JP2018138683A - Impedance setting device, film deposition system, control method, and program - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an impedance setting device with which film deposition next to film deposition performed in an abnormal state because of occurrence of disturbance can be performed in a normal state when no disturbance occurs.SOLUTION: An impedance setting device sets an adjustment value of impedance of a matching unit matching impedance between a high-frequency power source and a film deposition chamber of a film deposition device. The impedance setting device includes a log acquisition part, a representative value specification part, and a setting part. The log acquisition part acquires a log showing the adjustment value of the impedance when performing automatic adjustment of the impedance between the high-frequency power source and the film deposition chamber of the film deposition device in a film deposition process with the film deposition device. The representative value specification part specifies the representative value of the adjustment value of the impedance on the basis of the log acquired by the log acquisition part. The setting part sets the representative value as the adjustment value of the impedance of the matching unit.SELECTED DRAWING: Figure 3

Description

  The present invention relates to an impedance setting device, a film forming system, a control method, and a program.

In a plastic container for beverages or the like, a CVD film may be generated on the inner surface of the plastic container.
In Patent Document 1, as a related technique, CVD is performed on the inner surface of a plastic container using a two-stage matching device in which a fixed matching device connected to each film forming chamber is connected to the subsequent stage of one automatic matching device. Techniques for producing membranes are described.

JP 2004-002905 A

In film formation in the automatic mode of the automatic matching unit, when the impedance setting is changed from a normal state to an abnormal state due to a disturbance, the impedance gradually changes when returning from the abnormal state to the normal state. Therefore, the next film formation after the film formation performed in the abnormal state with the disturbance may be performed in the abnormal state without returning to the normal state even when the disturbance is not generated. .
Therefore, there has been a demand for a technique capable of performing the film formation after the film formation performed in an abnormal state with a disturbance in a normal state when no disturbance has occurred.

  An object of the present invention is to provide an impedance setting device, a film forming system, a control method, and a program that can solve the above-described problems.

  According to the first aspect of the present invention, the impedance setting device is an impedance setting device that sets an adjustment value of an impedance of a matching unit that matches impedance between a high-frequency power source and a film forming chamber of the film forming device. A log acquisition unit for acquiring a log indicating an impedance adjustment value when automatic impedance matching is performed between the high-frequency power source and the film forming chamber of the film forming apparatus in the film forming process by the film forming apparatus; A representative value specifying unit that specifies a representative value of an impedance adjustment value based on the log acquired by the log acquisition unit, and a setting unit that sets the representative value as an impedance adjustment value of the matching unit. .

  According to a second aspect of the present invention, in the impedance setting device according to the first aspect, the setting unit may set the representative value as an adjustment value of the impedance of a matching unit that performs the automatic matching of the impedance. Good.

  According to a third aspect of the present invention, in the impedance setting device according to the first aspect or the second aspect, the setting unit is configured to adjust the impedance of a matching unit different from the matching unit that performs the automatic impedance matching. The representative value may be set as the adjustment value.

  According to the fourth aspect of the present invention, there is provided a film forming system having the impedance setting device according to any one of the first to third aspects and an impedance adjustment value set by a setting unit of the impedance setting device. And a matching device that operates based on the above.

  According to a fifth aspect of the present invention, there is provided a control method for setting an adjustment value of an impedance of a matching unit for matching impedance between a high-frequency power source and a film forming chamber of a film forming apparatus, In the film forming process by the film forming apparatus, obtaining a log indicating an impedance adjustment value when automatic impedance matching is performed between the high-frequency power source and the film forming chamber of the film forming apparatus; Specifying a representative value of the impedance adjustment value based on the log, and setting the representative value as an adjustment value of the impedance of the matching unit.

  According to the sixth aspect of the present invention, the program stores the film formation in the computer for setting the adjustment value of the impedance of the matching unit that matches the impedance between the high-frequency power source and the film formation chamber of the film formation apparatus. In the film forming process by the apparatus, acquiring a log indicating an impedance adjustment value when automatic impedance matching between the high-frequency power source and the film forming chamber of the film forming apparatus is performed; and in the acquired log Based on this, the representative value of the impedance adjustment value is specified, and the representative value is set as the impedance adjustment value of the matching unit.

  According to the impedance setting device according to the embodiment of the present invention, film formation subsequent to film formation performed in an abnormal state due to a disturbance can be performed in a normal state when no disturbance occurs.

