JP2018174346A - Substrate cleaning system, substrate cleaning method, and recording medium - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a high removing performance of particles.SOLUTION: A substrate cleaning system comprises a holding unit and a removing solution supply unit. The holding unit holds a substrate that has a treatment film formed thereon, the treatment film containing an organic solvent and a polymer that includes a fluorine atom and is soluble in the organic solvent. The removing solution supply unit supplies, to the treatment film formed on the substrate, a removing solution capable of removing the treatment film. The polymer has a partial structure represented by the following formula (1), and the removing solution supply unit comprises a stripping treatment solution supply unit, and a dissolving treatment solution supply unit. The stripping treatment solution supply unit is configured to supply, to the treatment film, a stripping treatment solution capable of stripping the treatment film from the substrate. The dissolving treatment solution supply unit is configured to supply, to the treatment film, a dissolving treatment solution capable of dissolving the treatment film. (In the formula (1), R1 and R2 each independently represent a hydrogen atom, a fluorine atom, an alkyl group having 1 to 8 carbon atoms, or a fluorinated alkyl group having 1 to 8 carbon atoms, provided that at least one of R1 and R2 is a fluorine atom or a fluorinated alkyl group having 1 to 8 carbon atoms, and the symbol * shows a bonding site with another atom constituting the polymer.)SELECTED DRAWING: None

Description

  The disclosed embodiments relate to a substrate cleaning system.

  Conventionally, there has been known a substrate cleaning apparatus that removes particles adhering to a substrate such as a silicon wafer or a compound semiconductor wafer. For example, Patent Document 1 discloses a substrate cleaning method in which a treatment film is formed on the surface of a substrate using a topcoat liquid, and the treatment film is removed to remove particles on the substrate together with the treatment film. .

JP 2014-123704 A

  However, in the method described in Patent Document 1, for example, when a substrate having a base film is processed, the processing film may not be sufficiently removed depending on the substrate to be processed, and high particle removal performance may not be obtained. there were.

  An object of one embodiment is to provide a substrate cleaning system capable of obtaining high particle removal performance.

（式（１）中、Ｒ^１、Ｒ^２はそれぞれ独立して水素原子、フッ素原子、炭素数１〜８のアルキル基又はフッ素化アルキル基を表す。ただし、Ｒ^１又はＲ^２の少なくともいずれか１つはフッ素原子または炭素数１〜８のフッ素化アルキル基である。＊は重合体を構成する他原子との結合部位を表す。） The substrate cleaning system according to one aspect of the embodiment includes a holding unit and a removal liquid supply unit. The holding unit holds a substrate on which a treatment film containing an organic solvent and a polymer containing a fluorine atom and soluble in the organic solvent is formed. The removal liquid supply unit supplies a removal liquid for removing the treatment film to the treatment film on the substrate. Moreover, a polymer has a partial structure represented by following formula (1), and a removal liquid supply part is provided with a peeling process liquid supply part and a melt | dissolution process liquid supply part. The peeling treatment liquid supply unit supplies a peeling treatment liquid for peeling the treatment film from the substrate to the treatment film. The dissolution treatment liquid supply unit supplies a dissolution treatment liquid that dissolves the treatment film with respect to the treatment film.

(In Formula (1), R ¹ and R ² each independently represent a hydrogen atom, a fluorine atom, an alkyl group having 1 to 8 carbon atoms, or a fluorinated alkyl group, provided that at least one of R ^{1 and} R ² One is a fluorine atom or a fluorinated alkyl group having 1 to 8 carbon atoms. * Represents a bonding site with another atom constituting the polymer.)

  According to one aspect of the embodiment, high particle removal performance can be obtained.

FIG. 1A is an explanatory diagram of a substrate cleaning method according to this embodiment. FIG. 1B is an explanatory diagram of the substrate cleaning method according to the present embodiment. FIG. 1C is an explanatory diagram of the substrate cleaning method according to the present embodiment. FIG. 1D is an explanatory diagram of the substrate cleaning method according to the present embodiment. FIG. 1E is an explanatory diagram of the substrate cleaning method according to the present embodiment. FIG. 2 is a diagram showing the evaluation results regarding the removability of the conventional top coat liquid and the film forming treatment liquid according to the present embodiment from the substrate. FIG. 3 is a schematic diagram showing the configuration of the substrate cleaning system according to the present embodiment. FIG. 4 is a schematic diagram showing the configuration of the substrate cleaning apparatus according to the present embodiment. FIG. 5 is a flowchart showing a processing procedure of the substrate cleaning processing executed by the substrate cleaning system according to the present embodiment. FIG. 6 is a flowchart showing the processing procedure of the removal process in the case of using an alkali-soluble film forming solution. FIG. 7 is a flowchart showing the processing procedure of the removal process in the case of using a film-forming process liquid that is hardly soluble in alkali. FIG. 8 is a flowchart showing a modification (No. 1) of the removal process in the case of using a film-forming process liquid that is hardly soluble in alkali. FIG. 9 is a flowchart showing a modification (No. 2) of the removal process in the case of using a film-forming solution that is hardly soluble in alkali. FIG. 10 is a flowchart illustrating a modification of the removal process. FIG. 11 is a flowchart showing a modification of the removal process in the case where a diluted organic solvent is used as the peeling process liquid. FIG. 12A is an explanatory diagram (part 1) of a diluted organic solvent supply process. FIG. 12B is an explanatory diagram (part 2) of the diluted organic solvent supply process. FIG. 12C is an explanatory diagram (part 3) of the diluted organic solvent supply process. FIG. 13 is a flowchart showing a processing procedure of substrate cleaning processing executed by the substrate cleaning system according to another embodiment. FIG. 14A is an explanatory diagram of the first film formation promoting process. FIG. 14B is a schematic diagram illustrating a configuration of the substrate cleaning system when the first film formation promoting process is executed. FIG. 15A is an explanatory diagram (part 1) of the second film formation promoting process. FIG. 15B is an explanatory diagram (part 2) of the second film formation promoting process. FIG. 15C is an explanatory diagram (part 3) of the second film formation promoting process. FIG. 15D is a schematic diagram (part 1) illustrating the configuration of the substrate cleaning system when the second film formation promoting process is performed. FIG. 15E is a schematic diagram (part 2) illustrating the configuration of the substrate cleaning system when the second film formation promoting process is executed. FIG. 15F is a schematic diagram (part 3) illustrating the configuration of the substrate cleaning system when the second film formation promoting process is executed. FIG. 16A is an explanatory diagram of a third film formation promoting process. FIG. 16B is a schematic diagram illustrating a configuration of the substrate cleaning system when the third film formation promoting process is executed.

  Hereinafter, embodiments of a substrate cleaning system disclosed in the present application will be described in detail with reference to the accompanying drawings. In addition, this invention is not limited by embodiment shown below.

<Contents of substrate cleaning method>
First, the contents of the substrate cleaning method according to the present embodiment will be described with reference to FIGS. 1A to 1E. 1A to 1E are explanatory views of a substrate cleaning method according to the present embodiment.

  As shown in FIG. 1A, in the substrate cleaning method according to this embodiment, “film formation” is performed on the pattern formation surface of a substrate such as a silicon wafer or a compound semiconductor wafer (hereinafter also referred to as “wafer W”). Supply “treatment liquid”.

  The “film forming solution” according to the present embodiment is a substrate cleaning composition containing a solvent and a polymer having a partial structure represented by the formula (1) described later. By using such a film-forming treatment liquid, high particle removal performance can be obtained regardless of the type of the underlying film. In addition, the polymer is not limited to the case where it has a partial structure represented by the formula (1) to be described later, and if it contains a fluorine atom, the same effect as described above can be obtained.

  The film forming treatment liquid supplied to the pattern forming surface of the wafer W is solidified or cured to become a treated film. As a result, the pattern formed on the wafer W and the particles P adhering to the pattern are covered with the processing film (see FIG. 1B). Here, “solidification” means solidification, and “curing” means that molecules are connected to each other to be polymerized (for example, crosslinking or polymerization).

  Subsequently, as shown in FIG. 1B, the peeling treatment liquid is supplied to the treatment film on the wafer W. The peeling treatment liquid is a treatment liquid for peeling the above-described treatment film from the wafer W.

  After the peeling treatment liquid is supplied onto the treatment film, it penetrates into the treatment film and reaches the interface between the treatment film and the wafer W. In this way, when the peeling treatment liquid enters the interface between the treatment film and the wafer W, the treatment film is peeled off from the wafer W in a “film” state, and accordingly, the particles P attached to the pattern forming surface are treated. The film is peeled off from the wafer W together with the film (see FIG. 1C).

  Here, for example, in Japanese Patent Application Laid-Open No. 2014-123704 (Patent Document 1), a treatment film is formed on the surface of a substrate using a topcoat liquid, and the treatment film is removed to remove the treatment film on the substrate. A substrate cleaning method for removing particles is disclosed. The top coat liquid is a protective film applied to the surface of the resist film in order to prevent the immersion liquid from entering the resist film.

  In the substrate cleaning method according to the present embodiment, it has been described that the treatment film on the substrate is first peeled off in the state of the film as the removal flow of the treatment film. However, when the topcoat solution is used, for example, SiN (nitridation) Depending on the substrate having a base film such as a (silicon) film or a TiN (titanium nitride) film, the treatment film may be insufficiently peeled, so that the removability of the treatment film from the substrate may not be high. That is, depending on the substrate to be processed, the processing film may not be sufficiently removed, and the particle removal performance may not be sufficiently exhibited.

  Therefore, in the substrate cleaning method according to the present embodiment, the above-described substrate cleaning composition is used as the film forming treatment liquid. Such film-forming treatment liquid has higher removability from the substrate of the treatment film than the conventional topcoat film, and is also high in the case where a substrate having a base film such as a SiN film or a TiN film is to be treated. Removal performance can be obtained.

  Here, the evaluation result regarding the removability from the substrate of the conventional top coat liquid and the film forming treatment liquid according to the present embodiment will be described with reference to FIG. FIG. 2 is a diagram showing the evaluation results regarding the removability of the conventional top coat liquid and the film forming treatment liquid according to the present embodiment from the substrate.

