JP2018054879A - Electro-optical device and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress an adverse effect of a temperature rise generated in a light-shielding layer on display characteristics.SOLUTION: An electro-optical device (1) includes: a counter substrate (12); an element substrate (11) having a switching element (111) controlling voltage application to a pixel electrode (112); a liquid crystal (15) interposed between the counter substrate (12) and the element substrate (11); a light-shielding layer (122) being provided between the counter substrate (12) and the liquid crystal (15) and light-shielding the switching element (111); and an enhanced reflection film (121) formed at a counter substrate (12) side of the light-shielding layer (122).SELECTED DRAWING: Figure 3

Description

  The present invention relates to an electro-optical device having a light shielding layer.

  An electro-optical device that controls application of a voltage to pixel electrodes arranged in a matrix by a switching element is known. For example, Patent Document 1 describes a technique for suppressing light irradiation to a switching element using a light shielding layer.

JP-A-6-214258

  In the technique described in Patent Document 1, for example, when a high-luminance light source is used, the display characteristics may be adversely affected by the temperature rise in the light shielding layer.

  On the other hand, the present invention provides a technique for suppressing the temperature rise generated in the light shielding layer from adversely affecting the display characteristics.

The present invention is provided between the counter substrate, the liquid crystal sandwiched between the counter substrate, the element substrate, the element substrate having a switching element that controls voltage application to the pixel electrode, and the counter substrate and the liquid crystal. An electro-optical device having a light-shielding layer that has an opening and shields the switching element, and an increased reflection film that is formed on the counter substrate side of the light-shielding layer.
According to this electro-optical device, the reflection efficiency at the light shielding layer can be improved, the temperature rise of the light shielding layer can be suppressed, and adverse effects on the display characteristics can be suppressed.

The aperture reflection film may not be formed in the opening.
According to this electro-optical device, it is possible to suppress a decrease in transmittance at the opening.

You may have the anti-reflective film formed in the surface by the side of the said element substrate of the said light shielding layer, and the side surface by the side of the said opening part.
According to this electro-optical device, irregular reflection on the side surface of the light shielding layer on the opening side can be suppressed.

The enhanced reflection film may be formed also in a region corresponding to the opening.
According to this electro-optical device, it is not necessary to partially remove the increased reflection film, and the increased reflection film can be easily formed on the light shielding layer.

The light shielding layer includes a metal layer formed on the surface on the side of the increased reflection film, the increased reflection film is formed on the first dielectric layer formed on the counter substrate side, and on the metal layer side, A second dielectric layer having a refractive index lower than that of the first dielectric layer may be included.
According to this electro-optical device, the reflectance in the metal layer can be improved.

The light shielding layer may be formed on the counter substrate.
According to this electro-optical device, a temperature rise in the light shielding layer formed on the counter substrate can be suppressed.

The present invention also provides an electronic apparatus having any one of the above electro-optical devices.
According to this electronic apparatus, the reflection efficiency of the light shielding layer can be improved, the temperature rise of the light shielding layer can be suppressed, and adverse effects on the display characteristics can be suppressed.

1 is a perspective view illustrating the structure of an electro-optical device 1 according to an embodiment. 3 is a schematic diagram illustrating an outline of a cross-sectional structure of the electro-optical device 1. FIG. The schematic diagram which shows the detailed structure which concerns on the example 1 of the opposing board | substrate 12. FIG. FIG. 4 is a schematic diagram showing a positional relationship between an opening 124 and a pixel electrode 112. The figure which illustrates the effect of the reflective reflection film. The schematic diagram which shows the detailed structure which concerns on the example 2 of the opposing board | substrate 12. FIG. The schematic diagram which shows the detailed structure which concerns on the example 3 of the opposing board | substrate 12. FIG. The schematic diagram which shows the detailed structure which concerns on the example 4 of the opposing board | substrate 12. FIG. The schematic diagram which shows the detailed structure which concerns on the example 5 of the opposing board | substrate 12. FIG. The schematic diagram which shows the detailed structure which concerns on the example 6 of the opposing board | substrate 12. FIG. The schematic diagram which shows the detailed structure which concerns on the example 7 of the opposing board | substrate 12. FIG. The schematic diagram which shows the detailed structure which concerns on the example 8 of the opposing board | substrate 12. FIG. The schematic diagram which shows the detailed structure which concerns on the example 9 of the opposing board | substrate 12. FIG. FIG. 6 is a diagram illustrating a projector 2100 according to an embodiment.

