JP2018190637A - Display panel, display, and information processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a display panel that comprises light emitting elements having high color purity and color reproducibility.SOLUTION: A display panel comprises a light emitting element in a first pixel and a second pixel. The light emitting element includes a light emitting layer that emits white light and a fine optical resonator structure. The fine optical resonator structures intensity blue light and red light each other. The first pixel has a blue coloring layer. In a transmission spectrum of the coloring layer, the maximum value of the transmittance of light within a wavelength range of 400 nm or more and less than 500 nm is 10 or more times the transmittance of light at a wavelength of 500 nm. The light emitted from the light emitting element of the first pixel can be visually recognized through the coloring layer.SELECTED DRAWING: Figure 1

Description

One embodiment of the present invention relates to a display panel, a display device, and an information processing device.

Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, a manufacture, or a composition (composition of matter). Therefore, the technical field of one embodiment of the present invention disclosed in this specification more specifically includes a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, a driving method thereof, or a manufacturing method thereof, Can be cited as an example.

With the development of display technology, the required performance is becoming more sophisticated every day. Standards indicating the color gamut that can be reproduced by a display include the sRGB standard and the NTSC standard, which have been widely used as indexes, but recently, BT. The 2020 standard has been proposed.

BT. That can represent almost all object colors. Although it is the 2020 standard, it is difficult to achieve the present situation by using a broad emission spectrum emitted from an organic compound as it is. Therefore, the standard is realized by increasing the color purity by using a micro optical resonator (microcavity) structure or the like. Attempts have been made.

In the display panel, a structure that covers a wider color gamut and that has regions having different micro-optical resonator structure lengths has been proposed (see, for example, Patent Document 1).

JP 2006-032327 A

A light-emitting element using a microcavity method is advantageous in realizing full color. In particular, in order to achieve wide color reproducibility, it is necessary to obtain an optimum emission spectrum peak wavelength and a sharp spectrum.

However, in the case of a full-color light-emitting element using a microcavity method, it is necessary to adjust the distance between a pair of electrodes for each pixel having a different emission color. A decrease in color purity is a problem. Further, when the viewing angle changes, a chromaticity difference may occur. At this time, the color reproducibility of the display panel deteriorates.

Furthermore, the productivity of the display panel is lowered due to an increase in the number of masks and processes for adjusting the distance between the pair of electrodes.

Therefore, one embodiment of the present invention has an element structure in which light of a desired wavelength is emitted from each light-emitting element with high color purity in a display panel using a microcavity method including a plurality of light-emitting elements that exhibit light of different wavelengths. Another object is to provide a display panel including a light-emitting element with high color reproducibility with a structure that can be used. Another object is to provide a display panel with a small difference in chromaticity depending on an angle of display.

Another object is to provide a display panel capable of reducing power consumption. Another object is to provide a display panel capable of vivid display.

Another object is to provide a display panel with high productivity, a novel display panel, a novel display device, a novel information processing device, or a novel semiconductor device.

Note that the description of these problems does not disturb the existence of other problems. Note that one embodiment of the present invention does not have to solve all of these problems. Issues other than these will be apparent from the description of the specification, drawings, claims, etc., and other issues can be extracted from the descriptions of the specification, drawings, claims, etc. It is.

The display panel of one embodiment of the present invention includes a first pixel, a second pixel, a first conductive film, a second conductive film, a light-emitting layer, and a first coloring film. In the first pixel and the second pixel, a light emitting layer is formed between the first conductive film and the second conductive film. In the first pixel, a first conductive film is formed between the first colored film and the second conductive film. The first pixel includes a portion in which a distance between the first conductive film and the second conductive film is the first distance, and the second pixel includes the first conductive film and the second conductive film. The distance from the conductive film has a portion that is the second distance, and the first distance is equal to the second distance.

The first conductive film has semi-light transmittance and semi-light reflectivity. The second conductive film has light reflectivity. The first colored film has a transmission spectrum having a first transmittance and a second transmittance. The first transmittance is a transmittance with respect to light having a wavelength of 500 nm, the second transmittance is the largest transmittance with respect to light in a wavelength range of 400 nm or more and less than 500 nm, and the second transmittance is , 10 times or more of the first transmittance.

In the above structure, a third pixel is included, and in the third pixel, a light-emitting layer is formed between the first conductive film and the second conductive film, and the third pixel includes the first conductive film. Preferably, the distance between the film and the second conductive film has a portion that is the second distance, and the third distance is different from the first distance.

In each of the above structures, the first colored film and the second colored film are included, and the first conductive film is interposed between the first colored film and the second conductive film in the second pixel. In the third pixel, a first conductive film is formed between the second colored film and the second conductive film, the first colored film transmits red light, and The colored film 2 preferably transmits green light.

In each of the above structures, the second conductive film preferably contains silver.

The display device of another embodiment of the present invention preferably includes a monitor wiring and a transistor, and the transistor preferably has a function of connecting the monitor wiring and the second conductive film. The monitor wiring is connected to the monitor circuit.

An information processing apparatus according to another aspect of the present invention includes at least one of a keyboard, a hardware button, a pointing device, a touch sensor, an illuminance sensor, an imaging device, a voice input device, a line-of-sight input device, and a posture detection device, and the above A display panel of each configuration.

In the drawings attached to the present specification, the components are classified by function, and the block diagram is shown as an independent block. However, it is difficult to completely separate the actual components for each function. May involve multiple functions.

The display panel of one embodiment of the present invention can narrow a spectrum of emitted light. As a result, the color purity of the light can be increased.

By increasing the color purity of the emitted light, a display panel with high visibility and improved color reproducibility can be provided. In addition, light with high color purity of a certain color is light whose light emission spectrum of the color is narrowed and light intensity in a wavelength region exhibiting another color is low.

Alternatively, a display panel that can reduce power consumption can be provided. Alternatively, a display panel with high productivity, a novel display panel, a novel display device, a novel input / output device, a novel information processing device, or a novel semiconductor device can be provided.

Alternatively, a display panel in which a change in chromaticity with a change in display angle is small can be provided. Alternatively, a display panel capable of vivid display can be provided.

Note that the description of these effects does not disturb the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. It should be noted that the effects other than these are naturally obvious from the description of the specification, drawings, claims, etc., and it is possible to extract the other effects from the descriptions of the specification, drawings, claims, etc. It is.

4A and 4B are a top view and cross-sectional views illustrating pixels of a display panel according to Embodiment. 4A and 4B illustrate light emitted from a display panel according to an embodiment. 4 is a cross-sectional view illustrating a pixel of a display panel according to Embodiment. FIG. 4 is a cross-sectional view illustrating a pixel of a display panel according to Embodiment. FIG. FIG. 6 is a top view illustrating a pixel of a display panel according to an embodiment. 4A and 4B illustrate a multi-tone mask according to an embodiment. 8A and 8B are cross-sectional views illustrating a method for manufacturing a display panel according to Embodiment. 8A and 8B are cross-sectional views illustrating a method for manufacturing a display panel according to Embodiment. FIG. 6 is a flowchart illustrating a method for manufacturing a display panel according to Embodiment. FIG. 6 is a top view illustrating a display panel according to Embodiment; FIG. 6 is a block diagram illustrating a structure of a display panel according to Embodiment. 4A and 4B are a circuit diagram and a timing chart illustrating a structure of a pixel circuit according to an embodiment. FIG. 6 is a top view illustrating a structure of a pixel according to an embodiment. FIG. 6 is a top view illustrating a structure of a pixel according to an embodiment. FIG. 10 is a cross-sectional view illustrating a display panel according to Embodiment; FIGS. 3A and 3B are a top view and a cross-sectional view of a transistor that can be used for the display panel of Embodiment. FIGS. 10A to 10D are cross-sectional views illustrating a method for manufacturing a transistor according to an embodiment. FIGS. 3A and 3B are a top view and a cross-sectional view of a transistor that can be used for the display panel of Embodiment. FIGS. FIG. 6 is a circuit diagram illustrating a structure of a pixel circuit according to an embodiment. 2A and 2B illustrate a structure of an information processing device according to an embodiment. 2A and 2B illustrate a structure of an information processing device according to an embodiment. The figure explaining the refractive index characteristic which concerns on an Example. The figure explaining the spectrum of the light which concerns on an Example. The figure explaining the transmission spectrum which concerns on an Example, and chromaticity difference.

Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in structures of the invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description thereof is not repeated.

The display panel of one embodiment of the present invention includes a plurality of pixels. The plurality of pixels include self-luminous display elements that display colors having different hues. The plurality of pixels include a minute optical resonator in a display element included in the pixel.

Thereby, a light-emitting device and a lighting device including a light-emitting element with high color purity can be provided. Furthermore, the number of steps and the cost can be reduced by making a part of the manufacturing process of the minute optical resonator structure of two pixels having different hues the same.

<Additional notes regarding the description of this specification>
In this specification, a variable that takes an integer of 1 or more as a value may be used as a sign. For example, (p) including a variable p that takes an integer value of 1 or more may be used as a part of a code that identifies any of the maximum p components. Further, for example, a variable m that takes an integer value of 1 or more and (m, n) including a variable n may be used as part of a code that identifies any of the maximum m × n components.

When a symbol supplemented to the code is used, a portion specified by the symbol is targeted among the objects corresponding to the code. When no symbol supplementing the code is used, all those having the code are targeted.

For example, when the pixel 502 is described, all of the pixel 502 (1, 1) to the pixel 502 (m, n) and the like are targeted. For example, when it is described as the conductive film 532A, all of the conductive film 532A_DA, the conductive film 532A_DB, and the like are targeted.

In this specification, the terms “source” and “drain” of a transistor interchange with each other depending on the polarity of the transistor or the level of potential applied to each terminal. In general, in an n-channel transistor, a terminal to which a low potential is applied is called a source, and a terminal to which a high potential is applied is called a drain. In a p-channel transistor, a terminal to which a low potential is applied is called a drain, and a terminal to which a high potential is applied is called a source. In this specification, for the sake of convenience, the connection relationship between transistors may be described on the assumption that the source and the drain are fixed. However, the names of the source and the drain are actually switched according to the above-described potential relationship. .

In this specification, the source of a transistor means a source region that is part of a semiconductor film functioning as an active layer or a source electrode connected to the semiconductor film. Similarly, a drain of a transistor means a drain region that is part of the semiconductor film or a drain electrode connected to the semiconductor film. The gate means a gate electrode.

In this specification, one of a first electrode and a second electrode of a transistor refers to a source electrode, and the other refers to a drain electrode. When the transistor is on, a current flows between the first electrode and the second electrode. When the transistor is off, no current flows between the first electrode and the second electrode. In an n-type transistor, the transistor is turned on when the gate voltage is high, and the transistor is turned off when the gate voltage is low.

In this specification, when a transistor includes a first conductive film and a first electrode, the first conductive film of the transistor is connected to the first electrode of the transistor. When the transistor has the second conductive film and the second electrode, the second conductive film of the transistor is connected to the second electrode of the transistor.

In this specification and the like, a switch refers to a switch that is in a conductive state (on state) or a non-conductive state (off state) and has a function of controlling whether or not to pass current. Alternatively, the switch refers to a switch having a function of selecting and switching a current flow path.

As an example, an electrical switch or a mechanical switch can be used. That is, the switch is not limited to a specific one as long as it can control the current.

Note that in the case where a transistor is used as the switch, the “conducting state” of the transistor means a state where the source electrode and the drain electrode of the transistor can be regarded as being electrically short-circuited. In addition, the “non-conducting state” of a transistor refers to a state where the source electrode and the drain electrode of the transistor can be regarded as being electrically disconnected. Note that when a transistor is operated as a simple switch, the polarity (conductivity type) of the transistor is not particularly limited.

In this specification, silicon oxynitride refers to a material having a higher oxygen content than nitrogen as its composition, and silicon nitride oxide refers to a material having a higher nitrogen content than oxygen as its composition. .

In this specification, the connection means an electrical connection, and corresponds to a state where current, voltage, or potential can be supplied or transmitted. Therefore, the connected state does not necessarily indicate a directly connected state, and a wiring, a resistor, a diode, a transistor, or the like is provided so that current, voltage, or potential can be supplied or transmitted. The state of being indirectly connected through a circuit element is also included in the category.

In this specification, even when independent components on the circuit diagram are connected to each other, in practice, for example, when a part of the wiring functions as an electrode, In some cases, it also has the functions of the components. In this specification, the term “connection” includes a case where one conductive film has functions of a plurality of components.

(Embodiment 1)
In this embodiment, a structure of a display panel of one embodiment of the present invention is described.

The display panel described in this embodiment includes a plurality of pixels. A video signal is supplied to each of the plurality of pixels.

<Pixel Configuration Example 1>
The display panel 500 includes a pixel 502 (i, j) and a pixel 502 (i, j + 1) (see FIGS. 1A and 1B). A top view of a pixel of the display panel 500 is shown in FIG. FIG. 1B is a cross-sectional view of the display panel 500 along the cutting line A1-A2, the cutting line A3-A4, and the cutting line A5-A6 in FIG.