  In FIG. 2, after forming a topcoat solution and a film treatment solution on a bare silicon wafer and a SiN wafer (substrate having a SiN film), room temperature (about 23 to 25 degrees) is used as a peeling treatment solution. The evaluation results of the removability of each treatment film from the substrate when DIW which is pure water is supplied are shown. In the table of FIG. 2, “◯” represents that the removal rate of the treatment film from the substrate is 90% or more, and “X” represents that the removal rate is 10% or less.

  As shown in FIG. 2, the conventional topcoat solution treatment film peels well from the substrate when a bare silicon wafer is to be treated, but from the substrate when a SiN wafer is to be treated. It can be seen that the peeling is not sufficient and the removability is lowered.

  On the other hand, the treatment film of the film-forming treatment liquid according to the present embodiment peels well from the substrate and has high removability both when the bare silicon wafer is a treatment target and when the SiN wafer is a treatment target. I understand that.

  As described above, in the substrate cleaning method according to the present embodiment, by using the film forming treatment liquid, it is possible to improve the removability with respect to the substrate having the base film such as the SiN film as compared with the conventional top coat liquid. it can. Therefore, according to the substrate cleaning method according to the present embodiment, it is possible to obtain a high particle removal performance for many substrates as compared with the top coat liquid. The specific composition of the film forming treatment liquid will be described later.

  Subsequently, as shown in FIG. 1D, a solution for dissolving the treatment film is supplied to the treatment film peeled from the wafer W. Thereby, the treatment film is dissolved, and the particles P taken in the treatment film are in a floating state in the dissolution treatment liquid. After that, the particles P are removed from the wafer W by washing away the dissolution treatment liquid or the dissolved treatment film with pure water or the like (see FIG. 1E).

  As described above, in the substrate cleaning method according to the present embodiment, the processing film formed on the wafer W is peeled from the wafer W in a “film” state so that the particles P attached to the pattern and the like are removed together with the processing film. It was decided to remove from W.

  Therefore, according to the substrate cleaning method according to the present embodiment, particle removal is performed without using a chemical action, so that erosion of the base film due to an etching action or the like can be suppressed.

  In addition, according to the substrate cleaning method according to the present embodiment, the particles P can be removed with a weak force as compared with the conventional substrate cleaning method using physical force, so that pattern collapse can also be suppressed.

  Furthermore, according to the substrate cleaning method according to the present embodiment, it is possible to easily remove particles P having a small particle diameter, which are difficult to remove by the conventional substrate cleaning method using physical force.

  In the substrate cleaning method according to the present embodiment, after the processing film is formed on the wafer W, it is completely removed from the wafer W without performing pattern exposure. Therefore, the cleaned wafer W is in a state before the film-forming treatment liquid is applied, that is, a state where the pattern forming surface is exposed.

<Composition for substrate cleaning>
Next, the film forming solution described above will be specifically described. Hereinafter, the film-forming treatment liquid may be referred to as “substrate cleaning composition”.

（式（１）中、Ｒ^１、Ｒ^２はそれぞれ独立して水素原子、フッ素原子、炭素数１〜８のアルキル基又はフッ素化アルキル基を表す。ただし、Ｒ^１又はＲ^２の少なくともいずれか１つはフッ素原子または炭素数１〜８のフッ素化アルキル基である。＊は重合体を構成する他原子との結合部位を表す。） The composition for substrate cleaning contains [A] a solvent and [B] a polymer. [B] Since the polymer has a partial structure represented by the following formula (1) as a polar group, the composition for substrate cleaning exhibits appropriate wetting and spreading on the substrate surface, and the formed treatment film is peeled off. It has an affinity for the treatment liquid and an appropriate dissolution rate, and it is presumed that the substrate is quickly removed while enclosing particles on the substrate surface, thereby realizing high removal efficiency.

(In Formula (1), R ¹ and R ² each independently represent a hydrogen atom, a fluorine atom, an alkyl group having 1 to 8 carbon atoms, or a fluorinated alkyl group, provided that at least one of R ^{1 and} R ² One is a fluorine atom or a fluorinated alkyl group having 1 to 8 carbon atoms. * Represents a bonding site with another atom constituting the polymer.)

  The composition for substrate cleaning may further contain a low molecular organic acid (hereinafter also simply referred to as “[C] organic acid”). Here, the low molecular organic acid means an acid that contains one or more carbon atoms in one molecule and does not have a repeating structure generated by polymerization or condensation reaction. Although molecular weight is not limited, it is generally 40 or more and 2000 or less. When the composition for substrate cleaning contains [C] organic acid, the removal from the substrate surface becomes easier. For example, compared to a treatment film formed on the surface of a silicon substrate, it takes time to remove a treatment film formed on the surface of a silicon nitride substrate having a SiN film as a base film and a titanium nitride substrate having a TiN film as a base film. There is a case. [C] By adding the organic acid, the time required for removing the treatment film can be shortened. The reason for this is not clear, but for example, the treatment film formed on the surface of the substrate may have a [B] polymer in which the [C] organic acid is dispersed, whereby the strength of the treatment film is moderately reduced. One reason is considered. As a result, it is considered that the treatment film can be easily removed even if the substrate has a strong interaction with the [B] polymer such as a silicon nitride substrate.

Further, the substrate cleaning composition may contain an optional component in addition to the components [A] to [C] as long as the effects of the present invention are not impaired.
Hereinafter, each component will be described.

<[A] solvent>
[A] A solvent is a component which dissolves a [B] polymer. [C] When adding an organic acid, it is preferable to dissolve the [C] organic acid.

  [A] Examples of the solvent include organic solvents such as alcohol solvents, ether solvents, ketone solvents, amide solvents, ester solvents, hydrocarbon solvents; water and the like.

  Examples of alcohol solvents include ethanol, isopropyl alcohol, amyl alcohol, 4-methyl-2-pentanol, cyclohexanol, 3,3,5-trimethylcyclohexanol, furfuryl alcohol, benzyl alcohol, diacetone alcohol, and the like. C1-C18 monohydric alcohol, ethylene glycol, propylene glycol, diethylene glycol, dipropylene glycol, triethylene glycol, tripropylene glycol, etc., C2-C12 bivalent alcohol, these partial ethers, etc. are mentioned. It is done.

  Examples of ether solvents include dialkyl ether solvents such as diethyl ether, dipropyl ether, dibutyl ether and diisoamyl ether, cyclic ether solvents such as tetrahydrofuran and tetrahydropyran, and aromatic ring-containing ether solvents such as diphenyl ether and anisole. Etc.

  Examples of ketone solvents include acetone, methyl ethyl ketone, methyl n-propyl ketone, methyl n-butyl ketone, diethyl ketone, methyl iso-butyl ketone, 2-heptanone, ethyl n-butyl ketone, methyl n-hexyl ketone. Chain ketone solvents such as di-iso-butyl ketone and trimethylnonanone, cyclic ketone solvents such as cyclopentanone, cyclohexanone, cycloheptanone, cyclooctanone and methylcyclohexanone, 2,4-pentanedione, and acetonyl Acetone, acetophenone, etc. are mentioned.

  Examples of amide solvents include cyclic amide solvents such as N, N′-dimethylimidazolidinone and N-methylpyrrolidone, N-methylformamide, N, N-dimethylformamide, N, N-diethylformamide, acetamide, Examples thereof include chain amide solvents such as N-methylacetamide, N, N-dimethylacetamide, and N-methylpropionamide.

  Examples of ester solvents include monovalent alcohol carboxylate solvents such as ethyl acetate, butyl acetate, benzyl acetate, cyclohexyl acetate, and ethyl lactate, monocarboxylates of alkylene glycol monoalkyl ethers, and dialkylene glycol monoalkyl ethers. Polyhydric alcohol partial ether carboxylate solvents such as monocarboxylate, cyclic ester solvents such as butyrolactone, carbonate solvents such as diethyl carbonate, polyvalent carboxylic acid alkyl ester solvents such as diethyl oxalate and diethyl phthalate, etc. Can be mentioned.

Examples of the hydrocarbon solvent include n-pentane, iso-pentane, n-hexane, iso-hexane, n-heptane, iso-heptane, 2,2,4-trimethylpentane, n-octane, iso-octane, and cyclohexane. , Aliphatic hydrocarbon solvents such as methylcyclohexane;
Fragrances such as benzene, toluene, xylene, mesitylene, ethylbenzene, trimethylbenzene, methylethylbenzene, n-propylbenzene, iso-propylbenzene, diethylbenzene, iso-butylbenzene, triethylbenzene, di-iso-propylbenzene and n-amylnaphthalene Group hydrocarbon solvents and the like.

  Of these, organic solvents are preferred. As the organic solvent, alcohol solvents and ether solvents are preferable, monoalcohol solvents and dialkyl ether solvents are more preferable, 4-methyl-2-pentanol, diisoamyl ether, propylene glycol monoethyl ether, ethoxypropanol, More preferred is ethyl lactate.

  [A] The content of water in the solvent is preferably 20% by mass or less, more preferably 5% by mass or less, further preferably 2% by mass or less, and particularly preferably 0% by mass. [A] By making the content rate of the water in a solvent below the said upper limit, the intensity | strength of the process film formed can be reduced more appropriately, As a result, particle removal performance can be improved.

  [A] As a minimum of content of a solvent, 50 mass% is preferred, 60 mass% is more preferred, and 70 mass% is still more preferred. As an upper limit of the said content, 99.9 mass% is preferable, 99 mass% is more preferable, 95 mass% is further more preferable. [A] By setting the content of the solvent between the above lower limit and the upper limit, the substrate cleaning composition further improves the particle removal performance with respect to the silicon nitride substrate. The substrate cleaning composition may contain one or more [A] solvents.

（式（１）中、Ｒ^１、Ｒ^２はそれぞれ独立して水素原子、フッ素原子、炭素数１〜８のアルキル基又はフッ素化アルキル基を表す。ただし、Ｒ^１又はＲ^２の少なくともいずれか１つはフッ素原子または炭素数１〜８のフッ素化アルキル基である。＊は重合体を構成する他原子との結合部位を表す。） <[B] polymer>
[B] The polymer is a polymer that is soluble in the [A] solvent. [B] The polymer has a partial structure represented by the following formula (1).

