JP2018158394A - Fine element and manufacturing method of the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To inhibit deformation and warpage of a fine beam structure without limiting a material.SOLUTION: A fine element includes: a substrate 101; a first support part 102 formed on the substrate 101; and a beam part 103 fixed to the first support part 102. The beam part 103 comprises a fixing part 103a and an extension part 103b. The fixing part 103a of the beam part 103 is connected and fixed to the first support part 102. The extension part 103b of the beam part 103 is disposed on the substrate 101 so as to be spaced away therefrom. Further, the fine element includes a pressing part 105 which is fixed onto the second support part 104 and presses an upper surface of the beam part 103 located on the first support part 102.SELECTED DRAWING: Figure 1A

Description

  The present invention relates to a microelement manufactured by MEMS technology and a manufacturing method thereof.

  In recent years, various devices manufactured using MEMS (Micro Electro Mechanical Systems) technology have been researched and mounted on portable devices and various electric devices. Such a MEMS device has a movable structure arranged in a hollow space. For example, in Patent Document 1, as shown in FIG. 5, a plurality of metal pattern layers are provided on a substrate 301 via an insulating layer 302, and the fixed electrode 303 and the movable electrode 304 are formed of different metal pattern layers. An acceleration sensor element is described. The fixed electrode 303 is supported by a spring portion 305 having a beam structure formed of the same metal pattern layer.

  In this element, the metal pattern layer constituting the fixed electrode 303 and the metal pattern layer constituting the movable electrode 304 are separated from each other, and the separation distance between them is controlled.

  When acceleration is applied to the acceleration sensor element, the movable electrode 304 is displaced, and the capacitance value between the movable electrode 304 and the fixed electrode 303 changes. It is possible to measure the applied acceleration value from the change in the capacitance value. The movable electrode 304 can be displaced within the range of the position where the stopper 307 is formed.

  In the technique shown in Patent Document 1, the movable electrode 304 is supported by a spring portion 305 to form a hollow structure. One end of the spring portion 305 is fixed on the substrate 301 by being connected to a support portion 306 formed on the substrate 301. Such a fine structure is often found not only in the acceleration sensor element but also in a general MEMS device.

  Patent Document 2 discloses a capacitive acceleration sensor shown in FIG. In this capacitive acceleration sensor, a silicon plate A401, a silicon plate B402, and a silicon plate C403 are bonded and bonded together via thermal insulating films 404 and 405 for electrical insulation. A silicon beam 406 having a beam structure and a movable electrode 407 are formed on the silicon plate B402. A movable electrode 407 having a function of a weight is supported by a silicon beam 406.

  The dimension of the gap 408 between the movable electrode 407 and the silicon plate A 401 and the silicon plate C 403 changes according to the magnitude of the vertical acceleration in the figure acting on the silicon beam 406. Since the silicon plate A 401 and the silicon plate C 403 are conductive materials, the portions of the silicon plate A 401 and the silicon plate C 403 facing the movable electrode 407 are fixed electrodes that do not move at all with respect to acceleration. The capacitances C1 and C2 in the air gap 408 change according to the acceleration acting on the sensor. By taking the difference between the capacitance C1 and the capacitance C2, the applied acceleration change can be detected as the capacitance change. In Patent Document 2, the movable electrode 407 is supported hollow using a silicon beam 406, and the silicon beam 406 acts as a spring.

Japanese Patent No. 5831905 Japanese Patent Publication No. 06-023782 Japanese Patent Laid-Open No. 05-052507

  By the way, in the microstructure having the spring structure described above, for example, in the manufacturing process, it is necessary to suppress the deformation and warpage of the spring, but there is a problem that it is not easy in the prior art. For example, Patent Document 1 and Patent Document 2 do not specify a method for suppressing the warpage of the spring structure, and in order to suppress the deformation and warpage of the spring by examining the warpage and deformation of the actually manufactured spring structure. It takes time and effort to change the shape and manufacturing conditions.

  In order to suppress the above-described spring deformation and warping, there is a technique of laminating piezoelectric bodies having different electric resistances (see Patent Document 3). In this technique, as shown in FIG. 7, two piezoelectric bodies 503 and 504 having different electrical resistivity are laminated to form a cantilever actuator. This cantilever actuator has a beam structure in which a laminated portion of a piezoelectric body 503 and a piezoelectric body 504 is sandwiched by a lower electrode 502 and an upper electrode 505. One end of the cantilever is fixed to the substrate 501. In this technique, as described above, the distribution of resistivity is provided in the film thickness direction of the piezoelectric body as two layers, so that the occurrence of warpage of the cantilever due to a temperature change is suppressed as much as possible.

