JP2018118219A - Gas treatment device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a gas treatment device where gas treatment capacity is stabilized by keeping humidity environment in a honeycomb structure constant and a person in a room does not feel discomfort caused by increasing air humidity after plasma treatment.SOLUTION: In a gas treatment device: the flow rate of a treated gas E supplied to a mixing section 2 is controlled by a mixing controlling unit 6 so that first absolute humidity (absolute humidity of a mixing treating object gas D) hF becomes a target value hsp (a mixing ratio M of a first gas G1 (treating object gas C) to a second gas G2 (treated gas E) in the mixing section 2 is controlled); and a voltage V applied between electrodes in a plasma treatment section 3 is controlled by an applied voltage controlling unit 7 so that a difference Δh between the first absolute humidity (absolute humidity of the mixing treating object gas D) hF and second absolute humidity (absolute humidity of the treated gas E) hR enters in a reference humidity difference range ΔhB±α.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a gas processing apparatus that purifies a processing target gas.

  2. Description of the Related Art Conventionally, a technique for purifying exhaust gas by generating a plasma state by performing high voltage discharge in the exhaust gas is known. In recent years, this technology is being applied to a purification device for purifying factory exhaust and an air purifier for purifying indoor air for the purpose of deodorization.

  Plasma that is in a thermally non-equilibrium state, that is, in which the electron temperature is much higher than the temperature of the gas or ion (non-equilibrium plasma (hereinafter simply referred to as plasma)) is the ion or radical produced by electron collision. Promotes a chemical reaction that does not occur at room temperature, and is considered useful in hazardous gas treatment as a medium that can efficiently remove or decompose harmful gases. What is important in the practical application of this technology is to improve the energy efficiency during processing, and to convert it into a completely safe product after processing with plasma.

In general, plasma at atmospheric pressure is generated by gas discharge or electron beam. Currently considered for application are nitrogen oxides (NOx), sulfur oxides (SOx), chlorofluorocarbons, carbon dioxide (CO ₂ ) Volatile organic solvent (VOC). Above all, NOx is contained in the exhaust gas of a car, so that it needs to be put into practical use immediately.

  As a gas treatment apparatus for purifying this kind of gas to be treated, a honeycomb structure having a large number of through holes is disposed in a ventilation passage, and a high voltage is applied between electrodes disposed at both ends of the honeycomb structure. There is a type that generates plasma in the through hole of the structure. In this gas processing apparatus, the harmful gas contained in the gas to be processed that passes through the through holes is decomposed into harmless substances by the plasma generated in the through holes of the honeycomb structure (for example, Patent Document 1). reference).

  In this type of gas processing apparatus, a technique for generating uniform plasma as a whole in the honeycomb structure has not been established, and the gas processing capacity becomes unstable. On the other hand, the plasma generation state inside the honeycomb structure has a characteristic that it is performed more actively as the moisture in the gas to be processed increases, and is suppressed when the moisture is lower. That is, there is a characteristic that the gas processing capacity increases as the water content in the gas to be processed increases, and the gas processing capacity decreases as the water content decreases.

  Therefore, in Patent Document 2, moisture is sent to the space between the electrode and the honeycomb structure by a humidifier to increase the moisture concentration in the gas to be processed and activate the plasma discharge to increase the gas processing capacity. A gas processing apparatus is disclosed.

JP 2000-140562 A JP 2004-089708 A

  However, the technique disclosed in Patent Document 2 does not control the amount of moisture fed by the humidifier, so if the amount of moisture supplied is too small, the generation of plasma discharge is insufficient and the gas processing capacity is insufficient. There is a possibility that the by-product is generated without completely decomposing the treated substance. If the amount of water to be supplied is excessive, the gas processing capability is increased, but the discharge becomes intense, and there is a possibility that abnormal discharge such as spark discharge occurs. In addition, when the plasma-treated air is supplied to the room, the humidity of the air supplied to the room becomes high, which causes a problem that people in the room feel uncomfortable.