It is a figure which shows an example of a structure of the film-forming system by 1st embodiment of this invention. It is a figure which shows an example of a structure of the film-forming chamber by 1st embodiment of this invention. It is a figure which shows an example of the impedance setting apparatus by 1st embodiment of this invention. It is a figure which shows an example of the processing flow of the impedance setting apparatus by 1st embodiment of this invention. It is a figure which shows an example of a structure of the film-forming system by 2nd embodiment of this invention. It is a figure which shows an example of the processing flow of the impedance setting apparatus by 2nd embodiment of this invention.

<First embodiment>
The configuration of the film forming system according to the first embodiment of the present invention will be described below.
As shown in FIG. 1, the film forming system 1 according to the first embodiment of the present invention includes a film forming apparatus 10, a high-frequency power source 20, an automatic matching unit 40a, and an impedance setting device 60.

  The film forming apparatus 10 is an apparatus that generates a CVD (Chemical Vapor Deposition) film on the inner surface of a plastic container. The CVD (Chemical Vapor Deposition) film is, for example, a DLC (Diamond Like Carbon) film. The film forming apparatus 10 includes a film forming chamber 100a.

  As shown in FIG. 2, the film forming chamber 100a includes a housing 101a, an external electrode 102a, a vacuum chamber 103a, an internal electrode 104a, an exhaust pipe 105a, and a source gas supply pipe 106a.

  The housing 101a includes an upper part 101aa and a lower part 101ab. The casing 101a forms the outer periphery of the film forming chamber 100a and prevents leakage of electromagnetic waves from the inside to the outside.

The external electrode 102a includes an upper part 102aa and a lower part 102ab.
The lower part 102ab accommodates the plastic container B.
The lower part 102ab moves downward when the plastic container B is put in and out of the lower part 102ab.
The upper part 102aa and the lower part 102ab are configured to perform plasma discharge in a vacuum chamber 103a formed inside the external electrode 102a.

  After the plastic container B is accommodated in the upper part 102aa and the vacuum chamber 103a is sealed, the vacuum chamber 103a is brought into a vacuum state by discharging air from the exhaust pipe 105a by a vacuum pump (not shown).

  The internal electrode 104a ejects the source gas supplied from the source gas supply pipe 106a into the vacuum chamber 103a in a vacuum state and diffuses it uniformly. When the high frequency power PW is supplied from the high frequency power supply 20 to the external electrode 102a via the automatic matching device 40a after the source gas is uniformly diffused in the vacuum chamber 103a, the gap between the grounded internal electrode 104a and the external electrode 102a is obtained. Plasma is generated. Due to the generation of the plasma, a CVD film is generated on the inner surface of the plastic container B.

The exhaust pipe 105a is a pipe for exhausting the air in the vacuum chamber 103a to the outside.
The source gas supply pipe 106a is a pipe for diffusing the source gas into the plastic container B through the internal electrode 104a.

Although not shown in FIG. 2, the vacuum chamber 103 a is formed in a substantially similar shape along the outer shape of the plastic container B, and the outer shape of the internal electrode 104 a is disposed at the center of the plastic container B. It is desirable.
In this case, a uniform CVD film can be formed on the inner surface of the plastic container B.

  The high frequency power source 20 generates high frequency power PW generated from an AC commercial power source. The high frequency power supply 20 transmits high frequency power PW to the film forming chamber 100a via the automatic matching unit 40a.

  The automatic matching unit 40a has an automatic mode in which the impedance adjustment value is adjusted by itself to match the impedance, and a fixed mode in which the impedance is matched by using the impedance adjustment value set from the outside. The automatic matching unit 40a matches the impedance between the high frequency power supply 20 and the film forming chamber 100a in the automatic mode. As will be described later, the automatic matching unit 40a uses the representative value of the impedance specified by the representative value specifying unit 602 based on the log when the inner surface of the plastic container B is normally formed as an adjustment value. The automatic matching unit 40a matches the impedance between the high-frequency power source 20 and the film forming chamber 100a in the fixed mode after using the representative value as the adjustment value. The automatic matching unit 40a matches the impedance between the high-frequency power source 20 and the film forming chamber 100a, so that high-efficiency and stable high-frequency power PW is transmitted to the film forming chamber 100a. Thereby, electric power can be efficiently supplied to the external electrode, and a plastic container B coated with a CVD film having a substantially uniform coating thickness can be generated.

