JP2018181870A - Power generation element - Google Patents

Power generation element Download PDF

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JP2018181870A
JP2018181870A JP2017073568A JP2017073568A JP2018181870A JP 2018181870 A JP2018181870 A JP 2018181870A JP 2017073568 A JP2017073568 A JP 2017073568A JP 2017073568 A JP2017073568 A JP 2017073568A JP 2018181870 A JP2018181870 A JP 2018181870A
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power generation
piezoelectric body
generation element
compensation layer
substrate
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JP6858370B2 (en
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亮平 武井
Ryohei Takei
亮平 武井
なつみ 牧本
Natsumi Makimoto
なつみ 牧本
小林　健
Takeshi Kobayashi
健 小林
竜夫 田原
Tatsuo Tawara
竜夫 田原
秋山　守人
Morihito Akiyama
守人 秋山
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National Institute of Advanced Industrial Science and Technology AIST
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Abstract

PROBLEM TO BE SOLVED: To provide a power generation element capable of obtaining a large power generation amount by compensating excessive compressive stress of a piezoelectric body and inducing strain in a piezoelectric body efficiently/effectively against external vibration.SOLUTION: A power generation element according to the present invention has a cantilever structure including a beam portion and a weight portion, and the beam portion includes (a) a piezoelectric body sandwiched between two electrode layers laminated on a substrate, (b) at least one stress compensation layer in contact with at least one of the upper surface of an upper electrode layer and the lower surface of a lower electrode layer, or (c) at least one stress compensation layer in contact with at least one of the lower surface and the upper surface of the piezoelectric body.SELECTED DRAWING: Figure 1

Description

本発明は、発電素子に関し、より具体的には、片持ち梁構造を有する振動発電素子に関する。   The present invention relates to a power generation device, and more particularly to a vibration power generation device having a cantilever structure.

圧電体を備える片持ち梁構造により、振動エネルギーを電力エネルギーに変換する振動発電素子がある。この片持ち梁構造は、錘と梁、及び２つの金属に挟まれた圧電体からなる。この振動発電素子として、半導体のＭＥＭＳ(Micro Electro Mechanical Systems)技術を用いて作製される片持ち梁が広く利用される。さらに、圧電体として高い圧電係数を有するスカンジウム窒化アルミニウム(ＳｃＡｌＮ)を用いることが提案されている(特許文献１)。   There is a vibration power generation element that converts vibration energy into electric power energy by a cantilever structure including a piezoelectric body. This cantilever structure consists of a weight and a beam, and a piezoelectric material sandwiched between two metals. As this vibration power generation element, a cantilever beam manufactured using a semiconductor MEMS (Micro Electro Mechanical Systems) technology is widely used. Furthermore, it has been proposed to use scandium aluminum nitride (ScAlN) having a high piezoelectric coefficient as a piezoelectric body (Patent Document 1).

ＳｃＡｌＮは本質的に極めて大きな圧縮応力を有する材料であり、片持ち梁の梁上にＳｃＡｌＮを配置すると、ＳｃＡｌＮの圧縮応力により片持ち梁が下方向に大きく下方向に垂れ下がってしまう。変形した片持ち梁に対して上下方向に加振された場合に、錘が感じる慣性力は垂れ下がり角度に依存して小さくなり、得られる発電量が小さくなる。加えて、大きな応力は、片持ち梁の製造における歩留まり低下の原因となり、製造コストが上昇するといった課題がある。   ScAlN is essentially a material having a very large compressive stress, and when ScAlN is placed on a cantilever beam, the compressive stress of ScAlN causes the cantilever to sag greatly downward and downward. When the cantilever is vibrated in the vertical direction with respect to the deformed cantilever, the inertial force felt by the weight becomes smaller depending on the drooping angle, and the amount of power generation obtained becomes smaller. In addition, a large stress causes a reduction in yield in the manufacture of a cantilever beam, and there is a problem that the manufacturing cost increases.