The present invention has been made to solve such a problem, and the object of the present invention is to provide a gas treatment capable of maintaining a constant humidity environment in the honeycomb structure and stabilizing the gas treatment capacity. To provide an apparatus.
It is another object of the present invention to provide a gas processing apparatus that does not cause uncomfortable feelings to a person in the room due to high humidity of air after plasma processing.

  In order to achieve such an object, the present invention is arranged in a ventilation path (A) in a gas processing device (100) configured to purify a processing target gas and output it as a processed gas. The water treatment unit (1) configured to humidify the flowing treatment target gas, and the treatment target gas provided at the downstream side of the ventilation path from the water treatment unit and humidified by the water treatment unit is the first gas. Mixing configured to adjust the humidity by mixing the first gas and the second gas with the gas to be treated or the gas that has been treated before being humidified by the water treatment unit as the second gas A honeycomb structure having a part (2) and a large number of through holes (31a) that are provided downstream of the mixing part and that pass through the gas to be processed whose humidity has been adjusted in the mixing part as the gas to be mixed Body (31), And electrodes (32, 33) disposed on the upstream side and the downstream side of the honeycomb structure with respect to the direction in which the gas to be mixed passes, and the honeycomb structure is penetrated by the voltage applied between the electrodes. A plasma processing unit (3) configured to generate plasma in the hole, and a first configured to measure the absolute humidity of the gas to be mixed toward the plasma processing unit from the mixing unit as the first absolute humidity. The second humidity configured to measure the absolute humidity of the processed gas as the second absolute humidity, with the humidity measurement unit (S1) and the mixed processing target gas that has passed through the plasma processing unit as the processed gas A measurement unit (S2) and a mixing ratio control unit (6) configured to control the mixing ratio of the first gas and the second gas in the mixing unit so that the first absolute humidity becomes a target value. And the first absolute And an applied voltage control unit (7) configured to control a voltage applied to the plasma processing unit so that a difference between the humidity and the second absolute humidity falls within a predetermined humidity difference range. And

  In the present invention, the first humidity measuring unit measures the absolute humidity of the gas to be mixed from the mixing unit toward the plasma processing unit as the first absolute humidity (hF), and the second humidity control unit is configured to perform the plasma processing. The absolute humidity of the mixed processing target gas (processed gas) that has passed through the section is measured as the second absolute humidity (hR). The mixing ratio control unit includes a first gas (processing target gas humidified by the water treatment unit) and a second gas (water treatment unit) such that the first absolute humidity (hF) becomes the target value (hsp). To control the mixing ratio (M) with the gas to be treated or gas before being humidified. Thereby, the absolute humidity (hF) of the gas to be mixed from the mixing section toward the plasma processing section is set to the target value (hsp), and the gas to be mixed having the absolute humidity (hF) set to the target value (hsp) It is sent to the plasma processing unit.

On the other hand, the applied voltage control unit causes the difference (Δh = hF−hR) between the first absolute humidity (hF) and the second absolute humidity (hR) to fall within a predetermined humidity difference range (ΔhB ± α). In addition, the voltage (V) applied between the electrodes of the plasma processing unit is controlled.
For example, when the difference (Δh) between the first absolute humidity (hF) and the second absolute humidity (hR) is large and out of a predetermined humidity difference range (Δh> ΔhB + α), mixing in the plasma processing unit The voltage (V) applied between the electrodes of the plasma processing unit is controlled so as to suppress the gas processing capacity for the processing target gas. When the gas processing capacity is suppressed, the water consumption in the plasma processing unit is reduced, the second absolute humidity (hR) is increased, and the first absolute humidity (hF) and the second absolute humidity (hR) are increased. So that the difference (Δh) between the first absolute humidity (hF) and the second absolute humidity (hR) falls within a predetermined humidity difference range (ΔhB ± α). Become.
For example, when the difference (Δh) between the first absolute humidity (hF) and the second absolute humidity (hR) is small and outside a predetermined humidity difference range (Δh <ΔhB−α), The voltage (V) applied between the electrodes of the plasma processing unit is controlled so as to increase the gas processing capacity for the gas to be mixed. When the gas processing capacity is increased, the amount of water consumption in the plasma processing unit increases, the second absolute humidity (hR) decreases, and the first absolute humidity (hF) and the second absolute humidity (hR) And the difference (Δh) between the first absolute humidity (hF) and the second absolute humidity (hR) falls within a predetermined humidity difference range (ΔhB ± α). .

