JP2018170481A - Method for connecting electronic component and conductor and method for manufacturing semiconductor module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for connecting an electronic component and a conductor which can connect an electrode of an electronic component and a conductor with high reliability even if it is stored or used for a long time under a high temperature and high humidity environment.SOLUTION: The method of connecting an electronic component and a conductor includes: disposing silver coated rubber particles having rubber particles and a silver coating layer formed on surfaces of the rubber particles between an electrode of the electronic component and the conductor; pressurizing the electrode of the electronic component and the conductor to electrically connect the electrode of the electronic component and the conductor through the silver coated rubber particles; and fixing the electrode of the electronic component and the conductor in a state where the electrode of the electronic component and the conductor are conducted through the silver-coated rubber particles.SELECTED DRAWING: Figure 4

Description

  The present invention relates to a method for connecting an electronic component and a conductor and a method for manufacturing a semiconductor module.

  In a semiconductor module, as a method of electrically connecting an electrode of an electronic component such as a semiconductor element and a conductor such as a bus bar, a rubber particle and the surface of the rubber particle are placed between the electrode of the electronic component and the conductor. A method of interposing metal-coated rubber particles having a coated metal coating layer has been studied. Non-Patent Document 1 discloses metal-coated rubber particles obtained by coating a highly heat-resistant rubber with polyimide film / copper / gold in this order.

Akisawa Ashizawa, “Low Contact Pressure Mounting Method Using Metal-coated Rubber Balls”, Surface Technology Association, Future Plating Technology Examination Subcommittee 27th Regular Meeting Proceedings, Japan Surface Technology Association, Future Plating Technology Examination Subcommittee, 2017 January 16, p. 37-47

  By the way, with the increase in density and miniaturization of semiconductor modules, the amount of heat generated per unit volume of the semiconductor modules is increasing. For this reason, in a semiconductor module, it is important to connect so that the electrical resistance between the electrode of the semiconductor element and the bus bar does not increase even when stored or used for a long time in a high temperature and high humidity environment. . However, a semiconductor module in which a semiconductor element and a bus bar are connected using a gold / copper-coated rubber particle obtained by laminating copper and gold in this order as a metal coating layer as shown in Non-Patent Document 1 has a high temperature. When stored or used for a long time in a high humidity environment, the electrical resistance between the electrode of the semiconductor element and the bus bar may increase, and the reliability of the electrical connection between the electrode and the bus bar becomes insufficient. There was a case.

  An object of the present invention has been made in view of the circumstances described above, and is an electronic component that can connect an electrode of an electronic component and a conductor with high reliability even when stored or used for a long time in a high-temperature and high-humidity environment. And providing a method of connecting the conductor. Another object of the present invention is to provide a method of manufacturing a semiconductor module that can connect the electrode of a semiconductor element and a bus bar with high reliability even when stored or used for a long time in a high temperature and high humidity environment.

In order to solve the above problems, the inventors of the present invention have intensively studied. As a result, rubber particles and a silver coating layer formed on the surface of the rubber particles are provided between the electrode of the electronic component and the conductor. Arranging the silver-coated rubber particles having a step, pressurizing the electrodes and conductors of the electronic component, and electrically connecting the electrodes and conductors of the electronic components through the silver-coated rubber particles; and silver-coated rubber particles When the electrode of the electronic component and the conductor are connected using the method including the step of fixing the electrode of the electronic component and the conductor in a state where the electrode of the electronic component and the conductor are electrically connected to each other, The inventors have found that the reliability of the electrical connection between the electrode of the electronic component and the conductor when stored or used for a long time under a high humidity environment is improved, and the present invention has been completed.
When the above method is used, the reason why the reliability of the electrical connection between the electrode of the electronic component and the conductor when stored or used for a long time in a high temperature and high humidity environment is considered as follows. It is done.
When the coated metal layer of the metal-coated rubber particles contains a relatively base metal such as copper, oxidation occurs inside the coated metal layer and corrosion occurs between the coated metal layers in a high-temperature or high-humidity environment. It's easy to do. For this reason, the conductivity and elasticity of the metal-coated rubber particles are deteriorated, and the reliability of electrical connection tends to be impaired. In contrast, silver-coated rubber particles having a silver coating layer are unlikely to oxidize or corrode the silver coating layer. For this reason, the reliability of electrical connection is improved.