  However, the technique shown in Patent Document 3 described above is based on the premise that a piezoelectric body is used, and is not applicable to the production of a microstructure for a purpose that does not use a thin film piezoelectric body. There are limitations.

  The present invention has been made in order to solve the above-described problems, and an object of the present invention is to make it possible to suppress deformation and warping of a fine beam structure without any material limitation.

  A microelement according to the present invention includes a substrate, a first support portion formed on the substrate, a fixed portion fixed on the first support portion, and an extending portion extending away from the substrate. A beam portion, a second support portion formed on the substrate, and a pressing portion that is fixed on the second support portion and presses the upper surface of the beam portion at the top of the first support portion.

  The extension part of the beam part extends from the fixed part in a first direction parallel to the plane of the substrate, and the holding part is parallel to the plane of the substrate and perpendicular to the first direction. It is good to be fixed to the 2nd support part arranged at two places on both sides of the fixed part in the 2nd direction.

  The method for manufacturing a microelement according to the present invention includes a first step of forming a first support portion on a substrate, a second step of forming a second support portion on the substrate, and a first support portion. A third step of forming a beam portion comprising a fixed portion to be fixed and an extending portion extending away from the substrate; and a beam portion on the upper portion of the first support portion that is fixed on the second support portion. And a fourth step of forming a pressing portion for pressing the upper surface.

  In the method for manufacturing a microelement, in the first step, a first pattern layer including a first region and a second region is formed on a substrate, the first region of the first pattern layer is used as a first support portion, In the second step, a second pattern layer including a third region and a fourth region serving as a beam portion is formed on the first pattern layer, and a third pattern layer is formed in the second region of the first pattern layer. In the third step, the region of the second pattern layer is overlapped on the first region of the first pattern layer and part of the fourth region of the second pattern layer is overlapped on the first support portion. What is necessary is just to form the beam part to which the fixed part was fixed to.

  As described above, according to the present invention, since the pressing portion that presses the upper surface of the upper beam portion of the first support portion is provided, there is no material limitation and the deformation and warping of the fine beam structure are suppressed. An excellent effect that it can be obtained.

FIG. 1A is a plan view showing the configuration of a microelement in an embodiment of the present invention. FIG. 1B is a cross-sectional view showing the structure of the microelement in the embodiment of the present invention. FIG. 1C is a cross-sectional view showing the structure of the microelement in the embodiment of the present invention. FIG. 2A is a cross-sectional view showing the state of an intermediate step for explaining the method for manufacturing a microelement in the embodiment of the present invention. FIG. 2B is a cross-sectional view showing the state of an intermediate step for explaining the method for manufacturing the microelement in the embodiment of the present invention. FIG. 2C is a cross-sectional view showing the state of an intermediate step for explaining the method for manufacturing the microelement in the embodiment of the present invention. FIG. 2D is a cross-sectional view showing the state of an intermediate step for explaining the method for manufacturing the microelement in the embodiment of the present invention. FIG. 2E is a cross-sectional view showing the state of an intermediate step for explaining the method for manufacturing the microelement in the embodiment of the present invention. FIG. 2F is a cross-sectional view showing the state of an intermediate step for explaining the method for manufacturing the fine element in the embodiment of the present invention. FIG. 2G is a cross-sectional view showing the state of an intermediate step for explaining the method for manufacturing the microelement in the embodiment of the present invention. FIG. 2H is a cross-sectional view showing the state of an intermediate step for explaining the method for manufacturing the fine element in the embodiment of the present invention. FIG. 2I is a cross-sectional view showing the state of an intermediate step for explaining the method for manufacturing a microelement in the embodiment of the present invention. FIG. 2J is a cross-sectional view showing the state of an intermediate step for explaining the method for manufacturing the microelement in the embodiment of the present invention. FIG. 3A is a plan view showing a configuration of a microelement for comparison. FIG. 3B is a cross-sectional view illustrating a configuration of a microelement for comparison. FIG. 3C is a characteristic diagram showing characteristics of the fine element. FIG. 4A is a plan view for explaining an application example of the microelement in the embodiment of the present invention. FIG. 4B is a cross-sectional view for explaining an application example of the fine element in the embodiment of the present invention. FIG. 5 is a cross-sectional view showing the configuration of the MEMS element disclosed in Patent Document 1. FIG. 6 is a cross-sectional view showing the configuration of the capacitive acceleration sensor disclosed in Patent Document 2. As shown in FIG. FIG. 7 is a cross-sectional view showing the configuration of the cantilever actuator shown in Patent Document 3. As shown in FIG.