特許第５１９０８４１号公報Patent No. 5190841 gazette

本発明は、圧電体が有する過度な圧縮応力を補償し、加振に対して効率的／効果的に圧電体に歪を誘起させることにより大きな発電量を得ることが可能な発電素子を提供することを目的とする。   The present invention provides a power generation element capable of obtaining a large amount of power generation by compensating for excessive compressive stress of a piezoelectric body and efficiently / effectively inducing distortion in a piezoelectric body against vibration. The purpose is

本発明の他の一態様では、梁部と錘部を含む片持ち梁構造を有し、梁部は、基板上に積層された２つの電極層で挟まれた圧電体と、上側の電極層の上面及び下側の電極層の下面の少なくとも一方に接する少なくとも１つの応力補償層とを含む、発電素子を提供する。   Another embodiment of the present invention has a cantilever structure including a beam portion and a weight portion, and the beam portion is formed of a piezoelectric material sandwiched by two electrode layers stacked on a substrate, and an upper electrode layer And a stress compensation layer in contact with at least one of the upper surface and the lower surface of the lower electrode layer.

本発明の一態様では、梁部と錘部を含む片持ち梁構造を有し、梁部は、基板上に積層された２つの電極層で挟まれた圧電体と、圧電体の下面及び上面の少なくとも一方に接する少なくとも１つの応力補償層とを含む、発電素子を提供する。   One aspect of the present invention has a cantilever structure including a beam portion and a weight portion, and the beam portion includes a piezoelectric body sandwiched by two electrode layers stacked on a substrate, and a lower surface and an upper surface of the piezoelectric body And at least one stress compensation layer in contact with at least one of the two.

本発明の一実施形態の発電素子の構成を示す断面図である。It is sectional drawing which shows the structure of the electric power generation element of one Embodiment of this invention. 本発明の一実施形態の発電素子の梁部の層構成を示す断面図である。It is sectional drawing which shows the laminated constitution of the beam part of the electric power generation element of one Embodiment of this invention. 本発明の一実施形態の発電素子の梁部の層構成を示す断面図である。It is sectional drawing which shows the laminated constitution of the beam part of the electric power generation element of one Embodiment of this invention. 本発明の一実施形態の発電素子の梁部の層構成を示す断面図である。It is sectional drawing which shows the laminated constitution of the beam part of the electric power generation element of one Embodiment of this invention. 本発明の一実施形態の発電素子の梁部の層構成を示す断面図である。It is sectional drawing which shows the laminated constitution of the beam part of the electric power generation element of one Embodiment of this invention. 本発明の一実施形態の発電素子の梁部の層構成を示す断面図である。It is sectional drawing which shows the laminated constitution of the beam part of the electric power generation element of one Embodiment of this invention. 従来の発電素子の外観(ａ)と本発明の一実施例の発電素子の外観(ｂ)を示す断面図である。It is sectional drawing which shows the external appearance (a) of the conventional electric power generation element, and the external appearance (b) of the electric power generation element of one Example of this invention. 本発明の一実施例の発電素子の梁部の層構成を示す断面図である。It is sectional drawing which shows the laminated constitution of the beam part of the electric power generation element of one Example of this invention.

図面を参照しながら本発明の実施形態について説明する。図１は、本発明の一実施形態の発電素子１００の構成を示す断面図である。発電素子１００は、基部(支点部)１から延びる片持ち梁(カンチレバー)構造を有する。片持ち梁構造は、梁部２と錘部３を含む。梁部２と錘部３は、例えば１つのＳｉ基板あるいはＳＯＩ基板を用いて作ることができる。その際、梁部２は基板を異方性エッチング等により薄くして利用し、錘部３は基板の厚さをそのまま、あるいは所定の厚さにして利用することができる。いずれも従来からある半導体の加工プロセス(ＭＥＭＳ技術)を用いて製造することができる。   Embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view showing the configuration of a power generation element 100 according to an embodiment of the present invention. The power generation element 100 has a cantilever (cantilever) structure extending from the base (fulcrum portion) 1. The cantilever structure includes a beam 2 and a weight 3. The beam portion 2 and the weight portion 3 can be produced using, for example, one Si substrate or SOI substrate. At that time, the beam portion 2 can be used by thinning the substrate by anisotropic etching or the like, and the weight portion 3 can be used with the thickness of the substrate as it is or with a predetermined thickness. All can be manufactured using a conventional semiconductor processing process (MEMS technology).