  FIG. 1 is a perspective view illustrating the structure of an electro-optical device 1 according to an embodiment. The electro-optical device 1 is a display device that displays an image according to a signal input from the outside, and is a liquid crystal panel in this example. The electro-optical device 1 includes an element substrate 11 and a counter substrate 12. Liquid crystal (not shown in FIG. 1) is sealed between the element substrate 11 and the counter substrate 12. A pixel electrode is formed on the element substrate 11 and a common electrode is formed on the counter substrate 12 (both are omitted in FIG. 1). When a voltage corresponding to the video signal is written to the pixel electrode, the liquid crystal shows an optical state corresponding to the written voltage. The electro-optical device 1 displays an image by controlling the optical state for each pixel.

  The element substrate 11 is longer in the Y direction than the counter substrate 12. Since the element substrate 11 and the counter substrate 12 are bonded together with the back side (h side) in the figure aligned, one side of the element substrate 11 on the near side (H side) projects from the counter substrate 12. A plurality of terminals 17 are provided in this protruding area. The terminal 17 is for receiving an input of a video signal, a power supply voltage, and various control signals from the outside.

  FIG. 2 is a schematic view illustrating the outline of the cross-sectional structure of the electro-optical device 1. FIG. 2 illustrates a cross section (Hh cross section in FIG. 1) parallel to the stacking direction of the element substrate 11 and the counter substrate 12. The electro-optical device 1 includes a liquid crystal 15 and a sealing material 19 in addition to the element substrate 11 and the counter substrate 12. The element substrate 11 and the counter substrate 12 are bonded together by a seal material 19. The sealing material 19 includes a spacer, and keeps a constant gap between the element substrate 11 and the counter substrate 12. The liquid crystal 15 is sealed in this gap. The liquid crystal 15 is, for example, a VA (Vertical Alignment) type liquid crystal. In this example, the electro-optical device 1 is a transmissive liquid crystal panel, and both the element substrate 11 and the counter substrate 12 are formed of a light-transmitting material such as glass or quartz. Light L from a light source (not shown) is incident from the counter substrate 12 side, modulated by the liquid crystal 15, and emitted from the element substrate 11 side.

  In the element substrate 11, a pixel electrode 112 is formed on a surface (surface on the liquid crystal 15 side) facing the counter substrate 12. The pixel electrode 112 is an electrode for applying an applied voltage for each pixel to the liquid crystal 15, and is formed of a light-transmitting conductive layer such as ITO (Indium Tin Oxide). The element substrate 11 is provided with a TFT (Thin Film Transistor) 111 as a switching element for controlling voltage application (data writing) to the pixel electrode 112. The TFT 111 is, for example, an n-channel field effect transistor. The source electrode of the TFT 111 is connected to a data line (not shown), the drain electrode is connected to the pixel electrode 112, and the gate electrode is connected to a scanning line (not shown). When a high level scanning signal is supplied to the scanning line, the TFT 111 is turned on, and the data line and the pixel electrode 112 are in a low impedance state. That is, data is written to the pixel electrode 112. When a low level scanning signal is supplied to the scanning line, the TFT 111 is turned off, and the data line and the pixel electrode 112 are in a high impedance state.

  In the counter substrate 12, a common electrode 123 is formed on the surface facing the element substrate 11 (surface on the liquid crystal 15 side). The common electrode 123 is common to a plurality of pixels and is formed of a light-transmitting conductive layer such as ITO. A voltage corresponding to the potential difference between the common electrode 123 and the pixel electrode 112 is applied to the liquid crystal 15, and the optical characteristics (transmittance in this example) change according to this voltage.

  A light shielding layer 122 is further formed on the counter substrate 12. The electro-optical device 1 forms an image by modulating light L from a light source (not shown) by the liquid crystal 15, but a portion where the pixel electrode 112 does not exist (a portion where the optical state of the liquid crystal 15 is not controlled). ) Does not contribute to image formation, it is desirable that the light L be blocked to improve display contrast. In addition, when light is applied to a semiconductor layer in which the TFT 111 and the like are formed, carriers are excited and the characteristics of the TFT 111 may be deteriorated. The light shielding layer 122 is provided to cope with these problems. Of course, the light L is necessary for image formation in the portion where the pixel electrode 112 exists, and the opening 124 is formed in the portion corresponding to the pixel electrode 112 in the light shielding layer 122. Light L from the light source is applied to the liquid crystal 15 through the opening 124, modulated by the liquid crystal 15, and then emitted through the pixel electrode 112 and the element substrate 11.

