JP2018088381A - Organic el device and manufacturing method of organic el device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce a display unevenness of an organic EL device.SOLUTION: An organic EL device 100 includes: an organic EL element 30 having an optical resonance structure; a sealing layer 34 that is laminated on the organic EL element 30; a color filter 36 provided onto the sealing layer 34; and a convex part 35 separating the color filter 36. In the organic EL element 30, an optical distance is adjusted in each sub pixel 18 by a cavity adjustment layer 60. The sealing layer 34 includes a flatten layer 34b that cancels a step between the sub pixels 18 of the cavity adjustment layer 60. A reflection ratio in the flatten layer 34b of an exposed light for forming the convex part 35 is periodically changed when a film thickness of the flatten layer 34b is changed. In the organic EL device 100, a film thickness difference of the cavity adjustment layer 60 between a red sub pixel 18R and a blue sub pixel 18B is set to an almost half of the film thickness difference of the flatten layer 34b that changes the reflection ratio of the exposed light for forming the convex part 35 in one cycle.SELECTED DRAWING: Figure 9

Description

  The present invention relates to an organic electroluminescence (hereinafter referred to as organic EL) device and a method for manufacturing the organic EL device.

  An organic EL device using an organic EL element is superior to a liquid crystal display device (LCD) or the like in terms of small size and high contrast, so that it can be applied to a micro display such as a head mounted display (HMD) or an electronic viewer (EVF). Application is expected.

  Examples of the configuration of the organic EL device include a configuration that realizes color display by combining an organic EL element (white EL element) capable of obtaining white light emission and a color filter. The organic EL device having this configuration emits light of a color according to the color filter when light emitted from the organic EL element passes through the color filter.

  Patent Document 1 discloses an organic EL device in which an organic EL element (white EL element) has an optical resonance structure. This organic EL element has a pixel electrode and a counter electrode sandwiching an organic light emitting layer, has a reflective layer on the side opposite to the counter electrode when viewed from the pixel electrode, and has an insulating layer between the pixel electrode and the reflective layer. Have. The counter electrode has light reflectivity and light transmissivity. In this organic EL device, light emitted from the organic light emitting layer reciprocates between the reflective layer and the counter electrode, and light having a resonance wavelength corresponding to the optical distance between the reflective layer and the counter electrode is selectively amplified. To be taken out. For this reason, the organic EL element having an optical resonance structure outputs light having a peak wavelength corresponding to the optical distance between the reflective layer and the corresponding electrode.

  Further, in the organic EL device of Patent Document 1, the insulating layer of the organic EL element corresponding to the blue color filter is composed of the first insulating layer, and the insulating layer of the organic EL element corresponding to the green color filter is The organic EL element insulating layer corresponding to the red color filter is composed of the first insulating layer, the second insulating layer, and the third insulating layer. It is configured. Thereby, in this organic EL device, the optical distance between the reflective layer and the counter electrode in the organic EL element corresponding to the green color filter is such that the reflective layer and the counter electrode in the organic EL element corresponding to the blue color filter are It is larger than the optical distance and smaller than the optical distance between the reflective layer and the counter electrode in the organic EL element corresponding to the red color filter. Thus, in the organic EL device of Patent Document 2, the optical distance between the reflective layer and the counter electrode is individually adjusted for each color component by the insulating layer. For this reason, in the organic EL device of Patent Document 2, the resonance wavelength of the organic EL element can be matched with the wavelength of the color of the color filter corresponding to the organic EL element.

  Patent Document 2 discloses an organic EL device having a color filter (colored layer) and a convex portion on a sealing layer for sealing an organic EL element. The upper surface of the sealing layer is flat across a plurality of organic EL elements. The convex portion is provided so as to divide the color filter provided on the upper surface of the sealing layer for each color, and is covered with the color filter at the boundary of the color filter. The convex portion functions as a partition that reduces the rate at which the light emitted from the organic EL element passes through the color filter of a color other than the color filter that should be originally transmitted at the boundary of the color filter. According to this organic EL device, by having the convex portion, a decrease in the balance of the hue of light transmitted through the color filter is suppressed, and a decrease in symmetry in viewing angle characteristics is suppressed.

JP 2014-235959 A JP 2014-089804 A

  In the field of micro-displays such as a head-mounted display (HMD) and an electronic viewer (EVF), it is desired that the organic EL device has higher luminance and a wider color gamut. Therefore, it is conceivable that the configuration of the organic EL device is a combination of the technical features of Patent Documents 1 and 2 described above. Specifically, the organic EL element has an optical resonance structure, a different optical distance for each color is realized by the insulating layer, the upper surface of the sealing layer for sealing the organic EL element is flattened, It is assumed that a color filter and a convex portion are provided on the surface.

  However, in the organic EL device having such a configuration, display unevenness may occur. When the cause was investigated, in the organic EL device having such a configuration, there was a case where the variation in the size and shape of the convex portion serving as the partition wall was increased. If the size and shape of the projections vary, the ratio of the light emitted from the organic EL element that passes through the color filter other than the color filter that should originally pass through the boundary of the color filters to the size and shape of the projections It is presumed that display unevenness occurs as a result.

  The present invention has been made in view of the circumstances described above, and an object of the present invention is to reduce display unevenness of an organic EL device.

  In order to solve the above problems, an aspect of an organic EL device according to the present invention includes a plurality of organic EL elements disposed on a substrate, and a sealing layer that covers and seals the plurality of organic EL elements. The plurality of colored layers formed on the sealing layer in a one-to-one correspondence with the plurality of organic EL elements, and the colored layers of different colors formed by exposure on the sealing layer, respectively. Each of the plurality of organic EL elements includes a pixel electrode and a counter electrode sandwiching an organic light emitting layer, and the pixel. A reflective layer disposed on the opposite side of the counter electrode as viewed from the electrode; and an optical distance between the counter electrode and the reflective layer disposed between the pixel electrode and the reflective layer. A cavity adjustment layer that conforms to the optical resonance conditions for each color of The sealing layer includes a planarizing layer that flattens the sealing layer, and exposure light used for forming the convex portion passes through a photosensitive resin layer that is a material of the convex portion. When the ratio of the return light to the original exposure light reflected at the lower layer of the photosensitive resin layer and returning to the photosensitive resin layer as a reflectance is defined as the reflectance, it is divided by the convex portion. The film thickness difference between the cavity adjustment layers corresponding to the two types of colored layers is about half of the film thickness difference of the planarizing layer that changes the reflectance by one period.

  According to one aspect of the organic EL device, the organic EL element has an optical resonance structure, and the optical distance between the reflective layer and the counter electrode is different for each color of the colored layer. This difference in optical distance is adjusted by the cavity adjustment layer between the pixel electrode and the reflective layer. The flattening layer flattens the sealing layer by offsetting the steps between the organic EL elements caused by the difference in optical distance. In the organic EL device, a colored layer and a convex portion that separates the colored layer are provided on the sealing layer. The convex portion is formed by exposure. Part of the exposure light for forming the convex portion passes through the photosensitive resin layer that is the material of the convex portion, is reflected in the lower layer of the photosensitive resin layer, and returns to the photosensitive resin layer. Here, when the film thickness of the planarizing layer is changed, the reflectance, which is the ratio of the return light returning to the photosensitive resin layer to the original exposure light, periodically changes. In this organic EL device, the difference in thickness of each cavity adjustment layer corresponding to the two types of colored layers divided by the convex portion is reduced to about half of the difference in thickness of the flattening layer that changes the above-described reflectance by one period. did. Since the flattening layer cancels out the level difference between the organic EL elements, the difference in film thickness of each cavity adjustment layer corresponding to the two types of colored layers divided by the convex portions is flat above each cavity adjustment layer. This corresponds to the difference in the thickness of the chemical layer. For this reason, in the present organic EL device, the above-described condition is applied to the difference in thickness of the planarization layer between the two types of colored layers divided by the convex portions. That is, in this organic EL device, the reflectance on one side of the convex portion and the reflectance on the other side of the convex portion are shifted by a half cycle. Thereby, in this organic EL device, the exposure energy of the photosensitive resin layer at the position of the convex portion to which the above-mentioned conditions are applied becomes substantially constant regardless of the variation in the film thickness of the planarizing layer. Therefore, according to the present organic EL device, it is possible to suppress variations such as the size of the convex portions and to suppress display unevenness.

  In one aspect of the organic EL device described above, in the organic EL element, the thickness of the cavity adjustment layer corresponding to the colored layer having the largest refractive index difference from the refractive index of the convex portion of the colored layers of a plurality of colors. And the thickness of the cavity adjustment layer corresponding to at least one of the colored layers in contact with the colored layer having the largest refractive index difference, the flattening layer film that changes the reflectance by one period. About half of the thickness difference.

  According to this aspect, it is possible to suppress variations in the size or the like of the convex portion between the colored layer having the largest refractive index difference from the refractive index of the convex portion and the colored layer adjacent to the colored layer. If there is a variation in the convex part that separates the colored layer that has a large refractive index difference from the convex part, and there is a variation in the convex part that separates the colored layer whose refractive index difference from the convex part is smaller than that of the colored layer In comparison, the effect of being visually recognized as display unevenness is large. According to the organic EL device of this aspect, since it is possible to suppress the variation of the convex portion that separates the colored layer having a large refractive index difference from the convex portion, it is possible to reduce the effect of being visually recognized as display unevenness. Display unevenness can be surely reduced.

  In one aspect of the organic EL device described above, the colored layer having the largest refractive index difference is a red colored layer, and at least one colored layer adjacent to the colored layer having the largest refractive index difference is colored blue. Is a layer. According to this aspect, it is possible to suppress variations such as the size of the convex portion between the red colored layer having the largest refractive index difference from the refractive index of the convex portion and the blue colored layer adjacent thereto, Display unevenness can be reduced more reliably.

  In one aspect of the organic EL device described above, the thickness difference of the planarizing layer is a length obtained by dividing the half wavelength of the exposure light by the refractive index of the planarizing layer. This condition means that the wavelength of the exposure light is equal to the optical distance of the round trip in the thickness direction of the planarizing layer, and the reflectance on one side of the convex portion and the reflectance on the other side of the convex portion are This means that the exposure light is shifted by exactly one wavelength. For this reason, the condition that the reflectance of the exposure light is about half of the difference in film thickness of the flattening layer that changes one cycle is that the reflectance on one side of the convex portion and the reflectance on the other side of the convex portion are the exposure light. Is equivalent to shifting by exactly half a wavelength. Therefore, according to this aspect, the exposure energy of the photosensitive resin layer becomes substantially constant regardless of the film thickness of the planarizing layer, variation in the size of the convex portion can be suppressed, and display unevenness is reduced. You can understand more clearly what you can do.