  Hereinafter, the microelement in the embodiment of the present invention will be described with reference to FIGS. 1A, 1B, and 1C. 1B shows a cross section taken along the line aa ′ of FIG. 1A. 1C shows a cross section taken along line bb ′ of FIG. 1A.

 The microelement first includes a substrate 101, a first support portion 102 formed on the substrate 101, and a beam portion 103 fixed to the first support portion 102. Note that an insulating layer 111 is formed on the substrate 101, and the first support portion 102 is formed on the insulating layer 111. The beam portion 103 includes a fixed portion 103a and an extending portion 103b. The fixed portion 103 a of the beam portion 103 is connected and fixed to the first support portion 102. The extending portion 103 b of the beam portion 103 is disposed on the substrate 101 so as to be spaced apart. The extending portion 103 b of the beam portion 103 can be displaced, for example, in a direction approaching the substrate 101 and a direction away from the substrate 101.

  Further, in addition to the above-described configuration, this microelement includes a second support portion 104 formed on the substrate 101 and a beam portion 103 fixed on the second support portion 104 and above the first support portion 102. And a pressing portion 105 for pressing the upper surface.

  Further, in the embodiment, the second portion is sandwiched between the fixed portion 103a in the direction (second direction) perpendicular to the direction parallel to the plane of the substrate 101 (first direction) and parallel to the plane of the substrate (second direction). A support portion 104 is formed. The two second support portions 104 are connected by a connecting portion 104a. The holding part 105 is installed and fixed on two second support parts 104. In this example, the connecting portion 104 a and the second support portion 104 are formed on the insulating layer 111.

  In the embodiment, the lower part of the first support part 102, the connecting part 104a, and the second support part 104 is formed by the pattern formed in the first pattern layer 131 on the substrate 101 (insulating layer 111). Has been. Further, the beam part 103 and the upper part of the second support part 104 are formed by the pattern formed in the second pattern layer 132 on the first pattern layer 131. Further, the pressing portion 105 is formed by a pattern formed in the third pattern layer 133 on the second pattern layer 132.

  As described above, by forming each part with the patterns of the first pattern layer 131, the second pattern layer 132, and the third pattern layer 133, the upper surface of the second support part 104 and the beam part in the fixing part 103a The upper surface of 103 is substantially the same height. In this state, if both end portions of the plate-like pressing portion 105 are fixed to the upper surfaces of the two second support portions 104, the fixing portion 103 a of the beam portion 103 is pressed in the direction of the substrate 101 by the pressing portion 105. It becomes a state.

  Thus, according to the embodiment, the fixing portion 103a of the beam portion 103 is sandwiched and fixed between the first support portion 102 and the pressing portion 105. For this reason, compared with the case where only the lower surface of the fixing portion 103a is fixed to the first support portion 102, the warpage of the extending portion 103b of the beam portion 103 can be limited (suppressed) to a minimum. Further, according to the embodiment, since the warpage is suppressed by the mechanical structure, there is no limitation on the material.

  Next, a method for manufacturing a microelement in the embodiment will be described with reference to FIGS. 2A to 2J. 2A to 2J show cross sections corresponding to the cross section taken along the line aa 'of FIG. 1A. For this reason, the part used as the 2nd support part 104 is not shown by FIG. 2A-FIG. 2J.

First, as shown in FIG. 2A, a substrate 101 is prepared. In addition, the insulating layer 111 is formed over the substrate 101. The substrate 101 is, for example, a well-known Si substrate. In this case, the insulating layer 111 made of SiO _{2 having a} thickness of 0.5 μm, for example, can be formed by thermally oxidizing the surface of the substrate 101. The insulating layer 111 may be formed by a deposition method such as sputtering or CVD (Chemical Vapor Deposition).

  Next, the 1st support part 102 is formed on the board | substrate 101 (1st process). First, as shown in FIG. 2B, a seed layer 151 is formed on the insulating layer 111, and a metal pattern 152 is formed thereon using a mask pattern and a plating method formed by known photolithography. The metal pattern 152 includes a first support portion 102 (first region), a lower portion of the second support portion 104 (second region), and a portion that becomes a connecting portion 104a.