  When the brightness of the light source is increased, the temperature rise of the light shielding layer itself cannot be ignored due to light absorption in the light shielding layer. An increase in the temperature of the light shielding layer eventually causes an increase in the temperature of the entire electro-optical device 1, and there is a concern that the display characteristics may be adversely affected. On the other hand, this embodiment suppresses the temperature rise of the light shielding layer 122 by increasing the reflectance of the light shielding layer 122.

  FIG. 3 is a schematic diagram illustrating a configuration according to Example 1 of the element substrate 11 and the counter substrate 12. This figure shows a schematic diagram of a cross section perpendicular to the display surface. Here, only a region corresponding to one pixel electrode 112 is shown. On the liquid crystal 15 side of the counter substrate 12, an increasing reflection film 121, a light shielding layer 122, and a common electrode 123 are stacked in this order.

  The light shielding layer 122 is a layer mainly for shielding the TFT 111, and includes a metal layer 1221 as a layer that reflects light. However, since the reflectance of the metal layer 1221 is not 100%, part of the incident light is absorbed by the metal layer 1221. The metal layer 1221 is made of, for example, Al. The thickness of the metal layer 1221 is, for example, 50 to 150 nm, preferably 100 to 150 nm.

  The metal layer 1221 has a plurality of openings 124 (only a single opening 124 is shown in FIG. 3). The opening 124 is a region where the metal layer 1221 is not formed when viewed from a direction perpendicular to the counter substrate 12. When viewed from the direction perpendicular to the counter substrate 12, the metal layer 1221 is formed at a position overlapping the TFT 111, and the opening 124 is formed at a position overlapping the pixel electrode 112. The opening 124 is formed by patterning the metal layer 1221 using, for example, a photolithography technique. The opening 124 is a region that transmits light L from a light source (not shown) and contributes to display.

  FIG. 4 is a schematic diagram showing the positional relationship between the opening 124 and the pixel electrode 112. This figure is a diagram virtually showing the positional relationship between the metal layer 1221 and the pixel electrode 112 when viewed from the direction perpendicular to the counter substrate 12. 4A shows the position of the opening 124 in the metal layer 1221, and FIG. 4B shows the position of the pixel electrode 112. In FIG. 4B, the opening 124 is indicated by a broken line. The opening 124 has, for example, a rectangular shape when viewed from a direction perpendicular to the pixel electrode 112 and the counter substrate 12. The plurality of openings 124 are arranged in a matrix corresponding to the arrangement of the pixel electrodes 112. From the viewpoint of increasing the brightness of the formed image, it is desirable that the aperture ratio of the opening 124 be large.

  Refer to FIG. 3 again. For the metal layer 1221, the reflective reflection film 121 is formed on the incident side of the light L from the light source, that is, the counter substrate 12 side. The increased reflection film 121 is a film for increasing the reflectance of the light shielding layer 122, and is a so-called dielectric multilayer film. Since the dielectric multilayer film has an effect of increasing the reflectivity due to the difference in refractive index from the layer (in this example, the light shielding layer 122) where the reflectivity is desired to be increased, the single reflection film 121 alone does not emit incident light. Almost no reflection. The increased reflection film 121 includes a first dielectric layer 1211 and a second dielectric layer 1212. The first dielectric layer 1211 is a layer formed on the counter substrate 12. The second dielectric layer 1212 is a layer formed on the first dielectric layer 1211 and is formed of a material having a refractive index lower than that of the first dielectric layer 1211. That is, the first dielectric layer 1211 is formed on the counter substrate 12 side, and the second dielectric layer 1212 is formed on the light shielding layer 122 side.

  As an example, the first dielectric layer 1211 is formed of Si 3 N 4 having a thickness of 70 nm, and the second dielectric layer 1212 is formed of SiO 2 having a thickness of 70 nm. In another example, the first dielectric layer 1211 is formed of Al2O3 having a thickness of 120 nm, and the second dielectric layer 1212 is formed of SiO2 having a thickness of 60 nm. By using the increased reflection film 121, the reflectance of the light shielding layer 122 can be improved by, for example, 5 to 10%. The light absorption in the light shielding layer 122 may cause the temperature of the light shielding layer 122 to increase. However, according to this example, the reflectance of the light shielding layer 122 is improved, so that light absorption is suppressed, and as a result, the temperature rise of the light shielding layer 122 is suppressed.