  In one aspect of the organic EL device described above, the plurality of organic EL elements include organic EL elements that satisfy optical resonance conditions having different orders of resonance. According to this aspect, the optical distance between the counter electrode and the reflective layer is in accordance with the optical resonance condition for each color of the colored layer, and the planarizing layer that changes the reflectance of the exposure light by one cycle. The condition that the film thickness difference is about half of the film thickness difference can be more reliably achieved.

  In one aspect of the organic EL device described above, the cavity adjustment layer corresponding to each of the colored layers on both sides of any one of the convex portions includes an adjustment layer having a common refractive index, and the adjustment having the common refractive index. The film thickness difference of the cavity adjusting layer was constituted by the film thickness of the layer. According to this aspect, it is possible to suppress an increase in manufacturing steps required to realize the film thickness difference of the cavity adjustment layer, and to easily adjust the film thickness difference of the cavity adjustment layer.

  In one aspect of the organic EL device described above, the cavity adjustment layer corresponding to the colored layer on one side divided by any one of the convex portions includes a first adjustment layer having a first refractive index, The cavity adjustment layer corresponding to the colored layer on the other side has a second adjustment layer having a second refractive index different from the first refractive index, and the film thickness of the first adjustment layer And the film thickness difference of the cavity adjustment layer was constituted by the film thickness of the second adjustment layer. According to this aspect, the optical distance between the counter electrode and the reflective layer and the film thickness difference of the cavity adjustment layer can be adjusted in more detail.

  In one aspect of the organic EL device described above, the cavity adjustment layer other than the cavity adjustment layer that configures the film thickness difference of the cavity adjustment layer by the film thickness of the first adjustment layer and the film thickness of the second adjustment layer, It has a layer having a common refractive index and film thickness with either one of the first adjustment layer or the second adjustment layer. According to this aspect, the manufacturing process of the cavity adjustment layer can be simplified while adjusting the optical distance between the counter electrode and the reflective layer and the film thickness difference of the cavity adjustment layer in more detail.

  Another aspect of the organic EL device according to the present invention corresponds to a plurality of organic EL elements disposed on a substrate, a sealing layer that covers and seals the plurality of organic EL elements, and the plurality of organic EL elements. A colored layer of at least red, green, and blue formed on the sealing layer, and the colored layer of different colors formed by exposure on the sealing layer, respectively, And a convex portion having a height lower than that of the colored layer. Each of the plurality of organic EL elements includes a pixel electrode and a counter electrode sandwiching an organic light emitting layer, a reflective layer disposed on the side opposite to the counter electrode when viewed from the pixel electrode, the pixel electrode and the reflective layer And a cavity adjusting layer that makes an optical distance between the counter electrode and the reflective layer in accordance with an optical resonance condition for each color of the colored layer. The sealing layer includes a planarization layer that flattens the top of the sealing layer. In this organic EL device, the film thickness of the cavity adjusting layer corresponding to the blue colored layer was made larger than the film thickness of each cavity adjusting layer corresponding to the red and green colored layers.

  According to this aspect, the optical distance between the counter electrode and the reflective layer conforms to the optical resonance condition for each color of the colored layer, and the film thickness difference of the planarizing layer between the colored layers is determined according to a predetermined condition ( Specifically, the reflectance of the exposure light can be set to about half of the difference in film thickness of the planarization layer that changes one period. Therefore, according to the present organic EL device, it is possible to suppress variations such as the size of the convex portions and to suppress display unevenness.

  One aspect of the method for producing an organic EL device according to the present invention includes an organic EL element step of forming a plurality of organic EL elements on a substrate, a sealing step of covering and sealing the plurality of organic EL elements, Corresponding to the organic EL element, a coloring step of forming at least a red, green, and blue coloring layer on the sealing layer, and a step between the sealing step and the coloring step, and different colors And forming a convex portion having a height on the sealing layer lower than that of the colored layer by exposure. The organic EL element process includes a pixel electrode forming process and a counter electrode forming process for forming a pixel electrode and a counter electrode sandwiching an organic light emitting layer, and a reflective layer disposed on the opposite side of the counter electrode as viewed from the pixel electrode A reflective layer forming step of forming a reflective layer; and an optical distance between the counter electrode and the reflective layer according to an optical resonance condition for each color of the colored layer. A cavity adjusting layer forming step of forming a cavity adjusting layer to be obtained. The sealing step includes a planarization layer forming step of forming a planarization layer that planarizes the sealing layer. In the cavity adjustment layer forming step, the difference in film thickness of each cavity adjustment layer corresponding to the two types of colored layers divided by the protrusions is determined using the exposure light used for forming the protrusions as the protrusions. Reflectance, which is the ratio of the return light to the original exposure light when passing through the photosensitive resin layer, which is the material, and being reflected in the lower layer of the photosensitive resin layer and returning to the photosensitive resin layer as return light In the periodic dependence on the change in the film thickness of the flattening layer, the reflectance is reduced to about half the film thickness difference in the flattening layer that changes the reflectivity by one period.

  According to this aspect, it is possible to manufacture an organic EL device in which variations in the size or the like of the protrusions are suppressed and display unevenness is reduced.

It is sectional drawing which shows the structure of the organic EL apparatus 2000 which is a comparative example of the organic EL apparatus of 1st Embodiment of this invention. 5 is a diagram showing the film thickness of each layer constituting the organic EL device 2000. FIG. It is a figure which shows the manufacturing process of the convex part 35 of the organic EL apparatus 2000. FIG. In organic EL device 2000, it is a figure which shows the reflectance of exposure light when the film thickness of the planarization layer 34b is changed. In organic EL device 2000, it is a figure which shows the average reflectance of the exposure light between the sub pixels 18 when the film thickness of the planarization layer 34b is changed. In the organic EL device 2000, the color filter 36 and the convex part 35 are enlarged sectional views. In the organic EL device 2000, it is a figure which shows the wavelength dependence of the refractive index of the color filter 36, and the refractive index of the convex part 35. FIG. In the organic EL device 2000, the color filter 36 and the convex part 35 are enlarged sectional views. It is sectional drawing which shows the structure of the organic EL apparatus 100 which is 1st Embodiment of this invention. 2 is a diagram showing the film thickness of each layer constituting the organic EL device 100. FIG. It is sectional drawing which shows the structure of 100 A of organic EL apparatuses which are 2nd Embodiment of this invention. It is a figure which shows the film thickness of each layer which comprises the organic EL apparatus 100A. It is a figure which shows the film thickness of each layer which comprises the organic electroluminescent apparatus of 3rd Embodiment of this invention. 3 is an equivalent circuit diagram showing an electrical configuration of the organic EL device 100. FIG. 1 is a plan view showing a configuration of an organic EL device 100. FIG. 2 is a schematic plan view showing the arrangement of sub-pixels 18. FIG. It is the schematic which shows the head mounted display which is an example of the electronic device using the organic EL apparatus 100 of 1st Embodiment.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, embodiments of the invention will be described with reference to the drawings. Note that the drawings to be used are appropriately enlarged or reduced so that the part to be described can be recognized. Further, in the following forms, for example, “on the substrate” is described, and unless otherwise specified, the substrate is disposed on or in contact with the substrate, or is disposed on the substrate via another component. Or a case where a part is disposed on the substrate and a part is disposed via another component.

1. Principle 1-1: Causes of Variation of Projection Size, etc. First, the organic EL device having the configuration shown in the problem is an organic EL device of a comparative example, and the size of the convex portion of the organic EL device of this comparative example is The cause of the variation such as the above will be described. FIG. 1 is a cross-sectional view showing a configuration of an organic EL device 2000 as a comparative example. FIG. 2 is a diagram showing the film thickness of each layer constituting the organic EL device 2000.

  The organic EL device 2000 includes a plurality of organic EL elements 30 arranged on a substrate (not shown) for each subpixel 18. Here, the sub-pixel 18 includes a sub-pixel 18B from which blue (B) light emission is obtained, a sub-pixel 18G from which green (G) light emission is obtained, and a sub-pixel 18R from which red (R) light emission is obtained. Hereinafter, the organic EL elements 30 corresponding to the sub-pixels 18B, 18G, and 18R are referred to as organic EL elements 30B, 30G, and 30R, respectively.

  The organic EL element 30 includes a reflective layer 25, a cavity adjustment layer 50, a pixel electrode 31, a functional layer 32, and a counter electrode 33 that are sequentially formed on the substrate. Here, the cavity adjustment layer 50 functions as an insulating layer. The pixel electrode 31 has optical transparency and functions as an anode. The pixel electrode 30 includes a pixel electrode 31B of the organic EL element 30B, a pixel electrode 31G of the organic EL element 30G, and a pixel electrode 31R of the organic EL element 30R. The counter electrode 33 has light reflectivity and light transmissivity, and functions as a common cathode. The functional layer 32 is an organic light emitting layer (OLED layer). In the organic EL element 30, light (white light) emitted from the functional layer 32 reciprocates between the reflective layer 25 and the counter electrode 33, and depends on the optical distance (optical path length) between the reflective layer 25 and the counter electrode 33. The optical resonance structure is such that light having a resonance wavelength (that is, light having a predetermined peak wavelength) is selectively amplified and extracted.

Here, the optical distance (optical path length) between the reflective layer 25 and the counter electrode 33 is d, the total phase shift between the reflective layer and the counter electrode is φ, and m is a natural number that determines the order of resonance. The resonance wavelength λ of the optical resonance structure of the organic EL element 30 is a wavelength that satisfies the resonance condition shown in the following equation (1), and this wavelength is the peak wavelength of the output light of the organic EL element 30.
d = {(2πm + φ) / 4π} λ (1)

  Therefore, in the organic EL device 2000, the optical distance between the reflective layer 25 and the counter electrode 33 in the organic EL element 30 is determined based on the above equation (1) and the peak wavelength representing the color of the sub-pixel 18. . For example, the optical distance between the reflective layer 25 and the counter electrode 33 in the organic EL element 30B of the blue sub-pixel 18B is a value obtained by substituting the blue peak wavelength of 470 nm into λ in the above equation (1). It is decided to. Since the peak wavelength is different for each color of the sub-pixel 18, the optical distance between the reflective layer 25 and the counter electrode 33 in the organic EL element 30 is different for each color of the sub-pixel 18. In the organic EL device 2000, the difference in optical distance is adjusted by the thickness and refractive index of the cavity adjustment layer 50 sandwiched between the reflective layer 25 and the counter electrode 33.