  Thus, in the present invention, the mixing ratio (M) of the first gas and the second gas is controlled so that the first absolute humidity (hF) becomes the target value (hsp), and the first Voltage (V) applied between the electrodes of the plasma processing unit so that the difference (Δh) between the absolute humidity (hF) and the second absolute humidity (hR) falls within a predetermined humidity difference range (ΔhB ± α). Is controlled. Thereby, the humidity environment in the honeycomb structure is kept constant, and the gas processing capacity is stabilized. In addition, there is no problem that the humidity of the air after the plasma treatment becomes high and makes people in the room feel uncomfortable.

  In the above description, as an example, constituent elements on the drawing corresponding to the constituent elements of the invention are indicated by reference numerals with parentheses.

  As described above, according to the present invention, the mixing ratio of the first gas and the second gas in the mixing unit is controlled so that the first absolute humidity becomes the target value, and the first absolute humidity and Since the voltage applied between the electrodes of the plasma processing unit is controlled so that the difference from the second absolute humidity falls within a predetermined humidity difference range, the humidity environment in the honeycomb structure is kept constant, It becomes possible to stabilize the processing capacity. In addition, there is no problem that the humidity of the air after the plasma treatment becomes high and makes people in the room feel uncomfortable.

FIG. 1 is a diagram showing a main part of a gas processing apparatus according to an embodiment of the present invention. FIG. 2 is a schematic view showing the configuration of the scrubber unit in this gas processing apparatus. FIG. 3 is a schematic diagram showing the configuration of the plasma processing unit in this gas processing apparatus. FIG. 4 is a diagram showing an outline of the hardware configuration of the control device in this gas processing apparatus. FIG. 5 is a flowchart for explaining the processing operation (processing operation performed by the mixing control unit) executed by the CPU of the control device. FIG. 6 is a flowchart for explaining a processing operation (a processing operation performed by the applied voltage control unit) executed by the CPU of the control device. FIG. 7A is a diagram illustrating a state where the difference Δh between the first absolute humidity hF and the second absolute humidity hR is large and is out of the reference humidity difference range ΔhB ± α (Δh> ΔhB + α). FIG. 7B is a diagram showing a state where the difference Δh between the first absolute humidity hF and the second absolute humidity hR is in the reference humidity difference range ΔhB ± α. FIG. 8A is a diagram showing a state where the difference Δh between the first absolute humidity hF and the second absolute humidity hR is small and out of the reference humidity difference range ΔhB ± α (Δh <ΔhB−α). FIG. 8B is a diagram illustrating a state where the difference Δh between the first absolute humidity hF and the second absolute humidity hR is within the reference humidity difference range ΔhB ± α. FIG. 9 is a functional block diagram of a main part of the mixing control unit. FIG. 10 is a functional block diagram of the main part of the applied voltage control unit. FIG. 11 is a diagram illustrating an example in which the gas to be processed before being humidified by the scrubber unit is supplied to the mixing unit as the second gas.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a view showing a main part of a gas processing apparatus 100 according to an embodiment of the present invention.

  The gas processing apparatus 100 includes a scrubber unit (water processing unit) 1, a mixing unit (mixing unit) 2, a plasma processing unit 3, and a flow rate of the processed gas E supplied to the mixing unit 2. And a control device 4 for controlling a voltage (hereinafter also referred to as an applied voltage) V applied between the electrodes of the plasma processing unit 3.

  In the gas processing apparatus 100, a duct A1 is connected to the ventilation path A. The duct A <b> 1 is a duct extending from the downstream side of the plasma processing unit 3 to the mixing unit 2, and plays a role of returning a part of the processed gas E to the mixing unit 2. The duct A1 is provided with an air supply valve 5 for adjusting the flow rate of the processed gas E returned to the mixing unit 2.