図２から図６は、図１の一実施形態の発電素子１００の梁部２のＡ−Ａ断面の多層構成の例を示す図である。図２から図６の多層構成は、梁部２の全体あるいは少なくとも所定の範囲以上に設けることができる。なお、発電量を増やすことを考慮すると、多層構成は梁部２のほぼ全体に設けることが望ましい。   FIGS. 2 to 6 are diagrams showing an example of the multilayer configuration of the cross section A-A of the beam portion 2 of the power generation element 100 according to the embodiment of FIG. 1. The multilayer structure of FIGS. 2 to 6 can be provided over the entire beam portion 2 or at least a predetermined range or more. In addition, in consideration of increasing the amount of power generation, it is desirable to provide the multi-layer structure in almost the entire beam portion 2.

図２から図６では、基板２０としてＳｉ基板、２つの電極層２１、２１として白金(Ｐｔ)、圧電体２３としてスカンジウム窒化アルミニウム(ＳｃＡｌＮ)、応力補償層２４として窒化アルミニウム(ＡｌＮ)、絶縁層２５として酸化シリコン(ＳｉＯ2)をそれぞれ用いた場合の例を示している。基板２０としてはＳｉ単結晶基板、多結晶Ｓｉ基板、あるいは上述したＳＯＩ基板を用いることができる。 2 to 6, the substrate 20 is a Si substrate, the two electrode layers 21 and 21 are platinum (Pt), the piezoelectric body 23 is scandium aluminum nitride (ScAlN), the stress compensation layer 24 is aluminum nitride (AlN), and the insulating layer is An example in the case of using silicon oxide (SiO 2 ) as 25 is shown. As the substrate 20, a Si single crystal substrate, a polycrystalline Si substrate, or the above-described SOI substrate can be used.

２つの電極層２１、２１としては、Ｐｔ以外に例えばモリブデン(Ｍｏ)、タングステン(Ｗ)、アルミニウム(Ａｌ)、白金とチタンとの積層膜(Ｐｔ／Ｔｉ)、ルテニウム(Ｒｕ)、Ｒｕとタンタル(Ｔａ)の積層膜(Ｒｕ／Ｔａ)、ＲｕとＷの積層膜(Ｒｕ／Ｗ)、および金とクロムの積層膜(Ａｕ／Ｃｒ)などを用いることができる。圧電体２３のＳｃＡｌＮにおけるＳｃの含有率は、０.５〜５０原子％の範囲、より具体的には例えば０.５〜３５原子％、１０〜３５原子％、あるいは４０〜５０原子％の範囲とすることができる。絶縁層２５としてＳｉＯ2以外に例えば窒化シリコン(ＳｉＮ)、あるいはＳｉＯ2とＳｉＮの積層膜などを用いることができる。 As the two electrode layers 21 and 21, for example, molybdenum (Mo), tungsten (W), aluminum (Al), a laminated film of platinum and titanium (Pt / Ti), ruthenium (Ru), Ru and tantalum other than Pt A laminated film (Ru / Ta) of (Ta), a laminated film (Ru / W) of Ru and W, a laminated film of gold and chromium (Au / Cr), or the like can be used. The content of Sc in ScAlN of the piezoelectric body 23 is in the range of 0.5 to 50 atomic percent, more specifically, for example, in the range of 0.5 to 35 atomic percent, 10 to 35 atomic percent, or 40 to 50 atomic percent. It can be done. For example, silicon nitride (SiN) or a laminated film of SiO 2 and SiN can be used as the insulating layer 25 other than SiO 2 .