The cavity adjustment layer 50 of the blue sub-pixel 18B includes a first adjustment layer 51 and a second adjustment layer 52 sandwiched between the reflective layer 25 and the pixel electrode 31B. The cavity adjustment layer 50 of the green sub-pixel 18G includes a first adjustment layer 51, a second adjustment layer 52, and a third adjustment layer 53G sandwiched between the reflective layer 25 and the pixel electrode 31G. The cavity adjustment layer 50 of the red sub-pixel 18R includes a first adjustment layer 51, a second adjustment layer 52, and a third adjustment layer 53R sandwiched between the reflective layer 25 and the pixel electrode 31R. Specifically, the first adjustment layer 51 is a layer made of silicon oxide (SiO ₂ ). Specifically, the second adjustment layer 52 is a layer made of silicon nitride (SiN). Specifically, the third adjustment layers 53G and 53R are layers made of silicon oxide (SiO ₂ ).

  In FIG. 2, the film thickness of the first adjustment layer 51 is 35 nm, and the film thickness of the second adjustment layer 52 is 45 nm. Therefore, the film thickness of the cavity adjustment layer 50 of the blue sub-pixel 18B is 35 nm + 45 nm = 80 nm. The film thickness of the third adjustment layer 53G is 60 nm. Therefore, the film thickness of the cavity adjustment layer 50 of the green sub-pixel 18G is 80 nm + 60 nm = 140 nm. The thickness of the third adjustment layer 53R is 110 nm. Therefore, the film thickness of the cavity adjustment layer 50 of the red sub-pixel 18R is 80 nm + 110 nm = 190 nm. The film thicknesses of the cavity adjustment layers 50 of the sub-pixels 18 for each color are determined by considering the optical distance of the organic EL element 30 for each color as m in the above equation (1). Thus, the film thickness of the cavity adjustment layer 50 of the green sub-pixel 18G is thinner by 50 nm (−50 nm) than the film thickness of the cavity adjustment layer 50 of the red sub-pixel 18R. The thickness of the cavity adjustment layer 50 of the blue sub-pixel 18B is 110 nm thinner than the thickness of the cavity adjustment layer 50 of the red sub-pixel 18R (−110 nm), and the cavity adjustment of the green sub-pixel 18G is performed. The thickness of the layer 50 is 60 nm thinner (−60 nm). In the organic EL element 2000, since there is a difference in film thickness between the cavity adjustment layers 50 of the sub-pixels 18 for each color, a step is generated on the counter electrode 33 between the colors.

  The organic EL device 2000 has a sealing layer 34 that covers the counter electrode 33. The sealing layer 34 includes a first sealing layer 34 a, a planarization layer 34 b, and a second sealing layer 34 c that are sequentially stacked on the counter electrode 33. The first sealing layer 34a and the second sealing layer 34c are made of, for example, silicon nitride (SiN). The planarization layer 34b is made of, for example, an epoxy resin or an acrylic resin. The lower surface of the first sealing layer 34 a is deformed according to the step on the upper surface of the counter electrode 33, and is in close contact with the upper surface of the counter electrode 33. The first sealing layer 34 a has the same film thickness between the colors, and the upper surface thereof is also deformed according to the level difference of the upper surface of the counter electrode 33. The lower surface of the planarizing layer 34b is deformed according to the step on the upper surface of the counter electrode 33, and is in close contact with the upper surface of the first sealing layer 34a. The flattening layer 34b has a flat upper surface. The flattening layer 34b has a common height of the second sealing layer 34c in each sub-pixel 18, and flattens the upper surface of the sealing layer 34.

  Here, the film thickness of the planarization layer 34b differs among the sub-pixels of each color. Specifically, if the film thickness 34bR of the flattening layer 34b of the red sub-pixel 18R is D, the film thickness 34bG of the flattening layer 34b of the green sub-pixel 18G is D + 50 nm. The film thickness 34bB of the planarizing layer 34b is D + 110 (see FIG. 1).

  The organic EL device 2000 includes a color filter (colored layer) 36 and a convex portion (partition wall) 35 on the sealing layer 34. The color filter 36 includes a blue color filter 36B, a green color filter 36G, and a red color filter 36R corresponding to the color of the sub-pixel 18. The convex portion 35 is provided to divide the color filter 36 for each color, and includes a convex portion 35GB, a convex portion 35RG, and a convex portion 35RB. The convex portion 35GB is provided at a position where the green color filter 36G and the blue color filter 36B are separated. The convex portion 35RG is provided at a position where the red color filter 36R and the green color filter 36G are separated. The convex portion 35RB is provided at a position where the red color filter 36R and the blue color filter 36B are separated. The convex portion 35 is covered with the color filter 36 at the boundary of the color filter 36. The convex part 35 is comprised from transparent materials, such as an acrylic resin, for example.

  The organic EL device 2000 has a counter substrate (not shown) on the color filter 36 via a transparent resin layer (not shown). The organic EL device 2000 employs a top emission method in which the light output from the organic EL element 30 passes through the color filter 36 and is extracted from the counter substrate side. In FIG. 1, elements that are not related to each other (for example, a transistor that drives each sub-pixel 18) are not shown in the description.

  FIG. 3 is a diagram illustrating a manufacturing process of the convex portion 35. In the organic EL device 2000, after the sealing layer 34 is formed, the convex portion 35 is formed by a photolithography method, and after the convex portion 35 is formed, the color filter 36 is formed.

  In the projecting portion forming step of forming the projecting portion 35, first, a transparent photosensitive resin material is applied onto the sealing layer 34 using a spin coating method and pre-baked, whereby a transparent film having a thickness of about 1 μm is obtained. A photosensitive resin layer 45 is formed. In the example shown in FIG. 3, as the photosensitive resin material, a positive type material is employed in which the solubility in the developer increases when exposed and the exposed portion is removed. Next, a mask 46 is disposed above the photosensitive resin layer 45, and the photosensitive resin layer 45 is exposed and developed using a photolithography method. As a result, the portion exposed to the exposure light in the photosensitive resin layer 45 is removed, and the convex portion 35 is formed. For the exposure, a light source that emits i-line (mercury spectrum line having a wavelength of 365 nm) was used.

  When exposing the photosensitive resin layer 45, part of the i-line exposure light is transmitted from the photosensitive resin layer 45 to the sealing layer 34. The light transmitted to the sealing layer 34 is reflected and transmitted by various layers below the sealing layer 34 and returns to the photosensitive resin layer 45. The photosensitive resin layer 45 is affected by exposure light returning to the photosensitive resin layer 45 from the layer below the sealing layer 34 (hereinafter referred to as return light). The intensity of the return light depends on the thickness of the planarization layer 34b.

  FIG. 4 is a diagram showing the reflectance of exposure light when the thickness of the planarizing layer 34b is changed. Here, the reflectance of the exposure light refers to the ratio of the return light to the exposure light incident on the sealing layer 34 and below. The solid line RF-R in FIG. 4 shows the reflectance of the exposure light in the red sub-pixel 18R, the one-dot chain line RF-G shows the reflectance of the exposure light in the green sub-pixel 18G, and the two-dot chain line RF-B The reflectance of exposure light in the blue sub-pixel 18B is shown.

  As shown in FIG. 4, the reflectance of the exposure light changes periodically according to the change in the film thickness of the planarization layer 34b. The period of the reflectance of the exposure light, specifically, the film thickness difference from the film thickness at which the reflectivity becomes maximum when the film thickness is changed to the film thickness at which the reflectivity becomes the next maximum is almost common to the sub-pixels 18 of each color. doing. The film thickness of the flattening layer 34b at which the exposure light reflectance is maximized and the film thickness of the flattening layer 34b at which the exposure light reflectance is minimal are generally common to the sub-pixels 18 of the respective colors.

Here, the film thickness difference (for example, the film thickness difference from the film thickness at which the exposure light reflectance is maximized to the film thickness at which the exposure light reflectance is maximized) T that changes the reflectance of the exposure light by one period is T The following equation (2) is obtained.
T = λ / 2n (2)
In the formula (2), λ is a wavelength of exposure light for exposing the photosensitive resin layer 45. n is the refractive index of the planarization layer 34b. When the wavelength of the exposure light is 365 nm which is the wavelength of the i-line and the refractive index of the planarization layer 34b is 1.58, according to the above equation (2), the flatness that changes the reflectance of the exposure light by one period. The film thickness difference T of the conversion layer 34b is 116 nm. This can also be read from FIG.

  Since the convex portion 35 is formed between the sub-pixels 18, the portion where the convex portion 35 is formed in the photosensitive resin layer 45 is particularly due to the return light in the sub-pixel 18 on both sides of the portion where the convex portion 35 is formed. It is affected by optical interference. For example, the position between the red sub-pixel 18R and the green sub-pixel 18G in the photosensitive resin layer 45 is affected by the return light from the red sub-pixel 18R and the return light from the green sub-pixel 18G. It is. The return light in the sub-pixels 18 on both sides interferes with the portion of the photosensitive resin layer 45 where the convex portion 35 is formed, and the exposure energy changes there.

  FIG. 5 shows an average reflectance obtained by averaging the reflectance of the exposure light in one subpixel 18 of the two subpixels 18 separated by the convex portion 35 and the reflectance of the exposure light in the other subpixel 18. The dependence on the film thickness of the planarization layer 34b is shown. More specifically, a solid line RF-RB in FIG. 5 represents an average reflectance obtained by averaging the reflectance of the exposure light in the red sub-pixel 18R and the reflectance of the exposure light in the blue sub-pixel 18B. A chain line RF-RG indicates an average reflectance obtained by averaging the reflectance of the exposure light in the red sub-pixel 18R and the reflectance of the exposure light in the green sub-pixel 18G, and a broken line RF-GB indicates the green sub-pixel. An average reflectance obtained by averaging the reflectance of the exposure light in 18G and the reflectance of the exposure light in the blue sub-pixel 18B is shown.

  As shown in FIG. 5, the average reflectance of exposure light (see the alternate long and short dash line RF-RG) between the red sub-pixel 18R and the green sub-pixel 18G, and the green sub-pixel 18G and the blue sub-pixel 18B The average reflectance of the exposure light during the period (see the broken line RF-GB) is approximately 40% even if the film thickness of the planarizing layer 34b changes. The reason is presumed as follows.

