JP2018036583A - Display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a display device that has improved brightness, provide a display device that has high reliability, improve the display quality of a display device, and display an image with high display quality regardless of the use environment.SOLUTION: A display device has mutually overlapping light emitting elements, a first region, and a second region. The first region has a first portion that receives incoming light, a second portion that reflects part of light and supplies it to a third portion, and a third portion that emits the light. The second region has a fourth portion that receives the light emitted from the third portion, a fifth portion that reflects part of light and supplies it to a sixth portion, and the sixth portion that emits the light. The first portion has a smaller area than that of the third portion, and the fourth portion has a smaller area than that of the sixth portion.SELECTED DRAWING: Figure 1

Description

  One embodiment of the present invention relates to a display device.

  Note that one embodiment of the present invention is not limited to the above technical field. Technical fields of one embodiment of the present invention disclosed in this specification and the like include semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting devices, input devices, input / output devices, and driving methods thereof , Or a method for producing them, can be mentioned as an example.

  Note that in this specification and the like, a semiconductor device refers to any device that can function by utilizing semiconductor characteristics. A transistor, a semiconductor circuit, an arithmetic device, a memory device, or the like is one embodiment of a semiconductor device. In addition, an imaging device, an electro-optical device, a power generation device (including a thin film solar cell, an organic thin film solar cell, and the like) and an electronic device may include a semiconductor device.

  A display device to which an organic EL (Electro Luminescence) element or a liquid crystal element is applied is known. In addition, a light-emitting device including a light-emitting element such as a light-emitting diode (LED), electronic paper that performs display by an electrophoresis method, and the like can be given as examples of the display device.

  The basic structure of the organic EL element is such that a layer containing a light-emitting organic compound is sandwiched between a pair of electrodes. Light emission can be obtained from the light-emitting organic compound by applying a voltage to this element. A display device to which such an organic EL element is applied can realize a thin, lightweight, high-contrast display device with low power consumption.

  Active matrix liquid crystal display devices are roughly classified into two types, a transmission type and a reflection type.

  The transmissive liquid crystal display device uses a backlight such as a cold cathode fluorescent lamp or an LED (Light Emitting Diode), and the light from the backlight transmits the liquid crystal by utilizing the optical modulation action of the liquid crystal. A state that is output to the outside and a state that is not output are selected, bright and dark display is performed, and further, they are combined to perform image display.

  In addition, the reflective liquid crystal display device utilizes the optical modulation action of the liquid crystal, and the external light, that is, the incident light is reflected by the pixel electrode and output to the outside of the device, and the incident light is not output to the outside of the device. An image is displayed by selecting a state, displaying bright and dark, and combining them. The reflective liquid crystal display device has an advantage of low power consumption because it does not use a backlight as compared with the transmissive liquid crystal display device.

  For example, an active matrix liquid crystal display device using a transistor having a metal oxide channel formation region as a switching element connected to each pixel electrode is known (Patent Document 1 and Patent Document 2).

JP 2007-123861 A JP 2007-96055 A

  In an electronic device to which a display device is applied, it is required to display an image with an optimum luminance according to a use environment. In particular, in a device that uses a battery as a power source, such as a mobile phone, a smartphone, a tablet terminal, a smart watch, and a notebook personal computer, the usage environment often changes unlike a stationary device. In particular, it is required to display with high luminance in a place where the outside light is bright.

  An object of one embodiment of the present invention is to provide a display device capable of increasing luminance. Another object is to provide a highly reliable display device. Another object is to improve display quality of a display device. Another object is to display an image with high display quality regardless of the use environment. Another object is to reduce power consumption of the display device.

  Note that the description of these problems does not disturb the existence of other problems. In one embodiment of the present invention, it is not necessary to solve all of these problems. Further, it is possible to extract issues other than those described above from the description of the specification and the like.

  One embodiment of the present invention is a display device including a light-emitting element, a first region, and a second region. The light emitting element, the first region, and the second region have portions overlapping each other. The light emitting element has a function of emitting light. The first region has a first portion, a second portion, and a third portion. The first part is a part on which light is incident, the second part is a part that reflects part of the light and supplies it to the third part, and the third part emits light. Part. The second region has a fourth portion, a fifth portion, and a sixth portion. The fourth part is a part where the light emitted from the third part is incident, and the fifth part is a part that reflects a part of the light and supplies it to the sixth part. The part is a part from which light is emitted. The first portion is smaller than the area of the third portion, and the fourth portion is smaller than the area of the sixth portion.

  In the above, the light-emitting element preferably includes a first electrode, a layer containing a light-emitting substance, and a second electrode. At this time, the first electrode has a function of transmitting visible light and is positioned between the second electrode and the first region, and the second electrode has a function of reflecting visible light. It is preferable.

  In the above, it is preferable to include the first transistor and the first insulating layer covering the first transistor. At this time, the first transistor is electrically connected to the light-emitting element, the first insulating layer has a first opening, and the first region is located inside the first opening. preferable.

  In the above, it is preferable to have a liquid crystal element. At this time, the liquid crystal element includes a third electrode, a fourth electrode, and a liquid crystal between the third electrode and the fourth electrode. The third electrode preferably has a function of reflecting visible light and has a second opening between the fourth electrode and the second region. Moreover, it is preferable that the light emitted from the sixth portion is emitted through the second opening.

  In the above, it is preferable to include the second transistor and a second insulating layer covering the second transistor. At this time, the second transistor is electrically connected to the liquid crystal element, the second insulating layer has a third opening, and the second region is located inside the third opening. preferable.

  In the above, it is preferable to have an adhesive layer between the first region and the second region.

  In the above, the second portion reflects the visible light and has a first light reflection layer having a cylindrical shape, and a first resin layer inside the first light reflection layer, It is preferable to have. Furthermore, it is preferable that the inner surface of the first light reflecting layer has a convex curved surface whose diameter continuously increases from the first part side to the third part side.

  In the above, the fifth portion includes a second light reflecting layer that reflects visible light and has a cylindrical shape, and a second resin layer inside the second light reflecting layer. It is preferable to have. At this time, it is preferable that the inner surface of the second light reflecting layer has a convex curved surface whose diameter continuously increases from the fourth part side to the sixth part side.

  In the above, it is preferable to have a colored layer positioned between the first region and the second region. Alternatively, it is preferable to have a colored layer positioned between the first portion and the third portion, or between the fourth portion and the sixth portion.

  According to one embodiment of the present invention, a display device capable of increasing luminance can be provided. Alternatively, a highly reliable display device can be provided. Alternatively, the display quality of the display device can be improved. Alternatively, the video can be displayed with high display quality regardless of the use environment. Alternatively, power consumption of the display device can be reduced.

  Note that one embodiment of the present invention does not necessarily have all of these effects. Note that it is possible to extract effects other than these from the description, drawings, claims, and the like.

3 shows a configuration example of a display device according to an embodiment. 3 shows a configuration example of a display device according to an embodiment. 3 shows a configuration example of a display device according to an embodiment. 3 shows a configuration example of a display device according to an embodiment. 3 shows a configuration example of a display device according to an embodiment. 3 shows a configuration example of a display device according to an embodiment. 8A to 8D illustrate a method for manufacturing a display device according to Embodiment. 8A to 8D illustrate a method for manufacturing a display device according to Embodiment. 8A to 8D illustrate a method for manufacturing a display device according to Embodiment. 8A to 8D illustrate a method for manufacturing a display device according to Embodiment. 8A to 8D illustrate a method for manufacturing a display device according to Embodiment. 8A to 8D illustrate a method for manufacturing a display device according to Embodiment. 8A to 8D illustrate a method for manufacturing a display device according to Embodiment. 3 shows a configuration example of a display device according to an embodiment. 3 shows a configuration example of a display device according to an embodiment. 4 illustrates a structure example of a transistor according to an embodiment. 3 shows a configuration example of a display device according to an embodiment. The circuit diagram of the display device based on an embodiment. The circuit diagram of the display device based on an embodiment. The structural example of the display module which concerns on embodiment. An electronic device according to an embodiment.

  Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below.

  Note that in structures of the invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description thereof is not repeated. In addition, in the case where the same function is indicated, the hatch pattern is the same, and there is a case where no reference numeral is given.

  Note that in each drawing described in this specification, the size, the layer thickness, or the region of each component is exaggerated for simplicity in some cases. Therefore, it is not necessarily limited to the scale.

  In the present specification and the like, ordinal numbers such as “first” and “second” are used for avoiding confusion between components, and are not limited numerically.

  A transistor is a kind of semiconductor element, and can realize amplification of current and voltage, switching operation for controlling conduction or non-conduction, and the like. The transistor in this specification includes an IGFET (Insulated Gate Field Effect Transistor) and a thin film transistor (TFT: Thin Film Transistor).

  In the following, expressions indicating the direction such as “up” and “down” are basically used in combination with the direction of the drawing. However, for the purpose of facilitating the description and the like, the direction indicated by “upper” or “lower” in the specification may not match the drawing. As an example, when explaining the stacking order (or forming order) of a laminated body or the like, the surface (formation surface, support surface, adhesive surface, flat surface, etc.) on the side where the laminated body is provided in the drawing Even if it is positioned above the laminated body, the direction may be expressed as “down”, the opposite direction may be expressed as “up”, and the like.

(Embodiment 1)
In this embodiment, a display device of one embodiment of the present invention will be described with reference to drawings.

[Configuration example 1]
[Configuration Example 1-1]
FIG. 1A schematically illustrates a structure included in a display device of one embodiment of the present invention.

  The display device includes a light emitting unit 20, a first region 11a, and a second region 11b.

  The light emitting unit 20 is a part that emits visible light.

  The first region 11a includes a light receiving unit 12a, a light collecting unit 13a, and a light emitting unit 14a. The light receiving portion 12a is a portion where the light 20a emitted from the light emitting portion 20 is incident, and the light emitting portion 14a is a portion that emits the light 20b transmitted through the light collecting portion 13a. The area of the light receiving portion 12a is larger than that of the light emitting portion 14a. The condensing part 13a is located between the light receiving part 12a and the light emitting part 14a. The condensing part 13a has a function in which the side surface (also referred to as an inner wall) reflects visible light.

  Moreover, the inner wall of the condensing part 13a has a curved shape so that the width continuously increases from the light emitting part 14a to the light receiving part 12a. In other words, in the cross section perpendicular to the light emitting surface of the light collecting portion 13a, the surfaces of the pair of inner walls facing each other have a shape obtained by cutting off a part of the hyperbola.

  The second region 11b has substantially the same shape as the first region 11a. The second region 11b includes a light receiving unit 12b, a light collecting unit 13b, and a light emitting unit 14b. The light receiving portion 12b is a portion where the light 20b emitted from the light emitting portion 14a in the first region 11a is incident, and the light emitting portion 14b is a portion that emits the light 20c transmitted through the condensing portion 13b.

  Here, the area of the light receiving portion 12b is preferably smaller than that of the light receiving portion 12a. Moreover, it is preferable that the area of the light emission part 14b is smaller than the area of the light emission part 14a.

  A part of the light 20a emitted from the light emitting unit 20 first enters the light receiving unit 12a of the first region 11a, passes through the light collecting unit 13a, and the light 20b is emitted from the light emitting unit 14a. At this time, the luminance of the light 20b emitted from the light emitting unit 14a is higher than the luminance of the light 20a emitted from the light emitting unit 20 (light flux per unit area).

  Further, most of the light 20b emitted from the light emitting part 14a in the first region 11a enters the light receiving part 12b, passes through the light collecting part 13b, and emits light 20c from the light emitting part 14b. At this time, the luminance of the light 20c emitted from the light emitting unit 14b is higher than the luminance of the light 20b incident on the light receiving unit 12b.

  Thus, the light 20c emitted through the first region 11a and the second region 11b has a much higher luminance than the light 20a emitted from the light emitting unit 20. In addition, when compared with the case where the first region 11a and the second region 11b are not provided (that is, the case where the light 20a is emitted as it is), the light 20a emitted by the light emitting unit 20 necessary to obtain the same luminance. The brightness can be lowered. For example, when an electroluminescent element is used for the light emitting unit 20, the current density flowing through the element can be reduced, and thus a decrease in reliability can be suppressed.

[Configuration Example 1-2]
FIG. 1B shows a configuration having a light reflecting portion 30. The light reflecting portion 30 has a function of emitting light 30a that is reflected light reflecting external light.

  The light reflecting portion 30 has an opening overlapping the light emitting portion 14b in the second region 11b, and the light 20c is emitted from the opening.

  Here, the area of the opening of the light reflecting portion 30 is preferably smaller than the area of the light emitting portion 20. The display device expresses gradation by the light 20c emitted from the light emitting unit 20 and having the luminance increased by the first region 11a and the second region 11b, and the light 30a reflected by the light reflecting unit 30. be able to.

  Here, the area of the part contributing to the display is the sum of the area of the light emitting unit 20 (light emitting area) and the area of the light reflecting unit 30 (reflective area). Therefore, when the ratio of the area of the portion contributing to display to the area of the display region of the display device is an aperture ratio, the aperture ratio can be greater than 100% and less than 200%. That is, the aperture ratio can be made extremely large compared to the case where the first region 11a and the second region 11b are not provided.

  A preferable value of the aperture ratio is, for example, more than 100% and less than 200%, preferably more than 120% and less than 200%, more preferably more than 140% and less than 200%. The higher the aperture ratio, the higher the maximum luminance that can be displayed by the display unit. Furthermore, as the aperture ratio is higher, deterioration of the light emitting element provided in the light emitting portion is suppressed, and the reliability of the display device can be improved.

  The above is the description of the configuration example 1.

[Configuration example 2]
Hereinafter, a more specific structure example of one embodiment of the present invention will be described with reference to the drawings.

  FIG. 2 is a perspective view of the display device 10 of one embodiment of the present invention as viewed from the display surface side. The display device 10 includes a substrate 21 and a substrate 31. In FIG. 2, the board | substrate 31 is shown with the broken line.

  The display device 10 includes a display unit 32, a circuit unit 34, wirings 35, and the like between the substrate 21 and the substrate 31. FIG. 2 shows an example in which an IC 37 and an FPC 36 are mounted on the substrate 31. Therefore, the display device 10 illustrated in FIG. 2 can also be referred to as a display module.

  As the circuit unit 34, for example, a circuit that functions as a scanning line driver circuit can be used.

  The wiring 35 has a function of supplying a signal and power to the display unit 32 or the circuit unit 34. The signal and power are input from the outside via the FPC 36 or input from the IC 37.

  2 shows an example in which the IC 37 is provided on the substrate 31 by a COG (Chip On Glass) method or the like. As the IC 37, for example, an IC having a function as a scan line driver circuit or a signal line driver circuit can be used. Note that the IC 37 may be omitted if not necessary. The IC 37 may be mounted on the FPC 36 by a COF (Chip On Film) method or the like.

[Cross-section configuration example 2-1]
Hereinafter, a cross-sectional configuration example of the display device of one embodiment of the present invention will be described.

  FIG. 3 shows a cross-sectional configuration example exemplified below. FIG. 3 is an example of a partial cross-sectional configuration of the display unit 32 of the display device 10 shown in FIG. The configuration illustrated in FIG. 3 is a more specific cross-sectional configuration example corresponding to the configuration illustrated in FIG.