  In the embodiment, the seed layer 151 has a stacked structure of a Ti layer (thickness 0.1 μm) as an adhesion layer to the insulating layer 111 and an Au layer (thickness 0.07 μm) on the Ti layer. The Ti layer and the Au layer may be formed by, for example, a vapor deposition method. The deposition rate of the Ti layer by the vapor deposition method is 40 nm per minute. The deposition rate of the Au layer by vapor deposition is 30 nm per minute.

  After forming the seed layer 151 as described above, a mask pattern having an opening in a region where the metal pattern 152 is to be formed is formed by photolithography. Next, a metal (for example, Au) is grown to a thickness of 7 μm by electrolytic plating in the opening of the formed mask pattern. Thereafter, the metal pattern 152 can be formed by removing the mask pattern. The metal pattern 152 is not limited to Au, but can be other metals such as Ni and Cu. In the above description, Ti is used as the adhesion layer and Au is used as the seed for plating growth. However, the present invention is not limited to this. The adhesion layer may be any metal that can improve adhesion to the insulating layer, such as Cr. It goes without saying that other materials such as Ni and Cu can be used as the seed material.

  Next, the seed layer 151 is selectively removed by etching using the metal pattern 152 as a mask to form the first support portion 102 and the connecting portion 104a as shown in FIG. 2C (first step). Although not shown in FIG. 2C, a lower portion of the second support portion 104 is also formed at the same time. In this way, first, the first pattern layer 131 including the first support portion 102 (first region) and the lower portion (second region) of the second support portion 104 is formed.

  In the etching described above, for example, the upper Au layer of the seed layer 151 is etched by wet etching using an aqueous solution in which hydrochloric acid and nitric acid are mixed as an etchant. In this case, the etching rate is 85 nm per minute. Further, the Ti layer under the seed layer 151 is etched by wet etching using a hydrofluoric acid aqueous solution as an etchant. In this case, the etching rate is 400 nm per minute.

  In the etching of the Au layer, other solutions can be used as long as they can be etched. For example, an iodine aqueous solution can be used. Also, other solutions can be used as long as the Ti layer can be etched in the same manner, and a mixed acid or the like can be used. Further, the etching of the Au layer and the Ti layer can be performed by dry etching using Ar plasma.

  Next, the second support portion 104 is formed on the substrate 101 (second step), and the beam portion 103 fixed by the fixing portion 103a is formed on the first support portion 102 (third step). ).

  First, as shown in FIG. 2D, the sacrificial layer 153 is formed by filling the insulating layer 111 around the first support portion 102 and the connecting portion 104a with resin. The sacrificial layer 153 is formed so as to flatten the steps such as the first support portion 102 and the connecting portion 104a. It is assumed that the upper surface of the first support portion 102, the connecting portion 104a, etc. (first pattern layer 131) and the upper surface of the sacrificial layer 153 form the same plane.

  For example, a coating film may be formed using a photosensitive organic resin by a spin coating method, and the sacrificial layer 153 may be formed by patterning by photolithography and thermal curing. As the photosensitive organic resin, for example, PBO (Poly Benzo Oxazole) can be used. In this case, the temperature condition for thermosetting may be 310 ° C. Note that the sacrificial layer 153 may be formed using a photosensitive organic resin other than PBO. For example, there is ELPACWPR-5100 manufactured by JSR Corporation.

  Next, as shown in FIG. 2E, a seed layer 154 is formed on the planarized sacrificial layer 153 (the first support portion 102 and the coupling portion 104a). The seed layer 154 may be formed in the same manner as the seed layer 151.

  Next, as shown in FIG. 2F, a metal pattern 155 is formed on the seed layer 154 in the same manner as the formation of the metal pattern 152 described above. The metal pattern 155 is formed to a thickness of 15 μm. The metal pattern 155 includes a beam portion 103 (fourth region) and a portion that becomes an upper portion (third region) of the second support portion 104. FIG. 2F shows a metal pattern 155 of a portion that becomes the beam portion 103.

  Next, as described above, the seed layer 154 is selectively etched away using the metal pattern 155 as a mask to form the beam portion 103 as shown in FIG. 2G (third step). Although not shown in FIG. 2G, the upper portion of the second support portion 104 is also formed at the same time, and the second support portion 104 is formed (second step).