  The impedance setting device 60 is a device that sets the impedance of the automatic matching unit 40a that matches the impedance between the high-frequency power source 20 and the film forming chamber 100a. As shown in FIG. 3, the impedance setting device 60 includes a log acquisition unit 601, a representative value specifying unit 602, and a setting unit 603.

When the high-frequency power PW having high efficiency and stability is transmitted to the film forming chamber 100a, that is, the log acquisition unit 601 automatically adjusts the impedance between the high-frequency power source 20 and the film forming chamber 100a. When a normal plastic container B coated with a CVD film having a substantially uniform coating thickness is generated, information indicating the impedance adjustment value when the automatic matching unit 40a performs impedance matching is acquired as a log. .
It should be noted that the impedance adjustment value in the embodiment of the present invention is a parameter (for example, an adjustment range) set internally by the automatic matching unit 40a in order to obtain a desired impedance when the automatic matching unit 40a performs impedance matching. In the case of 0 to 100%, it may be a parameter indicating what percentage to adjust. The impedance adjustment value in the embodiment of the present invention may be the impedance of the automatic matching unit 40a itself when the automatic matching unit 40a performs impedance matching.

The representative value specifying unit 602 specifies the representative value of the impedance adjustment value based on the log acquired by the log acquisition unit 601.
Specifically, the representative value specifying unit 602 specifies, for example, the average value of the impedance adjustment values at each time indicated by the log as the representative value. Alternatively, the representative value specifying unit 602 specifies, for example, the average value of the maximum impedance adjustment value and the minimum impedance adjustment value indicated by the log as the representative value. Alternatively, the representative value specifying unit 602 specifies, for example, the median value of the impedance adjustment values at each time as the representative value.

  The setting unit 603 sets the representative value specified by the representative value specifying unit 602 as the impedance adjustment value of the automatic matching unit 40a.

Next, processing of the impedance setting device 60 in the film forming system 1 according to the first embodiment of the present invention will be described.
Here, the processing flow of the impedance setting device 60 according to the first embodiment of the present invention shown in FIG. 4 will be described.
Note that the film forming apparatus 10 will be described as including only one film forming chamber 100a connected to the automatic aligner 40a.

  As shown in FIG. 2, the plastic container B is placed in the film forming chamber 100a. The vacuum pump exhausts the air in the vacuum chamber 103a to the outside and puts the vacuum chamber 103a in a vacuum state. The internal electrode 104a ejects the source gas supplied from the source gas supply pipe 106a into the vacuum chamber 103a in a vacuum state and diffuses it uniformly.

  The high frequency power PW is supplied from the high frequency power supply 20 to the film forming chamber 100a via the automatic matching unit 40a.

  While the high frequency power PW is supplied to the film forming chamber 100a, the automatic matching unit 40a matches the impedance between the high frequency power supply 20 and the film forming chamber 100a. The automatic matching unit 40a matches the impedance at a predetermined time interval shorter than the high frequency power PW supplied to the film forming chamber 100a.

When the high frequency power PW is supplied from the high frequency power supply 20 to the film forming chamber 100a, a CVD film is generated on the inner surface of the plastic container B.
Here, it is determined whether or not the CVD film generated on the inner surface of the plastic container B is normal. Note that this determination may be performed by a dedicated device that measures film thickness, film quality, and the like and determines whether or not those measured values are within a predetermined range. Alternatively, the person in charge of determination may make a manual measurement and determination. Moreover, the person in charge of judgment may judge visually.

  When the inner surface of the plastic container B is normally formed, the log acquisition unit 601 acquires a log of the automatic matching unit 40a while the high frequency power PW is supplied to the film formation chamber 100a (Step S1).

  The representative value specifying unit 602 specifies the representative value of the impedance adjustment value based on the log acquired by the log acquisition unit 601 (step S2).

  The automatic matching unit 40a is switched from the automatic mode in which the impedance adjustment value is adjusted by itself to match the impedance to the fixed mode in which the impedance is matched using the impedance adjustment value set from the outside.

  The setting unit 603 sets the representative value specified by the representative value specifying unit 602 as the impedance adjustment value of the automatic matching unit 40a (step S3).

  The automatic matching unit 40a continues the operation in the fixed mode after the representative value is set as the impedance adjustment value of the automatic matching unit 40a.