The pixel 502 (i, j) and the pixel 502 (i, j + 1) have a function of displaying colors having different hues.

The display panel 500 includes a light emitting layer 606, a conductive film 604, and a conductive film 608. The light emitting layer 606 is a layer containing a light emitting material.

The display panel 500 includes a colored film CF_1. The display panel 500 includes a substrate 506.

The pixel 502 (i, j) includes the display element 602 (i, j) (see FIG. 1B). The display element 602 (i, j) has a function of emitting light. In the region 603 (i, j), the light-emitting layer 606 and the conductive film 605 (i, j) are in contact with each other.

The pixel 502 (i, j + 1) includes the display element 602 (i, j + 1) (see FIG. 1B). The display element 602 (i, j + 1) has a function of emitting light. In the region 603 (i, j + 1), the light-emitting layer 606 and the conductive film 605 (i, j + 1) are in contact with each other.

An insulating film 610 is provided between different regions 603 so that the region between the region 603 (i, j) and the region 603 (i, j + 1) is an example (see FIGS. 1A and 1B).

The display panel 500 includes a conductive film 605 (i, j) between the conductive film 604 (i, j) and the light-emitting layer 606 in the pixel 502 (i, j). In the pixel 502 (i, j + 1), the conductive film 605 (i, j + 1) is provided between the conductive film 604 (i, j + 1) and the light-emitting layer 606. The conductive film 605 (i, j) and the conductive film 605 (i, j + 1) have light transmittance.

The display panel 500 includes a bonding layer 564 between the display element 602 and the coloring film CF.

For example, an organic EL element can be used for the display element 602 (i, j) and the display element 602 (i, j + 1).

In the pixel 502 (i, j), the light-emitting layer 606 is formed between the conductive film 608 and the conductive film 604 (i, j).

In the pixel 502 (i, j), the conductive film 608 is formed between the coloring film CF_1 and the conductive film 604 (i, j).

<Micro optical resonator structure>
A display panel 500 described in this embodiment includes a micro optical resonator structure in each of a pixel 502 (i, j) and a pixel 502 (i, j + 1).

The minute optical resonator structure includes a film having a semi-light transmitting property and a semi-light reflecting property, and a light reflecting film. A predetermined interval is provided between the semi-light transmissive / semi-light reflective film and the light reflective film. The predetermined interval has a light transmissive film or void. The light in the minute optical resonator structure resonates at the interval and strengthens light of a specific wavelength. As a result, the light intensity other than that color becomes relatively small, and the color purity of the color becomes high.

Note that a film having semi-light transmissivity and semi-light reflectivity has a function of transmitting part of visible light and a function of reflecting another part. For example, a metal film that is thin enough to transmit light can be used as a film having semi-light-transmitting properties and semi-light-reflecting properties.

In the pixel 502 (i, j), the distance between the conductive film 608 and the conductive film 604 (i, j) is a portion where the distance is d1. In addition, in the pixel 502 (i, j + 1), a distance between the conductive film 608 and the conductive film 604 (i, j + 1) is a distance d2.

The distance d1 is equal to the distance d2. The minute optical resonator structure included in the pixel 502 (i, j) enhances both the color light displayed by the pixel 502 (i, j) and the color light displayed by the pixel 502 (i, j + 1). meet.

By making the distance d1 and the distance d2 equal, the display element 602 (i, j) and the display element 602 (i, j + 1) can be formed in the same manufacturing process.

In the manufacturing process, the number of lithography processes can be reduced by processing the conductive film 604 and the conductive film 605 into different shapes using a multi-tone (high-tone) mask. That is, the process can be simplified and the display panel 500 can improve productivity.

A multi-tone (high-tone) mask can obtain a resist mask 620 and a resist mask 622 obtained by reducing the thickness of the resist mask 620 in one lithography process (see FIGS. 7A and 7B). The conductive film 604 and the conductive film 605 are processed into different shapes by etching the conductive film 604 and the conductive film 605 using the resist mask 620 and then etching only the conductive film 605 using the resist mask 622. Can do. The manufacturing process will be described later.

The minute optical resonator structure included in the pixel 502 (i, j) enhances both the light in the first wavelength region and the light in the second wavelength region by setting the distance d1 to a predetermined value. be able to. Here, the wavelengths of the light included in the second wavelength region are all greater than the maximum wavelength in the first wavelength region.

The conductive film 608 has semi-light transmittance and semi-light reflectivity, and the conductive film 604 has light reflectivity. In the pixel 502 (i, j), light emitted from the light-emitting layer 606 resonates between the conductive film 608 and the conductive film 604 (i, j) and reaches the coloring film CF_1.

The video signal supplied to the pixel 502 (i, j) corresponds to the intensity of light in the first wavelength region. The video signal supplied to the pixel 502 (i, j + 1) corresponds to the intensity of light in the second wavelength region.

The colored film CF_1 transmits the light in the first wavelength region of the light L1 emitted in the vertical direction 630 out of the light emitted from the pixel 502 (i, j) (see FIG. 2A). . The colored film CF_1 absorbs or reflects light in the second wavelength region. Since the intensity of the light in the first wavelength region of the light L1 is enhanced by the microresonator structure, the light passing through the colored film CF_1 has high color purity of the light in the first wavelength region.

With the minute optical resonator structure, the pixel 502 (i, j) can emit light in the first wavelength region corresponding to the video signal with high color purity in the direction 630. Further, the pixel 502 (i, j + 1) can emit light in the second wavelength region corresponding to the video signal with high color purity in the direction 630.

For example, the wavelength region of blue light is a first wavelength region, and the wavelength region of red light is a second wavelength region. At this time, the pixel 502 (i, j) can display blue.

When the pixel 502 (i, j) and the pixel 502 (i, j + 1) perform display with enhanced color purity of light, the color reproducibility of the display panel 500 is improved.

<Change in the second wavelength region according to the light emission direction>
A direction 630 and a direction 632 perpendicular to the surface of the pixel 502 (i, j) form an angle R (see FIG. 2A). The light L 1 is emitted in the direction 630 and the light L 2 is emitted in the direction 632.

Although the light L1 and the light L2 are emitted from the same micro optical resonator structure, the optical path length of the light L2 in the micro optical resonator structure is larger than the optical path length of the light L1. At this time, the colors of the light to be strengthened are different from the light L1 and the light L2. That is, as the angle R changes, the first wavelength region and the second wavelength region of the light L2 change.

<Colored film>
FIG. 2B is a diagram illustrating an example of a transmission spectrum of the colored film CF_1. The horizontal axis is the wavelength of light, and the vertical axis is the light transmittance.

When the pixel 502 (i, j) includes the colored film CF_1 having the transmission spectrum as illustrated in FIG. 2B, the light in the second wavelength region of the light L2 passes through the colored film CF_1. Injection in the direction 632 can be effectively reduced.

The colored film CF_1 included in the display panel 500 of one embodiment of the present invention has a transmission spectrum including the transmittance T1 and the transmittance T2.

The transmittance T1 is the transmittance of the colored film CF_1 with respect to light having a wavelength of 500 nm, and the transmittance T2 is the highest transmittance with respect to light in the wavelength range of 400 nm or more and less than 500 nm. The transmittance T2 is 10 times or more the transmittance T1.

At this time, the pixel 502 (i, j) can emit light having a wavelength of 400 nm or more and less than 500 nm.

By setting the transmittance T2 of the colored film CF_1 to 10 times or more of the transmittance T1, as an example, the chromaticity difference Δu′v ′ is set to 0.1 or less when the angle R is in the range of 0 ° to 80 °. be able to. Details will be described in Examples.

As one means for setting the transmittance T2 of the colored film CF_1 to 10 times or more of the transmittance T1, the thickness of the colored film can be set to a predetermined value. For example, it is assumed that the transmittance T1 of the resin A having a thickness of 1 μm is 20% and the transmittance T2 is 80%. At this time, the transmittance T1 is 25% of the transmittance T2. When the resin A has a thickness of 2 μm, the transmittance T1 is 4%, the transmittance T2 is 64%, and the transmittance T1 is 6.25% of the transmittance T2.

The colored film CF is formed in contact with the substrate 506.

For the colored film CF, for example, a metal material, a resin material, a resin material containing a pigment or a dye, or the like can be used.

By including the colored film CF_1 whose transmittance T2 is 10 times or more that of the transmittance T1, the pixel 502 (i, j) reduces the emission of light in the second wavelength region in the direction 632, and the display panel 500 Color reproducibility is improved and visibility can be improved.

<Pixel Configuration Example 2>
The display panel 500 may include a pixel 502 (i, j + 2) (see FIGS. 1A and 1B).

The pixel 502 (i, j), the pixel 502 (i, j + 1), and the pixel 502 (i, j + 2) have a function of displaying colors having different hues.

The pixel 502 (i, j + 2) includes the display element 602 (i, j + 2) (see FIG. 1B). The display element 602 (i, j + 2) has a function of emitting light. In the region 603 (i, j + 2), the light-emitting layer 606 and the conductive film 604 (i, j + 2) are in contact with each other.

For example, an organic EL element can be used for the display element 602 (i, j + 2).

In the pixel 502 (i, j + 2), a distance between the conductive film 608 and the conductive film 604 (i, j + 2) is a distance d3.

The distance d3 is different from the distance d1.

In the display panel 500, the conductive film 608 and the light-emitting layer 606 are in contact with each other in the pixel 502 (i, j + 2). That is, when the distance d3 is subtracted from the distance d1, it becomes equal to the thickness of the conductive film 605 (i, j).

The pixel 502 (i, j + 2) has a minute optical resonator structure, and enhances light of colors displayed by the pixel 502 (i, j + 2). In the pixel 502 (i, j + 2), light emitted from the light-emitting layer 606 resonates between the conductive film 608 and the conductive film 604 (i, j + 2).

The minute optical resonator structure included in the pixel 502 (i, j + 2) can intensify the light in the third wavelength region by setting the distance d3 to a predetermined value. The third wavelength region is different from both the first wavelength region and the second wavelength region.

For example, the wavelength region exhibiting green can be set as the third wavelength region.

The pixel 502 (i, j + 2) included in the display panel 500 can perform display with improved color purity of light in the third wavelength region.

<Pixel Configuration Example 3>
The display panel 500 may include a coloring film CF_2 and a coloring film CF_3 (see FIGS. 1A and 1B).

In the pixel 502 (i, j + 1), a conductive film 608 is formed between the coloring film CF_2 and the conductive film 604 (i, j + 1). In the pixel 502 (i, j + 2), the conductive film 608 is formed between the coloring film CF_3 and the conductive film 604 (i, j + 2).

In the pixel 502 (i, j + 1), light emitted from the light-emitting layer 606 resonates between the conductive film 608 and the conductive film 604 (i, j + 1) and reaches the coloring film CF_2. In the pixel 502 (i, j + 2), light emitted from the light-emitting layer 606 resonates between the conductive film 608 and the conductive film 604 (i, j + 2) and reaches the coloring film CF_3.

In the pixel 502 (i, j + 1), the wavelength region exhibiting red is set as the second wavelength region by setting the distance d2 equal to the distance d1 and a predetermined value. The colored film CF_2 has a transmission spectrum that transmits red light.

In the pixel 502 (i, j + 2), the wavelength region exhibiting green is set as the third wavelength region by setting the distance d3 to a predetermined value. The colored film CF_3 has a transmission spectrum that transmits green light.

The video signal supplied to the pixel 502 (i, j + 2) corresponds to the light intensity in the third wavelength region.

The pixel 502 (i, j) displays blue, the pixel 502 (i, j + 1) displays red, and the pixel 502 (i, j + 2) has a function of displaying green. Can be used for full color display.

Further, for example, a pixel or the like for displaying white can be provided and used for display.

<Components>
The components included in the display panel 500 other than the components described in the above portion will be described (see FIG. 1B).

<Conductive film 604>
A light-reflective material, in other words, a material that has reflectivity with respect to visible light and has conductivity, can be used for the conductive film 604.

For example, silver can be used. Alternatively, an alloy containing silver, a metal material such as aluminum, gold, platinum, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium can be used. In addition, lanthanum, neodymium, germanium, or the like may be added to the metal material or alloy. An alloy containing silver such as an alloy of silver and copper, an alloy of silver, palladium and copper (also referred to as Ag-Pd-Cu or APC), an alloy of silver and magnesium, or the like may be used. An alloy containing silver and copper is preferable because of its high heat resistance. Here, APC is an alloy of silver, palladium and copper made by Furuya Metal Co., Ltd., and its composition is about 98 wt% Ag, about 1 wt% Pd and about 1 wt% Cu. .

When the conductive film 604 is made of a material containing silver, the reflectance can be increased and the characteristics of the light having a specific wavelength included in the minute optical resonator can be improved.