  In the gas processing apparatus 100, the scrubber unit 1 humidifies the processing target gas B flowing through the ventilation path A. The mixing unit 2 is provided on the downstream side of the ventilation path A with respect to the scrubber unit 1. The processing target gas C humidified by the scrubber unit 1 is the first gas G1, and the processed gas E through the duct A1 is the second gas. The humidity is adjusted by mixing the first gas G1 and the second gas G2 with the gas G2. The plasma processing unit 3 is provided on the downstream side of the ventilation path A with respect to the mixing unit 2 and inputs the processing target gas whose humidity has been adjusted in the mixing unit 2 as the mixing processing target gas D, and this input mixing processing The target gas D is purified to a treated gas E.

  Further, in the gas processing apparatus 100, the absolute humidity of the mixed processing target gas D from the mixing unit 2 toward the plasma processing unit 3 is set to the first absolute value in the ventilation path A between the mixing unit 2 and the plasma processing unit 3. A humidity sensor S1 that measures the humidity hF is provided. In addition, a humidity sensor S2 that measures the absolute humidity of the treated gas E that has passed through the plasma processing unit 3 as the second absolute humidity hR is provided in the ventilation path A on the downstream side of the plasma processing unit 3.

The toxic gas contained in the gas B to be treated includes nitrogen oxide (NOx), sulfur oxide (SOx), chlorofluorocarbon, carbon dioxide (CO ₂ ). Volatile organic solvent (VOC). In addition, the dust contained in the processing target gas B includes inorganic dust such as metal powder and rock powder, and organic dust such as cotton dust. In the present invention, soot generated due to combustion of objects, exhaust gas from automobiles, etc. Particulate matter contained in the gas is also included in the dust.

  FIG. 2 is a schematic view showing the configuration of the scrubber unit 1 in the gas processing apparatus 100. As shown in FIG. 2, the inside of the tank 11 of the scrubber unit 1 is partitioned by a partition plate 12 into two spaces 13-1 and 13-2 in a state where the lower part communicates. In one space 13-1, the filler 14 is supported by the inner wall 11 a of the tank 11 and the partition plate 12, and the spraying unit 15 that sprays water in a mist toward the filler 14 above the filler 14. Is provided.

  Further, the tank 11 at a position above the spraying unit 15 is provided with an exhaust port 16 for exhausting the processing target gas C having passed through the filler 14 and having a relative humidity of 100% to the ventilation path A. In addition, the tank 11 that forms the other space 13-2 with respect to the space 13-1 in which the filler 14 is supported is provided with an intake port 17 that is connected to the ventilation path A and sucks the processing target gas B. ing. Moreover, the filler 14 is comprised by resin, such as polyester and polypropylene processed into the fiber form, and the space | gap is formed between fibrous resins.

  A water tank 18 that stores water is provided at the bottom of the tank 11, and a pump 19 that pumps water from the water tank 18 to the spraying unit 15 is provided for the water tank 18. A drain hose 20 is connected to the bottom surface of the water tank 18, and a drain valve 21 is provided on the drain hose 20. The tank 11 is provided with a water supply port 22, and a water supply hose 23 is connected to the water supply port 22.

  The water stored in the water tank 18 is used as circulating water, pumped up by the pump 19 and sprayed by the spraying unit 15. When it is necessary to replace the circulating water due to dirt or the like, the drain valve 21 is opened to drain water from the drain hose 20, and new water is supplied from the water inlet 22 to which the water hose 23 is connected.

  In the scrubber unit 1 configured in this way, the processing target gas B fed into the tank 11 from the intake port 17 is sprayed from the spraying unit 15 when rising through the gap in the filler 14. In contact with water and gas-liquid. In the present embodiment, the processing target gas B is brought into gas-liquid contact with water, so that the relative humidity of the processing target gas B that has flowed is set to 100%. The processing target gas C having a relative humidity of 100% is exhausted from the exhaust port 16 of the scrubber unit 1.