既に上述したように、圧電体２３のＳｃＡｌＮは本質的に極めて大きな圧縮応力を有する材料であることから、本発明の一実施形態では、ＳｃＡｌＮの持つ大きな圧縮応力を補償し、片持ち梁の変形を防ぐ方法として、ＳｃＡｌＮとともに応力補償層２４としてＡｌＮを利用する。ＡｌＮはＳｃＡｌＮとは反対の引張応力を有する絶縁体であり、２つの電極層２１、２１に挟まれたＳｃＡｌＮの外側にＡｌＮを配置することで、全体の応力を緩和することができる。   As already mentioned above, since ScAlN of the piezoelectric body 23 is essentially a material having a very large compressive stress, in one embodiment of the present invention, the large compressive stress of ScAlN is compensated to deform the cantilever. As a method of preventing stress, AlN is used as the stress compensation layer 24 together with ScAlN. AlN is an insulator having a tensile stress opposite to that of ScAlN, and by disposing the AlN on the outside of ScAlN sandwiched between two electrode layers 21, the overall stress can be relaxed.

本発明の一実施形態の発電素子１００の発電動作は、従来からの発電動作と同様に、発電素子１００が加振されると錘部３が上下方向に変位し、梁部２上に配置された圧電体２３に歪が誘起される。その歪によって圧電体２３内に上下方向の分極が生じ、２つの電極層２１、２２間に起電力が発生する。   In the power generation operation of the power generation element 100 according to the embodiment of the present invention, when the power generation element 100 is vibrated, the weight portion 3 is vertically displaced and disposed on the beam portion 2 as in the conventional power generation operation. Strain is induced in the piezoelectric body 23. The distortion causes vertical polarization in the piezoelectric body 23 and an electromotive force is generated between the two electrode layers 21 and 22.

図２と図３は、いずれもＡｌＮの応力補償層２４を２つのＰｔ電極２１、２２の外側に配置した例を示す。図２は、Ｓｉ基板２０上にＡｌＮの応力補償層２４を設け、その上に２つのＰｔ電極２１、２２に挟まれたＳｃＡｌＮの圧電体２３を設けた積層構成を示す。ＡｌＮの応力補償層２４は下側のＰｔ電極２１の下面に接している。図２の構成では、ＡｌＮが絶縁性を有するので、Ｓｉ基板２０上に別途熱酸化膜(ＳｉＯ2)のような絶縁層を設ける必要がない。 2 and 3 each show an example in which the stress compensation layer 24 of AlN is disposed outside the two Pt electrodes 21 and 22. FIG. 2 shows a laminated structure in which a stress compensation layer 24 of AlN is provided on a Si substrate 20, and a ScAlN piezoelectric body 23 sandwiched between two Pt electrodes 21 and 22 is provided thereon. The stress compensation layer 24 of AlN is in contact with the lower surface of the lower Pt electrode 21. In the configuration of FIG. 2, since AlN has an insulating property, it is not necessary to separately provide an insulating layer such as a thermal oxide film (SiO 2 ) on the Si substrate 20.

熱酸化膜(ＳｉＯ2)は圧縮応力を有しており、ＳｃＡｌＮの大きな圧縮応力と合わせて、極めて大きな圧縮応力がＳｉ基板２０に加わることになる。Ｓｉ基板上に結晶性良く成膜可能であり、かつ良好な絶縁性を有しながら、引張応力を有するＡｌＮを絶縁体として、この場合は熱酸化膜(ＳｉＯ2)の替わりに用いることで全応力を大きく低減させることができる。 The thermal oxide film (SiO 2 ) has a compressive stress, and together with the large compressive stress of ScAlN, a very large compressive stress is applied to the Si substrate 20. While being able to form a film with good crystallinity on a Si substrate and having good insulation properties, using AlN having tensile stress as an insulator, in this case, instead of a thermal oxide film (SiO 2 ) Stress can be greatly reduced.