  The display device 10 includes a light emitting element 60, a transistor 70, a first region 11a, and a second region 11b between the substrate 21 and the substrate 31. Further, an adhesive layer 99 is provided between the first region 11a and the second region 11b.

  The transistor 70 includes a conductive layer 71 that functions as a gate, a semiconductor layer 72, an insulating layer 82 that partially functions as a gate insulating layer, a conductive layer 73a that functions as one of a source and a drain, and the other of the source and the drain A conductive layer 73b functioning as In addition, the transistor 70 includes an insulating layer 83 that functions as a second gate insulating layer, and a conductive layer 74 that functions as a second gate.

  The transistor 70 is provided on the surface of the insulating layer 81 on the substrate 21 side. On the substrate 21 side of the insulating layer 81, there are an insulating layer 82 and an insulating layer 83 that respectively function as a gate insulating layer of the transistor 70, and an insulating layer 84, an insulating layer 85, an insulating layer 86, an insulating layer 87, and the like that cover the transistor 70. Is provided.

  The light emitting element 60 includes a conductive layer 61, a conductive layer 63, and an EL layer 62 positioned therebetween. An insulating layer 64 is provided so as to cover the conductive layer 63. The conductive layer 61 has a function of transmitting visible light, and the conductive layer 63 has a function of reflecting visible light. In other words, the light emitting element 60 is a so-called bottom emission type light emitting element that emits light toward the surface to be formed.

  The conductive layer 61 is provided on the substrate 21 side of the insulating layer 86. The conductive layer 61 is electrically connected to the conductive layer 73b through an opening provided in the insulating layer 86, the insulating layer 85, the insulating layer 84, and the insulating layer 83, whereby the light-emitting element 60, the transistor 70, and the like. Are electrically connected.

  Further, the insulating layer 64 and the substrate 21 are bonded together by an adhesive layer 89.

  An insulating layer 96 and an insulating layer 97 are stacked on the surface of the substrate 31 on the substrate 21 side. Further, the insulating layer 97 and the insulating layer 81 are bonded together by an adhesive layer 99.

  The insulating layer 85, the insulating layer 86, and the insulating layer 87 each preferably function as a planarization film, and preferably contain an organic resin. In addition, the insulating layer 81, the insulating layer 82, the insulating layer 83, and the insulating layer 84 preferably each include an inorganic insulating material.

  The first region 11 a is provided at a position overlapping the light emitting element 60. Hereinafter, the configuration of the first region 11a will be described. FIG. 4 shows an enlarged view of the first region 11a and the vicinity thereof.

  An opening is provided in the insulating layer 82 and the insulating layer 83, and an insulating layer 84 is provided to cover the opening. Further, the insulating layer 85 covering the insulating layer 84 is provided with an opening at a position overlapping with the opening provided in the insulating layer 82 and the insulating layer 83. Furthermore, a light reflecting layer 15 a is provided along the side surface of the opening of the insulating layer 85. An insulating layer 86 is provided so as to fill the opening of the insulating layer 85.

  The opening of the insulating layer 85 has a convex curved surface shape whose diameter continuously increases from the surface to be formed (substrate 31 side) to the substrate 21 side. In other words, the insulating layer 85 has a so-called tapered shape in which the angle formed by the side surface and the surface to be formed continuously decreases from the surface to be formed. Accordingly, the surface of the light reflecting layer 15a provided along the side surface of the opening of the insulating layer 85 has the same shape. That is, the surface of the light reflection layer 15a has a convex curved surface whose diameter continuously increases from the substrate 31 side to the substrate 21 side.

  The light receiving portion 12a corresponds to an end portion on the substrate 21 side in a region surrounded by the curved surface of the light reflecting layer 15a. More specifically, a point on the surface of the light reflecting layer 15a having an angle θ formed by a plane in contact with the surface of the light reflecting layer 15a and a plane parallel to the display surface (hereinafter also referred to as an inclination angle) is an angle θ. The area surrounded by the closed curve to be connected can be the light receiving unit 12a. Here, instead of the plane parallel to the display surface described above, the surface of the substrate 21, the surface of the substrate 31, the surface of the insulating layer 81, and the surface of the conductive layer 61 are estimated for the inclination angle of the surface of the light reflecting layer 15 a. The reference plane may be used. The angle θ can be greater than 45 degrees and 90 degrees or less.

  Further, the light reflection layer 15a has a portion whose surface inclination angle is 50 degrees or more, preferably 60 degrees or more, more preferably 70 degrees or more, and further preferably 80 degrees or more, and 90 degrees or less. Is preferred. The closer the tilt angle is to 90 degrees, the more preferable is the light reflection frequency at the light collecting portion 13a is reduced.

  Alternatively, a region surrounded by a closed curve connecting the end portions on the substrate 21 side of the light reflecting layer 15a may be used as the light receiving unit 12a.

  The light emitting portion 14a corresponds to a region surrounded by a closed curve connecting the end portions on the substrate 31 side of the light reflecting layer 15a.

  The condensing part 13a is corresponded to the area | region between the light-receiving part 12a and the light emission part 14a.

  The greater the difference between the area of the light emitting part 14a and the area of the light receiving part 12a, the higher the intensity of light emitted from the light emitting part 14a. For example, the area of the light receiving unit 12a is larger than 1 times the area of the light emitting unit 14a and 100 times or less, preferably 1.5 times or more and 50 times or less, more preferably 2 times or more and 25 times or less. .

  Moreover, it is preferable that the height of the first region 11a is higher. In other words, it is preferable that the distance between the light receiving unit 12a and the light emitting unit 14a or the height of the light collecting unit 13a is larger. For example, in the cross section of the first region 11a, the ratio of the height of the first region 11a to the width of the light emitting portion 14a is 0.5 or more and 10 or less, preferably 0.6 or more and 5 or less, more preferably. Preferably has a portion that is 0.7 or more and 3 or less.

  Moreover, it is preferable that the insulating layer 86 located in the condensing part 13a has a high refractive index. More specifically, the insulating layer 86 is preferably made of a material having a higher refractive index than at least one of the insulating layer 85, the insulating layer 83, the insulating layer 82, the insulating layer 81, and the adhesive layer 99. For example, it is preferable to use a material having an absolute refractive index greater than 1 and 2.5 or less, preferably 1.2 or more and 2.0 or less, and more preferably 1.3 or more and 1.9 or less.

  As the light reflecting layer 15a, it is preferable to use a material having a high reflectance with respect to light in the visible light region. For example, it is preferable to use a material containing aluminum or silver.

  The above is the description of the first region 11a.

  As shown in FIG. 3, the second region 11 b includes an opening provided in the insulating layer 96, a light reflecting layer 15 b provided along a side surface of the opening of the insulating layer 96, and an opening in the insulating layer 96. Part of the insulating layer 97 provided so as to fill the portion.

  The second region 11b includes a light receiving unit 12b, a light collecting unit 13b, and a light emitting unit 14b. The description of the first region 11a can be used for the preferable shape and configuration of the second region 11b.

  In the configuration illustrated in FIG. 3, an example in which a part of the insulating layer 82 and the insulating layer 83 is opened and is not located on the optical path of the light emitting element 60 is illustrated. Thus, by reducing the number of interfaces existing on the optical path of the light emitting element 60 as much as possible, the influence of interface scattering can be reduced and the light extraction efficiency can be increased.

  An insulating layer 84 is provided so as to cover the side surfaces of the openings of the insulating layer 82 and the insulating layer 83. Accordingly, the side surfaces of the insulating layer 82 and the insulating layer 83 are not exposed, so that impurities diffuse into the transistor 70 through the interface between the insulating layer 81 and the insulating layer 82 or the interface between the insulating layer 82 and the insulating layer 83. Can be prevented.

  The above is the description of the cross-sectional configuration example 2-1.

[Cross-section configuration example 2-2]
Hereinafter, as an example of a display device of one embodiment of the present invention, a display device that includes both a reflective liquid crystal element and a light-emitting element and can perform display in a light-emitting mode, a reflective mode, and a hybrid mode ( An example of a display panel) will be described. Such a display panel can also be called ER-Hybrid Display (Emission and Reflection Hybrid Display or Emission / Reflection Hybrid Display).

  As an example of such a display panel, there is a configuration in which a liquid crystal element including an electrode that reflects visible light and a light emitting element are stacked. At this time, it is preferable that the electrode that reflects visible light has an opening, and the opening and the light-emitting element are overlaid. Thereby, in the light emission mode, it can drive so that the light from a light emitting element may be inject | emitted through the said opening. In addition, in a plan view, the size of a pixel including both the liquid crystal element and the light emitting element can be reduced by stacking and arranging the liquid crystal element and the light emitting element side by side. A higher definition display device can be realized.

  Such a display panel can be driven with extremely low power consumption by displaying in a reflection mode in a place with bright external light such as outdoors. Further, in a place where the outside light is dark such as at night or indoors, an image can be displayed with an optimum luminance by displaying in the light emission mode. Furthermore, by displaying in both the light emission mode and the reflection mode, it is possible to perform display with low power consumption and high contrast as compared with a conventional display panel even in a place where the outside light is extremely bright. .

  FIG. 5 shows a cross-sectional configuration example exemplified below. The configuration illustrated in FIG. 5 is a more specific cross-sectional configuration example corresponding to the configuration illustrated in FIG. Further, the configuration shown in FIG. 5 is mainly different from the configuration illustrated in FIG. 3 in the configuration between the adhesive layer 99 and the substrate 31. 5 includes a transistor 70a instead of the transistor 70 illustrated in FIG.

  The display device includes the liquid crystal element 40, the connection portion 80, the transistor 70b, the second region 11b, the coloring layer 54, and the like between the adhesive layer 99 and the substrate 31. An insulating layer 91 and an insulating layer 92 are provided between the transistor 70 b and the liquid crystal element 40.

  The transistor 70b is provided on the surface of the insulating layer 92 on the substrate 21 side. On the substrate 21 side of the insulating layer 92, an insulating layer 93, an insulating layer 94, an insulating layer 95, an insulating layer 96, an insulating layer 97, and the like are stacked. A part of each of the insulating layers 93 and 94 functions as a gate insulating layer of the transistor 70b. The insulating layer 96 and the insulating layer 97 each preferably function as a planarization layer.

  On the substrate 31 side of the insulating layer 92, a conductive layer 23a and a conductive layer 23b are stacked. An insulating layer 91 is provided to cover the conductive layer 23a and the conductive layer 23b. An alignment film 26a is provided on the substrate 31 side of the conductive layer 23a. On the other hand, a conductive layer 25 and an alignment film 26b are stacked on the surface of the substrate 31 on the substrate 21 side. The liquid crystal 24 is sandwiched between the alignment film 26a and the alignment film 26b. A liquid crystal element 40 is configured by the conductive layer 23 a, the liquid crystal 24, and the conductive layer 25.

  In addition, the display device includes a connection portion 80 that electrically connects conductive layers provided on both surfaces of the insulating layer 91. In FIG. 5, the connection portion 80 includes an opening provided in the insulating layer 91 and the insulating layer 92, a conductive layer that is located in the opening and is obtained by processing the same conductive film as the gate of the transistor 70 b and the like, The structure which has is shown. One of the source and the drain of the transistor 70 b and the conductive layer 23 b are electrically connected through the connection portion 80.

  As shown in FIG. 5, since the surface of the conductive layer 23 a is flat in the region overlapping with the connection portion 80, the portion where the connection portion 80 is provided can also function as the display region of the liquid crystal element 40. In particular, in a high-definition display device, since the ratio of the area of the connection portion 80 to the area occupied by one pixel is high, a high aperture ratio can be realized by using this region as a display region.

  The conductive layer 23a has a function of transmitting visible light. The conductive layer 23b has a function of reflecting visible light. Accordingly, the liquid crystal element 40 functions as a reflective liquid crystal element.

  The conductive layer 23b that reflects visible light is provided with an opening in a region overlapping the light emitting element 60, the first region 11a, and the second region 11b. Light emitted from the light emitting element 60 is emitted toward the substrate 31 through the opening, the conductive layer 23a that transmits visible light, and the like.

  The configuration of the second region 11b will be described. An insulating layer 91 is provided to cover the opening of the conductive layer 23b described above. In addition, an opening is formed in the insulating layer 92, the insulating layer 93, and the insulating layer 94 at a position overlapping with the opening, and an insulating layer 95 is provided to cover the side surface of the opening. The insulating layer 96 is provided with openings at positions overlapping the openings of the insulating layer 92, the insulating layer 93, and the insulating layer 94. Further, a light reflecting layer 15 b is provided along the side surface of the opening of the insulating layer 96 and the side surface of the insulating layer 95. An insulating layer 87 is provided so as to fill the opening of the insulating layer 96.

  The second region 11b includes a light receiving unit 12b, a light collecting unit 13b, and a light emitting unit 14b. The above description can be used for the preferable shape and configuration of the second region 11b.

  A colored layer 54 is provided between the first region 11a and the second region 11b. The colored layer 54 is provided on the surface of the insulating layer 97 on the substrate 21 side.

  Since the display device illustrated in FIG. 5 includes the transistor 70a electrically connected to the light emitting element 60 and the transistor 70b electrically connected to the liquid crystal element 40, the liquid crystal element 40 and the light emitting element 60 are controlled independently. Is possible.

  In FIG. 5, the color layer is not provided between the liquid crystal element 40 and the substrate 31. However, as shown in FIG. 6, the color layer 54 a may be provided. At this time, an insulating layer 98 functioning as a planarization layer is preferably provided between the colored layer 54 a and the conductive layer 25. At this time, the colored layer 54 may not be provided, and in that case, the distance between the first region 11a and the second region 11b can be reduced.

[Example of production method]
Hereinafter, an example of a method for manufacturing a display device of one embodiment of the present invention will be described with reference to drawings. Here, a method for manufacturing the display device illustrated in the cross-sectional configuration example 2-2 and FIG. 5 will be described.

  Each of the drawings shown in FIGS. 7 to 13 is a schematic cross-sectional view at each stage of the process according to the manufacturing method described below.

  Note that a thin film (an insulating film, a semiconductor film, a conductive film, or the like) included in the display device can be formed using a sputtering method, a chemical vapor deposition (CVD) method, a vacuum evaporation method, or a pulse laser deposition (PLD: Pulse Laser Deposition). ) Method, atomic layer deposition (ALD: Atomic Layer Deposition) method, or the like. The CVD method may be a plasma enhanced chemical vapor deposition (PECVD) method or a thermal CVD method. As an example of the thermal CVD method, a metal organic chemical vapor deposition (MOCVD) method may be used.

  Thin films (insulating films, semiconductor films, conductive films, etc.) that constitute display devices are spin coat, dip, spray coating, ink jet, dispense, screen printing, offset printing, doctor knife, slit coat, roll coat, curtain coat. It can be formed by a method such as knife coating.

  Further, when a thin film included in the display device is processed, the thin film can be processed using a photolithography method or the like. Alternatively, an island-shaped thin film may be formed by a film formation method using a shielding mask. Alternatively, the thin film may be processed by a nanoimprint method, a sand blast method, a lift-off method, or the like.

  As a photolithography method, a resist mask is formed on a thin film to be processed, the thin film is processed by etching or the like, and the resist mask is removed. After forming a photosensitive thin film, exposure and development are performed. And a method for processing the thin film into a desired shape.