  As described above, in the second step and the third step, the second pattern layer including the third region serving as the upper portion of the second support portion 104 and the fourth region serving as the beam portion 103 on the first pattern layer 131. 132, and the fixing portion 103a is fixed on the first support portion 102 in a state where a part of the fourth region of the second pattern layer 132 overlaps the first region of the first pattern layer 131. The beam portion 103 is formed, and the second support portion 104 is formed so that the second region of the first pattern layer 131 overlaps the third region of the second pattern layer 132.

  Next, a pressing portion 105 that is fixed on the second support portion 104 and presses the upper surface of the beam portion 103 above the first support portion 102 is formed (fourth step).

  First, as shown in FIG. 2H, a sacrificial layer 156 is formed, and a seed layer 157 is formed. First, similarly to the sacrificial layer 153 described above, the sacrificial layer 156 is formed so as to flatten the steps such as the beam portion 103 and the upper portion of the second support portion 104 not shown in FIG. 2H. In addition, a seed layer 157 is formed on the planarized sacrificial layer 156 (such as the beam portion 103). The seed layer 157 may be formed in the same manner as the seed layer 151 and the seed layer 154.

  Next, as shown in FIG. 2I, a metal pattern 158 is formed on the seed layer 157 in the same manner as the formation of the metal pattern 152 and the metal pattern 155 described above. The metal pattern 158 is formed to a thickness of 10 μm. The metal pattern 158 includes a portion that becomes the pressing portion 105.

  Next, as described above, the seed layer 157 is selectively removed by etching using the metal pattern 158 as a mask to form the pressing portion 105 as shown in FIG. 2J (fourth step). The pressing portion 105 is formed on the third pattern layer 133 on the second pattern layer 132.

After each portion is formed as described above, if the sacrificial layer 153 and the sacrificial layer 156 are selectively removed, the microelement in the embodiment described with reference to FIGS. 1A, 1B, and 1C can be obtained. For example, the sacrificial layer 153 and the sacrificial layer 156 can be selectively removed by using dry etching with O ₂ plasma. The sacrificial layer 153 and the sacrificial layer 156 may be selectively removed by dry etching using plasma using another gas or mixed gas such as CF ₄ and O ₂ .

  According to the manufacturing method described above, the lower portions of the first support portion 102 and the second support portion 104 are simultaneously formed by the formation process of the first pattern layer 131, and the beam portion 103 and the second support portion 104 are formed by the formation process of the second pattern layer 132. The upper part of the second support part 104 is formed at the same time, and the pressing part 105 is formed by the formation process of the third pattern layer 133.

  By the above manufacturing method, first, the lower surface of the first support portion 102 and the lower surface of the second support portion 104 are fixed to the insulating layer 111, so that the first support portion 102 and the second support portion 104 are attached to the substrate 101. It is in a mechanically fixed state.

  Further, the lower surfaces of both end portions of the pressing portion 105 are fixed to the upper surface of the second support portion 104. Accordingly, the pressing portion 105 is mechanically fixed to the substrate 101 via the second support portion 104.

  On the other hand, the lower surface of the fixing portion 103 a of the beam portion 103 is fixed to the upper surface of the first support portion 102, and the upper surface of the fixing portion 103 a of the beam portion 103 is fixed to the lower surface of the center portion of the pressing portion 105. Thus, the fixing portion 103 a of the beam portion 103 is in a state of being tightly fixed by being sandwiched between the support portion 102 and the pressing portion 105 that are fixed to the substrate 101. As a result, the beam 103 is in a state in which the warpage is controlled to a minimum.

  Next, the effect of suppressing warpage in the embodiment will be described using analysis results and experimental results. First, the beam portion 103 has a thickness of 15 μm and a width of 15 μm. The length in the extending direction (first direction) of the extending part 103b was set to 100 μm. The fixed portion 103a has a length in the first direction of 34 μm and a length (width) in the second direction orthogonal to the first direction of 34 μm.

  On the other hand, the configuration of the beam portion is the same as described above, and the fine element without the holding portion shown in FIGS. FIG. 3B shows a cross section taken along the line aa ′ of FIG. 3A. The reference element includes a substrate 201, a support portion 202 formed on the substrate 201, and a beam portion 203 fixed to the support portion 202. Note that an insulating layer 211 is formed over the substrate 201, and a support portion 202 is formed over the insulating layer 211.

  Further, similarly to the microelement of the embodiment, the beam portion 203 includes a fixed portion 203a and an extending portion 203b. The fixed portion 203 a of the beam portion 203 is connected and fixed to the support portion 202. The extended portion 203 b of the beam portion 203 is disposed on the substrate 201 so as to be spaced apart.

