JP2018186171A - Method for manufacturing light-emitting diode chip and light-emitting diode chip - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a light-emitting diode chip capable of obtaining sufficient luminance, and the light-emitting diode chip.SOLUTION: A method for manufacturing a light-emitting diode chip comprises: a wafer preparing step of preparing a wafer which includes a laminate layer in which a plurality of semiconductor layers are formed on a transparent substrate for crystal growth and in which an LED circuit is formed on the laminate layer; a wafer rear surface processing step of forming a plurality of recesses or a plurality of grooves corresponding to each LED circuit on a rear surface of the wafer; a transparent substrate processing step of forming a plurality of recesses corresponding to each LED circuit on a surface or a rear surface of at least a first transparent substrate in which a plurality of air bubbles are formed inside or a second transparent substrate in which a plurality of through holes are formed across the whole surface; a transparent substrate sticking step of sticking the first transparent substrate to a rear surface of the wafer and the second transparent substrate to a rear surface of the first transparent substrate after processing the transparent substrates; and a dividing step of dividing the integrated wafer into individual light-emitting diode chips by cutting the wafer together with the first transparent substrate and the second transparent substrate along the division schedule lines after the transparent substrate sticking step.SELECTED DRAWING: Figure 13

Description

  The present invention relates to a light emitting diode chip manufacturing method and a light emitting diode chip.

  A stacked body layer in which a plurality of n-type semiconductor layers, light-emitting layers, and p-type semiconductor layers are stacked is formed on the surface of a crystal growth substrate such as a sapphire substrate, a GaN substrate, or a SiC substrate. A wafer in which a plurality of light emitting devices such as LEDs (Light Emitting Diodes) are formed in a region partitioned by the planned division line is cut along the planned division line and divided into individual light emitting device chips, and the divided light emission Device chips are widely used in various electric devices such as mobile phones, personal computers, and lighting devices.

  Since the light emitted from the light emitting layer of the light emitting device chip is isotropic, the light is emitted also to the inside of the crystal growth substrate, and the light is also emitted from the back and side surfaces of the substrate. However, of the light irradiated to the inside of the substrate, light whose incident angle at the interface with the air layer is greater than the critical angle is totally reflected at the interface and confined inside the substrate, and is not emitted outside from the substrate. Therefore, there is a problem that the luminance of the light emitting device chip is lowered.

  In order to solve this problem, a light emitting diode in which a transparent member is attached to the back surface of the substrate to improve the luminance in order to prevent light emitted from the light emitting layer from being confined inside the substrate. (LED) is described in Japanese Patent Application Laid-Open No. 2014-175354.

JP 2014-175354 A

  However, the light emitting diode disclosed in Patent Document 1 has a problem that sufficient luminance cannot be obtained although the luminance is slightly improved by sticking a transparent member to the back surface of the substrate.

  The present invention has been made in view of these points, and an object of the present invention is to provide a method of manufacturing a light-emitting diode chip and a light-emitting diode chip that can obtain sufficient luminance.

  According to invention of Claim 1, it is a manufacturing method of a light emitting diode chip | tip, Comprising: It has a laminated body layer in which the several semiconductor layer containing a light emitting layer was formed on the transparent substrate for crystal growth, This laminated body layer A wafer preparation step of preparing a wafer in which LED circuits are formed in each region partitioned by a plurality of division lines intersecting each other on the surface of the wafer, and a plurality of recesses or corresponding to each LED circuit on the back surface of the wafer Wafer back surface processing step for forming grooves, and the front or back surface of at least one of a first transparent substrate having a plurality of bubbles formed therein or a second transparent substrate having a plurality of through holes formed over the entire surface A transparent substrate processing step for forming a plurality of depressions corresponding to each LED circuit, and after performing the transparent substrate processing step, the surface of the first transparent substrate is adhered to the back surface of the wafer, and A transparent substrate pasting step of pasting the surface of the second transparent substrate on the back surface of the first transparent substrate to form an integrated wafer; and after performing the transparent substrate pasting step, the wafer is scheduled to be divided And a dividing step of dividing the integrated wafer into individual light emitting diode chips by cutting together with the first and second transparent substrates along a line. Is done.

  Preferably, the cross-sectional shape of the recess formed in the transparent substrate processing step is any one of a triangular shape, a quadrangular shape, and a circular shape. Preferably, the recess formed in the transparent substrate processing step is formed by any one of etching, sandblasting, and laser.