  The mixing unit 2 uses the processing target gas C having a relative humidity of 100% sucked from the scrubber unit 1 side as the first gas G1, the processed gas E through the duct A1 as the second gas G2, and the first gas. By mixing G1 and the second gas G2, a gas D to be mixed whose humidity is adjusted is produced.

  In the mixing unit 2, the processed gas E supplied as the second gas G2 has a lower humidity than the mixed processing target gas D. That is, the water concentration of the mixed processing target gas D is consumed by the plasma processing unit 3, so that the water concentration in the processed gas E is lower than the water concentration of the mixed processing target gas D. The mixing unit 2 mixes the processed gas E having a lower humidity than the mixed processing target gas D and the processing target gas C having a relative humidity of 100%. In this case, the humidity of the mixing target gas D is determined by the mixing ratio M (M = G1 / G2) of the first gas G1 and the second gas G2. The mixing control unit 6 in the control device 4 controls the mixing ratio M. Control of the mixing ratio M by the mixing controller 6 will be described later.

  FIG. 3 is a schematic diagram showing the configuration of the plasma processing unit 3 in the gas processing apparatus 100. As shown in FIG. 3, the plasma processing unit 3 includes a honeycomb structure 31 through which the gas D to be mixed passes, a first electrode 32 disposed on the upstream side of the honeycomb structure 31, and a honeycomb structure 31. And a high voltage power source 34 for applying a high voltage between the first electrode 32 and the second electrode 33.

  The honeycomb structure 31 has a large number of through-holes 31a formed in a honeycomb shape in a direction in which the gas to be mixed D flowing through the ventilation path A is passed, and is made of ceramic or the like. The first electrode 32 is connected to the positive electrode of the high voltage power supply 34 through a conducting wire, and is made of a metal mesh or the like. The second electrode 33 is connected to the negative pole of the high voltage power supply 34 via a conducting wire, and is made of a metal mesh or the like. The mesh shape of the first electrode 32 and the second electrode 33 is coarser than the through-hole 31 a formed in the honeycomb structure 31. The high voltage power supply 34 applies a high voltage of several kV to several tens of kV as the voltage V between the first electrode 32 and the second electrode 33.

  In the plasma processing unit 3, when a high voltage is applied between the first electrode 32 and the second electrode 33, plasma is generated inside the through hole 31 a of the honeycomb structure 31. Thereby, the harmful gas contained in the gas D to be mixed is decomposed into harmless substances by ions and radicals generated in the plasma. Further, dust contained in the gas D to be mixed is charged and attached to the first electrode 32 and the second electrode 33 and is removed by adsorption. The gas processed by the plasma processing unit 3 is exhausted downstream of the ventilation path A as the processed gas E.

  In the gas processing apparatus 100, the control device 4 includes a mixing control unit 6 and an applied voltage control unit 7. FIG. 4 shows an outline of the hardware configuration of the control device 4.

  The control device 4 includes a central processing unit (CPU) 4-1, a random access memory (RAM) 4-2, a read only memory (ROM) 4-3, interfaces 4-4 and 4-5, and Are connected to the bus 4-6. In addition, a mixing ratio applied voltage control program is installed in the control device 4 as a program unique to the present embodiment.

  The CPU 4-1 operates according to the mixture ratio applied voltage control program installed in the control device 4 while accessing the RAM 4-2 and the ROM 4-3 by processing information input via the interface 4-4. To do. In the control device 4, the mixing control unit 6 and the applied voltage control unit 7 are realized as processing functions of the CPU 4-1.

  Hereinafter, the processing operation of the CPU 4-1 according to this mixture ratio application voltage control program will be described with reference to the flowcharts shown in FIGS. 5 and 6. Here, description will be made assuming that the mixing control unit 6 performs the processing operation according to the flowchart shown in FIG. 6 and the applied voltage control unit 7 performs the processing operation according to the flowchart shown in FIG.

(Control of mixing ratio)
The mixing control unit 6 takes in the first absolute humidity hF measured by the humidity sensor S1 (FIG. 5: step S101), reads a preset target value hsp (step S102), and takes in the first taken in The absolute humidity hF is compared with the read target value hsp (step S103).