  In photolithography, light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or light obtained by mixing these. In addition, ultraviolet light, KrF laser light, ArF laser light, or the like can be used. Further, exposure may be performed by an immersion exposure technique. Further, extreme ultraviolet light (EUV: Extreme Ultra-violet) or X-rays may be used as light used for exposure. Further, an electron beam can be used instead of the light used for exposure. It is preferable to use extreme ultraviolet light, X-rays, or an electron beam because extremely fine processing is possible. Note that a photomask is not necessary when exposure is performed by scanning a beam such as an electron beam.

  For etching the thin film, a dry etching method, a wet etching method, a sand blasting method, or the like can be used.

[Formation of Release Layer 43a and Insulating Layer 81]
First, the separation layer 43a and the insulating layer 81 are formed over the supporting substrate 44a (FIG. 7A).

  As the support substrate 44a, a substrate that is rigid to such an extent that it can be easily transferred within the apparatus or between apparatuses can be used. In addition, a substrate having heat resistance to heat applied in the manufacturing process is used. For example, a glass substrate having a thickness of 0.3 mm to 1 mm can be used.

  As a material used for the peeling layer 43a and the insulating layer 81, a material that causes peeling in the interface between the peeling layer 43a and the insulating layer 81 or in the peeling layer 43a can be selected.

  For example, a layer containing a refractory metal material such as tungsten and a layer containing an oxide of the metal material are stacked as the separation layer 43a, and silicon nitride, silicon oxide, silicon oxynitride, or oxynitride is used as the insulating layer 82 A layer of an inorganic insulating material such as silicon can be stacked. Note that in this specification, oxynitride refers to a material having a higher oxygen content than nitrogen as its composition, and nitride oxide refers to a material having a higher nitrogen content than oxygen as its composition. Point to. It is preferable to use a refractory metal material for the peeling layer 43a because processing at a high temperature is possible in the subsequent steps, and the degree of freedom in selecting a material and a formation method is increased.

  In the case where a stacked layer structure of tungsten and tungsten oxide is used as the separation layer 43a, separation can be performed at the interface between tungsten and tungsten oxide, in tungsten oxide, or at the interface between tungsten oxide and the insulating layer 82.

  Alternatively, an organic resin may be used as the peeling layer 43a, and peeling may be performed at the interface between the support substrate 44a and the peeling layer 43a, or in the peeling layer 43a, or at the interface between the peeling layer 43a and the insulating layer 81.

  As the release layer 43a, a polyimide resin can be typically used. A polyimide resin is preferable because of its excellent heat resistance. In addition, as the peeling layer 43a, acrylic resin, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene resin, phenol resin, or the like can be used.

  The release layer 43a containing an organic resin is first a resin precursor by a method such as spin coating, dip, spray coating, ink jet, dispensing, screen printing, offset printing, doctor knife, slit coating, roll coating, curtain coating, knife coating, etc. A mixed material of the solvent and the solvent is formed on the support substrate 44a. Then, by performing heat treatment, the material can be cured while removing the solvent and the like, and the release layer 43a containing an organic resin can be formed.

  For example, when polyimide is used for the release layer 43a, a resin precursor in which an imide bond is generated by dehydration can be used. Alternatively, a material containing a soluble polyimide resin may be used.

  When an organic resin is used for the release layer 43a, either a photosensitive or non-photosensitive resin may be used. Since photosensitive polyimide is a material that is suitably used for a planarization film or the like of a display panel, a forming apparatus and a material can be shared. Therefore, no new device or material is required to realize the structure of one embodiment of the present invention. In addition, by using a photosensitive resin material, the release layer 43a can be processed by performing exposure and development processing. For example, an opening can be formed or an unnecessary portion can be removed. Further, by optimizing the exposure method and exposure conditions, it is possible to form a concavo-convex shape on the surface. For example, an exposure technique using a halftone mask or a gray tone mask, a multiple exposure technique, or the like may be used.

  When an organic resin is used for the peeling layer 43a, the peeling property may be improved by locally heating the peeling layer 43a. For example, irradiation with laser light can be given as a heating method. At this time, it is preferable to irradiate the laser beam by using a linear laser as the laser beam and scanning it. Thereby, the process time at the time of enlarging the area of a support substrate can be shortened. As the laser light, an excimer laser having a wavelength of 308 nm can be suitably used.

  Alternatively, a layer containing oxygen, hydrogen, water, or the like is provided in contact with the separation layer 43a, and oxygen, hydrogen, water, or the like is supplied into the separation layer 43a or the interface between the separation layer 43a and the layer by heat treatment. By doing so, the peelability may be improved. Accordingly, since it is not necessary to use a laser device or the like, a display device can be manufactured at a lower cost.

  In addition, the peeling layer 43 a may remain on the light path of the light emitting element 60 or the liquid crystal element 40 after peeling. When the peeling layer 43a absorbs part of visible light, the light transmitted through the peeling layer 43a may be colored. Therefore, it is preferable to remove this after peeling. For example, the remaining peeling layer 43a can be removed by plasma treatment (also referred to as ashing treatment) in an atmosphere containing oxygen.

[Formation of Transistor 70a]
Subsequently, a conductive layer 71 is formed over the insulating layer 81. The conductive layer 71 can be formed by forming a conductive film, forming a resist mask, etching the conductive film, and then removing the resist mask.

  Subsequently, an insulating layer 82 is formed so as to cover the insulating layer 81 and the conductive layer 71.

  Subsequently, the semiconductor layer 72 is formed. The semiconductor layer 72 can be formed by forming a semiconductor film, forming a resist mask, etching the semiconductor film, and then removing the resist mask.

  Subsequently, a conductive layer 73a and a conductive layer 73b are formed. The conductive layer 73 a and the conductive layer 73 b can be formed by a method similar to that of the conductive layer 71.

  Subsequently, an insulating layer 83 is formed so as to cover the insulating layer 82, the conductive layer 73 a, the conductive layer 73 b, and the semiconductor layer 72.

  Subsequently, a conductive layer 74 that overlaps with the semiconductor layer 72 is formed over the insulating layer 83. The conductive layer 74 can be formed by a method similar to that of the conductive layer 71.

  Through the above steps, the transistor 70a can be formed (FIG. 7B).

(Formation of opening)
Subsequently, openings are formed in the insulating layer 83 and the insulating layer 82. The opening can be formed by forming a resist mask over the insulating layer 83 and sequentially etching the insulating layer 83 and the insulating layer 82. At this time, it is preferable to perform the etching under a condition that the insulating layer 81 is not lost by the etching. Note that when the insulating layer 84 to be formed later and the separation layer 43a can be separated, or when separation is performed between the separation layer 43a and the support substrate 44a, the insulating layer 81 is also removed by etching. Also good.

[Formation of Insulating Layer 84]
Subsequently, an insulating layer 84 is formed to cover the transistor 70a (FIG. 7C). The insulating layer 84 is provided to cover the side surfaces in the openings of the insulating layer 83 and the insulating layer 82.

  For the insulating layer 84, it is preferable to use a material in which water, hydrogen, and the like are difficult to diffuse. For example, an inorganic insulating film can be used as the insulating layer 84. As the insulating layer 84, a layer of an inorganic insulating material such as silicon nitride, silicon oxide, silicon oxynitride, silicon nitride oxide, aluminum oxide, aluminum nitride, aluminum oxynitride, or aluminum nitride oxide is formed as a single layer or a stacked layer. Can be used. Thus, the insulating layer 84 functions as a protective layer for the transistor 70a.

  Note that as illustrated in FIG. 7C, the insulating layer 82 and the insulating layer 83 are preferably processed so that side surfaces of the opening portions of the insulating layer 82 and the insulating layer 83 have a tapered shape. Thus, part of the insulating layer 84 covering the side surfaces of the insulating layer 82 and the insulating layer 83 can be inclined as shown in FIG.

[Formation of Insulating Layer 85 and Light Reflecting Layer 15a]
Subsequently, an insulating layer 85 having an opening is formed so as to cover the insulating layer 84. By using a photosensitive material for the insulating layer 85, the opening can be formed by a photolithography method or the like. Note that after the insulating film is formed as the insulating layer 85, an opening may be formed by etching part of the insulating film using a resist mask. It is preferable to use an organic insulating material for the insulating layer 85 because the flatness of the upper surface can be improved.

  As described above, since the insulating layer covering the transistor 70a has a stacked structure of the insulating layer 84 including an inorganic insulating material and the insulating layer 85 including an organic insulating material, both barrier properties and flatness can be achieved. preferable.

  In addition, by using an organic insulating material for the insulating layer 85, the shape in the vicinity of the opening of the insulating layer 84 can be easily changed to a gently curved shape.

  Subsequently, the light reflection layer 15a is formed (FIG. 7D). The light reflecting layer 15a can be formed by forming a light reflective film, forming a resist mask, etching the light reflective film, and then removing the resist mask.

  As the light reflecting film used for the light reflecting layer 15a, for example, a metal film or an alloy film can be used.

[Formation of Insulating Layer 86]
Subsequently, an insulating layer 86 is formed so as to cover the insulating layer 85 and the light reflecting layer 15a (FIG. 7E). The insulating layer 86 is formed so as to fill the concave portion in a portion overlapping with the opening formed in the insulating layer 82, the insulating layer 83, and the insulating layer 85. It is preferable to use an organic insulating material as the insulating layer 86 because the embedding property of the recess and the flatness of the surface can be improved.

  By forming the insulating layer 86, the first region 11a is formed.

[Formation of Conductive Layer 61 and Insulating Layer 87]
Subsequently, an opening reaching the conductive layer 73b and the like is formed in the insulating layer 86, the insulating layer 85, the insulating layer 84, and the insulating layer 83.

  Subsequently, a conductive layer 61 that is electrically connected to the conductive layer 73 b is formed over the insulating layer 86. The conductive layer 61 can be formed by a method similar to that of the conductive layer 71 and the like.

  Subsequently, an insulating layer 87 covering the end portion of the conductive layer 61 is formed (FIG. 8A). The insulating layer 87 can be formed by a method similar to that for the insulating layer 85 or the like.

[Formation of Light-Emitting Element 60]
Subsequently, an EL layer 62 and a conductive layer 63 are stacked over the portion where the upper surface of the conductive layer 61 is exposed and the insulating layer 87. Thereby, the light emitting element 60 is formed.

  The EL layer 62 can be typically formed by an evaporation method. In the case where at least one layer of the EL layer 62 is separately formed between pixels, the EL layer 62 can be formed by an evaporation method using a shielding mask such as a metal mask. Further, the EL layer 62 may be formed using an inkjet method or the like.

[Formation of Insulating Layer 64]
Subsequently, the insulating layer 64 is preferably formed over the conductive layer 63. The insulating layer 64 is preferably formed by a film formation method such as a sputtering method or an ALD method that can form a dense film even when the formation temperature is lowered. Alternatively, a stacked structure of a film including an inorganic insulating material and a film including an organic insulating material may be employed.

  For example, it is preferable to form the insulating layer 64 having a stacked structure by forming an insulating film on the conductive layer 63 by a sputtering method and further forming an insulating film thereon by an ALD method. The sputtering method is easy to increase the deposition rate, and is suitable for forming an insulating film that is thick enough to obtain sufficient barrier performance. Furthermore, since the ALD method is a film formation method with extremely high step coverage, pinholes and defects in the insulating film formed by the sputtering method can be filled. By such a method, the insulating layer 64 having an extremely excellent barrier property can be formed.

[Lamination of substrate 21]
Subsequently, the insulating layer 64 and the substrate 21 are bonded using the adhesive layer 89 (FIG. 8C). As the adhesive layer 89, a curable resin or the like can be used.

[Peeling of support substrate 44a]
Subsequently, the supporting substrate 44a and the peeling layer 43a are removed by peeling between the insulating layer 81 and the peeling layer 43a (FIG. 9A).

  As a method for separating the insulating layer 81 and the support substrate 44a, mechanical force is applied, the release layer is etched, a liquid is dropped on the end of the support substrate 44a, or the support substrate 44a is liquidized. For example, it is impregnated with a liquid, and a liquid is allowed to permeate the peeling interface. Alternatively, peeling may be performed by heating or cooling the support substrate 44a using a difference in thermal expansion coefficient between the two layers forming the peeling interface.

  Moreover, you may perform the process which exposes a part of peeling interface before peeling. For example, a part of the insulating layer 81 on the peeling layer 43a is removed by a laser or a sharp member. Thereby, peeling can be advanced from the part from which the insulating layer 81 is removed as a starting point (starting point).

  Further, as described above, the peelability may be improved by irradiating the release layer 43a with laser light. Alternatively, the peelability may be improved by performing heat treatment in the process from the formation of the release layer 43a to the release process.

  After the separation, a part of the separation layer 43a may remain on the surface of the insulating layer 81. In that case, the remaining peeling layer 43a may be removed by cleaning, etching, plasma treatment, wiping, or the like. Further, when the remaining peeling layer 43a does not affect the operation of the display device 10 or the display quality, it may not be removed. In that case, a layer containing an element contained in the peeling layer 43a remains between the insulating layer 81 and an adhesive layer 99 described later.

  A schematic cross-sectional view at this stage corresponds to FIG.

[Formation of Release Layer 43b and Insulating Layer 45]
A peeling layer 43b and an insulating layer 45 are stacked over the supporting substrate 44b.

  As the support substrate 44b, a substrate similar to the support substrate 44a can be used. The peeling layer 43b and the insulating layer 45 can be formed by a method similar to that of the peeling layer 43a or the insulating layer 81.

[Formation of Conductive Layer 23a and Conductive Layer 23b]
Subsequently, a conductive layer 23 a is formed on the insulating layer 45. As the conductive layer 23a, an oxide conductive material is preferably used. By using an oxide conductive material for the conductive layer 23a, light can be transmitted even if the conductive layer 23a is located in a region overlapping with a second region 11b described later. As the conductive layer 23a, for example, a metal oxide or a low-resistance oxide semiconductor material can be used.

  In the case where an oxide semiconductor material is used for the conductive layer 23a, the carrier density may be increased by causing oxygen vacancies in the oxide semiconductor material by plasma treatment, heat treatment, or the like. The carrier density may be increased by introducing impurities such as rare gas such as argon in addition to hydrogen and nitrogen into the oxide semiconductor material. Alternatively, as the conductive layer 23b formed over the conductive layer 23a, oxygen in the oxide semiconductor may be reduced by using a material in which oxygen is easily diffused. Two or more methods described above may be applied.

  Subsequently, a conductive layer 23b having an opening is formed over the conductive layer 23a (FIG. 10A). As the conductive layer 23b, a single layer structure including a metal or an alloy material, or a stacked structure can be used. In the case of using a stacked structure as the conductive layer 23b, it is preferable to use a material having higher reflectance than the other layers for the layer in contact with the conductive layer 23a.

[Formation of Insulating Layer 91 and Insulating Layer 92]
Subsequently, an insulating layer 91 and an insulating layer 92 are stacked to cover the conductive layer 23a and the conductive layer 23b (FIG. 10B). It is preferable to use an inorganic insulating material for each of the insulating layer 91 and the insulating layer 92.

  Note that in FIG. 10B and the like, the top surface of the insulating layer 92 is shown to be flat, but actually, the insulating layer 92 may have a concavo-convex shape reflecting the top surface shape of the layer provided below.

[Formation of connecting portion 80]
Subsequently, an opening reaching the conductive layer 23 b is formed in the insulating layer 92 and the insulating layer 91.

