JP2018037541A - Method for manufacturing perforated substrate and perforated substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a perforated substrate capable of filling a hollow part with a resin in a step after forming a through electrode in a through hole including the hollow part, and preventing damage such as a substrate crack when hardening the resin and removing an unnecessary portion of the resin by polishing.SOLUTION: A method for manufacturing a perforated substrate 12 comprises: a preparing step of a substrate including a first surface 13 and a second surface 14 and provided with a through hole 20 penetrating from the first surface to the second surface; a step of blocking the through hole of the substrate on the second surface side by a film 41; a first sealing step of covering the through hole of the substrate by a first film 31 including a first resin layer 32 from the first surface side; and a pushing-in step of pushing the first resin layer into the inside of the through hole by applying higher pressure than pressure inside the through hole covered by the first film to the first film.SELECTED DRAWING: Figure 7

Description

  Embodiments of the present disclosure relate to a method for manufacturing a perforated substrate and a perforated substrate.

  A substrate including a first surface and a second surface and provided with a through hole penetrating from the first surface to the second surface, and provided in the through hole so as to reach the second surface side from the first surface side of the substrate There is known a through electrode substrate including the formed through electrode. As examples of the through electrode of the through electrode substrate, so-called filled vias and conformal vias are known. In the case of filled vias, the through electrode includes a conductive material such as copper filled in the through hole. In the case of a conformal via, the through electrode extends along the side wall of the through hole so that a hollow portion exists in the through hole.

  By the way, when the hollow part exists in the through hole, the waste of the conductive material or the like may enter the hollow part of the through hole as a residue in the process after the through electrode is formed in the through hole. As a means for solving such a problem, filling a hollow portion with a resin can be mentioned. For example, Patent Documents 1 and 2 disclose a means of first filling a hollow portion with a resin from the first surface side of the substrate, curing the resin, and then removing unnecessary portions of the resin by polishing. Yes.

JP 2015-211077 A JP 2001-15909 A

  When the step of removing unnecessary portions of the resin by polishing is performed, stress is applied to the substrate, and as a result, damage such as cracking may occur in the substrate.

  An object of the embodiment of the present disclosure is to provide a method for manufacturing a perforated substrate and a perforated substrate that can solve such a problem.

  One embodiment of the present disclosure is a method for manufacturing a perforated substrate, which includes a first surface and a second surface, and a substrate provided with a through hole penetrating from the first surface to the second surface is prepared. A first step of covering the through hole of the substrate with the first film including the first resin layer from the first surface side; a preparing step; a step of closing the through hole of the substrate on the second surface side; A first pushing step of applying a pressure higher than the pressure inside the through hole covered with the first film to push the first resin layer into the through hole; And a manufacturing method.

  In the method for manufacturing a perforated substrate according to an embodiment of the present disclosure, the first sealing step may include a step of heating the first resin layer of the first film.

  In the method for manufacturing a perforated substrate according to an embodiment of the present disclosure, the first pressing step includes a step of pressing the first film toward the first surface of the substrate through a heated pressing member. You may go out.

  In the method for manufacturing a perforated substrate according to an embodiment of the present disclosure, the first sealing step may include a step of depressurizing the inside of the through hole of the substrate to 500 Pa or less.

  1st wiring is provided in the said 1st surface of the said board | substrate prepared in the said preparation process of the manufacturing method of the perforated board | substrate by one Embodiment of this indication, The said manufacturing method is a said 1st pushing process. Thereafter, a step of forming an opening for partially exposing the first wiring in the first resin layer located on the first surface of the substrate may be further provided.

  In the method for manufacturing a perforated substrate according to an embodiment of the present disclosure, the first resin layer includes a curable resin that is cured by electromagnetic waves or charged particle beams, and the first surface of the substrate that is prepared in the preparation step. In the manufacturing method, the manufacturing method includes an irradiation step of irradiating the first resin layer inside the through hole with an electromagnetic wave or a charged particle beam after the first pressing step, The method may further comprise a step of removing the first resin layer located on the first surface and a first protective layer forming step of forming a first protective layer on the first wiring.

  In the method for manufacturing a perforated substrate according to an embodiment of the present disclosure, the first resin layer includes a curable resin that is cured by electromagnetic waves or charged particle beams, and the first surface of the substrate that is prepared in the preparation step. Are provided with a first wiring, and the manufacturing method includes a developing step of supplying a developing solution to the first resin layer, and a first protective layer formation for forming a first protective layer on the first wiring. And a process.

  The method for manufacturing a perforated substrate according to an embodiment of the present disclosure may further include an irradiation step of irradiating the first resin layer inside the through hole with an electromagnetic wave or a charged particle beam after the developing step. .

  The first protective layer forming step of the method for manufacturing a perforated substrate according to an embodiment of the present disclosure includes a step of applying the first protective layer to the first surface of the substrate, and a step of applying the first protective layer to the first protective layer. Forming an opening that partially exposes the first wiring.

  In the method for manufacturing a perforated substrate according to an embodiment of the present disclosure, the thickness of the substrate may be not less than 100 μm and not more than 600 μm, and the dimension of the through hole may be not less than 30 μm and not more than 200 μm.

  In the method for manufacturing a perforated substrate according to an embodiment of the present disclosure, the first resin layer may include a polyimide resin, an acrylic resin, a phenol resin, a polyphenylene ether resin, or an epoxy resin.

  A through electrode is provided on a side wall of the through hole of the substrate prepared in the preparation step of the method for manufacturing a perforated substrate according to an embodiment of the present disclosure, and the first surface of the substrate is provided with the through electrode. Is provided with a first wiring which is connected to the through electrode and located on the first surface, and the first wiring extends along a normal direction of the first surface of the substrate. A gap from the inner edge of the first wiring facing the through hole to the outer edge of the first wiring may be provided.

  A method for manufacturing a perforated substrate according to an embodiment of the present disclosure includes a second sealing step of covering the through hole of the substrate from the second surface side with a second film including a second resin layer, and the second sealing step. A second pressing step of pressing the second resin layer into the through hole by applying a pressure higher than the pressure inside the through hole covered with the second film to the film; Also good.

  In the method for manufacturing a perforated substrate according to an embodiment of the present disclosure, the second sealing step may include a step of heating the second resin layer of the second film.

  In the method for manufacturing a perforated substrate according to an embodiment of the present disclosure, the second pressing step includes a step of pressing the second film toward the second surface of the substrate via a heated pressing member. You may go out.

  In the method for manufacturing a perforated substrate according to an embodiment of the present disclosure, the second sealing step may include a step of depressurizing the inside of the through hole of the substrate to 500 Pa or less.

  A first wiring is provided on the first surface of the substrate prepared in the preparation step of the method for manufacturing a perforated substrate according to an embodiment of the present disclosure, and a first wiring is provided on the second surface. Two wirings are provided, the area of the first wiring is larger than the area of the second wiring, and the thermal expansion coefficient of the first resin layer is smaller than the thermal expansion coefficient of the second resin layer. It may be.

  One embodiment of the present disclosure includes a substrate including a first surface and a second surface, the substrate having a through hole penetrating from the first surface to the second surface, and a resin filled in the through hole of the substrate And the resin portion includes a first resin layer on the first surface side and a second resin layer on the second surface side that contacts the first resin layer at the interface. is there.