(In Formula (1), R ¹ and R ² each independently represent a hydrogen atom, a fluorine atom, an alkyl group having 1 to 8 carbon atoms, or a fluorinated alkyl group, provided that at least one of R ^{1 and} R ² One is a fluorine atom or a fluorinated alkyl group having 1 to 8 carbon atoms. * Represents a bonding site with another atom constituting the polymer.)

上記式（２）中、Ｒ’は、水素原子、フッ素原子、メチル基又はトリフルオロメチル基である。Ｒｆは、上記式（１）で表される基又は上記式（１）で表される部分構造を含む基である。 Although the kind of polymer is not particularly limited, cyclic polyolefin and poly (meth) acrylate are preferable from the viewpoint of easy synthesis and improved removability. In the case of using poly (meth) acrylate, preferred polymers include polymers having a structural unit containing a fluorine atom represented by the following formula (2) (hereinafter also referred to as “structural unit (I)”). It is done.

In said formula (2), R 'is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. Rf is a group containing a group represented by the above formula (1) or a partial structure represented by the above formula (1).

  R ′ is preferably a hydrogen atom or a methyl group, more preferably a methyl group, from the viewpoint of copolymerization of the monomer that gives the structural unit (I).

Examples of the group represented by Rf include, for example,
Hydroxy-substituted fluorine having 1 to 20 carbon atoms such as hydroxydi (trifluoromethyl) methyl group, hydroxydi (trifluoromethyl) ethyl group, hydroxydi (trifluoromethyl) propyl group, hydroxydi (trifluoromethyl) butyl group A chain hydrocarbon group;
Hydroxy-substituted fluorinated alicyclic hydrocarbon groups such as hydroxytetrafluorocyclopentyl group, hydroxytetrafluorocyclohexyl group;
Examples include hydroxy-substituted fluorinated aromatic hydrocarbon groups such as hydroxyphenyldifluoromethyl group.

  Among these, Rf is preferably a hydroxy-substituted fluorinated chain hydrocarbon group, more preferably a hydroxydi (trifluoromethyl) butyl group.

  As a content rate of structural unit (I), 10 mol%-100 mol% are preferable with respect to all the structural units which comprise a [B] polymer, 50 mol%-100 mol% are more preferable, 90 mol% -100 mol% is more preferable, and 95 mol%-100 mol% is especially preferable. By making the content rate of structural unit (I) into the said range, the removal property of a process film | membrane can be improved more.

  [B] The polymer further comprises as structural unit (II) a structural unit containing a fluoroalkyl group, a structural unit containing a β-diketone structure, a structural unit containing a carboxy group, a structural unit containing a sulfo group, and a sulfonamide group. Structural unit containing, structural unit derived from alkyl (meth) acrylate, structural unit containing monocyclic or polycyclic lactone skeleton, structural unit containing hydroxy group, structural unit containing aromatic ring or structural unit containing acid dissociable group Etc. may be included. When the structural unit (II) contains a fluoroalkyl group, the content of the structural unit (II) in the [B] polymer is preferably 50 mol% or less, more preferably less than 30 mol%, particularly preferably less than 10 mol%. preferable. When the proportion of the structural unit (II) containing a fluoroalkyl group exceeds 50 mol%, the removability of the treated film tends to decrease particularly when the [C] organic acid described later is not added.

  [B] The acid dissociation constant of the polymer is preferably smaller than the acid dissociation constant of [C] organic acid described later. By making the acid dissociation constant of the [B] polymer smaller than that of the [C] organic acid, the removability of the treatment film from the substrate surface can be further enhanced. [B] The acid dissociation constant of the polymer and [C] organic acid can be determined by a known titration method. In evaluating the relative magnitude of the acid dissociation constant, the acid dissociation constant may be obtained from a calculated value using chemical calculation software as a simpler method than the titration method. For example, the calculation can be performed using a program provided by Chem Axon.

  As a minimum of content of [B] polymer in a constituent for substrate washing, 0.1 mass% is preferred, 0.5 mass% is more preferred, and 1 mass% is still more preferred. As an upper limit of the said content, 50 mass% is preferable, 30 mass% is more preferable, and 15 mass% is further more preferable. By making the said content between the said minimum and the said upper limit, the removability from the substrate surface of a process film can further be improved.

  The lower limit of the content of the [B] polymer with respect to the total solid content in the substrate cleaning composition is preferably 30% by mass, more preferably 40% by mass, and even more preferably 50% by mass. As an upper limit of the said content, 99 mass% is preferable, 98 mass% is more preferable, and 96 mass% is further more preferable.

<[C] Organic acid>
The composition for substrate cleaning may further contain [C] an organic acid. [C] By adding the organic acid, it becomes easier to remove the treatment film formed on the substrate surface. [C] The organic acid is preferably not a polymer. Here, “not a polymer” means having no repeating unit. [C] The upper limit of the molecular weight of the organic acid is, for example, 500, preferably 400, and more preferably 300. [C] The lower limit of the molecular weight of the organic acid is, for example, 50 and 55 is preferable.

[C] As an organic acid, for example,
Monocarboxylic acids such as acetic acid, propionic acid, butanoic acid, pentanoic acid, hexanoic acid, cyclohexanecarboxylic acid, cyclohexylacetic acid, 1-adamantanecarboxylic acid, benzoic acid, phenylacetic acid;
Fluorine atom-containing monocarboxylic acids such as difluoroacetic acid, trifluoroacetic acid, pentafluoropropanoic acid, heptafluorobutanoic acid, fluorophenylacetic acid, difluorobenzoic acid;
Heteroatom-containing monocarboxylic acids such as 10-hydroxydecanoic acid, thiolacetic acid, 5-oxohexanoic acid, 3-methoxycyclohexanecarboxylic acid, camphorcarboxylic acid, dinitrobenzoic acid, nitrophenylacetic acid;
Monocarboxylic acids such as (meth) acrylic acid, crotonic acid, cinnamic acid and other double bond-containing monocarboxylic acids;
Polycarboxylic acids such as oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, dodecanedicarboxylic acid, propanetricarboxylic acid, butanetetracarboxylic acid, hexafluoroglutaric acid, cyclohexanehexacarboxylic acid, 1,4-naphthalenedicarboxylic acid ;
Examples include partially esterified products of the above polycarboxylic acids.

  [C] The lower limit of the solubility of the organic acid in water at 25 ° C. is preferably 5% by mass, more preferably 7% by mass, and still more preferably 10% by mass. The upper limit of the solubility is preferably 50% by mass, more preferably 40% by mass, and further preferably 30% by mass. By setting the solubility between the lower limit and the upper limit, it is possible to more easily remove the formed treatment film.

  [C] The organic acid is preferably solid at 25 ° C. When the [C] organic acid is solid at 25 ° C., it is considered that the solid [C] organic acid is precipitated in the treatment film formed from the substrate cleaning composition, and the removability is further improved.

  [C] The organic acid is preferably a polyvalent carboxylic acid, more preferably oxalic acid, malic acid, or citric acid from the viewpoint of facilitating removal of the treated film.

As a minimum of content of [C] organic acid in a constituent for substrate cleaning, 0.01 mass% is preferred, 0.05 mass% is more preferred, and 0.1 mass% is still more preferred. As an upper limit of the said content, 30 mass% is preferable, 20 mass% is more preferable, and 10 mass% is further more preferable.
The lower limit of the content of [C] organic acid relative to the total solid content in the substrate cleaning composition is preferably 0.5% by mass, more preferably 1% by mass, and even more preferably 3% by mass. As an upper limit of the said content, 30 mass% is preferable, 20 mass% is more preferable, and 10 mass% is further more preferable.
[C] By making the content of the organic acid between the lower limit and the upper limit, the treatment film can be removed more easily.

<Optional component>
The composition for substrate cleaning may contain an optional component other than the above [A] to [C] components. Examples of the optional component include a surfactant.

Examples of the surfactant include polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene n-octylphenyl ether, polyoxyethylene n-nonylphenyl ether, polyethylene glycol dilaurate, polyethylene Nonionic surfactants such as glycol distearate are listed.
As content of the said surfactant, it is 2 mass% or less normally, and 1 mass% or less is preferable.

<Configuration of substrate cleaning system>
Next, the configuration of the substrate cleaning system according to the present embodiment will be described with reference to FIG. FIG. 3 is a schematic diagram showing the configuration of the substrate cleaning system according to the present embodiment. In the following, in order to clarify the positional relationship, the X axis, the Y axis, and the Z axis that are orthogonal to each other are defined, and the positive direction of the Z axis is the vertically upward direction.

  As shown in FIG. 3, the substrate cleaning system 1 includes a carry-in / out station 2 and a processing station 3. The carry-in / out station 2 and the processing station 3 are provided adjacent to each other.

  The carry-in / out station 2 includes a carrier placement unit 11 and a transport unit 12. A plurality of transfer containers (hereinafter referred to as “carrier C”) that can store a plurality of wafers W in a horizontal state are placed on the carrier placement unit 11.

  The transport unit 12 is provided adjacent to the carrier placement unit 11. A substrate transfer device 121 and a delivery unit 122 are provided inside the transfer unit 12.

  The substrate transfer device 121 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 121 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and transfers the wafer W between the carrier C and the delivery unit 122 using a wafer holding mechanism. Do.

  The processing station 3 is provided adjacent to the transfer unit 12. The processing station 3 includes a transfer unit 13 and a plurality of substrate cleaning apparatuses 14. The plurality of substrate cleaning apparatuses 14 are provided side by side on both sides of the transport unit 13.

  The transport unit 13 includes a substrate transport device 131 inside. The substrate transfer device 131 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 131 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and the wafer W can be transferred between the delivery unit 122 and the substrate cleaning device 14 using a wafer holding mechanism. Transport.

  The substrate cleaning apparatus 14 is an apparatus that executes a substrate cleaning process based on the above-described substrate cleaning method. A specific configuration of the substrate cleaning apparatus 14 will be described later.