図３は、Ｓｉ基板２０上に絶縁層２５としてＳｉＯ2を設け、その上に２つのＰｔ電極２１、２２に挟まれたＳｃＡｌＮの圧電体２３を設け、さらに、上側のＰｔ電極２２上にＡｌＮの応力補償層２４を設けた積層構成を示す。ＡｌＮの応力補償層２４は上側のＰｔ電極２２の上面に接している。図３の構成では、Ｓｉ基板２０上にＳｉＯ2層２５を有するので、その分圧縮応力が大きくなるが、Ｐｔ電極２２上のＡｌＮの応力補償層２４によって全体の圧縮応力を補償／低減させることができる。 In FIG. 3, SiO 2 is provided as the insulating layer 25 on the Si substrate 20, the ScAlN piezoelectric body 23 sandwiched between the two Pt electrodes 21 and 22 is provided thereon, and AlN on the upper Pt electrode 22 is further provided. The laminated structure which provided the stress compensation layer 24 of this is shown. The stress compensation layer 24 of AlN is in contact with the upper surface of the upper Pt electrode 22. In the configuration of FIG. 3, since the SiO 2 layer 25 is provided on the Si substrate 20, the compressive stress is increased accordingly, but the overall compressive stress is compensated / reduced by the stress compensation layer 24 of AlN on the Pt electrode 22. Can.

図４〜図６は、いずれもＡｌＮの応力補償層２４を２つのＰｔ電極２１、２２の間(内側)に配置した例を示す。ＡｌＮの応力補償層２４が、２つのＰｔ電極２１、２２の間にあることから、図２と図３の２つのＰｔ電極２１、２２の外側にある場合に比べて、発電性能が低下する。しかし、ＡｌＮが圧電材料であるため、その他の材料を用いた場合に比べてその発電性能の低下を小さく抑制することができる。   4 to 6 each show an example in which the stress compensation layer 24 of AlN is disposed between (inside) the two Pt electrodes 21 and 22. Since the stress compensation layer 24 of AlN is located between the two Pt electrodes 21 and 22, the power generation performance is reduced as compared with the case where it is located outside the two Pt electrodes 21 and 22 in FIGS. 2 and 3. However, since AlN is a piezoelectric material, the decrease in the power generation performance can be suppressed to a small level as compared with the case where other materials are used.

図４は、Ｓｉ基板２０上に絶縁層２５としてＳｉＯ2を設け、その上に２つのＰｔ電極２１、２２に挟まれたＳｃＡｌＮの圧電体２３を設け、さらに、下側のＰｔ電極２１とＳｃＡｌＮの圧電体２３の間にＡｌＮの応力補償層２４を設けた積層構成を示す。ＡｌＮの応力補償層２４はＳｃＡｌＮの圧電体２３の下面に接している。 In FIG. 4, SiO 2 is provided as the insulating layer 25 on the Si substrate 20, and the ScAlN piezoelectric body 23 sandwiched between the two Pt electrodes 21 and 22 is provided, and the lower Pt electrode 21 and ScAlN are further provided. The laminated structure in which the stress compensation layer 24 of AlN is provided between the piezoelectric bodies 23 of FIG. The stress compensation layer 24 of AlN is in contact with the lower surface of the piezoelectric body 23 of ScAlN.

図５は、Ｓｉ基板２０上に絶縁層２５としてＳｉＯ2を設け、その上に２つのＰｔ電極２１、２２に挟まれたＳｃＡｌＮの圧電体２３を設け、さらに、上側のＰｔ電極２２とＳｃＡｌＮの圧電体２３の間にＡｌＮの応力補償層２４を設けた積層構成を示す。ＡｌＮの応力補償層２４はＳｃＡｌＮの圧電体２３の上面に接している。 In FIG. 5, SiO 2 is provided as the insulating layer 25 on the Si substrate 20, and the ScAlN piezoelectric body 23 sandwiched between the two Pt electrodes 21 and 22 is provided, and further, the Pt electrode 22 and ScAlN on the upper side are provided. The laminated structure which provided the stress compensation layer 24 of AlN between the piezoelectric bodies 23 is shown. The stress compensation layer 24 of AlN is in contact with the top surface of the piezoelectric body 23 of ScAlN.