  Therefore, the method for connecting an electronic component and a conductor according to the present invention is a method for connecting an electronic component and a conductor that electrically connect an electronic component having an electrode and a conductor, wherein the electrode of the electronic component and the conductor are connected to each other. A step of disposing silver-coated rubber particles having rubber particles and a silver coating layer formed on the surface of the rubber particles between the conductor, and pressurizing the electrode and the conductor of the electronic component; A step of electrically connecting the electrode of the electronic component and the conductor via the silver-coated rubber particles, and a state of electrically connecting the electrode of the electronic component and the conductor via the silver-coated rubber particles. And fixing the electrode and the conductor of the electronic component.

  The semiconductor module manufacturing method of the present invention is a semiconductor module manufacturing method including a semiconductor element having an electrode and a bus bar connected to the electrode of the semiconductor element, wherein the electrode of the semiconductor element A step of placing silver-coated rubber particles having rubber particles and a silver coating layer formed on the surface of the rubber particles between the bus bars, and pressurizing the electrodes and the bus bars of the semiconductor element, Conducting the electrode and the bus bar of the semiconductor element through the silver-coated rubber particles, and conducting the electrode and the bus bar of the semiconductor element through the silver-coated rubber particles, A step of fixing the electrode of the semiconductor element and the bus bar.

  According to the present invention, it is possible to provide a method for connecting an electronic component and a conductor that can connect the electrode and the conductor of the electronic component with high reliability even when stored or used for a long time in a high temperature and high humidity environment. Become. It is also possible to provide a method for manufacturing a semiconductor module that can connect the electrode of the semiconductor element and the bus bar with high reliability even when stored or used for a long time in a high temperature and high humidity environment.

It is a semiconductor module sectional view concerning one embodiment of the present invention. FIG. 2 is a plan view of the semiconductor module shown in FIG. 1. It is an enlarged view of the junction part of the semiconductor element and bus bar in the semiconductor module shown in FIG. It is explanatory drawing explaining the manufacturing method of the semiconductor module which concerns on one Embodiment of this invention.

Embodiments of the present invention will be described below with reference to the accompanying drawings.
The method for connecting an electronic component and a conductor according to this embodiment can be used, for example, when manufacturing a semiconductor module in which a semiconductor element such as an IGBT element and a conductive material such as a bus bar are electrically connected.

FIG. 1 is a cross-sectional view of a semiconductor module according to an embodiment of the present invention. FIG. 2 is a plan view of the semiconductor module shown in FIG. FIG. 3 is an enlarged view of a junction between a semiconductor element and a bus bar in the semiconductor module shown in FIG.
In FIG. 1, the semiconductor module 10 includes a semiconductor device 11, a bus bar 30 electrically connected to the semiconductor device 11, and a resin 60 that covers the semiconductor module 10 and the bus bar 30. The semiconductor device 11 is connected to the module substrate 20, the semiconductor element 25 mounted on one surface (the upper surface in FIG. 1) of the module substrate 20, and the other surface (the lower surface in FIG. 1) of the module substrate 20. Heat sink 50.

  The module substrate 20 is disposed on the ceramic substrate 21, the circuit layer 22 disposed on one surface of the ceramic substrate 21 (upper surface in FIG. 1), and the other surface (lower surface in FIG. 1) of the ceramic substrate 21. And a metal layer 23.

The ceramic substrate 21 is made of a highly insulating ceramic. Examples of ceramics constituting the ceramic substrate 21 include AlN (aluminum nitride), Si ₃ N ₄ (silicon nitride), and Al ₂ O ₃ (alumina).

  The circuit layer 22 is made of a metal having high conductivity. Examples of the metal constituting the circuit layer 22 include copper, a copper alloy, aluminum, and an aluminum alloy.

