the plate 120 and the plate support member 130.

  The plate support member 130 includes a pedestal 132 and a support plate 134. The pedestal 132 is fixed to the objective lens flange 60. The support plate 134 is fixed to the pedestal 132. That is, the support plate 134 is fixed to the objective lens flange 60 via the pedestal 132. The support plate 134 is a plate-like member and extends from the pedestal 132 fixed to the objective lens flange 60 to the lower part of the objective lens 6. One end of the support plate 134 is connected to the pedestal 132, and the other end is connected to the plate 120.

  The plate support member 130 is configured to be able to adjust the position of the plate 120. In the illustrated example, a screw hole 136 for fixing (screwing) the support plate 134 formed on the pedestal 132 is a long hole. Therefore, the mounting position of the support plate 134 with respect to the pedestal 132 can be adjusted, and the position of the plate 120 can be adjusted by adjusting the mounting position of the support plate 134.

  FIG. 10 is a side view schematically showing how the probe 110 is in contact with the plate 120. FIG. 11 is a cross-sectional view schematically showing how the probe 110 is in contact with the plate 120. In FIG. 11, only the probe 110 and the plate 120 are shown for convenience.

When the semiconductor detector 102 (backscattered electron detector 10) moves from the retracted position to the detection position, the pins 114 of the probe 110 are pressed against and contact the contact surface 122 of the plate 120. When the pin 114 is pressed against the contact surface 122 and the pin 114 contacts the contact surface 122, the coil spring 116 is compressed and an elastic force is generated in the coil spring 116. The pin 114 can be stably brought into contact with the contact surface 122 by this elastic force. As described above, the pins 114 elastically contact the contact surface 122, and thus the vibration of the semiconductor detector 102 due to the external vibration transmitted through the detector support member 12 can be reduced.

  Further, when the semiconductor detector 102 is arranged at the detection position, it may be necessary to finely adjust the detection position of the semiconductor detector 102 so that the electron beam passes through the hole 101 for allowing the electron beam to pass therethrough. . In the probe 110, since the pin 114 is elastically in contact with the contact surface 122, it can cope with fine adjustment of the detection position of the semiconductor detector 102. That is, even when the detection position of the semiconductor detector 102 is finely adjusted, the pin 114 can be stably brought into contact with the contact surface 122.

2. Operation of Scanning Electron Microscope Next, the operation of the scanning electron microscope 100 will be described.

  In the scanning electron microscope 100, when the reflected electron image is acquired, the semiconductor detector 102 is moved to the detection position by the moving mechanism 14 via the detector support member 12 (see FIG. 2). At this time, the pin 114 of the probe 110 is pressed against and contacts the plate 120 disposed on the side of the objective lens 6 (see FIGS. 10 and 11). Thereby, since the pin 114 elastically contacts the plate 120, vibration of the semiconductor detector 102 due to external vibration can be reduced.

  The electron beam emitted from the electron source 2 is focused by the condenser lens 4 and the objective lens 6, and the focused electron beam (electron beam) passes through the hole 101 of the reflected electron detector 10 and is irradiated on the sample S. . The reflected electrons generated by irradiating the sample S with the electron beam are detected by the reflected electron detector 10 (semiconductor detector 102). By scanning the electron beam on the sample S with the deflector 5 and detecting the reflected electrons generated from each point on the sample S with the reflected electron detector 10, a reflected electron image can be obtained.

  In the scanning electron microscope 100, when the secondary electron image is acquired, the semiconductor detector 102 is moved from the detection position to the retracted position by the moving mechanism 14 via the detector support member 12 (see FIG. 3). Thereby, the semiconductor detector 102 does not disturb the detection of the secondary electrons by the secondary electron detector 8.

  The electron beam emitted from the electron source 2 is focused by the condenser lens 4 and the objective lens 6, and the focused electron beam (electron beam) is applied to the sample S. Secondary electrons generated when the sample S is irradiated with the electron beam are detected by the secondary electron detector 8. By scanning the electron beam on the sample S with the deflector 5 and detecting secondary electrons generated from each point on the sample S with the secondary electron detector 8, a secondary electron image can be obtained.

  The scanning electron microscope 100 according to the present embodiment has the following features, for example.

  The scanning electron microscope 100 includes a probe 110 that is supported by the detector support member 12 and includes a coil spring 116, and a plate 120 that contacts the probe 110 when the semiconductor detector 102 is positioned at the detection position. Therefore, in the scanning electron microscope 100, the vibration of the semiconductor detector 102 due to the external vibration transmitted through the detector support member 12 can be reduced.