  The time during which the high frequency power PW is supplied to the film forming chamber 100a is about 1 to 2 seconds. When the inner surface of the plastic container B is normally formed, the high frequency power PW is supplied to the film forming chamber 100a. It has been experimentally found that the impedance of the high-frequency power source 20 and the impedance of the film forming chamber 100a during the period do not show large changes. Therefore, even when the adjustment value of the impedance is fixed to, for example, the average value or the representative value of the median value of the adjustment value of the impedance at each time indicated by the log, the high-frequency power PW that is stable with high efficiency can be obtained. Power is transmitted to 100a1. Thereby, electric power can be supplied uniformly to the external electrodes, and a plastic container B coated with a CVD film having a substantially uniform coating thickness can be generated.

  Note that, in the film forming system 1 according to the embodiment of the present invention, the impedance setting device 60 sets different film forming chambers in order to form films on the inner surfaces of the plastic containers B having different shapes, or different source gases. For example, when the inner surface of the plastic container B is formed using the above, the log of the automatic matching unit 40a is acquired, the representative value is specified, and the representative value is reset as the impedance adjustment value in the matching unit. .

The film forming system 1 according to the first embodiment of the present invention has been described above.
In the film forming system 1 according to the first embodiment of the present invention, the impedance setting device 60 includes a log acquisition unit 601, a representative value specifying unit 602, and a setting unit 603. The log acquisition unit 601 acquires a log when automatic impedance matching is performed in the film forming process by the film forming apparatus 10. The representative value specifying unit 602 specifies the representative value of impedance based on the log acquired by the log acquisition unit 601. The setting unit 603 sets the representative impedance value as the impedance adjustment value of the automatic matching unit 40a.
In this way, in the film formation subsequent to the film formation performed in an abnormal state due to the disturbance, the automatic matching unit 40a operates with the impedance adjustment value fixed to the representative value, and thus no disturbance is generated. In this case, the automatic matching unit 40a can match the impedance between the high frequency power source 20 and the film forming chamber 100a. As a result, highly efficient and stable high frequency power PW is transmitted to the film forming chamber 100a. As a result, electric power can be evenly supplied to the external electrodes, and the next coating film can be generated in a normal state after a disturbance has occurred and is performed in an abnormal state, and can be coated with a substantially uniform CVD film. Normal plastic containers can be produced.

<Second Embodiment>
The configuration of the film forming system according to the second embodiment of the present invention will be described.
As shown in FIG. 5, the film forming system 1 according to the second embodiment of the present invention includes a film forming apparatus 10, a high frequency power source 20, a distributor 30, an automatic matching unit 40a, and fixed matching units 40b1 and 40b2. And a control device 50 and an impedance setting device 60.
Note that the fixed matching units 40b1 and 40b2 according to the second embodiment of the present invention are matching units that match impedances using an adjustment value of impedance set from the outside.

  The film forming apparatus 10 includes film forming chambers 100a1, 100a2, and 100a3. Hereinafter, the film formation chambers 100a1, 100a2, and 100a3 are collectively referred to as a film formation chamber 100a.

  Each of the film forming chambers 100a is similar to the film forming chamber 100a shown in FIG. 2, and includes a housing 101a, an external electrode 102a, a vacuum chamber 103a, an internal electrode 104a, an exhaust pipe 105a, and a source gas supply pipe. 106a.

  The casing 101a forms the outer periphery of the film forming chamber 100a and prevents leakage of electromagnetic waves from the inside to the outside.

  The high frequency power source 20 generates high frequency power PW generated from an AC commercial power source. The high frequency power supply 20 transmits high frequency power PW to the film forming chamber 100a1 via the distributor 30 and the automatic matching unit 40a. The high frequency power supply 20 transmits high frequency power PW to the film forming chamber 100a2 via the distributor 30 and the fixed matching unit 40b1. The high frequency power supply 20 transmits high frequency power PW to the film forming chamber 100a3 via the distributor 30 and the fixed matching unit 40b2.

  Based on the control by the control device 50, the distributor 30 switches the connection to the power transmission destination of the high-frequency power PW to the automatic matching unit 40a, the fixed matching unit 40b1, or the fixed matching unit 40b2.