  The substrate cleaning system 1 includes a control device 4. The control device 4 is a device that controls the operation of the substrate cleaning system 1. The control device 4 is a computer, for example, and includes a control unit 15 and a storage unit 16. The storage unit 16 stores a program for controlling various processes such as a substrate cleaning process. The control unit 15 controls the operation of the substrate cleaning system 1 by reading and executing the program stored in the storage unit 16. The control unit 15 is, for example, a CPU (Central Processing Unit) or an MPU (Micro Processor Unit), and the storage unit 16 is, for example, a ROM (Read Only Memory), a RAM (Random Access Memory), or the like.

  Such a program may be recorded on a computer-readable storage medium and may be installed in the storage unit 16 of the control device 4 from the storage medium. Examples of the computer-readable storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

  In the substrate cleaning system 1 configured as described above, first, the substrate transfer device 121 of the carry-in / out station 2 takes out the wafer W from the carrier C and places the taken-out wafer W on the delivery unit 122. The wafer W placed on the delivery unit 122 is taken out from the delivery unit 122 by the substrate transfer device 131 of the processing station 3 and carried into the substrate cleaning device 14, and the substrate cleaning process is performed by the substrate cleaning device 14. The cleaned wafer W is unloaded from the substrate cleaning device 14 by the substrate transfer device 131 and placed on the delivery unit 122, and then returned to the carrier C by the substrate transfer device 121.

<Configuration of substrate cleaning device>
Next, the configuration of the substrate cleaning apparatus 14 will be described with reference to FIG. FIG. 4 is a schematic diagram showing a configuration of the substrate cleaning apparatus 14 according to the present embodiment.

  As shown in FIG. 4, the substrate cleaning apparatus 14 includes a chamber 20, a substrate holding mechanism 30, a liquid supply unit 40, and a recovery cup 50.

  The chamber 20 accommodates the substrate holding mechanism 30, the liquid supply unit 40, and the recovery cup 50. An FFU (Fan Filter Unit) 21 is provided on the ceiling of the chamber 20. The FFU 21 forms a down flow in the chamber 20.

  The FFU 21 is connected to the downflow gas supply source 23 via the valve 22. The FFU 21 discharges downflow gas (for example, dry air) supplied from the downflow gas supply source 23 into the chamber 20.

  The substrate holding mechanism 30 includes a rotation holding unit 31, a support unit 32, and a drive unit 33. The rotation holding unit 31 is provided in the approximate center of the chamber 20. A holding member 311 that holds the wafer W from the side surface is provided on the upper surface of the rotation holding unit 31. The wafer W is horizontally held by the holding member 311 while being slightly separated from the upper surface of the rotation holding unit 31.

  The support | pillar part 32 is a member extended in a perpendicular direction, a base end part is rotatably supported by the drive part 33, and supports the rotation holding | maintenance part 31 horizontally in a front-end | tip part. The drive unit 33 rotates the column unit 32 around the vertical axis.

  The substrate holding mechanism 30 rotates the rotation holding unit 31 supported by the column unit 32 by rotating the column unit 32 using the driving unit 33, and thereby the wafer W held by the rotation holding unit 31 is rotated. Rotate.

  The liquid supply unit 40_1 supplies various processing liquids to the wafer W held by the substrate holding mechanism 30. The liquid supply unit 40_1 includes nozzles 41_1 to 41_3, an arm 42_1 that horizontally supports the nozzles 41_1 to 41_3, and a turning lift mechanism 43_1 that turns and lifts the arm 42_1.

  The nozzle 41_1 supplies the organic solvent via the flow regulator 46a and the valve 44a to the DIW supply source 45a, to the alkaline aqueous solution supply source 45b via the flow regulator 46b and the valve 44b, and to the organic solvent via the flow regulator 46c and the valve 44c. Each is connected to a source 45c.

  From the nozzle 41_1, DIW supplied from the DIW supply source 45a, alkaline aqueous solution supplied from the alkaline aqueous solution supply source 45b, or organic solvent supplied from the organic solvent supply source 45c is discharged. For example, when the valve 44a and the valve 44b are opened, a mixed solution of DIW and an alkaline aqueous solution, that is, a diluted alkaline aqueous solution is discharged from the nozzle 41_1. For example, when the valve 44a and the valve 44c are opened, a mixed liquid of DIW and an organic solvent, that is, a diluted organic solvent is discharged from the nozzle 41_1. These mixing ratios are adjusted by the control unit 15 controlling the flow rate adjusters 46a to 46c.

  DIW is an example of a peeling treatment liquid that peels the treatment film from the wafer W. The alkaline aqueous solution is an example of a solution for dissolving the treatment film. The alkaline aqueous solution is, for example, an alkaline developer. The alkaline developer may contain, for example, at least one of aqueous ammonia, quaternary ammonium hydroxide solution such as tetramethylammonium hydroxide (TMAH), and choline solution.

  The organic solvent is another example of the solution for dissolving the treatment film. As the organic solvent, for example, thinner, IPA (isopropyl alcohol), MIBC (4-methyl-2-pentanol), toluene, acetate esters, alcohols, glycols (propylene glycol monomethyl ether) and the like can be used.

  The nozzle 41_2 is connected to the DIW supply source 45d via the valve 44d, and discharges DIW supplied from the DIW supply source 45d. DIW discharged from the nozzle 41_2 is an example of a rinse treatment liquid used in a rinse treatment described later.

  The nozzle 41_3 is connected to the IPA supply source 45e via the valve 44e, and discharges IPA supplied from the IPA supply source 45e. IPA is an example of a dry solvent used in the drying process described below.

  The liquid supply unit 40_2 includes nozzles 41_4 and 41_5, an arm 42_2 that horizontally supports the nozzles 41_4 and 41_5, and a turning lift mechanism 43_2 that turns and lifts the arm 42_2.

  The nozzle 41_4 is connected to the pretreatment liquid supply source 45f via the valve 44f, and discharges the pretreatment liquid supplied from the pretreatment liquid supply source 45f. The pretreatment liquid is, for example, a [A] solvent contained in the film forming treatment liquid. [A] The solvent is supplied to the wafer W before the film formation processing liquid is supplied in order to make it easy to spread the film formation processing liquid on the wafer W. Further, the pretreatment liquid may be, for example, ozone water. The ozone water is used for a hydrophilic treatment for making the surface of the wafer W hydrophilic.

  Here, the substrate cleaning apparatus 14 includes one nozzle 41_4 as a nozzle for discharging the pretreatment liquid. However, the substrate cleaning apparatus 14 includes [A] a nozzle for discharging a solvent and hydrophilization of ozone water or the like. And a nozzle for discharging the treatment liquid.

  The nozzle 41_5 is connected to the A + B supply source 45g via the flow rate regulator 46g and the valve 44g, and to the C supply source 45h via the flow rate regulator 46h and the valve 44h.

  A mixed solution of [A] solvent and [B] polymer is supplied from 45 g of the A + B supply source. [C] Organic acid is supplied from the C supply source 45h. These are mixed in the flow path leading to the nozzle 41_5 to become a film forming treatment liquid, and are discharged from the nozzle 41_5. The mixing ratio of the mixed solution of [A] solvent and [B] polymer and [C] organic acid is adjusted by the control unit 15 controlling the flow rate regulators 46g and 46h.

  If the [A] solvent, the [B] polymer, and the [C] organic acid are mixed from the beginning, the [C] organic acid may be precipitated due to a change with time. Therefore, as described above, the mixture of [A] solvent and [B] polymer and [C] organic acid are mixed immediately before being discharged from the nozzle 41_5, so that [C] organic acid is precipitated. Can be suppressed.

  A mixing tank may be provided in the middle of the flow path, and the mixed solution of [A] solvent and [B] polymer and [C] organic acid may be mixed in this mixing tank.

  The nozzle 41_1, the arm 42_1, the swivel elevating mechanism 43_1, the valves 44a to 44c, the DIW supply source 45a, the alkaline aqueous solution supply source 45b, the organic solvent supply source 45c, and the flow rate regulators 46a to 46c are examples of the “removed solution supply unit”. is there. Among these, the nozzle 41_1, the arm 42_1, the swivel raising / lowering mechanism 43_1, the valve 44a, and the DIW supply source 45a are examples of the “peeling treatment liquid supply unit”. 44c) and the alkaline aqueous solution supply source 45b (organic solvent supply source 45c) are examples of the “dissolution treatment liquid supply unit”.

  The nozzle 41_1, the arm 42_1, the swivel raising / lowering mechanism 43_1, the valve 44b, and the alkaline aqueous solution supply source 45b are examples of “alkaline aqueous solution supply unit”. The source 45d is an example of a “rinsing liquid supply unit”.

  Further, the nozzle 41_5, the arm 42_2, the swivel raising / lowering mechanism 43_2, the valves 44g and 44h, the A + B supply source 45g, the C supply source 45h, and the flow rate regulators 46g and 46h are examples of the “film formation processing solution supply unit”.

  Here, the liquid supply unit 40_1 and the liquid supply unit 40_2 each include a plurality of nozzles 41_1 to 41_5. However, the liquid supply unit 40_1 and the liquid supply unit 40_2 may each include one nozzle.

  The collection cup 50 is disposed so as to surround the rotation holding unit 31 and collects the processing liquid scattered from the wafer W by the rotation of the rotation holding unit 31. A drain port 51 is formed at the bottom of the recovery cup 50, and the processing liquid collected by the recovery cup 50 is discharged from the drain port 51 to the outside of the substrate cleaning apparatus 14. Further, an exhaust port 52 for discharging the downflow gas supplied from the FFU 21 to the outside of the substrate cleaning apparatus 14 is formed at the bottom of the recovery cup 50.

<Specific operation of substrate cleaning system>
Next, a specific operation of the substrate cleaning apparatus 14 will be described with reference to FIG. FIG. 5 is a flowchart showing a processing procedure of the substrate cleaning process executed by the substrate cleaning system 1 according to the present embodiment. Each apparatus provided in the substrate cleaning system 1 executes each processing procedure shown in FIG.

  In the following, the substrate cleaning process in the case where any one of the compositions of Examples 12 to 16 described later is used as the film forming process liquid will be described.

  As shown in FIG. 5, in the substrate cleaning apparatus 14, first, a substrate carry-in process is performed (step S101). In such substrate carry-in processing, the wafer W carried into the chamber 20 by the substrate carrying device 131 (see FIG. 3) is held by the holding member 311 of the substrate holding mechanism 30. At this time, the wafer W is held by the holding member 311 with the pattern forming surface facing upward. Thereafter, the rotation holding unit 31 is rotated by the drive unit 33. Thereby, the wafer W rotates together with the rotation holding unit 31 while being held horizontally by the rotation holding unit 31.