  For the metal layer 1221, an antireflection film 1222 is formed on the light L emission side, that is, the liquid crystal 15 side. The antireflection film 1222 is a layer for preventing reflection of light from the liquid crystal 15 side, and is formed of TiN, for example, on the metal layer 1221. In this example, the antireflection film 1222 has substantially the same shape as the metal layer 1221 when viewed from the direction perpendicular to the counter substrate 12 (Z direction). In other words, the antireflection film 1222 is formed only on the liquid crystal 15 side (element substrate 11 side) with respect to the metal layer 1221. According to this example, it is possible to suppress a part of the light L transmitted through the opening 124 from being reflected by the liquid crystal 15 or the element substrate 11 and further being reflected by the metal layer 1221. The thickness of the antireflection film 1222 is, for example, 100 to 300 nm, and is 200 nm as an example.

  In the counter substrate 12, a common electrode 123 is formed on almost the entire surface on the liquid crystal 15 side. The common electrode 123 is formed on the light shielding layer 122 in the region where the light shielding layer 122 is formed, and on the enhanced reflection film 121 in the opening 124.

  FIG. 5 is a diagram illustrating the effect of the enhanced reflection film 121. FIG. 5A shows a configuration according to the present embodiment, that is, an example having the enhanced reflection film 121, and FIG. 5B shows a configuration according to the comparative example, that is, an example without the enhanced reflection film 121. In the comparative example, the light L incident from the light source enters the light shielding layer 122 (metal layer 1221) in a portion where the opening 124 is not provided. The light shielding layer 122 reflects most of the incident light L. If the reflectance of the light shielding layer 122 is rp, a part (1-rp) of the light L is absorbed by the light shielding layer 122. Also in this embodiment, the light L incident from the light source is incident on the light shielding layer 122 (metal layer 1221) in a portion where the opening 124 is not provided. Here, the reflectance of the light shielding layer 122 is re (> rp) due to the effect of the enhanced reflection film 121, and the ratio (1-rp) of the light L absorbed by the light shielding layer 122 is lower than that of the comparative example. Since the ratio of the light absorbed in the light shielding layer 122 is reduced as compared with the comparative example, the temperature rise in the light shielding layer 122 is suppressed in the present embodiment. As described above, the temperature rise of the light shielding layer 122 may adversely affect the display characteristics of the electro-optical device 1. According to the present embodiment, as a result of suppressing the temperature rise in the light shielding layer 122, the display characteristics are increased. The adverse effect on is reduced.

  FIG. 6 is a schematic diagram illustrating a configuration according to Example 2 of the counter substrate 12. Here, the difference from Example 1 will be mainly described. In FIG. 6 and subsequent figures, the element substrate 11 is omitted. In Example 1, the antireflection film 1222 was formed only on the element substrate 11 side with respect to the metal layer 1221 when viewed from the direction perpendicular to the counter substrate 12 (Z direction). On the other hand, in Example 2, the antireflection film 1222 is also formed on the side wall of the opening 124, that is, on the side surface of the metal layer 1221. Here, the side surface refers to a surface facing in the X direction or the Y direction. By forming the antireflection film 1222 on the side surface of the metal layer 1221, irregular reflection on the side surface of the metal layer 1221 can be suppressed.

  FIG. 7 is a schematic diagram illustrating a detailed configuration according to Example 3 of the counter substrate 12. Here, the difference from Example 1 will be mainly described. In Example 1, the reflective reflection film 121 was formed on the entire surface of the counter substrate 12, that is, in the region corresponding to the opening 124. On the other hand, in Example 3, the increased reflection film 121 is not formed in a region corresponding to the opening 124. The increased reflection film 121 itself is not a layer that contributes to display. Rather, a part of the light L may be reflected or absorbed by the increased reflection film 121. Therefore, considering the light L that is transmitted through the opening 124, The increased reflection film 121 is an extra layer. By removing the reflective reflection film 121 from the region corresponding to the opening 124, the reflection or absorption of the light L in the reflective reflection film 121 can be eliminated, so that the transmittance in the opening 124 can be improved. When the transmittance is improved, a brighter image can be formed even if the luminance of the light source is the same. Even in the case where the reflective reflection film 121 is formed on the entire surface of the counter substrate 12 as in Example 1, the refractive indexes of the first dielectric layer 1211, the second dielectric layer 1212, and the common electrode 123 satisfy a specific condition. In this case, the enhanced reflection film 121 functions as an antireflection film for the common electrode 123. In such a case, it is meaningful to form the enhanced reflection film 121 on the entire surface of the counter substrate 12 as in Example 1.