  A perforated substrate according to an embodiment of the present disclosure is provided in the through hole, and is disposed on the first surface of the substrate and connected to the through electrode, the through electrode extending from the first surface to the second surface A first wiring that faces the through hole when the first wiring is viewed along a normal direction of the first surface of the substrate. A gap from the inner edge of the wiring to the outer edge of the first wiring may be provided.

  A perforated substrate according to an embodiment of the present disclosure is provided in the through hole, and is disposed on the first surface of the substrate and connected to the through electrode, the through electrode extending from the first surface to the second surface And a second wiring located on the second surface of the substrate and connected to the through electrode, wherein the area of the first wiring is larger than the area of the second wiring The thermal expansion coefficient of the first resin layer may be larger than the thermal expansion coefficient of the second resin layer.

  According to the embodiment of the present disclosure, it is possible to prevent the substrate from being damaged such as a crack.

It is a top view which shows the perforated board | substrate which concerns on one Embodiment. It is sectional drawing which looked at the perforated board | substrate of FIG. 1 from the II-II direction. It is sectional drawing which shows 1 process of the manufacturing method of the perforated board | substrate which concerns on one Embodiment. It is sectional drawing which shows 1 process of the manufacturing method of the perforated board | substrate which concerns on one Embodiment. It is sectional drawing which shows 1 process of the manufacturing method of the perforated board | substrate which concerns on one Embodiment. It is sectional drawing which shows 1 process of the manufacturing method of the perforated board | substrate which concerns on one Embodiment. It is sectional drawing which shows 1 process of the manufacturing method of the perforated board | substrate which concerns on one Embodiment. It is sectional drawing which shows 1 process of the manufacturing method of the perforated board | substrate which concerns on one Embodiment. It is sectional drawing which shows 1 process of the manufacturing method of the perforated board | substrate which concerns on one Embodiment. It is sectional drawing which shows 1 process of the manufacturing method of the perforated board | substrate which concerns on one Embodiment. It is sectional drawing which shows 1 process of the manufacturing method of the perforated board | substrate which concerns on one Embodiment. It is sectional drawing which shows 1 process of the manufacturing method of the perforated board | substrate which concerns on a 1st modification. It is sectional drawing which shows 1 process of the manufacturing method of the perforated board | substrate which concerns on a 1st modification. It is sectional drawing which shows 1 process of the manufacturing method of the perforated board | substrate which concerns on a 1st modification. It is sectional drawing which shows 1 process of the manufacturing method of the perforated board | substrate which concerns on a 2nd modification. It is sectional drawing which shows 1 process of the manufacturing method of the perforated board | substrate which concerns on a 2nd modification. It is sectional drawing which shows 1 process of the manufacturing method of the perforated board | substrate which concerns on a 2nd modification. It is sectional drawing which shows 1 process of the manufacturing method of the perforated board | substrate which concerns on a 3rd modification. It is sectional drawing which shows the perforated board | substrate which concerns on a 4th modification. It is sectional drawing which shows the perforated board | substrate which concerns on a 5th modification. It is a top view which shows the perforated board | substrate which concerns on a 5th modification. It is sectional drawing which shows 1 process of the manufacturing method of the perforated board | substrate which concerns on a 5th modification. It is a top view which shows the perforated board | substrate which concerns on a 6th modification. It is a figure which shows the example of the product in which a penetration electrode substrate is mounted.

  Hereinafter, a configuration of a perforated substrate and a manufacturing method thereof according to an embodiment of the present disclosure will be described in detail with reference to the drawings. The following embodiments are examples of the embodiments of the present invention, and the present disclosure is not construed as being limited to these embodiments. Further, in this specification, terms such as “substrate”, “base material”, “sheet”, and “film” are not distinguished from each other only based on the difference in names. For example, “substrate” and “base material” are concepts including members that can be called sheets and films. Furthermore, as used in this specification, the shape and geometric conditions and the degree thereof are specified. For example, terms such as “parallel” and “orthogonal”, length and angle values, and the like are bound to a strict meaning. Therefore, it should be interpreted including the extent to which similar functions can be expected. In the drawings referred to in this embodiment, the same portions or portions having similar functions are denoted by the same reference symbols or similar reference symbols, and repeated description thereof may be omitted. In addition, the dimensional ratio in the drawing may be different from the actual ratio for convenience of explanation, or a part of the configuration may be omitted from the drawing.

  Hereinafter, an embodiment of the present disclosure will be described with reference to FIGS. 1 to 11. Here, an example in which the perforated substrate is a through electrode substrate including a through electrode provided on the side wall of the through hole will be described.

Through Electrode Substrate With reference to FIGS. 1 and 2, the through electrode substrate 10 according to the present embodiment will be described. FIG. 1 is a plan view showing the through electrode substrate 10. FIG. 2 is a cross-sectional view of the through electrode substrate 10 of FIG. 1 cut along the alternate long and short dash line as viewed from the II-II direction.

  As shown in FIGS. 1 and 2, the through electrode substrate 10 includes a substrate 12 provided with a plurality of through holes 20, a through electrode 22, a first wiring 25, a second wiring 27, and a resin portion 30. Hereinafter, each component of the through electrode substrate 10 will be described. As shown in FIG. 2, the through hole 20 and the first wiring 25 are covered with a first resin layer 32. Therefore, in the plan view of FIG. 1, the through hole 20 and the first wiring 25 are represented by dotted lines.

(substrate)
The substrate 12 includes a first surface 13 and a second surface 14 located on the opposite side of the first surface 13. The substrate 12 is made of a material having a certain insulating property. For example, the substrate 12 is a glass substrate, quartz substrate, sapphire substrate, resin substrate, silicon substrate, silicon carbide substrate, alumina (Al ₂ O ₃ ) substrate, aluminum nitride (AlN) substrate, zirconium oxide (ZrO ₂ ) substrate, etc. Alternatively, these substrates are stacked. The substrate 12 may include a substrate made of a conductive material such as an aluminum substrate or a stainless steel substrate.

  The thickness of the substrate 12 is not particularly limited. For example, it is preferable to use the substrate 12 having a thickness of 100 μm or more and 600 μm or less. More preferably, the substrate 12 has a thickness of 200 μm or more and 500 μm or less. By setting the thickness of the substrate 12 to 100 μm or more, it is possible to suppress an increase in the deflection of the substrate 12. For this reason, it is possible to suppress the handling of the substrate 12 in the manufacturing process and the warping of the substrate 12 due to internal stress such as a thin film formed on the substrate 12. Further, by setting the thickness of the substrate 12 to 600 μm or less, the time required for the step of forming the through hole 20 in the substrate 12 is lengthened, and an increase in the manufacturing cost of the through electrode substrate 10 can be suppressed.

  As shown in FIG. 2, the through hole 20 is provided in the substrate 12 so as to extend from the first surface 13 to the second surface 14 of the substrate 12. The dimension S1 of the through hole 20 in the surface direction D1 of the first surface 13 is, for example, in the range of 30 μm or more and 200 μm or less. The surface direction D1 is a direction parallel to the first surface 13.

(Penetration electrode)
The through electrode 22 is a conductive member provided inside the through hole 20. As shown in FIG. 2, the through electrode 22 extends along the side wall 21 of the through hole 20. That is, the through electrode 22 is a so-called conformal via.