  If the first absolute humidity hF does not match the target value hsp (NO in step S103), the mixing control unit 6 supplies the first absolute humidity hF and the target value hsp so that they match. The opening degree θ of the air valve 5 is adjusted (step S104). In other words, the mixing control unit 6 adjusts the flow rate of the processed gas E supplied to the mixing unit 2 to adjust the first absolute humidity hF and the target value hsp so that the first absolute humidity hF matches the target value hsp. The mixing ratio M of the gas G1 and the second gas G2 is adjusted (controlled).

  In this embodiment, the mixing ratio M of the first gas G1 and the second gas G2 is adjusted so that the relative humidity of the mixing target gas D is about 90% by setting the target value hsp. As a result, the mixed processing target gas D having a relative humidity of about 90% is sent to the plasma processing unit 3.

  Here, about 90%, which is set as the relative humidity of the gas D to be mixed, is a moisture amount sufficient to generate plasma discharge and a moisture amount that suppresses occurrence of abnormal discharge such as spark discharge. In this example, the relative humidity of the gas D to be mixed is about 90%, but this is only an example. If the amount of water is sufficient to generate plasma discharge and the amount of water is sufficient to suppress the occurrence of abnormal discharge such as spark discharge, the relative humidity set value of the gas D to be mixed, that is, the first absolute humidity hF The set target value hsp can be changed as appropriate.

[Control of applied voltage]
The applied voltage control unit 7 takes in the first absolute humidity hF measured by the humidity sensor S1 and the second absolute humidity hR measured by the humidity sensor S2 (FIG. 6: Steps S201 and S202). A difference Δh (Δh = hF−hR) between the absolute humidity hF and the second absolute humidity hR is calculated (step S203).

  Then, the applied voltage control unit 7 reads a reference humidity difference range ΔhB ± α that is set in advance as a predetermined temperature difference range (step S204), and calculates the first absolute humidity hF and the second absolute humidity hR. The voltage V applied between the electrodes of the plasma processing unit 3 is adjusted (controlled) so that the difference Δh falls within the reference humidity difference range ΔhB ± α (steps S205 to S208).

  That is, as shown in FIG. 7A, when the difference Δh between the first absolute humidity hF and the second absolute humidity hR is large and is outside the reference humidity difference range ΔhB ± α (Δh> ΔhB + α, YES in step S205) ) The applied voltage control unit 7 lowers the voltage V applied between the electrodes of the plasma processing unit 3 (step S206).

  Thereby, the gas processing capability with respect to the mixed processing target gas D in the plasma processing unit 3 is suppressed, the amount of water consumption in the plasma processing unit 3 is reduced, the second absolute humidity hR is increased, and the first absolute humidity hF. The difference Δh between the first absolute humidity hR and the second absolute humidity hR becomes small, and the difference Δh between the first absolute humidity hF and the second absolute humidity hR falls within the reference humidity difference range ΔhB ± α (see FIG. 7B). ).

  As shown in FIG. 8A, when the difference Δh between the first absolute humidity hF and the second absolute humidity hR is small and outside the reference humidity difference range ΔhB ± α (Δh <ΔhB−α, step S207 YES), the applied voltage control unit 7 increases the voltage V applied between the electrodes of the plasma processing unit 3 (step S208).

  Thereby, the gas processing capability with respect to the mixed processing target gas D in the plasma processing unit 3 is increased, the amount of water consumption in the plasma processing unit 3 is increased, the second absolute humidity hR is decreased, and the first absolute humidity hF and The difference Δh from the second absolute humidity hR becomes large, and the difference Δh between the first absolute humidity hF and the second absolute humidity hR falls within the reference humidity difference range ΔhB ± α (see FIG. 8B). .

  Thus, in the present embodiment, the mixing ratio M of the first gas G1 and the second gas G2 is adjusted (controlled) so that the first absolute humidity hF becomes the target value hsp, and the first The voltage V applied between the electrodes of the plasma processing unit 3 is adjusted (controlled) so that the difference Δh between the absolute humidity hF and the second absolute humidity hR falls within the reference humidity difference range ΔhB ± α.