  Subsequently, a conductive layer 71 is formed over the insulating layer 92. At the same time, a conductive layer electrically connected to the conductive layer 23b is formed in the insulating layer 92 and a portion overlapping the opening provided in the insulating layer 91. Thus, the connection portion 80 can be formed (FIG. 10C).

[Formation of Transistor 70b]
Subsequently, the transistor 70b is formed by forming the insulating layer 93, the semiconductor layer 72, the conductive layer 73a, the conductive layer 73b, the insulating layer 94, and the conductive layer 74 (FIG. 10D).

  The insulating layer 93 and the insulating layer 94 can be formed by a method similar to that for the insulating layer 82 or the insulating layer 83.

(Formation of opening)
Subsequently, openings are formed in the insulating layer 94, the insulating layer 93, and the insulating layer 92. The opening can be formed by forming a resist mask over the insulating layer 94 and sequentially etching the insulating layer 94, the insulating layer 93, and the insulating layer 92. At this time, it is preferable to perform the etching under the condition that the insulating layer 91 is not lost by the etching.

[Formation of insulating layer 95]
Subsequently, an insulating layer 95 is formed to cover the transistor 70b (FIG. 10E). The insulating layer 95 is provided to cover the side surfaces of the insulating layer 94, the insulating layer 93, and the opening of the insulating layer 92. The insulating layer 95 can be formed by a method similar to that for the insulating layer 84.

[Formation of Insulating Layer 96 and Light Reflecting Layer 15b]
Subsequently, an insulating layer 96 having an opening is formed so as to cover the insulating layer 95. The insulating layer 96 can be formed by a method similar to that of the insulating layer 85.

  Subsequently, a light reflecting layer 15b located in the opening of the insulating layer 96 is formed (FIG. 11A). The light reflecting layer 15b can be formed by the same method as the light reflecting layer 15a.

[Formation of insulating layer 97]
Subsequently, an insulating layer 97 is formed to cover the insulating layer 96 and the light reflecting layer 15b. The insulating layer 97 is formed so as to fill a recess in a portion overlapping with the opening formed in the insulating layer 92, the insulating layer 93, the insulating layer 94, and the insulating layer 96. The insulating layer 97 can be formed by a method similar to that for the insulating layer 86.

  By forming the insulating layer 96, the second region 11b is formed.

  Subsequently, a colored layer 54 is formed over the insulating layer 96 (FIG. 11B). The colored layer 54 can be formed by a method similar to that for the insulating layer 85 and the like.

[Lamination of support substrate 44c]
Subsequently, the support substrate 44c and the insulating layer 97 are bonded using the adhesive layer 46a. The support substrate 44c can be made of the same material as the support substrate 44a. The adhesive layer 46a is preferably made of a material that can be easily peeled later. For example, an adhesive material, a double-sided tape, a silicone sheet, or a water-soluble adhesive can be used as the adhesive layer 46a.

[Peeling of support substrate 44b]
Subsequently, peeling is performed between the peeling layer 43b and the insulating layer 45, and the support substrate 44b and the peeling layer 43b are removed (FIG. 11C).

[Removal of insulating layer 45]
Subsequently, the insulating layer 45 is removed. The insulating layer 45 can be removed by, for example, a dry etching method or a wet etching method. By removing the insulating layer 45, the surface of the conductive layer 23b is exposed.

  Note that in the case where the insulating layer 45 has a light-transmitting property, it may not be removed. In that case, if the insulating layer 45 is too thick, the driving voltage of the liquid crystal element 40 may increase. Therefore, the insulating layer 45 may be thinned by the etching method.

[Formation of Alignment Film 26a]
Subsequently, an alignment film 26a is formed over the conductive layer 23a (FIG. 12A). The alignment film 26a can be formed by performing a rubbing process after forming a thin film.

  When an organic resin is used as the insulating layer 45, the alignment film 26a may be formed by rubbing without removing it. Alternatively, when an organic resin is used for the peeling layer 43b and peeling is performed between the peeling layer 43b and the support substrate 44b, the alignment film 26a may be formed by rubbing without removing the peeling layer 43b. At this time, the insulating layer 45 is preferably formed thin in advance or the insulating layer 45 is not provided.

[Preparation of substrate 31]
Subsequently, a substrate in which the conductive layer 25, the alignment film 26b, and the like are formed on the substrate 31 in advance is prepared. The conductive layer 25 and the alignment film 26b may be formed by the same method as the conductive layer 23a or the alignment film 26a, respectively.

[Lamination of support substrate 44c and substrate 31]
Subsequently, an adhesive layer (not shown) is formed on one or both of the support substrate 44 c and the substrate 31. The adhesive layer is formed so as to surround a region where the pixels are arranged. The adhesive layer can be formed by, for example, a screen printing method or a dispensing method. As the adhesive layer, a thermosetting resin, an ultraviolet curable resin, or the like can be used. Alternatively, a resin that is cured by applying heat after being temporarily cured by ultraviolet rays may be used. Alternatively, as the adhesive layer, a resin having both ultraviolet curable properties and thermosetting properties may be used.

  Subsequently, the composition containing the liquid crystal 24 is dropped onto a region surrounded by the adhesive layer by a dispensing method or the like. Further, the composition may contain a chiral agent or the like.

  Subsequently, the support substrate 44c and the substrate 31 are bonded so as to sandwich the liquid crystal 24, and the adhesive layer is cured. Bonding is preferably performed in a reduced-pressure atmosphere because air bubbles can be prevented from being mixed between the support substrate 44c and the substrate 31.

  Note that the composition containing the liquid crystal 24 may be injected from a gap provided in the adhesive layer in a reduced-pressure atmosphere after the support substrate 44c and the substrate 31 are bonded to each other. In addition, after the composition containing the liquid crystal 24 is dropped, a granular gap spacer may be arranged in the region where the pixels are arranged or outside the region, or the composition containing the gap spacer may be dropped. .

  The liquid crystal element 40 is formed by bonding the substrate 31 and the support substrate 44c. A schematic cross-sectional view at this stage corresponds to FIG.

[Removal of support substrate 44c]
Subsequently, the adhesive layer 46a and the support substrate 44c are removed.

  A schematic cross-sectional view at this stage corresponds to FIG.

[Lamination of substrate 21 and substrate 31]
Finally, as shown in FIG. 13, after bonding the substrate 21 and the substrate 31 with the adhesive layer 99 interposed therebetween, the adhesive layer 99 is cured.

  The adhesive layer 99 may be formed by applying to one or both of the substrate 21 and the substrate 31. For example, it can be formed by a screen printing method, a dispensing method, or the like. Alternatively, as the adhesive layer 99, for example, a sheet-like or film-like adhesive may be used. For example, an OCA (Optical Clear Adhesive) film can be suitably used.

  Through the above steps, the display device illustrated in FIG. 5 can be manufactured.

[Modification]
Hereinafter, an example of a cross-sectional configuration different from the cross-sectional configuration example 2 described above and a part of the configuration will be described.

[Modification 1]
FIG. 14A shows a cross-sectional configuration in which a portion between the adhesive layer 99 and the liquid crystal 24 of the display device is extracted. The structure illustrated in FIG. 14A is mainly different from the structure illustrated in FIG. 5 in that the insulating layer 96 is not provided.

  In FIG. 14A, the light reflecting layer 15b is provided so as to cover a part of the insulating layer 95 located in the opening. With such a structure, since the insulating layer 96 can be omitted, manufacturing cost can be reduced and a thin display device can be realized.

[Modification 2]
The structure illustrated in FIG. 14B is mainly different from the structure illustrated in FIG. 5 in that the position of the colored layer 54 is different.

  The colored layer 54 is located between the insulating layer 97 and the insulating layer 95. Furthermore, the colored layer 54 is formed so as to fill an opening formed by the insulating layer 92, the insulating layer 93, the insulating layer 94, and the insulating layer 96. A part of the colored layer 54 is provided in contact with the light reflecting layer 15b.

  With such a structure, it is not necessary to form the colored layer 54 so as to protrude from the surface of the insulating layer 97, so that a thin display device can be realized.

  Further, the light that is repeatedly reflected by the light reflecting layer 15b passes through the inside of the colored layer 54, so that it is possible to emit light with higher color purity.

[Modification 3]
The structure illustrated in FIG. 14C is mainly different from the structure illustrated in FIG. 5 in that the insulating layer 96 is not provided and the position of the coloring layer 54 is different.

  In FIG. 14C, the colored layer 54 is located between the insulating layer 97 and the insulating layer 95. Further, the colored layer 54 is formed so as to fill an opening formed by the insulating layer 92, the insulating layer 93, and the insulating layer 94. A part of the colored layer 54 is provided in contact with the light reflecting layer 15b. Thereby, a thin display device can be realized.

  Further, the light that is repeatedly reflected by the light reflecting layer 15b passes through the inside of the colored layer 54, so that it is possible to emit light with higher color purity.

[Modification 4]
FIG. 15A shows a cross-sectional configuration in which a portion between the substrate 21 and the adhesive layer 99 is extracted. The structure illustrated in FIG. 15A is mainly different from the structure illustrated in FIG. 5 in that the coloring layer 54 is included.

  The colored layer 54 is located between the insulating layer 84 and the insulating layer 86. Further, the colored layer 54 is formed so as to fill an opening formed by the insulating layer 82, the insulating layer 83, and the insulating layer 85. A part of the colored layer 54 is provided in contact with the light reflecting layer 15a.

  By setting it as such a structure, the light inject | emitted from the 1st area | region 11a is inject | emitted in the colored state. In addition, since the distance between the colored layer 54 and the light emitting element 60 can be reduced, color mixing between adjacent pixels can be effectively suppressed.

[Modification 5]
The structure illustrated in FIG. 15B is mainly different from the structure illustrated in FIG. 5 in that the shape of the insulating layer 86 is different.

  In FIG. 15B, the insulating layer 86 is formed in and near the opening formed by the insulating layer 82, the insulating layer 83, and the insulating layer 85. The insulating layer 85 and the insulating layer 87 are provided in contact with each other.

  Further, the insulating layer 86 has a shape having a curved surface protruding toward the substrate 21 side. Accordingly, the conductive layer 61, the EL layer 62, and a part of the conductive layer 63 formed along the surface of the insulating layer 86 on the substrate 21 side also have a curved shape. With such a configuration, light emitted from the EL layer 62 is likely to be emitted toward the central portion of the first region 11a, so that the extraction efficiency can be further increased compared to the configuration illustrated in FIG. it can.

  The above is the description of the modified example.

[About transistors]
Hereinafter, structural examples of transistors that can be used for the display device of one embodiment of the present invention are described.

  The transistor exemplified below can be used in place of the transistor 70, the transistor 70a, the transistor 70b, or the like.

  A transistor 110 illustrated in FIG. 16A is a bottom-gate transistor.

  The transistor 110 is provided over the insulating layer 131. The transistor 110 includes a conductive layer 111 functioning as a gate electrode, a part of the insulating layer 132 functioning as a gate insulating layer, a semiconductor layer 112, a conductive layer 113a functioning as one of a source electrode and a drain electrode, and a source electrode Or a conductive layer 113b functioning as the other of the drain electrodes.

  In FIG. 16A, an insulating layer 133 that covers the transistor 110, an insulating layer 134 that functions as a planarization layer, a conductive layer 121 that is electrically connected to the conductive layer 113b and functions as a pixel electrode, and conductive An insulating layer 135 covering the end of the layer 121 is shown.

  In the transistor 110, the conductive layer 111 functioning as a gate electrode is located on the formation surface side (insulating layer 131 side) of the semiconductor layer 112. An insulating layer 132 is provided to cover the conductive layer 111. The semiconductor layer 112 is provided so as to cover the conductive layer 111. A region of the semiconductor layer 112 that overlaps with the conductive layer 111 corresponds to a channel formation region. In addition, the conductive layer 113a and the conductive layer 113b are provided in contact with the upper surface and the side end portion of the semiconductor layer 112, respectively.

  Note that the transistor 110 illustrates an example in which the width of the semiconductor layer 112 is larger than that of the conductive layer 111. With such a structure, the semiconductor layer 112 is disposed between the conductive layer 111 and the conductive layer 113a or the conductive layer 113b, so that the parasitic capacitance between the conductive layer 111 and the conductive layer 113a or the conductive layer 113b is reduced. Can do.

  The transistor 110 is a channel-etched transistor and can be suitably used for a high-definition display device because it is relatively easy to reduce the area occupied by the transistor.

  A transistor 110 a illustrated in FIG. 16B is different from the transistor 110 in that the transistor 110 a includes a conductive layer 114 and an insulating layer 136. The conductive layer 114 is provided over the insulating layer 133 and has a region overlapping with the semiconductor layer 112. The insulating layer 136 is provided so as to cover the conductive layer 114 and the insulating layer 133.

  The conductive layer 114 is located on the side opposite to the conductive layer 111 with the semiconductor layer 112 interposed therebetween. In the case where the conductive layer 111 is a first gate electrode, the conductive layer 114 can function as a second gate electrode. By applying the same potential to the conductive layer 111 and the conductive layer 114, the on-state current of the transistor 110a can be increased. The threshold voltage of the transistor 110a can be controlled by applying a potential for controlling the threshold voltage to one of the conductive layers 111 and 114 and a potential for driving the other.

  Here, a conductive material containing an oxide is preferably used for the conductive layer 114. Thus, oxygen can be supplied to the insulating layer 133 by forming the conductive film that forms the conductive layer 114 in an atmosphere containing oxygen. Preferably, the proportion of oxygen gas in the film forming gas is in the range of 90% to 100%. Oxygen supplied to the insulating layer 133 is supplied to the semiconductor layer 112 by a subsequent heat treatment, so that oxygen vacancies in the semiconductor layer 112 can be reduced.

  In particular, the conductive layer 114 is preferably formed using a low-resistance oxide semiconductor. At this time, an insulating film that releases hydrogen, for example, a silicon nitride film or the like is preferably used for the insulating layer 136. Hydrogen is supplied into the conductive layer 114 during the formation of the insulating layer 136 or by heat treatment thereafter, so that the electrical resistance of the conductive layer 114 can be effectively reduced.

  A transistor 110b illustrated in FIG. 16C is a top-gate transistor.

  In the transistor 110b, the conductive layer 111 functioning as a gate electrode is provided above the semiconductor layer 112 (on the side opposite to the formation surface). In addition, the semiconductor layer 112 is formed over the insulating layer 131. Further, an insulating layer 132 and a conductive layer 111 are stacked over the semiconductor layer 112. The insulating layer 133 is provided so as to cover the upper surface and side edges of the semiconductor layer 112, the side surface of the insulating layer 133, and the conductive layer 111. The conductive layer 113 a and the conductive layer 113 b are provided over the insulating layer 133. The conductive layer 113a and the conductive layer 113b are electrically connected to the upper surface of the semiconductor layer 112 through an opening provided in the insulating layer 133.

  Note that although the example in which the insulating layer 132 does not exist in a portion that does not overlap with the conductive layer 111 is shown here, the insulating layer 132 may be provided so as to cover the upper surface and the side end portion of the semiconductor layer 112. .

  Since the transistor 110b can easily separate a physical distance between the conductive layer 111 and the conductive layer 113a or the conductive layer 113b, parasitic capacitance between the conductive layer 111 and the conductive layer 113a can be reduced.