  As long as the through electrode 22 has conductivity, the formation method of the through electrode 22 is not particularly limited. For example, the through electrode 22 may be formed by a physical film formation method such as an evaporation method or a sputtering method, or may be formed by a chemical film formation method or a plating method. Further, the through electrode 22 may be composed of a single layer having conductivity, or may include a plurality of layers having conductivity. Hereinafter, an example in which the through electrode 22 includes a seed layer and a plating layer provided on the seed layer will be described.

  The seed layer is a conductive layer that serves as a base for depositing metal ions in the plating solution and growing the plating layer during the plating step of forming the plating layer. As a material for the seed layer, for example, the same metal material as the plating layer, such as copper, can be used. Moreover, you may use the electroconductive material which has the high adhesiveness with respect to the material of the board | substrate 12 compared with a plating layer as a material of a seed layer. For example, as a material for the seed layer, titanium, molybdenum, tungsten, tantalum, nickel, chromium, aluminum, a compound thereof, an alloy thereof, or the like, or a laminate of these can be used.

  When the plating layer deposited on the seed layer contains copper, a material that suppresses diffusion of copper into the substrate 12 is preferably used as the material of the seed layer. For example, titanium nitride, molybdenum nitride, tantalum nitride, or the like, or a stack of these can be used. The thickness of the seed layer is, for example, in the range of not less than 20 nm and not more than 500 nm.

  The plating layer is a conductive layer provided on the seed layer in order to increase the conductivity of the through electrode 22. As a material for the plating layer, a conductive material having high adhesion to the seed layer and high conductivity is preferably used. For example, as a material of the plating layer, a metal such as copper, gold, silver, platinum, rhodium, tin, aluminum, nickel, chromium, an alloy using these, or a laminate of these can be used. The thickness of the plating layer is, for example, in the range of 1 μm or more and 20 μm or less.

  The thickness of the plating layer is determined according to the conductivity required for the through electrode 22. For example, when the through electrode 22 is a member for conducting a power supply line or a ground line, a plating layer having a sufficient thickness is used. Further, when the through electrode 22 is a member for conducting a weak electric signal, a plating layer having a small thickness may be used. Alternatively, although not shown, only the seed layer may be provided in the through hole 20 without providing a plating layer.

(First wiring)
The first wiring 25 is a conductive member provided on the first surface 13 of the substrate 12. As shown in FIG. 2, the first wiring 25 is connected to the end of the through electrode 22 on the first surface 13 side. As shown in FIG. 1, when the first wiring 25 is viewed along the normal direction of the first surface 13 of the substrate 12, the first wiring 25 surrounds the through hole 20. In other words, the first wiring 25 has an inner edge 25x surrounding the through hole 20 and an outer edge 25y surrounding the inner edge 25x.

  Note that the specific configuration of the first wiring 25 is not particularly limited as long as it is located on the first surface 13 and has conductivity. For example, although not shown, the through electrode substrate 10 may further include a first wiring 25 provided on the first surface 13 so as not to face the through hole 20. In FIG. 1, the plurality of first wirings 25 are provided discretely, but the present invention is not limited to this, and adjacent first wirings 25 may be connected to each other.

  As long as the 1st wiring 25 has electroconductivity, the formation method of the 1st wiring 25 is not specifically limited. For example, the conductive layer constituting the first wiring 25 may be continuous with the conductive layer constituting the through electrode 22. In this case, the first wiring 25 is integrally formed simultaneously with the through electrode 22.

(Second wiring)
The second wiring 27 is a conductive member provided on the second surface 14 of the substrate 12. As shown in FIG. 2, the second wiring 27 is connected to the end of the through electrode 22 on the second surface 14 side. Although not shown, when the second wiring 27 is viewed along the normal direction of the second surface 14 of the substrate 12 as in the case of the first wiring 25, the second wiring 27 surrounds the through hole 20. Yes.

  Note that the specific configuration of the second wiring 27 is not particularly limited as long as it is located on the second surface 14 and has conductivity. For example, although not shown, the through electrode substrate 10 may further include a second wiring 27 provided on the second surface 14 so as not to face the through hole 20.

  As long as the 2nd wiring 27 has electroconductivity, the formation method of the 2nd wiring 27 is not specifically limited. For example, the conductive layer constituting the second wiring 27 may be continuous with the conductive layer constituting the through electrode 22. In this case, the second wiring 27 is integrally formed simultaneously with the through electrode 22 as in the case of the first wiring 25.

(Resin part)
The resin portion 30 is a resin filled in the through hole 20. As shown in FIG. 2, the resin portion 30 includes a first resin layer 32 on the first surface 13 side and a second resin layer 37 on the second surface 14 side. The first resin layer 32 and the second resin layer 37 are in contact with each other at the interface 35 inside the through hole 20. By providing the resin portion 30 in the through hole 20, it is possible to suppress the waste of conductive material and the like from entering the inside of the through hole 20 as a residue.

  The through-hole 20 may be filled without a gap by the resin portion 30 including the first resin layer 32 and the second resin layer 37 or may not be filled without a gap. For example, there may be a gap where the first resin layer 32 or the second resin layer 37 does not exist inside the through hole 20. Even in such a case, by closing the end portion of the through hole 20 with the first resin layer 32 and the second resin layer 37, waste of conductive material or the like enters the inside of the through hole 20 as a residue. This can be suppressed.

  The first resin layer 32 and the second resin layer 37 of the resin part 30 include a curable resin that is cured by electromagnetic waves or charged particle beams. For example, the first resin layer 32 and the second resin layer 37 include an insulating organic material such as polyimide resin, epoxy resin, acrylic resin, phenol resin, polyphenylene ether resin, and a photopolymerization initiator. The material constituting the first resin layer 32 and the material constituting the second resin layer 37 may be the same or different.

  The interface 35 between the first resin layer 32 and the second resin layer 37 can be confirmed by using, for example, an optical microscope or an electron microscope. Further, when the material constituting the first resin layer 32 and the material constituting the second resin layer 37 are different, the composition of the resin portion 30 from the first surface 13 side or the second surface 14 side in the thickness direction of the substrate 12. It can also be confirmed by analyzing.

  As shown in FIGS. 1 and 2, the first resin layer 32 may be located not only inside the through hole 20 but also on the first surface 13 of the substrate 12. In this case, the first resin layer 32 functions as a protective layer that covers the first wiring 25 and protects the first wiring 25. The thickness T1 of the first resin layer 32 located on the first surface 13 is set so that the first resin layer 32 can be sufficiently filled in the through hole 20. The thickness T1 of the first resin layer 32 positioned on the first surface 13 is, for example, 15 μm or more and 50 μm or less.

  As shown in FIGS. 1 and 2, an opening 32 a for partially exposing the first wiring 25 is provided in a part of the first resin layer 32 located on the first surface 13. A member such as a wiring layer, which will be described later, can be connected to the first wiring 25 through the opening 32a.

  As shown in FIG. 2, the second resin layer 37 may also be located not only inside the through hole 20 but also on the second surface 14 of the substrate 12. In this case, the second resin layer 37 functions as a protective layer that covers the second wiring 27 and protects the second wiring 27. Similar to the first resin layer 32, the thickness of the second resin layer 37 located on the second surface 14 is set so that the second resin layer 37 can be sufficiently filled in the through hole 20. The thickness of the second resin layer 37 located on the second surface 14 is, for example, 15 μm or more and 50 μm or less.