  Thereby, in this Embodiment, the humidity environment in the honeycomb structure 31 is kept constant, and stabilization of gas processing capability is achieved. In addition, when the air after plasma treatment is supplied into the room, the humidity of the air after the plasma treatment is not increased and the person in the room does not feel uncomfortable.

  In FIG. 9, the functional block diagram of the principal part of the mixing control part 6 is shown. The mixing control unit 6 includes a first absolute humidity capturing unit 61, a target value storage unit 62, a humidity comparison unit 63, and an opening degree adjustment unit (mixing ratio adjustment unit) 64.

  In the mixing control unit 6, the first absolute humidity taking unit 61 takes in the first absolute humidity hF measured by the humidity sensor S1. The target value storage unit 62 stores a preset target value hsp. The humidity comparison unit 63 compares the first absolute humidity hF captured by the first absolute humidity capture unit 61 with the target value hsp stored in the target value storage unit 62. The opening degree adjustment unit (mixing ratio adjustment unit) 64 is based on the comparison result from the humidity comparison unit 63 so that the first absolute humidity hF and the target value hsp coincide with each other. (Mixing ratio M in the mixing unit 2) is adjusted.

  In FIG. 10, the functional block diagram of the principal part of the applied voltage control part 7 is shown. The applied voltage control unit 7 includes a first absolute humidity capturing unit 71, a second absolute humidity capturing unit 72, a humidity difference calculating unit 73, a reference humidity difference range storage unit 74, and an applied voltage adjusting unit 75. And.

  In the applied voltage control unit 7, the first absolute humidity capturing unit 71 captures the first absolute humidity hF measured by the humidity sensor S1, and the second absolute humidity capturing unit 72 is measured by the humidity sensor S2. The second absolute humidity hR is captured. The humidity difference calculation unit 73 calculates a difference Δh (Δh = hF−hR) between the first absolute humidity hF measured by the humidity sensor S1 and the second absolute humidity hR measured by the humidity sensor S2. The reference humidity difference range storage unit 74 stores a preset reference humidity difference range ΔhB ± α.

  The applied voltage adjustment unit 75 checks whether or not the humidity difference Δh calculated by the humidity difference calculation unit 73 is within the reference humidity difference range ΔhB ± α, and the calculated humidity difference Δh is the reference humidity difference range. If the calculated humidity difference Δh is smaller than the reference humidity difference range ΔhB−α so that the voltage V applied between the electrodes of the plasma processing unit 3 is lowered when it is larger than ΔhB + α, the plasma processing unit 3 The voltage V applied between the electrodes of the plasma processing unit 3 is adjusted so as to increase the voltage V applied between the electrodes.

  In the embodiment described above, the value (level) of the voltage V applied between the electrodes of the plasma processing unit 3 is adjusted (controlled) by the applied voltage control unit 7. The voltage V may be periodically applied between them, and the duty ratio of the applied voltage V (the ratio between the on time and the off time within one cycle) may be adjusted (controlled).

  In the above-described embodiment, the scrubber unit 1 adjusts the relative humidity of the processing target gas B to 100%. However, the relative humidity adjusted by the scrubber unit 1 is not limited to 100%. That is, if a stable high-humidity processing target gas B can be obtained, the set value of the relative humidity adjusted by the scrubber unit 1 can be set as appropriate.

  In the above-described embodiment, the duct A1 extending from the downstream side of the plasma processing unit 3 to the mixing unit 2 is provided, and the processed gas E is supplied to the mixing unit 2 as the second gas G2. 11, a duct A2 extending from the upstream side of the scrubber unit 1 to the mixing unit 2 is provided, and the processing target gas B before being humidified by the scrubber unit 1 is supplied to the mixing unit 2 as the second gas G2. It may be.