  The automatic aligner 40a is connected to the film forming chamber 100a1. The automatic matching unit 40a matches the impedance between the high frequency power source 20 and the film forming chamber 100a1. The automatic matching unit 40a uses the representative value of the impedance specified by the representative value specifying unit 602 based on the log when the inner surface of the plastic container B is normally formed as an adjustment value. The automatic matching unit 40a matches the impedance between the high-frequency power source 20 and the film forming chamber 100a1 thereafter using the representative value as the adjustment value. When the distributor 30 switches to the automatic matching unit 40a as a transmission destination of the high frequency power PW, the high frequency power PW is transmitted to the film forming chamber 100a1 via the automatic matching unit 40a. The automatic matching unit 40a matches the impedance between the high-frequency power source 20 and the film forming chamber 100a1, so that high-efficiency and stable high-frequency power PW is transmitted to the film forming chamber 100a1. Thereby, electric power can be efficiently supplied to the external electrode, and a plastic container B coated with a CVD film having a substantially uniform coating thickness can be generated.

  The fixed matching unit 40b1 is connected to the film forming chamber 100a2. The fixed matching unit 40b1 is configured such that when the inner surface of the plastic container B is formed normally, the representative value specifying unit 602 sets the representative value of the impedance specified based on the log as an adjustment value, and the high frequency power source 20 and the film forming chamber. The impedance between 100a2 is matched. When the distributor 30 switches to the fixed matching unit 40b1 as the transmission destination of the high frequency power PW, the high frequency power PW is transmitted to the film forming chamber 100a2 via the fixed matching unit 40b1. The fixed matching unit 40b1 matches the impedance between the high-frequency power source 20 and the film forming chamber 100a2, so that high-efficiency and stable high-frequency power PW is transmitted to the film forming chamber 100a2. Thereby, electric power can be efficiently supplied to the external electrode, and a plastic container B coated with a CVD film having a substantially uniform coating thickness can be generated.

  The fixed matching unit 40b2 is connected to the film forming chamber 100a3. The fixed matching unit 40b2 is configured such that when the inner surface of the plastic container B is formed normally, the representative value specifying unit 602 based on the log sets the representative value of the impedance specified based on the log as an adjustment value. Match impedance with 100a3. When the distributor 30 switches to the fixed matching unit 40b2 as a transmission destination of the high frequency power PW, the high frequency power PW is transmitted to the film forming chamber 100a3 through the fixed matching unit 40b2. The fixed matching unit 40b2 matches the impedance between the high-frequency power source 20 and the film forming chamber 100a3, so that high-efficiency and stable high-frequency power PW is transmitted to the film forming chamber 100a3.

  The control device 50 transmits a control signal to the distributor 30. The control signal includes information indicating the transmission destination of the high-frequency power PW, that is, information indicating the connection destination to which the distributor 30 is connected (for example, identification information of the automatic matching device 40a that is the direct connection destination, the fixed matching device 40b1, 40b2 identification information and information indicating the identification information of the deposition chambers 100a1, 100a2, or 100a3, which are indirect connection destinations, are included.

The impedance setting device 60 is a device that sets the impedance of the automatic matching unit 40a that matches the impedance between the high-frequency power source 20 and the film forming chamber 100a1. The impedance setting device 60 is a device that sets the impedance of the fixed matching unit 40b1 that matches the impedance between the high-frequency power source 20 and the film forming chamber 100a2. The impedance setting device 60 is a device that sets the impedance of the fixed matching unit 40b2 that matches the impedance between the high-frequency power source 20 and the film forming chamber 100a3.
Similarly to the impedance setting device 60 according to the first embodiment of the present invention shown in FIG. 3, the impedance setting device 60 according to the second embodiment of the present invention includes a log acquisition unit 601, a representative value specifying unit 602, A setting unit 603.

  When the log acquisition unit 601 transmits high-efficiency and stable high-frequency power PW to the film forming chamber 100a1, that is, the automatic matching unit 40a matches the impedance between the high-frequency power source 20 and the film forming chamber 100a1, When a normal plastic container B coated with a CVD film having a substantially uniform coating thickness is generated, information indicating an impedance adjustment value when the automatic matching unit 40a performs impedance matching is acquired as a log. .