  As shown in FIG. 2, an opening 37 a for partially exposing the second wiring 27 is also provided in a part of the second resin layer 37 located on the second surface 14. A member such as a wiring layer described later can be connected to the second wiring 27 through the opening 37a.

Method for producing a through electrode substrate Hereinafter, an example of a manufacturing method of the through electrode substrate 10 will be described with reference to FIGS. 3 to 11.

(Through-hole formation process)
First, the substrate 12 is prepared. Next, as shown in FIG. 3, the substrate 12 is processed to form a plurality of through holes 20 in the substrate 12. For example, although not shown, first, a region of the surfaces 13 and 14 of the substrate 12 where the through hole 20 is not formed is covered with a resist layer. Subsequently, regions of the surfaces 13 and 14 of the substrate 12 that are not covered with the resist layer are removed, and a plurality of through holes 20 are formed. As a method for removing a region not covered with the resist layer, a dry etching method such as a reactive ion etching method or a deep digging reactive ion etching method, a wet etching method, or the like can be used.

As an etchant for the wet etching method, hydrogen fluoride (HF), sulfuric acid (H ₂ SO ₄ ), nitric acid (HNO ₃ ), hydrochloric acid (HCl), or a mixture thereof may be used. it can.

  As the dry etching method, dry etching RIE (Reactive Ion Etching) using plasma, DRIE (Deep Reactive Ion Etching RIE) using Bosch process, laser blasting, laser processing such as laser ablation, or the like can be used.

  As a laser for laser processing, an excimer laser, an Nd: YAG laser, a femtosecond laser, or the like can be used. When an Nd: YAG laser is employed, a fundamental wave having a wavelength of 1064 nm, a second harmonic having a wavelength of 532 nm, a third harmonic having a wavelength of 355 nm, or the like can be used.

  Further, laser irradiation and wet etching can be appropriately combined. Specifically, first, a deteriorated layer is formed in a region of the substrate 12 where the through hole 20 is to be formed by laser irradiation. Subsequently, the altered layer is etched by immersing the substrate 12 in hydrogen fluoride or the like. Thereby, the through hole 20 can be formed in the substrate 12.

(Penetration electrode formation process)
Subsequently, a through electrode 22 is formed in the through hole 20 of the substrate 12. For example, first, a seed layer is formed on the first surface 13, the second surface 14 of the substrate 12, and the side wall 21 of the through hole 20. As a method for forming the seed layer, for example, a physical film formation method such as an evaporation method or a sputtering method, a chemical film formation method, or the like can be used. Subsequently, a resist layer is partially formed on the seed layer. Specifically, the resist layer is formed so that the region located in the region of the seed layer where the through electrode 22 is not formed is covered with the resist layer. Subsequently, a plating layer is formed on the region of the seed layer not covered with the resist layer by electrolytic plating. Subsequently, the resist layer is removed. Thereafter, the seed layer covered with the resist layer is removed. In this way, the through electrode 22 shown in FIG. 4 can be formed. At this time, as shown in FIG. 4, the first wiring 25 and the second wiring 27 may be formed simultaneously with the through electrode 22.

(Sealing process on the second surface side)
Subsequently, a step of closing the through hole 20 of the substrate 12 on the second surface 14 side is performed. For example, as shown in FIG. 5, the through hole 20 of the substrate 12 is covered with a film 41 from the second surface 14 side. Thereby, it is possible to prevent the periphery of the substrate 12 and the inside of the through hole 20 from communicating with each other on the second surface 14 side. The film 41 is a resin film containing a resin material such as polyethylene naphthalate. The thickness of the film 41 is, for example, 30 μm or more and 100 μm or less.

(First sealing step)
Then, as shown in FIG. 6, the 1st sealing process which covers the through-hole 20 of the board | substrate 12 with the 1st film 31 from the 1st surface 13 side is implemented. As shown in FIG. 6, the first film 31 includes a first base material 33 and a first resin layer 32 laminated on the first base material 33. The through hole 20 of the substrate 12 is covered with the first film 31 so that the first resin layer 32 is located on the substrate 12 side. For example, the first film 31 is pressed against the first surface 13 of the substrate 12 using a roller. Thereby, the inside of the through hole 20 can be sealed from the periphery of the substrate 12.

  Preferably, the first sealing step includes a step of heating the first resin layer 32 of the first film 31. Thus, the first resin layer 32 in a heated and softened state can be firmly attached to the first surface 13 of the substrate 12. The method for heating the first resin layer 32 is not particularly limited. For example, the first film 31 may be pressed against the first surface 13 of the substrate 12 using a roller having a heating mechanism such as a heater. Further, the first resin layer 32 may be heated by radiant heat transfer using an infrared heater or the like.

  Preferably, the first sealing step includes a step of reducing the pressure inside the through hole 20 of the substrate 12 to 500 Pa or less. For example, in the first sealing step, the through-hole 20 of the substrate 12 is covered with the first film 31 from the first surface 13 side inside the chamber whose pressure is reduced to 500 Pa or less. Thereby, the pressure inside the through hole 20 sealed by the first film 31 can be reduced to 500 Pa or less. This makes it easier for the first resin layer 32 of the first film 31 to be pushed into the through hole 20 in a first pushing step described later.

(First indentation process)
Subsequently, as shown in FIG. 7, the first resin layer 32 of the first film 31 is applied to the first film 31 by applying a pressure higher than the pressure inside the through hole 20 covered with the first film 31. A first pushing process of pushing into the through hole 20 is performed. For example, as shown in FIG. 7, the diaphragm 51 is disposed so as to face the first film 31. Subsequently, the pressure around the substrate 12 is set higher than the pressure inside the through hole 20. For example, a gas having a pressure higher than the pressure inside the through hole 20 is introduced into the chamber. As a result, the first film 31 is pressed to the first surface 13 side of the substrate 12 through the diaphragm 51, and as a result, the first resin layer 32 of the first film 31 is pressed into the through hole 20. Alternatively, the first film 31 may be pressed to the first surface 13 side of the substrate 12 through the diaphragm 51 by opening the chamber to the atmosphere and setting the pressure around the substrate 12 to atmospheric pressure. The difference between the pressure inside the through hole 20 and the pressure around the substrate 12 is preferably 100 kPa or more.

  Preferably, the heated diaphragm 51 is brought into contact with the first film 31. Accordingly, the first resin layer 32 of the first film 31 can be heated and softened, and thus the first resin layer 32 of the first film 31 is easily pushed into the through hole 20.

  The first sealing step and the first pushing step described above may be sequentially performed as separate steps. Alternatively, the first sealing process and the first pushing process may be performed simultaneously as a series of processes. For example, using the same mechanism or technique, pressing the first film 31 against the first surface 13 of the substrate 12 and pressing the first resin layer 32 of the first film 31 into the through hole 20 You may implement continuously as a series of processes. In this case, the first film 31 may be heated at an arbitrary timing. For example, the heating may be started at the timing when the first resin layer 32 of the first film 31 is pushed into the through hole 20.

  Although not shown, a pressing member such as the diaphragm 51 may not be interposed between the gas having a pressure higher than the pressure inside the through hole 20 and the first film 31. That is, the first film 31 may be directly pressed to the first surface 13 side of the substrate 12 by a gas having a pressure higher than the pressure inside the through hole 20.