  The metal layer 23 is made of a metal having high thermal conductivity. Examples of the metal constituting the metal layer 23 include copper, a copper alloy, aluminum, and an aluminum alloy.

  The semiconductor element 25 is mounted on the circuit layer 22 via a bonding material 24. As the bonding material, for example, metal particles having a low melting point and high conductivity such as silver fine particles can be used.

  The bus bar 30 includes an input terminal 31, an output terminal 32, and a signal terminal 33. The input terminal 31 and the output terminal 32 are electrically connected to the semiconductor element 25. The signal terminal 33 is electrically connected to the circuit layer 22 of the module substrate 20. The bus bar 30 is made of a metal material. Examples of the metal constituting the bus bar 30 include copper and a copper alloy.

  The bus bar 30 is electrically connected to the semiconductor element 25 or the module substrate 20 via the silver-coated rubber particles 40. As shown in FIG. 3, the silver-coated rubber particles 40 have rubber particles 41 and a silver coating layer 42 formed on the surface of the rubber particles 41. In FIG. 3, the silver-coated rubber particles 40 have a shape compressed between the input terminal 31 and the semiconductor element 25. Since the silver-coated rubber particles 40 have a compressed shape, the contact area between the silver coating layer 42, the input terminal 31, and the semiconductor element 25 is increased, and the conductivity is improved.

  As the rubber particles 41 of the silver-coated rubber particles 40, silicone rubber particles, urethane rubber particles, and acrylic rubber particles can be used. The rubber particles 41 are preferably spherical so as to have a compressed and compressed shape. However, the rubber particles 41 need not be true spheres. The rubber particles 41 are preferably 20 μm or more and 250 μm or less. When the average particle diameter is in the above range, a compressed shape tends to be obtained. The silver content of the silver-coated rubber particles 40 is preferably 15% by mass or more and 40% by mass or less with respect to the total amount. When silver content exists in said range, while the electroconductivity of the silver covering rubber particle 40 will improve, the rubber elasticity of the silver covering rubber particle 40 will not be impaired.

  The silver-coated rubber particles 40 can be produced, for example, by depositing silver on the surfaces of the rubber particles 41 by an electroless plating method.

  The heat sink 50 is for radiating the heat generated in the semiconductor element 25 to the outside. The heat sink 50 is provided with a flow path 51 through which a cooling medium flows. The heat sink 50 is made of a metal having high thermal conductivity. Examples of the metal constituting the heat sink 50 include copper, a copper alloy, aluminum, and an aluminum alloy.

  Next, the manufacturing method of the semiconductor module which is this embodiment is demonstrated with reference to FIG.

(Semiconductor device manufacturing process)
In the manufacturing process of the semiconductor device, first, a module substrate 20, a bonding material 24, a semiconductor element 25, and a heat sink 50 are prepared.
A semiconductor element 25 is bonded to the circuit layer 22 of the module substrate 20 via a bonding material 24. Next, the heat sink 50 is bonded to the metal layer 23 of the module substrate 20. The metal layer 23 of the module substrate 20 and the heat sink 50 can be joined by brazing, for example. As described above, the semiconductor device 11 shown in FIG.

(Process for forming silver-coated rubber particle layer)
In the step of forming the silver-coated rubber particle layer, first, a coating paste in which the silver-coated rubber particles 40 are dispersed in the solvent 43 is prepared. The solvent 43 is not particularly limited as long as it imparts excellent coating properties to the paste and can be dried in the range of room temperature to 150 ° C. Specifically, a solvent having a viscosity of more than 10 mPa · s at 20 ° C., such as ethylene glycol and glycerin, can be suitably used.

As shown in FIG. 4B, a silver-coated rubber particle layer 44 is formed by applying a coating paste to a portion where the electrode of the semiconductor element 25 of the semiconductor device 11 and the bus bar 30 of the circuit layer 22 are joined. A dispenser can be used to apply the coating paste.
Thus, the silver-coated rubber particle layer 44 is disposed at a predetermined position of the semiconductor device 11.