  Also in this reference element, the beam portion 203 has a thickness of 15 μm and a width of 15 μm. The length in the extending direction (first direction) of the extending portion 203b was set to 100 μm. The fixing portion 203a has a length in the first direction of 34 μm and a width of 34 μm.

  FIG. 3C shows the result of analyzing the warp of the beam portion using the finite element method in the fine element and the reference element in the above-described embodiment. The horizontal axis in FIG. 3C is the distance from the fixed part in the first direction in the extending part of the beam part, and the vertical axis in FIG. 3C is the deformation amount (warpage) in the extending part of the beam part. In FIG. 3C, the result of the fine element in the embodiment is indicated by a solid line, and the result of the reference element is indicated by a dotted line. As shown in FIG. 3C, it can be seen that the deformation amount of the fine element in the embodiment is clearly smaller than that of the reference element.

  Next, application examples of the microelement in the embodiment will be described with reference to FIGS. 4A and 4B. FIG. 4B shows a cross section taken along the line aa ′ of FIG. 4A. In the application example, a weight portion 103c having a wider tip end side of the extending portion 103b is provided. The weight portion 103c is also disposed on the substrate 101 so as to be spaced apart. Further, the substrate 101 is electrically connected to the ground (GND), and a voltage is applied to the beam portion 103. Thus, when a voltage is applied between the substrate 101 and the beam portion 103, an electrostatic attractive force is generated between the weight portion 103c and the substrate 101, and the weight portion 103c is drawn toward the substrate 101 side. By comprising in this way, it can be set as the electrostatic actuator by which the weight part 103c was supported by the spring by the extension part 103b.

  Such a configuration of the electrostatic actuator can be applied to an acceleration sensor as disclosed in Patent Document 1 and Patent Document 2. As described above, the microstructure according to the embodiment can realize a highly accurate device in which deformation and warpage of the spring are suppressed by being applied to various devices manufactured using the MEMS technology.

  As described above, according to the present invention, since the pressing portion that presses the upper surface of the upper beam portion of the first support portion is provided, there is no material limitation, and the deformation and warping of the fine beam structure can be prevented. It becomes possible to suppress.

  The present invention is not limited to the embodiment described above, and many modifications and combinations can be implemented by those having ordinary knowledge in the art within the technical idea of the present invention. It is obvious. For example, in the above description, the beam portion, the first support portion, the second support portion, and the pressing portion are made of metal, but the present invention is not limited to this, and semiconductors, metal compounds, semiconductor compounds, metal oxides, and semiconductor oxides Needless to say, it may be made of other materials.

  DESCRIPTION OF SYMBOLS 101 ... Board | substrate, 102 ... 1st support part, 103 ... Beam part, 103a ... Fixing part, 103b ... Extension part, 104 ... 2nd support part, 104a ... Connection part, 105 ... Holding part, 111 ... Insulating layer, 131 ... 1st pattern layer, 132 ... 2nd pattern layer, 133 ... 3rd pattern layer.

Claims (4)

A substrate,
A first support formed on the substrate;
A beam portion comprising a fixed portion fixed on the first support portion and an extending portion extending away from the substrate;
A second support formed on the substrate;
A microelement comprising: a pressing portion fixed on the second support portion and pressing an upper surface of the beam portion above the first support portion. The fine element according to claim 1,
The extending part of the beam part extends in a first direction parallel to the plane of the substrate from the fixed part,
The pressing portion is fixed to the second support portions arranged at two positions sandwiching the fixing portion in a second direction parallel to the plane of the substrate and perpendicular to the first direction. Fine element. A first step of forming a first support on the substrate;
A second step of forming a second support on the substrate;
A third step of forming a beam portion including a fixed portion fixed on the first support portion and an extending portion extending away from the substrate;
And a fourth step of forming a pressing part that is fixed on the second supporting part and presses the upper surface of the beam part above the first supporting part. In the manufacturing method of the fine element according to claim 3,
In the first step, a first pattern layer including a first region and a second region is formed on the substrate, and the first region of the first pattern layer is used as the first support portion.
In the second step, a second pattern layer including a third region and a fourth region serving as the beam portion is formed on the first pattern layer, and the second region of the first pattern layer includes the second region. As the second support portion as a state where the third region of the second pattern layer overlaps,
In the third step, in a state where a part of the fourth region of the second pattern layer overlaps the first region of the first pattern layer, the fixing unit is disposed on the first support unit. A method of manufacturing a microelement, wherein the beam portion is fixed.

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