図６は、Ｓｉ基板２０上に絶縁層２５としてＳｉＯ2を設け、その上に２つのＰｔ電極２１、２２に挟まれた２つのＳｃＡｌＮの圧電体２３、２６を設け、さらに、２つのＳｃＡｌＮの圧電体２３、２６の間にＡｌＮの応力補償層２４を設けた積層構成を示す。ＡｌＮの応力補償層２４は、下側のＳｃＡｌＮの圧電体２３の上面及び上側のＳｃＡｌＮの圧電体２６の下面に接している。 In FIG. 6, SiO 2 is provided as the insulating layer 25 on the Si substrate 20, and two ScAlN piezoelectrics 23 and 26 sandwiched between the two Pt electrodes 21 and 22 are provided, and further, two ScAlN The laminated structure which provided the stress compensation layer 24 of AlN between the piezoelectric bodies 23 and 26 is shown. The stress compensation layer 24 of AlN is in contact with the upper surface of the lower ScAlN piezoelectric body 23 and the lower surface of the upper ScAlN piezoelectric body 26.

図２から図６の実施形態では、ＡｌＮの応力補償層２４はいずれも１層のみ設けられているが、本発明の実施形態はその１層のみに限定されず、配置を変えた２層以上のＡｌＮの応力補償層２４を設けてもよい。例えば、図２の構成例では、さらに上側のＰｔ電極２２の上にもう一つのＡｌＮの応力補償層を追加し、全体で２つのＡｌＮの応力補償層を有する構成とすることができる。同様に、図４の構成例では、さらに上側のＰｔ電極２２の上に追加のＡｌＮの応力補償層を追加することができる。あるいは、図５の構成例において、下側のＰｔ電極２１とＳｃＡｌＮの圧電体２３の間に追加のＡｌＮの応力補償層を設けることもできる。   In the embodiments of FIGS. 2 to 6, only one stress compensation layer 24 of AlN is provided, but the embodiment of the present invention is not limited to only one layer, and two or more layers whose arrangement is changed The stress compensation layer 24 of AlN may be provided. For example, in the configuration example of FIG. 2, another stress compensation layer of AlN can be added on the upper Pt electrode 22 so that a total of two stress compensation layers of AlN can be provided. Similarly, in the configuration example of FIG. 4, an additional stress compensation layer of AlN can be added on the upper Pt electrode 22. Alternatively, in the configuration example of FIG. 5, an additional stress compensation layer of AlN can be provided between the lower Pt electrode 21 and the piezoelectric body 23 of ScAlN.

本発明の図２から図６の実施形態によると、その製造プロセス途中に応力補償層２４を形成することによって、常に基板の全応力を低い水準に保ったまま、製造プロセスを進めることができる。その結果、従来の製造プロセス途中で基板の大きな全応力が膜剥がれを引き起こし、製造歩留まりの低下を誘発してしまうことを改善することができる。   According to the embodiment of FIGS. 2 to 6 of the present invention, by forming the stress compensation layer 24 in the middle of the manufacturing process, the manufacturing process can be advanced while keeping the total stress of the substrate at a low level all the time. As a result, it is possible to improve that the large total stress of the substrate causes film peeling in the middle of the conventional manufacturing process and causes a decrease in manufacturing yield.