  As a process of forming the silver-coated rubber particle layer 44, the silver-coated rubber particles 40 may be directly disposed on the circuit layer 22 by using a device such as a ball mounter without using a method of applying a coating paste.

(Semiconductor device and bus bar connection process)
In the step of connecting the semiconductor device 11 and the bus bar 30, first, the bus bar 30 is disposed on the silver-coated rubber particle layer 44. Thus, the silver-coated rubber particles 40 are disposed between the electrodes of the semiconductor element 25 of the semiconductor device 11 and the input terminals 31 and the output terminals 32 and between the circuit layer 22 and the signal terminals 33.

  Next, as shown in FIG. 4C, the jig 70 is used to pressurize the electrodes of the semiconductor elements 25 of the semiconductor device 11, the input terminals 31, the output terminals 32, the circuit layer 22, and the signal terminals 33, while The solvent of the covering rubber particle layer 44 is volatilized and removed, and the electrode of the semiconductor element 25 and the input terminal 31, the output terminal 32, the circuit layer 22 and the signal terminal 33 are made conductive through the silver covering rubber particle 40.

Then, the semiconductor device 11 and the bus bar 30 are fixed in a state where the electrode of the semiconductor element 25 and the input terminal 31, the output terminal 32, the circuit layer 22, and the signal terminal 33 are electrically connected via the silver-coated rubber particles 40. As a fixing method, for example, a method of pouring a resin around the semiconductor device 11 and the bus bar 30 and then curing the resin can be used. As the resin, for example, a resin used as a mold resin (sealing material) of a semiconductor module such as an epoxy resin can be used. As another method of fixing the semiconductor device 11 and the bus bar 30, a method of fixing the movable part of the jig 70 pressing the semiconductor device 11 and the bus bar 30 by resin filling or fusion can be used. Further, instead of using the jig 70, the semiconductor device 11 and the bus bar 30 are housed in a resin or metal housing, and the electrode of the semiconductor element 25 is interposed through the silver-coated rubber particles 40 inside the housing. And the input terminal 31, the output terminal 32, the circuit layer 22 and the signal terminal 33 are pressed against the semiconductor device 11 and the bus bar 30 through the lid, and the casing and the lid are maintained while maintaining the state. A method of sealing by fusing or bonding can be used.
Thus, by fixing the electrode of the semiconductor element 25 and the input terminal 31, the output terminal 32, the circuit layer 22, and the signal terminal 33, a semiconductor module in which the semiconductor device and the bus bar are electrically joined can be obtained.

  According to the manufacturing method of the semiconductor module 10 according to the present embodiment configured as described above, the electrode of the semiconductor element 25, the input terminal 31, the output terminal 32, the circuit layer 22, and the signal terminal 33 are silver-coated rubber. Since the particles are made conductive, the joined body in which the reliability of electrical connection between the electrode of the semiconductor element 25 and the input terminal 31, the output terminal 32, and the circuit layer 22 and the signal terminal 33 is improved is a semiconductor module. 10 can be obtained.

  As mentioned above, although embodiment of this invention was described, this invention is not limited to this, It can change suitably in the range which does not deviate from the technical idea of the invention.

  For example, in the present embodiment, the case where the circuit layer 22 and the signal terminal 33 are electrically connected has been described, but the circuit layer 22 may be connected to a printed wiring board. In the present embodiment, the case where the silver-coated rubber particle layer 44 is formed at the portion where the electrode of the semiconductor element 25 of the semiconductor device 11 and the bus bar 30 of the circuit layer 22 are joined has been described. You may form in the bus-bar 30.

  Furthermore, the connection method between the electronic component and the conductor according to the present embodiment can be used to connect an electronic component other than the semiconductor element 25 and a conductor other than the input terminal 31 and the output terminal 32. For example, as an example of the electronic component other than the semiconductor element 25, an LED element can be given. Examples of the conductor other than the input terminal 31 and the output terminal 32 include a lead wire, a printed wiring board, and a module board.