In addition to a material containing silver, a metal material such as aluminum, gold, platinum, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium, or an alloy containing these metal materials can be used. . One or more metal films or metal nitride films selected from titanium, tantalum, tungsten, molybdenum, and chromium are not brittle when exposed to an oxidizing atmosphere, and maintain conductivity, so that they are exposed to oxygen plasma. This is a preferred material. In addition, lanthanum, neodymium, germanium, or the like may be added to the metal material or alloy.

Alternatively, an alloy containing aluminum (aluminum alloy) such as an alloy of aluminum and titanium, an alloy of aluminum and nickel, an alloy of aluminum and neodymium, an alloy of aluminum, nickel, and lanthanum (Al-Ni-La) can be used. it can. Furthermore, the oxidation of the aluminum alloy film can be suppressed by stacking a metal film or a metal oxide film in contact with the aluminum alloy film. Examples of the material for the metal film and metal oxide film include titanium and titanium oxide. Alternatively, the conductive film that transmits visible light and a film made of a metal material may be stacked.

For example, APC with a thickness of 200 nm can be used for the conductive film 604.

<Light emitting layer 606>
The light emitting layer 606 emits light having a spectrum including light in the first wavelength region, light in the second wavelength region, and light in the third wavelength region.

For example, a light-emitting layer that emits white light can be used for the light-emitting layer 606 (see FIG. 1B).

For example, a light-emitting organic compound can be used for the light-emitting layer 606. In the pixel 502, the light emitting layer 606 can have a thickness of, for example, 188 nm.

<Conductive film 605>
For example, a material that has a light-transmitting property with respect to visible light and is selected from materials that can be used for wirings or the like can be used for the conductive film 605.

Specifically, a conductive oxide or a conductive oxide containing indium, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide to which gallium is added, or the like is used for the conductive film 605. it can. Alternatively, a thin metal film that transmits light can be used for the conductive film 605. Alternatively, a metal film that transmits part of light and reflects other part of light can be used for the conductive film 605.

As the conductive film 605, for example, an oxide conductive film having a thickness of 120 nm and containing indium, tin, and silicon can be used.

<Conductive film 608>
For example, a film having a visible light reflectance of 20% to 80%, preferably 40% to 70% can be used.

A thin metal film having the above reflectance can be used. For example, the same material as the conductive film 604 can be used for the metal film.

For example, when APC is used as a material, the film thickness can be 5 nm to 30 nm, typically 15 nm.

<Insulating film 610>
The insulating film 610 is, for example, a photosensitive acrylic resin film, an inorganic material such as silicon oxide or silicon nitride, an organic material such as epoxy, polyimide, polyamide, polyvinylphenol, or benzocyclobutene, or a siloxane material such as siloxane resin. It can be provided in a single layer or laminated structure.

For example, a film containing polyimide with a thickness of 1 μm can be used for the insulating film 610.

<Junction layer 564>
The bonding layer 564 has a function of bonding a substrate (not illustrated) over which the display element 602 is formed and the substrate 506 to each other.

For example, an organic material such as a heat-meltable resin or a curable resin can be used for the sealing material 566.

For example, a material including an epoxy resin, an acrylic resin, a silicone resin, a phenol resin, a polyimide resin, an imide resin, a PVC (polyvinyl chloride) resin, a PVB (polyvinyl butyral) resin, an EVA (ethylene vinyl acetate) resin, or the like is used. Can do.

The use of a material containing fluorine is preferable because it has a function of preventing entry of hydrogen, moisture, and the like into the display element 602.

<Substrate 506>
For example, a glass substrate, a ceramic substrate, a quartz substrate, a sapphire substrate, or the like can be used for the substrate 506.

The substrate 506 is attached to the display element 602 with a bonding layer 564.

The substrate 506 needs to have heat resistance enough to withstand heat treatment in the manufacturing process. The substrate 506 needs to have light transmittance.

The substrate 506 may have flexibility. For example, an organic material such as a resin, a resin film, or plastic can be used for the flexible substrate. Specifically, a resin film or a resin plate such as polyester, polyolefin, polyamide, polyimide, polycarbonate, or acrylic resin can be used.

As a method for providing a transistor over a flexible substrate, there is a method in which a transistor is manufactured over a non-flexible substrate, and then the transistor is peeled off and transferred to a flexible substrate. In that case, a separation layer is preferably provided between the non-flexible substrate and the transistor.

The display panel of one embodiment of the present invention has a minute optical resonator structure, and thus can reproduce color gamuts of various standards. For example, sRGB (standard RGB) widely used in electronic devices such as PAL (Phase Alternating Line) standards and NTSC (National Television System Committee) standards used in television broadcasting, personal computers, digital cameras, printers, etc. ITU-R BT., Which is used in the standard, Adobe RGB standard, HDTV (also known as High Definition Television). 709 (International Telecommunication Union Radiocommunication Sector Broadcasting Service (Television) 709) standard, DCI-P3 (Digital CinitiitiPUU standard used in digital cinema projection, Digital Cinema Initiative PTV). R BT. A color gamut such as 2020 (REC. 2020 (Recommendation 2020)) standard can be reproduced.

At least part of the structure of this embodiment can be implemented in combination with any of the other embodiments as appropriate.

(Embodiment 2)
In this embodiment, a display panel 500_2, a display panel 500_3, and a display panel 500_4 which are different from the display panel 500 are described.

Similar to the display panel 500, the display panel 500_2, the display panel 500_3, and the display panel 500_4 can perform display with high color purity.

<Pixel Configuration Example 4>
A top view of a pixel of the display panel 500_2 is illustrated in FIG.

FIG. 3 is a cross-sectional view illustrating a pixel of the display panel 500_2 of one embodiment of the present invention. FIG. 3 is a cross-sectional view taken along line A1-A2, line A3-A4, and line A5-A6 in FIG.

The display panel 500_2 includes a conductive film 609 between the conductive film 608 and the bonding layer 564. The conductive film 609 can be a light-transmitting film.

For the conductive film 609, the same material as the conductive film 605 (i, j) can be used, for example.

The conductive film 609 can be used as an auxiliary wiring of the conductive film 608. Even when the thickness of the conductive film 608 is small and the wiring resistance is high, the display panel 500_2 can perform favorable display.

The display panel 500_2 includes a conductive film 605 (i, j) between the conductive film 608 and the light-emitting layer 606 in the pixel 502 (i, j). In the pixel 502 (i, j + 1), a conductive film 605 (i, j + 1) is provided between the conductive film 608 and the light-emitting layer 606.

In the display panel 500_2, the light-emitting layer 606 and the conductive film 608 are in contact with each other in the pixel 502 (i, j + 2).

The conductive film 605 can be a light-transmitting film.

The other structure of the display panel 500_2 is the same as that of the display panel 500.

<Pixel Configuration Example 5>
A top view of a pixel of the display panel 500_3 can be illustrated in FIG.

FIG. 4A is a cross-sectional view illustrating a pixel of the display panel 500_3 of one embodiment of the present invention. 4A is a cross-sectional view taken along section line A1-A2, section line A3-A4, and section line A5-A6 of FIG. However, the coloring film CF and the substrate 506 have the same structure as the display panel 500 shown in FIG. 1B, and description thereof is omitted in FIG.

The structure of the display panel 500_2 may not include the conductive film 609. At this time, the conductive film 605 and the bonding layer 564 are in contact with each other.

The other structure of the display panel 500_3 is the same as that of the display panel 500_2.

<Pixel Configuration Example 6>
A top view of a pixel of the display panel 500_4 can be shown in FIG.

FIG. 4B is a cross-sectional view illustrating a pixel of the display panel 500_4 of one embodiment of the present invention. 4B is a cross-sectional view taken along section line A1-A2, section line A3-A4, and section line A5-A6 of FIG. However, the coloring film CF and the substrate 506 have the same structure as the display panel 500 shown in FIG. 1B, and a description thereof is omitted in FIG.

The display panel 500_4 includes the conductive film 605_2 between the conductive film 604 and the light-emitting layer 606 and between the conductive film 604 and the insulating film 610 in the pixel 502 (i, j) and the pixel 502 (i, j + 1). A conductive film 605_1 is provided between the conductive films 605_2 and 604.

The display panel 500_4 includes the conductive film 605_1 between the conductive film 604 and the light-emitting layer 606 and between the conductive film 604 and the insulating film 610 in the pixel 502 (i, j + 2).

In the display panel 500_4, the light-emitting layer 606 and the conductive film 608 are in contact with each other.

In one etchant or an etching atmosphere, the conductive film 605_1 preferably has a lower etch rate than the conductive film 605_2. The conductive films 605_1 and 605_2 can each be a light-transmitting film.

In the manufacturing process, the conductive film 605_1 and the conductive film 605_2 are formed into different shapes using a resist mask 620 and a resist mask 622 which are obtained using a multi-tone (high-tone) mask (see FIGS. 7A and 7B). By processing, the number of lithography processes can be reduced, the process can be simplified, and the productivity of the display panel 500_4 can be improved.

The conductive film 604, the conductive film 605_1, and the conductive film 605_2 are etched using the resist mask 620. Next, the conductive film 605_1 and the conductive film 605_2 can be processed into different shapes by etching only the conductive film 605_2 using the resist mask 622. At this time, when the conductive film 605_1 has a lower etch rate than the conductive film 605_2, it is easy to leave the conductive film 605_1 during processing.

The other structure of the display panel 500_4 is the same as that of the display panel 500.

At least part of the structure of this embodiment can be implemented in combination with any of the other embodiments as appropriate.

(Embodiment 3)
<Example of pixel manufacturing method>
In this embodiment, a method for manufacturing a display element will be described. In particular, a manufacturing method using a multi-tone (high-tone) mask will be described.

FIG. 5A is a cross-sectional view illustrating a structure of a display panel 500 (see FIG. 1B). 5A shows a cross-sectional view taken along the cutting lines A1-A2, A3-A4, and A5-A6 shown in FIG. 1A, as well as a cutting line X5- A sectional view of X6 is shown (see FIGS. 10 and 15).

The display panel 500 includes a display element 602 (i, j), a display element 602 (i, j + 1), and a display element 602 (i, j + 2).

A conductive film 604 (i, j) and a conductive film 605 (i, j) are provided in a region where the display element 602 (i, j) is formed. A conductive film 604 (i, j + 1) and a conductive film 605 (i, j + 1) are provided in a region where the display element 602 (i, j + 1) is formed. A conductive film 604 (i, j + 2) is provided in a region where the display element 602 (i, j + 2) is formed.

Other configurations of the display element 602 (i, j), the display element 602 (i, j + 1), and the display element 602 (i, j + 2) are common.

FIGS. 5B, 5C, 7A, 7B, 7C, 8D, and 8C illustrate a method for manufacturing a display panel. FIG. FIG. 9 is a flowchart illustrating a method for manufacturing a display panel.

FIG. 5B shows a state where a conductive film 604 is formed over the insulating film 538B and a conductive film 605 is formed thereover. For each film, for example, the material described in Embodiment 1 can be used.

As an example, first, a conductive film 604 and APC with a thickness of 200 nm are formed by a sputtering method in a process PR1.

Next, in step PR2, a conductive film 605 is formed. The conductive film 605 can be formed using the material described in Embodiment 1. In this embodiment, the conductive film 605 is formed by sputtering using argon gas and oxygen gas by using a target having 85% In ₂ O ₃ , 10% SnO ₂ , and 5% SiO ₂ by weight. The film thickness is 120 nm.

Next, in a process PR3, a resist mask 620 is formed over the conductive film 605 (see FIG. 5C).

The resist mask 620 has a region 41 and a region 42. The region 41 includes a pixel 502 (i, j) and a pixel 502 (i, j + 1). The region 42 includes a pixel 502 (i, j + 2). The resist mask 620 has a smaller film thickness in the region 42 than in the region 41. That is, it can be said that a region overlapping with the pixel 502 (i, j + 2) is a concave portion.

In this embodiment mode, exposure using a multi-tone (high-tone) mask is used for forming the resist mask 620. At this time, resist masks 620 having different resist thicknesses can be formed. The region 43 on the substrate is, for example, a portion between adjacent pixels 502 or a portion where the drive circuit 514A or the drive circuit 514B is formed. In the region 43, the resist mask 620 is not formed.

Exposure using a multi-tone (high-tone) mask will be described.

First, a resist is formed to form a resist mask. As the resist, a positive resist or a negative resist can be used. Here, a positive resist is used. The resist may be formed by a spin coating method or may be selectively formed by an ink jet method. When the resist is selectively formed by an ink-jet method, formation of the resist in unnecessary portions can be reduced, so that waste of materials can be reduced.

Next, using a multi-tone mask as an exposure mask, the resist is irradiated with light to expose the resist.