  Preferably, the first and second transparent substrates are formed of any one of transparent ceramics, optical glass, sapphire, and transparent resin, and the first transparent substrate is attached to the wafer with a transparent adhesive in the transparent substrate attaching step. The second transparent substrate is adhered to the first transparent substrate with a transparent adhesive.

  According to the fifth aspect of the present invention, there is a light emitting diode chip, in which an LED circuit is formed on the front surface and a recess or a groove is formed on the back surface, and a plurality of light emitting diodes are attached to the back surface of the light emitting diode. A first transparent member in which bubbles are formed, and a second transparent member in which a plurality of through-holes adhered to the back surface of the first transparent member are formed, the first transparent member or There is provided a light emitting diode chip in which depressions are formed on the front surface or the back surface of at least one of the second transparent members.

  The light emitting diode chip of the present invention has a recess or groove formed on the back surface of the light emitting diode, and at least one of a first transparent member having a plurality of bubbles and a second transparent member having a plurality of through holes. Since the depression is formed on the front surface or the back surface, in addition to increasing the surface area of the first transparent member or the second transparent member, light is refracted in a complicated manner by at least two layers of the transparent member and the depression. The light confined in the first and second transparent members is reduced, the amount of light emitted from the first and second transparent members is increased, and the luminance of the light emitting diode chip is improved.

It is a surface side perspective view of an optical device wafer. FIG. 2A is a perspective view illustrating a wafer back surface processing step using a cutting blade, and FIGS. 2B to 2D are cross-sectional views illustrating the formed groove shape. 3A is a perspective view of the back surface side of the wafer having a plurality of grooves extending in the first direction formed on the back surface of the wafer, and FIG. 3B is a diagram illustrating the first direction formed on the back surface of the wafer and FIG. It is a back surface side perspective view of a wafer in which a plurality of grooves extended in the 2nd direction which intersects perpendicularly with the 1st direction were formed. 4A is a perspective view showing a state where a mask is attached to the back surface of the wafer, FIG. 4B is a perspective view of a state where a mask having a plurality of holes is attached to the back surface of the wafer, FIG. FIGS. 4C to 4E are partial perspective views of the wafer showing the shape of the recesses formed on the back surface of the wafer. 5A is a perspective view showing a state in which a groove is formed on the back surface of the wafer by a laser beam, FIG. 5B is a partial sectional view of the wafer showing the groove shape, and FIG. 5C is a sectional view of the wafer by the laser beam. FIG. 5 (D) is a partial perspective view of the wafer showing the formed circular recess. 6A is a perspective view showing a state in which a mask having a plurality of holes corresponding to each LED circuit of the optical device wafer is attached to the surface of the first transparent substrate, and FIG. 6B is a first transparent substrate. FIG. 6C to FIG. 6E are partial perspective views showing the shape of the recess formed on the surface of the first transparent substrate, with the mask attached to the surface of the substrate. FIG. 7A is a perspective view showing a state in which a plurality of depressions corresponding to each LED circuit of the optical device wafer are formed on the surface of the first transparent substrate by laser beam irradiation, and FIG. FIG. FIG. 8A is a perspective view showing a first integration process in which a first transparent substrate having a plurality of depressions on the surface is attached to the back surface of the wafer and integrated, and FIG. 8B is a first integration. It is a perspective view of a wafer. FIG. 9A is a perspective view showing a second integration step in which the surface of the second transparent substrate is attached to the back surface of the first transparent substrate of the first integrated wafer and integrated, FIG. 9B. FIG. 4 is a perspective view of a second integrated wafer. It is a perspective view which shows the support process which supports a 2nd integrated wafer with an annular frame via a dicing tape. It is a perspective view which shows the division | segmentation process which divides | segments a 2nd integrated wafer into a light emitting diode chip. It is a perspective view of the 2nd integrated wafer after the end of a division process. 1 is a perspective view of a light emitting diode chip according to an embodiment of the present invention.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Referring to FIG. 1, there is shown a front side perspective view of an optical device wafer 11 (hereinafter sometimes simply referred to as a wafer) 11.

  The optical device wafer 11 is configured by laminating an epitaxial layer (laminated body layer) 15 such as gallium nitride (GaN) on a sapphire substrate 13. The optical device wafer 11 has a front surface 11a on which an epitaxial layer 15 is stacked and a back surface 11b on which the sapphire substrate 13 is exposed.

  Here, in the optical device wafer 11 of the present embodiment, the sapphire substrate 13 is employed as the crystal growth substrate. However, a GaN substrate or a SiC substrate may be employed instead of the sapphire substrate 13.