[Invention Example 1]
<Preparation of silver-coated rubber particles>
A 1 L volumetric flask was charged with 15 g of stannous chloride and 15 ml of 35% hydrochloric acid and diluted to 1.0 L with water (measup) to prepare a stannous chloride aqueous solution. Moreover, the silicone rubber particle (average particle diameter: 30 micrometers) by which the surface was coat | covered with the silicone resin layer (thickness: 50 nm) was prepared.
While maintaining the above stannous chloride aqueous solution at 25 ° C., 20 g of the above silicone rubber particles were added to this aqueous solution and stirred for 1 hour. After the stirring, the silicone rubber particles were separated by filtration and washed with water. Thereby, silicone rubber particles having a tin adsorption layer on the surface were obtained.

  In 2.0 L of water, 130.0 g of tetrasodium ethylenediaminetetraacetate (complexing agent), 32.0 g of sodium hydroxide and 60 ml of formalin (reducing agent) were dissolved to prepare an aqueous solution containing the complexing agent and the reducing agent. Further, 21.5 g of silver nitrate, 23 mL of 25% aqueous ammonia, and 130 mL of water were mixed to prepare an aqueous silver nitrate solution.

  Next, silicone rubber particles having a tin adsorption layer on the surface were put into an aqueous solution containing the complexing agent and the reducing agent to prepare a silicone rubber particle slurry. Then, while stirring the silicone rubber particle slurry, the silver nitrate aqueous solution is dropped into the slurry, and the surface of the silicone rubber particles is 40 parts by mass of silver in 100 parts by mass of the silver-coated silicone rubber particles to be generated. It was covered with silver so that Thereafter, the slurry was washed with water and dried to obtain silver-coated silicone rubber particles.

<Fabrication of semiconductor module>
(Fabrication of semiconductor devices)
As the module substrate 20, a ceramic substrate 21 is composed of an AlN plate (27 mm × 17 mm, thickness 0.6 mm), a circuit layer 22 is composed of pure aluminum (25 mm × 15 mm, thickness 0.3 mm), and a metal layer 23 was made of pure aluminum (25 mm × 15 mm, thickness 0.6 mm). An IGBT element (13 mm × 10 mm, thickness 0.25 mm) was prepared as the semiconductor element 25, and silver nanoparticles were prepared as the bonding material 24. As the heat sink 50, an aluminum plate (A6063: 40.0 mm × 40.0 mm, thickness 2.5 mm) was prepared.
A semiconductor element 25 was bonded to the circuit layer 22 of the module substrate 20 using a bonding material 24. Further, the heat sink 50 was bonded to the metal layer 23 of the module substrate 20 using a brazing material. Thus, the semiconductor device 11 shown in FIG.

(Preparation of coating paste)
The produced silver-coated silicone rubber particles (10 parts by mass) and ethylene glycol (4 parts by mass) were mixed using an auto-revolution mixer to prepare a coating paste.

(Formation of silver-coated rubber particle layer)
The above paste for application was filled in a syringe. Next, as shown in FIG. 4B, the above-mentioned coating paste is applied to the portion where the electrode of the semiconductor element 25 and the bus bar 30 of the circuit layer 22 are joined by using a dispenser, and the silver-coated rubber particle layer 44. Formed.

(Connection between semiconductor device and bus bar)
On the electrode of the semiconductor element 25 and the silver-coated rubber particle layer 44 formed on the circuit layer 22, the input terminal 31, the output terminal 32, the circuit layer 22 and the signal terminal 33 are arranged, respectively. Next, as illustrated in FIG. 4C, the electrode of the semiconductor element 25 of the semiconductor device 11, the input terminal 31, the output terminal 32, the circuit layer 22, and the signal terminal 33 are set to 50 kPa using a carbon jig 70. The ethylene glycol in the silver-coated rubber particle layer 44 is volatilized and removed while pressurizing at a pressure of, and the electrodes of the semiconductor element 25, the input terminal 31, the output terminal 32, the circuit layer 22, and the signal terminal through the silver-coated rubber particles 40. 33 was made conductive. Then, while maintaining this conductive state, the periphery of the electrode of the semiconductor element 25 and the input terminal 31, the output terminal 32, the circuit layer 22 and the signal terminal 33 was filled with a mold resin, and then the jig 70 was removed, The semiconductor module 10 shown in FIG. 1 was obtained.

