JP2018137319A - Manufacturing method of transparent substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To easily and accurately stop a transparent base material at a predetermined position in each step of a manufacturing method of a transparent substrate including the transparent base material and a patterned conductive layer formed on a plane of the transparent base material.SOLUTION: A film layer composed of a conductive thin film layer 2 having a lower light transmittance than a thin plate glass 1, a copper layer 3, a resist layer, a black plating layer 5, or the like is formed on at least a part of the peripheral portion of the thin plate glass 1.SELECTED DRAWING: Figure 5

Description

  The present invention relates to a technique for manufacturing a transparent substrate, and more particularly, to a technique for detecting the position of the transparent substrate in each step in the manufacturing process of a transparent substrate including a transparent substrate made of thin glass, for example. .

Conventionally, in the field of electronic devices such as a touch panel and a liquid crystal display, for example, a transparent base material such as thin glass and a conductive layer made of an ITO (indium tin oxide) film formed on a plane of the transparent base material A transparent substrate provided is used.
However, since the ITO film has a relatively high electrical resistance value as an electrode material, and it is difficult to meet the demand for an increase in the size of the transparent substrate for reasons such as an increase in the display screen, in recent years, instead of the ITO film, There is an increasing demand for a transparent substrate having a conductive layer patterned by reducing the width of a metal film such as copper having excellent conductivity while ensuring transparency.

Here, in the manufacturing process of a transparent substrate provided with a conductive layer made of such a patterned metal film, the required quality is highly accurate. It is necessary to stop (position) accurately at the position.
Therefore, as a technique for realizing high-precision positioning of the transparent substrate, for example, a photo interrupter including a light projecting unit that irradiates irradiation light and a light receiving unit that detects irradiation light from the light projecting unit is used. The technique is disclosed by “Patent Document 1”.
Specifically, in the above-mentioned “Patent Document 1”, it is a technique for detecting a positional deviation of a transparent base material in a transported state, and irradiates light (optical axis) to the transported transparent base material. The photointerrupter (projecting and receiving means) is arranged so that is substantially orthogonal, and the light receiving unit detects that the irradiation light is scattered at the moment the front end of the transparent substrate crosses the irradiation light. A technique for detecting the position of a transparent substrate by detecting a sudden change in a detection signal is disclosed.

JP-A-8-31913

  However, even when the technique of “Patent Document 1” is used, in the case of a transparent substrate such as a thin glass having a thickness of 0.3 mm or less, for example, at the moment when the front end of the transparent substrate crosses the irradiation light, Even if the irradiation light is scattered abruptly, the change in the detection signal detected by the light receiving unit is insignificant, and it is not easy to detect the change in the detection signal, and the position of the transparent substrate is detected. Was difficult.

  The present invention has been made in view of the present problems described above, and is a method for producing a transparent substrate comprising a transparent substrate and a patterned conductive layer formed on the plane of the transparent substrate. An object of the present invention is to provide a method for producing a transparent substrate, which can easily and accurately stop the transparent base material at a predetermined position in each step of the production process.

  The problem to be solved by the present invention is as described above. Next, means for solving the problem will be described.

  That is, the method for producing a transparent substrate according to the present invention is a method for producing a transparent substrate comprising a transparent substrate and a patterned conductive layer formed on the plane of the transparent substrate, A film layer having a light transmittance lower than that of the material is formed on at least a part of the peripheral edge of the transparent substrate.

  By having such a configuration, for example, as described above, even with a transparent substrate made of thin glass that is difficult to detect a change in detection signal at the moment when the front end crosses the irradiation light by a photo interrupter. In addition, if a film layer formed on a part of the peripheral portion is used, it is possible to easily detect the position of the transparent base material by using a photo interrupter without having to separately provide a large-scale detection device or the like. In each step of the manufacturing process, the transparent substrate can be easily stopped at a predetermined position with high accuracy.