A multi-tone mask is a mask capable of performing three exposure levels on an exposed portion, an intermediate exposed portion, and an unexposed portion, and is an exposure mask in which transmitted light has a plurality of intensities. With a single exposure and development process, a resist mask having a plurality of thickness regions can be formed. Therefore, by using a multi-tone mask, the number of lithography processes can be reduced and the process can be simplified.

Typical examples of the multi-tone mask include a gray-tone mask 10a as shown in FIG. 6A and a half-tone mask 10b as shown in FIG. 6C.

As shown in FIG. 6A, the gray tone mask 10a includes a light-transmitting substrate 13 and a light-shielding film 15 formed on the light-transmitting substrate 13. Further, the gray tone mask 10a includes a light shielding part 17 provided with a light shielding film, a diffraction grating part 18 provided by a pattern of the light shielding film, and a transmission part 19 provided with no light shielding film.

As the light-transmitting substrate 13, a light-transmitting substrate such as quartz can be used. The light shielding film 15 can be formed using a light shielding material that absorbs light, such as chromium or chromium oxide.

FIG. 6B shows the light transmittance TR when the gray-tone mask 10a is irradiated with the exposure light. As shown in FIG. 6B, the light transmittance 21 in the light shielding portion 17 is 0%. In the transmission part 19, the light transmittance 21 is approximately 100%. In the diffraction grating portion 18, the light transmittance 21 can be adjusted in the range of 10% to 70%. In the diffraction grating portion 18, the interval between the light transmitting portions such as slits, dots, and meshes is set to be equal to or less than the resolution limit of light used for exposure. And the diffraction grating part 18 can control the transmittance | permeability of light by adjusting the space | interval and pitch of a slit, a dot, or a mesh. Note that the diffraction grating unit 18 can use either a periodic slit, a dot, or a mesh, or an aperiodic slit, dot, or mesh.

As shown in FIG. 6C, the halftone mask 10b includes a light-transmitting substrate 13 and a light-shielding film 25 and a semi-light-transmitting film 23 formed on the light-transmitting substrate 13. The halftone mask 10b includes a light shielding portion 27 provided with the light shielding film 25 and the semi-light transmission film 23, a semi-light transmission portion 28 provided with the semi-light transmission film 23 without the light shielding film 25, and the light shielding. It has a transmission part 29 where the film 25 and the semi-light transmission film 23 are not provided.

FIG. 6D shows the light transmittance when the halftone mask 10b is irradiated with exposure light.
As shown in FIG. 6D, the light transmittance 31 is 0% in the light shielding portion 27, and the light transmittance 31 is substantially 100% in the transmissive portion 29. In the semi-light transmitting portion 28, the light transmittance 31 can be adjusted in the range of 10% to 70%. In the semi-light transmitting portion 28, the light transmittance can be controlled by the material of the semi-light transmitting film 23.

For the semi-light transmission film 23, MoSiN, MoSi, MoSiO, MoSiON, CrSi, or the like can be used. The light shielding film 25 can be made of a light shielding material that absorbs light, such as chromium or chromium oxide.

By developing after exposure using a multi-tone mask, a resist mask having regions with different thicknesses can be formed as shown in FIG.

Note that, as the multi-tone mask, two types of resist film thicknesses are shown, but the embodiment of the present invention is not limited to this. By using the diffraction grating portion 18 or the semi-light transmission film 23 having a plurality of light transmittances, a resist having three or more kinds of film thicknesses can be formed.

Next, in Step PR4, the conductive film 604 and the conductive film 605 in the region 43 are removed using the resist mask 620 as a mask (see FIG. 7A). Through the process PR4, a conductive film 604 (i, j) and a conductive film 605 (i, j) are formed in the pixel 502 (i, j). Similarly, in the pixel 502 (i, j + 1), a conductive film 604 (i, j + 1) and a conductive film 605 (i, j + 1) are formed. In the pixel 502 (i, j + 2), a conductive film 604 (i, j + 1) and a conductive film 605 (i, j + 1) are formed.

The conductive film 605 can be processed by wet etching. Examples of chemicals that can be used for wet etching include oxalic acid, aluminum mixed acid, and a solution obtained by diluting 85% phosphoric acid to 1%.

The etching of the conductive film 605 is not limited to wet etching, and dry etching may be used.

As an etching gas used for dry etching, a gas containing chlorine (chlorine-based gas such as chlorine (Cl ₂ ), boron trichloride (BCl ₃ ), silicon tetrachloride (SiCl ₄ ), carbon tetrachloride (CCl ₄ ), or the like) Is preferred.

Further, as other etching gas used for dry etching, a gas containing fluorine (fluorine-based gas such as carbon tetrafluoride (CF ₄ ), sulfur hexafluoride (SF ₆ ), nitrogen trifluoride (NF ₃ )
), Trifluoromethane (CHF ₃ ), etc.), hydrogen bromide (HBr), oxygen (O ₂ ), a gas obtained by adding a rare gas such as helium (He) or argon (Ar) to these gases, or the like. Can do.

The conductive film 605 (i, j + 2) formed in the pixel 502 (i, j + 2) is removed in a process described later.

Wet etching can be used for processing the conductive film 604 and the conductive film 605. However, the processing method is not limited to this, and dry etching may be used, for example.

Next, in step PR5, the thickness of the resist mask 620 is reduced in the direction of the arrow 624 to form a resist mask 622 (see FIGS. 7A and 7B).

As a means for reducing the thickness of the resist mask 620, an ashing apparatus can be used.

For example, as the ashing, photoexcited ashing may be used in which a gas such as oxygen or ozone is irradiated with light such as ultraviolet rays, and the gas and the organic substance are chemically reacted to remove the organic substance. As ashing, plasma ashing may be used in which a gas such as oxygen or ozone is turned into plasma at a high frequency and the organic matter is removed using the plasma.

In the resist mask 620 where the resist mask is thin, the resist is removed by the process PR5 (see FIG. 7B). As a result, the resist mask in the region 42 overlapping with the pixel 502 (i, j + 2) is removed, and the conductive film 605 (i, j + 2) of the pixel 502 (i, j + 2) is exposed.

Next, in Step PR6, the conductive film 605 of the pixel 502 (i, j + 2) is etched using the resist mask 622 as a mask. The conductive film 605 (i, j + 2) is formed over the conductive film 604 (i, j + 2) before the etching, but after the etching, the conductive film 604 (i, j + 1) is formed as shown in FIG. Remain. Therefore, the conductive film 605 (i, j + 2) is preferably a material having a higher etching rate than the conductive film 604 (i, j + 2) with respect to a predetermined solution or etching atmosphere.

For the etching, for example, room temperature oxalic acid, room temperature mixed acid aluminum, or room temperature solution in which 85% phosphoric acid is diluted to 1% can be used.

The etching rate when oxalic acid is used for the conductive film 605 is about 10 times larger than the etching rate of APC. Therefore, the APC film reduction due to the etching of the conductive film 605 using oxalic acid is small.

Next, the resist mask 622 is removed in a process PR7 (see FIG. 7D).

Next, in a process PR8, an insulating film 610 having a plurality of openings 45 is formed (see FIG. 8A). As the formation method of the insulating film 610, the method described in Embodiment 1 can be used. The opening 45 in the insulating film 610 is formed so as to include the region 603 (see FIGS. 1A and 8A).

Next, the light-emitting layer 606 is formed in Step PR9, and the conductive film 608 is formed over the light-emitting layer 606 in Step PR10 (see FIG. 8B). Next, the substrate over which the colored films CF_1, CF_2, and CF_3 are formed is bonded to the substrate over which the display element 602 is formed using the bonding layer 564 (see FIG. 8C). Through such a process, the display panel 500 can be manufactured.

At least part of the structure of this embodiment can be implemented in combination with any of the other embodiments as appropriate.

(Embodiment 4)
In this embodiment, a display panel that can be used for the display device of one embodiment of the present invention will be described.

As the display element included in the display panel of one embodiment of the present invention, the display element 602 described as the display element in Embodiment 1 can be used.

FIG. 10 is a top view of a display panel of one embodiment of the present invention.

FIG. 11 is a block diagram illustrating a structure of a display panel of one embodiment of the present invention.

12A and 12B are circuit diagrams illustrating a structure of a pixel circuit included in the display panel of one embodiment of the present invention, and FIG 12C is a timing chart.

FIG. 13 is a top view illustrating a pixel structure of a display panel of one embodiment of the present invention.

14A and 14B are top views illustrating a structure of a pixel of a display panel of one embodiment of the present invention.

FIG. 15 is a cross-sectional view of a display panel of one embodiment of the present invention.

16A and 16B are a top view and a cross-sectional view of a transistor that can be used for the display panel of one embodiment of the present invention, respectively.

17A and 17B are cross-sectional views illustrating a method for manufacturing a transistor that can be used for the display panel of one embodiment of the present invention.

18A and 18B are a top view and a cross-sectional view of a transistor that can be used for the display panel of one embodiment of the present invention, respectively.

<Display panel display method>
The display panel 500 of one embodiment of the present invention performs display by an analog gray scale method. The video signal is supplied to the pixel as an analog signal. In the pixel of the display panel 500, a driving transistor controls and supplies a current corresponding to the gray level of the video signal to the display element (see FIGS. 10 and 12A).

In the display panel 500, if there are variations in the characteristics of the driving transistors, variations in display luminance occur, and color reproducibility deteriorates.

The display panel 500 has an analog gray scale display method, and has a means for correcting the variation in characteristics of the drive transistor, so that the correction works to improve the variation in display luminance, and color reproducibility, visibility, and reliability. Can be improved.

<Drive circuit, wiring, FPC>
The display panel 500 described in this embodiment includes driver circuits 514A and 514B (see FIGS. 10 and 11). The driver circuits 514A and 514B can also be referred to as gate driver circuits.

The display panel 500 includes terminals 516_1 to 516_4. The terminals 516_1 and 4 are connected to the drive circuit 514A, and the terminals 516_2 and 3 are connected to the drive circuit 514B.

The display panel 500 includes terminals 518_1 to 518_12.

The display panel 500 includes a wiring 552, a wiring 554, a wiring 556, a wiring 557, and a wiring 558 (see FIGS. 11 and 12A). The display panel 500 includes a display area 512.

The wiring 552 can be referred to as a gate wiring. The wiring 552 connects the driver circuit 514A or the driver circuit 514B to the pixel 502.

The wiring 554 can be referred to as a signal line. The wiring 554 connects any of the terminals 518_1 to 518_12 to the pixel 502.

The wiring 556 can be referred to as an anode line. The wiring 556 connects the driver circuit 514A or 514B and the pixel 502. In the display region 512, the same potential is applied to the wiring 556.

The wiring 557 can be rephrased as a cathode line. The wiring 556 connects the driver circuit 514A or the driver circuit 514B to the pixel 502. In the display region 512, the same potential is applied to the wiring 557.

The wiring 558 can be called a monitor wiring. The wiring 558 connects any of the terminals 518_1 to 518_12 to the pixel 502.

<Display area 512, pixel 502>
The display panel 500 includes a plurality of pixels 502 in a display region 512 (see FIGS. 10 and 11). In the display area 512, n pixels are arranged in the R direction, and m pixels are arranged in the C direction. That is, the pixels 502 are arranged in a grid pattern. The number of pixels 502 included in the display area 512 is equal to m × n.

i is an arbitrary integer from 1 to m, and j is an arbitrary integer from 1 to n. When a1 is an integer in the range of 1 to m, and a2 is an integer in the range of 1 to n, the set of pixels 502 (i, a2) is the pixel 502 in the i row, pixel 502 (a1, j ) Can be referred to as j columns of pixels 502, respectively.

The pixels 502 (i, 1) to 502 (i, n) are all connected to the wiring 552 (i).

The pixels 502 (1, j) to 502 (m, j) are all connected to the wiring 554 (j).

When i is an odd number, the pixels 502 (i, 1) to (i, n) and the pixels 502 (i + 1, 1) to (i + 1, n) are all connected to the wiring 558 (i). In other words, two pixels adjacent in the R direction have a portion connected to the same wiring 558.

<Drive circuits 514A and 514B>
The drive circuits 514A and 514B function as gate drivers and supply selection signals to the plurality of wirings 552, respectively (see FIGS. 10 and 11). Based on the selection signal, the pixel 502 is determined for each row to be in a selected state or a non-selected state. The drive circuits 514A and 514B include a shift register, a level shifter, and a buffer circuit.

The frequency of image rewriting can be represented by a frame frequency. For example, if the frame frequency is 30 Hz, the image is rewritten 30 times per second. Thus, the drive circuits 514A and 514B can supply the selection signal to each pixel at a predetermined frequency.

For example, the drive circuits 514A and 514B have a function of supplying a selection signal to one scan line at a frequency of 30 Hz or higher, preferably 60 Hz or higher. Thus, by driving at a high frame frequency, a moving image can be displayed smoothly.