  A transistor 110c illustrated in FIG. 16D is different from the transistor 110b in that the transistor 110c includes a conductive layer 115 and an insulating layer 137. The conductive layer 115 is provided over the insulating layer 131 and has a region overlapping with the semiconductor layer 112. The insulating layer 137 is provided so as to cover the conductive layer 115 and the insulating layer 131.

  The conductive layer 115 functions as a second gate electrode like the conductive layer 114. Therefore, it is possible to increase the on-current, control the threshold voltage, and the like.

  FIG. 16E illustrates a structure in which the transistor 110 and the transistor 110d are stacked. The transistor 110d is a transistor having a pair of gate electrodes.

  The transistor 110d includes a part of the conductive layer 113b functioning as the first gate electrode, a part of the insulating layer 133 functioning as the first gate insulating layer, the semiconductor layer 112a, and one of the source electrode and the drain electrode. A conductive layer 113c that functions, a conductive layer 113d that functions as the other of the source electrode and the drain electrode, a part of the insulating layer 136 that functions as the second gate insulating layer, and a conductive layer 114a that functions as the second gate electrode And having.

  Such a configuration can be preferably applied particularly to a circuit for driving a light emitting element. That is, the transistor 110 is used as a transistor (also referred to as a switching transistor or a selection transistor) that controls the selection / non-selection state of a pixel, and the transistor 110d is used as a transistor (also referred to as a drive transistor) that controls a current flowing through the light-emitting element 120. It is preferable to use it.

  In the structure illustrated in FIG. 16E, a conductive layer 114b formed by processing the same conductive film as the conductive layer 114a is electrically connected to the conductive layer 113c through an opening provided in the insulating layer 136. ing. In addition, the conductive layer 121 is electrically connected to the conductive layer 114 b through an opening provided in the insulating layer 134.

[About each component]
Below, each component shown above is demonstrated.

  As the substrate included in the display device, a material having a flat surface can be used. For the substrate from which light from the display element is extracted, a material that transmits the light is used. For example, materials such as glass, quartz, ceramic, sapphire, and organic resin can be used.

  By using a thin substrate, the display device can be reduced in weight and thickness. Furthermore, a flexible display device can be realized by using a flexible substrate.

  Further, since the substrate on the side from which light emission is not extracted does not have to be translucent, a metal substrate or the like can be used in addition to the above-described substrates. A metal substrate is preferable because it has high thermal conductivity and can easily conduct heat to the entire substrate, which can suppress a local temperature increase of the display device. In order to obtain flexibility and bendability, the thickness of the metal substrate is preferably 10 μm to 200 μm, and more preferably 20 μm to 50 μm.

  Although there is no limitation in particular as a material which comprises a metal substrate, For example, metals, such as aluminum, copper, nickel, or alloys, such as aluminum alloy or stainless steel, can be used suitably.

  Alternatively, a substrate that has been subjected to an insulating process by oxidizing the surface of the metal substrate or forming an insulating film on the surface may be used. For example, the insulating film may be formed by using a coating method such as a spin coating method or a dip method, an electrodeposition method, a vapor deposition method, or a sputtering method, or it is left in an oxygen atmosphere or heated, or an anodic oxidation method. For example, an oxide film may be formed on the surface of the substrate.

Examples of the material having flexibility and transparency to visible light include, for example, glass having a thickness having flexibility, polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), and polyacrylonitrile resin. , Polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyvinyl chloride resin, polytetrafluoroethylene (PTFE) resin Etc. In particular, a material having a low thermal expansion coefficient is preferably used. For example, a polyamideimide resin, a polyimide resin, PET, or the like having a thermal expansion coefficient of 30 × 10 ⁻⁶ / K or less can be suitably used. Further, a substrate in which glass fiber is impregnated with an organic resin, or a substrate in which an inorganic filler is mixed with an organic resin to reduce the thermal expansion coefficient can be used. Since a substrate using such a material is light, a display device using the substrate can be light.

  When a fibrous body is included in the material, a high-strength fiber of an organic compound or an inorganic compound is used for the fibrous body. The high-strength fiber specifically refers to a fiber having a high tensile modulus or Young's modulus, and representative examples include polyvinyl alcohol fiber, polyester fiber, polyamide fiber, polyethylene fiber, aramid fiber, Examples include polyparaphenylene benzobisoxazole fibers, glass fibers, and carbon fibers. Examples of the glass fiber include glass fibers using E glass, S glass, D glass, Q glass, and the like. These may be used in the form of a woven fabric or a non-woven fabric, and a structure obtained by impregnating the fiber body with a resin and curing the resin may be used as a flexible substrate. When a structure made of a fibrous body and a resin is used as the flexible substrate, it is preferable because reliability against breakage due to bending or local pressing is improved.

  Alternatively, glass, metal, or the like thin enough to have flexibility can be used for the substrate. Alternatively, a composite material in which glass and a resin material are bonded to each other with an adhesive layer may be used.

  A hard coat layer (for example, silicon nitride, aluminum oxide) that protects the surface of the display device from scratches, a layer of a material that can disperse the pressure (for example, aramid resin), etc. on a flexible substrate It may be laminated. In order to suppress a decrease in the lifetime of the display element due to moisture or the like, an insulating film with low water permeability may be stacked over a flexible substrate. For example, an inorganic insulating material such as silicon nitride, silicon oxynitride, silicon nitride oxide, aluminum oxide, or aluminum nitride can be used.

  The substrate can be used by stacking a plurality of layers. In particular, when the glass layer is used, the barrier property against water and oxygen can be improved, and a highly reliable display device can be obtained.

[Transistor]
The transistor includes a conductive layer that functions as a gate electrode, a semiconductor layer, a conductive layer that functions as a source electrode, a conductive layer that functions as a drain electrode, and an insulating layer that functions as a gate insulating layer. The above shows the case where a bottom-gate transistor is applied.

  Note that there is no particular limitation on the structure of the transistor included in the display device of one embodiment of the present invention. For example, a planar transistor, a staggered transistor, or an inverted staggered transistor may be used. Further, a top-gate or bottom-gate transistor structure may be employed. Alternatively, gate electrodes may be provided above and below the channel.

  There is no particular limitation on the crystallinity of a semiconductor material used for the transistor, and any of an amorphous semiconductor and a semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor partially including a crystal region) is used. May be used. It is preferable to use a crystalline semiconductor because deterioration of transistor characteristics can be suppressed.

  As a semiconductor material used for the transistor, for example, a Group 14 element (silicon, germanium, or the like), a compound semiconductor, or a metal oxide can be used for the semiconductor layer. Typically, a semiconductor containing silicon, a semiconductor containing gallium arsenide, a metal oxide containing indium, or the like can be used.

  In particular, it is preferable to use a metal oxide having a larger band gap than silicon. It is preferable to use a semiconductor material with a wider band gap and lower carrier density than silicon because current in an off state of the transistor can be reduced.

  In particular, the semiconductor layer has a plurality of crystal parts, and the crystal part has a c-axis oriented substantially perpendicular to the formation surface of the semiconductor layer or the top surface of the semiconductor layer, and there is no grain between adjacent crystal parts. It is preferable to use a metal oxide whose boundary cannot be confirmed.

  Since such a metal oxide does not have a crystal grain boundary, the occurrence of cracks in the metal oxide film due to stress when the display panel is curved is suppressed. Therefore, such a metal oxide can be suitably used for a display device that has flexibility and is bent.

  In addition, by using a metal oxide having such crystallinity as a semiconductor layer, a change in electrical characteristics is suppressed and a highly reliable transistor can be realized.

  In addition, a transistor using a metal oxide having a larger band gap than silicon can hold charge accumulated in a capacitor connected in series with the transistor for a long time due to its low off-state current. . By applying such a transistor to a pixel, the driving circuit can be stopped while maintaining the gradation of each pixel. As a result, a display device with extremely reduced power consumption can be realized.

  The semiconductor layer is represented by an In-M-Zn-based oxide containing at least indium, zinc, and M (metal such as aluminum, titanium, gallium, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium, or hafnium). It is preferable to include a film. In addition, in order to reduce variation in electric characteristics of the transistor using the metal oxide, it is preferable to include a stabilizer together with them.

  Examples of the stabilizer include the metals described in M above, and examples include gallium, tin, hafnium, aluminum, and zirconium. Other stabilizers include lanthanoids such as lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium.

  As a metal oxide forming the semiconductor layer, for example, an In—Ga—Zn-based oxide, an In—Al—Zn-based oxide, an In—Sn—Zn-based oxide, an In—Hf—Zn-based oxide, an In— La-Zn oxide, In-Ce-Zn oxide, In-Pr-Zn oxide, In-Nd-Zn oxide, In-Sm-Zn oxide, In-Eu-Zn oxide In-Gd-Zn-based oxide, In-Tb-Zn-based oxide, In-Dy-Zn-based oxide, In-Ho-Zn-based oxide, In-Er-Zn-based oxide, In-Tm -Zn oxide, In-Yb-Zn oxide, In-Lu-Zn oxide, In-Sn-Ga-Zn oxide, In-Hf-Ga-Zn oxide, In-Al- Ga-Zn oxide, In-Sn-Al-Zn oxide, In-Sn-Hf-Zn acid Things, can be used In-Hf-Al-Zn-based oxide.

  Note that here, an In—Ga—Zn-based oxide means an oxide containing In, Ga, and Zn as its main components, and there is no limitation on the ratio of In, Ga, and Zn. Moreover, metal elements other than In, Ga, and Zn may be contained.

  In addition, the semiconductor layer and the conductive layer may have the same metal element among the above oxides. Manufacturing costs can be reduced by using the same metal element for the semiconductor layer and the conductive layer. For example, the manufacturing cost can be reduced by using metal oxide targets having the same metal composition. Further, an etching gas or an etching solution for processing the semiconductor layer and the conductive layer can be used in common. However, the semiconductor layer and the conductive layer may have different compositions even if they have the same metal element. For example, a metal element in a film may be detached during a manufacturing process of a transistor and a capacitor to have a different metal composition.

  The metal oxide constituting the semiconductor layer preferably has an energy gap of 2 eV or more, preferably 2.5 eV or more, more preferably 3 eV or more. In this manner, off-state current of a transistor can be reduced by using a metal oxide having a wide energy gap.

  In the case where the metal oxide forming the semiconductor layer is an In-M-Zn oxide, the atomic ratio of the metal elements of the sputtering target used for forming the In-M-Zn oxide is In ≧ M, Zn ≧ It is preferable to satisfy M. As the atomic ratio of the metal elements of such a sputtering target, In: M: Zn = 1: 1: 1, In: M: Zn = 1: 1: 1.2, In: M: Zn = 3: 1: 2, 4: 2: 4.1 and the like are preferable. Note that the atomic ratio of the semiconductor layer to be formed includes a variation of plus or minus 40% of the atomic ratio of the metal element contained in the sputtering target as an error.

As the semiconductor layer, a metal oxide film with low carrier density is used. For example, the semiconductor layer has a carrier density of 1 × 10 ¹⁷ / cm ³ or less, preferably 1 × 10 ¹⁵ / cm ³ or less, more preferably 1 × 10 ¹³ / cm ³ or less, more preferably 1 × 10 ¹¹ / cm 3. ³ or less, more preferably less than 1 × 10 ¹⁰ / cm ³ , and a metal oxide of 1 × 10 ⁻⁹ / cm ³ or more can be used. Such metal oxides are referred to as high purity intrinsic or substantially high purity intrinsic metal oxides. Accordingly, it can be said that the metal oxide has stable characteristics because the impurity concentration is low and the density of defect states is low.

  Note that the composition is not limited thereto, and a transistor having an appropriate composition may be used depending on required semiconductor characteristics and electrical characteristics (field-effect mobility, threshold voltage, and the like) of the transistor. In addition, in order to obtain the required semiconductor characteristics of the transistor, it is preferable that the semiconductor layer have appropriate carrier density, impurity concentration, defect density, atomic ratio of metal element to oxygen, interatomic distance, density, and the like. .

If the metal oxide constituting the semiconductor layer contains silicon or carbon which is one of the Group 14 elements, oxygen vacancies increase in the semiconductor layer and become n-type. Therefore, the concentration of silicon or carbon in the semiconductor layer (concentration obtained by secondary ion mass spectrometry) is 2 × 10 ¹⁸ atoms / cm ³ or less, preferably 2 × 10 ¹⁷ atoms / cm ³ or less.

In addition, when an alkali metal and an alkaline earth metal are combined with a metal oxide, carriers may be generated, which may increase the off-state current of the transistor. Therefore, the concentration of alkali metal or alkaline earth metal obtained by secondary ion mass spectrometry in the semiconductor layer is set to 1 × 10 ¹⁸ atoms / cm ³ or less, preferably 2 × 10 ¹⁶ atoms / cm ³ or less.

In addition, when nitrogen is contained in the metal oxide constituting the semiconductor layer, electrons as carriers are generated, the carrier density is increased, and the n-type is easily obtained. As a result, a transistor using a metal oxide containing nitrogen is likely to be normally on. For this reason, it is preferable that the nitrogen concentration obtained by secondary ion mass spectrometry in the semiconductor layer is 5 × 10 ¹⁸ atoms / cm ³ or less.

  The semiconductor layer may have a non-single crystal structure, for example. The non-single-crystal structure is, for example, a CAAC-OS (C-Axis Crystalline Oxide Semiconductor Semiconductor, or C-Axis Aligned and A-B-Plane Annealed Crystalline Oxide Semiconductor Crystal Structure, Amorphous Crystal Structure, Includes structure. In the non-single-crystal structure, the amorphous structure has the highest density of defect states, and the CAAC-OS has the lowest density of defect states.

  An amorphous metal oxide film has, for example, disordered atomic arrangement and no crystal component. Alternatively, an amorphous oxide film has, for example, a completely amorphous structure and does not have a crystal part.

  Note that the semiconductor layer may be a mixed film including two or more of an amorphous structure region, a microcrystalline structure region, a polycrystalline structure region, a CAAC-OS region, and a single crystal structure region. Good. For example, the mixed film may have a single-layer structure or a stacked structure including any two or more of the above-described regions.

<Configuration of CAC-OS>
A structure of a CAC (Cloud Aligned Complementary) -OS that can be used for the transistor disclosed in one embodiment of the present invention is described below.

  The CAC-OS is one structure of a material in which elements forming a metal oxide are unevenly distributed with a size of 0.5 nm to 10 nm, preferably 1 nm to 2 nm, or the vicinity thereof. In the following, in the metal oxide, one or more metal elements are unevenly distributed, and the region having the metal element has a size of 0.5 nm to 10 nm, preferably 1 nm to 2 nm, or the vicinity thereof. The state mixed with is also referred to as a mosaic or patch.

  Note that the metal oxide preferably contains at least indium. In particular, it is preferable to contain indium and zinc. In addition, aluminum, gallium, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, etc. One kind selected from the above or a plurality of kinds may be included.

For example, a CAC-OS in In-Ga-Zn oxide (In-Ga-Zn oxide among CAC-OSs may be referred to as CAC-IGZO in particular) is an indium oxide (hereinafter referred to as InO). _X1 (X1 is greater real than 0) and.), or indium zinc oxide _{(hereinafter, in X2 Zn Y2 O Z2 (} X2, Y2, and Z2 is larger real than 0) and a.), gallium An oxide (hereinafter referred to as GaO _X3 (X3 is a real number greater than 0)) or a gallium zinc oxide (hereinafter referred to as Ga _X4 Zn _Y4 O _Z4 (where X4, Y4, and Z4 are greater than 0)) to.) and the like, the material becomes mosaic by separate into, mosaic _{InO X1} or _in X2 _Zn Y2 _{O Z2,} is a configuration in which uniformly distributed in the film (hereinafter Also referred to as a cloud-like.) A.