  Subsequently, the substrate cleaning apparatus 14 performs preprocessing (step S102). For example, when the pre-wet process is performed as the pre-process, the nozzle 41_4 of the liquid supply unit 40_2 is located above the center of the wafer W. Thereafter, the valve 44f is opened for a predetermined time, whereby the [A] solvent, which is a pretreatment liquid, is supplied to the pattern formation surface of the wafer W on which no resist is formed. The [A] solvent supplied to the wafer W spreads on the pattern forming surface of the wafer W due to the centrifugal force accompanying the rotation of the wafer W.

  In this way, by spreading the [A] solvent having affinity with the film forming treatment liquid on the wafer W in advance, the film forming treatment liquid is transferred to the wafer in the film forming treatment liquid supply process (step S103) described later. It becomes easy to spread on the upper surface of W and also easily enters a gap between patterns. Therefore, it is possible to reduce the amount of film forming treatment liquid used and more reliably remove the particles P that have entered the gaps in the pattern. Further, it is possible to shorten the processing time of the film forming process liquid supply process.

  Further, when the hydrophilic treatment is performed as the pretreatment, the nozzle 41_4 of the liquid supply unit 40_2 is positioned above the center of the wafer W. Thereafter, the valve 44f is opened for a predetermined time, so that ozone water, which is a pretreatment liquid, is supplied to the pattern formation surface of the wafer W on which no resist is formed. The ozone water supplied to the wafer W spreads on the pattern forming surface of the wafer W due to the centrifugal force accompanying the rotation of the wafer W. Thereby, the pattern formation surface of the wafer W is hydrophilized.

  As described above, by performing the hydrophilic treatment, the peeling treatment liquid easily penetrates into the interface (pattern forming surface) of the hydrophilic wafer W, and therefore, the removability of the treatment film can be further improved. In the case where the hydrophilic treatment is performed as a pretreatment, for example, hydrogen peroxide water may be used as the pretreatment liquid instead of ozone water. Note that the preprocessing in step S102 is not necessarily performed.

  Subsequently, in the substrate cleaning apparatus 14, a film forming process liquid supply process is performed (step S103). In the film forming process liquid supply process, the nozzle 41_5 of the liquid supply unit 40_2 is positioned above the center of the wafer W. Thereafter, the valves 44g and 44h are opened for a predetermined time, whereby the mixed solution of [A] solvent and [B] polymer and [C] organic acid are respectively supplied to the flow path to the nozzle 41_5. These are mixed in the flow path to become a film forming treatment liquid, and supplied to the pattern forming surface of the wafer W on which no resist is formed. As described above, the film forming treatment liquid is supplied onto the wafer W without passing through the resist.

  The film forming treatment liquid supplied to the wafer W spreads on the surface of the wafer W due to the centrifugal force accompanying the rotation of the wafer W. As a result, a liquid film of the film forming treatment liquid is formed on the pattern forming surface of the wafer W. The film thickness of the formed treatment film is preferably 10 nm to 5,000 nm, and more preferably 20 nm to 500 nm.

  Subsequently, in the substrate cleaning device 14, a drying process is performed (step S104). In such a drying process, for example, the film forming process liquid is dried by increasing the rotation speed of the wafer W for a predetermined time. Thereby, for example, part or all of the organic solvent contained in the film forming treatment liquid is vaporized, and the solid content contained in the film forming treatment liquid is solidified or hardened, and a treatment film is formed on the pattern forming surface of the wafer W. .

  Note that the drying process in step S103 may be, for example, a process for reducing the pressure in the chamber 20 with a decompression device (not shown), or a process for reducing the humidity in the chamber 20 with the downflow gas supplied from the FFU 21. It may be. Also by these treatments, the film forming treatment liquid can be solidified or cured.

  Further, the substrate cleaning apparatus 14 may cause the substrate cleaning apparatus 14 to wait until the film-forming treatment liquid is naturally solidified or cured. Further, the film formation processing liquid is solidified by stopping the rotation of the wafer W or rotating the wafer W at a rotation speed that does not expose the surface of the wafer W by shaking the film formation processing liquid. It may be cured.

  Subsequently, the substrate cleaning apparatus 14 performs a removal process (step S105). In the removal process, the treatment film formed on the wafer W is removed. Thereby, the particles P on the wafer W are removed together with the processing film. Specific contents of the removal process will be described later.

  Subsequently, in the substrate cleaning apparatus 14, a drying process is performed on the wafer W that has been subjected to the rinse process in step S105 (step S106). In such a drying process, the nozzle 41_3 of the liquid supply unit 40_1 is positioned above the center of the wafer W. Thereafter, the valve 44e is opened for a predetermined time, whereby IPA as a dry solvent is supplied onto the wafer W. Thereby, DIW on the wafer W is replaced with IPA. In the drying process, the rotation speed of the wafer W is increased for a predetermined time, so that the IPA remaining on the surface of the wafer W is shaken off and the wafer W is dried. Thereafter, the rotation of the wafer W is stopped.

  Subsequently, in the substrate cleaning apparatus 14, a substrate carry-out process is performed (step S107). In such substrate carry-out processing, the wafer W is taken out from the chamber 20 of the substrate cleaning device 14 by the substrate transfer device 131 (see FIG. 3). Thereafter, the wafer W is accommodated in the carrier C placed on the carrier placement unit 11 via the delivery unit 122 and the substrate transfer device 121. When the substrate carry-out process is completed, the substrate cleaning process for one wafer W is completed.

  Next, a specific example of the removal process in step S105 will be described. Here, when any of the compositions of Examples 12 to 16 is used as a film-forming treatment liquid, there are alkali-soluble and sparingly soluble substances depending on the composition ratio of the polymers (M1 to M10). To do. Therefore, hereinafter, a removal process in the case of using a film-forming treatment solution soluble in alkali and a removal process in the case of using a film-forming treatment solution hardly soluble in alkali will be described.

  First, an example of a removal process in the case of using an alkali-soluble film forming process liquid will be described with reference to FIG. FIG. 6 is a flowchart showing the processing procedure of the removal process in the case of using an alkali-soluble film forming solution.

  As shown in FIG. 6, in the substrate cleaning apparatus 14, a DIW supply process is first performed (step S201). In the DIW supply process, the nozzle 41_1 of the liquid supply unit 40_1 is positioned above the center of the wafer W. Thereafter, the valve 44a is opened for a predetermined time, whereby DIW, which is a peeling treatment liquid, is supplied to the treatment film formed on the wafer W. The DIW supplied to the processing film spreads on the processing film due to the centrifugal force accompanying the rotation of the wafer W.

  The DIW penetrates into the processing film, reaches the interface between the processing film and the wafer W, and peels the processing film from the wafer W. Thereby, the particle P adhering to the pattern formation surface of the wafer W is peeled from the wafer W together with the treatment film.

  Here, as described above, the film-forming treatment liquid contains a solvent and a polymer having a partial structure represented by the formula (1). By using such a film forming treatment liquid, the removability of the treatment film from the wafer W is improved, so that the removal performance of the particles P on the wafer W can be improved.

  In addition, since the film-forming treatment liquid has a high removability of the treatment film, it can be applied to substrates made of various materials. Examples of applicable substrates include silicon substrates, aluminum substrates, nickel substrates, chromium substrates, molybdenum substrates, tungsten substrates, copper substrates, tantalum substrates, titanium substrates and other metal or semi-metal substrates; silicon nitride substrates, alumina substrates, dioxide substrates Examples include a silicon substrate, a tantalum nitride substrate, and a ceramic substrate such as titanium nitride. Among these, a silicon substrate, a silicon nitride substrate, and a titanium nitride substrate are preferable, and a silicon nitride substrate is more preferable.

  Subsequently, in the substrate cleaning apparatus 14, an alkaline aqueous solution supply process is performed (step S202). In such an alkaline aqueous solution supply process, the valve 44b is opened for a predetermined time, whereby an alkaline aqueous solution that is a dissolution processing liquid is supplied to the processing film peeled from the wafer W. Thereby, the treatment film is dissolved.

  When an alkaline aqueous solution is used as the dissolution treatment liquid, a zeta potential having the same polarity can be generated on the wafer W and the particles P. Thereby, since the wafer W and the particle P come to repel each other, the reattachment of the particle P to the wafer W can be prevented.

  Subsequently, the substrate cleaning apparatus 14 performs a rinsing process (step S203). In the rinsing process, the nozzle 41_2 of the liquid supply unit 40_1 is positioned above the center of the wafer W. Thereafter, the valve 44d is opened for a predetermined time, so that DIW is supplied as a rinse liquid to the rotating wafer W. Thereby, the dissolved processing film and the particles P floating in the alkaline aqueous solution are removed from the wafer W together with DIW. Thereby, the removal process ends, and the process proceeds to the drying process in step S106.

  As described above, when an alkali-soluble film forming treatment solution is used, the treatment film can be dissolved by using an alkaline aqueous solution as the dissolving treatment solution.

  Next, an example of the removal process in the case of using a film-forming solution that is hardly soluble in alkali will be described with reference to FIG. FIG. 7 is a flowchart showing the processing procedure of the removal process in the case of using a film-forming process liquid that is hardly soluble in alkali.

  As shown in FIG. 7, in the substrate cleaning apparatus 14, first, DIW supply processing similar to step S201 described above is performed (step S301).

  Subsequently, in the substrate cleaning device 14, an organic solvent supply process is performed (step S302). In such organic solvent supply processing, the valve 44c is opened for a predetermined time, whereby the organic solvent that is the dissolution processing liquid is supplied to the processing film peeled from the wafer W. Thereby, the treatment film is dissolved.

  Subsequently, the substrate cleaning apparatus 14 performs the same rinsing process as step S203 (step S303). Thereby, the removal process ends, and the process proceeds to the drying process in step S106.

  Thus, when using a film-forming treatment liquid that is hardly soluble in alkali, the treatment film can be dissolved by using an organic solvent such as thinner as the dissolution treatment liquid. Further, since no alkaline aqueous solution is used, damage to the wafer W and the base film can be further suppressed.