  In the method for producing a transparent substrate according to the present invention, it is preferable that the conductive layer and the film layer are both metal plating layers.

  By having such a configuration, when forming the metal plating layer without providing the step for forming the film layer separately from the step for forming the conductive layer, in the same step Since the film layer can be formed, it is economical.

  In the method for producing a transparent substrate according to the present invention, the metal plating layer is formed on the surface of the transparent substrate, and then the metal plating layer is removed leaving the conductive layer and the film layer. It is preferable to do this.

  By having such a configuration, the film layer can be formed in the same process without providing the process for forming the film layer separately from the process for forming the conductive layer. So it is economical.

  Moreover, in the manufacturing method of the transparent substrate which concerns on this invention, it is preferable to maintain the part formed in the whole peripheral part of the said transparent base material in the said film layer.

By having such a configuration, it is possible to plan the detected location on the transparent base material at an arbitrary position along the peripheral edge of the transparent base material when the transparent base material is detected by the photo interrupter. Therefore, in each process of the manufacturing process, the photo interrupter can be easily installed without being greatly limited by the difference in manufacturing type and equipment layout.
Moreover, since the said film layer is formed in the whole peripheral part of a transparent base material, even if it receives an impact at the edge part of a transparent base material, it becomes difficult to damage a transparent substrate.

  In the method for producing a transparent substrate according to the present invention, it is preferable that the transparent base material is made of thin glass having a thickness of 0.3 mm or less.

  When manufacturing a transparent substrate having such a configuration, the present invention can more effectively and easily stop the transparent base material at a predetermined position.

As effects of the present invention, the following effects can be obtained.
That is, according to the manufacturing method of the transparent substrate which concerns on this invention, a transparent base material can be easily stopped to a predetermined position easily in each process of a manufacturing process.

Process drawing which showed the flow of the manufacturing method of the glass substrate which concerns on embodiment of this invention. It is the figure which showed the state of the glass substrate in the middle of manufacture in each process, Comprising: (a) is the top view which showed the state of the glass substrate immediately after completion | finish of a preparation process, and the end elevation seen from the direction of arrow A, (b ) Is a plan view showing the state of the glass substrate immediately after the end of the copper layer forming step and an end view seen from the direction of arrow A. It is the figure which showed the state of the glass substrate in the middle of manufacture in each process, (a) is the end view seen from the direction of the top view and arrow A which showed the state of the glass substrate immediately after completion | finish of a resist layer formation process, (B) is the top view which showed the state of the glass substrate immediately after completion | finish of an exposure / development process, and the end elevation seen from the direction of arrow A. It is the figure which showed the state of the glass substrate in the middle of manufacture in each process, Comprising: (a) is the top view which showed the state of the glass substrate immediately after completion | finish of an etching process, and the end elevation seen from the direction of arrow A, (b ) Is a plan view showing the state of the glass substrate immediately after the end of the resist layer peeling step, and an end view seen from the direction of arrow A. It is the figure which showed the state of the glass substrate in the middle of manufacture in each process, Comprising: (a) is the top view which showed the state of the glass substrate immediately after completion | finish of a blackening process, and sectional drawing seen from the direction of arrow A, (B) is the top view which showed the state of the glass substrate just before implementation of a cutting process, and the end elevation seen from the direction of arrow A.

  Next, an embodiment embodying the present invention will be described with reference to FIGS.

[Flow of Manufacturing Process S100]
First, the overall flow of the manufacturing process S100 realized by the present embodiment will be described with reference to FIG.
In addition, although this embodiment has shown the manufacturing process flow of a metal mesh type touch panel as an example, it is applicable also to the manufacturing process of other products, such as a display, an interposer, and an electromagnetic shielding board.