[Extension of the embodiment]
The present invention has been described above with reference to the embodiment. However, the present invention is not limited to the above embodiment. Various changes that can be understood by those skilled in the art can be made to the configuration and details of the present invention within the scope of the technical idea of the present invention.

The gas processing apparatus of the present invention can also be applied to so-called reforming for generating a hydrogen-containing gas from hydrocarbons or the like for the purpose of efficiently generating hydrogen used in a fuel cell or the like.
For example, in the case of octane (substance relatively close to the average molecular weight of gasoline) C ₈ H ₁₈ , when supplied to this gas treatment device, the chemical reaction represented by the following formula (1) is promoted, and as a result, hydrogen gas is efficiently generated. can do.
C ₈ H ₁₈ + 8H ₂ O + 4 (O ₂ + 4N ₂ ) → 8CO ₂ + 17H ₂ + 16N ₂ ... (1)

  DESCRIPTION OF SYMBOLS 1 ... Scrubber unit (water processing part), 2 ... Mixing part (mixing part), 3 ... Plasma processing part, 4 ... Control apparatus, 4-1 ... CPU, 4-2 ... RAM, 4-3 ... ROM, 4- 4, 4-5 ... Interface, 5 ... Air supply valve, 6 ... Mixing control unit, 7 ... Applied voltage control unit, A ... Ventilation path, A1, A2 ... Duct, S1, S2 ... Humidity sensor, 31 ... Honeycomb structure , 32, 33 ... electrodes, 61 ... first absolute humidity intake unit, 62 ... target value storage unit, 63 ... humidity comparison unit, 64 ... opening degree adjustment unit (mixing ratio adjustment unit), 71 ... first absolute Humidity taking-in part 72 ... 2nd absolute humidity taking-in part 73 ... Humidity difference calculation part 74 ... Reference humidity difference range memory | storage part 75 ... Applied voltage adjustment part 100 ... Gas processing apparatus.

Claims (3)

In the gas processing apparatus configured to purify the processing target gas and output the processed gas,
A water treatment unit arranged in a ventilation path and configured to humidify the gas to be treated flowing in the ventilation path;
The gas to be processed before being humidified by the water treatment unit or the treatment before being humidified by the water treatment unit, the first gas is the gas to be treated which is provided downstream of the water treatment unit and humidified by the water treatment unit. A mixing unit configured to adjust humidity by mixing the first gas and the second gas as a second gas,
A honeycomb structure having a large number of through-holes provided downstream of the mixing section and passing through the processing target gas whose humidity has been adjusted in the mixing section as a processing target gas, and the mixing section It has electrodes arranged on the upstream side and the downstream side of the honeycomb structure with respect to the direction in which the gas to be treated passes, and plasma is applied to the through-holes of the honeycomb structure by a voltage applied between the electrodes. A plasma processing unit configured to generate;
A first humidity measuring unit configured to measure the absolute humidity of the gas to be mixed toward the plasma processing unit from the mixing unit as a first absolute humidity;
A second humidity measuring unit configured to measure the mixed processing target gas that has passed through the plasma processing unit as the processed gas, and measure the absolute humidity of the processed gas as a second absolute humidity;
A mixing ratio control unit configured to control a mixing ratio of the first gas and the second gas in the mixing unit such that the first absolute humidity becomes a target value;
An applied voltage control unit configured to control a voltage applied to the plasma processing unit such that a difference between the first absolute humidity and the second absolute humidity falls within a predetermined humidity difference range; A gas processing apparatus comprising: The gas treatment device according to claim 1, wherein
The applied voltage controller is
When the difference between the first absolute humidity and the second absolute humidity is large and out of the predetermined humidity difference range, the gas processing capacity for the mixed processing target gas in the plasma processing unit is suppressed. Further, the gas processing apparatus is configured to control a voltage applied to the plasma processing unit. The gas treatment device according to claim 1, wherein
The applied voltage controller is
When the difference between the first absolute humidity and the second absolute humidity is small and out of the predetermined humidity difference range, the plasma processing unit increases the gas processing capacity for the mixed processing target gas. A gas processing apparatus configured to control a voltage applied to a plasma processing unit.