The representative value specifying unit 602 specifies the representative value of the impedance adjustment value based on the log acquired by the log acquisition unit 601.
Specifically, the representative value specifying unit 602 specifies, for example, the average value of the impedance adjustment values at each time indicated by the log as the representative value. Alternatively, the representative value specifying unit 602 specifies, for example, the average value of the maximum impedance adjustment value and the minimum impedance adjustment value indicated by the log as the representative value. Alternatively, the representative value specifying unit 602 specifies, for example, the median value of the impedance adjustment values at each time as the representative value.

  The setting unit 603 sets the representative value specified by the representative value specifying unit 602 as the impedance adjustment value of the automatic matching unit 40a. The setting unit 603 sets the representative value specified by the representative value specifying unit 602 as an adjustment value of the impedance of the fixed matching unit 40b1. The setting unit 603 sets the representative value specified by the representative value specifying unit 602 as an adjustment value of the impedance of the fixed matching unit 40b2.

Next, processing of the impedance setting device 60 in the film forming system 1 according to the second embodiment of the present invention will be described.
Here, the processing flow of the impedance setting device 60 according to the second embodiment of the present invention shown in FIG. 6 will be described.
The film forming apparatus 10 includes three film forming chambers: a film forming chamber 100a1 connected to the automatic aligner 40a, a film forming chamber 100a2 connected to the fixed aligner 40b1, and a film forming chamber 100a3 connected to the fixed aligner 40b2. It explains as what is provided.
In the second embodiment of the present invention, each film forming chamber 100a includes a casing 101a having the same numeral at the end of the reference numeral, an external electrode 102a, a vacuum chamber 103a, an internal electrode 104a, and an exhaust pipe. 105a and the source gas supply pipe 106a are provided, and the following description will be made in association with the reference numerals.

  A plastic container B is placed in the film forming chamber 100a1. The vacuum pump exhausts the air in the vacuum chamber 103a1 to the outside and puts the vacuum chamber 103a1 in a vacuum state. The internal electrode 104a1 ejects the source gas supplied from the source gas supply pipe 106a1 into the vacuum chamber 103a1 in a vacuum state and diffuses it uniformly.

  The control device 50 transmits a control signal for setting the connection destination to the film forming chamber 100 a 1 to the distributor 30.

  The distributor 30 receives a control signal from the control device 50. When receiving the control signal, the distributor 30 connects to the automatic matching unit 40a according to the identification information of the automatic matching unit 40a indicating the connection destination included in the control signal.

  When the distributor 30 is connected to the automatic matching unit 40a, the high frequency power PW is supplied from the high frequency power source 20 to the film forming chamber 100a1 via the distributor 30 and the automatic matching unit 40a.

  While the high frequency power PW is supplied to the film forming chamber 100a1, the automatic matching unit 40a matches the impedance between the high frequency power supply 20 and the film forming chamber 100a1. The automatic matching unit 40a matches the impedance at a predetermined time interval shorter than the high frequency power PW supplied to the film forming chamber 100a.

When the high frequency power PW is supplied from the high frequency power source 20 to the film forming chamber 100a1, a CVD film is generated on the inner surface of the plastic container B.
Here, it is determined whether or not the CVD film generated on the inner surface of the plastic container B is normal.

  When the inner surface of the plastic container B is normally formed, the log acquisition unit 601 acquires the log of the automatic matching unit 40a while the high frequency power PW is supplied to the film formation chamber 100a (step S11).

  The representative value specifying unit 602 specifies the representative value of the impedance adjustment value based on the log acquired by the log acquisition unit 601 (step S12).

  The automatic matching unit 40a is switched from the automatic mode in which the impedance adjustment value is adjusted by itself to match the impedance to the fixed mode in which the impedance is matched using the impedance adjustment value set from the outside.

  The setting unit 603 sets the representative value specified by the representative value specifying unit 602 as the impedance adjustment value of the automatic matching unit 40a, and sets the representative value specified by the representative value specifying unit 602 as the impedance adjustment value of the fixed matching unit 40b1. The representative value specified by the representative value specifying unit 602 is set as the impedance adjustment value of the fixed matching unit 40b2 (step S13).

  The automatic matching unit 40a continues the operation in the fixed mode after the representative value is set as the impedance adjustment value of the automatic matching unit 40a.