  When the semiconductor detector 102 vibrates, the electric field (leakage electric field) leaking from the objective lens 6 is disturbed, the trajectory of the electron beam (primary beam) irradiated to the sample S fluctuates, and noise is included in the scanning electron microscope image. There is. In the scanning electron microscope 100, since the vibration of the semiconductor detector 102 can be reduced as described above, the disturbance of the leakage electric field can be reduced, and as a result, the noise of the scanning electron microscope image can be reduced. This embodiment is particularly effective in observation at a low acceleration voltage that is greatly affected by the disturbance of the leakage electric field.

  In the scanning electron microscope 100, the probe 110 has a coil spring 116 that is a compression spring and a pin 114 connected to the coil spring 116. When the semiconductor detector 102 is located at the detection position, the pin 114 is Contact plate 120. Therefore, in the scanning electron microscope 100, the vibration of the semiconductor detector 102 due to the external vibration transmitted through the detector support member 12 can be reduced.

  In the scanning electron microscope 100, a plurality of probes 110 are provided. Therefore, in the scanning electron microscope 100, the vibration of the semiconductor detector 102 can be reduced as compared with the case where one probe 110 is provided.

  In the scanning electron microscope 100, the plate support member 130 supports the plate 120 so that the plate 120 is positioned on the side of the objective lens 6. Furthermore, the plate support member 130 is configured to be able to adjust the position of the plate 120. Therefore, in the scanning electron microscope 100, the plate 120 can be disposed at an appropriate position, and the pin 114 and the contact surface 122 can be brought into contact at a desired position. Since the elastic force generated in the coil spring 116 changes depending on the position where the pin 114 and the contact surface 122 are in contact with each other, the elastic force generated in the coil spring 116 can be adjusted by adjusting the position of the plate 120.

  In the scanning electron microscope 100, the objective lens 6 generates a leakage electric field, and when the semiconductor detector 102 is located at the detection position, the semiconductor detector 102 is located in the leakage electric field of the objective lens 6. In the scanning electron microscope 100, since the vibration of the semiconductor detector 102 can be reduced, the noise of the scanning electron microscope image generated when the semiconductor detector 102 vibrates in the leakage electric field can be reduced.

  In the above description, the objective lens 6 generates a leakage electric field. However, the objective lens 6 may generate a leakage magnetic field. That is, as the objective lens 6, a type in which a magnetic field leaks from the objective lens may be used. In this case, the semiconductor detector 102 is disposed in the leakage magnetic field of the objective lens 6. Even in such a case, the same operational effects as when the objective lens 6 generates a leakage electric field can be obtained. The same applies when the objective lens 6 generates both a leakage electric field and a leakage magnetic field.

3. Modification of Scanning Electron Microscope 3.1. First Modification Next, a first modification of the scanning electron microscope according to the present embodiment will be described with reference to the drawings. FIG. 12 is a side view schematically showing the vicinity of the objective lens 6 of the scanning electron microscope according to the first modification. FIG. 13 is a cross-sectional view schematically showing the vicinity of the objective lens 6 of the scanning electron microscope according to the first modification. 12 and 13 illustrate a state where the semiconductor detector 102 is located at the detection position.

  Hereinafter, in the scanning electron microscope according to the first modification, members having the same functions as the constituent members of the above-described scanning electron microscope 100 are denoted by the same reference numerals, and detailed description thereof is omitted.

  In this modification, as shown in FIGS. 12 and 13, the plate 120 is in contact with the objective lens 6 and is different from the scanning electron microscope 100 described above.

  The plate 120 has a surface 124 opposite to the contact surface 122 in contact with the side surface of the objective lens 6. Therefore, it is possible to prevent the plate 120 from moving when the probe 110 is pressed against the plate 120. For example, when the side surface of the objective lens 6 is a curved surface, the surface 124 of the plate 120 is a curved surface along the side surface of the objective lens 6. Thereby, it can prevent that the plate 120 moves more reliably.

  In this modification, the same operational effects as those of the scanning electron microscope 100 described above can be achieved. Furthermore, in this modification, since the plate 120 is in contact with the objective lens 6, it is possible to prevent the plate 120 from moving when the probe 110 is pressed against and contacts the plate 120.

3.2. Second Modification Next, a second modification of the scanning electron microscope according to the present embodiment will be described with reference to the drawings. FIG. 14 is a side view schematically showing the vicinity of the objective lens 6 of the scanning electron microscope according to the second modification. FIG. 15 is a cross-sectional view schematically showing the vicinity of the objective lens 6 of the scanning electron microscope according to the second modification. 14 and 15 illustrate a state in which the semiconductor detector 102 is located at the detection position.

  Hereinafter, in the scanning electron microscope according to the second modification, members having the same functions as those of the constituent members of the scanning electron microscope 100 described above are denoted by the same reference numerals, and detailed description thereof is omitted.