  The film thickness difference of the planarization layer 34b between the red sub-pixel 18R and the green sub-pixel 18G is 50 nm as described above (see FIGS. 1 and 2). This is about half the film thickness difference T (= 116 nm) of the flattening layer 34b for changing the reflectance of the exposure light obtained from the equation (2) by one period. From this, at the position between the red sub-pixel 18R and the green sub-pixel 18G in the photosensitive resin layer 45, the reflectance of the exposure light in the red sub-pixel 18R and the exposure light in the green sub-pixel 18G. The reflectance is shifted by a half cycle. For example, when the thickness of the planarizing layer 34b of the red sub-pixel 18R is about 2540 nm, the reflectance of the exposure light is minimized in the red sub-pixel 18R (see the solid line RF-R in FIG. 4). On the other hand, when the film thickness of the flattening layer 34b of the red sub-pixel 18R is about 2540 nm, the film thickness of the flattening layer 34b of the green sub-pixel 18G is about 2590 nm. The reflectance of the exposure light at is maximum (see the one-dot chain line RF-G in FIG. 4). As described above, the interference between the red sub-pixel 18R and the green sub-pixel 18G in the photosensitive resin layer 45 is an interference between the return lights whose exposure light reflectances are shifted from each other by a half cycle. For this reason, the average reflectance of the exposure light between the red sub-pixel 18R and the green sub-pixel 18G is substantially constant even if the film thickness of the planarization layer 34b varies. As a result, the exposure energy applied to the position between the red sub-pixel 18R and the green sub-pixel 18G in the photosensitive resin layer 45 is substantially constant regardless of the variation in the film thickness of the planarizing layer 34b.

  Further, since the film thickness difference of the planarization layer 34b between the green sub-pixel 18G and the blue sub-pixel 18B is 60 nm as described above (see FIGS. 1 and 2), the above-described formula (2) Is about half the thickness difference T (= 116 nm) of the planarization layer 34b obtained from the above. For this reason, also in the position between the green subpixel 18G and the blue subpixel 18B in the photosensitive resin layer 45, the reflectance of the exposure light in the green subpixel 18G and the exposure light in the blue subpixel 18B. The reflectance is shifted by a half cycle. Therefore, the average reflectance of the exposure light between the green sub-pixel 18G and the blue sub-pixel 18B is substantially constant even if the film thickness of the planarization layer 34b varies. As a result, the exposure energy applied to the position between the green sub-pixel 18G and the blue sub-pixel 18B in the photosensitive resin layer 45 is substantially constant regardless of the variation in the film thickness of the planarizing layer 34b.

  On the other hand, as shown in FIG. 5, the average reflectance (see solid line RF-RB) of the exposure light between the red sub-pixel 18R and the blue sub-pixel 18B corresponds to the change in the thickness of the planarization layer 34b. Thus, it periodically changes in the range of slightly less than 30% to slightly more than 60%. The reason is presumed as follows.

  Since the film thickness difference of the flattening layer 34b between the red sub-pixel 18R and the blue sub-pixel 18R is 110 nm as described above (see FIGS. 1 and 2), it is obtained from the above-described equation (2). The thickness difference T (= 116 nm) of the flattening layer 34b is about the same. The film thickness difference T of the flattening layer 34b in the above formula (2) corresponds to one period of the reflectance of the exposure light that changes periodically. From this, at the position between the red sub-pixel 18R and the blue sub-pixel 18B in the photosensitive resin layer 45, the reflectance of the exposure light in the red sub-pixel 18R and the exposure light in the blue sub-pixel 18B. The reflectance is shifted by one cycle. For example, when the thickness of the planarizing layer 34b of the red sub-pixel 18R is about 2480 nm, the reflectance of the exposure light is maximized in the red sub-pixel (see the solid line RF-R in FIG. 4). On the other hand, when the thickness of the planarizing layer 34b of the red sub-pixel 18R is about 2480 nm, the thickness of the planarizing layer 34b of the blue sub-pixel 18G is about 2600 nm. The reflectance of the exposure light at is maximum (see the one-dot chain line RF-B in FIG. 4). As described above, the interference between the red sub-pixel 18R and the blue sub-pixel 18B in the photosensitive resin layer 45 is an interference between the return lights whose exposure light reflectances are shifted from each other by one period. Therefore, the average reflectance of the exposure light between the red sub-pixel 18R and the blue sub-pixel 18B when the film thickness of the flattening layer 34b is changed depends on variations in the film thickness of the flattening layer 34b. Will be. Therefore, the exposure energy given to the position between the red sub-pixel 18R and the blue sub-pixel 18B in the photosensitive resin layer 45 depends on the variation in the film thickness of the planarization layer 34b.

As described above, the red sub-pixel 18R and the blue sub-pixel 18R in which the film thickness difference of the flattening layer 34b is approximately the same as the film thickness difference T (= 116 nm) of the flattening layer 34b determined by the above equation (2). Since the exposure energy of the photosensitive resin layer 45 varies with the subpixel 18B according to the variation in the film thickness of the planarization layer 34b, the convex portion 35 between the red subpixel 18R and the blue subpixel 18B. Will vary in size.
The above is the cause of the variation in the size of the convex portion.

1-2: Examination of variation in size or the like of convex portion as cause of display unevenness The following two types are presumed as the reason why display unevenness occurs due to variation in the size or the like of convex portion 35. The first reason is the lens effect of the convex portions 35, and the second reason is the variation in apertures between the convex portions 35.

1-2-1: Lens Effect of Convex Portions FIG. 6 is an enlarged cross-sectional view showing the color filter 36 and the convex portions 35. In FIG. 6A, the size of the convex portion 35RB between the red sub-pixel 18R and the blue sub-pixel 18B is the same as the size of the convex portion 35RG between the red sub-pixel 18R and the green sub-pixel 18G. The case where it is small with respect to thickness (the width of a convex part is thin) is shown. On the other hand, FIG. 6B shows that the size of the convex portion 35RB between the red subpixel 18R and the blue subpixel 18B is the same as the convex portion 35RG between the red subpixel 18R and the green subpixel 18G. The case where it is comparable with the magnitude | size of is shown.

  Part of the light output from the organic EL element 30 enters the convex portion 35, and the light transmitted through the convex portion 35 enters the color filter 36. For example, a part of the light output from the organic EL element 30 of the red sub-pixel 18R is transmitted through the convex portion 35RB between the red sub-pixel 18R and the blue sub-pixel 18B, and the red color filter 36R. Suppose that it is incident on. More specifically, in each convex portion 35RB shown in FIGS. 6A and 6B, the relative positions in the section between the center of the convex portion 35RB and the center of the convex portion 35RG are the same. It is assumed that the light Ray10 enters the position. When the light Ray10 moves from the convex portion 35RB to the color filter 36R, the traveling direction is bent according to the incident angle from the convex portion 35RB to the color filter 36R and the refractive index difference between the convex portion 35RB and the color filter 36R.

  Specifically, it is as follows. The angle (that is, the incident angle) of the light Ray10 incident from the convex portion 35RB with respect to the normal line of the boundary (tangent) between the convex portion 35RB and the red color filter 36R is as shown in FIG. 6B. Compared with the case where it is large, the case where the convex portion 35RB is small is larger as shown in FIG. Therefore, the light Ray10 incident on the color filter 36R from the small convex portion 35RB as shown in FIG. 6A becomes the light Ray10 incident on the color filter 36R from the large convex portion 35RB as shown in FIG. 6B. In comparison, the traveling direction is bent more. As a result, the light Ray10 incident on the color filter 36R through the small convex portion 35RB as shown in FIG. 6A passes through the convex portion 35RB having a large size as shown in FIG. 6B. Compared to the light incident on 36R, the light tends to gather at the center in the left-right direction of the sub-pixel 18R.

  FIG. 7 is a diagram showing the wavelength dependence of the refractive index of the color filter 36 and the refractive index of the convex portion 35. In FIG. 7, the solid line N-R indicates the wavelength dependency of the refractive index of the red color filter 36R, and the one-dot chain line NG indicates the wavelength dependency of the refractive index of the green color filter 36G. -B indicates the wavelength dependency of the refractive index of the blue color filter 36B, and the broken line N-BK indicates the wavelength dependency of the refractive index of the transparent convex portion 35.

  As shown in FIG. 7, when the blue color filter 36 </ b> B transmits light having a peak wavelength indicating blue, the refractive index of the blue color filter 36 </ b> B and the light having the peak wavelength indicating blue on the transparent convex portion 35. The refractive index difference NB-BK with respect to the refractive index of the convex portion 35 when the light is transmitted is about 0.02. The refractive index of the green color filter 36G when green light having a peak wavelength indicating green is transmitted through the green color filter 36G, and the refractive index when the light having a peak wavelength indicating green is transmitted through the transparent convex portion 35. The refractive index difference NG-BK with respect to the refractive index of the convex portion 35 is about 0.06. The refractive index of the red color filter 36R when the red color filter 36R transmits light having a peak wavelength indicating red, and the transparent index 35 when the light having the peak wavelength indicating red is transmitted. The refractive index difference N-R-BK with respect to the refractive index of the convex portion 35 is about 0.2. That is, the refractive index difference NG-BK is larger than the refractive index difference NB-BK, and the refractive index difference NR-BK is larger than the refractive index difference NG-BK.

  As described above, since the refractive index difference between the convex portion 35 and the color filter 36 is different for each color of the color filter 36, the degree of bending in the traveling direction of the light incident from the convex portion 35 to the color filter 36 is also different from the color. Different for each color of the filter 36. More specifically, the light incident on the green color filter 36G from the convex portion 35 is bent larger than the light incident on the blue color filter 36B from the convex portion 35, and is incident on the red color filter 36R from the convex portion 35. The light to be bent is larger than the light incident on the green color filter 35G from the convex portion 35.

  Then, when comparing each light incident on the red color filter 36R, the green color filter 36G, and the blue color filter 36 from the convex portion 35 having the same size, the light incident on the green color filter 36 is blue. It is easier to gather at the center of the sub-pixel 18 than the light incident on the color filter 36B, and the light incident on the red color filter 36R is closer to the center of the sub-pixel 18 than the light incident on the green color filter 36G. It becomes easy to gather.