On the other hand, the drive circuits 514A and 514B have a function of supplying a selection signal to one scanning line at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once per minute. A driving method that operates at such a low frame frequency can be called idling stop (IDS) driving.

Idling stop (IDS) driving refers to a driving method in which image data rewriting is stopped after execution of image data writing processing. Once the image data is written and then the interval until the next image data is written is extended, the power consumption required for writing the image data during that time can be reduced. Alternatively, a still image can be displayed in a state where flicker is suppressed. As a result, fatigue accumulated in the user of the information processing apparatus can be reduced.

Idling stop driving with an extremely small frame frequency can be realized by using a transistor to which a metal oxide is applied as a transistor included in the pixel portion. A transistor in which a metal oxide is applied to a semiconductor film in which a channel is formed has extremely low leakage current (off-state current) in a non-conduction state. It can be held for a long time.

<Terminal 516>
The display device supplies a signal, a voltage, and a current to the driver circuit 514A and the driver circuit 514B through the terminals 516_1 to 516_4.

The display device can supply predetermined voltage and current to the wiring 556 through the terminals 516_1 to 516_4 (see FIG. 11). Similarly, predetermined voltage and current can be supplied to the wiring 557.

<Terminal 518>
The display device can supply a signal based on image data, a predetermined voltage, and a current to the terminals 518_1 to 518_12. A bare chip having a function as a source driver can be mounted on the terminals 518_1 to 518_12 by COG.

In the display panel 500, a source driver may be provided using TCP or COF (Chip on Film).

The source driver mounted on the terminals 518_1 to 518_12 supplies a signal (video signal) based on the image data to each pixel 502 through the wiring 554.

<Pixel circuit>
Elements of a pixel circuit included in the pixel 502 (i, j) include a transistor M1 (i, j), a transistor M2 (i, j), a transistor M3 (i, j), and a capacitor portion 614 (i, j) ( (See FIG. 12A). The pixel circuit is connected to the display element 602 (i, j).

In each of the transistor M1 (i, j), the transistor M2 (i, j), and the transistor M3 (i, j), the gate electrode is connected to the back gate electrode.

A gate electrode of the transistor M1 (i, j) is connected to the wiring 552 (i). The first electrode or the first conductive film of the transistor M1 (i, j) is connected to the wiring 554 (j). The second electrode or the second conductive film of the transistor M1 (i, j) is connected to the gate electrode of the transistor M2 (i, j).

In this embodiment, when i is an odd number, k = (i + 1) / 2, and when i is an even number, k = i / 2.

A gate electrode of the transistor M2 (i, j) is connected to one electrode of the capacitor 614 (i, j). The first electrode or the first conductive film of the transistor M2 (i, j) includes one electrode of the display element 602 (i, j), the other electrode of the capacitor portion 614 (i, j), and the transistor M3. It is connected to the first electrode or the first conductive film of (i, j). The second electrode or the second conductive film of the transistor M2 (i, j) is connected to the wiring 556.

A gate electrode of the transistor M3 (i, j) is connected to the wiring 552 (i). The second electrode or the second conductive film of the transistor M3 (i, j) is connected to the wiring 558 (k).

The other electrode of the display element 602 (i, j) is connected to the wiring 557. Note that one electrode of the display element 602 (i, j) can be a positive electrode and the other electrode can be a negative electrode. The transistor M3 (i, j) has a function of connecting one electrode of the display element 602 (i, j) to the wiring 558 (k).

Transistor M1 (i, j) can be referred to as a switching transistor. The transistor M2 (i, j) can be referred to as a drive transistor. Transistor M3 (i, j) can be referred to as a monitor transistor.

The element of the pixel circuit included in the pixel 502 (i, j) described in this embodiment is one of a conductive film (or wiring), a transistor, a diode, a resistor, a capacitor, and a conductive film that connect the elements. Or may be added in combination. For example, the pixel circuit may include four or more transistors.

<Wiring 558, circuit 616>
The pixel 502 (i, j) is connected to the node N1 of the circuit 616 through the wiring 558 (k) (see FIGS. 12A and 12B). The circuit 616 can be provided, for example, between the display region 512 and the terminal 518 (see FIG. 11). Alternatively, a bare chip may be mounted on the terminals 518_1 to 518_12. Alternatively, it may be provided using TCP or COF (Chip on Film).

The circuit 616 can detect a signal supplied from the pixel 502 (i, j) through the wiring 558 (k). The circuit 616 is an integrating circuit including an operational amplifier AM, a capacitor C1, and a switch SW. Since the signal of the pixel 502 (i, j) is detected, the circuit 616 is also referred to as a monitor circuit.

The display device has a correction circuit. The display device can analyze the signal supplied from the circuit 616 and correct the characteristic variation of the driving transistor included in the display panel 500 using the correction circuit. The display panel 500 can obtain higher color reproducibility by correcting the characteristic variation of the driving transistor. A method of correcting the characteristic variation of the driving transistor will be described in a later section.

<Examples of components of display panel 500>
FIG. 13 is a top view illustrating the arrangement of the elements of the pixel circuit of the pixel 502 (i, j), the pixel 502 (i, j + 1), and the pixel 502 (i, j + 2). 14A and 14B are top views showing the arrangement of elements of the pixel circuit of the pixel 502 (i, j).

15 is a cross-sectional view of a cut surface taken along the alternate long and short dash line X1-X2, between X3-X4, between X5-X6, and between X7-X8 shown in FIG.

In FIG. 10, an alternate long and short dash line X5-X6 overlaps with the semiconductor film of the transistor MD provided in the drive circuit 514A. The alternate long and short dash line X7-X8 overlaps with the semiconductor film of the transistor M2 provided in the pixel 502 (i, j).

The dashed-dotted line X7-X8 shown in FIG. 10 and the dashed-dotted line X7-X8 shown in FIG. 13 show the same location.

The display panel 500 includes a substrate 504 and a substrate 506.

The display panel 500 includes a transistor MD, a transistor M1, a transistor M2, a transistor M3, and a capacitor portion 614.

The display panel 500 includes an insulating film 538A, an insulating film 538B, and an insulating film 539.

In addition, the display panel 500 includes an opening 542 and an opening 544.

In addition, the display panel 500 includes a conductive film 546.

The display panel 500 includes a sealing material 566 and a bonding layer 564.

The display panel 500 includes a coloring film CF, a light shielding film 562, and an insulating film 610.

In addition, the display panel 500 includes a terminal 516 and a terminal 518.

The display panel 500 includes a display element 602 (see FIG. 15).

Below, description of each component is shown.

<Substrate 504, 506>
The same material as the substrate 506 described in Embodiment 1 can be used.

For example, a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate made of silicon germanium, an SOI (Silicon On Insulator) substrate, or the like can be used. Further, for example, a substrate in which a semiconductor element is provided over these substrates can be used for the substrate 506.

<Transistors MD, M1, M2, M3>
For example, a bottom-gate transistor, a top-gate transistor, or a transistor having a gate electrode and a back gate electrode can be used.

For example, a TGSA transistor or a BGTC transistor, which will be described later, can be used.

<Capacitance unit 614>
The capacitor 614 (i, j) is a portion where the conductive film 522_2B (i, j) and the conductive film 524B_2 (i, j) overlap. (See FIGS. 12A, 13, and 15).

<Insulating Film 538A, Insulating Film 538B>
The insulating films 538A and 538B function as a flattening film for flattening a step generated by a structure provided therebelow.

For example, an organic material having heat resistance such as polyimide, acrylic resin, benzocyclobutene resin, polyamide, or epoxy resin can be used. In addition to the organic material, a low dielectric constant material (low-k material), a siloxane resin, PSG (phosphorus glass), BPSG (phosphorus boron glass), or the like can be used. Note that a plurality of insulating layers formed using these materials may be stacked.

For example, the insulating films 538A and 538B can be formed using acrylic having a thickness of 2 μm.

The upper surfaces of the insulating films 538A and 538B may be flattened by a flattening process using a CMP method or the like in order to improve flatness.

<Insulating film 539>
The insulating film 539 is sandwiched between the insulating film 534 and the insulating film 538A.

When the semiconductor film 520 is formed using a metal oxide, if an impurity (typically, water, hydrogen, or the like) is diffused in the semiconductor film 520, the conductivity of the semiconductor film 520 is increased, and the reliability of the transistor is increased. Lower. When an organic resin is used for the insulating film 538A, the insulating film 539 preferably has a function of suppressing entry of water or hydrogen.

For example, a silicon nitride film with a thickness of 100 nm formed by PECVD can be used for the insulating film 539. A silicon nitride film formed by PECVD is preferable because a high film density can be easily obtained. Note that a silicon nitride film formed by PECVD may have a high hydrogen concentration in the film.

For example, an aluminum oxide film, an aluminum oxynitride film, or an aluminum nitride oxide film can be used for the insulating film 539. In particular, the insulating film 539 is preferably an aluminum oxide film formed by a reactive sputtering method.

<Opening 542, Opening 544>
The opening 542 is provided in the insulating film 538B (see FIG. 15). The conductive film 546 is connected to the conductive film 604 (i, j) through the opening 542 (i, j).

The opening 544 is provided in the insulating film 538A (see FIG. 15). The conductive film 522_2B (i, j) is connected to the conductive film 546 through the opening 544 (i, j).

<Conductive Film 546>
A conductive material can be used for the conductive film 546. The conductive film 546 may be a single layer or a stacked layer.

For example, the conductive film 546 can be formed using a structure in which titanium with a thickness of 100 nm, aluminum with a thickness of 400 nm thereon, and titanium with a thickness of 100 nm are stacked thereover.

<Sealing material 566, bonding layer 564>
The sealing material 566 and the bonding layer 564 have a function of bonding the substrate 504 and the substrate 506 together.

For the sealant 566 and the bonding layer 564, the material described in Embodiment 1 can be used.

<Coloring film CF, light shielding film 562>
For the colored film CF, the materials described in Embodiment 1 can be used. A material that transmits blue light can be used for the pixel 502 (i, j) as the coloring film CF_1.

For the light-blocking film 562, for example, carbon black, titanium black, metal, metal oxide, or a composite oxide containing a solid solution of a plurality of metal oxides can be used.

For example, the light shielding film 562 may be formed by stacking a colored film that transmits blue light, a colored film that transmits green light, and a colored film that transmits red light. At this time, the apparatus for forming the colored film and the light shielding film can be shared, and the process can be simplified.

<Insulating film 610>
The material shown in Embodiment Mode 1 can be used.

<Terminal 516, Terminal 518>
Each of the terminal 516 and the terminal 518 includes a conductive film 532A_F and a conductive film 532B_F (see FIG. 15).

The conductive material 568 can be used to electrically connect the terminal 516 or the terminal 518 and the flexible printed circuit board FPC.

<Display element 602>
The display panel 500 includes a conductive film 604 (i, j), a conductive film 608, and a light-emitting layer 606 (see FIG. 15). In the display element 602 (i, j), the light-emitting layer 606 is sandwiched between the conductive film 604 (i, j) and the conductive film 608.

A conductive film 605 (i, j) may be provided between the conductive film 604 (i, j) and the light-emitting layer 606. The display panel 500_2, the display panel 500_3, and the display panel 500_4 can be referred to for the positions where the conductive films 605 (i, j) are provided (see FIGS. 3, 4A, and 4B).

The display element 602 (i, j) includes a region 603 (i, j). In the region 603 (i, j), the light-emitting layer 606 is in contact with the conductive film 604 (i, j).

The conductive film 604 (i, j) can be formed using a material having reflectivity with respect to visible light and conductivity.

For the conductive film 604 (i, j), for example, silver can be used. Alternatively, an alloy containing silver, a metal material such as aluminum, gold, platinum, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium can be used. In addition, lanthanum, neodymium, germanium, or the like may be added to the metal material or alloy. An alloy containing silver such as an alloy of silver and copper, an alloy of silver, palladium and copper (also referred to as Ag-Pd-Cu or APC), an alloy of silver and magnesium, or the like may be used. An alloy containing silver and copper is preferable because of its high heat resistance. Here, APC is an alloy of silver, palladium and copper made by Furuya Metal Co., Ltd., and its composition is about 98 wt% Ag, about 1 wt% Pd and about 1 wt% Cu. .

The conductive film 604 (i, j) can have high reflectance by using a material containing silver. For example, the conductive film 604 (i, j) can be formed with a thickness of 20 nm to 1 μm by APC.

In the case where the conductive film 604 (i, j) serves as the positive electrode of the light-emitting layer 606, a material having a high work function is preferably used. APC is preferable because silver is contained in the main material, and thus has a large work function and high hole injectability.

In addition to a material containing silver, a metal material such as aluminum, gold, platinum, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium, or an alloy containing these metal materials can be used. . One or more metal films or metal nitride films selected from titanium, tantalum, tungsten, molybdenum, and chromium are not brittle when exposed to an oxidizing atmosphere, and maintain conductivity, so that they are exposed to oxygen plasma. This is a preferred material. In addition, lanthanum, neodymium, germanium, or the like may be added to the metal material or alloy.