The manufacturing process S100 in the present embodiment is a process for manufacturing a glass substrate G (see FIG. 5B), which is an example of a transparent substrate, by a so-called photolithography method.
The manufacturing process S100 includes a preparatory process S101, an underlayer formation process S102, a copper layer formation process S103, a resist layer formation process S104, an exposure / development process S105, an etching process S106, a resist layer peeling process S107, which are mainly performed with time. It is constituted by a blackening treatment step S108, a cutting step S109, and the like.

The preparation step S101 is a step of preparing a transparent base material that is a base portion of a transparent substrate, and in the present embodiment, for example, a thin glass 1 having a thickness of 0.3 mm or less (see, for example, FIG. 2A) Is prepared as a transparent substrate.
Specifically, in this step, the roll-shaped long strip-shaped thin glass sheet 1 is cut into a sheet having a predetermined outer size.
And the cut | disconnected sheet glass 1 is conveyed by the conveying means which is not shown to the foundation | substrate layer preparation process S102 which is the next process.

In addition, it is preferable that the thin glass 1 is 0.05 mm-0.3 mm in thickness, and it is more preferable that it is 0.1 mm-0.2 mm.
The material for forming the transparent substrate is not particularly limited, and may be an insulator film that transmits visible light.

The underlayer forming step S102 is a step of forming a conductive thin film layer that becomes a plating underlayer on the plane of the prepared thin glass 1.
Specifically, in this step, the thin glass 1 carried in from the above-mentioned preparation step S101 is degreased to remove the fat adhering to the flat surface, and then the thin glass 1 is subjected to electroless nickel plating treatment. Then, a uniform black conductive thin film layer 2 (for example, see (b) in FIG. 2) is formed on the entire plane.
Here, the plane refers to both main surfaces 1a and 1b of the thin glass plate 1 and end surfaces 1c connected to the both main surfaces 1a and 1b (see FIG. 2A).
Thereby, electroconductivity is added with respect to the thin glass 1 which is an electrical insulator which does not have electroconductivity, and the electroplating process in later copper layer formation process S103 is attained.

  Thereafter, the thin glass plate 1 that has been subjected to electroless nickel plating is subjected to heat treatment, then stored in a transport cassette (not shown), and transported to the next copper layer forming step S103 by a transport means.

Copper layer formation process S103 is a process of forming the copper layer 3 (for example, refer FIG.2 (b)) used as a conductive layer on the conductive thin film layer 2 formed in the sheet glass 1. FIG.
Specifically, in this step, the thin glass 1 carried in from the above-mentioned underlayer forming step S102 is degreased to remove the fat adhering to the conductive thin film layer 2, and then the thin glass 1 On the other hand, an electroplating process is performed to form a uniform copper layer 3 over the entire conductive thin film layer 2.
Note that the plating method is used in the base layer forming step S102 and the copper layer forming step S103, but a sputtering method can also be applied. The plating method is preferably used because it can be easily formed on the end face 1c, can be formed in a short time, and film defects are less likely to occur.

  Thereafter, the thin glass sheet 1 subjected to the electroplating process is subjected to a dustproof process, and then stored in a transport cassette (not shown), and is transported to the next resist layer forming step S104 by a transport unit.

The resist layer forming step S104 is a step of forming a resist layer 4 (see, for example, FIG. 3A) on the copper layer 3 formed on the conductive thin film layer 2 of the thin glass 1.
Specifically, in this process, after the thin glass 1 carried in from the above-mentioned copper layer forming process S103 is washed with pure water or the like to remove dust and the like adhering on the copper layer 3, the copper layer A photosensitive resist is applied over the entire plane 3.

Thereafter, pre-baking is performed, and the resist applied to the thin glass plate 1 is heated and solidified to form the resist layer 4 in close contact with the thin glass plate 1.
Thus, the thin glass 1 on which the resist layer 4 is formed is transported to the next exposure / development step S105 by a transport means (not shown).