  FIG. 8 is a schematic diagram illustrating a detailed configuration according to Example 4 of the counter substrate 12. Here, the difference from Example 1 will be mainly described. In Example 4, a so-called microlens array is formed on the counter substrate 12. The microlens array has a plurality of microlenses arranged in an array. FIG. 8 shows only a single microlens. The microlens is an optical member for increasing light transmitted through the liquid crystal panel. When the microlens is not provided as in the examples of FIGS. 3, 6, and 7, part of the light L from the light source is reflected by the light shielding layer 122. The light reflected by the light shielding layer 122 is light that no longer contributes to image formation, and is useless light from the viewpoint of image formation. In order to effectively utilize the light output from the light source and display a bright image, it is desirable to eliminate this waste, but the reflectance of the light shielding layer 122 cannot be reduced. Therefore, in this example, the amount of light incident on the light shielding layer 122 is reduced by controlling the optical path of the light L using a microlens, and a bright image is displayed by effectively using the light L from the light source.

  Specifically, a light transmitting layer 125, a lens layer 126, and a light transmitting layer 127 are formed on the counter substrate 12 on the counter substrate 12 side of the increased reflection film 121. The translucent layer 125 and the lens layer 126 are layers for forming a microlens, and both are translucent and formed of materials having different refractive indexes (specifically, for example, the lens layer 126 The refractive index is larger than that of the translucent layer 125). A lens-shaped recess is formed in the light transmitting layer 125, and the lens layer 126 is filled in the recess to form a lens. The light transmissive layer 127 is a layer for flattening the surface on which the microlenses are formed and adjusting the optical path. These structures are designed in position and size so as to guide the light L from the light source to the opening 124.

  FIG. 9 is a schematic diagram illustrating a detailed configuration according to Example 5 of the counter substrate 12. In Example 5, a microlens array is formed on the counter substrate 12 of Example 2. By using the microlens, light can be converged on the opening 124.

  FIG. 10 is a schematic diagram illustrating a detailed configuration according to Example 6 of the counter substrate 12. In Example 6, a microlens array is formed on the counter substrate 12 of Example 2. By using the microlens, light can be converged on the opening 124.

  FIG. 11 is a schematic diagram illustrating a detailed configuration according to Example 7 of the counter substrate 12. In Example 7, in the counter substrate 12 of Example 4, another stage microlens is stacked in the stacking direction of the element substrate 11 and the counter substrate 12 (the traveling direction of the incident light L from the light source). Specifically, a lens layer 128 and a light transmitting layer 129 are formed on the counter substrate 12 on the liquid crystal 15 side of the common electrode 123. The lens layer 128 and the light-transmitting layer 129 are layers for forming a microlens, both of which are light-transmitting and formed of materials having different refractive indexes (specifically, for example, the lens layer 128 of the lens layer 128). The refractive index is higher than that of the light-transmitting layer 129). The microlens formed on the liquid crystal 15 side of the common electrode 123 is for converting the converged light into parallel light. By using two microlenses laminated in the light traveling direction, parallel light can be output.

  FIG. 12 is a schematic diagram illustrating a detailed configuration according to Example 8 of the counter substrate 12. In Example 8, another microlens is laminated on the counter substrate 12 of Example 5. By using two microlenses laminated in the light traveling direction, parallel light can be output.

  FIG. 13 is a schematic diagram illustrating a detailed configuration according to Example 9 of the counter substrate 12. In Example 9, another stage microlens is laminated on the counter substrate 12 of Example 6. By using two microlenses laminated in the light traveling direction, parallel light can be output.

  In the example of FIGS. 9-12, the light can be converged on the opening 124 by using the microlens. As a result, light incident on the light shielding layer 122 can be suppressed as compared with an example without a microlens. Although the reflectance of the light shielding layer 122 is increased by the increased reflection film 121, the amount of light incident on the light shielding layer 122 is further reduced by the microlens, so that the temperature rise of the light shielding layer is further suppressed.

  FIG. 14 is a diagram illustrating a projector 2100 according to an embodiment. The projector 2100 is an example of an electronic device that uses the electro-optical device 1. In the projector 2100, the liquid crystal panel 100 is used as a light valve. As shown in this figure, a lamp unit 2102 having a white light source such as a halogen lamp is provided inside the projector 2100. The projection light emitted from the lamp unit 2102 is converted into three primary colors of R (red), G (green), and B (blue) by three mirrors 2106 and two dichroic mirrors 2108 arranged inside. To be separated. The separated projection light is guided to the light valves 100R, 100G and 100B corresponding to the respective primary colors. B light has a longer optical path than other R and G colors. Therefore, in order to prevent the loss, light of B color is guided through a relay lens system 2121 having an incident lens 2122, a relay lens 2123, and an output lens 2124. It is burned.