Alternatively, an alloy containing aluminum (aluminum alloy) such as an alloy of aluminum and titanium, an alloy of aluminum and nickel, an alloy of aluminum and neodymium, an alloy of aluminum, nickel, and lanthanum (Al-Ni-La) can be used. it can. Furthermore, the oxidation of the aluminum alloy film can be suppressed by stacking a metal film or a metal oxide film in contact with the aluminum alloy film. Examples of the material for the metal film and metal oxide film include titanium and titanium oxide. Alternatively, the conductive film that transmits visible light and a film made of a metal material may be stacked.

When the conductive film 605 is formed between the conductive film 604 (i, j) and the light-emitting layer 606, a material having light transmittance can be used for the conductive film 605. For example, a metal oxide film containing indium and zinc can be used for the conductive film 605. An impurity containing one or more of nitrogen, hydrogen, and fluorine may be added to the conductive film 605.

For the light-emitting layer 606, a stacked material or the like stacked so as to emit white light can be used.

For the light-emitting layer 606, either a low molecular material or a high molecular material can be used. Note that the material for forming the light-emitting layer 606 includes not only an organic compound material but also a structure including an inorganic compound in part. The light emitting layer 606 may have a stacked structure including layers having different functions. For example, in addition to the light emitting layer, functional layers having respective functions such as a hole injection layer, a hole transport layer, a carrier blocking layer, an electron transport layer, and an electron injection layer can be appropriately combined. In addition, you may include the layer which has two or more functions which each layer has simultaneously.

In addition, the light-emitting layer 606 can be formed by any of a wet method and a dry method such as an evaporation method, an inkjet method, a spin coating method, a dip coating method, and a nozzle printing method.

As the conductive film 608 (i, j), for example, a film having a visible light reflectance of 20% to 80%, preferably 40% to 70% can be used. The conductive film 608 can be formed using the same material as the conductive film 604 (i, j). For example, when APC is used as a material, the film thickness can be 5 nm to 30 nm, typically 15 nm.

Thus, the display element 602 (i, j) in which the conductive film 604 (i, j), the insulating film 610 covering the end portion of the conductive film 604 (i, j), the light emitting layer 606, and the conductive film 608 are stacked is formed. can do. Note that one of the conductive film 604 (i, j) and the conductive film 608 is used as an anode and the other is used as a cathode.

In this embodiment mode, the conductive film 604 (i, j) is used as the anode of the display element. The light-emitting layer 606 has a structure in which a hole injection layer, a hole transport layer, a light-emitting layer, and an electron injection layer are stacked in that order from the conductive film 604 (i, j) side. Various materials can be used for the light emitting layer. For example, a fluorescent compound that emits fluorescence or a phosphorescent compound that emits phosphorescence can be used.

<Constituent elements of transistor>
The transistor MD, the transistor M1, the transistor M2, and the transistor M3 can have a common semiconductor film. Alternatively, they can have a common configuration. Alternatively, they can be formed in the same process.

13 to 15 illustrate an example of a display panel 500 having a TGSA transistor.

For example, a transistor including the semiconductor film 520_D, the insulating film 526, the insulating film 528_D, and the insulating film 534, the conductive film 522_DA, the conductive film 522_DB, the conductive film 530_D, the conductive film 524A_D, and the conductive film 524B_D is used for the transistor MD. (See FIG. 15).

The transistor MD may include a conductive film 532A_DA, a conductive film 532B_DA, a conductive film 532A_DB, and 532B_DB.

<Semiconductor film 520>
For example, a semiconductor containing a Group 14 element can be used for the semiconductor film 520. Specifically, a semiconductor containing silicon can be used for the semiconductor film 520. For example, a transistor in which single crystal silicon, polysilicon, microcrystalline silicon, amorphous silicon, or the like is used for the semiconductor film 520 can be used.

For example, a metal oxide can be used for the semiconductor film 520. Specifically, a metal oxide containing indium or a metal oxide containing indium, zinc, and an element M (the element M is aluminum, gallium, yttrium, or tin) can be used for the semiconductor film 520.

A pixel circuit including a transistor using a metal oxide for the semiconductor film 520 can have a longer time for holding an image signal than a pixel circuit including a transistor using an amorphous silicon as a semiconductor film.

<Insulating Film 526, Insulating Film 528>
The insulating film 526 functions as a gate insulating film using the conductive films 524A and 524B as gate electrodes (see FIGS. 13 and 15). The insulating film 528 functions as a gate insulating film using the conductive film 530 as a gate electrode.

When metal oxide is used for the semiconductor film 520, the insulating film 526 and the insulating film 528 preferably include oxygen. The insulating film 526 and the insulating film 528 more preferably contain excess oxygen. Oxygen in the insulating film 526 and the insulating film 528 is supplied to the semiconductor film 520 at the time of heat treatment after the insulating film 528 is formed, and the resistivity of the semiconductor film 520 is increased by reducing oxygen vacancies in the semiconductor film 520. be able to.

For example, a silicon nitride film with a thickness of 400 nm and a silicon oxynitride film with a thickness of 200 nm can be stacked and used for the insulating film 526.

For example, a 150-nm-thick silicon oxynitride film can be used for the insulating film 528.

<Insulating film 534>
The insulating film 534 has the same function as the insulating film 539. Note that the insulating film 534 is sandwiched between the conductive films 532 and 522.

For example, a silicon nitride film or a silicon nitride oxide film formed by a PECVD method can be used for the insulating film 534.

For example, a structure in which a silicon nitride film with a thickness of 100 nm and a silicon nitride oxide film with a thickness of 300 nm are stacked may be employed.

<Conductive film 522_DA, conductive film 522_DB>
FIG. 13 illustrates a conductive film 522_DA that functions as a first conductive film of the transistor MD, and a conductive film 522_1A (i, j) that functions as a first conductive film of the transistor M1 (i, j). The conductive film 522_2A (i, j) functioning as the first conductive film of the transistor M2 (i, j) and the conductive film 522_3A functioning as the first conductive film of the transistor M3 (i, j) (I, j) is indicated.

The conductive film 522_DB having a function as the second conductive film of the transistor MD, the conductive film 522_1B (i, j) having a function as the second conductive film of the transistor M1 (i, j), and the transistor M2 The conductive film 522_2B (i, j) functioning as the second conductive film of (i, j) and the conductive film 522_3B (i, j) functioning as the second conductive film of the transistor M3 (i, j) j).

For example, in the case where the semiconductor film 520 is formed using a metal oxide, the conductive films 522_DA and 522DB are formed using the same metal oxide as the semiconductor film 520 and an impurity containing one or more of nitrogen, hydrogen, and fluorine. Can be formed.

When an impurity element containing one or more of nitrogen, hydrogen, and fluorine is added to the metal oxide film, a bond between the metal element and oxygen in the metal oxide film is cut, so that an oxygen vacancy is formed. Alternatively, when an impurity element is added to the metal oxide film, oxygen bonded to the metal element in the metal oxide film is bonded to the impurity element, and oxygen is released from the metal element, so that an oxygen vacancy is formed. . As a result, the carrier density in the metal oxide film is increased and the conductivity is increased.

By using the conductive film 530_D and the insulating film 528_D as masks, an impurity is implanted into the semiconductor film formed over the substrate using an ion implantation apparatus, an ion doping apparatus, or a plasma treatment apparatus, so that the conductive films 522_DA and 522_DB are implanted. Can be formed. A method for forming the conductive films 522_DA and 522_DB will be described later.

<Conductive Film 530, Conductive Film 524>
FIG. 13 shows a conductive film 530_D functioning as the gate electrode of the transistor MD, a conductive film 530_1 (i, j) functioning as the gate electrode of the transistor M1 (i, j), and a gate electrode of the transistor M2. And a conductive film 530_3 (i, j) having a function as a gate electrode of the transistor M3.

In addition, the conductive films 524A_D and 524B_D having a function as a back gate electrode of the transistor MD, and the conductive films 524A_1 (i, j) and the conductive film 524B_1 having a function as a back gate electrode of the transistor M1 (i, j). (I, j), the conductive film 524A_2 (i, j) and the conductive film 524B_2 (i, j) functioning as a back gate electrode of the transistor M2 (i, j), and the transistor M3 (i, j) A conductive film 524A_3 (i, j) and a conductive film 524B_3 (i, j) each functioning as a back gate electrode are shown.

For the conductive film 530, a metal oxide film containing indium, gallium, and zinc to which an impurity containing one or more of nitrogen, hydrogen, and fluorine is added can be used, for example.

As the conductive film 524A, for example, a tantalum nitride film with a thickness of 10 nm can be used. As the conductive film 524B, for example, a copper film with a thickness of 300 nm can be used.

<Conductive Film 532A, Conductive Film 532B>
FIG. 15 illustrates a conductive film 532A_DA and a conductive film 532B_DA that function as the first electrode of the transistor MD, and a conductive film 532A_DB and a conductive film 532B_DB that function as the second electrode of the transistor MD. .

A conductive material can be used for the wiring or the like. Specifically, a conductive material can be used for the conductive films 532A and 532B.

For the conductive films 532A and 532B, an inorganic conductive material, an organic conductive material, a metal, conductive ceramics, or the like can be used, for example.

For example, a metal element selected from aluminum, gold, platinum, silver, copper, chromium, tantalum, titanium, molybdenum, tungsten, nickel, iron, cobalt, palladium, or manganese is used for the conductive films 532A and 532B. Can do. Alternatively, an alloy containing the above metal element can be used for the conductive films 532A and 532B. In particular, an alloy of copper and manganese is suitable for fine processing using a wet etching method.

The conductive film 532A is in contact with the conductive film 522. The conductive film 532A is sandwiched between the conductive film 522 and the conductive film 532B.

The conductive film 532A is preferably formed using titanium, titanium nitride, tantalum, tantalum nitride, or the like. The conductive film 532B is preferably formed using aluminum, gold, platinum, silver, copper, tungsten, or the like.

A conductive film using the same material as the conductive film 532A may be formed over the conductive film 532B, and a total of three layers may be stacked. For example, a structure in which titanium with a thickness of 50 nm, aluminum with a thickness of 400 nm, and titanium with a thickness of 100 nm are stacked can be used as the first electrode or the second electrode of the transistor.

For example, a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, or zinc oxide to which gallium is added can be used for the conductive films 532A or 532B.

At least part of the structure of this embodiment can be implemented in combination with any of the other embodiments as appropriate.

(Embodiment 5)
In this embodiment, transistors that can be included in the display panel 500 are described.

The transistors M1 to M3 included in the pixel 502 and the transistors included in the driver circuits 514A and 514B can have the same structure (see FIGS. 10 and 12A).

<TGSA type>
For example, the transistor 503A can be used for a driver circuit and a pixel (see FIGS. 16A and 16B).

FIG. 16A is a top view of the transistor 503A, and FIG. 16B corresponds to a cross-sectional view of a cross section taken along dashed-dotted line W1-W2 in FIG. Further, the direction of the alternate long and short dash line W1-W2 may be referred to as a channel length direction.

In FIG. 16A, some components (such as an insulating film functioning as a gate insulating film) of the transistor 503A are omitted in order to avoid complexity.

The transistor 503A includes a substrate 504, a conductive film 524A over the substrate 504, a conductive film 524B over the conductive film 524A, and an insulating film 526 over the substrate 504 and the conductive film 524B. In addition, the semiconductor film 520, the conductive film 522_A, and the conductive film 522_B over the insulating film 526, the insulating film 528 over the semiconductor film 520, the conductive film 530 over the insulating film 528, the insulating film 526, the conductive film 522_A, and the conductive film An insulating film 534 is provided over the film 530 and the conductive film 522_B.

The insulating film 534 includes an opening 536_A, and the conductive film 532A_A that is electrically connected to the conductive film 522_A through the opening 536_A is provided over the insulating film 534. The insulating film 534 includes an opening 536_B, and the conductive film 532A_B that is electrically connected to the conductive film 522_B through the opening 536_B is provided over the insulating film 534.

A conductive film 532B_A is provided over the conductive film 532A_A. A conductive film 532B_B is provided over the conductive film 532A_B.

A method for forming the conductive films 530, 522_A, 522_B, and the semiconductor film 520 using a metal oxide will be described with reference to FIGS.

First, a metal oxide film 519 is formed over the insulating film 526 (see FIG. 17A). The metal oxide film 519 can be formed using a metal oxide containing indium, zinc, and gallium with a thickness of 40 nm. The metal oxide can be deposited by sputtering using argon and oxygen as deposition gases.

Next, an insulating film 528 and a metal oxide film 529 thereon are formed (see FIG. 17B).

The insulating film 528 can be formed using silicon oxynitride having a thickness of 150 nm. The silicon oxynitride can be formed by a plasma enhanced chemical vapor deposition (PECVD) method.