(Second sealing step)
Subsequently, the film 41 is removed from the second surface 14 of the substrate 12. Next, as shown in FIG. 8, the 2nd sealing process which covers the through-hole 20 of the board | substrate 12 with the 2nd film 36 from the 2nd surface 14 side is implemented. Similar to the first film 31, the second film 36 includes a second base material 38 and a second resin layer 37 laminated on the second base material 38. The through hole 20 of the substrate 12 is covered with the second film 36 so that the second resin layer 37 is positioned on the substrate 12 side. Thereby, the inside of the through hole 20 can be sealed again from the periphery of the substrate 12.

  As in the case of the first sealing step, the second sealing step preferably also includes a step of heating the second resin layer 37 of the second film 36. Accordingly, the second resin layer 37 that is heated and softened can be firmly attached to the second surface 14 of the substrate 12. As in the case of the first sealing step, the second sealing step preferably also includes a step of reducing the pressure inside the through hole 20 of the substrate 12 to 500 Pa or less.

(Second indentation process)
Subsequently, as shown in FIG. 9, the second resin layer 37 of the second film 36 is applied to the second film 36 by applying a pressure higher than the pressure inside the through hole 20 covered with the second film 36. A second pushing process of pushing into the through hole 20 is performed. For example, as in the case of the first pressing step, the diaphragm 51 is disposed so as to face the first film 31, and then the pressure around the substrate 12 is made higher than the pressure inside the through hole 20. The difference between the pressure inside the through hole 20 and the pressure around the substrate 12 is preferably 100 kPa or more.

  Similar to the first sealing step and the first pressing step described above, the second sealing step and the second pressing step may be sequentially performed as separate steps, or may be simultaneously performed as a series of steps. Good.

(Irradiation process)
Subsequently, as shown in FIG. 10, an irradiation step of irradiating the first resin layer 32 and the second resin layer 37 with electromagnetic waves or charged particle beams, for example, light L is performed. Thereby, the first resin layer 32 and the second resin layer 37 can be cured. At this time, the light L is not irradiated to the portion of the first resin layer 32 where the opening 32a is formed and the portion of the second resin layer 37 where the opening 37a is formed. Note that the irradiation of the light L to the first resin layer 32 and the irradiation of the light L to the second resin layer 37 may be performed simultaneously or at different timings. The irradiation of the light L to the first resin layer 32 may be performed after the first base material 33 is removed from the first resin layer 32, and before the first base material 33 is removed from the first resin layer 32. May be implemented. Similarly, the irradiation of the light L to the second resin layer 37 may be performed after the second base material 38 is removed from the second resin layer 37, and the second base material 38 is removed from the second resin layer 37. It may be carried out before.

(Development process)
Subsequently, a developing process is performed in which a developer is supplied to the first resin layer 32 and the second resin layer 37 to remove portions of the first resin layer 32 and the second resin layer 37 that have not been irradiated with the light L. To do. Accordingly, as shown in FIG. 11, the opening 32 a can be formed in the first resin layer 32, and the opening 37 a can be formed in the second resin layer 37. In this way, the through electrode substrate 10 in which the through hole 20 is filled with the resin portion 30 including the first resin layer 32 on the first surface 13 side and the second resin layer 37 on the second surface 14 side can be obtained. . As shown in FIG. 11, a recess 32 b resulting from pushing the first resin layer 32 into the through hole 20 is formed on the surface of the portion of the first resin layer 32 that overlaps the through hole 20. Sometimes. Similarly, a depression 37b may be formed on the surface of the portion of the second resin layer 37 that overlaps the through hole 20.

  According to the present embodiment, the resin portion 30 is inserted into the through hole 20 by pushing the resin layer into the through hole 20 by utilizing the difference between the pressure inside the through hole 20 and the pressure around the substrate 12. Fill. For this reason, it can suppress that damage, such as a crack, arises in a board | substrate compared with the case where the process of removing the unnecessary part of resin by grinding | polishing is implemented.

  Note that various modifications can be made to the above-described embodiment. Hereinafter, modified examples will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, the same reference numerals as those used for the corresponding parts in the above embodiment are used for the parts that can be configured in the same manner as in the above embodiment. A duplicate description is omitted. In addition, when it is clear that the operational effects obtained in the above-described embodiment can be obtained in the modified example, the description thereof may be omitted.

(First modification)
In the above-described embodiment, the first resin layer 32 is located not only in the through hole 20 but also on the first surface 13 of the substrate 12, and the first resin layer 32 covers the first wiring 25 and is first. The example which functions also as a protective layer which protects 1 wiring 25 was shown. In this modification, an example in which a first protective layer 34 that protects the first wiring 25 is provided on the first surface 13 of the substrate 12 separately from the first resin layer 32 will be described.

Method for producing a through electrode substrate Hereinafter, an example of a manufacturing method of the through electrode substrate 10 will be described with reference to FIGS. 12 to 14. The description of the same steps as those in the above-described embodiment shown in FIGS. 3 to 11 will be omitted as appropriate.

  First, the substrate 12 provided with the through electrode 22, the first wiring 25, and the second wiring 27 is prepared in the same manner as in the process of the above-described embodiment shown in FIGS. 3 and 4. Subsequently, the first resin layer 32 is filled into the through hole 20 from the first surface 13 side using the first film 31 in the same manner as in the steps of the above-described embodiment shown in FIGS. In addition, the second resin layer 37 is filled into the through hole 20 from the second surface 14 side using the second film 36.

(Irradiation process)
Subsequently, as shown in FIG. 12, an irradiation step of irradiating the first resin layer 32 and the second resin layer 37 positioned inside the through hole 20 with electromagnetic waves or charged particle beams, for example, light L is performed. Thereby, the first resin layer 32 and the second resin layer 37 located inside the through hole 20 can be cured.

(Development process)
Subsequently, a developing process is performed in which a developer is supplied to the first resin layer 32 and the second resin layer 37 to remove portions of the first resin layer 32 and the second resin layer 37 that have not been irradiated with the light L. To do. In the present modification, as shown in FIG. 13, a portion of the first resin layer 32 that does not overlap with the through hole 20 when the first resin layer 32 is viewed along the normal direction of the first surface 13. Removed. For example, a portion of the first resin layer 32 that has been located on the first wiring 25 is removed. As shown in FIG. 13, a portion of the second resin layer 37 that does not overlap with the through hole 20 when the second resin layer 37 is viewed along the normal direction of the second surface 14 is removed. For example, the portion of the second resin layer 37 that has been located on the second wiring 27 is removed.

(Protective layer forming step)
Subsequently, as shown in FIG. 14, a first protective layer forming step is performed in which a first protective layer 34 provided with an opening 34 a for partially exposing the first wiring 25 is formed on the first surface 13 of the substrate 12. To do. For example, first, a protective layer composition liquid containing an insulating organic material and a photopolymerization initiator is applied to the first surface 13, the protective layer composition liquid is solidified, and the first protective layer 34 is formed on the first surface 13. Form. Examples of the organic material include polyimide resin, epoxy resin, acrylic resin, phenol resin, polyphenylene ether resin, and the like. Next, the first protective layer 34 is cured by irradiating the first protective layer 34 with an electromagnetic wave or a charged particle beam, for example, light. At this time, the portion of the first protective layer 34 where the opening 34a is formed is prevented from being irradiated with light. Thereafter, by developing the first protective layer 34, as shown in FIG. 14, the first protective layer 34 provided with an opening 34 a for partially exposing the first wiring 25 can be provided on the first surface 13. it can.