The resist material for forming the resist layer 4 includes, for example, a liquid photoresist manufactured by Tokyo Ohka Kogyo Co., Ltd., but instead of such a coating type, a sheet-like dry film or ink type may be used. Good.
Moreover, about the heating temperature at the time of prebaking, it is preferable that it is 70 to 150 degreeC, and it is more preferable that it is 80 to 120 degreeC.

In the exposure / development step S105, the resist layer 4 formed on the copper layer 3 of the thin glass 1 is exposed through a photomask (not shown) on which a predetermined pattern is formed (exposure step), and the pattern This is a step of removing a part of the resist layer 4 (developing step).
Specifically, in this step, the thin glass 1 carried in from the resist layer forming step S104 is irradiated with light such as ultraviolet rays for a predetermined time through the photomask, and then the thin glass 1 Is immersed in a developer.
As a result, a portion of the resist layer 4 exposed to light such as ultraviolet rays according to the pattern (photosensitive portion 4a; see FIG. 3B) is dissolved and removed by the developer.

Thereafter, in a state where the photosensitive portion 4a is completely dissolved, the thin glass plate 1 is taken out from the developer, and the thin glass plate 1 is washed away (rinsed) with pure water or the like.
Then, post-baking is performed to remove water droplets and the like adhering to the thin glass plate 1 by heating, and the bonding state between the thin glass plate 1 and the portion other than the photosensitive portion 4a in the resist layer 4 is made stronger.
As a result, in the copper layer 3, the portion removed by the subsequent etching step S <b> 106 is completely exposed to the outside, while the portion that is maintained without being removed is protected by the resist layer 4. It becomes.

  Thereafter, the thin glass 1 from which a part of the resist layer 4 (that is, the photosensitive portion 4a) has been removed is housed in a transport cassette (not shown) and transported to the next etching step S106 by a transport means.

In addition, as a kind of developing solution, sodium carbonate aqueous solution, tetramethylammonium hydroxide aqueous solution, potassium hydroxide aqueous solution etc. are mentioned, for example.
Moreover, about the heating temperature at the time of post-baking, it is preferable that it is 100 to 200 degreeC.

The etching step S106 is a step of removing a portion of the copper layer 3 exposed to the outside by removing a part of the resist layer 4 (exposed portion 3a; see FIG. 4A) by etching.
Specifically, in this step, the thin glass 1 carried in from the exposure / development step S105 described above is immersed in an etching solution.
Thereby, the exposed portion 3a of the copper layer 3, that is, the portion of the resist layer 4 in the same range as the photosensitive portion 4a is dissolved and removed by the etching solution.
In other words, the copper layer 3 is patterned according to the shape of the photomask described above.

Thereafter, in a state where the exposed portion 3a is completely dissolved, the thin glass 1 is taken out of the etching solution, washed with pure water or the like, and then dried by blowing hot air or the like.
Thus, the thin glass 1 from which a part of the copper layer 3 (that is, the exposed portion 3a) has been removed is housed in a transport cassette (not shown) and transported to the next resist layer peeling step S107 by the transport means. .

Examples of the etchant include hydrofluoric acid aqueous solution, nitric acid aqueous solution, hydrochloric acid aqueous solution, ferric chloride aqueous solution, oxalic acid aqueous solution, and a mixed solution thereof.
The etching method is not limited to wet etching immersed in an etching solution as shown in the present embodiment. For example, the etching solution is applied to a predetermined place by a brush, a brush, a roller, a spray, or the like. You may use the method of apply | coating, and the dry etching method of etching in plasma, such as a fluorine-containing compound (for example, carbon tetrafluoride).

In the resist layer peeling step S107, the resist layer 4 remaining on the copper layer 3 is removed, and a portion other than the exposed portion 3a in the copper layer 3 (remaining portion 3b, see FIG. 4B) is exposed to the outside. It is a process.
Specifically, in this step, the thin glass 1 carried in from the above-described etching step S106 is immersed in a resist stripping solution.
As a result, the remaining resist layer 4 is dissolved and removed by the resist stripping solution, and the remaining portion 3b of the copper layer 3, that is, the portion patterned by the above-described photomask in the copper layer 3 is exposed to the outside. It will be in the state.