As the metal oxide film 529, a metal oxide containing indium, zinc, and gallium with a thickness of 100 nm can be used. The metal oxide can be deposited by sputtering using argon and oxygen as deposition gases.

By using a deposition gas containing oxygen at the time of forming the metal oxide film 529, the insulating film 528 can contain oxygen excessively. By performing heat treatment later, oxygen can be effectively supplied from the insulating film 528 to the semiconductor film 520.

Next, an impurity 521 containing one or more of nitrogen, hydrogen, and fluorine is added to the metal oxide film 519 using the metal oxide film 529 and the insulating film 528 as masks. At this time, the impurity 521 is added to the metal oxide film 529 and the metal oxide film 529 to increase the carrier density, so that the conductive film 530, the conductive film 522_A, and the conductive film 522_B with high conductivity are formed. (FIG. 17C).

The addition of the impurity 521 can be performed using an ion implantation apparatus, an ion doping apparatus, or a plasma processing apparatus.

Since the conductive films 522_A and 522_B are formed using the metal oxide film 529 and the insulating film 528 as masks, it can be said that they are formed in a self-alignment manner.

In the metal oxide film 519, a region overlapping with the insulating film 528 is not added with an impurity and a semiconductor film 520 is formed.

The transistor 503A may be referred to as a TGSA (Top Gate Self Align) type FET from the position of the conductive film 530 with respect to the semiconductor film 520 or the formation method of the conductive films 522_A and B.

<BGTC type>
For example, the transistor 503B can be used for a driver circuit and a pixel (see FIGS. 18A and 18B).

18A is a top view of the transistor 503B, and FIG. 18B corresponds to a cross-sectional view of a cross section taken along dashed-dotted line W3-W4 in FIG. 18A.

In FIG. 18A, some components (such as an insulating film serving as a gate insulating film) of the transistor 503B are omitted in order to avoid complexity. Further, only the outline of the semiconductor film 520 is shown.

The transistor 503B includes a substrate 504, a conductive film 524A over the substrate 504, a conductive film 524B over the conductive film 524A, and an insulating film 526 over the substrate 504 and the conductive film 524B. In addition, the semiconductor film 520 over the insulating film 526 is provided.

In addition, the conductive film 532A_A over the insulating film 526 and the semiconductor film 520 is provided. The conductive film 532A_B over the insulating film 526 and the semiconductor film 520 is provided. A conductive film 532B_A is provided over the conductive film 532A_A. A conductive film 532B_B is provided over the conductive film 532A_B.

An insulating film 534 is provided over the semiconductor film 520, the conductive film 532B_A, and the conductive film 532B_B. A conductive film 530 is provided over the insulating film 534.

The transistor 503B is a BGTC (Bottom Gate Top Contact) type from the position of the conductive films 524A and 524B with respect to the semiconductor film 520 and the positions of the conductive films 532A_A, 532B_A, 532A_B, and 532B_B with respect to the semiconductor film 520. May be referred to as FET.

At least part of the structure of this embodiment can be implemented in combination with any of the other embodiments as appropriate.

(Embodiment 6)
In this embodiment mode, a display method of the pixel 502 of the display panel 500 and a method for correcting variation in characteristics of the driving transistor will be described.

The display device uses the correction circuit and the circuit 616 to correct the characteristic variation of the driving transistor.

FIG. 12C is a timing chart for explaining display and variation correction in the j column of the pixels 502. In the pixel 502 (i, j), writing and display of the video signal to the pixel is performed through the periods P1 and P2, and variation correction is performed through the period P3 (FIGS. 12A and 12B). )reference).

Hereinafter, operations of the pixels in the periods P1, P2, and P3 will be described. Note that in this embodiment, the transistor included in the pixel 502 is n-type.

<Period P1>
In the period P1, a video signal writing operation to the pixel is performed. In the period P1, no current flows through the display element 602 (i, j).

In the period P1, the voltage of the wiring 552 (i) is set high, so that the transistors M1 (i, j) and M3 (i, j) are turned on. In addition, the switch SW of the circuit 616 is turned on.

At this time, the potential V _da is applied to the wiring 554. The potential V _da has a value corresponding to the gradation of the video signal. FIG. 12C illustrates a signal input to the wiring 554 (j) and the wiring 552 (i). In FIG. 12C, V _da (i) and V _da (i + 1) represent data signals V _da input to the pixels 502 in the i-th row and the i + 1-th row, respectively.

Since the transistor M1 (i, j) is on, the gate electrode of the transistor M2 (i, j), the potential _{V da} wiring 554 (j) is given.

Note that the voltage V _ano , the voltage V ₀ , and the voltage V _cat applied to the wiring 557 are preferably set so as to satisfy the following formulas (1) to (3). In the following equation, the voltage V _thE is the threshold voltage of the display element 602 (i, j), and the voltage V _th2 is the threshold voltage of the transistor M2. For example _{V ano} is a 14 _{V, V cat} can be -1 V.

Since the operational amplifier AM of the circuit 616 functions as a voltage follower circuit, the potential of the wiring 558 (k) is V ₀ . Therefore, the voltage between the gate electrode of M2 and the first wiring is V _da −V ₀ . Further, all current flowing through the semiconductor film of the transistor M2 (i, j) flows through the wiring 558 (k).

<Period P2>
In the period P2, the display element 602 (i, j) is displayed.

In the period P2, the voltage of the wiring 552 is set to a low level. At this time, the transistor M1 (i, j) and the transistor M3 (i, j) are turned off, and the voltage (V _da −V ₀ ) between the gate electrode of the transistor M2 (i, j) and the first wiring is set. A corresponding current flows through the display element 602 (i, j).

<Period P3>
In the period P3, the drain current of the transistor M2 is acquired.

In the period P3, the voltage of the wiring 552 is set high. At this time, the transistor M1 (i, j) and the transistor M3 (i, j) are turned on.

In the state where the switch SW of the circuit 616 is turned on, the potential V _da is applied to the wiring 554. Next, the switch SW is turned off. Between the time t after turning off the switch SW, the current I _da flowing through the node N1, the voltage V _{0 of the} node N2, the capacitance value C ₁ of the capacitor C1, and the voltage V _out of the node N3, A relationship is established. When the measured value of the voltage V _out is obtained, I _da can be calculated from the equation (4).

Here, the above procedure is performed when the potential V _da1 is _applied to the wiring 554, and a current I _da1 flowing through the node N1 is obtained. Similarly, when the potential V _da2 is applied to the wiring 554, the above procedure is performed to obtain a current I _da2 flowing through the node N1. The threshold voltage V _th of the transistor M2 (i, j) is obtained by Equation 5.

If the channel width W, the channel length L, and the gate capacitance C _ox are used, the mobility μ of the transistor M2 (i, j) can be obtained by Expression 6.

The display device includes a correction circuit that calculates the threshold voltage V _th and the mobility μ and corrects the correspondence between the potential V _da of the wiring 554 (j) and the gradation of the video signal. The display device can improve the color reproducibility, visibility, and reliability of the display panel 500 even if the characteristics of the transistor M2 (i, j) vary.

It is not always necessary to provide the period P3 after the periods P1 and P2. For example, the period P3 can be provided after the period P1 and the period P2 are repeated a plurality of times. In addition, after the period P3, the display element 602 (i, j) is written to the pixel 502 (i, j) by writing a data signal corresponding to the minimum gradation value 0 to the display element 602 (i, j). It may be in a light emitting state.

The display panel 500 includes the transistor M3 (i, j) and the monitor wiring, and includes a colored film described in other embodiments, whereby higher color reproducibility can be obtained.

<Pixel Configuration Example 7>
FIG. 19 is a circuit diagram illustrating a structure of a pixel circuit included in the display panel 500_5 of one embodiment of the present invention. The display panel 500_5 may have a structure in which the pixel circuit does not include M3 and the wiring 558.

The display panel 500_5 performs pixel display in the pixel 502 (i, j) by repeating the periods P1 and P2. In the period P1, a video signal writing operation to the pixel is performed. Next, in the period P2, the display element 602 (i, j) is displayed.

At least part of the structure of this embodiment can be implemented in combination with any of the other embodiments as appropriate.

(Embodiment 7)
In this embodiment, a structure of an information processing device of one embodiment of the present invention will be described with reference to FIGS.

20 and 21 are diagrams illustrating a configuration of an information processing device of one embodiment of the present invention. 20A is a block diagram of the information processing apparatus, and FIGS. 20B to 20E are perspective views illustrating the configuration of the information processing apparatus. FIGS. 21A to 21E are perspective views illustrating the configuration of the information processing apparatus.

<Information processing device>
An information processing device 5200B described in this embodiment includes an arithmetic device 5210 and an input / output device 5220 (see FIG. 20A).

The arithmetic device 5210 has a function of supplying operation information and a function of supplying image information based on the operation information.

The input / output device 5220 includes a display unit 5230, an input unit 5240, a detection unit 5250, a communication unit 5290, a function of supplying operation information, and a function of supplying image information. The input / output device 5220 has a function of supplying detection information, a function of supplying communication information, and a function of supplying communication information.

As the display portion 5230, the display panel described in any of the other embodiments can be used.

The input unit 5240 has a function of supplying operation information. For example, the input unit 5240 supplies operation information based on the operation of the user of the information processing apparatus 5200B.

Specifically, a keyboard, hardware buttons, a pointing device, a touch sensor, a voice input device, a line-of-sight input device, or the like can be used for the input unit 5240.

The display unit 5230 has a function of displaying a display panel and image information. For example, the display panel described in Embodiment 1 can be used for the display portion 5230.

The detection unit 5250 has a function of supplying detection information. For example, it has a function of detecting the surrounding environment where the information processing apparatus is used and supplying it as detection information.

Specifically, an illuminance sensor, an imaging device, a posture detection device, a pressure sensor, a human sensor, or the like can be used for the detection unit 5250.

The communication unit 5290 has a function for supplying communication information and a function for supplying communication information. For example, a function of connecting to another electronic device or a communication network by wireless communication or wired communication is provided. Specifically, it has functions such as wireless local area communication, telephone communication, and short-range wireless communication.

<Configuration example 1 of information processing apparatus>
For example, an outer shape along a cylindrical column or the like can be applied to the display portion 5230 (see FIG. 20B). In addition, it has a function of changing the display method according to the illuminance of the usage environment. It also has a function of detecting the presence of a person and changing the display content. Thereby, it can install in the pillar of a building, for example. Alternatively, an advertisement or a guide can be displayed. Alternatively, it can be used for digital signage and the like.

<Configuration Example 2 of Information Processing Device>
For example, a function of generating image information based on a locus of a pointer used by the user is provided (see FIG. 20C). Specifically, a display panel having a diagonal line length of 20 inches or more, preferably 40 inches or more, more preferably 55 inches or more can be used. Alternatively, a plurality of display panels can be arranged and used for one display area. Alternatively, a plurality of display panels can be arranged and used for a multi-screen. Thereby, it can use for an electronic blackboard, an electronic bulletin board, an electronic signboard, etc., for example.

<Configuration Example 3 of Information Processing Device>
For example, a function of changing a display method according to the illuminance of the usage environment is provided (see FIG. 20D). Thereby, for example, the power consumption of the smart watch can be reduced. Alternatively, for example, an image can be displayed on the smart watch so that the image can be suitably used even in an environment with strong outside light such as outdoors on a sunny day.

<Configuration Example 4 of Information Processing Device>
The display portion 5230 includes, for example, a curved surface that bends gently along the side surface of the housing (see FIG. 20E). Alternatively, the display unit 5230 includes a display panel, and the display panel has a function of displaying on the front surface, the side surface, and the upper surface, for example. Thereby, for example, image information can be displayed not only on the front surface of the mobile phone but also on the side surface and the upper surface.

<Configuration Example 5 of Information Processing Device>
For example, a function of changing a display method according to the illuminance of the usage environment is provided (see FIG. 21A). Thereby, the power consumption of a smart phone can be reduced. Alternatively, for example, an image can be displayed on a smartphone so that it can be suitably used even in an environment with strong external light such as outdoors on a sunny day.

<Configuration Example 6 of Information Processing Device>
For example, a function of changing a display method according to the illuminance of the usage environment is provided (see FIG. 21B). Thereby, an image can be displayed on the television system so that it can be suitably used even when it is exposed to strong external light that is inserted indoors on a sunny day.

<Configuration Example 7 of Information Processing Device>
For example, a function of changing a display method according to the illuminance of the usage environment is provided (see FIG. 21C). Thereby, for example, an image can be displayed on a tablet computer so that it can be suitably used even in an environment with strong external light such as outdoors on a sunny day.

<Configuration Example 8 of Information Processing Device>
For example, a function of changing a display method according to the illuminance of the usage environment is provided (see FIG. 21D). Thereby, for example, the subject can be displayed on the digital camera so that it can be viewed properly even in an environment with strong external light such as outdoors on a sunny day.