  The stacked body layer (epitaxial layer) 15 includes an n-type semiconductor layer (for example, an n-type GaN layer) in which electrons are majority carriers, a semiconductor layer (for example, an InGaN layer) that is a light emitting layer, and a p in which holes are majority carriers. It is formed by epitaxially growing a type semiconductor layer (for example, a p-type GaN layer) in this order.

  The sapphire substrate 13 has a thickness of 100 μm, for example, and the laminate layer 15 has a thickness of 5 μm, for example. A plurality of LED circuits 19 are defined on the laminate layer 15 by a plurality of division lines 17 formed in a lattice pattern. The wafer 11 has a front surface 11a on which the LED circuit 19 is formed and a back surface 11b on which the sapphire substrate 13 is exposed.

  According to the light emitting diode chip manufacturing method of the embodiment of the present invention, first, a wafer preparation step for preparing an optical device wafer 11 as shown in FIG. 1 is performed. Further, a wafer back surface processing step for forming a plurality of grooves 3 corresponding to the LED circuits 19 on the back surface 11 b of the wafer 11 is performed.

  This wafer back surface processing step is performed using, for example, a well-known cutting device. As shown in FIG. 2A, the cutting unit 10 of the cutting apparatus includes a spindle housing 12, a spindle (not shown) rotatably inserted into the spindle housing 12, and a cutting blade 14 attached to the tip of the spindle. Is included.

  The cutting blade of the cutting blade 14 is formed of, for example, an electroforming grindstone in which diamond abrasive grains are fixed by nickel plating, and the tip shape thereof is triangular, quadrangular, or semicircular.

  The upper half of the cutting blade 14 is covered with a blade cover (wheel cover) 16, and the blade cover 16 is a pair of cooler nozzles (only one is shown) extending horizontally toward the back side and the near side of the cutting blade 14. 18 is arranged.

  In the wafer back surface processing step of forming a plurality of grooves 3 on the back surface 11b of the wafer 11, the surface 11a of the wafer 11 is sucked and held by a chuck table of a cutting device (not shown). Then, the cutting blade 14 is cut at a predetermined depth into the back surface 11b of the wafer 11 while rotating the cutting blade 14 at a high speed in the direction of arrow R, and the wafer 11 held on a chuck table (not shown) is processed and fed in the direction of arrow X1, thereby causing Grooves 3 that are elongated to each other are formed by cutting.

  As shown in FIG. 3 (A), the back surface 11b of the wafer 11 is cut while indexing and feeding the wafer 11 in the direction orthogonal to the arrow X1 direction by the pitch of the division line 17 of the wafer 11. A plurality of grooves 3 extending in succession are formed one after another.

  As shown in FIG. 3 (A), the plurality of grooves 3 formed on the back surface 11b of the wafer 11 may extend only in one direction, or as shown in FIG. A plurality of grooves 3 extending in the first direction and the second direction orthogonal to the first direction may be formed on the back surface 11 b of the wafer 11.

  The groove formed on the back surface 11b of the wafer 11 is a groove 3 having a triangular cross section as shown in FIG. 2 (B), or a groove 3A having a square cross section as shown in FIG. 2 (C), or FIG. 2 (D). Any of the grooves 3B having a semicircular cross section as shown in FIG.

  Instead of the embodiment in which the plurality of grooves 3, 3 </ b> A, 3 </ b> B are formed on the back surface 11 b of the wafer 11 by cutting, a plurality of recesses may be formed on the back surface 11 b of the wafer 11 corresponding to the LED circuit 19. In this embodiment, as shown in FIG. 4A, a mask 2 having a plurality of holes 4 corresponding to the LED circuit 19 of the wafer 11 is used.

  As shown in FIG. 4B, the holes 4 of the mask 2 are attached to the back surface 11 b of the wafer 11 so as to correspond to the LED circuits 19 of the wafer 11. Then, a triangular recess 5 corresponding to the shape of the hole 4 of the mask 2 is formed on the back surface 11b of the wafer 11 by wet etching or plasma etching, as shown in FIG.

  By changing the shape of the hole 4 of the mask 2 to a square shape or a circular shape, a rectangular recess 5A as shown in FIG. 4D is formed on the back surface 11b of the wafer 11, or FIG. A circular recess 5B may be formed on the back surface 11b of the wafer 11 as shown in FIG.