Thereafter, in a state where the resist layer 4 is completely dissolved, the thin glass 1 is taken out from the resist stripping solution, washed with pure water or the like, and then dried by blowing hot air or the like.
In this way, the thin glass plate 1 with the remaining portion 3b completely exposed to the outside is stored in a transport cassette (not shown) and transported to the next blackening treatment step S108 by the transport means.

  In addition, as a kind of resist stripping solution, sodium hydroxide aqueous solution etc. are mentioned, for example.

The blackening treatment step S108 is a step of performing blackening treatment on the remaining portion 3b of the copper layer 3 exposed to the outside.
Specifically, in this step, the thin glass 1 carried in from the resist layer peeling step S107 described above is degreased to remove the fat adhering to the remaining portion 3b of the copper layer 3, and then the thin glass 1 Then, an electroplating process is performed to form a black plating layer 5 such as chromium on the remaining portion 3b.
Thereby, it becomes possible to conceal the gloss peculiar to the metal from the remaining portion 3b of the copper layer 3. For example, even when the glass substrate G as the final product is used for a touch panel, a liquid crystal display, or the like. Further, unnecessary light such as external light is not reflected on the glass substrate G, and the contrast of the fluoroscopic image is not lowered.

Thereafter, the thin glass plate 1 on which the black plating layer 5 is formed is washed with pure water or the like, and then dried by blowing hot air or the like.
In this way, the thin glass plate 1 that has been subjected to the blackening process is housed in a transport cassette (not shown), and is transported to the next cutting step S109 by the transport means.

  As a blackening treatment method, for example, an oxidation treatment may be performed using an aqueous solution of sodium chlorite, sodium hydroxide, trisodium phosphate, or the like to form a CuO film.

The cutting step S109 is a step of obtaining the glass substrate G as a final product by cutting the thin glass 1 subjected to the blackening process into a predetermined outer size.
Specifically, in this step, the thin glass plate 1 carried in from the blackening treatment step S108 described above is adsorbed and held on a work table of a cutting device (not shown), for example, and predetermined using an ultrasonic cutter or the like. After cutting into the outer size, the substrate is washed with pure water or the like.
Thus, a glass substrate GG including the thin glass 1 and the patterned copper layer 3 formed on the flat surface of the thin glass 1 has a predetermined outer size from the single thin glass 1. Is manufactured in multiple.

  The manufactured glass substrate G is then housed in a transport cassette (not shown) and sent to another manufacturing process, where electrical operation confirmation and bonding with another substrate are performed.

[State of thin glass 1 during production in each step]
Next, the state of the thin glass 1 in the middle of manufacturing in each process when the glass substrate G is manufactured based on the manufacturing process S100 will be described with reference to FIGS.

First, as shown in FIG. 2A, the roll-formed thin glass sheet 1 is cut into a rectangular sheet shape in the preparation step S101 and sent to the underlayer forming step S102.
The thin glass 1 sent to the underlayer forming step S102 is subjected to electroless plating, and the conductive thin film layer 2 is formed on the entire plane (in this embodiment, the main surfaces 1a and 1b and the end surface 1c). .
And the thin glass 1 in which the electroconductive thin film layer 2 was formed is accommodated in the conveyance cassette which is not shown in figure, and is sent to copper layer formation process S103.

Here, when the thin glass 1 is stored in the transport cassette, it is necessary to position the thin glass 1 with respect to the transport cassette based on a predetermined stop position accuracy.
On the other hand, as described above, the thin glass 1 that is a transparent substrate is already provided with the conductive thin film layer 2 having a lower light transmittance than the thin glass 1 over the entire plane.