  Further, as shown in FIGS. 6A and 6B, the light is output from the organic EL element 30 of the red sub-pixel 18R in the vicinity of the boundary between the second sealing layer 34c, the color filter 36, and the convex portion 35RB. Assume that a part of the light Ray 20 is incident. When the convex portion 35RB is small as shown in FIG. 6A, the light Ray20 enters the color filter 36 from the second sealing layer 34c, passes through the vicinity of the boundary with the convex portion 35RB in the color filter 36R, and is sub- The process proceeds away from the center of the pixel 18R. On the other hand, when the convex portion 35RB is large as shown in FIG. 6B, the light Ray20 is reflected at the boundary between the second sealing layer 34c, the color filter 36, and the convex portion 35, passes through the color filter 36R, The process proceeds so as to approach the center of the pixel 18R.

  Therefore, when the convex portion 35RB is small, it is presumed that the light Ray10 and Ray20 do not advance to a position just above the convex portion 35RB on the color filter 36R as compared with the case where the convex portion 35RB is large. The part where light Ray10 and Ray20 do not advance becomes dark. Thus, when the size of the convex portion 35 is small, a darkened portion appears, and this darkened portion causes display unevenness.

  As described above, the light incident on the red color filter 36R from the convex portion 35 is compared with the light incident on the green color filter 36G from the convex portion 35 and the light incident on the blue color filter 36B from the convex portion 35. It becomes easy to gather at the center of the sub-pixel 18. For this reason, when the size of the convex portions 35RB and 35RG at the boundary that separates the red color filter 36R is small, the size of the convex portion 35GB between the green color filter 36G and the blue color filter 36B is small. It is presumed that display unevenness is likely to occur compared to the case where the size is small.

  As described above, in the organic EL device 2000, since the convex portion 35RB between the red sub-pixel 18R and the blue sub-pixel 18B is likely to vary in size and the like, the red sub-pixel 18R and the blue sub-pixel are easily generated. The magnitude | size of convex part 35RB between 18B may become small with respect to a target value. In the organic EL device 2000, the convex portion 35RB between the red sub-pixel 18R and the blue sub-pixel 18B is smaller than the standard, so that the light of the red sub-pixel 18R is at the center of the red sub-pixel 18R. It is presumed that the display becomes uneven and display unevenness occurs.

1-2-2: Variation in Opening Between Convex Portions FIG. 8 is an enlarged cross-sectional view showing the color filter 36 and the convex portion 35. In FIG. 8A, the convex portion 35RG between the red sub-pixel 18R and the green sub-pixel 18G has a target size, while the area between the red sub-pixel 18R and the blue sub-pixel 18B. The convex portion 35RB is smaller than the target size and the height on the second sealing layer 34c is low. FIG. 8B shows that the convex portion 35RG between the red sub-pixel 18R and the green sub-pixel 18G and the convex portion 35RB between the red sub-pixel 18R and the blue sub-pixel 18B are the target. It shows a case where the size is high and the height on the second sealing layer 34c is the target height.

  Between the red sub-pixel 18R and the blue sub-pixel 18B in the organic EL device 2000, the red color filter 36R is formed after the blue color filter 36B is formed. Further, between the red sub-pixel 18R and the green sub-pixel 18G in the organic EL device 2000, the red color filter 36R is formed after the green color filter 36G is formed.

  As shown in FIG. 8B, when the convex portion 35RG between the red sub-pixel 18R and the green sub-pixel 18G has a target height, the red color filter 36R on the surface of the convex portion 35RG The boundary between the area in contact with and the area in contact with the green color filter 36G is located near the top of the convex portion 35RG. Similarly, when the convex portion 35RB between the red sub-pixel 18R and the blue sub-pixel 18B has a target height, an area in contact with the blue color filter 36B on the surface of the convex portion 35RB and the red color filter The boundary of the region in contact with 36R is located near the top of the convex portion 35RB. For this reason, in the case of FIG. 8B, the opening in the red sub-pixel 18R is a range from the vicinity of the top of the convex portion 35RG to the vicinity of the top of the convex portion 35RB. The opening in the red sub-pixel 18R is an area where the red color filter 36 can output red light.

  On the other hand, when the convex portion 35RB between the red sub-pixel 18R and the blue sub-pixel 18B is lower than the target height, as shown in FIG. The filter 36B covers and the red color filter 36R covers a part of the blue color filter 36B covering the convex portion 35RB. Therefore, in the case of FIG. 8A, the opening in the red sub-pixel 18R is a range from the vicinity of the top of the convex portion 35RG to the right end (right end of the blue color filter 36B) in the convex portion 35RB.

  Thus, in the organic EL device 2000, when the size of the convex portion 35RB between the red sub-pixel 18R and the blue sub-pixel 18B is smaller than the target, the size of the convex portion 35RB is the target size. It is estimated that the aperture in the red sub-pixel 18R becomes narrower than in the case of FIG. In the organic EL device 2000, it is estimated that a darkened portion appears due to a narrow opening in the red sub-pixel 18R, and display unevenness occurs.

  There are two reasons for the display unevenness: the lens effect of the convex portion 35 and the variation in opening between the convex portions 35. The lens effect of the convex portion 35 is more than the variation in opening between the convex portions 35. Presumed to be the main.

2. First Embodiment FIG. 9 is a cross-sectional view showing a configuration of an organic EL device 100 according to a first embodiment of the present invention. FIG. 10 is a diagram showing the film thickness of each layer constituting the organic EL device 100. The organic EL device 100 of the present embodiment is different from the organic EL device 2000 which is the comparative example described above in that it has a cavity adjustment layer 60 instead of the cavity adjustment layer 50.

The cavity adjustment layer 60 is different from the cavity adjustment layer 50 in that a third adjustment layer 63B is provided between the second adjustment layer 52 and the pixel electrode 31B in the blue sub-pixel 18B. That is, in the organic EL device 100, the configuration of the red subpixel 18R and the green subpixel 18G is the same as that of the organic EL device 2000, and only the configuration of the blue subpixel 18B is different from the organic EL device 2000. Specifically, the third adjustment layer 63B is a layer made of silicon oxide (SiO ₂ ). The film thickness of the third adjustment layer 63B is 160 nm.

  In the red sub-pixel 18R, the optical distance d is determined by setting the value of m for determining the resonance order of the above formula (1) to 1, and the first adjustment layer 51, the second adjustment layer 52, and the third adjustment layer are determined. The film thickness of 53R is determined. Similarly to the red sub-pixel 18R, the green sub-pixel 18G also determines the optical distance d by setting the value of m to 1, and the film thicknesses of the first adjustment layer 51, the second adjustment layer 52, and the third adjustment layer 53G are the same. It has been decided. On the other hand, in the blue sub-pixel 18B of the organic EL device 100, the optical distance d is determined by setting the value of m for determining the resonance order of the above-described formula (1) to 2, and the first adjustment layer 51, The film thicknesses of the second adjustment layer 52 and the third adjustment layer 63B are determined. Specifically, the film thickness of the third adjustment layer 63B in the blue sub-pixel 18B is obtained by dividing the blue peak wavelength value (470 nm) by 2, and then the refractive index (1.46) of the third adjustment layer 63B. The result of dividing by was 160 nm.

  The film thickness difference between the film thickness of the cavity adjustment layer 60 of the red sub-pixel 18R and the film thickness of the cavity adjustment layer 60 of the green sub-pixel 18G is 50 nm, similar to that of the organic EL device 2000. Therefore, the film thickness difference between the film thickness of the cavity adjustment layer 60 in the red sub-pixel 18R and the film thickness of the cavity adjustment layer 60 in the green sub-pixel 18G (that is, the film thickness of the planarization layer 34b in the red sub-pixel 18R). And the thickness difference between the thickness of the planarizing layer 34b in the green subpixel 18G) and the thickness difference T of the planarizing layer 34b that changes the reflectance of the exposure light for forming the convex portion 35 by one period. It is about half the size.

  In the organic EL device 100, since the film thickness difference between the film thickness of the third adjustment layer 53R of the red sub pixel 18R and the film thickness of the third adjustment layer 63B of the blue sub pixel 18B is 50 nm, the red sub pixel The film thickness difference between the film thickness of the 18R cavity adjustment layer 50 and the film thickness of the cavity adjustment layer 50 of the blue sub-pixel 18B is 50 nm. Accordingly, the film thickness difference between the film thickness of the cavity adjustment layer 60 in the red sub-pixel 18R and the film thickness of the cavity adjustment layer in the blue sub-pixel 18B (that is, the film thickness of the planarizing layer 34b in the red sub-pixel 18R). The difference in film thickness from the film thickness of the flattening layer 34b in the blue sub-pixel 18B) is approximately the film thickness difference T in the flattening layer 34b that changes the reflectance of the exposure light for forming the convex portion 35 by one period. It is half the size.

  In the organic EL device 100, since the film thickness difference between the film thickness of the third adjustment layer 53G of the green sub-pixel 18G and the film thickness of the third adjustment layer 63B of the blue sub-pixel 18B is 100 nm, the green sub-pixel The film thickness difference between the film thickness of the 18G cavity adjustment layer 50 and the film thickness of the cavity adjustment layer 50 of the blue sub-pixel 18B is 100 nm. Accordingly, the film thickness difference between the film thickness of the cavity adjustment layer 60 in the green sub-pixel 18G and the film thickness of the cavity adjustment layer 60 in the blue sub-pixel 18B (the film thickness of the planarization layer 34b in the green sub-pixel 18G and the blue color). The difference in film thickness from the film thickness of the flattening layer 34b in the sub-pixel 18B) is approximately the same as the film thickness difference in the flattening layer 34b that changes the reflectance of the exposure light for forming the convex portion 35 for one period. It has become.

  The cavity adjustment layer 60 in the organic EL device 100 can be manufactured by, for example, a manufacturing method similar to the manufacturing method of the insulating layer of Patent Document 2.

  As described above, the reflectance of the exposure light for forming the convex portion 35 in the planarization layer 34b periodically changes when the thickness of the planarization layer 34b is changed. In the organic EL device 100 according to the present embodiment, the film thickness difference of the cavity adjustment layer 60 between the red sub-pixel 18R and the blue sub-pixel 18B is determined based on the reflectance of the exposure light for forming the convex portion 35. Is about half of the film thickness difference T of the planarizing layer 34b that changes one cycle. Since the planarization layer 34b eliminates the step between the sub-pixels 18, the difference in film thickness of the cavity adjustment layer 60 between the red sub-pixel 18R and the blue sub-pixel 18B is the flattening layer 34b in the red sub-pixel 18R. Corresponds to the film thickness difference between the thickness of the flattening layer 34b in the blue sub-pixel 18B. For this reason, the above-described condition is applied to the film thickness difference of the planarization layer 34b between the red sub-pixel 18R and the blue sub-pixel 18B. That is, the reflectance of the exposure light in the flattening layer 34b of the red sub-pixel 18R and the reflectance of the exposure light in the flattening layer 34b of the blue sub-pixel 18B are shifted by a half cycle. Thereby, in the organic EL device 100, the exposure energy of the photosensitive resin layer 45 at a position between the red sub-pixel 18R and the blue sub-pixel 18B is substantially constant regardless of the film thickness variation of the planarization layer 34b. It becomes.