図７と図８を参照しながら本発明の一実施例の発電素子について説明する。図７は、実際に作製した、従来技術による発電素子(ａ)と、本発明の一実施例の発電素子(ｂ)の外観を示す図(写真)である。本発明の一実施例の発電素子(ｂ)は、ＳＯＩ基板(４インチウエハ)を用いて作製した。両図において、Ｂｅａｍが梁部を示し、Ｍａｓｓが錘部を示している。図７(ｂ)の幅Ｗは約４ｍｍであり、梁部(Ｂｅａｍ)の長さＬ１は約３.２ｍｍであり、錘部(Ｍａｓｓ)の長さＬ２は約３.６ｍｍである。また、錘部(Ｍａｓｓ)の厚さは約４００μｍである。   The power generation element according to the embodiment of the present invention will be described with reference to FIGS. 7 and 8. FIG. 7 is a diagram (photograph) showing the appearance of the power generation element (a) according to the prior art and the power generation element (b) of one embodiment of the present invention which were actually produced. The power generation element (b) of one example of the present invention was manufactured using an SOI substrate (4-inch wafer). In both figures, Beam indicates a beam portion, and Mass indicates a weight portion. The width W in FIG. 7B is about 4 mm, the length L1 of the beam (Beam) is about 3.2 mm, and the length L2 of the mass (Mass) is about 3.6 mm. Also, the thickness of the weight (Mass) is about 400 μm.

図８は、図７(ｂ)の本発明の一実施例の発電素子の梁部の多層構造の構成を示す図である。図８の積層構成は、上述した図４の構成、すなわち下側のＰｔ電極２１とＳｃＡｌＮの圧電体２３の間にＡｌＮの応力補償層２４を設けた構成に相当する。各層の厚さは図８に示した通りである。図８のＳｃＡｌＮ層２３のＳｃの含有率は約３９原子％である。   FIG. 8 is a view showing the structure of a multilayer structure of a beam portion of the power generation element of the embodiment of the present invention shown in FIG. 7 (b). The laminated structure of FIG. 8 corresponds to the structure of FIG. 4 described above, that is, a structure in which a stress compensation layer 24 of AlN is provided between the lower Pt electrode 21 and the piezoelectric body 23 of ScAlN. The thickness of each layer is as shown in FIG. The Sc content of the ScAlN layer 23 in FIG. 8 is about 39 at%.

図７の外観から明らかなように、(ａ)の従来の発電素子では、ＡｌＮの応力補償層を用いていないので、錘部(Ｍａｓｓ)が大きく垂れ下がってしまっており、多層膜成膜後の４インチウエハにおける反り量は最大で約１７４μｍであった。一方、(ｂ)の本発明の一実施例の発電素子では、ＡｌＮの応力補償層を用いているので、多層膜成膜後の４インチウエハにおける反り量は約３μｍと大きく改善されることがわかった。   As apparent from the appearance of FIG. 7, in the conventional power generation element of (a), since the stress compensation layer of AlN is not used, the mass portion (Mass) has fallen significantly, and the multilayer film has been formed. The amount of warpage on a 4-inch wafer was about 174 μm at maximum. On the other hand, in the power generation element according to the embodiment of the present invention of (b), since the stress compensation layer of AlN is used, the amount of warpage in the 4-inch wafer after multilayer film formation is largely improved to about 3 μm. all right.

また、実際に発電素子を０.５ｍ／ｓ２の一定の大きさで加振しながら直流発電量(μＷ)を測定した。その結果、応力補償層の無い従来の発電素子(ａ)は、最大で１.６Ｖで０.１３μＷの発電量であったのに対して、本発明の応力補償層を設けた一実施例の発電素子(ｂ)は、最大で２.１Ｖで０.２１μＷの発電量を得ることができ、従来の発電素子(ａ)に比べて約６６％発電量が増加することが確認できた。 In addition, while the power generation element was actually vibrated at a constant magnitude of 0.5 m / s 2 , the DC power generation amount (μW) was measured. As a result, while the conventional power generation element (a) having no stress compensation layer has a power generation amount of 0.13 μW at maximum of 1.6 V, the stress compensation layer of the present invention is provided in one embodiment. The power generation element (b) can obtain a power generation amount of 0.21 μW at a maximum of 2.1 V, and it has been confirmed that the power generation amount is increased by about 66% as compared with the conventional power generation element (a).

本発明の実施形態について、図を参照しながら説明をした。しかし、本発明はこれらの実施形態に限られるものではない。さらに、本発明はその趣旨を逸脱しない範囲で当業者の知識に基づき種々なる改良、修正、変形を加えた態様で実施できるものである。   Embodiments of the present invention have been described with reference to the drawings. However, the present invention is not limited to these embodiments. Furthermore, the present invention can be implemented in variously modified, modified, or modified forms based on the knowledge of those skilled in the art without departing from the scope of the present invention.