  The time during which the high frequency power PW is supplied to the film forming chamber 100a is about 1 to 2 seconds. When the inner surface of the plastic container B is normally formed, the high frequency power PW is supplied to the film forming chamber 100a. It has been experimentally found that the impedance of the high-frequency power source 20 and the impedance of the film forming chamber 100a during the period do not show large changes. Further, it has been experimentally found that the impedances of the film forming chambers 100a are almost the same and do not show a large difference. Therefore, even when the adjustment value of the impedance is fixed, high-frequency power PW that is stable with high efficiency is transmitted to the film forming chamber 100a. Thereby, electric power can be supplied uniformly to the external electrodes, and a plastic container B coated with a CVD film having a substantially uniform coating thickness can be generated. Therefore, even when the adjustment value of the impedance is fixed to, for example, the average value or the representative value of the median value of the adjustment value of the impedance at each time indicated by the log, the high-frequency power PW that is stable with high efficiency can be obtained. Power is transmitted to each of 100a. Thereby, electric power can be supplied uniformly to the external electrodes, and a plastic container B coated with a CVD film having a substantially uniform coating thickness can be generated.

The film forming system 1 according to the second embodiment of the present invention has been described above.
In the film forming system 1 according to the second embodiment of the present invention, the impedance setting device 60 includes a log acquisition unit 601, a representative value specifying unit 602, and a setting unit 603. The log acquisition unit 601 acquires a log when automatic impedance matching is performed in the film forming process by the film forming apparatus 10. The representative value specifying unit 602 specifies the representative value of impedance based on the log acquired by the log acquisition unit 601. The setting unit 603 sets the representative impedance value as the impedance adjustment value of the automatic matching unit 40a. The setting unit 603 sets the representative impedance value as the impedance adjustment value of the fixed matching units 40b1 and 40b2.
In this way, in the film formation subsequent to the film formation performed in an abnormal state due to the disturbance, the automatic matching unit 40a operates with the impedance adjustment value fixed to the representative value, and thus no disturbance is generated. In this case, the automatic matching unit 40a can match the impedance between the high frequency power source 20 and the film forming chamber 100a1. Further, in the film formation after the film formation performed in an abnormal state due to the disturbance, the fixed matching unit 40b1 operates with the impedance adjustment value fixed to the representative value, so that the fixed matching unit 40b1 is fixed when the disturbance is not generated. The matching unit 40b1 can match the impedance between the high-frequency power source 20 and the film forming chamber 100a2. Further, in the subsequent film formation after the film formation performed in an abnormal state due to the disturbance, the fixed matching unit 40b2 operates with the impedance adjustment value fixed to the representative value, so that it is fixed when the disturbance does not occur. The matching unit 40b2 can match the impedance between the high-frequency power source 20 and the film forming chamber 100a3. As a result, highly efficient and stable high frequency power PW is transmitted to the film forming chamber 100a. As a result, electric power can be evenly supplied to the external electrodes, and the next coating film can be generated in a normal state after a disturbance has occurred and is performed in an abnormal state, and can be coated with a substantially uniform CVD film. Normal plastic containers can be produced. In addition, since the film forming chambers 100a2 and 100a3 use a fixed matching device having a lower function and lower cost than the automatic matching device, the film forming system 1 can be manufactured at a low cost.

The film forming system 1 according to the second embodiment of the present invention has been described as including the automatic matching unit 40a. However, the film forming system 1 according to the second embodiment of the present invention does not necessarily include the automatic matching unit 40a. The film forming chamber 100a included in the film forming system 1 may be all connected to the fixed matching unit 40b, for example.
In this case, in addition to the film forming system 1, the automatic aligner 40a is connected to a chamber similar to the film forming chamber 100a provided in the film forming system 1, and the log acquisition unit 601 has a normal inner surface of the plastic container B. When the film is formed, a log of the automatic matching unit 40a is acquired while the high frequency power PW is supplied to the film forming chamber 100a. The representative value specifying unit 602 specifies the representative value of impedance based on the log acquired by the log acquisition unit 601. And the setting part 603 should just set the representative value of an impedance as an adjustment value of the impedance of each fixed matching device.

  The film forming system 1 according to the second embodiment of the present invention has been described as including a fixed matching unit as a different matching unit from the automatic matching unit 40a used when specifying a representative value of impedance. However, the film forming system 1 according to the second embodiment of the present invention is not limited to the one provided with a fixed matching device as a different matching device from the automatic matching device 40a used when specifying the representative value of impedance. The film forming system 1 according to the second embodiment of the present invention is a matching that operates with an adjustment value of impedance fixed to the representative value as a matching device different from the automatic matching device 40a used when specifying the representative value of impedance. As long as it is a device, it may be a fixed matching device, a semi-automatic matching device or an automatic matching device.