  As a modification of the present embodiment, a triangular recess as shown in FIG. 4C is formed on the back surface 11b of the wafer 11 by pasting the mask 2 on the back surface 11b of the wafer 11 and then performing sandblasting. 5 or a rectangular recess 5A as shown in FIG. 4D, or a circular recess 5B as shown in FIG. 4E.

  In order to form a plurality of grooves or a plurality of recesses corresponding to the LED circuit 19 on the back surface 11 b of the wafer 11, a laser processing apparatus may be used. In the first embodiment by laser processing, as shown in FIG. 5A, a laser beam having a wavelength (for example, 266 nm) having an absorptivity with respect to the wafer 11 is applied from the condenser (laser head) 24 to the wafer 11. A groove table 7 extending in the first direction is formed on the back surface 11b of the wafer 11 by ablation by processing and feeding a chuck table (not shown) holding the wafer 11 in the direction of the arrow X1 while irradiating the back surface 11b.

  A plurality of grooves 7 extending in the first direction are successively formed by ablating the back surface 11b of the wafer 11 while indexing and feeding the wafer 11 in the direction orthogonal to the arrow X1 direction by the pitch of the division lines 17 of the wafer 11. And form. The cross-sectional shape of the groove 7 may be a semicircular shape as shown in FIG. 5B, for example, or may be another shape.

  As an alternative embodiment, as shown in FIG. 5C, a pulse laser beam having a wavelength (for example, 266 nm) having an absorptivity is intermittently irradiated from the condenser 24 to the wafer 11 to You may make it form the some recessed part 9 corresponding to the LED circuit 19 in the back surface 11b. The shape of the recess 9 is usually a circle as shown in FIG. 5D corresponding to the spot shape of the laser beam.

  After or before performing the wafer back surface processing step, the front surface or the back surface of the first transparent substrate 21 in which a plurality of bubbles 29 are formed in the inside to be attached to the back surface 11b of the wafer 11, or the first transparent A transparent substrate processing step is performed in which a plurality of depressions are formed on the front surface or the back surface of the second transparent substrate 21A in which a plurality of through-holes 29A to be bonded to the back surface of the substrate 21 are formed, corresponding to the LED circuits.

  In this transparent substrate processing step, for example, as shown in FIG. 6A, a mask 2 having a plurality of holes 4 corresponding to the LED circuits 19 of the wafer 11 is used. As shown in FIG. 6B, the hole 4 of the mask 2 is made to correspond to each LED circuit 19 of the wafer 11, and the mask is attached to the surface 21a of the first transparent substrate 21 in which a plurality of bubbles 29 are formed. To wear.

  Then, as shown in FIG. 6C, a triangular recess (recess) 35 corresponding to the shape of the hole 4 of the mask 2 is formed on the surface 21a of the first transparent substrate 21 by wet etching or plasma etching. .

  By changing the shape of the hole 4 of the mask 2 to a square shape or a circular shape, a square-shaped depression 35A as shown in FIG. 6D is formed on the surface 21a of the first transparent substrate 21, or FIG. A circular recess 35B may be formed on the surface 21a of the first transparent substrate 21 as shown in FIG. 6 (E).

  The first transparent substrate 21 is formed from any one of transparent resin, optical glass, sapphire, and transparent ceramics. In the present embodiment, the first transparent substrate 21 is formed from a transparent resin such as polycarbonate or acrylic that is more durable than optical glass.

  As a modification of the present embodiment, after the mask 2 is attached to the surface 21a of the first transparent substrate 21, the surface 21a of the first transparent substrate 21 is subjected to sand blasting so that the surface 21a of FIG. Alternatively, a triangular recess 35 as shown in FIG. 6, a square recess 35A as shown in FIG. 6D, or a circular recess 35B as shown in FIG. 6E may be formed.

  A laser processing apparatus may be used to form a plurality of depressions corresponding to the LED circuit 19 on the surface 21 a of the first transparent substrate 21. In the embodiment by laser processing, as shown in FIG. 7A, a laser beam having a wavelength (for example, 266 nm) having an absorptivity with respect to the first transparent substrate 21 is emitted from a condenser (laser head) 24. While intermittently irradiating the surface 21a of one transparent substrate 21, a chuck table (not shown) holding the first transparent substrate 21 is processed and fed in the direction of arrow X1 to the surface 21a of the first transparent substrate 21. A plurality of depressions 39 corresponding to the LED circuit 19 of the wafer 11 are formed by ablation.