  Here, the rinsing process (step S303) is performed after the organic solvent supply process (step S302). However, since the organic solvent is volatilized on the wafer W, the rinsing process (step S303) is not necessarily performed. I don't need it.

  Next, a modified example of the removal process in the case of using a film forming solution that is hardly soluble in alkali will be described with reference to FIG. FIG. 8 is a flowchart showing a modification (No. 1) of the removal process in the case of using a film-forming process liquid that is hardly soluble in alkali.

  As shown in FIG. 8, the substrate cleaning apparatus 14 first performs a DIW supply process (step S401), and then performs an organic solvent supply process (step S402). These processes are the same as the processes in steps S301 and S302 described above.

  Subsequently, in the substrate cleaning apparatus 14, an alkaline aqueous solution supply process (step S403) is performed. In the alkaline aqueous solution supply process, the nozzle 41_1 of the liquid supply unit 40_1 is positioned above the center of the wafer W. Thereafter, the valve 44b is opened for a predetermined time, whereby an alkaline aqueous solution is supplied to the wafer W. Thereafter, in the substrate cleaning apparatus 14, the same rinsing process (step S404) as that in step S303 is performed, and the removal process is completed.

  In this way, the alkaline aqueous solution may be supplied to the wafer W after the organic solvent supply process. By supplying the alkaline aqueous solution, a zeta potential having the same polarity can be generated on the wafer W and the particles P. Thereby, since the wafer W and the particle P come to repel each other, the reattachment of the particle P to the wafer W can be prevented.

  Next, another modification of the removal process in the case of using a film-forming process liquid that is hardly soluble in alkali will be described with reference to FIG. FIG. 9 is a flowchart showing a modification (No. 2) of the removal process in the case of using a film-forming solution that is hardly soluble in alkali.

  As shown in FIG. 9, in the substrate cleaning apparatus 14, first, DIW supply processing similar to that in step S301 is performed (step S501).

  Subsequently, in the substrate cleaning apparatus 14, an alkaline aqueous solution supply process is performed (step S502). In the alkaline aqueous solution supply process, the nozzle 41_1 of the liquid supply unit 40_1 is positioned above the center of the wafer W. Thereafter, the valve 44b is opened for a predetermined time, whereby an alkaline aqueous solution is supplied to the wafer W. Thereafter, in the substrate cleaning apparatus 14, an organic solvent supply process (step S503) similar to step S302 and a rinse process (step S504) similar to step S303 are performed, and the removal process ends. Note that the rinsing process in step S504 may be omitted.

  In this way, the alkaline aqueous solution may be supplied to the wafer W after the DIW supply processing. There is a possibility that a specific component contained in the processing film partially remains on the wafer W after the DIW supply processing. Among these specific components, components soluble in an alkaline aqueous solution are also included. On the other hand, as in this modification, by supplying an alkaline aqueous solution to the wafer W after the DIW supply processing, components soluble in the alkaline aqueous solution among the components of the processing film remaining on the wafer W are dissolved. Can be removed. Therefore, according to this modification, the film residue of the treatment film can be suppressed.

  The substrate cleaning apparatus 14 may perform the alkaline aqueous solution supply process similar to step S403 after the organic solvent supply process (step S503).

  In each example of the removal process described above, the process film on the wafer W is peeled off from the wafer W by the DIW supply process, and then the process film is dissolved by performing an alkaline aqueous solution supply process or an organic solvent supply process. However, the present invention is not limited to this, and the process of peeling the treatment film from the wafer W and the process of dissolving the peeled treatment film may be performed in one step in parallel. This point will be described with reference to FIG.

  FIG. 10 is a flowchart illustrating a modification of the removal process. Note that the processing procedure of the removal process shown in FIG. 10 can be applied to both the case where a film-forming treatment solution soluble in alkali is used and the case where a film-forming treatment solution hardly soluble in alkali is used.

  As shown in FIG. 10, the substrate cleaning apparatus 14 performs a removal liquid supply process (step S601). In the removal liquid supply process, the nozzle 41_1 of the liquid supply unit 40_1 is positioned above the center of the wafer W. Thereafter, one of the valve 44b and the valve 44c and the valve 44a are opened for a predetermined time, so that the diluted alkaline aqueous solution or organic solvent is supplied to the wafer W.

  Since the alkaline aqueous solution or the organic solvent has a low concentration, it can be peeled off from the wafer W without almost dissolving the treatment film. For this reason, as in the case where DIW is supplied, the particles P are peeled off from the wafer W together with the treatment film. Thereafter, the treatment film peeled off from the wafer W is dissolved by a low-concentration alkaline aqueous solution or an organic solvent. Thereafter, the same rinsing process (step S602) as in step S303 is performed, and the removal process ends. In addition, when using the diluted organic solvent as a removal liquid, the rinse process of step S602 does not necessarily need to be performed.

  As described above, by using the alkaline aqueous solution or organic solvent diluted with DIW as the removing liquid, the process of peeling the treatment film from the wafer W and the treatment of dissolving the peeled treatment film are performed in one step in parallel. be able to. Thereby, the time required for the substrate cleaning process can be shortened.

  In the substrate cleaning device 14, the concentration of the alkaline aqueous solution or the organic solvent may be gradually increased by controlling any of the flow rate adjusters 46a to 46c. For example, the substrate cleaning apparatus 14 may supply the second concentration (> first concentration) of the alkaline aqueous solution or organic solvent after supplying the first concentration of alkaline aqueous solution or organic solvent.

  As described above, the substrate processing system (corresponding to the substrate cleaning system 1) according to this embodiment includes a holding unit (corresponding to the substrate holding mechanism 30) and a removal liquid supply unit. The holding part is formed with a treatment film containing an organic solvent and a polymer containing a fluorine atom (more preferably having a partial structure represented by the above-described formula (1)) and being soluble in the organic solvent. Hold the substrate. The removal liquid supply unit supplies a removal liquid for removing the treatment film to the treatment film on the substrate.

  Therefore, according to the substrate processing system according to the present embodiment, high particle removal performance can be obtained.

(Other embodiments)
In the embodiment described above, an example in which the “film formation processing liquid supply unit” and the “removal liquid supply unit” are provided in one chamber 20 has been described. The “removal liquid supply unit” may be provided in a separate chamber. For example, the substrate cleaning system 1 includes a chamber (first chamber) in which the liquid supply unit 40_2 is removed from the substrate cleaning apparatus 14 illustrated in FIG. 4, and a chamber (first chamber) in which the liquid supply unit 40_1 is removed from the substrate cleaning apparatus 14 illustrated in FIG. A second chamber).

  Further, the substrate cleaning system 1 does not necessarily need to include the “film formation processing liquid supply unit”. That is, the substrate cleaning system 1 may perform the processes of steps S105 to S107 shown in FIG. 5 on the wafer W that has been subjected to the processes up to step S104 shown in FIG.

  In the embodiment described above, an example in which liquid DIW is used as the peeling treatment liquid has been described. However, the peeling treatment liquid may be a mist-like DIW.

  In the above-described embodiment, an example in which DIW is directly supplied to the treatment film by using a nozzle has been described. However, for example, by increasing the humidity in the chamber using a humidifier or the like, Alternatively, DIW may be indirectly supplied.

  In the embodiment described above, an example in which DIW, which is pure water at room temperature, is used as the peeling treatment liquid has been described. However, for example, heated pure water may be used as the peeling treatment liquid. Thereby, the removal property of a processing film can further be improved.

  In the embodiment described above, an example in which DIW is used as the peeling treatment liquid has been described. However, the type of the stripping treatment liquid is not limited as long as it is a combination that can execute the process of stripping the processing film formed on the wafer W without dissolving (or before the processing film is melted). For example, the stripping treatment liquid is CO2 water (DIW mixed with CO2 gas), an acid or alkaline aqueous solution, a surfactant-added aqueous solution, a fluorine-based solvent such as HFE (hydrofluoroether), diluted IPA (diluted with pure water) IPA: isopropyl alcohol) may be included.

  For example, it is assumed that the film-forming treatment liquid is composed so that a treatment film having low adhesion to the wafer W and easy to peel off is formed. In such a case, the treatment film to be formed is easy to peel off, but the water repellency is increased and it may be difficult to penetrate only with DIW. In such a case, a pure treatment such as diluted IPA is used as the peeling treatment liquid. It is preferable to use an organic solvent diluted with water (hereinafter referred to as “diluted organic solvent”).

  The case where a diluted organic solvent is used as the peeling treatment liquid will be described with reference to FIGS. FIG. 11 is a flowchart showing a modification of the removal process in the case where a diluted organic solvent is used as the peeling process liquid. 12A to 12C are explanatory views (No. 1) to (No. 3) of the diluted organic solvent supply process. FIG. 11 corresponds to FIG. 7 already shown. Moreover, illustration of a valve is omitted in FIGS.

  As shown in FIG. 11, when the diluted organic solvent is used as the stripping treatment liquid, the substrate cleaning apparatus 14 first performs a diluted organic solvent supply process instead of the DIW supply process in step S301 of FIG. Step S701).

  In the diluted organic solvent supply process, the diluted organic solvent having a concentration enough to penetrate the processed film without dissolving the processed film formed on the wafer W, for example, 10% or less in the case of diluted IPA, is used in the wafer. Supplied to W.

  As a result, it is possible to allow the peeling treatment liquid to permeate the processing film that has reached the deep part of the pattern formed on the wafer W. Therefore, even in the wafer W on which the pattern is formed, high particle removal is possible. Performance can be obtained.

  Subsequently, in the substrate cleaning apparatus 14, the same organic solvent supply processing as that in step S302 is performed (step S702).

  Then, the substrate cleaning apparatus 14 performs the same rinsing process as step S303 (step S703). Thereby, the removal process ends, and the process proceeds to the drying process in step S106.

  As a specific supply method of the diluted organic solvent, for example, as shown in FIG. 12A, a diluted organic solvent supply source 45i is provided, and the diluted organic solvent supply source 45i directly passes through the nozzle 41. The diluted organic solvent can be supplied to the wafer W.