That, CAC-OS includes a region _{GaO X3} is the main _component, and In _{X2 Zn} Y2 _{O Z2,} or _{InO X1} is the main component region is a composite metal oxide having a structure that is mixed. Note that in this specification, for example, the first region indicates that the atomic ratio of In to the element M in the first region is larger than the atomic ratio of In to the element M in the second region. It is assumed that the concentration of In is higher than that in the second region.

Note that IGZO is a common name and may refer to one compound of In, Ga, Zn, and O. As a typical example, InGaO ₃ (ZnO) _m1 (m1 is a natural number) or In _{(1 + x0)} Ga _(1-x0) O ₃ (ZnO) _m0 (−1 ≦ x0 ≦ 1, m0 is an arbitrary number) A crystalline compound may be mentioned.

  The crystalline compound has a single crystal structure, a polycrystalline structure, or a CAAC structure. The CAAC structure is a crystal structure in which a plurality of IGZO nanocrystals have c-axis orientation and are connected without being oriented in the ab plane.

  On the other hand, CAC-OS relates to a material structure of a metal oxide. CAC-OS refers to a region observed in the form of nanoparticles mainly composed of Ga in a material structure including In, Ga, Zn and O, and nanoparticles mainly composed of In. The region observed in a shape is a configuration in which the regions are randomly dispersed in a mosaic shape. Therefore, in the CAC-OS, the crystal structure is a secondary element.

  Note that the CAC-OS does not include a stacked structure of two or more kinds of films having different compositions. For example, a structure composed of two layers of a film mainly containing In and a film mainly containing Ga is not included.

Incidentally, a region _{GaO X3} is the main _component, and In _{X2 Zn} Y2 _{O Z2} or _{InO X1} is the main component region, in some cases clear boundary can not be observed.

  In place of gallium, aluminum, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium are selected. In the case where one or a plurality of types are included, the CAC-OS includes a region that is observed in a part of a nanoparticle mainly including the metal element and a nanoparticle mainly including In. The region observed in the form of particles refers to a configuration in which each region is randomly dispersed in a mosaic shape.

  The CAC-OS can be formed by a sputtering method under a condition where the substrate is not intentionally heated, for example. In the case where a CAC-OS is formed by a sputtering method, any one or more selected from an inert gas (typically argon), an oxygen gas, and a nitrogen gas may be used as a deposition gas. Good. Further, the flow rate ratio of the oxygen gas to the total flow rate of the deposition gas during film formation is preferably as low as possible. .

  The CAC-OS is characterized in that no clear peak is observed when it is measured using a θ / 2θ scan by the out-of-plane method, which is one of the X-ray diffraction (XRD) measurement methods. Have. That is, it can be seen from X-ray diffraction that no orientation in the ab plane direction and c-axis direction of the measurement region is observed.

  In addition, in the CAC-OS, an electron diffraction pattern obtained by irradiating an electron beam with a probe diameter of 1 nm (also referred to as a nanobeam electron beam) has a ring-like region having a high luminance and a plurality of bright regions in the ring region. A point is observed. Therefore, it can be seen from the electron beam diffraction pattern that the crystal structure of the CAC-OS has an nc (nano-crystal) structure having no orientation in the planar direction and the cross-sectional direction.

Further, for example, in a CAC-OS in an In—Ga—Zn oxide, a region in which GaO _X3 is a main component is obtained by EDX mapping obtained by using energy dispersive X-ray spectroscopy (EDX). It can be confirmed that a region in which In _X2 Zn _Y2 O _Z2 or InO _X1 is a main component is unevenly distributed and mixed.

The CAC-OS has a structure different from that of the IGZO compound in which the metal element is uniformly distributed, and has a property different from that of the IGZO compound. That is, in the CAC-OS, a region in which GaO _X3 or the like is a main component and a region in which In _X2 Zn _Y2 O _Z2 or InO _X1 is a main component are phase-separated from each other, and each region is mainly composed of each element. Has a mosaic structure.

Here, the region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as a main component is a region having higher conductivity than a region containing GaO _X3 or the like as a main component. _That, In _{X2 Zn} Y2 _{O Z2} or _{InO X1,} is an area which is the main component, by carriers flow, conductive metal oxide is expressed. Accordingly, a region where In _X2 Zn _Y2 O _Z2 or InO _X1 is a main component is distributed in a cloud shape in the metal oxide, so that high field-effect mobility (μ) can be realized.

On the other hand, areas such as _{GaO X3} is the main _component, as compared to the In _{X2 Zn} Y2 _{O Z2} or _{InO X1} is the main component area, it is highly regions insulating. That is, since the region mainly composed of GaO _X3 or the like is distributed in the metal oxide, a leakage current can be suppressed and a good switching operation can be realized.

Therefore, when CAC-OS is used for a semiconductor element, the insulating property caused by GaO _{X3 and the} like and the conductivity caused by In _X2 Zn _Y2 O _Z2 or InO _X1 act in a complementary manner, resulting in high An on-current (I _on ) and high field effect mobility (μ) can be realized.

  In addition, a semiconductor element using a CAC-OS has high reliability. Therefore, the CAC-OS is optimal for various semiconductor devices including a display.

  Alternatively, silicon is preferably used for a semiconductor in which a channel of the transistor is formed. Although amorphous silicon may be used as silicon, it is particularly preferable to use silicon having crystallinity. For example, microcrystalline silicon, polycrystalline silicon, single crystal silicon, or the like is preferably used. In particular, polycrystalline silicon can be formed at a lower temperature than single crystal silicon, and has higher field effect mobility and higher reliability than amorphous silicon. By applying such a polycrystalline semiconductor to a pixel, the aperture ratio of the pixel can be improved. Even in the case of a display portion with extremely high definition, the gate driver circuit and the source driver circuit can be formed over the same substrate as the pixel, and the number of components included in the electronic device can be reduced.

  The bottom-gate transistor described in this embodiment is preferable because the number of manufacturing steps can be reduced. At this time, since amorphous silicon can be used at a lower temperature than polycrystalline silicon, it is possible to use a material having low heat resistance as a material for wiring, electrodes, and substrates below the semiconductor layer. Can widen the choice of materials. For example, a glass substrate having an extremely large area can be suitably used. On the other hand, a top-gate transistor is preferable because an impurity region can be easily formed in a self-aligning manner and variation in characteristics can be reduced. At this time, it is particularly suitable when polycrystalline silicon, single crystal silicon or the like is used.

[Conductive layer]
In addition to the gate, source, and drain of a transistor, materials that can be used for conductive layers such as various wirings and electrodes that constitute a display device include aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, A metal such as tantalum or tungsten, or an alloy containing the same as a main component can be given. A film containing any of these materials can be used as a single layer or a stacked structure. For example, a single layer structure of an aluminum film containing silicon, a two layer structure in which an aluminum film is stacked on a titanium film, a two layer structure in which an aluminum film is stacked on a tungsten film, and a copper film on a copper-magnesium-aluminum alloy film Two-layer structure to stack, two-layer structure to stack copper film on titanium film, two-layer structure to stack copper film on tungsten film, titanium film or titanium nitride film, and aluminum film or copper film on top of it A three-layer structure for forming a titanium film or a titanium nitride film thereon, a molybdenum film or a molybdenum nitride film, and an aluminum film or a copper film stacked thereon, and a molybdenum film or a There is a three-layer structure for forming a molybdenum nitride film. Note that an oxide such as indium oxide, tin oxide, or zinc oxide may be used. Further, it is preferable to use copper containing manganese because the controllability of the shape by etching is increased.

  As the light-transmitting conductive material, conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, or zinc oxide to which gallium is added, or graphene can be used. Alternatively, a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium, or an alloy material containing the metal material can be used. Alternatively, a nitride (eg, titanium nitride) of the metal material may be used. Note that in the case where a metal material or an alloy material (or a nitride thereof) is used, it may be thin enough to have a light-transmitting property. In addition, a stacked film of the above materials can be used as a conductive layer. For example, it is preferable to use a laminated film of an alloy of silver and magnesium and indium tin oxide because the conductivity can be increased. These can also be used for conductive layers such as various wirings and electrodes constituting the display device and conductive layers (conductive layers functioning as pixel electrodes and common electrodes) included in the display element.

[Insulation layer]
Insulating materials that can be used for each insulating layer include, for example, resins such as acrylic and epoxy, resins having a siloxane bond, and inorganic insulation such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide. Materials can also be used.

  The light-emitting element is preferably provided between a pair of insulating films with low water permeability. Thereby, impurities such as water can be prevented from entering the light emitting element, and a decrease in reliability of the apparatus can be suppressed.

  Examples of the low water-permeable insulating film include a film containing nitrogen and silicon such as a silicon nitride film and a silicon nitride oxide film, and a film containing nitrogen and aluminum such as an aluminum nitride film. Alternatively, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or the like may be used.

For example, the water vapor transmission rate of an insulating film with low water permeability is 1 × 10 ⁻⁵ [g / (m ² · day)] or less, preferably 1 × 10 ⁻⁶ [g / (m ² · day)] or less, More preferably, it is 1 × 10 ⁻⁷ [g / (m ² · day)] or less, and further preferably 1 × 10 ⁻⁸ [g / (m ² · day)] or less.

[Liquid crystal element]
As the liquid crystal element, for example, a liquid crystal element to which a vertical alignment (VA: Vertical Alignment) mode is applied can be used. As the vertical alignment mode, an MVA (Multi-Domain Vertical Alignment) mode, a PVA (Patterned Vertical Alignment) mode, an ASV (Advanced Super View) mode, or the like can be used.

  As the liquid crystal element, liquid crystal elements to which various modes are applied can be used. For example, in addition to the VA mode, a TN (Twisted Nematic) mode, an IPS (In-Plane-Switching) mode, an FFS (Fringe Field Switching) mode, an ASM (Axially Symmetrical Aligned Micro-cell) mode, Further, a liquid crystal element to which an FLC (Ferroelectric Liquid Crystal) mode, an AFLC (Antiferroelectric Liquid Crystal) mode, or the like is applied can be used.

  Note that a liquid crystal element is an element that controls transmission or non-transmission of light by an optical modulation action of liquid crystal. Note that the optical modulation action of the liquid crystal is controlled by an electric field applied to the liquid crystal (including a horizontal electric field, a vertical electric field, or an oblique electric field). As the liquid crystal used in the liquid crystal element, a thermotropic liquid crystal, a low molecular liquid crystal, a polymer liquid crystal, a polymer dispersed liquid crystal (PDLC), a ferroelectric liquid crystal, an antiferroelectric liquid crystal, or the like is used. Can do. These liquid crystal materials exhibit a cholesteric phase, a smectic phase, a cubic phase, a chiral nematic phase, an isotropic phase, and the like depending on conditions.

  Further, as the liquid crystal material, either a positive type liquid crystal or a negative type liquid crystal may be used, and an optimal liquid crystal material may be used according to an applied mode or design.

  An alignment film can be provided to control the alignment of the liquid crystal. Note that in the case of employing a horizontal electric field mode, liquid crystal exhibiting a blue phase for which an alignment film is unnecessary may be used. The blue phase is one of the liquid crystal phases. When the temperature of the cholesteric liquid crystal is increased, the blue phase appears immediately before the transition from the cholesteric phase to the isotropic phase. Since the blue phase appears only in a narrow temperature range, a liquid crystal composition mixed with several percent by weight or more of a chiral agent is used for the liquid crystal layer in order to improve the temperature range. A liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent has a short response speed and is optically isotropic. In addition, a liquid crystal composition including a liquid crystal exhibiting a blue phase and a chiral agent does not require alignment treatment and has a small viewing angle dependency. Further, since it is not necessary to provide an alignment film, a rubbing process is not required, so that electrostatic breakdown caused by the rubbing process can be prevented, and defects or breakage of the liquid crystal display device during the manufacturing process can be reduced. .

  As the liquid crystal element, a transmissive liquid crystal element, a reflective liquid crystal element, a transflective liquid crystal element, or the like can be used.

  In one embodiment of the present invention, a reflective liquid crystal element can be used.

  In the case of using a transmissive or transflective liquid crystal element, two polarizing plates are provided so as to sandwich a pair of substrates. A backlight is provided outside the polarizing plate. The backlight may be a direct type backlight or an edge light type backlight. It is preferable to use a direct-type backlight including an LED (Light Emitting Diode) because local dimming is facilitated and contrast can be increased. An edge light type backlight is preferably used because the thickness of the module including the backlight can be reduced.

  In the case of using a reflective liquid crystal element, a polarizing plate is provided on the display surface side. Separately from this, it is preferable to arrange a light diffusing plate on the display surface side because the visibility can be improved.

[Light emitting element]
As the light-emitting element, an element capable of self-emission can be used, and an element whose luminance is controlled by current or voltage is included in its category. For example, a light emitting diode (LED), an organic EL element, an inorganic EL element, or the like can be used.

  Light emitting elements include a top emission type, a bottom emission type, and a dual emission type. A conductive film that transmits visible light is used for the electrode from which light is extracted. In addition, a conductive film that reflects visible light is preferably used for the electrode from which light is not extracted.

  In one embodiment of the present invention, a bottom emission light-emitting element can be used.

  The EL layer has at least a light emitting layer. The EL layer is a layer other than the light-emitting layer, such as a substance having a high hole injection property, a substance having a high hole transport property, a hole blocking material, a substance having a high electron transport property, a substance having a high electron injection property, or a bipolar property. A layer including a substance (a substance having a high electron transporting property and a high hole transporting property) and the like may be further included.

  Either a low molecular compound or a high molecular compound can be used for the EL layer, and an inorganic compound may be included. The layers constituting the EL layer can be formed by a method such as a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an ink jet method, or a coating method.

  When a voltage higher than the threshold voltage of the light emitting element is applied between the cathode and the anode, holes are injected into the EL layer from the anode side and electrons are injected from the cathode side. The injected electrons and holes are recombined in the EL layer, and the light-emitting substance contained in the EL layer emits light.

  In the case where a white light-emitting element is used as the light-emitting element, the EL layer preferably includes two or more light-emitting substances. For example, white light emission can be obtained by selecting the light emitting material so that the light emission of each of the two or more light emitting materials has a complementary color relationship. For example, a light emitting material that emits light such as R (red), G (green), B (blue), Y (yellow), and O (orange), or spectral components of two or more colors of R, G, and B It is preferable that 2 or more are included among the luminescent substances which show light emission containing. In addition, it is preferable to apply a light-emitting element whose emission spectrum from the light-emitting element has two or more peaks within a wavelength range of visible light (for example, 350 nm to 750 nm). The emission spectrum of the material having a peak in the yellow wavelength region is preferably a material having spectral components in the green and red wavelength regions.