<Configuration Example 9 of Information Processing Device>
For example, a function of changing a display method in accordance with the illuminance of the usage environment is provided (see FIG. 21E). Thereby, for example, an image can be displayed on a personal computer so that it can be suitably used even in an environment with strong external light such as outdoors on a sunny day.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

In this embodiment, color purity is high in the direction 630 perpendicular to the surface of the pixel 502 (i, j) from the display element 602 (i, j) included in the display panel 500_2 which is one embodiment of the present invention. It shows by calculation that blue and red light is emitted (see FIGS. 2A and 3). In addition, light having different angles emitted from the display element 602 (i, j) indicates different colors.

The behavior of light incident on a laminated structure using a plurality of materials having different physical constants such as transmittance and absorption is well understood in the optical field.

If the thickness (t) and refractive index wavelength dispersion (n) of each layer in the laminated structure are known, calculating the amount of reflected, absorbed, interfered and transmitted light generated in the laminated structure, The behavior of light incident on the stacked structure can be predicted.

If the wavelength dispersion of thickness and refractive index is known for all layers in the laminated structure, for example, the formulas and methods described in Eugene Hecht “Optics” Addison Wesley, pages 85-140. Can be calculated accurately with reference to. A person skilled in the art can obtain various simulators for performing the calculation, and can calculate the behavior of light incident on the laminated structure.

In this embodiment, the behavior of light incident on the laminated structure was calculated using an organic device simulator (trade name setfos; manufactured by Cybernet System Co., Ltd.), which is one of the simulators. The setfos calculates the spectrum of light reaching the outside of the multilayer structure using the film thickness of each layer in the multilayer structure, the wavelength dispersion of the refractive index of each layer, and the spectrum emitted from the inside of the multilayer structure. Can do.

Specifically, the spectrum of light reaching the bonding layer 564 was calculated by setfos based on the configuration of the pixel 502 (i, j) of the display panel 500_2 and the spectrum emitted from the light emitting layer 606 (FIG. 3). reference). The spectrum of the light was calculated under the condition where the light was emitted in the direction 632 where the angle R was 0 ° to 80 °.

A structure in which the conductive film 605 (i, j), the light-emitting layer 606, the conductive film 608, and the conductive film 609 are stacked was used for the display panel 500_2. The physical properties of each component used for the calculation will be described below.

An oxide conductive film including indium, tin, and silicon with a thickness of 120 nm was used for the conductive film 605 (i, j). In addition, the result measured by the method described later was used for wavelength dispersion of the refractive index of the oxide conductive film containing indium, tin, and silicon.

A light-emitting organic compound having a thickness of 188 nm was used for the light-emitting layer 606. The light emitting layer 606 has a refractive index of 1.8 regardless of the wavelength.

Note that the light-emitting layer 606 emits light including red, green, and blue light. An example of a spectrum of light emitted from the light-emitting layer 606 is illustrated in FIG. The horizontal axis represents the wavelength (nm) of light emitted from the light emitting layer 606, and the vertical axis represents the light intensity. Note that the vertical axis of FIG. 23A is a scale normalized by setting the intensity of light having a wavelength of 455 nm to 1.

APC with a thickness of 200 nm was used for the conductive film 604 (i, j). The refractive index of silver was used as the refractive index of APC.

APC with a thickness of 15 nm was used for the conductive film 608.

An oxide conductive film having a thickness of 70 nm and containing indium, tin, and silicon was used for the conductive film 609. A film having a refractive index of 1.5 was used for the bonding layer 564.

<Measuring method of wavelength dispersion of refractive index of oxide conductive film containing indium, tin, and silicon>
The wavelength dispersion N of the refractive index of the oxide conductive film having a thickness of 100 nm of indium, tin, and silicon was measured and obtained using a spectroscopic ellipsometer UVISEL-FASE (TFT) manufactured by Nihon Electronics Co., Ltd. (FIG. 22). reference). The horizontal axis of FIG. 22 is the wavelength (nm) of light, and the vertical axis is the refractive index.

Note that an oxide conductive film having a thickness of 100 nm and containing indium, tin, and silicon uses a target having 85% In ₂ O ₃ , 10% SnO ₂ , and 5% SiO ₂ by weight ratio. Then, it was formed on the light transmissive substrate by sputtering using argon gas and oxygen gas.

<Calculation result>
FIG. 23B illustrates the calculation result of the spectrum of light reaching the bonding layer 564 in the pixel 502 (i, j). In FIG. 23B, the horizontal axis represents the wavelength (nm) of light reaching the bonding layer 564, and the vertical axis represents the relative intensity (light intensity) of the light.

In FIG. 23B, out of the light reaching the bonding layer 564, the light R0 emitted in the direction 630, the light R30 emitted in the direction 632 when the angle R is 30 °, and the angle R of 60 ° The spectrum of the light R60 emitted in the direction 632 at the time and the light R80 emitted in the direction 632 when the angle R is 80 ° is shown.

Note that the vertical axis in FIG.

The spectrum of the light R0 has emission maximum wavelengths at 455 nm and 661 nm.

The spectrum of the light R0 is narrowed in the wavelength region indicating blue and the wavelength region indicating red, and the light intensity in the wavelength region between blue and red is small.

That is, the display element 602 (i, j) can emit blue light and red light with high color purity in the direction 630.

The spectra of the light R0, the light R30, the light R60, and the light R80 have different emission maximum wavelengths. That is, the light emitted from the display element 602 (i, j) has a different color if the angle when reaching the bonding layer 564 is different.

The structure described in this example can be combined as appropriate with any of the structures described in the other embodiments.

In this embodiment, light emitted from the pixel 502 (i, j) included in the display panel 500_2 (see FIG. 3) which is one embodiment of the present invention has a small chromaticity difference even when the emission angle changes. This is shown by calculation.

Specifically, the difference in chromaticity of light emitted from the display element 602 (i, j) and passing through the colored film CF_1 and emitted in the direction 630 and the direction 632 was calculated (FIG. 2). (See (A)). In addition, it was calculated whether the chromaticity changes depending on the transmission spectrum of the colored film CF_1.

The chromaticity is calculated by setting the spectrum of light emitted from the display element 602 (i, j) calculated in Example 1 (see FIG. 23B) and the transmission spectrum of the colored film CF_1. Made with.

The colored film 702, the colored film 704, the colored film 706, or the colored film 708 was used for the calculation (FIG. 24A). In FIG. 24A, the horizontal axis represents the wavelength of light, and the vertical axis represents the light transmittance of the colored film 702, the colored film 704, the colored film 706, or the colored film 708.

When the transmittance of light having a wavelength of 450 nm is 100%, the transmittance of light having a wavelength of 500 nm is 37.5% for the colored film 702, 21.6% for the colored film 704, and 6.6 for the colored film 706. %, And the colored film 708 was 2.2%.

In any transmission spectrum, the peak of light transmittance in the wavelength range of 380 nm to 780 nm was set to 450 nm.

<Calculation result>
In FIG. 24B, among the light emitted from the display element 602 (i, j) and passing through the colored film CF_1, the chromaticity difference Δu′v ′ of the light emitted in the direction 630 and the direction 632 is obtained. A calculation result is shown (see FIG. 2A). FIG. 24B shows the results obtained when the colored film 702, the colored film 704, the colored film 706, or the colored film 708 is used as the colored film CF_1.

In FIG. 24B, the horizontal axis represents the angle R, and the vertical axis represents the light chromaticity difference Δu′v ′.

The chromaticity of light is represented by CIE 1976 chromaticity coordinates (u′v ′ chromaticity coordinates). The chromaticity difference Δu′v ′ is preferably small.

The chromaticity difference Δu′v ′ changed depending on the transmission spectrum of the colored film CF_1 and the angle R. When the colored film 706 or the colored film 708 was used, the chromaticity difference Δu′v ′ was small even when the angle R was changed.

For example, in order to set the chromaticity difference Δu′v ′ to 0.1 or less when the angle R is in the range of 0 ° to 80 °, the transmittance of light having a wavelength of 500 nm included in the colored film CF_1 is changed to light having a wavelength of 450 nm. The transmittance is preferably 10 times or more.

The structure described in this example can be combined as appropriate with any of the structures described in the other embodiments.

CF colored film CF_1 colored film CF_2 colored film CF_3 colored film d1 distance d2 distance d3 distance FPC flexible printed circuit board L1 light L2 light R angle MD transistor M1 transistor M2 transistor M3 transistor N chromatic dispersion N1 node N2 node N3 node P1 period P2 period P3 Period PR1 Process PR2 Process PR3 Process PR4 Process PR5 Process PR6 Process PR7 Process PR8 Process PR9 Process PR10 Process R0 Light R30 Light R60 Light R80 Light 13 Substrate 15 Light Shielding Film 25 Light Shielding Film 41 Area 42 Area 43 Area 45 Opening 500 Display Panel 500_2 Display panel 500_3 Display panel 500_4 Display panel 500_5 Display panel 502 Pixel 503A Transistor 503B Transistor 504 Substrate 506 Substrate 512 Display region 51 A driver circuit 514B driver circuit 516 terminal 516_1 terminal 516_2 terminal 516_4 terminal 518 terminal 518_1 terminal 518_12 terminal 519 metal oxide film 520 semiconductor film 520_D semiconductor film 521 impurity 522 conductive film 522_A conductive film 522_B conductive film 522_DA conductive film 522_DB conductive film 522_1DB Film 522_1B conductive film 522_2A conductive film 522_2B conductive film 522_3A conductive film 522_3B conductive film 524 conductive film 524A conductive film 524A_1 conductive film 524A_2 conductive film 524A_3 conductive film 524A_D conductive film 524B conductive film 524B_1 conductive film 524B_3 conductive film 524B_3 conductive film 524B3 Insulating film 528 insulating film 528_D insulating film 529 metal oxide film 530 conductive film 530_1 conductive film 530_2 conductive film 530_3 conductive film 530_D conductive film 532 conductive film 532A conductive film 532A_A conductive film 532A_B conductive film 532A_DA conductive film 532A_DB conductive film 532A_F conductive film 532B conductive film 532B_A conductive film 532B_B conductive film 532B_DA conductive film 532B_DB conductive film 532B_DB conductive film 532B_DB Film 536_A opening 536_B opening 538A insulating film 538B insulating film 539 insulating film 542 opening 544 opening 546 conductive film 552 wiring 554 wiring 556 wiring 557 wiring 558 wiring 562 light shielding film 564 bonding layer 566 sealing material 568 conductive material 602 display Element 603 region 604 conductive film 605 conductive film 605_1 conductive film 605_2 conductive film 606 light emitting layer 608 conductive film 609 conductive film 610 insulating film 614 capacitor portion 16 circuit 630 direction 632 direction 702 color film 704 color film 706 color film 708 color film 5200B information processing apparatus 5210 computing device 5220 input-output device 5230 display unit 5240 input unit 5250 detecting unit 5290 communication unit

Claims (6)

A first pixel, a second pixel, a first conductive film, a second conductive film, a light emitting layer, and a first colored film;
In the first pixel and the second pixel, the light emitting layer is formed between the first conductive film and the second conductive film,
In the first pixel, the first conductive film is formed between the first colored film and the second conductive film,
The first pixel has a portion in which a distance between the first conductive film and the second conductive film is a first distance;
The second pixel has a portion in which a distance between the first conductive film and the second conductive film is a second distance;
The first distance is equal to the second distance;
The first conductive film has a semi-light transmission property and a semi-light reflection property,
The second conductive film has light reflectivity,
The first colored film has a transmission spectrum having a first transmittance and a second transmittance;
The first transmittance is a transmittance for light having a wavelength of 500 nm,
The second transmittance is the largest transmittance for light in a wavelength range of 400 nm or more and less than 500 nm,
The display panel, wherein the second transmittance is 10 times or more of the first transmittance. In claim 1,
Having a third pixel;
In the third pixel, the light emitting layer is formed between the first conductive film and the second conductive film,
The third pixel has a portion in which a distance between the first conductive film and the second conductive film is a third distance;
The third distance is a display panel different from the first distance. In claim 2,
A second colored film and a third colored film,
In the second pixel, the first conductive film is formed between the second colored film and the second conductive film,
In the third pixel, the first conductive film is formed between the third colored film and the second conductive film,
The second colored film transmits red light,
The third colored film is a display panel that transmits green light. In any one of Claim 1 thru | or 3,
The second conductive film is a display panel containing silver. In any one of Claims 1 thru | or 4,
A transistor, a monitor wiring, and a monitor circuit;
The transistor has a function of connecting the monitor wiring and the second conductive film,
The monitor wiring is a display panel connected to the monitor circuit. A display panel according to any one of claims 1 to 5;
An information processing apparatus including one or more of a keyboard, hardware buttons, a pointing device, a touch sensor, an illuminance sensor, an imaging device, a voice input device, a line-of-sight input device, and a posture detection device.

Images