本発明の発電素子は、既存の半導体ＭＥＭＳプロセスを利用して製作可能であり、小型で軽量な発電素子として産業上の幅広い利用が可能である。   The power generation element of the present invention can be manufactured using the existing semiconductor MEMS process, and can be widely used in industry as a small and lightweight power generation element.

１ 基部(支点部)
２ 梁部
３ 錘部
２０ 基板
２１、２２ 電極層
２３、２６ 圧電体
２４ 応力補償層
２５ 絶縁層
１００ 発電素子 1 base (fulcrum part)
DESCRIPTION OF SYMBOLS 2 beam part 3 weight part 20 board | substrate 21, 22 electrode layer 23, 26 piezoelectric material 24 stress compensation layer 25 insulation layer 100 electric power generation element

Claims (6)

梁部と錘部を含む片持ち梁構造を有する発電素子であって、
梁部は、基板上に積層された２つの電極層で挟まれた圧電体と、上側の電極層の上面及び下側の電極層の下面の少なくとも一方に接する少なくとも１つの応力補償層とを含む、発電素子。 A power generation element having a cantilever structure including a beam portion and a weight portion,
The beam portion includes a piezoelectric body sandwiched between two electrode layers stacked on a substrate, and at least one stress compensation layer in contact with at least one of the upper surface of the upper electrode layer and the lower surface of the lower electrode layer. , Power generation element. 梁部と錘部を含む片持ち梁構造を有する発電素子であって、
梁部は、基板上に積層された２つの電極層で挟まれた圧電体と、圧電体の下面及び上面の少なくとも一方に接する少なくとも１つの応力補償層とを含む、発電素子。 A power generation element having a cantilever structure including a beam portion and a weight portion,
A beam generating element comprising: a piezoelectric body sandwiched between two electrode layers stacked on a substrate; and at least one stress compensation layer in contact with at least one of the lower surface and the upper surface of the piezoelectric body. 前記圧電体は積層された２つの圧電体を含み、前記応力補償層は２つの圧電体の間に在る、請求項２の発電素子。   The power generation device according to claim 2, wherein the piezoelectric body includes two stacked piezoelectric bodies, and the stress compensation layer is between the two piezoelectric bodies. 前記圧電体はＳｃＡｌＮを含み、前記応力補償層はＡｌＮを含む、請求項１〜３のいずれかに記載の発電素子。   The power generation device according to any one of claims 1 to 3, wherein the piezoelectric body includes ScAlN, and the stress compensation layer includes AlN. 前記２つの電極層は、白金(Ｐｔ)、モリブデン(Ｍｏ)、タングステン(Ｗ)、アルミニウム(Ａｌ)、白金とチタンとの積層膜(Ｐｔ／Ｔｉ)、ルテニウム(Ｒｕ)、Ｒｕとタンタル(Ｔａ)の積層膜(Ｒｕ／Ｔａ)、ＲｕとＷの積層膜(Ｒｕ／Ｗ)、および金とクロムの積層膜(Ａｕ／Ｃｒ)の中から選択された少なくとも１つを含む、請求項４に記載の発電素子。   The two electrode layers are platinum (Pt), molybdenum (Mo), tungsten (W), aluminum (Al), a laminated film of platinum and titanium (Pt / Ti), ruthenium (Ru), Ru and tantalum (Ta And at least one selected from a laminated film of Ru and Ta (Ru / Ta), a laminated film of Ru and W (Ru / W), and a laminated film of gold and chromium (Au / Cr). Power generation element as described. 前記基板は前記錘部の先端まで延びるＳｉ基板またはＳＯＩ基板を含む、請求項５に記載の発電素子。   The power generation device according to claim 5, wherein the substrate includes a Si substrate or an SOI substrate extending to a tip of the weight portion.
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