  The EL layer preferably has a structure in which a light-emitting layer including a light-emitting material that emits one color and a light-emitting layer including a light-emitting material that emits another color are stacked. For example, the plurality of light emitting layers in the EL layer may be stacked in contact with each other, or may be stacked through a region not including any light emitting material. For example, a region including the same material (for example, a host material or an assist material) as the fluorescent light emitting layer or the phosphorescent light emitting layer and not including any light emitting material is provided between the fluorescent light emitting layer and the phosphorescent light emitting layer. Also good. This facilitates the production of the light emitting element and reduces the driving voltage.

  The light-emitting element may be a single element having one EL layer or a tandem element in which a plurality of EL layers are stacked with a charge generation layer interposed therebetween.

  The conductive film that transmits visible light can be formed using, for example, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide to which gallium is added, or the like. In addition, a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium, an alloy including these metal materials, or a nitride of these metal materials (for example, Titanium nitride) can also be used by forming it thin enough to have translucency. In addition, a stacked film of the above materials can be used as a conductive layer. For example, it is preferable to use a stacked film of an alloy of silver and magnesium and indium tin oxide because the conductivity can be increased. Further, graphene or the like may be used.

  For the conductive film that reflects visible light, for example, a metal material such as aluminum, gold, platinum, silver, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium, or an alloy including these metal materials is used. Can do. In addition, lanthanum, neodymium, germanium, or the like may be added to the metal material or alloy. Alternatively, titanium, nickel, or neodymium and an alloy containing aluminum (aluminum alloy) may be used. Alternatively, an alloy containing copper, palladium, magnesium, and silver may be used. An alloy containing silver and copper is preferable because of its high heat resistance. Furthermore, oxidation can be suppressed by stacking a metal film or a metal oxide film in contact with the aluminum film or the aluminum alloy film. Examples of materials for such metal films and metal oxide films include titanium and titanium oxide. Alternatively, the conductive film that transmits visible light and a film made of a metal material may be stacked. For example, a laminated film of silver and indium tin oxide, a laminated film of an alloy of silver and magnesium and indium tin oxide, or the like can be used.

  The electrodes may be formed using a vapor deposition method or a sputtering method, respectively. In addition, it can be formed using a discharge method such as an inkjet method, a printing method such as a screen printing method, or a plating method.

  Note that the above-described light-emitting layer and a layer containing a substance having a high hole-injecting property, a substance having a high hole-transporting property, a substance having a high electron-transporting property, a substance having a high electron-injecting property, a bipolar substance, Each may have an inorganic compound such as a quantum dot or a polymer compound (oligomer, dendrimer, polymer, etc.). For example, a quantum dot can be used for a light emitting layer to function as a light emitting material.

  As the quantum dot material, a colloidal quantum dot material, an alloy type quantum dot material, a core / shell type quantum dot material, a core type quantum dot material, or the like can be used. Alternatively, a material including an element group of Group 12 and Group 16, Group 13 and Group 15, or Group 14 and Group 16 may be used. Alternatively, a quantum dot material containing an element such as cadmium, selenium, zinc, sulfur, phosphorus, indium, tellurium, lead, gallium, arsenic, or aluminum may be used.

(Adhesive layer)
As the adhesive layer, various curable adhesives such as an ultraviolet curable photocurable adhesive, a reactive curable adhesive, a thermosetting adhesive, and an anaerobic adhesive can be used. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenol resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, EVA (ethylene vinyl acetate) resins, and the like. In particular, a material with low moisture permeability such as an epoxy resin is preferable. Alternatively, a two-component mixed resin may be used. Further, an adhesive sheet or the like may be used.

  Further, the resin may contain a desiccant. For example, a substance that adsorbs moisture by chemical adsorption, such as an alkaline earth metal oxide (such as calcium oxide or barium oxide), can be used. Alternatively, a substance that adsorbs moisture by physical adsorption, such as zeolite or silica gel, may be used. The inclusion of a desiccant is preferable because impurities such as moisture can be prevented from entering the element and the reliability of the display panel is improved.

  In addition, light extraction efficiency can be improved by mixing a filler having a high refractive index or a light scattering member with the resin. For example, titanium oxide, barium oxide, zeolite, zirconium, or the like can be used.

(Connection layer)
As the connection layer, an anisotropic conductive film (ACF: Anisotropic Conductive Film), an anisotropic conductive paste (ACP: Anisotropic Conductive Paste), or the like can be used.

(Colored layer)
Examples of materials that can be used for the colored layer include metal materials, resin materials, resin materials containing pigments or dyes, and the like.

[Light shielding layer]
Examples of the material that can be used for the light-shielding layer include carbon black, titanium black, metal, metal oxide, and composite oxide containing a solid solution of a plurality of metal oxides. The light shielding layer may be a film containing a resin material or a thin film of an inorganic material such as a metal. Alternatively, a stacked film of a film containing a material for the colored layer can be used for the light shielding layer. For example, a stacked structure of a film including a material used for a colored layer that transmits light of a certain color and a film including a material used for a colored layer that transmits light of another color can be used. It is preferable to use a common material for the coloring layer and the light-shielding layer because the apparatus can be shared and the process can be simplified.

  The above is the description of each component.

  This embodiment can be implemented in appropriate combination with at least part of the other embodiments described in this specification.

(Embodiment 2)
In this embodiment, as an example of a display device of one embodiment of the present invention, both a reflective liquid crystal element and a light-emitting element are provided, and a light-emitting mode, a reflective mode, and a hybrid mode display in which these are performed simultaneously are performed. An example of a display device (display panel) that can be used will be described. Such a display panel can also be called ER-Hybrid Display (Emission and Reflection Hybrid Display or Emission / Reflection Hybrid Display).

  The display device of one embodiment of the present invention is a display device in which a first display element that reflects visible light and a second display element that emits visible light are mixed.

  The display device has a function of displaying an image with one or both of first light reflected by the first display element and second light emitted by the second display element. Alternatively, the display device functions to express gradation by controlling the amount of first light reflected by the first display element and the amount of second light emitted by the second display element, respectively. Have

  In addition, the display device controls the first pixel that expresses gradation by controlling the amount of reflected light from the first display element, and the gradation by controlling the amount of light emitted from the second display element. A structure including the second pixel to be expressed is preferable. A plurality of first pixels and second pixels are arranged in a matrix, for example, and constitute a display unit.

  The first pixel and the second pixel are preferably arranged in the display area at the same pitch. At this time, the adjacent first pixel and second pixel can be collectively referred to as a pixel unit.

  Furthermore, it is preferable that the first pixel and the second pixel are arranged in a mixed manner in the display region of the display device. Thereby, as will be described later, both the image displayed only with the plurality of first pixels, the image displayed only with the plurality of second pixels, and the plurality of first pixels and the plurality of second pixels. Each of the images displayed in can be displayed in the same display area.

  As the first display element included in the first pixel, an element that reflects external light for display can be used. Since such an element does not have a light source, power consumption during display can be extremely reduced.

  As the first display element, a reflective liquid crystal element can be typically used. Alternatively, as the first display element, in addition to a shutter-type MEMS (Micro Electro Mechanical Systems) element, an optical interference-type MEMS element, a microcapsule method, an electrophoresis method, an electrowetting method, an electronic powder fluid (registered trademark) An element to which a method or the like is applied can be used.

  In addition, the second display element included in the second pixel includes a light source, and an element that performs display using light from the light source can be used. In particular, an electroluminescent element that can extract light emitted from a light-emitting substance by applying an electric field is preferably used. The light emitted from such a pixel is not affected by the brightness or chromaticity of the light, and therefore has high color reproducibility (wide color gamut) and high contrast, that is, vivid display. be able to.

  As the second display element, for example, a self-luminous light emitting element such as an OLED (Organic Light Emitting Diode), an LED (Light Emitting Diode), a QLED (Quantum-Dot Light Emitting Diode), or a semiconductor laser can be used. Alternatively, as the display element included in the second pixel, a combination of a backlight that is a light source and a transmissive liquid crystal element that controls the amount of light transmitted through the backlight may be used.

  The first pixel can include a sub-pixel that exhibits, for example, white (W), or a sub-pixel that exhibits three colors of light, for example, red (R), green (G), and blue (B). . Similarly, the second pixel has a sub-pixel that exhibits, for example, white (W), or a sub-pixel that exhibits light of three colors, for example, red (R), green (G), and blue (B). can do. Note that the subpixels included in each of the first pixel and the second pixel may have four or more colors. As the number of subpixels increases, power consumption can be reduced and color reproducibility can be improved.

  As an example of such a display panel, there is a configuration in which a liquid crystal element including an electrode that reflects visible light and a light emitting element are stacked. At this time, it is preferable that the electrode that reflects visible light has an opening, and the opening and the light-emitting element are overlaid. Thereby, in the light emission mode, it can drive so that the light from a light emitting element may be inject | emitted through the said opening. In addition, in a plan view, the size of a pixel including both the liquid crystal element and the light emitting element can be reduced by stacking and arranging the liquid crystal element and the light emitting element side by side. A higher definition display device can be realized.

  Furthermore, it is preferable that the transistor for driving the liquid crystal element and the transistor for forming the light emitting element are individually provided. Thereby, a liquid crystal element and a light emitting element can be driven independently, respectively.

  Here, a transistor in which an oxide semiconductor is used and an off-state current is extremely low is preferably used for a pixel circuit that drives a liquid crystal element. Alternatively, a memory element may be applied to the pixel circuit. This makes it possible to maintain gradation even when the writing operation to the pixel is stopped when a still image is displayed using the liquid crystal element. That is, display can be maintained even if the frame rate is extremely small. Thereby, a display with extremely low power consumption can be performed.

  One embodiment of the present invention is a first mode in which an image is displayed with a reflective element, a second mode in which an image is displayed with a light emitting element, and a third mode in which an image is displayed with a reflective element and the light emitting element. Can be switched. In particular, the third mode can also be called a hybrid mode.

  The first mode is a mode for displaying an image using reflected light from a reflective element. The first mode is a driving mode with extremely low power consumption because no light source is required. For example, it is effective when the illuminance of outside light is sufficiently high and the outside light is white light or light in the vicinity thereof. The first mode is a display mode suitable for displaying character information such as books and documents. In addition, since the reflected light is used, it is possible to perform display that is kind to the eyes, and the effect that the eyes are less tired is achieved.

  The second mode is a mode in which an image is displayed using light emitted from the light emitting element. Therefore, an extremely vivid display (high contrast and high color reproducibility) can be performed regardless of the illuminance and chromaticity of external light. For example, it is effective when the illuminance of outside light is extremely small, such as at night or in a dark room. Further, when the outside light is dark, the user may feel dazzled when performing bright display. In order to prevent this, it is preferable to perform display with reduced luminance in the second mode. Thereby, in addition to suppressing glare, power consumption can also be reduced. The second mode is a mode suitable for displaying a vivid image or a smooth moving image.

  The third mode is a mode in which display is performed using both reflected light from a reflective element and light emitted from a light emitting element. Specifically, driving is performed so as to express one color by mixing light emitted by the reflective element and light emitted by the light emitting element. While displaying more vividly than in the first mode, it is possible to suppress power consumption as compared with the second mode. For example, it is effective when the illuminance of outside light is relatively low, such as under room lighting or in the morning or evening hours, or when the chromaticity of outside light is not white. Further, by using light in which reflected light and light emission are mixed, it is possible to display an image that makes it feel as if the user is looking at a painting.

[Configuration example]
FIG. 17A is a block diagram illustrating an example of a structure of the display device 400. The display device 400 includes a plurality of pixels 410 arranged in a matrix on the display portion 362. The display device 400 includes a circuit GD and a circuit SD. In addition, a plurality of pixels 410 arranged in the direction R, a plurality of wirings G1, a plurality of wirings G2, a plurality of wirings ANO, and a plurality of wirings CSCOM electrically connected to the circuit GD are provided. In addition, a plurality of pixels 410 arranged in the direction C, and a plurality of wirings S1 and a plurality of wirings S2 electrically connected to the circuit SD are provided.

  Note that, here, for the sake of simplicity, a configuration including one circuit GD and one circuit SD is shown; however, the circuit GD and the circuit SD that drive the liquid crystal element and the circuit GD and the circuit SD that drive the light emitting element are separately provided. May be provided.

  The pixel 410 includes a reflective liquid crystal element and a light-emitting element. In the pixel 410, the liquid crystal element and the light-emitting element have portions that overlap each other.

  FIG. 17B1 illustrates a configuration example of the conductive layer 311b included in the pixel 410. The conductive layer 311b functions as a reflective electrode of the liquid crystal element in the pixel 410. In addition, an opening 451 is provided in the conductive layer 311b.

  In FIG. 17B1, the light-emitting element 360 located in a region overlapping with the conductive layer 311b is indicated by a broken line. The light-emitting element 360 is disposed so as to overlap with the opening 451 included in the conductive layer 311b. Thereby, the light emitted from the light emitting element 360 is emitted to the display surface side through the opening 451.

  In FIG. 17B1, the pixels 410 adjacent in the direction R are pixels corresponding to different colors. At this time, as illustrated in FIG. 17B1, in the plurality of pixels arranged in the direction R, the openings 451 are preferably provided at different positions in the conductive layer 311b so as not to be arranged in a straight line. Accordingly, the two adjacent light emitting elements 360 can be separated, and a phenomenon (also referred to as crosstalk) in which light emitted from the light emitting element 360 enters the colored layer of the adjacent pixel 410 can be suppressed. . In addition, since the two adjacent light emitting elements 360 can be arranged apart from each other, a display device with high definition can be realized even when the EL layer of the light emitting element 360 is separately formed using a shadow mask or the like.

  Alternatively, an arrangement as shown in FIG.

  If the ratio of the total area of the openings 451 to the total area of the non-openings is too large, the display using the liquid crystal element becomes dark. If the ratio of the total area of the openings 451 to the total area of the non-openings is too small, the display using the light emitting element 360 is darkened.

  In addition, when the area of the opening 451 provided in the conductive layer 311b functioning as the reflective electrode is too small, the efficiency of light that can be extracted from the light emitted from the light-emitting element 360 is reduced.

  The shape of the opening 451 can be, for example, a polygon, a rectangle, an ellipse, a circle, a cross, or the like. Moreover, it is good also as an elongated streak shape, a slit shape, and a checkered shape. Further, the opening 451 may be arranged close to adjacent pixels. Preferably, the opening 451 is arranged close to other pixels displaying the same color. Thereby, crosstalk can be suppressed.

[Circuit configuration example]
FIG. 18 is a circuit diagram illustrating a configuration example of the pixel 410. In FIG. 18, two adjacent pixels 410 are shown.

  The pixel 410 includes a switch SW1, a capacitor C1, a liquid crystal element 340, a switch SW2, a transistor M, a capacitor C2, a light emitting element 360, and the like. In addition, a wiring G1, a wiring G2, a wiring ANO, a wiring CSCOM, a wiring S1, and a wiring S2 are electrically connected to the pixel 410. In FIG. 18, a wiring VCOM1 electrically connected to the liquid crystal element 340 and a wiring VCOM2 electrically connected to the light emitting element 360 are illustrated.

  FIG. 18 shows an example in which transistors are used for the switch SW1 and the switch SW2.

  The switch SW1 has a gate connected to the wiring G1, a source or drain connected to the wiring S1, and the other source or drain connected to one electrode of the capacitor C1 and one electrode of the liquid crystal element 340. Yes. The other electrode of the capacitor C1 is connected to the wiring CSCOM. The other electrode of the liquid crystal element 340 is connected to the wiring VCOM1.