  In the organic EL device 100 of the present embodiment, even if the thickness of the planarization layer 34b varies from one organic EL device 100 to another, the photosensitive resin layer at a position between the red sub-pixel 18R and the blue sub-pixel 18B. The variation in the exposure energy of 45 can be suppressed, and the variation in the size of the convex portion 35RB between the red sub-pixel 18R and the blue sub-pixel 18B can be suppressed. As a result, according to the organic EL device 100 of the present embodiment, display unevenness can be reduced.

  The thickness difference of the cavity adjustment layer 60 between all the sub-pixels 18 is set to about half of the thickness difference of the planarization layer 34b that changes the reflectance of the exposure light for forming the convex portion 35 for one period. Is most preferred. However, in the case where the sub-pixels 18 of three colors are provided, it is difficult to make the condition between all the sub-pixels 18.

  Therefore, in the organic EL device 100 of the present embodiment, in consideration of the lens effect of the convex portion 35 in particular, the color filter 36 having the largest refractive index difference between the refractive index of the convex portion 35 and the refractive index of the color filter 36 is prioritized. The film thickness difference of the cavity adjustment layer 60 between the sub-pixel 18 to which the color filter 36 belongs and the sub-pixel 18 to which the color filter 36 adjacent to the color filter 36 belongs is exposed to form the convex portion 35. The light reflectance is set to about half of the film thickness difference of the planarizing layer 34b that changes one period. Specifically, since the color filter 36 having the largest refractive index difference from the convex portion 35 is the red color filter 36R, in the organic EL device 100, between the red sub-pixel 18R and the green sub-pixel 18G. The film thickness difference of the cavity adjustment layer 60 and the film thickness difference of the cavity adjustment layer 60 between the red sub-pixel 18R and the blue sub-pixel 18B are defined as the reflectance of the exposure light for forming the convex portion 35. The thickness of the planarizing layer 34b whose period is changed is about half of the film thickness difference T.

  In the organic EL device 100 of this embodiment, the film thickness difference of the cavity adjustment layer 60 between the sub-pixels 18 is changed to the film thickness of the planarization layer 34b that changes the reflectance of the exposure light for forming the convex portion 35 by one period. In the case where the difference is inevitably equal to the difference, the film thickness difference is applied between the sub-pixels 18 to which the color filter 36 having a small refractive index difference from the convex portion 35 belongs. Specifically, since the green color filter 36G and the blue color filter 36B have a smaller refractive index difference from the convex portion 35 than the red color filter 36R, in the organic EL device 100, the green sub-pixel 18G The film thickness difference of the cavity adjustment layer 60 between the blue sub-pixel 18B and the film thickness difference T of the flattening layer 34b that changes the reflectance of the exposure light for forming the convex portion 35 for one period is approximately the same. did. As a result, in the organic EL device 100, the photosensitive resin layer at a position between the green sub-pixel 18G and the blue sub-pixel 18B in accordance with the variation in the thickness of the planarization layer 34b for each organic EL device 100. There is a possibility that the exposure energy of 45 varies, and the size of the convex portion 35GB between the green sub-pixel 18G and the blue sub-pixel 18B may vary. However, since the difference in refractive index between the green color filter 36G and the blue color filter 36B is smaller than that of the convex portion 35 compared to the red color filter 36R, the convex portion 35 is located between the convex portion 35 and the green color filter 36G. The lens effect of the convex portion 35 between the blue color filter 36B and the blue color filter 36B is smaller than the lens effect of the convex portion 35 between the convex portion 35 and the red color filter 36R. For this reason, in the organic EL device 100, even if the size or the like of the convex portion 35GB between the green sub-pixel 18G and the blue sub-pixel 18B varies, the organic EL device 100 does not come to be visually recognized as display unevenness.

  Further, in the organic EL device 100, the cavity adjustment layer 60 between the sub-pixels 18 varies depending on the film thickness in the third adjustment layers 53R, 53G, and 63B, which are layers having a common refractive index across the red, green, and blue sub-pixels 18. A film thickness difference is realized. For this reason, in the organic EL device 100, it is possible to suppress an increase in manufacturing steps required to realize the difference in film thickness of the cavity adjustment layer 60 between the sub-pixels 18. In addition, the third adjustment layers 53R, 53G, and 63B are made of silicon oxide, so that etching is easy. For this reason, in the organic EL device 100, the film thickness difference of the cavity adjustment layer 60 between the sub-pixels 18 can be easily adjusted.

  The difference in film thickness of the planarizing layer 34b that changes the reflectance of the exposure light for forming the convex portion 35 by one period is as shown in the above formula (2). It depends on the wavelength and the refractive index of the planarization layer 34b. For this reason, in the case where the organic EL device 100 is manufactured by using light other than i-line as exposure light in the convex forming step, or when the organic EL device 100 is manufactured by changing the material of the planarizing layer 34b, The wavelength of the exposure light and the refractive index of the planarization layer 34b are determined by using the above formula (2) to determine a value about half of the film thickness difference T of the planarization layer 34b, and the result and the above formula (1). The specific film thicknesses of the third adjustment layers 53R, 53G, and 63B may be determined so as to satisfy the optical resonance condition (1).

3. Second Embodiment FIG. 11 is a cross-sectional view showing a configuration of an organic EL device 100A according to a second embodiment of the present invention. FIG. 12 is a diagram showing the film thickness of each layer constituting the organic EL device 100A. The organic EL device 100A of the present embodiment is different from the organic EL device 100 of the first embodiment in that a cavity adjustment layer 70 is provided instead of the cavity adjustment layer 60.

  The cavity adjustment layer 70 includes a second adjustment layer 72R instead of the second adjustment layer 52 and the third adjustment layer 63R between the first adjustment layer 51 of the red sub-pixel 18R and the pixel electrode 31R. The cavity adjustment layer according to the first embodiment in that a third adjustment layer 73B is provided instead of the second adjustment layer 52 and the third adjustment layer 63B between the first adjustment layer 51 and the pixel electrode 31B of the sub-pixel 18B. Different from 60. That is, in the organic EL device 100A, the configuration of the green sub-pixel 18G is the same as that of the organic EL device 100, and only the configuration of the red sub-pixel 18R and the blue sub-pixel 18B is different from the organic EL device 100.

Specifically, the second adjustment layer 72R in the red sub-pixel 18R is a layer made of silicon nitride (SiN). The film thickness of the second adjustment layer 72R is 125 nm. Specifically, the third adjustment layer 73B in the blue sub-pixel 18B is a layer made of silicon oxide (SiO ₂ ). The film thickness of the third adjustment layer 73B is 75 nm.

  In the red subpixel 18R, it is necessary to increase the optical distance (optical path length) between the reflective layer 25 and the counter electrode 33 in the organic EL element 30 as compared with the green subpixel 18G. Here, the refractive index of silicon oxide is 1.46, whereas the refractive index of silicon nitride is 2. Therefore, in the red sub-pixel 18R of the organic EL device 100A, the second adjustment layer 72R made of silicon nitride having a refractive index larger than that of silicon oxide is increased without providing the third adjustment layer, so that the organic The optical path length in the EL element 30 is gained, and the physical film thickness of the entire cavity adjustment layer 70 is reduced. Thereby, in the organic EL device 100A, the film thickness difference of the cavity adjustment layer 70 between the red sub-pixel 18R and the green sub-pixel 18G while satisfying the optical resonance condition of the organic EL element 30 of the red sub-pixel 18R. That is, the difference in film thickness of the planarizing layer 34b can be reduced. Specifically, in the organic EL device 100A, the film thickness difference of the planarization layer 34b between the red sub-pixel 18R and the green sub-pixel 18G is 20 nm.

  In the blue sub-pixel 18B, it is necessary to shorten the optical distance (optical path length) between the reflective layer 25 and the counter electrode 33 in the organic EL element 30 as compared with the green sub-pixel 18G. Therefore, in the blue sub-pixel 18B of the organic EL device 100A, the second adjustment layer is not provided, and the third adjustment layer 73B made of silicon oxide having a refractive index smaller than that of silicon nitride is increased to increase the film thickness. The optical path length in the EL element 30 is gained, and the physical film thickness of the entire cavity adjustment layer 70 is increased. Thereby, in the organic EL device 100A, the film thickness difference of the cavity adjustment layer 70 between the green sub-pixel 18G and the blue sub-pixel 18B while satisfying the optical resonance condition of the organic EL element 30 of the blue sub-pixel 18B. That is, the difference in film thickness of the planarizing layer 34b can be reduced. Specifically, in the organic EL device 100A, the film thickness difference of the planarization layer 34b between the green sub-pixel 18G and the blue sub-pixel 18B is 30 nm.

  In the organic EL device 100A, the film thickness difference of the cavity adjustment layer 70 between the red sub-pixel 18R and the green sub-pixel 18G is 20 nm, and the cavity between the green sub-pixel 18G and the blue sub-pixel 18B. Since the film thickness difference of the adjustment layer 70 is 30 nm, the cavity adjustment layer 70 (that is, the film thickness difference of the planarization layer 34b) between the red sub-pixel 18R and the blue sub-pixel 18B is 50 nm. Accordingly, the film thickness difference between the cavity adjustment layer 70 of the red sub-pixel 18R and the cavity adjustment layer 70 of the blue sub-pixel 18B (that is, the flattening between the red sub-pixel 18R and the blue sub-pixel 18B). The film thickness difference of the layer 34b) is about half the film thickness difference T of the planarization layer 34b that changes the reflectance of the exposure light for forming the convex portion 35 by one period.

  As described above, in the organic EL device 100A of the present embodiment, the thickness of the planarization layer 34b between the sub-pixels 18 is adjusted by adjusting the thickness of each of the plurality of materials having different refractive indexes in the cavity adjustment layer 70. Realize the difference.

  The organic EL device 100A according to the present embodiment uses the difference in film thickness of the cavity adjustment layer 70 between the red sub-pixel 18R and the blue sub-pixel 18B as the reflectance of exposure light for forming the convex portion 35. This is the same as the organic EL device 100 of the first embodiment in that it is about half the thickness difference T of the planarizing layer 34b whose period is changed. Therefore, also in the organic EL device 100A of the present embodiment, the same effect as that of the first embodiment can be obtained.