[Invention Example 2]
<Preparation of silver-coated rubber particles>
Instead of silicone rubber particles, urethane rubber particles (average particle size: 20 μm) were used, and the amount of drug was adjusted so that the silver content in 100 parts by mass of the resulting silver-coated urethane rubber particles was 20 parts by mass. Except for the change, the same operation as in Invention Example 1 was performed to produce silver-coated urethane rubber particles.

<Fabrication of semiconductor module>
The silver-coated urethane rubber particles are used in place of the silver-coated silicone rubber particles, and the silver-coated urethane rubber particles are arranged by a ball mounter using a metal mask instead of using a coating paste, and silver A semiconductor module was produced in the same manner as in Example 1 except that the coated rubber particle layer was formed.

[Invention Example 3]
<Preparation of silver-coated rubber particles>
Instead of silicone rubber particles, acrylic rubber particles (average particle size: 250 μm) were used, and the amount of drug was adjusted so that the silver content in 100 parts by mass of the silver-coated acrylic rubber particles to be produced was 15 parts by mass. Except for the change, silver-coated acrylic rubber particles were produced in the same manner as in Invention Example 1.

<Fabrication of semiconductor module>
A semiconductor module was produced in the same manner as in Example 2 except that the above silver-coated acrylic rubber particles were used in place of the silver-coated silicone rubber particles.

[Invention Example 4]
<Preparation of silver-coated rubber powder>
Use silicone rubber particles with an average particle size of 100 μm instead of silicone rubber particles (average particle size: 30 μm), and surface-clean 20 g of silicone rubber particles with an alkaline cleaning solution before putting them into an aqueous stannous chloride solution. Then, after drying, silver-coated silicone rubber particles were produced in the same manner as Example 1 except that the surface was modified by irradiating with atmospheric plasma.

<Fabrication of semiconductor module>
A semiconductor module was produced in the same manner as Example 1 except that the above silver-coated silicone rubber particles were used as the silver-coated silicone rubber particles.

[Comparative Example 1]
<Preparation of gold / copper coated rubber particles>
20 g of silicone rubber particles (average particle size: 100 μm) were subjected to surface cleaning with an alkali cleaning solution, then dried, and then subjected to surface modification by irradiation with atmospheric plasma. Surface-modified silicone rubber particles were dispersed in 3 L of water to prepare a silicone rubber particle slurry. While stirring the prepared silicone rubber particle slurry, 0.3 g of palladium chloride, 20 g of stannous chloride and 200 g of hydrochloric acid (concentration 35 mass%) were added to this slurry, and the mixture was kept at 30 ° C. for 15 minutes in a water bath. The slurry was washed with water and filtered to form a cake. Water was added to the cake so that the volume of the slurry was 1.5 L, and a slurry of silicone rubber particles having a tin palladium adsorption layer on the surface was prepared.

  Further, 80 g of copper sulfate pentahydrate as a copper salt, 170 g of sodium ethylenediaminetetraacetate as a complexing agent, and 15 mg of sodium cyanide as a stabilizing agent were stirred and dissolved in 600 g of ion-exchanged water to prepare a copper plating solution.

  Next, after adding 100 mL of formaldehyde (concentration: 37% by mass) as a reducing agent and 20 mg of polyethylene glycol as a surfactant to the slurry of silicone rubber particles having the tin palladium adsorption layer, the mixture was stirred in a water bath for 50 hours. Heated at ° C. To the heated slurry, the above copper plating solution was dropped and stirred for a certain period of time, and the copper rubber was applied to the silicone rubber particles provided with the tin-palladium adsorption layer to produce copper-coated rubber particles. Next, the slurry in which the copper-coated rubber particles were generated was washed with water. Thus, a slurry of copper-coated rubber particles was prepared.

  Moreover, 1.1 g of potassium gold cyanide, 2.5 g of potassium cyanide, and 2.3 g of potassium hydroxide were dissolved and mixed in 100 mL of water to prepare a gold plating solution.