  In the projector 2100, three sets of liquid crystal display devices including the liquid crystal panel 100 are provided corresponding to each of the R color, the G color, and the B color. The configuration of the light valves 100R, 100G, and 100B is the same as that of the liquid crystal panel 100 described above. Video signals are respectively supplied from the external upper circuits to specify the gradation levels of the primary color components of R, G, and B, and the light valves 100R, 100G, and 100 are driven. The lights modulated by the light valves 100R, 100G, and 100B are incident on the dichroic prism 2112 from three directions. In the dichroic prism 2112, the R and B light beams are refracted at 90 degrees, and the G light beam travels straight. Therefore, after the primary color images are combined, a color image is projected onto the screen 2120 by the projection lens group 2114.

  Since light corresponding to each of the R, G, and B colors is incident on the light valves 100R, 100G, and 100B by the dichroic mirror 2108, it is not necessary to provide a color filter. Further, the transmission images of the light valves 100R and 100B are projected after being reflected by the dichroic prism 2112, while the transmission image of the light valve 100G is projected as it is. Therefore, the horizontal scanning direction by the light valves 100R and 100B is opposite to the horizontal scanning direction by the light valve 100G, and an image with the left and right reversed is displayed.

  As an electronic apparatus in which the electro-optical device 1 is used, in addition to the projector illustrated in FIG. 14, a television, a viewfinder type / direct monitor type video tape recorder, a car navigation device, a pager, an electronic notebook, a calculator, Examples thereof include a word processor, a workstation, a videophone, a POS terminal, a digital still camera, a mobile phone, and a device equipped with a touch panel.

  The present invention is not limited to the above-described embodiment, and various modifications can be made. Hereinafter, some modifications will be described. Two or more of the following modifications may be used in combination.

  The liquid crystal 15 is not limited to the VA liquid crystal. A liquid crystal other than the VA liquid crystal such as a TN (Twisted Nematic) liquid crystal may be used. Further, the liquid crystal 15 may be either a normally black mode or a normally white mode liquid crystal.

  The structure, material, and dimensions of each layer described in the embodiment are merely examples, and the present invention is not limited thereto. For example, the light shielding layer 122 may not have the antireflection film 1222. Further, the enhanced reflection film 121 may be a laminate of three layers of dielectric layers.

DESCRIPTION OF SYMBOLS 1 ... Electro-optical device, 11 ... Element substrate, 12 ... Opposite substrate, 15 ... Liquid crystal, 17 ... Terminal, 19 ... Sealing material, 111 ... TFT, 112 ... Pixel electrode, 121 ... Increase reflection film, 122 ... Light shielding layer, 123 ... Common electrode, 124 ... Opening part, 125 ... Transparent layer, 126 ... Lens layer, 127 ... Transparent layer, 128 ... Lens layer, 129 ... Transparent layer, 1211 ... First dielectric layer, 1212 ... Second dielectric Body layer, 1221 ... metal layer, 1222 ... antireflection film

Claims (7)

A counter substrate;
An element substrate having a switching element for controlling voltage application to the pixel electrode;
A liquid crystal sandwiched between the counter substrate and the element substrate;
A light-shielding layer provided between the counter substrate and the liquid crystal and having an opening to shield the switching element;
An electro-optical device comprising: a light-reflecting layer and an increased reflection film formed on the counter substrate side. The electro-optical device according to claim 1, wherein the increased reflection film is not formed in the opening. The electro-optical device according to claim 1, further comprising an antireflection film formed on a surface of the light shielding layer on the element substrate side and a side surface on the opening portion side. The electro-optical device according to claim 1, wherein the increased reflection film is also formed in a region corresponding to the opening. The light shielding layer includes a metal layer formed on the surface on the side of the increased reflection film,
The increased reflection film includes a first dielectric layer formed on the counter substrate side and a second dielectric layer formed on the metal layer side and having a refractive index lower than that of the first dielectric layer. The electro-optical device according to claim 1, wherein the electro-optical device is characterized in that: The electro-optical device according to claim 1, wherein the light shielding layer is formed on the counter substrate.   An electronic apparatus comprising the electro-optical device according to claim 1.

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