  For this reason, in the present embodiment, for example, the thin glass 1 is formed by a photo interrupter (not shown) including a light projecting unit that irradiates irradiation light and a light receiving unit that detects irradiation light from the light projecting unit. The sheet glass 1 is easily detected at a predetermined position with respect to the transport cassette.

The thin glass sheet 1 sent to the copper layer forming step S103 is subjected to an electroplating process, and as shown in FIG. 2B, the copper layer 3 in the entire plane (that is, the entire plane on the conductive thin film layer 2). Is formed.
And the thin glass 1 in which the copper layer 3 was formed is accommodated in the conveyance cassette which is not shown in figure, and is sent to resist layer formation process S104.

  Here, similarly to the conductive thin film layer 2 described above, the copper layer 3 also has a lower light transmittance than the thin glass plate 1, so that the position of the thin glass plate 1 can be easily detected using a photo interrupter. Is possible.

  For this reason, in the present embodiment, when the thin glass 1 is stored in the transport cassette in the copper layer forming step S103, the position of the thin glass 1 is easily detected by the photo interrupter and The thin glass 1 is to be accurately stopped at a predetermined position.

The thin glass 1 sent to the resist layer forming step S104 is coated with a resist using an apparatus such as a spin coater, for example, and as shown in FIG. 3A, the entire plane (ie, a plane on the copper layer 3). The resist layer 4 is formed in the whole).
And the thin glass 1 in which the resist layer 4 was formed is heat-processed by prebaking.

Here, when performing prebaking, it is necessary to position the thin glass 1 based on predetermined stop position accuracy.
On the other hand, as described above, the resist layer 4 having a lower light transmittance than the thin glass 1 is already formed on the copper layer 3 of the thin glass 1 over the entire plane.

  For this reason, in the present embodiment, the position of the thin glass plate 1 is easily detected by a photo interrupter (not shown), and the thin glass plate 1 is accurately stopped at a predetermined position.

The thin glass plate 1 on which the resist layer 4 is formed is then transported to the exposure / development step S105 by a transport means (not shown).
Then, the thin glass plate 1 sent to the exposure / development step S105 is exposed to light such as ultraviolet rays through a photomask, and then subjected to heat treatment by post-baking, as shown in FIG. As described above, a part of the resist layer 4 (photosensitive portion 4a) is removed.
Thereafter, the thin glass 1 from which a part of the resist layer 4 has been removed is stored in a transport cassette (not shown) and sent to the etching step S106.

Here, when performing exposure of light such as ultraviolet rays or post baking, and when storing in a transport cassette, it is necessary to position the thin glass 1 each time based on a predetermined stop position accuracy.
On the other hand, in the case where a part of the resist layer 4 is removed in this step (exposure / development step S105), in the past, the portion finally required as a conductive layer (that is, the final portion in the central portion of the thin glass 1) When the resist layer 4 in all regions except for the glass substrate G which is a product has been removed, in this embodiment, at least a part of the peripheral edge of the thin glass plate 1 (in this embodiment). In this case, the resist layer 4 is intentionally left (see the peripheral edge 4b of the resist layer 4 in FIG. 3B).

  For this reason, in the present embodiment, the position of the thin glass plate 1 can be easily grasped by detecting an arbitrary position in the peripheral edge portion 4b of the resist layer 4 by a photo interrupter (not shown). This is possible, and the thin glass plate 1 can be accurately stopped at a predetermined position.

The thin glass plate 1 sent to the etching step S106 is subjected to wet etching, and then subjected to cleaning treatment and drying treatment in this order, so that a part of the copper layer 3 ( The photosensitive part 4a) is removed.
Thereafter, the thin glass 1 from which a part of the copper layer 3 has been removed is stored in a transport cassette (not shown) and sent to the resist layer peeling step S107.