  Further, as shown in FIG. 14, a second protective layer forming step is performed in which a second protective layer 39 provided with an opening 39 a that partially exposes the second wiring 27 is formed on the second surface 14 of the substrate 12. . In the second protective layer forming step, for example, as in the case of the first protective layer forming step described above, the step of applying the protective layer composition liquid to the second surface 14, and solidifying the protective layer composition liquid to form the second protective layer And a step of forming an opening 39a in the second protective layer 39.

  In this way, as shown in FIG. 14, the first wiring 25 is covered by the first protective layer 34 different from the first resin layer 32 filled in the through hole 20, and the through hole 20 is filled. The through electrode substrate 10 in which the second wiring 27 is covered with the second protective layer 39 different from the second resin layer 37 can be obtained.

  According to this modification, the first protective layer 34 that protects the first wiring 25 on the first surface 13 is formed using a member different from the first resin layer 32 filled in the through hole 20. Therefore, the thickness T2 of the first protective layer 34 can be set without being restricted based on the filling property to the through hole 20. For example, the thickness T2 of the first protective layer 34 can be made smaller than the thickness T1 of the first resin layer 32 located on the first surface 13 in the above-described embodiment. As a result, the entire thickness of the through electrode substrate 10 can be reduced. The thickness T2 of the first protective layer 34 is, for example, 3 μm or more and 20 μm or less.

  Similarly, according to this modification, for example, the thickness of the second protective layer 39 can be made smaller than the thickness of the second resin layer 37 located on the second surface 14 in the above-described embodiment. As a result, the entire thickness of the through electrode substrate 10 can be reduced. The thickness of the second protective layer 39 is, for example, 3 μm or more and 20 μm or less.

  In addition, according to the present modification, even when a depression resulting from pushing the first resin layer 32 into the through hole 20 is formed on the surface of the first resin layer 32, the first protective layer The protective layer composition liquid for 34 can be applied onto the first resin layer 32 to fill the recess. For this reason, the flatness of the surface of the through electrode substrate 10 can be improved. The same applies to the depression of the second resin layer 37.

(Second modification)
In the first modified example described above, after the first resin layer 32 and the second resin layer 37 located inside the through hole 20 are irradiated with electromagnetic waves or charged particle beams, the first resin layer 32 and the second resin layer are irradiated. An example of developing 37 was shown. In this modification, an example in which the uncured first resin layer 32 and the second resin layer 37 are developed will be described. The description of the same steps as those in the above-described embodiment shown in FIGS. 3 to 11 will be omitted as appropriate.

  First, the substrate 12 provided with the through electrode 22, the first wiring 25, and the second wiring 27 is prepared in the same manner as in the process of the above-described embodiment shown in FIGS. 3 and 4. Subsequently, the first resin layer 32 is filled into the through hole 20 from the first surface 13 side using the first film 31 in the same manner as in the steps of the above-described embodiment shown in FIGS. In addition, the second resin layer 37 is filled into the through hole 20 from the second surface 14 side using the second film 36. Next, as shown in FIG. 15, the first base material 33 is removed from the first resin layer 32, and the second base material 38 is removed from the second resin layer 37.

(Development process)
Subsequently, as illustrated in FIG. 15, a developing process for supplying the developer Dv to the first resin layer 32 is performed. A specific method for supplying the developer Dv to the first resin layer 32 is arbitrary. For example, the developer Dv may be discharged toward the first resin layer 32, or the substrate 12 provided with the first resin layer 32 may be immersed in a tank in which the developer is stored. .
In the present modification, not only the first resin layer 32 positioned on the first surface 13 but also the first resin layer 32 is viewed along the normal direction of the first surface 13 in the first resin layer 32. In some cases, the portion overlapping the through hole 20 is also uncured. For this reason, as shown in FIG. 16, the first resin layer 32 located on the first surface 13 is removed, and the first resin layer 32 overlapping the through hole 20 is also partially removed. Preferably, the development process ends when the depression D formed in the first resin layer 32 reaches a predetermined value. The recess D is a distance from the surface of the first wiring 25 to the surface of the first resin layer 32. The recess D is preferably 0.1 μm or more and 20 μm or less, for example, 10 μm.

  Similarly to the first resin layer 32, as shown in FIG. 15, the developer Dv is supplied to the second resin layer 37 to develop the second resin layer 37. Accordingly, as shown in FIG. 16, the second resin layer 37 located on the second surface 14 is removed, and the second resin layer 37 overlapping the through hole 20 is also partially removed.

(Irradiation process)
Subsequently, as illustrated in FIG. 16, an irradiation step of irradiating the first resin layer 32 and the second resin layer 37 positioned inside the through hole 20 with electromagnetic waves or charged particle beams, for example, light L is performed. Thereby, the first resin layer 32 and the second resin layer 37 located inside the through hole 20 can be cured.

(Protective layer forming step)
Subsequently, as shown in FIG. 17, a first protective layer forming step is performed in which a first protective layer 34 provided with an opening 34 a for partially exposing the first wiring 25 is formed on the first surface 13 of the substrate 12. To do. For example, as in the case of the first modification described above, a step of applying the protective layer composition liquid to the first surface 13, a step of solidifying the protective layer composition liquid to form the first protective layer 34, and a first step 1 includes a step of forming an opening 34 a in the protective layer 34.

  In addition, as shown in FIG. 17, a second protective layer forming step is performed in which a second protective layer 39 provided with an opening 39 a that partially exposes the second wiring 27 is formed on the second surface 14 of the substrate 12. . In the second protective layer forming step, for example, as in the case of the first protective layer forming step described above, the step of applying the protective layer composition liquid to the second surface 14, and solidifying the protective layer composition liquid to form the second protective layer And a step of forming an opening 39a in the second protective layer 39.

  In this way, as shown in FIG. 17, the first wiring 25 is covered by the first protective layer 34 different from the first resin layer 32 filled in the through hole 20, and the through hole 20 is filled. The through electrode substrate 10 in which the second wiring 27 is covered with the second protective layer 39 different from the second resin layer 37 can be obtained.

  According to this modification, the first protective layer 34 that protects the first wiring 25 on the first surface 13 is formed using a member different from the first resin layer 32 filled in the through hole 20. Therefore, the thickness T2 of the first protective layer 34 can be set without being restricted based on the filling property to the through hole 20. For example, the thickness T2 of the first protective layer 34 can be made smaller than the thickness T1 of the first resin layer 32 located on the first surface 13 in the above-described embodiment. As a result, the entire thickness of the through electrode substrate 10 can be reduced. The thickness T2 of the first protective layer 34 is, for example, 3 μm or more and 20 μm or less.

  Further, according to the present modification, the first resin layer 32 that overlaps the through hole 20 is partially removed in the development process, so that the position of the surface on the first surface 13 side of the first resin layer 32 is the above-described position. It is closer to the second surface 14 than in the case of the first modification. For this reason, when the through electrode substrate 10 is viewed along the normal direction of the first surface 13, bulges and irregularities caused by the first resin layer 32 are formed on the surface of the through electrode substrate 10 in a region overlapping the through hole 20. Can be suppressed.