  Further, for example, as shown in FIG. 12B, the diluted organic solvent mixed internally is fed from the nozzle 41 to the wafer through the DIW supply source 45a through the flow rate regulator 46a and from the organic solvent supply source 45c through the flow rate regulator 46c. You may supply to W.

  Further, for example, as shown in FIG. 12C, after DIW is supplied from the DIW supply source 45a to the wafer W, the organic solvent is supplied from the organic solvent supply source 45c to the wafer W and mixed on the wafer W, whereby diluted organic It is good also as producing | generating a solvent. In this case, DIW and the organic solvent may be simultaneously supplied to the wafer W.

  Thus, when using the film-forming processing liquid with low permeability, the stripping processing liquid can be further permeated into the processing film by using a diluted organic solvent as the stripping processing liquid. Thereby, even if it is the wafer W in which the pattern was formed, high particle removal performance can be obtained. When a dilute organic solvent is used as the stripping treatment liquid described here, specifically, the film-forming treatment liquid is based on the resin (P-3) or resin (P-5) shown in Table 1 described later as a base resin. It is preferable to apply to the above.

  In the above-described embodiment, an example in which the removal process is performed after the drying process is performed from the film forming process liquid supply process has been described (see steps S103 to S105 in FIG. 5). Before the film forming process is performed, a “film formation promoting process” for promoting solidification or curing of the film forming process liquid may be performed.

  Such other embodiments will be described with reference to FIGS. 13 to 16B. First, FIG. 13 is a flowchart showing a processing procedure of substrate cleaning processing executed by the substrate cleaning system 1 ′ according to another embodiment. FIG. 13 corresponds to FIG. 5 already shown.

  As shown in FIG. 13, in the substrate cleaning apparatus 14 of the substrate cleaning system 1 ′, first, the substrate carry-in process, the pre-process, the film-forming process liquid supply process, and the drying are the same as the above-described steps S101 to S104 in FIG. Processing is performed (steps S801 to S804).

  Subsequently, in the substrate cleaning apparatus 14, a film formation promoting process is performed (step S805). In the film formation promoting process, a process for promoting solidification or curing of the film forming treatment liquid supplied to the surface of the wafer W, for example, a process such as heating the wafer W is performed. A specific aspect of such processing will be described later with reference to FIG.

  By undergoing such film formation promotion processing, for example, the film formation processing solution that has reached the deep part of the pattern formed on the wafer W can be solidified or cured reliably, and the adhesion between the processing film and particles can be improved. . That is, even on the wafer W on which a pattern is formed, even particles in the deep part of the pattern can be reliably attached to the processing film, and high particle removal performance can be obtained.

  Then, the substrate cleaning apparatus 14 performs the removal process, the drying process, and the substrate carry-out process similar to those in steps S105 to S107 (steps S806 to S808), and the substrate cleaning process for one wafer W is completed. .

  Next, a specific aspect of the film formation promoting process will be described. First, the film formation promoting process as the first aspect will be described. FIG. 14A is an explanatory diagram of the first film formation promoting process. FIG. 14B is a schematic diagram showing the configuration of the substrate cleaning system 1 ′ when the first film formation promoting process is executed. In the following description, the substrate cleaning apparatuses 14 may be numbered in the form of “_number” to distinguish each of the plurality of substrate cleaning apparatuses 14.

  As shown in FIG. 14A, in the first film formation promoting process, for example, a baking apparatus 60 is provided, and then the wafer W is baked by the baking apparatus 60 to be supplied to the wafer W. Is heated to accelerate the solidification or curing of the film forming solution. Note that the first film formation promotion process may be performed before the drying process in step S804 described above. The conditions for baking the wafer W are preferably such that the temperature is 70 ° to 120 ° and the time is about 60 seconds or less.

  As a first aspect, when performing the first film formation promoting process, the “film formation promoting unit” including the bake device 60 is placed in a chamber 20 different from at least the chamber 20 in which the film forming process liquid supply process is performed. Provided. As a result, the baking process can be improved in performance, and the baking process and the film forming solution supply process can be performed in parallel in separate chambers.

  Specifically, as shown in FIG. 14B, for example, when the film forming process liquid supply process is performed by the substrate cleaning apparatuses 14_3 to 14_6 and the removal process is performed by the substrate cleaning apparatuses 14_9 to 14_12, The baking apparatus 60 may be accommodated in the substrate cleaning apparatuses 14_1, 14_2, 14_7, and 14_8 having another chamber 20, and the first film formation promoting process may be performed in the substrate cleaning apparatuses 14_1, 14_2, 14_7, and 14_8.

  Next, the film formation promoting process as the second aspect will be described. FIGS. 15A to 15C are explanatory views (No. 1) to (No. 3) of the second film formation promoting process. FIGS. 15D to 15F are schematic views (No. 1) to (No. 3) showing the configuration of the substrate cleaning system 1 ′ when the second film formation promoting process is executed.

  As shown in FIG. 15A, in the second film formation promoting process, for example, in the substrate holding mechanism 30, the nozzle 41_6 is provided via the support column 32, and then the holding member 311 is used from the upper surface of the rotation holding unit 31. The high temperature DIW is supplied from the nozzle 41_6 to the back surface side of the wafer W held horizontally in a separated state, thereby heating the film forming treatment liquid on the front surface side of the wafer W.

  Thereby, solidification or hardening of the film-forming treatment liquid on the surface side of the wafer W can be indirectly promoted. The nozzle 41_6 is not limited to DIW but may be a high-temperature fluid. For example, it may be high-temperature nitrogen gas or water vapor.

  Further, not only from the back surface of the wafer W but also to the film forming treatment liquid supplied to the front surface side of the wafer W, a high temperature fluid is supplied from the front surface side of the wafer W through the nozzle 41 as shown in FIG. 15B. By doing so, it is good also as heating the film-forming process liquid directly.

  15A and 15B may be performed during the supply of the film forming process liquid, that is, in parallel with the film forming process liquid supplying process.

  15A and 15B show an example in which the second film formation promoting process is performed after the film forming process liquid is supplied or during the supply, but as shown in FIG. 15C, the film forming process is performed. Before the liquid is supplied to the wafer W, the wafer W may be heated in advance by supplying a high-temperature fluid from the nozzle 41 or the nozzle 41_6 to the wafer W, and the film-forming treatment liquid may be indirectly heated.

  When performing such a second film formation promotion process, for example, the “film formation promotion unit” including the nozzle 41_6 and the nozzle 41 is placed in the same chamber 20 as the chamber 20 in which the film formation process liquid supply process and the removal process are performed. Can be provided.

  Specifically, as illustrated in FIG. 15D, for example, the substrate cleaning apparatuses 14 </ b> _ <b> 1 to 14 </ b> _ <b> 12 are configured to perform the film formation processing liquid supply process, the second film formation promotion process, and the removal process together. it can.

  Further, as shown in FIG. 15E, for example, when the film forming process liquid supply process is performed by the substrate cleaning apparatus 14_1 to 14_6, the second cleaning is performed by the substrate cleaning apparatus 14_7 to 14_12 having the chamber 20 different from this. The film forming promotion process and the removal process can be arranged.

  Further, as shown in FIG. 15F, for example, the film-forming treatment liquid supply process and the second film-forming promotion process are performed together by the substrate cleaning apparatuses 14_1 to 14_6, and the removal process is performed by the substrate cleaning apparatuses 14_7 to 14_12. Suppose that In this case, when the substrate holding mechanism 30 of the substrate cleaning apparatus 14_1 to 14_6 holds the wafer W by, for example, a suction-type vacuum chuck or the like, at least the second from the surface side of the wafer W shown in FIGS. 15B and 15C. The film formation promoting process can be performed in each of the substrate cleaning apparatuses 14_1 to 14_6.

  Next, the film formation promoting process as the third aspect will be described. FIG. 16A is an explanatory diagram of a third film formation promoting process. FIG. 16B is a schematic diagram showing the configuration of the substrate cleaning system 1 ′ when the third film formation promoting process is executed.

  As shown in FIG. 16A, in the third film formation promoting process, for example, a heat source 70 as a “film formation promoting unit” is provided at any position of the transfer units 12 and 13, and then film formation is performed on the surface. When the wafer W supplied with the processing liquid passes near the heat source 70, the film forming processing liquid is heated by the heat of the heat source 70. Thereby, solidification or hardening of the film-forming treatment liquid on the front side of the wafer W can be promoted. Note that the film-forming treatment liquid may be heated from either the front surface side or the back surface side of the wafer W.

  The heat source 70 is, for example, a halogen lamp or the like, and as shown in FIG. 16B, the film cleaning solution supply process is performed by the substrate cleaning apparatuses 14_1 to 14_6, and the removal process is performed by the substrate cleaning apparatuses 14_7 to 14_12. In this case, it can be provided in the transfer path in the transfer unit 13, the wafer holding mechanism of the substrate transfer device 131, the delivery unit 122 of the transfer unit 12, and the like. When the heat source 70 is provided in the wafer holding mechanism of the substrate transfer apparatus 131, the film forming processing liquid is heated while the wafer W supplied with the film forming processing liquid is held by the wafer holding mechanism.

  In the third film formation promotion process, not only the heat source 70 but also a UV (Ultraviolet) light source, for example, is provided instead of the heat source 70, and the film formation process is performed by irradiation with ultraviolet light from the UV light source. It is good also as accelerating solidification or hardening of a liquid.

  Further, in each of the embodiments described above, an example in which an alkali developer is used as the dissolution treatment liquid has been described. However, the dissolution treatment liquid may be a solution obtained by adding hydrogen peroxide to an alkali developer. . Thus, by adding hydrogen peroxide water to the alkaline developer, surface roughness of the wafer W surface due to the alkaline developer can be suppressed. Further, the dissolution processing solution may be an acidic developer such as acetic acid, formic acid, or hydroxyacetic acid.

  Furthermore, the dissolution treatment liquid may contain a surfactant. Since the surfactant has a function of weakening the surface tension, reattachment of the particles P to the wafer W or the like can be suppressed. Further, the unnecessary object to be removed is not limited to the particle P, and may be another substance such as a polymer remaining on the substrate after dry etching or ashing.

  Next, examples of the substrate cleaning composition will be described.