Here, in the case of performing wet etching, cleaning processing, drying processing, and storing in a transport cassette, it is necessary to position the thin glass 1 each time based on a predetermined stop position accuracy.
On the other hand, in the present embodiment, as described above, a part of the resist layer 4 (peripheral part 4b) is intentionally left at the peripheral part of the thin glass plate 1, so that this process (etching process S106) is performed. A part of the copper layer 3 formed on the peripheral edge of the thin glass plate 1 (see the peripheral edge 3c of the copper layer 3 in FIG. 4A) is not removed, and the peripheral edge 4b of the resist layer 4 is removed. Will be maintained.

  For this reason, in the present embodiment, a photo interrupter (not shown) detects an arbitrary location in the peripheral portion 4b of the resist layer 4 that is maintained together with the peripheral portion 3c of the copper layer 3, The position of the thin glass 1 can be easily grasped, and the thin glass 1 can be accurately stopped at a predetermined position.

As shown in FIG. 4B, the thin glass 1 sent to the resist layer peeling step S107 is immersed in a resist peeling solution and subjected to a peeling process, and then subjected to a cleaning process and a drying process in this order. All the remaining resist layers 4 are removed.
Thereafter, the thin glass 1 from which the resist layer 4 has been removed is housed in a transport cassette (not shown) and sent to the blackening treatment step S108.

Here, when performing the peeling process of the resist layer 4, a washing process, a drying process, and when storing in a conveyance cassette, it is necessary to position the thin glass 1 each time based on predetermined stop position accuracy.
On the other hand, in this embodiment, even if all the remaining resist layers 4 are removed by this step (resist layer peeling step S107), a part of the copper layer 3 (periphery) is still present on the peripheral portion of the thin glass 1. Part 3c) will be maintained.

  For this reason, in the present embodiment, the position of the thin glass plate 1 can be easily grasped by detecting any location in the peripheral edge portion 3c of the copper layer 3 by a photo interrupter (not shown). This is possible, and the thin glass plate 1 can be accurately stopped at a predetermined position.

The thin glass 1 sent to the blackening treatment step S108 is subjected to a degreasing treatment, a blackening treatment, a washing treatment, and a drying treatment in this order, so that the remaining portion of the copper layer 3 is obtained as shown in FIG. A black plating layer 5 is formed on 3b.
Then, the thin glass 1 in which the black plating layer 5 was formed is accommodated in the conveyance cassette which is not shown in figure, and is sent to cutting process S109.

Here, when performing a degreasing process, a blackening process, a cleaning process, a drying process, and when storing in a conveyance cassette, it is necessary to position the thin glass 1 each time based on predetermined stop position accuracy.
On the other hand, in the present embodiment, as described above, the peripheral edge portion 3c of the copper layer 3 is maintained at the peripheral edge portion of the thin glass plate 1, so that the light on the peripheral edge portion 3c is lighter than that of the thin glass plate 1. Therefore, it is possible to form the black plating layer 5 having a low transmittance.

  For this reason, in the present embodiment, the position of the thin glass plate 1 can be easily grasped by detecting an arbitrary portion in the black plating layer 5 at the peripheral portion by a photo interrupter (not shown). This is possible, and the thin glass plate 1 can be accurately stopped at a predetermined position.

The thin glass sheet 1 sent to the cutting step S109 is cut along a virtual cutting line L by a cutting device (not shown), and then subjected to a cleaning process and a drying process in this order, so that FIG. As shown in FIG. 3, the glass substrate is divided into a plurality of glass substrates G, G.
After that, the plurality of divided glass substrates G, G,... Are housed in a transport cassette (not shown), and as described above, to another manufacturing process in which electrical operation confirmation and bonding with other substrates are performed. Sent.

Here, when performing the cutting process with respect to the thin glass 1, it is necessary to position the thin glass 1 with respect to the said cutting device based on predetermined stop position accuracy.
On the other hand, in the present embodiment, as described above, if the cutting process has not yet been performed (that is, the state immediately after finishing the blackening process step S108 described above), the peripheral edge of the thin glass 1 is formed. The peripheral edge portion 3c of the copper layer 3 that has been subjected to the blackening treatment is still maintained.