  Similarly, according to this modification, the thickness of the second protective layer 39 can be made smaller than the thickness of the second resin layer 37 located on the second surface 14 in the above-described embodiment. As a result, the entire thickness of the through electrode substrate 10 can be reduced. The thickness of the second protective layer 39 is, for example, 3 μm or more and 20 μm or less. In addition, according to the present modification, when the through electrode substrate 10 is viewed along the normal direction of the second surface 14, there is a bulge or unevenness caused by the second resin layer 37 in a region overlapping the through hole 20. Occurrence of the surface of the through electrode substrate 10 can be suppressed.

(Third Modification)
In the above-described embodiment, the first resin layer 32 is pushed into the through hole 20 from the first surface 13 side of the substrate 12, and the second resin layer 37 is pushed into the through hole 20 from the second surface 14 side of the substrate 12. The example which forms the resin part 30 by this was shown. In this modification, an example in which the resin portion 30 is formed by pressing the first resin layer 32 into the through hole 20 from the first surface 13 side of the substrate 12 will be described.

  First, the substrate 12 provided with the through electrode 22, the first wiring 25, and the second wiring 27 is prepared in the same manner as in the process of the above-described embodiment shown in FIGS. 3 and 4. 5 and 6, the film 41 is attached to the second surface 14 of the substrate 12 and the first film 31 is attached to the first surface 13 of the substrate 12 in the same manner as in the process of the above-described embodiment shown in FIGS. Attach and seal through hole 20.

(First indentation process)
Subsequently, a pressure higher than the pressure inside the through hole 20 covered by the first film 31 is applied to the first film 31 to push the first resin layer 32 of the first film 31 into the through hole 20. A 1st pushing process is implemented. Thereby, as shown in FIG. 18, the first resin layer 32 is spread over the entire area inside the through hole 20. In this way, it is possible to obtain the through electrode substrate 10 in which the through hole 20 is filled with the resin portion 30 including the first resin layer 32 located in the entire area of the through hole 20.

  According to this modification, the resin portion 30 can be formed by pushing the first resin layer 32 from the first surface 13 side. For this reason, the man-hour for forming the resin part 30 can be reduced compared with the case of the above-mentioned embodiment. In the present modification, the thickness T1 of the first resin layer 32 is such that the first resin layer 32 is spread over the entire area inside the through hole 20 by pushing the first resin layer 32 from the first surface 13 side. The thickness T of the substrate 12 and the dimension S of the through hole 20 are set. For example, the thickness T1 of the first resin layer 32 is 20 μm or more and 50 μm or less, the thickness T of the substrate 12 is 100 μm or more and 400 μm or less, and the dimension S of the through hole 20 is 30 μm or more and 100 μm or less.

(Fourth modification)
In the present modification, an example will be described in which the material constituting the first resin layer 32 and the material constituting the second resin layer 37 are selected so as to prevent the through electrode substrate 10 from warping.

  First, the first wiring 25 and the second wiring 27 of the through electrode substrate 10 in this modification will be described. As shown in FIG. 19, the area of the first wiring 25 located on the first surface 13 side of the substrate 12 is different from the area of the second wiring 27 located on the second surface 14 side of the substrate 12. For example, the area of the first wiring 25 is larger than the area of the second wiring 27.

  By the way, the thermal expansion coefficient of the conductive material constituting the first wiring 25 and the second wiring 27 is generally larger than the thermal expansion coefficient of the glass or silicon constituting the substrate 12. For example, the thermal expansion coefficient of copper, which is an example of a conductive material, is about 17 ppm. On the other hand, the thermal expansion coefficient of glass is in the range of 3 ppm to 9 ppm, and the thermal expansion coefficient of silicon is about 2 ppm. Therefore, when the area of the first wiring 25 and the area of the second wiring 27 are different, it is conceivable that warpage due to the difference in both areas appears in the through electrode substrate 10.

  In consideration of such a problem, in the present modification, the first resin layer is formed so as to eliminate the warp generated in the through electrode substrate 10 due to the difference in the area of the first wiring 25 and the area of the second wiring 27. It is proposed to select a material constituting the material 32 and a material constituting the second resin layer 37. For example, when the area of the first wiring 25 is larger than the area of the second wiring 27, it is proposed to make the thermal expansion coefficient of the first resin layer 32 smaller than the thermal expansion coefficient of the second resin layer 37. Thereby, it is possible to suppress the warpage from appearing in the through electrode substrate 10.

  An example of a method for measuring the thermal expansion coefficient of the first resin layer 32 and the thermal expansion coefficient of the second resin layer 37 includes thermomechanical analysis (TMA). Thermomechanical analysis is a method of calculating a coefficient of thermal expansion by applying compression, tension, bending, or the like to a sample while changing the temperature of the sample, and measuring deformation occurring in the sample as a function of temperature or time.

(Fifth modification)
In the above-described embodiment, the example in which the inner edge 25x of the first wiring 25 surrounds the through hole 20 when the first wiring 25 is viewed along the normal direction of the first surface 13 of the substrate 12 has been described. In this modification, an example in which the inner edge 25x of the first wiring 25 does not completely surround the through hole 20 when the first wiring 25 is viewed will be described. As a result, as will be described later, the inside of the through hole 20 can be easily decompressed.

  FIG. 20 is a cross-sectional view showing a through electrode substrate 10 according to this modification. FIG. 21 is a plan view showing the through electrode substrate 10 shown in FIG. 20 as viewed from the first surface 13 side. As shown in FIGS. 20 and 21, the first wiring 25 is provided with a gap 25 a from the inner edge 25 x facing the through hole 20 to the outer edge 25 y. Hereinafter, advantages of providing the gap 25a in the first wiring 25 will be described.

  FIG. 22 is a diagram illustrating a first sealing process of the manufacturing process of the through electrode substrate 10 according to the present modification. In the present modification, the first film 31 is attached to the first wiring 25 provided with the gap 25a. In this case, as shown in FIG. 23, there is a gap between the first resin layer 32 of the first film 31 and the substrate 12 in the portion where the gap 25 a is formed in the first wiring 25. Therefore, even after the first film 31 is attached to the first surface 13 of the substrate 12, the gas F inside the through hole 20 can be exhausted to the outside through the gap. For this reason, pressure reduction inside the through hole 20 can be easily performed.

  A method of providing the gap 25a in the first wiring 25 is not particularly limited. For example, when the first wiring 25 includes the above-described seed layer and plating layer, after forming the seed layer, a resist layer is formed in a portion of the seed layer corresponding to the gap 25a. Subsequently, a plating layer is formed on the region of the seed layer not covered with the resist layer by electrolytic plating. Subsequently, the resist layer is removed. Thereafter, the seed layer covered with the resist layer is removed. In this way, the first wiring 25 provided with the gap 25a can be formed.

  Although not shown, the second wiring 27 located on the second surface 14 of the substrate 12 may be provided with a gap from the inner edge to the outer edge of the second wiring 27, similarly to the first wiring 25.

(Sixth Modification)
As shown in FIG. 23, a wiring layer 60 may be provided on the first surface 13 side of the through electrode substrate 10. The wiring layer 60 includes a conductive layer 61 connected to the first wiring 25 of the through electrode substrate 10 and an insulating layer 62. As shown in FIG. 23, a plurality of wiring layers 60 may be stacked on the first surface 13 side.