  To the copper-coated rubber particle slurry after washing with water, 1.2 g of water and potassium tetrahydroborate were added to make a 1 L slurry. The slurry was heated to 80 ° C. while stirring, the above gold plating solution was added, and gold plating was performed on the outermost surface to obtain gold / copper-coated silicone rubber particles. The obtained gold / copper-coated silicone particles were 3 parts by mass of gold and 15 parts by mass of copper, out of 100 parts by mass of the particles.

<Fabrication of semiconductor module>
A semiconductor module was produced in the same manner as in Example 1 except that the above gold / copper-coated silicone rubber particles were used in place of the silver-coated silicone rubber particles.

<Evaluation>
The semiconductor modules produced in Invention Examples 1 to 4 and Comparative Example 1 were left in a constant temperature and humidity chamber at a temperature of 85 ° C. and a humidity of 85% RH for 1000 hours, and a wet heat environment test was performed. The resistance value between the source and the gate was measured for the semiconductor element of the structure before and after the wet heat environment test. At this time, the resistance value after the wet heat environment test when the resistance value before the wet heat environment test is 100 is shown in Table 1.

As can be seen from Table 1, in the semiconductor module of Comparative Example 1 using gold / copper-coated rubber particles, the electrical resistance after the wet heat environment test increased by 10 times or more. About the semiconductor module after this wet heat environment test, when the joint part between the electrode of the semiconductor element and the bus bar is taken out and observed with a microscope, it is confirmed that the copper layer of the gold / copper-coated rubber particles is oxidized and corroded. It was done. Therefore, it is considered that the electrical resistance after the wet heat environment test was significantly increased in the semiconductor module of Comparative Example 1 due to oxidation and corrosion of the copper layer of the gold / copper-coated rubber particles.
In contrast, in Examples 1 to 4 of the present invention using silver-coated rubber particles, the electrical resistance after the wet heat environment test is almost the same as the electrical resistance before the wet heat environment test, and resistance deterioration due to the wet heat environment test is observed. Thus, it was confirmed that good conductivity can be maintained, and the reliability of electrical connection between the electrode of the semiconductor element and the bus bar is improved.

  The method for connecting an electronic component and a conductor according to the present invention can be used for connecting a semiconductor device such as an LED element or an element of a power module and a substrate.

DESCRIPTION OF SYMBOLS 10 Semiconductor module 11 Semiconductor device 20 Module substrate 21 Ceramic substrate 22 Circuit layer 23 Metal layer 30 Bus bar 31 Input terminal 32 Output terminal 33 Signal terminal 40 Silver coating rubber particle 41 Rubber particle 42 Silver coating layer 43 Solvent 44 Silver coating rubber particle layer 50 heat sink 51 flow path 60 resin 70 jig

Claims (2)

A method for connecting an electronic component and a conductor to electrically connect an electronic component having an electrode and a conductor,
Disposing silver-coated rubber particles having rubber particles and a silver coating layer formed on the surface of the rubber particles between the electrode of the electronic component and the conductor;
Pressurizing the electrode and the conductor of the electronic component to electrically connect the electrode of the electronic component and the conductor through the silver-coated rubber particles;
Fixing the electrode and the conductor of the electronic component in a state in which the electrode and the conductor of the electronic component are conducted through the silver-coated rubber particles;
A method for connecting an electronic component and a conductor. A semiconductor module manufacturing method comprising a semiconductor element having an electrode and a bus bar connected to the electrode of the semiconductor element,
Disposing silver-coated rubber particles having rubber particles and a silver coating layer formed on the surface of the rubber particles between the electrode of the semiconductor element and the bus bar;
Pressurizing the electrode of the semiconductor element and the bus bar and electrically connecting the electrode of the semiconductor element and the bus bar through the silver-coated rubber particles;
Fixing the electrode of the semiconductor element and the bus bar in a state in which the electrode of the semiconductor element and the bus bar are conducted through the silver-coated rubber particles;
A method for manufacturing a semiconductor module, comprising:

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