  For this reason, in this embodiment, a thin glass sheet is detected by detecting an arbitrary position in the black plating layer 5 formed on the peripheral edge portion 3c of the copper layer 3 by a photo interrupter (not shown). 1 can be easily grasped, and the thin glass 1 can be accurately stopped at a predetermined position with respect to the cutting device.

  As described above, the manufacturing process S100 of the present embodiment is a film layer composed of the conductive thin film layer 2, the copper layer 3, the resist layer 4, the black plating layer 5 or the like having a light transmittance lower than that of the thin glass plate 1. Is to maintain a portion formed on at least a part of the peripheral edge of the thin glass plate 1.

  As a result, for example, even if the thin glass 1 is difficult to detect the change in the detection signal at the moment when the front end crosses the irradiation light by the photo interrupter, these film layers formed on a part of the peripheral edge If (the conductive thin film layer 2, the copper layer 3, the resist layer 4, or the black plating layer 5) is used, there is no need to separately provide a large-scale detection device or the like, and the position of the thin glass 1 can be easily achieved by a photo interrupter. In each step of the manufacturing process, the thin glass 1 can be easily stopped at a predetermined position with high accuracy.

  Moreover, in manufacturing process S100 of this embodiment, as above-mentioned, a conductive layer and a film layer are comprised by the metal plating layer which consists of the electroconductive thin film layer 2, the copper layer 3, or the black plating layer 5 at least. It is said.

  By having such a configuration, the process for forming the film layer is not provided separately from the process for forming the conductive layer, and the same process is performed when these metal plating layers are formed. It is economical because the film layer can be formed at.

  Moreover, in the manufacturing process S100 of the present embodiment, after the metal plating layer is formed on the entire flat surface of the thin glass 1, as mainly performed in the base layer forming process S102 and the copper layer forming process S103, In the etching step S106, the metal plating layer is removed leaving the conductive layer and the film layer.

  By having such a configuration, the film layer can be formed in the same process without providing the process for forming the film layer separately from the process for forming the conductive layer. So it is economical.

  Furthermore, in the manufacturing process S100 of the present embodiment, the film layer is formed on the entire peripheral edge of the thin glass 1 in particular.

By having such a configuration, for example, the detection location in the thin glass 1 when the thin glass 1 is detected by a photo interrupter is planned at an arbitrary position along the peripheral edge of the thin glass 1. Therefore, in each process of the manufacturing process, the photo interrupter can be easily installed without much restrictions on the equipment layout.
Moreover, since the said film layer is formed in the whole peripheral part of the sheet glass 1, even if it receives an impact at the edge part of the sheet glass 1, it becomes difficult to damage a transparent substrate.

1 Thin glass (transparent substrate)
2 Conductive thin film layer (metal plating layer)
3 Copper layer (conductive layer)
4 Resist layer 5 Black plating layer (metal plating layer)
G Glass substrate (transparent substrate)

Claims (5)

A transparent substrate;
A method for producing a transparent substrate comprising a patterned conductive layer formed on a plane of the transparent substrate,
A film layer having a low light transmittance compared to the transparent substrate is formed on at least a part of the peripheral edge of the transparent substrate.
A method for producing a transparent substrate. The conductive layer and the film layer are both metal plating layers.
The method for producing a transparent substrate according to claim 1, wherein: After forming the metal plating layer on the surface of the transparent substrate, remove the metal plating layer leaving the conductive layer and the film layer,
The method for producing a transparent substrate according to claim 2, wherein: The membrane layer,
Forming the entire periphery of the transparent substrate;
The manufacturing method of the transparent substrate as described in any one of Claims 1-3 characterized by the above-mentioned. The transparent substrate is made of thin glass having a thickness of 0.3 mm or less,
The manufacturing method of the transparent substrate as described in any one of Claims 1-4 characterized by the above-mentioned.

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