  Further, in the organic EL device 100A, since the film thickness difference of the cavity adjustment layer 70 between the red sub-pixel 18R and the green sub-pixel 18G is 20 nm, reflection of exposure light for forming the convex portion 35 is reflected. This is about a quarter of the film thickness difference T of the planarizing layer 34b that changes the rate by one period. Similarly, in the organic EL device 100A, since the film thickness difference of the cavity adjustment layer 70 between the green sub-pixel 18G and the blue sub-pixel 18R is 30 nm, the exposure light for forming the convex portion 35 is reduced. This is about one-fourth of the film thickness difference T of the flattening layer 34b that changes the reflectance by one period. Therefore, in the organic EL device 100A, the position between the red sub-pixel 18R and the green sub-pixel 18G and the green sub-pixel according to the thickness of the planarization layer 34b varying for each organic EL device 100A. The exposure energy of the photosensitive resin layer 45 at the position between 18G and the blue sub-pixel 18B varies, and the convex portion 35RG between the red sub-pixel 18R and the green sub-pixel 18G and the green sub-pixel 18G and the blue There is a possibility that the size or the like of the convex portion 35GB between the sub-pixel 18B and the sub-pixel 18B varies somewhat. However, in the organic EL device 100A, the size of the convex portion 35RG between the red subpixel 18R and the green subpixel 18G and the size of the convex portion 35GB between the green subpixel 18G and the blue subpixel 18B, etc. Even if it fluctuated, it did not come to be visually recognized as display unevenness.

4). Third Embodiment FIG. 13 is a diagram showing the film thickness of each layer constituting an organic EL device according to a third embodiment of the present invention. In the organic EL device of the present embodiment, the film thickness of the third adjustment layer 53G in the green sub-pixel 18G is the same as the film thickness of the third adjustment layer 73B in the blue sub-pixel 18B, and The second adjustment layer 52 is different from the organic EL device 100A of the second embodiment in that the film thickness of the adjustment layer 52 is reduced. Specifically, in the organic EL device of the present embodiment, the film thickness of the third adjustment layer 53G in the green sub-pixel 18G is changed from 65 nm to 75 nm, and the film thickness of the second adjustment layer 52 in the green sub-pixel 18G is changed. It differs from the organic EL device 100A in that it is changed from 45 nm to 35 nm. The increase in the optical path length caused by increasing the thickness of the third adjustment layer 53G is offset by reducing the thickness of the second adjustment layer 52, and the organic EL element 30 of the green sub-pixel 18G is The optical resonance condition is satisfied.

  Also in this embodiment, the same effect as the first and second embodiments can be obtained.

  In the organic EL device of the present embodiment, the material and film thickness of the third adjustment layer 53G of the green sub-pixel 18G and the material and film thickness of the third adjustment layer 73B of the blue sub-pixel 18B are common. ing. For this reason, in the organic EL device of this embodiment, the manufacturing process of the third adjustment layer 53G of the green sub-pixel 18G and the third adjustment layer 73B of the blue sub-pixel 18B can be simplified.

  In the organic EL device of the present embodiment, the third adjustment layer is shared by a part of each sub-pixel 18. However, in the organic EL device, the second adjustment layer may be shared by a part of each sub-pixel 18.

5. Fourth Embodiment 5-1: Entire Organic EL Device Next, the entire configuration of the organic EL device 100 of the first embodiment will be described. FIG. 14 is an equivalent circuit diagram showing an electrical configuration of the organic EL device 100. FIG. 15 is a plan view showing the configuration of the organic EL device 100. FIG. 16 is a schematic plan view showing the arrangement of the sub-pixels 18.

  As shown in FIG. 14, the organic EL device 100 includes a plurality of scanning lines 12 and a plurality of data lines 13 that intersect each other, a plurality of power supply lines 14 that are parallel to each of the plurality of data lines 13, and a plurality of power lines 14 A scanning line driving circuit 16 to which the scanning lines 12 are connected and a data line driving circuit 15 to which a plurality of data lines 13 are connected are provided. In addition, the organic EL device 100 includes a plurality of sub-pixels 18 that are light-emitting pixels arranged in a matrix corresponding to the intersections of the plurality of scanning lines 12 and the plurality of data lines 13.

  The sub pixel 18 includes an organic EL element 30 as a light emitting element and a pixel circuit 20 that controls driving of the organic EL element 30.

  As described above, the organic EL element 30 includes the pixel electrode 31, the counter electrode 33, and the functional layer 32 provided between the pixel electrode 31 and the counter electrode 33. Such an organic EL element 30 can be electrically expressed as a diode.

  The pixel circuit 20 includes a switching transistor 21, a storage capacitor 22, and a driving transistor 23. The two transistors 21 and 23 can be configured using, for example, an n-channel or p-channel thin film transistor (TFT) or a MOS transistor.

  The gate of the switching transistor 21 is connected to the scanning line 12, one of the source or drain is connected to the data line 13, and the other of the source or drain is connected to the gate of the driving transistor 23. One of the source and drain of the driving transistor 23 is connected to the pixel electrode 31 of the organic EL element 30, and the other of the source and drain is connected to the power supply line 14. A storage capacitor 22 is connected between the gate of the driving transistor 23 and the power supply line 14.

  When the scanning line 12 is driven and the switching transistor 21 is turned on, the potential based on the image signal supplied from the data line 13 at that time is held in the storage capacitor 22 via the switching transistor 21. The on / off state of the driving transistor 23 is determined according to the potential of the storage capacitor 22, that is, the gate potential of the driving transistor 23. When the driving transistor 23 is turned on, a current corresponding to the gate potential flows from the power supply line 14 to the functional layer 32 sandwiched between the pixel electrode 31 and the counter electrode 33 via the driving transistor 23. The organic EL element 30 emits light according to the current flowing through the functional layer 32.

  As shown in FIG. 15, the organic EL device 100 has an element substrate 10. The element substrate 10 is provided with a display area E0 (indicated by a one-dot chain line in the drawing) and a non-display area E3 outside the display area E0. The display area E0 has an actual display area E1 (indicated by a two-dot chain line in the figure) and a dummy area E2 surrounding the actual display area E1.

  In the actual display area E1, subpixels 18 as light emitting pixels are arranged on a matrix. As described above, the sub-pixel 18 includes the organic EL element 30 as a light emitting element, and blue (B), green (G), red (in accordance with the operation of the switching transistor 21 and the driving transistor 23). R) can emit light of any color.

  In the present embodiment, the sub-pixels 18 that can emit light of the same color are arranged in the first direction, and the second direction in which the sub-pixels 18 that can emit light of different colors intersect (orthogonal) the first direction. The so-called stripe-type sub-pixels 18 are arranged in an array. Hereinafter, the first direction is referred to as the Y direction, and the second direction is referred to as the X direction. The arrangement of the sub-pixels 18 on the element substrate 10 is not limited to the stripe method, and may be a mosaic method or a delta method.

  The dummy area E2 is provided with a peripheral circuit mainly for causing the organic EL elements 30 of the sub-pixels 18 to emit light. For example, as shown in FIG. 15, a pair of scanning line drive circuits 16 are provided extending in the Y direction at positions sandwiching the actual display region E1 in the X direction. An inspection circuit 17 is provided between the pair of scanning line driving circuits 16 at a position along the actual display area E1.

  A flexible circuit board (hereinafter referred to as FPC) 43 for electrical connection with an external drive circuit is connected to one side (lower side in the figure) parallel to the X direction of the element substrate 10. . A driving IC 44 connected to the peripheral circuit on the element substrate 10 side through the wiring of the FPC 43 is mounted on the FPC 43. The driving IC 44 includes the data line driving circuit 15 described above, and the data line 13 and the power supply line 14 on the element substrate 10 side are electrically connected to the driving IC 44 via the FPC 43.

  Between the display area E0 and the outer edge of the element substrate 10, that is, in the non-display area E3, for example, a wiring 29 for applying a potential to the counter electrode 33 of the organic EL element 30 of each subpixel 18 is formed. The wiring 29 is provided on the element substrate 10 so as to surround the display area E0 except for the side portion of the element substrate 10 to which the FPC 43 is connected.

  Next, the planar arrangement of the sub-pixels 18, particularly the planar arrangement of the pixel electrodes 31 will be described with reference to FIG. 16. As shown in FIG. 16, the sub-pixel 18B from which blue (B) light emission is obtained, the sub-pixel 18G from which green (G) light emission is obtained, and the sub-pixel 18R from which red (R) light emission is obtained are sequentially arranged in the X direction. Arranged. The sub-pixels 18 that can emit light of the same color are arranged adjacent to each other in the Y direction. The arrangement pitch of the three sub-pixels 18B, 18G, and 18R arranged in the X direction is less than 5 μm. Sub-pixels 18B, 18G, and 18R are arranged at intervals of 0.5 μm to 1.0 μm in the X direction. The arrangement pitch of the sub-pixels 18B, 18G, and 18R in the Y direction is less than about 10 μm.

  The pixel electrode 31 in the sub-pixel 18 has a substantially rectangular shape, and the longitudinal direction is arranged along the Y direction. The pixel electrode 31 may be referred to as pixel electrodes 31B, 31G, and 31R corresponding to the emission color. An insulating film 27 is formed so as to cover the outer edges of the pixel electrodes 31B, 31G, and 31R. Thereby, an opening 27a is formed on each of the pixel electrodes 31B, 31G, and 31R, and each of the pixel electrodes 31B, 31G, and 31R is exposed in the opening 27a. The planar shape of the opening 27a is also substantially rectangular.

In FIG. 3, the arrangement of the sub-pixels 18B, 18G, and 18R of different colors is in the order of blue (B), green (G), and red (R) from the left side in the X direction, but is not limited thereto. It is not something. For example, in the X direction, the order may be red (R), green (G), and blue (B) from the left side.
9 of 1st Embodiment has shown sectional drawing when the organic electroluminescent apparatus 100 is cut | disconnected along the AA 'line of FIG.

6). Next, an example of an electronic device using the organic EL device 100 of the first embodiment will be described. FIG. 17 is a schematic diagram illustrating a head mounted display (HMD) which is an example of an electronic apparatus. As shown in FIG. 17, the head mounted display 1000 has two display units 1001 provided corresponding to the left and right eyes. The observer M can see characters and images displayed on the display unit 1001 by wearing the head mounted display 1000 on the head like glasses. For example, if an image in consideration of parallax is displayed on the left and right display units 1001, a stereoscopic video can be viewed and enjoyed.