  Similarly, the wiring layer 60 may be provided also on the second surface 14 side of the through electrode substrate 10. The wiring layer 60 includes a conductive layer 61 connected to the second wiring 27 of the through electrode substrate 10 and an insulating layer 62. As shown in FIG. 23, a plurality of wiring layers 60 may be stacked on the second surface 14 side.

(Seventh Modification)
In the above-described embodiment, an example in which the diaphragm 51 is used as a pressing member that pushes the first resin layer 32 of the first film 31 into the through hole 20 has been described. However, the specific configuration of the pressing member is not particularly limited as long as the first film 31 can be pressed toward the through hole 20 and the first resin layer 32 can be pressed into the through hole 20. For example, a roller may be used as the pressing member. As in the case of the diaphragm 51, preferably, a pressing member such as a roller is brought into contact with the first film 31 in a heated state. Accordingly, the first resin layer 32 of the first film 31 can be heated and softened, and thus the first resin layer 32 of the first film 31 is easily pushed into the through hole 20.

(Example of products with through-electrode substrate)
FIG. 24 is a diagram illustrating an example of a product on which the through electrode substrate 10 can be mounted. The through electrode substrate 10 according to the embodiment of the present invention can be used in various products. For example, it is mounted on a notebook personal computer 110, a tablet terminal 120, a mobile phone 130, a smartphone 140, a digital video camera 150, a digital camera 160, a digital clock 170, a server 180, and the like.

  In addition, although some modified examples with respect to the above-described embodiment have been described, naturally, a plurality of modified examples can be applied in combination as appropriate.

DESCRIPTION OF SYMBOLS 10 Through-electrode board | substrate 12 Substrate 13 1st surface 14 2nd surface 20 Through-hole 21 Side wall 22 Through-electrode 25 1st wiring 25a Gap 25x Inner edge 25y Outer edge 27 Second wiring 30 Resin part 31 First film 32 First resin layer 32a Opening 33 first base material 34 first protective layer 34a opening 36 second film 37 second resin layer 37a opening 38 second base material 39 second protective layer 39a opening 41 film 51 diaphragm 60 wiring layer 61 conductive layer 62 insulating layer

Claims (20)

A method for manufacturing a perforated substrate, comprising:
A preparation step of preparing a substrate including a first surface and a second surface and provided with a through hole penetrating from the first surface to the second surface;
Closing the through hole of the substrate on the second surface side;
A first sealing step of covering the through hole of the substrate from the first surface side with a first film including a first resin layer;
Applying a pressure higher than the pressure inside the through hole covered with the first film to the first film, and pressing the first resin layer into the through hole; ,Production method.   The manufacturing method according to claim 1, wherein the first sealing step includes a step of heating the first resin layer of the first film.   The manufacturing method according to claim 1, wherein the first pressing step includes a step of pressing the first film toward the first surface of the substrate via a heated pressing member.   The manufacturing method according to claim 1, wherein the first sealing step includes a step of reducing the pressure inside the through hole of the substrate to 500 Pa or less. A first wiring is provided on the first surface of the substrate prepared in the preparation step,
The manufacturing method further includes a step of forming an opening for partially exposing the first wiring in the first resin layer located on the first surface of the substrate after the first pressing step. Item 5. The production method according to any one of Items 1 to 4. The first resin layer includes a curable resin that is cured by electromagnetic waves or charged particle beams,
A first wiring is provided on the first surface of the substrate prepared in the preparation step,
The manufacturing method includes:
After the first pushing step, an irradiation step of irradiating the first resin layer inside the through hole with an electromagnetic wave or a charged particle beam,
Removing the first resin layer located on the first surface;
The manufacturing method according to claim 1, further comprising: a first protective layer forming step of forming a first protective layer on the first wiring. The first resin layer includes a curable resin that is cured by electromagnetic waves or charged particle beams,
A first wiring is provided on the first surface of the substrate prepared in the preparation step,
The manufacturing method includes:
A developing step of supplying a developer to the first resin layer;
The manufacturing method according to claim 1, further comprising: a first protective layer forming step of forming a first protective layer on the first wiring.   The said manufacturing method is a manufacturing method of Claim 7 further equipped with the irradiation process of irradiating an electromagnetic wave or a charged particle beam to the said 1st resin layer inside the said through-hole after the said image development process.   The first protective layer forming step includes a step of applying the first protective layer to the first surface of the substrate, and a step of forming an opening in the first protective layer to partially expose the first wiring. The manufacturing method as described in any one of Claims 6 thru | or 8 containing these. The thickness of the substrate is 100 μm or more and 600 μm or less,
10. The manufacturing method according to claim 1, wherein a dimension of the through hole is 30 μm or more and 200 μm or less.   The said 1st resin layer is a manufacturing method as described in any one of Claims 1 thru | or 10 containing a polyimide resin, an acrylic resin, a phenol resin, a polyphenylene ether resin, or an epoxy resin. A through electrode is provided on a side wall of the through hole of the substrate prepared in the preparation step, and the first surface of the substrate is connected to the through electrode, and is formed on the first surface. A first wiring located is provided,
When the first wiring is viewed along the normal direction of the first surface of the substrate, the first wiring extends from an inner edge of the first wiring facing the through hole to an outer edge of the first wiring. The manufacturing method as described in any one of Claims 1 thru | or 4 in which the gap | interval which reaches is provided. The manufacturing method includes:
A second sealing step of covering the through hole of the substrate from the second surface side with a second film including a second resin layer;
Applying a pressure higher than the pressure inside the through hole covered by the second film to the second film to further push the second resin layer into the through hole; and The manufacturing method as described in any one of Claims 1 thru | or 12 provided.   The manufacturing method according to claim 13, wherein the second sealing step includes a step of heating the second resin layer of the second film.   The manufacturing method according to claim 13 or 14, wherein the second pressing step includes a step of pressing the second film toward the second surface of the substrate via a heated pressing member.   The manufacturing method according to any one of claims 13 to 15, wherein the second sealing step includes a step of reducing the pressure inside the through hole of the substrate to 500 Pa or less. A first wiring is provided on the first surface of the substrate prepared in the preparation step, and a second wiring is provided on the second surface,
The area of the first wiring is larger than the area of the second wiring,
The manufacturing method according to any one of claims 13 to 16, wherein a thermal expansion coefficient of the first resin layer is smaller than a thermal expansion coefficient of the second resin layer. A substrate including a first surface and a second surface, and provided with a through hole penetrating from the first surface to the second surface;
A resin portion filled in the through hole of the substrate,
The resin portion includes a first resin layer on the first surface side and a second resin layer on the second surface side in contact with the first resin layer at the interface. A through electrode provided in the through hole and extending from the first surface to the second surface;
A first wiring located on the first surface of the substrate and connected to the through electrode;
When the first wiring is viewed along the normal direction of the first surface of the substrate, the first wiring extends from an inner edge of the first wiring facing the through hole to an outer edge of the first wiring. The perforated substrate according to claim 18, wherein a leading gap is provided. A through electrode provided in the through hole and extending from the first surface to the second surface;
A first wiring located on the first surface of the substrate and connected to the through electrode;
A second wiring located on the second surface of the substrate and connected to the through electrode;
The area of the first wiring is larger than the area of the second wiring,
19. The perforated substrate according to claim 18, wherein a thermal expansion coefficient of the first resin layer is smaller than a thermal expansion coefficient of the second resin layer.