  In this modification, as shown in FIGS. 14 and 15, when the semiconductor detector 102 is located at the detection position, the contact surface 62 formed by the notch 61 provided on the side surface of the objective lens 6. It differs from the scanning electron microscope 100 described above in that it is pressed against and touches.

  In other words, in the present modification, the member with which the probe 110 (pin 114) contacts when the semiconductor detector 102 is located at the detection position is constituted by the notch 61 provided on the side surface of the objective lens 6. Therefore, the scanning electron microscope according to this modification does not require the plate 120 and the plate support member 130 (see FIGS. 10 and 11).

  In the above description, the example in which the member that contacts the probe 110 is configured by the notch 61 provided on the side surface of the objective lens 6 has been described. However, the member that contacts the probe 110 is the probe 110 (pin 114). The configuration is not particularly limited as long as it has a surface to be pressed and contacted (a contact surface).

  In this modification, the same operational effects as those of the scanning electron microscope 100 described above can be achieved. Furthermore, in this modification, the plate 120 and the plate support member 130 are not necessary, so that the number of parts of the scanning electron microscope 100 can be reduced.

  In addition, embodiment mentioned above and a modification are examples, Comprising: It is not necessarily limited to these. For example, each embodiment and each modification can be combined as appropriate.

The present invention includes configurations that are substantially the same as the configurations described in the embodiments (for example, configurations that have the same functions, methods, and results, or configurations that have the same objects and effects). In addition, the invention includes a configuration in which a non-essential part of the configuration described in the embodiment is replaced. In addition, the present invention includes a configuration that exhibits the same operational effects as the configuration described in the embodiment or a configuration that can achieve the same object. Further, the invention includes a configuration in which a known technique is added to the configuration described in the embodiment.

DESCRIPTION OF SYMBOLS 2 ... Electron source, 4 ... Condenser lens, 5 ... Deflector, 6 ... Objective lens, 7 ... Sample stage, 8 ... Secondary electron detector, 10 ... Reflection electron detector, 12 ... Detector support member, 13 ... Sample Chamber ... 14 ... Moving mechanism 60 ... Objective lens flange 61 ... Notch 62 ... Contact surface 100 ... Scanning electron microscope 101 ... Hole 102 ... Semiconductor detector 103 ... Screw 104 ... Detector mounting base , 105 ... terminals, 106 ... connecting members, 107 ... probe base, 108 ... probe fixing plate, 109a ... screws, 109b ... screws, 110 ... probes, 112 ... housing, 114 ... pins, 116 ... coil springs, 120 ... plates , 122 ... Contact surface, 124 ... Surface, 130 ... Plate support member, 132 ... Base, 134 ... Support plate, 136 ... Screw hole

Claims (13)

An electron source,
An objective lens that focuses the electron beam emitted from the electron source and irradiates the sample;
A semiconductor detector for detecting radiation generated by irradiating the sample with an electron beam;
A detector support member supporting the semiconductor detector;
A first member supported by the detector support member and having an elastic portion;
A movement mechanism for moving the semiconductor detector between a detection position for detecting radiation and a retracted position deviating from the detection position via the detector support member;
A second member that contacts the first member when the semiconductor detector is located at the detection position;
Including a scanning electron microscope. In claim 1,
The first member is a scanning electron microscope that elastically contacts the second member. In claim 1 or 2,
The elastic part is a compression spring;
The first member has a contact connected to the compression spring;
A scanning electron microscope in which the contact contacts the second member when the semiconductor detector is positioned at the detection position. In any one of Claims 1 thru | or 3,
The scanning electron microscope, wherein the first member is a spring probe. In any one of Claims 1 thru | or 4,
A scanning electron microscope in which a plurality of the first members are provided. In any one of Claims 1 thru | or 5,
The second member is a scanning electron microscope, which is a plate-like member provided on a side of the objective lens. In any one of Claims 1 thru | or 6,
A scanning electron microscope including a support member that supports the second member such that the second member is positioned on a side of the objective lens. In claim 7,
The scanning electron microscope, wherein the support member is configured to be able to adjust a position of the second member. In any one of Claims 1 thru | or 5,
The second member is a scanning electron microscope configured by a notch formed in a side surface of the objective lens. In any one of Claims 1 thru | or 9,
The detection position is a scanning electron microscope between the objective lens and the sample. In any one of Claims 1 thru | or 10,
The objective lens generates at least one of a leakage electric field and a leakage magnetic field,
When the semiconductor detector is located at the detection position, the semiconductor detector is located in at least one of a leakage electric field of the objective lens and a leakage magnetic field of the objective lens. In any one of Claims 1 thru | or 11,
The semiconductor detector is a scanning electron microscope, which is a detector that detects reflected electrons or secondary electrons. In any one of Claims 1 thru | or 11,
The semiconductor detector is a scanning electron microscope that is a detector that detects X-rays.

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