  The display unit 1001 includes the organic EL device 100 according to the first embodiment. Therefore, it is possible to provide a small and lightweight head mounted display 1000 that has excellent display quality and is excellent in cost performance.

  The head mounted display 1000 is not limited to having the two display units 1001, and may be configured to include one display unit 1001 corresponding to either the left or right.

  The electronic device on which the organic EL device 100 is mounted is not limited to the head mounted display 1000. For example, an electronic device having a display unit such as a personal computer, a portable information terminal, a navigator, a viewer, or a head-up display can be given.

7). Modifications The present invention is not limited to the above-described embodiment, and various modifications described below are possible. Moreover, you may combine each embodiment and the modification which were mentioned above suitably.

(1) In the organic EL device 100 of the first embodiment, the difference in film thickness of the cavity adjustment layer 60 between the red sub-pixel 18R and the blue sub-pixel 18B is determined by the exposure light for forming the convex portion 35. The reflectance was set to about half of the film thickness difference T of the flattening layer 34b that changes one cycle. However, the film thickness difference of the cavity adjustment layer 60 is not limited to that between the red sub-pixel 18R and the blue sub-pixel 18B. The film thickness difference of the cavity adjustment layer 60 (flattening layer 34b) between at least one of the sub-pixels 18 may be set as the above-described condition. This is because even if Patent Documents 1 to 3 are combined, the technical idea of setting the difference in film thickness of the cavity adjustment layer 60 to the above-described condition cannot be conceived. However, the sub-pixel 18 (specifically, the red sub-pixel 18R) to which the color filter 36 having the largest refractive index difference between the refractive index of the convex portion 35 and the refractive index of the color filter 36 belongs, and the sub-pixel 18 are adjacent to each other. It is more preferable that the difference in film thickness of the cavity adjustment layer 60 is set as described above with respect to at least one sub-pixel 18. In the color filter 36 in which the refractive index difference between the refractive index of the convex portion 35 and the refractive index of the color filter 36 is the largest, when the variation in the size or the like of the convex portion 35 occurs, the influence of being visually recognized as display unevenness is large. Because.

(2) This invention can be understood as a manufacturing method for manufacturing the organic EL device shown in each of the above embodiments. That is, the manufacturing method of the organic EL device according to the present invention includes an organic EL element step of forming a plurality of organic EL elements on a substrate, a sealing step of covering and sealing the plurality of organic EL elements, Corresponding to the organic EL element, at least a red, green, and blue colored layer is formed on the sealing layer, and a step between the sealing step and the coloring step, each having a different color A projecting portion forming step of separating the colored layers and forming a projecting portion having a height on the sealing layer lower than that of the colored layer by exposure. The organic EL element process includes a pixel electrode forming process and a counter electrode forming process for forming a pixel electrode and a counter electrode sandwiching an organic light emitting layer, and a reflective layer disposed on the opposite side of the counter electrode as viewed from the pixel electrode A reflective layer forming step of forming a reflective layer; and an optical distance between the counter electrode and the reflective layer according to an optical resonance condition for each color of the colored layer. A cavity adjusting layer forming step of forming a cavity adjusting layer to be obtained. The sealing step includes a planarization layer forming step of forming a planarization layer that planarizes the sealing layer. In the cavity adjustment layer forming step, the difference in film thickness of each cavity adjustment layer corresponding to the two types of colored layers divided by the protrusions is determined using the exposure light used for forming the protrusions as the protrusions. Reflectance, which is the ratio of the return light to the original exposure light when passing through the photosensitive resin layer, which is the material, and being reflected in the lower layer of the photosensitive resin layer and returning to the photosensitive resin layer as return light In the periodic dependence on the change in the film thickness of the flattening layer, the reflectance is reduced to about half the film thickness difference in the flattening layer that changes the reflectivity by one period. According to this manufacturing method, it is possible to manufacture an organic EL device in which the display unevenness shown in the above embodiments is reduced.

100, 100A, 2000 ... Organic EL device, 18, 18R, 18G, 18B ... Subpixel, 30 ... Organic EL element, 25 ... Reflective layer, 31, 31R, 31G, 31B ... Pixel electrode, 32 ... Functional layer, 33 ... Counter electrode, 34 ... sealing layer, 34a ... first sealing layer, 34b ... flattening layer, 34c ... second sealing layer, 35, 35RB, 35RG, 35GB ... convex, 36, 36R, 36G, 36B ... Color filter, 50, 60, 70 ... cavity adjustment layer, 51 ... first adjustment layer, 52, 72R ... second adjustment layer, 53G, 53R, 63B, 73B ... third adjustment layer, 1000 ... head mounted display.

Claims (10)

A plurality of organic EL elements disposed on a substrate;
A sealing layer that covers and seals the plurality of organic EL elements;
A plurality of colored layers formed on the sealing layer in a one-to-one correspondence with the plurality of organic EL elements;
Formed by exposure on the sealing layer, each dividing the colored layer of a different color, and having a convex portion whose height on the sealing layer is lower than the colored layer,
Each of the plurality of organic EL elements is
A pixel electrode and a counter electrode sandwiching the organic light emitting layer,
A reflective layer disposed on the opposite side of the counter electrode from the pixel electrode;
A cavity adjusting layer that is disposed between the pixel electrode and the reflective layer and makes an optical distance between the counter electrode and the reflective layer in accordance with an optical resonance condition for each color of the colored layer; Have
The sealing layer includes a planarizing layer that flattens the sealing layer,
The exposure light used for forming the convex portion passes through the photosensitive resin layer that is the material of the convex portion, is reflected by the lower layer of the photosensitive resin layer, and returns to the photosensitive resin layer. When the ratio of the return light to the original exposure light when returning is taken as the reflectance,
The film thickness difference of each cavity adjustment layer corresponding to the two types of colored layers divided by the convex portion is about half of the film thickness difference of the planarization layer that changes the reflectance by one period,
An organic EL device characterized by that. The thickness of the cavity adjusting layer corresponding to the colored layer having the largest refractive index difference from the refractive index of the convex portion among the colored layers of a plurality of colors and at least any of the colored layers having the largest refractive index difference 2. The film thickness difference of the cavity adjustment layer corresponding to the colored layer is about half of the film thickness difference of the planarizing layer that changes the reflectivity by one period. The organic EL device described in 1. The colored layer having the largest refractive index difference is a red colored layer,
The organic EL device according to claim 2, wherein at least one colored layer adjacent to the colored layer having the largest refractive index difference is a blue colored layer.   The film thickness difference of the planarization layer is a length obtained by dividing a half wavelength of the exposure light by a refractive index of the planarization layer, according to any one of claims 1 to 3. Organic EL device.   5. The organic EL device according to claim 1, wherein the plurality of organic EL elements include organic EL elements that satisfy optical resonance conditions having different orders of resonance. The cavity adjustment layer corresponding to each of the colored layers on both sides of any one of the convex portions has an adjustment layer having a common refractive index,
6. The organic EL device according to claim 1, wherein a thickness difference of the cavity adjustment layer is configured by a film thickness of the adjustment layer having a common refractive index. The cavity adjustment layer corresponding to the colored layer on one side divided in any one of the convex portions has a first adjustment layer having a first refractive index,
The cavity adjustment layer corresponding to the colored layer on the other side includes a second adjustment layer having a second refractive index different from the first refractive index,
6. The organic material according to claim 1, wherein a thickness difference of the cavity adjustment layer is configured by a thickness of the first adjustment layer and a thickness of the second adjustment layer. EL device.   The cavity adjustment layer other than the cavity adjustment layer that configures the film thickness difference of the cavity adjustment layer by the film thickness of the first adjustment layer and the film thickness of the second adjustment layer is the first adjustment layer or the second adjustment layer. The organic EL device according to claim 7, comprising a layer having a refractive index and a film thickness common to any one of the layers. A plurality of organic EL elements disposed on a substrate;
A sealing layer that covers and seals the plurality of organic EL elements;
Corresponding to the plurality of organic EL elements, at least red, green and blue colored layers formed on the sealing layer;
Formed by exposure on the sealing layer, respectively dividing the colored layers of different colors, and a convex portion having a height on the sealing layer lower than that of the colored layer;
Have
Each of the plurality of organic EL elements is
A pixel electrode and a counter electrode sandwiching the organic light emitting layer,
A reflective layer disposed on the opposite side of the counter electrode from the pixel electrode;
A cavity adjusting layer that is disposed between the pixel electrode and the reflective layer and makes an optical distance between the counter electrode and the reflective layer in accordance with an optical resonance condition for each color of the colored layer; Have
The sealing layer includes a planarizing layer that flattens the sealing layer,
An organic EL device characterized in that a film thickness of the cavity adjusting layer corresponding to the blue colored layer is larger than a film thickness of each cavity adjusting layer corresponding to each of the red and green colored layers. An organic EL element process for forming a plurality of organic EL elements on a substrate;
A sealing step of covering and sealing the plurality of organic EL elements;
Corresponding to the plurality of organic EL elements, a coloring step of forming at least a red, green, blue colored layer on the sealing layer;
A step between the sealing step and the coloring step, each of the colored layers having different colors is divided, and a convex portion whose height on the sealing layer is lower than that of the colored layer is formed by exposure. A convex forming step;
Have
The organic EL element process includes
A pixel electrode forming step and a counter electrode forming step of forming a pixel electrode and a counter electrode sandwiching the organic light emitting layer; and
A reflective layer forming step of forming a reflective layer disposed on the opposite side of the counter electrode from the pixel electrode;
A cavity adjusting layer is formed between the pixel electrode and the reflective layer, and makes an optical distance between the counter electrode and the reflective layer in accordance with an optical resonance condition for each color of the colored layer. A cavity adjusting layer forming step, and the sealing step includes a planarizing layer forming step of forming a planarizing layer for flattening the sealing layer,
In the cavity adjustment layer forming step,
The difference in film thickness of each cavity adjustment layer corresponding to the two types of colored layers divided by the convex portion is obtained by using a photosensitive resin layer in which the exposure light used for forming the convex portion is a material of the convex portion. The thickness of the planarizing layer having a reflectance that is a ratio of the return light to the original exposure light when passing through and reflected in the lower layer of the photosensitive resin layer and returning to the photosensitive resin layer The method of manufacturing an organic EL device, wherein the reflectance is changed to about half of the film thickness difference of the planarizing layer that changes the reflectance by one period in the periodic dependence on the change of the thickness.

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