  While the first transparent substrate 21 is indexed and fed in the direction perpendicular to the direction of the arrow X1 by the pitch of the division lines 17 of the wafer 11, the surface 21a of the first transparent substrate 21 is ablated to form a plurality of depressions 39. Form one after another. The cross-sectional shape of the recess 39 is usually a circle as shown in FIG. 7B corresponding to the spot shape of the laser beam.

  In the transparent substrate processing step described above, a plurality of depressions 35, 35A, 35B, 39 are formed on the front surface 21a of the first transparent substrate 21, but the back surface of the first transparent substrate 21 is replaced with this embodiment. A plurality of depressions 35, 35A, 35B, 39 may be formed in 21b.

  Alternatively, the front and back surfaces of the first transparent substrate 21 are not processed at all, and each LED circuit of the wafer 11 is formed on the front surface 21a or the back surface 21b of the second transparent substrate 21A in which a plurality of through holes 29A are formed. Correspondingly, a plurality of depressions 35, 35A, 35B, 39 may be formed. Similarly to the first transparent substrate 21, the second transparent substrate 21 </ b> A is formed of any one of transparent resin, optical glass, sapphire, and transparent ceramics.

  After performing the transparent substrate processing step, the front surface 21a of the first transparent substrate 21 is adhered to the rear surface 11b of the wafer 11, and the front surface 21a of the second transparent substrate 21A is adhered to the rear surface 21b of the first transparent substrate 21. The transparent substrate sticking process to wear is implemented.

  In this transparent substrate pasting step, first, as shown in FIG. 8A, the surface 21a of the first transparent substrate 21 in which a plurality of depressions 39 are formed on the surface 21a corresponding to the LED circuits 19 of the wafer 11. Then, the back surface 11b of the wafer 11 is bonded with a transparent adhesive, and the wafer 11 and the first transparent substrate 21 are integrated to form a first integrated wafer 25 as shown in FIG. 8B.

  Next, as shown in FIG. 9 (A), the front surface 21a of the second transparent substrate 21A is adhered to the back surface 21b of the first transparent substrate 21 of the first integrated wafer 25, and FIG. A second integrated wafer 25A as shown is formed.

  This transparent substrate sticking process is not limited to the order mentioned above, but after sticking the surface 21a of the 2nd transparent substrate 21A to the back 21b of the 1st transparent substrate 21, the 1st transparent substrate 21 The front surface 21a may be adhered to the back surface 11b of the wafer 11 to form the second integrated wafer 25A.

  After carrying out the transparent substrate attaching step, as shown in FIG. 10, the second transparent substrate 21A of the second integrated wafer 25A is attached to the dicing tape T whose outer peripheral portion is attached to the annular frame F. A frame unit is formed, and a supporting step of supporting the second integrated wafer 25A with the annular frame F via the dicing tape T is performed.

  After carrying out the supporting step, the frame unit is put into a cutting device, and the dividing step of cutting the second integrated wafer 25 with the cutting device and dividing it into individual light emitting diode chips is carried out. This dividing step will be described with reference to FIG.

  In the dividing step, the second integrated wafer 25A is sucked and held by the chuck table 20 of the cutting device via the dicing tape T of the frame unit, and the annular frame F is clamped and fixed by a clamp (not shown).

  Then, while rotating the cutting blade 14 in the direction of arrow R at high speed, the cutting blade 14 is cut into the division line 17 of the wafer 11 until the tip of the cutting blade 14 reaches the dicing tape T. The second integrated wafer 25A is processed and fed in the direction of the arrow X1 while supplying the cutting fluid toward the wafer 11, and the wafer 11 and the first and second transparent substrates 21 and 21A along the scheduled division line 17 of the wafer 11. A cutting groove 27 for cutting is formed.

  While indexing and feeding the cutting unit 10 in the Y-axis direction, similar cutting grooves 27 are formed one after another along the planned dividing line 17 extending in the first direction. Next, after the chuck table 20 is rotated by 90 °, similar cut grooves 27 are formed along all the planned dividing lines 17 extending in the second direction orthogonal to the first direction, as shown in FIG. By setting the state, the second integrated wafer 25A is divided into light-emitting diode chips 31 as shown in FIG.

  In the embodiment described above, the cutting device is used to divide the second integrated wafer 25A into the individual light emitting diode chips 31, but the wavelength of the wavelength having transparency to the wafer 11 and the transparent substrates 21 and 21A. The wafer 11 is irradiated with a laser beam along the division line 13 to form a plurality of modified layers in the thickness direction inside the wafer 11 and the transparent substrates 21 and 21A, and then the second integrated wafer 25A. An external force may be applied to divide the second integrated wafer 25A into the individual light emitting diode chips 31 using the modified layer as a division starting point.