  The weight average molecular weight (Mw) and the number average molecular weight (Mn) of the obtained polymer were measured using a Tosoh GPC column (G2000HXL: 2, G3000HXL: 1, G4000HXL: 1), flow rate: 1.0 mL / Minute, elution solvent: tetrahydrofuran, sample concentration: 1.0% by mass, sample injection amount: 100 μL, column temperature: 40 ° C., detector: gel permeation chromatography using monodisperse polystyrene as a standard under differential refractometer analysis conditions (GPC). The degree of dispersion (Mw / Mn) was calculated from the measurement results of Mw and Mn.

(Polymer synthesis)
The compounds used as polymer raw materials are shown below.

(Production Example 1)
A monomer solution in which 100 g (100 mol%) of compound (M-1) and 7.29 g (7 mol%) of azobisisobutyronitrile (AIBN) were dissolved in 100 g of 2-butanone was prepared. A 1,000 mL three-necked flask charged with 100 g of 2-butanone was purged with nitrogen for 30 minutes. After purging with nitrogen, the mixture was heated to 80 ° C., and the monomer solution was added dropwise over 3 hours using a dropping funnel while stirring. The polymerization start time was defined as the start of dropping, and polymerization was performed for 6 hours. After completion of the polymerization, the reaction solution was cooled to 30 ° C. or lower. The reaction solution was concentrated under reduced pressure until the mass became 150 g. 150 g of methanol and 750 g of n-hexane were added and separated. After separation, the lower layer solution was recovered. 750 g of n-hexane was added to the recovered lower layer solution, and separation and purification were performed again. After separation, the lower layer solution was recovered. The solvent was removed from the recovered lower layer solution, and 4-methyl-2-pentanol was added to obtain a solution containing the resin (P-1). The results are shown in Table 1.

(Production Examples 2 to 10)
Resins (P-2) to (P-11) were synthesized in the same manner as in Production Example 1 except that the compounds and combinations used were changed as shown in Table 1.

Example 1
100 parts by mass of the polymer (P-1) and 7,400 parts by mass of 4-methyl-2-pentanol were mixed to obtain a uniform solution. This solution was filtered using a filter made of HDPE (pore diameter 5 nm, PhotoKleen EZD manufactured by Pall Japan). It was confirmed with an in-liquid particle counter (manufactured by Rion Co., Ltd., KS-41B) that particles of 150 μm or less in the liquid were reduced to 10 particles / mL, and a substrate cleaning composition (D-1) was prepared. The solid concentration was about 1.5%.

(Examples 2 to 8 and Comparative Examples 1 and 2)
Substrate cleaning compositions (D-2) to (D-8) and comparative compositions (c-1) and (c-2) were obtained in the same manner as in Example 1 except that the resin was changed as shown in Table 2. Prepared.

Example 9
100 parts by mass of the polymer (P-1), 5.0 parts by mass of tartaric acid (Ac-1) as an organic acid, and 7,400 parts by mass of 4-methyl-2-pentanol were mixed to obtain a uniform solution. This solution was filtered using a filter made of HDPE (pore diameter 5 nm, PhotoKleen EZD manufactured by Pall Japan). It was confirmed with an in-liquid particle counter (manufactured by Rion Co., Ltd., KS-41B) that particles of 150 μm or less in the liquid were reduced to 10 particles / mL, and a substrate cleaning composition (D-1) was prepared. The solid concentration was about 1.5%.

(Examples 10 to 16 and Comparative Examples 3 to 5)
Substrate cleaning compositions (D-10) to (D-16) and comparative compositions (c-3) to (c-) were the same as in Example 9 except that the resin and organic acid were changed as shown in Table 2. 5) was prepared.

The organic acids used in each example and comparative example are as follows. In this example, the organic acid used was a reagent manufactured by Wako Pure Chemical.
Ac-1: Tartaric acid Ac-2: Oxalic acid Ac-3: Citric acid Ac-4: Maleic acid Ac-5: Malic acid Ac-6: Fumaric acid Ac-7: Isophthalic acid Ac-8: Terephthalic acid Ac-9 : Polyacrylic acid (polyacrylic acid 5000 manufactured by Wako Pure Chemical Industries)

(Evaluation of particle removability and film removability)
A treated film of each composition was formed on a 12-inch wafer to which silica particles having a particle diameter of 200 nm were previously attached using the above-described substrate cleaning apparatus 14 by spin coating. About what formed the process film | membrane, 2.38 mass% tetramethylammonium hydroxide aqueous solution (TMAH solution) was supplied as a melt | dissolution process liquid, and the process film | membrane was removed. With regard to removability, removal of all treated films is completed within 20 seconds from the start of TMAH solution supply, removal of B within 20 minutes is completed within 1 minute, and removal is completed within 1 minute. What was not done was determined to be C. In addition, the number of silica particles remaining on the wafer after removal of the treated film was analyzed using a dark field defect apparatus (SP2, manufactured by KLA-TENCOR). A silica particle removal rate of 70% or more was judged as A, 30% or more and less than 70% as B, and less than 30% as C. In the case where the treated film could not be formed, “not coated” was described in the column of particle removability.

(Evaluation Examples 1 to 16 and Comparative Evaluation Examples 1 to 5)
Using a silicon wafer as the wafer, the substrate cleaning compositions (D-1) to (D-16) and the comparative compositions (c-1) to (c-5), respectively, are removed according to the evaluation method described above. And film removability were evaluated. The results are shown in Table 3.

(Evaluation Examples 17 to 24 and Comparative Evaluation Examples 6 and 7)
Particle removability and film removability were evaluated in the same manner as described above except that the silicon wafer was changed to silicon nitride or titanium nitride and the combination with the substrate cleaning composition was changed as shown in Table 4. The results are shown in Table 4.

  From the comparison between each evaluation example and each comparative evaluation example, the composition for cleaning a substrate according to the present invention has both a particle removability and a film removability in a substrate cleaning method in which a film is formed on the substrate surface and removed. It turns out that it is excellent. Moreover, it turns out that film | membrane removal property improves further by adding an organic acid from the comparison with Evaluation Examples 5-8 and Evaluation Examples 13-16.

(Evaluation Examples 25-31 and Comparative Evaluation Example 8)
In the evaluation examples 4, 5, 12 to 16 and the comparative evaluation example 3, the particle removal property and the film removal property were evaluated in the same manner except that pure water was supplied as a peeling treatment solution instead of the dissolution treatment solution. The results are shown in Table 5.

(Evaluation Examples 32-36 and Comparative Evaluation Example 9)
In the evaluation examples 20 to 24 and the comparative evaluation example 6, the particle removability and the film removability were evaluated in the same manner except that pure water as a peeling treatment liquid was supplied instead of the dissolution treatment liquid. The results are shown in Table 6.

  Further effects and modifications can be easily derived by those skilled in the art. Thus, the broader aspects of the present invention are not limited to the specific details and representative embodiments shown and described above. Accordingly, various modifications can be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.

W Wafer P Particles 1, 1 ′ Substrate cleaning system 2 Loading / unloading station 3 Processing station 4 Controller 14 Substrate cleaning device 20 Chamber 21 FFU
30 Substrate holding mechanism 40_1, 40_2 Liquid supply part 45a DIW supply source 45b Alkaline aqueous solution supply source 45c Organic solvent supply source 45d DIW supply source 45e IPA supply source 45f Pretreatment liquid supply source 45g A + B supply source 45h C supply source 45i Diluted organic solvent Supply source 46a-46c, 46g, 46h Flow regulator 60 Bake device 70 Heat source

The disclosed embodiments relate to a substrate cleaning system , a substrate cleaning method, and a storage medium .

An object of one embodiment is to provide a substrate cleaning system , a substrate cleaning method, and a storage medium that can obtain high particle removal performance.

（式（１）中、Ｒ^１、Ｒ^２はそれぞれ独立して水素原子、フッ素原子、炭素数１〜８のアルキル基又はフッ素化アルキル基を表す。ただし、Ｒ^１又はＲ^２の少なくともいずれか１つはフッ素原子または炭素数１〜８のフッ素化アルキル基である。＊は重合体を構成する他原子との結合部位を表す。） The substrate cleaning system according to one aspect of the embodiment includes a holding unit and a removal liquid supply unit. Holding unit holds the solvent, the substrate on which the treatment film is formed containing a polymer soluble in a solvent containing a fluorine atom. The removal liquid supply unit supplies a removal liquid for removing the treatment film to the treatment film on the substrate. Moreover, a polymer has a partial structure represented by following formula (1), and a removal liquid supply part is provided with a peeling process liquid supply part . The peeling treatment liquid supply unit supplies a peeling treatment liquid for peeling the treatment film from the substrate to the treatment film .

(In Formula (1), R ¹ and R ² each independently represent a hydrogen atom, a fluorine atom, an alkyl group having 1 to 8 carbon atoms, or a fluorinated alkyl group, provided that at least one of R ^{1 and} R ² One is a fluorine atom or a fluorinated alkyl group having 1 to 8 carbon atoms. * Represents a bonding site with another atom constituting the polymer.)

Hereinafter, embodiments of a substrate cleaning system , a substrate cleaning method, and a storage medium disclosed in the present application will be described in detail with reference to the accompanying drawings. In addition, this invention is not limited by embodiment shown below.

Claims (1)

A holding unit for holding a substrate on which a treatment film containing an organic solvent and a polymer containing a fluorine atom and soluble in the organic solvent is formed;
A removal liquid supply unit that supplies a removal liquid for removing the treatment film to the treatment film on the substrate;
The polymer has a partial structure represented by the following formula (1),
The removal liquid supply unit includes:
A stripping treatment liquid supply unit that feeds a stripping treatment liquid for stripping the treatment film from the substrate to the treatment film;
A substrate cleaning system, comprising: a dissolution processing liquid supply unit that supplies a dissolution processing liquid for dissolving the processing film to the processing film.

(In Formula (1), R ¹ and R ² each independently represent a hydrogen atom, a fluorine atom, an alkyl group having 1 to 8 carbon atoms, or a fluorinated alkyl group, provided that at least one of R ^{1 and} R ² One is a fluorine atom or a fluorinated alkyl group having 1 to 8 carbon atoms. * Represents a bonding site with another atom constituting the polymer.)

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