  The film forming system 1 according to the second embodiment of the present invention has been described as including two fixed matching units 40b1 and 40b2 as fixed matching units. However, the film forming system 1 according to the second embodiment of the present invention is not limited to one having two fixed matching devices 40b1 and 40b2 as the fixed matching devices. The film forming system 1 according to the second embodiment of the present invention may include one fixed matching device or any of a plurality of fixed matching devices.

  Note that the processing order of the processing according to the embodiment of the present invention may be changed within a range in which appropriate processing is performed.

  Each of the storage units in the present invention may be provided anywhere as long as appropriate information is transmitted and received. Each of the storage units may exist in a range in which appropriate information is transmitted and received, and data may be distributed and stored.

  Although the embodiment of the present invention has been described, each of the automatic matching unit 40a, the control device 50, the impedance setting device 60, and the apparatus in the film forming system 1 described above may have a computer system therein. The process described above is stored in a computer-readable recording medium in the form of a program, and the above process is performed by the computer reading and executing this program. Here, the computer-readable recording medium means a magnetic disk, a magneto-optical disk, a CD-ROM, a DVD-ROM, a semiconductor memory, or the like. Alternatively, the computer program may be distributed to the computer via a communication line, and the computer that has received the distribution may execute the program.

  The program may realize part of the functions described above. Further, the program may be a so-called difference file (difference program) that can realize the above-described functions in combination with a program already recorded in the computer system.

  Although several embodiments of the present invention have been described, these embodiments are examples and do not limit the scope of the invention. These embodiments may be variously added, omitted, replaced, and changed without departing from the gist of the invention.

DESCRIPTION OF SYMBOLS 1 ... Film-forming system 10 ... Film-forming apparatus 20 ... High frequency power supply 30 ... Distributor 40a ... Automatic matching device 40b1, 40b2 ... Fixed matching device 50 ... Control device 60- .. Impedance setting devices 100a, 100a1, 100a2, 100a3... Deposition chamber 101a... Case 102a .. External electrode 103a... Vacuum chamber 104a. ..Source gas supply pipe 601... Log acquisition unit 602 .. representative value specifying unit 603... Setting unit

Claims (6)

An impedance setting device that sets an adjustment value of an impedance of a matching unit that matches an impedance between a high-frequency power source and a film forming chamber of the film forming device,
In a film forming process by the film forming apparatus, a log acquisition unit that acquires a log indicating an impedance adjustment value when automatic impedance matching between the high-frequency power source and the film forming chamber of the film forming apparatus is performed;
A representative value specifying unit for specifying a representative value of an adjustment value of impedance based on the log acquired by the log acquisition unit;
A setting unit for setting the representative value as an adjustment value of the impedance of the matching unit;
An impedance setting device comprising: The setting unit
The representative value is set as an adjustment value of the impedance of the matching device that has performed the automatic matching of the impedance.
The impedance setting device according to claim 1. The setting unit
Setting the representative value as an adjustment value of the impedance of a matching device different from the matching device that has performed the automatic matching of the impedance;
The impedance setting device according to claim 1 or 2. The impedance setting device according to any one of claims 1 to 3,
A matching unit that operates based on an impedance adjustment value set by the setting unit of the impedance setting device;
A film forming system comprising: A control method for setting an adjustment value of impedance of a matching unit that matches impedance between a high-frequency power source and a film forming chamber of a film forming apparatus,
In the film forming process by the film forming apparatus, obtaining a log indicating an impedance adjustment value when automatic impedance matching is performed between the high-frequency power source and the film forming chamber of the film forming apparatus;
Identifying a representative value of the impedance adjustment value based on the acquired log;
Setting the representative value as an adjustment value of the impedance of the matching device;
Control method. In the computer for setting the adjustment value of the impedance of the matcher that matches the impedance between the high frequency power supply and the film forming chamber of the film forming apparatus,
In the film forming process by the film forming apparatus, obtaining a log indicating an impedance adjustment value when automatic impedance matching is performed between the high-frequency power source and the film forming chamber of the film forming apparatus;
Identifying a representative value of the impedance adjustment value based on the acquired log;
Setting the representative value as an adjustment value of the impedance of the matching device;
A program that executes

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