  The switch SW2 has a gate connected to the wiring G2, one of a source and a drain connected to the wiring S2, and the other of the source and the drain connected to one electrode of the capacitor C2 and the gate of the transistor M. The other electrode of the capacitor C2 is connected to one of the source and the drain of the transistor M and the wiring ANO. In the transistor M, the other of the source and the drain is connected to one electrode of the light emitting element 360. The other electrode of the light emitting element 360 is connected to the wiring VCOM2.

  FIG. 18 shows an example in which the transistor M has two gates sandwiching a semiconductor and these are connected. As a result, the current that can be passed by the transistor M can be increased.

  A signal for controlling the switch SW1 to be in a conductive state or a non-conductive state can be supplied to the wiring G1. A predetermined potential can be applied to the wiring VCOM1. A signal for controlling the alignment state of the liquid crystal included in the liquid crystal element 340 can be supplied to the wiring S1. A predetermined potential can be applied to the wiring CSCOM.

  A signal for controlling the switch SW2 to be in a conductive state or a non-conductive state can be supplied to the wiring G2. The wiring VCOM2 and the wiring ANO can each be supplied with a potential at which a potential difference generated by the light emitting element 360 emits light. A signal for controlling the conduction state of the transistor M can be supplied to the wiring S2.

  For example, when performing display in a reflection mode, the pixel 410 illustrated in FIG. 18 can be driven by a signal supplied to the wiring G1 and the wiring S1 and can display using optical modulation by the liquid crystal element 340. Further, in the case of performing display in the light emission mode, display can be performed by driving the light emitting element 360 to emit light by driving with a signal applied to the wiring G2 and the wiring S2. In the case of driving in both modes, the driving can be performed by signals given to the wiring G1, the wiring G2, the wiring S1, and the wiring S2.

  Note that although FIG. 18 illustrates an example in which one pixel 410 includes one liquid crystal element 340 and one light emitting element 360, the present invention is not limited thereto. FIG. 19A illustrates an example in which one pixel 410 includes one liquid crystal element 340 and four light-emitting elements 360 (light-emitting elements 360r, 360g, 360b, and 360w). A pixel 410 illustrated in FIG. 19A is different from that illustrated in FIG. 18 and is a pixel capable of full color display with one pixel.

  In FIG. 19A, in addition to the example of FIG. 18, a wiring G3 and a wiring S3 are connected to the pixel 410.

  In the example illustrated in FIG. 19A, for example, light emitting elements that exhibit red (R), green (G), blue (B), and white (W) can be used as the four light emitting elements 360, respectively. As the liquid crystal element 340, a reflective liquid crystal element exhibiting white can be used. Thereby, when displaying in reflection mode, white display with high reflectance can be performed. In addition, when display is performed in the light emission mode, display with high color rendering properties can be performed with low power.

  FIG. 19B illustrates a configuration example of the pixel 410. The pixel 410 includes a light-emitting element 360 w that overlaps with an opening of the conductive layer 311, and a light-emitting element 360 r, a light-emitting element 360 g, and a light-emitting element 360 b that are arranged around the conductive layer 311. The light emitting element 360r, the light emitting element 360g, and the light emitting element 360b preferably have substantially the same light emitting area.

  This embodiment can be implemented in appropriate combination with at least part of the other embodiments described in this specification.

(Embodiment 3)
In this embodiment, a display module that can be manufactured using one embodiment of the present invention will be described.

  A display module 6000 illustrated in FIG. 20A includes a display panel 6006 connected to an FPC 6005, a frame 6009, a printed board 6010, and a battery 6011 between an upper cover 6001 and a lower cover 6002.

  For example, a display device manufactured using one embodiment of the present invention can be used for the display panel 6006. Thereby, a display module can be manufactured with a high yield.

  The shapes and dimensions of the upper cover 6001 and the lower cover 6002 can be changed as appropriate in accordance with the size of the display panel 6006.

  Further, a touch panel may be provided over the display panel 6006. As the touch panel, a resistive film type or capacitive type touch panel can be used by being superimposed on the display panel 6006. Further, without providing a touch panel, the display panel 6006 can have a touch panel function.

  The frame 6009 has a function as an electromagnetic shield for blocking electromagnetic waves generated by the operation of the printed board 6010 in addition to a protective function of the display panel 6006. The frame 6009 may function as a heat sink.

  The printed board 6010 includes a power supply circuit, a signal processing circuit for outputting a video signal and a clock signal. The power source for supplying power to the power supply circuit may be an external commercial power source or a power source by a battery 6011 provided separately. The battery 6011 can be omitted when a commercial power source is used.

  The display module 6000 may be additionally provided with a member such as a polarizing plate, a retardation plate, or a prism sheet.

  FIG. 20B is a schematic cross-sectional view of a display module 6000 including an optical touch sensor.

  The display module 6000 includes a light emitting unit 6015 and a light receiving unit 6016 provided on the printed board 6010. Further, a region surrounded by the upper cover 6001 and the lower cover 6002 has a pair of light guide portions (light guide portion 6017a and light guide portion 6017b).

  The display panel 6006 is provided to overlap the printed circuit board 6010 and the battery 6011 with a frame 6009 interposed therebetween. The display panel 6006 and the frame 6009 are fixed to the light guide unit 6017a and the light guide unit 6017b.

  Light 6018 emitted from the light emitting unit 6015 passes through the upper part of the display panel 6006 by the light guide unit 6017a and reaches the light receiving unit 6016 through the light guide unit 6017b. For example, the touch operation can be detected by blocking the light 6018 by a detection target such as a finger or a stylus.

  For example, a plurality of light emitting units 6015 are provided along two adjacent sides of the display panel 6006. A plurality of light receiving portions 6016 are provided at positions facing the light emitting portion 6015 with the display panel 6006 interposed therebetween. Thereby, the information on the position where the touch operation is performed can be acquired.

  For the light emitting unit 6015, for example, a light source such as an LED element can be used. In particular, it is preferable to use a light source that emits infrared rays that are not visually recognized by the user and harmless to the user as the light emitting unit 6015.

  The light receiving unit 6016 can be a photoelectric element that receives light emitted from the light emitting unit 6015 and converts the light into an electrical signal. Preferably, a photodiode capable of receiving infrared light can be used.

  As the light guide portion 6017a and the light guide portion 6017b, a member that transmits at least the light 6018 can be used. By using the light guide unit 6017a and the light guide unit 6017b, the light emitting unit 6015 and the light receiving unit 6016 can be arranged below the display panel 6006, and external light reaches the light receiving unit 6016 and the touch sensor malfunctions. Can be suppressed. In particular, it is preferable to use a resin that absorbs visible light and transmits infrared rays. Thereby, malfunction of a touch sensor can be controlled more effectively.

  This embodiment can be implemented in appropriate combination with at least part of the other embodiments described in this specification.

(Embodiment 4)
In this embodiment, electronic devices to which the display device of one embodiment of the present invention can be applied will be described.

  The display device of one embodiment of the present invention can achieve high visibility regardless of the intensity of external light. Therefore, it can be suitably used for a portable electronic device, a wearable electronic device (wearable device), an electronic book terminal, and the like.

  An example of the portable information terminal 800 is shown in FIGS. The portable information terminal 800 includes a housing 801, a housing 802, a display portion 803, a display portion 804, a hinge portion 805, and the like.

  The housing 801 and the housing 802 are connected by a hinge portion 805. The portable information terminal 800 can open the housing 801 and the housing 802 as illustrated in FIG. 21B from the folded state as illustrated in FIG.

  For example, document information can be displayed on the display portion 803 and the display portion 804 and can be used as an electronic book terminal. In addition, still images and moving images can be displayed on the display portion 803 and the display portion 804.

  Thus, since the portable information terminal 800 can be folded when being carried, it is excellent in versatility.

  Note that the housing 801 and the housing 802 may include a power button, an operation button, an external connection port, a speaker, a microphone, and the like.

  FIG. 21C illustrates an example of a portable information terminal. A portable information terminal 810 illustrated in FIG. 21C includes a housing 811, a display portion 812, operation buttons 813, an external connection port 814, a speaker 815, a microphone 816, a camera 817, and the like.

  The display portion 812 includes the display device of one embodiment of the present invention.

  The portable information terminal 810 includes a touch sensor in the display unit 812. Any operation such as making a call or inputting characters can be performed by touching the display portion 812 with a finger or a stylus.

  Further, the operation of the operation button 813 can switch the power ON / OFF operation and the type of image displayed on the display unit 812. For example, the mail creation screen can be switched to the main menu screen.

  Further, by providing a detection device such as a gyro sensor or an acceleration sensor inside the portable information terminal 810, the orientation (portrait or landscape) of the portable information terminal 810 is determined, and the screen display orientation of the display unit 812 is changed. It can be switched automatically. In addition, the screen display orientation can be switched by touching the display portion 812, operating the operation button 813, or inputting voice using the microphone 816.

  The portable information terminal 810 has one or more functions selected from, for example, a telephone, a notebook, an information browsing device, or the like. Specifically, it can be used as a smartphone. The portable information terminal 810 can execute various applications such as mobile phone, electronic mail, text browsing and creation, music playback, video playback, Internet communication, and games.

  FIG. 21D illustrates an example of a camera. The camera 820 includes a housing 821, a display portion 822, operation buttons 823, a shutter button 824, and the like. A removable lens 826 is attached to the camera 820.

  The display portion 822 includes the display device of one embodiment of the present invention.

  Here, the camera 820 is configured such that the lens 826 can be removed from the housing 821 and replaced, but the lens 826 and the housing may be integrated.

  The camera 820 can capture a still image or a moving image by pressing the shutter button 824. In addition, the display portion 822 has a function as a touch panel and can capture an image by touching the display portion 822.

  The camera 820 can be separately attached with a strobe device, a viewfinder, and the like. Alternatively, these may be incorporated in the housing 821.

  This embodiment can be implemented in appropriate combination with at least part of the other embodiments described in this specification.

DESCRIPTION OF SYMBOLS 10 Display apparatus 11a 1st area | region 11b 2nd area | region 12a Light receiving part 12b Light receiving part 13a Light collecting part 13b Light collecting part 14a Light emitting part 14b Light emitting part 15a Light reflecting layer 15b Light reflecting layer 20 Light emitting part 20a Light 20b Light 20c light 21 substrate 23a conductive layer 23b conductive layer 24 liquid crystal 25 conductive layer 26a alignment film 26b alignment film 30 light reflecting portion 30a light 31 substrate 32 display portion 34 circuit portion 35 wiring 36 FPC
37 IC
40 Liquid crystal element 43a Release layer 43b Release layer 44a Support substrate 44b Support substrate 44c Support substrate 45 Insulating layer 46a Adhesive layer 54 Colored layer 54a Colored layer 60 Light emitting element 61 Conductive layer 62 EL layer 63 Conductive layer 64 Insulating layer 70 Transistor 70a Transistor 70b Transistor 71 Conductive layer 72 Semiconductor layer 73a Conductive layer 73b Conductive layer 74 Conductive layer 80 Connection portion 81 Insulating layer 82 Insulating layer 83 Insulating layer 84 Insulating layer 85 Insulating layer 86 Insulating layer 87 Insulating layer 89 Adhesive layer 91 Insulating layer 92 Insulating layer 93 Insulating layer 94 Insulating layer 95 Insulating layer 96 Insulating layer 97 Insulating layer 98 Insulating layer 99 Adhesive layer 110 Transistor 110a Transistor 110b Transistor 110c Transistor 110d Transistor 111 Conductive layer 112 Semiconductor layer 112a Semiconductor layer 113a Conductive layer 113b Conductive layer 1 3c conductive layer 113d conductive layer 114 conductive layer 114a conductive layer 114b conductive layer 115 conductive layer 120 light emitting element 121 conductive layer 131 insulating layer 132 insulating layer 133 insulating layer 134 insulating layer 135 insulating layer 136 insulating layer 137 insulating layer 311 conductive layer 311b conductive Layer 340 Liquid crystal element 360 Light emitting element 360b Light emitting element 360g Light emitting element 360r Light emitting element 360w Light emitting element 362 Display unit 400 Display device 410 Pixel 451 Opening 800 Portable information terminal 801 Housing 802 Housing 803 Display unit 804 Display unit 805 Hinge unit 810 Mobile Information terminal 811 Case 812 Display unit 813 Operation button 814 External connection port 815 Speaker 816 Microphone 817 Camera 820 Camera 821 Case 822 Display unit 823 Operation button 824 Shutter button 826 Lens 6000 Display module 6001 top cover 6002 bottom cover 6005 FPC
6006 Display panel 6009 Frame 6010 Printed circuit board 6011 Battery 6015 Light emitting unit 6016 Light receiving unit 6017a Light guiding unit 6017b Light guiding unit 6018 Light

Claims (10)

A light emitting element, a first region, and a second region;
The light emitting element, the first region, and the second region have portions that overlap each other,
The light emitting element has a function of emitting light,
The first region has a first part, a second part, and a third part;
The first part is a part on which the light is incident,
The second part is a part that reflects a part of the light and supplies it to the third part,
The third part is a part from which the light is emitted,
The second region has a fourth portion, a fifth portion, and a sixth portion;
The fourth part is a part where the light emitted from the third part is incident,
The fifth part is a part that reflects a part of the light and supplies it to the sixth part,
The sixth part is a part from which the light is emitted,
The first portion is smaller than the area of the third portion;
The fourth portion is smaller than the area of the sixth portion;
Display device. In claim 1,
The light-emitting element includes a first electrode, a layer containing a light-emitting substance, and a second electrode,
The first electrode has a function of transmitting visible light, and is located between the second electrode and the first region,
The second electrode has a function of reflecting visible light.
Display device. In claim 1 or claim 2,
A first transistor and a first insulating layer covering the first transistor;
The first transistor is electrically connected to the light emitting element,
The first insulating layer has a first opening;
The first region is located inside the first opening;
Display device. In any one of Claim 1 thru | or 3,
Having a liquid crystal element,
The liquid crystal element includes a third electrode, a fourth electrode, and a liquid crystal between the third electrode and the fourth electrode,
The third electrode has a function of reflecting visible light, and has a second opening between the fourth electrode and the second region,
The light emitted from the sixth portion is emitted through the second opening;
Display device. In claim 4,
A second transistor and a second insulating layer covering the second transistor;
The second transistor is electrically connected to the liquid crystal element;
The second insulating layer has a third opening;
The second region is located inside the third opening;
Display device. In any one of Claims 1 thru | or 5,
Having an adhesive layer between the first region and the second region;
Display device. In any one of Claims 1 thru | or 6,
The second portion includes a first light reflecting layer that reflects visible light and has a cylindrical shape, and a first resin layer inside the first light reflecting layer,
The inner surface of the first light reflecting layer has a convex curved surface whose diameter continuously increases from the first part side to the third part side.
Display device. In any one of Claims 1 thru | or 7,
The fifth portion has a second light reflecting layer that reflects visible light and has a cylindrical shape, and a second resin layer inside the second light reflecting layer,
The inner surface of the second light reflecting layer has a convex curved surface whose diameter continuously increases from the fourth part side to the sixth part side.
Display device. In any one of Claims 1 thru | or 8,
Having a colored layer,
The colored layer is located between the first region and the second region;
Display device. In any one of Claims 1 thru | or 8,
Having a colored layer,
The colored layer is located between the first portion and the third portion, or between the fourth portion and the sixth portion.
Display device.

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