  The light emitting diode chip 31 shown in FIG. 13 has a first transparent member 21 ′ having a plurality of bubbles 29 inside attached to the back surface of the LED 13 A having the LED circuit 19 on the front surface. In addition, depressions 35, 35A, 35B or depressions 39 are formed on the surface of the first transparent member 21 '. Further, a second transparent member 21A ′ having a plurality of through holes 29A is adhered to the back surface of the first transparent member 21 ′.

  Therefore, in the light emitting diode chip 31 shown in FIG. 13, since the depression is formed on the surface of the first transparent member 21 ′, the surface area of the first transparent member 21 ′ increases. Further, part of the light emitted from the LED circuit 19 of the light emitting diode chip 31 and incident on the first transparent member 21 ′ is refracted in the recessed portion and then enters the first transparent member 21 ′.

  Therefore, when light is refracted to the outside from the first transparent member 21 ′ and the second transparent member 21A ′, the light is emitted at the interface between the first and second transparent members 21 ′ and 21A ′ and the air layer. The proportion of light whose incident angle is greater than or equal to the critical angle is reduced, the amount of light emitted from the first and second transparent members 21 ′ and 21 A ′ is increased, and the luminance of the light emitting diode chip 31 is improved.

2 Mask 3, 3A, 3B Cutting groove 5, 5A, 5B, 9 Recess 10 Cutting unit 11 Optical device wafer (wafer)
13 Sapphire substrate 14 Cutting blade 15 Laminate layer 17 Scheduled division line 19 LED circuit 21 First transparent substrate 21 ′ First transparent member 21A Second transparent substrate 21A ′ Second transparent member 25 First integrated wafer 25A Second integrated wafer 27 Cutting groove 29 Bubble 29A Through hole 31 Light emitting diode chip 35, 35A, 35B, 39

Claims (5)

A method of manufacturing a light emitting diode chip,
Each of the regions has a laminate layer in which a plurality of semiconductor layers including a light emitting layer are formed on a transparent substrate for crystal growth, and is divided into a plurality of division lines intersecting each other on the surface of the laminate layer. A wafer preparation step of preparing a wafer on which an LED circuit is formed;
Wafer back surface processing step for forming a plurality of recesses or grooves corresponding to each LED circuit on the back surface of the wafer;
Corresponding to each LED circuit on at least one surface or back surface of the first transparent substrate having a plurality of bubbles formed therein or the second transparent substrate having a plurality of through holes formed on the entire surface A transparent substrate processing step for forming the depression;
After performing the transparent substrate processing step, the surface of the first transparent substrate is adhered to the back surface of the wafer, and the surface of the second transparent substrate is adhered to the back surface of the first transparent substrate. A transparent substrate pasting process for forming a modified wafer;
A dividing step of dividing the integrated wafer into individual light-emitting diode chips by cutting the wafer together with the first and second transparent substrates along the division line after the transparent substrate attaching step; ,
A method for producing a light-emitting diode chip, comprising:   The method for manufacturing a light-emitting diode chip according to claim 1, wherein the shape of the recess formed in the transparent substrate processing step is any one of a triangular shape, a square shape, and a circular shape. In the wafer back surface processing step, the concave portion or the groove is formed by any one of a cutting blade, etching, sand blast, and laser,
The method for manufacturing a light-emitting diode chip according to claim 1, wherein in the transparent substrate processing step, the recess is formed by any one of etching, sandblasting, and laser.   The first and second transparent substrates are formed of any one of transparent ceramics, optical glass, sapphire, and transparent resin, and in the transparent substrate attaching step, the first transparent substrate is made of a transparent adhesive. The method for producing a light-emitting diode chip according to claim 1, wherein the second transparent substrate is attached to the back surface of the wafer, and the second transparent substrate is attached to the back surface of the first transparent substrate using a transparent adhesive. A light emitting diode chip,
A light emitting diode having an LED circuit formed on the front surface and a recess or groove formed on the back surface;
A first transparent member in which a plurality of bubbles are formed in the inside attached to the back surface of the light emitting diode;
A second transparent member formed with a plurality of through-holes adhered to the back surface of the first transparent member;
With
A light emitting diode chip in which a recess is formed on the front surface or the back surface of at least one of the first transparent member and the second transparent member.